Substrate peeling device, substrate peeling method, and semiconductor device manufacturing method

Abstract

To provide a substrate peeling device, a substrate peeling method, and a semiconductor device manufacturing method capable of appropriately peeling a substrate.SOLUTION: A substrate peeling apparatus according to an embodiment includes a suction stage and a light source. A bonded body of a plurality of substrates is suctioned onto the suction stage. The suction stage includes a first region and a second region. The second region is located inside the first region. The light source is capable of irradiating the first region and the second region with laser light sequentially. The suction stage has a weaker suction force for the bonded body in the second region than the suction force for the bonded body in the first region.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present embodiment relates to a substrate peeling apparatus, a substrate peeling method, and a method for manufacturing a semiconductor device. [Background technology]

[0002] When manufacturing a semiconductor device, two substrates are bonded together, and then one of the substrates is peeled off by irradiating it with a laser beam (laser peeling). In a substrate peeling device that performs this laser peeling, it is desirable for the substrate to be peeled off appropriately. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2018-190826 A [Patent Document 2] JP 2018-026415 A [Patent Document 3] Patent No. 6727069 [Patent Document 4] JP 2023-036132 A [Patent Document 5] International Publication No. 2023 / 032706 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of one embodiment is to provide a substrate peeling apparatus, a substrate peeling method, and a semiconductor device manufacturing method that can properly peel a substrate. [Means for solving the problem]

[0005] According to one embodiment, a substrate peeling apparatus is provided that has a suction stage and a light source. A bonded body of a plurality of substrates is suctioned onto the suction stage. The suction stage includes a first region and a second region. The second region is located inside the first region. The light source is capable of irradiating laser light sequentially toward the first region and the second region. The suction stage has a weaker suction force for the bonded body in the second region than the suction force for the bonded body in the first region. [Brief description of the drawings]

[0006] [Figure 1] FIG. 1 is a diagram showing a schematic configuration of a substrate peeling apparatus according to a first embodiment. [Diagram 2] FIG. 2 is a cross-sectional view showing the configuration of a suction stage in the first embodiment. [Diagram 3] FIG. 2 is a plan view showing the configuration of a suction stage in the first embodiment. [Figure 4] FIG. 2 is an enlarged cross-sectional view showing a configuration in the vicinity of the center of the suction stage in the first embodiment. [Diagram 5] FIG. 2 is an enlarged plan view showing a configuration in the vicinity of the center of the suction stage in the first embodiment. [Figure 6] 6 is a flowchart showing a method for manufacturing a semiconductor device according to a modified example of the first embodiment. [Figure 7] 5A to 5C are cross-sectional views showing a method for manufacturing a semiconductor device according to a modified example of the first embodiment. [Figure 8] 5A to 5C are enlarged cross-sectional views showing a method for manufacturing a semiconductor device according to a modified example of the first embodiment. [Figure 9] 5A to 5C are cross-sectional views showing a method for manufacturing a semiconductor device according to a modified example of the first embodiment. [Figure 10] 5A to 5C are enlarged cross-sectional views showing a method for manufacturing a semiconductor device according to a modified example of the first embodiment. [Figure 11] 6A to 6C are plan views showing a method for manufacturing a semiconductor device according to a modified example of the first embodiment. [Figure 12] 5A to 5C are cross-sectional views showing a method for manufacturing a semiconductor device according to a modified example of the first embodiment. [Figure 13]5A to 5C are cross-sectional views showing a method for manufacturing a semiconductor device according to a modified example of the first embodiment. [Figure 14] 6 is a cross-sectional view showing stress relaxation in a modified example of the first embodiment. FIG. [Figure 15] FIG. 11 is an enlarged cross-sectional view showing stress relaxation in a modified example of the first embodiment. [Figure 16] 5A to 5C are cross-sectional views showing a method for manufacturing a semiconductor device according to a modified example of the first embodiment. [Figure 17] 5A to 5C are enlarged cross-sectional views showing a method for manufacturing a semiconductor device according to a modified example of the first embodiment. [Figure 18] FIG. 13 is a diagram showing a schematic configuration of a substrate peeling apparatus according to a second embodiment. [Figure 19] FIG. 11 is a cross-sectional view showing the configuration of a suction stage according to a second embodiment. [Figure 20] FIG. 11 is a plan view showing the configuration of a suction stage in a second embodiment. [Figure 21] FIG. 11 is a cross-sectional view showing the configuration of a central region in a second embodiment. [Figure 22] FIG. 11 is an enlarged plan view showing the configuration of a central region in a second embodiment. [Diagram 23] FIG. 11 is a cross-sectional view showing stress relaxation in a modified example of the second embodiment. [Figure 24] FIG. 11 is an enlarged cross-sectional view showing stress relaxation in a modified example of the second embodiment. [Diagram 25] 10A to 10C are plan views showing a method for manufacturing a semiconductor device according to a third embodiment. [Figure 26] 10A to 10C are cross-sectional views showing a method for manufacturing a semiconductor device according to a third embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A substrate peeling apparatus according to an embodiment will be described in detail below with reference to the accompanying drawings. However, the present invention is not limited to these embodiments.

[0008] (First embodiment) The substrate peeling apparatus according to the first embodiment is used to peel off one of two bonded substrates by irradiating it with laser light (laser peeling) in the manufacture of a semiconductor device, and is devised to peel off the substrate appropriately.

[0009] The substrate peeling apparatus 1 can be configured as shown in Fig. 1. Fig. 1 is a diagram showing a schematic configuration of the substrate peeling apparatus 1.

[0010] The substrate peeling apparatus 1 includes a suction stage 10, a laser module 20, a driving mechanism 30, a driving mechanism 40, an exhaust device 50, and a controller 60. In the following, the direction perpendicular to the bottom surface 10b of the suction stage 10 is defined as the Z direction, and two directions perpendicular to each other in a plane perpendicular to the Z direction are defined as the X direction and the Y direction.

[0011] The controller 60 comprehensively controls each part of the substrate peeling apparatus 1.

[0012] The suction stage 10 is configured to be able to suction the bonded body CB, as shown in Figs. 2 to 5. Fig. 2 is a YZ cross-sectional view showing the configuration of the suction stage 10. Fig. 3 is an XY plan view showing the configuration of the suction stage 10. The YZ cross-sectional view of Fig. 2 corresponds to a cross section taken along line BB in Fig. 3. Fig. 4 is an enlarged YZ cross-sectional view showing the configuration in the vicinity of the center of the suction stage 10, and corresponds to the YZ cross-sectional view of an enlarged portion A in Fig. 2. Fig. 5 is an enlarged XY plan view showing the configuration in the vicinity of the center of the suction stage 10, and corresponds to the plan view of an enlarged portion C in Fig. 3.

[0013] The suction stage 10 includes a region RG1 and a region RG2. The region RG2 is located inside the region RG1 in the XY direction.

[0014] The suction stage 10 has a suction surface 10a and a bottom surface 10b. The suction surface 10a is the +Z side surface of the suction stage 10. The suction surface 10a extends generally along the XY direction. The suction surface 10a is generally flat, but is slightly raised near the center. The bottom surface 10b is the surface of the suction stage 10 on the opposite side (-Z side) to the suction surface 10a. The bottom surface 10b extends along the XY direction. The bottom surface 10b is generally flat.

[0015] The bonded body CB is adsorbed to the adsorption surface 10a. The adsorption stage 10 may adsorb the bonded body CB to the adsorption surface 10a by forming a reduced pressure atmosphere between the bonded body CB and the adsorption stage 10. The reduced pressure atmosphere refers to an atmosphere with a pressure of 10 Pa or less. The bonded body CB is formed by stacking a plurality of substrates SB1, SB2 and bonding them to each other. FIG. 2 illustrates a state in which the adsorption stage 10 adsorbs the bonded body CB to the adsorption surface 10a. The bonded body CB may be substantially circular in an XY plane view. Correspondingly, the adsorption surface 10a may be substantially circular in an XY plane view.

[0016] The suction surface 10a includes a flat surface 10a1 and a convex surface 10a2. The flat surface 10a1 is disposed in an area RG1. The convex surface 10a2 is disposed in an area RG2. The convex surface 10a2 is disposed inside the flat surface 10a1 in the XY direction. In the suction stage 10, the height H2 of the convex surface 10a2 from the bottom surface 10b is higher than the height H1 of the flat surface 10a1 from the bottom surface 10b (see FIG. 2). The flat surface 10a1 extends flat in the XY direction, and the convex surface 10a2 extends generally in the XY direction while rising from the flat surface 10a1 to the +Z side.

[0017] This allows a compressive stress to be selectively applied from the suction stage 10 to the bonded body CB in the vicinity of the convex surface 10a2 in a situation where a tensile stress acts on the suction surface 10a from the bonded body CB to the suction stage 10 when the bonded body CB is suctioned. As a result, the suction force of the suction stage 10 to the bonded body CB in the region RG2 may be weaker than the suction force of the suction stage 10 to the bonded body CB in the region RG1.

[0018] The suction stage 10 further includes a plurality of support pins 11 , a plurality of support pins 12 , a stage base 13 , a partition wall 18 , a support member 14 , a plurality of lift pins 15 , and a plurality of frames 16 .

[0019] The stage base 13 has a main surface 13a and a bottom surface 13b. The main surface 13a is the +Z side surface of the stage base 13. The main surface 13a extends generally along the XY direction. The main surface 13a is generally flat, but is slightly raised near the center. The main surface 13a may be generally circular in the XY plane view. The bottom surface 13b is the surface of the stage base 13 on the opposite side (-Z side) to the main surface 13a. The bottom surface 13b extends along the XY direction. The bottom surface 13b is generally flat. The bottom surface 13b may be the same as the bottom surface 10b of the suction stage 10.

[0020] The principal surface 13a is located on the -Z side of the adsorption surface 10a. The principal surface 13a may extend generally in the XY direction along the adsorption surface 10a. The Z distance between the principal surface 13a and the adsorption surface 10a may be generally constant.

[0021] The main surface 13a includes a flat surface 13a1 and a convex surface 13a2. The flat surface 13a1 is disposed in the region RG1. The convex surface 13a2 is disposed in the region RG2. The convex surface 13a2 is disposed inside the flat surface 13a1 in the XY direction. The height of the convex surface 13a2 from the bottom surface 13b may be higher than the height of the flat surface 13a1 from the bottom surface 13b. The flat surface 13a1 extends flatly in the XY direction, and the convex surface 13a2 extends approximately in the XY direction while rising from the flat surface 13a1 to the +Z side. That is, the flat surface 13a1 and the convex surface 13a2 of the main surface 13a extend corresponding to the flat surface 10a1 and the convex surface 10a2 of the suction surface 10a, respectively. This allows the Z distance between the main surface 13a and the suction surface 10a to be approximately constant.

[0022] The stage base 13 has a main body portion 131 and a convex portion 1311. The main body portion 131 is a substantially plate-shaped member, and extends substantially flat in the XY direction in the regions RG1 and RG2. The main body portion 131 may be substantially circular in the XY plane view.

[0023] The convex portion 1311 is a convex member, and is disposed on the +Z side of the main body portion 131 in the region RG2. The convex portion 1311 may cover the main body portion 131 from the +Z side in the region RG2. The convex portion 1311 may be integrated with the main body portion 131. The convex portion 1311 may be substantially circular in the XY plane view.

[0024] The +Z side surface of main body portion 131 that is not covered by convex portion 1311 and the +Z side surface of convex portion 1311 form main surface 13a of stage base 13. The -Z side surface of main body portion 131 forms bottom surface 13b of the stage base. The upper surface of the +Z side surface of main body portion 131 that is not covered by convex portion 1311 is main flat surface 13a1, and the +Z side upper surface of convex portion 1311 is convex surface 13a2.

[0025] The partition wall 18 is disposed on the outer periphery of the flat surface 13a1 of the main surface 13a. The partition wall 18 extends in an annular shape along the outer periphery of the main body portion 131. The partition wall portion 133 protrudes from the outer periphery of the main surface 13a to the +Z side.

[0026] A recessed space is formed on the +Z side of the stage base 13 by being surrounded by the main surface 13a and the partition wall 18.

[0027] A recessed space SP1 is formed by being surrounded by the flat surface 13a1 and the partition wall 18, and a recessed space SP2 is formed by being surrounded by the convex surface 13a2 and the partition wall 18. The recessed space SP1 is recessed from the suction surface 10a to the -Z side in region RG1. The flat surface 13a1 forms the bottom surface of the recessed space SP1. The recessed space SP2 is recessed from the suction surface 10a to the -Z side in region RG2. The convex surface 13a2 forms the bottom surface of the recessed space SP2.

[0028] The support pins 11 are arranged in the recessed space SP1 in the region RG1. The support pins 11 are arranged on the flat surface 13a1. Each support pin 11 protrudes from the flat surface 13a1 in the Z direction. This allows each support pin 11 to support the bonded body CB from the -Z side in the region RG1 when the bonded body CB is adsorbed onto the adsorption surface 10a.

[0029] The Z heights h11 of the multiple support pins 11 may be equal to each other. The Z height h11 of each support pin 11 may be equal to the Z height of the partition wall 18. The Z height h11 of each support pin 11 may be, for example, 1 to 10 μm. The multiple support pins 11 are arranged in the XY directions in the region RG1. The X-direction arrangement pitch P between the multiple support pins 11 X The X-direction arrangement pitch P between a pair of support pins 11 may be equal to each other. X The Y-direction arrangement pitch P between the plurality of support pins 11 may be, for example, 1 to 5 mm. Y The Y-direction arrangement pitch P between a pair of support pins 11 may be equal to each other. Y The thickness may be, for example, 1 to 5 mm. The top surfaces of the plurality of support pins 11 form a flat surface 10a1.

[0030] The support pins 12 are arranged in the recessed space SP2 in the region RG2. The bottom surface of the recessed space SP2 is raised higher than the bottom surface of the recessed space SP1 due to the influence of the convex portion 1311. The support pins 12 are arranged on the convex surface 13a2. Each support pin 12 protrudes in the Z direction from the convex surface 13a2. This allows each support pin 12 to support the bonded body CB from the -Z side in the region RG2 when the bonded body CB is adsorbed to the adsorption surface 10a.

[0031] The Z heights h12 of the multiple support pins 12 may be uniform to each other. The Z height h12 of each support pin 12 may be uniform to the Z height of the partition wall 18. The Z height h12 of each support pin 12 may be, for example, 1 to 10 μm. The multiple support pins 12 are arranged in the XY directions in the region RG2. The X-direction arrangement pitch P between the multiple support pins 12 X The X-direction arrangement pitch P between a pair of support pins 12 may be equal to each other. X The Y-direction arrangement pitch P between the plurality of support pins 12 may be, for example, 1 to 5 mm. Y The Y-direction arrangement pitch P between a pair of support pins 12 may be equal to each other. Y The thickness may be, for example, 1 to 5 mm. The top surfaces of the plurality of support pins 12 form a convex surface 10a2.

[0032] In the main surface 13a, the convex surface 13a2 may protrude from the flat surface 13a1 to the +Z side in a curved shape in the YZ cross section, may protrude from the flat surface 13a1 to the +Z side in a cylindrical shape, may protrude from the flat surface 13a1 to the +Z side in a prismatic shape, may protrude from the flat surface 13a1 to the +Z side in a conical shape, or may protrude from the flat surface 13a1 to the +Z side in a pyramidal shape. In Fig. 1 and Fig. 2, a configuration in which the convex surface 13a2 protrudes from the flat surface 13a1 in a curved shape is illustrated.

[0033] The Z height h131 of the convex surface 13a2 from the flat surface 13a1 may be, for example, 1 to 10 μm.

[0034] The Z height h11 of each support pin 11 and the Z height h12 of each support pin 12 may be equal to each other. Each support pin 11 is arranged on flat surface 13a1, whereas each support pin 12 is arranged on convex surface 13a2. Therefore, the multiple support pins 12 are raised higher than the multiple support pins 11. The top surfaces and their extended surfaces of the multiple support pins 11 form flat surface 10a1 in region RG1, and the top surfaces and their extended surfaces of the multiple support pins 12 form convex surface 10a2 in region RG2.

[0035] Accordingly, the convex surface 10a2 and the flat surface 10a1 on the adsorption surface 10a may extend along the convex surface 13a2 and the flat surface 13a1 on the main surface 13a, respectively. That is, the convex surface 10a2 may be raised from the flat surface 10a1 in a curved shape toward the +Z side, may be raised from the flat surface 10a1 in a cylindrical shape toward the +Z side, may be raised from the flat surface 10a1 in a prismatic shape toward the +Z side, may be raised from the flat surface 10a1 in a conical shape toward the +Z side, or may be raised from the flat surface 10a1 in a pyramidal shape toward the +Z side. In FIG. 1 and FIG. 2, a configuration in which the convex surface 10a2 is raised from the flat surface 10a1 in a curved shape is illustrated.

[0036] The Z height h10a2 of the convex surface 10a2 from the flat surface 10a1 may be, for example, 1 to 10 μm.

[0037] The convex surface 13a2 may have a substantially circular shape in the XY plane view. The maximum XY width (for example, diameter in the XY plane view) L13a2 of the convex surface 13a2 may be 10 mm or less, for example, 5 to 10 mm.

[0038] The convex surface 10a2 may be substantially circular in the XY plane view. The maximum XY width (eg, diameter in the XY plane view) L10a2 of the convex surface 10a2 may be 10 mm or less, for example, 5 to 10 mm.

[0039] 4, the convex surface 13a2 may rise from the flat surface 13a1 in a smooth curved shape in the YZ cross section. Accordingly, the flat surface 10a1 and the convex surface 10a2 may be formed as a surface in which the top surface and its extension of the support pin 11 and the top surface and its extension of the support pin 12 are smoothly continuous in the Z direction. That is, the convex surface 10a2 may rise while forming a surface that is smoothly continuous from the flat surface 10a1. As a result, the suction stage 10 can suction the bonded body CB while suppressing stress concentration on the suction surface 10a including at least the flat surface 10a1 and the convex surface 10a2 that are smoothly continuous in the Z direction.

[0040] 5, the convex surface 13a2 may be substantially circular in the XY plane. Accordingly, the support pins 11 and the support pins 12 are arranged at a substantially constant X-direction pitch P X , Y-direction pitch P Y In accordance with this, the top surface and its extended surface of the support pin 11 and the top surface and its extended surface of the support pin 12 may form the flat surface 10a1 and the convex surface 10a2 as surfaces that are smoothly continuous in the XY directions. In other words, the convex surface 10a2 may rise from the flat surface 10a1 while forming a smooth continuous surface. In this way, the suction stage 10 can suction the bonded body CB while suppressing stress concentration on the suction surface 10a including the flat surface 10a1 and the convex surface 10a2 that are smoothly continuous at least in the XY directions.

[0041] The stage base 13 further has a vacuum hole 132 , a plurality of lift pin holes 134 , and a plurality of cylindrical portions 135 .

[0042] The vacuum hole 132 is arranged in the main body portion 131 in the region RG1. The vacuum hole 132 may be arranged at any position in the region RG1 that does not interfere with the lift pin holes 134 in the XY plane view. The vacuum hole 132 may extend through the stage base 13 from the main surface 13a to the bottom surface 13b in the region RG1. The vacuum hole 132 communicates with the vacuum pipe 53. The number of vacuum holes 132 arranged in the region RG1 is not limited to one as exemplified in FIGS. 1 to 3, and may be multiple.

[0043] A plurality of lift pin holes 134 are disposed in region RG1. The lift pin holes 134 may extend through region RG1 from main surface 13a to bottom surface 13b of stage base 13.

[0044] The multiple cylindrical portions 135 are disposed at positions corresponding to the lift pin holes 134 in the region RG1, and annularly surround the lift pin holes 134 from the outside in the XY directions. The Z height of the cylindrical portions 135 may be equal to the Z height h11 of the support pins 11.

[0045] The support member 14 is disposed on the -Z side of the stage base 13. The support member 14 rotatably supports the stage base 13 from the -Z side. The support member 14 can be rotated around the Z axis by a drive mechanism 30.

[0046] The multiple lift pins 15 correspond to the multiple lift pin holes 134. Each lift pin 15 is inserted into a corresponding lift pin hole 134. The lift pins 15 can raise and lower the bonded body CB in the Z direction relative to the suction surface 10a while supporting the bonded body CB.

[0047] The plurality of frames 16 correspond to the plurality of lift pins 15. Each frame 16 connects a corresponding lift pin 15 to the support member 14.

[0048] The driving mechanism 30, under the control of the controller 60, can drive the suction stage 10 and the bonded body CB to move up and down in the Z direction and rotate about the Z axis. The driving mechanism 30 has an actuator 31 and a shaft 32. The actuator 31 holds the shaft 32 so as to be drivable. The shaft 32 has an axis along the Z direction and extends in the axial direction. Under the control of the controller 60, the actuator 31 rotates the shaft 32 about its axis and raises the shaft 32 in the Z direction.

[0049] The actuator 31 may have a rotary motor and a linear motor, rotate the shaft 32 about its axis using the rotary motor, and lift the shaft 32 in the Z direction using the linear motor. The actuator 31 may have two rotary motors and a cam mechanism, rotate the shaft 32 about its axis using a first rotary motor, convert the rotational motion of the second rotary motor into translational motion by a cam mechanism, and lift the shaft 32 in the Z direction using the translational motion.

[0050] The shaft 32 is disposed between the actuator 31 and the support member 14. One end of the shaft 32 is held by the actuator 31, and the other end is coupled to the support member 14. The rotational motion of the shaft 32 around its axis is transmitted as the rotational motion of the support member 14, and the rotational motion of the support member 14 can be transmitted as the rotational motion of the suction stage 10 and the bonded body CB via the frame 16 and the lift pins 15.

[0051] The laser module 20 is disposed at a distance from the suction stage 10 on the +Z side. The laser module 20 has a light source 21, an optical system 22, and a housing 23. The light source 21 and the optical system 22 are housed in the housing 23. The housing 23 has an opening on the -Z side. The light source 21 can generate laser light under the control of a controller 60 and irradiate the bonded body CB with the laser light through the optical system 22 and the opening of the housing 23. The optical system 22 may be, for example, a galvano optical system, and can finely adjust the XY irradiation position of the laser light on the bonded body CB under the control of the controller 60.

[0052] The driving mechanism 40 is capable of moving the suction stage 10 in the X and Y directions under the control of the controller 60. This allows the driving mechanism 40 to move the laser module 20 in the X and Y directions relative to the suction stage 10. The driving mechanism 40 holds a stage base 13. Under the control of the controller 60, the driving mechanism 40 is capable of adjusting the X and Y irradiation position of the laser light on the bonded body CB by moving the stage base 13 in the X and Y directions.

[0053] The driving mechanism 40 may gradually move the XY irradiation position of the laser light from an XY position on the outer periphery side to an XY position on the center side of the chucking surface 10a, as shown by the two-dot chain arrow in Fig. 3. At this time, the laser light may be irradiated from the light source 21 to the bonded body CB through the optical system 22 at a predetermined cycle. This allows the light source 21 to irradiate the laser light sequentially toward the region RG1 and the region RG2.

[0054] The exhaust device 50 can evacuate the space between the bonded body CB and the stage base 13 to form a reduced pressure atmosphere between the bonded body CB and the stage base 13. The exhaust device 50 has a vacuum pump 51, an exhaust pipe 52, and an exhaust pipe 53. The exhaust pipe 52 communicates the vacuum pump 51 with the exhaust pipe 53. The exhaust pipe 52 may pass through the support member 14. The exhaust pipe 53 communicates the exhaust pipe 52 with the vacuum hole 132. The exhaust pipe 53 may extend from an XY position near the center along the bottom surface 10b of the suction stage 10 to an XY position of the vacuum hole 132. Under the control of the controller 60, the exhaust device 50 forms a reduced pressure atmosphere between the bonded body CB and the stage base 13, so that the suction stage 10 can vacuum-suck the bonded body CB to the suction surface 10a.

[0055] For example, when the bonded body CB is carried into the +Z side of the suction stage 10 by a conveying device (not shown) or the like and placed on the suction surface 10a, the controller 60 controls the vacuum device 50 to adsorb the bonded body CB onto the suction surface 10a. At this time, the suction stage 10 adsorbs the bonded body CB onto the suction surface 10a so that the convex surface 10a2 on the suction surface 10a rises from the flat surface 10a1 to the +Z side (see FIG. 2). The controller 60 may rotate the suction stage 10 and the bonded body CB around the Z axis by the driving mechanism 30, while gradually moving the housing 23 relatively from an XY position on the outer periphery side of the suction surface 10a to an XY position on the center side by the driving mechanism 40. A laser beam may be irradiated from the light source 21 to the bonded body CB through the optical system 22 at a predetermined cycle. When the housing 23 reaches an XY position corresponding to the region RG2 from an XY position corresponding to the region RG1, the controller 60 may control the optical system 22 to move the XY irradiation position of the laser light back and forth in the XY directions within the region RG2. This allows the light source 21 to cyclically irradiate the laser light along a predetermined trajectory (see FIGS. 11(a) to 11(d)) while passing through the regions RG1 and RG2 in order.

[0056] As described above, in the first embodiment, in the substrate peeling device 1, the suction stage 10 has a main surface 13a of the stage base 13 having a flat surface 13a1 in the region RG1 and a convex surface 13a2 in the region RG2 that rises from the flat surface 13a1 to the +Z side. A plurality of support pins 11 are arranged on the flat surface 13a1, and a plurality of support pins 12 are arranged on the convex surface 13a2. The Z height h11 of each support pin 11 and the Z height h12 of each support pin 12 are equal to each other. The top surfaces and their extended surfaces of the plurality of support pins 11 form a flat surface 10a1 in the region RG1, and the top surfaces and their extended surfaces of the plurality of support pins 12 form a convex surface 10a2 in the region RG2. Accordingly, the suction stage 10 has a suction surface 10a having a flat surface 10a1 in the region RG1 and a convex surface 10a2 in the region RG2 that rises from the flat surface 10a1 to the +Z side. This allows a compressive stress to be selectively applied from the suction stage 10 to the bonded body CB in the vicinity of the region RG2 in a situation where a tensile stress acts on the suction surface 10a from the bonded body CB to the suction stage 10 when the bonded body CB is suctioned. As a result, the suction force of the suction stage 10 on the bonded body CB in the region RG2 may be weaker than the suction force of the bonded body CB in the region RG1. This allows the stress between the substrates SB1 and SB2 to be relaxed when the substrate SB is peeled off in the region RG2, suppressing the occurrence of gouging or the like in the substrate SB, and allowing the substrates SB1 and SB2 in the bonded body CB to be appropriately peeled off from one to the other.

[0057] The substrate peeling apparatus 1 may be applied to a method for manufacturing a semiconductor device 300 as shown in FIG. 6 to FIG. 17. FIG. 6 is a flow chart showing a method for manufacturing a semiconductor device 300 in a modified example of the first embodiment. FIG. 7(a) to FIG. 7(e), FIG. 8(a), FIG. 8(b), FIG. 9(a) to FIG. 9(b), FIG. 10, FIG. 12(a) to FIG. 12(c), FIG. 13(a) to FIG. 13(c), FIG. 16(a) to FIG. 16(e), and FIG. 17 are YZ cross-sectional views showing a method for manufacturing a semiconductor device 300 in a modified example of the first embodiment. FIG. 11(a) to FIG. 11(d) are XY plan views showing a method for manufacturing a semiconductor device 300 in a modified example of the first embodiment. FIG. 14 is a YZ cross-sectional view showing stress relaxation in a modified example of the first embodiment. FIG. 15 is a YZ enlarged cross-sectional view showing stress relaxation in a modified example of the first embodiment, and corresponds to a YZ cross-section obtained by enlarging a portion D in FIG. 14.

[0058] In the manufacturing method of the semiconductor device 300, as shown in Fig. 6, the processing of the lower substrate (S1 to S2) and the processing of the upper substrate (S3 to S4) are performed, for example, in parallel. The lower substrate is the substrate that is disposed on the -Z side of the two substrates to be joined when they are joined. The upper substrate is the substrate that is disposed on the +Z side of the two substrates to be joined when they are joined.

[0059] In preparation of the lower substrate (S1), as shown in Fig. 7(a), a substrate (lower substrate) 2 is prepared. The substrate 2 may be formed of a material mainly composed of a semiconductor (e.g., silicon) that does not substantially contain impurities.

[0060] In the film formation (S2), a predetermined device structure is formed on the main surface 2a side (+Z side) of the substrate 2, as shown in FIG. 7(b).

[0061] For example, a peripheral circuit structure PHC as shown in Fig. 8(a) may be formed. Impurities are introduced into the vicinity of the main surface 2a on the +Z side of the substrate 2 to form a semiconductor region SR. A conductive pattern GT is formed on the main surface 2a of the substrate 2. This forms a plurality of transistors TR, each of which includes a semiconductor region SR and a conductive pattern GT. The peripheral circuit structure PHC including the plurality of transistors TR functions as a peripheral circuit for the memory cell array structure MAR described later.

[0062] After a predetermined device structure is formed, the film 3 is formed by a CVD method or the like. For example, the interlayer insulating film 40 may be formed of a material mainly composed of an insulating material, or may be formed of a material mainly composed of a semiconductor oxide (e.g., silicon oxide). In addition, holes are processed in the interlayer insulating film 40 while the interlayer insulating film 40 is being deposited, and a conductive material is filled in the holes, or a conductive pattern is formed, thereby forming a wiring structure WR electrically connected to the transistor TR. An electrode PD1 electrically connected to the wiring structure WR is formed on the main surface 40a of the +Z side of the interlayer insulating film 40 by plating or the like. For simplification, in FIG. 7(b) and subsequent figures, a film including the conductive pattern GT, the wiring structure WR, the electrode PD1, and the interlayer insulating film 40 is illustrated and described as the film 3. In addition, since the interlayer insulating film 40 occupies the majority of the film 3 in terms of volume, it is treated as if the film 3 may be formed of a material mainly composed of a semiconductor oxide (e.g., silicon oxide). The device structure shown in FIG. 8(a) is an example, and is not particularly limited.

[0063] In preparation of the upper substrate (S3), a substrate (upper substrate) 100 is prepared as shown in Fig. 7(c). The substrate 100 may be formed of a material mainly composed of a semiconductor (e.g., silicon) that does not substantially contain impurities.

[0064] In the film formation (S4), as shown in FIG. 7(d), a film 4 covering the main surface 100b of the substrate 100 is formed by a CVD method or the like.

[0065] For example, a film 4 including a memory cell array structure MAR as shown in FIG. 8(b) may be formed. After depositing an insulating film 60 covering the main surface 100b of the substrate 100, a conductive film is deposited and patterned to form a conductive layer SL. The insulating film 60 may be formed of an insulator such as silicon oxide. The conductive layer SL may be formed of a semiconductor provided with conductivity such as polysilicon containing impurities. Thereafter, an insulating layer and a sacrificial layer (not shown) are alternately deposited multiple times on the +Z side of the conductive layer SL to form a stacked body LM. The insulating layer may be formed of an insulator such as silicon oxide. The sacrificial layer may be formed of an insulator capable of ensuring an etching selectivity between the insulating layer and the insulating layer such as silicon nitride. Each insulating layer and each sacrificial layer may be deposited with approximately the same film thickness.

[0066] A resist pattern with linear openings extending in the Y direction is formed on the -Z side of the laminate. Using the resist pattern as a mask, anisotropic etching such as RIE (Reactive Ion Etching) is performed to form a groove penetrating the laminate LM in the YZ direction. Then, a dividing film (not shown) is embedded in the groove. The dividing film may be formed of a material mainly composed of an insulator (e.g., silicon oxide). The dividing film extends in the YZ direction on the -X side of the laminate LM. The dividing film divides the laminate LM from the other laminates LM on the -X side. In each laminate LM, insulating layers and sacrificial layers are alternately stacked multiple times. Each laminate LM has a substantially rectangular shape with the Y direction as the longitudinal direction in the XY plane view.

[0067] A resist pattern with an opening for forming a memory hole is formed on the -Z side of each laminate. Anisotropic etching such as RIE is performed using the resist pattern as a mask to form a memory hole that penetrates the laminate LM and reaches the conductive layer SL.

[0068] A block insulating film, a charge storage film, and a tunnel insulating film are deposited in this order on the side and bottom of the memory hole. The block insulating film may be made of an insulating material such as silicon oxide. A portion of the tunnel insulating film on the bottom of the memory hole is selectively removed.

[0069] A semiconductor film is deposited on the side and bottom surfaces of the memory hole. The semiconductor film may be made of a material mainly composed of a semiconductor (e.g., polysilicon). Then, a core member is embedded in the memory hole. The core member may be made of an insulator such as silicon oxide. This forms a plurality of pillars PL each penetrating the stack LM in the Z direction. The plurality of pillars PL are formed so as to be arranged in the XY directions.

[0070] The sacrificial layer of the laminate LM is removed. A block insulating film is formed on the exposed surface of the void formed by the removal. The block insulating film may be made of an insulator such as aluminum oxide. A conductive layer WL is further embedded in the void. The conductive layer WL may be made of a material mainly composed of a conductor (e.g., a metal such as tungsten). This forms a laminate LM in which the conductive layers WL and insulating layers are alternately and repeatedly stacked. A memory cell is formed at the position where the conductive layer WL intersects with the semiconductor film of the pillar PL. That is, a memory cell array structure MAR is formed in which a plurality of memory cells are arranged three-dimensionally.

[0071] An interlayer insulating film 50 is further formed to cover the laminate LM. By repeatedly forming a resist pattern and slimming and etching, a staircase structure is formed in which the conductive layers WL are drawn out in a staircase shape on both sides of the laminate LM in the Y direction. A conductive plug CC electrically connected to each conductive layer WL is formed by forming holes in the interlayer insulating film 50 and filling a conductive material therein. In addition, as the interlayer insulating film 50 is deposited, holes are processed in the interlayer insulating film 50, a conductive material is filled in the interlayer insulating film 50, and a conductive pattern is formed, thereby forming a wiring structure WR2 electrically connected to the conductive plug CC. An electrode PD2 electrically connected to the wiring structure WR2 is formed on the main surface 50a on the -Z side of the interlayer insulating film 50 by plating or the like. In FIG. 7(d) and subsequent figures, for simplification, a film including the memory cell array structure MAR, the conductive plug CC, the wiring structure WR2, the electrode PD2, and the interlayer insulating films 50 and 60 is illustrated and described as a film 4. In addition, the material of the film 4 is mainly treated as the material of the interlayer insulating film 60. Note that the device structure shown in FIG. 8(b) is an example and is not particularly limited. Also, although one memory cell array structure MAR is shown in FIG. 8(b), there may be a plurality of memory cell array structures MAR.

[0072] The film 4 may be formed of any material having a higher infrared light absorption rate than the substrate 100. The film 4 may be formed of any material having a higher absorption rate than the substrate 100 at a laser wavelength (e.g., 9200 nm or more and 10800 nm or less) suitable for the film 4 to function as a laser absorption layer. The film 4 may be formed of a material mainly composed of an insulator, or a material mainly composed of a semiconductor oxide (e.g., silicon oxide).

[0073] As shown in FIG. 6, when the processing of the lower substrate (S1-S2) and the processing of the upper substrate (S3-S4) are both completed, the upper substrate and the lower substrate are bonded (S5). The +Z side main surface 3a (see FIG. 7(b)) of the film 3 and the -Z side main surface 4b (see FIG. 7(d)) ​​of the film 4 are activated by plasma irradiation or the like, and the substrate 2 and the substrate 100 are disposed opposite to each other in the Z direction so that the main surfaces 3a and 4b face each other, as shown in FIG. 7(e). As shown in FIG. 7(e), FIG. 9(a) and FIG. 10, the XY position of the substrate 2 and the XY position of the substrate 100 are aligned so that the XY position of the electrode PD1 on the main surface 3a corresponds to the XY position of the electrode PD2 on the main surface 4b. As shown in FIG. 9(a) and FIG. 10, the substrate 2 and the substrate 100 are brought close to each other in the Z direction, and the main surface 3a on the substrate 2 side and the main surface 4b on the substrate 100 side are bonded by direct bonding. At this time, atoms of the main surface 3a and atoms of the main surface 4b are bonded by hydrogen bonds or the like, and the substrate 2 and the substrate 100 are temporarily bonded to each other.

[0074] Therefore, as shown in FIG. 6, a heat treatment (annealing) is performed at a relatively low temperature (S6). In the heat treatment (annealing), the substrate 2 and the substrate 100 are heated as a whole, as shown by the dotted arrow in FIG. 9(b). In the heat treatment, for example, the substrate 2 and the substrate 100 are each heated to a relatively low temperature (i.e., an allowable temperature of the device structure, for example, about 200° C.) for a predetermined time. At this time, the atoms of the main surface 3a and the atoms of the main surface 4b are bonded by covalent bonds or the like due to water molecules being removed from the interface, and the substrate 2 and the substrate 100 are in a fully bonded state. As a result, a bonded body CB of the substrate 2 and the substrate 100 is formed. At this time, the electrode PD1 and the electrode PD2 are bonded by direct bonding, and the peripheral circuit structure PHC and the memory cell array structure MAR can be electrically connected.

[0075] When S6 shown in FIG. 6 is completed, a conveying device (not shown) or the like carries the bonded body CB into the +Z side of the suction stage 10 of the substrate peeling device 1 (see FIG. 1) and places it on the suction surface 10a. The substrate peeling device 1 controls the vacuum device 50 to suction the bonded body CB onto the suction surface 10a. At this time, the suction stage 10 suctions the bonded body CB onto the suction surface 10a so that the suction surface 10a has a flat surface 10a1 in the region RG1 and a convex surface 10a2 in the region RG2 (see FIG. 2). In this state, the substrate peeling device 1 irradiates the bonded body CB with a laser beam 200 from the substrate 100 side so that the focal point is located near the film 4 (S7).

[0076] In this embodiment, one irradiation of the laser light 200 includes irradiation of the entire surface of the substrate with the laser light 200 from the first irradiation to the Nth irradiation, where N is any integer of 2 or more.

[0077] The substrate peeling apparatus 1 irradiates the laser beam 200 in a wavelength range in which the light absorption rate of the film 4, which is the laser absorbing layer, is greater than that of the substrate 100 (preferably 1117 nm or more, more preferably near 9300 nm or near 10600 nm, when the laser absorbing layer is a silicon oxide film). A pulsed laser is used as the laser beam 200. An infrared laser may also be used as the laser beam 200. The laser beam 200 is preferably a carbon dioxide laser (CO 2 The absorption of the laser light 200 occurs depending on the absorption coefficient and thickness of the substrate or film, and in this structure, the laser is most absorbed in the film 4 which becomes the laser absorption layer.

[0078] At this time, the substrate peeling apparatus 1 irradiates the laser light 200 so that a plurality of irradiated parts are two-dimensionally distributed in the film 4 as shown in Fig. 11. The substrate peeling apparatus 1 irradiates the laser light 200 so that a plurality of irradiated parts are spaced apart from each other in the XY plane direction. The substrate peeling apparatus 1 irradiates the laser light 200 by adjusting the irradiation interval to an appropriate interval for peeling, taking into account the heat accumulation effect due to local heat generation in the film 4.

[0079] The substrate peeling apparatus 1 may irradiate the laser light 200 while changing the conditions in multiple stages. As shown in Fig. 11(c), the region RG1 in the suction stage 10 is divided into an outer region RG11 and an inner region RG12. Figs. 11(a) to 11(d) illustrate a case in which the substrate peeling apparatus 1 irradiates the laser light 200 while changing the conditions in three stages: region RG11 → region RG12 → region RG2. Fig. 11(d) is an XY enlarged plan view showing an enlarged view of the region RG2 in Fig. 11(c).

[0080] In the laser irradiation of the region RG11 shown in FIG. 11(a), the substrate peeling device 1 moves the laser module 20 relative to the suction stage 10 from the outer periphery to the inner periphery while rotating the suction stage 10 at a gradually increasing rotation speed. In this way, the substrate peeling device 1 moves the irradiation part of the laser light 200 along a spiral trajectory that gradually moves from the outer periphery to the inner periphery in the region RG11. The pulse frequency of the laser light may be a fixed value of, for example, 10 to 100 kHz. The pitch PP1 of the irradiation part may be 15 μm. The radius of the irradiation part may be 12 mm or less. The rotation speed of the suction stage 10 may be adjusted to gradually increase in the range of 0.80 rotations / second to 47.8 rotations / second.

[0081] For example, as shown in FIG. 12(a), the substrate peeling apparatus 1 determines the XY plane position to be irradiated with the first laser beam 200-1, and adjusts the focal point of the laser beam 200-1 so that it is located within the film 4. The XY plane position to be irradiated may be the starting position of a spiral trajectory (see FIG. 11(a)). The film 4 has a higher absorption rate of the laser beam 200-1 than the substrate 100. As a result, the laser beam 200-1 irradiated to the film 4 through the substrate 100 is efficiently absorbed at the irradiated location within the film 4, and the film 4 is locally heated at the XY plane position.

[0082] 12(b), the localized heat generation in the film 4 is transferred to the interface between the film 4 and the substrate 100. The thermal expansion coefficient of the substrate 100 is larger than that of the film 4, and therefore, at that position in the XY plane, the substrate 100 expands toward the film 4, forming a convex portion 101 where the substrate 100 protrudes toward the film 4, and the periphery of the convex portion becomes a concave portion 102. As a result, a compressive stress is generated at the interface between the tip of the convex portion 101 and the film 4, but a tensile stress is generated at the interface between the bottom surface of the concave portion 102 and the film 4, and the film 4 and the substrate 100 may be partially peeled off around that position in the XY plane.

[0083] As shown in FIG. 12(c), the substrate peeling device 1 determines the XY plane position to be irradiated with the second laser beam 200-2 to a position shifted in the XY plane direction from the XY plane position in FIG. 12(a), and adjusts so that the focal point of the laser beam 200-2 is located within the film 4. The position shifted in the XY plane direction from the XY plane position in FIG. 12(a) may be a position shifted from the start position along a spiral trajectory (see FIG. 11(a)). The absorption rate of the laser beam 200-2 in the film 4 is greater than the absorption rate of the laser beam 200-2 in the substrate 100. As a result, the laser beam 200-2 irradiated to the film 4 through the substrate 100 is efficiently absorbed at the irradiated location in the film 4, and the film 4 is locally heated at the XY plane position.

[0084] 13(a), the localized heat generation in the film 4 is transferred to the interface between the film 4 and the substrate 100. The thermal expansion coefficient of the substrate 100 is larger than that of the film 4, and therefore the substrate 100 expands toward the film 4 at that position in the XY plane, forming a convex portion 101 where the substrate 100 protrudes toward the film 4, and the periphery of the convex portion becomes a concave portion 102. As a result, a compressive stress is generated at the interface between the tip of the convex portion 101 and the film 4, but a tensile stress is generated at the interface between the bottom surface of the concave portion 102 and the film 4, and the film 4 and the substrate 100 may be partially peeled off around that position in the XY plane.

[0085] Although not shown, the substrate peeling device 1 determines the XY plane position to be irradiated with the k-th irradiation laser beam 200-k immediately before reaching the region RG12 to be a position shifted in the XY plane direction from the XY plane position of the k-1st irradiation, and adjusts so that the focus of the laser beam 200-k is located within the film 4. k is an integer greater than any 2 and less than N. The position shifted in the XY plane direction from the XY plane position of the k-1st irradiation may be a position shifted from the position of the k-1st irradiation along a spiral trajectory (see FIG. 11(a)). The absorptance of the laser beam 200-k in the film 4 is greater than the absorptance of the laser beam 200-k in the substrate 100. As a result, the laser beam 200-k irradiated to the film 4 through the substrate 100 is efficiently absorbed at the irradiation point in the film 4, and the film 4 is locally heated at the XY plane position.

[0086] The local heat generation in the film 4 is transferred to the interface between the film 4 and the substrate 100. The thermal expansion coefficient of the substrate 100 is larger than that of the film 4, and therefore the substrate 100 expands toward the film 4 at that position in the XY plane, forming a convex portion 101 where the substrate 100 protrudes toward the film 4, and the periphery of the convex portion becomes a concave portion 102. As a result, a compressive stress is generated at the interface between the tip of the convex portion 101 and the film 4, but a tensile stress is generated at the interface between the bottom surface of the concave portion 102 and the film 4, and the film 4 and the substrate 100 may be partially peeled off around that position in the XY plane.

[0087] In the laser irradiation of the region RG12 shown in FIG. 11(b), the substrate peeling device 1 moves the laser module 20 gradually from the outer periphery to the inner periphery relative to the suction stage 10 while rotating the suction stage 10 at a fixed rotation speed. In this way, the substrate peeling device 1 moves the irradiation part of the laser light 200 along a spiral trajectory gradually moving from the outer periphery to the inner periphery in the region RG12. The pulse frequency of the laser light may be gradually increased, for example, in the range of 10 to 100 kHz. The pitch PP2 of the irradiation part may be smaller than PP1. The radius of the irradiation part may be gradually decreased in the range of 12 mm to 2.5 mm. The rotation speed of the suction stage 10 may be fixed at 47.8 rotations / second.

[0088] Although not shown, the substrate peeling device 1 determines the XY plane position to be irradiated with the k+1th irradiation laser beam 200-(k+1) immediately after reaching the region RG12 as a position shifted in the XY plane direction from the kth irradiation position, and adjusts so that the focus of the laser beam 200-(k+1) is located within the film 4. The position shifted in the XY plane direction from the kth irradiation position may be a position shifted from the kth irradiation position along a spiral trajectory (see FIG. 11(a)). The absorption rate of the laser beam 200-(k+1) in the film 4 is greater than the absorption rate of the laser beam 200-(k+1) in the substrate 100. As a result, the laser beam 200-(k+1) irradiated to the film 4 through the substrate 100 is efficiently absorbed at the irradiation point in the film 4, and the film 4 is locally heated at the XY plane position.

[0089] The local heat generation in the film 4 is transferred to the interface between the film 4 and the substrate 100. The thermal expansion coefficient of the substrate 100 is larger than that of the film 4, and therefore the substrate 100 expands toward the film 4 at that position in the XY plane, forming a convex portion 101 where the substrate 100 protrudes toward the film 4, and the periphery of the convex portion becomes a concave portion 102. As a result, a compressive stress is generated at the interface between the tip of the convex portion 101 and the film 4, but a tensile stress is generated at the interface between the bottom surface of the concave portion 102 and the film 4, and the film 4 and the substrate 100 may be partially peeled off around that position in the XY plane.

[0090] Although not shown, the substrate peeling device 1 determines the XY plane position to be irradiated with the j-th irradiation laser beam 200-j immediately before reaching the region RG2 to be a position shifted in the XY plane direction from the XY plane position of the j-1st irradiation, and adjusts so that the focus of the laser beam 200-j is located within the film 4. j is an integer that is any k or more and is less than N. The position shifted in the XY plane direction from the XY plane position of the j-1st irradiation may be a position shifted from the position of the j-1st irradiation along a spiral trajectory (see FIG. 11(b)). The absorptance of the laser beam 200-j in the film 4 is greater than the absorptance of the laser beam 200-j in the substrate 100. As a result, the laser beam 200-j irradiated to the film 4 through the substrate 100 is efficiently absorbed at the irradiation point in the film 4, and the film 4 is locally heated at the XY plane position.

[0091] The local heat generation in the film 4 is transferred to the interface between the film 4 and the substrate 100. The thermal expansion coefficient of the substrate 100 is larger than that of the film 4, and therefore the substrate 100 expands toward the film 4 at that position in the XY plane, forming a convex portion 101 where the substrate 100 protrudes toward the film 4, and the periphery of the convex portion becomes a concave portion 102. As a result, a compressive stress is generated at the interface between the tip of the convex portion 101 and the film 4, but a tensile stress is generated at the interface between the bottom surface of the concave portion 102 and the film 4, and the film 4 and the substrate 100 may be partially peeled off around that position in the XY plane.

[0092] In the laser irradiation of the region RG2 shown in FIG. 11(c) and FIG. 11(d), the substrate peeling device 1 controls the optical system 22 so that the XY irradiation position of the laser light reciprocates in the XY direction within the region RG2 while the rotation of the suction stage 10 is stopped. In this way, the substrate peeling device 1 moves the irradiation part of the laser light 200 along a zigzag trajectory in the region RG2. FIG. 11(d) illustrates an irradiation pattern in which the XY irradiation position of the laser light gradually shifts in the Y direction while reciprocating in the X direction. The pulse frequency of the laser light may be fixed, for example, in the range of 10 to 100 kHz. The pitch PP3 of the irradiation part may be smaller than PP2. The radius of the irradiation part may be gradually reduced in the range of 2.5 mm to 0.1 mm.

[0093] Note that, although FIG. 11(d) illustrates an example in which the substrate peeling apparatus 1 moves the irradiation portion of the laser light 200 in the region RG2 along a zigzag trajectory, the substrate peeling apparatus 1 may also move the irradiation portion of the laser light 200 in the region RG2 along a spiral trajectory (see FIG. 25).

[0094] Although not shown, the substrate peeling device 1 determines the XY plane position to be irradiated with the j+1th irradiation laser beam 200-(j+1) immediately after reaching the region RG12 as a position shifted in the XY plane direction from the jth irradiation position, and adjusts so that the focus of the laser beam 200-(j+1) is located within the film 4. The position shifted in the XY plane direction from the jth irradiation position may be a position shifted from the jth irradiation position along a spiral trajectory (see FIG. 11(b)). The absorption rate of the laser beam 200-(j+1) in the film 4 is greater than the absorption rate of the laser beam 200-(j+1) in the substrate 100. As a result, the laser beam 200-(j+1) irradiated to the film 4 through the substrate 100 is efficiently absorbed at the irradiation point in the film 4, and the film 4 is locally heated at the XY plane position.

[0095] The local heat generation in the film 4 is transferred to the interface between the film 4 and the substrate 100. The thermal expansion coefficient of the substrate 100 is larger than that of the film 4, and therefore the substrate 100 expands toward the film 4 at that position in the XY plane, forming a convex portion 101 where the substrate 100 protrudes toward the film 4, and the periphery of the convex portion becomes a concave portion 102. As a result, a compressive stress is generated at the interface between the tip of the convex portion 101 and the film 4, but a tensile stress is generated at the interface between the bottom surface of the concave portion 102 and the film 4, and the film 4 and the substrate 100 may be partially peeled off around that position in the XY plane.

[0096] As shown in FIG. 13(b), the substrate peeling device 1 determines the final XY plane position to be irradiated with the Nth laser beam 200-N, and adjusts the focal point of the laser beam 200-N to be located within the film 4. The final XY plane position may be the final position along a zigzag trajectory (see FIG. 11(d)). The film 4 has a higher absorption rate of the laser beam 200-N than the substrate 100. As a result, the laser beam 200-N irradiated to the film 4 through the substrate 100 is efficiently absorbed at the irradiated location within the film 4, and locally heats the film 4 at the final XY plane position.

[0097] 13(c), the localized heat generation in the film 4 is transferred to the interface between the film 4 and the substrate 100. The thermal expansion coefficient of the substrate 100 is larger than that of the film 4, and therefore, at the final XY plane position, the substrate 100 expands toward the film 4, forming a convex portion 101 where the substrate 100 protrudes toward the film 4, and the periphery of the convex portion becomes a concave portion 102. As a result, a compressive stress is generated at the interface between the tip of the convex portion 101 and the film 4, but a tensile stress is generated at the interface between the bottom surface of the concave portion 102 and the film 4, and the film 4 and the substrate 100 may be partially peeled off around the final XY plane position.

[0098] At this time, as shown in Figures 14 and 15, the convex surface 10a2 of the region RG2 of the suction stage 10 is raised from the flat surface 10a1 of the region RG1 toward the +Z side (see Figure 2). This makes it possible to selectively generate stress in the direction opposite to the suction force at the interface between the suction stage 10 and the bonded body CB in the region RG2, thereby reducing the suction force. That is, the suction stage 10 can make the suction force of the bonded body CB in the region RG2 weaker than the suction force of the bonded body CB in the region RG1. In Figures 14 and 15, the stress in the region RG2 is indicated by a dotted arrow, and the stress in the region RG1 is indicated by a solid arrow. The dotted arrow indicates a smaller stress than the solid arrow.

[0099] 14 and 15, in a state where the film 4 and the substrate 100 are partially connected at a portion corresponding to the region RG2, the connection portion may be subjected to a tensile stress in the -Z direction due to suction from the suction stage 10 and a tensile stress in the +Z direction due to deformation of the substrate 100. Among these, the tensile stress in the region RG2 on the suction surface 10a of the suction stage 10 is relaxed compared to the tensile stress in the region RG1, so that the connection portion between the film 4 and the substrate 100 near the final XY plane position can be gradually peeled off. As a result, it is possible to suppress the occurrence of defects such as gouges in the final peeled portions corresponding to the region RG2 in each of the film 4 and the substrate 100.

[0100] As the partial peeling progresses gradually, peeling occurs at the interface between the film 4 and the substrate 100 (S9). That is, as shown in Fig. 16(a), the substrate 100 is peeled off from the laminate 6 in which the film 3 and the film 4 are laminated on the substrate 2.

[0101] Considering subsequent processing, the peeled surface of the laminate 6 is treated (S9) as shown in Fig. 6. In the laminate 6, a plurality of convex portions 4a2 are distributed in the XY direction on the main surface 4a on the +Z side of the film 4 as shown in Fig. 16(b). The main surface 4a is polished and flattened by a CMP method or the like.

[0102] As a result, as shown in FIG. 16(c), a semiconductor device 300 is obtained in which the film 3 and the film 4 are laminated on the substrate 2 and the main surface 4a of the film 4 is flattened.

[0103] 17, after planarization, holes are formed in the main surface 60a on the +Z side of the interlayer insulating film 60 and a conductive material is filled in to form a conductive plug PG electrically connected to the conductive layer SL. An electrode pattern EL electrically connected to the conductive plug PG is formed on the main surface 60a of the interlayer insulating film 60 by plating or the like. Although not shown, an electrode pattern EL connected to the peripheral circuit structure PHC, bypassing the memory cell array structure MAR, is also formed on the main surface 60a of the interlayer insulating film 60. This makes it possible to supply power, signals, and the like from the outside to the memory cell array structure MAR and the peripheral circuit structure PHC.

[0104] The film 4 including the memory cell array structure MAR can be regarded as a chip region for the memory cell array, and the film 3 including the peripheral circuit structure PHC and the substrate 2 can be regarded as a chip region for the peripheral circuit. The semiconductor device 1 has a structure obtained by directly bonding the chip region for the memory cell array and the chip region for the peripheral circuit. This structure is also called CBA (CMOS directly bonded to array). In the CBA, the number of chip regions for the memory cell array bonded to the +Z side of the chip region for the peripheral circuit is not limited to one, and may be two or more.

[0105] On the other hand, the peeled substrate 100 is reused (S10) as shown in Fig. 6. The substrate 100 may be reused as an upper substrate 100 as shown by the solid arrow in Fig. 6.

[0106] As shown in Fig. 16(d), immediately after peeling, the substrate 100 has a plurality of protrusions 101a distributed in the XY direction on the -Z side of the main surface 100b. The main surface 100b is polished and flattened by a CMP method or the like. This results in a substrate 100 with a flattened main surface 100b, as shown in Fig. 16(e). Since the main surface 100b of the substrate 100 shown in Fig. 16(e) is flattened, it can be easily reused as, for example, the upper substrate 100.

[0107] Instead of being reused as the upper substrate 100, the peeled substrate 100 may be reused as the lower substrate 2 as indicated by the dotted arrow in FIG.

[0108] In this manner, by applying the substrate peeling apparatus 1 to the manufacturing method of the semiconductor device 300 as shown in Figures 6 to 17, the substrate 100 in the bonded body CB can be properly peeled from the laminate 6 in which the film 3 and the film 4 are laminated on the substrate 2.

[0109] Second embodiment Next, a substrate peeling apparatus according to a second embodiment will be described, focusing on the differences from the first embodiment.

[0110] In the first embodiment, a structure is exemplified in which the convex surface 10a2 of region RG2 in the suction stage 10 protrudes from the flat surface 10a1 of region RG1 toward the +Z side, while in the second embodiment, a structure is exemplified in which the concave space SP11 of region RG1 in the suction stage 410 can be selectively depressurized.

[0111] 18, the substrate peeling apparatus 401 has a suction stage 410 instead of the suction stage 10 (see FIG. 1). FIG. 18 is a diagram showing a schematic configuration of the substrate peeling apparatus 401.

[0112] As shown in FIGS. 19 to 22, the suction stage 410 has a stage base 413 instead of the stage base 13 (see FIGS. 2 to 5), and further has a partition wall 417. FIG. 19 is a YZ sectional view showing the configuration of the suction stage 410. FIG. 20 is an XY plan view showing the configuration of the suction stage 410. The YZ sectional view of FIG. 19 corresponds to the YZ section taken along the line FF of FIG. 20. FIG. 21 is an enlarged YZ sectional view showing the configuration in the vicinity of the center of the suction stage 410, and corresponds to the YZ sectional view of an enlarged E portion of FIG. 19. FIG. 22 is an enlarged XY plan view showing the configuration in the vicinity of the center of the suction stage 410, and corresponds to the XY plan view of an enlarged G portion of FIG. 20.

[0113] The suction stage 410 can selectively reduce the pressure in the recessed space SP11 in the region RG1, and can make the pressure in the recessed space SP12 in the region RG2 relatively higher than the pressure in the recessed space SP11 in the region RG1. This makes it possible to make the tensile stress from the bonded body CB toward the suction stage 10 in the region RG2 smaller than the tensile stress from the bonded body CB toward the suction stage 10 in the region RG1 when the bonded body CB is suctioned. As a result, the suction force of the suction stage 10 for the bonded body CB in the region RG2 can be weaker than the suction force of the bonded body CB in the region RG1.

[0114] The stage base 413 further has a pressure adjustment hole 436 relative to the stage base 13 (see FIGS. 2 to 5). The pressure adjustment hole 436 is disposed in the main body portion 4131 in the region RG2. The pressure adjustment hole 436 can be disposed in any position in the region RG2 that does not interfere with the partition wall 417 when viewed in the XY plane.

[0115] The pressure adjustment hole 436 may extend from the recessed space SP11 through to the bottom surface 10b. The support member 14 may have holes 142 and 143 formed therein corresponding to the pressure adjustment hole 436. The hole 142 extends from the surface of the support member 14 on the +Z side in the -Z direction to near the center. The hole 143 extends from the -Z end of the hole 142 to the outer surface of the support member 14 in the XY direction. The pressure adjustment hole 436 communicates with the space (atmospheric pressure space) outside the support member 14 via the holes 142 and 143. This allows the pressure in the recessed space SP12 in the region RG2 to be approximately atmospheric pressure (e.g., 10 Pa) when the bonded body CB is adsorbed, and the pressure in the recessed space SP12 in the region RG2 to be relatively higher than the pressure in the space SP11 corresponding to the region RG1.

[0116] The number of pressure adjustment holes 436 arranged in the main body portion 4131 in the region RG2 is not limited to one as illustrated in FIGS. 18 to 22, and may be multiple.

[0117] The partition wall 417 is disposed between the recessed space SP11 of the region RG1 and the recessed space SP12 of the region RG2 on the suction stage 10. The partition wall 417 is disposed between the plurality of support pins 11 and the plurality of support pins 12. The Z height of the partition wall 417 may be equal to the Z height h11 of the support pins 11, may be equal to the Z height h12 of the support pins 12, or may be equal to the Z height of the partition wall 18. This makes it possible to spatially separate the recessed space SP11 of the region RG1 and the recessed space SP12 of the region RG2 when the bonded body CB is suctioned.

[0118] The partition wall 417 extends in an annular shape along the boundary between the region RG1 and the region RG2 in the XY plan view. The partition wall 417 surrounds the multiple support pins 12 in the XY plan view. The partition wall 417 may be substantially annular in the XY plan view. The maximum XY width (e.g., diameter in the XY plan view) L417 of the partition wall 417 may be 50 mm or less, for example, 5 to 50 mm. The XY thickness W417 of the partition wall 417 may be approximately 1 mm. This allows the recessed space SP11 of the region RG1 and the recessed space SP12 of the region RG2 to be spatially separated when the bonded body CB is adsorbed.

[0119] For example, when the bonded body CB is carried into the +Z side of the suction stage 410 by a conveying device (not shown) or the like and placed on the suction surface 10a, the controller 60 controls the vacuum device 50 to suction the bonded body CB onto the suction surface 10a. At this time, the suction stage 410 suctions the bonded body CB onto the suction surface 10a so that the recessed space SP11 in the region RG1 can be selectively depressurized (see FIG. 19). The controller 60 may rotate the suction stage 10 and the bonded body CB around the Z axis by the drive mechanism 30, while gradually relatively moving the housing 23 from an XY position on the outer periphery side of the suction surface 10a to an XY position on the center side by the drive mechanism 40. At this time, the laser light may be irradiated from the light source 21 through the optical system 22 to the bonded body CB at a predetermined cycle. When the housing 23 reaches the XY position corresponding to the region RG2, the controller 60 may control the optical system 22 to reciprocate the XY irradiation position of the laser light in the XY direction within the region RG2. This allows the light source 21 to radiate the laser light periodically along a predetermined trajectory (see FIGS. 11(a) to 11(d)) passing through the regions RG1 and RG2 in order.

[0120] As described above, in the second embodiment, in the substrate peeling device 401, the suction stage 410 can selectively reduce the pressure in the recessed space SP11 in the region RG1, and can make the pressure in the recessed space SP12 in the region RG2 relatively higher than the pressure in the recessed space SP11 in the region RG1. This makes it possible to make the tensile stress from the bonded body CB toward the suction stage 10 in the region RG2 smaller than the tensile stress from the bonded body CB toward the suction stage 10 in the region RG1 when the bonded body CB is suctioned. As a result, the suction force of the bonded body CB in the region RG2 of the suction stage 410 can be weaker than the suction force of the bonded body CB in the region RG1. This makes it possible to reduce the stress between the substrates SB1 and SB2 when the substrate peeling device 401 peels the substrates SB1 and SB2 in the region RG2, suppressing the occurrence of gouging or the like in the substrate SB, and appropriately peeling the substrates SB1 and SB2 from one to the other in the bonded body CB.

[0121] The substrate peeling apparatus 1 may be applied to a manufacturing method of a semiconductor device 300 as shown in Figures 6 to 13, 23, 24, and 16 to 17. Figure 23 is a YZ cross-sectional view showing stress relaxation in a modified example of the second embodiment. Figure 24 is an enlarged YZ cross-sectional view showing stress relaxation in a modified example of the second embodiment, and corresponds to a YZ cross-section obtained by enlarging part H in Figure 23.

[0122] The steps are performed up to step S6 shown in FIG. 6 in the same manner as in the modified example of the first embodiment. When step S6 shown in FIG. 6 is completed, a conveying device (not shown) or the like carries the bonded body CB into the +Z side of the suction stage 410 of the substrate peeling device 401 (see FIG. 18) and places it on the suction surface 10a. The substrate peeling device 401 controls the vacuum device 50 to suction the bonded body CB onto the suction surface 10a. At this time, the suction stage 10 suctions the bonded body CB onto the suction surface 10a so that the pressure of the space SP12 corresponding to the region RG2 on the suction surface 10a is higher than the pressure of the space SP11 corresponding to the region RG1 (see FIG. 19). In this state, the substrate peeling device 401 irradiates the bonded body CB with the laser light 200 from the substrate 100 side so that the focal point is located near the film 4 (S7).

[0123] In S7, similarly to the modified example of the first embodiment, irradiation with the laser light 200 from the first irradiation to the (N-1)th irradiation is performed.

[0124] Thereafter, as shown in FIG. 13(b), the substrate peeling device 401 determines the final XY plane position to be irradiated with the Nth laser beam 200-N, and adjusts the focal point of the laser beam 200-N to be located within the film 4. The final XY plane position may be the final position along a zigzag trajectory (see FIG. 11(d)). The film 4 has a higher absorption rate of the laser beam 200-N than the substrate 100. As a result, the laser beam 200-N irradiated to the film 4 through the substrate 100 is efficiently absorbed at the irradiated location within the film 4, and locally heats the film 4 at the final XY plane position.

[0125] 13(c), the localized heat generation in the film 4 is transferred to the interface between the film 4 and the substrate 100. The thermal expansion coefficient of the substrate 100 is larger than that of the film 4, and therefore, at the final XY plane position, the substrate 100 expands toward the film 4, forming a convex portion 101 where the substrate 100 protrudes toward the film 4, and the periphery of the convex portion becomes a concave portion 102. As a result, a compressive stress is generated at the interface between the tip of the convex portion 101 and the film 4, but a tensile stress is generated at the interface between the bottom surface of the concave portion 102 and the film 4, and the film 4 and the substrate 100 may be partially peeled off around the final XY plane position.

[0126] At this time, as shown in Figs. 23 and 24, the recessed space SP12 in the region RG2 of the suction stage 10 is communicated with the atmospheric pressure space through the pressure adjustment hole 436, while the recessed space SP11 in the region RG1 is evacuated through the vacuum hole 132 (see Fig. 18). That is, the suction stage 410 suctions the bonded body CB to the suction surface 10a so that the pressure in the recessed space SP12 in the region RG2 is higher than the pressure in the recessed space SP11 in the region RG1 (see Fig. 19). This allows the suction stage 410 to make the suction force of the bonded body CB in the region RG2 weaker than the suction force of the bonded body CB in the region RG1. In Figs. 23 and 24, the stress in the region RG2 is indicated by a dotted arrow, and the stress in the region RG1 is indicated by a solid arrow. The dotted arrow indicates a smaller stress than the solid arrow.

[0127] 23 and 24, in a state where the film 4 and the substrate 100 are partially connected at a portion corresponding to the region RG2, a tensile stress in the -Z direction due to suction from the suction stage 10 and a tensile stress in the +Z direction due to deformation of the substrate 100 may act on the connection portion. Among these, the tensile stress in the region RG2 on the suction surface 10a of the suction stage 10 becomes smaller than the tensile stress in the region RG1, so that the connection portion near the final XY plane position between the film 4 and the substrate 100 can be gradually peeled off. As a result, it is possible to suppress the occurrence of defects such as gouges in the final peeled portions corresponding to the region RG2 in each of the film 4 and the substrate 100.

[0128] As the partial peeling progresses gradually, peeling occurs at the interface between the film 4 and the substrate 100 (S9). That is, as shown in Fig. 16(a), the substrate 100 is peeled off from the laminate 6 in which the film 3 and the film 4 are laminated on the substrate 2.

[0129] After this, the same processing as in the modified example of the first embodiment is carried out.

[0130] In this manner, by applying the substrate peeling apparatus 401 to the manufacturing method of the semiconductor device 300 as shown in Figures 6 to 13, 23, 24, and 16 to 17, the substrate 100 in the bonded body CB can be properly peeled from the laminate 6 in which the film 3 and the film 4 are laminated on the substrate 2.

[0131] (Third embodiment) Next, a method for manufacturing the semiconductor device 300 in the third embodiment will be described. The following mainly describes the differences from the modified example of the first embodiment and the modified example of the second embodiment.

[0132] The modified examples of the first embodiment and the second embodiment exemplify a method for manufacturing the semiconductor device 300 using an adsorption stage with an improved structure, while the third embodiment exemplifies a method for manufacturing the semiconductor device 300 with improved laser light irradiation conditions.

[0133] When the substrate is laser-peeled from the bonded body CB, the energy of the laser irradiation in the region RG2 is lower than that of the region RG1. At this time, the pitch of the laser irradiation in the region RG2 may be narrower than that of the region RG1. This makes it possible to gradually peel off the connection portion near the final XY plane position at the peeling interface while suppressing a decrease in the processing capacity of the region RG2 compared to the region RG1, and to suppress the occurrence of defects such as gouging at the peeling interface.

[0134] The manufacturing method of the semiconductor device 300 may be performed using a substrate peeling apparatus 501 (not shown) as shown in Figures 6 to 10, 25, 12 to 13(a), 26, and 16 to 17. Figures 25(a) to 25(d) are XY plan views showing the manufacturing method of the semiconductor device 300 in the third embodiment. Figures 26(a) to 26(b) are YZ cross-sectional views showing the manufacturing method of the semiconductor device 300 in the third embodiment.

[0135] The substrate peeling apparatus 501 may be an apparatus modified from the substrate peeling apparatus 1 (see FIG. 1) by modifying the main surface 13a on the +Z side of the stage base 513 to be entirely flat, and by arranging support pins 11 in the region 13a2 instead of the support pins 12. In the substrate peeling apparatus 501, the chucking surface 10a is flat in both the region RG1 and the region RG2 of the chucking stage 510.

[0136] Similar to the modification of the first embodiment, steps are performed up to step S6 shown in Fig. 6. When step S6 shown in Fig. 6 is completed, the substrate peeling device 501 irradiates the bonded body CB with laser light 200 from the substrate 100 side so that the focal point is located near the film 4 (S7).

[0137] The substrate peeling device 501 irradiates the laser light 200 so that a plurality of irradiation portions are two-dimensionally distributed in the film 4, as shown in FIG. 25. The substrate peeling device 501 may irradiate the laser light 200 while changing the conditions in a plurality of stages. As shown in FIG. 25(c), the region RG1 in the adsorption stage 510 is divided into an outer region RG11 and an inner region RG12. FIGS. 25(a) to 25(d) illustrate a case in which the substrate peeling device 501 irradiates the laser light 200 while changing the conditions in three stages, region RG11 →region RG12 →region RG2. FIG. 25(d) is an XY enlarged plan view showing the region RG12 and region RG2 in FIG. 25(c) in an enlarged manner. In FIG. 25(d), the magnitude of the pulse energy of the laser light is shown by the size of the dot.

[0138] In the laser irradiation of the region RG11 shown in FIG. 25(a), the substrate peeling device 501 moves the laser module 20 from the outer periphery to the inner periphery relative to the suction stage 510 while rotating the suction stage 510 at a gradually increasing rotation speed. In this way, the substrate peeling device 501 moves the irradiation part of the laser light 200 along a spiral trajectory that gradually moves from the outer periphery to the inner periphery in the region RG11. The pulse frequency of the laser light may be a fixed value of, for example, 10 to 100 kHz. The pulse energy PE1 of the laser light may be 100 mj. The pitch PP1 of the irradiation part may be 15 μm. The radius of the irradiation part may be 12 mm or less. The rotation speed of the suction stage 510 may be adjusted to gradually increase in the range of 0.80 rotations / second to 47.8 rotations / second.

[0139] For example, the first to kth laser light irradiations are performed in the same manner as in the modified example of the first embodiment.

[0140] In the laser irradiation of the region RG12 shown in FIG. 25(b) and FIG. 25(d), the substrate peeling device 501 moves the laser module 20 gradually from the outer periphery to the inner periphery relative to the suction stage 510 while rotating the suction stage 510 at a fixed rotation speed. In this way, the substrate peeling device 501 moves the irradiation part of the laser light 200 along a spiral trajectory gradually moving from the outer periphery to the inner periphery in the region RG12. The pulse frequency of the laser light may be gradually increased, for example, in the range of 10 to 100 kHz. The pulse energy PE1 of the laser light may be 100 mj. The pitch PP2 of the irradiation part may be smaller than PP1. The radius of the irradiation part may be gradually decreased in the range of 12 mm to 2.5 mm. The rotation speed of the suction stage 10 may be fixed at 47.8 rotations / second.

[0141] For example, the (k+1)th irradiation to the jth irradiation of the laser light are performed in the same manner as in the modified example of the first embodiment.

[0142] In the laser irradiation of the region RG2 shown in FIG. 25(c) and FIG. 25(d), the substrate peeling device 501 moves the laser module 20 gradually from the outer periphery to the inner periphery relative to the suction stage 510 while rotating the suction stage 510 at a fixed rotation speed. In this way, the substrate peeling device 501 moves the irradiation part of the laser light 200 along a spiral trajectory in the region RG2. The pulse frequency of the laser light may be fixed in the range of, for example, 10 to 100 kHz. The pulse energy PE2 of the laser light may be smaller than PE1, for example, 50 mj. The pitch PP3 of the irradiation part may be smaller than PP2. The radius of the irradiation part may be gradually reduced in the range of 2.5 mm to 0.1 mm.

[0143] Although not shown, the substrate peeling device 501 determines the XY plane position to be irradiated with the j+1th irradiation laser beam 200-(j+1) immediately after reaching the region RG12 to a position shifted in the XY plane direction from the jth irradiation position, and adjusts the focus of the laser beam 200-(j+1) to be located within the film 4. As a result, the laser beam 200-(j+1) irradiated to the film 4 through the substrate 100 is efficiently absorbed at the irradiated location within the film 4, and locally generates heat (localized heating) in the film 4 at that XY plane position.

[0144] The local heat generation in the film 4 is transferred to the interface between the film 4 and the substrate 100. The thermal expansion coefficient of the substrate 100 is larger than that of the film 4, and therefore the substrate 100 expands toward the film 4 at the XY plane position, forming a convex portion 101a where the substrate 100 protrudes toward the film 4, and the periphery becomes a concave portion 102a. The XY plane dimensions of the convex portion 101a are smaller than the XY plane dimensions of the convex portions 101 in the regions RG11 and RG12. The Z height of the convex portion 101a is lower than the Z height of the convex portions 101 in the regions RG11 and RG12. The XY plane dimensions of the concave portion 102a are smaller than the XY plane dimensions of the concave portions 102 in the regions RG11 and RG12. The Z depth of the concave portion 102a is shallower than the Z depth of the concave portions 102 in the regions RG11 and RG12.

[0145] As a result, compressive stress occurs at the interface between the tip of the convex portion 101a and the film 4, but tensile stress occurs at the interface between the bottom surface of the concave portion 102a and the film 4, and the film 4 may be partially peeled off from the substrate 100 around the XY plane position. At this time, the compressive stress at the interface between the tip of the convex portion 101a and the film 4 and the tensile stress at the interface between the bottom surface of the concave portion 102a and the film 4 are smaller than when regions RG11 and RG12 are peeled off, so that the film 4 may be peeled off from the substrate 100 more slightly around the XY plane position.

[0146] 26(a), the substrate peeling device 501 determines the final XY plane position to be irradiated with the Nth laser beam 200-N, and adjusts the focal point of the laser beam 200-N to be located within the film 4. As a result, the laser beam 200-N irradiated to the film 4 through the substrate 100 is efficiently absorbed at the irradiated point within the film 4, and locally generates heat (localized heating) in the film 4 at the final XY plane position.

[0147] The local heat generation of the film 4 is transferred to the interface between the film 4 and the substrate 100 as shown in FIG. 26(b). The thermal expansion coefficient of the substrate 100 is larger than that of the film 4. Therefore, at the final XY plane position, the substrate 100 expands toward the film 4, forming a convex portion 101a where the substrate 100 protrudes toward the film 4, and the periphery becomes a concave portion 102a. The XY plane dimensions of the convex portion 101a are smaller than the XY plane dimensions of the convex portions 101 in the regions RG11 and RG12. The Z height of the convex portion 101a is lower than the Z height of the convex portions 101 in the regions RG11 and RG12. The XY plane dimensions of the concave portion 102a are smaller than the XY plane dimensions of the concave portions 102 in the regions RG11 and RG12. The Z depth of the concave portion 102a is shallower than the Z depth of the concave portions 102 in the regions RG11 and RG12.

[0148] As a result, compressive stress occurs at the interface between the tip of the convex portion 101a and the film 4, but tensile stress occurs at the interface between the bottom surface of the concave portion 102a and the film 4, and the film 4 may be partially peeled off from the substrate 100 around the final XY plane position. At this time, the compressive stress at the interface between the tip of the convex portion 101a and the film 4 and the tensile stress at the interface between the bottom surface of the concave portion 102a and the film 4 are smaller than when regions RG11 and RG12 are peeled off, so that the film 4 may be peeled off from the substrate 100 more slightly around the XY plane position.

[0149] That is, since the tensile stress of the region RG2 in the suction stage 510 becomes smaller than the tensile stress of the region RG1, it is possible to gradually peel off the connection portion in the vicinity of the final XY plane position between the film 4 and the substrate 100. As a result, it is possible to suppress the occurrence of defects such as gouges in the final peeled portions corresponding to the region RG2 in each of the film 4 and the substrate 100.

[0150] As the partial peeling progresses gradually, peeling occurs at the interface between the film 4 and the substrate 100 (S9). That is, as shown in Fig. 16(a), the substrate 100 is peeled off from the laminate 6 in which the film 3 and the film 4 are laminated on the substrate 2.

[0151] After this, the same processing as in the modified example of the first embodiment is carried out.

[0152] As described above, in the third embodiment, when the substrate is laser-peeled from the bonded body CB, the energy of the laser irradiation in the region RG2 is lower than that of the region RG1. At this time, the pitch of the laser irradiation in the region RG2 may be narrower than that of the region RG1. This makes it possible to gradually peel off the connection portion near the final XY plane position at the peeling interface while suppressing a decrease in the processing capacity of the region RG2 compared to the region RG1, and to suppress the occurrence of defects such as gouging at the peeling interface.

[0153] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims. [Explanation of symbols]

[0154] 1,401,501 Substrate peeling device, 10,410,510 Adsorption stage, 21 Light source.

Claims

1. a suction stage on which a bonded assembly of a plurality of substrates is suctioned and which includes a first region and a second region located inside the first region; a light source capable of sequentially irradiating the first region and the second region with laser light; Equipped with The adsorption stage is The adhesive force of the bonded body in the second region is weaker than the adhesive force of the bonded body in the first region. Substrate peeling device.

2. The adsorption stage is a stage base having a main surface including a flat surface disposed in the first region and a convex surface disposed in the second region and protruding from the flat surface; The substrate peeling apparatus according to claim 1 .

3. the adsorption stage has a pressure in the space corresponding to the second region higher than a pressure in the space corresponding to the first region; The substrate peeling apparatus according to claim 1 .

4. the stage base has a hole extending from the main surface to a bottom surface opposite the main surface in the first region; The substrate peeling apparatus according to claim 2 .

5. The adsorption stage is a plurality of first pins disposed on the planar surface, each pin having a first height; a plurality of second pins disposed on the convex surface, each second pin having the first height; a partition wall disposed on an outer circumferential side of the flat surface and having the first height; having The substrate peeling apparatus according to claim 4 .

6. The adsorption stage is a stage base including a main surface disposed in the first region and the second region and a hole extending from the main surface to a bottom surface on the opposite side of the main surface in the first region; a plurality of first pins disposed on the major surface in the first region, each pin having a first height; a plurality of second pins disposed on the major surface in the second region, each of the second pins having the first height; a first partition wall disposed on the main surface on an outer periphery side of the first region and having the first height; a second partition wall disposed on the main surface at a boundary between the first region and the second region and having the first height; have The substrate peeling apparatus according to claim 1 .

7. The maximum planar width of the second region is 10 mm or less. The substrate peeling apparatus according to claim 2 .

8. The maximum planar width of the second region is 50 mm or less. The substrate peeling apparatus according to claim 6 .

9. Providing a first substrate; A first film is laminated on the first substrate; A second film is laminated on a second substrate; a main surface of the first film opposite to the first substrate and a main surface of the second film opposite to the second substrate are bonded to form a bonded body; irradiating the bonded body with a laser beam from the first substrate side while the bonded body is attached to a suction stage; Peeling the first substrate from the bonded body; Prepare for this. the suction stage includes a first region and a second region located on the inner side of the first region, and an adsorption force of the bonded body in the second region is weaker than an adsorption force of the bonded body in the first region; The irradiation may include irradiating the first region with the laser light; irradiating the second region with the laser light after irradiating the first region; Includes Substrate peeling method.

10. Providing a first substrate; A first film is laminated on the first substrate; A second film is laminated on a second substrate; a main surface of the first film opposite to the first substrate and a main surface of the second film opposite to the second substrate are bonded to form a bonded body; irradiating the bonded body with a laser beam from the first substrate side while the bonded body is attached to a suction stage; Peeling the first substrate from the bonded body; Prepare for this. the suction stage includes a first region and a second region located inside the first region, The irradiation may include irradiating the laser light with a first energy toward the first region; After irradiating the first region, irradiating the second region with the laser light at a second energy level lower than the first energy level; Includes Substrate peeling method.

11. peeling the first substrate from the bonded body by the substrate peeling method according to claim 9 to obtain a laminate in which the second film and the first film are laminated on the second substrate; flattening the peeled surface of the laminate to obtain a semiconductor device; A method for manufacturing a semiconductor device comprising the steps of:

12. peeling the first substrate from the bonded body by the substrate peeling method according to claim 10 to obtain a laminate in which the second film and the first film are laminated on the second substrate; flattening the peeled surface of the laminate to obtain a semiconductor device; A method for manufacturing a semiconductor device comprising the steps of:

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