Method for manufacturing semiconductor device

Abstract

To provide a method for manufacturing a semiconductor device that is capable of improving characteristics.SOLUTION: A method for manufacturing a semiconductor device includes first processing, second processing, and third processing. The first processing is performed on a semiconductor member including a first surface and including a crystal. The first processing includes at least one of injection of a first element from the first surface into a first portion of the semiconductor member and irradiation of the first portion with a particle beam. In the second processing, a second element is injected into a first region of the semiconductor member, and the second element is not injected into a second region of the semiconductor member. The first region and the second region are between the first surface and the first portion. The direction from the first region to the second region is along the first surface. After the second processing, the third processing executes irradiation of the semiconductor member with a first electromagnetic wave having a first peak wavelength from the first surface through the first region and the second region.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] An embodiment of the present invention relates to a method for manufacturing a semiconductor device. [Background technology]

[0002] For example, there is a semiconductor device such as a reverse conducting IGBT (RC-IGBT). A manufacturing method of a semiconductor device capable of improving characteristics is desired. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2019 / 216085 Summary of the Invention [Problem to be solved by the invention]

[0004] The embodiments provide a method for manufacturing a semiconductor device capable of improving characteristics. [Means for solving the problem]

[0005] According to an embodiment, a method for manufacturing a semiconductor device includes a first process, a second process, and a third process. The first process is performed on a semiconductor member including a first surface and including a crystal. The first process includes at least one of injecting a first element into a first portion of the semiconductor member from the first surface and irradiating the first portion with a particle beam. In the second process, a second element is injected into a first region of the semiconductor member, and the second element is not injected into a second region of the semiconductor member. The first region and the second region are between the first surface and the first portion. The direction from the first region to the second region is along the first surface. The third process is performed after the second process, by irradiating the semiconductor member with a first electromagnetic wave having a first peak wavelength from the first surface through the first region and the second region. [Brief description of the drawings]

[0006] [Figure 1] 1(a) to 1(d) are schematic cross-sectional views illustrating the method for manufacturing the semiconductor device according to the first embodiment. [Diagram 2] FIG. 2 is a flowchart illustrating the method for manufacturing the semiconductor device according to the first embodiment. [Diagram 3] FIG. 3 is a schematic cross-sectional view illustrating the semiconductor device according to the second embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios of each part may be different depending on the drawing. In this specification and each drawing, elements similar to those described above with reference to the previous drawings are given the same reference numerals and detailed descriptions thereof will be omitted as appropriate.

[0008] (First embodiment) 1(a) to 1(d) are schematic cross-sectional views illustrating the method for manufacturing the semiconductor device according to the first embodiment. FIG. 2 is a flowchart illustrating the method for manufacturing the semiconductor device according to the first embodiment. 2, the method for manufacturing a semiconductor device according to the embodiment includes a first process S1, a second process S2, and a third process S3. The method may further include a fourth process S4.

[0009] As shown in Fig. 1(a), a first process S1 is performed on a semiconductor member 10. The semiconductor member 10 includes a first surface 10f and includes a crystal. The semiconductor member 10 includes, for example, a silicon crystal. The semiconductor member 10 may include, for example, a SiC crystal.

[0010] The first process S1 includes at least one of implanting a first element from the first surface 10f into the first portion 10P of the semiconductor member 10 and irradiating the first portion 10P with a particle beam. For example, the first process S1 forms crystal defects 10D in the first portion 10P.

[0011] The direction perpendicular to the first surface 10f is defined as the Z-axis direction. One direction perpendicular to the Z-axis direction is defined as the X-axis direction. The direction perpendicular to the Z-axis direction and the X-axis direction is defined as the Y-axis direction. At least a part of the first portion 10P is along the XY plane.

[0012] The first element includes at least one selected from the group consisting of, for example, hydrogen, helium, neon, argon, krypton, xenon, and radon. By implanting such a first element, defects 10D are formed in the first portion 10P.

[0013] In the first process S1, the first portion 10P may be irradiated with a particle beam. The particle beam may be, for example, a charged particle beam. The particle beam may be, for example, an electron beam. By irradiating the first portion 10P with such a particle beam, a defect 10D is formed in the first portion 10P.

[0014] In one example, the first element may include at least one selected from the group consisting of phosphorus, arsenic, antimony, boron, gallium, indium, and oxygen. For example, the first element may include at least one selected from the group consisting of phosphorus, arsenic, antimony, and oxygen. Such a first element may cause the first portion 10P to be an n-type semiconductor region. For example, the first element may include at least one selected from the group consisting of boron, gallium, and indium. Such a first element may cause the first portion 10P to be a p-type semiconductor region. For example, the first element that brings about a conductivity type may form the defect 10D.

[0015] As shown in Fig. 1(b), in the second process S2, a second element is implanted into the first region 10a of the semiconductor member 10. The second element is not implanted into the second region 10b of the semiconductor member 10. In this manner, in the second process S2, the second element is selectively implanted into the first region 10a. Examples of the second element will be described later.

[0016] 1(b), the first region 10a and the second region 10b are located between the first surface 10f and the first portion 10P. The direction from the first region 10a to the second region 10b is along the first surface 10f.

[0017] The first region 10a may be in an island or stripe shape, etc. The planar shape of the first region 10a is arbitrary.

[0018] The third process S3 is performed after the second process S2. As shown in Fig. 1(c), in the third process S3, a first electromagnetic wave 81 is irradiated onto the semiconductor member 10 from the first surface 10f via the first region 10a and the second region 10b. The first electromagnetic wave 81 has, for example, a first peak wavelength.

[0019] The first portion 10P includes an overlapping portion 10p that overlaps with the first region 10a in the Z-axis direction (first direction D1) and a non-overlapping portion 10q that does not overlap with the first region 10a. The non-overlapping portion 10q overlaps with the second region 10b in the first direction D1. The first electromagnetic wave 81 passes through the second region 10b and reaches the non-overlapping portion 10q. The irradiation of the first electromagnetic wave 81 repairs the defect 10D included in the non-overlapping portion 10q. On the other hand, the first electromagnetic wave 81 is attenuated in the first region 10a. Therefore, the degree of repair of the defect 10D included in the overlapping portion 10p is low. The defect 10D remains in the overlapping portion 10p.

[0020] In this manner, in the embodiment, the crystal defects 10D can be efficiently and selectively formed. The defects 10D can function, for example, as traps for carriers flowing through the semiconductor member 10. The defects 10D can, for example, control the lifetime of the carriers. By locally forming the defects 10D in the semiconductor member 10, it is possible to effectively prevent the injected carriers from flowing through the semiconductor member 10 during operation of the semiconductor device. According to the embodiment, it is possible to provide a manufacturing method for a semiconductor device capable of improving characteristics.

[0021] By applying the manufacturing method of the semiconductor device according to the embodiment, it is possible to effectively improve the characteristics of, for example, a reverse conducting insulated gate bipolar transistor (RC-IGBT), etc. For example, in the RC-IGBT, the turn-off loss can be effectively suppressed.

[0022] As described above, in the embodiment, the first process S1 includes forming a crystal defect (the defect 10D) in the first portion 10P.

[0023] At least a part of the first electromagnetic wave 81 irradiated in the third process S3 is absorbed in the first region 10a. Such a first region 10a is formed in the second process S2. That is, the second process S2 makes the first absorptance of the first region 10a for the electromagnetic wave of the first peak wavelength higher than the second absorptance of the second region 10b for the electromagnetic wave of the first peak wavelength.

[0024] As already described, in the second treatment S2, the second element is implanted into the first region 10a. This reduces the crystallinity of the first region 10a. For example, the crystallinity of the first region 10a after the second treatment S2 is lower than the crystallinity of the second region 10b after the second treatment S2.

[0025] For example, before the second process S2, the first region 10a and the second region 10b include crystals. After the second process S2, at least a part of the first region 10a may include an amorphous region. The first electromagnetic wave 81 having the first peak wavelength is effectively absorbed in the first region 10a having low crystallinity. As a result, defects 10D are effectively left in the overlapping portion 10p that overlaps with the first region 10a.

[0026] For example, the second element implanted in the second process S2 may include at least one selected from the group consisting of phosphorus, arsenic, antimony, silicon, germanium, carbon, nitrogen, oxygen, and argon. This effectively reduces the crystallinity in the first region 10a implanted with the second element. For example, the second process S2 may include a first implantation and a second implantation. In the first implantation, for example, at least one element selected from the group consisting of silicon, germanium, carbon, nitrogen, oxygen, and argon is implanted. In the second implantation, for example, at least one element selected from the group consisting of phosphorus, arsenic, and antimony is implanted. The second implantation may be performed after the first implantation. The first implantation may be performed after the second implantation. For example, irradiation of electromagnetic waves (for example, infrared laser, etc.) may be performed between the first implantation and the second implantation. Activation may be performed by the irradiation of the electromagnetic waves.

[0027] The first region 10a into which the second element is implanted in the second treatment S2 may have electrical conductivity imparted by the second element. The crystallinity of the first region 10a, which has been reduced by the implantation of the second element, may be restored in the fourth treatment S4 (see FIG. 2).

[0028] The fourth process S4 is performed after the third process S3. As shown in FIG. 1(d), in the fourth process S4, the first region 10a is irradiated with a second electromagnetic wave 82. By irradiating the first region 10a with the second electromagnetic wave 82, for example, the crystallinity of the first region 10a is restored. The second electromagnetic wave 82 has a second peak wavelength. In one example, the second peak wavelength is shorter than the first peak wavelength. By irradiating the first region 10a with such a second electromagnetic wave 82, the crystallinity of the first region 10a is more effectively restored.

[0029] For example, the first electromagnetic wave 81 is infrared light. The second electromagnetic wave 82 is ultraviolet light or visible light. For example, the first peak wavelength is not less than 690 nm and not more than 3000 nm. For example, the second peak wavelength is not less than 100 nm and less than 690 nm. In one example, the first peak wavelength is 808 nm. In one example, the second peak wavelength is 527 nm. For example, the peak wavelength of the first electromagnetic wave 81 may be not less than 100 nm and not more than 3000 nm. For example, the peak wavelength of the second electromagnetic wave 82 may be not less than 100 nm and not more than 830 nm.

[0030] In one example, the first electromagnetic wave 81 is an infrared laser. The second electromagnetic wave 82 is a green laser. For example, the first electromagnetic wave 81 may include a pulsed laser having a first pulse width of 1 μs or more and 200 μs or less. For example, the second electromagnetic wave 82 may include a pulsed laser having a second pulse width of 50 ns or more and 1200 ns or less.

[0031] For example, irradiation of the first region 10a with the second electromagnetic wave 82 may melt at least a part of the first region 10a, thereby effectively repairing the defects 10D in the first region 10a. On the other hand, irradiation of the first region 10a with the first electromagnetic wave 81 may not melt the first region 10a.

[0032] 1(d), the irradiation of the second electromagnetic wave 82 may include irradiating the second region 10b with the second electromagnetic wave 82. The crystallinity of the second region 10b is improved. The irradiation is performed by a simple process.

[0033] In this way, the fourth treatment S4, for example, increases the crystallinity of the first region 10a. Good electrical conductivity is obtained. The crystallinity of the first region 10a after the fourth treatment S4 is higher than the crystallinity of the first region 10a after the third treatment S3 and before the fourth treatment S4.

[0034] When the first process S1 includes implanting a first element, the dose of the first element in the implantation of the first element may be lower than the second dose of the second element in the second process S2 into the first region 10a. The low dose of the first element can effectively form the target defect 10D. The dose of the first element in the implantation of the first element can be, for example, 1×10 12 cm -2 5×10 or more 13 cm -2 Less than (for example, about 2 × 10 12 cm -2 ) etc. are fine.

[0035] On the other hand, by implanting the second element at a sufficiently high dose, the absorptance of the first region 10a at the first peak wavelength is effectively increased. For example, after the second treatment S2, at least a portion of the first region 10a includes an amorphous region.

[0036] In one example, the second dose of the second element to the first region 10a in the second process S2 is 5×10 14 cm -2 The second dose is, for example, 1×10 16 cm -2 The second dose may be, for example, 5×10 16 cm -2 The following is also fine.

[0037] For example, in the first sample in which the first process S1 and the third process S3 were performed without performing the second process S2, the activation rate of the defects 10D in the overlapping portion 10p was 73%. 15 cm -2 In the second sample subjected to the first treatment S1, the second treatment S2 (the second dose is 3×10 15 cm -2In the third sample having undergone the second treatment S2 and the third treatment S3, the activation rate of the defects 10D in the overlapping portion 10p is 0.2% or less. In this manner, by performing the second treatment S2, the first electromagnetic wave 81 in the third treatment S3 is effectively attenuated in the first region 10a, and the defects 10D effectively remain in the overlapping portion 10p.

[0038] At least the second dose is 5×10 14 cm -2 In this manner, the defect 10D can be effectively left.

[0039] Second embodiment The second embodiment relates to a semiconductor device to which the method for manufacturing a semiconductor device of the first embodiment can be applied. FIG. 3 is a schematic cross-sectional view illustrating the semiconductor device according to the second embodiment. As shown in FIG. 3, a semiconductor device 110 according to the second embodiment includes a first electrode 51 and a semiconductor member 10.

[0040] The semiconductor member 10 includes a first semiconductor region 11, a second semiconductor region 12, a third semiconductor region 13, and a fourth semiconductor region 14. The first semiconductor region 11 is of a first conductivity type. The second semiconductor region 12 is provided between a first electrode 51 and the first semiconductor region 11. The second semiconductor region 12 is of the first conductivity type.

[0041] The third semiconductor region 13 is provided between the first electrode 51 and the first semiconductor region 11, and is of a second conductivity type. A second direction D2 from the second semiconductor region 12 to the third semiconductor region 13 intersects with a first direction D1 from the first electrode 51 to the semiconductor member 10. The first conductivity type is one of n-type and p-type. The second conductivity type is the other of n-type and p-type. In the following, the first conductivity type is n-type, and the second conductivity type is p.

[0042] The fourth semiconductor region 14 is of the first conductivity type. The fourth semiconductor region 14 is between the second semiconductor region 12 and the first semiconductor region 11, and between the third semiconductor region 13 and the first semiconductor region 11.

[0043] The semiconductor member 10 includes a first partial region p1 and a second partial region p2. The first partial region p1 overlaps with the second semiconductor region 12 in the first direction D1. The second partial region p2 overlaps with the third semiconductor region 13 in the first direction D1. The carrier concentration in the first partial region p1 is lower than the carrier concentration in the second partial region p2.

[0044] In the semiconductor device 110, the second semiconductor region 12 corresponds to the first region 10a. The third semiconductor region 13 may correspond to the second region 10b. By irradiating the first electromagnetic wave 81 through the second semiconductor region 12, the first electromagnetic wave 81 is attenuated, and the carrier concentration in the first partial region p1 is maintained low. On the other hand, a high carrier density is obtained in the second partial region p2 that does not overlap with the second semiconductor region 12. For example, the high carrier density in the second partial region p2 is considered to be due to the recovery of the crystal defect 10D caused by the first electromagnetic wave 81.

[0045] 3, the semiconductor member 10 may further include a third partial region p3. The third partial region p3 is provided between the second semiconductor region 12 and the first partial region p1 in the first direction D1. The carrier concentration in the third partial region p3 may be higher than the carrier concentration in the first partial region p1.

[0046] In the semiconductor device 110, the carrier concentration in the second semiconductor region 12 may be higher than the carrier concentration in the first partial region p1. The carrier concentration in the second semiconductor region 12 is higher than the carrier concentration in the first semiconductor region 11.

[0047] 3, the semiconductor device 110 may further include a second electrode 52, a third electrode 53, and a first insulating member 41. The semiconductor member 10 is provided between the first electrode 51 and the second electrode 52 in the first direction D1. The first semiconductor region 11 includes a first semiconductor portion 11a and a second semiconductor portion 11b. The first semiconductor portion 11a is provided between the second semiconductor region 12 and the second electrode 52 in the first direction D1. The second semiconductor portion 11b is provided between the third semiconductor region 13 and the second electrode 52 in the first direction D1.

[0048] The semiconductor member 10 may further include a sixth semiconductor region 16 of the second conductivity type, a seventh semiconductor region 17 of the second conductivity type, and an eighth semiconductor region 18 of the first conductivity type. The sixth semiconductor region 16 is provided between the first semiconductor portion 11a and the second electrode 52 in the first direction D1. The eighth semiconductor region 18 is provided between the second semiconductor portion 11b and the second electrode 52 in the first direction D1. At least a portion of the seventh semiconductor region 17 is provided between the eighth semiconductor region 18 and the second semiconductor portion 11b in the first direction D1.

[0049] The second electrode 52 is electrically connected to the sixth semiconductor region 16 and the eighth semiconductor region 18. The third electrode 53 faces the first semiconductor region 11, the seventh semiconductor region 17, and the eighth semiconductor region 18. At least a portion of the first insulating member 41 is provided between the third electrode 53 and the semiconductor member 10. The first insulating member 41 electrically insulates the third electrode 53 and the semiconductor member 10.

[0050] The current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The second semiconductor region 12 is included in a fast recovery diode (FRD). The third semiconductor region 13 is included in an insulated gate bipolar transistor (IGBT). The semiconductor device 110 is, for example, an RC-IGBT.

[0051] 3, the semiconductor member 10 may further include a ninth semiconductor region 19 of the second conductivity type. The ninth semiconductor region 19 is provided between the seventh semiconductor region 17 and the second electrode 52 in the first direction D1. The eighth semiconductor region 18 is provided between the third electrode 53 and the ninth semiconductor region 19. The impurity concentration of the second conductivity type in the ninth semiconductor region 19 is higher than the impurity concentration of the second conductivity type in the seventh semiconductor region 17. The second electrode 52 is electrically connected to the ninth semiconductor region 19.

[0052] In an embodiment, information about the defect 10D may be obtained by, for example, evaluating carrier density, etc. Information about the defect 10D may be obtained by, for example, electron microscope observation or X-ray diffraction, etc. Information about crystallinity may be obtained by, for example, electron microscope observation or X-ray diffraction, etc. Information about length and thickness may be obtained by, for example, electron microscope observation, etc. Information about the presence and concentration of elements may be obtained by, for example, SIMS (Secondary Ion Mass Spectrometry) or EDX (Energy dispersive X-ray spectroscopy), etc.

[0053] The embodiments may include the following technical solutions. (Technical proposal 1) A first treatment is performed on a semiconductor member including a first surface and including a crystal, the first treatment including at least one of implanting a first element from the first surface into a first portion of the semiconductor member and irradiating the first portion with a particle beam; A second treatment is performed by injecting a second element into a first region of the semiconductor member and not injecting the second element into a second region of the semiconductor member, the first region and the second region being between the first surface and the first portion, and a direction from the first region to the second region being along the first surface; a third process of irradiating the semiconductor member with a first electromagnetic wave having a first peak wavelength from the first surface through the first region and the second region after the second process; A method for manufacturing a semiconductor device comprising the steps of:

[0054] (Technical proposal 2) The method for manufacturing a semiconductor device described in Technical Proposal 1, wherein the first treatment includes forming crystal defects in the first portion.

[0055] (Technical proposal 3) The method for manufacturing a semiconductor device described in Technical Proposal 1 or 2, wherein the second treatment makes a first absorptance of the first region for electromagnetic waves of the first peak wavelength higher than a second absorptance of the second region for the electromagnetic waves of the first peak wavelength.

[0056] (Technical proposal 4) the first element includes at least one selected from the group consisting of hydrogen, helium, neon, argon, krypton, xenon, and radon; 4. The method for manufacturing a semiconductor device according to any one of Technical Schemes 1 to 3, wherein the particle beam includes an electron beam.

[0057] (Technical proposal 5) The semiconductor member includes silicon, 4. The method for manufacturing a semiconductor device according to any one of Technical Schemes 1 to 3, wherein the first element includes at least one selected from the group consisting of phosphorus, arsenic, and antimony.

[0058] (Technical proposal 6) The method for manufacturing a semiconductor device according to any one of Technical Schemes 1 to 5, wherein the second element includes at least one selected from the group consisting of phosphorus, arsenic, antimony, silicon, germanium, carbon, nitrogen, oxygen, and argon.

[0059] (Technical proposal 7) Further comprising a fourth process carried out after the third process, The method for manufacturing a semiconductor device according to any one of Technical Schemes 1 to 6, wherein the fourth treatment includes irradiating the first region with a second electromagnetic wave.

[0060] (Technical proposal 8) The method for manufacturing a semiconductor device described in Technical Proposal 7, wherein the irradiation of the second electromagnetic wave includes irradiating the second region with the second electromagnetic wave.

[0061] (Technical proposal 9) the second electromagnetic wave has a second peak wavelength; The method for manufacturing a semiconductor device according to Technical Solution 7 or 8, wherein the second peak wavelength is shorter than the first peak wavelength.

[0062] (Technical proposal 10) the first electromagnetic wave is infrared radiation, The method for manufacturing a semiconductor device described in Technical Solution 9, wherein the second electromagnetic wave is ultraviolet light or visible light.

[0063] (Technical proposal 11) 11. The method for manufacturing a semiconductor device according to any one of Technical Schemes 7 to 10, wherein the fourth treatment increases the crystallinity of the first region.

[0064] (Technical proposal 12) A method for manufacturing a semiconductor device described in any one of Technical Solutions 7 to 10, wherein the crystallinity of the first region after the fourth treatment is higher than the crystallinity of the first region after the third treatment and before the fourth treatment.

[0065] (Technical proposal 13) 12. The method for manufacturing a semiconductor device according to any one of Technical Schemes 7 to 11, wherein the irradiation of the first region with the second electromagnetic wave melts at least a portion of the first region.

[0066] (Technical proposal 14) The method for manufacturing a semiconductor device described in Technical Proposal 13, wherein the irradiation of the first region with the first electromagnetic wave does not melt the first region.

[0067] (Technical proposal 15) The second dose of the second element to the first region in the second process is 5×10 14 cm -2 The above is the method for manufacturing a semiconductor device described in Technical Proposal 3.

[0068] (Technical proposal 16) The second dose of the second element to the first region in the second process is 5×10 14 cm -2 5×10 or more 16 cm -2 A method for manufacturing a semiconductor device according to Technical Proposal 3, which is as follows:

[0069] (Technical proposal 17) the first treatment includes the implantation of the first element; A method for manufacturing a semiconductor device described in any one of Technical Proposals 1 to 13, wherein a dose of the first element in the implantation of the first element is lower than a second dose of the second element into the first region in the second process.

[0070] (Technical proposal 18) The method for manufacturing a semiconductor device according to any one of Technical Schemes 7 to 14, wherein the second electromagnetic wave includes a pulse laser having a second pulse width of 50 ns or more and 1200 ns or less.

[0071] (Technical proposal 19) The method for manufacturing a semiconductor device according to any one of Technical Schemes 1 to 18, wherein the first electromagnetic wave includes a pulse laser having a first pulse width of 1 μs or more and 200 μs or less.

[0072] (Technical proposal 20) 20. The method for manufacturing a semiconductor device according to any one of Technical Schemes 1 to 19, wherein after the second treatment, at least a part of the first region includes an amorphous region.

[0073] According to the embodiment, it is possible to provide a method for manufacturing a semiconductor device capable of improving characteristics.

[0074] The above describes the embodiments of the present invention with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configurations of each element, such as electrodes, semiconductor members, and insulating members, included in the semiconductor device are included in the scope of the present invention as long as a person skilled in the art can implement the present invention in a similar manner and obtain similar effects by appropriately selecting them from the known range.

[0075] Furthermore, any combination of two or more elements of each of the specific examples, within the scope of technical feasibility, is also included within the scope of the present invention as long as it includes the gist of the present invention.

[0076] In addition, all semiconductor devices that can be implemented by those skilled in the art by appropriately modifying the design based on the semiconductor device described above as an embodiment of the present invention also belong to the scope of the present invention as long as they include the gist of the present invention.

[0077] In addition, within the scope of the concept of the present invention, a person skilled in the art may conceive of various modifications and alterations, and it will be understood that these modifications and alterations also fall within the scope of the present invention.

[0078] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims. [Explanation of symbols]

[0079] 10: semiconductor member, 10D: defect, 10P: first portion, 10a, 10b: first and second regions, 10f: first surface, 10p: overlapping portion, 10q: non-overlapping portion, 11-19: first to ninth semiconductor regions, 11a, 11b: first and second semiconductor portions, 41: first insulating member, 51-53: first to third electrodes, 81, 82: first and second electromagnetic waves, 110: semiconductor device, D1, D2: first and second directions, S1-S4: first to fourth treatments, p1-p3: first to third partial regions

Claims

1. A first treatment is performed on a semiconductor member including a first surface and including a crystal, the first treatment including at least one of injecting a first element from the first surface into a first portion of the semiconductor member and irradiating the first portion with a particle beam; A second treatment is performed by injecting a second element into a first region of the semiconductor member and not injecting the second element into a second region of the semiconductor member, the first region and the second region being between the first surface and the first portion, and a direction from the first region to the second region being along the first surface; a third process of irradiating the semiconductor member with a first electromagnetic wave having a first peak wavelength from the first surface through the first region and the second region after the second process; A method for manufacturing a semiconductor device comprising the steps of:

2. The method for manufacturing a semiconductor device according to claim 1 , wherein the first treatment includes forming crystal defects in the first portion.

3. 2. The method of claim 1, wherein the second treatment causes a first absorptance of the first region for electromagnetic waves of the first peak wavelength to be higher than a second absorptance of the second region for the electromagnetic waves of the first peak wavelength.

4. the first element includes at least one selected from the group consisting of hydrogen, helium, neon, argon, krypton, xenon, and radon; The method for manufacturing a semiconductor device according to claim 1 , wherein the particle beam includes an electron beam.

5. 5. The method for manufacturing a semiconductor device according to claim 4, wherein the second element includes at least one selected from the group consisting of phosphorus, arsenic, antimony, silicon, germanium, carbon, nitrogen, oxygen, and argon.

6. Further comprising a fourth process performed after the third process, 6. The method for manufacturing a semiconductor device according to claim 1, wherein the fourth process includes irradiating the first region with a second electromagnetic wave.

7. the second electromagnetic wave has a second peak wavelength; The method for manufacturing a semiconductor device according to claim 6 , wherein the second peak wavelength is shorter than the first peak wavelength.

8. the first electromagnetic wave is infrared radiation, The method for manufacturing a semiconductor device according to claim 7 , wherein the second electromagnetic wave is ultraviolet light or visible light.

9. The second dose of the second element to the first region in the second process is 5×10 １４ cm －２ The method for manufacturing a semiconductor device according to claim 3 .

10. The method for manufacturing a semiconductor device according to claim 1 , wherein after the second treatment, at least a portion of the first region includes an amorphous region.

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