Semiconductor device

Abstract

To provide a semiconductor device capable of restraining deterioration of characteristics.SOLUTION: A semiconductor device 100 includes a substrate 10, a first source electrode 12c, a first drain electrode 16c, a first gate electrode 14c, a first transistor 35c, a second source electrode 12d provided in the first source electrode, a second drain electrode 16d, a second gate electrode 14d, a second transistor 35d, a first gate wire 24 that is provided on a main surface 50, sandwiches the second source electrode with the second gate electrode, provided in the first source electrode as viewed in a second direction Y, and electrically connected to the first gate electrode, and a back surface metal layer 28 that is provided on a back surface 52 and electrically connected to the first source electrode and the second source electrode via a first via hole and a second via hole 20c that overlap the first source electrode and the second source electrode respectively as viewed in a thickness direction Z of the substrate.SELECTED DRAWING: Figure 2

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