Semiconductor manufacturing equipment, coating equipment and method for manufacturing semiconductor device

Abstract

To provide a technology capable of reducing adhesion of an applied paste to a nozzle.SOLUTION: A semiconductor manufacturing equipment has a preform section and a controller. The preform section has a stage that holds a substrate and a nozzle that is movable above the stage according to the coating pattern. The controller is configured to differentiate between the outward application operation and the return application operation when the paste is applied by reciprocating along the same path of the coating pattern.SELECTED DRAWING: Figure 9

Description

[Technical field]

[0001] The present disclosure relates to a semiconductor manufacturing apparatus and is applicable, for example, to a die bonder equipped with a coating device. [Background technology]

[0002] As one step in the manufacturing process of a semiconductor device, a die separated from a wafer is picked up and bonded to a member to which a paste has been applied. Here, the paste is a liquid adhesive, such as a resin paste or solder. The paste is ejected from a nozzle at the tip of a syringe, and the paste is applied according to the trajectory (application pattern) of the nozzle (for example, JP 2020-4812 A). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2020-4812 A Summary of the Invention [Problem to be solved by the invention]

[0004] Depending on the trajectory of the nozzle, the applied paste may adhere to the nozzle.

[0005] The present disclosure provides a technique capable of reducing adhesion of applied paste to a nozzle. Other objects and novel features will become apparent from the description of this specification and the accompanying drawings. [Means for solving the problem]

[0006] A brief summary of representative aspects of this disclosure is given below. That is, the semiconductor manufacturing apparatus includes a preform unit and a control device. The preform unit includes a stage for holding a substrate and a nozzle disposed above the stage so as to be movable according to a coating pattern. The control device is configured to, when coating paste by reciprocating along the same path of the coating pattern, make the coating operation on the outward path different from the coating operation on the return path. Effect of the Invention

[0007] According to the present disclosure, it is possible to reduce adhesion of the applied paste to the nozzle. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a top view showing an outline of a die bonder in an embodiment. [Diagram 2] FIG. 2 is a diagram for explaining a schematic configuration when viewed from the direction of arrow A in FIG. [Diagram 3] FIG. 3 is a side view showing an outline of the preform part shown in FIG. [Figure 4] FIG. 4 is a block diagram showing a schematic configuration of a control system of the die bonder shown in FIG. [Diagram 5] FIG. 5 is a flowchart showing a method for manufacturing a semiconductor device using the die bonder shown in FIG. [Figure 6] FIG. 6 is a diagram illustrating the line drawing operation in the center stop mode when applying X-shaped coating to a square tab. [Figure 7] FIG. 7 is a diagram illustrating the line drawing operation in the center non-stop mode when applying X-shaped coating to a square tab. [Figure 8] FIG. 8 is a diagram illustrating the line drawing operation in the center stop mode when coating a rectangular tab. [Figure 9] FIG. 9 is a diagram illustrating a line drawing operation in which the nozzle height is increased at the start of the return pass. [Figure 10] FIG. 10 is a diagram illustrating the line drawing operation in which the nozzle moves up while moving horizontally on the return path. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, the embodiments will be described with reference to the drawings. However, in the following description, the same components are given the same reference numerals, and repeated description may be omitted. Note that, in order to clarify the description, the drawings may show the width, thickness, shape, etc. of each part in a schematic manner compared to the actual embodiment, but these are merely examples and do not limit the interpretation of the present disclosure.

[0010] The configuration of a die bonder as one aspect of semiconductor manufacturing equipment will be described with reference to Figures 1 and 2. Figure 1 is a top view showing an outline of the die bonder in an embodiment. Figure 2 is a diagram showing the outline of the configuration as seen from the direction of arrow A in Figure 1.

[0011] The die bonder 1 broadly comprises a wafer supply unit 10, a pickup unit 20, an intermediate stage unit 30, a preform unit 90, a bonding unit 40, a transport unit 50, a substrate supply unit 60, a substrate unloading unit 70, and a control unit (controller, control device) 80. The Y2-Y1 direction is the front-rear direction of the die bonder 1, the X2-X1 direction is the left-right direction, and the Z1-Z2 direction is the up-down direction. The wafer supply unit 10 is disposed on the front side of the die bonder 1, and the bonding unit 40 is disposed on the rear side.

[0012] The wafer supply section 10 includes a wafer cassette lifter 11, a wafer holder 12, a peeling unit 13, and a wafer recognition camera 14.

[0013] A wafer cassette lifter 11 moves a wafer cassette (not shown) in which a plurality of wafer rings WR are stored up and down to the wafer transport height. A wafer correction chute (not shown) aligns the wafer rings WR supplied from the wafer cassette lifter 11. A wafer extractor (not shown) removes the wafer rings WR from the wafer cassette and supplies them to the wafer holder 12, or removes them from the wafer holder 12 and stores them in the wafer cassette.

[0014] A wafer W is adhered (attached) onto a dicing tape DT, and the wafer W is divided into a plurality of dies D. The dicing tape DT is held by a wafer ring WR. The wafer W is, for example, a semiconductor wafer or a glass wafer, and the dies D are, for example, semiconductor chips, glass chips, or MEMS (Micro Electro Mechanical Systems).

[0015] The wafer holder 12 is moved in the X1-X2 and Y1-Y2 directions by an XY table and a drive unit (not shown), and moves the die D to be picked up to the position of the peeling unit 13. The wafer holder 12 rotates the wafer ring WR in the XY plane by a drive unit (not shown). The peeling unit 13 is moved in the Z1-Z2 directions by a drive unit (not shown). The peeling unit 13 peels the die D from the dicing tape DT.

[0016] The wafer recognition camera 14 confirms the pick-up position of the die D to be picked up from the wafer W and inspects the surface of the die D.

[0017] The pickup unit 20 has a pickup head 21 and a Y drive unit 23. The pickup head 21 is provided with a collet 22 that suction-holds the peeled die D at its tip. The pickup head 21 picks up the die D from the wafer supply unit 10 and places it on the intermediate stage 31. The Y drive unit 23 moves the pickup head 21 in the Y1-Y2 direction. The pickup unit 20 has each drive unit (not shown) that raises and lowers, rotates, and moves the pickup head 21 in the X1-X2 direction.

[0018] The intermediate stage unit 30 has an intermediate stage 31 on which the die D is placed, and a stage recognition camera 34 for recognizing the die D on the intermediate stage 31. The intermediate stage 31 has a suction hole that adsorbs the placed die D. The placed die D is temporarily held on the intermediate stage 31.

[0019] The preform unit 90 has a syringe 91, a drive unit 93, a preform camera 94 as an imaging device, and a preform stage 96. The syringe 91 applies paste to the substrate S that has been transported to the preform stage 96 by the transport unit 50. The drive unit 93 moves the syringe 91 in the X1-X2 direction, the Y1-Y2 direction, and the Z1-Z2 direction. The substrate S is, for example, a wiring board, a lead frame formed of a thin metal plate, a glass substrate, or the like.

[0020] The preform camera 94 grasps the position of the paste applied to the substrate S by the syringe 91. The preform stage 96 rises when applying the paste to the substrate S, and supports the substrate S from below. The preform stage 96 has a suction hole (not shown) for vacuum suctioning the substrate S, and can fix the substrate S in place.

[0021] The bonding section 40 has a bond head 41, a Y drive section 43, a substrate recognition camera 44, and a bond stage 46. The bond head 41 is provided with a collet 42 that suction-holds the die D at its tip. The Y drive section 43 moves the bond head 41 in the Y1-Y2 direction. The substrate recognition camera 44 captures an image of a position recognition mark (not shown) of a package area P of the substrate S to recognize the bond position. Here, the substrate S has a plurality of product areas (hereinafter referred to as package areas P) that will eventually become one package. A position recognition mark is provided for each package area P. When the die D is placed on the substrate S, the bond stage 46 is raised and supports the substrate S from below. The bond stage 46 has a suction port (not shown) for vacuum-suctioning the substrate S, and can fix the substrate S. The bond stage 46 has a heating section (not shown) for heating the substrate S. The bonding section 40 has various drive sections (not shown) for raising and lowering the bond head 41, rotating it, and moving it in the X1-X2 directions.

[0022] With this configuration, the bond head 41 corrects the pick-up position and posture based on the imaging data of the stage recognition camera 34, and picks up the die D from the intermediate stage 31. Then, based on the imaging data of the board recognition camera 44, the bond head 41 bonds (places and adheres) the die D onto the package area P of the transported board S to which paste has been applied.

[0023] The transport section 50 has a transport claw 51 that grips and transports the substrate S, and a pair of transport lanes 52 along which the substrate S moves. The substrate S moves in the X1-X2 direction by driving a nut (not shown) of the transport claw 51 provided on the transport lane 52 by a ball screw (not shown) provided along the transport lane 52. With this configuration, the substrate S moves from the substrate supply section 60 along the transport lane 52 to the bonding position, and after bonding, moves to the substrate unloading section 70 and hands the substrate S over to the substrate unloading section 70.

[0024] The substrate supplying section 60 removes the substrate S, which has been stored in the transport jig and carried in, from the transport jig and supplies it to the transporting section 50. The substrate unloading section 70 stores the substrate S transported by the transporting section 50 in the transport jig.

[0025] The control system of the die bonder 1 will be described with reference to Fig. 4. Fig. 4 is a block diagram showing a schematic configuration of the control system of the die bonder shown in Fig. 1.

[0026] The control system 8 includes a control unit 80, a drive unit 86, a signal unit 87, and an optical system 88. The control unit 80 is broadly divided into a control and calculation unit 81 mainly composed of a CPU (Central Processing Unit), a storage unit 82, an input / output unit 83, a bus line 84, and a power supply unit 85. The storage unit 82 includes a main storage unit 82a and an auxiliary storage unit 82b. The main storage unit 82a is composed of a RAM (Random Access Memory) that stores processing programs and the like. The auxiliary storage unit 82b is composed of an HDD (Hard Disk Drive) or SSD (Solid State Drive) that stores control data, image data, and the like required for control.

[0027] The input / output device 83 includes a monitor 83a for displaying the device status and information of the die bonder 1, a touch panel 83b for inputting an operator's instruction, a mouse 83c for operating the monitor 83a, and an image capture device 83d for capturing image data from an optical system 88. The input / output device 83 further includes a motor control device 83e and an I / O signal control device 83f. The motor control device 83e controls a drive unit 86 including the XY table of the wafer supply unit 10 and the ZY drive shaft of the bond head table of the bonding unit 40. The I / O signal control device 83f captures signals from a signal unit 87 and controls the signal unit 87. The signal unit 87 includes various sensors, switches and volumes for controlling the brightness of a lighting device, etc. The control / arithmetic device 81 captures necessary data via a bus line 84, performs calculations, and transmits information to the monitor 83a and the like, as well as to control the pickup head 21 and the like.

[0028] The control and calculation device 81 stores image data captured by the optical system 88 in the storage device 82 via the image capture device 83d. The optical system 88 includes the wafer recognition camera 14, the stage recognition camera 34, the substrate recognition camera 44, and the preform camera 94. The cameras used in the optical system 88 convert light intensity and color into numerical values. The control and calculation device 81 performs positioning of the die D and substrate S, inspection of the paste application pattern, and surface inspection of the die D and substrate S by software programmed based on the stored image data. The control and calculation device 81 drives the drive unit 86 via the motor control device 83e by software based on the calculated positions of the die D and substrate S. Through this process, the control and calculation device 81 performs positioning of the die D on the wafer W, and operates the drive units of the wafer supply unit 10, the pickup unit 20, and the bonding unit 40 to bond the die D onto the package area P of the substrate S.

[0029] A bonding process (a method for manufacturing a semiconductor device), which is one of the manufacturing processes for a semiconductor device using the die bonder 1, will be described with reference to Fig. 5. Fig. 5 is a flowchart showing a method for manufacturing a semiconductor device using the die bonder shown in 1. In the following description, the operation of each part constituting the die bonder 1 is controlled by a control unit 80.

[0030] (Wafer loading: process S1) The wafer cassette containing the wafer ring WR is loaded into wafer cassette lifter 11. The loaded wafer ring WR is then supplied (carried into) wafer holder 12.

[0031] (Substrate loading: Process S2) The transport jig storing the substrate S is inserted into the substrate supply section 60. In the substrate supply section 60, the substrate S stored in the transport jig is removed from the transport jig. Then, the substrate S is supplied (carried in) to the preform section 90 via the transport section 50.

[0032] (Pickup: Process S3) After step S1, the wafer holder 12 is moved so that the desired die D can be picked up from the dicing tape DT. The die D is photographed by the wafer recognition camera 14, and the die D is positioned and its surface inspected based on the image data acquired by photographing. The image data is processed to calculate the amount of deviation (X, Y, and θ directions) of the die D on the wafer holder 12 from the die position reference point of the die bonder, and the die D is positioned. Note that the die position reference point is previously held at a predetermined position of the wafer holder 12 as the initial setting of the device. The image data is processed to inspect the surface of the die D.

[0033] The positioned die D is peeled off from the dicing tape DT by the peeling unit 13 and the pick-up head 21. The die D peeled off from the dicing tape DT is attracted to and held by a collet 22 provided on the pick-up head 21, and is transported to and placed on the intermediate stage 31.

[0034] The die D on the intermediate stage 31 is photographed by the stage recognition camera 34, and the positioning and surface inspection of the die D are performed based on image data acquired by photographing. The image data is processed to calculate the amount of deviation (X, Y, and θ directions) of the die D on the intermediate stage 31 from the die position reference point of the die bonder 1, and positioning is performed. Note that the die position reference point is previously held at a predetermined position of the intermediate stage 31 as the initial setting of the device. The image data is processed to perform surface inspection of the die D.

[0035] The pickup head 21 that transported the die D to the intermediate stage 31 is returned to the wafer supply unit 10. The next die D is peeled off from the dicing tape DT according to the above-mentioned procedure, and thereafter, the dies D are peeled off one by one from the dicing tape DT according to the same procedure.

[0036] (Preform: Process S4) After step S2, the substrate S is transported to the preform stage 96 by the transport unit 50. The surface of the substrate S before application is photographed by the preform camera 94, and the surface to which the paste is to be applied is confirmed based on the image data acquired by photographing. If there is no problem with the surface to be applied, the position of the substrate S supported by the preform stage 96 where the paste is to be applied is confirmed and positioned. Positioning is performed by pattern matching or the like.

[0037] The paste is ejected from a nozzle 92 (see FIG. 3) at the tip of a syringe 91, and applied to the package area P of the substrate S. The application operation will be described in detail later.

[0038] The applied paste is photographed by the preform camera 94. Whether the paste has been applied accurately is confirmed based on the image acquired by photographing, and the applied paste is inspected (visual inspection). That is, in the visual inspection, it is confirmed whether the applied paste has been applied in a predetermined amount in a predetermined shape at a predetermined position on the substrate S. The inspection contents include, for example, the presence or absence of paste, the applied area, and the applied shape (excess or shortage, overflow). The inspection is performed by a method of counting the number of pixels after separating the paste area by binarization processing, as well as a method of comparing differences and scores by pattern matching.

[0039] (Bond: Process S5) If there are no problems with the coating, the substrate S is transported to the bond stage 46 by the transport unit 50. The substrate S placed on the bond stage 46 is photographed by the substrate recognition camera 44, and image data is acquired by photographing. The image data is processed to calculate the amount of deviation (X, Y, and θ directions) of the substrate S from the substrate position reference point of the die bonder. Note that the substrate position reference point is previously held at a predetermined position of the bonding unit 40 as the initial setting of the device.

[0040] The suction position of the bond head 41 is corrected based on the deviation amount of the die D on the intermediate stage 31 calculated in step S3, and the die D is suctioned by the collet 42. The bond head 41 that has suctioned the die D from the intermediate stage 31 bonds the die D to a predetermined position of the substrate S supported by the bond stage 46. The substrate recognition camera 44 photographs the die D bonded to the substrate S, and based on the image data acquired by photographing, an inspection is performed to determine whether the die D has been bonded at the desired position, etc.

[0041] After bonding the die D to the substrate S, the bond head 41 is returned to the intermediate stage 31. Following the procedure described above, the next die D is picked up from the intermediate stage 31 and bonded to the substrate S. This is repeated until a die D is bonded to every package area P of the substrate S.

[0042] (Substrate unloading: Process S6) The transfer section 50 transfers the substrate S to which the die D is bonded from the bonding section 40 to the substrate unloading section 70. In the substrate unloading section 70, the substrate S is removed and stored in a transfer jig, and then the substrate S is unloaded. The transfer jig in which the substrate S is stored is unloaded from the die bonder 1.

[0043] As described above, the die D is mounted on the substrate S and is carried out from the die bonder 1. Thereafter, for example, a transport jig storing the substrate S on which the die D is mounted is transported to a wire bonding process, and the electrodes of the die D are electrically connected to the electrodes of the substrate S via Au wires or the like. Then, the substrate S is transported to a molding process, and the die D and the Au wires are sealed with molding resin (not shown), thereby completing a semiconductor package.

[0044] In the case of stacked bonding, following the wire bonding process, a transport jig on which a substrate S on which a die D is mounted is loaded and stored is transported into a die bonder, and the die D is stacked on the die D mounted on the substrate S. Then, after being transported out of the die bonder, the die D is electrically connected to the electrodes of the substrate S via Au wires in a wire bonding process. The dies D above the second stage are peeled off from the dicing tape DT by the above-mentioned method, transported to the bonding section, and stacked on the dies D. After the above process is repeated a predetermined number of times, the substrate S is transported to a molding process, and the multiple dies D and Au wires are sealed with molding resin (not shown) to complete a stacked package.

[0045] The application of the paste to the preform part will be described with reference to Fig. 3. Fig. 3 is a side view showing an outline of the preform part shown in Fig. 1.

[0046] The preform section 90 includes a syringe 91, a drive section 93, a preform camera 94, a syringe holder 95, a preform stage 96, a dispenser 97, and a pipe 98 for supplying air pressure.

[0047] When applying the paste stored in the syringe 91 to the substrate S, the control unit 80 supplies pressurized gas such as air from an air pulse type dispenser 97 from above the syringe 91 for a certain period of time, causing a predetermined amount of paste to be discharged from the nozzle 92. With the nozzle 92 in close proximity to the substrate, the control unit 80 causes the syringe 91 to two-dimensionally scan (drawing operation, line drawing operation) within the XY plane.

[0048] The dispenser 97 includes a compressed air supply port 97a connected to a positive pressure source, a vacuum exhaust port 97b connected to a negative pressure source, an exhaust port 97c for exhausting the compressed air supplied to the syringe, and an air control output port 97d.

[0049] The operation of the dispenser 97 will be described. Compressed air introduced from the compressed air supply port 97a is adjusted to an appropriate pressure by a discharge regulator (not shown) and is sent out from the air control output port 97d via a valve unit (not shown). Inside the air control output port 97d is a pressure sensor 97e for monitoring the output. The compressed air supplied to the syringe 91 is forcibly exhausted from the exhaust port 97c via a valve unit (not shown). In addition, when not being discharged, it is necessary to supply a weak vacuum so that dripping does not occur due to the weight of the paste. This vacuum is achieved by making the compressed air from the compressed air supply port 97a into an appropriate pressure (negative pressure) via a vacuum regulator (not shown) and discharging it from the vacuum exhaust port 97b. This negative pressure is controlled by a valve unit (not shown) and is connected to the air control output port 97d. The discharge pressure can be measured by a pressure signal (PRS) output by the dispenser 97. The discharge time can be measured by measuring a discharge signal (DSC) output by the dispenser 97.

[0050] The paste ejection process will be described. The paste is stored in a syringe 91. First, the driving unit 93 lowers the syringe holder 95 in response to an instruction from the control unit 80, so that the tip of the nozzle 92 descends from a relatively high position and reaches a predetermined height (nozzle height (Hn)) from the upper surface of the substrate S at the ejection start timing. The nozzle height (Hn) is, for example, 100 to 200 μm. Here, when compressed air is supplied from the dispenser 97 through the piping 98 in response to an instruction from the control unit 80, the air pressure in the syringe 91 increases rapidly and ejection starts gradually. In synchronization with this, the drawing operation starts. That is, specifically, the driving unit 93 moves the syringe holder 95 in response to an instruction from the control unit 80, so that the nozzle 92 moves horizontally in a two-dimensional manner. The nozzle 92 generally returns to the writing start position and the drawing operation ends. At the same time, when the supply of compressed air from dispenser 97 is stopped by a command from control unit 80, the air pressure in syringe 91 drops rapidly, but the discharge gradually weakens and stops. Almost at the same time as the discharge stops, drive unit 93 raises nozzle 92 by a command from control unit 80.

[0051] The line drawing operation will be described with reference to Figs. 6 to 8. For example, Figs. 6 to 8 show the case of a rectangular tab. Fig. 6 is a diagram explaining the line drawing operation in the center stop mode when applying X-shaped coating to a square tab. Fig. 7 is a diagram explaining the line drawing operation in the center non-stop mode when applying X-shaped coating to a square tab. Fig. 8 is a diagram explaining the line drawing operation in the center stop mode when applying to a rectangular tab.

[0052] The line drawing operation starts from the center C of the application pattern and returns to the center C. In other words, the application start point and end point are the same position. The line drawing operation shown in Fig. 6 and Fig. 8 is a center stop mode in which the operation stops at the center C, and the line drawing operation shown in Fig. 7 is a center non-stop mode in which the operation does not stop at the center. In the center stop mode operation, the nozzle 92 moves from the center C to the outer points O1 to O4 while ejecting paste, and then returns to the center C, repeating this process. In the figures, the movement to the outer points O1 to O4 and the return to the center C are depicted as passing through different positions, but they actually pass through the same position.

[0053] In the line drawing operation shown in FIG. 6, first, as shown by the arrow (a), the robot moves from the center C to the outer point O1, and as shown by the arrow (b), returns from the outer point O1 to the center C and stops. Next, as shown by the arrow (e), the robot moves from the center C to the outer point O3, and as shown by the arrow (f), returns from the outer point O3 to the center C and stops. Next, as shown by the arrow (c), the robot moves from the center C to the outer point O2, and as shown by the arrow (d), returns from the outer point O2 to the center C and stops. Finally, the robot moves from the center C to the outer point O4, as shown by the arrow (g), and returns from the outer point O4 to the center C and stops, as shown by the arrow (h).

[0054] In the line drawing operation shown in Fig. 7, first, as shown by arrow (a), the robot moves from the center C to an outer point O1, then, as shown by arrow (b), moves from the outer side back to the center C without stopping, and moves to the opposite outer point O2. Next, as shown by arrow (c), the robot moves from the outer point O2 back to the center C without stopping, and as shown by arrow (d), moves from the center C to an outer point O3, and as shown by arrow (e), moves from the outer point O3 back to the center C without stopping, and moves to the opposite outer point O4. As shown by arrow (f), the robot returns from the outer point O4 to the center C and stops.

[0055] In the line drawing operation shown in FIG. 8, first, as shown by the arrow (a), the robot moves from the center C to the outer point C1, and then, as shown by the arrow (b), moves from the point C1 to the outer point O1. Then, as shown by the arrow (c), the robot returns from the outer point O1 to the point C1. Then, as shown by the arrow (d), the robot moves from the point C1 to the outer point O2, and then, as shown by the arrow (e), the robot returns from the point C1 to the center C and stops. Then, as shown by the arrow (f), the robot moves from the center C to the outer point C2, and then, as shown by the arrow (g), the robot moves from the point C2 to the outer point O3, and then, as shown by the arrow (h), the robot returns from the outer point O3 to the point C2, and then, as shown by the arrow (i), the robot returns from the outer point O3 to the point C2. Then, as shown by the arrow (j), the robot moves from the point C2 to the outer point O4, and then, as shown by the arrow (k), the robot returns from the outer point O4 to the point C2. Finally, as indicated by arrow (l), it returns from point C2 to center C and stops.

[0056] In a line drawing operation, for example, when moving back and forth along the same path at the same height, on the return path (for example, when returning to center C), the applied paste may adhere to the tip of nozzle 92. When moving to the next package area P after paste application in one package area P is completed, paste may still scatter even if a thread cutting operation is performed to prevent the paste attached to the tip of nozzle 92 from dripping or scattering around.

[0057] Therefore, in the embodiment, different coating operations are performed on the forward and return passes, and a line drawing operation is performed according to the following (1) or (2). (1) Change in nozzle height between forward and backward passes (2) Change in paste application amount between forward and return passes

[0058] (1) Change in nozzle height between forward and backward passes The nozzle height when moving from the outside to the center C (return path) is set higher than the nozzle height when moving from the center C to the outside (outward path). This makes it possible to reduce the adhesion of the paste applied on the forward path to the tip of the nozzle 92 on the return path.

[0059] (1-1) The nozzle rises straight up at the turning point (starting the return trip) This will be explained with reference to Figures 6 and 9. Figure 9 is a diagram for explaining the line drawing operation in which the nozzle height is increased at the start of the return pass.

[0060] First, in the line drawing operation indicated by the arrow (a) in Figure 6, as shown in Figure 9, the tip of the nozzle 92 moves from the center C to an outer point O1 at a first predetermined height (H1), and then rises to a second predetermined height (H2) at the outer point O1.

[0061] In the line drawing operation indicated by the arrow (b) in FIG. 6, as shown in FIG. 9, the tip of the nozzle 92 returns from the outer point O1 to the center C at a second predetermined height, and then descends to a first predetermined height at the center C and stops.

[0062] In the line drawing operation indicated by the arrow (c) in FIG. 6, as shown in FIG. 9, the tip of the nozzle 92 moves from the center C to an outer point O2 at a first predetermined height, and then rises to a second predetermined height at the outer point O2.

[0063] In the line drawing operation indicated by the arrow (d) in FIG. 6, as shown in FIG. 9, the tip of the nozzle 92 returns from the outer point O2 to the center C at a second predetermined height, and then descends to a first predetermined height at the center C and stops.

[0064] In the pulling motion indicated by the arrow (e) in FIG. 6, the tip of the nozzle 92 moves from the center C to an outer point O3 at a first predetermined height, and then rises to a second predetermined height at the outer point O3.

[0065] In the pulling operation indicated by the arrow (f) in FIG. 6, the tip of the nozzle 92 returns from the outer point O3 to the center C at the second predetermined height, and then descends to the first predetermined height at the center C and stops.

[0066] In the pulling operation indicated by the arrow (g) in FIG. 6, the tip of the nozzle 92 moves from the center C to an outer point O4 at a first predetermined height, and then rises to a second predetermined height at the outer point O4.

[0067] 6, the tip of the nozzle 92 returns from the outer point O4 to the center C at the second predetermined height. When application is completed, the nozzle 92 does not descend but continues to rise.

[0068] Here, the first predetermined height is a height at which the height of the paste applied when the nozzle 92 moves on the outward path does not reach the tip of the nozzle 92. The second predetermined height is a height at which the height of the paste applied when the nozzle 92 moves on the reciprocating path does not reach the tip of the nozzle 92. The second predetermined height is higher than the first predetermined height.

[0069] (1-2) The nozzle moves horizontally as it ascends on the return trip The following will be explained with reference to Figures 6 and 10. Figure 10 is a diagram for explaining the line drawing operation in which the nozzle moves up while moving horizontally on the return path.

[0070] First, in the line drawing operation indicated by the arrow (a) in FIG. 6, as shown in FIG. 10, the tip of the nozzle 92 moves from the center C to an outer point O1 at a first predetermined height (H1).

[0071] In the line drawing operation indicated by the arrow (b) in Figure 6, as shown in Figure 10, the tip of the nozzle 92 moves from the outer point O1 to the center C, rises and returns to a second predetermined height (H2) at the center C, and then descends to a first predetermined height at the center C and stops.

[0072] In the line drawing operation indicated by the arrow (c) in FIG. 6, as shown in FIG. 10, the tip of the nozzle 92 moves from the center C to an outer point O2 at a first predetermined height.

[0073] In the line drawing operation indicated by the arrow (d) in FIG. 6, as shown in FIG. 10, the tip of the nozzle 92 moves from the outer point O2 to the center C, rises and returns to a second predetermined height at the center C, and then falls to a first predetermined height at the center C and stops.

[0074] In the line drawing operation indicated by the arrow (e) in FIG. 6, the tip of the nozzle 92 moves from the center C to an outer point O3 at a first predetermined height.

[0075] In the line drawing operation indicated by the arrow (f) in FIG. 6, the tip of the nozzle 92 moves from the outer point O3 to the center C, rises and returns to a second predetermined height at the center C, and then falls to a first predetermined height at the center C and stops.

[0076] In the line drawing operation indicated by the arrow (g) in FIG. 6, the tip of the nozzle 92 moves from the center C to an outer point O4 at a first predetermined height.

[0077] In the line drawing operation indicated by the arrow (h) in FIG. 6, the tip of the nozzle 92 moves from the outer point O4 to the center C, and rises to a second predetermined height at the center C and stops there.

[0078] Here, the first predetermined height is a height at which the height of the paste applied when the nozzle 92 is moved on the outbound path does not reach the tip of the nozzle 92. The second predetermined height is a height at which the height of the paste applied when the nozzle 92 is moved on the reciprocating path does not reach the tip of the nozzle 92. The height of the nozzle 92 on the return path is higher than the height of the paste applied at any position on the return path. The second predetermined height is higher than the first predetermined height.

[0079] (2) Change in paste application amount between forward and return passes The amount of paste applied when the nozzle 92 moves from the center C to the outside (outward path) is made smaller than the amount of paste applied when the nozzle 92 moves from the outside to the center C (return path). In other words, by lowering the height of the paste applied on the outward path, it is possible to reduce adhesion of the applied paste to the tip of the nozzle 92 on the return path.

[0080] (2-1) Change in movement speed For example, the moving speed of the nozzle 92 on the outward path is set faster than the moving speed on the return path. Here, the paste ejection pressure may be the same or different on the outward path and the return path. This will be described with reference to FIG.

[0081] In the line drawing operation indicated by the arrow (a) in FIG. 6, the nozzle 92 moves from the center C to the outer point O1 at a first predetermined speed, and in the line drawing operation indicated by the arrow (b) in FIG. 6, the nozzle 92 moves from the outer point O1 to the center C at a second predetermined speed.

[0082] In the drawing operation indicated by arrow (c) in FIG. 6, the nozzle 92 moves from the center C to an outer point O2 at a first predetermined speed, and in the drawing operation indicated by arrow (d) in FIG. 6, the nozzle 92 moves from the outer point O2 to the center C at a second predetermined speed.

[0083] In the drawing operation indicated by arrow (e) in FIG. 6, the nozzle 92 moves from the center C to an outer point O3 at a first predetermined speed, and in the drawing operation indicated by arrow (f) in FIG. 6, the nozzle 92 moves from the outer point O3 to the center C at a second predetermined speed.

[0084] In the drawing operation indicated by arrow (g) in FIG. 6, the nozzle 92 moves from the center C to an outer point O4 at a first predetermined speed, and in the drawing operation indicated by arrow (h) in FIG. 6, the nozzle 92 moves from the outer point O4 to the center C at a second predetermined speed.

[0085] Here, the height of the applied paste when the nozzle 92 reciprocates at the second predetermined speed is set to a height that reaches the tip of the nozzle 92, and the first predetermined speed is set to be faster than the second predetermined speed. As a result, the amount of paste applied on the outgoing passes (a), (c), (e), and (g) is less than the amount of paste applied on the return passes (b), (d), (f), and (h), and the height of the applied paste does not reach the tip of the nozzle 92.

[0086] (2-2) Changing the discharge pressure For example, the discharge pressure of the paste on the outward path is set lower than the discharge pressure on the return path. Here, the moving speed of the nozzle 92 may be the same on the outward path and the return path, or may be different. This will be described with reference to FIG.

[0087] In the line drawing operation indicated by the arrow (a) in Figure 6, as the nozzle 92 moves from the center C to the outer point O1, paste is ejected at a first predetermined ejection pressure, and in the line drawing operation indicated by the arrow (b) in Figure 6, as the nozzle 92 moves from the outer point O1 to the center C, paste is ejected at a second predetermined ejection pressure.

[0088] In the line drawing operation indicated by the arrow (c) in Figure 6, when the nozzle 92 moves from the center C to the outer point O2, paste is ejected at a first predetermined ejection pressure, and in the line drawing operation indicated by the arrow (d) in Figure 6, when the nozzle 92 moves from the outer point O2 to the center C, paste is ejected at a second predetermined ejection pressure.

[0089] In the line drawing operation indicated by arrow (e) in Figure 6, when the nozzle 92 moves from the center C to the outer point O3, paste is ejected at a first predetermined ejection pressure, and in the line drawing operation indicated by arrow (f) in Figure 6, when the nozzle 92 moves from the outer point O3 to the center C, paste is ejected at a second predetermined ejection pressure.

[0090] In the line drawing operation indicated by arrow (g) in Figure 6, when the nozzle 92 moves from the center C to the outer point O4, paste is ejected at a first predetermined ejection pressure, and in the line drawing operation indicated by arrow (h) in Figure 6, when the nozzle 92 moves from the outer point O4 to the center C, paste is ejected at a second predetermined ejection pressure.

[0091] Here, the height of the applied paste when the nozzle 92 reciprocates at the second predetermined discharge pressure is set to a height that reaches the tip of the nozzle 92, and the first predetermined discharge pressure is set to be lower than the second predetermined discharge pressure. As a result, the amount of paste applied on the outgoing paths (a), (c), (e), and (g) is less than the amount of paste applied on the return paths (b), (d), (f), and (h), and the height of the applied paste does not reach the tip of the nozzle 92.

[0092] The operation of changing the height (1) may be combined with the operation of changing the moving speed (2-1). The operation of changing the moving speed (2-1) may be combined with the operation of changing the coating pressure (2-2). The operation of changing the height (1) may be combined with the operation of changing the coating pressure (2-2).

[0093] Finally, when returning to the center C, application may be stopped midway and the nozzle 92 may return to the center C. This allows the nozzle 92 to be pulled up without the substrate S being soiled by strings of paste.

[0094] The disclosure made by the present inventors has been specifically described above based on the embodiments, but it goes without saying that the present disclosure is not limited to the above-described embodiments and can be modified in various ways.

[0095] In the embodiment, the line drawing operation in the center stop mode has been described as an example, but the present invention can also be applied to the line drawing operation in the center non-stop mode.

[0096] In the embodiment, an example of a line drawing operation in which application is started from the center of the application pattern has been described, but the present invention is not limited to this, and application may be started from a position other than the center of the application pattern.

[0097] In the embodiment, an example has been described in which an intermediate stage section 30 is provided between the wafer supply section 10 and the bonding section 40, a die D picked up from the wafer supply section 10 by the pick-up head 21 is placed on the intermediate stage 31, and the die D is picked up again from the intermediate stage 31 by the bond head 41 and bonded to the transported substrate S. The die D picked up from the wafer supply section 10 by the bond head 41 may also be bonded to the substrate S. [Explanation of symbols]

[0098] 1. Die bonder (semiconductor manufacturing equipment) 80... Control unit (control device) 90 Preform section 92 Nozzle 96 Preform stage (stage)

Claims

1. a preform section including a stage for holding a substrate and a nozzle disposed above the stage and movable in accordance with a coating pattern; a control device configured to make a coating operation in a forward path different from a coating operation in a return path when applying the paste by going back and forth along the same path of the application pattern; A semiconductor manufacturing apparatus comprising:

2. 2. The semiconductor manufacturing apparatus according to claim 1, The control device is configured to move the nozzle at a predetermined height on the outward path, and to move the nozzle at a height higher than the predetermined height on the return path.

3. 3. The semiconductor manufacturing apparatus according to claim 2, The control device is configured to raise the nozzle at the start of the return path, and to lower the nozzle at the end of the return path when coating a path having a different coating pattern.

4. 3. The semiconductor manufacturing apparatus according to claim 2, The control device is configured to move the nozzle while raising it on the return path, and to lower the nozzle at the end of the return path when coating a path having a different coating pattern.

5. 3. The semiconductor manufacturing apparatus according to claim 2, The control device is further configured to make the amount of paste applied on the outward path different from the amount of paste applied on the return path.

6. 6. The semiconductor manufacturing apparatus according to claim 5, The control device is further configured to make the amount of paste applied on the outward path smaller than the amount of paste applied on the return path.

7. 2. The semiconductor manufacturing apparatus according to claim 1, The control device is configured to make the amount of paste applied on the outward path different from the amount of paste applied on the return path.

8. 8. The semiconductor manufacturing apparatus according to claim 7, The control device is configured to make the amount of paste applied on the outward path smaller than the amount of paste applied on the return path.

9. 8. The semiconductor manufacturing apparatus according to claim 7, The semiconductor manufacturing apparatus is configured such that the control device makes the moving speed of the nozzle on the outward path faster than the moving speed of the nozzle on the return path.

10. 8. The semiconductor manufacturing apparatus according to claim 7, The control device is configured to eject the paste from the nozzle at a predetermined pressure on the outward path, and to eject the paste from the nozzle at a pressure higher than the predetermined pressure on the return path.

11. 11. The semiconductor manufacturing apparatus according to claim 1 , The semiconductor manufacturing apparatus, wherein the outward path is a path that moves from the center of the coating pattern to the outside, and the return path is a path that returns from the outside to the center.

12. The semiconductor manufacturing apparatus according to any one of claims 1 to 10, further comprising: a bond stage for holding the substrate on which the paste is applied; a bond head that bonds a die to the substrate held by the bond stage; A semiconductor manufacturing apparatus comprising:

13. A stage for holding the substrate; a nozzle provided above the stage so as to be movable according to a coating pattern; a control device configured to make a coating operation in a forward path different from a coating operation in a return path when applying the paste by going back and forth along the same path of the application pattern; A coating device comprising:

14. a step of carrying a substrate into a preform section of a semiconductor manufacturing apparatus including a preform section having a stage for holding a substrate and a nozzle movably provided above the stage in accordance with a coating pattern, and a control device configured to, when coating a paste by reciprocating along the same path of the coating pattern, make a coating operation on a forward path different from a coating operation on a return path; a coating step of coating the substrate with a paste by the nozzle; a bonding step of bonding a die to the substrate on which the paste is applied; A method for manufacturing a semiconductor device having the above structure.

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