Power cycle test device

Abstract

To solve the problems that connection change of a wire made to correspond to test items requires a long time and a large test device is required for a work space for the connection change.SOLUTION: A conduction plate 204 and a switch circuit 124 are attached to a switch circuit board 201. The plurality of switch circuit boards 201 are disposed in parallel to each other, and the conduction plate 204 of each switch circuit board 201 has a portion protruding from the switch circuit board 201. A wire 211 is connected to an element terminal 226 of a transistor 117 to be tested and a portion of the conduction plate 204 protruding from the selected switch circuit board 201. When the switch circuit 124 of the selected switch circuit board 201 is turned on, test current of a power source device 132 is supplied to the transistor 117 to be tested and a power cycle test is conducted.SELECTED DRAWING: Figure 9

Description

[Technical field]

[0001] The present invention relates to an electric element testing apparatus and an electric element testing method for performing power cycle tests on semiconductor elements such as SiC, IGBT, MOS-FET, Gan-FET, and bipolar transistors.

[0002] Provided is a semiconductor element testing device and a semiconductor element testing method that can efficiently reproduce stress similar to a failure mode in the environment in which a semiconductor element is used and can evaluate power semiconductor elements and the like with high reliability. [Background technology]

[0003] The lifespan of a power semiconductor element includes a lifespan caused by thermal fatigue caused by heat generation in the power semiconductor element itself, a lifespan caused by thermal fatigue caused by temperature changes in the external environment of the power semiconductor element, and a lifespan caused by voltage fatigue caused by the voltage applied to the gate insulating film of the power semiconductor element.

[0004] Generally, life tests for power semiconductor elements are performed by repeatedly turning current on and off to the semiconductor element. For example, tests are performed by setting voltages and currents to the emitter terminal (source terminal) and collector terminal (drain terminal) of the transistor of the semiconductor element, and applying periodic on-off signals (operation / non-operation signals) to the gate terminal.

[0005] The current applied to the semiconductor element during testing is large, at several hundred amperes, and requires low-resistance wiring to avoid heat generation and voltage drop. Because the test current is large, the connection between the semiconductor element and the wiring must be made with low resistance. In addition, there are many types of tests, and the wiring connections must be changed according to the type of test. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Patent Publication No. 2014-138488 Summary of the Invention [Problem to be solved by the invention]

[0007] In a conventional semiconductor device test apparatus, a power semiconductor device (such as a transistor) is tested by turning on and off the transistor 117 and passing a constant current Id through the channel of the transistor.

[0008] There are a wide variety of test items that can be performed by a semiconductor device tester (power cycle tester), and it is necessary to change the connection to the transistor 117 in accordance with the test items.

[0009] The constant current Id is often several hundred amperes or more, and it is necessary to use thick wires for the connection wiring 211 and power supply wiring 212 that pass the current. In addition, a large current Id flows through the semiconductor element terminal. If there is contact resistance between the semiconductor element terminal and the connection wiring, the contact portion will generate heat, which may destroy the semiconductor element.

[0010] Changing the wiring connections of thick wires to accommodate test items takes a long time, and since it requires a working space for changing the wiring connections, there is a problem that the test equipment becomes large. [Means for solving the problem]

[0011] The semiconductor element testing apparatus of the present invention has a connection structure 218 that connects with element terminals 226 of a semiconductor element to be tested. One end of the connection structure 218 has a contact portion 220 that contacts element terminals 226, and a peat pipe 223 is attached to the surface of the connection structure 218. The connection structure 218 is electrically connected to element terminals 226 of the semiconductor element 117 to be tested by inserting it into an opening 216 formed in a partition wall 217 and / or by inserting the connection structure into a groove in a support stand 323.

[0012] The semiconductor device testing device of the present invention separates the location (space) in the semiconductor device testing device where the transistor 117 to be tested is arranged from the location of the circuit board that generates the test current for the transistor 117, generates the control signal, and acquires the test results. A partition wall is provided for the separation.

[0013] The connection between the transistor to be tested and the circuit board is made by inserting a fork plug 205 (connection plug 205) through an opening 216 provided in the partition wall 214 and bringing the connection plug 205 into contact with a conductive plate on the circuit board. Effect of the Invention

[0014] Since there is contact resistance at the connection between element terminal 226 of transistor 117 to be tested and connection structure 218, the contact will heat up when a large current flows. In the present invention, heat pipe 223 is disposed in connection structure 218, so that the generated heat can be efficiently conducted and released. Since element terminal 226 and connection structure 218 are structured to be inserted from opening 216 of partition wall 217, they can be easily attached to and detached from transistor 117 to be tested, and the connection with transistor 117 to be tested can be changed in a short time.

[0015] A partition wall 214 is provided to separate a location (space) in the semiconductor device testing equipment where the transistor 117 is arranged from a location on a circuit board where a test current for the transistor 117 is generated, a control signal is generated, and test results are acquired. A connection plug 205 is inserted through an opening 216 provided in the partition wall 214, and the connection plug 205 is connected to a conductor plate 204 on the circuit board. There is no need to connect the connection wiring 211 for each test item, and no work space is required for changing the wiring connection, allowing the semiconductor device testing equipment to be made smaller. [Brief description of the drawings]

[0016] [Figure 1] FIG. 2 is an explanatory diagram of an electrical element testing device according to the present invention. [Diagram 2]FIG. 2 is an explanatory diagram of a method for connecting an electric element test apparatus and an electric element according to the present invention. [Diagram 3] FIG. 2 is an explanatory diagram of a connection portion of the electrical element testing apparatus of the present invention. [Figure 4] FIG. 2 is an explanatory diagram of a connection portion of the electrical element testing apparatus of the present invention. [Diagram 5] FIG. 2 is an explanatory diagram of a connection portion of the electrical element testing apparatus of the present invention. [Figure 6] FIG. 2 is an explanatory diagram of a connection portion of the electrical element testing apparatus of the present invention. [Figure 7] FIG. 2 is an explanatory diagram of a method for connecting an electric element test apparatus and an electric element according to the present invention. [Figure 8] FIG. 1 is a configuration diagram of an electrical element testing device according to the present invention. [Figure 9] FIG. 2 is an explanatory diagram of an electrical element testing device according to the present invention. [Figure 10] FIG. 2 is an explanatory diagram of an electrical element testing device according to the present invention. [Figure 11] FIG. 2 is an explanatory diagram of an electrical element testing device according to the present invention. [Figure 12] 1 is a structural diagram and an equivalent circuit diagram of an electric element. [Figure 13] 1 is a structural diagram and an equivalent circuit diagram of an electric element. [Figure 14] FIG. 2 is an explanatory diagram of an electrical element testing device according to the present invention. [Figure 15] FIG. 2 is an explanatory diagram of a method for connecting an electric element test apparatus and an electric element according to the present invention. [Figure 16] 1A and 1B are configuration diagrams and explanatory diagrams of a connection structure of the present invention. [Figure 17] 1A and 1B are configuration diagrams and explanatory diagrams of a connection structure of the present invention. [Figure 18] 1A and 1B are configuration diagrams and explanatory diagrams of a connection structure of the present invention. [Figure 19] 1A and 1B are configuration diagrams and explanatory diagrams of a connection structure of the present invention. [Figure 20] 1A and 1B are configuration diagrams and explanatory diagrams of a connection structure of the present invention. [Figure 21] 1A and 1B are configuration diagrams and explanatory diagrams of a connection structure of the present invention. [Figure 22]1A and 1B are configuration diagrams and explanatory diagrams of a connection structure of the present invention. [Diagram 23] FIG. 2 is an explanatory diagram of a connection portion of the electrical element testing apparatus of the present invention. [Figure 24] FIG. 2 is an explanatory diagram of a connection portion of the electrical element testing apparatus of the present invention. [Diagram 25] FIG. 2 is an explanatory diagram of an electrical element testing device according to the present invention. [Figure 26] FIG. 1 is a configuration diagram of an electrical element testing device according to the present invention. [Figure 27] FIG. 2 is an explanatory diagram of an electrical element testing device according to the present invention. [Figure 28] FIG. 2 is an explanatory diagram of an electrical element testing device according to the present invention. [Figure 29] FIG. 2 is an explanatory diagram of the operation of the electric element testing apparatus in the first embodiment of the present invention. [Diagram 30] FIG. 2 is an explanatory diagram of the operation of the electric element testing apparatus in the first embodiment of the present invention. [Diagram 31] FIG. 2 is an explanatory diagram of the operation of the electric element testing apparatus in the first embodiment of the present invention. [Diagram 32] FIG. 2 is an explanatory diagram of the operation of the electric element testing apparatus in the first embodiment of the present invention. [Diagram 33] FIG. 2 is an explanatory diagram of the operation of the electric element testing apparatus in the first embodiment of the present invention. [Diagram 34] FIG. 11 is an explanatory diagram of the operation of the electric element testing apparatus according to the second embodiment of the present invention. [Diagram 35] FIG. 11 is an explanatory diagram of the operation of the electric element testing apparatus according to the third embodiment of the present invention. [Diagram 36] FIG. 13 is an explanatory diagram of the operation of the electric element testing apparatus according to the fourth embodiment of the present invention. [Figure 37] FIG. 13 is an explanatory diagram of the operation of the electric element testing apparatus according to the fourth embodiment of the present invention. [Figure 38] FIG. 2 is an explanatory diagram of a power semiconductor element. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0017] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an electric element testing apparatus for a power cycle test or the like and an electric element testing method according to embodiments of the present invention will be described with reference to the accompanying drawings.

[0018] In the embodiments described in the specification, an IGBT is taken as an example of a power semiconductor element. The present invention is not limited to IGBTs, and can be applied to various power semiconductor elements such as SiC, MOSFETs, JFETs, and transistors. The present invention is also applicable not only to transistors, but also to two-terminal elements such as diodes.

[0019] Furthermore, it goes without saying that the present invention is not limited to power semiconductor elements, but can also be applied to electronic elements such as low-power semiconductor elements, semiconductor elements for signal control, resistor elements, capacitors, coils, quartz oscillators, thermistors, etc.

[0020] In the drawings for explaining the embodiments of the invention, elements having the same functions are given the same reference numerals, and descriptions thereof may be omitted. In addition, the embodiments of the present invention may be combined with each other.

[0021] 8 is a configuration diagram of a power cycle test apparatus (semiconductor element test apparatus) of the present invention. The power cycle test apparatus has a chiller (cooling / warming device) 136, a heating / cooling plate 134, and a circulating water pipe 135 that circulates water between the heating / cooling plate 134 and the chiller 136. A transistor 117 is mounted on the heating / cooling plate 134 as a semiconductor element to be tested. The test conditions are set by varying the current Id, the gate voltage Vgs, and the voltage Vce so that the temperature information Tj of the transistor 117 to be tested becomes a predetermined value.

[0022] If the temperature information Tj changes, it is determined that the transistor 117 has deteriorated or the characteristics have changed, and the test of the transistor 117 is stopped or the control method is changed.

[0023] In the following description, the current Id is applied to or passed through the transistor 117, but the present invention is not limited to this. It goes without saying that Id may be a current that changes over a predetermined period or time. Also, Id is not limited to a current, and may be a voltage.

[0024] A change in the temperature information Tj is used to determine or evaluate a change in the characteristics of the transistor 117. Also, the change in characteristics, reliability, and lifespan of the transistor 117 are evaluated based on the time it takes for the voltage Vce to reach a predetermined voltage, the time it takes for the transistor 117 to break down, and the like.

[0025] In the semiconductor testing method of the present invention, the external conditions are changed according to the deterioration or characteristic change of transistor 117. For example, if transistor 117 generates heat, the water temperature is lowered. Lowering the water temperature reduces the current flowing through transistor 117, which prevents the deterioration and characteristic change of transistor 117 from progressing, and as a result, the lifespan of transistor 117 is extended. Therefore, the lifespan and reliability characteristics of transistor 117 for a given set of conditions can be quantitatively measured and determined.

[0026] The temperature of the transistor 117 is maintained at a specified or predetermined value by heating or cooling the circulating water of the chiller 136. Also, the temperature of the transistor etc. is periodically changed in response to the test conditions, and is cooled or heated to a constant value. Temperature information Tj of the test transistor is measured, and the chiller 136 is controlled so as to maintain the measured temperature information Tj at a constant value.

[0027] Chillers are designed to keep the temperature of equipment constant by circulating water or heat transfer medium while controlling its temperature. They are primarily used for cooling, but can also heat as well as cool. They are designed to control a variety of temperatures.

[0028] The control rack 131 includes a power supply device 132 that supplies a test current and a test voltage to the transistor 117, and a control circuit 133 that controls the transistor 117 or sets test conditions.

[0029] Temperature information Tj of the transistor 117 is input to the control circuit 133, and the control circuit 133 controls the chiller 136 based on the temperature information Tj. Alternatively, the control circuit 133 controls the chiller 136 so as to set the temperature information Tj to a predetermined value.

[0030] Although circulating water is described in this specification, it is not limited to water. Ethylene glycol, glycerin, freon, etc. may also be used, and forced air cooling may also be used. Chiller 136 controls the liquid in circulating water pipe 135 to a temperature range of, for example, -1°C to +100°C, and supplies it to heating / cooling plate 134 of the test unit. Heating / cooling plate 134 has a sufficiently large heat capacity.

[0031] In the above embodiment, the heating / cooling plate 134 is used, but the heating plate and the cooling plate may be separate bodies, and heating / cooling may be performed using a heat source / cold source other than the heating / cooling plate.

[0032] Fig. 11 is a configuration diagram of a semiconductor device testing apparatus (for example, a power cycle testing apparatus for testing a power transistor) in a first embodiment of the present invention, and Fig. 29 is an equivalent circuit diagram or explanatory diagram of the semiconductor device testing apparatus.

[0033] The power supply device 132 has a current power supply circuit 121 and a switch circuit 122. The current power supply circuit 121 outputs a large constant current Id for testing the transistor 117. The current power supply circuit 121 supplies power (current, voltage) in synchronization with a control signal from the control circuit board 111 (controller 111), and uses the supplied power to drive the load at a set constant current or constant voltage. The current power supply circuit 121 can also set a maximum voltage value to be output.

[0034] The switch circuit 122 (SWa) turns on (supply) and off (cut) the supply of the constant current output by the current power supply circuit 121. The switch circuit 122 is set or controlled to be on (output constant current) or off (cut off constant current) based on a signal from the control circuit board (controller) 111. Usually, the switch circuit 122 is turned on before the start of testing, and is constantly maintained in the on state during testing of the semiconductor device.

[0035] 11 illustrates one current power supply circuit 121. The number of current power supply circuits 121 is not limited to one. For example, the semiconductor device testing apparatus of the present invention may have two or more current power supply circuits 121. The more the number of current power supply circuits 121 increases, the more diverse the current waveforms Id that can be generated.

[0036] In the embodiment of the present invention, the power supply device 132 is described as having a current power supply circuit 121 that outputs a current, but the current power supply circuit 121 is not limited to one that outputs a constant current.

[0037] For example, a current power supply circuit 121 capable of setting a maximum voltage is used. An example is a circuit that functions to output a predetermined constant current at a set maximum voltage under certain conditions. Another example is a circuit that is configured so that a predetermined maximum voltage can be set as the output terminal voltage when a constant current is output. It goes without saying that in the semiconductor element testing apparatus of the present invention, the current power supply circuit 121 need not be a device that outputs only a constant current, but may be a power supply device that can output both voltage and current.

[0038] 11 and other embodiments are described assuming that the current Id is generated by the current power supply circuit 121, but the current Id can also be realized by adjusting the applied voltage in accordance with the on-resistance state of the transistor 117. Therefore, it goes without saying that the semiconductor device testing apparatus of the present invention is not limited to the current power supply circuit 121 that outputs a current, and may be configured as a power supply device that outputs a voltage.

[0039] The current Id can also be realized by controlling the voltage value of the gate voltage of the transistor 117. In this specification, a description will be given of applying a predetermined current to the transistor 117 by controlling the current power supply circuit 121. However, this is not limiting, and it goes without saying that the voltage of the gate terminal g of the transistor 117 and the voltage of the collector terminal c of the transistor 117 may be adjusted or controlled.

[0040] In the embodiment of the first semiconductor device testing method of the present invention, for ease of explanation, it is assumed that the constant current Id is generated by the current power supply circuit 121. The current Id flowing through the transistor 117 is supplied by operating the current power supply circuit 121. The current power supply circuit 121 is controlled to be turned on / off by a signal from the control circuit board (controller) 111. The device control circuit board 209 is controlled in timing by the control circuit board (controller) 111.

[0041] An emitter terminal e of the transistor 117 is grounded (connected to a ground line). A gate terminal g of the transistor 117 is connected to the gate driver circuit 113.

[0042] A gate driver circuit 113, a variable resistance circuit 125, a constant current circuit 118, and an operational amplifier (buffer circuit) 116 are arranged or formed in the sample connection circuit 203. The sample connection circuit 203 is arranged separately from the device control circuit board 209 so that it can be arranged in the vicinity of the transistor 117 to be tested.

[0043] It is preferable to provide one sample connection circuit 203 for each transistor 117 to be tested, but this is not limited thereto, and one sample connection circuit 203 including multiple signal circuits may be provided for multiple transistors 117.

[0044] The sample connection circuit 203 is connected to the transistor 117 via a connection pin 206 of the connector 202. The gate driver circuit 113 and the gate terminal g of the transistor 117 are arranged so as to have a short distance of 30 mm or less between them. If the distance between the gate driver circuit 113 and the gate terminal g of the transistor 117 is long, noise or the like is superimposed on the gate terminal g, causing the transistor 117 to malfunction, directly leading to the destruction of the transistor 117.

[0045] 9, the device control circuit board 209 is placed in room B of the housing 210 of the semiconductor device testing equipment. The housing 210 is a frame or device body in which the power supply device 132, the drive circuit, and the heating / cooling plate 134 of the semiconductor device testing equipment are incorporated. The sample connection circuit 203 is placed in room C1 of the housing 210 of the semiconductor device testing equipment in order to be located close to the transistor 117 to be tested. The sample connection circuit 203 is connected to a connector 208 placed on the side of the housing 210. Wiring connected to a connection pin 206 of the connector 208 is connected to the device control circuit board 209 in room B.

[0046] The housing 210 is not limited to a box-like one, but may be, for example, a room. The current power supply circuit 121 is arranged in the room. The partition walls 214, 215, and 217 may be walls of the room.

[0047] 9, a semiconductor element 117 (transistor, etc.) to be tested is placed in chamber C1. The transistor 117, etc. are placed and fixed in close contact with the heating and cooling plate 134. If necessary, as shown in FIG. 15, the transistor 117 and the like are sandwiched and fixed between a heating / cooling plate 134a and a heating / cooling plate 134b.

[0048] As described above, in the present invention, the housing 210 is divided into a plurality of regions such as the C1 chamber. The C1 chamber is configured to be injected with dry air (dry gas, gas with a low dew point temperature). Air pressure is applied to the C1 chamber, and the air injected into the C1 chamber is discharged through the opening 216, etc.

[0049] 1, 9, etc., the connection structure 218 is inserted from the C2 chamber through the opening 216 of the partition wall 217. By inserting the connection structure 218, an electrical connection is established between the element terminal 226 of the transistor 117 and the connection structure 218, and a constant current (test current) Id can be applied to the transistor 117. Also, as shown in FIGS. 23 and 24, the connection structure 218 is placed in a groove in the support base 323, and inserted into the element terminal 226 of the transistor 117. By inserting the connection structure 218, an electrical connection is established between the element terminal 226 of the transistor 117 and the connection structure 218.

[0050] The partition wall 217 has a function of electrostatic shielding and holding the connection structure 218. It goes without saying that the partition wall 217 can be omitted if a separate electrostatic shielding functional component, a fixing or holding stand for the connection structure 218 is disposed or configured. Furthermore, it goes without saying that when the partition wall 217 is not provided, the element terminal 226 of the transistor 117 may be positioned and fixed to the connection structure 218 .

[0051] The partitions (partitions 214, 215, 217) have the function of separating each chamber (chamber C1, chamber C2, chamber A, chamber B) and the function of preventing outside air from flowing in. In particular, dry air is flowed into chamber C1 because condensation may occur in chamber C1 during testing at low temperatures. The dry air that flows into chamber C1 is exhausted to the other chambers through opening 216. However, if the opening of opening 216 is large, a large amount of dry air is required. Therefore, it is preferable that opening 216 is sized so that fork plug 205 and connection structure 218, which serve as connecting members, can be inserted just right.

[0052] A fixing screw 221 is attached to the other end of the connection structure 218, and the connection wiring 211 is connected to the connection structure 218. A fork plug 205 is attached to the other end of the connection wiring 211 as a connection member. The connection structure 218 is made of copper or a copper alloy and has a silver or nickel plated surface.

[0053] The fixing screw 221 is not limited to a screw, and may be anything that can electrically connect the connection wiring 211 to the connection structure 218. Needless to say, the fixing screw 221 may be one that can make contact by pressing with a spring (not shown).

[0054] The sample connection circuit 203 is connected to a device control circuit board 209 by a connection pin 206 of a connector 208. The sample connection circuits 203 are individually arranged corresponding to each transistor 117 to be tested, and the sample connection circuits 203 are configured so as to be easily removable. The connectors 208 and 213 are not limited to connectors, and may be any connectors that can electrically connect and disconnect wiring.

[0055] 3A and 3B are explanatory diagrams of a connection structure 218 in a semiconductor device testing apparatus according to the present invention. Fig. 3A is a diagram showing a schematic back surface, and Fig. 3B is a diagram showing a schematic side surface.

[0056] The heat pipe 223 is in intimate contact with the recess 234 on the surface of the connection structure 218. Thermally conductive grease or heat dissipating silicone oil compound may be applied between the surface of the connection structure 218 and the heat pipe.

[0057] In the connection structure 218 of the present invention, a heat pipe 223 is disposed on the side of a connecting metal part 233. It is preferable that the heat pipe metal part 231 and the connecting metal part 233 are integrated together. The connecting metal part 233 and the element terminal 226 are in electrical contact with each other, and a test current is supplied to the semiconductor element 117 or the like.

[0058] The connecting fitting 232 comes into contact with the element terminal 226, and holds the element terminal 226 between the connecting fitting portion 233 and the connecting fitting 232. The connecting fitting 232 is not required to be a conductive material such as metal. It is preferable to configure the connecting fitting 232 so that the test current does not flow to the side of the connecting fitting 232.

[0059] Connection structure 218 of the present invention is formed with recess 234, and heat pipe 223 is formed to be fitted into recess 234. A material having a linear expansion coefficient of heat pipe metal fitting 231 of connection structure 218 is used which is smaller than that of heat pipe 223.

[0060] The connection portion of the connection structure 218 with the element terminal 226 generates heat, and the connection structure 218 is heated. Therefore, the heat pipe 223 and the heat pipe metal fitting 231 are heated. Due to the heating, the heat pipe 223 and the heat pipe metal fitting 231 expand.

[0061] In the present invention, a material having a linear expansion coefficient smaller than that of the heat pipe 223 is used for the heat pipe metal fitting 231 of the connection structure 218, or a material having a linear expansion coefficient larger than that of the heat pipe 223 is used for the heat pipe 223 of the connection structure 218. The material of the heat pipe 223 expands more in the recess 234, and the heat pipe 223 is more firmly fitted into the recess 234. Therefore, the heat pipe 223 will not come off.

[0062] Examples of materials for the heat pipe metal fitting 231 include copper (linear expansion coefficient 16.8), brass (linear expansion coefficient 19), iron (linear expansion coefficient 12.1), and stainless steel (SUS304) (linear expansion coefficient 17.3). Examples of materials for the heat pipe 223 include materials with a linear expansion coefficient greater than that of the heat pipe metal fitting 231, such as aluminum (linear expansion coefficient 23), tin (linear expansion coefficient 26.9), and lead (linear expansion coefficient 29.1). Of these, it is preferable to use copper (linear expansion coefficient 16.8) for the material of the heat pipe metal fitting 231 and aluminum (linear expansion coefficient 23) for the material of the heat pipe 223.

[0063] The rate at which length changes in response to an increase in temperature is called the linear expansion coefficient. Similarly, the rate at which volume changes is called the volumetric expansion coefficient. If the linear expansion coefficient is α and the volumetric expansion coefficient is β, then there is a relationship: β ≒ 3α. The thermal expansion coefficient indicates the rate at which an object's length and volume expand (thermal expansion) due to an increase in temperature, per unit of temperature. It is also called the thermal expansion coefficient.

[0064] In the present invention, it is preferable that a material having a linear expansion coefficient smaller than that of the heat pipe 223 pipe of the heat pipe fitting 231 of the connection structure 218 is used, or that a material having a linear expansion coefficient larger than that of the heat pipe fitting 231 of the heat pipe fitting 223 of the connection structure 218 is used, but it goes without saying that the linear expansion coefficient may be replaced with the thermal expansion coefficient or the volumetric expansion coefficient.

[0065] The recess 234 is formed in the heat pipe fitting 231. The heat pipe 223 is disposed so as to fit into the recess 234. By disposing the heat pipe 223 in the recess, the risk of the heat pipe 223 being damaged is reduced.

[0066] The heat pipe metal fitting 231 is made of a metal that has good electrical and thermal conductivity. Examples of the metal include copper and silver. Other non-metallic materials such as carbon can also be used.

[0067] It is preferable to use thermally conductive grease that contains boron nitride (boron). It is preferable to use heat dissipating silicone oil compound that uses silicone oil as a base oil and mixes powder with good thermal conductivity such as alumina. The heat pipe 223 is a sealed container in which a small amount of liquid (working liquid) is vacuum sealed, and the inner wall has a capillary structure (wick).

[0068] When part of the heat pipe is heated, the working fluid evaporates in the heated area (absorbing the latent heat of evaporation), and the vapor moves to the low-temperature area at high speed (sonic speed). The vapor condenses in the low-temperature area (releasing the latent heat of evaporation), and the condensed working fluid flows back to the heated area due to the capillary action of the wick. The above phase changes are repeated continuously without any external force, and heat is transferred instantly, allowing the heat generated at the terminals of the semiconductor element to be transferred quickly and efficiently.

[0069] The heat pipe 223 is composed of an array of multiple containers (copper pipes). The inside of the container is in a highly decompressed state, and contains a wick (capillary structure) and an appropriate amount of working fluid (pure water, etc.). As the working fluid, in addition to pure water, methanol (methyl alcohol), acetone, sodium, mercury, fluorocarbon refrigerants, and ammonia may be used. Wick materials include aluminum, copper, stainless steel, sintered alloy, wire mesh, foamed metal, and ceramics.

[0070] The connection structure 218 is not limited to metal. It goes without saying that it may be made of a nonmetallic material such as ceramic, graphite, or a composite material of graphite and copper or aluminum. In the case where a current is directly applied to the connection structure 218, the connection structure 218 is made of a metal material such as copper. The surface of the connection structure 218 is preferably plated with silver, nickel, or the like.

[0071] 3, the connection structure 218 is mainly composed of a heat pipe metal fitting 231, a connection metal fitting 232, and a connection metal fitting portion 233. Between the connection metal fitting 232 and the connection metal fitting portion 233, an element terminal 226 of the semiconductor element is inserted.

[0072] 12 is an explanatory diagram of a semiconductor element 117 to be tested. A transistor is shown as an example of the semiconductor element 117. The transistor 117 has a P terminal (collector terminal of the transistor 117) to which a large current is applied, and an N terminal (emitter terminal of the transistor 117) to which a large current is applied. A diode Di is formed or added between the emitter terminal and the collector terminal. A test current Id is applied to the P terminal and the N terminal.

[0073] A collector terminal c, a gate terminal g, and an emitter terminal e are arranged in the transistor 117. A signal Vgs for turning on and off the transistor 117 is applied to the gate terminal g. A constant current Ic is applied to the diode Di from a constant current circuit 118 between the emitter terminal e and the collector terminal c.

[0074] Contact parts 225a and 225b are disposed between the connecting fitting 232 and the connecting fitting part 233. Platinum, gold, silver, tungsten, copper, nickel, or an alloy of a combination thereof is used as the contact part 225. It is also preferable to use silver-oxide contact materials (Ag+ZnO, Ag+SnO2, Ag+SnO2In2O3, Ag+, Ag+SnO2Sn2Bi2O7).

[0075] As an example, the connection fitting part 233 is integrated with the heat pipe fitting 231. The connection fitting 232 is fixed to the connection fitting part 233 with a fixing screw 224b. The element terminal 226 of the semiconductor element is fixed by tightening the fixing screw 224b. The connection wiring 211 is fixed to the left end of the heat pipe fitting 231 with a fixing screw 221.

[0076] 15 is an explanatory diagram of a state in which the element terminal 226 is connected to the connection structure 218. The element terminal 226 is sandwiched between the contact portion 225a and the contact portion 225b. The connection metal fitting 232 is fixed to the element terminal 226 by a fixing screw 224b.

[0077] The transistor 117 is fixed to a heating / cooling plate 134a, and is further sandwiched between heating / cooling plates 134b. The transistor 117 is appropriately maintained at a test temperature by the heating / cooling plates 134. A heat pipe 223 is attached in the recess 234.

[0078] A test constant current Id is applied from the connection structure 218 to the element terminal 226. The constant current Id is large, at several hundred amperes (A). The element terminal 226 is small, and there is contact resistance between the contact portion 225 and the element terminal 226. Therefore, when a large current flows through the element terminal 226, heat is generated at the contact portion 225.

[0079] The heat is conducted to the transistor 117 under test, overheating the transistor 117. Overheating may cause deterioration of the transistor 117 or burning of the element terminal 226. Therefore, the heat generated at the contact portion 225 must be dissipated quickly.

[0080] The connection structure 218 of the present invention has a heat pipe 223. The heat generated at the contact portion 225 is transferred by the heat pipe 223. Therefore, the heat at the contact portion 225 is quickly removed from the contact portion 225.

[0081] A partition wall 217 is disposed between the C1 chamber and the C2 chamber. As shown in Fig. 14, an opening 216 is formed in the partition wall 217. A connection structure 218a1 is inserted into the opening 216a1, and a connection structure 218b1 is inserted into the opening 216b1. A connection structure 218a2 is inserted into the opening 216a2, and a connection structure 218b2 is inserted into the opening 216b2. A connection structure 218an is inserted into the opening 216an, and a connection structure 218bn is inserted into the opening 216bn.

[0082] 36, the P terminal of the transistor 117Q1 to be tested is clamped and electrically connected between the connecting fitting 232 and the connecting fitting portion 233 of the connection structure 218a1. Also, the N terminal of the transistor 117Q1 to be tested is clamped and electrically connected between the connecting fitting 232 and the connecting fitting portion 233 of the connection structure 218b1.

[0083] Similarly, the P terminal of the transistor 117Q2 to be tested is sandwiched and electrically connected between the connecting fitting 232 and the connecting fitting portion 233 of the connecting structure 218a2. Moreover, the N terminal of the transistor 117Q2 to be tested is sandwiched and electrically connected between the connecting fitting 232 and the connecting fitting portion 233 of the connecting structure 218b2.

[0084] Similarly, the P terminal of the transistor 117Qn to be tested is sandwiched and electrically connected between the connecting fitting 232 and the connecting fitting portion 233 of the connecting structure 218an. Moreover, the N terminal of the transistor 117Qn to be tested is sandwiched and electrically connected between the connecting fitting 232 and the connecting fitting portion 233 of the connecting structure 218bn.

[0085] An electromagnetic shield plate, electrostatic shield plate, or electromagnetic shield net is arranged on the partition wall 217, which blocks noise from the power supply device 132 and the drive circuit system of the chamber B, and the noise is not applied to the chamber C1. In addition, noise generated by turning on and off the transistor 117 is not applied to the drive circuit system of the chamber B.

[0086] 1 is an explanatory diagram illustrating the connection state between the transistor 117 and the connection structure 218. The transistor 117 is fixed in close contact with the heating and cooling plate 134a. The fixing is performed by a spring (not shown). The adhesion may be achieved by applying thermally conductive grease or a silicone oil compound for heat dissipation. If necessary, as shown in FIG. 15, a heating and cooling plate 134b is also disposed above the transistor 117 so that the transistor 117 can be set to a predetermined temperature condition.

[0087] A connector 202 is connected to the terminals (emitter terminal e, gate terminal g, collector terminal c) of the transistor 117. A signal wiring 222 is drawn out to the connector 202. A control signal Vgs to be applied to the gate terminal g of the transistor 117 and a constant current Ic from a constant current circuit 118 are applied to the signal wiring 222.

[0088] The connection structure 218a is inserted into the opening 216a of the partition wall 217 from the C2 chamber side. The connection structure 218b is similarly inserted into the opening 216b of the partition wall 217 from the C2 chamber side. When the connection structure 218 is inserted, the element terminal 226 is sandwiched between the connection fitting 232 and the connection fitting portion 233. In this state, the element terminal 226 of the transistor 117 and the connection structure 218 are electrically connected by tightening the fixing screw 224b.

[0089] The transistors 117 to be tested need to be fixed in close contact with the heating and cooling plate 134, and therefore cannot be easily removed. The installation work of the transistors 117 begins with fixing the multiple transistors 117 to be tested to the heating and cooling plate 134. Next, the transistor 117 to be tested first is selected, and a connection structure 218 is attached to the element terminal 226.

[0090] The selected transistor 117 is electrically connected to the element terminal 226 by inserting a connection structure 218 from the C2 chamber side into the opening 216 in which the selected transistor 117 is located.

[0091] Electrical connection with the transistor 117 is easy since it is only necessary to select the position for inserting the connection structure 218. In addition, by changing the signal applied to the connection wiring 211 connected to the connection structure 218, the test conditions and test contents of the transistor 117 can be easily changed.

[0092] The element terminal 226 is clamped by applying pressure between the contact parts 225a and 225b. A connection wiring 211 is connected to one end of the connection structure 218, and a constant current Id is applied from the connection wiring 211 to the transistor 117. A heat pipe 223 is disposed on the back side of the connection structure 218.

[0093] A current of several hundred amperes (A) flows through element terminal 226. Even if there is a slight resistance in contact portion 225, a current of several hundred amperes (A) generates a large amount of heat, overheating element terminal 226. If this occurs, transistor 117 will also be overheated, causing transistor 117 to deteriorate or break down.

[0094] In the present invention, heat generated at contact point 225 is transferred to connection wiring 211 of connection structure 218 by heat pipe 223. Therefore, contact point 225 does not overheat. A cooling fan 227 is disposed below connection structure 218 to dissipate heat from heat pipe 223. FIG. 2 is an explanatory diagram for explaining a method of connecting a semiconductor element 117 and a connection structure 218 in the semiconductor testing device of the present invention.

[0095] A partition 217 is provided between the C1 chamber and the C2 chamber. An opening 216 is formed in the partition 217 in correspondence with the positions of the transistors 117 to be tested, etc., as shown in Fig. 14. The opening 216 of the partition 217 and a fixing base (not shown) of the connection structure 218 allow the connection structure 218 to be positioned horizontally or stably and fixed.

[0096] 2(a), the transistor 117 to be tested is positioned and fixed in close contact with the heating and cooling plate 134a. Thermally conductive grease and silicone oil compound for heat dissipation are applied between the transistor 117 and the heating and cooling plate 134a.

[0097] A detachable connector 202 is connected to the terminals (emitter terminal e, gate terminal g, collector terminal c) of the transistor 117. A signal wiring 222 is connected to the connector 202, and the signal wiring 222 is connected to a sample connection circuit 203.

[0098] The signal wiring 222 between the sample connection circuit 203 and the connector 202 is formed to be as short as possible. If the signal wiring 222 is long, noise is superimposed on the signal wiring 222, causing the transistor 117 to malfunction. For example, if noise is superimposed on the gate terminal g of the transistor 117, the transistor 117 may turn on and break down. The signal wiring 222 should be twisted or a shielded wiring such as a coaxial cable should be used.

[0099] 9, the connector 208 is provided on the side of the housing 210, and the connector 208 and a device control circuit board 209 arranged in room B are connected by signal wiring 235. Control signals or output signals of the gate driver circuit 113, the gate signal control circuit 112, the temperature measurement circuit 115, the variable resistance circuit 125, and the operational amplifier circuit 116 are input / output from / to the device control circuit board 209.

[0100] 2(b), the connection structure 218a is inserted into the opening 216a. By inserting the connection structure 218a into the opening 216a, the element terminal 226a of the transistor 117 is sandwiched between the connection fitting 232 at the tip of the connection structure 218a and the connection fitting portion 233. After the connection structure 218a and the element terminal 226a are coupled together, the fixing screw 224b1 is tightened to achieve good electrical connection between the contact portion 225 and the element terminal 226.

[0101] Similarly, connection structure 218b is inserted into opening 216b. By inserting connection structure 218b into opening 216b, element terminal 226b of transistor 117 is sandwiched between connection fitting 232 at the tip of connection structure 218b and connection fitting portion 233. After connection structure 218b and element terminal 226b are coupled, fixing screw 224b2 is tightened to achieve good electrical connection between contact portion 225 and element terminal 226.

[0102] A cooling fan 227 for removing heat from the heat pipe 223 is disposed on the rear surface of the connection structure 218. The rotation speed of the cooling fan 227 is controlled according to the overheating state of the element terminal 226 and the heat pipe 223.

[0103] 3, the heat pipe 223 is attached to the recess 234 of the heat pipe metal fitting 231 of the connection structure 218. However, the present invention is not limited to this.

[0104] For example, the connection structure 218 may be configured as shown in Fig. 4. In Fig. 4, Fig. 4(a) is a schematic diagram of the back surface (lower surface) of the connection structure 218, and Fig. 4(b) is a schematic diagram of the front surface (upper surface) of the connection structure 218.

[0105] 4, heat pipe 223a is disposed on concave surface 234a. Heat pipe 223a is formed or disposed up to connecting metal fitting portion 233. By forming or disposing heat pipe 223a up to connecting metal fitting portion 233, heat generated by element terminal 226 can be transferred more efficiently.

[0106] 4(b), the heat pipe 223b is disposed on the concave surface 234b. By disposing the heat pipe 223 on both sides of the connection structure 218, the heat generated by the element terminal 226 can be transferred more efficiently.

[0107] 3 and the like, the heat pipe 223 and the like are cooled by the cooling fan 227, but the present invention is not limited to this. For example, as shown in Fig. 5, the heat dissipation fins 228 may be formed or arranged so as to be in close contact with the heat pipe 223. The heat transferred inside the heat pipe 223 is efficiently transferred to the heat dissipation fins 228, and the heat transfer and heat dissipation effect of the heat pipe 223 is further improved.

[0108] 5 is not formed or arranged in a location corresponding to the opening 216. The connection structure 218 is inserted from the C2 chamber to the C1 chamber side through the opening 216. In order to maintain the airtightness of the C1 chamber, the opening 216 has a size equal to the cross-sectional area of ​​the connection structure 218 plus α. Therefore, if the heat dissipation fin 228 is formed or arranged on the connection structure 218, it cannot be inserted into the opening 216. Therefore, the heat dissipation fin 228 is not formed or arranged on the side connected to the element terminal 226 of the transistor 117 with respect to the partition wall 217.

[0109] 6, a circulating water pipe 135 may be formed or disposed in the connection structure 218 to cool the connection structure 218. The connection structure 218 is cooled by the refrigerant flowing in the circulating water pipe, and the heat in the heat pipe 223 is efficiently transferred to the connection structure 218. Therefore, the heat generated in the element terminal 226 is efficiently dissipated.

[0110] In the transistor 117 (semiconductor element 117) in Fig. 12, the element terminal 226 has two terminals, that is, element terminal 226a (P) and element terminal 226b (N). However, as shown in Fig. 13, there is also a transistor 117 in which the element terminal 226 has three terminals, that is, element terminal 226a (P), element terminal 226b (N), and element terminal 226c. The semiconductor element testing apparatus and semiconductor element testing method of the present invention are capable of testing a wide variety of semiconductor elements 117.

[0111] 13, two transistors, a transistor 117m and a transistor 117s, are arranged in one package. The collector terminal c of the transistor 117s is connected to the element terminal 226a. The emitter terminal e of the transistor 117s and the collector terminal c of the transistor 117m are connected, and the midpoint is connected to the element terminal 226c. The emitter terminal e of the transistor 117m is connected to the element terminal 226b.

[0112] An emitter terminal e1, a gate terminal g1, and a collector terminal c1 are connected to the transistor 117m, while an emitter terminal e2, a gate terminal g2, and a collector terminal c2 are connected to the transistor 117s.

[0113] FIG. 7 is an explanatory diagram illustrating a connection state between a transistor 117 (semiconductor element 117) having three element terminals 226 (element terminal 226a (P), element terminal 226b (N), element terminal 226c (O)) and a connection structure 218.

[0114] In FIG. 7, the connection between the connection structure 218a and the element terminal 226a, and the connection between the connection structure 218b and the element terminal 226b are similar to those described in FIG. 1 and FIG. 2, and therefore will not be described.

[0115] In FIG. 7, the heat pipe 223a is formed or arranged in the connection structure 218a, and the heat pipe 223b is formed or arranged in the connection structure 218b, whereas the heat pipe 223 is not formed or arranged in the connection structure 218c. The connection structure 218c is connected to the element terminal 226c. A large current does not flow through the element terminal 226c(O) of the transistor 117. Therefore, the element terminal 226c does not overheat. There is no need to form the heat pipe 223 in the connection structure 218c. The connection structure 218c is formed thinner than the other connection structures 218 (connection structures 218a, connection structures 218b), which makes it easier to connect the connection structure 218 and the element terminal 226 of the transistor 117. In addition, since the space for arranging the transistor 117 may be narrow, the number of transistors 117 that can be mounted on the heating / cooling plate 134 can be increased.

[0116] Needless to say, the heat pipe 223 may be formed or disposed in the connection structure 218c. Other details are the same as or similar to the embodiment in Figures 1 and 2, and therefore description thereof will be omitted.

[0117] 15, the element terminal 226 is sandwiched between the contact portions 225a and 225b to establish an electrical connection. The current supplied to the element terminal 226 of the transistor 117 mainly flows through the connecting metal part 233, but some current flows from the connecting metal part 232 to the element terminal 226. The current flowing through the connecting fitting 232 flows in the following order: fixing screw 224 b , connecting fitting 232 , contact portion 225 b , and element terminal 226 . The current flowing through the element terminal 226 can be as large as several hundred amperes, and if the connection resistance is high at the fixing screw 224b or the like, heat will be generated and the heat generating portion will burn out.

[0118] Although this specification and drawings depict a metal fitting having electrical conductivity, such as the metal fitting 232, the metal fitting 232 is not required to be made of a conductive metal. It goes without saying that the metal fitting may be made of a resin material or the like. FIG. 16 is an explanatory diagram illustrating a method and structure for connecting a connection structure 218 and an element terminal 226 in another embodiment of the present invention.

[0119] The element terminal 226 is sandwiched between the pressing tool mounting plate 313 and the connecting metal part 233. Pressing tool 311a and pressing tool 311b are attached to the pressing tool mounting plate 313. The pressing tool 311 is, for example, a leaf spring made of metal. The pressing tool 311 may be formed of a non-conductive material such as a silicon resin material. The pressing tool 311 is fitted into the pressing tool mounting plate 313. It is preferable that the surface of the pressing tool 311 is roughened so that the element terminal 226 can be appropriately pressed.

[0120] The element terminal 226 is clamped between the flat surfaces of the pressing tool 311 and the connecting metal part 233. The element terminal 226 and the connecting metal part 233 are electrically connected by the pressure of the pressing tool 311. The pressing tool 311 is not required to be conductive.

[0121] It is preferable that the connection metal fitting 233 is configured as one piece with the heat pipe metal fitting 231. The connection metal fitting 232 is fixed to the connection metal fitting 233 with a fixing screw 224b. The element terminal 226 of the semiconductor element is fixed by tightening or positioning the fixing screw 224b. The connection wiring 211 is fixed to the left end of the heat pipe metal fitting 231 with a fixing screw 221. The connecting fitting portion 233 is connected and fixed to the connecting fitting 232 by screws 224b inserted into the screw holes 238b1 and 238b2.

[0122] The screw 224 may be made of, but is not limited to, a metal material such as phosphor bronze or stainless steel. It may also be made of a non-conductive material such as a resin material. Alternatively, it may be made of a cushioning material such as a sponge.

[0123] The pressing tool mounting plate 313 has convex portions 251 formed on both ends, and the connecting fitting 232 has groove portions 252 formed on both ends. The convex portions 251 of the pressing tool mounting plate 313 are fitted into the groove portions 252 of the connecting fitting 232. The convex portions 251 of the pressing tool mounting plate 313 and the groove portions 252 of the connecting fitting 232 are configured to be in electrical contact with each other.

[0124] Fig. 18 is an explanatory diagram and a configuration diagram of the pressure mounting plate 313 of Fig. 16. Fig. 18(a) is a side view of the pressure mounting plate 313, and Fig. 18(b) is a bottom view of the pressure mounting plate 313 as seen from the rear side.

[0125] 18(b), a plurality of pressing tools 311a and a plurality of pressing tools 311b are arranged in a matrix on the back surface of the pressure mounting plate 313. In addition, as shown in FIG. 18(a), the pressing tool 311 is fitted into the pressure mounting plate 313.

[0126] A positioning screw hole 240 is formed in the pressure mounting plate 313, and a positioning fixing screw 237 is inserted into the positioning screw hole 240. In addition, a spring hole 239 is formed in the pressure mounting plate 313, and a spring 236 is inserted into the spring hole 239. In the embodiment of FIG. 16, a spring (pressure fitting) 236 applies an appropriate pressure between the pressing tool 311 and the element terminal 226, thereby maintaining a good electrical connection.

[0127] 16, spring (pressure fitting) 236 is inserted into spring hole 239 of contact portion 225. If spring (pressure fitting) 236, contact portion 225, and connecting fitting 232 are made of conductive materials, electricity may flow from element terminal 226 → contact portion 225 → spring (pressure fitting) 236 → connecting fitting 232. In this case, if the resistance value of spring (pressure fitting) 236 is high, current may flow through spring (pressure fitting) 236, causing the spring to heat up and burn out.

[0128] If the pressing tool 311 is made of a non-conductive material and configured so that no current flows through the pressing tool mounting plate 313, the above-mentioned current path will not be generated and the spring (pressure fitting) 236 will not burn out.

[0129] Fig. 17 is an explanatory diagram and configuration diagram of a connection structure 218 in another embodiment of the present invention. In the embodiment of the present invention in Fig. 17, a spring hole 312 is formed in an insulating plate 312. A pressing tool 311 contacts an element terminal 226, and a spring 236 presses a pressing tool mounting plate 313. An insulating plate 312 is disposed above the pressing tool mounting plate 313, and insulates between the pressing tool mounting plate 313 and the spring 236. A spring hole 239 is formed in the insulating plate 312, and a spring 236 is inserted into the spring hole 239.

[0130] As shown in Fig. 17, pressing tool 311 comes into contact with element terminal 226, and spring 236 presses pressing tool mounting plate 313. An insulating plate 312 is disposed on the upper side of pressing tool mounting plate 313 to provide insulation between pressing tool mounting plate 313 and spring 236. A spring hole 239 is formed in insulating plate 312, and spring 236 is inserted into spring hole 239. Other configurations are similar to those in Fig. 16, so description will be omitted.

[0131] Fig. 19 is an explanatory diagram of the pressing tool attachment plate 313 and insulating plate 312 of the connection structure 218 in Fig. 17. Fig. 19(a) is a side view of the pressing tool attachment plate 313. Fig. 19(b) is a side view of the pressing tool attachment plate 313 as viewed from side A in Fig. 19(a).

[0132] 19, the insulating plate 312 and the protrusion 251 are made of an insulating material, and the spring hole 312 is formed in the insulating plate 312. Therefore, since the spring hole 312 is insulated, no current path is generated in the connecting fitting 232.

[0133] Since insulating plate 312 is made of an insulating material, even if pressing tool attachment plate 313 is made of a conductive material such as metal, no current flows through spring (pressure fitting) 236. Therefore, a current path from element terminal 226 -> contact portion 225 -> spring (pressure fitting) 236 -> connecting fitting 232 is not generated. The insulating plate 312 may be an insulating film, an insulating film, or an insulating gas such as air, etc. The pressing tool attachment plate 313 may be made of a non-conductive material.

[0134] 17 has a configuration in which insulation is performed by insulating plate 312. The insulating effect of the present invention is not limited to the configuration in which insulating plate 312 is used as in Fig. 17. For example, a configuration shown in Fig. 20 is exemplified.

[0135] Fig. 20 shows a configuration in which an insulating section 315 made of a resin material or the like is arranged around the screw hole 238b of the connecting fitting 232. Fig. 22 is a configuration diagram of the connecting fitting 232 of Fig. 20 as seen from the back. As shown in Fig. 22, the periphery of the screw hole 238b is surrounded by insulating section 315 so that the screw can be insulated. Note that fixing screws 224b made of an insulating material may also be used.

[0136] No current flows through fixing screw 224b because the periphery of screw hole 238b is insulated by insulating section 315. Therefore, no current path is generated from element terminal 226 → contact section 225 → spring (pressure fitting) 236 → connecting fitting 232, and spring (pressure fitting) 236 will not burn out. As described above, the present invention is configured such that insulating plate 312 is disposed on the side of spring 236 that applies pressure, so that current does not flow to pressure tool attachment plate 313 and contact portion 225 side.

[0137] When a current flows, it flows through pressing parts such as spring 236 and fixing screw 224b, and causes spring 236 and fixing screw 224b to burn out. Current is supplied to element terminal 226 via connecting metal fitting 233 side where there are fewer electrically high resistance parts such as spring 236.

[0138] 16, 17 and 20 show an embodiment of the connection structure 218 having the pressing tool 311. The present invention is not limited to this, and may have a configuration as shown in FIG. 21, for example.

[0139] 21 shows a configuration in which an element terminal 226 is sandwiched between a contact portion 225 and a connecting metal fitting 233. By roughening the surface of the contact portion 225, it is possible to apply pressure uniformly to the element terminal 226. By making the contact portion 225 out of an insulating material, it is possible to prevent a current path from occurring in the connecting metal fitting 232.

[0140] Needless to say, preventing a current path from occurring on the connecting fitting 232 side can also be achieved by making the fixing screw 224b and the connecting fitting 232 out of insulating material.

[0141] In the electrical element testing apparatus of the present invention, as illustrated and explained in Figures 1, 14, etc., one end of the connection structure 218 is connected to the element terminal 226 of the semiconductor element 117 by inserting the connection structure 218 into the opening 216. However, the present invention is not limited to this. For example, the configurations illustrated in Figures 23 and 24 are exemplified.

[0142] Fig. 23 is an explanatory diagram of connection structure 218 of the electrical element testing apparatus of the present invention as viewed from the front. Fig. 24 is an explanatory diagram of connection structure 218 of the electrical element testing apparatus of the present invention as viewed from above. A cooling fan 227 is disposed on the side, and the fan cools heat pipe 223 of connection structure 218.

[0143] 23, the top of the page is the upper side of the heater / cooler 322, and the bottom of the page is the lower side. As an example, the heater / cooler 322 has two electric element insertion holes 324, and the electric element 117 is inserted into the electric element insertion holes 324 in close contact with the heater / cooler 322. A connection structure 218a is connected to an element terminal 226a of the electric element 117, and a connection structure 218b is connected to an element terminal 226b of the electric element 117.

[0144] A circulating water pipe 135 is attached to the heater / cooler 322, and circulating water flows in through the circulating water pipe 135a, circulates inside the heater / cooler 322, and is discharged from the circulating water pipe 135b. The circulating water maintains the electric element 117 at a predetermined temperature.

[0145] The connection structure 218 is placed in the slide groove 325 of the support base 323 , and the connection structure 218 is slid along the slide groove 325 so that the connection fittings 232 and the connection fitting portions 233 of the connection structure 218 are electrically connected to the element terminals 226 .

[0146] 25 illustrates the fork plug 205 and the connection (contact) state between the fork plug 205 and the conductor plate 204. Two conductor plates 204 are attached to the switch circuit board 201. The switch circuit board 201 has a full-surface earth layer (not shown), which is thermally connected to the conductor plate 204. Heat from the conductor plate 204 is dissipated via the full-surface earth layer. The conductor plate 204 and the switch circuit board 201 are fixed with screws.

[0147] Although the present specification and drawings will be described as conductor plate 204, it is not limited to a plate, and may be rod-shaped. Any shape may be used as long as it can be joined to a structure such as fork plug 205. For example, it may be a structure such as a socket or connector. Furthermore, conductor plate 204 may be in the shape of a fork plug, and fork plug 205 may be connected to the fork plug.

[0148] In addition, the fork plug 205 is described as being inserted into a component or structure that separates spaces such as the partition wall 214, but the present invention is not limited to this. For example, the fork plug 205c may be connected to the conductive plate 204b, and the fork plug 205c may be inserted from the partition wall 214 to electrically connect with the emitter terminal e of the transistor 117.

[0149] The partitions 214 and 215 may be of any type so long as they divide or separate spaces or regions, and may have a wide variety of configurations or structures, such as a wall, plate, mesh, film, or foil.

[0150] Fork plug 205 may have any configuration, structure, form, style, or method that allows electrical connection to an object such as conductive plate 204 by press-fitting, pressure welding, insertion, crimping, clamping, fitting, or the like.

[0151] The switch circuit 124 is connected to two conductor plates. As shown in Fig. 30, when the switch circuit 124 is a MOS transistor, the drain terminal and the source terminal are connected to different conductor plates 204. When the switch circuit 124 is a bipolar transistor, the collector terminal and the emitter terminal are connected to different conductor plates 204. When the switch circuit 124 is turned on (conductive), the two conductor plates 204 are electrically connected. An IGBT can also be used as the switch circuit 124.

[0152] The switch circuit 124 is mounted on a switch circuit board 201. The switch circuit 124 is connected to a conductor plate 204 (metal plate, conductive plate). The conductor plate 204 is, for example, a copper plate having a thickness of 5 mm and a width of 50 mm. The length of the conductor plate 204 is the width of the circuit board plus the width for connecting the fork plug 205.

[0153] Fork plug 205 and conductor plate 204 are electrically connected by mechanically fitting them together. When the U-shaped portion of fork plug 205 is inserted into conductor plate 204, the U-shaped portion expands slightly, and fork plug 205 and conductor plate 204 are satisfactorily joined. The satisfactorily joined or fitted portion has extremely low electrical resistance at the connection, and no heat is generated or voltage drops occur even when a large current flows through the connection portion.

[0154] A connection bolt 219 is attached to the fork plug 205. A connection wiring 211 is connected to the connection bolt 219. A cross section taken along line AA' in FIG. 25(a) is shown in FIG. 25(b). The conductive plate 204 and the fork plug 205 are in contact with each other at contact parts 220a and 220b formed on the fork plug 205. The surface of the contact part 220 is silver plated. The contact part 220 is made of phosphor bronze and nickel alloy. The connection bolt 219 is not limited to a bolt, and may be anything that can electrically connect the fork plug 205 and a wire. At least the surface of the conductive plate 204 that comes into contact with the fork plug 205 is plated with silver.

[0155] 10 is a diagram showing the configuration of a semiconductor device testing apparatus according to the present invention. A connection structure 218a is inserted into an opening 216a of a partition wall 217, and a connection structure 218b is inserted into an opening 216b of the partition wall 217.

[0156] Needless to say, as illustrated in FIGS. 23 and 24, the connection structure 218 may be slid into the slide groove 325 of the support base 323 to be connected to the element terminal 226 of the semiconductor element 117 .

[0157] The connection structure 218a is connected to an element terminal 226a of the transistor 117, and the connection structure 218b is connected to an element terminal 226b of the transistor 117. A circulating water pipe 135 is built into the heating / cooling plate .

[0158] A connector 202 is connected to a terminal of the transistor 117, and a signal wiring 222 connected to the connector 202 is connected to a sample connection circuit 203. A signal wiring 235 of the sample connection circuit 203 is connected to a device control circuit board 209 via a connector 208.

[0159] 10 etc., the fork plug 205 and the conductor plate 204 are brought into contact with each other by inserting the fork plug 205 through an opening 216 in the partition wall 214. At the time of contact, the U-shaped portion of the fork plug 205 is expanded by the conductor plate 204, and a firm contact is made.

[0160] 9 shows a layout diagram of each component of the semiconductor device testing apparatus of the present invention. The housing 210 of the semiconductor device testing apparatus is separated into three parts. The lower part of the housing is separated into chamber A and chamber B. The power supply unit 132 is placed in chamber A. Chamber A and chamber B are separated by a partition wall 215.

[0161] Each chamber is shielded. The power supply device 132, switch circuit board 201, and transistor 117 generate large noise as they repeatedly operate and deactivate. Since noise can cause the circuit boards and other components to malfunction, the shielding prevents such malfunctions. The shielding is achieved by placing conductive plates, metal plates, and metal films around each chamber.

[0162] In the C1 room, the heating / cooling plate 134, the circulating water pipe 135, etc. shown in FIG. 8 are arranged, and the transistor 117 to be tested is arranged on the heating / cooling plate 134.

[0163] Partition walls 214 are formed between chamber C1 and chambers A and B. A water leakage sensor (not shown) is disposed around the heating and cooling plate of chamber C1. If circulating water (cooling medium) or the like leaks, the water leakage sensor is activated and is configured to stop the semiconductor device testing equipment or sound an alarm.

[0164] In addition, a drainage groove is formed around the periphery of the heating and cooling plate, so that if circulating water (cooling medium) leaks from the heating and cooling plate, the circulating water (cooling medium) flows into the drainage groove and is discharged outside the semiconductor element testing equipment. As described above, the partition wall 214 is configured so that even if the circulating water pipe 135 is damaged, the circulating water (cooling medium) and the like will not leak into the lower chambers A and B.

[0165] A partition 215 is formed between chamber A in which the power supply unit 132 is disposed and chamber B in which the drive circuit system is disposed. Electrostatic shielding plates are disposed in the partitions 214, 215, and 217 to block noise from the power supply unit 132 and prevent the noise from being applied to the drive circuit system in chamber B.

[0166] In the embodiment of the present invention, the fork plug 205 is inserted from the C2 chamber and connected to the conductive plate 204 in the B chamber. The operation of pushing the fork plug 205 from the top to the bottom is easy. However, the present invention is not limited to this. For example, the conductive plate 204 may be placed in the C2 chamber, and the fork plug 205 may be inserted from the B chamber to establish an electrical connection. Furthermore, the connection structure 218 is inserted from the C2 chamber, and the element terminals 226 of the semiconductor element 117 and the connection structure 218 are connected.

[0167] 9 and other drawings, the connection structure 218 is inserted from the C2 chamber into the C1 chamber, and electrically connected to the element terminal 226 of the transistor 117. Furthermore, the fork plug 205 is inserted from the C2 chamber into the B chamber, and electrically connected to the fork plug 205 and the conductor plate 204. The transistor 117 is fixed to the heating / cooling plate 134, and the switch circuit board 201 is fixed at the position of the mother board 207. The connection structure 218 and the fork plug 205 are electrically connected by the connection wiring 211.

[0168] The position of the opening 216 can be selected with the connection structure 218 to select the transistor 117 to be tested. By selecting the opening into which the fork plug 205 is inserted, the switch circuit board 201 to be controlled can be easily selected and the test method and test conditions can be changed. Therefore, by using the connection structure 218 and the fork plug 205 in the present invention, the transistor 117 can be easily selected and the test method, etc. can be changed in a short time.

[0169] The partitions 214, 215, and 217 may be wall-shaped structures, plate-shaped structures, film-shaped objects, mesh-shaped objects, wire net-shaped objects, etc. One example is phenolic resin (phenolic resin, phenol-formaldehyde resin, phenolic resin). The partitions may be any object that separates the first and second parts of the semiconductor device testing apparatus.

[0170] 26, a connector 213 is attached to a motherboard 207. A control circuit board 111, a device control circuit board 209, and a switch circuit board 201 are attached to the connector of the motherboard 207. The number of switch circuit boards 201 to be prepared according to the number of transistors 117 to be tested can be easily realized by changing the number of switch circuit boards 201 to be attached to the motherboard 207.

[0171] Temperature information Tj, voltage Vi, a control signal for the variable resistance circuit 125, a control signal for the constant current circuit 118, etc. are transmitted to the mother board 207. In addition, power supply wiring and ground wiring for each circuit are formed and supplied to each circuit board via a connector 213. The conductive plate 204 is disposed so as to protrude from the switch circuit board 201. A fork plug 205 is connected to this protruding portion.

[0172] The fork plug 205a is connected to the conductor plate 204a of the switch circuit board 201a. The power supply wiring 212 is connected to the switch circuit board 201a through an opening 216 in the partition wall 215. The fork plug 205d is connected to the conductor plate 204c of the switch circuit board 201b. The power supply wiring 212 is connected to the switch circuit board 201b through an opening 216 in the partition wall 215. The fork plug 205b is connected to the conductor plate 204b of the switch circuit board 201a. The power supply wiring 212 is connected to the switch circuit board 201a through an opening 216 in the partition wall 215.

[0173] 11 and other drawings, a switch circuit 124a is disposed between the conductor plate 204d and the conductor plate 204c of the switch circuit board 201b, and short-circuits the conductor plate 204d and the conductor plate 204c. By short-circuiting, the current Ia outputted from the current power supply circuit 121a is supplied to the transistor 117 as the test current Id.

[0174] A switch circuit 124b is disposed between the conductive plates 204a and 204b of the switch circuit board 201a, and when the switch circuit 124b is turned on, the conductive plates 204a and 204b are short-circuited. When this is done, the current Ia output from the current power supply circuit 121a flows to the ground as a discharge current Im, and the channels of the transistor 117 are short-circuited. When the channels are short-circuited, no overvoltage or overcurrent is applied to the transistor 117.

[0175] A fork plug 205 is connected to the conductive plate 204. A fork plug 205c is connected to the conductive plate 204b. A fork plug 205b is connected to the conductive plate 204a. A fork plug 205e is connected to the conductive plate 204d. A fork plug 205d is connected to the conductive plate 204c.

[0176] Fig. 25 is a configuration diagram of fork plug 205. Fig. 25(a) shows a state in which conductor plate 204 attached to switch circuit board 201 and fork plug 205 are coupled together. Fig. 25(b) shows a coupled state of conductor plate 204 and fork plug 205 when a cross section taken along line AA' in Fig. 25(a) is viewed from the direction of the arrow.

[0177] The fork plug 205 is made of a metal such as aluminum. The surface is nickel-plated and then silver-plated. The fork plug 205 has a threaded groove, and is configured so that the connection wiring 211 can be attached to the fork plug 205 with a connection bolt 219.

[0178] The convex contact portion 220 is made of phosphor bronze or copper alloy. The surface of the contact portion 220 is plated with silver. The insertion force of the fork plug 205 into the conductive plate 204 is set to be 40 to 60 N.

[0179] Platinum, gold, silver, tungsten, copper, nickel, or alloys of combinations thereof may be used for the contact portion 220. It is also preferable to use silver-oxide contact materials (Ag+ZnO, Ag+SnO2, Ag+SnO2In2O3, Ag+, Ag+SnO2Sn2Bi2O7).

[0180] Although two switch circuit boards 201 are shown in FIG. 26, two or more switch circuit boards 201 may be required depending on the number of transistors 117 to be tested, and the switch circuit boards 201 are connected to connectors 213 of a mother board 207 .

[0181] As shown in FIG. 10, the fork plug 205c is inserted through an opening 216 in a partition wall 214 provided between the C2 chamber and the B chamber, and the conductor plate 204b and the fork plug 205c are connected. The transistor 117 to be tested and the heating and cooling plate 134 are arranged in the C1 chamber, and a driving circuit for testing the transistor 117 and the like are arranged in the B chamber. Since the C1 chamber, the C2 chamber, and the B chamber are separated by the partition wall 214, even if the refrigerant liquid leaks from the heating and cooling plate 134, it will not leak into the B chamber. A water leakage sensor (not shown) is arranged around the heating and cooling plate 134. In addition, a groove is formed to discharge the refrigerant liquid to the outside of the testing device if the refrigerant leaks out. An electrostatic shield plate is disposed on the partition 214 so that noise generated from the transistor 117 does not cause the drive circuit system in the chamber B to malfunction.

[0182] The current passed through the transistor 117 under test is large, at several hundred amperes, and therefore the thickness of the connection wiring 211 used is also large, so that the connection wiring 211 does not have sliding properties and is hard, and it is not easy to change the connection of the connection wiring 211.

[0183] In the semiconductor device testing apparatus of the present invention, the switch circuit board 201 can be connected by the fork plug 205 inserted from the C2 chamber. Therefore, changing the connection with the switch circuit board 201 to be used depending on the test conditions of the transistor 117 does not require changing the wiring of the connection wiring 211, but only requires changing the position of the opening 216 into which the fork plug 205 is inserted. Also, the switch circuit board 201 only requires changing the position of the connector 213 connected to the mother board 207.

[0184] 9, 11, 29, 30, etc., the connection wiring 211b connected to the transistor 117 is connected to a fork plug 205c. The connection wiring 211a connected to the transistor 117 is connected to a fork plug 205e.

[0185] Even if there are a plurality of transistors 117 to be tested, a single switch circuit board 201a will suffice for the purpose, since it is sufficient to flow the output current Ia of the current power supply circuit 121a as Im to the ground line.

[0186] Switch circuit boards 201b are required in the number of transistors 117 to be tested. For example, if there are 12 transistors 117 to be tested, it is preferable to prepare 12 switch circuit boards 201b. It is also advantageous in terms of cost to make switch circuit boards 201a and switch circuit boards 201b the same specifications.

[0187] A plurality of transistors or the like are mounted on the switch circuit board 201 as the switch circuits 124. The greater the number of switch circuits 124, the smaller the impedance that shorts between the two conductive plates 204. The number of switch circuits 124b mounted on the switch circuit board 201a is determined so that the on-resistance of the switch circuit 124b is smaller than the on-resistance of the transistor 117 to be tested.

[0188] 27 and 28 show the state in which the fork plug 205 is inserted into the opening 216 of the partition wall 214. Fig. 27 is a view of the partition wall 214 as seen from the front side, and Fig. 28 is a view of the partition wall 214 as seen from the back side.

[0189] 27, fork plug 205b and multiple fork plugs 205c (fork plugs 205c1 to 205c5) are connected to conductive plate 204b. Fork plug 205e1 is connected to conductive plate 204d1, fork plug 205e2 is connected to conductive plate 204d2, fork plug 205e3 is connected to conductive plate 204d3, fork plug 205e4 is connected to conductive plate 204d4, and fork plug 205e5 is connected to conductive plate 204d5.

[0190] A transistor 117 to be tested is connected between the fork plug 205c and the fork plug 205e. The number of switch circuit boards 201b corresponding to the number of transistors 117 to be tested is mounted on the mother board 207. The openings 216 are formed in correspondence with the positions of the conductor plates 204 of the switch circuit boards 201.

[0191] Although not shown, a large amount of noise is generated by turning on and off the switch circuits 124 of the switch circuit boards 201. As a countermeasure against this, a metal plate is disposed between the switch circuit boards 201 and is earthed.

[0192] In each drawing, one switch circuit 124 is shown on switch circuit board 201. However, in reality, a plurality of switch circuits 124 are arranged between conductor plates 204. By arranging a plurality of switch circuits 124 on switch circuit board 201, it is possible to short-circuit between conductor plates 204 (for example, between conductor plate 204c and conductor plate 204e) with low resistance.

[0193] Heat generated by switch circuit 124 is dissipated to conductive plate 204. A heat sink is also attached to switch circuit 124. The ground terminal of switch circuit 124 is connected to the ground of switch circuit board 201, and heat is also dissipated via the copper foil of the ground.

[0194] As shown in Fig. 9, two conductive plates 204 are attached to a switch circuit board 201, and a switch circuit 124 is arranged so as to short-circuit the two conductive plates 204. Also, Fig. 29 is an equivalent circuit diagram of the semiconductor device testing apparatus of the present invention in the first embodiment.

[0195] As shown in Figures 9, 10, 11, etc., conductive plates 204a and 204b are attached to switch circuit board 201a. Conductive plate 204a is connected to fork plug 205a. Fork plug 205a is connected to an output terminal of current power supply circuit 121a. Conductive plate 204b is connected to fork plug 205b. Fork plug 205b is connected to a ground terminal of current power supply circuit 121a.

[0196] When the switch circuit 124b is turned on, the output terminals of the current power supply circuit 121a are short-circuited, and a short-circuit current Im flows. Therefore, the output current of the current power supply circuit 121a is not supplied to the transistor 117. When the switch circuit 124b is open, the output current Ia of the current power supply circuit 121a is supplied to the transistor 117.

[0197] Conductive plates 204c and 204d are attached to switch circuit board 201b. Conductive plate 204c is connected to fork plug 205d. Fork plug 205d is connected to the output terminal of current power supply circuit 121a. Conductive plate 204d is connected to fork plug 205e. Fork plug 205e is connected to the collector terminal of transistor 117 to be tested.

[0198] 9, 10, 27, 28, etc., fork plug 205e is inserted into opening 216 opened in partition wall 214 and coupled to conductive plate 204d. Also, fork plug 205c is inserted into opening 216 opened in partition wall 214 and coupled to conductive plate 204d.

[0199] A switch circuit 124a is disposed on the switch circuit board 201b, and when the switch circuit 124a is turned on, an output current Ia from the current power supply circuit 121a is supplied to the transistor 117 as a test current Id to be passed through the transistor 117.

[0200] The switch circuit board 201b is disposed in the B chamber of the housing 210, and the switch circuit board 201b is electrically connected to the transistor 117 to be tested by a fork plug 205 inserted from the C2 chamber through an opening 216 in the partition wall 214.

[0201] As shown in Figures 9, 10, 27, 28, etc., fork plug 205 and conductor plate 204 are connected. In Figure 10, switch circuit boards 201 are illustrated as being arranged in parallel. In reality, switch circuit boards 201 are inserted in parallel and arranged in a board rack. A mother board is arranged on the side of the board rack, and control signals to each circuit board are applied from the mother board. The method for testing a semiconductor device according to the present invention will be described below. Figures 29, 30 and 31 are explanatory diagrams of the method for testing a semiconductor device according to the first embodiment of the present invention.

[0202] A constant current circuit 118 supplies a constant current Ic to a diode Di of the transistor 117. An operational amplifier circuit 116 buffers and outputs a terminal voltage Vi of the diode Di. The terminal voltage Vi is applied to a temperature measurement circuit 115, which determines temperature information Tj of the transistor 117 from the terminal voltage Vi and transfers it to the controller 111. The temperature information is output from a connector 213 of the device control circuit board 209 to the mother board 207 and sent to the control circuit board 111 (see FIG. 26, etc.).

[0203] An on-voltage Vg that turns on the gate of the transistor 117 at a set frequency and for a set on-voltage time is output from the gate driver circuit 113. As an example, as shown in Fig. 31(a), the on-off cycle of the transistor 117 is tcycle, the on time is ton, and the off time is toff.

[0204] 31(a), the transistor 117 is controlled to be turned on and off. The gate driver circuit 113 is controlled by a gate signal control circuit 112. The current power supply circuit 121 a outputs a constant current Ia, which is supplied as Id to the transistor 117 .

[0205] The transistor 117 is turned on and off by the Vgs signal voltage output from the gate driver circuit 113, and a current Id flows between the channels of the transistor 117 while the transistor 117 is on.

[0206] The gate driver circuit 113 has an internal variable resistance circuit 125. The value of the variable resistance circuit 125 is configured so that it can be set to a predetermined value or in steps between 0 (Ω) and 500 (Ω). The value of the variable resistance circuit 125 may be set by a control signal from the control circuit board (controller) 111 while observing the waveform of the gate terminal g.

[0207] A resistor R (not shown) may be disposed between the gate terminal g and the emitter terminal e or collector terminal c of the transistor 117. By adjusting the value of the resistor R, the inclination angles of the rising and falling voltage waveforms of the gate signal can be adjusted.

[0208] When the value of the variable resistance circuit 125 is large, the slope of the rising / falling waveform of the gate signal of the transistor 117 applied to the gate terminal of the transistor 117 becomes gentler.

[0209] On the other hand, when the resistance value of the variable resistance circuit 125 is small, the slope of the rising / falling waveform of the gate signal becomes steeper. By changing the resistance value of the variable resistance circuit 125 or setting it to a predetermined value, the on-time of the transistor 117 can be adjusted.

[0210] The gate driver circuit 113 can set the slope of the rising waveform (rise time Tr) and the slope of the falling waveform (fall time Td) in the gate voltage applied to the gate terminal g of the transistor 117. By separately adjusting the rise time Tr and the fall time Td, the on time of the transistor 117 can be adjusted arbitrarily.

[0211] The resistance value of the variable resistance circuit 125 is set by the control circuit board (controller) 111. The setting is not limited to a constant value. The slope of the rising waveform (rise time Tr) and the slope of the falling waveform (fall time Td) of the gate driver circuit 113 may be changed. The resistance value at the rising edge and the resistance value at the falling edge of the gate signal may be changed. Also, the resistance value may be variably controlled in real time. By variably controlling the variable resistance circuit 125, the on-time of the transistor 117 is stabilized.

[0212] Reducing the resistance value at the rising edge of the gate signal makes the waveform of the on-voltage applied to the gate terminal of transistor 117 steeper, quickly turning on transistor 117. Reducing the resistance value at the rising edge of the gate signal makes the waveform of the on-voltage applied to the gate terminal of transistor 117 gentler, slowly turning on transistor 117.

[0213] Reducing the resistance value when the gate signal falls makes the waveform of the on-voltage applied to the gate terminal of transistor 117 steeper, quickly turning off transistor 117. Reducing the resistance value when the gate signal falls makes the waveform of the on-voltage applied to the gate terminal of transistor 117 gentler, and transistor 117 turns off more slowly.

[0214] As described above, it is possible to control, adjust, or set the value of the variable resistance circuit connected to the gate terminal of the transistor 117, or the rise time / fall time of the gate driver circuit 113. Therefore, as a function of the gate driver circuit 113, it is possible to change or modify the inrush current Is and surge voltage Vs generated in the transistor 117.

[0215] Needless to say, the operation of the transistor 117 can be controlled not only by controlling the on-voltage of the gate terminal of the transistor 117, but also by changing or setting the value of the constant current Id or voltage Vm supplied to the transistor 117 by the current power supply circuit 121.

[0216] The variable resistance circuit 125 of the gate driver circuit 113 is controlled by a control circuit board (controller) 111. The cycle time tcycle, on time ton, and off time toff of the gate signal output by the gate driver circuit 113 shown in FIG. 31 are controlled by a gate signal control circuit 112, and the gate signal is applied to the gate terminal of the transistor 117. In addition, the gate signal control circuit 112 is controlled by the control circuit board (controller) 111.

[0217] 11, 29, 30, etc., the resistance value of the variable resistance circuit 125 of the gate driver circuit 113 is variable, but this is not limited to this. For example, it goes without saying that the variable resistance circuit 125 may be an external resistor, and the resistor may be connected to the gate terminal of the transistor 117 by a connector (not shown) or the like. The value of the resistor to be connected is set by observing the waveform of the gate terminal of the transistor 117 and the waveform of the channel current Id.

[0218] 11, 29, 30, etc., a constant current circuit 118 is connected between a collector terminal c and an emitter terminal e of a transistor 117. The constant current circuit 118 passes a predetermined constant current Ic. The constant current Ic is for monitoring the temperature of the transistor 117.

[0219] In addition, since the present specification will be described taking an IGBT as an example, the terminals of the transistor 117 are a gate terminal g, a collector terminal c, and an emitter terminal e. In the case of a MOS transistor 117, the terminals of the transistor 117 are a gate terminal g, a drain terminal d, and a source terminal s.

[0220] A body diode or a channel diode Di is formed in the transistor 117. Note that the diode Di may be a diode of a separate semiconductor chip mounted on the semiconductor chip on which the transistor 117 is formed.

[0221] The diode Di may be a diode (parasitic diode) formed secondarily when the transistor 117 is formed. The parasitic diode is formed secondarily due to the layer structure of the transistor 117. The diode Di is formed near the channel portion of the transistor 117 due to its structure.

[0222] The diode Di may be any element that does not operate when the transistor 117 is operating. For example, it is not limited to a diode, and it goes without saying that a transistor may be used in diode connection.

[0223] In addition, the device is not limited to a semiconductor such as a diode, but may be a device such as a resistor. A constant current Ic is applied to a device such as a resistor to measure the terminal voltage of the resistor. This voltage is measured as voltage Vi.

[0224] As described above, the element for acquiring the temperature may be not only a semiconductor device, but also a resistor, etc. In other words, any device that can acquire a voltage value by passing a current or a current value by applying a voltage can be used.

[0225] The resistance value of diode Di changes due to heat generation by transistor 117. When a constant current Ic flows through diode Di, the voltage across the terminals of diode Di changes in proportion to the change in the resistance value of diode Di. By monitoring or measuring the voltage across the terminals, the temperature or temperature change of transistor 117 can be known. In order to monitor the temperature of the transistor 117 from the voltage of the diode Di, it is necessary to obtain the temperature coefficient in advance.

[0226] The temperature coefficient is measured by setting the transistor 117 at a predetermined temperature in a thermostatic chamber, passing a constant current Ic through the diode Di, and measuring the terminal voltage of the diode Di. The terminal voltage of the diode with respect to temperature can be obtained by varying the predetermined temperature and measuring the terminal voltage of the diode Di. Therefore, the temperature coefficient K of the transistor 117 can be obtained from the terminal voltage of the diode Di with respect to temperature.

[0227] The temperature coefficient K may differ for each production lot of the transistor 117, but generally it is a constant value for each production lot. Therefore, if the transistor 117 to be tested is sampled from each production lot and the temperature coefficient K is calculated, the temperature coefficient K can be used for the other transistors 117.

[0228] To obtain the temperature coefficient K with high accuracy, the temperature coefficient K of each transistor 117 is measured and tested individually, even for the same lot. Measurement of the temperature coefficient K is not limited to using a thermostatic bath. For example, the temperature coefficient K is obtained by changing the temperature of the water flowing through the heat sink on which the transistor 117 is mounted.

[0229] During testing, a test current Id is intermittently applied to the transistor 117. Immediately after the test current Id is turned off, or after a short, predetermined time has elapsed since the test current Id was turned off, a constant current Ic for temperature measurement is caused to flow from a constant current circuit 118.

[0230] In order to prevent the constant current Ic from heating the transistor 117 or to avoid any influence of the constant current Ic, the constant current Ic is set to a current value sufficiently smaller than the constant current Id passed through the channel of the transistor 117. The constant current Id is set to a current value that does not generate heat that would affect the temperature measurement.

[0231] Specifically, the constant current Ic is set to 1 / 1000 or less of the current Id passed through the transistor 117 during testing. Preferably, the current Ic passed through the transistor 117 is set to 1 / 106 or more and 1 / 104 or less of the current Id. The constant current Ic is set to 0.1 mA or more and 100 mA or less.

[0232] The channel current Id is changed, and the diode Di voltage (the voltage between the collector and emitter terminals of the transistor 117) is measured to obtain the temperature coefficient K. The obtained temperature coefficient K is stored in the temperature measurement circuit 115.

[0233] When measuring temperature, if the diode Di is formed on the same chip as the transistor 117, the saturation voltage Vn may change depending on the gate voltage Vgs. It is preferable that the gate voltage Vgs is zero (0) voltage or a negative voltage (minus voltage).

[0234] 8, based on the temperature information Tj, the control circuit board (controller) 111 controls the chiller 136. The chiller 136 adjusts the temperature of the circulating water (circulating solution), and adjusts the temperature of the heating and cooling plate .

[0235] In the above embodiment, the temperature coefficient K is calculated in advance, but the semiconductor testing method of the present invention is not limited to this. Temperature information Tj of the transistor 117 is calculated from the temperature coefficient and the diode terminal voltage, etc. The transistor 117 is disposed in close contact with the heating / cooling plate 134 , and the temperature of the heating / cooling plate 134 is configured to be approximately equal to that of the transistor 117 .

[0236] A control circuit board (controller) 111 controls a chiller 136 to set the temperature of the heating / cooling plate 134 to a predetermined temperature, applies a constant current Ic to a transistor 117, and measures the terminal voltage of a diode Di.

[0237] From the measurement results, the temperature coefficient K is obtained. The temperature of the heating / cooling plate 134 is set to a plurality of temperatures, the temperature coefficient K is obtained at each temperature, and the accuracy of the temperature coefficient value is improved from the results.

[0238] The temperature coefficient K is obtained by heating the transistor 117 to a predetermined temperature using the heating / cooling plate 134, passing a constant current Ic through the diode Di, and measuring the terminal voltage. The terminal voltage of the diode Di versus temperature can be obtained by varying the predetermined temperature and measuring the terminal voltage of the diode Di. Therefore, the temperature coefficient K of the transistor 117 can be obtained from the terminal voltage of the diode Di versus temperature.

[0239] When testing the transistor 117, the constant current Ic is caused to flow through the diode Di when the channel current Id is not flowing. In other words, when the transistor 117 is not turned on, the constant current Ic is caused to flow and the voltage across the diode Di is measured.

[0240] The operational amplifier circuit (buffer circuit) 116 outputs the terminal voltage Vi (terminal c-terminal e) of the diode Di. The operational amplifier circuit 116 is not limited to being composed of an operational amplifier element. Any circuit having high input impedance and low output impedance may be used. The temperature measurement circuit 115 obtains temperature information Tj of the transistor 117 being tested from the stored temperature coefficient K and voltage Vi.

[0241] The obtained temperature information Tj is sent to a control circuit board (controller) 111. When the temperature information Tj becomes equal to or exceeds a predetermined set value, the control circuit board (controller) 111 determines that the transistor 117 is in a predetermined stress state or deteriorated state, and changes the control of the test or stops the test.

[0242] In most cases, the parts of the transistor that deteriorate during testing are mainly the junctions within the transistor 117. The semiconductor itself does not deteriorate, but the junctions (bonding, die bonding, etc.) of the transistor 117 deteriorate, causing the resistance value of the junctions to increase. As the resistance value increases, the voltage Vce increases, generating heat and raising the temperature of the transistor 117.

[0243] When a semiconductor deteriorates, it is often the deterioration of the gate oxide film (insulating film) of the transistor 117. When the gate oxide film deteriorates, the oxide film (insulating film) is short-circuited and the voltage Vce drops. Alternatively, the transistor 117 is turned off, no current flows through the transistor 117, and the voltage Vce rises to the maximum value of the power supply voltage.

[0244] At the start of the test, the temperature information Tj varies between the minimum temperature T1 and the maximum temperature T2. When the transistor 117 is subjected to stress by the test, the Vce voltage of the transistor 117 varies, and the temperature information Tj usually varies in the increasing direction. Therefore, as shown in FIG. 32(c), the minimum temperature rises above temperature T1, and the maximum temperature approaches temperature information Tm (Tjmax). In the semiconductor testing method of the present invention, the test is terminated under any of the following conditions: When the temperature information Tj is outside the specified range. When the channel voltage Vce falls outside the specified voltage range. If the thermal resistance is outside the specified range.

[0245] In the embodiments of Fig. 11, Fig. 29, Fig. 30, etc., the switch circuit Ssa124a and the switch circuit Sab124b use the symbols for the switch circuits. Any element can be used as the switch circuit for the switch circuit Ssa124a and the switch circuit Sab124b as long as the resistance (on resistance) when closed (on) is small. Examples include a transistor, a mechanical relay, a phototransistor, a photodiode switch, etc.

[0246] Fig. 30 is an equivalent circuit diagram of a semiconductor device testing device in the first embodiment of the present invention. In this embodiment, the switch circuit Ssa and the switch circuit Sab use a power MOSFET 124 as shown in Fig. 30. The voltage (Vsd) between the channels of the power MOSFET is small.

[0247] It is to be noted that the switch circuits may be other than power MOSFETs. It goes without saying that the switch circuits Ssa and Sab may be power transistors or the like, in addition to power MOSFETs. Other examples include electromagnetic relays and electromagnetic switches.

[0248] The channel voltage (Vsdb) of the power MOSFET 124b when it is on is selected to be equal to or lower than the channel voltage (Vsda) of the power MOSFET 124a when it is on. In other words, the channel voltage (Vsdb) of the power MOSFET 124b when it is on is set to be smaller than the channel voltage (Vsda) of the power MOSFET 124a when it is on. This is to completely short-circuit the terminals of the current power supply circuit 121a when the switch circuit 124b is turned on, and to allow the current Im to flow stably. The above also applies when the switch circuit 124 is a power transistor, etc. In the case of the power transistor 124, the channel voltage is Vce. When the switch circuit 124a is turned on, the current Ia outputted from the current power supply circuit 121a can be supplied to the transistor 117 as the test current Id.

[0249] Fig. 31 is an explanatory diagram of a method for testing a semiconductor device of the present invention in the first embodiment. In Fig. 31, Vgs is a gate signal applied to the gate terminal of the transistor 117 to be tested. Id is a current passed through the transistor 117 during testing. For ease of explanation, it is assumed that a constant current Ia passes through the transistor 117 when it is on.

[0250] 31(c), St1 is a timing signal for causing a current Ic to flow through the diode Di, and when St1 is at H level, a current flows through the diode Di of the transistor 117. An operational amplifier circuit 116 acquires the terminal voltage of the diode Di, and a temperature measurement circuit 115 converts the terminal voltage into temperature information Tj. The temperature information Tj is sent to a control circuit board (controller) 111, and the control circuit board (controller) 111 tests the transistor 117 (semiconductor element 117) in accordance with the temperature information Tj.

[0251] Id is a current flowing through the transistor 117 to be tested, and is a current output from the current power supply circuit 121. St1 and St2 are the time for which a measurement current is passed through a diode for temperature measurement, or the time for which the temperature is measured. FIG. 31(e) Ssa is the on / off signal of the switch circuit 124a, and FIG. 31(f) Sab is the on / off signal of the switch circuit 124b.

[0252] 31(g), Vce indicates the voltage at the c terminal of the transistor 117 (the channel voltage of the transistor 117), and the temperature information Tj indicates the measured temperature change of the transistor 117.

[0253] 31(a), a gate signal Vgs is applied from the gate driver circuit 113 to the gate terminal g of the transistor 117. The gate signal Vgs has a cycle time tcycle and an on-time ton. The cycle time tcycle and the on-time ton can be set to any value by the gate signal control circuit 112. The on-voltage Vg can also be set to any voltage.

[0254] Fig. 31(d) St2 is a timing signal for causing a current Ic to flow through the diode Dsa and the diode Dsb in the embodiment shown in Fig. 34. When St2 is at H level, a current flows through the diode Dsa or Dsb of the transistor 117. This is the case where a constant current Ic is caused to flow through a device (diode) independent of the transistor 117 to acquire temperature information Tj.

[0255] An operational amplifier circuit 116 acquires the terminal voltage of the diode Dsa or Dsb, and a temperature measurement circuit 115 converts the terminal voltage into temperature information Tj. The temperature information Tj is sent to a control circuit board (controller) 111, which tests the transistor 117 based on the temperature information Tj. Note that matters related to St2 will be described with reference to FIG. 34 etc.

[0256] For ease of understanding, the measured temperature information Tj will be described as changing between T1 and T2 as shown in Fig. 31(h). The temperature information Tj increases when a current is applied to the transistor 117, and decreases when the current is stopped. The temperature information Tj also changes with the change in the characteristics of the transistor 117.

[0257] Figure 31(e) Ssa shows the timing of the on / off control signal for the switch circuit Ssa. When Ssa is Von, the switch circuit Ssa is closed (on). When Ssa is 0, the switch circuit Ssa is open (off), and the application of current or voltage is cut off.

[0258] Figure 31(f) Ssb shows the timing of the on / off control signal for the switch circuit Ssb. When Ssb becomes Von, the switch circuit Ssb is closed (on). When Ssb is 0, the switch circuit Ssb is open (off).

[0259] 31(g), Vce is the channel voltage (voltage between the emitter terminal and the collector terminal) of the transistor 117. As the transistor 117 is turned on and off, a surge voltage and a surge current are generated, and the Vce waveform changes in a complex manner over time as the on-resistance of the transistor 117 changes. In addition, the Vce waveform of the transistor 117 changes as a result of the current Ic flowing through the diode Di.

[0260] In this specification and drawings, for ease of explanation or for ease of drawing, it is assumed that when transistor 117 is on, the voltage is Vn, and when the transistor is off, the voltage is Ve. A gate signal is applied to the gate terminal of the transistor 117 under test with a period tcycle, an on time ton and an off time toff.

[0261] For the gate signal Vgs, if the transistor 117 is an N-channel transistor, the ground voltage 0 (V) is the off voltage and Vg is the on voltage. If the transistor 117 is a P-channel transistor, the on voltage potential and the off voltage potential are changed.

[0262] During a period tn2 before the transistor 117 is turned on, the Vt voltage is set to a voltage more negative than the off voltage, and during a period tn1 after the transistor 117 is turned off, the Vt voltage is set to a voltage more negative than the off voltage. The Vt voltage is a voltage lower than 0 (V) and higher than -4 (V). Therefore, Vt is a voltage equal to or higher than -4 (V) and lower than 0 (V).

[0263] In addition, when transistor 117 is SiC, the off-voltage is set to the Vt voltage, and when transistor 117 is an IGBT, the off-voltage is set to 0 (V). As described above, the semiconductor device testing apparatus of the present invention is configured so that the off-voltage supplied to transistor 117 can be changed according to the type of transistor 117 to be tested.

[0264] When the Vt voltage is applied, St1 (St2) is set to the H level to measure the temperature of the transistor 117. While the Vt voltage is being applied, a constant current Ic is caused to flow through the diode Di. In addition, while St1 (St2) is at the H level, the constant current Ic is also caused to flow.

[0265] By applying the Vt voltage to the gate terminal of the transistor 117, the off state of the transistor 117 becomes stable, and the temperature information Tj can be stably measured. In addition, noise is less likely to be introduced during measurement of the temperature information Tj, improving the measurement accuracy of the temperature information Tj.

[0266] By applying the Vt voltage to the gate terminal of the transistor 117, the leakage current of the transistor 117 is reduced, the measurement accuracy of the Vi voltage is improved, and the measurement is stabilized.

[0267] The gate signal Vgs is set to the voltage Vt during the times tn1 and tn2. As an example, the times tn1 and tn2 are from 0.2 ms to 2 ms. The transistor 117 is turned off at 0V.

[0268] Therefore, three voltages, Vg, 0 (V), and Vt, are applied to the gate terminal g of the transistor 117. During the period in which Vt is being applied, a current is caused to flow through the diode Di of the transistor, and temperature information Tj is measured.

[0269] When the constant current Ic is made to flow through the diode Di, the switch circuit Ssa is turned off so that the current from the current power supply circuit 121 a is not applied to the transistor 117 .

[0270] A terminal voltage of the diode Di is obtained by passing a constant current Ic through the diode Di, and an operational amplifier circuit 116 outputs a voltage Vi corresponding to the terminal voltage. The voltage Vi is input to a temperature measurement circuit 115, which obtains temperature information Tj corresponding to the temperature of a transistor 117.

[0271] The temperature information Tj is transferred to a control circuit board (controller) 111, which controls the test of the transistor 117 (semiconductor element 117) by continuing, stopping, changing conditions, etc. of the test of the transistor 117 based on the temperature information Tj.

[0272] Fig. 31(e) Ssa is a timing signal for controlling the on / off of the switch circuit 124a, and Fig. 31(f) Ssb is a timing signal for controlling the on / off of the switch circuit 124b.

[0273] The switch circuit 124a is turned on with a delay of tm2 from when the Vgs signal of the transistor 117 becomes Vg. The time tm2 can be changed and set by the control circuit board (controller) 111.

[0274] The switch circuit 124b turns on a time tb2 before the switch circuit 124a turns on. The on state of the switch circuit 124b is maintained until tb1 after the switch circuit 124a turns on. The times tb2 and tb1 can be changed independently. In particular, the setting of tb1 is important. The time tb1 is set or changed appropriately by observing the waveform of the Vce voltage of the transistor 117.

[0275] The switch circuit 124a is turned off a time tm1 before the Vgs signal of the transistor 117 reaches Vt. The time tm1 can be changed and set by the control circuit board (controller) 111.

[0276] Switch circuit 124b turns on a time ta2 before switch circuit 124a turns off. Switch circuit 124b remains on until ta1 after switch circuit 124a turns off. The ta2 and ta1 times can be changed independently. In particular, the setting of ta1 is important. The time ta1 is set or changed appropriately by observing or measuring the waveform of the Vce voltage of the transistor 117.

[0277] When the switch circuit Ssb is turned on, the output terminal of the current power supply circuit 121a is shorted to the ground (ground line), and the charge is discharged. As the charge is discharged, the terminal voltage of the current power supply circuit 121a becomes 0 (V) (ground voltage). In addition, the current Ia output by the current power supply circuit 121a is caused to flow to the ground as a current Im. Therefore, the current Ia is not applied to the transistor 117, and the collector voltage of the transistor 117 does not rise.

[0278] The time tb2 is set by observing or measuring the time when the output voltage of the current power supply circuit 121a becomes 0 (V) or close to 0 (V), or the time when the output voltage of the current power supply circuit 121a becomes lower than the collector voltage of the transistor 117.

[0279] At the time when the voltage relationship reaches a predetermined value (after tb2), the switch circuit 124a is turned on to apply the current Ia (=Id) from the current power supply circuit 121a. However, since the switch circuit 124b is on at this time, the current Ia (=Id) from the current power supply circuit 121a flows to the ground (ground line) as the current Im via the switch circuit 124b. Therefore, the constant current Id does not flow through the transistor 117. After the switch circuit 124 a is turned on and a time tb1 has elapsed, the switch circuit 124 b is turned off and the test current Id is supplied to the transistor 117 . The test current Id is supplied to the transistor 117 in synchronization with the switch circuit 124a as shown in FIG.

[0280] By operating the switch circuits 124a and 124b as described above, the surge voltage Vs or the inrush current Is is not applied to the transistor 117. Alternatively, the surge voltage Vs or the inrush current Is is suppressed, and the transistor 117 can be properly tested.

[0281] When the test current Id to the transistor 117 is stopped, the switch circuit 124b is turned on before the switch circuit 124a is turned off (ta2). The constant current Ia output by the current power supply circuit 121a flows to the ground as the current Im via the switch circuit Ssb and is not supplied to the transistor 117.

[0282] The time ta2 is set by observing the time when the output voltage of the current power supply circuit 121a becomes 0 (V) or close to 0 (V), or the time when the output voltage of the current power supply circuit 121a becomes lower than the collector voltage of the transistor 117.

[0283] When the above voltage relationship reaches a predetermined value (after ta2 has elapsed), the switch circuit 124a is turned off. After ta1 has elapsed since the switch circuit 124a was turned off, the switch circuit 124b is turned off.

[0284] By operating or controlling the switch circuits 124a and 124b as described above, the surge voltage Vs or inrush current Is is not applied to the transistor 117. Alternatively, the surge voltage Vs or inrush current Is is suppressed, and the transistor 117 can be properly tested.

[0285] When the constant current Id is supplied to the transistor 117, the temperature information Tj increases. When the constant current Id to the transistor 117 is stopped, the temperature information Tj decreases. The temperature information Tj fluctuates between T1 and T2. When the characteristics of the transistor 117 fluctuate due to the test, the temperature information Tj gradually increases. In order to apply a constant current Id to the transistor 117, the current power supply circuit 121a is operated to apply a current Id (=Ia) to the transistor 117.

[0286] 11, 29, 30, 32, 34, 35, etc., the resistance value of the variable resistance circuit 125 of the gate driver circuit 113 can also be set. By increasing the resistance value, the rising / falling waveform of the gate signal Vgs can be changed as shown by the dotted line or the dashed-dotted line in FIG. 32(a).

[0287] By changing or setting the gate signal Vgs, the current Id flowing through the transistor 117 can also be changed as shown by the dotted line or the dashed dotted line in FIG. 32(b). By changing the rising and falling waveforms of the current Id, it is possible to adjust or suppress the surge voltage or inrush current.

[0288] As shown in Fig. 32(c), the temperature information Tj changes from a solid line to a dotted line and from a dotted line to a dashed line as the characteristics of the transistor 117 change due to the test. The test is stopped when the temperature information Tj reaches the level of Tm. Alternatively, the test is stopped when the rate of change of the temperature information Tj reaches a predetermined value. In addition, the test conditions are changed.

[0289] 33, when the switch circuit Ssa (switch circuit 124a) is in the off state, the St1 signal is set to H and temperature information Tj is measured. The St1 signal is set to H level when the gate signal is Vt. In the tn2 period, the signal is set to H level for a period tc2 and temperature information Tj is measured. In the tn1 period, temperature information Tj is measured for a period tc1.

[0290] The temperature information Tj measured during the period tc2 is the temperature information Tj at the time when the transistor 117 is cooled. The temperature information Tj measured during the period tc1 is the temperature information Tj immediately after the current Id to the transistor 117 is stopped. Stopping the test, changing the conditions, changing the control, etc. are determined based on the temperature information Tj measured during the period tc2 and the temperature information Tj measured during the period tc1.

[0291] If the rate of change of the temperature information Tj measured during the tc1 period is larger than that of the temperature information Tj measured during the tc2 period, or if the difference in absolute value between the temperature information Tj measured during the tc1 period and the temperature information Tj measured during the tc2 period is large, the test is controlled and changed in response to the measurement value temperature information Tj.

[0292] Moreover, if the temperature information Tj measured during the period tc2 differs from the standard value by a predetermined value, it is determined whether there is a problem with the connection state of the transistor 117 or the test equipment, and a decision is made to "not start the test", etc. During the period tc2 or tc1, Vi is measured multiple times, and temperature information Tj for Vi is obtained.

[0293] The embodiment of Fig. 34 is a semiconductor device testing apparatus according to the second embodiment of the present invention. A transistor 117 in Fig. 34 is provided with a diode Ds (diode Dsa, diode Dsb) for temperature measurement. The diode Ds is formed in the same process as the transistor 117.

[0294] In the embodiment of FIG. 34, temperature information Tj is measured at the timing of the St2 signal in FIG. 31(d). When the switch circuit Ssa (switch circuit 124a) is in the off state, the St2 signal is set to H and temperature information Tj is measured. In the tn2 period, the signal is set to H level during the tc2 period and temperature information Tj is measured. During the tc1 period, temperature information Tj may be measured during either the ton period or the tn1 period. The temperature information Tj measured during the tc2 period and the temperature information Tj measured during the tc1 period are averaged to obtain the temperature information Tj.

[0295] During the period tc2 or tc1, Vi is measured multiple times to obtain temperature information Tj for Vi. The operations of other signals or switch circuits in Fig. 31 are the same as or similar to those in the embodiment described with reference to Fig. 11 and so on. In the above embodiment, the temperature information Tj is measured by a diode added to or formed in the transistor 117. In the embodiment of FIG. 34, a diode Ds that is not connected (independent) to the transistor 117 is formed.

[0296] The diode Dsa is oriented so as to pass the constant current Ic. The diode Dsb is oriented so as to pass the constant current Ic'. The constant current circuit 118 (Pc) generates the constant current Ic and the constant current Ic'.

[0297] The diodes Dsa and Dsb are diodes for measuring temperature. The structures of the diodes Dsa and Dsb are similar or identical to the diode Di in FIG.

[0298] Diode Di is connected to the terminals (terminals c and e) of transistor 117, while diodes Dsa and Dsb are not connected to the terminals of transistor 117 but are connected to independent terminals, and temperature information Tj of diode Di is measured at timing St1 in Figure 31(c), while temperature information Tj of diode Dsa and diode Dsb is measured at timing St2 in Figure 31(d). Except for this, they have the same operation or configuration.

[0299] In the embodiment of Fig. 34, the diode Ds is separated from the path through which the constant current Id flows. Even when the current Id flows through the transistor 117, the constant current Ic can be made to flow through the diode. Therefore, the time for measuring the temperature information Tj can be freely set. The positions of tc1 and tc2 can be set as shown in Fig. 31(d).

[0300] However, in tc2, as shown in Fig. 31(d), the gate signal is placed or set in the period of Vt. The temperature information Tj measured in the period tc2 is used as the value before the transistor 117 operates. The period tc1 is preferably immediately before the constant current Id of the transistor 117 is stopped. However, it may be immediately after the constant current Id is stopped. It is preferable that "immediately before" and "immediately after" are within 1 ms. St2 in FIG. 31(d) is a timing signal for causing the current Ic (or current Ic') to flow through the diode Ds (Dsa, Dsb).

[0301] When St2 is at H level, a current flows through the diode Ds (Dsa, Dsb) of the transistor 117. The operational amplifier circuit 116 acquires the terminal voltage of the diode Ds, and the temperature measurement circuit 115 converts the terminal voltage into temperature information Tj.

[0302] The temperature information Tj is sent to a control circuit board (controller) 111, which performs or stops the test of the transistor 117 or changes the control in accordance with the temperature information Tj.

[0303] When St2 is at H level, the constant current circuit 118 supplies a constant current Ic, which flows through the diode Dsa, and the constant current circuit 118 supplies a constant current Ic', which flows through the diode Dsb.

[0304] The constant current Ic and the constant current Ic' are currents of the same magnitude. However, when the threshold voltages of the diodes Dsa and Dsb are different, or when the characteristics of the diodes Dsa and Dsb are different, it is preferable to make the constant current Ic and the constant current Ic' different in magnitude.

[0305] An operational amplifier circuit 116 acquires a terminal voltage of the diode Dsa or Dsb, and a temperature measurement circuit 115 converts the terminal voltage into temperature information Tj. The temperature information Tj is sent to a control circuit board (controller) 111, which then tests a transistor 117 based on the temperature information Tj.

[0306] The temperature information Tj obtained by passing a constant current Ic and the temperature information Tj obtained by passing a constant current Ic' are averaged or weighted to obtain a single value of temperature information Tj. Using this temperature information Tj, the control circuit board (controller) 111 performs or stops the test of the transistor 117, or changes the control. The other matters are the same as or similar to the matters or contents described in this specification and drawings, and therefore will not be described here.

[0307] It goes without saying that the present invention can be modified in various ways without departing from the spirit and scope of the present invention. It goes without saying that the matters or contents described in this specification and drawings can be combined with each other.

[0308] Fig. 35 is an explanatory diagram of a semiconductor device testing apparatus according to a third embodiment of the present invention. The difference from Fig. 11 is that a diode-connected transistor 117s is arranged in the path of a current Id to be passed through a transistor 117m to be tested. Other points are the same, so the explanation will be omitted.

[0309] As an example, the transistor 117s is a transistor having the same specifications as the transistor 117m to be tested. The gate terminal g2 and the emitter terminal e2 of the transistor 117s are connected, and the transistor 117s can be considered equivalent to a diode. The gate terminal g2 and the emitter terminal e2 of the transistor 117s are connected to the O terminal of the element terminal 226. The collector terminal c2 of the transistor 117s is connected to the P terminal of the element terminal 226.

[0310] 7, the terminals (gate terminal g2, emitter terminal e2, collector terminal c2) of the transistor 117s are connected to the connector 202b, and the connector 202b is connected to the sample connection circuit 203 by a signal wiring 222b. The terminals (gate terminal g2, emitter terminal e2, collector terminal c2) of the transistor 117s are connected in the sample connection circuit 203.

[0311] When the switch circuit 124b is turned on, a current Im flows, and the charge of the current power supply circuit 121a is discharged. Alternatively, the current Ia output by the current power supply circuit 121a flows to the ground via the switch circuit 124b.

[0312] When an inrush current Is flows through the transistor 117m to be tested, the transistor 117m is destroyed by the inrush current Is or the surge voltage Vs. To prevent the inrush current Is or the surge voltage Vs from occurring, the on / off control and the on / off sequence of the switch circuits 124a and 124b are controlled.

[0313] When the cycle tcycle is made faster to test the transistor 117m, it is necessary to turn on and off the switch circuits 124a and 124b at high speed. In this case, an inrush current Is or a surge voltage Vs may occur depending on the on / off timing of the switch circuit 124.

[0314] If the voltage Vm at the collector terminal of the transistor 117 is higher than the voltage Vp at the output of the current power supply device, the current flows toward ground as the current Im, and little or no current flows through the transistor 117m.

[0315] In order to establish the relationship Vm > Vp, in the embodiment shown in Fig. 35, a diode-connected transistor 117s is placed in the path of the current Id. When a current flows through the transistor 117s, the voltage Vm is built up by the channel voltage of the transistor 117s. Therefore, the voltage Vp is lower than the voltage Vm, and no inrush current is applied to the transistor 117m. The transistor 117m will not be destroyed by the inrush current Is or the surge voltage Vs.

[0316] 36 is an explanatory diagram of a semiconductor device testing apparatus in the fourth embodiment of the present invention. In Fig. 36, a plurality of transistors 117 (transistors 117Q1 to 117Qn) to be tested are connected in parallel to a current power supply circuit 121.

[0317] The fourth embodiment includes one switch circuit board 201a and n switch circuit boards 201b (switch circuit boards 201b1 to 201bn). The number of transistors 117Q to be tested simultaneously or sequentially is n (transistors 117Q1 to 117Qn).

[0318] The collector terminal of the transistor Q1 is connected to the fork plug 205e1, and the emitter terminal of the transistor Q1 is connected to the fork plug 205c1.

[0319] The collector terminal of the transistor Q2 is connected to the fork plug 205e2, and the emitter terminal of the transistor Q2 is connected to the fork plug 205c2.

[0320] The collector terminal of the transistor Q3 is connected to the fork plug 205e3, and the emitter terminal of the transistor Q3 is connected to the fork plug 205c3.

[0321] Similarly, the collector terminal of the transistor Qn is connected to the fork plug 205en, and the emitter terminal of the transistor Qn is connected to the fork plug 205cn.

[0322] When the switch circuit Ssa1 is turned on, the current Ic of the constant current circuit 118 is supplied to the diode Ds of the transistor 117Q1. The terminal voltage of the diode Ds is applied to the operational amplifier (buffer) 116 and is output from the operational amplifier circuit 116 as the Vi1 voltage.

[0323] When the switch circuit Ssa2 is turned on, the current Ic of the constant current circuit 118 is supplied to the diode Ds of the transistor 117Q2. The terminal voltage of the diode Ds is applied to the operational amplifier (buffer) 116 and is output from the operational amplifier circuit 116 as the voltage Vi2.

[0324] Similarly, when the switch circuit Ssan is turned on, the current Ic of the constant current circuit 118 is supplied to the diode Ds of the transistor 117Qn. The terminal voltage of the diode Ds is applied to the operational amplifier (buffer) 116 and is output from the operational amplifier circuit 116 as the Vin voltage. One voltage is selected from voltages Vi 1 to Vin by selector 127 , and is output as Vi and input to temperature measurement circuit 115 .

[0325] The temperature measuring circuit 115 obtains temperature information Tj and outputs it to the control circuit board 111. In the embodiment of Fig. 36, one constant current circuit 118 is used, but this is not limited to this. A constant current circuit 118 may be provided for each transistor 117Q. Also, a temperature measuring circuit 115 may be formed or provided for each transistor 117Q. The voltage data Vi and the temperature information Tj are sent to the control circuit board 111 via the wiring of the mother board 207 .

[0326] The element terminal 226 (P terminal) of the transistor 117Q1 is connected to the connection structure 218a1, and the element terminal 226 (N terminal) of the transistor 117Q1 is connected to the connection structure 218b1.

[0327] The element terminal 226 (P terminal) of the transistor 117Q2 is connected to the connection structure 218a2, and the element terminal 226 (N terminal) of the transistor 117Q2 is connected to the connection structure 218b2.

[0328] Similarly, the element terminal 226 (P terminal) of the transistor 117Qn is connected to the connection structure 218an, and the element terminal 226 (N terminal) of the transistor 117Qn is connected to the connection structure 218bn, where n is a positive number equal to or greater than 1. The connection structure 218 is inserted from an opening 216 provided in the partition wall 217. The connection structure 218 is inserted in the direction from the C2 chamber to the C1 chamber.

[0329] The fork plug 205 is inserted into the B chamber from the C2 chamber side through an opening 216 formed in the partition wall 214. When the fork plug 205 is inserted, it is connected to the conductor plate 204 of the switch circuit board 201. The switch circuit board 201 can be selected depending on the position of the opening 216 into which the fork plug 205 is inserted.

[0330] By changing the position of the switch circuit board 201 connected to the connector 213 of the mother board 207, the switch circuit board 201 to be selected by the fork plug 205 can be selected.

[0331] Two conductive plates 204 are arranged on the switch circuit board 201. Of the two conductive plates 204, the conductive plate 204 closer to the C2 chamber and the fork plug 205 are arranged so as to be connected (in contact).

[0332] In the embodiment of the present invention, the fork plug 205 and the conductive plate 204 are electrically connected by contacting each other, but this is not limited to this. Any structure may be used as long as it can change between an electrically connected state and a non-connected state by a mechanical operation. Also, any structure may be used as long as it can stably maintain the connected state.

[0333] For example, a rotary connector, a rotary joint, a high-current connector, etc. may be used instead of the fork plug 205. A rotary connector, a rotary joint, a high-current connector, a cylindrical conductor rod, a rectangular conductor rod, a comb-shaped conductor plate, etc. may be used instead of the conductor plate 204.

[0334] Although the present specification and drawings will be described as conductor plate 204, it is not limited to a plate, and may be rod-shaped. Any shape may be used as long as it can be joined to a structure such as fork plug 205. For example, it may be a structure such as a socket or connector. Furthermore, conductor plate 204 may be in the shape of a fork plug, and fork plug 205 may be connected to the fork plug.

[0335] Fig. 37 is an explanatory diagram of a method for testing a semiconductor device in an embodiment of the present invention, explaining the operation of Fig. 36. It is possible to perform a semiconductor test by simultaneously turning on transistors 117Q (transistors 117Q1 to 117Qn). In this case, it is necessary to pass a constant current Id through all of transistors 117Q (transistors 117Q1 to 117Qn). Therefore, if there are n transistors 117Q, the current power supply circuit 121a must be able to output a current of Id x n (n is a positive number equal to or greater than 1). Therefore, a large-capacity current power supply circuit 121a is required.

[0336] If the test is performed by sequentially turning on the transistors 117Q and applying a constant current Id to the transistors 117Q, the constant current output by the current power supply circuit 121a can be Id. Fig. 37 shows an embodiment of a test method for a semiconductor element tester that performs a test by sequentially turning on the transistors 117Q. The semiconductor element changes depending on the number of times the constant current Id is turned on and off.

[0337] Therefore, by performing a test by sequentially turning on the semiconductor elements (transistor 117Q, etc.) as shown in FIG. 37, the test can be performed efficiently and the maximum output current capacity of the current power supply circuit 121a can be reduced.

[0338] 37, the number of transistors 117Q to be turned on is described as one, but this is not limited to this. For example, multiple transistors 117Q may be turned on at the same time. In this case, the maximum value of the constant current output by the current power supply circuit 121a is the number of transistors 117Q to be turned on × Id.

[0339] In addition, in the embodiment of the present invention, one current power supply circuit 121a is illustrated, but the present invention is not limited to this. The current power supply circuit 121a may be provided with a current power supply circuit 121b separately. Furthermore, two or more current power supply circuits 121 may be provided. By providing a plurality of current power supply circuits 121, the current Id flowing through the transistor 117 can have various waveforms. The above also applies to the embodiments of the present invention.

[0340] As shown in Fig. 37(a), when switch circuit St1 (151s1) to switch circuit Stn (151sn) are turned on, constant currents Id1 to Idn flow through transistor 117. For example, the application time of constant current Id is ton, and constant currents Id1 and Id2 are applied to transistor 117 sequentially at an interval of time tcycle. When transistor 117 is turned on, the channel voltage of transistor 117Q changes sequentially (Fig. 37(c)).

[0341] Therefore, for example, the constant current Id1 and the constant current Id2 do not overlap in time, and therefore the output capacitance of the current power supply circuit 121 may be the output capacitance required for testing one transistor 117Q.

[0342] The constant currents Id (Id1 to Idn) are controlled so as not to overlap each other. It is preferable that the constant currents Id (Id1 to Idn) are separated by an interval of 1 μsec or more. The driving method and control method described in FIG. 31 are performed on each transistor 117Q.

[0343] The constant current Ic to be supplied to each transistor 117Q is supplied to the diode Ds of each transistor 117Q by sequentially turning on the switch circuits Ssa (Ssa1 to Ssan).

[0344] A voltage Vi (Vi1 to Vin) corresponding to the terminal voltage of diode Ds is selected by the selector 127 in synchronization with the switch circuit Ssa (Ssa1 to Ssan). For example, when a current Ic is supplied to the transistor 117Q1, the selector 127 selects the terminal voltage of the diode Ds of the transistor 117Q1. When a current Ic is supplied to the transistor 117Q3, the selector 127 selects the terminal voltage of the diode Ds of the transistor 117Q3. The selected voltage Vi is supplied to the temperature measurement circuit 115. The other configurations and operations are similar to those described in the other embodiments, and therefore the description thereof will be omitted. In the embodiment of the present invention, the transistor 117 is illustrated as an IGBT, but the present invention is not limited to this.

[0345] For example, it goes without saying that it may be an N-channel JFET (Figure 38(a)), a P-channel JFET (Figure 38(b)), an N-channel MOSFET (Figure 38(c)), a P-channel MOSFET (Figure 38(d)), an N-channel bipolar FET (Figure 38(e)), or a P-channel bipolar FET (Figure 38(f)).

[0346] Furthermore, the device is not limited to a three-terminal device, and may be a two-terminal element such as a diode shown in Fig. 38(g). A two-terminal element does not require a gate signal Vgs. It goes without saying that the semiconductor element testing apparatus and semiconductor element testing method of the present invention can be applied by testing by passing a constant current Id from the current power supply circuit 121.

[0347] Furthermore, it goes without saying that the semiconductor element testing apparatus and semiconductor element testing method of the present invention are not limited to transistors and diodes, but can also be applied to other semiconductor elements such as thyristors and triacs, varistors, diacs, or modules in which transistors, diode resistors, etc. are mixed or integrated.

[0348] In the above, the present specification has specifically described the present invention based on the embodiment, but it goes without saying that the present invention is not limited thereto, and various modifications are possible without departing from the spirit of the present invention. It goes without saying that the matters or contents described in this specification and the drawings can be combined with each other.

[0349] For example, the switch circuits 124a and 124b shown in Fig. 30 can be applied to the other embodiments. For example, it goes without saying that the configurations or operations of Fig. 36 and Fig. 37 can be applied to the other embodiments of Fig. 34, Fig. 35, etc. [Industrial Applicability]

[0350] The present invention can provide a semiconductor element testing apparatus and a semiconductor testing method that can easily change connections depending on the test contents of semiconductor elements such as transistors and the number of semiconductor elements to be tested simultaneously, and can effectively implement measures against noise generated during testing. [Explanation of symbols]

[0351] 111 Control circuit board (controller) 112 Gate signal control circuit 113 Gate driver circuit 115 Temperature measurement circuit 116 Operational Amplifier (Buffer Amplifier) 117 Power Transistor 118 Constant current circuit 121 Current power circuit 122 Switch Circuit 124 Switch Circuit 125 Variable Resistor Circuit 126 Variable Resistor Circuit 127 Selector 128 Current Detection Circuit 129 Voltage detection circuit 130 Constant current setting circuit 131 Control Rack 132 Power supply 133 Control circuit 134 Heating and cooling plate 135 Circulating Water Pipe 136 Chiller 137 Short Circuit 138 Isolated DC / DC converter circuit 201 Switch circuit board 202 Connector 203 Sample connection circuit 204 Conductor plate 205 Fork plug 206 connection pins 207 Motherboard 208 Connector 209 Device control circuit board 210 Cabinet 211 Connection wiring 212 Power wiring 213 Connector 214 Bulkhead 215 Bulkhead 216 Opening 218 Connection Structure 219 Connection bolt 220 Contact part 221 Fixing screw 222 Signal wiring 223 Heat Pipe 224 Fixing screw 225 Contact part 226 Element terminal 227 Cooling Fan 228 Heat dissipation fin 231 Heat pipe fittings 232 Connection fittings 233 Connection fitting part 234 Recess 236 Spring (pressure fitting) 237 Position fixing screw 238 Screw hole 239 Spring hole 240 Positioning screw hole 241 Fork plug insert plate 251 Convex 252 Groove 301 Test Circuit Module 302 Voltage selection circuit 311 Pressing tool 312 Insulating plate 313 Pressing tool mounting plate 315 Insulation 322 Heating / cooling device 323 Support stand 324 Electrical element insertion hole 325 Slide groove

Claims

1. A power cycle test apparatus for testing a power transistor having a signal terminal and an element terminal, the power transistor being disposed on a heating / cooling plate to which a first circulating water pipe for introducing a liquid and a second circulating water pipe for discharging the liquid are attached, the power cycle test apparatus comprising: A support stand; A connection structure for connecting to the element terminal; A connection wiring connected to the connection structure; A signal wiring connected to the signal terminal; A gate driver circuit connected to the signal wiring; a terminal voltage measuring circuit connected to the signal terminal or the element terminal; a power supply for supplying a test current or a test voltage; a first switch circuit that supplies the test current or test voltage to an element terminal of the power transistor via the connection structure; the connection structure is disposed on the support base, and the element terminal and the connection structure are connected to each other; the gate driver circuit applies a signal voltage to the signal wiring to turn on or off the power transistor; the terminal voltage measurement circuit measures a terminal voltage between the signal terminal or element terminal of the power transistor when the test current is not supplied to the power transistor; the heating / cooling plate and the power transistor are disposed in a first chamber; The power cycle testing apparatus according to claim 1, wherein the first switch circuit is disposed in a second chamber.

2. A power cycle test apparatus for testing a power transistor having a signal terminal and an element terminal, the power transistor being disposed on a heating / cooling plate to which a first circulating water pipe for introducing a liquid and a second circulating water pipe for discharging the liquid are attached, the power cycle test apparatus comprising: A support stand; A connection structure for connecting to the element terminal; A connection wiring connected to the connection structure; A signal wiring connected to the signal terminal; A gate driver circuit connected to the signal wiring; a terminal voltage measuring circuit connected to the signal terminal or the element terminal; a constant current circuit connected to the signal terminal or the element terminal; a power supply for supplying a test current or a test voltage; a first switch circuit that supplies the test current or test voltage to an element terminal of the power transistor via the connection structure; a second switch circuit for shorting output terminals of the power supply device; the connection structure is disposed on the support base, and the element terminal and the connection structure are connected to each other; the gate driver circuit applies a signal voltage to the signal wiring to turn on or off the power transistor; the constant current circuit supplies a constant current to the signal terminal or the element terminal; the terminal voltage measurement circuit measures a voltage between the signal terminal or the element terminal to which the constant current is supplied when the test current is not supplied to the power transistor; the heating / cooling plate and the power transistor are disposed in a first chamber; The power cycle testing apparatus according to claim 1, wherein the first switch circuit and the second switch circuit are disposed in a second chamber.

3. 3. A power cycle testing device according to claim 1, wherein a recess is formed in the connection structure, and a heat pipe is in intimate contact with the recess.

4. Further comprising a cooling fan, 3. The power cycle testing device according to claim 1, wherein the cooling fan is disposed on a side surface or a bottom surface of the connection structure.

5. The connection structure has a connection part or a pressing tool and a connection fitting part, The element terminal is sandwiched between the connection part or the pressing tool and the connection metal part, and connected; 3. The power cycle testing device according to claim 1, wherein the surface of the connection portion or the pressing tool is roughened.

6. Further comprising a water leakage sensor for detecting the leaked liquid, A channel is formed for drainage of the leaked liquid, 3. The power cycle testing device according to claim 1, wherein the operation of the power cycle testing device is stopped or an alarm is issued in response to the operation of the water leakage sensor.

7. 3. The power cycle testing device according to claim 1, wherein the element terminal is arranged on a first end face of the power transistor, and the signal terminal is arranged on a second end face facing the first end face.

8. the first switch circuit is mounted on a switch circuit board to which a first conductor plate and a second conductor plate are attached; 3. The power cycle testing device according to claim 1, wherein the first switch circuit shorts the first conductive plate and the second conductive plate when the first switch circuit is turned on.

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