Electronic components and charged particle beam irradiation device

Abstract

To provide an electronic component capable of suppressing unintended deflection of a charged particle beam.SOLUTION: An electronic component includes a first substrate having a plurality of first through holes through which a plurality of charged particle beams pass, and an electrode pair provided in the first through hole, and including a first electrode having a first portion, a second portion connected to the first portion and having a first end, and a third portion connected to the first portion and having a second end, and a second electrode having a fourth portion opposing the first portion, a fifth portion connected to the fourth portion and having a third end opposing the first end, and a sixth portion connected to the fourth portion and having a fourth end opposing the second end, and an insulating film at least a portion of which is provided between outer side surfaces of the first electrode and the second electrode and an inner side surface of the first through hole, and the surface of the insulating film is located outward from a first surface which is an inner side surface of the second portion and a third surface which is an inner side surface of the fifth portion, and is located outward from a fifth surface which is an inner side surface of the third portion and a seventh surface which is an inner side surface of the sixth portion.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] FIELD OF THE PRESENT EMBODIMENTS The present invention relates to an electronic component and a charged particle beam irradiation device. [Background technology]

[0002] As semiconductor integrated circuits (Large Scale Integration: LSI) become increasingly miniaturized, photomasks used in the LSI manufacturing process are required to be both miniaturized to the nm order and to reduce costs. Photomasks are manufactured by drawing fine patterns on glass substrates using an electron beam (EB) exposure device. Conventional exposure devices use a single electron beam method, in which a single electron beam is used for scanning. This makes it difficult to achieve both finer pattern accuracy and high throughput. To solve this problem, a multi-electron beam exposure device (multi-electron beam drawing device) has been proposed, which draws simultaneously with multiple electron beams.

[0003] This multi-electron beam exposure device is provided with a pixel array (Blanking Aperture Array: BAA) that has minute through-holes and deflection electrodes formed around the holes. The blanking aperture array is configured so that an electron beam can be irradiated into each through-hole. The deflection electrodes generate an electric field (deflection electric field) for deflecting the electron beam. Therefore, by controlling the on / off of the electron beam passing through each through-hole using a signal given to each pixel, it is possible to generate an electron beam of any pattern. By exposing a resist to this electron beam, it is possible to form a resist pattern of any pattern.

[0004] For example, in a multi-electron beam exposure apparatus, an electron beam emitted from an electron gun is passed through a shaping aperture with multiple holes to form a multi-beam. Each of the electron beams that make up the multi-beam is blanked by a blanking aperture array. The electron beams that are not deflected by the blanking aperture array are irradiated onto a sample such as a mask blank. On the other hand, the electron beams that are deflected by the blanking aperture array are shielded (blanked). [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Patent No. 3145149 specification Summary of the Invention [Problem to be solved by the invention]

[0006] An object of the present invention is to provide an electronic component and a charged particle beam irradiation device capable of suppressing unintended deflection of a charged particle beam. [Means for solving the problem]

[0007] The electronic component of the embodiment includes a first substrate having a first substrate surface and a second substrate surface provided on the opposite side of the first substrate surface, the first substrate surface having a plurality of first through holes through which a plurality of charged particle beams pass, and a first electrode provided in each of the first through holes, the first electrode having a first portion, a second portion connected to the first portion and having a first end, and a third portion connected to the first portion and having a second end, the first electrode being provided so as to face the first electrode at a distance from the first electrode, the fourth portion facing the first portion, a fifth portion connected to the fourth portion and having a third end facing the first end, and a sixth portion connected to the fourth portion and having a fourth end facing the second end. and a second electrode disposed between the first electrode and the second electrode and an insulating film, at least a portion of which is provided between the outer side surfaces of the first electrode and the second electrode and the inner side surface of the first through hole, in each of a plurality of first through holes, wherein a surface of the insulating film in the first through hole exposed from the first electrode and the second electrode near the first end and the third end is located outside a first surface which is the inner side surface of the second portion and a third surface which is the inner side surface of the fifth portion, and a surface of the insulating film in the first through hole exposed from the first electrode and the second electrode near the second end and the fourth end is located outside a fifth surface which is the inner side surface of the third portion and a seventh surface which is the inner side surface of the sixth portion. [Brief description of the drawings]

[0008] [Figure 1] 1 is a schematic cross-sectional view of an electron beam drawing apparatus according to a first embodiment. [Diagram 2] 1 is a schematic cross-sectional view of a main part of an electronic component according to a first embodiment. [Diagram 3] 1 is a schematic cross-sectional view of a main part of an electronic component according to a first embodiment. [Figure 4] 4 is a schematic cross-sectional view of a main part of an electronic component in a first alternative mode of the electronic component of the first embodiment. FIG. [Diagram 5] 4 is a schematic cross-sectional view of a main part of an electronic component according to a second alternative aspect of the electronic component of the first embodiment. FIG. [Figure 6] 2A to 2C are schematic cross-sectional views illustrating a method for manufacturing the electronic component of the first embodiment. [Figure 7] 2A to 2C are schematic cross-sectional views illustrating a method for manufacturing the electronic component of the first embodiment. [Figure 8] 2A to 2C are schematic cross-sectional views illustrating a method for manufacturing the electronic component of the first embodiment. [Figure 9] 2A to 2C are schematic cross-sectional views illustrating a method for manufacturing the electronic component of the first embodiment. [Figure 10] FIG. 4 is a schematic cross-sectional view of a main part of an electronic component that is a comparative example of the first embodiment. [Figure 11] FIG. 6 is a schematic cross-sectional view of a main part of an electronic component according to a second embodiment. [Figure 12] FIG. 11 is a schematic cross-sectional view of a main part of an electronic component according to a third embodiment. [Figure 13] FIG. 13 is a schematic cross-sectional view of a main part of an electronic component according to a fourth embodiment. [Figure 14] FIG. 13 is a schematic cross-sectional view of a main part of an electronic component according to a fifth embodiment. [Figure 15] FIG. 13 is a schematic cross-sectional view of a main part of an electronic component according to a sixth embodiment. [Figure 16] FIG. 13 is a schematic cross-sectional view of a main part of an electronic component according to a seventh embodiment. [Figure 17] 4 shows a potential distribution of the electronic component according to the embodiment. [Figure 18] 4 is a graph showing an electric field of the electronic component according to the embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, an embodiment will be described with reference to the drawings. In the drawings, the same or similar parts are denoted by the same or similar reference numerals.

[0010] In this specification, the same or similar components are denoted by the same reference numerals, and duplicate descriptions may be omitted.

[0011] In this specification, in order to indicate the positional relationship of parts, etc., the upward direction of the drawing is described as "upper" and the downward direction of the drawing is described as "lower." In this specification, the concepts of "upper" and "lower" are not necessarily terms that indicate a relationship with the direction of gravity.

[0012] Hereinafter, a configuration using an electron beam (electron beam) will be described as an example of a charged particle beam (charged particle beam). However, the charged particle beam is not limited to an electron beam. The charged particle beam may be an ion beam.

[0013] (First embodiment) The electronic component of the present embodiment includes a first substrate having a first substrate surface and a second substrate surface provided on the opposite side of the first substrate surface, the first substrate surface having a plurality of first through holes through which a plurality of charged particle beams pass, and a first electrode having a first portion, a second portion connected to the first portion and having a first end, and a third portion connected to the first portion and having a second end, each of which is provided in the plurality of first through holes, and a fourth portion provided to face the first electrode at a distance from the first electrode, the fourth portion facing the first portion, a fifth portion having a third end connected to the fourth portion and facing the first end, and a fourth end connected to the fourth portion and facing the second end. the insulating film in the first through hole, at least a portion of which is provided between the outer side surfaces of the first and second electrodes and the inner side surface of the first through hole in each of a plurality of first through holes, wherein the surface of the insulating film in the first through hole exposed from the first and second electrodes in the vicinity of the first end and the third end is located outward from the first face which is the inner side surface of the second portion and the third face which is the inner side surface of the fifth portion, and the surface of the insulating film in the first through hole exposed from the first and second electrodes in the vicinity of the second end and the fourth end is located outward from the fifth face which is the inner side surface of the third portion and the seventh face which is the inner side surface of the sixth portion.

[0014] FIG. 1 is a schematic cross-sectional view of an electron beam drawing apparatus 190 of this embodiment.

[0015] The electronic component 100 of this embodiment is used, for example, as a blanking aperture array (deflector) of an electron beam drawing device 190. However, the use of the electronic component 100 is not limited to this.

[0016] The electron beam lithography device 190 includes an electron lens barrel 192 (multi-electron beam column) and a lithography chamber 193. In the electron lens barrel 192, an electron gun 201, an illumination lens 202, a shaping aperture array 203, the electronic components 100, a reduction lens 205, a limiting aperture member 206, an objective lens 207, a main deflector 208, and a sub-deflector 209 are arranged.

[0017] The electron gun 201 emits an electron beam 200. The electron gun 201 is an example of an irradiation source.

[0018] Here, an X direction, a Y direction perpendicular to the X direction, and a Z direction perpendicular to the X direction and the Y direction are defined. An electron gun 201 emits an electron beam 200 in the direction opposite to the Z direction. Also, a sample 191 is disposed parallel to the XY plane.

[0019] An electron beam 200 emitted from an electron gun 201 illuminates a shaping aperture array 203 almost perpendicularly by an illumination lens 202. A multi-beam 199 is formed by the electron beam 200 passing through an opening of the shaping aperture array 203. The multi-beam 199 includes electron beams 197a, 197b, 197c, 197d, 197e, and 197f. The shape of each electron beam 197 reflects the shape of the opening of the shaping aperture array 203. The shape of each electron beam 197 is, for example, rectangular. Here, the number of openings 204 of the shaping aperture array 203 illustrated in FIG. 1 is six. However, the number of openings 204 of the shaping aperture array 203 is not limited to six. The number of multi-beams 199 formed by the shaping aperture array 203 illustrated in FIG. 1 is six. However, the number of multi-beams 109 formed by shaping aperture array 203 is not limited to six.

[0020] The electronic component 100 is provided under the shaping aperture array 203. The position of the electron beam 197 deflected by the electronic component 100 is shifted from the central hole of the limiting aperture member 206. The electron beam 197 deflected by the electronic component 100 is blocked by the limiting aperture member 206. On the other hand, the electron beam 197 not deflected by the electronic component 100 passes through the central hole of the limiting aperture member 206. In this manner, the electron beam is controlled to be turned on and off. Here, the number of the openings 198 of the electronic component 100 illustrated in FIG. 1 is six. However, the number of the openings 198 of the electronic component 100 is not limited to six.

[0021] The focus of the electron beam 197 that has passed through the limiting aperture member 206 is appropriately adjusted by the objective lens 207. After that, the electron beam 197 that has passed through the limiting aperture member 206 becomes a pattern image with a desired reduction ratio. After that, the electron beam 197 that has passed through the limiting aperture member 206 is deflected collectively by a main deflector 208 and a sub-deflector 209. After that, the electron beam 197 that has passed through the limiting aperture member 206 is irradiated onto each irradiation position on the sample 101 placed on the XY stage 105. Note that a mirror 210 for measuring the position of the XY stage 105 is arranged on the XY stage 105.

[0022] FIG. 2 is a schematic cross-sectional view of a main part of the electronic component 100 of this embodiment. The electronic component 100 has a structure A1_2u. FIG. 3 is a schematic cross-sectional view of the electronic component 100 of this embodiment in the XZ plane. FIG. 2(a) is a schematic cross-sectional view of a main part of the electronic component 100 of this embodiment in the A-A' cross section shown in FIG. 3. FIG. 2(b) is a schematic diagram showing an example of the first portion 10, the second portion 30, the third portion 32, the first connecting portion 12, the second connecting portion 14, the fourth portion 20, the fifth portion 34, the sixth portion 36, the third connecting portion 22, and the fourth connecting portion 24.

[0023] The electronic component 100 of this embodiment will be described with reference to FIG. 2 and FIG.

[0024] The first substrate 2 is, for example, a semiconductor substrate. The first substrate 2 is, for example, a Si (silicon) substrate. However, the first substrate 2 is not limited to a semiconductor substrate. For example, other substrates such as an insulating substrate can also be preferably used as the first substrate 2. Here, the insulating substrate is, for example, a ceramic substrate. Also, the insulating substrate is, for example, a glass epoxy substrate containing glass fiber and epoxy resin.

[0025] The first substrate 2 has a first substrate surface 6 and a second substrate surface 8 provided on the opposite side of the first substrate surface 6. In Fig. 3, the first substrate surface 6 is illustrated as being disposed below the second substrate surface 8. The first substrate surface 6 and the second substrate surface 8 are disposed parallel to the XY plane.

[0026] The first substrate 2 has a plurality of first through-holes 80. Each of the electron beams 197 included in the multi-beam 199 passes through each of the plurality of first through-holes 80. Note that an electron beam passing region R through which the electron beam 197 passes is also shown in FIG.

[0027] 2, the shape of the multiple first through holes 80 in a plane parallel to the XY plane is a square. However, the shape of the multiple first through holes 80 in a plane parallel to the XY plane is not limited to a square.

[0028] The multiple first electrodes 92 are provided in the multiple first through holes 80, respectively. The first electrode 92 has a first portion 10, a second portion 30, and a third portion 32.

[0029] The second electrodes 94 are provided respectively in the first through holes 80. The second electrode 94 has a fourth portion 20, a fifth portion and a sixth portion .

[0030] The multiple electrode pairs 96 are provided in the multiple first through-holes 80, respectively. Each electrode pair 96 has a first electrode 92 and a second electrode 94 provided in the first through-hole 80 so as to face the first electrode 92 and be spaced apart from each other.

[0031] The multiple first portions 10 are provided in the multiple first through holes 80, respectively. The first portions 10 have a first connection portion 12 and a second connection portion 14. The first portions 10 extend in the Y direction. The first portions 10 are provided parallel to the Y direction. When viewed from above, the shapes of the multiple first portions 10 are, for example, rectangular. The Y direction is an example of the first direction. As shown in FIG. 2(b), the first connection portion 12 and the second connection portion 14 are, for example, surfaces of the first portion 10 parallel to the XZ plane.

[0032] The fourth portions 20 are provided in the first through holes 80, respectively. The fourth portions 20 face the first portions 10, respectively. The fourth portions 20 have a third connection portion 22 facing the first connection portion 12 and a fourth connection portion 24 facing the second connection portion 14. The fourth portions 20 each extend in the Y direction. The fourth portions 20 are each provided parallel to the Y direction. When viewed from above, the fourth portions 20 each have a rectangular shape, for example. As shown in FIG. 2(b), the third connection portion 22 and the fourth connection portion 24 are, for example, surfaces of the fourth portion 20 parallel to the XZ plane.

[0033] The second portions 30 are provided in the first through holes 80, respectively. The second portions 30 are connected to the first connection portion 12. The second portions 30 have a first end portion 31 extending toward the third connection portion 22. The second portions 30 extend in the X direction. The second portions 30 are each provided parallel to the X direction. When viewed from above, the second portions 30 each have, for example, a rectangular shape. The X direction is an example of the second direction.

[0034] The multiple third portions 32 are provided in the multiple first through holes 80, respectively. The third portions 32 are connected to the second connection portion 14. The third portions 32 have a second end portion 33 extending toward the fourth connection portion 24. The third portions 32 extend in the X direction. The third portions 32 are each provided parallel to the X direction. When viewed from above, the multiple third portions 32 each have, for example, a rectangular shape.

[0035] The plurality of fifth portions 34 are provided in the plurality of first through holes 80, respectively. The fifth portion 34 is connected to the third connection portion 22. The fifth portion 34 extends toward the first connection portion 12 or the first end portion 31, and has a third end portion 35 provided spaced apart from the first end portion 31. The fifth portion 34 extends in the -X direction. The fifth portion 34 is provided parallel to the X direction. When viewed from above, the shape of each of the plurality of fifth portions 34 is, for example, rectangular.

[0036] The sixth portions 36 are provided in the first through holes 80, respectively. The sixth portions 36 are connected to the fourth connection portion 24. The sixth portions 36 extend toward the second connection portion 14 or the second end portion 33, and have a fourth end portion 37 spaced apart from the second end portion 33. The sixth portions 36 extend in the -X direction. The sixth portions 36 are provided parallel to the X direction. When viewed from above, the sixth portions 36 are each, for example, rectangular in shape.

[0037] As described above, the third end 35 is provided opposite to the first end 31 and spaced apart from the first end 31. Therefore, in the vicinity of the first end 31 and the third end 35, the first side surface 2a of the first through hole 80 is exposed.

[0038] As described above, the fourth end 37 is provided opposite the second end 33 and spaced apart from the second end 33. Therefore, in the vicinity of the second end 33 and the fourth end 37, the second side surface 2b of the first through hole 80 is exposed.

[0039] The first insulating films 40 are provided between the outer side surface of the first electrode 92 and the inner side surface of the first through hole 80 in each of the first through holes 80. In other words, the first insulating films 40 are provided between the first portion 10, the second portion 30, and the third portion 32 and the first substrate 2 in each of the first through holes 80. Furthermore, the first insulating films 40 are provided in contact with the first substrate surface 6. Note that the seventh distance d7 of the first insulating film 40 in the Y direction near the second portion 30 and the second end 33 is longer than the second distance d2 of the second portion 30 and the third portion 32 in the Y direction. Also, the eighth distance d8 of the first insulating film 40 in the Y direction near the third portion 32 and the first end 31 is longer than the second distance d2 in the Y direction. Furthermore, the seventh distance d7 is preferably equal to or greater than the sum of the second distance d2 and the film thickness t4 of the third portion 32 in the Y direction (d7≧d2+t4). Furthermore, the eighth distance d8 is preferably equal to or greater than the sum of the second distance d2 and the film thickness t3 of the second portion 30 in the Y direction (d8≧d2+t3). The multiple first insulating films 40 include, for example, SiOx (silicon oxide).

[0040] A side surface 40a1 of the first insulating film 40 is exposed in the vicinity of the first end portion 31. Moreover, a side surface 40b1 of the first insulating film 40 is exposed in the vicinity of the second end portion 33.

[0041] The second insulating films 42 are provided in each of the first through holes 80 between the outer side surface of the second electrode 94 and the inner side surface of the first through hole 80, and are spaced apart from the first insulating film 40. In other words, the second insulating films 42 are provided in each of the first through holes 80 between the fourth portion 20, the fifth portion 34, and the sixth portion 36 and the first substrate 2. The second insulating films 42 are provided in each of the first through holes 80, and are spaced apart from the first insulating films 40. Furthermore, the second insulating films 42 are provided in contact with the first substrate surface 6. Note that the ninth distance d9 of the second insulating film 42 in the Y direction near the fifth portion 34 and the fourth end 37 is longer than the fifth distance d5 in the Y direction between the fifth portion 34 and the sixth portion 36. Moreover, a tenth distance d10 in the Y direction between the sixth portion 36 and the second insulating film 42 near the third end 35 is longer than the fifth distance d5 in the Y direction. Furthermore, the ninth distance d9 is preferably equal to or greater than the sum of the fifth distance d5 and the film thickness t6 of the sixth portion 36 in the Y direction (d9≧d5+t6). Furthermore, the tenth distance d10 is preferably equal to or greater than the sum of the fifth distance d5 and the film thickness t5 of the fifth portion 34 in the Y direction (d10≧d5+t5). The multiple second insulating films 42 include, for example, SiOx (silicon oxide).

[0042] A side surface 42a1 of the second insulating film 42 is exposed in the vicinity of the third end portion 35. Moreover, a side surface 42b2 of the second insulating film 42 is exposed in the vicinity of the fourth end portion 37.

[0043] However, the shapes of the plurality of first insulating films 40 and the plurality of second insulating films 42 are not limited to those described above.

[0044] The first distance d1 in the Y direction between the first side 2a of the first through hole 80 exposed near the first end 31 and the third end 35 and the third portion 32 is greater than or equal to the second distance d2 in the Y direction between the second portion 30 and the third portion 32.

[0045] The third distance d3 in the Y direction between the second side 2b of the first through hole 80 exposed near the second end 33 and the fourth end 37 and the second portion 30 is greater than or equal to the second distance d2 in the Y direction between the second portion 30 and the third portion 32.

[0046] A fourth distance d4 in the Y direction between the first side 2a of the first through hole 80 exposed near the first end 31 and the third end 35 and the sixth portion 36 is greater than or equal to the fifth distance d5 in the Y direction between the fifth portion 34 and the sixth portion 36.

[0047] A sixth distance d6 in the Y direction between the second side 2b of the first through hole 80 exposed near the second end 33 and the fourth end 37 and the fifth portion 34 is greater than or equal to the fourth distance d4 in the Y direction between the fifth portion 34 and the sixth portion 36.

[0048] In other words, the first side surface 2a of the first through hole 80 exposed near the first end 31 and the third end 35 is located outside the first surface 30a which is the inner side surface of the second portion 30 and the third surface 34a which is the inner side surface of the fifth portion 34. In other words, the second side surface 2b of the first through hole 80 exposed near the second end 33 and the fourth end 37 is located outside the fifth surface 32a which is the inner side surface of the third portion 32 and the seventh surface 36a which is the inner side surface of the sixth portion.

[0049] In FIG. 2, d1=d4, d2=d5, and d3=d6.

[0050] The circuit board (an example of a second board) 58 has a third board surface 60 and a fourth board surface 62. The third board surface 60 is provided opposite to the first board surface 6. The circuit board 58 is, for example, a silicon board. However, the circuit board 58 is not limited to a silicon board. The circuit board 58 has a plurality of second through holes 90.

[0051] The pairs of the first through holes 80 and the second through holes 90 correspond to the openings 198 (FIG. 1). Each of the first through holes 80 is provided above each of the second through holes 90.

[0052] 2 and 3, one of the first through holes 80 of the first substrate 2 is shown. Also, one of the second through holes 90 of the second substrate 58 is shown.

[0053] The insulating film 64 is provided on the third substrate surface 60 of the circuit board 58. The insulating film 64 includes, for example, silicon oxide. However, the insulating film 64 may be, for example, a laminated film of a film including silicon oxide and a film including SiNx (silicon nitride).

[0054] The multiple first plate electrodes 44 are provided under the first portion 10 and under the first insulating film 40 in contact with the first portion 10. The multiple first plate electrodes 44 are electrically connected to the first portion 10.

[0055] The multiple first bonding electrodes 50 are provided below the multiple first plate electrodes 44, respectively. The multiple first bonding electrodes 50 are electrically connected to the multiple first plate electrodes 44, respectively. The multiple first bonding electrodes 50 are provided on the first substrate surface 6 with the first insulating film 40 interposed therebetween.

[0056] The multiple second plate electrodes 46 are provided under the fourth portion 20 and under the second insulating film 42 in contact with the fourth portion 20. The multiple second plate electrodes 46 are electrically connected to the fourth portion 20.

[0057] The plurality of second bonding electrodes 52 are provided below the plurality of second plate electrodes 46, respectively. The plurality of second bonding electrodes 52 are electrically connected to the plurality of second plate electrodes 46, respectively. The plurality of second bonding electrodes 52 are provided on the first substrate surface 6 with the second insulating film 42 interposed therebetween.

[0058] The multiple third bonding electrodes 54 are provided below the multiple first bonding electrodes 50, respectively. The multiple third bonding electrodes 54 are electrically connected to the multiple first bonding electrodes 50, respectively. The multiple third bonding electrodes 54 are provided on the third substrate surface 60 with insulating films 64 interposed therebetween.

[0059] The plurality of fourth bonding electrodes 56 are respectively provided below the plurality of second bonding electrodes 52. The plurality of fourth bonding electrodes 56 are respectively electrically connected to the plurality of second bonding electrodes 52. The plurality of fourth bonding electrodes 56 are respectively provided on the third substrate surface 60 with insulating films 64 interposed therebetween.

[0060] The Z-direction length of the multiple first bonding electrodes 50, the Z-direction length of the multiple second bonding electrodes 52, the Z-direction length of the multiple third bonding electrodes 54, and the Z-direction length of the multiple fourth bonding electrodes 56 are, for example, approximately 2 μm.

[0061] In the vicinity of the second substrate surface 8, the side surface of the plurality of first through holes 80 may have an exposed portion (a portion where a part of the first substrate 2 is exposed) 82. Note that the side surface of the plurality of first through holes 80 does not necessarily have to have the exposed portion 82.

[0062] The first substrate 2 has a plurality of recesses 4. Each recess 4 is provided on a side surface of the first through hole 80 between the first insulating film 40 and the second substrate surface 8 so as to surround the first through hole 80. When the side surface of the plurality of first through holes 80 has an exposed portion 82 in the vicinity of the second substrate surface 8, the recess 4 is provided on a side surface of the first through hole 80 between the first insulating film 40 and the exposed portion 82 so as to surround the first through hole 80. Note that a plurality of recesses 4 does not necessarily have to be provided.

[0063] The multiple control circuits 68 are provided in the insulating film 64 below the first portions 10. The control circuits 68 are, for example, complementary metal-oxide-semiconductor (CMOS) circuits. The control circuits 68 have a function of applying a predetermined voltage, for example, about 5 V, to each of the multiple first portions 10 via the wiring 66, the third bonding electrode 54, the first bonding electrode 50, and the first plate electrode 44 provided in the insulating film 64.

[0064] The wiring 70 is provided in the insulating film 64. The wiring 70 is connected to the fourth bonding electrode 56. The wiring 70 grounds the fourth portion 20 via the second plate electrode 46, the second bonding electrode 52, and the fourth bonding electrode 56.

[0065] It should be noted that the first substrate 2 and the circuit substrate 58 may be grounded.

[0066] The plurality of first portions 10, the plurality of fourth portions 20, the plurality of second portions 30, the plurality of third portions 32, the plurality of fifth portions 34 and the plurality of sixth portions 36 include, for example, a metal nitride such as TiN (titanium nitride) or a metal such as W (tungsten).

[0067] The multiple first plate electrodes 44, the multiple second plate electrodes 46, the multiple first bonding electrodes 50, the multiple second bonding electrodes 52, the multiple third bonding electrodes 54, the multiple fourth bonding electrodes 56, the wiring 66 and the wiring 70 include a metal such as Au (gold) or TiN (titanium nitride).

[0068] A barrier metal (not shown) may be provided between the first portion 10, the second portion 30, and the third portion 32 and the first insulating film 40. A barrier metal (not shown) may be provided between the fourth portion 20, the fifth portion 34, and the sixth portion 36 and the second insulating film 42. The barrier metal includes, for example, TiN.

[0069] 4 is a schematic top view of a main part of electronic component 100a according to another aspect of the present embodiment. When viewed from above, first through hole 80 may have, for example, an octagonal shape.

[0070] 5 is a schematic top view of a main part of electronic component 100b according to another aspect of the present embodiment. When viewed from above, first through hole 80 may have, for example, a quadrangle with chamfered corners (R chamfered).

[0071] Also, in the electronic component 100a and the electronic component 100b, a first connection electrode 37a connecting the first connection portion 12 and the second portion 30, a second connection electrode 37b connecting the second connection portion 14 and the third portion 32, a third connection electrode 37c connecting the third connection portion 22 and the fifth portion 34, and a fourth connection electrode 37d connecting the fourth connection portion 24 and the sixth portion 36 may be provided. In this case, the first insulating film 40 is provided between the first portion 10, the second portion 30, the third portion 32, the first connection electrode 37a, the second connection electrode 37b, and the first substrate 2. Also, the second insulating film 42 is provided between the fourth portion 20, the fifth portion 34, the sixth portion 36, the third connection electrode 37c, and the fourth connection electrode 37d, and the first substrate 2.

[0072] 6 to 9 are schematic cross-sectional views showing a method for manufacturing the electronic component 100 of this embodiment.

[0073] First, a U-shaped groove 162 is formed on the first substrate surface 6 of the first substrate 2 by, for example, photolithography and RIE (Reactive Ion Etching). The width of the groove 162 is, for example, 2 μm or more and 6 μm or less. The depth of the groove 162 is, for example, about 60 μm (FIG. 6). Note that groove 162a and groove 162b are illustrated in FIG. 4.

[0074] Next, an insulating film 164 containing, for example, silicon oxide is formed inside the groove 162a, inside the groove 162b, and on the first substrate surface 6 by a CVD (Chemical Vapor Deposition) method using, for example, tetraethyl orthosilicate (TEOS) as a raw material gas. Next, a barrier metal 98 containing a metal nitride such as TiN (titanium nitride) is formed on the insulating film 164 formed in the groove 162a and the groove 162b by, for example, sputtering. Next, a first portion 10 and a fourth portion 20 containing a metal nitride such as TiN (titanium nitride) or a metal such as W (tungsten) are formed on the barrier metal 98 by, for example, a CVD method. Thereafter, the upper surfaces of the insulating film 164, the barrier metal 98, the first portion 10, and the fourth portion 20 are planarized by, for example, etch-back (FIG. 7).

[0075] Next, a first plate electrode 44 containing, for example, TiN is formed over the first portion 10 and over the insulating film 104 at the upper left of the first portion 10. Furthermore, a second plate electrode 46 containing, for example, TiN is formed over the fourth portion 20 and over the insulating film 104 at the upper right of the fourth portion 20. Note that the first plate electrode 44 and the second plate electrode 46 are formed by, for example, plating and photolithography.

[0076] Next, a first bonding electrode 50 containing, for example, gold is formed on the first plate electrode 44. Also, a second bonding electrode 52 containing, for example, gold is formed on the second plate electrode 46. Note that, for example, plating and photolithography are used to form the first bonding electrode 50 and the second bonding electrode 52 (FIG. 8).

[0077] Next, for example, the surface of the first substrate 2 opposite to the first substrate surface 6 is polished. This thins the first substrate 2. On the surface of the first substrate 2 opposite to the first substrate surface 6, a second substrate surface 8 is formed.

[0078] Next, the first substrate 2 between the first portion 10 and the fourth portion 20 is removed by, for example, the RIE method to form a first through hole 80. A first side surface 2a and a second side surface 2b are formed on the side surface of the first through hole 80. Next, the insulating film 164 provided on the right side surface and below the first portion 10 and the insulating film 164 provided on the left side surface and below the fourth portion 20 are removed by, for example, Vapor HF (vaporous hydrofluoric acid). By removing the insulating film 164, the first insulating film 40 and the second insulating film 42 are formed. In addition, the removal of the first insulating film 40 by Vapor HF is performed isotropically. Therefore, a recess 4 surrounding the first through hole 80 is formed on the side surface of the first through hole 80 under the first insulating film 40 (FIG. 9).

[0079] Next, the third bonding electrode 54 of the circuit board 58 having the second through-hole 90, the insulating film 64, the wiring 66, the control circuit 68, the wiring 70, the third bonding electrode 54, and the fourth bonding electrode 56 is bonded to the first bonding electrode 50. Also, the fourth bonding electrode 56 is bonded to the second bonding electrode 52. In this manner, the electronic component 100 of the present embodiment is obtained.

[0080] Next, the effects of the electronic component 100 of this embodiment will be described.

[0081] From the viewpoint of improving the deflection of electrons, the size of the electrode provided near the first through hole 80 is preferably long in the electron passing direction (parallel to the Z direction). On the other hand, when the electronic component is used as a blanking aperture array, from the viewpoint of improving the definition of the blanking aperture array, the size of the electrode in a plane parallel to the XY plane is preferably small. That is, the shape of the electrode provided near the first through hole 80 is preferably one with a high aspect ratio. Here, the aspect ratio is calculated by dividing the length in the direction parallel to the Z direction by the length in the direction parallel to the X direction or the Y direction. When the interval (array pitch) of the first through holes 80 in the X direction and the Y direction is 24 μm, the length of the electrode in the Z direction (height of the electrode) is preferably, for example, 25 μm or more and 30 μm or less, while the length of the electrode in the X direction is 4 μm and the length of the electrode in the Y direction is 6 μm.

[0082] However, it is difficult to form such electrodes with a fine pitch. For example, this electrode can be formed by forming a thick-film resist pattern, forming a metal film between the resist patterns using electroplating, and then peeling off the resist pattern. However, in order to form such electrodes with a fine pitch, it is required that the thick-film resist pattern is also formed with approximately the same level of aspect and pitch. However, it is difficult to form such a thick-film resist pattern. In addition, when depositing electrodes between resist patterns by electroplating, there is a problem that the in-plane film thickness unevenness is large.

[0083] Therefore, it is conceivable to join a circuit board 58 having a control circuit 68, a second through hole 90, and metal bumps (the third bonding electrode 54 and the fourth bonding electrode 56) on its surface to a first substrate 2 having a first through hole 80 by heating and pressing the metal bump portion. This makes it possible to obtain an electrode with a high aspect ratio.

[0084] However, there may be a surface where an insulating film is exposed inside the first through-hole 80. If the surface of such an insulating film becomes charged, a problem occurs in that an electric field caused by the charging deflects the trajectory of the electron beam in a direction different from the intended direction. Examples of such insulating films include a natural oxide film formed on the side surface of the first insulating film 40 or the second insulating film 42, or on the surface of exposed Si. Any of these insulating films may be formed on the wall surface of the first through-hole 80.

[0085] FIG. 10 is a schematic cross-sectional view of a main part of an electronic component 1000, which is a comparative embodiment of this embodiment. The electronic component 1000 has a structure A0. In the electronic component 1000, the first insulating film 40 is provided between the first end 31 and the third end 35 and between the second end 33 and the fourth end 37. The second insulating film 42 is provided between the first end 31 and the third end 35 and between the second end 33 and the fourth end 37. In this case, an electric field is likely to be applied inside the first through hole 80. Also, the electron beam is likely to be deflected. Therefore, there has been a demand for a structure that can shield or reduce the electric field caused by charging.

[0086] Therefore, in the electronic component of this embodiment, the first side surface 2a of the first through hole 80 exposed near the first end 31 and the third end 35 is located outside the first surface 30a, which is the inner side surface of the second portion 30, and the third surface 34a, which is the inner side surface of the fifth portion 34. Also, the second side surface 2b of the first through hole 80 exposed near the second end 33 and the fourth end 37 is located outside the fifth surface 32a, which is the inner side surface of the third portion 32, and the seventh surface 36a, which is the inner side surface of the sixth portion. The seventh distance d7 of the first insulating film 40 near the second portion 30 and the second end 33 in the Y direction is longer than the second distance d2 of the second portion 30 and the third portion 32 in the Y direction. Also, the eighth distance d8 of the first insulating film 40 near the third portion 32 and the first end 31 in the Y direction is longer than the second distance d2 in the Y direction. A ninth distance d9 in the Y direction of the second insulating film 42 in the vicinity of the fifth portion 34 and the fourth end 37 is longer than a fifth distance d5 in the Y direction of the fifth portion 34 and the sixth portion 36. In addition, a tenth distance d10 in the Y direction of the second insulating film 42 in the vicinity of the sixth portion 36 and the third end 35 is longer than the fifth distance d5 in the Y direction.

[0087] By arranging the first insulating film 40, the second insulating film 42, the first end 31, the third end 35, the second end 33 and the fourth end 37 in this manner, it is possible to increase the distance between the side surface 40a1 or 40b1 of the first insulating film 40, or the side surface 42a1 or 42b2 of the second insulating film 42, and the electron beam passing region R. As a result, even if the side surface 40a1 or 40b1 of the first insulating film 40, or the side surface 42a1 or 42b2 of the second insulating film 42 is charged, unintended deflection of the charged particle beam can be suppressed.

[0088] Moreover, a first distance d1 in the Y direction between the first side surface 2a and the third portion 32 of the first through hole 80 exposed near the first end 31 and the third end 35 is equal to or greater than the second distance d2 in the Y direction between the second portion 30 and the third portion 32. Moreover, a third distance d3 in the Y direction between the second side surface 2b and the second portion 30 of the first through hole 80 exposed near the second end 33 and the fourth end 37 is equal to or greater than the second distance d2 in the first direction.

[0089] Furthermore, a fourth distance d4 between the first side surface 2a of the first through hole 80 exposed near the first end 31 and the third end 35 and the sixth portion 36 in the Y direction is equal to or greater than a fifth distance d5 between the fifth portion 34 and the sixth portion 36 in the Y direction. Also, a sixth distance d6 between the second side surface 2b of the first through hole 80 exposed near the second end 33 and the fourth end 37 and the fifth portion 34 in the Y direction is equal to or greater than the fifth distance d5 between the fifth portion 34 and the sixth portion 36 in the Y direction.

[0090] By arranging the first side surface 2a, the second side surface 2b, the first end portion 31, the third end portion 35, the second end portion 33, and the fourth end portion 37 in this manner, even if the first side surface 2a and the second side surface 2b are charged, the distance to the electron beam passing region R can be increased. Therefore, unintended deflection of the charged particle beam can be suppressed. From this viewpoint, it is further preferable that the seventh distance d7 is equal to or greater than the sum of the second distance d2 and the film thickness t4 of the third portion 32 in the Y direction. Furthermore, it is further preferable that the eighth distance d8 is equal to or greater than the sum of the second distance d2 and the film thickness t3 of the second portion 30 in the Y direction. Furthermore, it is further preferable that the ninth distance d9 is equal to or greater than the sum of the fifth distance d5 and the film thickness t6 of the sixth portion 36 in the Y direction. Furthermore, it is further preferable that the tenth distance d10 is equal to or greater than the sum of the fifth distance d5 and the film thickness t5 of the fifth portion 34 in the Y direction.

[0091] According to the electronic component and the charged particle beam irradiation device of the present embodiment, it is possible to provide an electronic component and a charged particle beam irradiation device capable of suppressing unintended deflection of the charged particle beam.

[0092] Second embodiment The electronic component of this embodiment differs from the electronic component of the first embodiment in that the first side surface 2a of the first through hole 80 of the first substrate 2 in the vicinity of the first end 31 and the third end 35 protrudes in the -Y direction further than the first insulating film 40 and the second insulating film 42. The electronic component of this embodiment also differs from the electronic component of the first embodiment in that the second side surface 2b of the first substrate 2 in the vicinity of the second end 33 and the fourth end 37 protrudes in the Y direction further than the first insulating film 40 and the second insulating film 42. Here, description of the contents that overlap with the first embodiment will be omitted.

[0093] 11 is a schematic cross-sectional view of an electronic component 110 (structure A2) of this embodiment. The first side surface 2a of the first substrate 2 in the vicinity of the first end 31 and the third end 35 has a first convex portion 2c, and thus protrudes in the -Y direction further than the first insulating film 40 and the second insulating film 42. In addition, the second side surface 2b of the first substrate 2 in the vicinity of the second end 33 and the fourth end 37 has a second convex portion 2d, and thus protrudes in the Y direction further than the first insulating film 40 and the second insulating film 42.

[0094] When the first substrate 2 is a Si substrate, a natural oxide film of Si (not shown) may be formed on the first side surface 2a or the second side surface 2b. Here, the thickness of the natural oxide film of Si is very small, about several nm. Therefore, the capacitance of the natural oxide film is larger than the capacitance of the first insulating film 40 or the second insulating film 42. On the other hand, there is a relationship of Q=CV between the charge Q, the capacitance C, and the potential. Therefore, when the amount of charge of the natural oxide film is equal to the amount of charge of the first insulating film 40 or the second insulating film 42, it is considered that the potential of the natural oxide film is lower than the potential of the first insulating film 40 or the second insulating film 42. Therefore, even if the first side surface 2a and the second side surface 2b protrude from the first insulating film 40 and the second insulating film 42, the effect on the deflection of the electron beam is small.

[0095] The electronic component and the charged particle beam irradiation device of this embodiment also make it possible to provide an electronic component and a charged particle beam irradiation device capable of suppressing unintended deflection of the charged particle beam.

[0096] Third embodiment The electronic component of this embodiment further includes a third insulating film 47a provided between the first end 31 and the third end 35 and connected to the first insulating film 40, and a fourth insulating film 48a provided between the first end 31 and the third end 35 and connected to the second insulating film 42, and is different from the electronic components of the first and second embodiments in that an eleventh distance d11 between the third insulating film 47a and the third portion 32 in the first direction is longer than a second distance in the first direction, and a twelfth distance d12 between the fourth insulating film 48a and the sixth portion 36 in the first direction is longer than a fifth distance in the first direction. Here, descriptions of contents that overlap with the first and second embodiments will be omitted.

[0097] 12 is a schematic cross-sectional view of an electronic component 120 of this embodiment. The electronic component 120 has a structure A1_1u.

[0098] The third insulating film 47a is provided between the first end portion 31 and the third end portion 35, and is connected to the first insulating film 40. The third insulating film 47b is provided between the second end portion 33 and the fourth end portion 37, and is connected to the first insulating film 40.

[0099] The third insulating film 47a is provided between the first end portion 31 and the first convex portion 2c. The third insulating film 47b is provided between the second end portion 33 and the second convex portion 2d.

[0100] The fourth insulating film 48a is provided between the first end 31 and the third end 35, and is connected to the second insulating film 42. The fourth insulating film 48b is provided between the second end 33 and the fourth end 37, and is connected to the second insulating film 42.

[0101] The fourth insulating film 48a is provided between the third end portion 35 and the second convex portion 2d. The fourth insulating film 48b is provided between the fourth end portion 37 and the second convex portion 2d.

[0102] The third insulating film 47a, the third insulating film 47b, the fourth insulating film 48a, and the fourth insulating film 48b include, for example, SiOx (silicon oxide).

[0103] An eleventh distance d11 in the Y direction between the third insulating film 47a and the third portion 32 is longer than the second distance d2 in the Y direction. A twelfth distance d12 in the Y direction between the fourth insulating film 48a and the sixth portion 36 is longer than the fifth distance d5 in the Y direction. A thirteenth distance d13 in the Y direction between the third insulating film 47b and the second portion 30 is longer than the second distance d2 in the Y direction. A fourteenth distance d14 in the Y direction between the fourth insulating film 48b and the fifth portion 34 is longer than the fifth distance d5 in the Y direction.

[0104] For example, the third insulating film 47a and the third insulating film 47b are formed simultaneously with the first insulating film 40. Furthermore, for example, the fourth insulating film 48a and the fourth insulating film 48b are formed simultaneously with the second insulating film .

[0105] The electronic component and the charged particle beam irradiation device of this embodiment also make it possible to provide an electronic component and a charged particle beam irradiation device capable of suppressing unintended deflection of the charged particle beam.

[0106] (Fourth embodiment) The electronic component of the present embodiment differs from the electronic components of the first to third embodiments in that a part of the second surface 30b of the second portion 30 opposite the first surface 30a facing the third portion 32 is exposed, and a part of the fourth surface 34b of the fifth portion 34 opposite the third surface 34a facing the sixth portion 36 is exposed. Here, description of contents that overlap with the first to third embodiments will be omitted.

[0107] 13 is a schematic cross-sectional view of an electronic component 130 of this embodiment. The electronic component 130 has a structure C1.

[0108] The first side surface 2a of the first through-hole 80 has a first recess 2e. The first recess 2e is provided between the second surface 30b and the first substrate 2 in the Y direction and between the fourth surface 34b and the first substrate 2 in the Y direction. Therefore, a part of the second surface 30b provided on the opposite side of the first surface 30a of the second portion 30 facing the third portion 32 is exposed. In addition, a part of the fourth surface 34b provided on the opposite side of the third surface 34a of the fifth portion 34 facing the sixth portion 36 is exposed.

[0109] The exposed side surface 40a1 of the first insulating film 40 is in contact with the second face 30b. The exposed side surface 42a1 of the second insulating film 42 is in contact with the fourth face 34b.

[0110] The second side surface 2b of the first through hole has a second recess 2f. The second recess 2f is provided between the sixth surface 32b and the first substrate 2 in the Y direction and between the eighth surface 36b and the first substrate 2 in the Y direction. Therefore, a part of the sixth surface 32b provided on the side of the third portion 32 opposite to the fifth surface 32a facing the second portion 30 is exposed. Also, a part of the eighth surface 36b provided on the side of the sixth portion 36 opposite to the seventh surface 36a facing the fifth portion 34 is exposed.

[0111] The exposed side surface 40b1 of the first insulating film 40 is in contact with the sixth face 32b. The exposed side surface 42b2 of the second insulating film 42 is in contact with the fourth face 34b.

[0112] According to the electronic component 130 of this embodiment, the first recess 2e is provided, and thus the second portion 30 is provided between the exposed side surface 40a1 of the first insulating film 40 and the electron beam passing region R. Therefore, it is possible to make the influence of the electric field applied to the electron beam passing region R due to the potential applied to the second portion 30 greater than the influence of the electric field applied to the electron beam passing region R due to the charging of the side surface 40a1 of the first insulating film 40. The same is true for the side surface 40b1 of the first insulating film 40, the side surface 42a1 of the second insulating film 42, and the side surface 42b2 of the second insulating film 42.

[0113] The electronic component and the charged particle beam irradiation device of this embodiment also make it possible to provide an electronic component and a charged particle beam irradiation device capable of suppressing unintended deflection of the charged particle beam.

[0114] Fifth embodiment The electronic component of this embodiment differs from the electronic component of the fourth embodiment in that the first side surface 2a of the first substrate 2 in the vicinity of the first end 31 and the third end 35 has a first convex portion 2c, and the second side surface 2b of the first substrate 2 in the vicinity of the second end 33 and the fourth end 37 has a second convex portion 2d. Here, descriptions of contents that overlap with the first to fourth embodiments will be omitted.

[0115] 14 is a schematic cross-sectional view of an electronic component 140 of this embodiment. The electronic component 140 has a structure C2.

[0116] The electronic component and the charged particle beam irradiation device of this embodiment also make it possible to provide an electronic component and a charged particle beam irradiation device capable of suppressing unintended deflection of the charged particle beam.

[0117] Sixth embodiment The electronic component of the present embodiment differs from the electronic component of the fourth embodiment in that it further includes a fifth insulating film 49a provided in contact with the first side surface 2a, and a seventh electrode 38a provided in contact with the fifth insulating film 49a and spaced apart from the second portion 30 and the fifth portion 34. Here, descriptions of contents that overlap with the first to fifth embodiments will be omitted.

[0118] 15 is a schematic cross-sectional view of an electronic component 150 of this embodiment. The electronic component 150 has a structure D1.

[0119] The fifth insulating film 49a is provided in contact with the first side surface 2a. Note that the fifth insulating film 49a may be provided in indirect contact with the first side surface 2a by providing a natural oxide film (not shown) between the fifth insulating film 49a and the first side surface 2a.

[0120] The seventh electrode 38a is in contact with the fifth insulating film 49a and is provided apart from the second portion 30 and the fifth portion 34.

[0121] The sixth insulating film 49b is provided in contact with the second side surface 2b. Note that a natural oxide film (not shown) may be provided between the sixth insulating film 49b and the second side surface 2b, so that the sixth insulating film 49b is provided indirectly in contact with the second side surface 2b.

[0122] The fifth insulating film 49a and the sixth insulating film 49b include, for example, silicon oxide (SiOx).

[0123] The eighth electrode 38b is in contact with the sixth insulating film 49b and is provided apart from the third portion 32 and the sixth portion .

[0124] The seventh electrode 38a and the eighth electrode 38b include, for example, a metal nitride such as TiN (titanium nitride) or a metal such as W (tungsten).

[0125] The seventh electrode 38a and the eighth electrode 38b are grounded, for example, by wiring (not shown). Note that other potentials may be applied to the seventh electrode 38a and the eighth electrode 38b.

[0126] According to the electronic component 150 of this embodiment, an appropriate potential is applied to the seventh electrode 38a by, for example, grounding the seventh electrode 38a and the eighth electrode 38b. This makes it possible to further reduce the effect of the electric field applied to the electron beam passing region R due to the charging of the side surface 40a1 of the first insulating film 40.

[0127] The electronic component and the charged particle beam irradiation device of this embodiment also make it possible to provide an electronic component and a charged particle beam irradiation device capable of suppressing unintended deflection of the charged particle beam.

[0128] Seventh embodiment The electronic component of this embodiment differs from the electronic components of the first to sixth embodiments in that the second portion 30 has a third convex portion 30c connected to a second surface 30b provided on the second portion 30 opposite the first surface 30a that faces the third portion 32, and the fifth portion 34 has a fourth convex portion 34c connected to a fourth surface 34b provided on the fifth portion 34 opposite the third surface 34a that faces the sixth portion 36. Here, descriptions of contents that overlap with the first to sixth embodiments will be omitted.

[0129] 16 is a schematic cross-sectional view of an electronic component 160 of this embodiment. The electronic component 160 has structure B1.

[0130] The second portion 30 has a third protrusion 30c connected to a second surface 30b provided on the side of the second portion 30 opposite the first surface 30a facing the third portion 32.

[0131] The fifth portion has a fourth protrusion c connected to a fourth surface b provided on the side of the fifth portion opposite to a third surface a facing the sixth portion .

[0132] The third portion 32 has a fifth protrusion 32c connected to a sixth surface 32b provided on the side of the third portion 32 opposite to a fifth surface 32a facing the second portion 30.

[0133] The sixth portion has a sixth protrusion c connected to an eighth surface b provided on the fifth portion on the opposite side to a seventh surface a facing the fifth portion .

[0134] The first insulating film 40 is provided in contact with the third protrusion 30c and the fifth protrusion 32c.

[0135] The second insulating film 42 is provided in contact with the fourth protrusion 34c and the sixth protrusion 36c.

[0136] According to the electronic component 160 of this embodiment, by providing the third convex portion 30c, the fourth convex portion 34c, the fifth convex portion 32c, and the sixth convex portion 36c, it is possible to further increase the distance between the side surface 40a1 or the side surface 40b1 of the first insulating film 40, or the side surface 42a1 or the side surface 42b2 of the second insulating film 42, and the electron beam passing region R. This makes it possible to further suppress unintended deflection of the charged particle beam even if the side surface 40a1 or the side surface 40b1 of the first insulating film 40, or the side surface 42a1 or the side surface 42b2 of the second insulating film 42 is charged.

[0137] In addition, it is possible to further increase the distance between the first side surface 2a and the second side surface 2b and the electron beam passing region R. This makes it possible to further suppress unintended deflection of the charged particle beam.

[0138] The electronic component and the charged particle beam irradiation device of this embodiment also make it possible to provide an electronic component and a charged particle beam irradiation device capable of suppressing unintended deflection of the charged particle beam.

[0139] (Example) An electronic component according to the above embodiment was manufactured. In the electronic component 100, the first through-hole 80 was a square with diameters of 10 μm in the X and Y directions. The potentials of the first substrate 2, the first portion 10, the fourth portion 20, the second portion 30, the third portion 32, the fifth portion 34, and the sixth portion 36 were set to 0 V. A natural oxide film with a film thickness of about 1 nm was formed on the first side surface 2a and the second side surface 2b. The surface of the natural oxide film had a charge density of 10 μC / cm 2 It was electrically charged.

[0140] In the electronic component 120 (structure A1_1u) of the third embodiment, the distance in the Y direction between the first surface 30a and the third surface 34a and the side surface 40a1 of the first insulating film 40, the first side surface 2a of the first through hole 80, and the side surface 42a1 of the second insulating film 42 was 1 μm. In the electronic component 100 (A1_2u) of the first embodiment, the distance in the Y direction between the first surface 30a and the third surface 34a and the side surface 40a1 of the first insulating film 40, the first side surface 2a of the first through hole 80, and the side surface 42a1 of the second insulating film 42 was 2 μm.

[0141] FIG. 17 shows the potential distribution of electronic components according to the embodiments. FIG. 17(a) shows the potential distribution of an electronic component 1000 in a comparative embodiment. FIG. 17(b) shows the potential distribution of an electronic component 100 in the first embodiment. FIG. 17(c) shows the potential distribution of an electronic component 110 in the second embodiment. FIG. 17(d) shows the potential distribution of an electronic component 130 in the fourth embodiment. FIG. 17(e) shows the potential distribution of an electronic component 150 in the sixth embodiment. FIG. 17(f) shows the potential distribution of an electronic component 160 in the seventh embodiment.

[0142] In the electronic component shown in FIG. 17(b) to FIG. 17(f), it can be confirmed that the region where the potential increases with charging is farther away from the electron beam passing region R than the electronic component shown in FIG. 17(a). In addition, a natural oxide film was formed on the surfaces of the first side surface 2a and the second side surface 2b, but the film thickness was very thin at 1 nm. Since the capacitance value is inversely proportional to the film thickness, when comparing the capacitance when these surfaces are charged, the capacitance of the first side surface 2a and the second side surface 2b is much larger than the capacitance of the first insulating film 40 and the second insulating film 42. Since the capacitance C has a relationship of Q=CV with the charge Q and the potential V, the potential rise of the first side surface 2a and the second side surface 2b due to charging is smaller than the potential rise of the first insulating film 40 and the second insulating film 42. Therefore, it can be seen that the influence of the side surface 40a1 and the side surface 40b1 of the first insulating film 40 and the side surface 42a1 and the side surface 42b2 of the second insulating film 42 is larger.

[0143] Fig. 18 is a graph showing the electric field of the electronic component of the embodiment. Fig. 18(a) shows the electric potential distribution in the X direction in a plane parallel to the XZ plane passing through the first surface 30a and the third surface 34a. Fig. 18(b) shows the electric potential distribution in the X direction in a plane parallel to the XZ plane (the edge of the electron beam passing region R) spaced 2 μm from the first surface 30a and the third surface 34a in the -Y direction. It can be seen that the electric field is lower in the electronic component of each embodiment compared to the electronic component of the comparative embodiment.

[0144] Comparing the deflection angles of the electron beam passing through the first surface 30a and the third surface 34a in a plane parallel to the XZ plane, the deflection angle of the electronic component 110 (structure A2) of the second embodiment is smaller by about one order of magnitude than the deflection angle of the electronic component of the comparative embodiment. The deflection angle of the electronic component 140 (structure C2) of the fifth embodiment is also smaller by about one order of magnitude than the deflection angle of the electronic component of the comparative embodiment. Furthermore, in the potential distribution in the X direction, the deflection angles of the electronic component 120 (structure A1_1u) of the third embodiment and the electronic component 100 (structure A1_2u) of the first embodiment are smaller.

[0145] The deflection angle is further reduced in the electronic component 160 of the seventh embodiment (structure B1), the electronic component 130 of the fourth embodiment (structure C1), and the electronic component 150 of the sixth embodiment (structure D1). The deflection angle of the electronic component 150 of the sixth embodiment (structure D1) is approximately four orders of magnitude smaller than the deflection angle of the comparative electronic component (structure A0).

[0146] In addition, a charged particle beam irradiation device including a multi-charged particle beam irradiation device includes a charged particle beam drawing device that draws a mask pattern on a mask blank using a charged particle beam including an electron beam, and a charged particle beam inspection device that inspects the mask pattern by detecting secondary electrons generated by irradiating the mask pattern with an electron beam.

[0147] The electronic components described in the above embodiments are applicable to charged particle beam irradiation devices including a multi-charged particle beam irradiation device. In other words, the electronic components described in the above embodiments are applicable to charged particle beam inspection devices including a multi-charged particle beam inspection device, in addition to charged particle beam writing devices including a multi-charged particle beam writing device.

[0148] Although some embodiments and examples of the present invention have been described, these embodiments and examples are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims.

[0149] The above-described embodiments can be summarized as the following technical solutions.

[0150] (Technical proposal 1) a first substrate having a plurality of first through holes through which a plurality of charged particle beams pass, the first substrate having a first substrate surface and a second substrate surface provided on the opposite side of the first substrate surface; provided in each of the first through holes, a first electrode having a first portion, a second portion connected to the first portion and having a first end, and a third portion connected to the first portion and having a second end; a second electrode provided to face the first electrode at a distance, the second electrode having a fourth portion facing the first portion, a fifth portion connected to the fourth portion and having a third end portion facing the first end portion, and a sixth portion connected to the fourth portion and having a fourth end portion facing the second end portion; A plurality of electrode pairs having In each of the plurality of first through holes, an insulating film at least a part of which is provided between outer side surfaces of the first electrode and the second electrode and an inner side surface of the first through hole; Equipped with a surface of the insulating film in the first through hole exposed from the first electrode and the second electrode in the vicinity of the first end and the third end is located outside a first surface which is an inner side surface of the second portion and a third surface which is an inner side surface of the fifth portion, a surface of the insulating film in the first through hole exposed from the first electrode and the second electrode in the vicinity of the second end and the fourth end is located outside a fifth surface which is an inner side surface of the third portion and a seventh surface which is an inner side surface of the sixth portion; Electronic components. (Technical proposal 2) a first distance between the first side surface and the third portion is greater than or equal to a second distance between the second portion and the third portion; a third distance between the second side and the second portion is greater than or equal to the second distance; a seventh distance of the first insulating film near the second portion and the second end is longer than the second distance; an eighth distance of the first insulating film near the third portion and the first end is greater than the second distance; a ninth distance between the fifth portion and the second insulating film near the fourth end is longer than a fifth distance between the fifth portion and the sixth portion; a tenth distance between the sixth portion and the second insulating film near the third end is longer than the fifth distance; An electronic component as described in Technical Proposal 1. (Technical proposal 3) a fourth distance between the first side surface and the sixth portion is greater than or equal to the fifth distance; A sixth distance between the second side surface and the fifth portion is greater than or equal to the fifth distance. Electronic components as described in Technical Proposal 2. (Technical proposal 4) the first side surface protrudes inward beyond the first insulating film and the second insulating film, the second side surface protrudes inward beyond the first insulating film and the second insulating film; An electronic component as described in Technical Proposal 1. (Technical proposal 5) a third insulating film provided between the first end portion and the third end portion and connected to the first insulating film; a fourth insulating film provided between the first end and the third end and connected to the second insulating film; Further equipped with an eleventh distance between the third insulating film and the third portion is longer than a second distance between the second portion and the third portion; a twelfth distance between the fourth insulating film and the sixth portion is longer than the second distance; An electronic component as described in Technical Proposal 1. (Technical proposal 6) A part of a second surface of the second portion, the second surface being provided on the opposite side to the first surface, is exposed, A part of a fourth surface of the fifth portion, which is provided on the opposite side of the third surface, is exposed. An electronic component as described in Technical Proposal 1. (Technical proposal 7) a fifth insulating film provided in contact with the first side surface; a seventh electrode in contact with the fifth insulating film and spaced apart from the second portion and the fifth portion; The electronic component according to technical solution 6, further comprising: (Technical proposal 8) the second portion has a third protrusion connected to a second surface provided on the opposite side to the first surface, The fifth portion has a fourth protrusion connected to a fourth surface provided on the opposite side to the third surface. An electronic component as described in Technical Proposal 1. (Technical proposal 9) the seventh distance is equal to or greater than the sum of the second distance and a thickness of the third portion, the eighth distance is equal to or greater than the sum of the second distance and a thickness of the second portion, the ninth distance is equal to or greater than the sum of the fifth distance and a thickness of the sixth portion, the tenth distance is equal to or greater than the sum of the fifth distance and the film thickness of the fifth portion; Electronic components as described in Technical Proposal 2. (Technical proposal 10) the first side surface has a first protrusion protruding inward from the first side surface, the second side surface has a second protrusion protruding inward from the second side surface, a distance between the first insulating film near the first convex portion and the second insulating film near the first convex portion is longer than a length of the first convex portion in a direction from the first end portion toward the third end portion; a distance between the first insulating film in the vicinity of the second convex portion and the second insulating film in the vicinity of the second convex portion is longer than a length of the second convex portion in a direction from the second end portion toward the fourth end portion; An electronic component as described in Technical Proposal 1. (Technical proposal 11) the first insulating film and the second insulating film contain silicon oxide; An electronic component as described in Technical Proposal 1. (Technical proposal 12) a plurality of first bonding electrodes provided on the first substrate surface and electrically connected to the plurality of first electrodes, respectively; a plurality of second bonding electrodes provided on the first substrate surface and electrically connected to the plurality of second electrodes, respectively; a second substrate having a plurality of second through holes and a third substrate surface facing the first substrate surface; a plurality of third bonding electrodes provided on the third substrate surface and electrically connected to the plurality of first bonding electrodes, respectively; a plurality of fourth bonding electrodes provided on the third substrate surface and electrically connected to the plurality of second bonding electrodes, respectively; The electronic component according to technical solution 1 further comprises: (Technical proposal 13) the plurality of first bonding electrodes, the plurality of second bonding electrodes, the plurality of third bonding electrodes, and the plurality of fourth bonding electrodes contain Au (gold); An electronic component as described in Technical Proposal 12. (Technical proposal 14) A charged particle beam irradiation device equipped with the electronic components described in Technical Proposal 1. [Explanation of symbols]

[0151] 2: First board 2a: 1st side 2b: 2nd side 2c: First protrusion 2d: Second convex part 2e: First recess 2f: Second recess 3:Technical proposal 4: Recess 6: First board surface 8: Second board surface 10: 1st part 12: First connection part 14: Second connection part 20: 4th part 22: Third connection part 24: 4th connection part 30:Second part 30a: 1st page 30b: 2nd side 30c: Third convex part 31:First end 32: 3rd part 32a: 5th side 32b:Side 6 32c: 5th convex part 33:Second end 34: 5th part 34a: 3rd side 34b: 4th side 34c: 4th convex part 35:Third end 36: Part 6 36a:Side 7 36b:8th side 36c: 6th convex part 37: 4th end 37a: first connection electrode 37b: second connection electrode 37c: Third connection electrode 37d: Fourth connection electrode 38a: 7th electrode 38b: 8th electrode 40: First insulating film 40a1: Side 40b1: Side 42: Second insulating film 42a1: Side 42b2: Side 44: 1st plate electrode 46: 2nd plate electrode 47: Third insulating film 47a: Third insulating film 47b: third insulating film 48: Fourth insulating film 48a: fourth insulating film 48b: fourth insulating film 49a: Fifth insulating film 49b: sixth insulating film 50: 1st junction electrode 52:Second bonding electrode 54:Third junction electrode 56: 4th junction electrode 58: Circuit board 60: Third board surface 62: 4th board surface 64: Insulating film 66: Wiring 68: Control circuit 70: Wiring 80: First through hole 90: Second through hole 92: 1st electrode 94:Second electrode 96: Electrode pair 98: Barrier metal 100: Electronic components 190: Electron beam drawing device d1: First distance d2: 2nd distance d3: Third distance d4: 4th distance d5: 5th distance d6: 6th distance d7: 7th distance d8: 8th distance d9: 9th distance d10: 10th distance d11: 11th distance d12: 12th distance

Claims

1. a first substrate having a plurality of first through holes through which a plurality of charged particle beams pass, the first substrate having a first substrate surface and a second substrate surface provided on an opposite side to the first substrate surface; provided in each of the plurality of first through holes, a first electrode having a first portion, a second portion connected to the first portion and having a first end, and a third portion connected to the first portion and having a second end; a second electrode provided to face the first electrode at a distance, the second electrode having a fourth portion facing the first portion, a fifth portion connected to the fourth portion and having a third end facing the first end, and a sixth portion connected to the fourth portion and having a fourth end facing the second end; A plurality of electrode pairs having In each of the plurality of first through holes, an insulating film at least a part of which is provided between outer side surfaces of the first electrode and the second electrode and an inner side surface of the first through hole; Equipped with a surface of the insulating film in the first through hole exposed from the first electrode and the second electrode in the vicinity of the first end and the third end is located outside a first surface which is an inner side surface of the second portion and a third surface which is an inner side surface of the fifth portion, a surface of the insulating film in the first through hole exposed from the first electrode and the second electrode in the vicinity of the second end and the fourth end is located outside a fifth surface which is an inner side surface of the third portion and a seventh surface which is an inner side surface of the sixth portion, Electronic components.

2. a first distance between the first side surface and the third portion is greater than or equal to a second distance between the second portion and the third portion; a third distance between the second side surface and the second portion is greater than or equal to the second distance; a seventh distance between the second portion and the first insulating film near the second end is greater than the second distance; an eighth distance between the third portion and the first insulating film near the first end is greater than the second distance; a ninth distance between the fifth portion and the second insulating film near the fourth end is longer than a fifth distance between the fifth portion and the sixth portion; a tenth distance between the sixth portion and the second insulating film near the third end is longer than the fifth distance; The electronic component according to claim 1.

3. a fourth distance between the first side surface and the sixth portion is greater than or equal to the fifth distance; A sixth distance between the second side surface and the fifth portion is greater than or equal to the fifth distance. The electronic component according to claim 2.

4. the first side surface protrudes inward beyond the first insulating film and the second insulating film, the second side surface protrudes inward beyond the first insulating film and the second insulating film; The electronic component according to claim 1.

5. a third insulating film provided between the first end and the third end and connected to the first insulating film; a fourth insulating film provided between the first end and the third end and connected to the second insulating film; Further equipped with an eleventh distance between the third insulating film and the third portion is longer than a second distance between the second portion and the third portion; a twelfth distance between the fourth insulating film and the sixth portion is longer than the second distance; The electronic component according to claim 1.

6. A part of a second surface of the second portion, the second surface being provided on the opposite side to the first surface, is exposed, A part of a fourth surface of the fifth portion provided on the opposite side of the third surface is exposed. The electronic component according to claim 1.

7. a fifth insulating film provided in contact with the first side surface; a seventh electrode in contact with the fifth insulating film and spaced apart from the second portion and the fifth portion; The electronic component of claim 6 further comprising:

8. the second portion has a third protrusion connected to a second surface provided on the opposite side to the first surface, The fifth portion has a fourth protrusion connected to a fourth surface provided on the opposite side to the third surface. The electronic component according to claim 1.

9. the seventh distance is equal to or greater than the sum of the second distance and a thickness of the third portion, the eighth distance is equal to or greater than the sum of the second distance and a thickness of the second portion, the ninth distance is equal to or greater than the sum of the fifth distance and a film thickness of the sixth portion, the tenth distance is equal to or greater than the sum of the fifth distance and a thickness of the fifth portion; The electronic component according to claim 2.

10. the first side surface has a first protrusion protruding inward from the first side surface, the second side surface has a second protrusion protruding inward from the second side surface, a distance between the first insulating film near the first convex portion and the second insulating film near the first convex portion is longer than a length of the first convex portion in a direction from the first end portion toward the third end portion; a distance between the first insulating film in the vicinity of the second convex portion and the second insulating film in the vicinity of the second convex portion is longer than a length of the second convex portion in a direction from the second end portion toward the fourth end portion; The electronic component according to claim 1.

11. the first insulating film and the second insulating film contain silicon oxide; The electronic component according to claim 1.

12. a plurality of first bonding electrodes provided on the first substrate surface and electrically connected to the plurality of first electrodes, respectively; a plurality of second bonding electrodes provided on the first substrate surface and electrically connected to the plurality of second electrodes, respectively; a second substrate having a plurality of second through holes and a third substrate surface facing the first substrate surface; a plurality of third bonding electrodes provided on the third substrate surface and electrically connected to the plurality of first bonding electrodes, respectively; a plurality of fourth bonding electrodes provided on the third substrate surface and electrically connected to the plurality of second bonding electrodes, respectively; The electronic component of claim 1 further comprising:

13. the plurality of first bonding electrodes, the plurality of second bonding electrodes, the plurality of third bonding electrodes, and the plurality of fourth bonding electrodes contain Au (gold); The electronic component according to claim 12.

14. A charged particle beam irradiation device comprising the electronic component according to claim 1.

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