Manufacturing method of electronic component

Abstract

To provide a manufacturing method of an electronic component, capable of reducing a thickness to which a ceramic material is applied.SOLUTION: A manufacturing method of an electronic component, contains steps of: preparing a ceramic green chip of which an internal conductive pattern in a non-sintering state is exposed to a front surface, and which is in a non-sintering state; performing a laser irradiation onto the front surface; and applying a ceramic material in the non-sintering state to the ceramic green chip after the laser irradiation. The execution of the laser irradiation contains a step of removing one part of an internal conductive pattern from an exposure end to the front surface, and forming a concave where a remaining part of the internal conductive pattern is exposed while opening it to the front surface. The application of the ceramic material contains a step of embedding the concave with the ceramic material.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present invention relates to a method for manufacturing an electronic component. [Background technology]

[0002] A known method for manufacturing electronic components includes preparing an unsintered ceramic green chip having an unsintered internal conductor pattern exposed on a surface thereof, and applying a ceramic material to the entire surface on which the internal conductor pattern is exposed (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2018-98248 A Summary of the Invention [Problem to be solved by the invention]

[0004] In the above-mentioned known method for manufacturing electronic components, a sheet-like ceramic material is applied to the entire surface of the ceramic green chip where the internal conductor pattern is exposed. The method for applying the sheet-like ceramic material tends to increase the thickness of the applied ceramic material. That is, the above-mentioned known method for manufacturing electronic components may increase the thickness to which the ceramic material is applied.

[0005] One aspect of the present invention aims to provide a method for manufacturing electronic components that can reduce the thickness to which ceramic material is applied. [Means for solving the problem]

[0006] A method for manufacturing an electronic component according to one embodiment includes preparing an unfired ceramic green chip having an unfired internal conductor pattern exposed on a surface thereof, irradiating the surface with a laser, and applying a ceramic material in an unfired state to the ceramic green chip after the laser irradiation. The laser irradiation includes removing a portion of the internal conductor pattern from an end exposed on the surface thereof to form a recess in the ceramic green chip that opens on the surface and exposes a remainder of the internal conductor pattern. The application of the ceramic material includes filling the recess with the ceramic material.

[0007] In the one aspect, a recess is formed by irradiating a laser, exposing the remaining portion of the internal conductor pattern, and the recess is filled by applying a ceramic material. When the recess is formed by irradiating a laser, the depth of the recess is adjusted by adjusting the conditions of the laser irradiation. That is, when the recess is formed by irradiating a laser, the depth of the recess can be reduced. In the one aspect, the thickness to which the ceramic material is applied depends on the depth of the recess. Therefore, in the one aspect, the thickness to which the ceramic material is applied is adjusted. From the above, in the one aspect, the thickness to which the ceramic material is applied can be reduced. Effect of the Invention

[0008] One aspect of the present invention provides a method for manufacturing electronic components that can reduce the thickness to which ceramic material is applied. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a perspective view showing an electronic component according to one embodiment. [Diagram 2] FIG. 2 is a perspective view showing the electronic component according to the present embodiment. [Diagram 3] FIG. 3 is a diagram showing a cross-sectional configuration of the electronic component according to this embodiment. [Figure 4]FIG. 4 is a flowchart showing a method for manufacturing an electronic component according to this embodiment. [Diagram 5] FIG. 5 is a perspective view showing a manufacturing process of the electronic component according to this embodiment. [Figure 6] FIG. 6 is a perspective view showing a manufacturing process of the electronic component according to this embodiment. [Figure 7] FIG. 7 is a diagram showing a cross-sectional configuration of the electronic component according to this embodiment during the manufacturing process. [Figure 8] FIG. 8 is a diagram showing a cross-sectional configuration of the electronic component according to this embodiment during the manufacturing process. [Figure 9] FIG. 9 is a diagram showing a cross-sectional configuration of an electronic component according to a modified example during a manufacturing process. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the description, the same elements or elements having the same functions will be denoted by the same reference numerals, and duplicated description will be omitted.

[0011] First, prior to the method for manufacturing an electronic component according to the present embodiment, the configuration of the electronic component manufactured by the manufacturing method will be described with reference to Figures 1 and 2. Figures 1 and 2 are perspective views showing the electronic component according to the present embodiment. As shown in FIGS. 1 and 2, the electronic component 1 includes an element body 3, a pair of external electrodes 5, a plurality of internal electrodes 7, and a plurality of internal electrodes 9.

[0012] The element body 3 has a rectangular parallelepiped shape. The rectangular parallelepiped shape includes, for example, a rectangular parallelepiped shape with chamfered corners and ridges, and a rectangular parallelepiped shape with rounded corners and ridges. The element body 3 has a pair of end faces 3a, a pair of side faces 3c, and a pair of side faces 3e. The surface of the element body 3 includes the pair of end faces 3a, the pair of side faces 3c, and the pair of side faces 3e. In this embodiment, the pair of end faces 3a face each other in the first direction D1, the pair of side faces 3c face each other in the second direction D2, and the pair of side faces 3e face each other in the third direction D3. The pair of side faces 3c and the pair of side faces 3e are adjacent to the pair of end faces 3a, respectively, and extend in the first direction D1 so as to connect the pair of end faces 3a.

[0013] The first direction D1 is the length direction of the element body 3. The second direction D2 is the width direction of the element body 3. The third direction D3 is the height direction of the element body 3. The length of the element body 3 is, for example, not less than 0.4 mm and not more than 7.5 mm. The width of the element body 3 is, for example, not less than 0.2 mm and not more than 6.3 mm. The height of the element body 3 is, for example, not less than 0.2 mm and not more than 2.8 mm. In this embodiment, the length of the element body 3 is 0.6 mm, the width of the element body 3 is 0.3 mm, and the height of the element body 3 is 0.3 mm.

[0014] The element body 3 is configured by stacking a plurality of dielectric layers. In this embodiment, the dielectric layers are stacked in a third direction D3. The element body 3 includes a plurality of stacked dielectric layers. Each dielectric layer is, for example, configured from a sintered body of a ceramic green sheet. The ceramic green sheet includes, for example, a dielectric material. The dielectric material is, for example, BaTiO 3 System: Ba(Ti,Zr)O 3 (Ba,Ca)TiO 3 Series, CaZrO 3 system, or (Ca,Sr)ZrO 3 The dielectric ceramic of the system includes dielectric layers that are integrated together to such an extent that the boundaries between the dielectric layers are not visible.

[0015] As shown in FIG. 1, a pair of external electrodes 5 are arranged on the element body 3. The pair of external electrodes 5 face each other in the first direction D1. The pair of external electrodes 5 are spaced apart from each other in the first direction D1. The external electrodes 5 are arranged at the end of the element body 3 on the end face 3a side. The external electrodes 5 are arranged on the end face 3a. The external electrodes 5 are also arranged on a pair of side faces 3c and a portion of the pair of side faces 3e. The portion of the side face 3c on which the external electrodes 5 are arranged is located closer to the end face 3a. The portion of the side face 3e on which the external electrodes 5 are arranged is located closer to the end face 3a.

[0016] A plating layer may be formed on the surface of the external electrode 5. The plating layer may have a two-layer structure. In this case, the plating layer may include a plating layer containing Ni and a plating layer containing Sn. The plating layer may be formed by, for example, electroplating. The external electrodes 5 include a conductive material. The conductive material includes, for example, Cu or Ni. The external electrodes 5 are formed, for example, by baking a conductive paste applied to the surface of the element body 3. The conductive paste for forming the external electrodes 5 includes the above-mentioned conductive material.

[0017] As shown in Fig. 2, the internal electrodes 7 and the internal electrodes 9 are arranged at different positions in the third direction D3. The internal electrodes 7 and the internal electrodes 9 are arranged alternately in the element body 3 so as to face each other at an interval in the third direction D3. The multiple internal electrodes 7, 9 face each other in the third direction D3. The multiple internal electrodes 7, 9 extend in the first direction D1 in the element body 3. The internal electrodes 7 and the internal electrodes 9 have mutually opposite polarities.

[0018] The internal electrode 7 has an end 7a and a pair of end edges 7b. The end 7a is exposed to one of the pair of end faces 3a. The pair of end edges 7b face each other in the second direction D2. The pair of end edges 7b are not exposed to the side faces 3c. The internal electrode 7 is exposed to the one end face 3a, but is not exposed to the pair of side faces 3c and the pair of side faces 3e. In this embodiment, the internal electrode 7 is exposed only to the one end face 3a.

[0019] An end 7a of the internal electrode 7 is covered by a portion of the pair of external electrodes 5 that is disposed on the end face 3a of the corresponding external electrode 5. The end 7a of the internal electrode 7 is connected to the portion of the corresponding external electrode 5 that is disposed on the end face 3a. That is, each of the multiple internal electrodes 7 is connected to the corresponding external electrode 5 at the end 7a exposed on the end face 3a. Each internal electrode 7 is electrically connected to the corresponding external electrode 5.

[0020] The internal electrode 9 has an end 9a and a pair of end edges 9b. The end 9a is exposed to the other end face 3a of the pair of end faces 3a. The pair of end edges 9b face each other in the second direction D2. The pair of end edges 9b are not exposed to the corresponding side face 3c of the pair of side faces 3c. The internal electrode 9 is exposed to the other end face 3a, but is not exposed to the pair of side faces 3c and the pair of side faces 3e. In this embodiment, the internal electrode 9 is exposed only to the other end face 3a.

[0021] An end 9a of the internal electrode 9 is covered by a portion of the pair of external electrodes 5 that is disposed on the end face 3a of the corresponding external electrode 5. The end 9a of the internal electrode 9 is connected to the portion of the corresponding external electrode 5 that is disposed on the end face 3a. That is, each of the multiple internal electrodes 9 is connected to the corresponding external electrode 5 at the end 9a exposed on the end face 3a. Each internal electrode 9 is electrically connected to the corresponding external electrode 5. In FIG. 2, the pair of external electrodes 5 are omitted in order to clearly show the ends 7a of the internal electrode 7 and the ends 9a of the internal electrode 9.

[0022] The internal electrodes 7, 9 include a conductive material. The conductive material includes, for example, Cu or Ni. The internal electrodes 7, 9 may include the same conductive material as the conductive material included in the external electrode 5. The internal electrodes 7, 9 may include a conductive material different from the conductive material included in the external electrode 5. The internal electrodes 7, 9 are configured as a sintered body of a conductive paste including the conductive material.

[0023] Next, the configuration of the element body 3 will be described in more detail with reference to Fig. 3. Fig. 3 is a diagram showing a cross-sectional configuration of an electronic component according to this embodiment. Fig. 3 is a diagram showing a cross-sectional configuration of the electronic component 1 in a cross section taken along a third direction D3. The cross section taken along the third direction D3 is obtained, for example, by cutting the element body 3 along a plane perpendicular to the first direction D1 at a position where the multiple internal electrodes 7, 9 face each other in the third direction D3.

[0024] 3, the element body 3 has a portion 31 and two portions 32. In this embodiment, the element body 3 has only the portion 31 and the two portions 32. The portion 31 and the two portions 32 are continuous. In the element body 3, the portion 31 is disposed at a position overlapping at least one of the internal electrodes 7, 9 when viewed from the third direction D3. The portion 31 includes a part of a pair of side surfaces 3e. In this embodiment, the length of the portion 31 in the first direction D1 and the length of the portion 31 in the third direction D3 are equivalent to the length of the element body 3 in the first direction D1 and the length of the portion 31 in the third direction D3. In this embodiment, the length of the portion 31 in the second direction D2 is equivalent to the length of the multiple internal electrodes 7, 9 in the second direction D2.

[0025] In the element body 3, the portion 32 is disposed at a position not overlapping with either of the multiple internal electrodes 7, 9 when viewed from the third direction D3. The portion 32 is disposed outside the portion 31 in the second direction D2. The portion 32 includes a portion of the pair of side surfaces 3e that is not included in the portion 31 and a corresponding side surface 3c of the pair of side surfaces 3c. The length of the portion 32 in the second direction D2 is, for example, not less than 1.0 μm and not more than 30 μm. In this embodiment, the length of the portion 32 in the second direction D2 is 3.0 μm. The lengths of the two portions 32 in the second direction D2 may be equal to each other or may be different from each other.

[0026] Next, a method for manufacturing an electronic component according to this embodiment will be described with reference to Fig. 4 to Fig. 8. Fig. 4 is a flowchart showing the method for manufacturing an electronic component according to this embodiment. Figs. 5 and 6 are perspective views showing the manufacturing process of an electronic component according to this embodiment. Figs. 7 and 8 are views showing cross-sectional configurations of an electronic component according to this embodiment in the manufacturing process.

[0027] First, the ceramic green chip 30 is prepared (step S1). The ceramic green chip 30 prepared in step S1 is in an unfired state. The ceramic green chip 30 is prepared, for example, through the process described below.

[0028] First, a ceramic green sheet is prepared. In this manufacturing method, for example, a ceramic paste for forming a dielectric layer is applied in a sheet shape onto a carrier sheet, and then the sheet-shaped ceramic paste is dried. This results in a ceramic green sheet. The ceramic green sheet obtained by this manufacturing method has a thickness of, for example, 0.7 μm or more and 5.0 μm or less. The carrier sheet is made of, for example, PET (Polyethylene terephthalate). The ceramic paste is applied by, for example, a doctor blade method.

[0029] Next, an internal conductor pattern is formed on the ceramic green sheet. In this manufacturing method, a plurality of internal electrode patterns 70, 90 are formed on the ceramic green sheet as the internal conductor pattern using an internal electrode paste for forming a plurality of internal electrodes 7, 9. That is, the internal conductor pattern includes the internal electrode patterns 70, 90. In this manufacturing method, for example, the internal electrode paste is patterned and applied on the ceramic green sheet, and then the internal electrode paste is dried. In this way, a plurality of internal electrode patterns 70, 90 are obtained. The internal electrode paste is applied by, for example, a screen printing method.

[0030] Next, a laminate is formed from the ceramic green sheets on which the internal electrode patterns 70, 90 are formed and the ceramic green sheets on which the internal electrode patterns 70, 90 are not formed. In this manufacturing method, a plurality of ceramic green sheets are laminated such that the ceramic green sheets on which the internal electrode patterns 70, 90 are not formed are the outermost layers in the lamination direction. Thereafter, the laminated ceramic green sheets are pressed, for example, from the third direction D3 to obtain a laminate. Next, a ceramic green chip 30 is obtained from the laminate. In this manufacturing method, a plurality of ceramic green chips 30 are obtained by cutting the laminate into ceramic green chips 30 each having a predetermined size.

[0031] The ceramic paste includes, for example, the raw powder of the dielectric material described above and an organic vehicle. The organic vehicle includes a binder and a solvent. The solvent includes, for example, an organic solvent. The ceramic paste may include a dispersant, a plasticizer, or a dielectric. Ceramic pastes are known in the art and will not be described in further detail. The internal electrode paste includes, for example, the above-mentioned conductive material powder and an organic vehicle. The conductive material powder includes, for example, a metal powder. The organic vehicle includes a binder and a solvent. The solvent includes, for example, an organic solvent. The internal electrode paste may include an inorganic compound. The internal electrode paste may include a plasticizer. The internal electrode paste is known in the art, and will not be described in further detail.

[0032] The ceramic green chip 30 prepared through the above-mentioned process has a pair of end faces 30a, a pair of side faces 30c, and a pair of side faces 30e. The surface of the ceramic green chip 30 includes a pair of end faces 30a, a pair of side faces 30c, and a pair of side faces 30e. In this manufacturing method, the pair of end faces 30a face each other in a first direction D1, the pair of side faces 30c face each other in a second direction D2, and the pair of side faces 30e face each other in a third direction D3. The pair of side faces 30c and the pair of side faces 30e are adjacent to the pair of end faces 30a, respectively, and extend in the first direction D1 so as to connect the pair of end faces 30a.

[0033] The first direction D1 is the length direction of the ceramic green chip 30. The second direction D2 is the width direction of the ceramic green chip 30. The third direction D3 is the height direction of the ceramic green chip 30. The length of the ceramic green chip 30 is, for example, 0.5 mm or more and 9.8 mm or less. The width of the ceramic green chip 30 is, for example, 0.2 mm or more and 8.2 mm or less. The height of the ceramic green chip 30 is, for example, 0.2 mm or more and 3.7 mm or less. In this embodiment, the length of the ceramic green chip 30 is 0.8 mm, the width of the ceramic green chip 30 is 0.4 mm, and the height of the ceramic green chip 30 is 0.4 mm.

[0034] As shown in Fig. 5, in the ceramic green chip 30 prepared in step S1, the internal electrode patterns 70 and the internal electrode patterns 90 are arranged at different positions in the third direction D3. The internal electrode patterns 70 and the internal electrode patterns 90 are arranged alternately in the ceramic green chip 30 so as to face each other at intervals in the third direction D3. The multiple internal electrode patterns 70, 90 face each other in the third direction D3. The multiple internal electrode patterns 70, 90 extend in the ceramic green chip 30 in a direction in which a pair of end faces 30a face each other. That is, the multiple internal electrode patterns 70, 90 extend in the first direction D1 in the ceramic green chip 30.

[0035] The internal electrode pattern 70 has an end 70a and a pair of end edges 70b. The end 70a is exposed to one end face 30a of the pair of end faces 30a. The end 70a is an end exposed to the one end face 30a. The pair of end edges 70b face each other in the second direction D2. The pair of end edges 70b are exposed to corresponding side faces 30c of the pair of side faces 30c. The pair of end edges 70b are ends exposed to the side faces 30c. That is, the internal electrode pattern 70 is exposed on the surface of the ceramic green chip 30. In this manufacturing method, the internal electrode pattern 70 is exposed to the one end face 30a and the pair of side faces 30c of the surface of the ceramic green chip 30. The internal electrode pattern 70 is not exposed to the pair of side faces 30e.

[0036] The internal electrode pattern 90 has an end 90a and a pair of end edges 90b. The end 90a is exposed to the other end face 30a of the pair of end faces 30a. The end 90a is an end exposed to the other end face 30a. The pair of end edges 90b face each other in the second direction D2. The pair of end edges 90b are exposed to the corresponding side faces 30c of the pair of side faces 30c. The pair of end edges 90b are ends exposed to the side faces 30c. That is, the internal electrode pattern 90 is exposed to the surface of the ceramic green chip 30. In this manufacturing method, the internal electrode pattern 90 is exposed to the other end face 30a and the pair of side faces 30c of the surface of the ceramic green chip 30. The internal electrode pattern 90 is not exposed to the pair of side faces 30e.

[0037] Next, the surface of the ceramic green chip 30 on which the internal electrode patterns 70, 90 are exposed is irradiated with a laser (step S2). In this manufacturing method, as shown in Fig. 6, a pair of side surfaces 30c of the surface on which the internal electrode patterns 70, 90 are exposed are irradiated with a laser. In this manufacturing method, the pair of end faces 30a are not irradiated with a laser. The laser irradiation is performed by a laser irradiation device 100. The laser irradiation device 100 has a laser light source (not shown) and irradiates laser light L from the laser light source forward.

[0038] In step S2, the side surface 30c is irradiated with a laser to remove a portion of the internal electrode pattern 70 from the edge 70b, which is the end exposed to the side surface 30c. Similarly, in step S2, the side surface 30c is irradiated with a laser to remove a portion of the internal electrode pattern 90 from the edge 90b, which is the end exposed to the side surface 30c. By removing the portion of the internal electrode pattern 70, a new edge 70c located on the inner side of the edge 70b in the second direction D2 is formed in the internal electrode pattern 70. By removing the portion of the internal electrode pattern 90, a new edge 90c located on the inner side of the edge 90b in the second direction D2 is formed in the internal electrode pattern 90.

[0039] In step S2, as described above, the above-mentioned parts of the internal electrode patterns 70, 90 are removed from the exposed ends on the side surfaces 30c, thereby forming recesses H opening on the side surfaces 30c in the ceramic green chip 30 as shown in FIG. In this manufacturing method, the recesses H are formed by scanning the laser irradiation device 100 in the first direction D1 along the edges 70b, 90b exposed on the side surfaces 30c. At this time, the number of times the laser irradiation device 100 is scanned may be one or more times. In step S2, only the above-mentioned parts of the internal electrode patterns 70, 90 may be removed by performing laser irradiation, or in addition to the above-mentioned parts of the internal electrode patterns 70, 90, a part of the side surface 30c of the ceramic green chip 30 may be removed.

[0040] The recesses H are formed on the side surface 30c at positions overlapping the internal electrode patterns 70, 90 when viewed from the first direction D1. In this manufacturing method, the number of recesses H corresponding to the number of the internal electrode patterns 70, 90 are formed on each of the side surfaces 30c. That is, in this manufacturing method, a plurality of recesses H are formed by performing laser irradiation. In the recesses H, the corresponding edges 70c, 90c of the edges 70c of the internal electrode patterns 70 and the edges 90c of the internal electrode patterns 90 are exposed. In this manufacturing method, the edges 70c, 90c are exposed at the bottom of the corresponding recesses H. That is, the edges 70c, 90c define the bottom of the corresponding recesses H. The edges 70c, 90c may define the inner wall surfaces of the recesses H. The edge 70c is a remaining portion of the internal electrode pattern 70, a portion of which has been removed by the above-mentioned laser irradiation. The edge 90c is a remaining portion of the internal electrode pattern 90, a portion of which has been removed by the above-mentioned laser irradiation.

[0041] In this manufacturing method, each depression H is formed to extend in the first direction D1 along the corresponding edge 70c, 90c. The depression H is recessed in the second direction D2 from the side surface 30c toward the inside of the ceramic green chip 30. The second direction D2 is the depth direction of the depression H. The depression H has a depth of, for example, 1.0 μm or more and 30 μm or less. In this manufacturing method, the depression H has a depth of 3.0 μm. When multiple depressions H are formed in the ceramic green chip 30, the depths of the depressions H may be equal to each other or may be different from each other. The depth of the depression H may be constant or may vary within one depression H. The ratio of the depth of the depression H to the thickness of the ceramic green sheet prepared in step S1 is, for example, 100% or more and 1500% or less. In this manufacturing method, the ratio of the depth of the recess H to the thickness of the ceramic green sheet prepared in step S1 is 300%.

[0042] The laser irradiation device 100 that irradiates the surface of the ceramic green chip 30 with the laser light L is, for example, a rare earth fiber laser. For example, the laser is a mode-locked pulsed laser, and the laser light L is a pulsed laser light. When the laser light L is a pulsed laser light, the laser light L is, for example, a pulsed laser light having a wavelength of 250 nm or more and 1600 nm or less. When the laser light L is a pulsed laser light, the laser light L is, for example, a pulsed laser light having a pulse width of 10 ps or less. When the laser light L is a pulsed laser light, the laser light L is, for example, a pulsed laser light having a pulse energy of 0.1 μJ or more and 3.0 μJ or less.

[0043] The depth of the dents formed in step S2 is adjusted by adjusting the conditions of the laser irradiation. For example, the depth of the dents increases by increasing the pulse energy of the laser light L, and decreases the pulse energy. Alternatively, the depth of the dents increases by extending the irradiation time of the laser light L on the surface of the ceramic green chip 30, and decreases by shortening the irradiation time.

[0044] Next, the ceramic material M1 is applied to the ceramic green chip 30 (step S3). The ceramic material M1 applied in step S3 is in an unfired state. In this manufacturing method, the ceramic material M1 is applied to the ceramic green chip 30, for example, as follows. First, the ceramic material M1 is prepared. Next, the ceramic material M1 is applied to the recess H formed on the side surface 30c of the ceramic green chip 30. Here, the ceramic material M1 is applied to the recess H, so that the recess H is filled with the ceramic material M1. That is, the thickness to which the ceramic material M1 is applied is determined by the depth of the recess H. In this manufacturing method, as shown in FIG. 8, the ceramic material M1 is applied to the recess H, so that the entire recess H is filled with the ceramic material M1. In step S3, the ceramic material M1 may be applied to the recess H, so that only a part of the recess H is filled with the ceramic material M1.

[0045] The ceramic material M1 includes, for example, the raw powder of the dielectric material described above and an organic vehicle. The organic vehicle included in the ceramic material M1 includes, for example, a binder and a solvent. The solvent includes, for example, an organic solvent. In this manufacturing method, the ceramic material M1 is a paste-like composition in which the raw powder of the dielectric material described above and the organic vehicle are mixed. In this case, the ceramic material M1 is applied by, for example, a dipping method, a printing method, or a transfer method.

[0046] Next, the ceramic green chip 30 is fired (step S4). In this manufacturing method, the ceramic green chip 30 to which the ceramic material M1 has been applied is fired. That is, in this manufacturing method, step S4 is performed after steps S1, S2, and S3 have been performed. In this manufacturing method, the ceramic green chip 30 is fired after the binder has been removed from the ceramic green chip 30. The binder is removed, for example, by heating the ceramic green chip 30 in a reducing atmosphere. The reducing atmosphere can be, for example, air or N 2 and H 2 The firing gas includes a mixed gas of the above. For example, the firing is performed by heating the ceramic green chip 30 from which the binder has been removed under a reducing atmosphere. The binder removal and firing are known in the art, and a further detailed description thereof will be omitted.

[0047] In this manufacturing method, the "unfired state" refers to a state in which firing in step S4, i.e., main firing, has not been performed. For example, the raw material powder contained in the above-mentioned ceramic paste is obtained by pre-firing a dielectric material and then pulverizing the dielectric material. However, even if the ceramic green chip 30 is prepared after pre-firing to obtain the raw material powder, it can be said to be in an "unfired state" in step S1 in which the ceramic green chip 30 is prepared, since firing in step S4 has not been performed. Similarly, the ceramic material M1 can also be said to be in an "unfired state" in step S3 in which the ceramic material M1 is prepared, since firing in step S4 has not been performed.

[0048] By the above-mentioned firing, the ceramic green chip 30 and the applied ceramic material M1 are integrated to such an extent that the boundary between them is not recognizable, and the element body 3 having the above-mentioned configuration is obtained. The correspondence relationship between the integrated ceramic green chip 30 and ceramic material M1 and the element body 3 in this manufacturing method is shown below. A pair of end faces 30a of the ceramic green chip 30 becomes a pair of end faces 3a of the element body 3. The side faces 30c of the ceramic green chip 30 and the surface of the ceramic material M1 become a pair of side faces 3c of the element body 3. A pair of side faces 30e of the ceramic green chip 30 becomes a pair of side faces 3e of the element body 3. A portion of the ceramic green chip 30 that overlaps with at least one of the internal electrode patterns 70, 90 when viewed from the third direction D3 becomes a portion 31 of the element body 3. A portion of the ceramic green chip 30 that does not overlap with both the internal electrode patterns 70, 90 when viewed from the third direction D3 and the ceramic material M1 become a portion 32 of the element body 3.

[0049] By the above-mentioned firing, the internal electrode 7 is obtained from the internal electrode pattern 70, and the internal electrode 9 is obtained from the internal electrode pattern 90. The correspondence between the internal electrode pattern 70 and the internal electrode 7 and the correspondence between the internal electrode pattern 90 and the internal electrode 9 in this manufacturing method are shown below. The end 70a of the internal electrode pattern 70 becomes the end 7a of the internal electrode 7, and the edge 70c of the internal electrode pattern 70 becomes the edge 7b of the internal electrode 7. The end 90a of the internal electrode pattern 90 becomes the end 9a of the internal electrode 9, and the edge 90c of the internal electrode pattern 90 becomes the edge 9b of the internal electrode 9.

[0050] Next, the external electrode 5 is formed on the element body 3 (step S5). In this manufacturing method, the external electrode 5 is formed on the end face 3a so as to physically connect each of the multiple internal electrodes 7, 9 to the external electrode 5. Each of the multiple internal electrodes 7, 9 is physically connected to the external electrode 5 at a position where the end 7a of each internal electrode 7 and the end 9a of each internal electrode 9 are exposed. The formation of the external electrode 5 includes, for example, the following steps. First, a conductive paste is applied to the surface of the element body 3. Next, the applied conductive paste is baked on the element body 3. In this way, the external electrode 5 is formed. The conductive paste is applied by, for example, a dipping method, a printing method, or a transfer method. In this manufacturing method, the conductive paste is applied to five faces, namely, one end face 3a, a pair of side faces 3c, and a pair of side faces 3c. The external electrode 5 may be formed by, for example, a physical vapor deposition method (PVD method) or a chemical vapor deposition method (CVD method). Through the above-mentioned process, the electronic component 1 shown in Figs. 1 to 3 is obtained.

[0051] As described above, in the method for manufacturing an electronic component according to the present embodiment, a recess H in which the edges 70c, 90c of the internal electrode patterns 70, 90 are exposed is formed by laser irradiation, and the recess H is filled by applying the ceramic material M1. In this case, as described above, the depth of the recess H is adjusted by adjusting the conditions of the laser irradiation in step S3. That is, when the recess H is formed by laser irradiation in step S3, the depth of the recess H can be reduced. In the method for manufacturing an electronic component 1, the thickness to which the ceramic material M1 is applied depends on the depth of the recess H. Therefore, in the method for manufacturing an electronic component 1, the thickness to which the ceramic material M1 is applied is adjusted by adjusting the conditions of the laser irradiation in step S3. From the above, the method for manufacturing an electronic component 1 can reduce the thickness to which the ceramic material M1 is applied.

[0052] In the electronic component 1, the area where the internal electrodes 7 and 9 face each other is related to the upper limit of the electrical characteristics of the electronic component 1. Hereinafter, the area where the internal electrodes 7 and 9 face each other may be referred to as the "facing area of ​​the internal electrodes 7, 9". The facing area of ​​the internal electrodes 7, 9 depends on the length of the internal electrodes 7, 9 in the second direction D2. When the length of the internal electrodes 7, 9 in the second direction D2 increases, the facing area of ​​the internal electrodes 7, 9 also increases. The size of the electronic component 1 is predetermined according to a predetermined standard. Therefore, in order to increase the length of the internal electrodes 7, 9 in the second direction D2 within the predetermined size of the electronic component 1, it is necessary to keep the length of the portion 32 in the element body 3 in the second direction D2 small. As described above, the portion 32 corresponds to the portion of the ceramic green chip 30 that does not overlap both of the internal electrode patterns 70, 90 when viewed from the third direction D3, and the ceramic material M1. The manufacturing method of the electronic component 1 can reduce the thickness to which the ceramic material M1 is applied. That is, the electronic component 1 manufactured by the manufacturing method for electronic component 1 can reduce the length of portion 32 in second direction D2. For the above reasons, the manufacturing method for electronic component 1 can improve the electrical characteristics of the manufactured electronic component 1.

[0053] Next, a modified example of the method for manufacturing the electronic component 1 according to the present embodiment will be described with reference to Fig. 9. Fig. 9 is a diagram showing a cross-sectional configuration of the electronic component in the manufacturing process according to this modified example. This modified example differs from the above-described embodiment mainly in the application of the ceramic material to the ceramic green chip 30 in step S3. Below, the differences between the above-described embodiment and this modified example will be mainly described.

[0054] In this modification, the ceramic material M2 is further applied to the ceramic green chip 30 to which the ceramic material M1 has been applied. The ceramic material M2 applied in this modification is also in an unfired state, similar to the ceramic material M1. In this modification, the ceramic material M2 is applied to the ceramic green chip 30, for example, as follows. First, the ceramic material M2 is prepared. Next, the ceramic material M2 is applied onto the surface of the ceramic green chip 30. In this modification, the ceramic material M2 is applied to the ceramic material M1 applied to each side surface 30c and the recess H of the side surface 30c. In this modification, as shown in FIG. 9, the ceramic material M2 is applied so as to cover the entire side surface 30c and the entire ceramic material M1 applied to the recess H. The thickness to which the ceramic material M2 is applied is, for example, 1.0 μm or more and 30 μm or less. In this modification, the thickness to which the ceramic material M2 is applied is 10 μm. The thicknesses of the ceramic material M2 applied to each side surface 30c and the recess H of the corresponding side surface 30c may be equal to each other or may be different from each other. The thickness to which the ceramic material M2 is applied is determined by the length in the second direction D2.

[0055] Like the ceramic material M1, the ceramic material M2 also contains, for example, the raw material powder of the dielectric material described above and an organic vehicle. The organic vehicle contained in the ceramic material contains, for example, a binder and a solvent. The solvent contains, for example, an organic solvent. In this modification, the ceramic material M2 is a paste-like composition in which the raw material powder of the dielectric material described above and the organic vehicle are mixed. In this case, the ceramic material M2 is applied by, for example, a dipping method, a printing method, or a transfer method. The ceramic material M1 and the ceramic material M2 may contain the same raw material powder of the dielectric material and the organic vehicle, or may contain different raw material powders of the dielectric materials and the organic vehicle.

[0056] In step S4 in this modification, the ceramic green chip 30 to which the ceramic materials M1 and M2 are applied is fired. In this modification, the ceramic green chip 30 and the applied ceramic materials M1 and M2 are integrated to such an extent that the boundary between them cannot be recognized by the firing in step S4, and the element body 3 having the above-mentioned configuration is obtained. The correspondence relationship between the integrated ceramic green chip 30 and the ceramic materials M1 and M2 and the element body 3 in this modification is shown below. A pair of end faces 30a of the ceramic green chip 30 becomes a pair of end faces 3a of the element body 3. The surface of the ceramic material M2 becomes a pair of side faces 3c of the element body 3. A pair of side faces 30e of the ceramic green chip 30 and the edge of the ceramic material M2 in the third direction D3 become a pair of side faces 3e of the element body 3. A portion of the ceramic green chip 30 that overlaps with at least one of the internal electrode patterns 70 and 90 when viewed from the third direction D3 becomes a portion 31 of the element body 3. A portion of the ceramic green chip 30 that does not overlap either of the internal electrode patterns 70, 90 when viewed from the third direction D3 and the ceramic materials M1, M2 become the portion 32 of the element body 3.

[0057] Although the embodiment of the present invention has been described above, the present invention is not necessarily limited to the above-described embodiment, and various modifications are possible without departing from the gist of the present invention.

[0058] In the method for manufacturing electronic component 1, dent H does not have to have a depth of 1.0 μm or more and 30 μm or less. That is, in the method for manufacturing electronic component 1, dent H may have a depth smaller than 1.0 μm or larger than 30 μm. In the method for manufacturing the electronic component 1, the irradiated laser light L does not have to be a pulsed laser light. In the method for manufacturing the electronic component 1, when the irradiated laser light L is a pulsed laser light, the laser light L does not have to have a wavelength of 250 nm or more and 1600 nm or less. That is, in the method for manufacturing the electronic component 1, when the irradiated laser light L is a pulsed laser light, the laser light L may have a wavelength shorter than 250 nm or longer than 1600 nm. In the method for manufacturing the electronic component 1, when the irradiated laser light L is a pulsed laser light, the laser light L does not have to have a pulse width of 10 ps or less. That is, in the method for manufacturing the electronic component 1, when the irradiated laser light L is a pulsed laser light, the laser light L may have a pulse width greater than 10 ps. In the method for manufacturing the electronic component 1, when the irradiated laser light L is a pulsed laser light, the laser light L does not need to have pulse energy of 0.1 μJ or more and 3.0 μJ or less. That is, in the method for manufacturing the electronic component 1, when the irradiated laser light L is a pulsed laser light, the laser light L may have pulse energy less than 0.1 μJ or more than 3.0 μJ.

[0059] In the manufacturing method of the electronic component 1, the ceramic material M1 is prepared and the recess H is filled with the ceramic material M1, but the method of filling the recess H is not limited to the above-mentioned method. For example, the recess H may be filled by barrel polishing the side surface 30c of the ceramic green chip 30 on which the recess H is formed. In this case, the dried ceramic paste contained in the ceramic green sheet flows into the recess H by barrel polishing, thereby filling the recess H. Since the ceramic paste can also be considered as a ceramic material, even when the recess H is filled by barrel polishing, the recess H can be considered to be filled with the ceramic material.

[0060] In the manufacturing method of the electronic component 1, the ceramic green chip 30 is fired after the ceramic material M1 is applied, but the ceramic material M1 may be applied after the ceramic green chip 30 is fired. In this case, the ceramic material M1 is applied, for example, as follows. First, a ceramic material M1 containing a raw material powder of a glass component instead of a raw material powder of a dielectric material is prepared. The ceramic material M1 is a paste-like composition in which the raw material powder of the glass component and an organic vehicle are mixed. The glass component is, for example, SiO 2 , BaO, B 2 O 3 , Al 2 O 3 , or CaO. Next, the depressions H are filled with a ceramic material M1. In this case, the ceramic material M1 is applied by, for example, a dipping method, a printing method, or a transfer method. Next, the applied ceramic material M1 is fired. By this firing, the applied ceramic material M1 and the ceramic green chip 30 are integrated to such an extent that the boundary between them becomes unrecognizable, and the element body 3 having the above-mentioned configuration is obtained.

[0061] When the application of the ceramic material M1 is performed after the ceramic green chip 30 is fired, the application of the ceramic material M2 may be further performed after the application of the ceramic material M1. In this case, the ceramic material M2 is applied to the ceramic material M1 applied to each side surface 30c and the corresponding recess H of the side surface 30c. Here, the ceramic material M2 is applied so as to cover the entire side surface 30c and the entire ceramic material M1 applied to the recess H. In this case, the ceramic material M2 is applied by, for example, a dipping method, a printing method, or a transfer method. Next, the applied ceramic materials M1 and M2 are fired. By this firing, the applied ceramic materials M1 and M2 and the ceramic green chip 30 are integrated to such an extent that the boundary between them is not recognizable, and the element body 3 having the above-mentioned configuration is obtained.

[0062] As will be understood from the description of the above embodiments, the present specification includes disclosure of the following aspects. (Appendix 1) preparing an unfired ceramic green chip having an unfired internal conductor pattern exposed on a surface thereof; irradiating the surface with a laser; and applying a ceramic material in an unfired state to the ceramic green chip after the laser irradiation. The step of irradiating with a laser includes removing a portion of the internal conductor pattern from an end exposed to the surface, and forming a recess in the ceramic green chip, the recess opening to the surface and exposing a remainder of the internal conductor pattern; The method for manufacturing an electronic component, wherein applying the ceramic material includes filling the recess with the ceramic material. (Appendix 2) 2. The method for manufacturing an electronic component described in claim 1, wherein forming the recess includes forming a recess having a depth of 1.0 μm or more and 30 μm or less. (Appendix 3) 3. The method for producing an electronic component according to claim 1 or 2, wherein applying the ceramic material further comprises applying the ceramic material onto the surface. (Appendix 4) 4. The method for producing an electronic component according to any one of claims 1 to 3, wherein the laser irradiation includes irradiating a pulsed laser beam. (Appendix 5) 5. The method for manufacturing an electronic component according to claim 4, wherein the irradiating of the pulsed laser light includes irradiating a pulsed laser light having a wavelength of 250 nm or more and 1600 nm or less. (Appendix 6) 6. The method for producing an electronic component according to claim 4 or 5, wherein the irradiating of the pulsed laser light includes irradiating a pulsed laser light having a pulse width of 10 ps or less. (Appendix 7) 7. The method for producing an electronic component according to any one of claims 4 to 6, wherein the irradiating of the pulsed laser light includes irradiating a pulsed laser light having a pulse energy of 0.1 μJ or more and 3.0 μJ or less. [Explanation of symbols]

[0063] 1...electronic component, 30...ceramic green chip, H...dent, M1, M2...ceramic material.

Claims

1. preparing an unfired ceramic green chip having an unfired internal conductor pattern exposed on a surface thereof; irradiating the surface with a laser; and applying a ceramic material in an unfired state to the ceramic green chip after the laser irradiation. The step of irradiating with a laser includes removing a portion of the internal conductor pattern from an end exposed to the surface, and forming a recess in the ceramic green chip, the recess opening to the surface and exposing a remainder of the internal conductor pattern; The method for manufacturing an electronic component, wherein applying the ceramic material includes filling the recess with the ceramic material.

2. The method for manufacturing an electronic component according to claim 1 , wherein forming the recess includes forming a recess having a depth of 1.0 μm or more and 30 μm or less.

3. The method of claim 1 , wherein applying the ceramic material further comprises applying the ceramic material onto the surface.

4. 4. The method for manufacturing an electronic component according to claim 1, wherein the laser irradiation includes irradiating a pulsed laser beam.

5. The method for producing an electronic component according to claim 4 , wherein the irradiating with the pulsed laser light includes irradiating with a pulsed laser light having a wavelength of 250 nm or more and 1600 nm or less.

6. The method for manufacturing an electronic component according to claim 4 , wherein the irradiating with pulsed laser light includes irradiating with pulsed laser light having a pulse width of 10 ps or less.

7. The method for producing an electronic component according to claim 4 , wherein the irradiating with the pulsed laser light includes irradiating with a pulsed laser light having a pulse energy of 0.1 μJ or more and 3.0 μJ or less.

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