High frequency module and communication apparatus

Abstract

To provide a high frequency module capable of obtaining a desired characteristic against a plurality of communication bands.SOLUTION: A high frequency module 1 comprises: a low-noise amplifier 51; a switch 40; a first inductor 18; a second inductor 19; a first filter 131; and a second filter 141. The first inductor 18 is connected to between the low-noise amplifier 51 and an output terminal 403 of the switch 40. The second inductor 19 is connected to a path between the first inductor 18 and the output terminal 403 of the switch 40 and an input and output terminal 404 of the switch 40. The switch 40 can switch between a first state where a first input terminal 401 connected to the first filter 131 and the output terminal 403 are connected, and the input and output terminal 404 and a ground terminal 400 are connected and a second state where a second input terminal 402 connected to the second filter 141 and the input and output terminal 404 are connected.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a high-frequency module and a communication device. [Background technology]

[0002] Conventionally, high-frequency circuits (high-frequency modules) that are compatible with a plurality of communication bands have been known (see, for example, Patent Document 1). The high-frequency circuit described in Patent Document 1 includes a low-noise amplifier, a first inductor, and a second inductor. In the high-frequency circuit described in Patent Document 1, a second inductor that is connected to ground is connected to a series circuit of a receiving path, a first inductor, and a low-noise amplifier. The high-frequency circuit described in Patent Document 1 is configured to be switchable between connecting a first end of the second inductor to the receiving path and connecting a second end to ground, or connecting a second end of the second inductor to the receiving path and connecting a first end to ground. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2021 / 039061 Summary of the Invention [Problem to be solved by the invention]

[0004] With the high-frequency module of Patent Document 1, it may be difficult to obtain desired characteristics in all of a plurality of communication bands.

[0005] An object of the present invention is to provide a high-frequency module and a communication device that can reduce loss of received signals and reduce leakage of transmitted signals for any of a plurality of communication bands. [Means for solving the problem]

[0006] A high-frequency module according to an aspect of the present invention includes a low-noise amplifier, a switch, a first inductor, a second inductor, a first filter, and a second filter. The switch has a first input terminal, a second input terminal, an output terminal, an input / output terminal, and a ground terminal. The first inductor is connected between the low-noise amplifier and the output terminal. The second inductor is connected between a path between the first inductor and the output terminal and the input / output terminal. The first filter is connected to the first input terminal and has a pass band including a reception band of a first communication band. The second filter is connected to the second input terminal and has a pass band including a reception band of a second communication band. The second communication band has a wider transmission / reception gap than the first communication band. The switch is switchable between a first state and a second state. In the first state, the first input terminal is connected to the output terminal, the input / output terminal is connected to the ground terminal, and the second input terminal is not connected to the input / output terminal. In the second state, the switch connects the second input terminal to the input / output terminal, does not connect the first input terminal to the output terminal, and does not connect the input / output terminal to the ground terminal.

[0007] A high-frequency module according to another aspect of the present invention includes a low-noise amplifier, a switch, a first inductor, a second inductor, a first filter, and a second filter. The switch has a first input terminal, a second input terminal, an output terminal, a first input / output terminal, a second input / output terminal, a third input / output terminal, and a ground terminal. The first inductor is connected between a path between the low-noise amplifier and the output terminal and the first input / output terminal. The second inductor is connected between the second input / output terminal and the third input / output terminal. The first filter is connected to the first input terminal and has a pass band including a reception band of a first communication band. The second filter is connected to the second input terminal and has a pass band including a reception band of a second communication band. The second communication band has a wider transmission / reception gap than the first communication band. The switch is switchable between a first state and a second state. In the first state, the switch connects the first input terminal to the first input / output terminal and the first input terminal to the third input / output terminal, connects the second input / output terminal to the ground terminal, and does not connect the second input terminal to the second input / output terminal, does not connect the third input / output terminal to the output terminal, and does not connect the first input / output terminal to the ground terminal. In the second state, the switch connects the second input terminal to the second input / output terminal, connects the third input / output terminal to the output terminal, connects the first input / output terminal to the ground terminal, and does not connect the first input terminal to the first input / output terminal and the first input terminal to the third input / output terminal, and does not connect the second input / output terminal to the ground terminal.

[0008] A communication device according to one aspect of the present invention includes the high-frequency module and a signal processing circuit connected to the high-frequency module. Effect of the Invention

[0009] According to the radio frequency module and communication device according to the above aspects, it is possible to reduce loss of received signals and leakage of transmitted signals in any of a plurality of communication bands. [Brief description of the drawings]

[0010] [Figure 1] FIG. 1 is a circuit configuration diagram of a communication device including a high-frequency module according to the first embodiment. [Diagram 2] Fig. 2A is a schematic diagram showing the relationship between a transmission band, a reception band, and a transmission / reception gap in a first communication band, and Fig. 2B is a schematic diagram showing the relationship between a transmission band, a reception band, and a transmission / reception gap in a second communication band. [Diagram 3] Fig. 3A is a partial circuit diagram showing a connection state when a switch of the high-frequency module is in a first state, and Fig. 3B is a partial circuit diagram showing a connection state when a switch of the high-frequency module is in a second state. [Figure 4] FIG. 4 is a plan view of the high-frequency module. [Diagram 5] Fig. 5A is a partial circuit diagram showing a connection state when a switch of the high-frequency module according to embodiment 2 is in a first state, and Fig. 5B is a partial circuit diagram showing a connection state when a switch of the high-frequency module according to embodiment 2 is in a second state. [Figure 6] FIG. 6 is a partial circuit diagram of the high-frequency module according to the third embodiment. [Figure 7] Fig. 7A is a partial circuit diagram showing a connection state when a switch of the high-frequency module according to embodiment 4 is in a first state, and Fig. 7B is a partial circuit diagram showing a connection state when a switch of the high-frequency module according to embodiment 4 is in a second state. [Figure 8] Fig. 8A is a partial circuit diagram showing a connection state when a switch of the high-frequency module according to embodiment 5 is in a third state, and Fig. 8B is a partial circuit diagram showing a connection state when a switch of the high-frequency module according to embodiment 5 is in a fourth state. [Figure 9] Fig. 9A is a partial circuit diagram showing a connection state when a switch of the high-frequency module according to embodiment 6 is in a fifth state, and Fig. 9B is a partial circuit diagram showing a connection state when a switch of the high-frequency module according to embodiment 6 is in a sixth state. [Figure 10]FIG. 10 is a partial circuit diagram showing a connection state when the switch of the high-frequency module according to the seventh embodiment is in the first state. [Figure 11] FIG. 11 is a partial circuit diagram showing a connection state when the switch of the high-frequency module according to the seventh embodiment is in a seventh state. [Figure 12] FIG. 12 is a plan view showing the relationship between the winding axis of a first inductor and the winding axis of a second inductor in the high-frequency module. [Figure 13] FIG. 13 is a plan view of a high-frequency module according to a modified example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Hereinafter, embodiments 1 to 7 will be described with reference to the drawings. The drawings referred to in the following embodiments are schematic drawings, and the sizes and thicknesses of components in the drawings do not necessarily reflect the actual dimensions, and the size ratios and thickness ratios between components do not necessarily reflect the actual dimensional ratios.

[0012] (Embodiment 1) (1) High-frequency module configuration First, the configuration of a high-frequency module 1 according to the first embodiment will be described with reference to FIG.

[0013] The high-frequency module 1 according to the first embodiment is used in, for example, a communication device 100. The communication device 100 is, for example, a mobile phone such as a smartphone. The communication device 100 is not limited to being a mobile phone, and may be, for example, a wearable terminal such as a smart watch. The high-frequency module 1 is, for example, a high-frequency module that can support 4G (fourth generation mobile communication) standards, 5G (fifth generation mobile communication) standards, and the like. The 4G standard is, for example, 3GPP (registered trademark, Third Generation Partnership Project) LTE (registered trademark, Long Term Evolution) standard. The 5G standard is, for example, 5G NR (New Radio). The high-frequency module 1 is, for example, compatible with carrier aggregation and dual connectivity.

[0014] The high-frequency module 1 is provided in a multi-band compatible communication device 100 that complies with a communication standard such as LTE. The high-frequency module 1 can allocate different frequencies to a transmission signal (high-frequency signal for transmission) and a reception signal (high-frequency signal for reception) by, for example, FDD (Frequency Division Duplex), thereby realizing bidirectional transmission of full-duplex communication.

[0015] More specifically, the high frequency module 1 corresponds to a first communication band and a second communication band. Each of the first communication band and the second communication band is, for example, an FDD-compatible communication band that complies with the LTE communication standard. The first communication band is, for example, band 20, and the second communication band is, for example, band 28B.

[0016] As shown in FIG. 2A, the first communication band includes a receiving band Rx1 and a transmitting band Tx1. As shown in FIG. 2B, the second communication band includes a receiving band Rx2 and a transmitting band Tx2. The second communication band has a larger transmitting gap G12 than the first communication band. Here, the transmitting gap G1 of the communication band refers to the difference between the maximum frequency f1 of the lower frequency band among the receiving band and the transmitting band, and the minimum frequency f2 of the higher frequency band among the receiving band and the transmitting band. Here, the maximum frequency f1 of the lower frequency band among the receiving band and the transmitting band, and the minimum frequency f2 of the higher frequency band among the receiving band and the transmitting band are values ​​according to the 3GPP standard. As shown in FIG. 2A, in the first communication band, the lower frequency band among the receiving band Rx1 and the transmitting band Tx1 is the transmitting band Tx1, and the higher frequency band is the receiving band Rx1. Therefore, the transmission / reception gap G11 of the first communication band is the difference between the maximum frequency f11 of the transmission band Tx1 and the minimum frequency f21 of the reception band Rx1. Specifically, the transmission / reception gap G11 of the first communication band is 11 MHz. As shown in FIG. 2B, in the second communication band, the lower frequency band of the reception band Rx2 and the transmission band Tx2 is the transmission band Tx2, and the higher frequency band is the reception band Rx2. Therefore, the transmission / reception gap G12 of the second communication band is the difference between the maximum frequency f12 of the transmission band Tx2 and the minimum frequency f22 of the reception band Rx1. Specifically, the transmission / reception gap G12 of the second communication band is 25 MHz.

[0017] Furthermore, the power class of the transmission signal in the second communication band has a smaller maximum output power than the power class of the transmission signal in the first communication band. The power class of the transmission signal in the first communication band is, for example, power class 2. The power class of the transmission signal in the second communication band is, for example, power class 3.

[0018] The high-frequency module 1 can be electrically connected to an external board (not shown). The external board corresponds to, for example, a mother board of a mobile phone or a communication device. Here, the fact that the high-frequency module 1 can be electrically connected to an external board includes not only the case where the high-frequency module 1 is directly mounted on the external board, but also the case where the high-frequency module 1 is indirectly mounted on the external board. Moreover, the case where the high-frequency module 1 is indirectly mounted on the external board includes the case where the high-frequency module 1 is mounted on another high-frequency circuit mounted on the external board, etc.

[0019] (2) Circuit configuration of high-frequency module 1, the high-frequency module 1 according to the first embodiment includes a switch 40, a first inductor 18, and a second inductor 19. The high-frequency module 1 further includes a low-noise amplifier 51, a duplexer 13, and a duplexer 14. The duplexer 13 includes a first filter 131 having a pass band including the reception band of the first communication band. The duplexer 14 includes a second filter 141 having a pass band including the reception band of the second communication band. The high-frequency module 1 further includes a switch 10, matching circuits 11, 12, and 16, a switch 15, a power amplifier 17, and a plurality of external connection terminals 52. The plurality of external connection terminals 52 include an antenna terminal 521, a signal input terminal 522, and a signal output terminal 523.

[0020] (2.1) First inductor The first inductor 18 functions as a part of a matching circuit connected between the first filter 131 or the second filter 141 and the low-noise amplifier 51. The first inductor 18 has a first end 181 and a second end 182. The first end 181 of the first inductor 18 is connected to the low-noise amplifier 51. The second end 182 of the first inductor 18 is connected to the switch 40 and the second inductor 19.

[0021] (2.2) Second inductor The second inductor 19 has a first end 191 and a second end 192. The first end 191 of the second inductor 19 is connected to the switch 40. The second end 192 of the second inductor 19 is connected to the switch 40 and the first end 181 of the first inductor 18.

[0022] (2.3) Switch The switch 40 is a switch for selecting whether to connect each of the first end 181 of the first inductor 18 and the first end 191 of the second inductor 19 to any one of the first filter 131 of the duplexer 13, the second filter 141 of the duplexer 14, and the ground electrode, or to none of them. The switch 40 can be configured, for example, by a DPDT (Dual Pole Dual Throw) type switch.

[0023] The switch 40 has a first input terminal 401 and a second input terminal 402. The first input terminal 401 is connected to the first filter 131 of the duplexer 13. The second input terminal 402 is connected to the second filter 141 of the duplexer 14.

[0024] The switch 40 further includes an output terminal 403, an input / output terminal 404, and a ground terminal 400. The output terminal 403 is connected to a first end 181 of the first inductor 18. That is, the first inductor 18 is connected between the low-noise amplifier 51 and the output terminal 403. The input / output terminal 404 is connected to a first end 191 of the second inductor 19. In addition, the second end 192 of the second inductor 19 is connected to a path between the output terminal 403 of the switch 40 and the first end 181 of the first inductor 18. That is, the second inductor 19 is connected between the path between the first inductor 18 and the output terminal 403, and the input / output terminal 404. The ground terminal 400 is connected to a ground electrode.

[0025] The switch 40 is switchable between a first state and a second state.

[0026] In the first state, as shown in FIG. 3A, the first input terminal 401 and the output terminal 403 are connected, and the ground terminal 400 and the input / output terminal 404 are connected. In addition, in the first state, two terminals that are connected to each other in the second state described later are not connected to each other. That is, in the first state, the second input terminal 402 is not connected to the input / output terminal 404. That is, in the first state, the first inductor 18 is connected between the first filter 131 and the low-noise amplifier 51. In addition, in the first state, the path between the first inductor 18 and the first filter 131 is connected to the ground electrode via the second inductor 19.

[0027] 3B, in the second state, the second input terminal 402 and the input / output terminal 404 are connected. In addition, in the second state, the two terminals that are connected to each other in the first state are not connected to each other. That is, in the second state, the first input terminal 401 and the output terminal 403 are not connected, and the input / output terminal 404 and the ground terminal 400 are not connected. That is, in the second state, a series circuit of the first inductor 18 and the second inductor 19 is connected between the second filter 141 and the low-noise amplifier 51.

[0028] The switch 40 is controlled by, for example, the RF signal processing circuit 21 of the signal processing circuit 2.

[0029] (2.4) Low-noise amplifier The low-noise amplifier 51 is an amplifier that amplifies a received signal with low noise. More specifically, the low-noise amplifier 51 amplifies a received signal in a first communication band and a received signal in a second communication band. The low-noise amplifier 51 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the low-noise amplifier 51 is connected to the second end 182 of the first inductor 18. The output terminal of the low-noise amplifier 51 is connected to an external circuit (e.g., the signal processing circuit 2) via a signal output terminal 523.

[0030] (2.5) Duplexer The duplexer 13 includes a first filter 131 and a transmission filter 132. Each of the first filter 131 and the transmission filter 132 is, for example, an acoustic wave filter including a plurality of series arm resonators and a plurality of parallel arm resonators. The acoustic wave filter is, for example, a SAW (Surface Acoustic Wave) filter that uses surface acoustic waves.

[0031] The first filter 131 is a receiving filter having a pass band including the receiving band of the first communication band. The first filter 131 has an input terminal and an output terminal. The input terminal of the first filter 131 is connected to the switch 10 via the matching circuit 11. The output terminal of the first filter 131 is connected to the first input terminal 401 of the switch 40.

[0032] The transmit filter 132 is a transmit filter having a pass band including the transmit band of the first communication band. The transmit filter 132 has an input terminal and an output terminal. The input terminal of the transmit filter 132 is connected to the switch 15. The output terminal of the transmit filter 132 is connected to the switch 10 via the matching circuit 11.

[0033] In the high-frequency module 1, an input terminal of a first filter 131 and an output terminal of a transmission filter 132 are connected to one selection terminal of a switch 10 via a matching circuit 11.

[0034] The duplexer 14 includes a second filter 141 and a transmission filter 142. Each of the second filter 141 and the transmission filter 142 is, for example, an acoustic wave filter including a plurality of series arm resonators and a plurality of parallel arm resonators. The acoustic wave filter is, for example, a SAW (Surface Acoustic Wave) filter that uses surface acoustic waves.

[0035] The second filter 141 is a receiving filter having a pass band including the receiving band of the second communication band. The second filter 141 has an input terminal and an output terminal. The input terminal of the second filter 141 is connected to the switch 10 via the matching circuit 12. The output terminal of the second filter 141 is connected to the second input terminal 402 of the switch 40.

[0036] The transmit filter 142 is a transmit filter having a pass band including the transmit band of the second communication band. The transmit filter 142 has an input terminal and an output terminal. The input terminal of the transmit filter 142 is connected to the switch 15. The output terminal of the transmit filter 142 is connected to the switch 10 via the matching circuit 12.

[0037] In the high-frequency module 1, an input terminal of a second filter 141 and an output terminal of a transmission filter 142 are connected to one selection terminal of a switch 10 via a matching circuit 12.

[0038] (2.6) Switch The switch 10 is a switch for selecting a path to be connected to the antenna terminal 521 from the duplexer 13 and the duplexer 14. The switch 10 has a common terminal 101 and selection terminals 102 and 103.

[0039] The common terminal 101 is connected to the antenna terminal 521. The selection terminal 102 is connected to the duplexer 13 via the matching circuit 11. The selection terminal 103 is connected to the duplexer 14 via the matching circuit 12.

[0040] The switch 10 is controlled by, for example, an RF signal processing circuit 21 of the signal processing circuit 2.

[0041] The switch 15 is a switch for selecting a path connected to the power amplifier 17 from the transmission filters 132 and 142. The switch 15 has a common terminal 150 and selection terminals 151 and 152.

[0042] The common terminal 150 is connected to the power amplifier 17 via the matching circuit 16. The selection terminal 151 is connected to the input terminal of the transmission filter 132 included in the duplexer 13. The selection terminal 152 is connected to the input terminal of the transmission filter 142 included in the duplexer 14.

[0043] The switch 15 is controlled by, for example, the RF signal processing circuit 21 of the signal processing circuit 2.

[0044] (2.7) Power Amplifier The power amplifier 17 is an amplifier that amplifies a transmission signal. The power amplifier 17 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the power amplifier 17 is connected to an external circuit (e.g., the signal processing circuit 2) via a signal input terminal 522. The output terminal of the power amplifier 17 is connected to a common terminal 150 of the switch 15 via a matching circuit 16.

[0045] (2.8) Matching circuit The matching circuit 11 is a circuit for matching the impedance of the duplexer 13 connected via the matching circuit 11 with the impedance of the antenna terminal 521. The matching circuit 11 includes at least one of an inductor and a capacitor.

[0046] The matching circuit 12 is a circuit for matching the impedance of the duplexer 14 connected via the matching circuit 12 with the impedance of the antenna terminal 521. The matching circuit 12 includes at least one of an inductor and a capacitor.

[0047] The matching circuit 16 is a circuit for matching the impedance of the transmission filter 132 or the transmission filter 142 connected via the matching circuit 16 with the impedance of the power amplifier 17. The matching circuit 16 includes at least one of an inductor and a capacitor.

[0048] (2.9) External connection terminal The multiple external connection terminals 52 are terminals for electrically connecting to an external circuit (for example, the signal processing circuit 2). The multiple external connection terminals 52 include an antenna terminal 521, a signal input terminal 522, a signal output terminal 523, multiple control terminals (not shown), and multiple ground terminals (not shown).

[0049] The antenna 3 is connected to the antenna terminal 521. In the high-frequency module 1, the antenna terminal 521 is connected to the common terminal 101 of the switch 10.

[0050] The signal input terminal 522 is a terminal for inputting a transmission signal from an external circuit (for example, the signal processing circuit 2) to the high-frequency module 1. In the high-frequency module 1, the signal input terminal 522 is connected to an input terminal of the power amplifier 17.

[0051] The signal output terminal 523 is a terminal for outputting a signal received from the high frequency module 1 to an external circuit (for example, the signal processing circuit 2). In the high frequency module 1, the signal output terminal 523 is connected to the output terminal of the low noise amplifier 51.

[0052] The control terminals are terminals for inputting control signals to the high frequency module 1 from an external circuit (eg, the signal processing circuit 2).

[0053] The multiple ground terminals are terminals to which a ground potential is applied by being electrically connected to a ground electrode of an external substrate (not shown) included in the communication device 100. One of the multiple ground terminals is connected to a ground terminal 400 of the switch 40. In the high-frequency module 1, the multiple ground terminals are connected to a ground layer (not shown) of the substrate 6 (see FIG. 4).

[0054] (3) Configuration of communication device As shown in FIG. 1, the communication device 100 includes a high-frequency module 1, a signal processing circuit 2, and an antenna 3.

[0055] The antenna 3 is connected to an antenna terminal 521 of the high frequency module 1. The antenna 3 has a transmitting function of emitting a transmission signal output from the high frequency module 1 as radio waves, and a receiving function of receiving a reception signal from the outside as radio waves and outputting it to the high frequency module 1.

[0056] The signal processing circuit 2 includes an RF signal processing circuit 21 and a baseband signal processing circuit 22. The signal processing circuit 2 processes signals passing through the high-frequency module 1. More specifically, the signal processing circuit 2 processes transmission signals and reception signals.

[0057] The RF signal processing circuit 21 is, for example, a radio frequency integrated circuit (RFIC). The RF signal processing circuit 21 performs signal processing on a high frequency signal.

[0058] The RF signal processing circuit 21 performs signal processing such as up-conversion and amplification on the transmission signal transmitted from the baseband signal processing circuit 22, and outputs the processed transmission signal to the high-frequency module 1. In addition, the RF signal processing circuit 21 performs signal processing such as amplification and down-conversion on the reception signal output from the high-frequency module 1, and outputs the processed reception signal to the baseband signal processing circuit 22.

[0059] The baseband signal processing circuit 22 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 22 performs predetermined signal processing on a transmission signal from outside the signal processing circuit 2. The received signal processed by the baseband signal processing circuit 22 is used, for example, as an image signal for image display or as an audio signal for telephone conversation.

[0060] The RF signal processing circuit 21 also functions as a control unit that controls the connections of the switches 40, 10, and 15 of the high-frequency module 1 based on the transmission and reception of high-frequency signals (transmission signal, reception signal). Specifically, the RF signal processing circuit 21 switches the connections of the switches 40, 10, and 15 of the high-frequency module 1 using a control signal (not shown). The control unit may be provided outside the RF signal processing circuit 21, and may be provided in, for example, the high-frequency module 1 or the baseband signal processing circuit 22.

[0061] (4) Structure of high-frequency module Next, the structure of the high-frequency module 1 according to the first embodiment will be described with reference to FIG.

[0062] 4, the high-frequency module 1 includes a substrate 6, matching circuits 11, 12, and 16, a duplexer 13, a duplexer 14, a power amplifier 17, a first inductor 18, a second inductor 19, and IC chips 71, 72, and 73. In the following description, the long axis direction of the substrate 6 is referred to as a first direction D1, the short axis direction of the substrate 6 is referred to as a second direction D2, and the thickness direction of the substrate 6 is referred to as a third direction D3. The first direction D1, the second direction D2, and the third direction D3 are perpendicular to each other.

[0063] The high frequency module 1 is electrically connected to an external board (not shown). The external board is, for example, a mother board of a communication device 100 (see FIG. 1) such as a mobile phone or a communication device.

[0064] (4.1) Substrate 4, the substrate 6 has a first main surface 61 and a second main surface 62. The first main surface 61 and the second main surface 62 face each other in a third direction D3, which is a thickness direction of the substrate 6. When the high-frequency module 1 is provided on an external substrate, the second main surface 62 faces a main surface of the external substrate on the substrate 6 side. The substrate 6 is a double-sided mounting substrate in which the matching circuits 11, 12, and 16, the duplexer 13, the duplexer 14, the power amplifier 17, the first inductor 18, and the second inductor 19 are mounted on the first main surface 61, and the IC chips 71, 72, and 73 and a plurality of external connection terminals 52 are mounted on the second main surface 62.

[0065] The substrate 6 is a multilayer substrate in which a plurality of dielectric layers are laminated. The substrate 6 has a plurality of conductive layers and a plurality of via conductors (including through electrodes). The plurality of conductive layers includes a ground electrode at a ground potential. The plurality of via conductors are used for electrical connection between the elements mounted on the first main surface 61 and the second main surface 62 and the conductive layers of the substrate 6. The elements mounted on the first main surface 61 and the second main surface 62 include the above-mentioned matching circuits 11, 12, and 16, the duplexer 13, the duplexer 14, the power amplifier 17, the first inductor 18, the second inductor 19, the IC chips 71, 72, and 73, and a plurality of external connection terminals 52.

[0066] (4.2) IC Chip The IC chip 71 is disposed on the second main surface 62 of the substrate 6. The IC chip 71 includes, for example, a switch 10.

[0067] The IC chip 72 is disposed on the second main surface 62 of the substrate 6. The IC chip 72 includes a switch 15, for example.

[0068] The IC chip 73 is disposed on the second main surface 62 of the substrate 6. The IC chip 73 includes a low-noise amplifier 51 and a switch 40, for example.

[0069] (4.3) Layout on RF Module The first inductor 18 and the second inductor 19 are disposed adjacent to each other on the first main surface 61 of the substrate 6. Here, "the first inductor 18 and the second inductor 19 are disposed adjacent to each other on the first main surface 61 of the substrate 6" means that the first inductor 18 and the second inductor 19 are disposed on the first main surface 61 of the substrate 6, and nothing is disposed between the first inductor 18 and the second inductor 19 on the first main surface 61.

[0070] Also, the direction A1 of the winding axis of the first inductor 18 (see FIG. 12) and the direction A2 of the winding axis of the second inductor 19 (see FIG. 12) are parallel to each other. Here, "the direction A1 of the winding axis of the first inductor 18 and the direction A2 of the winding axis of the second inductor 19 are parallel to each other" means that the angle between the direction A1 of the winding axis of the first inductor 18 and the direction A2 of the winding axis of the second inductor 19 is 45 degrees or less, as shown in FIG. 12. It is more preferable that the angle between the direction A1 of the winding axis of the first inductor 18 and the direction A2 of the winding axis of the second inductor 19 is 10 degrees or less. As a result, the magnetic fields generated in the first inductor 18 and the second inductor 19 further strengthen each other, so that the first inductor 18 and the second inductor 19 are magnetically coupled. As a result, for example, when the first inductor 18 and the second inductor 19 are connected in series, the Q value of the series circuit of the first inductor 18 and the second inductor 19 becomes larger than the Q value of the series circuit of the first inductor 18 and the second inductor 19 when the first inductor 18 and the second inductor 19 are not magnetically coupled. Therefore, when the matching circuit between the first filter 131 and the low-noise amplifier 51 is a circuit including both the first inductor 18 and the second inductor 19, it is possible to reduce loss of the received signal in the first communication band.

[0071] Moreover, the first inductor 18 is larger than the second inductor 19. Since the first inductor 18 is always connected in series between the low-noise amplifier 51 and the first filter 131 or the second filter 141, it is preferable that the resistance of the first inductor 18 is smaller than that of the second inductor 19. On the other hand, when the second inductor 19 is connected in series between the low-noise amplifier 51 and the first filter 131 or the second filter 141, the second inductor 19 is connected in series with the first inductor 18. As described above, the Q value of the series circuit of the first inductor 18 and the second inductor 19 is larger than that of the series circuit of the first inductor 18 and the second inductor 19 when there is no magnetic coupling between the first inductor 18 and the second inductor 19. Therefore, even when the second inductor 19 is small, the loss of the received signal is smaller than that of a single inductor having the same inductance as the series circuit of the first inductor 18 and the second inductor 19.

[0072] Moreover, in a plan view from a third direction D3, which is the thickness direction of the substrate 6, the first inductor 18 overlaps with the IC chip 73. Here, "in a plan view from the third direction D3, the first inductor 18 overlaps with the IC chip 73" means that, in a plan view from the third direction D3, at least a part of the first inductor 18 overlaps with at least a part of the IC chip 73. This allows the length of the wiring between the second end 182 of the first inductor 18 and the low-noise amplifier 51 included in the IC chip 73 to be shortened. Therefore, the loss of the received signal of the high-frequency module 1 is reduced. In addition, the length of the wiring between the first inductor 18 and the switch 40 included in the IC chip 73 can be shortened, and the loss of the received signal of the high-frequency module 1 can be reduced.

[0073] Moreover, in a plan view from a third direction D3, which is the thickness direction of the substrate 6, the second inductor 19 overlaps with the IC chip 73. Here, "in a plan view from the third direction D3, the second inductor 19 overlaps with the IC chip 73" means that at least a part of the second inductor 19 overlaps with at least a part of the IC chip 73 in a plan view from the third direction D3. This makes it possible to shorten the length of each of the wiring portion between the output terminal 403 of the switch 40 and the second end 192 of the second inductor 19, and the wiring portion between the input / output terminal 404 of the switch 40 and the first end 191 of the second inductor 19. Therefore, the loss of the received signal of the high-frequency module 1 is reduced.

[0074] (5) Operation of high frequency module The operation of the high-frequency module 1 according to the first embodiment will be described below with reference to FIGS. 3A and 3B.

[0075] In the high-frequency module 1 according to the first embodiment, the second end 182 of the first inductor 18 is connected to an input terminal of the low-noise amplifier 51. Furthermore, the first end 181 of the first inductor 18 is connected to either the first filter 131 or the second filter 141 via the switch 40. Furthermore, the first end 181 of the first inductor 18 can be connected to a ground electrode via the second inductor 19.

[0076] When the second inductor 19 is connected to the ground electrode, the circuit between the first input terminal 401 or the second input terminal 402 of the switch 40 and the low-noise amplifier 51 includes the first inductor 18 and the second inductor 19, and induces an impedance mismatch with the low-noise amplifier 51 transmitted from the antenna terminal 521 of the high-frequency module 1. That is, even if a part of the transmission signal output from the power amplifier 17 leaks from the duplexer 13 or the duplexer 14 to the switch 40, the leaked part of the transmission signal is unlikely to reach the low-noise amplifier 51. On the other hand, the characteristics of the circuit between the first input terminal 401 or the second input terminal 402 of the switch 40 and the low-noise amplifier 51 differ between a configuration in which the second inductor 19 is connected to the ground electrode and a configuration in which the second inductor 19 is not connected to the ground electrode. Therefore, depending on the communication band, it may be possible to reduce the loss of the received signal and obtain good characteristics by not connecting the second inductor 19 to the ground.

[0077] As described above, in the first communication band, the transmission / reception gap G11 between the transmission band Tx1 and the reception band Rx1 is smaller than the transmission / reception gap G12 in the second communication band. In addition, the transmission signal in the first communication band is a transmission signal of power class 2, and has a larger maximum output power than the transmission signal in the second communication band. Therefore, the strength of the transmission signal in the first communication band that enters the switch 40 from the first filter 131 when receiving a reception signal in the first communication band is larger than the strength of the transmission signal in the second communication band that enters the switch 40 from the second filter 141 when receiving a reception signal in the second communication band.

[0078] In the high-frequency module 1 according to the first embodiment, when a reception signal in the first communication band is received, the switch 40 is set to the first state as shown in Fig. 3A. Therefore, the first end 181 of the first inductor 18 is connected to the first filter 131 via the switch 40. Furthermore, the first end 181 of the first inductor 18 is connected to the ground electrode via the second inductor 19. Therefore, the high-frequency module 1 can accurately remove a transmission signal in the first communication band that enters the switch 40 from the first filter 131 when receiving a reception signal in the first communication band.

[0079] On the other hand, in the high-frequency module 1 according to the first embodiment, when receiving a reception signal in the second communication band, the switch 40 is set to the second state as shown in FIG. 3B. Therefore, the first end 181 of the first inductor 18 is connected to the second filter 141 via the second inductor 19 and the switch 40. That is, a series circuit of the first inductor 18 and the second inductor 19 is connected between the second filter 141 and the low-noise amplifier 51. Therefore, when receiving a reception signal in the second communication band, the high-frequency module 1 can reduce loss of the reception signal in the second communication band and optimize the characteristics of the circuit between the second filter 141 and the low-noise amplifier 51.

[0080] (6) Effects The high-frequency module 1 according to the first embodiment includes a low-noise amplifier 51 that amplifies a received signal, a switch 40, a first inductor 18, a second inductor 19, a first filter 131, and a second filter 141. The switch 40 has a first input terminal 401, a second input terminal 402, an output terminal 403, an input / output terminal 404, and a ground terminal 400. The first inductor 18 is connected between the input terminal and the output terminal 403 of the low-noise amplifier 51. The second inductor 19 is connected between the path between the first inductor 18 and the output terminal 403, and the input / output terminal 404. The first filter 131 is connected to the first input terminal 401 and has a pass band including the reception band of the first communication band. The second filter 141 is connected to the second input terminal 402 and has a pass band including the reception band of the second communication band. The second communication band has a wider transmission / reception gap than the first communication band. The switch 40 is switchable between a first state and a second state. In the first state of the switch 40, the first input terminal 401 and the output terminal 403 are connected, the input / output terminal 404 and the ground terminal 400 are connected, and the second input terminal 402 and the input / output terminal 404 are not connected. In the second state of the switch 40, the second input terminal 402 and the input / output terminal 404 are connected, the first input terminal 401 and the output terminal 403 are not connected, and the input / output terminal 404 and the ground terminal 400 are not connected.

[0081] As a result, in the high-frequency module 1, when a reception signal in the first communication band is received, the switch 40 is in the first state, thereby reducing leakage of the transmission signal in the first communication band to the low-noise amplifier 51. Also, in the high-frequency module 1, when a reception signal in the second communication band is received, the switch 40 is in the second state, thereby reducing loss of the reception signal in the second communication band.

[0082] Moreover, the high-frequency module 1 according to the first embodiment includes a substrate 6. The substrate 6 has a first main surface 61 and a second main surface 62 that face each other. The first inductor 18 and the second inductor 19 are disposed adjacent to each other on the first main surface 61 of the substrate 6. The direction A1 of the winding axis of the first inductor 18 and the direction A2 of the winding axis of the second inductor 19 are parallel to each other. This makes it possible to reduce loss of a received signal in the second communication band when both the first inductor 18 and the second inductor 19 are used.

[0083] In the high-frequency module 1 according to the first embodiment, the transmission signal in the first communication band is a transmission signal of power class 2. The transmission signal in the second communication band is a transmission signal of which maximum output power is lower than that of power class 2.

[0084] As a result, in the high-frequency module 1, when receiving a reception signal in the first communication band, leakage of the transmission signal in the first communication band to the low-noise amplifier 51 can be reduced, and when receiving a reception signal in the second communication band, loss of the reception signal in the second communication band can be reduced.

[0085] Moreover, the high-frequency module 1 according to the first embodiment includes a transmission filter 132 having a passband including the transmission band of the first communication band. The first filter 131 and the transmission filter 132 configure a duplexer 13. As a result, the high-frequency module 1 according to the first embodiment can handle both the transmission of transmission signals and the reception of reception signals of the first communication band, and can reduce the effect of the transmission signals of the first communication band on the reception operation of the first communication band.

[0086] Moreover, the high-frequency module 1 according to the first embodiment includes a transmission filter 142 having a passband including the transmission band of the second communication band. The second filter 141 and the transmission filter 142 configure a duplexer 14. As a result, the high-frequency module 1 according to the first embodiment can handle both the transmission of transmission signals and the reception of reception signals of the second communication band, and can reduce the effect of the transmission signals of the second communication band on the reception operation of the second communication band.

[0087] Furthermore, in the high-frequency module 1 according to the first embodiment, the first inductor 18 is larger than the second inductor 19 in a plan view in the thickness direction D3 of the substrate 6. As a result, when receiving a signal in the first communication band, the Q value of the first inductor 18 is large, so that loss in the received signal can be reduced. When receiving a signal in the second communication band, the Q value of the circuit including the first inductor 18 and the second inductor 19 is large, so that an increase in loss in the received signal is unlikely to occur even if the second inductor 19 is smaller than the first inductor 18.

[0088] Moreover, in the high-frequency module 1 according to the first embodiment, the IC chip 73 is disposed on the second main surface 62 of the substrate 6. The IC chip 73 includes a low-noise amplifier 51. In a plan view from the thickness direction D3 of the substrate 6, the first inductor 18 and the IC chip 73 overlap each other. This makes it possible to shorten the length of the wiring portion between the second end 182 of the first inductor 18 and the low-noise amplifier 51 included in the IC chip 73. This reduces the loss of the received signal of the high-frequency module 1.

[0089] Moreover, in the high-frequency module 1 according to the first embodiment, the IC chip 73 further includes a switch 40. The second inductor 19 is disposed on the first main surface 61 of the substrate 6. The IC chip 73 is disposed on the second main surface 62 of the substrate 6. In a plan view from the thickness direction D3 of the substrate 6, the second inductor 19 and the IC chip 73 overlap each other. This makes it possible to shorten the length of each of the wiring portion between the output terminal 403 of the switch 40 and the second end 192 of the second inductor 19, and the wiring portion between the input / output terminal 404 of the switch 40 and the first end 191 of the second inductor 19. Therefore, the loss of the received signal of the high-frequency module 1 is reduced.

[0090] (Embodiment 2) (1) Composition 5A and 5B, in the high-frequency module 1 according to the second embodiment, the switch 40 includes a first switch 41 and a second switch 42. Note that the high-frequency module 1 according to the second embodiment includes all the components of the high-frequency module 1 according to the first embodiment except for the switch 40, and therefore a description of the same components will be omitted.

[0091] The first switch 41 is a switch that selects whether or not the first end 181 of the first inductor 18 is connected to the first filter 131.

[0092] The first switch 41 has a first input terminal 401 and an output terminal 403. The first input terminal 401 is connected to the first filter 131. The output terminal 403 is connected to the first end 181 of the first inductor 18. The second end 192 of the second inductor 19 is connected to a path between the output terminal 403 of the switch 40 and the first end 181 of the first inductor 18.

[0093] The first switch 41 can be switched between a first state and a second state. In the first state, as shown in Fig. 5A, the first input terminal 401 and the output terminal 403 are connected. In the second state, as shown in Fig. 5B, the first input terminal 401 and the output terminal 403 are not connected.

[0094] The second switch 42 is a switch for selecting the path connected to the first end 191 of the second inductor 19 from the second filter 141 of the duplexer 14 and the ground electrode.

[0095] The second switch 42 has a second input terminal 402, an input / output terminal 404, and a ground terminal 400. The second input terminal 402 is connected to the second filter 141. The input / output terminal 404 is connected to the first end 191 of the second inductor 19. The ground terminal 400 is connected to the ground electrode.

[0096] The second switch 42 is switchable between a first state and a second state. In the first state, as shown in Fig. 5A, the input / output terminal 404 and the ground terminal 400 are connected, and the second input terminal 402 and the input / output terminal 404 are not connected. In the second state, as shown in Fig. 5B, the second input terminal 402 and the input / output terminal 404 are connected, and the ground terminal 400 and the input / output terminal 404 are not connected.

[0097] The first switch 41 and the second switch 42 are controlled by, for example, the RF signal processing circuit 21 of the signal processing circuit 2.

[0098] In the high-frequency module 1 according to the second embodiment, when a reception signal in the first communication band is received, both the first switch 41 and the second switch 42 are set to the first state. This makes it possible to reduce leakage of the transmission signal in the first communication band to the low-noise amplifier 51, as in the first embodiment. Moreover, in the high-frequency module 1 according to the second embodiment, when a reception signal in the second communication band is received, both the first switch 41 and the second switch 42 are set to the second state. This makes it possible to reduce loss of the reception signal in the second communication band, as in the first embodiment. Moreover, in the high-frequency module 1 according to the second embodiment, since the switch 40 is separated into the first switch 41 and the second switch 42, loss in the switch 40 can be reduced.

[0099] (2) Effects The high-frequency module 1 according to the second embodiment includes a first switch 41 and a second switch 42 instead of the switch 40. The first switch 41 has a first input terminal 401 and an output terminal 403, and can switch between connection and non-connection between the first input terminal 401 and the output terminal 403. The second switch 42 has a second input terminal 402, an input / output terminal 404, and a ground terminal 400, and can connect the input / output terminal 404 to the second input terminal 402 or the ground terminal 400. In the first state, the first switch 41 connects the first input terminal 401 and the output terminal 403. In the first state, the second switch 42 connects the input / output terminal 404 and the ground terminal 400, and does not connect the second input terminal 402 and the input / output terminal 404. In the second state, the first switch 41 does not connect the first input terminal 401 and the output terminal 403. In the second state, the second switch 42 connects the second input terminal 402 to the input / output terminal 404 and does not connect the input / output terminal 404 to the ground terminal 400 .

[0100] As a result, in the high-frequency module 1 according to the second embodiment, like the high-frequency module 1 according to the first embodiment, when receiving a reception signal in the first communication band, leakage of a transmission signal in the first communication band to the low-noise amplifier 51 can be reduced. Also, in the high-frequency module 1 according to the second embodiment, like the high-frequency module 1 according to the first embodiment, when receiving a reception signal in the second communication band, loss of the reception signal in the second communication band can be reduced. Also, in the high-frequency module 1 according to the second embodiment, since the switch 40 is separated into the first switch 41 and the second switch 42, loss in the switch 40 can be reduced.

[0101] (Embodiment 3) (1) Composition 6, the high-frequency module 1 according to the third embodiment further includes a second low-noise amplifier 512 and a third inductor 189 in comparison with the high-frequency module 1 according to the second embodiment, and the switch 40 includes a second switch 42a instead of the second switch 42. Note that the high-frequency module 1 according to the third embodiment includes all the components of the high-frequency module 1 according to the second embodiment except for the second switch 42, and therefore a description of the same components will be omitted.

[0102] The second switch 42a has a second input terminal 402, an input / output terminal 404, a ground terminal 400, and a third input terminal 409. The second input terminal 402 is connected to the second filter 141 (see FIG. 1) of the duplexer 14. The input / output terminal 404 is connected to the first end 191 of the second inductor 19. The ground terminal 400 is connected to a ground electrode. The third input terminal 409 is, for example, a terminal to which a received signal of the third communication band is input, and is connected to a filter (not shown) having a pass band including the receiving band of the third communication band.

[0103] The second switch 42a can be switched to a third state in addition to a first state and a second state. In the first state, the ground terminal 400 and the input / output terminal 404 are connected, and the input / output terminal 404 is not connected to either the second input terminal 402 or the third input terminal 409. In the second state, the second input terminal 402 and the input / output terminal 404 are connected, and the input / output terminal 404 is not connected to either the third input terminal 409 or the ground terminal 400. In the third state, the third input terminal 409 and the input / output terminal 404 are connected, and the input / output terminal 404 is not connected to either the second input terminal 402 or the ground terminal 400.

[0104] The second low-noise amplifier 512 is an amplifier that amplifies a received signal with low noise. More specifically, the second low-noise amplifier 512 is an amplifier that amplifies a received signal in a third communication band. The second low-noise amplifier 512 is different from the low-noise amplifier 51. In the third embodiment, the low-noise amplifier 51 corresponds to the first low-noise amplifier. An input terminal of the second low-noise amplifier 512 is connected to the third inductor 189. An output terminal of the second low-noise amplifier 512 is connected to an external circuit (for example, the signal processing circuit 2) via one of the external connection terminals 52.

[0105] A first end of the third inductor 189 is connected to the input terminal of the second low-noise amplifier 512. A second end of the third inductor 189 is connected between the second inductor 19 and the path between the first inductor 18 and the output terminal 403. In other words, the third inductor 189 is connected between the second low-noise amplifier 512 and the path between the second inductor 19 and the first inductor 18.

[0106] The high-frequency module 1 according to the third embodiment operates in the same manner as the high-frequency module 1 according to the second embodiment when receiving the first communication band and when receiving the second communication band. When receiving the third communication band, the high-frequency module 1 according to the third embodiment switches the first switch 41 and the second switch 42a to the third state. In the third state, the first switch 41 disconnects the first input terminal 401 from the output terminal 403, as in the second state. In the third state, the second switch 42a connects the third input terminal 409 to the input / output terminal 404.

[0107] Therefore, in the high-frequency module 1 according to the third embodiment, in reception of the first communication band, the first inductor 18 is connected in series between the first input terminal 401 and the first low-noise amplifier 51, and the path between the first inductor 18 and the first input terminal 401 is connected to the ground electrode via the second inductor 19. In addition, in the high-frequency module 1 according to the third embodiment, in reception of the second communication band, a series circuit of the second inductor 19 and the first inductor 18 is connected between the second input terminal 402 and the first low-noise amplifier 51. In addition, in the high-frequency module 1 according to the third embodiment, in reception of the third communication band, a series circuit of the second inductor 19 and the third inductor 189 is connected between the third input terminal 409 and the second low-noise amplifier 512. Therefore, in the high-frequency module 1 of the third embodiment, it is possible to switch between the first low-noise amplifier 51 and the second low-noise amplifier 512 to be used for receiving the second communication band and the third communication band, and to easily change the characteristics of the circuit between the second input terminal 402 of the switch 40 and the first low-noise amplifier 51 and the circuit between the third input terminal 409 of the switch 40 and the second low-noise amplifier 512.

[0108] (2) Effects The high-frequency module 1 according to the third embodiment further includes a second low-noise amplifier 512 different from the first low-noise amplifier 51, and a third inductor 189 connected to the second low-noise amplifier 512. The third inductor 189 is connected between the second low-noise amplifier 512 and a path between the second inductor 19 and the first inductor 18. As a result, in the high-frequency module 1 according to the third embodiment, the second low-noise amplifier 512 is used in receiving a communication band different from the first and second communication bands, and the third inductor 189 and the second inductor 19 can be connected between the second low-noise amplifier 512 and the receiving path of that communication band. This makes it possible to optimize the receiving characteristics of the third communication band.

[0109] (Embodiment 4) (1) Composition 7A and 7B, the high-frequency module 1 according to the fourth embodiment includes a first inductor 18a, a second inductor 19a, and a switch 43 instead of the first inductor 18, the second inductor 19, and the switch 40 of the high-frequency module 1 according to the first embodiment. Note that the high-frequency module 1 according to the fourth embodiment includes all the components of the high-frequency module 1 according to the first embodiment except for the first inductor 18, the second inductor 19, and the switch 40, and therefore a description of the same components will be omitted.

[0110] The switch 43 is a switch for selecting whether each of the first filter 131 of the duplexer 13 and the second filter 141 of the duplexer 14 is connected to the first inductor 18a, the second inductor 19a, or the low-noise amplifier 51. The switch 43 is a switch for selecting whether each of the first inductor 18a and the second inductor 19a is connected to each other, and for selecting whether the ground terminal 400 is connected to the first inductor 18a or the second inductor 19a. The switch 40 can be configured, for example, by a DPDT (Dual Pole Dual Throw) type switch.

[0111] The switch 43 has a first input terminal 401, a second input terminal 402, and a ground terminal 400. The first input terminal 401 is connected to the first filter 131 of the duplexer 13. The second input terminal 402 is connected to the second filter 141 of the duplexer 14. The ground terminal 400 is connected to a ground electrode.

[0112] The switch 43 further includes an output terminal 431, a first input / output terminal 432, a second input / output terminal 433, and a third input / output terminal 434. The output terminal 431 is connected to the low-noise amplifier 51. The first input / output terminal 432 is connected to the first inductor 18a. That is, the first inductor 18a is connected between the path between the output terminal 431 and the low-noise amplifier 51 and the first input / output terminal 432. The second input / output terminal 433 and the third input / output terminal 434 are connected to the second inductor 19a. More specifically, the second inductor 19a is connected between the second input / output terminal 433 and the third input / output terminal 434.

[0113] The switch 43 is switchable between a first state and a second state.

[0114] In the first state, as shown in Fig. 7A, the first input terminal 401 and the first input / output terminal 432, and the first input terminal 401 and the third input / output terminal 434 are connected, and the second input / output terminal 433 and the ground terminal 400 are connected. In the first state, the second input terminal 402 and the second input / output terminal 433 are not connected, the third input / output terminal 434 and the output terminal 431 are not connected, and the first input / output terminal 432 and the ground terminal 400 are not connected. That is, in the first state, the first inductor 18a is connected between the first filter 131 and the low-noise amplifier 51. Also, in the first state, the path between the first inductor 18a and the first filter 131 is connected to the ground electrode via the second inductor 19a.

[0115] 7B, in the second state, the second input terminal 402 and the second input / output terminal 433 are connected, the third input / output terminal 434 and the output terminal 431 are connected, and the first input / output terminal 432 and the ground terminal 400 are connected. In the second state, the first input terminal 401 and the first input / output terminal 432, and the first input terminal 401 and the third input / output terminal 434 are not connected to each other, and the second input / output terminal and the ground terminal 400 are not connected.

[0116] The switch 40 is controlled by, for example, the RF signal processing circuit 21 of the signal processing circuit 2.

[0117] Each of the first inductor 18a and the second inductor 19a functions as a part of a circuit connected between the first filter 131 or the second filter 141 and the low-noise amplifier 51.

[0118] The first inductor 18a and the second inductor 19a are preferably disposed adjacent to each other.

[0119] Moreover, it is preferable that the winding axis direction of the first inductor 18a and the winding axis direction of the second inductor 19a are parallel to each other.

[0120] (2) Operation Hereinafter, the operation of the high-frequency module 1 according to the fourth embodiment will be described with reference to FIGS. 7A and 7B.

[0121] In the high-frequency module 1 according to the fourth embodiment, when a reception signal in the first communication band is received, the switch 43 is set to the first state as shown in Fig. 7A. Therefore, the low-noise amplifier 51 is connected to the first filter 131 via the first inductor 18a. Furthermore, the path between the first inductor 18a and the first filter 131 is connected to the ground electrode via the second inductor 19a. Therefore, the high-frequency module 1 can accurately remove a transmission signal in the first communication band that enters the switch 40 from the first filter 131 when receiving a reception signal in the first communication band.

[0122] On the other hand, in the high-frequency module 1 according to the fourth embodiment, when a reception signal in the second communication band is received, the switch 43 is set to the second state as shown in FIG. 7B. Therefore, the low-noise amplifier 51 is connected to the second filter 141 via the second inductor 19a. Furthermore, the path between the low-noise amplifier 51 and the second inductor 19a is connected to the ground electrode via the first inductor 18a. That is, the high-frequency module 1 switches the inductor connected to the low-noise amplifier 51 and the inductor connected to the ground electrode between the reception signal in the first communication band and the reception signal in the second communication band. This makes it possible for the high-frequency module 1 to easily change the characteristics of the circuit between the first input terminal 401 or the second input terminal 402 of the switch 40 and the low-noise amplifier 51 between the reception signal in the first communication band and the reception signal in the second communication band.

[0123] (3) Effects The high-frequency module 1 according to the fourth embodiment includes a low-noise amplifier 51 that amplifies a received signal, a switch 43, a first inductor 18a, a second inductor 19a, a first filter 131, and a second filter 141. The switch 43 has a first input terminal 401, a second input terminal 402, an output terminal 431, a first input / output terminal 432, a second input / output terminal 433, a third input / output terminal 434, and a ground terminal 400. The first inductor 18a is connected between a path between the input terminal and the output terminal 431 of the low-noise amplifier 51 and the first input / output terminal 432. The second inductor 19a is connected between the second input / output terminal 433 and the third input / output terminal 434. The first filter 131 is connected to the first input terminal 401 and has a pass band including the reception band of the first communication band. The second filter 141 is connected to the second input terminal 402 and has a pass band including the reception band of the second communication band. The second communication band has a wider transmission / reception gap than the first communication band. The switch 43 is capable of switching between a first state and a second state. In the first state, the switch 43 connects the first input terminal 401 to the first input / output terminal 432 and the first input terminal 401 to the third input / output terminal 434, connects the second input / output terminal 433 to the ground terminal 400, and does not connect the second input terminal 402 to the second input / output terminal 433, does not connect the third input / output terminal 434 to the output terminal 431, and does not connect the first input / output terminal 432 to the ground terminal 400. In the second state of switch 43, the second input terminal 402 and the second input / output terminal 433 are connected, the third input / output terminal 434 and the output terminal 431 are connected, the first input / output terminal 432 and the ground terminal 400 are connected, and the first input terminal 401 and the first input / output terminal 432, and the first input terminal 401 and the third input / output terminal 434 are not connected to each other, and the second input / output terminal 433 and the ground terminal 400 are not connected.

[0124] As a result, in the high-frequency module 1, when a reception signal in the first communication band is received, the switch 43 is set to the first state, thereby reducing leakage of the transmission signal in the first communication band to the low-noise amplifier 51. Also, in the high-frequency module 1, when a reception signal in the second communication band is received, the switch 43 is set to the second state, thereby reducing loss of the reception signal in the second communication band.

[0125] (Embodiment 5) (1) Operation The high-frequency module 1 according to the fifth embodiment has the same configuration as the high-frequency module 1 according to the fourth embodiment. In the high-frequency module 1 according to the fifth embodiment, the switch 43 is switchable to a third state and a fourth state in addition to the first state and the second state.

[0126] 8A, the first input terminal 401 and the second input / output terminal 433 are connected, and the first input / output terminal 432 and the third input / output terminal 434 are connected. In the third state, the second input terminal 402 and the first input / output terminal 432, and the second input terminal 402 and the second input / output terminal 433 are not connected to each other, and the third input / output terminal 434 and the output terminal 431 are not connected. That is, in the third state, a series circuit of the first inductor 18a and the second inductor 19a is connected between the first filter 131 and the low-noise amplifier 51.

[0127] 8B, the second input terminal 402 and the first input / output terminal 432, and the second input terminal 402 and the second input / output terminal 433 are connected, and the third input / output terminal 434 and the output terminal 431 are connected. In the fourth state, the first input terminal 401 and the second input / output terminal 433 are not connected, and the first input / output terminal 432 and the third input / output terminal 434 are not connected. That is, in the fourth state, a parallel circuit of the first inductor 18a and the second inductor 19a is connected between the second filter 141 and the low-noise amplifier 51.

[0128] This enables the high-frequency module 1 to easily change the characteristics of the circuit between the first input terminal 401 or the second input terminal 402 of the switch 40 and the low-noise amplifier 51 when receiving a reception signal in the first communication band and when receiving a reception signal in the second communication band.

[0129] In the high-frequency module 1 according to the fifth embodiment, the switch 43 may be in the third state when a reception signal in the first communication band is received, and in the second state when a reception signal in the second communication band is received. Similarly, in the high-frequency module 1 according to the fifth embodiment, the switch 43 may be in the first state when a reception signal in the first communication band is received, and in the fourth state when a reception signal in the second communication band is received.

[0130] Furthermore, in the high-frequency module 1 according to the fifth embodiment, when a reception signal in the first communication band is received, the same connections as in the fourth state may be made. That is, when a reception signal in the first communication band is received, the first input terminal 401 and the first input / output terminal 432 and the first input terminal 401 and the second input / output terminal 433 may be connected, and the third input / output terminal 434 and the output terminal 431 may be connected. In this case, the second input terminal 402 and the second input / output terminal 433 are not connected, and the first input / output terminal 432 and the third input / output terminal 434 are not connected.

[0131] Furthermore, in the high-frequency module 1 according to the fifth embodiment, when receiving a reception signal in the second communication band, the same connections as in the third state may be made. That is, the second input terminal 402 and the second input / output terminal 433 may be connected, and the first input / output terminal 432 and the third input / output terminal 434 may be connected. In this case, the first input terminal 401 and the first input / output terminal 432, and the first input terminal 401 and the second input / output terminal 433 are not connected to each other, and the third input / output terminal 434 and the output terminal 431 are not connected.

[0132] As a result, in the high-frequency module 1, it is possible to at least one of reduce leakage of the transmission signal in the first communication band to the low-noise amplifier 51 and reduce loss of the reception signal in the second communication band when receiving a reception signal in the first communication band and when receiving a reception signal in the second communication band. Furthermore, it is possible to optimize the reception characteristics when receiving a reception signal in the first communication band and when receiving a reception signal in the second communication band.

[0133] (2) Effects In the high-frequency module 1 of embodiment 5, the switch 43 is switchable to a state in which the first input terminal 401 or the second input terminal 402 is connected to the second input / output terminal 433, the first input / output terminal 432 is connected to the third input / output terminal 434, and the first input terminal 401 or the second input terminal 402 is not connected to the first input / output terminal 432, and the first input terminal 401 or the second input terminal 402 is not connected to the second input / output terminal 433, and the third input / output terminal 434 is not connected to the output terminal 431. In the high-frequency module 1 according to the fifth embodiment, the switch 43 is switchable between a state in which the first input terminal 401 or the second input terminal 402 is connected to the first input / output terminal 432, and the first input terminal 401 or the second input terminal 402 is connected to the second input / output terminal 433, the third input / output terminal 434 is connected to the output terminal 431, and the first input terminal 401 or the second input terminal 402 is not connected to the second input / output terminal 433, and the first input / output terminal 432 is not connected to the third input / output terminal 434. This makes it possible for the high-frequency module 1 to at least one of reduce leakage of the transmission signal of the first communication band to the low-noise amplifier 51 and reduce loss of the reception signal of the second communication band when receiving a reception signal of the first communication band and when receiving a reception signal of the second communication band. Furthermore, it is possible to optimize the reception characteristics when receiving a reception signal of the first communication band and when receiving a reception signal of the second communication band.

[0134] (Embodiment 6) (1) Operation The high-frequency module 1 according to the sixth embodiment has the same configuration as the high-frequency module 1 according to the fourth embodiment. In the high-frequency module 1 according to the sixth embodiment, the switch 43 is switchable to a fifth state and a sixth state in addition to the first state and the second state.

[0135] 9A, in the fifth state, the first input terminal 401 and the first input / output terminal 432 are connected. In the fifth state, the second input terminal 402 and the second input / output terminal 433 are not connected, and the third input / output terminal 434 and the output terminal 431 are not connected. That is, in the fifth state, the first inductor 18a is connected between the first filter 131 and the low-noise amplifier 51.

[0136] 9B, in the sixth state, the second input terminal 402 and the second input / output terminal 433 are connected, and the third input / output terminal 434 and the output terminal 431 are connected. In the sixth state, the first input terminal 401 and the first input / output terminal 432 are not connected. That is, in the sixth state, the second inductor 19a is connected between the second filter 141 and the low-noise amplifier 51.

[0137] This enables the high-frequency module 1 to easily change the characteristics of the circuit between the first input terminal 401 or the second input terminal 402 of the switch 40 and the low-noise amplifier 51 when receiving a reception signal in the first communication band and when receiving a reception signal in the second communication band.

[0138] In the high-frequency module 1 according to the sixth embodiment, the switch 43 may be in the fifth state when a reception signal in the first communication band is received, and in the second state when a reception signal in the second communication band is received. Similarly, in the high-frequency module 1 according to the fifth embodiment, the switch 43 may be in the first state when a reception signal in the first communication band is received, and in the sixth state when a reception signal in the second communication band is received.

[0139] In addition, in the high-frequency module 1 according to the sixth embodiment, when receiving a reception signal in the second communication band, a connection similar to that in the fifth state may be made. That is, the second input terminal 402 and the first input / output terminal 432 may be connected. In this case, the first input terminal 401 and the second input / output terminal 433 are not connected, and the third input / output terminal 434 and the output terminal 431 are not connected.

[0140] Furthermore, in the high-frequency module 1 according to the sixth embodiment, when receiving a reception signal in the first communication band, the same connections as in the sixth state may be made. That is, the first input terminal 401 and the second input / output terminal 433 may be connected, and the third input / output terminal 434 and the output terminal 431 may be connected. In this case, the second input terminal 402 and the first input / output terminal 432 are not connected.

[0141] As a result, in the high-frequency module 1, it is possible to at least one of reduce leakage of the transmission signal in the first communication band to the low-noise amplifier 51 and reduce loss of the reception signal in the second communication band when receiving a reception signal in the first communication band and when receiving a reception signal in the second communication band. Furthermore, it is possible to optimize the reception characteristics when receiving a reception signal in the first communication band and when receiving a reception signal in the second communication band.

[0142] (2) Effects In the high-frequency module 1 according to the sixth embodiment, the switch 43 is switchable to a state in which the first input terminal 401 or the second input terminal 402 is connected to the first input / output terminal 432, the first input terminal 401 or the second input terminal 402 is not connected to the second input / output terminal 433, and the third input / output terminal 434 is not connected to the output terminal 431. In addition, in the high-frequency module 1 according to the sixth embodiment, the switch 43 is switchable to a state in which the first input terminal 401 or the second input terminal 402 is connected to the second input / output terminal 433, the third input / output terminal 434 is connected to the output terminal 431, and the first input terminal 401 or the second input terminal 402 is not connected to the first input / output terminal 432. As a result, in the high-frequency module 1, when receiving a reception signal in the first communication band and when receiving a reception signal in the second communication band, it is possible to at least one of reduce leakage of a transmission signal in the first communication band to the low-noise amplifier 51 and reduce loss of a reception signal in the second communication band. Furthermore, it is possible to optimize the reception characteristics when receiving a reception signal in the first communication band and when receiving a reception signal in the second communication band.

[0143] (Embodiment 7) (1) Composition 10 and 11, the high-frequency module 1 according to the seventh embodiment further includes a third inductor 18b and a fourth inductor 19b in addition to the configuration of the high-frequency module 1 according to the fourth embodiment, and includes a switch 44 instead of the switch 43. Note that the high-frequency module 1 according to the seventh embodiment includes all the configuration of the high-frequency module 1 according to the fourth embodiment except for the switch 43, and therefore a description of the same configuration will be omitted.

[0144] The switch 44 is a switch for selecting whether each of the first filter 131 of the duplexer 13 and the second filter 141 of the duplexer 14 is connected to the first inductor 18a, the second inductor 19a, the third inductor 18b, the fourth inductor 19b, or the low-noise amplifier 51. The switch 44 is a switch for selecting whether each of the first inductor 18a, the second inductor 19a, the third inductor 18b, and the fourth inductor 19b is connected to each other. The switch 44 is a switch for selecting whether the ground electrode is connected to the first inductor 18a, the second inductor 19a, the third inductor 18b, or the fourth inductor 19b. The switch 44 can be configured, for example, by a DPDT (Dual Pole Dual Throw) type switch.

[0145] The switch 44 has a first input terminal 401, a second input terminal 402, and a ground terminal 400. The first input terminal 401 is connected to the first filter 131 of the duplexer 13. The second input terminal 402 is connected to the second filter 141 of the duplexer 14. The ground terminal 400 is connected to a ground electrode.

[0146] The switch 44 further includes an output terminal 431, a first input / output terminal 432, a second input / output terminal 433, a third input / output terminal 434, a fourth input / output terminal 441, a fifth input / output terminal 442, and a sixth input / output terminal 443. The output terminal 431 is connected to the low-noise amplifier 51. The first input / output terminal 432 is connected to the first inductor 18a. That is, the first inductor 18a is connected between the path between the output terminal 431 and the low-noise amplifier 51 and the first input / output terminal 432. The second input / output terminal 433 and the third input / output terminal 434 are connected to the second inductor 19a. More specifically, the second inductor 19a is connected between the second input / output terminal 433 and the third input / output terminal 434. The fourth input / output terminal 441 is connected to the third inductor 18b. That is, the third inductor 18b is connected between the path between the output terminal 431 and the low-noise amplifier 51 and the fourth input / output terminal 441. The fifth input / output terminal 442 and the sixth input / output terminal 443 are connected to the fourth inductor 19b. More specifically, the fourth inductor 19b is connected between the fifth input / output terminal 442 and the sixth input / output terminal 443.

[0147] The switch 44 is switchable between a first state and a seventh state.

[0148] 10, the first input terminal 401 and the first input / output terminal 432, and the first input terminal 401 and the third input / output terminal 434 are connected, and the second input / output terminal 433 and the ground terminal 400 are connected. In the first state, the second input terminal 402 and the fourth input / output terminal 441, and the second input terminal 402 and the sixth input / output terminal 443 are not connected to each other, and the fifth input / output terminal 442 and the ground terminal 400 are not connected. That is, in the first state, the first inductor 18a is connected between the first filter 131 and the low-noise amplifier 51. Also, in the first state, the path between the first inductor 18a and the first filter 131 is connected to the ground electrode via the second inductor 19a.

[0149] 11, in the seventh state, the second input terminal 402 and the fourth input / output terminal 441, and the second input terminal 402 and the sixth input / output terminal 443 are connected, and the fifth input / output terminal 442 and the ground terminal 400 are connected. In the seventh state, the first input terminal 401 and the first input / output terminal 432, and the first input terminal 401 and the third input / output terminal 434 are not connected to each other, and the second input / output terminal 433 and the ground terminal 400 are not connected. That is, in the seventh state, the third inductor 18b is connected between the second filter 141 and the low-noise amplifier 51. In the second state, the path between the third inductor 18b and the second filter 141 is connected to the ground electrode via the fourth inductor 19b.

[0150] The switch 44 is controlled by, for example, the RF signal processing circuit 21 of the signal processing circuit 2.

[0151] (2) Operation 10, the first input terminal 401 is connected to the first input / output terminal 432, and the first input terminal 401 is connected to the third input / output terminal 434, and the second input / output terminal 433 is connected to the ground terminal 400. That is, in the first state, the first inductor 18a is connected between the first filter 131 and the low-noise amplifier 51. Also, in the first state, the path between the first inductor 18a and the first filter 131 is connected to the ground electrode via the second inductor 19a.

[0152] 11, in the seventh state, the second input terminal 402 is connected to the fourth input / output terminal 441, and the second input terminal 402 is connected to the sixth input / output terminal 443, and the fifth input / output terminal 442 is connected to the ground terminal 400. That is, in the second state, the third inductor 18b is connected between the second filter 141 and the low-noise amplifier 51. In the second state, the path between the third inductor 18b and the second filter 141 is connected to the ground electrode via the fourth inductor 19b.

[0153] This enables the high-frequency module 1 to easily change the characteristics of the circuit between the first input terminal 401 or the second input terminal 402 of the switch 40 and the low-noise amplifier 51 when receiving a reception signal in the first communication band and when receiving a reception signal in the second communication band.

[0154] In addition, in the high-frequency module 1 according to the seventh embodiment, when a reception signal in the second communication band is received, the switch 44 may be set to the second state, and when a reception signal in the first communication band is received, a connection similar to that in the seventh state may be made. That is, when a reception signal in the first communication band is received, the first input terminal 401 and the fourth input / output terminal 441, and the first input terminal 401 and the sixth input / output terminal 443 may be connected, and the fifth input / output terminal 442 and the ground terminal 400 may be connected. In this case, the second input terminal 402 and the first input / output terminal 432, and the second input terminal 402 and the third input / output terminal 434 are not connected to each other, and the second input / output terminal 433 and the ground terminal 400 are not connected.

[0155] This makes it possible for the high-frequency module 1 to reduce leakage of the transmission signal of the first communication band to the low-noise amplifier 51 when receiving a reception signal of the first communication band and when receiving a reception signal of the second communication band. Furthermore, it becomes possible to optimize the reception characteristics when receiving a reception signal of the first communication band and when receiving a reception signal of the second communication band.

[0156] (3) Effects The high-frequency module 1 according to the seventh embodiment further includes a third inductor 18b and a fourth inductor 19b. The switch 44 has a fourth input / output terminal 441, a fifth input / output terminal 442, and a sixth input / output terminal 443. The third inductor 18b is connected between the fourth input / output terminal 441 and a path between the input terminal and the output terminal 431 of the low-noise amplifier 51. The fourth inductor 19b is connected between the fifth input / output terminal 442 and the sixth input / output terminal 443. The switch 44 is switchable to a state in which the first input terminal 401 or the second input terminal 402 is connected to the fourth input / output terminal 441, and the first input terminal 401 or the second input terminal 402 is connected to the sixth input / output terminal 443, the fifth input / output terminal 442 is connected to the ground terminal 400, and the first input terminal 401 or the second input terminal 402 is not connected to the first input / output terminal 432, and the first input terminal 401 or the second input terminal 402 is not connected to the third input / output terminal 434, and the second input / output terminal 433 is not connected to the ground terminal 400.

[0157] This makes it possible for the high-frequency module 1 to reduce leakage of the transmission signal of the first communication band to the low-noise amplifier 51 when receiving a reception signal of the first communication band and when receiving a reception signal of the second communication band. Furthermore, it becomes possible to optimize the reception characteristics when receiving a reception signal of the first communication band and when receiving a reception signal of the second communication band.

[0158] (Modification) Modifications of the embodiment will be described below.

[0159] As shown in FIG. 13, the high-frequency module 1 according to the first to seventh embodiments may include a low-noise amplifier 51 and a switch 40 instead of the IC chip 73 and the second inductor 19, and may further include an IC chip 73a including the second inductor 19. The second inductor 19 is, for example, an IPD (Integrated Passive Device) formed on a silicon substrate by a thin-film process. That is, the second inductor 19 is formed inside the IC chip 73a, not on the first main surface 61 of the substrate 6. This allows the second inductor 19 to be miniaturized, and allows the switch 40 to be connected inside the IC chip 73a, thereby reducing loss of the received signal. Note that the IC chip 73a may include a switch 43 or 44 instead of the switch 40, and may include a second inductor 19a instead of the second inductor 19.

[0160] Furthermore, in the high-frequency modules 1 according to the first to seventh embodiments, the first inductor 18 may overlap with the IC chip 73 including 40, 43, or 44 in a plan view from the third direction D3. Here, "the first inductor 18 or 18a overlaps with the IC chip 73 in a plan view from the third direction D3" means that at least a part of the first inductor 18 or 18a overlaps with at least a part of the IC chip 73 in a plan view from the third direction D3. This makes it possible to shorten the length of the wiring between the first inductor 18 or 18a and the switch 40, 43, or 44, and to reduce loss of the received signal of the high-frequency module 1.

[0161] Moreover, the high-frequency modules 1 according to the first to seventh embodiments may be high-frequency modules for reception that do not include the transmission filters 132 and 142, the switch 15, the matching circuit 16, and the power amplifier 17.

[0162] Furthermore, in the high-frequency module 1 according to the seventh embodiment, the switch 44 may be capable of connection similar to any one of the first to sixth states of the switch 43 in the high-frequency modules 1 according to each of the third to sixth embodiments. Similarly, in the high-frequency module 1 according to the sixth embodiment, the switch 43 may be capable of connection similar to the third or fourth state of the switch 43 in the high-frequency module 1 according to the fourth embodiment.

[0163] Furthermore, the high-frequency module 1 according to the first to seventh embodiments can receive reception signals in three or more communication bands, and the switches 40, 43, and 44, or the first switch 41 and the second switch 42, 42a, may switch between three or more states depending on which communication band the reception signal is to be received in. The three or more states are the above-mentioned first state to seventh state, or states in which a terminal connected to a receiving filter is connected instead of the first input terminal 401 or the second input terminal 402 in the above-mentioned first state to seventh state.

[0164] Moreover, the high-frequency module 1 according to the third embodiment may include, instead of the first switch 41 and the second switch 42a, a single switch capable of making a similar connection.

[0165] Furthermore, in the high-frequency modules 1 according to the fourth to seventh embodiments, in one or more of the first to seventh states of the switch 43 or 44, the second input / output terminal 433 and the third input / output terminal 434 may be switched. This is because the second input / output terminal 433 and the third input / output terminal 434 each correspond to both ends of the second inductor 19a, and their uses may be reversed. Similarly, in the high-frequency module 1 according to the seventh embodiment, in one or more states of the switch 44, the fifth input / output terminal 442 and the sixth input / output terminal 443 may be switched.

[0166] (Aspect) The high-frequency module (1) according to the first aspect includes a low-noise amplifier (51), a switch (40), a first inductor (18), a second inductor (19), a first filter (131), and a second filter (141). The switch (40) has a first input terminal (401), a second input terminal (402), an output terminal (403), an input / output terminal (404), and a ground terminal (400). The first inductor (18) is connected between the low-noise amplifier (51) and the output terminal (403). The second inductor (19) is connected between the path between the first inductor (18) and the output terminal (403) and the input / output terminal (404). The first filter (131) is connected to the first input terminal (401) and has a pass band including the reception band of the first communication band. The second filter (141) is connected to the second input terminal (402) and has a pass band including the reception band of the second communication band. The second communication band has a wider transmission / reception gap (G1) than the first communication band. The switch (40) is switchable between a first state and a second state. In the first state of the switch (40), the first input terminal (401) and the output terminal (403) are connected, the input / output terminal (404) and the ground terminal (400) are connected, and the second input terminal (402) is not connected to the input / output terminal (404). In the second state of the switch (40), the second input terminal (402) and the input / output terminal (404) are connected, the first input terminal (401) and the output terminal (403) are not connected, and the input / output terminal (404) and the ground terminal (400) are not connected.

[0167] According to the high-frequency module (1) of the above aspect, when a reception signal in the first communication band is received, the switch (40) is set to the first state, thereby reducing leakage of the transmission signal in the first communication band to the low-noise amplifier (51). Moreover, in the high-frequency module (1), when a reception signal in the second communication band is received, the switch (40) is set to the second state, thereby reducing loss of the reception signal in the second communication band.

[0168] In the high-frequency module (1) according to the second aspect, in the first aspect, the switch (40) includes a first switch (41) and a second switch (42). The first switch (41) has a first input terminal (401) and an output terminal (403), and can switch between connection and non-connection between the first input terminal (401) and the output terminal (403). The second switch (42) has a second input terminal (402), an input / output terminal (404), and a ground terminal (400), and can connect the input / output terminal (404) to the second input terminal (402) or the ground terminal (400). In the first state, the first switch (41) connects the first input terminal (401) and the output terminal (403). In the first state, the second switch (42) connects the input / output terminal (404) to the ground terminal (400) and does not connect the second input terminal (402) to the input / output terminal (404). In the first state, the first switch (41) does not connect the first input terminal (401) to the output terminal (403). In the second state, the second switch (42) connects the second input terminal (402) to the input / output terminal (404) and does not connect the input / output terminal (404) to the ground terminal (400).

[0169] According to the high-frequency module (1) of the above aspect, when receiving a reception signal in the first communication band, leakage of a transmission signal in the first communication band to the low-noise amplifier (51) can be reduced. Moreover, in the high-frequency module (1), when receiving a reception signal in the second communication band, loss of the reception signal in the second communication band can be reduced. Moreover, in the high-frequency module (1), the switch (40) is separated into the first switch (41) and the second switch (42), so that loss in the switch (40) can be reduced.

[0170] The high-frequency module (1) according to the third aspect is the high-frequency module (1) according to either the first or second aspect, further including a second low-noise amplifier (512) and a third inductor (189). The second low-noise amplifier (512) is different from the first low-noise amplifier (51). The third inductor (189) is connected to the second low-noise amplifier (512). The third inductor (189) is connected between the second low-noise amplifier (512) and a path between the second inductor (19) and the first inductor (18).

[0171] According to the high-frequency module (1) of the above aspect, in receiving a communication band different from the first and second communication bands, the second low-noise amplifier (512) can be used, and the third inductor (189) and the second inductor (19) can be connected between the second low-noise amplifier (512) and the receiving path of that communication band. Therefore, it is possible to optimize the receiving characteristics of the third communication band.

[0172] A high-frequency module (1) according to a fourth aspect includes a low-noise amplifier (51), a switch (43; 44), a first inductor (18a), a second inductor (19a), a first filter (131), and a second filter (141). The switch (43; 44) has a first input terminal (401), a second input terminal (402), an output terminal (431), a first input / output terminal (432), a second input / output terminal (433), a third input / output terminal (434), and a ground terminal (400). The first inductor (18a) is connected between the path between the low-noise amplifier (51) and the output terminal (431) and the first input / output terminal (432). The second inductor (19a) is connected between the second input / output terminal (433) and the third input / output terminal (434). The first filter (131) is connected to the first input terminal (401) and has a pass band including the reception band of the first communication band. The second filter (141) is connected to the second input terminal (402) and has a pass band including the reception band of the second communication band. The second communication band has a wider transmission / reception gap (G1) than the first communication band. The switches (43; 44) are switchable between a first state and a second state. In the first state of the switch (43; 44), the first input terminal (401) is connected to the first input / output terminal (432), and the first input terminal (401) is connected to the third input / output terminal (434), the second input / output terminal (433) is connected to the ground terminal (400), the second input terminal (402) is not connected to the second input / output terminal (433), the third input / output terminal (434) is not connected to the output terminal (431), and the first input / output terminal (432) is not connected to the ground terminal (400). In the second state of the switch (43; 44), the second input terminal (402) is connected to the second input / output terminal (433), the third input / output terminal (434) is connected to the output terminal (431), the first input / output terminal (432) is connected to the ground terminal (400), the first input terminal (401) is not connected to the first input / output terminal (432), and the first input terminal (401) is not connected to the third input / output terminal (434), and the second input / output terminal (433) is not connected to the ground terminal (400).

[0173] According to the high-frequency module (1) of the above aspect, when a reception signal in the first communication band is received, the switch (43) is set to the first state, thereby reducing leakage of the transmission signal in the first communication band to the low-noise amplifier (51). Moreover, in the high-frequency module (1), when a reception signal in the second communication band is received, the switch (43) is set to the second state, thereby reducing loss of the reception signal in the second communication band.

[0174] In the high-frequency module (1) according to the fifth aspect, in the fourth aspect, the switch (43; 44) connects the first input terminal (401) or the second input terminal (402) to the second input / output terminal (433), connects the first input / output terminal (432) to the third input / output terminal (434), and does not connect the first input terminal (401) or the second input terminal (402) to the first input / output terminal (432), and does not connect the first input terminal (401) or the second input terminal (402) to the second input / output terminal (433), and does not connect the third input / output terminal (434) to the output terminal (4 and a state in which the first input terminal (401) or the second input terminal (402) is connected to the first input / output terminal (432), and the first input terminal (401) or the second input terminal (402) is connected to the second input / output terminal (433), the third input / output terminal (434) is connected to the output terminal (431), and the first input terminal (401) or the second input terminal (402) is not connected to the second input / output terminal (433), and the first input / output terminal (432) is not connected to the third input / output terminal (434).

[0175] According to the high-frequency module (1) of the above aspect, when receiving a reception signal in the first communication band and when receiving a reception signal in the second communication band, it is possible to at least one of reduce leakage of the transmission signal in the first communication band to the low-noise amplifier (51) and reduce loss of the reception signal in the second communication band. Furthermore, it is possible to optimize the reception characteristics when receiving a reception signal in the first communication band and when receiving a reception signal in the second communication band.

[0176] In the high-frequency module (1) according to the sixth aspect, in either the fourth or fifth aspect, the switch (43; 44) can be further switched to at least one of a state in which the first input terminal (401) or the second input terminal (402) is connected to the first input / output terminal (432), and the first input terminal (401) or the second input terminal (402) is not connected to the second input / output terminal (433), and the third input / output terminal (434) is not connected to the output terminal (431), and a state in which the first input terminal (401) or the second input terminal (402) is connected to the second input / output terminal (433), the third input / output terminal (434) is connected to the output terminal (431), and the first input terminal (401) or the second input terminal (402) is not connected to the first input / output terminal (432).

[0177] According to the high-frequency module (1) of the above aspect, when receiving a reception signal in the first communication band and when receiving a reception signal in the second communication band, it is possible to at least one of reduce leakage of the transmission signal in the first communication band to the low-noise amplifier (51) and reduce loss of the reception signal in the second communication band. Furthermore, it is possible to optimize the reception characteristics when receiving a reception signal in the first communication band and when receiving a reception signal in the second communication band.

[0178] The high-frequency module (1) according to a seventh aspect is any one of the fourth to sixth aspects, further including a third inductor (18b) and a fourth inductor (19b). The switch (44) further includes a fourth input / output terminal (441), a fifth input / output terminal (442), and a sixth input / output terminal (443). The third inductor (18b) is connected between the path between the low-noise amplifier (51) and the output terminal (431) and the fourth input / output terminal (441). The fourth inductor (19b) is connected between the fifth input / output terminal (442) and the sixth input / output terminal (443). The switch (44) can be further switched to a state in which the first input terminal (401) or the second input terminal (402) is connected to the fourth input / output terminal (441), and the first input terminal (401) or the second input terminal (402) is connected to the sixth input / output terminal (443), and the fifth input / output terminal (442) is connected to the ground terminal (400), and the first input terminal (401) or the second input terminal (402) is not connected to the first input / output terminal (432), and the first input terminal (401) or the second input terminal (402) is not connected to the third input / output terminal (434), and the second input terminal (433) is not connected to the ground terminal (400).

[0179] According to the high-frequency module (1) of the above aspect, when receiving a reception signal in the first communication band and when receiving a reception signal in the second communication band, it is possible to reduce leakage of a transmission signal in the first communication band to the low-noise amplifier (51). Furthermore, it is possible to optimize reception characteristics when receiving a reception signal in the first communication band and when receiving a reception signal in the second communication band.

[0180] The high-frequency module (1) according to an eighth aspect is any one of the first to seventh aspects, further comprising a substrate (6). The substrate (6) has a first main surface (61) and a second main surface (62) facing each other. The first inductor (18; 18a) and the second inductor (19; 19a) are adjacently disposed on the first main surface (61) of the substrate (6). The direction (A1) of the winding axis of the first inductor (18; 18a) and the direction (A2) of the winding axis of the second inductor (19; 19a) are parallel to each other.

[0181] According to the high-frequency module (1) relating to the above aspect, when both the first inductor (18) and the second inductor (19) are used, it is possible to reduce loss of a received signal in the first communication band or a received signal in the second communication band.

[0182] A high-frequency module (1) according to a ninth aspect is any of the first to eighth aspects, wherein the transmission signal in the first communication band is a transmission signal of power class 2. The transmission signal in the second communication band is a transmission signal having a maximum output power lower than that of power class 2.

[0183] According to the high-frequency module (1) of the above aspect, when receiving a reception signal in the first communication band, it is possible to reduce leakage of a transmission signal in the first communication band to the low-noise amplifier (51), and when receiving a reception signal in the second communication band, it is possible to reduce loss of the reception signal in the second communication band.

[0184] The high-frequency module (1) according to a tenth aspect is the high-frequency module (1) according to any one of the first to ninth aspects, further comprising a transmission filter (132). The transmission filter (132) has a pass band including a transmission band of the first communication band. The first filter (131) and the transmission filter (132) configure a duplexer (13).

[0185] The high-frequency module (1) according to the above aspect is capable of both transmitting a transmission signal and receiving a reception signal in the first communication band, and can reduce the effect of the transmission signal in the first communication band on the reception operation in the first communication band.

[0186] The high-frequency module (1) according to an eleventh aspect is the high-frequency module (1) according to any one of the first to tenth aspects, further including a transmission filter (142). The transmission filter (142) has a pass band including a transmission band of the first communication band. The second filter (141) and the transmission filter (142) configure a duplexer (14).

[0187] The high-frequency module (1) according to the above aspect can handle both the transmission of a transmission signal and the reception of a reception signal in the second communication band, and can reduce the effect of the transmission signal in the second communication band on the reception operation in the second communication band.

[0188] A high-frequency module (1) according to a twelfth aspect is any one of the first to eleventh aspects, further comprising a substrate (6). The substrate (6) has a first main surface (61) and a second main surface (62) facing each other. The first inductor (18; 18a) and the second inductor (19; 19a) are disposed on the first main surface (61) of the substrate (6). In a plan view in the thickness direction (D3) of the substrate (6), the first inductor (18; 18a) is larger than the second inductor (19; 19a).

[0189] According to the high-frequency module (1) of the above aspect, it is possible to reduce loss of the received signal when the first inductor (18; 18a) is connected between the low-noise amplifier (51) and the first filter (131) or the second filter (141). Also, when the first inductor (18; 18a) and the second inductor (19; 19a) are connected between the low-noise amplifier (51) and the first filter (131) or the second filter (141), an increase in loss of the received signal is unlikely to occur because the effect of the second inductor (19; 19a) is low.

[0190] The high-frequency module (1) according to a thirteenth aspect is any of the first to twelfth aspects, further comprising an IC chip (73a) including a second inductor (19) and a switch (40; 42; 43).

[0191] According to the high-frequency module (1) of the above aspect, the second inductor (19; 19a) can be made smaller in size and can be connected to the switch (40; 42; 43) inside the IC chip (73a), thereby reducing loss of the received signal.

[0192] A high-frequency module (1) according to a fourteenth aspect is any of the first to twelfth aspects, further comprising a substrate (6) and an IC chip (73). The substrate (6) has a first main surface (61) and a second main surface (62) facing each other. The IC chip (73) includes a low-noise amplifier (51). The first inductor (18; 18a) is disposed on the first main surface (61) of the substrate (6). The IC chip (73) is disposed on the second main surface (62) of the substrate (6). In a plan view in a thickness direction (D3) of the substrate (6), the first inductor (18; 18a) and the IC chip (73) overlap each other.

[0193] According to the high-frequency module (1) of the above aspect, the length of the wiring section between the first inductor (18; 18a) and the low-noise amplifier (51) can be shortened, thereby reducing loss of the received signal of the high-frequency module (1).

[0194] In a high-frequency module (1) according to a fifteenth aspect, in the fourteenth aspect, the IC chip (73) further includes a switch (40; 42; 43). The second inductor (19; 19a) is disposed on a first main surface (61) of the substrate (6). The IC chip (73) is disposed on a second main surface (62) of the substrate (6). In a plan view in a thickness direction (D3) of the substrate (6), the second inductor (19; 19a) and the IC chip (73) overlap each other.

[0195] A high-frequency module (1) according to a sixteenth aspect is any one of the first to twelfth aspects, further comprising a substrate (6) and an IC chip (73). The substrate (6) has a first main surface (61) and a second main surface (62) facing each other. The IC chip (73) includes a low-noise amplifier (51) and a switch (40; 42; 43). The second inductor (19; 19a) is disposed on the first main surface (61) of the substrate (6). The IC chip (73) is disposed on the second main surface (62) of the substrate (6). In a plan view in a thickness direction (D3) of the substrate (6), the second inductor (19; 19a) and the IC chip (73) overlap each other.

[0196] According to the high-frequency module (1) of the fifteenth or sixteenth aspect, the length of the wiring section between the second inductor (19; 19a) and the switch (40; 42; 43) can be shortened, thereby reducing loss of the received signal of the high-frequency module (1).

[0197] A communication device (100) according to a seventeenth aspect includes a high-frequency module (1) according to any one of the first to sixteenth aspects, and a signal processing circuit (2) connected to the high-frequency module (1).

[0198] According to the communication device (100) of the above aspect, it is possible to change the characteristics of the circuit between the low-noise amplifier (51) and the first filter (131) when receiving a reception signal in the first communication band, and the characteristics of the circuit between the low-noise amplifier (51) and the second filter (141) when receiving a reception signal in the second communication band. [Explanation of symbols]

[0199] 1 High frequency module 10 Switch 101 Common terminal 102, 103 Selection terminal 11, 12, 16 matching circuit 13 Duplexer 131 First Filter 132 Transmission Filter 14 Duplexer 141 Second Filter 142 Transmission Filter 15 Switch 150 Common terminal 151 Selection terminal 152 Selection terminal 17 Power Amplifier 18, 18a First inductor 181 1st end 182 2nd end 18b Third inductor 189 Third Inductor 19, 19a Second inductor 191 1st end 192 2nd end 19b 4th inductor 40, 43, 44 Switches 400 Ground Terminal 401 First input terminal 402 Second input terminal 403 Output terminal 404 Input / output terminal 409 3rd input terminal 431 Output terminal 432 1st input / output terminal 433 2nd input / output terminal 434 3rd input / output terminal 441 4th input / output terminal 442 5th input / output terminal 443 6th input / output terminal 41 First Switch 42, 42a Second switch 51 1st low noise amplifier (low noise amplifier) 512 2nd Low Noise Amplifier 52 External connection terminal 521 Antenna terminal 522 Signal input terminal 523 Signal output terminal 6 Substrate 61 First main surface 62 Second main surface 71, 73a, 72, 73 IC chip 100 Communication equipment 2. Signal Processing Circuit 21 RF signal processing circuit 22 Baseband signal processing circuit 3 Antennas A1 Winding axis direction A2 Winding axis direction D1 1st direction D2 2nd direction D3 Third direction f1, f11, f12 maximum frequency f2, f21, f22 minimum frequency G1, G11, G12 Transmit / Receive Gap Rx1, Rx2 receiving band Tx1, Tx2 transmit band

Claims

1. A low noise amplifier a switch having a first input terminal, a second input terminal, an output terminal, an input / output terminal, and a ground terminal; a first inductor connected between the low noise amplifier and the output terminal; a second inductor connected between the first inductor and the output terminal and the input / output terminal; a first filter connected to the first input terminal and having a passband that includes a receive band of a first communications band; a second filter connected to the second input terminal and having a passband including a reception band of a second communication band having a wider transmission / reception gap than the first communication band; The switch is A first state and a second state can be switched, In the first state, the first input terminal and the output terminal are connected, the input / output terminal and the ground terminal are connected, and the second input terminal is not connected to the input / output terminal; In the second state, the second input terminal and the input / output terminal are connected, the first input terminal and the output terminal are not connected, and the input / output terminal and the ground terminal are not connected. High frequency module.

2. The switch is a first switch having the first input terminal and the output terminal and capable of switching between connection and disconnection of the first input terminal and the output terminal; a second switch having the second input terminal, the input / output terminal, and the ground terminal, the second switch being capable of connecting the input / output terminal to the second input terminal or the ground terminal; Including, In the first state, the first switch connects the first input terminal and the output terminal; the second switch connects the input / output terminal and the ground terminal, and does not connect the second input terminal and the input / output terminal; In the second state, the first switch does not connect the first input terminal and the output terminal; the second switch connects the second input terminal to the input / output terminal and does not connect the input / output terminal to the ground terminal; The high frequency module according to claim 1 .

3. a second low-noise amplifier different from the first low-noise amplifier; a third inductor connected to the second low-noise amplifier; the third inductor is connected between the second low-noise amplifier and a path between the second inductor and the first inductor; The high frequency module according to claim 1 .

4. A low noise amplifier a switch having a first input terminal, a second input terminal, an output terminal, a first input / output terminal, a second input / output terminal, a third input / output terminal, and a ground terminal; a first inductor connected between a path between the low noise amplifier and the output terminal and the first input / output terminal; a second inductor connected between the second input / output terminal and the third input / output terminal; a first filter connected to the first input terminal and having a passband that includes a receive band of a first communications band; a second filter connected to the second input terminal and having a passband including a reception band of a second communication band having a wider transmission / reception gap than the first communication band; The switch is A first state and a second state can be switched, In the first state, the first input terminal and the first input / output terminal, and the first input terminal and the third input / output terminal are connected, the second input / output terminal and the ground terminal are connected, the second input terminal and the second input / output terminal are not connected, the third input / output terminal and the output terminal are not connected, and the first input / output terminal and the ground terminal are not connected, In the second state, the second input terminal and the second input / output terminal are connected, the third input / output terminal and the output terminal are connected, the first input / output terminal and the ground terminal are connected, the first input terminal and the first input / output terminal, and the first input terminal and the third input / output terminal are not connected to each other, and the second input / output terminal and the ground terminal are not connected. High frequency module.

5. The switch is a state in which the first input terminal or the second input terminal is connected to the second input / output terminal, the first input / output terminal is connected to the third input / output terminal, and the first input terminal or the second input terminal is not connected to the first input / output terminal, and the first input terminal or the second input terminal is not connected to the second input / output terminal, and the third input / output terminal is not connected to the output terminal; a state in which the first input terminal or the second input terminal is connected to the first input / output terminal, and the first input terminal or the second input terminal is connected to the second input / output terminal, the third input / output terminal is connected to the output terminal, and the first input terminal or the second input terminal is not connected to the second input / output terminal, and the first input / output terminal is not connected to the third input / output terminal. The high frequency module according to claim 4.

6. The switch is a state in which the first input terminal or the second input terminal is connected to the first input / output terminal, the first input terminal or the second input terminal is not connected to the second input / output terminal, and the third input / output terminal is not connected to the output terminal; a state in which the first input terminal or the second input terminal is connected to the second input / output terminal, the third input / output terminal is connected to the output terminal, and the first input terminal or the second input terminal is not connected to the first input / output terminal; The high frequency module according to claim 4.

7. A third inductor; a fourth inductor, the switch further includes a fourth input / output terminal, a fifth input / output terminal, and a sixth input / output terminal; the third inductor is connected between a path between the low-noise amplifier and the output terminal and the fourth input / output terminal; the fourth inductor is connected between the fifth input / output terminal and the sixth input / output terminal, The switch is a state in which the first input terminal or the second input terminal is connected to the fourth input / output terminal, and the first input terminal or the second input terminal is connected to the sixth input / output terminal, the fifth input / output terminal is connected to the ground terminal, and the first input terminal or the second input terminal is not connected to the first input / output terminal, and the first input terminal or the second input terminal is not connected to the third input / output terminal, and the second input terminal is not connected to the ground terminal; The high frequency module according to claim 4 .

8. a substrate having a first main surface and a second main surface opposed to each other; the first inductor and the second inductor are disposed adjacent to each other on the first main surface of the substrate, a direction of a winding axis of the first inductor and a direction of a winding axis of the second inductor are parallel to each other; The high frequency module according to claim 1 .

9. the transmission signal in the first communications band is a power class 2 transmission signal; The transmission signal of the second communication band is a transmission signal having a maximum output power lower than that of power class 2. The high frequency module according to claim 1 .

10. a transmission filter having a passband including a transmission band of the first communication band; the first filter and the transmission filter constitute a duplexer. The high frequency module according to claim 1 .

11. a transmission filter having a passband including a transmission band of the second communication band; the second filter and the transmission filter constitute a duplexer. The high frequency module according to claim 1 .

12. Further comprising a substrate having a first main surface and a second main surface opposed to each other, the first inductor and the second inductor are disposed on the first main surface of the substrate; When viewed from a thickness direction of the substrate, the first inductor is larger than the second inductor. The high frequency module according to claim 1 .

13. further comprising an IC chip including the second inductor and the switch. The high frequency module according to claim 1 .

14. a substrate having a first main surface and a second main surface opposed to each other; and an IC chip including the low noise amplifier, the first inductor is disposed on the first main surface of the substrate; the IC chip is disposed on the second main surface of the substrate; When viewed in a thickness direction of the substrate, the first inductor and the IC chip overlap each other. The high frequency module according to claim 1 .

15. The IC chip further includes the switch. the second inductor is disposed on the first main surface of the substrate; the IC chip is disposed on the second main surface of the substrate; When viewed in a thickness direction of the substrate, the second inductor and the IC chip overlap each other. The high frequency module according to claim 14.

16. a substrate having a first main surface and a second main surface opposed to each other; and an IC chip including the low noise amplifier and the switch, the second inductor is disposed on the first main surface of the substrate; the IC chip is disposed on the second main surface of the substrate; When viewed in a thickness direction of the substrate, the second inductor and the IC chip overlap each other. The high frequency module according to claim 1 .

17. A high-frequency module according to claim 1 or 4, a signal processing circuit connected to the high frequency module; Equipped with Communications equipment.

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