Semiconductor device

Abstract

To provide a semiconductor device capable of restraining deterioration of characteristics.SOLUTION: A semiconductor device 100 includes a substrate 10 having a main surface 50 and a back surface opposite to the main surface, a first transistor including a first source electrode 12a, a first drain electrode 16a, and a first gate electrode 14a, a second transistor 35c including a second source electrode 12c, a second drain electrode 16c, and a second gate electrode 14c, a third transistor including a third source electrode electrically connected to the first source electrode and the second source electrode, a third drain electrode electrically connected to the first drain electrode and the second drain electrode, and a third gate electrode, a first gate wire, and a back metal layer that is provided on the back surface and electrically connected to the first source electrode and the second source electrode through a first via hole 20a and a second via hole that overlap the first source electrode and the second source electrode respectively as viewed in a thickness direction of the substrate.SELECTED DRAWING: Figure 1

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