Method for manufacturing semiconductor device, and semiconductor device

Abstract

To provide a method for manufacturing a semiconductor device which can surely mount a semiconductor member (semiconductor die).SOLUTION: There is provided a method for mounting on a supporting body such as a re-wiring layer in a state (face up) in which a connection terminal of a bridge die 20 is faced upward, as one example of a method for manufacturing a semiconductor device. The method forms a resin layer 23 so as to cover a plurality of terminal electrodes 22 on a semiconductor substrate 21 of a bridge die 20 with a thermosetting resin film (for example, DAF) or a thermosetting adhesive, before an adhesive layer is formed on a rear face of the bridge die. Each bridge die 20 adsorbs a whole surface of the cured resin layer 23 by a collet by vacuum, is mounted on a supporting body such as a wiring layer 12, and a semiconductor device is manufactured. The method can adsorb the whole surface 23a when the bridge die 20 is adsorbed by the collet C, and accordingly can suppress bending of the bridge die, compared to a method for adsorbing the bridge dies by only an outer edge while avoiding the terminal electrode.SELECTED DRAWING: Figure 7

Description

[Technical field]

[0001] The present disclosure relates to a method for manufacturing a semiconductor device, and a semiconductor device. [Background technology]

[0002] In recent years, with the rapid advancement of electronic devices such as AI / HPC, the size and density of semiconductor packages have increased dramatically. The package structure is not limited to surface mounting with high density, but the package structure and mounting process are becoming more complex and diverse, including inorganic (silicon) or organic interposer (Bridgedie / RDL) technology, 2.xD mounting using it, and 3D mounting (HBM / Chiplet) technology using TSV. For example, Resonac Inc., with its main base of operations at the Packaging Solutions Center, is developing next-generation semiconductor packaging process technology from the customer's (semiconductor manufacturer's) perspective, combining mounting processes and materials.

[0003] As a technique in the field of semiconductor packages, Patent Document 1 discloses a method for manufacturing a semiconductor device in which a semiconductor die is mounted face-up on a carrier and sealed, a wiring layer is formed on the sealing layer, and another semiconductor die is mounted on the wiring layer. Patent Document 2 discloses another method for manufacturing a semiconductor device. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] US Patent Application Publication No. 2021 / 0098421 [Patent Document 2] US Patent Application Publication No. 2022 / 0093526 Summary of the Invention [Problem to be solved by the invention]

[0005] In the manufacturing method described in Patent Document 1, in order to mount the semiconductor die on the support, it is possible to use a collet to suck and lift the terminal electrode side of the semiconductor die, and then mount the semiconductor die on the support. In this case, as shown in FIG. 9(a), the outer periphery of the semiconductor die 120 is sucked by the collet C1 so as to avoid the internal region where the terminal electrodes 122 (copper pillars, etc.) are provided. However, as semiconductor dies become thinner, such suction may cause the semiconductor die to bend. In particular, when a semiconductor wafer is diced into individual pieces to obtain multiple semiconductor dies, the semiconductor die is pushed up from the back side with a pin or the like when peeling the semiconductor die from the dicing tape, which may promote bending of the semiconductor die or, in some cases, cause the semiconductor die to crack. In addition, as shown in FIG. 9(b), when the semiconductor die 120 is mounted on the support after suction and pressure-bonded, the collet C1 applies a load only to the outer periphery of the semiconductor die 120, so that it is difficult to apply a load to the center part of the back side of the die, and pressure bonding may be insufficient or a gap may be formed in the center part.

[0006] An object of the present disclosure is to provide a method for manufacturing a semiconductor device that can reliably attach a semiconductor member (semiconductor die). [Means for solving the problem]

[0007] [1] One aspect of the present disclosure relates to a method for manufacturing a semiconductor device, the method for manufacturing a semiconductor device comprising the steps of: preparing a semiconductor member including a semiconductor substrate having a first surface and an opposite second surface, a plurality of terminal electrodes provided on the first surface of the semiconductor substrate, and a cured resin layer provided on the first surface so as to cover the plurality of terminal electrodes; adsorbing a surface of the cured resin layer of the semiconductor member with a holding member to lift the semiconductor member; and attaching the semiconductor member to a support.

[0008] In this method for manufacturing a semiconductor device, a hardened resin layer is provided on the first surface of the semiconductor device so as to cover the terminal electrodes. The surface of the hardened resin layer is then sucked and lifted, and the mounting is then performed. In this case, the terminal electrodes are covered with the resin layer, and the semiconductor member can be sucked and lifted by the holding member without avoiding the terminal electrodes, so that it is possible to prevent the semiconductor member (semiconductor die) from bending or cracking. In addition, since the terminal electrodes are covered with the resin layer, when the semiconductor member is mounted on the support, a load is applied to the entire semiconductor member in the planar direction, so that the semiconductor member can be reliably mounted on the support. As described above, this method for manufacturing a semiconductor device makes it possible to reliably mount the semiconductor member. Furthermore, in this method for manufacturing a semiconductor device, the portion covering the terminal electrodes is formed from the hardened resin layer, so that the manufacturing process is easy. Note that the "hardened resin layer" referred to here is sufficient if it is hardened to the extent that at least one of the sucking and the application of a load can be performed, and also includes the case where it is not completely hardened (so-called C stage).

[0009] [2] In the method for manufacturing a semiconductor device according to [1] above, the step of preparing a semiconductor member may include a step of forming a resin layer containing a curable resin composition on the first surface of the semiconductor substrate so as to cover the terminal electrodes, and a step of curing the resin layer to obtain a cured resin layer. In this case, the resin layer that protects the terminal electrodes can be easily formed.

[0010] [3] In the method for manufacturing a semiconductor device according to the above [1] or [2], the cured resin layer is preferably formed by attaching a resin film containing a curable resin composition to the first surface of the semiconductor substrate and then curing the resin film. In this case, the resin layer for protecting the terminal electrodes can be easily formed.

[0011] [4] In the method for manufacturing a semiconductor device according to the above [1] or [2], the cured resin layer may be formed by applying a liquid adhesive containing a curable resin composition to the first surface of the semiconductor substrate and then curing the liquid adhesive. In this case, the resin layer for protecting the terminal electrodes can be easily formed.

[0012] [5] In any one of the above methods for manufacturing a semiconductor device [1] to [4], the cured resin layer preferably contains an inorganic filler. In this case, the hardness (elastic modulus, etc.) of the resin layer can be improved, and bending and cracking of the semiconductor member can be further suppressed. Furthermore, the inclusion of an inorganic filler can also suppress warping of the semiconductor member including the resin layer.

[0013] [6] In the method for producing a semiconductor device according to [5] above, the content of the inorganic filler in the cured resin layer may be 30 mass% or more based on the total amount of solids contained in the resin layer before curing. In this case, warping of the semiconductor member can be more reliably suppressed.

[0014] [7] In the manufacturing method of a semiconductor device according to the above [5] or [6], the average particle size of the inorganic filler in the cured resin layer is preferably 20 μm or less. In this case, even if the terminal electrodes and their pitch of the semiconductor member are fine, the resin and filler can be inserted (filled) between the terminal electrodes, and the terminal electrodes can be reliably covered with the resin layer. In addition, the cured resin layer can be prevented from warping.

[0015] [8] In any one of the methods for manufacturing a semiconductor device according to [1] to [7] above, the elastic modulus of the cured resin layer at room temperature may be 10 MPa or more. In this case, bending and cracking of the semiconductor member can be further suppressed. In addition, when the cured resin layer is polished to expose the head of the terminal electrode, the polishing operation can be easily performed. The elastic modulus here means Young's modulus. In addition, room temperature means 25°C. Since the elastic modulus of the cured resin layer is high, the resin layer, the copper pattern, and the like can be easily ground in the subsequent steps. As described above, the cured resin layer may not be completely cured, and may be hard enough to be polished in the polishing operation.

[0016] [9] In any one of the above-mentioned [1] to [8] manufacturing methods for a semiconductor device, the step of preparing a semiconductor member preferably includes the steps of: preparing a semiconductor wafer including a semiconductor substrate, in which a first surface of the semiconductor wafer is provided with a plurality of electrodes including a plurality of terminal electrodes; forming a wafer resin layer including a curable resin composition on the first surface of the semiconductor wafer so as to cover the plurality of electrodes; curing the wafer resin layer; and obtaining a semiconductor member by dicing the semiconductor wafer. In this case, a plurality of semiconductor members can be produced at once. In addition, according to this manufacturing method, even when the semiconductor member is diced into individual pieces, the semiconductor member can be peeled off from the dicing tape without bending or cracking.

[0017]

[10] Any of the methods for manufacturing a semiconductor device [1] to [9] above may further include a step of encapsulating the semiconductor member with an encapsulant after the semiconductor member is attached to the support, to form an encapsulant layer on the support.

[0018]

[11] In the method for manufacturing a semiconductor device according to

[10] above, the average particle size of the inorganic filler contained in the encapsulant layer is preferably larger than the average particle size of the inorganic filler contained in the cured resin layer. By including a large-sized inorganic filler in the encapsulant, it is possible to reliably suppress warping of the encapsulant layer due to heat. In particular, in a large-size process, it is possible to reliably adsorb the encapsulant in high-precision processing in subsequent processes.

[0019]

[12] In the method for manufacturing a semiconductor device according to the above

[10] or

[11] , the difference between the linear expansion coefficient of the encapsulant layer and the linear expansion coefficient of the cured resin layer is preferably within 150 ppm / K. In this case, the behavior of the encapsulant layer and the resin layer becomes uniform when heat is applied to the fabricated semiconductor device, and the occurrence of problems due to heat, such as misalignment in expansion, can be reduced.

[0020]

[13] The method for manufacturing a semiconductor device according to any one of the above

[10] to

[12] may further include a step of polishing the cured resin layer together with the encapsulant layer so that the tips of the respective terminal electrodes are exposed from the cured resin layer. In this case, it becomes possible to form a fine wiring layer or the like with high accuracy on the polished surface of the encapsulant layer or the like.

[0021]

[14] In any one of the above methods for manufacturing a semiconductor device [1] to

[13] , the thickness of the cured resin layer in at least one of the lifting step and the mounting step may be 15 μm or more, or 30 μm or more. In this case, bending and cracking of the semiconductor member can be more reliably suppressed.

[0022]

[15] In any one of the above methods for manufacturing a semiconductor device [1] to

[14] , an adhesive member for attaching the semiconductor member to the support may be provided on the second surface of the semiconductor substrate. In this case, the semiconductor member can be attached to the support more reliably. In addition, the semiconductor member can be easily attached to the support.

[0023]

[16] In the method for manufacturing a semiconductor device according to

[15] above, the adhesive member may be provided on the second surface of the semiconductor substrate prior to the step of attaching the semiconductor member to the support, thereby simplifying the attachment of the semiconductor member to the support.

[0024]

[17] In the method for manufacturing a semiconductor device according to

[15] or

[16] above, the difference between the linear expansion coefficient of the cured resin layer and the linear expansion coefficient of the adhesive member may be within 150 ppm / K. In this case, the thermal expansion of the cured resin layer and the adhesive member sandwiching the semiconductor substrate is approximately the same, so that it is possible to prevent the position or parallelism of the semiconductor substrate from being impaired and to suppress warping of the mounted chip.

[0025]

[18] In any of the above methods for manufacturing a semiconductor device

[15] to

[17] , the adhesive member is preferably the same as the resin layer before hardening. In this case, the members arranged above and below the semiconductor substrate are of the same type, so that they behave in the same way even when heat or the like is applied, thereby reducing defects due to differences in behavior.

[0026]

[19] In any of the above methods for manufacturing a semiconductor device [1] to

[18] , the thickness of the cured resin layer may be between 50% and 150% of the height of the terminal electrodes. In this case, the thickness of the resin layer and the height of the terminal electrodes are approximately equal, so that the semiconductor member can be lifted and attached more reliably. The height of the terminal electrodes here means the average height of the terminal electrodes.

[0027]

[20] In any of the above methods for manufacturing a semiconductor device [1] to

[19] , it is preferable that in the lifting step, the holding member adheres to the entire surface of the cured resin layer to perform the lifting, and in the attaching step, the holding member applies a load to the entire surface of the cured resin layer to perform the attachment. In this case, it is possible to more reliably prevent the semiconductor member from bending or cracking, and to more reliably attach the semiconductor member to the support.

[0028]

[21] In any one of the methods for manufacturing a semiconductor device according to the above [1] to

[20] , the ionic impurity concentration of the cured resin layer is preferably 5 ppm or less. In this case, migration between the terminal electrodes covered with the cured resin layer can be prevented.

[0029]

[22] In any of the above methods for manufacturing a semiconductor device [1] to

[21] , the adhesive strength between the cured resin layer and the first surface of the semiconductor substrate may be 1 MPa or more. In this case, in the manufactured semiconductor device, peeling of the resin layer of the semiconductor member is prevented.

[0030]

[23] In any of the above methods for manufacturing a semiconductor device [1] to

[22] , the adhesive strength between the cured resin layer and the first surface of the semiconductor substrate is preferably 3 MPa or more. In this case, peeling of the resin layer of the semiconductor member is more reliably prevented in the manufactured semiconductor device.

[0031]

[24] The method for manufacturing a semiconductor device according to any one of [1] to

[23] above may further include a step of mounting a first semiconductor die and a second semiconductor die on the first surface side of the semiconductor member after attaching the semiconductor member to the support, and the mounting step may connect the first semiconductor die and the second semiconductor die by the semiconductor member. In this case, the semiconductor die can function as a bridge die.

[0032]

[25] In another aspect, the present disclosure relates to a semiconductor device. The semiconductor device includes a semiconductor member and a support to which the semiconductor member is attached. The semiconductor member includes a semiconductor substrate having a first surface and an opposite second surface, a plurality of terminal electrodes provided on the first surface of the semiconductor substrate, and a hardened resin layer provided on the first surface so as to cover the plurality of terminal electrodes.

[0033]

[26] The semiconductor device of

[25] above may further include an adhesive member for attaching the semiconductor member to the support, and the difference between the linear expansion coefficient of the cured resin layer and the linear expansion coefficient of the cured adhesive member is preferably within 150 ppm / K. In this case, the thermal expansion of the cured resin layer and the cured adhesive member that sandwich the semiconductor substrate is approximately the same, so that the semiconductor device can prevent the position or parallelism of the semiconductor substrate from being impaired and can suppress warping of the mounted chip.

[0034]

[27] The semiconductor device according to

[25] or

[26] above may further include an encapsulant layer for encapsulating the semiconductor member.

[0035]

[28] In the semiconductor device according to

[27] above, the inorganic filler contained in the encapsulant layer may have an average particle size larger than that of the inorganic filler contained in the cured resin layer. By including inorganic fillers having a large size in the encapsulant layer, warping of the encapsulant layer due to heat can be reliably suppressed.

[0036]

[29] In the semiconductor device of

[27] or

[28] above, the difference between the linear expansion coefficient of the encapsulant layer and the linear expansion coefficient of the cured resin layer may be within 150 ppm / K. In this case, the behavior of the encapsulant layer and the resin layer becomes uniform when heat is applied to the semiconductor device, and it is possible to reduce the occurrence of problems due to heat, such as misalignment in expansion.

[0037]

[30] Any of the semiconductor devices

[25] to

[29] above may further include a first semiconductor die and a second semiconductor die provided on the first surface side of the semiconductor substrate, and the multiple terminal electrodes of the semiconductor member may be connected to the first semiconductor die and the second semiconductor die. Effect of the Invention

[0038] According to the present disclosure, it is possible to provide a method for manufacturing a semiconductor device that allows for reliable attachment of a semiconductor member. [Brief description of the drawings]

[0039] [Figure 1] FIG. 1 is a cross-sectional view showing an example of a cross-sectional configuration of a semiconductor device according to an embodiment of the present invention. [Diagram 2] 2(a) to 2(d) are cross-sectional views illustrating a method for manufacturing the semiconductor device shown in FIG. [Diagram 3] 3(a) and 3(b) are cross-sectional views showing a method for manufacturing the semiconductor device shown in FIG. 1, illustrating a step performed after the step shown in FIG. [Figure 4] 4(a) and (b) are cross-sectional views showing a method for manufacturing the semiconductor device shown in FIG. 1, illustrating a step performed after the step shown in FIG. [Diagram 5]5(a) to 5(c) are cross-sectional views showing a method for manufacturing the semiconductor device shown in FIG. 1, illustrating steps carried out after the step shown in FIG. [Figure 6] FIGS. 6(a) and 6(b) are views for explaining the step of picking up the bridge die. [Figure 7] 7(a) to 7(e) are cross-sectional views showing a method for collectively fabricating a plurality of bridge dies using a semiconductor wafer. [Figure 8] FIG. 8 is a cross-sectional view showing a bridge die according to a modified example. [Figure 9] FIGS. 9(a) and 9(b) are diagrams for explaining the steps of picking up and crimping a bridge die in a conventional method. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0040] Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings. In the following description, the same or corresponding parts are given the same reference numerals, and duplicated descriptions will be omitted. Furthermore, unless otherwise specified, the positional relationships such as up, down, left, and right are based on the positional relationships shown in the drawings. Furthermore, the dimensional ratios of the drawings are not limited to the illustrated ratios.

[0041] In this specification, the term "layer" includes a structure having a shape formed on the entire surface as well as a structure having a shape formed on a part of the surface when observed in a plan view. In this specification, the term "process" includes not only an independent process, but also a process that cannot be clearly distinguished from other processes as long as the intended effect of the process is achieved.

[0042] In this specification, a numerical range indicated using "~" indicates a range including the numerical values ​​before and after "~" as the minimum and maximum values, respectively. In a numerical range described in stages in this specification, the upper limit or lower limit of a numerical range of a certain stage may be replaced with the upper limit or lower limit of a numerical range of another stage. In a numerical range described in this specification, the upper limit or lower limit of the numerical range may be replaced with a value shown in an example.

[0043] FIG. 1 is a diagram showing an example of a semiconductor device manufactured by a manufacturing method according to an embodiment of the present invention. As shown in FIG. 1, the semiconductor device 1 includes semiconductor dies 2a and 2b, a semiconductor die 3, a substrate 4, wiring layers 5a and 5b, encapsulant layers 6a and 6b, connection electrodes 7a and 7b, and bumps 8a and 8b. The semiconductor dies 2a and 2b (first semiconductor die and second semiconductor die) are, for example, semiconductor chips such as an LSI chip, a CMOS sensor, and a memory. The semiconductor die 3 is, for example, a bridge die or a silicon capacitor, and connects the semiconductor die 2a and the semiconductor die 2b via the connection electrode 7a. In the semiconductor device 1, the wiring layer 5a including a part (lower part) of the connection electrode 7b, the encapsulant layer 6a encapsulating the semiconductor die 3, the wiring layer 5b including a part (upper part) of the connection electrode 7b and the connection electrode 7a, and the encapsulant layer 6b encapsulating the semiconductor dies 2a and 2b are sequentially stacked on the substrate 4. The connection electrode 7b is connected to the substrate 4 via a plurality of bumps 8a. The substrate 4 is further provided with another plurality of bumps 8b for connection to an external device.

[0044] In this semiconductor device 1, the semiconductor die 3 is provided in the encapsulant layer 6a in a face-up state. The semiconductor die 3 has a semiconductor substrate 3a, a plurality of terminal electrodes 3b provided on the upper surface (first surface) of the semiconductor substrate 3a, a resin layer 3c formed on the upper surface of the semiconductor substrate 3a so as to cover the plurality of terminal electrodes 3b, and an adhesive member 3d provided on the lower surface (second surface) of the semiconductor substrate 3a. The resin layer 3c is a resin film containing a thermosetting adhesive such as a die attach film (DAF) or a liquid thermosetting adhesive, and is a cured resin layer obtained by thermally curing either of them. That is, the material constituting the resin layer 3c is in a semi-cured (B stage) state and then in a completely cured (C stage) state by a subsequent curing process. However, the resin layer 3c may be in a cured state that has not yet reached a completely cured state, as long as it does not interfere with the semiconductor device 1. The curable resin composition constituting the resin layer 3c includes a thermosetting resin, and may include at least one selected from the group consisting of an epoxy resin, a bismaleimide resin, a triazine resin, and a phenol resin. The curable resin composition may further include a curing agent, a curing accelerator, and an inorganic filler. The tips of the terminal electrodes 3b are exposed on the surface of the resin layer 3c. The terminal electrodes 3b are connected to the semiconductor dies 2a and 2b via the connection electrodes 7a. The semiconductor die 3, which is, for example, a bridge die, is an extremely thin semiconductor die, and may have a thickness of, for example, 100 μm or less, and may have a thickness of 50 μm or less. The terminal electrodes 3b of the semiconductor die 3 and their pitches are also becoming smaller, and the diameter of the terminal electrodes 3b is, for example, 10 μm to 50 μm, the terminal pitch (distance) between the terminal electrodes 3b is, for example, 5 μm to 20 μm, and the height of the terminal electrodes 3b is, for example, 20 μm to 50 μm. However, the size of the terminal electrodes 3b is not limited to these. The adhesive member 3d is a member that adheres and fixes the semiconductor die 3 to the wiring layer 5a, etc., and may be made of, for example, the same material as the resin layer 3c (for example, DAF, etc.). The adhesive member 3d may be made of a material having a linear expansion coefficient equivalent to that of the material (cured product) constituting the resin layer 3c. For example, the difference between the linear expansion coefficient of the cured resin layer 3c and the linear expansion coefficient of the cured adhesive member 3d is preferably within 150 ppm / K.The adhesive member 3d may have a thickness equal to, greater than, or less than the thickness of the resin layer 3c. Similarly, the difference between the linear expansion coefficient of the sealing material layer 6a and the linear expansion coefficient of the cured resin layer 3c may be within 150 ppm / K. The sealing material layer 6a may contain an inorganic filler, and the average particle size of the inorganic filler contained in the sealing material layer 6a may be larger than the average particle size of the inorganic filler contained in the cured resin layer 3c.

[0045] Next, an example of a method for manufacturing the semiconductor device 1 will be described with reference to FIG. 2 to FIG. 5. FIG. 2 to FIG. 5 are cross-sectional views sequentially illustrating a method for manufacturing the semiconductor device 1 described above. In this method for manufacturing the semiconductor device, as shown in FIG. 2(a), first, a temporary fixing layer 11 is formed on a carrier substrate 10. The carrier substrate 10 is, for example, a glass substrate. The temporary fixing layer 11 is, for example, a curable adhesive layer, and is configured to be peeled off together with the carrier substrate 10 by light, heat, or the like in a process described later. After the temporary fixing layer 11 is formed, a wiring layer 12 is formed on the temporary fixing layer 11. The wiring layer 12 is configured to include a plurality of connection electrodes 13 and an insulating portion. The wiring layer 12 is, for example, a redistribution layer (RDL). Each of the connection electrodes 13 is, for example, made of a copper pillar, and is formed so that an upper half of the connection electrodes 13 protrudes from the surface of the insulating portion. The connection electrodes 13 are electrodes connected to semiconductor dies 25 and 26 described later (see FIG. 3(b)), and are formed on the outer or outer periphery side in the planar direction of the wiring layer 12. In the method for manufacturing a semiconductor device shown in FIG. 1, the connection electrode 13 is not formed on the inner side or central portion in the planar direction of the wiring layer 12, but may be formed thereon.

[0046] 2(b) and 6, a semiconductor die 20 (semiconductor member) is prepared. The semiconductor die 20 includes a semiconductor substrate 21, a plurality of terminal electrodes 22, a resin layer 23 (cured resin layer), and an adhesive member 24. The semiconductor substrate 21 includes an upper surface 21a (first surface) and an opposite lower surface 21b (second surface). The plurality of terminal electrodes 22 are, for example, copper pillars provided on the upper surface 21a of the semiconductor substrate 21, and are connected to wiring (not shown) in the semiconductor substrate 21. The diameter of each terminal electrode 22 is, for example, 10 μm to 50 μm, the terminal pitch (separation distance) between the terminal electrodes 3b is, for example, 5 μm to 20 μm, and the height of the terminal electrodes 3b is, for example, 20 μm to 50 μm. However, the size of the terminal electrodes 22 is not limited to these. The adhesive member 24 is a member for attaching and fixing the semiconductor die 20 to a support such as the wiring layer 12, and is composed of, for example, a film member including a thermosetting adhesive such as a die attach film (DAF). At this stage, the adhesive member 24 is not cured, and will be thermally cured in a process described later.

[0047] In the semiconductor die 20, a resin layer 23 is provided on the upper surface 21a of the semiconductor substrate 21 so as to cover the multiple terminal electrodes 22. Such a resin layer 23 can be formed, for example, by attaching a resin film made of a thermosetting adhesive (curable resin composition) to the upper surface 21a of the semiconductor substrate 21 and then thermally curing the resin film. In this case, a DAF similar to the adhesive member 24 can be used. The resin layer 23 may be formed so as to cover the entire terminal electrodes 22, or may be formed so that the tips of the terminal electrodes 22 are exposed from the surface of the resin layer 23. The resin layer 23 may be formed by applying a liquid adhesive containing a thermosetting adhesive (curable resin composition) similar to the resin film to the upper surface 21a of the semiconductor substrate 21 and then curing the liquid adhesive. It is sufficient for the resin layer 23 to be cured to an extent that it can be subjected to at least one of adsorption and application of a load, and further to polishing, which will be described later, and may not be completely cured (so-called C stage). However, it may be completely cured. The thickness of the resin layer 23 may be, for example, 50 μm or less, 20 μm or less, 10 μm or less, 9 μm or less, 8 μm or less, or 7 μm or less, or 1 μm or more, 2 μm or more, 3 μm or more, 4 μm or more, 5 μm or more, or 10 μm or more. The thickness of the resin layer 23 may be between 50% and 150% or between 80% and 120% of the height of the plurality of terminal electrodes 22, and is preferably the same thickness as the height of the terminal electrodes 22. Note that the thickness of the resin layer 23 here means the thickness after curing, and the height of the plurality of terminal electrodes 22 means the average height of the plurality of terminal electrodes 22. The thickness of the resin layer 23 may be between 50% and 150% or between 80% and 120% of the height of the plurality of terminal electrodes 22 even after the resin layer 23 is polished in a process described later. In this case, the thickness of the resin layer 23 before polishing may be thicker than the thickness of the adhesive member 24.

[0048] The thermosetting adhesive constituting this film contains, for example, a high molecular weight resin component and a thermosetting component. The high molecular weight resin component may contain, for example, at least one resin selected from the group consisting of acrylic rubber, polyimide, and phenoxy resin. The high molecular weight resin component may have a reactive group such as an epoxy group. The weight average molecular weight (standard polystyrene equivalent value according to the GPC method) of the high molecular weight resin component may be 100,000 to 3,000,000. The content of the high molecular weight resin component may be 30 to 80 parts by mass with respect to 10 parts by mass of the total mass of the resin layer 23.

[0049] The thermosetting component that may be included in the resin layer 23 is a compound having a reactive group that forms a crosslinked structure by self-polymerization and / or reaction with a curing agent. The thermosetting component may include at least one selected from the group consisting of epoxy resin, bismaleimide resin, triazine resin, and phenol resin. The content of the thermosetting component may be 1 to 30 parts by mass with respect to 100 parts by mass of the resin layer 23. The thermosetting adhesive constituting the resin layer 23 may contain other components as necessary. Examples of the other components include a curing agent that reacts with the thermosetting component, a curing accelerator that promotes the reaction between the thermosetting component and the curing agent, a coupling agent (e.g., a silane coupling agent), and a filler (e.g., silica).

[0050] The resin layer 23 may contain an inorganic filler. Specific examples of the inorganic filler include glass, silica, alumina, titanium oxide, carbon black, mica, and boron nitride. Among them, silica, alumina, titanium oxide, and boron nitride are preferred from the viewpoints of handling and processability (versatility), and silica, alumina, and boron nitride are more preferred from the viewpoints of dispersibility in the resin and easy particle size control. These may be used alone or in combination of two or more. The average particle diameter of the inorganic filler contained in the resin layer 23 may be, for example, 20 μm or less or 10 μm or less, and the maximum particle diameter of the inorganic filler may be, for example, 30 μm or less. It is preferable that the average particle diameter of the inorganic filler is 5 μm or less and the maximum particle diameter of the inorganic filler is 20 μm or less. By having an average particle diameter of 10 μm or less and a maximum particle diameter of 30 μm or less, it is possible to fill the gaps between the terminals when forming the resin layer on the terminal surface, and to suppress warping after the resin layer is cured. There are no particular limitations on the lower limit of the average particle size and the lower limit of the maximum particle size of the inorganic filler, but both may be 0.001 μm or more.

[0051] The average particle size and maximum particle size of the inorganic filler can be measured, for example, by using a scanning electron microscope (SEM) to measure the particle size of about 20 inorganic fillers. The measurement method using SEM can be, for example, by preparing a sample by heat-curing (preferably at 150 to 180°C for 1 to 10 hours) a resin composition containing the inorganic filler, cutting the center of the sample, and observing the cross section with SEM. In this case, it is preferable that the probability of the presence of fillers with a particle size of 3 μm or less in the cross section is 80% or more of the total fillers.

[0052] The content of the inorganic filler contained in the resin layer 23 may be 10% by mass to 95% by mass based on the total amount of solids contained in the resin layer 23 before curing. The content of the inorganic filler contained in the resin layer 23 is preferably 20% by mass or more, more preferably 30% by mass or more, particularly preferably 40% by mass or more, and preferably 40% by mass to 95% by mass based on the total amount of solids contained in the resin layer 23 (adhesive) before curing. The elastic modulus (Young's modulus) of such a resin layer 23 may be, for example, 10 MPa or more, or 1.0 GPa or more at room temperature (25° C.). The linear expansion coefficient of the resin layer 23 at a temperature equal to or lower than the glass transition temperature may be, for example, 10 ppm / K to 200 ppm / K. The adhesive member 24 may have the same configuration as the resin layer 23, and may contain an inorganic filler as described above. In this case, the adhesive member 24 may have a modulus of elasticity of 10 MPa or more at room temperature and a linear expansion coefficient of, for example, 10 ppm / K to 200 ppm / K. Preferably, the difference between the linear expansion coefficient of the resin layer 23 and the linear expansion coefficient of the adhesive member 24 is within 150 ppm / K. The difference between the linear expansion coefficient of the resin layer 23 and the linear expansion coefficient of the adhesive member 24 may be within 150 ppm / K even after the adhesive member 24 is cured (i.e., after it has become the semiconductor device 1).

[0053] The material forming the resin layer 23 preferably has a reduced concentration of ionic impurities. Specifically, the ionic impurity concentration of the cured resin layer 23 is, for example, 5 ppm or less, may be 3 ppm or less, preferably 1 ppm or less, more preferably 0.5 ppm or less, and further preferably 0.3 ppm or less. This prevents migration between the multiple terminal electrodes 22 covered by the resin layer 23, and the resin layer 23 can ensure insulation between the terminal electrodes 22. Since the resin layer 23 remains as a component of the semiconductor device 1 to be manufactured (it is not peeled off during the manufacturing process), it is preferable that the resin layer 23 has such a migration prevention function. Examples of the ionic impurities mentioned here include sodium (Na), potassium (K), and chlorine (Cl).

[0054] Moreover, since resin layer 23 remains as a component of semiconductor device 1 to be fabricated, it is preferable that in a cured state, resin layer 23 is securely fixed to upper surface 21a of semiconductor substrate 21. Specifically, the adhesive strength between cured resin layer 23 and upper surface 21a of semiconductor substrate 21 is 1 MPa or more, and preferably 3 MPa or more.

[0055] Next, when the preparation of the semiconductor die 20 having the above-mentioned configuration is completed, as shown in (a) and (b) of FIG. 6, the entire surface 23a of the resin layer 23 of the semiconductor die 20 is vacuum-adsorbed and lifted by the collet C. The collet C is formed of an elastic material such as rubber. Then, the semiconductor die 20 is moved to a predetermined position on the wiring layer 12 by the vacuum-adsorbed collet C, and is attached and fixed to the predetermined position of the wiring layer 12 by the adhesive member 24. During this attachment, since the terminal electrodes 22 of the semiconductor die 20 are covered by the resin layer 23, the entire surface 23a of the resin layer 23 can be pressed by the collet C to fix the semiconductor die 20. This results in the state shown in (b) of FIG. 2. The semiconductor die 20 is arranged in a face-up state in which the terminal electrodes 22 face upward.

[0056] Subsequently, as shown in FIG. 2(c), when the semiconductor die 20 is mounted (attached) on the wiring layer 12, the semiconductor die 20 and the connection electrodes 13 are encapsulated with an encapsulant to form an encapsulant layer 14 on the wiring layer 12. The encapsulant layer 14 is formed containing a thermosetting resin such as an epoxy resin, and is cured by heat or the like after encapsulation. The adhesive member 24 of the semiconductor die 20 may be cured by this thermal curing. The encapsulant constituting the encapsulant layer 14 is composed of a thermosetting resin composition, and contains, for example, an epoxy resin and a curing agent. The encapsulant constituting the encapsulant layer 14 may further contain an inorganic filler, for example, a silica filler. The average particle diameter of the inorganic filler contained in the encapsulant may be, for example, 50 μm or less, 25 μm or less, 10 μm or less, or 0.01 μm or less. The encapsulant constituting the encapsulant layer 14 preferably contains an inorganic filler with a large particle size in order to suppress warping during or after the manufacture of the semiconductor device 1, and preferably contains an inorganic filler with an average particle size larger than the average particle size of the inorganic filler contained in the resin layer 23 of the semiconductor die 20. If the terminal electrodes 22 of the semiconductor die 20 are not covered by the resin layer 23, the spaces between the terminal electrodes 22 are sealed by the encapsulant layer 14, and an inorganic filler with a particle size smaller than the space between the terminal electrodes 22 is used. In this case, for example, the encapsulant resin tends to have a low elasticity, making it difficult to grind in the subsequent grinding process, or warping may occur during or after the manufacture of the semiconductor device 1. However, when the terminal electrodes 22 of the semiconductor die 20 are covered by the resin layer 23 as in this embodiment, it is not necessary to consider the filling ability between the terminal electrodes 22 in the selection of the material of the encapsulant constituting the encapsulant layer 14, and it is possible to design a flexible resin and filler taking into account warping, etc.

[0057] Subsequently, when the encapsulant layer 14 is formed, as shown in (d) of FIG. 2, the encapsulant layer 14 is polished by CMP or the like. As a result, the tip 13a of the connection electrode 13 is exposed outside the encapsulant layer 14a, and the tip 22a of the terminal electrode 22 of the semiconductor die 20 is exposed outside from the surface 23a of the resin layer 23. As a result, the encapsulant layer 14 is thinned to the encapsulant layer 14a shown in (d) of FIG. 2. The elastic modulus (Young's modulus) of such encapsulant layers 14, 14a may be, for example, 3.0 GPa or more. In addition, the linear expansion coefficient of the encapsulant layers 14, 14a may be 5 ppm / K to 150 ppm / K, and the difference with the linear expansion coefficient of the resin layer 23 may be 150 ppm / K or less, preferably 100 ppm / K or less. The polished resin layer 23 may have a thickness of 20 μm or more. When the resin layer 23 is polished as described above, the tip portion of the terminal electrode 22 may also be polished in the same manner.

[0058] Subsequently, when the encapsulant layer 14a is formed, as shown in FIG. 3(a), the wiring layer 15 is formed on the encapsulant layer 14a. The wiring layer 15 may be, for example, a redistribution layer (RDL). A plurality of connection electrodes 16 and a plurality of connection electrodes 17 are formed on the wiring layer 15. The portions of the wiring layer 15 other than the electrodes are insulating portions. The connection electrodes 16 connect an external device to semiconductor dies 25 and 26 described later, and are connected to, for example, the connection electrodes 13. The connection electrodes 17 connect the semiconductor die 20 to the semiconductor dies 25 and 26 described later. The connection electrodes 17 are respectively connected to the terminal electrodes 22 of the semiconductor die 20. Each of the connection electrodes 16 and each of the connection electrodes 17 includes, for example, a copper pillar. A known method can be used to manufacture each of the connection electrodes 16 and each of the connection electrodes 17.

[0059] Subsequently, after the wiring layer 15 is formed, the semiconductor dies 25 and 26 are mounted on the wiring layer 15 as shown in (b) of Fig. 3. The semiconductor dies 25 and 26 are, for example, semiconductor chips such as an LSI chip, a CMOS sensor, a memory, etc. During this mounting, the connection electrodes 16 are connected to the semiconductor dies 25 and 26, and the connection electrodes 17 connect the semiconductor die 20 and the semiconductor dies 25 and 26.

[0060] Next, after the semiconductor dies 25 and 26 are mounted, as shown in (a) of Fig. 4, the semiconductor dies 25 and 26 are encapsulated on the wiring layer 15 with an encapsulant to form an encapsulant layer 18 on the wiring layer 15. The encapsulant layer 18, like the encapsulant layer 14, is configured to include a thermosetting resin such as an epoxy resin, and is cured after encapsulation.

[0061] Next, the semiconductor dies 25 and 26 are encapsulated with an encapsulant to form the encapsulant layer 18, which may then be ground until the surfaces of the semiconductor dies 25 and 26 are exposed from the surface of the encapsulant layer, as shown in Fig. 4(b), thereby thinning the encapsulant layer 18 to the encapsulant layer 18a shown in Fig. 4(b).

[0062] Next, after the sealing material layer 18a is formed, the temporary fixing layer 11 is irradiated with laser light or heated, as shown in (a) of Figure 5, to reduce the adhesiveness of the temporary fixing layer 11 and peel off the carrier substrate 10 from the wiring layer 12.

[0063] Next, when the carrier substrate 10 is peeled off, as shown in Fig. 5(b), connection bumps 19 are formed on the lower ends of the connection electrodes 13 exposed from the lower surface of the wiring layer 12. Also, a substrate 35 shown in Fig. 5(c) is prepared. The substrate 35 is provided with a substrate body 36, connection bumps 37 for connecting the wiring electrodes in the substrate body 36 to the outside, an adhesive member 38, and other members 39 (for example, various electronic components).

[0064] 5(c), the semiconductor device 30 provided with the connection bumps 19 is mounted on the substrate 35. At this time, the semiconductor device 30 is adhered and fixed by the adhesive member 38 on the substrate 35. Thereafter, the adhesive member 38 is cured by heat curing or the like to produce the semiconductor device 1 shown in FIG.

[0065] Next, an example of a method for producing the semiconductor die 20 used in manufacturing the above-described semiconductor device 1 will be described with reference to FIG.

[0066] First, as shown in (a) of FIG. 7, a semiconductor wafer 41 corresponding to each semiconductor substrate 21 of the multiple semiconductor dies 20 is prepared. The semiconductor wafer 41 has multiple electrodes 42 corresponding to each semiconductor die 20. When the semiconductor wafer 41 is prepared, as shown in (b) of FIG. 7, a wafer resin layer 43 containing a curable resin composition is formed on the upper surface 41a (first surface) of the semiconductor wafer 41 so as to cover the multiple electrodes 42. The wafer resin layer 43 corresponds to the above-mentioned resin layer 23 (before curing), and is formed by attaching a resin film containing a similar thermosetting resin composition to the semiconductor wafer 41. It is to be noted that the wafer resin layer 43 may be formed by applying a liquid adhesive containing a similar thermosetting resin composition to the semiconductor wafer 41. Thereafter, as shown in (c) of FIG. 7, the wafer resin layer 43 is cured by heat or the like to form a cured wafer resin layer 43a.

[0067] Next, as shown in (d) of FIG. 7, a DAF corresponding to the adhesive member 44 described above is attached to the lower surface 41b (second surface) of the semiconductor wafer 41. Then, as shown in (e) of FIG. 7, the semiconductor wafer 41 including the hardened wafer resin layer 43a is diced by dicing D to obtain a plurality of semiconductor dies 20. Such semiconductor dies 20 can be used as bridge dies when manufacturing various semiconductor devices. The semiconductor device shown in FIG. 1 is an example using the semiconductor die 20, and is not limited thereto.

[0068] Here, the effects of the method for manufacturing a semiconductor device according to this embodiment, more specifically, the method for mounting a semiconductor die 20, will be described in comparison with the method shown in FIG. 9. In the method shown in FIG. 9, since the resin layer 23 is not provided as in the method according to this embodiment, a plurality of terminal electrodes 122 (copper pillars) on a semiconductor substrate 121 are exposed. For this reason, as shown in FIG. 9(a), a collet C1 with a protruding periphery (concave at the center) is used for suction so as to avoid the terminal electrodes 122. Since semiconductor dies are becoming thinner, such suction may cause the periphery of the semiconductor die 120 to be strongly sucked, resulting in bending of the semiconductor die 120. In particular, when a semiconductor wafer is diced to obtain a plurality of semiconductor dies 120, the semiconductor die 120 is pushed up from the back side by a pin P or the like when peeling the semiconductor die 120 from a dicing tape, which may promote bending of the semiconductor die 120 or, in some cases, may cause the semiconductor die 120 to crack. Furthermore, as shown in (b) of Figure 9, when the semiconductor die 120 is mounted on the support 110 after suction and then pressed, the load is applied only to the outer periphery (see the two arrows in the figure), which makes it difficult to apply the load to the central part of the back surface of the semiconductor die 120, which may result in insufficient pressing or the formation of a void in the central part.

[0069] In contrast, in the manufacturing method of the semiconductor device according to the present embodiment, as shown in FIG. 6, when mounting the semiconductor die 20, a hardened resin layer 23 is provided on the upper surface 21a of the semiconductor substrate 21 so as to cover the multiple terminal electrodes 22. Then, the surface 23a of the hardened resin layer 23 is sucked and lifted by the collet C, which is a holding member, and the semiconductor die 20 is prevented from bending or cracking because the multiple terminal electrodes 22 are covered with the resin layer 23 and the semiconductor die 20 is sucked and lifted by the collet C, which is a holding member, without avoiding the terminal electrodes 22. In addition, since the multiple terminal electrodes 22 are covered with the resin layer 23, when the semiconductor die 20 is attached to a support such as the wiring layer 12, a load can be applied to the entire semiconductor die 20 in the planar direction, and the semiconductor die 20 can be reliably attached to the support. As described above, according to the manufacturing method of the semiconductor device, the semiconductor die 20 can be reliably attached. Furthermore, in the manufacturing method of the semiconductor device, the portion covering the terminal electrodes 22 is formed from the hardened resin layer 23, so that the semiconductor die 20 is easily manufactured.

[0070] In the method for manufacturing a semiconductor device according to this embodiment, when preparing the semiconductor die 20, a resin layer containing a curable resin composition is formed on the upper surface 21a of the semiconductor substrate 21 so as to cover the multiple terminal electrodes 22, and the resin layer is cured to form a cured resin layer. This makes it possible to easily form the resin layer 23 that protects the multiple terminal electrodes 22.

[0071] In the method for manufacturing a semiconductor device according to this embodiment, the cured resin layer 23 is formed by attaching a resin film (e.g., DAF) containing a curable resin composition to the upper surface 21a of the semiconductor substrate 21 and then curing it. This makes it possible to easily form the resin layer 23 that protects the multiple terminal electrodes 22. Alternatively, the cured resin layer 23 may be formed by applying a liquid adhesive containing a curable resin composition to the upper surface 21a of the semiconductor substrate 21 and then curing it. In this case as well, the resin layer 23 that protects the multiple terminal electrodes 22 can be easily formed.

[0072] In the method for manufacturing a semiconductor device according to the present embodiment, the cured resin layer 23 preferably contains an inorganic filler. In this case, the hardness (elastic modulus, etc.) of the resin layer 23 can be improved, and bending and cracking of the semiconductor die 20 can be further suppressed. Furthermore, the inclusion of an inorganic filler can also suppress warping of the semiconductor die 20 including the resin layer 23. Furthermore, the inclusion of an inorganic filler makes it easier to perform a polishing process when polishing the resin layer 23.

[0073] In the method for manufacturing a semiconductor device according to this embodiment, the content of the inorganic filler in the cured resin layer 23 may be 10 mass % or more based on the total amount of solids contained in the resin layer before curing. In this case, warping of the semiconductor die 20 can be more reliably suppressed.

[0074] In the method for manufacturing a semiconductor device according to this embodiment, the average particle size of the inorganic filler in the cured resin layer 23 is preferably 20 μm or less. In this case, even if the terminal electrodes 22 and pitch of the semiconductor die 20 are miniaturized, the resin and filler can be reliably introduced between the terminal electrodes, so that the terminal electrodes can be reliably covered with the resin layer.

[0075] In the method for manufacturing a semiconductor device according to this embodiment, the elastic modulus of the cured resin layer 23 may be 10 MPa or more. In this case, bending and cracking of the semiconductor die 20 can be further suppressed. Furthermore, when polishing the cured resin layer 23 to expose the heads of the terminal electrodes 22, the polishing operation can be easily performed. Since the cured resin layer 23 has a high elastic modulus, the resin layer, the copper pattern, and the like can be easily ground.

[0076] In the manufacturing method of the semiconductor device according to the present embodiment, when preparing the semiconductor die 20, a semiconductor wafer 41 corresponding to the plurality of semiconductor substrates 21 is prepared, and then a wafer resin layer 43 containing a curable resin composition is formed on the upper surface 41a of the semiconductor wafer 41 so as to cover the plurality of electrodes 42. Then, the wafer resin layer 43 is cured. After that, the semiconductor wafer 41 is divided into individual pieces by dicing D to obtain the plurality of semiconductor dies 20. According to this method, the plurality of semiconductor dies 20 can be produced at once. Moreover, according to this manufacturing method, even when the semiconductor die 20 is divided into individual pieces by dicing, the semiconductor die 20 can be peeled off from the dicing tape without bending or cracking.

[0077] In the manufacturing method of the semiconductor device according to the present embodiment, after the semiconductor die 20 is attached to the wiring layer 12, which is a support, the semiconductor die 20 may be encapsulated with an encapsulant to form an encapsulant layer 14, 14a on the wiring layer 12. The average particle size of the inorganic filler contained in the encapsulant layer 14, 14a is preferably larger than the average particle size of the inorganic filler contained in the resin layer 23. In this way, by including a larger inorganic filler in the encapsulant, warping of the encapsulant layer 14 due to heat can be more reliably suppressed. Particularly in a large-size process, reliably adsorbing is possible in high-precision processing in the subsequent steps.

[0078] In the method for manufacturing a semiconductor device according to this embodiment, the difference between the linear expansion coefficient of the encapsulant layers 14, 14a and the linear expansion coefficient of the cured resin layer 23 is preferably within 150 ppm / K. In this case, the behavior of the encapsulant layer 14a and the resin layer 23 becomes uniform when heat is applied to the fabricated semiconductor device 1, and it is possible to reduce the occurrence of problems due to heat, such as deviation in expansion.

[0079] In the manufacturing method of the semiconductor device according to this embodiment, the hardened resin layer 23 may be polished together with the sealing material layer 14a so that the tips 22a of the respective terminal electrodes 22 are exposed from the hardened resin layer 23. This makes it possible to form a fine wiring layer 15, etc. with high accuracy on the polished surface of the sealing material layer 14, etc.

[0080] In the method for manufacturing a semiconductor device according to this embodiment, the thickness of the cured resin layer 23 may be 15 μm or more or 30 μm or more when the semiconductor die 20 is lifted or attached by the collet C. In this case, bending and cracking of the semiconductor die 20 can be more reliably suppressed.

[0081] In the method for manufacturing a semiconductor device according to this embodiment, an adhesive member 24 for attaching the semiconductor die 20 to a support such as the wiring layer 12 is provided on the lower surface 21b of the semiconductor substrate 21. This allows the semiconductor die 20 to be attached to the wiring layer 12 more reliably.

[0082] In the method for manufacturing a semiconductor device according to this embodiment, the difference between the linear expansion coefficient of the cured resin layer 23 and the linear expansion coefficient of the adhesive member 24 may be within 150 ppm / K. In this case, the thermal expansion of the cured resin layer and the adhesive member that sandwich the semiconductor substrate becomes approximately the same, so that it is possible to prevent the position or parallelism of the semiconductor substrate from being impaired and to suppress warping of the mounted chip.

[0083] In the method for manufacturing a semiconductor device according to this embodiment, the thickness of the cured resin layer 23 may be between 50% and 150%, or may be between 80% and 120%, of the height of the terminal electrodes 22. In this case, the thickness of the resin layer 23 and the height of the terminal electrodes 22 are approximately equal, so that the semiconductor die 3 can be lifted and attached more reliably.

[0084] In the method for manufacturing a semiconductor device according to this embodiment, it is preferable that the adhesive material 44 is the same material as the resin layer 23 before it is hardened. In this case, the materials arranged above and below the semiconductor substrate 21 are the same type (for example, both are DAF), so that they behave in the same way even when heat or the like is applied, and defects due to differences in behavior can be reduced.

[0085] In the method for manufacturing a semiconductor device according to this embodiment, when the semiconductor die 20 is lifted by the collet C, the collet C adheres to the entire surface 23a of the cured resin layer 23 to lift the semiconductor die 20, and when the semiconductor die 20 is attached, the collet C applies a load to the entire surface 23a of the cured resin layer 23 to attach the semiconductor die 20. This makes it possible to more reliably prevent the semiconductor die 20 from bending or cracking, and also makes it possible to more reliably attach the semiconductor die 20 to a support such as the wiring layer 12.

[0086] In the method for manufacturing a semiconductor device according to this embodiment, the ionic impurity concentration of the cured resin layer 23 is 5 ppm or less (or 3 ppm or less), which makes it possible to prevent migration between the multiple terminal electrodes 22 covered with the cured resin layer 23.

[0087] In the method for manufacturing a semiconductor device according to the present embodiment, the adhesive strength between the cured resin layer 23 and the upper surface 21a of the semiconductor substrate 21 is 1 MPa or more. This prevents the resin layer 23 of the semiconductor die 20 from peeling off in the manufactured semiconductor device 1.

[0088] Although the embodiments of the present disclosure have been described above, the present invention is not limited to the above-described embodiments, and may be appropriately modified within the scope of the present disclosure. For example, in the above-described embodiment, the semiconductor die 20 used includes the adhesive member 24 as shown in FIG. 6, but is not limited thereto. For example, as shown in FIG. 8, a semiconductor die 20A without the adhesive member 24 may be used. In this case, when mounting the semiconductor die 20A on the wiring layer 12, solder may be provided on the wiring layer 12, and a metal layer may be provided on the back surface of the semiconductor die 20 to bond them. The semiconductor die 20A may be attached to the wiring layer 12 using silver paste. In the above-described embodiment, the semiconductor die 20 is attached to the wiring layer 12, but is not limited thereto. For example, the semiconductor die 20, 20A may be directly attached on the temporary fixing layer 11 without providing the wiring layer 12. In this case, if the temporary fixing layer 11 has adhesiveness, the semiconductor die 20A may be attached as it is, or if the temporary fixing layer 11 does not have adhesiveness, the semiconductor die 20 may be attached. [Explanation of symbols]

[0089] 1...semiconductor device, 3...semiconductor die (semiconductor member), 3a...semiconductor substrate, 3b...terminal electrode, 3c...resin layer, 5a...wiring layer (support), 12...wiring layer (support), 14, 14a...encapsulating material layer, 20, 20A...semiconductor die (semiconductor member), 21...semiconductor substrate, 21a...upper surface (first surface), 21b...lower surface (second surface), 22...terminal electrode, 22a...tip, 23...resin layer, 24...adhesive member, 41...semiconductor wafer, 41a...upper surface (first surface), 41b...lower surface (second surface), 42...electrode, 43, 43a...wafer resin layer, 44...adhesive member.

Claims

1. A step of preparing a semiconductor member including a semiconductor substrate having a first surface and an opposite second surface, a plurality of terminal electrodes provided on the first surface of the semiconductor substrate, and a cured resin layer provided on the first surface so as to cover the plurality of terminal electrodes; a step of lifting up the semiconductor member by adsorbing a surface of the cured resin layer of the semiconductor member with a holding member; Attaching the semiconductor member to a support. A method for manufacturing a semiconductor device.

2. The step of preparing the semiconductor member includes a step of forming a resin layer containing a curable resin composition on the first surface of the semiconductor substrate so as to cover the plurality of terminal electrodes, and a step of curing the resin layer to obtain the cured resin layer. The method for manufacturing a semiconductor device according to claim 1 .

3. The cured resin layer is formed by attaching a resin film containing a curable resin composition to the first surface of the semiconductor substrate and then curing the resin film. The method for manufacturing a semiconductor device according to claim 1 or 2.

4. The cured resin layer is formed by applying a liquid adhesive containing a curable resin composition to the first surface of the semiconductor substrate and then curing the liquid adhesive. The method for manufacturing a semiconductor device according to claim 1 or 2.

5. The cured resin layer contains an inorganic filler. The method for manufacturing a semiconductor device according to claim 1 or 2.

6. The content of the inorganic filler is 30 mass% or more based on the total amount of solids contained in the resin layer before curing. The method for manufacturing a semiconductor device according to claim 5 .

7. The average particle size of the inorganic filler is 20 μm or less. The method for manufacturing a semiconductor device according to claim 5 .

8. The elastic modulus of the cured resin layer at room temperature is 10 MPa or more. The method for manufacturing a semiconductor device according to claim 1 or 2.

9. The step of preparing a semiconductor member includes: preparing a semiconductor wafer including the semiconductor substrate, the semiconductor wafer having a first surface provided with a plurality of electrodes including the plurality of terminal electrodes; forming a wafer resin layer including a curable resin composition on the first surface of the semiconductor wafer so as to cover the plurality of electrodes; curing the wafer resin layer; The semiconductor wafer is diced into individual pieces to obtain the semiconductor members. The method for manufacturing a semiconductor device according to claim 1 or 2.

10. The method further includes a step of encapsulating the semiconductor member with an encapsulant after the semiconductor member is attached to the support to form an encapsulant layer on the support. The method for manufacturing a semiconductor device according to claim 1 or 2.

11. The average particle size of the inorganic filler contained in the sealing material layer is larger than the average particle size of the inorganic filler contained in the cured resin layer. The method for manufacturing a semiconductor device according to claim 10.

12. The difference between the linear expansion coefficient of the sealing material layer and the linear expansion coefficient of the cured resin layer is within 150 ppm / K. The method for manufacturing a semiconductor device according to claim 10.

13. The method further includes a step of polishing the cured resin layer together with the sealing material layer so that a tip end of each of the plurality of terminal electrodes is exposed from the cured resin layer. The method for manufacturing a semiconductor device according to claim 10.

14. The thickness of the cured resin layer is 30 μm or more in at least one of the lifting step and the mounting step. The method for manufacturing a semiconductor device according to claim 1 or 2.

15. An adhesive member for attaching the semiconductor member to the support is provided on the second surface of the semiconductor substrate. The method for manufacturing a semiconductor device according to claim 1 or 2.

16. The adhesive member is provided on the second surface of the semiconductor substrate prior to the step of attaching the semiconductor member to the support. The method for manufacturing a semiconductor device according to claim 15.

17. The difference between the linear expansion coefficient of the cured resin layer and the linear expansion coefficient of the adhesive member is within 150 ppm / K. The method for manufacturing a semiconductor device according to claim 15.

18. The adhesive member is the same material as the resin layer before being cured. The method for manufacturing a semiconductor device according to claim 15.

19. the thickness of the cured resin layer is between 50% and 150% of the height of the terminal electrodes; The method for manufacturing a semiconductor device according to claim 1 or 2.

20. In the lifting step, the holding member is adsorbed to the entire surface of the cured resin layer to lift it up, In the attaching step, a load is applied to the entire surface of the cured resin layer by the holding member to perform the attachment. The method for manufacturing a semiconductor device according to claim 1 or 2.

21. The cured resin layer has an ionic impurity concentration of 5 ppm or less. The method for manufacturing a semiconductor device according to claim 1 or 2.

22. an adhesive strength between the cured resin layer and the first surface of the semiconductor substrate is 1 MPa or more; The method for manufacturing a semiconductor device according to claim 1 or 2.

23. an adhesive strength between the cured resin layer and the first surface of the semiconductor substrate is 3 MPa or more; The method for manufacturing a semiconductor device according to claim 1 or 2.

24. The method further includes the step of mounting a first semiconductor die and a second semiconductor die on the first surface side of the semiconductor member after the semiconductor member is attached to the support, In the mounting step, the first semiconductor die and the second semiconductor die are connected by the semiconductor member. The method for manufacturing a semiconductor device according to claim 1 or 2.

25. A semiconductor member including a semiconductor substrate having a first surface and a second surface on the opposite side, a plurality of terminal electrodes provided on the first surface of the semiconductor substrate, and a hardened resin layer provided on the first surface so as to cover the plurality of terminal electrodes; A support to which the semiconductor member is attached; A semiconductor device comprising:

26. An adhesive member for attaching the semiconductor member to the support is further provided, The difference between the linear expansion coefficient of the cured resin layer and the linear expansion coefficient of the cured adhesive member is within 150 ppm / K. The semiconductor device according to claim 25.

27. Further comprising an encapsulant layer that encapsulates the semiconductor member; 27. The semiconductor device according to claim 25 or 26.

28. The average particle size of the inorganic filler contained in the sealing material layer is larger than the average particle size of the inorganic filler contained in the cured resin layer.

28. The semiconductor device according to claim 27.

29. The difference between the linear expansion coefficient of the sealing material layer and the linear expansion coefficient of the cured resin layer is within 150 ppm / K.

28. The semiconductor device according to claim 27.

30. Further comprising a first semiconductor die and a second semiconductor die provided on the first surface side of the semiconductor substrate, The plurality of terminal electrodes of the semiconductor member are connected to the first semiconductor die and the second semiconductor die.

27. The semiconductor device according to claim 25 or 26.

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