Semiconductor manufacturing apparatus and method for manufacturing semiconductor device

Abstract

To provide a semiconductor manufacturing apparatus and a method for manufacturing a semiconductor device that can suppress adhesion of dust to a wafer.SOLUTION: A semiconductor manufacturing apparatus according to an embodiment includes a chamber, an opening / closing unit, and a pressure control unit. The chamber includes a first housing unit and a second housing unit provided above the first housing unit, and is capable of housing a wafer. The opening / closing unit is provided between the first housing unit and the second housing unit, and opens and closes. The pressure control unit controls the pressure of each of the first housing unit and the second housing unit.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present embodiment relates to a semiconductor manufacturing apparatus and a method for manufacturing a semiconductor device. [Background technology]

[0002] In some cases, drying processing is performed using a batch-type silylation processing device. When cleaning with IPA (Isopropyl Alcohol) after the silylation processing, dust in the chamber after the silylation processing may adhere to the wafer. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2012-039163 A Summary of the Invention [Problem to be solved by the invention]

[0004] A semiconductor manufacturing apparatus and a method for manufacturing a semiconductor device capable of suppressing adhesion of dust to a wafer are provided. [Means for solving the problem]

[0005] The semiconductor manufacturing apparatus according to this embodiment includes a chamber, an opening / closing unit, and a pressure control unit. The chamber includes a first housing unit and a second housing unit provided above the first housing unit, and is capable of housing a wafer. The opening / closing unit is provided between the first housing unit and the second housing unit, and opens and closes. The pressure control unit controls the pressure of each of the first housing unit and the second housing unit. [Brief description of the drawings]

[0006] [Figure 1] FIG. 1 is a diagram showing an example of the configuration of a semiconductor manufacturing apparatus according to a first embodiment. [Diagram 2] 1 is a top view showing an example of the configuration of a semiconductor manufacturing apparatus according to a first embodiment. [Diagram 3] 2A to 2C are diagrams illustrating an example of a method for manufacturing the semiconductor device according to the first embodiment. [Figure 4A] 2A to 2C are diagrams illustrating an example of a method for manufacturing the semiconductor device according to the first embodiment. [Figure 4B] 4B is a diagram showing an example of a method for manufacturing a semiconductor device subsequent to FIG. 4A. FIG. [Figure 4C] 4B, which is a diagram showing an example of the method for manufacturing the semiconductor device. FIG. [Figure 4D] 4D is a diagram showing an example of a method for manufacturing a semiconductor device subsequent to FIG. 4C. FIG. [Diagram 5] 1A to 1C are diagrams illustrating an example of a manufacturing method of a semiconductor device according to a comparative example. [Figure 6] 13 is a diagram showing an example of the configuration of an opening / closing section according to a second embodiment. FIG. [Figure 7] 13A and 13B are diagrams illustrating an example of adjustment of the opening ratio of an opening / closing portion according to the second embodiment. [Figure 8A] 10A to 10C are diagrams illustrating an example of a method for manufacturing a semiconductor device according to a second embodiment. [Figure 8B] 8B is a diagram showing an example of the manufacturing method of the semiconductor device subsequent to FIG. 8A. FIG. [Figure 8C] 8C is a diagram showing an example of the method for manufacturing a semiconductor device subsequent to FIG. 8B. [Figure 8D] 8C, which is a diagram showing an example of the manufacturing method of the semiconductor device. FIG. [Figure 8E] FIG. 8C is a diagram showing an example of the method for manufacturing a semiconductor device, subsequent to FIG. 8D. [Figure 9] 13 is a diagram showing an example of the configuration of an opening / closing section according to a third embodiment. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. The present invention is not limited to this embodiment. The drawings are schematic or conceptual, and the ratio of each part is not necessarily the same as the actual one. In the specification and drawings, elements similar to those described above with respect to the previous drawings are given the same reference numerals, and detailed descriptions are omitted as appropriate.

[0008] (First embodiment) FIG. 1 is a diagram showing an example of the configuration of a semiconductor manufacturing apparatus 1 according to the first embodiment.

[0009] The semiconductor manufacturing equipment 1 includes a chamber 10, an opening / closing unit 20, a differential pressure gauge 30, a pressure reducing unit 40, a pressure control unit 50, a wafer holding unit 60, a supply unit 70, and a processing tank 80.

[0010] The chamber 10 accommodates a wafer W. The wafer W accommodated in the chamber 10 is subjected to cleaning and the like. The chamber 10 can accommodate a plurality of wafers W. Therefore, the semiconductor manufacturing apparatus 1 is a batch-type apparatus. The chamber 10 includes an accommodation section 10a and an accommodation section 10b separated by an opening / closing section 20.

[0011] The opening / closing unit 20 is provided so as to divide the inside of the chamber 10 into the lower storage unit 10a and the upper storage unit 10b. That is, the opening / closing unit 20 is provided between the storage unit 10a and the storage unit 10b. The opening / closing unit 20 is provided, for example, near the center of the chamber 10 in the Z direction. When the opening / closing unit 20 is closed, the inside of the chamber 10 is isolated (divided) into the storage units 10a and 10b. That is, when the opening / closing unit 20 is open, the storage units 10a and 10b are connected. The opening / closing unit 20 opens and closes between the storage unit 10a and the storage unit 10b so that the wafer W can move between the storage unit 10a and the storage unit 10b in the chamber 10. The opening / closing unit 20 is, for example, an openable and closable shutter.

[0012] The opening / closing unit 20 has, for example, two plate-like members that can move in the XY plane. The opening / closing unit 20 is opened and closed, for example, by the plate-like members moving (sliding) in the X direction. The opening / closing unit 20 is closed, for example, by the left plate-like member moving to the right and the right plate-like member moving to the left. The opening / closing unit 20 is opened, for example, by the left plate-like member moving to the left and the right plate-like member moving to the right. In this embodiment, as shown in FIG. 1, the storage unit 10a and the storage unit 10b are separated in a state in which the right end of the left plate-like member and the left end of the right plate-like member are in contact near the center of the X axis of the chamber 10. The opening / closing unit 20 may be opened and closed by one plate-like member moving to the left or right.

[0013] 1 shows the Z direction in which the housing portion 10a and the housing portion 10b are arranged, and the X direction and the Y direction which are perpendicular to the Z direction and perpendicular to each other. In this specification, the +Z direction is treated as the upward direction, and the -Z direction is treated as the downward direction. The -Z direction may or may not coincide with the direction of gravity.

[0014] The differential pressure gauge 30 is a sensor that detects the pressure difference between the pressure P1 in the storage portion 10a and the pressure P2 in the storage portion 10b.

[0015] The decompression unit 40 reduces the pressure inside the chamber 10. The decompression unit 40 reduces the pressure inside the chamber 10, for example, by exhausting gas inside the chamber 10 from an exhaust port (not shown). The decompression unit 40 is, for example, a vacuum pump. The decompression unit 40 has a decompression unit 40a that reduces the pressure inside the storage unit 10a and a decompression unit 40b that reduces the pressure inside the storage unit 10b.

[0016] The pressure control unit 50 controls the pressure in each of the storage units 10a and 10b. More specifically, the pressure control unit 50 controls the pressure reduction units 40a and 40b, respectively, and controls the pressure in each of the storage units 10a and 10b. The pressure control unit 50 controls the pressure in each of the storage units 10a and 10b based on the pressure difference detected by the differential pressure gauge 30.

[0017] The wafer holding unit 60 holds the wafer W. The wafer holding unit 60 moves the wafer W between the accommodation unit 10a and the accommodation unit 10b while holding the wafer W. In this embodiment, the wafer holding unit 60 is, for example, three cylindrical members extending in the Y direction.

[0018] The supply unit 70 (nozzle) supplies gas and the like into the chamber 10. The supply unit 70 includes supply units 71, 72, and 73. The supply units 71, 72, and 73 are provided, for example, on the left and right sides of the wafer W. The supply unit 73 is provided, for example, above the processing tank 80.

[0019] The supply unit 71 is provided in the container 10b. The supply unit 71 is capable of supplying, for example, an inert gas. The inert gas is, for example, N 2 It's gas.

[0020] The supply unit 72 is provided in the storage unit 10b. The supply unit 72 is capable of supplying, for example, an organic solvent in a mist form. The organic solvent is, for example, alcohol. The alcohol is, for example, IPA (Isopropyl Alcohol).

[0021] The supply unit 73 is provided in the container 10a. The supply unit 73 supplies, for example, a mist-like silylation agent and / or N 2 It is possible to supply gas (inert gas). A silylation agent is a chemical that realizes silylation. Silylation means replacing active hydrogen on a substance with a silyl group (-SiR3). A silylation agent contains silicon (Si).

[0022] The processing tank 80 contains pure water and is provided in the container 10a.

[0023] Fig. 2 is a top view showing an example of the configuration of the semiconductor manufacturing apparatus 1 according to the first embodiment. Fig. 2 shows the arrangement of the chamber 10, the supply part 73, and the wafer W as viewed from the Z direction during the silylation process.

[0024] The supply unit 73 has a tube extending in the Y direction. In the example shown in FIG. 2, two supply units 73 are shown. Atomized silylating agent and / or N 2 The gas passes through the inside of the tube and is supplied from holes provided in the tube into the treatment tank 80. The configurations of the supply units 71 and 72 are similar to that of the supply unit 73.

[0025] Next, the operation of the silylation process will be described.

[0026] 3 is a diagram showing an example of a method for manufacturing a semiconductor device according to the first embodiment, in which each process is performed from left to right in FIG.

[0027] First, as shown in FIG. 3(a), the wafer W is immersed in the pure water in the processing tank 80.

[0028] 3(b), the wafer W is moved to the accommodation unit 10b, and the wafer W is cleaned with IPA, whereby the pure water on the wafer W is replaced with IPA.

[0029] Next, as shown in FIG. 3(c), the wafer W is moved to the accommodation part 10a, and the wafer W is subjected to a silylation process.

[0030] 3(d), the wafer W is moved to the accommodation unit 10b, and the wafer W is cleaned with IPA, whereby the pure water on the wafer W is replaced with IPA.

[0031] Next, as shown in (e) of FIG. 3, the wafer W is dried. 2 Gas is supplied, and then the wafer W is unloaded from the chamber 10.

[0032] Next, the pressure control by the pressure control unit 50 will be described in detail.

[0033] 4A to 4D are diagrams illustrating an example of a method for manufacturing a semiconductor device according to the first embodiment, which correspond to the silylation treatment step illustrated in FIG.

[0034] First, as shown in FIG. 4A, the wafer W is silylated. That is, the supply unit 73 supplies the silylation agent to the wafer W accommodated in the accommodation unit 10a. The supply unit 73 also supplies the silylation agent toward the processing tank 80 so that the silylation agent does not roll up throughout the chamber 10. The silylation agent is supplied toward the inside of the processing tank 80 and the entire accommodation unit 10a outside the processing tank 80. For example, the remaining silylation agent that does not adhere to the wafer W when the silylation agent is supplied and the silylation agent that reacts with IPA on the wafer W become dust D. The silylation agent may react with IPA, and may also become dust D. The dust D is not limited to dust generated by the silylation process. However, compared with other processes, the silylation process tends to generate a large amount of dust D. Therefore, this embodiment is preferably used in the silylation process. The pressure control unit 50 controls the pressure P2 in the storage unit 10b to be greater than the pressure P1 in the storage unit 10a at the timing shown in FIG. 4A.

[0035] The supply unit 71 supplies N 2 Supply gas. N 2 The supply of gas may cause the pressure P2 in the storage section 10b to increase.

[0036] Next, as shown in Fig. 4B, after the silylation process is completed, the pressures P1 and P2 in the storage units 10a and 10b are adjusted. More specifically, the pressure reducing unit 40 reduces the pressure in the storage units 10a and 10b. The pressure control unit 50 controls the pressures in the storage units 10a and 10b so that the pressure P2 in the storage unit 10b is equal to or greater than the pressure P1 in the storage unit 10a (P2 ≧ P1) at the timing shown in Fig. 4B.

[0037] Next, as shown in Fig. 4C, the opening / closing part 20 is opened to move the wafer W. At the timing shown in Fig. 4C, while the pressures P1, P2 in the accommodation parts 10a, 10b remain equal to P2 ≧ P1, the opening / closing part 20 is opened. The wafer holding part 60 moves the wafer W from the accommodation part 10b to the accommodation part 10a.

[0038] Since the pressure P2 in the storage section 10b is equal to or greater than the pressure P1 in the storage section 10a, the dust D in the storage section 10a can be prevented from moving to the storage section 10b. The pressure control section 50 may also stop the pressure reduction section 40b that reduces the pressure in the storage section 10b so that the dust D does not move to the storage section 10b.

[0039] Incidentally, the greater the pressure P2 is than the pressure P1, the easier it is to push out the dust D between the wafers W. Therefore, in the steps shown in Figures 4B and 4C, the pressures of the accommodating unit 10a and the accommodating unit 10b may be controlled so that the pressure P2 of the accommodating unit 10b is higher than the pressure P1 of the accommodating unit 10a (P2>P1). Therefore, while the pressures P1, P2 of the accommodating units 10a, 10b remain P2>P1, the opening / closing unit 20 is opened and the wafer W is moved from the accommodating unit 10a to the accommodating unit 10b.

[0040] On the other hand, if the difference between pressure P1 and pressure P2 is large, a sudden airflow may occur due to the pressure difference at the moment the opening / closing unit 20 opens. The sudden airflow may move the dust D to the storage unit 10b. Therefore, the pressure P2 in the storage unit 10b may be approximately the same as the pressure P1 in the storage unit 10a. Therefore, in the process shown in FIG. 4B and FIG. 4C, the pressure control unit 50 may control the pressures in the storage units 10a and 10b so that the pressure P2 in the storage unit 10b is approximately the same as the pressure P1 in the storage unit 10a.

[0041] Next, as shown in FIG. 4D, the opening and closing part 20 is closed, and the gas (atmosphere) inside the storage part 10a is replaced with N 2 That is, the opening and closing unit 20 divides the storage unit 10a and the storage unit 10b. The pressure reducing unit 40a exhausts the gas inside the storage unit 10a, and the supply unit 73 replaces the gas with N 2 The pressure reducing section 40b exhausts the gas inside the storage section 10b, and the supply section 71 supplies N 2Gas is supplied. This makes it possible to exhaust gas containing dust D from inside the storage unit 10a and the storage unit 10b. The pressure control unit 50 controls the pressure P2 of the storage unit 10b to be greater than the pressure P1 of the storage unit 10a at the timing shown in FIG. 4D.

[0042] As described above, according to the first embodiment, the opening / closing unit 20 is provided so as to divide the inside of the chamber 10 into the lower storage unit 10a and the upper storage unit 10b. The opening / closing unit 20 opens and closes between the storage unit 10a and the storage unit 10b so that the wafer W can move between the storage unit 10a and the storage unit 10b in the chamber 10. The pressure control unit 50 controls the pressure of each of the storage unit 10a and the storage unit 10b. This allows the wafer W to be evacuated to an area (storage unit 10b) with less dust D after the silylation process in the storage unit 10a. As a result, the adhesion of dust D to the wafer W can be suppressed.

[0043] Instead of the differential pressure gauge 30, two sensors may be provided to detect the pressure in the storage unit 10a and the pressure in the storage unit 10b, respectively. In this case, for example, the pressure control unit 50 calculates a pressure difference from the detection results of the two sensors, and controls the pressures in the storage units 10a and 10b based on the calculated pressure difference. The sensors are, for example, pressure gauges.

[0044] (Comparative Example) Fig. 5 is a diagram showing an example of a method for manufacturing a semiconductor device according to a comparative example, which illustrates the supply of a silylation agent ((c) of Fig. 3) and the supply of IPA ((d) of Fig. 3) in the process shown in Fig. 3.

[0045] If the pressure of the accommodation parts 10a and 10b is not controlled, after the silylation process, dust D inside the chamber 10 may adhere to the wafer W, thereby contaminating the wafer W. In addition, the dust D may be stirred up by the discharge of the gas or chemical liquid from the supply part 70, thereby contaminating the inside of the chamber 10.

[0046] In contrast, in the first embodiment, the pressure P1 in the accommodation unit 10a and the pressure P2 in the accommodation unit 10b are independently controlled to prevent the dust D from entering a predetermined area (the accommodation unit 10b). As a result, after the silylation process in the accommodation unit 10a, the wafer W can be evacuated to an area (the accommodation unit 10b) where the amount of dust D is relatively small, and adhesion of the dust D to the wafer W can be suppressed.

[0047] In this embodiment, the plate-like member moves in the X direction, but it may move in the Y direction in addition to the X direction. For example, when the number of wafers W accommodated in the chamber 10 is small, a space in which no wafers W are accommodated is generated compared to when the chamber 10 accommodates the maximum number of wafers W that can be accommodated. The plate-like member may be moved so as to open from a portion corresponding to the space in which no wafers W are accommodated. This allows the gas inside the accommodation part 10a containing the dust D to flow through the space in which no wafers W are accommodated, thereby reducing the amount of dust D adhering to the wafers W. That is, the movement of the plate-like member may be controlled according to the arrangement positions of the multiple wafers W in the chamber 10. Also, the arrangement positions of the multiple wafers W may be changed according to the movement of the plate-like member.

[0048] Second embodiment 6 is a diagram showing an example of the configuration of the opening / closing unit 20 according to the second embodiment. In the second embodiment, the configuration of the opening / closing unit 20 is different from that in the first embodiment.

[0049] The opening / closing portion 20 has a plate-shaped member 21 and a plate-shaped member 22 .

[0050] The plate-like member 21 has a plurality of through holes 21a in a pattern Pt1. The plate-like member 21 is, for example, a punched shutter. The shape and arrangement of the through holes 21a (punched holes) are not limited to the example shown in FIG.

[0051] The plate-shaped member 22 is provided so as to overlap the plate-shaped member 21 in the Z direction. The plate-shaped member 22 is movable in the XY plane direction relative to the plate-shaped member 21. The plate-shaped member 22 has a plurality of rectangular through holes 22a (through slits) in a pattern Pt2. The pattern Pt2 is comb-shaped (vertical stripes). The rectangular through holes 22a are an example of a through hole. The plate-shaped member 22 is, for example, a jig (punched lid) capable of blocking the punched holes of the plate-shaped member 21. That is, the plate-shaped member 21 and the plate-shaped member 22 have different configurations.

[0052] Therefore, in addition to opening and closing the two plate-like members, the aperture ratio of the plurality of through-holes 21a of the plate-like member 21 can be adjusted.

[0053] FIG. 7 is a diagram showing an example of adjustment of the opening ratio of the opening / closing section 20 according to the second embodiment.

[0054] By moving one of the plate-like members 21, 22 relative to the other in the XY plane direction, the degree of overlap between the through-hole 21a and the rectangular through-hole 22a changes, so that the opening ratio of the opening / closing section 20 can be adjusted.

[0055] 7 shows a case where the through-hole 21a and the rectangular through-hole 22a are arranged so as not to overlap when viewed from the Z direction. In this case, the opening / closing unit 20 is in a closed state (sealed state).

[0056] The right side of Fig. 7 shows a case where the through hole 21a and the rectangular through hole 22a are arranged to overlap when viewed from the Z direction. In this case, the opening and closing part 20 is in an open state. That is, in Fig. 4B to Fig. 4C of the silylation treatment, the pressure difference allows gas to pass through the opening and closing part 20. Therefore, the open state is also a state where an air flow can be generated from the storage part 10b to the storage part 10a (downflow state).

[0057] The closed state and the open state can be switched by changing the relative position between the plate-like member 21 and the plate-like member 22 as viewed in the Z direction (shifting the positional relationship between the plate-like members 21 and 22). The opening ratio of the opening / closing unit 20 can also be adjusted to a state between the closed state and the open state (for example, a half-open state) shown in Fig. 7. That is, the opening ratio of the opening / closing unit 20 can be adjusted.

[0058] When opening and closing part 20, both of two plate-like members 21, 22 move (slide) in the same manner as the plate-like members according to the first embodiment.

[0059] 8A to 8E are diagrams showing an example of a method for manufacturing a semiconductor device according to the second embodiment. The upper part of Fig. 8A shows the open state (aperture ratio) of the opening / closing section 20.

[0060] First, Fig. 8A shows the time when the silylation process is completed. The process shown in Fig. 8A corresponds to the process shown in Fig. 4B of the first embodiment. At the timing shown in Fig. 8A, the opening / closing part 20 is closed. That is, the through hole 21a and the rectangular through hole 22a do not overlap (sealed state), and the storage part 10a and the storage part 10b are separated by the opening / closing part 20.

[0061] The storage sections 10a and 10b are decompressed. 2 Gas is being supplied.

[0062] Next, as shown in Fig. 8B, the opening state of the opening / closing section 20 is adjusted so as to gradually increase the opening ratio of the opening / closing section 20. That is, the opening / closing section 20 goes from a closed state to a half-open state (Fig. 8B (a)), and then to an open state (Fig. 8B (b)). At the timing shown in Fig. 8B, the opening / closing section 20 opens little by little. That is, the opening / closing section 20 gradually shifts the positions of the plate-like members 21, 22 to gradually increase the opening ratio. By opening the opening / closing section 20 little by little, it is possible to prevent the generation of a sudden air current and to prevent the stirring up of dust D.

[0063] In the step shown in FIG. 8B, the decompression of the storage section 10b is stopped, and N2 Gas is being supplied. Therefore, the pressure P2 of the storage section 10b is higher than the pressure P1 of the storage section 10a. As a result, the opening / closing section 20 is in a state (downflow state) in which airflow can be generated from the storage section 10b to the storage section 10a. That is, the through hole 21a and the rectangular through hole 22a overlap (open state), and the storage section 10a and the storage section 10b are separated by the opening / closing section 20. Therefore, the dust D near the opening / closing section 20 can be pushed further downward. This can further suppress the dust D from being stirred up when the opening / closing section 20 is opened in Figs. 4B to 4C.

[0064] 8C, the opening / closing unit 20 is opened. The opening / closing unit 20 moves both of the two plate-like members 21 and 22. That is, the through hole 21a and the rectangular through hole 22a overlap (open state), and the storage unit 10a and the storage unit 10b are not separated by the opening / closing unit 20.

[0065] Next, as shown in FIG. 8D, the wafer W is moved from the accommodation section 10a to the accommodation section 10b.

[0066] Next, as shown in Fig. 8E, the opening / closing unit 20 is closed. The step shown in Fig. 8E corresponds to the step shown in Fig. 4D of the first embodiment. At the timing shown in Fig. 8E, the opening / closing unit 20 is in a closed state. That is, the through hole 21a and the rectangular through hole 22a do not overlap (sealed state), and the storage unit 10a and the storage unit 10b are separated by the opening / closing unit 20.

[0067] In the second embodiment, the opening ratio of the opening / closing part 20 gradually increases in the process shown in Fig. 8B. This makes it possible to prevent a sudden airflow from occurring even when the pressure P1 in the storage part 10a is higher than the pressure P2 in the storage part 10b.

[0068] It is also preferable that the punched holes are provided substantially uniformly over the entire XY plane of the plate-like member (shutter), thereby improving the straightening of the airflow in the open state (downflow state).

[0069] As in the second embodiment, the configuration of the opening / closing portion 20 may be changed. The semiconductor device according to the second embodiment can obtain the same effects as the first embodiment.

[0070] Third embodiment 9 is a diagram showing an example of the configuration of the opening / closing unit 20 according to the third embodiment. The third embodiment differs from the second embodiment in that the patterns Pt1 and Pt2 of the plate-shaped member 21 and the plate-shaped member 22 are the same.

[0071] The patterns Pt1 and Pt2 are the same, which makes it possible to reduce manufacturing costs.

[0072] The pattern Pt1 shown in FIG. 9 is, for example, comb-shaped like the pattern Pt2 of the second embodiment described with reference to FIG.

[0073] As in the third embodiment, the patterns Pt1 and Pt2 are the same as each other. The semiconductor device according to the third embodiment can obtain the same effects as the second embodiment.

[0074] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope of the invention and its equivalents described in the claims, as well as in the scope and spirit of the invention. [Explanation of symbols]

[0075] 1 semiconductor manufacturing apparatus, 10 chamber, 10a storage section, 10b storage section, 20 opening / closing section, 21 plate-shaped member, 21a through hole, 22 plate-shaped member, 22a rectangular through hole, 30 differential pressure gauge, 40 pressure reducing section, 40a pressure reducing section, 40b pressure reducing section, 50 pressure control section, 70 supply section, 71 supply section, 72 supply section, 73 supply section, D dust, Pt1 pattern, Pt2 pattern, W wafer

Claims

1. a chamber including a first container and a second container provided above the first container, capable of accommodating a wafer; an opening / closing section provided between the first storage section and the second storage section and adapted to open and close; a pressure control unit that controls the pressure in each of the first storage unit and the second storage unit; A semiconductor manufacturing apparatus comprising:

2. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the pressure control section controls the pressure of each of the first and second container sections so that the pressure of the second container section is equal to or greater than the pressure of the first container section.

3. Further comprising a first sensor that detects a pressure difference between the pressure in the first storage section and the pressure in the second storage section, or a second sensor that detects the pressure in the first storage section and the pressure in the second storage section, 2. The semiconductor manufacturing apparatus of claim 1, wherein the pressure control unit controls the pressure of each of the first container unit and the second container unit based on the pressure difference detected by the first sensor, or calculates the pressure difference based on the pressure detected by the second sensor, and controls the pressure of each of the first container unit and the second container unit based on the calculated pressure difference.

4. A first pressure reducing unit that reduces the pressure in the first storage unit; A second pressure reducing section that reduces the pressure in the second storage section; Further equipped with 2 . The semiconductor manufacturing apparatus according to claim 1 , wherein the pressure control unit controls each of the first pressure reducing unit and the second pressure reducing unit to control the pressure of each of the first container unit and the second container unit.

5. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the opening / closing section has a plate-like member that is movable in a direction substantially perpendicular to the up-down direction.

6. The plate-like member is a first plate-like member having a first pattern of a plurality of first through holes; a second plate-like member provided to be overlapped with the first plate-like member, movable in a direction substantially perpendicular to a vertical direction relative to the first plate-like member, and having a second pattern of a plurality of second through holes; Equipped with 6. The semiconductor manufacturing apparatus according to claim 5, wherein the opening state of said opening / closing portion is adjustable.

7. a first supply unit provided in the first container and capable of supplying a silylation agent to the wafer; a second supply unit provided in the second housing unit and capable of supplying alcohol to the wafer; The semiconductor manufacturing apparatus according to claim 1 .

8. Using the semiconductor manufacturing apparatus according to claim 1, The wafer is accommodated in the first accommodation portion; supplying a silylation agent to the wafer accommodated in the first accommodation unit; controlling the pressures of the first and second storage sections so that the pressure of the second storage section is equal to or greater than the pressure of the first storage section; The opening and closing part is opened while the pressure in the second storage part is equal to or higher than the pressure in the first storage part, Moving the wafer from the second housing to the first housing; A method for manufacturing a semiconductor device comprising the steps of:

9. The opening and closing part is closed, The gas inside the first container is replaced with an inert gas. The method for manufacturing a semiconductor device according to claim 8 , further comprising:

10. controlling the pressures of the first storage portion and the second storage portion so that the pressures of the first storage portion and the second storage portion are substantially equal to each other; The opening and closing part is opened while the pressure in the first storage part and the pressure in the second storage part are kept substantially the same. The method for manufacturing a semiconductor device according to claim 8, comprising:

11. The pressure control unit controls the pressure of the first storage unit to be higher than the pressure of the second storage unit; The opening and closing part is opened in a state in which the pressure of the second storage part is higher than the pressure of the first storage part. The method for manufacturing a semiconductor device according to claim 8, comprising:

12. adjusting an opening state of the opening / closing portion so as to gradually increase an opening ratio of the opening / closing portion in a state in which the pressure of the second storage portion is higher than the pressure of the first storage portion; The method for manufacturing a semiconductor device according to claim 11, comprising:

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