Manufacturing method of electronic component

Abstract

To provide a manufacturing method of an electronic component which improves the plating property of a conductor layer.SOLUTION: A manufacturing method of an electronic component includes the steps of preparing an element body, preparing a paste containing a resin, a plurality of glass particles, and a plurality of metal particles, forming a paste layer on a surface of the element body using the paste, selectively exposing a plurality of metal particles from among the resin, the plurality of glass particles, and the plurality of metal particles on a surface of the paste layer, forming a conductor layer on the element body by heat treating the paste layer after selectively exposing the plurality of metal particles on the surface, and forming a plating layer on the conductor layer. The step of selectively exposing the plurality of metal particles on the surface of the paste layer includes a step of irradiating the paste layer with a laser. This manufacturing method for an electronic component forms an external electrode including a conductor layer and a plating layer on the element body.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to a method for manufacturing an electronic component. [Background technology]

[0002] A known electronic component includes an element body and external electrodes formed on the surface of the element body (see, for example, Patent Document 1). The external electrodes include a conductor layer and a plating layer formed on the conductor layer. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 4-171912 Summary of the Invention [Problem to be solved by the invention]

[0004] The external electrodes are formed, for example, by the following method: First, a paste layer containing a resin, a plurality of metal particles, and a plurality of glass particles is formed on the surface of the element body, Next, a conductor layer is formed on the element body by heat treating the paste layer, Next, a plating layer is formed on the conductive layer.

[0005] The surface of the conductor layer formed by the above-mentioned method may contain a glass component formed by melting a plurality of glass particles by heat treatment of the paste layer. When the surface of the conductor layer contains the glass component, it is difficult to form a plating layer on the conductor layer. In other words, when the surface of the conductor layer contains the glass component, the plating property of the conductor layer is reduced.

[0006] An object of one aspect of the present invention is to provide a method for manufacturing an electronic component that improves the plating properties of a conductor layer. [Means for solving the problem]

[0007] A method for manufacturing an electronic component according to one embodiment includes preparing an element body, preparing a paste containing a resin, a plurality of glass particles, and a plurality of metal particles, forming a paste layer on a surface of the element body using the paste, selectively exposing a plurality of metal particles from among the resin, the plurality of glass particles, and the plurality of metal particles on a surface of the paste layer, forming a conductor layer on the element body by heat treating the paste layer after selectively exposing the plurality of metal particles on the surface, and forming a plating layer on the conductor layer. Selectively exposing the plurality of metal particles on the surface of the paste layer includes irradiating the paste layer with a laser. In the above one embodiment, an external electrode including a conductor layer and a plating layer is formed on the element body.

[0008] In the above-mentioned one aspect, the resin, the glass particles, and the metal particles are selectively exposed on the surface of the paste layer by the laser irradiation. The resin, the glass particles, and the metal particles are selectively exposed on the surface of the paste layer by the metal particles being exposed on the surface of the paste layer, so that the proportion of the glass particles on the surface is reduced compared to that before the laser irradiation. Therefore, in the conductor layer formed by heat-treating the paste layer after the laser irradiation, the proportion of the glass component on the surface is smaller than the proportion of the glass component on the surface of the conductor layer formed without the laser irradiation. In other words, selectively exposing the metal particles on the surface of the paste layer reduces the proportion of the glass component on the surface of the conductor layer. From the above, the above-mentioned one aspect improves the plating property of the conductor layer. Effect of the Invention

[0009] One aspect of the present invention provides a method for producing an electronic component that improves the plating properties of a conductor layer. [Brief description of the drawings]

[0010] [Figure 1] FIG. 1 is a perspective view showing an electronic component according to one embodiment. [Diagram 2] FIG. 2 is a perspective view showing a cross-sectional configuration of the electronic component according to this embodiment. [Diagram 3] FIG. 3 is a flowchart showing a method for manufacturing an electronic component according to this embodiment. [Figure 4] FIG. 4 is a perspective view showing a manufacturing process of the electronic component according to this embodiment. [Diagram 5] FIG. 5 is a schematic diagram showing a paste layer. [Figure 6] FIG. 6 is a perspective view showing a manufacturing process of the electronic component according to this embodiment. [Figure 7] FIG. 7 is a schematic diagram showing a paste layer. [Figure 8] FIG. 8 is a schematic diagram showing the first electrode layer. [Figure 9] FIG. 9 is a schematic diagram showing the first electrode layer and the second electrode layer. [Figure 10] FIG. 10 is a plan view showing the conductor layer. [Figure 11] FIG. 11 is a plan view showing the conductor layer. [Figure 12] FIG. 12 is a plan view showing the conductor layer. [Figure 13] FIG. 13 is a plan view showing the conductor layer. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the description, the same elements or elements having the same functions will be denoted by the same reference numerals, and duplicated description will be omitted.

[0012] First, the configuration of electronic component 1 will be described with reference to Figs. 1 and 2. Fig. 1 is a perspective view showing an electronic component according to the present embodiment. Fig. 2 is a diagram showing a cross-sectional configuration of the electronic component according to the present embodiment. As shown in Figs. 1 and 2, electronic component 1 includes an element body 3, a pair of external electrodes 5, a plurality of internal electrodes 7, and a plurality of internal electrodes 9. Electronic component 1 includes, for example, a multilayer ceramic capacitor. Electronic component 1 is obtained, for example, by a manufacturing process described below.

[0013] The element body 3 has a rectangular parallelepiped shape. The rectangular parallelepiped shape includes, for example, a rectangular parallelepiped shape with chamfered corners and ridges, and a rectangular parallelepiped shape with rounded corners and ridges. The element body 3 has a pair of end faces 3a, a pair of side faces 3c, and a pair of side faces 3e. The surface of the element body 3 includes the pair of end faces 3a, the pair of side faces 3c, and the pair of side faces 3e. In this embodiment, the pair of end faces 3a face each other in the first direction D1, the pair of side faces 3c face each other in the second direction D2, and the pair of side faces 3e face each other in the third direction D3. The pair of side faces 3c and the pair of side faces 3e are adjacent to the pair of end faces 3a, respectively, and extend in the first direction D1 so as to connect the pair of end faces 3a.

[0014] The first direction D1 is the length direction of the element body 3. The second direction D2 is the width direction of the element body 3. The third direction D3 is the height direction of the element body 3. The length of the element body 3 is, for example, not less than 0.4 mm and not more than 7.5 mm. The width of the element body 3 is, for example, not less than 0.2 mm and not more than 6.3 mm. The height of the element body 3 is, for example, not less than 0.2 mm and not more than 2.8 mm. In this embodiment, the length of the element body 3 is 3.2 mm, the width of the element body 3 is 1.6 mm, and the height of the element body 3 is 1.6 mm.

[0015] The element body 3 is configured by stacking a plurality of dielectric layers. In this embodiment, the dielectric layers are stacked in the third direction D3. The element body 3 includes a plurality of stacked dielectric layers. Each dielectric layer is, for example, configured from a sintered body of a ceramic green sheet. The ceramic green sheet includes, for example, a dielectric material. The dielectric material includes, for example, BaTiO3-based, Ba(Ti,Zr)O3-based, (Ba,Ca)TiO3-based, CaZrO3-based, or (Ca,Sr)ZrO3-based dielectric ceramic. The dielectric layers are integrated to such an extent that the boundaries between the dielectric layers are not visible.

[0016] As shown in FIG. 1, a pair of external electrodes 5 are arranged on the element body 3. The pair of external electrodes 5 face each other in the first direction D1. The pair of external electrodes 5 are spaced apart from each other in the first direction D1. The external electrodes 5 are arranged at the end of the element body 3 on the end face 3a side. The external electrodes 5 are arranged on the end face 3a. The external electrodes 5 are also arranged on a pair of side faces 3c and a portion of the pair of side faces 3e. The portion of the side face 3c on which the external electrodes 5 are arranged is located closer to the end face 3a. The portion of the side face 3e on which the external electrodes 5 are arranged is located closer to the end face 3a.

[0017] 2, the external electrode 5 includes a first electrode layer E1 and a second electrode layer E2. The first electrode layer E1 is formed on the element body 3. The second electrode layer E2 is formed on the first electrode layer E1. In this embodiment, each of the portions of the external electrode 5 that are disposed on one end face 3a, a pair of side faces 3c, and a pair of side faces 3e includes the first electrode layer E1 and the second electrode layer E2. The second electrode layer E2 constitutes the outermost layer of the external electrode 5.

[0018] The first electrode layer E1 is formed by heat-treating a paste layer formed by drying a paste applied to the surface of the element body 3. The first electrode layer E1 is a conductive layer formed on the element body 3. The paste includes a resin, a plurality of glass particles, a plurality of metal particles, and an organic solvent. The resin includes, for example, an acrylic resin or ethyl cellulose. The plurality of metal particles include, for example, Cu particles or Ni particles.

[0019] The second electrode layer E2 is a plating layer formed on the first electrode layer E1. The second electrode layer E2 is formed on the first electrode layer E1, for example, by a plating method. The second electrode layer E2 is formed on the first electrode layer E1. In this embodiment, the second electrode layer E2 is formed so as to cover the entire first electrode layer E1. The second electrode layer E2 may be a Ni plating layer formed on the first electrode layer E1 by Ni plating. The second electrode layer E2 may include, for example, a Ni plating layer formed on the first electrode layer E1 and a Sn plating layer formed on the Ni plating layer.

[0020] As shown in Fig. 2, the internal electrodes 7 and the internal electrodes 9 are arranged at different positions in the third direction D3. The internal electrodes 7 and the internal electrodes 9 are arranged alternately in the element body 3 so as to face each other at an interval in the third direction D3. The multiple internal electrodes 7, 9 face each other in the third direction D3. The multiple internal electrodes 7, 9 extend in the first direction D1 in the element body 3. The internal electrodes 7 and the internal electrodes 9 have mutually opposite polarities.

[0021] One end of the internal electrode 7 is exposed at the corresponding end face 3a. The internal electrode 7 has one end exposed at the corresponding end face 3a. The internal electrode 7 is connected to the corresponding external electrode 5 at the one end exposed at the end face 3a. The internal electrode 7 is electrically connected to the corresponding external electrode 5. One end of the internal electrode 7 is physically and electrically connected to a first electrode layer E1 included in the corresponding external electrode 5.

[0022] One end of the internal electrode 9 is exposed at the corresponding end face 3a. The internal electrode 9 has one end exposed at the corresponding end face 3a. The internal electrode 9 is connected to the corresponding external electrode 5 at the one end exposed at the end face 3a. The internal electrode 9 is electrically connected to the corresponding external electrode 5. One end of the internal electrode 9 is physically and electrically connected to a first electrode layer E1 included in the corresponding external electrode 5. The internal electrodes 7, 9 include a conductive material. The conductive material includes, for example, Cu or Ni. The internal electrodes 7, 9 may include the same conductive material as the conductive material included in the external electrode 5. The internal electrodes 7, 9 may include a conductive material different from the conductive material included in the external electrode 5. The internal electrodes 7, 9 are configured as a sintered body of a conductive paste including the conductive material.

[0023] Next, a method for manufacturing an electronic component according to the present embodiment will be described with reference to Figs. 3 to 9. Fig. 3 is a flowchart showing the method for manufacturing an electronic component according to the present embodiment. Figs. 4 and 6 are perspective views showing the manufacturing process of an electronic component according to the present embodiment. Figs. 5 and 7 are schematic diagrams showing a paste layer. Fig. 8 is a schematic diagram showing a first electrode layer. Fig. 9 is a schematic diagram showing a first electrode layer and a second electrode layer.

[0024] First, an element body 3 is prepared (step S1). In step S1, an element body 3 having a plurality of internal electrodes 7, 9 arranged therein is prepared. The element body 3 may be newly produced in step S1, or an element body 3 that has already been produced may be prepared in step S1.

[0025] Next, a paste is prepared (step S2). In step S2, a paste containing a resin R, a plurality of glass particles G1, a plurality of metal particles M, and an organic solvent is prepared. The average particle diameter of the plurality of metal particles M is, for example, 0.1 μm or more and 40 μm or less. In this manufacturing method, the average particle diameter of the plurality of metal particles M is 8 μm. The average particle diameter of the plurality of metal particles M is, for example, a particle diameter (d50) at an integrated value of 50% in a particle diameter distribution obtained by a laser diffraction / scattering method.

[0026] In this manufacturing method, the metal particles M include a plurality of metal particles M1 and a plurality of metal particles M2. The metal particles M1 are metal particles having a particle diameter of 1 μm or less in the above particle diameter distribution of the metal particles M among the plurality of metal particles M. The metal particles M2 are metal particles having a particle diameter of more than 1 μm in the above particle diameter distribution of the metal particles M among the plurality of metal particles M. That is, in this manufacturing method, the particle diameter of the metal particles M2 is larger than the particle diameter of the metal particles M1. The particle diameter of the metal particles M1 is, for example, 0.1 μm or more and 1 μm or less. The particle diameter of the metal particles M2 is, for example, 1 μm or more and 40 μm or less. For example, when the metal particles M1 are the first metal particles, the metal particles M2 are the second metal particles. For example, when the metal particles M1 have a particle diameter of the first particle diameter, the metal particles M2 have a particle diameter of the second particle diameter.

[0027] The resin R includes, for example, an acrylic resin or ethyl cellulose. The metal particles M include, for example, Cu particles or Ni particles. In this manufacturing method, the metal particles M are Cu particles. The particle shapes of the glass particles G1 and the metal particles M are not limited. The particle shapes of the glass particles G1 and the metal particles M include, for example, substantially spherical, substantially needle-like, or flake-like.

[0028] Next, a paste layer P is formed (step S3). In step S3, the paste containing the resin R, the glass particles G1, the metal particles M, and the organic solvent is used to form the paste layer P on the surface of the element body 3. In this manufacturing method, the paste is first applied to the entire surface of the end face 3a and the ends of the pair of side faces 3c and the pair of side faces 3e close to the end face 3a. The paste is applied by, for example, a dipping method, a printing method, or a transfer method. Next, the applied paste is dried to remove the organic solvent contained in the paste, and the paste layer P is formed. As shown in FIG. 4, in this manufacturing method, the paste layer P is formed on the entire surface of the end face 3a and the ends of the pair of side faces 3c and the pair of side faces 3e close to the end face 3a to which the paste is applied.

[0029] The surface of the paste layer P formed in step S3 includes, for example, a resin R, a plurality of glass particles G1, and a plurality of metal particles M. As shown in FIG. 5, in this manufacturing method, the surface of the paste layer P includes a plurality of metal particles M1 among the plurality of metal particles M. That is, for example, the resin R, the plurality of glass particles G1, and the plurality of metal particles M1 are exposed on the surface of the paste layer P formed in step S3. In this manufacturing method, the surface of the paste layer P formed in step S3 does not include a plurality of metal particles M2. As shown in FIG. 5, the plurality of metal particles M2 are located inside the paste layer P. That is, the plurality of metal particles M2 are not exposed on the surface of the paste layer P formed in step S3. In this manufacturing method, in addition to the plurality of metal particles M2, the glass particles G1 and the metal particles M1 are also located inside the paste layer P. The surface of the paste layer P formed in step S3 may include only the resin R and the plurality of glass particles G1, may include only the resin R and the plurality of metal particles M1, or may include only the resin R. Alternatively, the surface of the paste layer P formed in step S3 may include a plurality of metal particles M2 in addition to the resin R, the plurality of glass particles G1, and the plurality of metal particles M1.

[0030] The proportion of glass particles G1 on the surface of paste layer P at the end of step S3 is, for example, 10% or more and 40% or less. In this manufacturing method, the proportion of glass particles G1 on the surface of paste layer P at the end of step S3 is 26%. The proportion of metal particles M on the surface of paste layer P at the end of step S3 is, for example, 60% or more and 90% or less. In this manufacturing method, the proportion of metal particles M on the surface of paste layer P at the end of step S3 is 74%. In this manufacturing method, as described above, the plurality of metal particles M2 are not exposed on the surface of the paste layer P formed in step S3. Therefore, in this manufacturing method, the abundance ratio of the metal particles M on the surface of the paste layer P at the end of step S3 indicates the abundance ratio of the metal particles M1 on the surface of the paste layer P at the end of step S3.

[0031] The respective abundance ratios of the glass particles G1 and the metal particles M on the surface of the paste layer P at the end of step S3 can be obtained, for example, as follows. First, a photograph is taken of the surface of the paste layer P formed on the end face 3a from the first direction D1. Next, the photograph is image-processed by software. Next, the boundaries of each glass particle G1 and each metal particle M are identified by the image processing, and the total area of ​​the glass particles G1 and the total area of ​​the metal particles M are obtained. Next, the total area of ​​the glass particles G1 and the total area of ​​the metal particles M are divided by the sum of the total area of ​​the glass particles G1 and the total area of ​​the metal particles M, and a quotient is calculated. Each calculated quotient indicates the presence ratio of the glass particles G1 and the metal particles M on the surface of the paste layer P at the end of step S3.

[0032] Next, the plurality of metal particles M are selectively exposed on the surface of the paste layer P (step S4). In step S4, the paste layer P is irradiated with a laser, thereby selectively exposing the plurality of metal particles M on the surface of the paste layer P. In this manufacturing method, the paste layer P is irradiated with a laser, thereby selectively exposing the plurality of metal particles M2 on the surface of the paste layer P among the resin R, the plurality of glass particles G1, the plurality of metal particles M1, and the plurality of metal particles M2.

[0033] The laser irradiation is performed by a laser irradiation device 100. In this manufacturing method, the laser irradiation device 100 scans the surface of the paste layer P in a third direction D3, thereby selectively exposing a plurality of metal particles M2 on the surface of the paste layer P. At this time, the number of scans of the laser irradiation device 100 on the surface of the paste layer P is, for example, 1 time or more and 15 times or less. In this manufacturing method, the number of scans of the laser irradiation device 100 on the surface of the paste layer P is 1 time. The direction in which the laser irradiation device 100 scans may be the second direction D2. The laser irradiation device 100 has a laser light source (not shown) and irradiates laser light L from the laser light source forward.

[0034] In this manufacturing method, the surface of the paste layer P is irradiated with a laser to remove the resin R, glass particles G1, and metal particles M1 contained in the surface of the paste layer P. At this time, all of the resin R, glass particles G1, and metal particles M1 contained in the surface of the paste layer P may be removed, or only a portion of the resin R, glass particles G1, and metal particles M1 contained in the surface of the paste layer P may be removed.

[0035] In this manufacturing method, the resin R, glass particles G1, and metal particles M1 contained in the surface of the paste layer P are removed, thereby exposing a plurality of metal particles M2 on the surface of the paste layer P. In this manufacturing method, as shown in Fig. 7, in addition to the plurality of metal particles M2, the glass particles G1 and metal particles M1 located inside the paste layer P are also exposed on the surface of the paste layer P. Therefore, at the end of step S4, the resin R, the plurality of glass particles G1, the plurality of metal particles M1, and the plurality of metal particles M2 are exposed in the paste layer P.

[0036] Here, the metal particles M2 exposed on the surface of the paste layer P are not limited to the metal particles M2 located inside the paste layer P before the laser irradiation. In other words, selectively exposing the plurality of metal particles M2 on the surface of the paste layer P is not limited to exposing the metal particles M2 located inside the paste layer P before the laser irradiation. For example, when the metal particles M2 are exposed on the surface of the paste layer P before the laser irradiation, selectively exposing the plurality of metal particles M2 on the surface of the paste layer P also includes increasing the amount of the metal particles M2 exposed on the surface of the paste layer P by irradiating the paste layer P with a laser.

[0037] The laser irradiation device 100 that irradiates the paste layer P with the laser light L is, for example, a rare earth fiber laser. For example, the laser is a mode-locked pulsed laser, and the laser light L is a pulsed laser light. When the laser light L is a pulsed laser light, the laser light L is, for example, a pulsed laser light having a wavelength of 250 nm or more and 1600 nm or less. When the laser light L is a pulsed laser light, the laser light L is, for example, a pulsed laser light having a pulse width of 10 ps or less. When the laser light L is a pulsed laser light, the laser light L is, for example, a pulsed laser light having a pulse energy of 0.1 μJ or more and 10 μJ or less.

[0038] In this manufacturing method, the conditions of the laser irradiation are adjusted so that the plurality of metal particles M is not removed by the laser irradiation. As a result, the plurality of metal particles M are selectively exposed on the surface of the paste layer P. For example, the plurality of metal particles M may be selectively exposed on the surface of the paste layer P by adjusting the pulse energy of the laser light L. In this case, the plurality of metal particles M are more selectively exposed on the surface of the paste layer P by lowering the pulse energy of the laser light L.

[0039] Alternatively, the number of scans of the laser irradiation device 100 on the surface of the paste layer P may be adjusted in addition to the pulse energy of the laser light L to selectively expose the multiple metal particles M on the surface of the paste layer P. In this case, by increasing the number of scans of the laser irradiation device 100 on the surface of the paste layer P and decreasing the pulse energy of the laser light L, the multiple metal particles M are selectively exposed on the surface of the paste layer P more reliably.

[0040] The proportion of glass particles G1 on the surface of the paste layer P at the end of step S4 is, for example, 0% or more and 30% or less. In this embodiment, the proportion of glass particles G1 on the surface of the paste layer P at the end of step S4 is 13%. The proportion of metal particles M on the surface of the paste layer P at the end of step S4 is, for example, 70% or more and 100% or less. In this embodiment, the proportion of metal particles M on the surface of the paste layer P at the end of step S4 is 87%. As described above, in this manufacturing method, at the end of step S4, a plurality of metal particles M1 and a plurality of metal particles M2 are exposed on the surface of the paste layer P. Therefore, in this manufacturing method, the abundance ratio of the metal particles M on the surface of the paste layer P at the end of step S4 indicates the abundance ratio of the metal particles M1 and the metal particles M2 on the surface of the paste layer P at the end of step S4.

[0041] The abundance ratios of the glass particles G1 and the metal particles M on the surface of the paste layer P at the end of step S4 can be obtained, for example, in the same manner as the method for obtaining the abundance ratios of the glass particles G1 and the metal particles M on the surface of the paste layer P at the end of step S3. That is, each quotient obtained by dividing the total area of ​​the glass particles G1 and the total area of ​​the metal particles M by the sum of the total area of ​​the glass particles G1 and the total area of ​​the metal particles M indicates the abundance ratios of the glass particles G1 and the metal particles M on the surface of the paste layer P at the end of step S4.

[0042] 5 and 7 show a schematic cross-sectional configuration of the paste layer P. Therefore, the shapes and arrangements of the glass particles G1 and the metal particles M1, M2 shown in Fig. 5 and 7 are different from the actual shapes and arrangements of the glass particles G1 and the metal particles M1, M2. In reality, the shapes of the glass particles G1 and the metal particles M1, M2 are not uniform, and they are irregularly arranged in the paste layer P.

[0043] Next, the first electrode layer E1 is formed (step S5). In step S5, the first electrode layer E1 is formed by heat-treating the paste layer P after selectively exposing the plurality of metal particles M on the surface of the paste layer P. In this manufacturing method, the first electrode layer E1 is formed by heat-treating the paste layer P after selectively exposing the plurality of metal particles M2 on the surface of the paste layer P. In this manufacturing method, the first electrode layer E1 is formed by heat-treating the paste layer P at a temperature of 700°C or higher and 850°C or lower. The resin R is removed by the heat treatment of the paste layer P, and the plurality of metal particles M are sintered to form the first electrode layer E1. The plurality of glass particles G1 contained in the paste layer P are melted by the heat treatment of the paste layer P. Therefore, the first electrode layer E1 contains the glass component G2 generated by melting the plurality of glass particles G1. As shown in FIG. 8, in this manufacturing method, the sintered metal particles M and the glass component G2 are exposed on the surface of the first electrode layer E1.

[0044] The proportion of glass component G2 on the surface of first electrode layer E1 at the end of step S5 is, for example, 0% or more and 30% or less. In this embodiment, the proportion of glass component G2 on the surface of first electrode layer E1 at the end of step S5 is 13%. The proportion of metal particles M on the surface of first electrode layer E1 at the end of step S5 is, for example, 70% or more and 100% or less. In this embodiment, the proportion of metal particles M on the surface of first electrode layer E1 at the end of step S5 is 87%.

[0045] The respective abundance ratios of the glass component G2 and the metal particles M on the surface of the first electrode layer E1 at the end of step S5 can be obtained, for example, as follows. First, a photograph is taken of the surface of the first electrode layer E1 formed on the end face 3a from the first direction D1. Next, the photograph is image-processed by software. Next, the boundaries between the glass component G2 and the metal particles M are determined by image processing, and the total area of ​​the glass component G2 and the metal particles M and the surface area of ​​the first electrode layer E1 in the image are obtained. Next, the total area of ​​the glass component G2 and the metal particles M is divided by the surface area of ​​the first electrode layer E1, and a quotient is calculated. Each calculated quotient indicates the presence ratio of the glass component G2 and the metal particles M on the surface of the first electrode layer E1 at the end of step S5.

[0046] Next, the second electrode layer E2 is formed (step S6). In step S6, the second electrode layer E2 is formed on the first electrode layer E1. The second electrode layer E2 is formed on the first electrode layer E1. As shown in FIG. 9, in this manufacturing method, the second electrode layer E2 is formed on the first electrode layer E1 so as to follow the surface of the first electrode layer E1. The second electrode layer E2 is formed so as to cover the entire first electrode layer E1. In this manufacturing method, as described above, the second electrode layer E2 is formed by a plating method. The plating method for forming the second electrode layer E2 includes, for example, an electroplating method. In this way, an external electrode 5 including the first electrode layer E1 and the second electrode layer E2 is formed. Through the above-described manufacturing process, the electronic component 1 shown in FIGS. 1 and 2 is obtained.

[0047] Fig. 8 shows a schematic cross-sectional configuration of the first electrode layer E1, and Fig. 9 shows a schematic cross-sectional configuration of the first electrode layer E1 and the second electrode layer E2. Therefore, in Fig. 8 and Fig. 9, the boundaries of the sintered metal particles M are omitted. Furthermore, the shapes and arrangement of the glass components G2 shown in Fig. 8 and Fig. 9 are different from the shapes and arrangement of the actual glass components G2. In reality, the shapes of the glass components G2 are not uniform, and they are irregularly arranged in the first electrode layer E1.

[0048] As described above, in the manufacturing method of the electronic component 1 according to the present embodiment, the resin R, the glass particles G1, and the metal particles M, among the resin R, the glass particles G1, and the metal particles M, are selectively exposed on the surface of the paste layer P by the laser irradiation. By exposing the metal particles M on the surface of the paste layer P, among the resin R, the glass particles G1, and the metal particles M, the presence ratio of the glass particles G1 on the surface of the paste layer P is reduced compared to before the laser irradiation. Therefore, in the first electrode layer E1 formed by heat-treating the paste layer P after the laser irradiation, the presence ratio of the glass component G2 on the surface is lower than the presence ratio of the glass component on the surface of the electrode layer formed without the laser irradiation. In other words, selectively exposing the metal particles M on the surface of the paste layer P reduces the amount of the glass component G2 contained in the surface of the first electrode layer E1. From the above, the manufacturing method of the electronic component 1 improves the plating property of the first electrode layer E1.

[0049] Although the embodiment of the present invention has been described above, the present invention is not necessarily limited to the above-described embodiment, and various modifications are possible without departing from the gist of the present invention.

[0050] In the method for manufacturing the electronic component 1, among the resin R, the plurality of glass particles G1, the plurality of metal particles M1, and the plurality of metal particles M2, the plurality of metal particles M2 may not be selectively exposed on the surface of the paste layer P. In this case, among the resin R, the plurality of glass particles G1, the plurality of metal particles M1, and the plurality of metal particles M2, only the plurality of metal particles M1 may be selectively exposed on the surface of the paste layer P. Alternatively, among the resin R, the plurality of glass particles G1, the plurality of metal particles M1, and the plurality of metal particles M2, both the plurality of metal particles M1 and the plurality of metal particles M2 may be selectively exposed on the surface of the paste layer P. In the method for producing the electronic component 1, the resin R does not need to contain an acrylic resin or ethyl cellulose.

[0051] In the method for manufacturing the electronic component 1, the irradiated laser light L does not have to be a pulsed laser light. In the method for manufacturing the electronic component 1, when the irradiated laser light L is a pulsed laser light, the laser light L does not have to have a wavelength of 250 nm or more and 1600 nm or less. That is, in the method for manufacturing the electronic component 1, when the irradiated laser light L is a pulsed laser light, the laser light L may have a wavelength shorter than 250 nm or longer than 1600 nm. In the method for manufacturing the electronic component 1, when the irradiated laser light L is a pulsed laser light, the laser light L does not have to have a pulse width of 10 ps or less. That is, in the method for manufacturing the electronic component 1, when the irradiated laser light L is a pulsed laser light, the laser light L may have a pulse width greater than 10 ps. In the method for manufacturing the electronic component 1, when the irradiated laser light L is a pulsed laser light, the laser light L does not need to have pulse energy of 0.1 μJ or more and 10 μJ or less. That is, in the method for manufacturing the electronic component 1, when the irradiated laser light L is a pulsed laser light, the laser light L may have pulse energy less than 0.1 μJ or more than 10 μJ.

[0052] Next, with reference to Fig. 10 to Fig. 13, it will be specifically shown by examples and comparative examples that selectively exposing a plurality of metal particles M on the surface of the paste layer P reduces the proportion of the glass component G2 on the surface of the first electrode layer E1. Fig. 10 to Fig. 13 are plan views showing a conductor layer. The present invention is not limited to the following examples.

[0053] Example 1 In Example 1, first, an element having a pair of end faces facing each other in a first direction, a pair of side faces facing each other in a second direction D2, and a pair of side faces facing each other in a third direction D3 was prepared as an element corresponding to the element 3 prepared in step S1. Next, a paste containing a resin, a plurality of glass particles, a plurality of Cu particles C, and an organic solvent was prepared as a paste corresponding to the paste prepared in step S2. The average particle diameter of the plurality of Cu particles C was 8 μm. The average particle diameter of the plurality of Cu particles C is, for example, a particle diameter (d50) at an integrated value of 50% in a particle diameter distribution obtained by a laser diffraction / scattering method. In Example 1, the plurality of Cu particles C include a plurality of Cu particles having a particle diameter of 1 μm or less and a plurality of Cu particles having a particle diameter of more than 1 μm in the particle diameter distribution. Next, a paste layer was formed on the surface of the prepared element using the prepared paste. Here, a paste layer was formed on the entire surface of the end face of the element body and on the ends of the four side faces close to the end faces.

[0054] Next, the formed paste layer was irradiated with a laser, and a plurality of Cu particles C were selectively exposed on the surface of the paste layer. In Example 1, a rare earth fiber laser was used as a laser irradiation device for irradiating the paste layer with laser light, and the laser light was a pulsed laser light. The surface of the paste layer was scanned with the laser irradiation device in the third direction D3, and a plurality of Cu particles C were selectively exposed on the surface of the paste layer P. In Example 1, the number of scans of the laser irradiation device 100 on the surface of the paste layer P was one. In Example 1, the wavelength of the laser light was 1030 nm, the pulse width of the laser light was 1.5 ps, and the pulse energy of the laser light was 0.5 μJ.

[0055] After selectively exposing the Cu particles C on the surface of the paste layer, the paste layer is heat-treated to form a conductor layer on the element. Here, the paste layer is heat-treated to remove the resin and sinter the Cu particles C to form the conductor layer. The formed conductor layer contains a glass component G3 produced by melting the glass particles.

[0056] Next, the abundance ratio of the glass component G3 and the Cu particles C on the surface of the formed conductor layer was determined. In Example 1, the abundance ratios were determined as follows. First, a photograph was taken of the surface of the conductor layer formed on the end face of the element body from the first direction D1. FIG. 10 is a plan view showing the surface of the conductor layer obtained in Example 1. Next, the obtained photograph was image-processed by software. Next, the boundaries of the glass component G3 and the Cu particles C were discriminated by the image processing, and the total areas of the glass component G3 and the Cu particles C and the surface area of ​​the conductor layer in the obtained photograph were obtained. Next, the total areas of the glass component G3 and the Cu particles C were divided by the above-mentioned surface area of ​​the conductor layer, and quotients were calculated. Each calculated quotient was taken as the abundance ratio of the glass component G3 and the Cu particles C on the surface of the conductor layer. As a result, in Example 1, the abundance ratio of the glass component G3 on the surface of the conductor layer was 22.45%, and the abundance ratio of the Cu particles C was 77.39%.

[0057] Example 2 In Example 2, a paste layer and a conductor layer were formed in the same manner as in Example 1, except that the pulse energy of the laser light was set to 0.1 μJ, and the abundance ratios of the glass component G3 and the Cu particles C on the surface of the conductor layer formed were obtained. Fig. 11 is a plan view showing the surface of the conductor layer obtained in Example 2. As a result, in Example 2, the abundance ratio of the glass component G3 on the surface of the conductor layer was 17.56%, and the abundance ratio of the Cu particles C was 82.30%.

[0058] Example 3 In Example 3, the number of scans of the laser irradiation device on the surface of the paste layer was 10, and the pulse energy of the laser light was 0.01 μJ. Except for this, the paste layer and the conductor layer were formed in the same manner as in Example 1, and the abundance ratios of the glass component G3 and the Cu particles C on the surface of the conductor layer formed were obtained. Fig. 12 is a plan view showing the surface of the conductor layer obtained in Example 3. As a result, in Example 3, the abundance ratio of the glass component G3 on the surface of the conductor layer was 12.52%, and the abundance ratio of the Cu particles C was 87.32%.

[0059] (Comparative Example) In the comparative example, a paste layer and a conductor layer were formed in the same manner as in Example 1, except that the selective exposure of a plurality of Cu particles C to the surface of the paste layer was not performed, and the abundance ratios of the glass component G3 and the Cu particles C on the surface of the formed conductor layer were obtained. That is, in the comparative example, the paste layer was not irradiated with a laser. FIG. 13 is a plan view showing the surface of the conductor layer obtained in the comparative example. As a result, in the comparative example, the abundance ratio of the glass component G3 on the surface of the conductor layer was 26.45%, and the abundance ratio of the Cu particles C was 73.48%.

[0060] From the results of Examples 1 to 3 and Comparative Example, it is found that the abundance ratio of the glass component G3 in Examples 1 to 3 in which the multiple Cu particles C are selectively exposed on the surface of the paste layer is smaller than the abundance ratio of the glass component G3 in Comparative Example in which the multiple Cu particles C are not selectively exposed on the surface of the paste layer. From this, it is understood that selectively exposing the multiple metal particles M on the surface of the paste layer P reduces the abundance ratio of the glass component on the surface of the first electrode layer E1.

[0061] From the results of Example 1 and Example 2, it is found that as the pulse energy of the laser light decreases, the abundance ratio of the glass component G3 on the surface of the conductor layer decreases and the abundance ratio of the Cu particles C increases. From this, it is understood that by lowering the pulse energy of the laser light L during laser irradiation, the plurality of metal particles M are more selectively exposed on the surface of the paste layer P, and the abundance ratio of the glass component G2 on the surface of the conductor layer decreases further.

[0062] Furthermore, from the results of Example 2 and Example 3, it can be seen that by increasing the number of scans of the laser irradiation device on the surface of the paste layer and decreasing the pulse energy of the laser light, the abundance ratio of the glass component G3 on the surface of the conductor layer is more reliably decreased and the abundance ratio of the Cu particles C is more reliably increased. From this, it can be understood that by increasing the number of scans of the laser irradiation device 100 on the surface of the paste layer P and decreasing the pulse energy of the laser light L, the multiple metal particles M are more reliably selectively exposed on the surface of the paste layer P, and the abundance ratio of the glass component G2 on the surface of the conductor layer is more reliably decreased.

[0063] As will be understood from the description of the above embodiments, the present specification includes disclosure of the following aspects. (Appendix 1) Preparing the body, Providing a paste including a resin, a plurality of glass particles, and a plurality of metal particles; forming a paste layer on a surface of the element body using the paste; a step of irradiating the paste layer with a laser, the step of selectively exposing the metal particles from among the resin, the glass particles, and the metal particles on a surface of the paste layer; forming a conductor layer on the element body by heat treating the paste layer after selectively exposing the plurality of metal particles on the surface; forming a plating layer on the conductor layer; and forming an external electrode including the conductor layer and the plating layer on the base body. (Appendix 2) preparing the paste includes preparing the paste, the plurality of metal particles including a plurality of first metal particles having a first particle size and a plurality of second metal particles having a second particle size larger than the first particle size; The method for manufacturing an electronic component described in Appendix 1, wherein selectively exposing the plurality of metal particles on the surface includes selectively exposing the plurality of second metal particles on the surface among the resin, the plurality of glass particles, the plurality of first metal particles, and the plurality of second metal particles. (Appendix 3) 3. The method for producing an electronic component according to claim 1, wherein preparing the paste includes preparing the paste in which the resin contains an acrylic resin or ethyl cellulose. (Appendix 4) 4. The method for producing an electronic component according to any one of claims 1 to 3, wherein the laser irradiation includes irradiating a pulsed laser beam. (Appendix 5) 5. The method for manufacturing an electronic component according to claim 4, wherein the irradiating of the pulsed laser light includes irradiating a pulsed laser light having a wavelength of 250 nm or more and 1600 nm or less. (Appendix 6) 6. The method for producing an electronic component according to claim 4 or 5, wherein the irradiating of the pulsed laser light includes irradiating a pulsed laser light having a pulse width of 10 ps or less. (Appendix 7) 7. The method for producing an electronic component according to any one of claims 4 to 6, wherein the irradiating of the pulsed laser light includes irradiating a pulsed laser light having a pulse energy of 0.1 μJ or more and 10 μJ or less. [Explanation of symbols]

[0064] 1...electronic component, 3...element body, 5...external electrode, E1...first electrode layer, E2...second electrode layer, G1...glass particles, M, M1, M2...metal particles, P...paste layer, R...resin.

Claims

1. Preparing the body, Providing a paste including a resin, a plurality of glass particles, and a plurality of metal particles; forming a paste layer on a surface of the element body using the paste; a step of irradiating the paste layer with a laser, the step of selectively exposing the metal particles from among the resin, the glass particles, and the metal particles on a surface of the paste layer; forming a conductor layer on the element body by heat treating the paste layer after selectively exposing the plurality of metal particles on the surface; forming a plating layer on the conductor layer; and forming an external electrode including the conductor layer and the plating layer on the base body.

2. preparing the paste includes preparing the paste, the plurality of metal particles including a plurality of first metal particles having a first particle size and a plurality of second metal particles having a second particle size larger than the first particle size; 2. The method for manufacturing an electronic component according to claim 1, wherein selectively exposing the plurality of metal particles on the surface includes selectively exposing the plurality of second metal particles on the surface among the resin, the plurality of glass particles, the plurality of first metal particles, and the plurality of second metal particles.

3. The method for manufacturing an electronic component according to claim 1 or 2, wherein preparing the paste includes preparing the paste in which the resin contains an acrylic resin or ethyl cellulose.

4. The method for manufacturing an electronic component according to claim 1 , wherein the laser irradiation includes irradiating a pulsed laser beam.

5. The method for producing an electronic component according to claim 4 , wherein the irradiating with the pulsed laser light includes irradiating with a pulsed laser light having a wavelength of 250 nm or more and 1600 nm or less.

6. The method for manufacturing an electronic component according to claim 4 , wherein the irradiating with pulsed laser light includes irradiating with pulsed laser light having a pulse width of 10 ps or less.

7. The method for producing an electronic component according to claim 4 , wherein the irradiating with the pulsed laser light includes irradiating with a pulsed laser light having a pulse energy of 0.1 μJ or more and 10 μJ or less.

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