Film deposition device and film deposition method

Abstract

To provide a technique capable of eliminating static electricity of a substrate before the substrate is in contact with an electrostatic chuck.SOLUTION: A film deposition device for depositing a film of a vapor deposition substance on a substrate adsorbed by an electrostatic chuck comprises a static eliminating device for eliminating static electricity of an adsorption face of the substrate on a transportation path before the substrate is adsorbed by the electrostatic chuck.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to a film formation apparatus and a film formation method for forming a film on a substrate. [Background technology]

[0002] Patent Document 1 discloses a film formation apparatus that performs a film formation process on a substrate attracted to an electrostatic chuck. This film formation apparatus detects a change in electrostatic capacitance between the substrate and the electrostatic chuck, and changes the voltage applied to the electrostatic chuck based on the detected capacitance information. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2022-155114 A Summary of the Invention [Problem to be solved by the invention]

[0004] The substrate may become charged due to a process such as a peeling operation of the mask and the substrate. If an attempt is made to adsorb the substrate to the electrostatic chuck in a charged state, a voltage higher than the predetermined voltage required for adsorption may be required, or a part of the substrate may come into contact with the electrostatic chuck before the voltage is applied. This may cause a delay in the film formation process, an increase in takt time, a decrease in yield, a decrease in production volume, etc. Furthermore, if a static elimination mechanism is provided in the film formation chamber, the size of the film formation apparatus may increase.

[0005] It is preferable to remove electricity from the substrate or the electrostatic chuck before the substrate and the electrostatic chuck come into contact with each other.

[0006] In view of the above-mentioned problems, the present invention provides a technique capable of removing electricity from a substrate at least before the substrate comes into contact with an electrostatic chuck. [Means for solving the problem]

[0007] A film formation apparatus according to one aspect of the present invention is an apparatus for forming a film of a deposition material on a substrate attracted to an electrostatic chuck, comprising: A charge removing unit is provided on a transport path before the substrate is attracted to the electrostatic chuck, and removes electricity from an attracting surface of the substrate. Effect of the Invention

[0008] According to the present invention, the substrate can be de-electrified before the substrate comes into contact with the electrostatic chuck. [Brief description of the drawings]

[0009] [Figure 1] Schematic diagram of a part of a manufacturing line for electronic devices. [Diagram 2] 1 is a schematic diagram of a film forming apparatus according to an embodiment. [Diagram 3] FIG. 2 is a diagram showing a first example of the configuration of a static eliminator in the film forming apparatus according to the embodiment. [Figure 4] FIG. 4 is a diagram showing a second configuration example of a static eliminator in the film forming apparatus according to the embodiment. [Diagram 5] FIG. 4 is a diagram showing a third configuration example of a static eliminator in a film forming apparatus according to an embodiment. [Figure 6] FIG. 11 is a diagram showing a fourth configuration example of a static eliminator in the film forming apparatus according to the embodiment. [Figure 7] FIG. 5 is a diagram showing a fifth example of the configuration of a static eliminator in a film forming apparatus according to an embodiment. [Figure 8] FIG. 6 is a diagram showing a sixth example of the configuration of a static eliminator in a film forming apparatus according to an embodiment. [Figure 9] FIG. 7 is a diagram showing a seventh configuration example of a static eliminator in a film forming apparatus according to an embodiment. [Figure 10] FIG. 8 is a diagram showing an eighth configuration example of a static eliminator in a film forming apparatus according to an embodiment. [Figure 11] FIG. 13 is a diagram showing a schematic diagram of the operation of the base portion and the substrate support portion (Configuration Example 8). [Figure 12] FIG. 9 is a diagram showing a ninth configuration example of a static eliminator in a film forming apparatus according to an embodiment. [Figure 13] FIG. 1 is a diagram showing a configuration example 10 of a static eliminator in a film forming apparatus according to an embodiment. [Figure 14] FIG. 11 is a diagram showing an eleventh configuration example of a static eliminator in a film forming apparatus according to an embodiment. [Figure 15] FIG. 2 is a diagram showing an overall process flow by a film forming apparatus according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, the embodiments will be described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted.

[0011] <Electronic device manufacturing line> Fig. 1 is a schematic diagram showing a part of the configuration of a manufacturing line for electronic devices to which the film forming apparatus of the present invention can be applied. The manufacturing line in Fig. 1 is used, for example, for manufacturing a display panel for an organic EL display device, in which substrates 100 are sequentially transported to a film forming block 301, and an organic EL element is formed on the substrate 100. In Fig. 1, arrow Z indicates the vertical direction (gravity direction), and arrows X and Y indicate horizontal directions perpendicular to each other. Also, in each figure, G indicates ground.

[0012] In the film formation block 301, a plurality of film formation chambers 303a to 303d in which film formation processing is performed on the substrate 100 and a mask storage chamber 305 in which masks before and after use are stored are arranged around a transfer chamber 302 having an octagonal shape in a plan view. A transfer robot 302a for transferring the substrate 100 is arranged in the transfer chamber 302. The transfer robot 302a includes a hand for holding the substrate 100 and an articulated arm capable of moving the hand in the horizontal and vertical directions. In other words, the film formation block 301 is a cluster-type film formation unit in which a plurality of film formation chambers 303a to 303d are arranged so as to surround the transfer robot 302a. When the film formation chambers 303a to 303d are collectively referred to or when they are not distinguished from one another, they are referred to as film formation chambers 303.

[0013] In the transport direction (arrow direction) of the substrate 100, a buffer chamber 306, a swirl chamber 307, and a delivery chamber 308 are disposed on the upstream side and downstream side of the film-forming block 301, respectively. In the manufacturing process, each chamber is maintained in a vacuum state. Although only one film-forming block 301 is illustrated in FIG. 1, the manufacturing line according to this embodiment has a plurality of film-forming blocks 301, and the plurality of film-forming blocks 301 are connected by a connection device composed of the buffer chamber 306, the swirl chamber 307, and the delivery chamber 308. The configuration of the connection device is not limited to this, and may be composed of, for example, only the buffer chamber 306 or the delivery chamber 308.

[0014] The transport robot 302a transports the substrate 100 from the upstream delivery chamber 308 to the transport chamber 302, transports the substrate 100 between the film formation chambers 303, transports the mask between the mask storage chamber 305 and the film formation chamber 303, and transports the substrate 100 from the transport chamber 302 to the downstream buffer chamber 306.

[0015] The buffer chamber 306 is a chamber for temporarily storing the substrates 100 depending on the operating status of the production line. The buffer chamber 306 is provided with a substrate storage shelf, also called a cassette, and a lifting mechanism. The substrate storage shelf has a multi-stage structure capable of storing a plurality of substrates 100 while maintaining the substrates 100 in a horizontal state with the surfaces to be processed (film-forming surfaces) facing downward in the direction of gravity. The lifting mechanism raises and lowers the substrate storage shelf to match the stage where the substrates 100 are carried in or out with the transport position. This allows the buffer chamber 306 to temporarily store and retain a plurality of substrates 100.

[0016] The swirl chamber 307 is equipped with a device for changing the orientation of the substrate 100. In this embodiment, the swirl chamber 307 rotates the orientation of the substrate 100 by 180 degrees using a transport robot 307a provided in the swirl chamber 307. The transport robot 307a includes a hand for holding the substrate 100 and an articulated arm capable of moving the hand in horizontal and vertical directions. The transport robot 307a provided in the swirl chamber 307 rotates 180 degrees while supporting the substrate 100 received in the buffer chamber 306 and delivers it to the delivery chamber 308, whereby the front end and the rear end of the substrate are swapped between the buffer chamber 306 and the delivery chamber 308. As a result, the orientation of the substrate 100 when it is carried into the film formation chamber 303 is the same in each film formation block 301, so that the scanning direction of the evaporation source and the orientation of the mask with respect to the substrate 100 can be made consistent in each film formation block 301. With this configuration, the orientation of the masks placed in the mask storage chambers 305 in each deposition block 301 can be aligned, simplifying mask management and improving usability.

[0017] The control system of the manufacturing line includes a higher-level device 300 that controls the entire line as a host computer, and control devices 14a-14d, 309, and 310 that control each component, and these can communicate with each other via a wired or wireless communication line 300a. The control devices 14a-14d are provided corresponding to the film formation chambers 303a-303d, and control the film formation apparatus 1 described below. When the control devices 14a-14d are collectively referred to or when there is no need to distinguish between them, they are referred to as the control device 14.

[0018] The control device 14 controls the entire film forming apparatus 1. The control device 14 includes a processing unit 1, a storage unit, an input / output interface (I / O), and a communication unit. The processing unit is a processor represented by a CPU, and executes a program stored in the storage unit to control the film forming apparatus 1. The storage unit is a storage device such as a ROM, a RAM, or a HDD, and stores various control information in addition to the program executed by the processing unit. The I / O is an interface that transmits and receives signals between the processing unit and each component of the film forming apparatus 1. The communication unit is a communication device that communicates with the upper device 300 or other control devices 14, 309, 310, etc. via a communication line, and the processing unit receives information from the upper device 300 or transmits information to the upper device 300 via the communication unit. Note that all or a part of the control device 14 or the upper device 300 may be configured with a PLC, an ASIC, or an FPGA.

[0019] The control device 309 controls the transport robot 302a. The control device 310 controls the device in the swirl chamber 307 and the transport robot 307a. The host device 300 transmits information about the substrate 100 and instructions such as transport timing to each of the control devices 14, 309, and 310, and each of the control devices 14, 309, and 310 controls each component based on the received instructions.

[0020] <Overview of the deposition equipment> FIG. 2 is a schematic diagram of a film forming apparatus 1 according to an embodiment. The film forming apparatus 1 provided in the film forming chamber 303 is an apparatus for forming a film of a deposition material on a substrate 100, and forms a thin film of the deposition material in a predetermined pattern through a mask 101. The material of the substrate 100 on which a film is formed in the film forming apparatus 1 can be appropriately selected from materials such as glass, resin, and metal, and a resin layer such as polyimide formed on glass is preferably used. The deposition material is an organic material, an inorganic material (metal, metal oxide, etc.), and the like. The film forming apparatus 1 can be applied to a manufacturing apparatus for manufacturing electronic devices such as display devices (flat panel displays, etc.), thin-film solar cells, and organic photoelectric conversion elements (organic thin-film imaging elements), and optical members, and is particularly applicable to a manufacturing apparatus for manufacturing organic EL panels. In the following description, an example will be described in which the film forming apparatus 1 forms a film on the substrate 100 by vacuum deposition, but the present embodiment is not limited thereto, and can be applied to various film forming methods such as sputtering and CVD.

[0021] The film forming apparatus 1 has a box-shaped vacuum chamber 3 (also simply called a chamber) capable of maintaining a vacuum inside. An internal space 3a of the vacuum chamber 3 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas. In this embodiment, the vacuum chamber 3 is connected to a vacuum pump (not shown). In this specification, "vacuum" refers to a state filled with a gas having a pressure lower than atmospheric pressure, in other words, a reduced pressure state. In the internal space 3a of the vacuum chamber 3, a substrate support unit 6 that supports the substrate 100 in a horizontal position, a mask table 5 that supports a mask 101, a film forming unit 4, a plate unit 9, and an electrostatic chuck 15 are arranged. The mask 101 is a metal mask having an opening pattern corresponding to a thin film pattern to be formed on the substrate 100, and is placed on the mask table 5. The mask table 5 can be replaced with another form of means for fixing the mask 101 at a predetermined position. As the mask 101, a mask having a structure in which a mask foil of a predetermined thickness is welded and fixed to a frame-shaped mask frame can be used. The material of the mask 101 is not particularly limited, but may be a metal with a small thermal expansion coefficient, such as Invar. The film formation process is performed in a state where the substrate 100 is placed on the mask 101 and the substrate 100 and the mask 101 are superimposed on each other.

[0022] The plate unit 9 includes a cooling plate 10 and a magnet plate 11. The cooling plate 10 is suspended below the magnet plate 11 so as to be displaceable in the Z direction relative to the magnet plate 11. The cooling plate 10 has a function of cooling the substrate 100 attracted to the electrostatic chuck 15 during film formation by contacting the electrostatic chuck 15 described later. The cooling plate 10 is not limited to a cooling plate having a water cooling mechanism or the like to actively cool the substrate 100, and may be a plate-like member that does not have a water cooling mechanism or the like but removes heat from the substrate 100 by contacting the electrostatic chuck 15. The magnet plate 11 is a plate that attracts the mask 101 by magnetic force, and is placed on the upper surface of the substrate 100 to improve the adhesion between the substrate 100 and the mask 101 during film formation.

[0023] The cooling plate 10 and the magnetic plate 11 may be omitted as appropriate. For example, when the electrostatic chuck 15 is provided with a cooling mechanism, the cooling plate 10 may not be necessary. In addition, when the electrostatic chuck 15 attracts the mask 101, the magnetic plate 11 may be omitted.

[0024] The film forming unit 4 is composed of a heater, a shutter, an evaporation source driving mechanism, an evaporation rate monitor, etc., and is an evaporation source that deposits an evaporation material onto the substrate 100. More specifically, in this embodiment, the film forming unit 4 is a linear evaporation source in which a plurality of nozzles (not shown) are arranged in the X direction, and an evaporation material is discharged from each nozzle. For example, the linear evaporation source is moved back and forth in the Y direction (depth direction of the device) by an evaporation source moving mechanism (not shown). In this embodiment, the film forming unit 4 is provided in the vacuum chamber 3 in which an alignment process to be described later is performed. However, in an embodiment in which a film forming process is performed in a chamber other than the vacuum chamber 3 in which alignment is performed, the film forming unit 4 is not provided in the vacuum chamber 3.

[0025] The substrate supporting unit 6 supports the peripheral portion of the substrate 100. The substrate supporting unit 6 includes a plurality of base portions 61 and a plurality of substrate supporting portions 62 protruding inward from the plurality of base portions 61. The substrate supporting portions 62 may also be called "receiving claws" or "substrate supporting claws." The base portions 61 are each supported by a support shaft R3. The substrate 100 carried into the film forming apparatus 1 by the transfer robot 302a is supported by the plurality of substrate supporting portions 62.

[0026] In this embodiment, the multiple substrate support parts 62 are composed of leaf springs, and when the substrate 100 supported by the multiple substrate support parts 62 is attracted to the electrostatic chuck 15, the elastic force of the leaf springs can press the peripheral edge of the substrate 100 against the electrostatic chuck 15.

[0027] The electrostatic chuck 15 attracts the substrate 100. In this embodiment, the electrostatic chuck 15 is provided between the substrate supporting unit 6 and the plate unit 9, and is supported by one or more supporting shafts R1. In one embodiment, the supporting shaft R1 is a cylindrical shaft.

[0028] The electrostatic chuck 15 has a structure in which an electric circuit such as a metal electrode is embedded inside a matrix (also called a base) made of a ceramic material. The surface of the electrostatic chuck 15 may be polyimide (resin) or may be anodized. In this embodiment, the electrostatic chuck 15 has a plurality of electrode portions. The electrode portions include an electrode to which a positive (+) voltage is applied and an electrode to which a negative (-) voltage is applied. When a voltage is applied to each electrode, a polarization charge is induced in the substrate 100 through the ceramic matrix, and an electrostatic attraction (electrostatic force) between the substrate 100 and the electrostatic chuck 15 attracts and fixes an attraction surface 100a of the substrate 100 to an attraction surface 150 of the electrostatic chuck 15.

[0029] In addition, the electrostatic chuck 15 has a plurality of openings formed therein, and the measurement units (first measurement unit 7 and second measurement unit 8) described later capture images of alignment marks described later through the plurality of openings to obtain information regarding the relative positional relationship between the substrate 100 and the mask 101.

[0030] The position adjustment unit 20 adjusts the relative position of the substrate 100, the peripheral portion of which is supported by the substrate support unit 6, or the substrate 100, the peripheral portion of which is attracted by the electrostatic chuck 15, and the mask 101. The position adjustment unit 20 adjusts the relative position of the substrate 100 with respect to the mask 101 by displacing the substrate support unit 6 or the electrostatic chuck 15 on the XY plane. That is, the position adjustment unit 20 can be said to be a unit that adjusts the horizontal positional relationship between the mask 101 and the substrate 100. For example, the position adjustment unit 20 can displace the substrate support unit 6 in the X and Y directions and rotate it around an axis in the Z direction. In this embodiment, the position of the mask 101 is fixed and the substrate 100 is displaced to adjust their relative positions, but the mask 101 may be displaced to adjust the position, or both the substrate 100 and the mask 101 may be displaced. For example, the position adjustment unit 20 may displace the substrate support unit 6 by a known configuration such as a motor as a driving source and a ball screw mechanism that converts the driving force of the motor into linear motion.

[0031] The distance adjustment unit 22 adjusts the distance between the electrostatic chuck 15 and the substrate support unit 6 and the mask table 5 by raising and lowering them, and moves the substrate 100 and the mask 101 closer to each other and farther apart in the thickness direction (Z direction) of the substrate 100. In this embodiment, the distance adjustment unit 22 includes a first lift plate 220 that supports the electrostatic chuck 15 via a plurality of support shafts R1 and supports the substrate support unit 6 via a plurality of support shafts R3. The distance adjustment unit 22 raises and lowers the first lift plate 220 to raise and lower the electrostatic chuck 15 and the substrate support unit 6. That is, the distance adjustment unit 22 brings the substrate 100 and the mask 101 closer to each other in the overlapping direction and moves them apart in the opposite direction. The "distance" adjusted by the distance adjustment unit 22 is the so-called vertical distance (or perpendicular distance), and the distance adjustment unit can also be said to be a unit that adjusts the vertical positions of the mask 101 and the substrate 100. For example, the position adjustment unit 20 may displace the first lift plate 220 by a known configuration such as a motor as a drive source and a ball screw mechanism that converts the drive force of the motor into linear motion. The distance adjustment unit 22 also includes an actuator 65 that moves the substrate support unit 6 relative to the first lift plate 220, thereby changing the relative position of the substrate support unit 6 with respect to the electrostatic chuck 15. The measurement units (first measurement unit 7 and second measurement unit 8), the position adjustment unit 20, and the distance adjustment unit 22 adjust the relative positions of the substrate 100 and the mask 101 based on the measurement results of alignment marks formed on the substrate 100 and the mask 101, respectively.

[0032] In the present embodiment, the distance adjustment unit 22 fixes the position of the mask table 5 and moves the substrate supporting unit 6 and the electrostatic chuck 15 to adjust the distance therebetween in the Z direction, but is not limited to this. The positions of the substrate supporting unit 6 or the electrostatic chuck 15 may be fixed and the mask table 5 may be moved to adjust the distance therebetween, or each of the substrate supporting unit 6, the electrostatic chuck 15, and the mask table 5 may be moved to adjust the distance therebetween.

[0033] The plate unit lifting unit 13 lifts and lowers the second lift plate 12 arranged outside the vacuum chamber 3, thereby lifting and lowering the plate unit 9 connected to the second lift plate 12 and arranged inside the vacuum chamber 3. The plate unit 9 is connected to the second lift plate 12 via one or more support shafts R2. In this embodiment, the plate unit 9 is supported by two support shafts R2. The support shafts R2 extend upward from the magnet plate 11 and are connected to the second lift plate 12 through the openings of the upper wall portion 30, the openings of the fixed plate 20a and the movable plate 20b, and the opening of the first lift plate 220. For example, the position adjustment unit 20 may displace the second lift plate 12 using a known configuration such as a motor as a driving source and a ball screw mechanism that converts the driving force of the motor into linear motion.

[0034] The openings in the upper wall 30 of the vacuum chamber 3 through which the support shafts R1 to R3 pass have a size that allows the support shafts R1 to R3 to be displaced in the X and Y directions. To maintain the airtightness of the vacuum chamber 3, bellows or the like are provided in the openings in the upper wall 30 through which the support shafts R1 to R3 pass.

[0035] The measurement units (first measurement unit 7 and second measurement unit 8) measure the positional deviation between the substrate 100, the peripheral portion of which is supported by the substrate supporting unit 6, and the mask 101. In this embodiment, the first measurement unit 7 and the second measurement unit 8 are both imaging devices (cameras) that capture images. The first measurement unit 7 and the second measurement unit 8 are disposed above the upper wall portion 30, and are capable of capturing images of the inside of the vacuum chamber 3 through a window portion (not shown) formed in the upper wall portion 30.

[0036] In this embodiment, alignment marks used for alignment are formed on the substrate 100 and the mask 101. More specifically, the substrate 100 and the mask 101 are each provided with rough alignment marks for performing rough position adjustment and fine alignment marks for performing more accurate position adjustment.

[0037] The first measurement unit 7 is a low-magnification CCD camera (rough camera) having a relatively wide field of view but low resolution, and measures a rough positional deviation between the substrate 100 and the mask 101. For example, two first measurement units 7 are provided so as to capture images, via the opening 152, of rough alignment marks provided near the centers of the short sides of the substrate 100 and the mask 101.

[0038] The second measurement unit 8 is a high-magnification CCD camera (fine camera) having a relatively narrow field of view but high resolution (for example, on the order of several μm), and measures with high precision the positional deviation between the substrate 100 and the mask 101. For example, four second measurement units 8 are provided so as to capture images of fine alignment marks provided at the four corners of the substrate 100 and the mask 101 through the openings 152.

[0039] In this embodiment, after rough positional adjustment between the substrate 100 and the mask 101 is performed based on the measurement results of the first measurement unit 7, precise positional adjustment between the substrate 100 and the mask 101 is performed based on the measurement results of the second measurement unit 8.

[0040] The film forming apparatus 1 of this embodiment has a deposit-up type configuration (a configuration in which the film forming surface of the substrate 100 faces vertically downward during film formation, and the adsorption surface 100a of the substrate 100 faces vertically upward). In the deposit-up type film forming apparatus 1, the back surface (facing vertically upward) of the film forming surface of the substrate 100 is an adsorption surface that is adsorbed to the electrostatic chuck 15, in other words, a contact surface where the electrostatic chuck 15 and the substrate 100 come into contact with each other. In the film forming apparatus 1, the vertically upper surface of the substrate 100 is the adsorption surface 100a, and the vertically lower surface of the substrate 100 is the film forming surface, and the film forming apparatus 1 forms a thin film of a deposition material having a predetermined pattern on the film forming surface of the substrate through a mask 101.

[0041] In this embodiment, the path before the substrate 100 comes into contact with the electrostatic chuck 15 is referred to as the substrate transport path before film formation (hereinafter, simply referred to as the transport path). For example, the path before the substrate 100 is attracted to the electrostatic chuck 15 of the film formation apparatus 1 in the film formation chamber 303 where the first film formation process is performed is the substrate transport path before film formation.

[0042] In the configuration of Fig. 1, for example, a path from a substrate storage shelf provided in the buffer chamber 306 to a path before the substrate 100 is attracted to the electrostatic chuck 15 of the film formation apparatus 1 in the film formation chamber 303 is a substrate transport path before film formation. Note that the substrate transport path before film formation may be a path before the substrate 100 is attracted to the electrostatic chuck 15, and is not limited to the configuration shown in the example of Fig. 1, and may start from a stocker that stores the substrate 100 further upstream than the buffer chamber 306. Note that in this embodiment, the device configuration in the substrate transport path before film formation and each film formation block 301 including the film formation apparatus 1 may be collectively referred to as a film formation system or a film formation apparatus.

[0043] The film forming apparatus of this embodiment includes a static eliminator that eliminates static electricity from the attracting surface 100a of the substrate 100 attracted to the electrostatic chuck 15 on the substrate transport path before film formation.

[0044] <Configuration example 1 of the static eliminator: Example of providing the static eliminator in the transfer chamber 302> 3 is a diagram showing a first configuration example of a static eliminator in the film forming apparatus 1 according to the embodiment. As the first configuration example of the static eliminator, a configuration using a static eliminator (ionizer) 350 that can be used in a vacuum environment will be described. FIG. 3 shows an example of a substrate transport path before film formation in which the static eliminator (ionizer) 350 is provided in a transport chamber 302. Specifically, the example shows a static eliminator (ionizer) 350 provided in a position in front of (near) a gate valve 361 between the film forming chamber 303 and the transport chamber 302.

[0045] The static eliminator (ionizer) 350 is a device that outputs ultraviolet light that induces ionization, and may be, for example, a device that employs an ion generation method using vacuum ultraviolet light (photoionization). The static eliminator (ionizer) 350 can be connected to a vacuum chamber (for example, the transfer chamber 2 in the configuration example 1 of FIG. 3) via a vacuum flange 352. Here, the vacuum flange 352 is a vacuum component that has a sealing function and can connect the vacuum chamber and the static eliminator (ionizer) 350.

[0046] The static eliminator (ionizer) 350 has a vacuum ultraviolet light generation section 351 (light source unit) and an irradiation section 353 that irradiates the vacuum ultraviolet light generated by the vacuum ultraviolet light generation section 351, and the vacuum ultraviolet light 354 is irradiated from the irradiation section 353.

[0047] 3 shows an example in which the charge removal devices (ionizers) 350 are provided on both the upper and lower sides of the transfer chamber 302, but in the case of removing charge from the adsorption surface 100a of the substrate 100 in the deposition-up type film forming apparatus 1, it is sufficient to provide the charge removal device (ionizer) 350 at least on the upper side of the transfer chamber 302. The transfer robot 302a can adjust the irradiation range of the vacuum ultraviolet light 354 by controlling the position in the Z direction (vertical direction) and adjusting the distance between the irradiation unit 353 and the adsorption surface 100a.

[0048] The transport robot 302a moves in the X direction (horizontal direction) to transport the substrate 100 to the film formation chamber 303, whereby the attraction surface 100a of the substrate 100 is irradiated with vacuum ultraviolet light 354 on the substrate transport path before film formation, and the potential (static electricity) charged on the substrate 100 can be eliminated. In order to simultaneously eliminate electricity over a wider irradiation range on the substrate transport path before film formation, a plurality of static eliminators (ionizers) 350 may be provided in the Y direction (perpendicular to the paper surface).

[0049] <Configuration Example 2 of Static Charge Eliminator: Example of Providing Static Charge Eliminator in Buffer Chamber 306> The position where the charge removal device (ionizer) 350 is provided is not limited to the transfer chamber 302, and the vacuum ultraviolet light 354 may be irradiated onto the substrate 100 stored in a stocker for storing the substrate 100 or a substrate storage shelf provided in the buffer chamber 306. In this embodiment, the path of the substrate 100 before it comes into contact with the electrostatic chuck 15 is the substrate transfer path before a film is formed, and therefore the buffer chamber 306 and a stocker for storing the substrate 100 further upstream than the buffer chamber 306 are also included in the substrate transfer path before a film is formed.

[0050] Fig. 4 is a diagram showing a second configuration example of a static eliminator in the film forming apparatus 1 according to the embodiment. As the second configuration example of the static eliminator, Fig. 4 shows an example of a substrate transport path before film formation, in which a static eliminator (ionizer) 350 is provided in a buffer chamber 306. The substrates 100 stored in the substrate storage shelf of the buffer chamber 306 are stored in a horizontal state with the surface to be processed (film formation surface) facing downward in the direction of gravity (vertically downward), so that the adsorption surface 100a of the substrate 100 is on the vertically upper side in Fig. 4.

[0051] In the configuration shown in Figure 4, an example is shown in which a charge removal device (ionizer) 350 is provided on both the upper and lower sides of the transport chamber 302. However, in a deposit-up type film forming apparatus 1, when charge is removed from the adsorption surface 100a of the substrate 100, it is sufficient to provide a charge removal device (ionizer) 350 at least on the upper side of the buffer chamber 306.

[0052] 4, in order to irradiate the vacuum ultraviolet light 354 over a wide area of ​​the substrate 100 in the stored state, a plurality of charge eliminators (ionizers) 350 are provided in the X direction (horizontal direction), but providing a plurality of charge eliminators 350 is not an essential configuration. For example, when the region of the attraction surface 100a of the substrate 100 that requires charge elimination can be eliminated by one charge eliminator (ionizer) 350, at least one charge eliminator (ionizer) 350 may be provided above the buffer chamber 306.

[0053] <Configuration Example 3 of Static Charge Eliminator: Example of Providing Static Charge Eliminator in Swirling Chamber 307> In this embodiment, the path before the substrate 100 contacts the electrostatic chuck 15 is the substrate transport path before film formation, so for example, the swirl chamber 307 and the delivery chamber 308 in FIG. 1 are also included in the substrate transport path before film formation. FIG. 5 is a diagram showing a configuration example 3 of a charge removal device in the film formation apparatus 1 according to the embodiment. As the configuration example 3 of the charge removal device, FIG. 5 shows an example of a charge removal device (ionizer) 350 provided in the swirl chamber 307 as an example of the substrate transport path before film formation. The transport robot 307a in the swirl chamber 307 moves in the X direction (horizontal direction) to transport the substrate 100 to the delivery chamber 308, so that the adsorption surface 100a of the substrate 100 is irradiated with vacuum ultraviolet light 354 on the substrate transport path before film formation, and the potential (static electricity) charged on the substrate 100 can be removed. In order to simultaneously remove static electricity from a wider irradiation range on the substrate transport path before film formation, a plurality of static eliminators (ionizers) 350 may be provided in the Y direction (perpendicular to the paper surface). The location where the static eliminators (ionizers) 350 are provided is not limited to the swirl chamber 307 shown in FIG. 5, and may be the delivery chamber 308.

[0054] 5 shows an example in which the static eliminator (ionizer) 350 is provided on both the upper and lower sides of the swirl chamber 307, as in the configuration shown in FIG 3, but in the case of removing static electricity from the adsorption surface 100a of the substrate 100 in the deposition-up type film forming apparatus 1, it is sufficient to provide the static eliminator (ionizer) 350 at least on the upper side of the swirl chamber 307. The transfer robot 307a can adjust the irradiation range of the vacuum ultraviolet light 354 by controlling the position in the Z direction (vertical direction) and adjusting the distance between the irradiation unit 353 and the adsorption surface 100a.

[0055] <Configuration Example 4 of Static Charge Eliminator: Example of Providing Static Charge Eliminator on Side Wall of Film Forming Apparatus 1> Fig. 6 is a diagram showing a fourth configuration example of a static eliminator in the film forming apparatus 1 according to the embodiment. Fig. 6 shows an example of a substrate transport path before film formation, in which a static eliminator (ionizer) 350 is provided on a side wall of the film forming apparatus 1.

[0056] The substrate 100 is supported by substrate support parts 62 (substrate support claws) that support the peripheral portion of the substrate 100. In this state, the attraction surface 100a of the substrate 100 is not attracted to the electrostatic chuck 15. In this state, the charge removal device (ionizer) 350 is provided on the side wall of the film forming apparatus 1 so as to irradiate the substrate 100 supported by the substrate support parts 62 with vacuum ultraviolet light 354 from the horizontal direction (X direction).

[0057] In this embodiment, the path taken by the substrate 100 before it comes into contact with the electrostatic chuck 15 is the substrate transport path before film formation, so the position within the film formation apparatus 1 where the substrate 100 is placed on the substrate support portion 62 is included in the substrate transport path before film formation.

[0058] As shown in Configuration Examples 1 to 4, the charge on the attraction surface 100a of the substrate 100 can be removed by irradiating the substrate 100 (attraction surface 100a) with vacuum ultraviolet light 354 using a static eliminator (ionizer) 350.

[0059] <Configuration example 5 of static eliminator: Example using static electricity dissipative material: Projection shape> In the configuration examples 1 to 4, the configurations using the static eliminator (ionizer) 350 have been described, but the configuration of the static eliminator is not limited to these examples. For example, a substance having static electricity diffusion properties may be used. A substance having static electricity diffusion properties is a substance that has the property of diffusing an electrified charge (static electricity diffusion property). Here, having "static electricity diffusion properties" means that the surface resistance value (Rs) measured based on the provisions of IEC International Electrotechnical Commission 61340-5-1 and 5-2 is 1×10 4 Ω or more, 1×10 11 A material has a surface resistance value of less than Ω. This range of surface resistance values ​​(Rs) is also called the static electricity dissipative region. Hereinafter, a material having static electricity dissipative properties is also called a static electricity dissipative material.

[0060] As the substance having static electricity diffusion properties, for example, resin (for example, thermosetting resin) or ceramics in the static electricity diffusion region can be used. The static electricity diffusion substance can be molded into various shapes, such as a protrusion shape (pin shape), a sheet shape (plate shape) having a two-dimensional spread, or a roller shape (cylinder shape), so as to easily come into contact with the member to be neutralized (the adsorption surface 100a of the substrate 100).

[0061] 7 is a diagram showing a fifth configuration example of a static eliminator in the film forming apparatus 1 according to the embodiment. As the fifth configuration example of the static eliminator, an example of a protruding (pin-shaped) part formed of a static electricity dissipative material 504 is shown.

[0062] The transfer chamber 302 is provided with a static elimination robot 501 capable of moving (up and down) the static electricity diffusion material 504 in the vertical direction (Z direction). The static electricity elimination robot 501 has a static electricity elimination hand 503 that holds a protruding (pin-shaped) part formed by the static electricity diffusion material 504, and an actuator 502 that moves the static electricity elimination hand 503 in the vertical direction (Z direction). A plurality of protruding (pin-shaped) parts formed by the static electricity diffusion material 504 are two-dimensionally arranged within the holding surface (XY plane) of the static electricity elimination hand 503 so as to contact the adsorption surface 100a of the substrate 100. In this embodiment, the static electricity elimination robot 501 having a protruding (pin-shaped) part formed by the static electricity diffusion material 504 is called a static elimination device. In the configuration shown in FIG. 7, an example is shown in which the static electricity removal robot 501 is provided on the upper side of the transport chamber 302, but this is not limited to this example. For example, the static electricity removal robot 501 may be disposed on the lower side of the transport chamber 302 so as not to interfere with the transport robot 302a.

[0063] 7 shows an example of a substrate transport path before film formation in which a static elimination device (static elimination robot 501) is provided in the transport chamber 302. Specifically, at a position on the substrate transport path before film formation, the static elimination device (static elimination robot 501) operates an actuator 502 to lower a static elimination hand 503 vertically downward. As the static elimination hand 503 descends, a protruding (pin-shaped) part formed of a static electricity dissipative material 504 comes into contact with the adsorption surface 100a of the substrate 100, thereby eliminating the electric potential charged on the adsorption surface 100a of the substrate 100.

[0064] <Example 6 of the static eliminator configuration: Example using static electricity dissipative material: Sheet type> 8 is a diagram showing a sixth configuration example of a static eliminator in the film forming apparatus 1 according to the embodiment. As the sixth configuration example of the static eliminator, an example of a sheet-shaped (plate-shaped) part having a two-dimensional expansion formed from a static electricity dissipative material 504 is shown.

[0065] As in Fig. 7, a static electricity removal robot 501 capable of moving (up and down) a static electricity diffusion material 504 in a vertical direction (Z direction) is provided in the transfer chamber 302. The device configuration of the static electricity removal robot 501 is basically the same as that in Fig. 7, but in a configuration example 6 shown in Fig. 8, a sheet-shaped part formed from the static electricity diffusion material 504 is held by a static electricity removal hand 503 via a sheet holding member 505. The sheet-shaped part formed from the static electricity diffusion material 504 and having a two-dimensional spread is held within the holding surface (XY plane) of the static electricity removal hand 503 so as to be able to come into surface contact with the adsorption surface 100a of the substrate 100.

[0066] 8 shows an example of a substrate transport path before film formation in which a static elimination device (static elimination robot 501) is provided in the transport chamber 302. Specifically, at a position on the substrate transport path before film formation, the static elimination device (static elimination robot 501) operates an actuator 502 to lower a static elimination hand 503 vertically downward. As the static elimination hand 503 descends, a sheet-shaped part having a two-dimensional spread and formed of a static electricity dissipative material 504 comes into contact with the attraction surface 100a of the substrate 100, thereby eliminating the electric potential charged on the substrate 100.

[0067] <Configuration example 7 of static eliminator: Example using static electricity dissipative material: Roller type> 9 is a diagram showing a seventh configuration example of the static eliminator in the film forming apparatus 1 according to the embodiment. As the seventh configuration example of the static eliminator, an example of a roller-shaped (cylindrical) part formed of a static electricity dissipative material 504 is shown.

[0068] As in Figs. 7 and 8, the transfer chamber 302 is provided with a static electricity removal robot 501 capable of moving (up and down) a roller-shaped (cylindrical) part formed from a static electricity diffusion material 504 in a vertical direction (Z direction). The device configuration of the static electricity removal robot 501 is basically the same as that in Figs. 7 and 8, but in a configuration example 7 shown in Fig. 9, the roller-shaped (cylindrical) part formed from a static electricity diffusion material 504 is disposed within a holding surface (XY plane) of a static electricity removal hand 503 so as to be in surface contact with the adsorption surface 100a of the substrate 100. A roller holding member 506 is provided on the holding surface of the static electricity removal hand 503. The roller holding member 506 rotatably holds the roller-shaped (cylindrical) part formed from a static electricity diffusion material 504. A static elimination hand 503 of a static elimination robot 501 holds a roller-shaped (cylindrical) part formed from a static electricity dissipative material 504 via a roller holding member 506 .

[0069] 9 shows an example of a substrate transport path before film formation in which a static elimination device (static elimination robot 501) is provided in the transport chamber 302. Specifically, at a position on the substrate transport path before film formation, the static elimination device (static elimination robot 501) operates an actuator 502 to lower a static elimination hand 503 vertically downward. As the static elimination hand 503 descends, a roller-shaped (cylindrical) part formed of a static electricity dissipative material 504 comes into contact with the attraction surface 100a of the substrate 100, thereby eliminating the electric potential charged on the substrate 100. With a roller-shaped (cylindrical) part formed from electrostatic dissipative material 504 in contact with adsorption surface 100a of substrate 100, transport robot 302a is moved horizontally (X direction), whereby the roller-shaped (cylindrical) part formed from electrostatic dissipative material 504 rotates on adsorption surface 100a of substrate 100, thereby eliminating the electric potential charged on substrate 100.

[0070] In the configuration examples 5 to 7 of the static elimination apparatus described in Figures 7 to 9, examples have been described in which the static elimination robot 501 is provided in the transport chamber 302, but this is not limited to this example, and the static elimination robot 501 may be provided on the substrate transport path before film formation, for example, in the buffer chamber 306, the turning chamber 307, the delivery chamber 308, etc.

[0071] <Configuration Example 8 of Static Electricity Removal Device: Example using Static Electricity Dissipative Material: Substrate Support> In the configuration examples 5 to 7 of the static elimination apparatus, examples have been described in which the static elimination hand 503 of the static elimination robot 501 is provided with a static electricity diffusive material 504. In the configuration example 8 of the static elimination apparatus, an example will be described in which the substrate support part 62 that comes into contact with the film formation surface of the substrate 100 and the substrate support part 63 that comes into contact with the adsorption surface 100a of the substrate 100 are made of a static electricity diffusive material at the periphery of the substrate 100. Figs. 10 and 11 are diagrams showing the configuration example 8 of the static elimination apparatus in the film formation apparatus 1 according to the embodiment.

[0072] 10 and 11, a base portion 61 holds substrate support portions 62 and 63. An actuator 160 moves the base portion 61 in the horizontal direction (X direction). In this embodiment, the substrate support portions 62 and 63, which are made of a static electricity dissipative material, the base portion 61, and the actuator 160 are referred to as a static eliminator.

[0073] 10 shows a film forming apparatus 1 to which configuration example 8 is applied, and the basic configuration is the same as that of the film forming apparatus 1 described in FIG. 2, but differs in that it has a static eliminator (61-63, 161). The base portion 61, the substrate support portions 62, 63, and the actuator 160 are provided as at least a pair on the left and right. The base portion 61, the substrate support portions 62, 63, and the actuator 160 may be further provided in the direction perpendicular to the paper surface so as to surround the peripheral portion of the substrate 100.

[0074] The actuator 160 moves the base portion 61 and the substrate support portions 62, 63 in the horizontal direction relative to the substrate 100 loaded into the vacuum chamber 3 of the film forming apparatus 1. Fig. 11 is a diagram showing a schematic operation of the base portion 61 and the substrate support portions 62, 63 in the static eliminator.

[0075] 11, by operation of the actuator 160, the base portion 61 and the substrate support portions 62, 63 on the left side of the page move in the direction of the arrow S1, thereby coming into contact with the left end of the substrate 100. Also, by operation of the actuator 160, the base portion 61 and the substrate support portions 62, 63 on the left side of the page move in the direction of the arrow S3, thereby moving away from the left end of the substrate 100.

[0076] Similarly, by operation of the actuator 160, the base portion 61 and the substrate support portions 62 and 63 on the right side of the page move in the direction of the arrow S2, thereby coming into contact with the right end of the substrate 100. Also, by operation of the actuator 160, the base portion 61 and the substrate support portions 62 and 63 on the right side of the page move in the direction of the arrow S4, thereby moving away from the right end of the substrate 100.

[0077] The substrate support parts 62, 63, which are made of a static electricity dissipative material, function as a pair of leaf springs (clips). The substrate support part 62 functions as a leaf spring biased vertically upward, and the substrate support part 63 functions as a leaf spring biased vertically downward, and the upper and lower substrate support parts 62, 63 are in contact with each other with the biasing forces of the upper and lower substrate support parts 62, 63 balanced.

[0078] 11, the left and right base portions 61 and the substrate support portions 62, 63 move in the directions of the arrows S1, S2 and come into contact with the ends of the substrate 100. As the movement in the directions of the arrows S1, S2 progresses due to the operation of the actuator 160, the left end of the substrate 100 is sandwiched between the substrate support portions 62, 63 on the left side of the paper, as indicated by the vertical arrows. Similarly, the right end of the substrate 100 is sandwiched between the substrate support portions 62, 63 on the right side of the paper, as indicated by the vertical arrows.

[0079] The left and right substrate support parts 62, 63 are formed from a static electricity dissipative material. The left and right ends of the substrate 100 are sandwiched between the substrate support parts 62, 63, so that the adsorption surface 100a of the substrate 100 comes into contact with the substrate support parts 63. As a component formed from a static electricity dissipative material, the substrate support part 63 comes into contact with the adsorption surface 100a of the substrate 100 when supporting the periphery of the substrate 100. The potential of the adsorption surface 100a of the substrate 100 can be neutralized by the substrate support part 63, which is a static electricity dissipative material, coming into contact with the adsorption surface 100a of the substrate 100.

[0080] In configuration example 8 shown in Figures 10 and 11, an example is shown in which the substrate support parts 62, 63 are formed from a static electricity dissipative material, but in the case of removing static electricity from the adsorption surface 100a, it is sufficient to form at least the substrate support part 63 from a static electricity dissipative material.

[0081] In order to make it easier to sandwich the left and right ends of the substrate 100 between the substrate support parts 62, 63, the ends of the substrate support parts 62, 63 may be tapered. Furthermore, the substrate support parts 62, 63 may be formed into a cross-sectional shape having a curvature, without being limited to a taper. By forming a taper or a curvature at the ends of the substrate support parts 62, 63, it is possible to easily guide the end of the substrate 100 between the substrate support parts 62, 63 along the taper or curvature.

[0082] In configuration example 8, too, by contacting the substrate support portion 63 made of a static electricity dissipative material with the adsorption surface 100a of the substrate 100, the potential of the adsorption surface 100a of the substrate 100 can be neutralized on the substrate transport path before film formation.

[0083] With both ends of the substrate 100 sandwiched between the left and right substrate support parts 62, 63, the actuator 65 moves the base part 61 vertically upward, causing the substrate 100 to move vertically upward, the adsorption surface 100a is adsorbed to the electrostatic chuck 15, the entire surface to be processed of the substrate 100 comes into contact with the mask 101, and the film formation process is performed. After the film formation process is completed, the actuator 65 moves the base part 61 vertically downward, causing the substrate 100 to move vertically downward, and then the actuator 160 moves the left and right substrate support parts 62, 63 in the directions of arrows S3 and S4, causing the substrate 100 to be released.

[0084] According to the film forming apparatus 1 of the present embodiment, the configuration of the charge removing device makes it possible to remove electricity from the attracting surface 100a of the substrate 100 before the substrate 100 and the electrostatic chuck 15 come into contact with each other.

[0085] <Configuration Example 9 of Static Charge Eliminator: Example of Providing Static Charge Eliminator on Side Wall of Film Forming Apparatus 1> Fig. 12 is a diagram showing a configuration example 9 of a static eliminator in the film forming apparatus 1 according to the embodiment. Fig. 12 shows an example in which a static eliminator (ionizer) 350 is provided on a side wall of the film forming apparatus 1 as an example of a substrate transport path before film formation.

[0086] In the configuration example 9, a charge removal device (ionizer) 350 is provided on a side wall of the film forming apparatus 1 so as to irradiate the electrostatic chuck 15 with vacuum ultraviolet light 354 before the substrate 100 is attracted to the electrostatic chuck 15. This configuration example 9 differs from the configuration example 4 (FIG. 6) in that the target to be irradiated with the vacuum ultraviolet light 354 is the electrostatic chuck 15, not the substrate 100.

[0087] The distance adjustment unit 22 raises and lowers the first lift plate 220, thereby raising and lowering the electrostatic chuck 15 and the substrate support unit 6, and adjusts the position in the vertical direction (Z direction) to a position where the electrostatic chuck 15 is within the irradiation range of the charge removal device (ionizer) 350. The position can be adjusted so that the attraction surface 150 of the electrostatic chuck 15, which comes into contact with the attraction surface 100a of the substrate 100, can be decharged. After the alignment of the electrostatic chuck 15 is completed, the charge removal device (ionizer) 350 irradiates the electrostatic chuck 15 with vacuum ultraviolet light 354.

[0088] In the case where the irradiation range from one charge removal device (ionizer) 350 can cover both the electrostatic chuck 15 and the substrate 100, one charge removal device (ionizer) 350 may be provided on the side wall of the film forming apparatus 1. In the configuration example 9 shown in FIG. 12, an example is shown in which the charge removal device (ionizer) 350 common to the configuration example 4 (FIG. 6) is used, but the present invention is not limited to this example, and multiple charge removal devices (ionizers) 350 may be provided on the side wall. That is, a charge removal device (ionizer) 350 (first charge removal device) that irradiates the electrostatic chuck 15 with vacuum ultraviolet light 354, a charge removal device (ionizer) 350 (second charge removal device) that irradiates the substrate 100 (attraction surface 100a) with vacuum ultraviolet light 354, and multiple charge removal devices (ionizers) 350 may be provided.

[0089] In this embodiment, the path before the substrate 100 comes into contact with the electrostatic chuck 15 is defined as the substrate transport path before film formation, so that within the film formation apparatus 1, the position of the electrostatic chuck 15 that is not adsorbing the substrate 100 is included in the substrate transport path before film formation.

[0090] As shown in configuration example 9, by using a charge removal device (ionizer) 350 to irradiate vacuum ultraviolet light 354 onto the electrostatic chuck 15 that is not adsorbing the substrate 100, the electric potential on the adsorption surface 150 of the electrostatic chuck 15 can be removed.

[0091] <Configuration example 10 of static eliminator: Example using static electricity dissipative material: Projection shape> 13 is a diagram showing a configuration example 10 of a static eliminator in the film forming apparatus 1 according to the embodiment. As the configuration example 10 of the static eliminator, an example of a protruding (pin-shaped) part formed of a static electricity dissipative material 504 is shown.

[0092] In configuration example 10, a protrusion-shaped (pin-shaped) part formed from the static electricity dissipative material 504 comes into contact with the adsorption surface 150 of the electrostatic chuck 15. A static electricity removal hand 503 holding a protrusion-shaped (pin-shaped) part formed from the static electricity dissipative material 504 is placed on the transfer robot 302a, and is transferred from the transfer chamber 302 to the film formation chamber 303 (vacuum chamber) by the transfer robot 302a. The static electricity removal hand 503 transferred into the film formation chamber 303 (vacuum chamber) is then raised vertically upward by the transfer robot 302a, and the protrusion-shaped (pin-shaped) part formed from the static electricity dissipative material 504 comes into contact with the adsorption surface 150 of the electrostatic chuck 15.

[0093] When a protrusion-shaped (pin-shaped) part formed from electrostatic dissipative material 504 comes into contact with adsorption surface 150 of electrostatic chuck 15, the electric potential charged on adsorption surface 150 of electrostatic chuck 15 can be neutralized.

[0094] <Configuration example 11 of static eliminator: Example using static electricity dissipative material: Sheet type> 14 is a diagram showing an eleventh configuration example of a static eliminator in the film forming apparatus 1 according to the embodiment. As the eleventh configuration example of the static eliminator, an example of a sheet-shaped (plate-shaped) part having a two-dimensional expansion formed from a static electricity dissipative material 504 is shown.

[0095] In configuration example 11, a sheet-shaped part formed from the static electricity dissipative material 504 comes into contact with the adsorption surface 150 of the electrostatic chuck 15. A static electricity removal hand 503, which holds the sheet-shaped part formed from the static electricity dissipative material 504 via a sheet holding member 505, is placed on the transfer robot 302a and is transferred from the transfer chamber 302 to the film formation chamber 303 (vacuum chamber) by the transfer robot 302a. The static electricity removal hand 503 transferred into the film formation chamber 303 (vacuum chamber) is then raised vertically upward by the transfer robot 302a, and the sheet-shaped part formed from the static electricity dissipative material 504 comes into contact with the adsorption surface 150 of the electrostatic chuck 15.

[0096] When a sheet-shaped part made of the static electricity dissipative material 504 comes into contact with the attraction surface 150 of the electrostatic chuck 15 , the electric potential on the attraction surface 150 of the electrostatic chuck 15 can be removed.

[0097] <Overall process flow by the film forming apparatus 1> 15 is a flowchart showing the overall process flow by the film formation apparatus 1. This flowchart shows an overview of the steps that the film formation apparatus 1 executes on one substrate 100.

[0098] S201 is a pretreatment process. In this process, a charge removal process is performed by a charge removal device (Configuration Examples 1 to 11) as a pretreatment of the film formation process. The film formation device 1 of the present embodiment performs a charge removal process on the substrate 100 and the electrostatic chuck 15 in advance before the substrate 100 and the electrostatic chuck 15 come into contact with each other.

[0099] S202 is an adsorption step. For example, the control device 14 raises the substrate support unit 6 supporting the substrate 100 to a predetermined position. The control device 14 applies a changed voltage to the electrode portion of the electrostatic chuck 15 to generate an adsorption force, and causes the electrostatic chuck 15 to adsorb the substrate 100.

[0100] S203 is an alignment step. The control device 14 lowers the electrostatic chuck 15, which attracts the substrate 100, by the distance adjustment unit 22, so that the substrate 100 approaches the mask 101. Then, the position adjustment unit 20 adjusts the horizontal positions of the substrate 100 and the mask 101.

[0101] S204 is a film forming step. In preparation for this step, the control device 14 brings the substrate 100 and the mask 101 into contact with each other after alignment. Next, the control device 14 lowers the plate unit 9 to bring the substrate 100 and the mask 101 into closer contact with each other by the magnetic force of the magnet plate 11. In this state, the control device 14 causes the film forming unit 4 to deposit the deposition material onto the substrate 100.

[0102] S205 is a peeling process. The control device 14 peels off the substrate 100 from the electrostatic chuck 15 by stopping the application of voltage to the electrode portion of the electrostatic chuck 15. Note that the control device 14 may reduce the voltage applied to the electrode portion to such an extent that the electrostatic chuck 15 cannot maintain the adsorption of the substrate 100 without stopping the application of voltage to the electrode portion.

[0103] S206 is a carrying-out step in which the substrate 100 is carried out of the film forming apparatus by the transfer robot 302a.

[0104] <Other embodiments> The present invention can also be realized by a process in which a program for implementing one or more of the functions of the above-described embodiments is supplied to a system or device via a network or a storage medium, and one or more processors in a computer of the system or device read and execute the program. The present invention can also be realized by a circuit (e.g., ASIC) that implements one or more of the functions.

[0105] The invention is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0106] 1: film forming device, 14: control device, 15: electrostatic chuck, 8: alignment unit, 10: deposition unit (film forming source), 62, 63: substrate support (substrate support claws), 100: substrate, 100a: attraction surface (substrate), 101: mask, 150: attraction surface (electrostatic chuck), 302a: transport robot, 307a: transport robot, 350: static elimination device (ionizer), 501: static elimination device (static elimination robot), 504: static electricity dissipative material

Claims

1. A film forming apparatus for forming a film of a deposition material on a substrate attracted to an electrostatic chuck, comprising: a charge removing means for removing electricity from an attracting surface of the substrate on a transport path before the substrate is attracted to the electrostatic chuck; A film forming apparatus comprising:

2. 2. The film forming apparatus according to claim 1, wherein the charge removing means includes an ionizer that irradiates the attraction surface of the substrate with ultraviolet light that induces ionization.

3. The charge removing means is 1×10 ４ Ω or more, 1×10 １１ 2. The film forming apparatus according to claim 1, wherein a part molded from a substance having electrostatic dissipation properties and a surface resistance of less than Ω is brought into contact with the attraction surface on the transport path to neutralize the charge on the attraction surface.

4. The film forming apparatus according to claim 3, characterized in that the de-electrification means brings a part having a plurality of protrusions or a part having a sheet shape with a two-dimensional extension, which is formed from the substance having electrostatic dissipation properties, into contact with the adsorption surface on the transport path to de-electrify the adsorption surface.

5. The film forming apparatus according to claim 3, characterized in that the static electricity removal means is a part molded from a material having static electricity dissipation properties, and comprises a substrate support means that contacts an adsorption surface of the substrate when supporting the peripheral edge of the substrate.

6. 2. The film forming apparatus according to claim 1, wherein the charge removing means removes electricity from the attracting surface of the electrostatic chuck before the substrate is attracted to the electrostatic chuck.

7. 7. The film forming apparatus according to claim 6, wherein the charge removing means includes an ionizer that irradiates an attracting surface of the electrostatic chuck with ultraviolet light that induces ionization.

8. The charge removing means is 1×10 ４ Ω or more, 1×10 １１ 7. The film forming apparatus according to claim 6, wherein a part molded from a substance having electrostatic dissipation properties and a surface resistance of less than Ω is brought into contact with an attraction surface of the electrostatic chuck to remove electricity from the attraction surface.

9. 9. The film forming apparatus according to claim 8, wherein the static electricity removal means brings a part having a plurality of protrusions or a part having a sheet shape with a two-dimensional expansion, which is formed from the substance having electrostatic dissipation properties, into contact with an adsorption surface of the electrostatic chuck to remove static electricity from the adsorption surface.

10. 2. The film forming apparatus according to claim 1, further comprising an alignment unit that adjusts the relative positions of the substrate and the mask based on a measurement result of alignment marks formed on the substrate and the mask, respectively.

11. 11. The film forming apparatus according to claim 10, wherein the alignment means adjusts the relative positions of the substrate attracted to the electrostatic chuck and the mask.

12. The film forming apparatus is a deposition-up type film forming apparatus, a vertically upper surface of the substrate is the adsorption surface, and a vertically lower surface of the substrate is a film formation surface; 2. The film forming apparatus according to claim 1, wherein a thin film of a deposition material having a predetermined pattern is formed on the film forming surface of the substrate through a mask.

13. A method for forming a film on a substrate attached to an electrostatic chuck using a deposition material, comprising the steps of: a charge removing step of removing electricity from an attracting surface of the substrate by a charge removing means on a transport path before the substrate is attracted to the electrostatic chuck; A film forming method comprising the steps of:

Images