Electronic device and chip packaging method

Abstract

To provide, in a field of chip packaging, an electronic device and a chip packaging method.SOLUTION: The electronic device includes a housing. A substrate is arranged in the housing. A first crystal device and an adapter board are arranged in parallel on a side surface of the substrate. A first ground pad is arranged on a surface of the adapter board facing the substrate, and the adapter board is electrically connected to the substrate by the first ground pad, so that the adapter board is grounded. A first part of a first plastic packaging layer is arranged on a surface of the first crystal device, and a second part of the first plastic packaging layer is arranged between the adapter board and the substrate. The first part and the second part are integrally formed. A first shielding metal covers a surface of the first part and is electrically connected to the first ground pad, so that the first shielding metal is grounded.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] cross reference This application claims priority to Chinese Patent Application No. 202110968469.4, entitled "Electronic Device and Chip Packaging Method," filed with the China Patent Office on August 23, 2021, the entire contents of which are incorporated herein by reference.

[0002] The present application relates to the field of chip packaging, and in particular to electronic devices and chip packaging methods. [Background technology]

[0003] Electronic devices have been constantly developed toward miniaturization. At present, smart watches, smart bracelets, wireless headsets, etc., with relatively small volumes have appeared. As the volume of electronic devices gradually decreases and the functions gradually become more diverse, the number of components required to realize the functions also gradually increases, and the component density of electronic devices also gradually increases. Therefore, higher requirements are imposed on the packaging process of electronic devices.

[0004] For example, for an electronic device with Bluetooth, WiFi, or other data transmission functions, referring to FIG. 1, a wireless headset and a mobile phone are paired and connected using the Bluetooth function. In order to realize Bluetooth, WiFi, or other data transmission, an antenna is provided in the electronic device, and the antenna and other components are packaged together in the same packaging structure. However, in the operation process of the electronic device, the antenna generates electromagnetic waves, and in a narrow space, the antenna may cause electromagnetic interference to other components, reducing the operation performance of the other components. In such a long-term operating state, the device is easily damaged, and the electronic device may be damaged. Summary of the Invention [Means for solving the problem]

[0005] The embodiments of the present application provide an electronic device and chip packaging method to ensure the shielding effect between devices and avoid the mutual influence between devices.

[0006] To achieve the aforementioned objectives, the embodiments of the present application provide the following technical solutions:

[0007] In a first aspect, an embodiment of the present application provides an electronic device including a housing; a substrate disposed within the housing; a first crystal device and an adapter substrate disposed in parallel on a side surface of the substrate, the adapter substrate including a first ground pad, the first ground pad being disposed on a surface of the adapter substrate facing the substrate, the adapter substrate being electrically connected to the substrate by the first ground pad, such that the adapter substrate is grounded; a first plastic packaging layer, a first portion of the first plastic packaging layer being disposed on a surface of the first crystal device, a second portion of the first plastic packaging layer being disposed between the adapter substrate and the substrate, the first portion and the second portion being integrally formed; and a first shield metal covering a surface of the first portion and electrically connected to the first ground pad, such that the first shield metal is grounded.

[0008] From the above technical solution, it can be seen that the first part is disposed outside the first crystal device, and in order to realize the shielding between the first crystal device and the adapter substrate, the first part is grounded to isolate the first crystal device from the adapter substrate, thereby forming a closed Faraday cage. In realizing the shielding, there is no need to expand the layout space, and the shielding effect is large.

[0009] In one implementation, the adapter substrate further includes an interconnect via, one end of which is connected to the first ground pad and the other end of which extends through the surface of the adapter substrate facing away from the substrate. The first shield metal extends from the surface of the first portion to the surface of the adapter substrate facing away from the substrate and is connected to the interconnect via, so that the first shield metal is connected to the first ground pad through the interconnect via. In this way, the first shield metal can be grounded by covering the interconnect via, realizing the grounding of the first shield metal without the need for additional components. Therefore, the process is simple and the integration is high.

[0010] In one implementation, the adapter substrate further includes an interconnect via and a second ground pad. The second ground pad is disposed on a surface of the adapter substrate facing away from the substrate, and two ends of the interconnect via are connected to the first ground pad and the second ground pad, respectively. The first shield metal extends from the surface of the first portion to the surface of the adapter substrate facing away from the substrate and is connected to the second ground pad, such that the first shield metal is connected to the first ground pad by the second ground pad and the interconnect via. In this manner, the first shield metal can be grounded by the second ground pad, the interconnect via, and the first ground pad.

[0011] In one implementation, the second shield metal includes a first shield segment and a second shield segment. The first shield segment is disposed on a side surface of the adapter substrate facing the first crystal device, and an end of the first shield segment away from the substrate is connected to the first shield metal. The second shield segment is disposed on a surface of the adapter substrate facing the substrate, and one end of the second shield segment is connected to the first shield segment, and the other end of the second shield segment is connected to the first ground pad. In this way, the first shield metal can be connected to the first ground pad by the second shield segment and the first shield segment, thereby realizing grounding.

[0012] In one implementation, the second shield metal further includes a third shield segment disposed on a surface of the adapter substrate facing away from the substrate, one end of the third shield segment connected to the first shield segment, and the other end of the third shield segment extending a distance toward the second ground pad, the third shield segment connected to the first shield metal.

[0013] In one implementation, a third ground pad is disposed at the location where the first shield metal contacts the substrate. The first shield metal is connected to the third ground pad, so that the first shield metal is grounded. In this manner, the end of the first shield metal away from the adapter substrate can be grounded.

[0014] In one implementation, the adapter substrates are distributed around the edge of the substrate.

[0015] In one implementation, the electronic device further includes a second crystal device disposed on the other surface of the substrate, a second plastic packaging layer disposed on the surface of the second crystal device, a third shield metal covering the surface of the second plastic packaging layer and the side surface of the substrate, and a ground metal layer disposed inside the substrate, extending from the inside of the substrate to the side surface of the substrate, and connected to the third shield metal. This can realize double-sided mounting of the substrate. In addition, the first crystal device and the adapter substrate on one side surface of the substrate can be shielded from each other, and the second crystal device on the other side surface of the substrate can also be isolated from the outside, thereby avoiding leakage of electromagnetic signals.

[0016] In one implementation, the third shield metal further covers a side surface of the second portion facing away from the first crystal device and further covers a side surface of the adapter substrate facing away from the first crystal device.

[0017] In one implementation, the first crystal device includes one or more of a NOR flash memory, a MOS transistor, a SoC chip, a decoding circuit, a charging chip, an RLC device, a crystal, a Bluetooth chip, a radio frequency chip, a WiFi chip, an NFC chip, or a sensor.

[0018] In one implementation, the second crystal device includes one or more of a NOR flash memory, a MOS transistor, a SoC chip, a decoding circuit, a charging chip, an RLC device, a crystal, a Bluetooth chip, a radio frequency chip, a WiFi chip, an NFC chip, or a sensor.

[0019] In one implementation, the first shield metal, the second shield metal, and the third shield metal are formed by spraying or sputtering.

[0020] In a second aspect, an embodiment of the present application includes the steps of placing a substrate in a housing; bonding or soldering a first crystal device to a side surface of the substrate; creating a first ground pad on an adapter substrate; and soldering the adapter substrate to a side surface of the substrate using the first ground pad, where the first ground pad is located on a substrate-facing surface of the adapter substrate, the first crystal device and the adapter substrate are arranged in parallel, and the adapter substrate is electrically connected to the substrate by the first ground pad, such that the adapter substrate is grounded; and bonding or soldering the first crystal device to form a first portion. coating a molding compound between the adapter substrate and the substrate to form a second part, the first part and the second part forming a first plastic packaging layer, the first part and the second part being integrally formed; and metallizing the surface of the first part after the first part is cured to form a first shielding metal, the first shielding metal being electrically connected to a first ground pad, such that the first shielding metal is grounded.

[0021] From the above technical solution, it can be seen that the first part is disposed outside the first crystal device, and in order to realize the shielding between the first crystal device and the adapter substrate, the first part is grounded to isolate the first crystal device from the adapter substrate, thereby forming a closed Faraday cage. In realizing the shielding, there is no need to expand the layout space, and the shielding effect is large.

[0022] In one implementation, an interconnect via is fabricated on the adapter substrate, one end of the interconnect via is connected to the first ground pad, and the other end of the interconnect via extends through the surface of the adapter substrate facing away from the substrate. A first shield metal extends from the surface of the first portion to the surface of the adapter substrate facing away from the substrate and is connected to the interconnect via, so that the first shield metal is connected to the first ground pad through the interconnect via. In this way, the first shield metal can be grounded by covering the interconnect via, realizing the grounding of the first shield metal without the need for additional components. Therefore, the process is simple and the integration is high.

[0023] In one implementation, an interconnect via and a second ground pad are fabricated on the adapter substrate. The second ground pad is disposed on a surface of the adapter substrate facing away from the substrate, and two ends of the interconnect via are connected to the first ground pad and the second ground pad, respectively. A first shield metal extends from a surface of the first portion to a surface of the adapter substrate facing away from the substrate and is connected to the second ground pad, so that the first shield metal is connected to the first ground pad through the second ground pad and the interconnect via. In this way, the first shield metal can be grounded by the second ground pad, the interconnect via, and the first ground pad.

[0024] In one implementation, the side surface of the adapter substrate facing the first crystal device is covered with metal to form a first shield segment. The end of the first shield segment away from the substrate is connected to the first shield metal. The surface of the adapter substrate facing the substrate is covered with metal to form a second shield segment. One end of the second shield segment is connected to the first shield segment, and the other end of the second shield segment is connected to the first ground pad. The first shield segment and the second shield segment form a second shield metal. In this way, the first shield metal can be connected to the first ground pad by the second shield segment and the first shield segment, thereby realizing grounding.

[0025] In one implementation, a surface of the adapter substrate facing away from the substrate is covered with metal to form a third shield segment. One end of the third shield segment is connected to the first shield segment, and the other end of the third shield segment extends a distance toward a second ground pad, where the third shield segment is connected to the first shield metal. The first shield segment, the second shield segment, and the third shield segment form a second shield metal.

[0026] In one implementation, a third ground pad is fabricated at the location where the first shield metal contacts the substrate. The first shield metal is connected to the third ground pad, so that the first shield metal is grounded. In this way, the end of the first shield metal away from the adapter substrate can be grounded.

[0027] In one implementation, the adapter board is soldered to a side surface of the substrate using a first ground pad, and the adapter board is distributed over the edge of the substrate.

[0028] In one implementation, the second crystal device is soldered or bonded to the other surface of the substrate. A molding compound is coated on the surface of the second crystal device to form a second plastic packaging layer. After the second plastic packaging layer is cured, the surface of the second plastic packaging layer and the side surface of the substrate are covered with metal to form a third shield metal. A ground metal layer is made inside the substrate, extends from the inside of the substrate to the side surface of the substrate, and connects to the third shield metal. This can realize double-sided mounting of the substrate. Also, the first crystal device and the adapter substrate on one side surface of the substrate can be shielded from each other, and the second crystal device on the other side surface of the substrate can also be isolated from the outside, thereby avoiding leakage of electromagnetic signals.

[0029] In one implementation, a side surface of the second portion facing away from the first crystal device and a side surface of the adapter substrate facing away from the first crystal device are covered with metal to form a third shield metal.

[0030] In one implementation, the first crystal device includes one or more of a NOR flash memory, a MOS transistor, a SoC chip, a decoding circuit, a charging chip, an RLC device, a crystal, a Bluetooth chip, a radio frequency chip, a WiFi chip, an NFC chip, or a sensor.

[0031] In one implementation, the second crystal device includes one or more of a NOR flash memory, a MOS transistor, a SoC chip, a decoding circuit, a charging chip, an RLC device, a crystal, a Bluetooth chip, a radio frequency chip, a WiFi chip, an NFC chip, or a sensor.

[0032] In one implementation, the first shield metal, the second shield metal, and the third shield metal are formed by spraying or sputtering. [Brief description of the drawings]

[0033] [Figure 1]1 is a schematic diagram of a connection between a wireless headset and a mobile phone. [Diagram 2] 1 is a schematic diagram of a current electronic device. [Diagram 3] FIG. 1 is a first schematic structural diagram of an electronic device according to an embodiment of the present application; [Figure 4] FIG. 2 is a schematic diagram of a first Faraday cage of an electronic device according to an embodiment of the present application. [Diagram 5] FIG. 2 is a second schematic structural diagram of an electronic device according to an embodiment of the present application. [Figure 6] FIG. 2 is a schematic diagram of a second Faraday cage of an electronic device according to an embodiment of the present application. [Figure 7] FIG. 3 is a third schematic structural diagram of an electronic device according to an embodiment of the present application. [Figure 8] FIG. 2 is a schematic diagram of a third Faraday cage of an electronic device according to an embodiment of the present application. [Figure 9] FIG. 4 is a fourth schematic structural diagram of an electronic device according to an embodiment of the present application. [Figure 10] FIG. 13 is a schematic diagram of a fourth Faraday cage of an electronic device according to an embodiment of the present application. [Figure 11] FIG. 2 is a schematic diagram of packaging of peripheral components according to an embodiment of the present application. [Figure 12] FIG. 5 is a fifth schematic structural diagram of an electronic device according to an embodiment of the present application. [Figure 13] FIG. 13 is a schematic diagram of a fifth Faraday cage of an electronic device according to an embodiment of the present application. [Figure 14] FIG. 2 is a schematic diagram of a grounded first shield metal according to an embodiment of the present application. [Figure 15] FIG. 1 is a schematic structural diagram of a TWS headset according to an embodiment of the present application. [Figure 16] 1 is a schematic flow chart of a chip packaging method according to an embodiment of the present application. [Figure 17] FIG. 2 is an exploded view of a chip packaging method according to an embodiment of the present application. [Figure 18]FIG. 13 is an exploded view of another first shield metal packaging according to an embodiment of the present application. [Figure 19] FIG. 13 is an exploded view of another first shield metal packaging according to an embodiment of the present application. [Figure 20] FIG. 13 is an exploded view of another first shield metal packaging according to an embodiment of the present application. [Figure 21] 4 is a schematic flow chart of another chip packaging method according to an embodiment of the present application. [Figure 22] FIG. 2 is an exploded view of another chip packaging method according to an embodiment of the present application. [Diagram 23] FIG. 2 is a schematic structural diagram of a housing of an electronic device according to an embodiment of the present application. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0034] In order to facilitate understanding of the technical solutions of the embodiments of the present application, some technical terms in the technical field to which the embodiments of the present application belong will first be briefly introduced before specific implementation forms of the embodiments of the present application are described.

[0035] Reflow soldering involves heating air or nitrogen to a sufficiently high temperature and then blowing the heated air or nitrogen onto a circuit board on which a component is mounted, causing the solder on both sides of the component to melt and bond to the circuit board.

[0036] A true wireless stereo (TWS) headset, i.e. a fully wireless headset, can be connected to a device such as a mobile phone by Bluetooth. A TWS headset can process Bluetooth signals so that the left and right channels are wirelessly separated, and the left and right headsets can be used separately, which has characteristics such as low latency, fast connection by Bluetooth, fast transmission speed, and low energy consumption.

[0037] Electronic devices have been constantly developed toward miniaturization. At present, smart watches, smart bracelets, wireless headsets, etc., with relatively small volumes have appeared. As the volume of electronic devices gradually decreases and the functions gradually become more diverse, the number of components required to realize the functions also gradually increases, and the component density of electronic devices also gradually increases. Therefore, higher requirements are imposed on the packaging process of electronic devices.

[0038] For example, for an electronic device with Bluetooth, WiFi, or other data transmission functions, referring to FIG. 1, a wireless headset and a mobile phone are paired and connected using the Bluetooth function. In order to realize Bluetooth, WiFi, or other data transmission, an antenna is provided in the electronic device, and the antenna and other components are packaged together in the same packaging structure. However, in the operation process of the electronic device, the antenna generates electromagnetic waves, and in a narrow space, the antenna may cause electromagnetic interference to other components, reducing the operation performance of the other components. In such a long-term operating state, the device is easily damaged, and the electronic device may be damaged.

[0039] Please refer to FIG. 2, which is a schematic diagram of a current electronic device.

[0040] As shown in Fig. 2, the electronic device may include a substrate 01, an adapter substrate 02 soldered to a side surface of the substrate 01, and a first component 03. The adapter substrate 02 is a circuit board that can transmit signals and generate electromagnetic waves during operation. Since the adapter substrate 02 and the first component 03 are arranged in parallel on the side surface of the substrate 01, the electromagnetic waves generated by the adapter substrate 02 during operation directly cause electromagnetic interference to the first component 03.

[0041] To solve the above problems, an embodiment of the present application provides an electronic device.

[0042] Referring to Fig. 3, Fig. 3 is a first schematic structural diagram of an electronic device according to an embodiment of the present application. Referring to Fig. 23, Fig. 23 is a schematic structural diagram of a housing of an electronic device according to an embodiment of the present application. From Fig. 3 and Fig. 23, it can be seen that the electronic device may include a housing 13, a substrate 1, a first crystal device 2, an adapter substrate 3, a first plastic packaging layer 4, and a first shield metal 6. The first crystal device 2 and the adapter substrate 3 are arranged parallel to the side surface of the substrate 1.

[0043] In a specific implementation, the substrate 1 is disposed inside the housing 13. A ground layer is disposed inside the substrate 1 so that components electrically connected to the substrate 1 can be grounded. The first crystal device 2 may be fixed to the substrate 1 by soldering or bonding.

[0044] The adapter substrate 3 may include a first ground pad 31. The first ground pad 31 is disposed on a surface of the adapter substrate 3 facing the substrate 1, and the adapter substrate 3 may be electrically connected to the substrate 1 by the first ground pad 31, such that the adapter substrate 3 is grounded.

[0045] In some implementations, the way in which the adapter substrate 3 is packaged on the substrate 1 may be ball grid array (BGA) packaging. The BGA solder balls may be formed between the first ground pads 31 and the substrate 1, with the first ground pads 31 providing locations to which the BGA solder balls are attached. In this manner, the adapter substrate 3 can be packaged on the substrate 1 and electrically connected with the substrate 1 by the first ground pads 31 and the BGA solder balls.

[0046] The first plastic packaging layer 4 may include a first part 41 and a second part 42. The first part 41 may be disposed on the surface of the first crystal device 2, and the second part 42 may be disposed between the adapter substrate 3 and the substrate 1. The first part 41 can encapsulate the first crystal device 2, and the second part 42 can be filled between the adapter substrate 3 and the substrate 1, which can achieve the functions of insulation, heat dissipation, and dust prevention. It can also prevent the first crystal device 2 and the adapter substrate 3 from being displaced or damaged when subjected to external force.

[0047] The first portion 41 and the second portion 42 may be formed from a molding compound and formed by a molding tool.

[0048] It should be understood that the division into the first portion 41 and the second portion 42 is not a division in a physical sense, but is merely for convenience of explanation, i.e., the first portion 41 and the second portion 42 are formed integrally.

[0049] The first shield metal 6 may cover the surface of the first portion 41, and the first shield metal 6 is electrically connected to the first ground pad 31, so that the first shield metal 6 is grounded. The first shield metal 6 may be fabricated and formed on the surface of the first portion 41 by spraying or sputtering, and the thickness of the first shield metal 6 may be designed according to the actual situation.

[0050] 3, it can be seen that a closed space can be formed after the first shield metal 6 is grounded by the first ground pad 31. This space can isolate the first crystal device 2, so that the first crystal device 2 can be shielded from the adapter substrate 3, and the first crystal device 2 and the adapter substrate 3 do not interfere with each other.

[0051] In one implementation form, the electronic device provided in the embodiment of the present application may further include a third ground pad 8. The third ground pad 8 is disposed at a position where the first shield metal 6 contacts the substrate 1. The first shield metal 6 is connected to the third ground pad 8, so that the first shield metal 6 is grounded by the substrate 1. The third ground pad 8 may be prefabricated on the substrate 1.

[0052] 3 shows in more detail how the first shield metal 6 is grounded. From FIG. 3, it can be seen that the adapter substrate 3 includes an interconnect via 32. One end of the interconnect via 32 is connected to the first ground pad 31, and the other end of the interconnect via extends through the surface of the adapter substrate 3 facing away from the substrate 1. The first shield metal 6 extends from the surface of the first portion 41 to the surface of the adapter substrate 3 facing away from the substrate 1 and is connected to the interconnect via 32, so that the first shield metal 6 is connected to the first ground pad 31 through the interconnect via 32.

[0053] The interconnect via 32 can play the role of electrical connection. After the first shield metal 6 covers one side surface of the interconnect via 32, the first shield metal can be electrically connected to the first ground pad 31 on the other side surface of the interconnect via 32 through the interconnect via 32. In this way, the substrate ground layer, the first shield metal 6, the interconnect via 32, the first ground pad 31, and the BGA solder ball form a quasi-closed space, that is, a "Faraday cage" is formed. Referring to FIG. 4, FIG. 4 is a schematic diagram of a first Faraday cage of an electronic device according to an embodiment of the present application. The part shown in the dashed box in FIG. 4 can be regarded as a "Faraday cage". The "Faraday cage" can play the role of shielding, which can ensure that the first crystal device 2 in the Faraday cage is protected from the electromagnetic interference of the adapter substrate 3, and can also protect the first crystal device 2 from the electromagnetic interference of the external environment. Also, the adapter substrate 3 outside the "Faraday cage" can be protected from the interference by the first crystal device 2.

[0054] The hole size of the interconnection vias 32 can be designed according to practical requirements, which is not particularly limited in this application.

[0055] When fabricating the first shield metal 6 on the surface of the adapter substrate 3 facing away from the substrate 1, the first shield metal 6 only covers the interconnect vias 32, so that in order to avoid the influence of the spray or sputtering process on other components of the adapter substrate 3, the locations on the adapter substrate 3 other than the interconnect vias 32 can be covered with a shielding film to play the role of a shield.

[0056] Referring to Figure 5, Figure 5 is a second schematic structural diagram of an electronic device according to an embodiment of the present application. From Figure 5, it can be seen that the grounding method of the first shield metal 6 can be further realized by the following components:

[0057] The adapter substrate 3 further includes a second ground pad 33. The second ground pad 33 is disposed on a surface of the adapter substrate 3 facing away from the substrate 1, and both ends of the interconnect via 32 are connected to the first ground pad 31 and the second ground pad 33, respectively. The first shield metal 6 extends from the surface of the first portion 41 to the surface of the adapter substrate facing away from the substrate 1 and is connected to the second ground pad 33, such that the first shield metal 6 is connected to the first ground pad 31 by the second ground pad 33 and the interconnect via 32.

[0058] In this way, the substrate ground layer, the first shield metal 6, the second ground pad 33, the interconnect via 32, the first ground pad 31, and the BGA solder balls form a quasi-closed space, i.e., a "Faraday cage". Referring to FIG. 6, FIG. 6 is a schematic diagram of a second Faraday cage of an electronic device according to an embodiment of the present application. The portion shown in the dashed box in FIG. 6 can be considered as the "Faraday cage". The effect that the "Faraday cage" can achieve has already been described, and a detailed description is omitted.

[0059] When fabricating the first shield metal 6 on the surface of the adapter substrate 3 facing away from the substrate 1, the first shield metal 6 only covers the second ground pad 33, so that in order to avoid the influence of the spray or sputtering process on other components of the adapter substrate 3, the positions of the adapter substrate 3 except the second ground pad 33 can be covered with a shielding film to play the role of a shield.

[0060] 7, which is a third schematic structural diagram of an electronic device according to an embodiment of the present application. To realize the grounding of the first shielding metal 6, a second shielding metal 7 may be further disposed on the outside of the adapter substrate 3 by spraying or sputtering.

[0061] The second shield metal 7 may include a first shield segment 71 and a second shield segment 72. The first shield segment 71 is disposed on a side surface of the adapter substrate 3 facing the first crystal device 2, and an end of the first shield segment 71 remote from the substrate 1 is connected to the first shield metal 6. One end of the second shield segment 72 is connected to the first shield segment 71, and the other end of the second shield segment is connected to the first ground pad 31.

[0062] The first shield metal 6 may be connected to the first shield segment 71 and then connected to the first ground pad 31 by the first shield segment 71 and the second shield segment 72, thereby achieving grounding.

[0063] In this way, the substrate ground layer, the first shield metal 6, the first shield segment 71, the second shield segment 72, the first ground pad 31, and the BGA solder balls form a quasi-closed space, i.e., a "Faraday cage". Referring to FIG. 8, FIG. 8 is a schematic diagram of a third Faraday cage of an electronic device according to an embodiment of the present application. The portion shown in the dashed box in FIG. 8 can be considered as the "Faraday cage". The effect that the "Faraday cage" can achieve has already been described, and a detailed description will be omitted.

[0064] When fabricating the first shield metal 6 on the surface of the adapter substrate 3 facing away from the substrate 1, the first shield metal 6 only covers the first shield segment 71, so that in order to avoid the influence of the spray or sputtering process on other components of the adapter substrate 3, the surface of the adapter substrate 3 facing away from the substrate 1 can be covered with a shielding film to play the role of a shield.

[0065] Referring to Fig. 9, Fig. 9 is a fourth schematic structural diagram of an electronic device according to an embodiment of the present application. From Fig. 9, it can be seen that, in order to realize the grounding of the first shielding metal 6, a second shielding metal 7 may be further disposed on the outside of the adapter substrate 3 by spraying or sputtering. In addition to the first shielding segment 71 and the second shielding segment 72, the second shielding metal 7 further includes a third shielding segment 73.

[0066] The first shield segment 71 is disposed on the side surface of the adapter substrate 3 facing the first crystal device 2, and an end of the first shield segment 71 remote from the substrate 1 is connected to the first shield metal 6. One end of the second shield segment 72 is connected to the first shield segment 71, and the other end of the second shield segment is connected to the first ground pad 31. The third shield segment 73 is disposed on the surface of the adapter substrate 3 facing away from the substrate 1. One end of the third shield segment 73 is connected to the first shield segment 71, and the other end of the third shield segment extends a certain distance in a direction facing away from the first crystal device 2.

[0067] It can be seen from FIG. 9 that when the third shield segment 73 extends towards the second ground pad 33 , the third shield segment 73 is not in contact with the second ground pad 33 .

[0068] The first shield metal 6 may extend in a direction facing away from the first crystal device 2 so as to completely cover the third shield segment 73 .

[0069] After the first shield metal 6 contacts the third shield segment 73, it is connected to the first ground pad 31 by the third shield segment 71, the first shield segment 73 and the second shield segment 72, thereby achieving grounding.

[0070] In this way, the substrate ground layer, the first shield metal 6, the third shield segment 73, the first shield segment 71, the second shield segment 72, the first ground pad 31, and the BGA solder balls form a quasi-closed space, i.e., a "Faraday cage". Referring to FIG. 10, FIG. 10 is a schematic diagram of a fourth Faraday cage of an electronic device according to an embodiment of the present application. The portion shown in the dashed box in FIG. 10 can be considered as a "Faraday cage". The effect that the "Faraday cage" can achieve has already been described, and a detailed description will be omitted.

[0071] When fabricating the first shield metal 6 on the surface of the adapter substrate 3 facing away from the substrate 1, the first shield metal 6 only covers the third shield segment 73, so in order to avoid the influence of the spraying or sputtering process on other components of the adapter substrate 3, a shield film may be placed on the surface of the adapter substrate 3 facing away from the substrate 1, ensuring that the shield film does not cover the third shield segment 73 and playing the role of a shield.

[0072] In some implementations, the adapter substrate 3 made of the second shield metal 7 may also include a first ground pad 31, an interconnect via 32, a second ground pad 33, etc. The first ground pad 31 may be electrically connected to the substrate 1 by a BGA solder ball, and the surface of the second ground pad 33 may be tinned. The second ground pad 33 may be connected to other external devices by soldering, so that the other external devices are connected to the first ground pad 31 by the second ground pad 33 and the interconnect via 32. The number of the first ground pad 31, the interconnect via 32, and the second ground pad 33 included in the adapter substrate 3 may also be planned according to the actual requirements, and the adapter substrate is not limited to including only one first ground pad 31, one interconnect via 32, and one second ground pad 33.

[0073] In the embodiment of the present application, the first crystal device 2 may be packaged on the substrate 1 by soldering or bonding. For example, referring to FIG. 9, the first crystal device 2a is packaged on the substrate 1 by bonding and electrically connected to the substrate 1 by wire bonding, so that the first crystal device 2b is directly soldered to the substrate 1. It is understood that in addition to the packaging method shown in FIG. 9, other achievable packaging methods can be further adopted for the first crystal device 2, which is not limited in the embodiment of the present application.

[0074] In some implementations, the electronic device provided in the embodiment of the present application further includes peripheral components. Referring to FIG. 11, FIG. 11 is a schematic diagram of packaging of peripheral components according to an embodiment of the present application. FIG. 11(a) shows the peripheral components of the electronic device of FIG. 3, FIG. 11(b) shows the peripheral components of the electronic device of FIG. 5, FIG. 11(c) shows the peripheral components of the electronic device of FIG. 7, and FIG. 11(d) shows the peripheral components of the electronic device of FIG. 9. The peripheral components may be disposed on a side surface of the substrate 1, specifically, on the side of the first shield metal 6 away from the first crystal device 2, and may be packaged by welding or bonding. The peripheral components may be gravity sensors or other devices that are not susceptible to electromagnetic signal interference.

[0075] In some implementations, the electronic device provided in the embodiments of the present application may include one or more adapter substrates 3, and the multiple adapter substrates 3 may be arranged along the edge of the substrate 1. The number and specific arrangement positions of the adapter substrates 3 may be designed according to the actual situation, which is not particularly limited in the present application.

[0076] Referring to Fig. 12, Fig. 12 is a fifth schematic structural diagram of an electronic device according to an embodiment of the present application. From Fig. 12, it can be seen that the adapter substrates 3 provided in the embodiment of the present application are distributed on the edge of the substrate 1. Since Fig. 12 is a schematic diagram of an electronic device sliced ​​up and down, in Fig. 12, multiple adapter substrates 3 are distributed on both sides of the first crystal device 2.

[0077] It will be understood that the package form of the first crystal device 2 shown in Figure 12 is merely an example and does not constitute a specific limitation on the package form of the first crystal device 2. For example, the first crystal device 2c can be electrically connected to the substrate 1 by BGA solder balls, and the first crystal device 2d can then be directly soldered to the substrate 1.

[0078] Referring to FIG. 13, FIG. 13 is a schematic diagram of a fifth Faraday cage of an electronic device according to an embodiment of the present application. The portion indicated by the dashed box in FIG. 13 can be regarded as a "Faraday cage". From FIG. 13, it can be seen that when the number of adapter boards 3 is two, both ends of the first shield metal 6 are connected to the first ground pad 31 by the third shield segment 73, the first shield segment 71, and the second shield segment 72, thereby realizing grounding. In this case, the board ground layer, the first shield metal 6, the two third shield segments 73, the two first shield segments 71, the two first ground pads 31, and the BGA solder balls form a quasi-closed space, i.e., a "Faraday cage".

[0079] In some implementations, when multiple adapter boards 3 are arranged, the grounding scheme of the first shield metal 6 may be a matching scheme by the third shield segment 73, the first shield segment 71, and the second shield segment 72, as well as a matching scheme by the interconnection vias 32, etc. For details, refer to FIG. 14, and the details will not be repeated here.

[0080] In electronic devices with a relatively large number of components, it is common to stack and package the components on the premise of ensuring miniaturization. The electronic device provided in the embodiment of the present application is used as an example. The components may be disposed on either one side of the substrate 1 or the other side of the substrate 1. Therefore, the shielding properties of the components on the other side of the substrate 1 should also be guaranteed when packaging.

[0081] Further referring to FIG. 12, the electronic device provided in the embodiment of the present application further includes a second crystal device 9 , a second plastic packaging layer 10 , a third shield metal 11 , and a ground metal layer 12 .

[0082] A second crystal device 9 is disposed on the other side of the substrate 1 and a second plastic packaging layer 10 is disposed on the surface of the second crystal device 9 .

[0083] In a specific implementation, the second crystal device 9 may be packaged on the substrate 1 by soldering or bonding.

[0084] The second plastic packaging layer 10 can encapsulate the second crystal device 9 to achieve the functions of insulation, heat dissipation and dustproofing, and can prevent the second crystal device 9 from being displaced or damaged when subjected to external force. The second plastic packaging layer 10 can be formed of a molding compound and molded by a molding jig.

[0085] A third shield metal 11 covers the surface of the second plastic packaging layer 10 and the side surface of the substrate 1. A ground metal layer 12 is located inside the substrate 1, extends from the inside of the substrate 1 to the side surface of the substrate 1, and is connected to the third shield metal 11.

[0086] In a specific implementation, the third shielding metal 11 may be fabricated and formed on the surface of the second plastic packaging layer 10 and the side surface of the substrate 1 by spraying or sputtering, and the thickness of the third shielding metal 11 may be designed according to actual circumstances.

[0087] After the third shielding metal 11 covers the surface of the second plastic packaging layer 10 and the side surface of the substrate 1 and completely encapsulates the second crystal device 9, the second crystal device 9 is insulated from other devices. The third shielding metal 11 may be grounded through a grounding metal layer 12 extending from the inside of the substrate 1 to achieve a shielding effect for the second crystal device 9, to avoid mutual interference between the second crystal device 9 and other devices, to avoid electromagnetic interference of the second crystal device 9 from the external environment, and to prevent the second crystal device 9 from interfering with the outside.

[0088] The third shield metal 11 may further cover a side surface of the second portion 42 facing away from the first crystal device 2, and may further cover a surface of the adapter substrate 3 facing away from the first crystal device 2.

[0089] From FIG. 12, it can be seen that in order to isolate the substrate 1 and the second crystal device 9 from the outside, a complete shielding layer is formed by covering the third shielding metal 11, and as a result, the shielding effect is more pronounced.

[0090] Once double-sided mounting is completed, the first crystal device 2 and the adapter substrate 3 on one side of the substrate 1 can be shielded, and the second crystal device 9 on the other surface of the substrate 1 can also be isolated from the outside.

[0091] In some implementations, the first crystal device 2 may include one or more of a NOR flash memory (NOR flash), a MOS transistor, an SoC chip, a decoding circuit (codec IC), a charging chip (charger), an RLC (resistor, inductor, capacitor) device, a crystal, a Bluetooth chip, a radio frequency chip, a WiFi chip, an NFC chip, or a sensor. The second crystal device 9 may include one or more of a NOR flash memory (NOR flash), a MOS transistor, an SoC chip, a decoding circuit (codec IC), a charging chip (charger), an RLC device, a crystal, a Bluetooth chip, a radio frequency chip, a WiFi chip, an NFC chip, or a sensor. The first crystal device 2 and the second crystal device 9 may be other types of chips, which are not particularly limited in this application.

[0092] 12, in some implementations, the electronic device provided in the embodiments of the present application further includes a solder resist layer 5. The solder resist layer 5 covers the surface of the adapter substrate 3 facing away from the substrate 1. During operations such as soldering the adapter substrate 3 to the substrate 1 using a reflow soldering technique and tinning the second ground pad 33 of the adapter substrate 3, it can be ensured that the position where the solder resist layer 5 is located is not covered by tin solder.

[0093] In some implementations, the electronic device provided in the embodiment of the present application may be a TWS headset. Referring to FIG. 15, FIG. 15 is a schematic structural diagram of a TWS headset according to an embodiment of the present application. From FIG. 15, it can be seen that the TWS headset package can include a substrate 1, a first crystal device 2 arranged in parallel on a side surface of the substrate 1, and an adapter substrate 3. When packaging, the number of adapter substrates 3 included in the TWS headset may be one. The adapter substrate 3 has a first ground pad 31. The first ground pad 31 is arranged on the surface of the adapter substrate 3 facing the substrate 1, and the adapter substrate 3 is electrically connected to the substrate 1 by the first ground pad 31, so that the adapter substrate 3 is grounded. Specifically, the adapter substrate 3 may be packaged on the substrate 1 using BGA solder balls. The adapter substrate 3 may further include an interconnect via 32 and a second ground pad 32. The second ground pad 32 may be tin-plated. The first part 41 is disposed on the surface of the first crystal device 2, and the second part 42 is disposed between the adapter substrate 3 and the first ground pad 31. The first part 41 and the second part 42 are integrally formed to form the first plastic packaging layer 4. The TWS headset further includes a second shield metal 7. The second shield metal 7 includes a first shield segment 71, a second shield segment 72, and a third shield segment 73. The first shield segment 71 is disposed on the side surface of the adapter substrate 3 facing the first crystal device 2, and the end of the first shield segment 71 away from the substrate 1 is connected to the first shield metal 6. One end of the second shield segment 72 is connected to the first shield segment 71, and the other end of the second shield segment is connected to the first ground pad 31. The third shield segment 73 is disposed on the surface of the adapter substrate 3 facing away from the substrate 1. One end of the third shield segment 73 is connected to the first shield segment 71, and the other end of the third shield segment extends a certain distance in a direction facing away from the first crystal device 2. The third shield segment 73 is connected to the first shield metal 6.A third ground pad 8 is further disposed on the substrate 1. The third ground pad 8 is disposed at a position where the first shield metal 6 contacts the substrate 1. The first shield metal 6 is connected to the third ground pad 8. In this manner, the first shield metal 6 is grounded using the third ground pad 8 and the second shield metal 7, and the substrate 1 is prefabricated with a ground layer.

[0094] The TWS package further includes a second crystal device 9, a second plastic packaging layer 10, a third shield metal 11, and a ground metal layer 12. The second crystal device 9 is disposed on the other side surface of the substrate 1, and the second plastic packaging layer 10 is disposed on the surface of the second crystal device 9. The third shield metal 11 covers the surface of the second plastic packaging layer 10 and the side surface of the substrate 1, further covers the side surface of the second portion 42 facing away from the first crystal device 2, and further covers the side surface of the adapter substrate 3 facing away from the first crystal device 2. The ground metal layer 12 is located inside the substrate 1, extends from the inside of the substrate 1 to the side surface of the substrate 1, and is connected to the third shield metal 11.

[0095] Specifically, the first crystal device 2 may be specifically a NOR flash memory (NOR flash), an SoC chip, and a crystal, the second crystal device 9 may be specifically a charger chip (charger), a decoding circuit (codec IC), a sensor, an RLC device, a MOS transistor, etc., and the peripheral components may be specifically a gravity sensor.

[0096] It should be understood that when packaging the TWS headset, the first shield metal 6 may be further grounded in other ways. For details, please refer to the above, and the details will not be repeated here.

[0097] An embodiment of the present application further provides a chip packaging method, which may be applicable to the packaging field of electronic devices, especially electronic devices having a circuit board configured to transmit signals.

[0098] 16 is a schematic flow chart of a chip packaging method according to an embodiment of the present application. FIG. 17 is an exploded view of a chip packaging method according to an embodiment of the present application.

[0099] The method provided in the embodiment of the present application is specifically described below. As shown in Figure 16, the method may include the following steps:

[0100] S101: The substrate 1 is baked.

[0101] The substrate 1 may be any circuit board on which ground layer wiring is performed and on which pads are arranged, and specifically, may be a printed circuit board (PCB) or a flexible printed circuit board (FPC).

[0102] The substrate 1 will be corroded by moisture during storage, so that the substrate 1 with a relatively high moisture content is easy to burst during packaging. In order to ensure the packaging effect of the substrate 1, the substrate 1 is baked before the packaging operation. The baking temperature and duration may be 120°C for 8 hours, 150°C for 4-6 hours, 125°C for 24 hours, etc. The exact baking temperature and duration may be selected according to the actual situation.

[0103] During fabrication of the substrate 1, the third ground pad 8 is further disposed to facilitate subsequent grounding of the first shield metal 6. The specific fabrication location of the third ground pad 8 will be described in detail later.

[0104] S102: Solder paste is printed on the side surface of the substrate 1.

[0105] When soldering and packaging the device, the solder can act as a flux.

[0106] S103: The substrate 1 is placed inside the housing 13.

[0107] S104: Bond or solder the first crystal device 2 to the side surface of the substrate 1, fabricate a first ground pad 31 on the adapter substrate 3, and solder the adapter substrate 3 to the side surface of the substrate 1 using the first ground pad 31, where the first ground pad 31 is disposed on the surface of the adapter substrate 3 facing the substrate 1, the first crystal device 2 and the adapter substrate 3 are disposed in parallel, and the adapter substrate 3 is electrically connected to the substrate 1 by the first ground pad 31, so that the adapter substrate 3 is grounded.

[0108] In a specific implementation, the first ground pad 31 may be pre-fabricated on the adapter substrate 3, and the adapter substrate 3 is soldered to the substrate 1 after the first ground pad 31 is fabricated.

[0109] Specifically, the step of bonding the first quartz crystal device 2 may include the following steps.

[0110] S1041: The side surface of the substrate 1 is plasma cleaned.

[0111] The plasma cleaning step may be used to remove excess flux, oil stains, etc. from the surface of the substrate 1 to prepare it for bonding.

[0112] S1042: Apply adhesive to the side surface of the substrate 1.

[0113] This step specifically consists in applying adhesive to the location of the first crystal device 2 to be bonded.

[0114] S1043: The first crystal device 2 is bonded to the side surface of the substrate 1.

[0115] S1044: Wire bonding is performed between the first quartz crystal device 2 and the substrate 1.

[0116] Wire bonding is a method to achieve electrical connection. After wire bonding is performed between the first crystal device 2 and the substrate 1, the electrical connection between the first crystal device 2 and the substrate 1 is performed.

[0117] Further referring to FIG. 16, the chip packaging method provided in the embodiment of the present application further includes the following steps.

[0118] S105: Coat a molding compound on a surface of the first crystal device 2 to form a first portion 41, and coat a molding compound between the adapter substrate 3 and the substrate 1 to form a second portion 42. The first portion 41 and the second portion 42 form a first plastic packaging layer 4, and the first portion 41 and the second portion 42 are integrally formed.

[0119] In order to achieve the functions of insulation, heat dissipation and dustproof, the first part 41 and the second part 42 need to be cured for a certain period of time, after curing, the first part 41 can encase the first crystal device 2, and the second part 42 can be filled between the adapter substrate 3 and the substrate 1. It can also prevent the first crystal device 2 and the adapter substrate 3 from being displaced or damaged when subjected to external force.

[0120] The first portion 41 and the second portion 42 may be molded by a molding tool. The molding compound may include an epoxy resin, an organic silicone resin material, and the like.

[0121] The coating height of the first portion 41 may be flush with the height of the adapter substrate 3 to ensure that the packaged electronic device has a desired flatness and provides a flat surface for the subsequent fabrication of the shielding metal. Furthermore, the coating location of the first portion 41 at one end away from the first crystal device 2 may be flush with the edge of the third ground pad 8 to facilitate the subsequent fabrication of the first shielding metal 6.

[0122] Before fabrication of the first portion 41 and the second portion 42, plasma cleaning may further be performed on the substrate 1 to remove residual adhesives etc. on the surface of the substrate 1.

[0123] S106: After the first portion 41 hardens, cover the surface of the first portion 41 with metal to form a first shield metal 6, where the first shield metal 6 is electrically connected to the first ground pad 31, so that the first shield metal 6 is grounded.

[0124] In a specific implementation, the coating method of the first shield metal 6 can adopt a spray or sputtering process. The spray or sputtering process has a wide effective range in implementation. When the first portion 41 is sprayed or sputtered, the surface of the adapter substrate 3 facing away from the substrate 1 may be affected. Therefore, the surface of the adapter substrate 3 facing away from the substrate 1 needs to be covered with a shielding film to obtain a shielding effect. The specific effective range of the shielding film is related to the extending distance of the first shielding metal 6 on the surface of the adapter substrate 3 facing away from the substrate 1, as will be described in detail below.

[0125] It can be seen from FIG. 11 that in some implementations, the chip packaging method provided in the embodiment of the present application may further include packaging some peripheral components. The peripheral components may be disposed on the side surface of the substrate 1, specifically, on the side of the first shielding metal 6 away from the first crystal device 2, and may be packaged by welding or bonding. The peripheral components may be gravity sensors, etc. The specific fabrication process is to first print solder paste on the surface of the substrate 1 where the peripheral components need to be fabricated, and then solder the peripheral components to the corresponding positions using reflow soldering technology. When the adapter substrate 3 is covered with a shielding film, the positions of the substrate 1 for packaging the peripheral components are also covered with a shielding film, thereby avoiding the influence of spraying or sputtering of the first shielding metal 6 on the subsequent packaging of the peripheral components.

[0126] The chip packaging method provided in the embodiment of the present application further includes the following steps.

[0127] S107: A third ground pad 8 is created at the position where the first shield metal 6 contacts the substrate 1, and the first shield metal 6 is connected to the third ground pad 8, so that the first shield metal 6 is grounded.

[0128] In a specific implementation, the first shield metal 6 may cover a portion of the third ground pad 8 so that the first shield metal 8 may be reliably connected to the ground layer of the substrate 1 by the third ground pad 8.

[0129] In one implementation, the end of the first shield metal 6 away from the adapter substrate 3 is grounded by the third ground pad 8, and the side of the first shield metal 6 closer to the adapter substrate 3 may be grounded using S107 and S108 below.

[0130] See also FIG.

[0131] S108: An interconnect via 32 is fabricated on the adapter substrate 3, where one end of the interconnect via 32 is connected to the first ground pad 31 and the other end of the interconnect via extends through the surface of the adapter substrate 3 facing away from the substrate 1.

[0132] In a specific implementation, this step may be completed before performing S104, ie, fabrication of the adapter board 3 is completed before the adapter board 3 is soldered to the board 1.

[0133] S109: The first shield metal 6 extends from the surface of the first portion 41 to the surface of the adapter substrate 3 facing away from the substrate 1 and is connected to the interconnect via 32, such that the first shield metal 6 is connected to the first ground pad 31 through the interconnect via 32.

[0134] In a specific implementation, in order to achieve grounding of the first shield metal 6, when the first shield metal 6 is fabricated in S106, S109 may be performed simultaneously.

[0135] It should be noted that, when fabricating the first shield metal 6 on the surface of the adapter substrate 3 facing away from the substrate 1, the first shield metal 6 only covers the interconnect vias 32, so that in order to avoid the influence of the spray or sputtering process on other components of the adapter substrate 3, the positions on the adapter substrate 3 except the interconnect vias 32 can be covered with a shield film to play the role of a shield. For the specific covering positions of the shield film, please refer to 17.

[0136] In one implementation, the end of the first shield metal 6 away from the adapter substrate 3 is grounded by the third ground pad 8, and the side of the first shield metal 6 closer to the adapter substrate 3 may be further grounded using S110 and S111 below.

[0137] Referring to FIG. 18, FIG. 18 is an exploded view of another first shield metal packaging according to an embodiment of the present application.

[0138] S110: Fabricate an interconnect via 32 and a second ground pad 33 on the adapter substrate 3. The second ground pad 33 is disposed on a surface of the adapter substrate 3 facing away from the substrate 1, and both ends of the interconnect via 32 are connected to the first ground pad 31 and the second ground pad 33, respectively.

[0139] In a specific implementation, this step can be completed before performing S103, ie, fabrication of the adapter board 3 is completed before the adapter board 3 is soldered to the board 1.

[0140] S111: The first shield metal 6 extends from the surface of the first portion 41 to the surface of the adapter substrate 3 facing away from the substrate 1 and is connected to the second ground pad 33, such that the first shield metal 6 is connected to the first ground pad 31 by the second ground pad 33 and the interconnect via 32.

[0141] In a specific implementation, in order to achieve grounding of the first shield metal 6, when the first shield metal 6 is fabricated in S106, S111 may be performed simultaneously.

[0142] It should be noted that when fabricating the first shield metal 6 on the surface of the adapter substrate 3 facing away from the substrate 1, the first shield metal 6 only covers the second ground pad 33, so that in order to avoid the influence of the spray or sputtering process on other components of the adapter substrate 3, the positions on the adapter substrate 3 except the second ground pad 33 can be covered with a shielding film to play the role of a shield.

[0143] In one implementation, the end of the first shield metal 6 away from the adapter substrate 3 is grounded by the third ground pad 8, and the side of the first shield metal 6 closer to the adapter substrate 3 may be further grounded using S112 and S113 below.

[0144] Referring to FIG. 19, FIG. 19 is an exploded view of another first shield metal packaging according to an embodiment of the present application.

[0145] S112: To form a first shield segment 71, the side surface of the adapter substrate 3 facing the first crystal device 2 is covered with metal, and the end of the first shield segment 71 away from the substrate 1 is connected to the first shield metal 6.

[0146] S113: The surface of the adapter substrate 3 facing the substrate 1 is covered with metal to form a second shield segment 72, one end of the second shield segment 72 is connected to the first shield segment 71 and the other end of the second shield segment is connected to the first ground pad 31.

[0147] The first shield segment 71 and the second shield segment 72 form a second shield metal 6 .

[0148] In a specific implementation, the step of forming the second shield metal 6 is completed before performing S104, i.e., the fabrication of the adapter substrate 3 is completed before the adapter substrate 3 is soldered to the substrate 1.

[0149] In addition, when fabricating the first shield metal 6 on the surface of the adapter substrate 3 facing away from the substrate 1, the first shield metal 6 only covers the first shield segment 71, so that in order to avoid the influence of the spray or sputtering process on other components of the adapter substrate 3, the surface of the adapter substrate 3 facing away from the substrate 1 can be covered with a shielding film and play the role of a shield.

[0150] In one implementation, the end of the first shield metal 6 away from the adapter substrate 3 is grounded by the third ground pad 8, and the side of the first shield metal 6 closer to the adapter substrate 3 may be further grounded using S113 below.

[0151] The second shield metal 7 may include not only the first shield segment 71 and the second shield segment 72, but also the third shield segment 73 to realize the grounding of the first shield metal 6. Referring to Fig. 20, Fig. 20 is an exploded view of another packaging of the first shield metal according to an embodiment of the present application. The specific steps are as follows:

[0152] S114: Cover the surface of the adapter substrate 3 facing away from the substrate 1 with metal to form a third shield segment 73, one end of the third shield segment 73 is connected to the first shield segment 71, the other end of the third shield segment extends a certain distance towards the second ground pad 33, and the third shield segment 73 is connected to the first shield metal 6.

[0153] The first shield segment 71 , the second shield segment 72 and the third shield segment 73 form a second shield metal 7 .

[0154] In a specific implementation, the step of forming the second shield metal 6 is completed before performing S104, i.e., the fabrication of the adapter substrate 3 is completed before the adapter substrate 3 is soldered to the substrate 1.

[0155] In addition, when fabricating the first shield metal 6 on the surface of the adapter substrate 3 facing away from the substrate 1, the first shield metal 6 only covers the third shield segment 73, so in order to avoid the influence of the spraying or sputtering process on other components of the adapter substrate 3, a shield film may be placed on the surface of the adapter substrate 3 facing away from the substrate 1, ensuring that the shield film does not cover the third shield segment 73, thereby playing a shielding role.

[0156] In some implementations, the number of the adapter substrate 3 may be one or more. The method for packaging the adapter substrate 3 may further include the following steps:

[0157] S115: The adapter board 3 is soldered to the side surface of the substrate 1 using the first ground pads 31, and the adapter board 3 is distributed on the edge of the substrate 1.

[0158] The multiple adapter boards 3 may be soldered according to S104, and the specific soldering method may be referred to the description of S104. The multiple adapter boards 3 may be arranged along the edge of the board 1, and the number and specific arrangement positions of the adapter boards 3 may be designed according to the actual situation, which is not particularly limited in this application.

[0159] In some implementations, for situations where double-sided packaging of the substrate 1 is required, refer to Fig. 21, which is a schematic flow chart of another chip packaging method according to an embodiment of the present application. Refer to Fig. 22, which is an exploded view of another chip packaging method according to an embodiment of the present application. Specifically, the packaging method can include the following steps:

[0160] S116: Solder paste is printed on the other surface of the substrate 1.

[0161] In a specific implementation, the substrate 1 may be pre-fired prior to solder paste printing.

[0162] When soldering and packaging the device, the solder can act as a flux.

[0163] S117: Solder or bond a second crystal device 9 to the other surface of the substrate 1.

[0164] From FIG. 12, it can be seen that the second crystal device 9 may be disposed on the surface of the substrate 1 by soldering, or may be directly soldered to the substrate 1, for example, the second crystal device 9a. The second crystal device may also be soldered to the substrate 1 by BGA solder balls, for example, the second crystal device 9b. The second crystal device 9 may further be disposed on the surface of the substrate 1 by bonding, for example, the second crystal device 9c. At this time, wire bonding may be performed between the second crystal device 9c and the substrate 1, so that the second crystal device 9c is electrically connected to the substrate 1.

[0165] In a specific implementation, the second crystal device 9a and the second crystal device 9b to be soldered may be soldered to the substrate 1 by using a reflow soldering process, and then plasma cleaning is performed to remove the solder paste remaining on the surface of the substrate 1. An adhesive is applied to the location where the second crystal device 9c is packaged, and then the third crystal device 9c is bonded to the substrate 1, and then wire bonding is performed.

[0166] S118: Coat the surface of the second crystal device 9 with molding compound to form the second plastic packaging layer 10.

[0167] In a specific implementation, before the fabrication of the second plastic packaging layer 10, plasma cleaning should be further performed to remove residual adhesive and the like on the surface of the substrate 1.

[0168] The second plastic packaging layer 10 needs to be cured for a certain period of time, and after curing, the second plastic packaging layer 10 can encase the second crystal device 9 to achieve the functions of insulation, heat dissipation, and dust prevention. It can also prevent the second crystal device 9 from being displaced or damaged when subjected to external force. The second plastic packaging layer 10 may be formed of a molding compound and molded by a molding jig. The molding compound may include epoxy resin, organic silicone resin material, etc.

[0169] In some implementations, during double-sided packaging, after the fabrication of the second crystal device 9 and the second plastic packaging layer 10 is completed, the first crystal device 2, the first portion 41, the second portion 42, and the first shield metal 6 may be fabricated. For specific fabrication operations, reference may be made to S102, S103, S104, S105, and S106.

[0170] 21 , before soldering the adapter board 3, a second shield metal 7 should be fabricated on the adapter board 3, and a solder resist layer 5 should be further fabricated on the surface of the second ground pad 33.

[0171] S119: After the second plastic packaging layer 10 is cured, cover the surface of the second plastic packaging layer 10 and the side surface of the substrate 1 with metal to form the third shield metal 11.

[0172] In a specific implementation, the coating method of the third shield metal 11 may adopt a spray or sputtering process.

[0173] Before the fabrication of the third shield metal 11, a tin plating operation can be further carried out on the second ground pad 33 of the adapter board 3.

[0174] S120: Prepare a ground metal layer 12 inside the substrate 1, where the ground metal layer 12 extends from the inside of the substrate 1 to a side surface of the substrate 1 and is connected to the third shield metal 11.

[0175] In a specific implementation, this step may be performed simultaneously when the substrate 1 is fabricated.

[0176] In some implementations, the third shield metal 11 can further cover the side surface of the second portion 42 facing away from the first crystal device 9 and the side surface of the adapter substrate 1 facing away from the first crystal device 9. The specific packaging steps are as follows:

[0177] S121: To form the third shield metal 11, the side surface of the second portion 42 facing away from the first crystal device 9 and the side surface of the adapter substrate 3 facing away from the first crystal device 2 are covered with metal.

[0178] In some implementations, during packaging of electronic devices by using the chip packaging method provided in the embodiments of the present application, two or more chips may be packaged at one time to form a package of two or more chips. Under the premise of ensuring the performance and quality of the chips, the package of two or more chips may be singulated into one chip. For example, in the disassembly step shown in FIG. 22, the singulation operation may be performed before S119.

[0179] It should be understood that FIG. 22 only illustrates a situation in which the first shield metal 6 is grounded by the first shield segment 71, the second shield segment 72, and the third shield segment 73, and a situation in which the first shield metal 6 is grounded by other devices will not be described in detail here.

[0180] In some embodiments, the electronic device provided in the embodiments of the present application may be some small device, such as a headset, a smart bracelet, a smart watch, etc.

[0181] According to the technical solution provided in the embodiment of the present application, the shielding between components can be realized without the need to expand the layout space, and the leakage of electromagnetic signals can also be prevented. In addition, when the chip needs to be packaged on both sides, the technical solution provided in the present application can also realize the shielding of the electromagnetic signals. When realizing the shielding, there is no need to add other components, and the process is simple and the integration degree is high.

[0182] In the above specific implementation form, the objectives, technical solutions and advantages of the embodiments of the present application are described in more detail. It should be understood that the above description is only a specific implementation form of the embodiments of the present application, and is not intended to limit the protection scope of the embodiments of the present application. Any modifications, equivalent replacements or improvements made based on the technical solutions of the embodiments of the present application shall be within the protection scope of the embodiments of the present application. [Explanation of symbols]

[0183] 1 Board 2. The First Quartz Crystal Device 2a First crystal device 2b First crystal device 2c The first crystal device 2d The first crystal device 3 Adapter Board 4 First plastic packaging layer 5 Solder resist layer 6 First Shield Metal 7 Second Shield Metal 8 3rd Ground Pad 9. Second Quartz Crystal Device 9a Second crystal device 9b Second Crystal Device 9c Second Crystal Device 10 Second plastic packaging layer 11 Third Shield Metal 12 Ground metal layer 13. Housing 31 First Ground Pad 32 Interconnect Vias 33 Secondary Ground Pad 41 First Part 42 Second Part 71 First shield segment 72 Second Shield Segment 73 Third Shield Segment

Claims

1. 1. An electronic device comprising: Housing and a substrate disposed within the housing; a first crystal device and an adapter substrate arranged in parallel on a side surface of the substrate, the adapter substrate having a first ground pad, the first ground pad being located on a surface of the adapter substrate facing the substrate, the adapter substrate being electrically connected to the substrate by the first ground pad, such that the adapter substrate is grounded; a first portion of a first plastic packaging layer is disposed on a surface of the first crystal device, and a second portion of the first plastic packaging layer is disposed between the adapter substrate and the substrate, the first portion and the second portion being integrally formed; a first shield metal covers a surface of the first portion and is electrically connected to the first ground pad, such that the first shield metal is grounded; An electronic device comprising:

2. the adapter substrate further comprising an interconnect via, one end of the interconnect via connected to the first ground pad and the other end of the interconnect via extending through a surface of the adapter substrate facing away from the substrate; and the first shield metal extends from the surface of the first portion to the surface of the adapter substrate facing away from the substrate and is connected to the interconnect via, such that the first shield metal is connected to the first ground pad through the interconnect via; 2. The electronic device according to claim 1 .

3. the adapter substrate further comprising an interconnect via and a second ground pad; The second ground pad is disposed on a surface of the adapter substrate facing away from the substrate, and two ends of the interconnect via are respectively connected to the first ground pad and the second ground pad; and the first shield metal extends from the surface of the first portion to the surface of the adapter substrate facing away from the substrate and is connected to the second ground pad, such that the first shield metal is connected to the first ground pad by the second ground pad and the interconnect via; 2. The electronic device according to claim 1 .

4. a second shield metal comprising a first shield segment and a second shield segment; The first shield segment is disposed on a side surface of the adapter substrate facing the first crystal device, and an end of the first shield segment away from the substrate is connected to the first shield metal; the second shield segment is disposed on the substrate-facing surface of the adapter board, one end of the second shield segment is connected to the first shield segment, and the other end of the second shield segment is connected to the first ground pad.

4. The electronic device according to claim 3 .

5. the second shield metal further comprises a third shield segment, the third shield segment being disposed on a surface of the adapter substrate facing away from the substrate, one end of the third shield segment being connected to the first shield segment, and the other end of the third shield segment extending a certain distance toward the second ground pad, the third shield segment being connected to the first shield metal; 5. The electronic device according to claim 4.

6. a third ground pad disposed at a position where the first shield metal contacts the substrate, the first shield metal being connected to the third ground pad so that the first shield metal is grounded; 6. An electronic device according to claim 3, characterized in that it comprises:

7. the adapter substrates are distributed around the edges of the substrate; 7. An electronic device according to claim 3, characterized in that it comprises:

8. a second crystal device disposed on the other surface of the substrate; a second plastic packaging layer disposed on a surface of the second quartz crystal device; a third shield metal covering a surface of the second plastic packaging layer and the side surface of the substrate; a ground metal layer located within the substrate, extending from the substrate to the side surface of the substrate and connected to the third shield metal.

8. An electronic device according to claim 7.

9. the third shield metal further covers a side surface of the second portion facing away from the first crystal device and further covers a side surface of the adapter substrate facing away from the first crystal device; 9. The electronic device according to claim 8.

10. the first crystal device comprises one or more of a NOR flash memory, a MOS transistor, a SoC chip, a decoding circuit, a charging chip, an RLC device, a crystal, a Bluetooth chip, a radio frequency chip, a WiFi chip, an NFC chip, or a sensor; 10. An electronic device according to claim 1 , characterized in that it is

11. the second crystal device comprises one or more of a NOR flash memory, a MOS transistor, a SoC chip, a decoding circuit, a charging chip, an RLC device, a crystal, a Bluetooth chip, a radio frequency chip, a WiFi chip, an NFC chip, or a sensor; 10. An electronic device according to claim 8 or 9.

12. The electronic device of claim 5 , wherein the first shield metal, the second shield metal, and the third shield metal are formed by spraying or sputtering.

13. 1. A chip packaging method, comprising: placing a substrate within a housing; bonding or soldering a first crystal device to a side surface of the substrate; fabricating a first ground pad on an adapter substrate and soldering the adapter substrate to the side surface of the substrate using the first ground pad, the first ground pad being disposed on a surface of the adapter substrate facing the substrate, the first crystal device and the adapter substrate being disposed in parallel, and the adapter substrate being electrically connected to the substrate by the first ground pad, such that the adapter substrate is grounded; coating a molding compound on a surface of the first quartz crystal device to form a first portion, and coating a molding compound between the adapter substrate and the substrate to form a second portion, the first portion and the second portion forming a first plastic packaging layer, and the first portion and the second portion being integrally formed; metallizing a surface of the first portion after the first portion is hardened to form a first shield metal, the first shield metal being electrically connected to the first ground pad such that the first shield metal is grounded. A chip packaging method comprising:

14. an interconnect via is fabricated on the adapter substrate, one end of the interconnect via is connected to the first ground pad and the other end of the interconnect via extends through a surface of the adapter substrate facing away from the substrate; the first shield metal extends from the surface of the first portion to the surface of the adapter substrate facing away from the substrate and is connected to the interconnect via, such that the first shield metal is connected to the first ground pad through the interconnect via; 14. The chip packaging method according to claim 13,

15. covering a side surface of the adapter substrate facing the first crystal device with metal to form a first shield segment, the end of the first shield segment away from the substrate being connected to the first shield metal; metallizing a surface of the adapter substrate facing the substrate to form a second shielding segment, one end of the second shielding segment being connected to the first shielding segment and the other end of the second shielding segment being connected to the first ground pad; the first shield segment and the second shield segment form a second shield metal.

15. The chip packaging method according to claim 14,

16. the adapter board is soldered to the side surface of the substrate using the first ground pad, and the adapter board is distributed over an edge of the substrate; 16. The chip packaging method according to claim 15,

17. soldering or bonding a second quartz crystal device to the other surface of the substrate; Coating a molding compound on a surface of the second quartz crystal device to form a second plastic packaging layer; metallizing a surface of the second plastic packaging layer and the side surface of the substrate after the second plastic packaging layer is cured to form a third shield metal; fabricating a ground metal layer within the substrate, the ground metal layer extending from the substrate to the side surface of the substrate and connected to the third shield metal; 17. The chip packaging method according to claim 16,

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