Substrate processing apparatus and substrate processing method

Abstract

To provide a substrate processing apparatus and a substrate processing method that make it possible to appropriately remove, from a substrate, a residual liquid remaining on the substrate after a pattern is formed thereon.SOLUTION: A rinsing liquid remaining on a substrate W after rinsing processing is replaced with a replacement liquid having a surface tension lower than that of the rinsing liquid. During this replacement, a nozzle device 100 is disposed at a nozzle upper position above processing cups 30A and 30B. The nozzle device 100 is moved horizontally from the center of the substrate to an outer peripheral edge portion of the substrate while the replacement liquid is discharged downward from the nozzle device 100. Thereafter, the substrate W is dried. During this drying, the nozzle device 100 is moved downward from the nozzle upper position above the center of the substrate W to a nozzle lower position close to the substrate W while gas is jetted downward from the nozzle device 100. The nozzle device 100 is moved horizontally from the center of the substrate to the outer peripheral edge portion of the substrate while the gas jetting is continued.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method for performing a predetermined process on a substrate. [Background technology]

[0002] Substrate processing apparatuses are used to perform various processes on substrates such as semiconductor substrates, substrates for FPDs (Flat Panel Displays) such as liquid crystal display devices or organic EL (Electro Luminescence) display devices, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, and substrates for solar cells.

[0003] In the manufacturing process of semiconductor devices, for example, a photosensitive resist pattern is formed on a substrate using photolithography. By supplying a chemical solution onto the substrate on which the photosensitive resist has been formed (chemical solution treatment), various patterns such as wiring circuits are formed on the substrate.

[0004] A rinse process is performed to stop the progress of the chemical process and remove the chemical solution remaining on the substrate after pattern formation. In the rinse process, a rinse liquid is supplied onto the substrate after the chemical process. As a result, the chemical solution on the substrate is replaced with the rinse liquid. Then, a drying process is performed to remove the rinse liquid remaining on the substrate.

[0005] Various methods have been proposed to improve the cleanliness of the substrate after drying processing. For example, there is a method of supplying IPA (isopropyl alcohol) vapor onto the rotating substrate after rinsing processing in order to suppress the generation of watermarks and the remaining particles on the substrate (see, for example, Patent Document 1).

[0006] The surface tension of IPA is lower than that of pure water. Therefore, when IPA is used for drying a substrate as described above, damage to the pattern (such as collapse of the pattern) caused by IPA entering between the patterns is reduced. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] JP 2016-167582 A Summary of the Invention [Problem to be solved by the invention]

[0008] In order to further increase the cleanliness of the substrate after drying processing and further improve the reliability of various patterns formed on the substrate after drying processing, it is desirable to properly remove any residual liquid remaining on the substrate after pattern formation.

[0009] An object of the present invention is to provide a substrate processing apparatus and a substrate processing method that enable a residual liquid remaining on a substrate after a pattern is formed thereon to be appropriately removed from the substrate. [Means for solving the problem]

[0010] A substrate processing apparatus according to one aspect of the present invention is a substrate processing apparatus that removes residual liquid remaining on a substrate after a pattern is formed on the substrate, the substrate processing apparatus comprising: a substrate holding unit that holds the substrate and rotates the substrate about a vertical axis; a nozzle device having a liquid ejection unit, a first gas ejection unit and a second gas ejection unit; a fluid supply system that supplies a processing liquid having a surface tension lower than that of the residual liquid, a first gas and a second gas to the nozzle device; and a nozzle device in one attitude that is positioned at an upper position a predetermined distance above the substrate held by the substrate holding unit, and at a lower position below the upper position and below the substrate. the nozzle device in the one position is configured to move relatively to the substrate between a lower position above a lower position and a lower position above a substrate, and to move the nozzle device in the one position relatively in a horizontal direction to the substrate, and a control unit, wherein the liquid discharge unit is configured to discharge the processing liquid supplied from the fluid supply system downward when the nozzle device is in the one position, the first gas jet unit is configured to jet the first gas supplied from the fluid supply system downward when the nozzle device is in the one position, and the second gas jet unit is configured to jet the first gas supplied from the fluid supply system downward when the nozzle device is in the one position. and the control unit controls the substrate holding unit so as to rotate the substrate held by the substrate holding unit, and performs liquid replacement control to control the fluid supply system and the relative movement device so that the processing liquid is discharged from the liquid discharge unit of the nozzle device onto the substrate in a state where the substrate holding unit is in the one attitude and is disposed in a space above the substrate held by the substrate holding unit. a first gas replacement control is performed to control the relative movement device so that, with the processing liquid being present on the substrate after the liquid replacement control, the nozzle device is located at the upper position and the first gas jetting unit faces a center of the substrate; after the first gas replacement control, a second gas replacement control is performed to control the fluid supply system and the relative movement device so that the nozzle device descends from the upper position to the lower position while the first gas and the second gas are jetted from the first gas jetting unit and the second gas jetting unit, respectively; and after the second gas replacement control,A third gas replacement control is performed to control the fluid supply system and the relative movement device so that the nozzle device in the lower position moves from the center of the substrate toward the outer circumferential edge while the first gas and the second gas are respectively injected from the first gas injection unit and the second gas injection unit.

[0011] A substrate processing apparatus according to another aspect of the present invention is a substrate processing apparatus that removes residual liquid remaining on a substrate after a pattern is formed thereon, the substrate processing apparatus comprising: a substrate holding unit that holds the substrate and rotates the substrate about a vertical axis; a nozzle device having a liquid ejection unit, a first gas ejection unit and a second gas ejection unit; a fluid supply system that supplies a processing liquid having a surface tension lower than that of the residual liquid, a first gas and a second gas to the nozzle device; and a nozzle device that is in one orientation and is positioned at an upper position that is a predetermined distance above the substrate held by the substrate holding unit, and a lower position that is below the upper position and above the a relative movement device which moves the nozzle device in the one position relative to the substrate between a lower position above the substrate and a lower position above the substrate, and which moves the nozzle device in the one position relative to the substrate in a horizontal direction, and a control unit, wherein the liquid discharge unit is configured to discharge the processing liquid supplied from the fluid supply system downward when the nozzle device is in the one position, the first gas jet unit is configured to jet the first gas supplied from the fluid supply system downward when the nozzle device is in the one position, and the second gas jet unit is configured to jet the first gas supplied from the fluid supply system downward when the nozzle device is in the one position. a first liquid ejection unit configured to eject the second gas supplied from the fluid supply system radially toward an outer circumferential edge of the substrate in a plan view when the nozzle device is in the one orientation and disposed in a space above the substrate held by the substrate holding unit, and the control unit controls the substrate holding unit so that the substrate held by the substrate holding unit rotates, and controls the relative movement device so that the nozzle device is located at the upper position and the liquid ejection unit faces the center of the substrate when there is residual liquid on the substrate held by the substrate holding unit. a replacement control is performed, and after the first liquid replacement control, a second liquid replacement control is performed to control the fluid supply system and the relative movement device so that the nozzle device at the upper position moves from the center of the substrate toward the outer circumferential edge while the processing liquid is being discharged from the liquid discharge unit, and after the second liquid replacement control, the first gas is sprayed from the first gas spraying unit of the nozzle device onto the substrate while the second gas is sprayed from the second gas spraying unit of the nozzle device with the processing liquid being on the substrate held by the substrate holding unit;A gas replacement control is performed to control the fluid supply system and the relative movement device.

[0012] A substrate processing method according to yet another aspect of the present invention is a method for removing a residual liquid remaining on a substrate after a pattern is formed thereon by using a nozzle device, the nozzle device having a liquid discharge section, a first gas jetting section and a second gas jetting section, the liquid discharge section being configured to discharge a processing liquid supplied to the nozzle device downward when the nozzle device is in one position, the first gas jetting section being configured to jet a first gas supplied to the nozzle device downward when the nozzle device is in the one position, the second gas ejection unit is formed to eject a second gas supplied to the nozzle device radially toward an outer peripheral edge of the substrate in a plan view when the nozzle device is in the one orientation and is disposed in a space above the substrate held by a substrate holding unit, the processing liquid having a lower surface tension than the residual liquid, and the substrate processing method includes a step of rotating the held substrate around an axis in a vertical direction while holding the substrate by the substrate holding unit, and a step of rotating the held substrate around an axis in a vertical direction while the residual liquid is on the substrate held by the substrate holding unit. a liquid replacement step of disposing the nozzle device above the substrate and supplying the processing liquid to the nozzle device to cause the processing liquid to be discharged onto the substrate from the liquid discharge unit; a first gas replacement step of disposing the nozzle device at an upper position a predetermined distance above the substrate so that the first gas jetting unit faces the center of the substrate while the processing liquid is on the substrate after the liquid replacement step; and a second gas replacement step of disposing the nozzle device at an upper position a predetermined distance above the substrate so that the first gas jetting unit faces the center of the substrate while the processing liquid is on the substrate after the first gas replacement step. a second gas replacement step of lowering the nozzle device to a lower position below the upper position and above the substrate while jetting the first gas and the second gas from the first gas injection unit and the second gas injection unit, respectively; and a third gas replacement step of moving the nozzle device at the lower position from the center of the substrate toward the outer circumferential edge thereof after the second gas replacement step, while jetting the first gas and the second gas from the first gas injection unit and the second gas injection unit, respectively, by supplying the first gas and the second gas to the nozzle device.

[0013] A substrate processing method according to still another aspect of the present invention is a substrate processing method for removing residual liquid remaining on a substrate after pattern formation from the substrate by using a nozzle device, the nozzle device having a liquid discharge section, a first gas jetting section and a second gas jetting section, the liquid discharge section being configured to discharge a processing liquid supplied to the nozzle device downwardly when the nozzle device is in one position, the first gas jetting section being configured to jet a first gas supplied to the nozzle device downwardly when the nozzle device is in the one position, and the second gas jetting section being configured to jet a second gas supplied to the nozzle device radially toward an outer circumferential edge of the substrate in a plan view when the nozzle device is in the one position and is disposed in a space above the substrate held by a substrate holding section, the processing liquid having a surface tension lower than that of the residual liquid, and the substrate processing method further comprises removing a processing liquid from a substrate held by the substrate holding section while the substrate is held by the substrate holding section. the nozzle device in the upper position from the center of the substrate toward the outer periphery while discharging the processing liquid from the liquid discharge portion by supplying the processing liquid to the nozzle device; and a gas replacement step of disposing the nozzle device above the substrate in the upper position from the center of the substrate toward the outer periphery while discharging the processing liquid from the liquid discharge portion by supplying the second gas to the nozzle device, and spraying the first gas onto the substrate from the first gas jetting portion by supplying the first gas to the nozzle device while disposing the nozzle device above the substrate in the upper position and discharging the processing liquid from the liquid discharge portion by supplying the second gas to the nozzle device. Effect of the Invention

[0014] According to the present invention, it becomes possible to appropriately remove from a substrate a processing liquid remaining on the substrate after a pattern has been formed thereon. [Brief description of the drawings]

[0015] [Figure 1] 1 is a schematic side view of a substrate processing apparatus according to an embodiment of the present invention; [Diagram 2] 2 is a schematic plan view showing an internal configuration of the substrate processing apparatus of FIG. [Diagram 3] FIG. 2 is a schematic external perspective view of the nozzle device of FIG. 1; [Figure 4] FIG. 2 is a schematic plan view of the nozzle device of FIG. 1; [Diagram 5] 5 is a vertical sectional view of the nozzle device of FIG. 4 taken along line QQ. [Figure 6] 2 is a block diagram showing a configuration of a control system of the substrate processing apparatus of FIG. 1. [Figure 7] 2 is a time chart for explaining an example of the operation of each component when a series of processes is performed on a substrate using the substrate processing apparatus of FIG. [Figure 8] 8 is a schematic side view showing the operation of each component of the substrate processing apparatus according to the time chart of FIG. 7. [Figure 9] 8 is a schematic side view showing the operation of each component of the substrate processing apparatus according to the time chart of FIG. 7. [Figure 10] 8 is a schematic side view showing the operation of each component of the substrate processing apparatus according to the time chart of FIG. 7. [Figure 11] 8 is a schematic side view showing the operation of each component of the substrate processing apparatus according to the time chart of FIG. 7. [Figure 12] 8 is a schematic side view showing the operation of each component of the substrate processing apparatus according to the time chart of FIG. 7. [Figure 13] 8 is a schematic side view showing the operation of each component of the substrate processing apparatus according to the time chart of FIG. 7. [Figure 14] 8 is a schematic side view showing the operation of each component of the substrate processing apparatus according to the time chart of FIG. 7. [Figure 15] 8 is a schematic side view showing the operation of each component of the substrate processing apparatus according to the time chart of FIG. 7. [Figure 16]8 is a schematic side view showing the operation of each component of the substrate processing apparatus according to the time chart of FIG. 7. [Figure 17] 8 is a schematic side view showing the operation of each component of the substrate processing apparatus according to the time chart of FIG. 7. [Figure 18] 8 is a schematic side view showing the operation of each component of the substrate processing apparatus according to the time chart of FIG. 7. [Figure 19] FIG. 11 is a schematic side view of a substrate processing apparatus according to another embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0016] Hereinafter, a substrate processing apparatus and a substrate processing method according to an embodiment of the present invention will be described with reference to the drawings. In the following description, the substrate refers to a substrate for FPD (Flat Panel Display) used in a liquid crystal display device or an organic EL (Electro Luminescence) display device, a semiconductor substrate, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, a ceramic substrate, or a substrate for a solar cell. The upper surface of the substrate refers to a surface of the substrate facing upward, and the lower surface of the substrate refers to a surface of the substrate facing downward. The upper surface of the substrate may be a surface on which a circuit is formed (front surface) or a surface opposite to the surface on which a circuit is formed (rear surface). The substrate has a circular shape in a plan view excluding a notch.

[0017] Furthermore, the substrate processing apparatus described below performs chemical processing, rinsing processing, and drying processing on a substrate to be processed. In this embodiment, the chemical processing is a processing for forming a structure of a predetermined pattern on the upper surface of the substrate by supplying a chemical liquid to the upper surface of the substrate. Moreover, the rinsing processing is a processing for washing away the chemical liquid from the upper surface of the substrate by supplying a rinsing liquid to the upper surface of the substrate after the chemical processing. Furthermore, the drying processing is a processing for replacing the rinsing liquid remaining on the substrate with the processing liquid by supplying a processing liquid having a surface tension lower than that of the rinsing liquid to the upper surface of the substrate after the rinsing processing, and then drying the substrate. In the following description, the processing liquid used in the drying processing, i.e., the processing liquid having a surface tension lower than that of the rinsing liquid, is called a replacement liquid.

[0018] 1. Overview of the configuration of the substrate processing equipment FIG 1 is a schematic side view of a substrate processing apparatus according to an embodiment of the present invention. FIG 2 is a schematic plan view showing an internal configuration of the substrate processing apparatus 1 of FIG 1. FIG 2 shows only some of the components of the substrate processing apparatus 1 of FIG 1. As shown in FIG 1, the substrate processing apparatus 1 includes a substrate holding device 20, a cup device 30, a drainage device 39, a chemical liquid supply device 40, a rinse liquid supply system 50, and a replacement liquid supply system 60. The substrate processing apparatus 1 also includes a first gas supply system 70, a second gas supply system 80, a third gas supply system 90, a nozzle device 100, a nozzle movement device 150, and a control unit 200.

[0019] Furthermore, the substrate processing apparatus 1 includes a chamber CH that houses the above-mentioned components. The chamber CH has four side surfaces, a ceiling, and a bottom. A transfer opening (not shown) is formed in one side surface of the chamber CH for transferring a substrate between the inside of the chamber CH and the outside of the chamber CH. In addition, an FFU (filter fan unit) 10 is provided in the ceiling of the chamber CH. The FFU 10 generates a downward air current of clean air in the chamber CH.

[0020] A substrate holding device 20 is provided in approximately the center of the bottom of the chamber CH. The substrate holding device 20 includes a substrate holding part 21 and a rotation drive part 22. The rotation drive part 22 is, for example, a motor, and is fixed to the bottom of the chamber CH. The rotation drive part 22 has a rotation shaft that extends upward. The substrate holding part 21 is connected to the upper end of the rotation shaft.

[0021] The substrate holding unit 21 is a so-called mechanical chuck type spin chuck that holds the outer peripheral edge of the substrate W. Specifically, the substrate holding unit 21 includes a disk-shaped spin base 21a and a plurality of rotary holding pins 21b provided on the upper peripheral edge of the spin base 21a. In the substrate holding unit 21, the lower peripheral edge and the outer peripheral edge of the substrate W placed on the spin base 21a are held by the plurality of holding pins 21b. In this state, the rotation drive unit 22 operates to rotate the substrate W in a horizontal position. In Figs. 1 and 2, the substrate W held by the substrate holding device 20 is indicated by a dashed line.

[0022] The above-mentioned chemical treatment, rinsing treatment, and drying treatment are performed by supplying various treatment liquids to the upper surface of the substrate W held and rotated by the substrate holding device 20. A cup device 30 and a drainage device 39 are used to discard the treatment liquids that splash from the rotating substrate W during each treatment.

[0023] The cup device 30 includes an outer cup 30A, an inner cup 30B, and a cup drive unit 31. Each of the outer cup 30A and the inner cup 30B has a substantially cylindrical shape, and is provided so as to surround the substrate holding unit 21 in a plan view (FIG. 2) and extend in the vertical direction. The inner diameter of the outer cup 30A is larger than the outer diameter of the inner cup 30B. As a result, the inner cup 30B is disposed inside the outer cup 30A. Furthermore, each of the outer cup 30A and the inner cup 30B is provided so as to be movable in the vertical direction.

[0024] The cup driving unit 31 includes an actuator such as a motor or an air cylinder. The cup driving unit 31 moves each of the outer cup 30A and the inner cup 30B between a predetermined cup upper position and a cup lower position in accordance with the processing performed on the substrate W.

[0025] The cup up position of each of the cups 30A, 30B is a height position (vertical position) where the upper end of the cup is above the substrate W held by the substrate holding part 21. As a result, each cup receives processing liquid splashed from the substrate W while in the cup up position. On the other hand, the cup down position of each of the cups 30A, 30B is a height position where the upper end of the cup is below the substrate W held by the substrate holding part 21. In this embodiment, the cup up position of the outer cup 30A is the same as the cup up position of the inner cup 30B. Also, the cup down position of the outer cup 30A is the same as the cup down position of the inner cup 30B.

[0026] The drainage device 39 includes an outer container 39A and an inner container 39B corresponding to the outer cup 30A and the inner cup 30B, respectively. The outer container 39A and the inner container 39B each have an annular groove that opens upward, and guides the processing liquid received by the corresponding cup to a waste facility within the factory.

[0027] A chemical nozzle 41 is provided in the chamber CH. The chemical supply device 40 includes a chemical supply system and a chemical nozzle moving device, not shown. The chemical nozzle 41 is supported by the chemical nozzle moving device. The chemical nozzle moving device moves the chemical nozzle 41 between a processing position above a center WC (FIG. 2) of the substrate W held by the substrate holding part 21 and a standby position to the side of the substrate W, during chemical processing of the substrate W. The chemical supply system of the chemical supply device 40 supplies the chemical to the chemical nozzle 41 at the processing position, during chemical processing of the substrate W. As a result, the chemical is supplied to the upper surface of the substrate W held and rotated by the substrate holding part 21.

[0028] The chemical liquids that can be used include hydrofluoric acid (HF), a mixture of sulfuric acid and hydrogen peroxide (SPM), a mixture of ammonia water and hydrogen peroxide (SC1), a mixture of hydrochloric acid and hydrogen peroxide (SC2), dilute hydrofluoric acid (DHF), organic alkali (e.g., tetramethylammonium hydroxide (TMAH)), or buffered hydrofluoric acid (BHF).

[0029] A rinsing liquid nozzle 51 is further provided in the chamber CH at a predetermined position above the substrate holding device 20 and the cup device 30. The rinsing liquid nozzle 51 is fixed such that its outlet faces the center WC of the substrate W held by the substrate holding part 21. The rinsing liquid supply system 50 supplies rinsing liquid to the rinsing liquid nozzle 51 during rinsing processing of the substrate W. As a result, the rinsing liquid is supplied to the upper surface of the substrate W held and rotated by the substrate holding part 21.

[0030] Examples of rinsing liquids that can be used include pure water (deionized water), carbonated water, ozone water, magnetic water, ultra-diluted ammonia water (1 ppm or more and 100 ppm or less), ultra-diluted hydrochloric acid water (1 ppm or more and 100 ppm or less), reduced water (hydrogen water), and ionized water.

[0031] The nozzle device 100 is supported by a nozzle moving device 150 in the chamber CH. As shown in FIG. 2, the nozzle moving device 150 includes a base 153, a support shaft 154, and an arm 155. The base 153 is fixed to the bottom of the chamber CH so as to be located outside the outer cup 30A in a plan view. The support shaft 154 is provided so as to extend a certain distance upward from the base 153. An arm 155 extending in the horizontal direction is attached to the upper end of the support shaft 154. The nozzle device 100 is attached to the tip of the arm 155.

[0032] 1, the nozzle moving device 150 further includes a horizontal driving device 151 and a vertical driving device 152. Each of the horizontal driving device 151 and the vertical driving device 152 is built into, for example, a base portion 153 in FIG. 2, and includes an actuator such as a motor or an air cylinder.

[0033] The horizontal driving device 151 rotates the support shaft 154 around its own axis. In this case, during drying processing of the substrate W, the horizontal driving device 151 moves the nozzle device 100 in an arc shape in a plan view between a space above the substrate W held by the substrate holding part 21 and a standby position to the side of the substrate W (see the thick solid arrow in FIG. 2).

[0034] Furthermore, the vertical driving device 152 moves the support shaft 154 in the vertical direction. As a result, the horizontal driving device 151 moves the nozzle device 100 between a nozzle upper position and a nozzle lower position in the space above the substrate W held by the substrate holding part 21 during drying processing of the substrate W.

[0035] In the following description, the height position of the nozzle device 100 refers to the height position of the lower end of the nozzle device 100. The nozzle upper position is a height position higher than the cup upper positions of the cups 30A, 30B and a height position a predetermined distance (e.g., about 30 mm) higher than the substrate W held by the substrate holding unit 21. The nozzle lower position is a height position lower than the nozzle upper position and a height position higher than the substrate W held by the substrate holding unit 21.

[0036] The replacement liquid supply system 60, the first gas supply system 70, the second gas supply system 80 and the third gas supply system 90 supply a replacement liquid, a first gas, a second gas and a third gas, respectively, to the nozzle device 100 during drying processing of the substrate W.

[0037] As described above, the replacement liquid is a processing liquid having a surface tension lower than that of the rinse liquid used in the rinse process immediately before the drying process. An organic solvent is used as such a processing liquid. In this embodiment, IPA (isopropyl alcohol) is used as the replacement liquid. Note that, instead of IPA, other organic solvents such as HFE (hydrofluoroether), methanol, ethanol, or acetone can also be used as the replacement liquid. Furthermore, the replacement liquid may be a mixture of an organic solvent and pure water.

[0038] In this embodiment, the first gas, the second gas, and the third gas are nitrogen gas. Note that the first gas, the second gas, and the third gas may be inert gas, and argon gas, helium gas, or the like may be used instead of nitrogen gas. Furthermore, the first gas, the second gas, and the third gas may be the same type of inert gas, or at least one gas may be a different type of inert gas from the other gases.

[0039] 2. Configuration of the nozzle device 100 The configuration of the nozzle device 100 will now be described. Fig. 3 is a schematic external perspective view of the nozzle device 100 of Fig. 1, Fig. 4 is a schematic plan view of the nozzle device 100 of Fig. 1, and Fig. 5 is a vertical sectional view of the nozzle device 100 of Fig. 4 taken along line QQ.

[0040] 3, the nozzle device 100 includes a nozzle body 101 having a substantially cylindrical shape. In the substrate processing apparatus 1, the nozzle device 100 is supported by a nozzle moving device 150 in one position in which the axis (central axis) of the nozzle body 101 extends in the vertical direction.

[0041] The nozzle body 101 has an upper surface 110, a lower surface 120, and an outer peripheral surface 130. The upper surface 110 has a circular shape and faces upward when the nozzle device 100 is in one position. The lower surface 120 has a circular shape and faces downward when the nozzle device 100 is in one position. The center of the lower surface 120 is recessed in a mortar shape. The outer peripheral surface 130 is a cylindrical surface that connects the outer edge of the upper surface 110 and the outer edge of the lower surface 120.

[0042] Two through holes 102, 103 are formed in the nozzle body 101 so as to extend vertically along the axis of the nozzle body 101 and to be close to each other. A replacement liquid pipe 61 constituting a part of the replacement liquid supply system 60 in Fig. 1 is inserted into one of the through holes 102. A first gas pipe 71 constituting a part of the first gas supply system 70 in Fig. 1 is inserted into the other through hole 103.

[0043] As shown in FIG. 5, when the replacement liquid pipe 61 is inserted into the through hole 102, the tip of the replacement liquid pipe 61 is located at the lower end of the nozzle device 100 and functions as a replacement liquid outlet 62 that discharges the replacement liquid downward. On the other hand, when the first gas pipe 71 is inserted into the through hole 103, the tip of the first gas pipe 71 is located at the lower end of the nozzle device 100 and functions as a first gas outlet 72 that sprays the first gas downward. In FIG. 3 and FIG. 5, the flow of the replacement liquid discharged from the nozzle device 100 through the replacement liquid pipe 61 is indicated by a thick solid arrow. Also, the flow of the first gas sprayed from the nozzle device 100 through the first gas pipe 71 is indicated by a thick dotted arrow.

[0044] 3, a second gas ejection port 131 and a third gas ejection port 132 extending in the circumferential direction are formed in an annular shape around the entire circumference of the outer circumferential surface 130 near the lower end of the outer circumferential surface 130 of the nozzle body 101. The third gas ejection port 132 is located above the second gas ejection port 131 and close to the second gas ejection port 131.

[0045] A second gas pipe 81 constituting part of the second gas supply system 80 of FIG. 1 is connected to the outer peripheral surface of the nozzle main body 101, and a third gas pipe 91 constituting part of the third gas supply system 90 of FIG. 1 is connected to the outer peripheral surface of the nozzle main body 101.

[0046] 5, a gas flow path 141 is formed inside the nozzle body 101, which guides the second gas supplied from the second gas pipe 81 to the second gas jetting port 131. In addition, a gas flow path 142 is formed inside the nozzle body 101, which guides the third gas supplied from the third gas pipe 91 to the third gas jetting port 132.

[0047] 3 to 5, the second gas is injected from the second gas injection port 131 through the second gas pipe 81 and the gas flow path 141. The flow of the second gas injected from the second gas injection port 131 spreads radially in a direction perpendicular to the axis of the nozzle body 101.

[0048] 3 to 5, the third gas is injected from the third gas injection port 132 through the third gas pipe 91 and the gas flow path 142. The flow of the third gas injected from the third gas injection port 132 spreads radially in a direction perpendicular to the axis of the nozzle body 101, similar to the flow of the second gas.

[0049] 3. Control system of substrate processing apparatus 1 The control system of the substrate processing apparatus 1 will be described together with the configuration of the control unit 200 in Fig. 1. Fig. 6 is a block diagram showing the configuration of the control system of the substrate processing apparatus 1 in Fig. 1. As shown in Fig. 6, the control unit 200 includes a CPU (Central Processing Unit) 201, a RAM (Random Access Memory) 202, a ROM (Read Only Memory) 203, and a storage device 204. The RAM 202 is used as a working area for the CPU 201. A system program is stored in the ROM 203. The storage device 204 includes a storage medium such as a hard disk or a semiconductor memory, and stores a substrate cleaning program for performing the above-mentioned series of processes (chemical liquid process, rinsing process, and drying process) on the substrate W.

[0050] The substrate cleaning program may be provided in a state stored in a recording medium such as CD-ROM 209, and may be installed in ROM 203 or storage device 204. Alternatively, the substrate cleaning program may be distributed from a server external to substrate processing apparatus 1 via a communication network, and may be installed in ROM 203 or storage device 204.

[0051] The CPU 201 executes the substrate cleaning program to control the operation of each part of the substrate processing apparatus 1. Specifically, the control unit 200 controls the substrate holding device 20. As a result, the control unit 200 causes the substrate holding device 20 to hold the substrate W that is carried into the substrate processing apparatus 1. The control unit 200 also causes the substrate holding device 20 to release the substrate W from its holding state in order to carry the substrate W out of the substrate processing apparatus 1. Furthermore, the control unit 200 rotates the substrate W held by the substrate holding device 20 at a preset speed.

[0052] The control unit 200 also controls the cup device 30. As a result, the control unit 200 moves each of the outer cup 30A and the inner cup 30B in Fig. 1 between a cup upper position and a cup lower position.

[0053] The control unit 200 also controls the chemical liquid supplying device 40. As a result, during chemical processing, the control unit 200 moves the chemical liquid nozzle 41 within the chamber CH and supplies the chemical liquid to the chemical liquid nozzle 41. The control unit 200 also controls the rinsing liquid supply system 50. As a result, during rinsing processing, the control unit 200 supplies the rinsing liquid to the rinsing liquid nozzle 51.

[0054] Furthermore, the control unit 200 controls the replacement liquid supply system 60. As a result, the control unit 200 supplies the replacement liquid to the nozzle device 100 when replacing the rinsing liquid on the substrate W with the replacement liquid during the drying process.

[0055] Moreover, the control unit 200 controls the first gas supply system 70, the second gas supply system 80, and the third gas supply system 90. Thereby, the control unit 200 supplies a first gas to the nozzle device 100 when removing the replacement liquid on the substrate W during the drying process. Moreover, the control unit 200 supplies a second gas and a third gas to the nozzle device 100 during the drying process.

[0056] Furthermore, the control unit 200 controls the horizontal direction drive unit 151 and the vertical direction drive unit 152 of the nozzle moving device 150. In this way, the control unit 200 moves the nozzle device 100 within the chamber CH during the drying process.

[0057] 4. Operation of the Substrate Processing Apparatus 1 A specific example of the operation of the substrate processing apparatus 1 when a series of processes is performed on a substrate W by CPU 201 in Fig. 6 executing a substrate cleaning program will be described. Fig. 7 is a time chart for explaining an example of the operation of each component when a series of processes is performed on a substrate using the substrate processing apparatus 1 in Fig. 1. Figs. 8 to 18 are schematic side views showing the operation of each component of the substrate processing apparatus 1 according to the time chart in Fig. 7. The diameter of the substrate W to be processed in this example is assumed to be 300 mm.

[0058] 7 shows ten items to be controlled in the operation of the substrate processing apparatus 1. The ten items are "chemical liquid," "rinsing liquid," "height position of the nozzle," "horizontal position of the nozzle," "replacement liquid," "first gas," "second and third gases," "height position of the outer cup," "height position of the inner cup," and "rotation speed of the substrate," and are arranged vertically in this order from the top row (first row) to the bottom row (tenth row).

[0059] To the right of the above 10 items, the control contents corresponding to those items are shown in chronological order using a common time axis. To the right of the item "Chemical Liquid" in the first row, it is shown whether or not the chemical liquid is supplied from the chemical liquid supply device 40 to the chemical liquid nozzle 41 (supply or stop). To the right of the item "Rinse liquid" in the second row, it is shown whether or not the rinse liquid is supplied from the rinse liquid supply system 50 to the rinse liquid nozzle 51 (supply or stop).

[0060] To the right of the item "height position of nozzle device" in the third row, the vertical positions of the nozzle device 100 in the substrate processing apparatus 1 (nozzle upper position and nozzle lower position) are shown. To the right of the item "horizontal position of nozzle device" in the fourth row, the position of the nozzle device 100 in the horizontal plane in the substrate processing apparatus 1 is shown. The "standby position" shown as the horizontal position is the standby position of the nozzle device 100, and is set in advance at a position outside (to the side) of the outer cup 30A. In addition, the "substrate outer peripheral edge" is the position of the nozzle device 100 when the nozzle device 100 overlaps with the outer peripheral edge of the substrate W in a plan view, that is, when the nozzle device 100 is above the outer peripheral edge of the substrate W. In addition, the "substrate center" is the position of the nozzle device 100 when the nozzle device 100 overlaps with the center WC of the substrate W in a plan view, that is, when the nozzle device 100 is above the center WC of the substrate W.

[0061] To the right of the item "replacement liquid" in the fifth row, it is indicated whether or not the replacement liquid is supplied (supply or stop) from the replacement liquid supply system 60 to the nozzle device 100. To the right of the item "first gas" in the sixth row, it is indicated whether or not the first gas is supplied (supply or stop) from the first gas supply system 70 to the nozzle device 100. To the right of the item "second and third gases" in the seventh row, it is indicated whether or not the second gas and the third gas are supplied (supply or stop) from the second gas supply system 80 and the third gas supply system 90 to the nozzle device 100.

[0062] To the right of the eighth row item "Height position of outer cup" is shown the vertical position of the outer cup 30A in the substrate processing apparatus 1. To the right of the ninth row item "Height position of inner cup" is shown the vertical position of the inner cup 30B in the substrate processing apparatus 1. To the right of the tenth row item "Rotational speed of substrate" is shown the change in the rotational speed of the substrate W held and rotated by the substrate holding device 20.

[0063] First, in the initial state (time t0), the supply of the "chemical liquid" to the chemical liquid nozzle 41 is stopped. The supply of the "rinsing liquid" to the rinsing liquid nozzle 51 is stopped. The supply of the "replacement liquid", "first gas", and "second and third gases" to the nozzle device 100 is stopped. The "nozzle height position" is maintained at the nozzle upper position, the "nozzle horizontal position" is maintained at the standby position, and the "outer cup height position" and the "inner cup height position" are maintained at the cup lower position. Furthermore, in the initial state, the substrate W is not held by the substrate holding device 20, so the "substrate rotation speed" is 0 rpm.

[0064] At time t1, the substrate W is loaded into the chamber CH of the substrate processing apparatus 1, and placed on the substrate holding part 21. The substrate W is held by the substrate holding part 21. Next, chemical processing is performed on the substrate W from time t2 to time t3. Specifically, rotation of the substrate W held by the substrate holding part 21 begins from time t2. The rotation speed is increased from 0 rpm to a relatively high first speed, and is maintained at the first speed. In this embodiment, the first speed is 1500 rpm.

[0065] 8, while the rotation speed of the substrate W is maintained at a first speed, the chemical liquid nozzle 41 is disposed at a processing position above the substrate W. Furthermore, the chemical liquid L1 is discharged from the chemical liquid nozzle 41 toward the center WC of the substrate W for a predetermined period of time. As a result, a liquid film of the chemical liquid L1 spreads over the entire upper surface of the substrate W.

[0066] As described above, the chemical processing progresses. During the chemical processing, the chemical liquid L1 splashes from the rotating substrate W. In order to catch the splashing chemical liquid L1, the outer cup 30A is set to the cup-up position immediately before time t2. As a result, the chemical liquid L1 caught by the outer cup 30A is discarded through the outer container 39A. In FIG. 8, the height position of the upper end of the outer cup 30A in the cup-up position is indicated by the symbol RP.

[0067] Next, after the discharge of the chemical liquid L1 from the chemical liquid nozzle 41 to the substrate W is stopped, a rinsing process of the substrate W is performed from time t3 to time t4. In the rinsing process, the rotation speed of the substrate W is maintained at a first speed. Also, as shown in Fig. 9, the rinsing liquid L2 is discharged from the rinsing liquid nozzle 51 toward the center WC of the substrate W. As a result, a liquid film of the rinsing liquid L2 spreads over the entire upper surface of the substrate W, and the chemical liquid L1 remaining on the substrate W is replaced with the rinsing liquid L2.

[0068] 9, a partially enlarged cross-sectional view of the substrate W during the rinsing process is shown within the bubble indicated by the two-dot chain line. According to the cross-sectional view, a number of grooves having a depth in a direction perpendicular to the substrate W (in this example, the vertical direction) are formed in a predetermined pattern on the upper surface of the substrate W. The rinsing liquid L2 fills the entire interior of each groove.

[0069] The rinsing process proceeds as described above. During the rinsing process, mainly the rinsing liquid L2 splashes from the rotating substrate W. In order to catch the splashing rinsing liquid L2, the inner cup 30B is set to the upper cup position immediately before time t3. As a result, the rinsing liquid L2 caught by the inner cup 30B is discarded through the inner container 39B. In certain figures from FIG. 9 onwards, the height position of the upper end of the inner cup 30B in the upper cup position is indicated by the symbol RP.

[0070] Next, after the rinsing process is completed, a drying process is performed on the substrate from time t4 to time t6. In the drying process, first, as a pre-process, a process is performed in which the rinsing liquid L2 remaining on the substrate W is replaced with the replacement liquid L3 from time t4 to time t5. Time t41 and time t42 described below represent specific time points between time t4 and time t5.

[0071] Specifically, with the lapse of time t4, the nozzle device 100 is moved horizontally from the standby position to the center of the substrate while the height position of the nozzle device 100 is maintained at the nozzle up position HP. The nozzle up position HP is a height position higher than the cup up positions of the outer cup 30A and the inner cup 30B. As a result, the lower end of the nozzle device 100 (the replacement liquid discharge port 62 and the first gas jet port 72 in FIG. 5) faces the center WC of the substrate W, as shown in FIG. 10.

[0072] After the time point t4, the second gas and the third gas are further supplied from the second gas supply system 80 and the third gas supply system 90 to the nozzle device 100. As a result, as shown by the thick solid arrow in Fig. 10, a flow F23 of the second gas and the third gas is formed in the horizontal direction from the vicinity of the lower end of the nozzle device 100 (specifically, the second gas ejection port 131 and the third gas ejection port 132 in Fig. 5). In this embodiment, the flow rate of the second gas supplied to the nozzle device 100 is 72.5 L / min, and the flow rate of the third gas supplied to the nozzle device 100 is also 72.5 L / min.

[0073] Furthermore, after time t4, the substrate holding device 20 is controlled to reduce the rotation speed of the substrate W from the first speed to a second speed lower than the first speed, and is maintained at the second speed. In this embodiment, the second speed is 100 rpm.

[0074] At time t41, a short period of time after time t4, the substitute liquid L3 is supplied from the substitute liquid supply system 60 to the nozzle device 100. In this embodiment, the flow rate of the substitute liquid L3 supplied to the nozzle device 100 is 0.1 L / min or more and 0.5 L / min or less. In this case, as shown in FIG. 11, the substitute liquid L3 is discharged from the lower end of the nozzle device 100 (the substitute liquid discharge port 62 in FIG. 5) toward the center WC of the substrate W. As a result, a liquid film of the substitute liquid L3 spreads over the entire upper surface of the substrate W. At this time, as shown in the upper part of the two-dot chain line blowout in FIG. 11, the substitute liquid L3 discharged in a direction perpendicular to the substrate W is smoothly guided into the inside of a plurality of grooves formed on the substrate W. In addition, since the substitute liquid L3 is discharged from the nozzle device 100 at the nozzle upper position HP, it collides with the surface of the substrate W with higher energy than when it is discharged from the nozzle device 100 at the nozzle lower position. As a result, the rinse liquid L2 remaining in the groove located at the center WC of the substrate W is efficiently replaced by the substitute liquid L3.

[0075] However, in regions other than the center WC of the substrate W, the substitute liquid L3 flows horizontally toward the peripheral edge of the substrate W, and is therefore unlikely to enter the interiors of the grooves. Therefore, as shown in the lower part of the two-dot chain line bubble in Fig. 11, it is highly likely that the interiors of most of the grooves will be maintained in a state in which the rinsing liquid L2 remains. Therefore, in this example, from time t42, which is a short period after time t41, to time t5, the nozzle device 100 is moved horizontally from the center of the substrate to the outer peripheral edge of the substrate while the height position of the nozzle device 100 is maintained at the nozzle upper position HP.

[0076] In this case, as shown in Fig. 12, the rinsing liquid L2 in the groove located directly below the nozzle device 100 is forcibly replaced with the replacement liquid L3 as the nozzle device 100 moves. Then, as shown in Fig. 13, the nozzle device 100 reaches the outer circumferential edge of the substrate at time t5, whereby the replacement liquid L3 fills all of the grooves on the substrate W and the rinsing liquid is removed. The time from time t42 to time t5 is, for example, 5 sec.

[0077] As described above, in the step of replacing the rinsing liquid L2 on the substrate W with the replacement liquid L3, the nozzle device 100 is maintained at the nozzle over position HP. Also, as described above, the nozzle over position HP is above the cup over positions of the outer cup 30A and the inner cup 30B. This prevents the nozzle device 100 from interfering with the outer cup 30A and the inner cup 30B when the replacement liquid L3 is discharged onto the outer peripheral edge of the substrate W and the area in the vicinity thereof.

[0078] Subsequently, as a post-drying process, a process of removing the substitute liquid L3 remaining on the substrate W is performed from time t5 to time t6. Time t51, time t52, time t53, and time t54 described below represent specific time points between time t5 and time t6.

[0079] Specifically, after time t5, the supply of the replacement liquid L3 from the replacement liquid supply system 60 to the nozzle device 100 is stopped. Thereafter, as shown in Fig. 14, the nozzle device 100 is moved horizontally from the outer circumferential edge of the substrate to the center of the substrate while the height position of the nozzle device 100 is maintained at the nozzle upper position HP.

[0080] Next, at time t51 after a short period of time has elapsed from time t5, a first gas is supplied from the first gas supply system 70 to the nozzle device 100 with the nozzle device 100 positioned above the center WC of the substrate W. In this embodiment, the flow rate of the first gas supplied to the nozzle device 100 is 5 L / min, 25 L / min or 50 L / min. In this case, as shown in Fig. 15, the first gas is ejected from the lower end of the nozzle device 100 (first gas ejection port 72 in Fig. 5) toward the center WC of the substrate W.

[0081] At this time, the nozzle device 100 is at the nozzle up position HP. Therefore, a relatively large distance is ensured between the nozzle device 100 and the substrate W. Therefore, the degree of impact generated when the first gas jetted from the nozzle device 100 collides with the substrate W is sufficiently lower than when the first gas is jetted with the nozzle device 100 at the nozzle down position. Therefore, as shown in the two-dot chain line balloon in FIG. 15, at time t51, the replacement liquid L3 on the substrate W is hardly affected by the first gas.

[0082] Next, at time t52, the rotation speed of the substrate W is increased from the second speed to a third speed that is higher than the second speed and lower than the first speed, and is maintained at the third speed. In the present embodiment, the third speed is 300 rpm.

[0083] 16, from time t52 to time t53, the height position of the nozzle device 100 is lowered from the nozzle upper position HP to the nozzle lower position LP. The nozzle lower position LP is a height position that is lower than the nozzle upper position HP and higher than the substrate W. This causes the degree of impact when the first gas ejected from the nozzle device 100 collides with the substrate W to gradually increase.

[0084] 16, the first gas ejected in a direction perpendicular to the substrate W is smoothly guided into the grooves of the pattern formed on the substrate W. As a result, the rinsing liquid L2 remaining in the grooves located at the center WC of the substrate W is completely removed by the replacement liquid L3 at time t53.

[0085] However, in the region other than the center WC of the substrate W, the first gas is not blown to the bottom of each groove, so that it is difficult to completely remove the substitute liquid L3 remaining inside the groove. Therefore, in this example, from time t53 to time t6, the nozzle device 100 is moved horizontally from the center of the substrate to the outer peripheral edge of the substrate while the height position of the nozzle device 100 is maintained at the nozzle lower position LP. In this case, as shown in FIG. 17, as the nozzle device 100 moves, the substitute liquid L3 in the groove located directly below the nozzle device 100 is forcibly blown away and removed by the first gas. Thereafter, as shown in FIG. 18, the nozzle device 100 reaches the outer peripheral edge of the substrate at time t6, so that the substitute liquid L3 in all the grooves on the substrate W is completely removed, and the substrate W is dried. The time from time t53 to time t6 is, for example, 10 seconds.

[0086] Incidentally, when the nozzle device 100 at the nozzle down position LP moves toward the outer circumferential edge of the substrate W with the outer cup 30A and the inner cup 30B at the cup up position, there is a high possibility that the nozzle device 100 will interfere with the outer cup 30A and the inner cup 30B. Therefore, in this example, at time t54 immediately before time t6 at which the nozzle device 100 reaches the outer circumferential edge of the substrate, the height positions of the outer cup 30A and the inner cup 30B are changed from the cup up position to the cup down position.

[0087] In this manner, the drying process ends at time t6. After the drying process ends, the supply of the first gas, the second gas, and the third gas to the nozzle device 100 is stopped. Furthermore, the height position of the nozzle device 100 is adjusted to the nozzle upper position HP, and the nozzle device 100 is returned to the standby position. Furthermore, the rotation of the substrate W is stopped. In this state, the substrate W is unloaded from the chamber CH of the substrate processing apparatus 1.

[0088] 4. Effects of the embodiment (a) In the above-described substrate processing apparatus 1, an operation of replacing the rinsing liquid remaining on the substrate W by the rinsing process with the replacement liquid is performed in a pre-drying process. Specifically, the nozzle device 100 is disposed at the nozzle upper position HP, and the replacement liquid outlet 62 faces the center WC of the substrate W. In this state, the replacement liquid is discharged downward from the replacement liquid outlet 62 of the nozzle device 100. In addition, the nozzle device 100 is moved in the horizontal direction from the center of the substrate to the outer peripheral edge of the substrate. In this case, the nozzle device 100 is held at a height position spaced apart from the substrate W, compared to when the nozzle device 100 is at the nozzle lower position LP. In particular, the nozzle upper position HP is located above the upper ends of the outer cup 30A and the inner cup 30B, which are at the cup upper position. Therefore, when the nozzle device 100 moves toward the outer peripheral edge of the substrate, the nozzle device 100 does not interfere with the outer cup 30A and the inner cup 30B.

[0089] Furthermore, when the nozzle device 100 moves horizontally from the center of the substrate to the outer peripheral edge of the substrate, the substitute liquid is discharged in a direction perpendicular to the substrate W over a wide range of the upper surface of the substrate W. At this time, the substitute liquid is discharged from the nozzle upper position HP and collides with the surface of the substrate W with higher energy than when it is discharged from the nozzle lower position LP. Therefore, the rinsing liquid remaining inside the grooves on the substrate W is efficiently replaced by the substitute liquid, and the rinsing liquid remaining inside the grooves is smoothly removed.

[0090] Subsequently, in a post-drying process, an operation of replacing the substitute liquid remaining on the substrate W with the first gas and drying the substrate W is performed. Specifically, the nozzle device 100 is disposed at the nozzle upper position HP, and the first gas ejection port 72 faces the center WC of the substrate W. In this state, the first gas is ejected downward from the first gas ejection port 72 of the nozzle device 100. While the state of ejecting the first gas is maintained, the nozzle device 100 descends from the nozzle upper position HP to the nozzle lower position LP. At this time, the degree of impact generated when the first gas ejected from the first gas ejection port 72 collides with the substrate W increases gradually with the movement of the nozzle device 100 from the nozzle upper position HP to the nozzle lower position LP. Therefore, the change in the impact applied to the substitute liquid on the substrate W is mitigated compared to the case where the ejection of the first gas is started when the nozzle device 100 is at the nozzle lower position LP. Therefore, the scattering of the substitute liquid generated by the collision of the first gas with the substrate W is reduced. This prevents the replacement liquid scattered from the substrate W from adhering again to the substrate W, thereby preventing a decrease in the cleanliness of the substrate W.

[0091] Thereafter, while the nozzle device 100 is in the nozzle down position LP and continues to spray the first gas, the nozzle device 100 is moved in the horizontal direction from the center of the substrate to the outer peripheral edge of the substrate. In this case, the first gas is sprayed in a direction perpendicular to the substrate W over a wide range of the upper surface of the substrate W. As a result, the substitute liquid remaining inside the many grooves on the substrate W is efficiently replaced by the first gas. Therefore, the substitute liquid remaining inside each groove is smoothly removed, and the substrate W is dried. During this drying, the substitute liquid has a lower surface tension than the rinse liquid, so that the pattern formed on the substrate W is less likely to be damaged (such as the collapse of the pattern) due to the surface tension of the substitute liquid. As a result, it is possible to properly remove the rinse liquid remaining on the substrate W after the pattern is formed thereon from the substrate W.

[0092] (b) When the nozzle device 100 is positioned in the space above the substrate W, the second gas is ejected from the second gas ejection port 131. In this case, a flow of the second gas is formed at a position above the substrate W so as to spread in a planar shape in a direction parallel to the upper surface of the substrate W. This prevents particles scattered at a position above the second gas ejection port 131 from falling onto the substrate W. This prevents a decrease in the cleanliness of the substrate W after drying.

[0093] (c) When the nozzle device 100 is positioned in the space above the substrate W, the second gas is jetted from the second gas jetting port 131, while the third gas is jetted from the third gas jetting port 132. The flow of the third gas jetted from the third gas jetting port 132 blocks the flow of gas between the space above the third gas jetting port 132 and the space below the third gas jetting port 132. This further prevents contaminants such as particles from falling onto the substrate W from the space above the third gas jetting part.

[0094] Furthermore, when the nozzle device 100 is in one attitude, the third gas ejection port 132 is located above the second gas ejection port 131. This makes it possible to fill the space below the third gas ejection port 132 and above the substrate W with the second gas when the second gas and the third gas are ejected simultaneously from the nozzle device 100. This makes it possible to maintain the space surrounding the substrate W in a clean and less reactive environment, that is, a chemically stable environment.

[0095] (d) As described above, the nozzle upper position HP is a height position higher than the cup upper positions of the outer cup 30A and the inner cup 30B. On the other hand, the nozzle lower position LP is a height position lower than the nozzle upper position HP and higher than the substrate W.

[0096] Here, it is preferable that the nozzle lower position LP is set so that when the second gas and the third gas are ejected from the nozzle device 100 in the space above the substrate W, at least a portion of the openings of the two gas ejection ports (131, 132) faces toward the space above the upper ends of the two cups (30A, 30B).

[0097] In this case, while the nozzle device 100 is present in the space above the substrate W, the flow of gas injected from at least a part of the openings of the two gas injection ports (131, 132) blocks the flow of gas between the space above the upper ends of the two cups (30A, 30B) and the space below the upper ends of the two cups (30A, 30B). This substantially seals the spaces within the two cups (30A, 30B), reducing the adhesion of contaminants such as particles floating in the space surrounding the two cups (30A, 30B) to the substrate W.

[0098] 5. Other embodiments (a) In the substrate processing apparatus 1 according to the above embodiment, in a pre-drying process, the nozzle device 100 moves from the center of the substrate to the outer peripheral edge of the substrate while discharging the replacement liquid from the nozzle device 100 located at the nozzle upper position HP. This operation is called the first operation.

[0099] Furthermore, in the substrate processing apparatus 1 according to the above embodiment, in a post-drying process, the nozzle device 100 descends from the nozzle upper position HP to the nozzle lower position LP while spraying the first gas toward the center WC of the substrate W. Thereafter, the nozzle device 100 moves from the center of the substrate to the outer peripheral edge of the substrate while spraying the first gas from the nozzle device 100 at the nozzle lower position LP. This series of operations is called the second operation.

[0100] As described above, each of the first operation and the second operation effectively functions to properly remove the rinsing liquid remaining on the substrate W after the rinsing process from the substrate W. Therefore, when the substrate processing apparatus 1 performs the first operation in a pre-step of the drying process, the replacement liquid on the substrate W may be removed in a post-step of the drying process by an operation different from the second operation. An example of the operation different from the second operation is rotating the substrate W at a high rotation speed without injecting gas onto the substrate W in a post-step of the drying process.

[0101] Furthermore, when the substrate processing apparatus 1 performs the second operation in a post-drying process, the substrate processing apparatus 1 may be configured to replace the rinsing liquid on the substrate W with the replacement liquid in an operation different from the first operation in a pre-drying process. An example of the operation different from the first operation is supplying the replacement liquid only to the center WC of the rotating substrate W in the pre-drying process.

[0102] (b) In the substrate processing apparatus 1 according to the above embodiment, the replacement liquid supply system 60 may be configured to supply replacement liquid heated to a predetermined temperature to the nozzle device 100. Fig. 19 is a schematic side view of the substrate processing apparatus 1 according to another embodiment. The configuration and operation of the substrate processing apparatus 1 in Fig. 19 that differ from the configuration and operation of the substrate processing apparatus 1 in Fig. 1 according to the above embodiment will be described below.

[0103] 19, in the substrate processing apparatus 1 of this example, the substitute liquid supply system 60 includes a substitute liquid supply source 63 and a substitute liquid temperature adjustment unit 64. The substitute liquid supply source 63 is formed of, for example, a tank in which the substitute liquid is stored, and supplies the substitute liquid to the substitute liquid temperature adjustment unit 64. The substitute liquid temperature adjustment unit 64 heats the substitute liquid supplied from the substitute liquid temperature adjustment unit 64 to a temperature higher than room temperature (for example, 25° C.). Specifically, the substitute liquid temperature adjustment unit 64 heats the substitute liquid to adjust the temperature of the substitute liquid to about 70° C.

[0104] In this case, in a pre-drying process step, a replacement liquid at about 70° C. can be supplied from the replacement liquid supply system 60 to the nozzle device 100. As a result, the rinsing liquid remaining on the substrate W after the rinsing process is replaced with a replacement liquid at a temperature higher than room temperature. In addition, by supplying a replacement liquid at a temperature higher than room temperature to the substrate W, the temperature of the substrate W can be maintained higher than room temperature. As a result, in a post-drying process step, the replacement liquid on the substrate W is more easily evaporated, and the time required to dry the substrate W can be shortened.

[0105] (c) In the substrate processing apparatus 1 according to the above embodiment, a mechanical spin chuck that holds the outer peripheral edge of the substrate W is used as the substrate holding unit 21, but the present invention is not limited to this. A suction-type spin chuck that suction-holds the central portion of the lower surface of the substrate W may also be used as the substrate holding unit 21.

[0106] (d) In the substrate processing apparatus 1 according to the above embodiment, the cup-up position of the outer cup 30A is the same as the cup-up position of the inner cup 30B, and the cup-down position of the outer cup 30A is the same as the cup-down position of the inner cup 30B, but the present invention is not limited thereto. The cup-up position of the outer cup 30A may be different from the cup-up position of the inner cup 30B. The cup-down position of the outer cup 30A may be different from the cup-down position of the inner cup 30B. Furthermore, the outer cup 30A and the inner cup 30B may be configured to be independently movable up and down without interfering with each other. In this case, it is preferable that the nozzle-up position HP of the nozzle device 100 is set to a position above the upper end of the outer cup 30A at the cup-up position and the upper end of the inner cup 30B at the cup-up position.

[0107] (e) In the post-drying process in the above embodiment, in order to prevent interference between the nozzle device 100 and the outer cup 30A and inner cup 30B, the outer cup 30A and inner cup 30B are lowered from the cup above position to the cup below position during horizontal movement of the nozzle device 100 which is in the nozzle below position LP, but the present invention is not limited to this.

[0108] If the size of the nozzle device 100 is sufficiently small so that the nozzle device 100 does not interfere with the outer cup 30A and the inner cup 30B which are in the above-cup position when the first gas is sprayed from the nozzle device 100 onto the outer peripheral edge of the substrate W, the outer cup 30A and the inner cup 30B may be maintained in the above-cup position during the drying process.

[0109] If the nozzle device 100 can spray the first gas over the entire pattern formation region on the substrate W by moving horizontally within a range where it does not interfere with the outer cup 30A and the inner cup 30B at the cup over position, the range of horizontal movement of the nozzle device 100 may be limited. Alternatively, if the nozzle device 100 can sufficiently dry the entire substrate W by moving horizontally within a range where it does not interfere with the outer cup 30A and the inner cup 30B at the cup over position, the range of horizontal movement of the nozzle device 100 may be limited. Here, limiting the range of horizontal movement of the nozzle device 100 means that the nozzle device 100 is moved horizontally within a range from the center of the substrate to a position a certain distance inside the outer peripheral edge of the substrate. In these cases, the outer cup 30A and the inner cup 30B may be held at the cup over position during the drying process.

[0110] (f) The nozzle device 100 according to the above embodiment has two gas ejection ports, the second gas ejection port 131 and the third gas ejection port 132, formed on the outer circumferential surface 130, but the present invention is not limited to this. One of the second gas ejection port 131 and the third gas ejection port 132 may not be formed.

[0111] 6. Correspondence between each component of the claims and each part of the embodiment Below, examples of the correspondence between each component of the claims and each element of the embodiment will be described, but the present invention is not limited to the following examples. Various other elements having the configuration or function described in the claims can also be used as each component of the claims.

[0112] In the above-described embodiment, the substrate processing apparatus 1 is an example of a substrate processing apparatus, the rinsing liquid remaining on the substrate W after the rinsing process is an example of a residual liquid, the substrate holding apparatus 20 is an example of a substrate holding portion, the replacement liquid outlet 62 is an example of a liquid outlet portion, the first gas jet port 72 is an example of a first gas jet portion, the second gas jet port 131 is an example of a second gas jet portion, and the nozzle apparatus 100 is an example of a nozzle apparatus.

[0113] In addition, the replacement liquid is an example of a processing liquid, the first gas is an example of a first gas, the second gas is an example of a second gas, the replacement liquid supply system 60, the first gas supply system 70, the second gas supply system 80 and the third gas supply system 90 are examples of fluid supply systems, the nozzle upper position HP is an example of an upper position, the nozzle lower position LP is an example of a lower position, the nozzle movement device 150 is an example of a relative movement device, and the control unit 200 is an example of a control unit.

[0114] Furthermore, the inner cup 30B is an example of a processing cup, the third gas injection port 132 is an example of a third gas injection section, the third gas is an example of a third gas, the outer peripheral surface 130 of the nozzle main body 101 is an example of an outer peripheral surface, and the replacement liquid temperature adjustment section 64 is an example of a temperature adjustment section.

[0115] Also, the control of the substrate processing apparatus 1 corresponding to the whole operation of the post-drying process is an example of gas replacement control. Furthermore, as shown in FIG. 14, the control of the substrate processing apparatus 1 when the nozzle device 100 at the nozzle upper position HP moves in the horizontal direction from the outer peripheral edge of the substrate to the center of the substrate in the post-drying process is an example of the first gas replacement control. Also, as shown in FIG. 15 and FIG. 16, the control of the substrate processing apparatus 1 when the nozzle device 100 moves down from the nozzle upper position HP to the nozzle lower position LP while injecting the first gas toward the center WC of the substrate W is an example of the second gas replacement control. Also, as shown in FIG. 17 and FIG. 18, the control of the substrate processing apparatus 1 when the nozzle device 100 moves horizontally from the center of the substrate to the outer peripheral edge of the substrate while injecting the first gas is an example of the third gas replacement control.

[0116] Also, control of the substrate processing apparatus 1 corresponding to the overall operation of the pre-drying process is an example of liquid replacement control. Furthermore, as shown in Fig. 10, control of the substrate processing apparatus 1 when the nozzle device 100 at the nozzle upper position HP moves horizontally from the standby position to the center of the substrate in the pre-drying process is an example of a first liquid replacement control. Also, as shown in Figs. 11 to 13, control of the substrate processing apparatus 1 when the nozzle device 100 moves horizontally from the center of the substrate to the outer peripheral edge of the substrate while discharging the replacement liquid is an example of a second liquid replacement control.

[0117] 7. Summary of the embodiment (Item 1) The substrate processing apparatus according to item 1 comprises: 1. A substrate processing apparatus for removing a residual liquid remaining on a substrate after a pattern is formed thereon, comprising: a substrate holder that holds the substrate and rotates it around an axis extending in a vertical direction; A nozzle device having a liquid discharge portion, a first gas ejection portion and a second gas ejection portion; a fluid supply system that supplies a processing liquid having a surface tension lower than that of the residual liquid, a first gas, and a second gas to the nozzle device; a relative movement device that moves the nozzle device in one attitude relative to the substrate between an upper position that is a predetermined distance above the substrate held by the substrate holding unit and a lower position that is below the upper position and above the substrate, and moves the nozzle device in the one attitude relatively in a horizontal direction with respect to the substrate; A control unit. the liquid discharge portion is configured to discharge the processing liquid supplied from the fluid supply system downward when the nozzle device is in the one position, the first gas ejection section is configured to eject the first gas supplied from the fluid supply system downward when the nozzle device is in the one position, the second gas ejection unit is formed to eject the second gas supplied from the fluid supply system radially toward an outer circumferential edge of the substrate in a plan view when the nozzle device is in the one attitude and is disposed in a space above the substrate held by the substrate holding unit, The control unit is controlling the substrate holding unit so that the substrate held by the substrate holding unit rotates; performing liquid replacement control for controlling the fluid supply system and the relative movement device so that the processing liquid is discharged from the liquid discharge unit of the nozzle device onto the substrate in a state in which the residual liquid remains on the substrate held by the substrate holding unit; performing a first gas replacement control for controlling the relative movement device such that, after the liquid replacement control, the nozzle device is located at the upper position and the first gas ejection part faces a center of the substrate while the processing liquid is present on the substrate; performing a second gas replacement control for controlling the fluid supply system and the relative movement device such that the nozzle device descends from the upper position to the lower position while the first gas and the second gas are respectively injected from the first gas injection unit and the second gas injection unit after the first gas replacement control; After the second gas replacement control, a third gas replacement control is performed to control the fluid supply system and the relative movement device so that the nozzle device in the lower position moves from the center of the substrate toward the outer circumferential end while the first gas and the second gas are respectively sprayed from the first gas injection section and the second gas injection section.

[0118] In the substrate processing apparatus, the residual liquid on the substrate is replaced with the processing liquid by the liquid replacement control. Then, the nozzle device is placed at the upper position and the first gas injection unit faces the center of the substrate by the first gas replacement control. In this state, the gas is injected downward from the first gas injection unit of the nozzle device by the second gas replacement control. The nozzle device is lowered from the upper position to the lower position while maintaining the state in which the gas is injected downward from the first gas injection unit. At this time, the degree of impact generated when the first gas injected from the first gas injection unit collides with the substrate increases gradually with the movement of the nozzle device from the upper position to the lower position. Therefore, the change in the impact applied to the processing liquid on the substrate is mitigated compared to the case in which the injection of the first gas is started with the nozzle device in the lower position. Therefore, the scattering of the processing liquid generated by the collision of the first gas with the substrate is reduced. As a result, the deterioration of the cleanliness of the substrate caused by the processing liquid scattered from the substrate reattaching to the substrate is suppressed.

[0119] On the substrate after the pattern formation, a large number of grooves having a depth in a direction perpendicular to the substrate are formed. According to the above configuration, the third gas replacement control is performed, so that the first gas can be sprayed over a wide range of the upper surface of the substrate in a direction perpendicular to the substrate. As a result, the processing liquid remaining inside the grooves on the substrate is efficiently replaced by the first gas. Therefore, the processing liquid remaining inside the grooves is smoothly removed, and the substrate is dried. During this drying, the processing liquid removed from the substrate has a lower surface tension than the remaining liquid, so that the pattern formed on the substrate is less likely to be damaged due to the surface tension of the processing liquid. As a result, the residual liquid remaining on the substrate after the pattern formation can be appropriately removed from the substrate.

[0120] Furthermore, during the second and third gas replacement controls, the second gas is injected from the second gas injection unit. In this case, a flow of the second gas is formed at a position above the substrate so as to spread in a planar shape in a direction parallel to the upper surface of the substrate. This prevents particles scattered at a position above the second gas injection unit from falling onto the substrate. Therefore, a decrease in the cleanliness of the substrate after drying is suppressed.

[0121] (2) In the substrate processing apparatus according to the first aspect, The substrate processing apparatus includes: a processing cup that is formed to surround the substrate held by the substrate holding portion in a plan view and that receives processing liquid that splashes from the substrate when the processing liquid is supplied to the substrate held by the substrate holding portion; The upper position may be a position above an upper end of the processing cup when the processing liquid is supplied to the substrate held by the substrate holding part.

[0122] In this case, a large distance can be secured between the nozzle device and the substrate when the ejection of the first gas by the second gas replacement control starts, which further reduces the impact of the first gas colliding with the substrate and further reduces scattering of the processing liquid.

[0123] (Item 3) In the substrate processing apparatus according to item 2, The nozzle device further includes a third gas injection portion, the fluid supply system further supplies a third gas to the nozzle device; The third gas injection section may be located above the second gas injection section, and may be configured to inject the third gas supplied from the fluid supply system radially toward the outer peripheral edge of the substrate in a planar view when the nozzle device is in the one posture and disposed in a space above the substrate held by the substrate holding section.

[0124] In this case, the flow of the third gas injected from the third gas injection unit blocks the flow of gas between the space above the third gas injection unit and the space below the third gas injection unit. This prevents contaminants such as particles from falling onto the substrate from the space above the third gas injection unit. In addition, in the second gas replacement control and the third gas replacement control, it becomes possible to fill the space below the third gas injection unit and above the substrate with the second gas. Therefore, by using an appropriate gas as the second gas, the space surrounding the substrate can be maintained in a clean and less reactive environment, i.e., a chemically stable environment.

[0125] (4) In the substrate processing apparatus according to the third aspect, The nozzle device has a cylindrical outer circumferential surface extending in a vertical direction when in the one position, Each of the second gas injection portion and the third gas injection portion includes an annular opening extending in a circumferential direction of the outer circumferential surface, At least a portion of the opening of the second gas injection section and the opening of the third gas injection section may be formed to face a space above an upper end of the processing cup during the third gas replacement control.

[0126] In this case, the flow of gas injected from at least a part of the openings of the second gas injection unit and the third gas injection unit blocks the flow of gas between the space above the upper end of the processing cup and the space below the upper end of the processing cup, thereby substantially sealing the space in the processing cup and reducing adhesion of contaminants such as particles floating in the space surrounding the processing cup to the substrate.

[0127] (Item 5) In the substrate processing apparatus according to any one of items 1 to 4, The liquid replacement control includes: a first liquid replacement control for controlling the relative movement device so that the nozzle device is located at the upper position and the liquid discharge part faces a center of the substrate while the residual liquid is present on the substrate held by the substrate holding part; The method may include a second liquid replacement control that controls the fluid supply system and the relative movement device so that, after the first liquid replacement control, the processing liquid is ejected from the liquid ejection section while the nozzle device in the upper position moves from the center of the substrate toward the outer circumferential edge portion.

[0128] In this case, the processing liquid can be discharged from the center to the periphery of the rotating substrate in a direction perpendicular to the substrate. Furthermore, by discharging the processing liquid from an upper position, the processing liquid collides with the surface of the substrate with higher energy than when the processing liquid is discharged from a lower position. This allows the residual liquid remaining on the substrate to be efficiently replaced by the processing liquid. As a result, the residual liquid remaining on the substrate can be more appropriately removed from the substrate.

[0129] (Item 6) In the substrate processing apparatus according to any one of items 1 to 5, The fluid supply system may include a temperature adjustment unit that adjusts a temperature of the treatment liquid supplied to the nozzle device to a temperature higher than room temperature.

[0130] In this case, during liquid replacement control, the residual liquid remaining on the substrate is replaced with the processing liquid having a temperature higher than room temperature.

[0131] (Item 7) The substrate processing apparatus according to item 7 comprises: 1. A substrate processing apparatus for removing a residual liquid remaining on a substrate after a pattern is formed thereon, comprising: a substrate holder that holds the substrate and rotates it around an axis extending in a vertical direction; A nozzle device having a liquid discharge portion, a first gas ejection portion and a second gas ejection portion; a fluid supply system that supplies a processing liquid having a surface tension lower than that of the residual liquid, a first gas, and a second gas to the nozzle device; a relative movement device that moves the nozzle device in one attitude relative to the substrate between an upper position that is a predetermined distance above the substrate held by the substrate holding unit and a lower position that is below the upper position and above the substrate, and moves the nozzle device in the one attitude relatively in a horizontal direction with respect to the substrate; A control unit. the liquid discharge portion is configured to discharge the processing liquid supplied from the fluid supply system downward when the nozzle device is in the one position, the first gas ejection section is configured to eject the first gas supplied from the fluid supply system downward when the nozzle device is in the one position, the second gas ejection unit is formed to eject the second gas supplied from the fluid supply system radially toward an outer circumferential edge of the substrate in a plan view when the nozzle device is in the one attitude and is disposed in a space above the substrate held by the substrate holding unit, The control unit is controlling the substrate holding unit so that the substrate held by the substrate holding unit rotates; performing a first liquid replacement control for controlling the relative movement device such that the nozzle device is located at the upper position and the liquid discharge part faces the center of the substrate while the residual liquid is present on the substrate held by the substrate holding part; performing a second liquid replacement control for controlling the fluid supply system and the relative movement device such that the nozzle device at the upper position moves from the center of the substrate toward the outer circumferential edge portion while the processing liquid is being discharged from the liquid discharge unit after the first liquid replacement control; After the second liquid replacement control, with the processing liquid present on the substrate held by the substrate holding unit, gas replacement control is performed to control the fluid supply system and the relative movement device so that the second gas is sprayed from the second gas injection unit of the nozzle device while the first gas is sprayed onto the substrate from the first gas injection unit of the nozzle device.

[0132] In substrate processing in which a processing liquid is supplied to a rotating substrate, a processing cup is used to catch the processing liquid splashed from the substrate. When the processing cup is in use, the processing cup is held at a height position approximately equal to that of the substrate, in a state in close proximity to the outer peripheral edge of the substrate. Therefore, if the nozzle device is located in close proximity to the substrate, there is a possibility that the processing cup and the nozzle device will interfere with each other.

[0133] In the substrate processing apparatus, the nozzle device is placed at an upper position by a first liquid replacement control, and the liquid discharger faces the center of the substrate. Then, the processing liquid is discharged from the liquid discharger to the substrate by a second liquid replacement control. Also, the nozzle device moves from the center of the substrate toward the outer peripheral edge of the substrate. In this case, the nozzle device is held at a height position spaced apart from the substrate compared to when the nozzle device is in the lower position. Therefore, when the nozzle device moves from the center of the substrate toward the outer peripheral edge, the nozzle device and the processing cup are less likely to interfere with each other.

[0134] Furthermore, on the substrate after the pattern formation, a large number of grooves having a depth in a direction perpendicular to the upper surface of the substrate are formed. According to the above configuration, the second liquid replacement control is performed, so that the processing liquid can be discharged in a direction perpendicular to the substrate over a wide range of the upper surface of the substrate. At this time, the processing liquid is discharged from an upper position, and thus collides with the surface of the substrate with higher energy than when the processing liquid is discharged from a lower position. Therefore, the residual liquid remaining inside the grooves on the substrate is efficiently replaced by the processing liquid. Therefore, the residual liquid remaining inside the grooves is smoothly removed.

[0135] After the second liquid replacement control, the processing liquid on the substrate is replaced with the first gas by the gas replacement control, and the substrate is dried. During this drying, the processing liquid removed from the substrate has a lower surface tension than the remaining liquid, so that the pattern formed on the substrate is less likely to be damaged due to the surface tension of the processing liquid. As a result, it becomes possible to properly remove the residual liquid remaining on the substrate after the pattern is formed.

[0136] Furthermore, during gas replacement control, the second gas is injected from the second gas injection unit. In this case, a flow of the second gas is formed above the substrate so as to spread in a plane in a direction parallel to the upper surface of the substrate. This prevents particles scattered above the second gas injection unit from falling onto the substrate. Therefore, the deterioration of the cleanliness of the substrate after drying is suppressed.

[0137] (Item 8) In the substrate processing apparatus according to item 7, The substrate processing apparatus includes: a processing cup that is formed to surround the substrate held by the substrate holding portion in a plan view and that receives processing liquid that splashes from the substrate when the processing liquid is supplied to the substrate held by the substrate holding portion; The upper position may be a position above an upper end of the processing cup when the processing liquid is supplied to the substrate held by the substrate holding part.

[0138] In this case, a large distance can be secured between the nozzle device and the substrate when the processing liquid is discharged by the second liquid replacement control. This allows the processing liquid discharged from the liquid discharger to collide with the surface of the substrate with high energy. As a result, the residual liquid remaining inside the grooves can be smoothly removed.

[0139] (Item 9) In the substrate processing apparatus according to item 8, The nozzle device further includes a third gas injection portion, the fluid supply system further supplies a third gas to the nozzle device; The third gas injection section may be located above the second gas injection section, and may be configured to inject the third gas supplied from the fluid supply system radially toward the outer peripheral edge of the substrate in a planar view when the nozzle device is in the one posture and disposed in a space above the substrate held by the substrate holding section.

[0140] In this case, the flow of the third gas injected from the third gas injection unit blocks the flow of gas between the space above the third gas injection unit and the space below the third gas injection unit. This prevents contaminants such as particles from falling onto the substrate from the space above the third gas injection unit. In addition, in the second gas replacement control and the third gas replacement control, it becomes possible to fill the space below the third gas injection unit and above the substrate with the second gas. Therefore, by using an appropriate gas as the second gas, the space surrounding the substrate can be maintained in a clean and less reactive environment, i.e., a chemically stable environment.

[0141] (Item 10) In the substrate processing apparatus according to item 9, The nozzle device has a cylindrical outer circumferential surface extending in a vertical direction when in the one position, Each of the second gas injection portion and the third gas injection portion includes an annular opening extending in a circumferential direction of the outer circumferential surface, At least a portion of the opening of the second gas injection section and the opening of the third gas injection section may be formed to face a space above an upper end of the processing cup during the gas replacement control.

[0142] In this case, the flow of gas injected from at least a part of the openings of the second gas injection unit and the third gas injection unit blocks the flow of gas between the space above the upper end of the processing cup and the space below the upper end of the processing cup, thereby substantially sealing the space in the processing cup and reducing adhesion of contaminants such as particles floating in the space surrounding the processing cup to the substrate.

[0143] (Item 11) The substrate processing method according to item 11, A substrate processing method for removing a residual liquid remaining on a substrate after a pattern is formed thereon by using a nozzle device, the method comprising the steps of: the nozzle device has a liquid ejection unit, a first gas ejection unit and a second gas ejection unit, the liquid discharge portion is configured to discharge the processing liquid supplied to the nozzle device downward when the nozzle device is in one position; the first gas ejection section is configured to eject a first gas supplied to the nozzle device downward when the nozzle device is in the one position; the second gas ejection unit is formed to eject the second gas supplied to the nozzle device radially toward an outer circumferential edge of the substrate in a plan view when the nozzle device is in the one attitude and is disposed in a space above the substrate held by a substrate holding unit, the treatment liquid has a lower surface tension than the residual liquid; The substrate processing method includes: rotating the substrate held by the substrate holder around an axis extending in a vertical direction while holding the substrate; a liquid replacement step of disposing the nozzle device above the substrate in a state where the residual liquid remains on the substrate held by the substrate holding unit, and discharging the processing liquid from the liquid discharge unit onto the substrate by supplying the processing liquid to the nozzle device; a first gas replacement step of disposing the nozzle device at an upper position a predetermined distance above the substrate so that the first gas jetting part faces a center of the substrate while the processing liquid is on the substrate after the liquid replacement step; a second gas replacement step of lowering the nozzle device to a lower position lower than the upper position and higher than the substrate while supplying the first gas and the second gas to the nozzle device to inject the first gas and the second gas from the first gas injection unit and the second gas injection unit, respectively, after the first gas replacement step; and a third gas replacement step of supplying the first gas and the second gas to the nozzle device after the second gas replacement step, thereby causing the first gas and the second gas to be sprayed from the first gas injection section and the second gas injection section, respectively, while moving the nozzle device in the lower position from the center of the substrate toward the outer circumferential edge section.

[0144] In the substrate processing method, the liquid replacement step replaces the residual liquid on the substrate with the processing liquid. Then, the first gas replacement step places the nozzle device at the upper position, and the first gas injection unit faces the center of the substrate. In this state, the second gas replacement step injects gas downward from the first gas injection unit of the nozzle device. The nozzle device descends from the upper position to the lower position while maintaining the state in which the gas is injected downward from the first gas injection unit. At this time, the degree of impact generated when the first gas injected from the first gas injection unit collides with the substrate increases gradually with the movement of the nozzle device from the upper position to the lower position. Therefore, the change in impact applied to the processing liquid on the substrate is mitigated compared to when the injection of the first gas is started with the nozzle device in the lower position. Therefore, the scattering of the processing liquid generated by the collision of the first gas with the substrate is reduced. This suppresses the reduction in the cleanliness of the substrate caused by the processing liquid scattered from the substrate reattaching to the substrate.

[0145] On the substrate after the pattern formation, a large number of grooves having a depth in a direction perpendicular to the substrate are formed. According to the above method, the third gas replacement step is performed, so that the first gas can be sprayed over a wide range of the upper surface of the substrate in a direction perpendicular to the substrate. As a result, the processing liquid remaining inside the grooves on the substrate is efficiently replaced by the first gas. Therefore, the processing liquid remaining inside the grooves is smoothly removed, and the substrate is dried. During this drying, the processing liquid removed from the substrate has a lower surface tension than the remaining liquid, so that the pattern formed on the substrate is less likely to be damaged due to the surface tension of the processing liquid. As a result, the residual liquid remaining on the substrate after the pattern formation can be appropriately removed from the substrate.

[0146] Furthermore, in the second and third gas replacement steps, the second gas is injected from the second gas injection unit. In this case, a flow of the second gas is formed above the substrate so as to spread in a plane in a direction parallel to the upper surface of the substrate. This prevents particles scattered above the second gas injection unit from falling onto the substrate. Therefore, the deterioration of the cleanliness of the substrate after drying is suppressed.

[0147] (Item 12) The substrate processing method according to item 12, A substrate processing method for removing a residual liquid remaining on a substrate after a pattern is formed thereon by using a nozzle device, the method comprising the steps of: the nozzle device has a liquid ejection unit, a first gas ejection unit and a second gas ejection unit, the liquid discharge portion is configured to discharge the processing liquid supplied to the nozzle device downward when the nozzle device is in one position; the first gas ejection section is configured to eject a first gas supplied to the nozzle device downward when the nozzle device is in the one position; the second gas ejection unit is formed to eject the second gas supplied to the nozzle device radially toward an outer circumferential edge of the substrate in a plan view when the nozzle device is in the one attitude and is disposed in a space above the substrate held by a substrate holding unit, the treatment liquid has a lower surface tension than the residual liquid; The substrate processing method includes: rotating the substrate held by the substrate holder around an axis extending in a vertical direction while holding the substrate; a first liquid replacement step of disposing the nozzle device in the one attitude at an upper position a predetermined distance above the substrate so that the liquid ejection part faces a center of the substrate while the residual liquid is present on the substrate held by the substrate holding part; a second liquid replacement step of moving the nozzle device at the upper position from the center of the substrate toward the outer circumferential edge while supplying the processing liquid to the nozzle device to discharge the processing liquid from the liquid discharge part after the first liquid replacement step; and a gas replacement step of, after the second liquid replacement step, disposing the nozzle device above the substrate with the processing liquid on the substrate, and supplying the second gas to the nozzle device to spray the second gas from the second gas injection section, while supplying the first gas to the nozzle device to spray the first gas from the first gas injection section onto the substrate.

[0148] In substrate processing in which a processing liquid is supplied to a rotating substrate, a processing cup is used to catch the processing liquid splashed from the substrate. When the processing cup is in use, the processing cup is held at a height position approximately equal to that of the substrate, in a state in close proximity to the outer peripheral edge of the substrate. Therefore, if the nozzle device is located in close proximity to the substrate, there is a possibility that the processing cup and the nozzle device will interfere with each other.

[0149] In the substrate processing method, a first liquid replacement step places the nozzle device at an upper position, and the liquid discharger faces the center of the substrate. Then, a second liquid replacement step causes the liquid discharger to discharge processing liquid onto the substrate. The nozzle device also moves from the center of the substrate toward the outer peripheral edge of the substrate. In this case, the nozzle device is held at a height position spaced apart from the substrate, compared to when the nozzle device is located at a position lower than the upper position. Therefore, when the nozzle device moves from the center of the substrate toward the outer peripheral edge, the nozzle device and the processing cup are less likely to interfere with each other.

[0150] Furthermore, on the substrate after the pattern formation, a large number of grooves having a depth in a direction perpendicular to the upper surface of the substrate are formed. According to the above configuration, the second liquid replacement step is performed, so that the processing liquid can be discharged in a direction perpendicular to the substrate over a wide range of the upper surface of the substrate. At this time, the processing liquid is discharged from an upper position, and thus collides with the surface of the substrate with higher energy than when the processing liquid is discharged from a position lower than the upper position. Therefore, the residual liquid remaining inside the grooves on the substrate is efficiently replaced by the processing liquid. Therefore, the residual liquid remaining inside the grooves is smoothly removed.

[0151] After the second liquid replacement step, the processing liquid on the substrate is replaced with the first gas in the gas replacement step, and the substrate is dried. During this drying, the processing liquid removed from the substrate has a lower surface tension than the remaining liquid, so that the pattern formed on the substrate is less likely to be damaged due to the surface tension of the processing liquid. As a result, the residual liquid remaining on the substrate after the pattern formation can be appropriately removed from the substrate.

[0152] Furthermore, during the gas replacement step, the second gas is injected from the second gas injection unit. In this case, a flow of the second gas is formed above the substrate so as to spread in a plane in a direction parallel to the upper surface of the substrate. This prevents particles scattered above the second gas injection unit from falling onto the substrate. Therefore, the deterioration of the cleanliness of the substrate after drying is suppressed.

[0153] According to the substrate processing apparatus and the substrate processing method of the above embodiment, the residual liquid can be efficiently removed when drying the substrate. Therefore, the wasteful consumption of the processing liquid is suppressed, and it is not necessary to prepare a large amount of the processing liquid. Therefore, it is possible to contribute to the reduction of the pollution of the global environment caused by the processing liquid. [Explanation of symbols]

[0154] 1...substrate processing apparatus, 20...substrate holding device, 21...substrate holding section, 21a...spin base, 21b...holding pin, 22...rotation drive section, 30...cup device, 30A...outer cup, 30B...inner cup, 31...cup drive section, 39...drainage device, 39A...outer container, 39B...inner container, 40...chemical liquid supply device, 41...chemical liquid nozzle, 50...rinsing liquid supply system, 51...rinsing liquid nozzle, 60...substitution liquid supply system, 61...substitution liquid piping, 62...substitution liquid outlet, 63...substitution liquid supply source, 64...substitution liquid temperature adjustment section, 70...first gas supply system, 71...first gas piping, 72...first gas injection port, 80...second gas supply system, 81...second gas piping, 90...third gas supply system, 91...third Gas piping, 100... nozzle device, 101... nozzle main body, 102, 103... through hole, 110... upper surface, 120... lower surface, 130... outer circumferential surface, 131... second gas nozzle, 132... third gas nozzle, 141... gas flow path, 142... gas flow path, 150... nozzle moving device, 151... horizontal drive device, 152... vertical drive device, 153... base, 154... support shaft, 155... arm, 200... control unit, 201... CPU, 202... RAM, 203... ROM, 204... storage device, 209... CD-ROM, CH... chamber, F23... gas flow, HP... nozzle upper position, L1... chemical solution, L2... rinsing solution, L3... replacement solution, LP... nozzle lower position, W... substrate, WC... center

Claims

1. 1. A substrate processing apparatus for removing a residual liquid remaining on a substrate after a pattern is formed thereon, comprising: a substrate holder that holds the substrate and rotates it around an axis extending in a vertical direction; a nozzle device having a liquid ejection section, a first gas ejection section and a second gas ejection section; a fluid supply system that supplies a processing liquid having a surface tension lower than that of the residual liquid, a first gas, and a second gas to the nozzle device; a relative movement device that moves the nozzle device in one attitude relative to the substrate between an upper position that is a predetermined distance above the substrate held by the substrate holding unit and a lower position that is below the upper position and above the substrate, and moves the nozzle device in the one attitude relatively in a horizontal direction with respect to the substrate; A control unit. the liquid discharge portion is configured to discharge the processing liquid supplied from the fluid supply system downward when the nozzle device is in the one position, the first gas ejection unit is configured to eject the first gas supplied from the fluid supply system downward when the nozzle device is in the one position, the second gas ejection unit is formed to eject the second gas supplied from the fluid supply system radially toward an outer circumferential edge of the substrate in a plan view when the nozzle device is in the one attitude and is disposed in a space above the substrate held by the substrate holding unit, The control unit is controlling the substrate holding unit so that the substrate held by the substrate holding unit rotates; performing liquid replacement control for controlling the fluid supply system and the relative movement device so that the processing liquid is discharged from the liquid discharge unit of the nozzle device onto the substrate in a state in which the residual liquid remains on the substrate held by the substrate holding unit; performing a first gas replacement control for controlling the relative movement device such that, after the liquid replacement control, the nozzle device is located at the upper position and the first gas ejection part faces a center of the substrate while the processing liquid is present on the substrate; performing a second gas replacement control for controlling the fluid supply system and the relative movement device such that the nozzle device descends from the upper position to the lower position while the first gas and the second gas are respectively injected from the first gas injection unit and the second gas injection unit after the first gas replacement control; The substrate processing apparatus performs a third gas replacement control to control the fluid supply system and the relative movement device so that after the second gas replacement control, the first gas and the second gas are sprayed from the first gas injection unit and the second gas injection unit, respectively, while the nozzle device, which is in the lower position, moves from the center of the substrate toward the outer circumferential end portion.

2. a processing cup that is formed to surround the substrate held by the substrate holding portion in a plan view and that receives processing liquid that splashes from the substrate when the processing liquid is supplied to the substrate held by the substrate holding portion; The substrate processing apparatus of claim 1 , wherein the upper position is a position above an upper end of the processing cup when the processing liquid is supplied to the substrate held by the substrate holding part.

3. The nozzle device further includes a third gas injection portion, the fluid supply system further supplies a third gas to the nozzle device; 3. The substrate processing apparatus of claim 2, wherein the third gas injection unit is located above the second gas injection unit and is configured to inject the third gas supplied from the fluid supply system radially toward the outer peripheral edge of the substrate in a planar view when the nozzle device is in the one posture and disposed in a space above the substrate held by the substrate holding unit.

4. The nozzle device has a cylindrical outer circumferential surface extending in a vertical direction when in the one position, Each of the second gas injection portion and the third gas injection portion includes an annular opening extending in a circumferential direction of the outer circumferential surface, The substrate processing apparatus of claim 3 , wherein at least a portion of the opening of the second gas injection section and the opening of the third gas injection section are formed to face a space above an upper end of the processing cup during the third gas replacement control.

5. The liquid replacement control includes: a first liquid replacement control for controlling the relative movement device so that the nozzle device is located at the upper position and the liquid ejection part faces a center of the substrate while the residual liquid is present on the substrate held by the substrate holding part; The substrate processing apparatus of any one of claims 1 to 4, further comprising: a second liquid replacement control that controls the fluid supply system and the relative movement device after the first liquid replacement control so that the nozzle device in the upper position moves from the center of the substrate toward the outer circumferential edge while the processing liquid is discharged from the liquid discharge section.

6. 5. The substrate processing apparatus according to claim 1, wherein the fluid supply system includes a temperature adjusting unit that adjusts a temperature of the processing liquid supplied to the nozzle device to a temperature higher than room temperature.

7. 1. A substrate processing apparatus for removing a residual liquid remaining on a substrate after a pattern is formed thereon, comprising: a substrate holder that holds the substrate and rotates it around an axis extending in a vertical direction; a nozzle device having a liquid ejection section, a first gas ejection section and a second gas ejection section; a fluid supply system that supplies a processing liquid having a surface tension lower than that of the residual liquid, a first gas, and a second gas to the nozzle device; a relative movement device that moves the nozzle device in one attitude relative to the substrate between an upper position that is a predetermined distance above the substrate held by the substrate holding unit and a lower position that is below the upper position and above the substrate, and moves the nozzle device in the one attitude relatively in a horizontal direction with respect to the substrate; A control unit. the liquid discharge portion is configured to discharge the processing liquid supplied from the fluid supply system downward when the nozzle device is in the one position, the first gas ejection unit is configured to eject the first gas supplied from the fluid supply system downward when the nozzle device is in the one position, the second gas ejection unit is formed to eject the second gas supplied from the fluid supply system radially toward an outer circumferential edge of the substrate in a plan view when the nozzle device is in the one attitude and is disposed in a space above the substrate held by the substrate holding unit, The control unit is controlling the substrate holding unit so that the substrate held by the substrate holding unit rotates; performing a first liquid replacement control for controlling the relative movement device such that the nozzle device is located at the upper position and the liquid ejection part faces the center of the substrate while the residual liquid remains on the substrate held by the substrate holding part; performing a second liquid replacement control for controlling the fluid supply system and the relative movement device such that the nozzle device at the upper position moves from the center of the substrate toward the outer circumferential edge portion while the processing liquid is being discharged from the liquid discharge portion after the first liquid replacement control; A substrate processing apparatus, comprising: a substrate holding unit that holds the substrate and the processing liquid; a substrate holding unit that holds the substrate and the processing liquid; a substrate holding unit that holds the substrate and the processing liquid; a substrate holding unit that holds the substrate and the processing liquid;

8. a processing cup that is formed to surround the substrate held by the substrate holding portion in a plan view and that receives processing liquid that splashes from the substrate when the processing liquid is supplied to the substrate held by the substrate holding portion; The substrate processing apparatus of claim 7 , wherein the upper position is a position above an upper end of the processing cup when the processing liquid is supplied to the substrate held by the substrate holding part.

9. The nozzle device further includes a third gas injection portion, the fluid supply system further supplies a third gas to the nozzle device; 9. The substrate processing apparatus of claim 8, wherein the third gas injection unit is located above the second gas injection unit and is configured to inject the third gas supplied from the fluid supply system radially toward the outer peripheral edge of the substrate in a planar view when the nozzle device is in the one posture and disposed in a space above the substrate held by the substrate holding unit.

10. The nozzle device has a cylindrical outer circumferential surface extending in a vertical direction when in the one position, Each of the second gas injection portion and the third gas injection portion includes an annular opening extending in a circumferential direction of the outer circumferential surface, The substrate processing apparatus of claim 9 , wherein at least a portion of the opening of the second gas injection section and the opening of the third gas injection section are formed to face a space above an upper end of the processing cup during the gas replacement control.

11. A substrate processing method for removing a residual liquid remaining on a substrate after a pattern is formed thereon by using a nozzle device, the method comprising the steps of: the nozzle device has a liquid ejection unit, a first gas ejection unit and a second gas ejection unit, the liquid discharge portion is formed to discharge the processing liquid supplied to the nozzle device downward when the nozzle device is in one position; the first gas ejection section is configured to eject a first gas supplied to the nozzle device downward when the nozzle device is in the one position, the second gas ejection unit is formed to eject the second gas supplied to the nozzle device radially toward an outer circumferential edge of the substrate in a plan view when the nozzle device is in the one attitude and is disposed in a space above the substrate held by a substrate holding unit, the treatment liquid has a lower surface tension than the residual liquid; The substrate processing method includes: rotating the substrate held by the substrate holder around an axis extending in a vertical direction while holding the substrate; a liquid replacement step of disposing the nozzle device above the substrate in a state where the residual liquid remains on the substrate held by the substrate holding unit, and discharging the processing liquid from the liquid discharge unit onto the substrate by supplying the processing liquid to the nozzle device; a first gas replacement step of disposing the nozzle device at an upper position a predetermined distance above the substrate so that the first gas jetting part faces a center of the substrate while the processing liquid is on the substrate after the liquid replacement step; a second gas replacement step of lowering the nozzle device to a lower position lower than the upper position and higher than the substrate while supplying the first gas and the second gas to the nozzle device so that the first gas and the second gas are respectively injected from the first gas injection unit and the second gas injection unit after the first gas replacement step; a third gas replacement step of, after the second gas replacement step, supplying the first gas and the second gas to the nozzle device to spray the first gas and the second gas from the first gas injection section and the second gas injection section, respectively, while moving the nozzle device, which is in the lower position, from the center of the substrate toward the outer circumferential end section.

12. A substrate processing method for removing a residual liquid remaining on a substrate after a pattern is formed thereon by using a nozzle device, the method comprising the steps of: the nozzle device has a liquid ejection unit, a first gas ejection unit and a second gas ejection unit, the liquid discharge portion is formed to discharge the processing liquid supplied to the nozzle device downward when the nozzle device is in one position; the first gas ejection section is configured to eject a first gas supplied to the nozzle device downward when the nozzle device is in the one position, the second gas ejection unit is formed to eject the second gas supplied to the nozzle device radially toward an outer circumferential edge of the substrate in a plan view when the nozzle device is in the one attitude and is disposed in a space above the substrate held by a substrate holding unit, the treatment liquid has a lower surface tension than the residual liquid; The substrate processing method includes: rotating the substrate held by the substrate holder around an axis extending in a vertical direction while holding the substrate; a first liquid replacement step of disposing the nozzle device in the one attitude at an upper position a predetermined distance above the substrate so that the liquid ejection part faces a center of the substrate while the residual liquid is present on the substrate held by the substrate holding part; a second liquid replacement step of moving the nozzle device at the upper position from the center of the substrate toward the outer circumferential edge while supplying the processing liquid to the nozzle device to discharge the processing liquid from the liquid discharge part after the first liquid replacement step; a gas replacement step of, after the second liquid replacement step, disposing the nozzle device above the substrate with the processing liquid on the substrate, and supplying the second gas to the nozzle device to spray the second gas from the second gas injection section, while supplying the first gas to the nozzle device to spray the first gas onto the substrate from the first gas injection section.

Images