Plurality of light emitting devices and manufacturing method of the plurality of light emitting devices

Abstract

To improve a quality of a light emitted from each light emitting device.SOLUTION: A plurality of light emitting devices contains: a first light emitting device that is provided with a first semiconductor laser element emitting a first color light of which a light emitting peak wavelength is a first wavelength and a first reflection member of which a reflection ratio to the first wavelength is 90% or more; a second light emitting device that is provided with a second semiconductor laser element emitting a second color light of which the light emitting peak wavelength is a second wavelength and a second reflection member of which the reflection ratio to the second wavelength is 90% or more; and a third light emitting device that is provided with a third semiconductor laser element emitting the first color light of which the light emitting peak wavelength is a third wavelength, a fourth conductor laser element emitting a second color light of which the light emitting peak wavelength is a fourth wavelength, and a plurality of third reflection members of which the reflection ratio to the third and fourth wavelengths is 90% or more. The reflection ratio of the third reflection member to a light of the first wavelength is higher than the second reflection member. The reflection ratio of the third reflection member to the light of the second wavelength is higher than that of the first reflection member.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] The present invention relates to a plurality of light emitting devices and a method for manufacturing the plurality of light emitting devices. [Background technology]

[0002] Japanese Patent Application Publication No. 2002-304761 discloses an optical pickup device that includes two semiconductor laser elements that emit light of different wavelengths, and an optical element having a total reflection film onto which the light emitted from the two semiconductor laser elements is incident. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2002-304761 Summary of the Invention [Problem to be solved by the invention]

[0004] An invention is disclosed that solves the problem of improving the quality of light emitted from a light emitting device that includes a plurality of semiconductor laser elements and a plurality of reflecting members. [Means for solving the problem]

[0005] The plurality of light emitting devices disclosed in the embodiment include a first light emitting device, a second light emitting device, and a third light emitting device each having a package with the same outer shape, and a semiconductor laser element and a reflective member disposed in the package, the first light emitting device includes a first package that is the package, a plurality of first semiconductor laser elements that are the semiconductor laser elements, each of which is disposed in the first package and emits light of a first color having an emission peak wavelength of a first wavelength, and a plurality of first reflective members that are the reflective members, each of which is disposed in the first package, has a first light reflective surface provided with a first reflective film having a reflectance of 90% or more at the first wavelength, reflects the light of the first color emitted from the first semiconductor laser element, and the second light emitting device includes a second package that is the package, and a plurality of second semiconductor laser elements that are the semiconductor laser elements, each of which is disposed in the second package, emits light of a second color that is different from the first color and has an emission peak wavelength of a second wavelength, and each of which is disposed in the second package, and has a reflectance of the second wavelength. the third light emitting device has a second light reflecting surface provided with a second reflecting film having a reflectivity of 90% or more and reflects the second color light emitted from the second semiconductor laser element, and a plurality of second reflecting members which are the reflecting members; the third light emitting device comprises a third package which is the package, one or more third semiconductor laser elements which are disposed in the third package and emit the first color having an emission peak wavelength of a third wavelength, and which are the semiconductor laser elements; and one or more fourth semiconductor laser elements; and a plurality of third reflecting members, each of which is arranged in the third package and has a third light reflecting surface provided with a third reflecting film having a reflectance of 90% or more for the third wavelength and the fourth wavelength, the reflecting member reflecting the first color light emitted from the third semiconductor laser element and the reflecting member reflecting the second color light emitted from the fourth semiconductor laser element, wherein the first light emitting device comprises the semiconductor laser element that emits the second color light having an emission peak wavelength at the second wavelength, andthe second light emitting device does not include the semiconductor laser element emitting the second color light having an emission peak wavelength of the fourth wavelength, the second light emitting device does not include the semiconductor laser element emitting the first color light having an emission peak wavelength of the first wavelength and the semiconductor laser element emitting the first color light having an emission peak wavelength of the third wavelength, the reflectance of the third reflective film for the light of the first wavelength is higher than the reflectance of the second reflective film for the light of the first wavelength, and the reflectance of the third reflective film for the light of the second wavelength is higher than the reflectance of the first reflective film for the light of the second wavelength,

[0006] The method of manufacturing a plurality of light emitting devices disclosed in the embodiment includes a method of manufacturing a first light emitting device, a method of manufacturing a second light emitting device, and a method of manufacturing a third light emitting device, in which the method of manufacturing the first light emitting device includes a step of dividing a first base material to manufacture ten or more first reflecting members each having a first reflecting film, and a step of arranging ten or less first semiconductor laser elements and ten or less of the first reflecting members in a first package, and the method of manufacturing the second light emitting device includes a step of dividing a second base material to manufacture ten or more first reflecting members each having a second reflecting film, and a step of arranging ten or less first semiconductor laser elements and ten or less of the first reflecting members in a first package. a method of manufacturing the third light emitting device comprising the steps of: manufacturing ten or more second reflecting members each having a third reflecting film; and arranging ten or less second semiconductor laser elements and ten or less of the second reflecting members in a second package; and a method of manufacturing the third light emitting device comprising the steps of: dividing a third base material to manufacture ten or more third reflecting members each having a third reflecting film; and arranging one or more third semiconductor laser elements, one or more fourth semiconductor laser elements, and ten or less of the third reflecting members in a third package; the first base material, the second base material, and the third base material are base materials formed from the same material; The semiconductor laser element emits a first color light having an emission peak wavelength of a first wavelength, the second semiconductor laser element emits a second color light having an emission peak wavelength of a second wavelength, the third semiconductor laser element emits the first color light having a third wavelength, and the fourth semiconductor laser element emits the second color light having a fourth wavelength, a sum of the number of the one or more third semiconductor laser elements and the number of the one or more fourth semiconductor laser elements is 10 or less, and the first light emitting device emits the second color light having an emission peak wavelength of the second wavelength. the second light emitting device does not include the semiconductor laser element emitting the first color light having an emission peak wavelength at the first wavelength, and the semiconductor laser element emitting the first color light having an emission peak wavelength at the third wavelength, and the reflectance of the third reflective film for the light of the first wavelength is higher than the reflectance of the second reflective film for the light of the first wavelength, and the reflectance of the third reflective film for the light of the second wavelength isThe reflectance of the first reflective film for the light of the second wavelength is higher than that of the first reflective film.

[0007] In at least one of the one or more inventions disclosed in the embodiments, the quality of light emitted from a light emitting device can be improved. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a perspective view of a light emitting device according to an embodiment. [Diagram 2] FIG. 2 is a side view of the light emitting device according to the embodiment. [Diagram 3] FIG. 3 is a cross-sectional view of the light emitting device according to the embodiment taken along line III-III in FIG. [Figure 4] FIG. 4 is a perspective view showing components arranged in the internal space of the light emitting device according to the embodiment. [Diagram 5] FIG. 5 is a top view showing components arranged in the internal space of the light emitting device according to the embodiment. [Figure 6] FIG. 6 is a top view showing a state in which the semiconductor laser element and the protection element are mounted on the submount. [Figure 7] FIG. 7 is a side view showing a state in which the semiconductor laser element and the protective element are mounted on the submount. [Figure 8] FIG. 8 is a perspective view of the package. [Figure 9] FIG. 9 is a cross-sectional view of the package taken along line IX-IX in FIG. [Figure 10] FIG. 10 is a top view of the base body. [Figure 11] FIG. 11 is a bottom view of the base body. [Figure 12] FIG. 12 is a cross-sectional view of the base body taken along the line XII-XII in FIG. [Figure 13] FIG. 13 is a schematic diagram for explaining the positional deviation of light due to the material tolerance of the reflecting member. [Figure 14A]FIG. 14A is a schematic side view illustrating a first step in the manufacturing method of the reflective member. [Figure 14B] FIG. 14B is a schematic side view for illustrating a second step in the manufacturing method of the reflective member. [Figure 14C] FIG. 14C is a schematic perspective view for explaining a second step in the manufacturing method of the reflective member. [Figure 14D] FIG. 14D is a schematic side view illustrating a third step in the manufacturing method of the reflective member. [Figure 14E] FIG. 14E is a schematic perspective view for illustrating a third step in the manufacturing method of the reflective member. [Figure 14F] FIG. 14F is a schematic side view for illustrating a fourth step in the manufacturing method of the reflective member. [Figure 14G] FIG. 14G is a side view seen from a different direction than FIG. 14F, and is a schematic side view for explaining a fourth step in the manufacturing method of the reflective member. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] In this specification and claims, polygons such as triangles and quadrangles are referred to as polygons, including shapes in which the corners of the polygons have been processed by rounding, chamfering, removing corners, rounding, etc. Furthermore, shapes in which processing has been applied not only to the corners (edges of the sides) but also to the middle parts of the sides are also referred to as polygons. In other words, shapes in which partial processing has been applied while leaving the polygon as the base are included in the interpretation of "polygon" described in this specification and claims.

[0010] This is not limited to polygons, but also applies to words expressing specific shapes such as trapezoids, circles, and irregular shapes. The same is true when dealing with each side that forms the shape. In other words, even if the corners or middle part of a side have been processed, the interpretation of "side" includes the processed part. Note that when distinguishing a "polygon" or "side" that has no processing from a processed shape, the word "strict" is added, for example, "strict quadrangle."

[0011] In addition, in this specification or the claims, descriptions such as up and down (upper / lower), left and right, front and back, front and back (front / rear), front and back, etc., merely describe relationships such as relative positions, orientations, and directions, and do not necessarily correspond to the relationships during use.

[0012] In addition, directions such as the X direction, the Y direction, and the Z direction may be indicated by using arrows in the drawings. The directions of these arrows are consistent among multiple drawings relating to the same embodiment. In addition, the direction of the arrows marked with X, Y, and Z in the drawings is the positive direction, and the opposite direction is the negative direction. For example, the direction marked with X at the tip of the arrow is the X direction and the positive direction. In this specification, the direction that is the X direction and the positive direction is referred to as the "positive X direction", and the opposite direction is referred to as the "negative X direction". When referring to the "X direction", it includes both the positive and negative directions. The same applies to the Y and Z directions.

[0013] In addition, in this specification, when an object is specified as "one or more" and the object is described, both the form in which the object is one and the form in which the object is multiple are described together. Thus, the description specifying "one or more" supports any of the following embodiments: an embodiment with one or more objects, an embodiment with at least one object, and an embodiment with multiple objects.

[0014] In addition, in this specification, the description of the "one or each" object is a description that combines a description of one object in an embodiment having one object, a description of one object in an embodiment having multiple objects, and a description of each of the objects in an embodiment having multiple objects. Therefore, the description of the "one or each" object supports all of the following: in an embodiment having one object, this one object has explanatory content; in an embodiment having multiple objects, at least one of these objects has explanatory content; in an embodiment having multiple objects, each of these multiple objects has explanatory content; and in an embodiment having one or multiple objects, all of the objects have explanatory content.

[0015] Furthermore, in this specification, the terms "component" and "part" may be used when explaining components, for example. A "component" refers to an object that is physically handled as a single unit. An object that is physically handled as a single unit can also be said to be an object that is handled as a single part in the manufacturing process. On the other hand, a "part" refers to an object that does not need to be physically handled as a single unit. For example, a "part" is used when referring to a portion of a single component, or when referring to multiple components collectively as a single object.

[0016] The distinction between "component" and "part" above does not indicate any intention to consciously limit the scope of the right in the interpretation of the doctrine of equivalents. In other words, even if there is a component described as a "component" in the scope of the patent claim, this does not mean that the applicant recognizes that treating this component as a single physical unit is essential for the application of the present invention.

[0017] In addition, in this specification or claims, when there are multiple elements of a certain type and each element needs to be expressed separately, the elements may be distinguished by adding "first" or "second" to the beginning of the element. In addition, the objects to be distinguished may differ between this specification and the claims. Therefore, even if the claims describe an element with the same notation as this specification, the object identified by this element may not be the same between this specification and the claims.

[0018] For example, if there are elements in this specification that are distinguished by the notation "first," "second," and "third," and the elements to which "first" and "third" are attached in this specification are described in the claims, the elements may be distinguished by the notation "first" and "second" in the claims from the viewpoint of readability. In this case, the elements to which "first" and "second" are attached in the claims refer to the elements to which "first" and "third" are attached in this specification, respectively. Note that this rule is not limited to elements, and can be applied rationally and flexibly to other objects as well.

[0019] Hereinafter, the embodiment for carrying out the present invention will be described. Furthermore, a specific embodiment for carrying out the present invention will be described with reference to the drawings. Note that the embodiment for carrying out the present invention is not limited to this specific embodiment. In other words, the illustrated embodiment is not the only embodiment in which the present invention can be realized. Note that the size and positional relationship of the members shown in each drawing may be exaggerated for ease of understanding.

[0020] <Embodiment> A plurality of light emitting devices 1 according to an embodiment will be described. FIGS. 1 to 14G are drawings for explaining an exemplary embodiment of a plurality of light emitting devices 1. FIG. 1 is a perspective view of the light emitting device 1. FIG. 2 is a side view of the light emitting device 1. FIG. 3 is a cross-sectional view of the light emitting device 1 taken along the III-III cross-sectional line in FIG. 1. FIG. 4 is a perspective view showing components arranged in the internal space of the light emitting device 1. FIG. 5 is a top view showing components arranged in the internal space of the light emitting device 1. Note that the wiring shown in FIG. 4 is omitted in FIG. 5. FIGS. 6 and 7 are a top view and a side view, respectively, showing a state in which the semiconductor laser element 20 and the protection element 50 are mounted on the submount 30. FIG. 8 is a perspective view of the package 10. FIG. 9 is a cross-sectional view of the package 10 taken along the IX-IX cross-sectional line in FIG. 8. FIG. 10 is a top view of the base 11. FIG. 11 is a bottom view of the base 11. FIG. 12 is a cross-sectional view of the base 11 taken along the XII-XII cross-sectional line in FIG. 10. Fig. 13 is a schematic diagram for explaining the positional deviation of light due to the material tolerance of the reflecting member 40. Figs. 14A to 14G are diagrams for explaining a manufacturing method of the reflecting member 40.

[0021] The multiple light emitting devices 1 include a first light emitting device 1A, a second light emitting device 1B, and a third light emitting device 1C. Typically, the multiple light emitting devices 1 include multiple first light emitting devices 1A, multiple first light emitting devices 1A, and multiple first light emitting devices 1A.

[0022] In this embodiment, it is assumed, for example, that a manufacturer of multiple light-emitting devices 1 manufactures a large number of first light-emitting devices 1A, a large number of second light-emitting devices 1B, and a large number of third light-emitting devices 1C.

[0023] Alternatively, a person who manages inventory and sells a large number of first light-emitting devices 1A, a large number of second light-emitting devices 1B, and a large number of third light-emitting devices 1C can enjoy the same effects as if they were manufacturing the first light-emitting devices 1A, the second light-emitting devices 1B, and the third light-emitting devices 1C themselves, by adjusting the manufacturer of the first light-emitting devices 1A, the second light-emitting devices 1B, and the third light-emitting devices 1C from a technical standpoint based on the technical ideas disclosed in this specification.

[0024] In other words, the invention disclosed in this specification can be practiced by manufacturing multiple light-emitting devices 1 by the user, or the user can choose not to manufacture some or all of the multiple light-emitting devices 1 by themselves, but instead use one or more manufacturers to complete the invention disclosed in this specification, thereby practicing the invention.

[0025] The light emitting device 1 includes a plurality of components, including a package 10, a plurality of semiconductor laser elements 20, one or a plurality of submounts 30, a plurality of reflecting members 40, one or a plurality of protective elements 50, a plurality of wirings 60, and an optical member 70.

[0026] The light emitting device 1 may include other components. For example, the light emitting device 1 may include a semiconductor laser element in addition to the one or more semiconductor laser elements 20. The light emitting device 1 may not include some of the components listed here.

[0027] First, each component will be described.

[0028] (Package 10) The package 10 includes a base 11 and a lid 14. The lid 14 is joined to the base 11 to form the package 10. An internal space is defined in the package 10 in which other components are disposed. This internal space is a closed space surrounded by the base 11 and the lid 14. In addition, this internal space can be a space sealed in a vacuum or airtight state.

[0029] When viewed from above, the outer edge shape of the package 10 is rectangular. This rectangle can be a rectangle having a long side and a short side. In the illustrated package 10, the long side direction of this rectangle is the same as the X direction, and the short side direction is the same as the Y direction. Note that when viewed from above, the outer edge shape of the package 10 does not have to be rectangular.

[0030] In the package 10, an internal space is formed in which other components are disposed. The first upper surface 11A of the package 10 is a part of an area that defines the internal space. In addition, each of the inner side surfaces 11E and the lower surface 14B of the package 10 is also a part of an area that defines the internal space.

[0031] The base 11 has a first upper surface 11A and a lower surface 11B. The base 11 has a second upper surface 11C. The base 11 has one or more outer surfaces 11D. The base 11 has one or more inner surfaces 11E. The one or more outer surfaces 11D intersect with the second upper surface 11C. The one or more outer surfaces 11D intersect with the lower surface 11B. The one or more inner surfaces 11E intersect with the second upper surface 11C.

[0032] When viewed from above, the outer edge shape of base 11 is rectangular. When viewed from above, the outer edge shape of base 11 is the outer edge shape of package 10. When viewed from above, the outer edge shape of first top surface 11A is rectangular. This rectangle can be a rectangle having long sides and short sides. The long side direction of first top surface 11A and the long side direction of the outer edge shape of base 11 are parallel. Note that when viewed from above, the outer edge shape of first top surface 11A does not have to be rectangular.

[0033] In top view, first top surface 11A is surrounded by second top surface 11C. Second top surface 11C is an annular surface surrounding first top surface 11A in top view. Second top surface 11C is a rectangular annular surface. Here, the frame defined by the inner edge of second top surface 11C is referred to as the inner frame of second top surface 11C, and the frame defined by the outer edge of second top surface 11C is referred to as the outer frame of second top surface 11C.

[0034] The base 11 has a recess surrounded by a frame by the second top surface 11C. The recess defines a portion of the base 11 that is recessed below the second top surface 11C. The first top surface 11A is a part of the recess. The one or more inner surfaces 11E are a part of the recess. The second top surface 11C is located above the first top surface 11A.

[0035] The base 11 has one or more step portions 11F. The step portion 11F has an upper surface 11G and a side surface 11H that intersects with the upper surface 11G and extends downward from the upper surface 11G. Here, one step portion 11F has only one upper surface 11G and one side surface 11H. The upper surface 11G intersects with the inner surface 11E. The side surface 11H intersects with the first upper surface 11A.

[0036] The or each step portion 11F is provided inside the inner frame of the second top surface 11C in top view. The or each step portion 11F is formed along a part or all of the inner side surface 11E in top view. In the base 11, the side surface 11H is an inner side surface, but the side surface 11H and the inner side surface 11E are different surfaces. The or each inner side surface 11E and the or each side surface 11H are perpendicular to the first top surface 11A. Here, the perpendicular allows a difference of ±3 degrees.

[0037] The one or more step portions 11F may include a first step portion 11F1 and a second step portion 11F2. The first step portion 11F1 and the second step portion 11F2 are provided at positions where their respective side surfaces 11H face each other. The first step portion 11F1 and the second step portion 11F2 are provided on the short side of the inner frame of the second upper surface 11C.

[0038] The base 11 has a base portion 11M and a frame portion 11N. The base portion 11M and the frame portion 11N may be members made of different materials. The base 11 may be configured to include a base member corresponding to the base portion 11M and a frame member corresponding to the frame portion 11N.

[0039] The base 11M includes a first upper surface 11A. The frame 11N includes a second upper surface 11C. The frame 11N includes one or more outer surfaces 11D and one or more inner surfaces 11E. The frame 11N includes one or more step portions 11F.

[0040] The lower surface of base 11M constitutes a part or the entire area of ​​lower surface 11B of base 11. When the lower surface of base 11M constitutes a part of the area of ​​lower surface 11B of base 11, the lower surface of frame 11N constitutes the remaining area of ​​lower surface 11B of the base.

[0041] The base 11 has a plurality of wiring portions 12A. The plurality of wiring portions 12A include one or more first wiring portions 12A1 disposed in the internal space of the package 10 and one or more second wiring portions 12A2 provided on the outer surface of the package 10.

[0042] The or each first wiring portion 12A1 is provided on the upper surface 11G of the step portion 11F. The base 11 has one or more first wiring portions 12A1 provided on the upper surface 11G of the first step portion 11F1. The base 11 has one or more first wiring portions 12A1 provided on the upper surface 11G of the second step portion 11F2.

[0043] The or each second wiring portion 12A2 is provided on the bottom surface 11B of the package 10. The or each second wiring portion 12A2 is provided on the bottom surface of the frame portion 11N. Note that the second wiring portion 12A2 may be provided on an outer surface of the package 10 different from the bottom surface 11B.

[0044] When viewed from above, the base 11 has one or more second wiring portions 12A2 provided on the lower surface 11B of the base 11 in the region that includes the upper surface 11G of the first step portion 11F1 when the base 11 is divided into two regions by a virtual line passing through the side surface 11H of the first step portion 11F1 and parallel to this side surface 11H.

[0045] When viewed from above, the base 11 has one or more second wiring portions 12A2 provided on the lower surface 11B of the base 11 in the region that includes the upper surface 11G of the second step portion 11F2 when the base 11 is divided into two regions by a virtual line that passes through the side surface 11H of the second step portion 11F2 and is parallel to this side surface 11H.

[0046] In the base 11, one or each of the first wiring portions 12A1 is electrically connected to the second wiring portion 12A2. One or more of the first wiring portions 12A1 are electrically connected to different second wiring portions 12A2.

[0047] The base 11 has a bonding pattern 13A. The bonding pattern 13A is provided on the second upper surface 11C. The bonding pattern 13A is provided in an annular shape. The bonding pattern 13A is provided in a rectangular annular shape. In a top view, the first upper surface 11A is surrounded by the bonding pattern 13A.

[0048] The base 11 can be formed, for example, using ceramic as the main material. Examples of the ceramic that is the main material of the base 11 include aluminum nitride, silicon nitride, aluminum oxide, and silicon carbide.

[0049] Here, the main material refers to the material that occupies the largest proportion of the mass or volume of the target structure. Note that when the target structure is formed from one material, that material is the main material. In other words, when a material is the main material, it includes the possibility that the proportion of that material can be 100%.

[0050] The base 11 may be formed using a base member and a frame member formed using different main materials. The base member may be formed using, for example, a material having excellent heat dissipation properties, such as a metal or a metal-containing composite, graphite, or diamond, as the main material. Examples of metals that are the main material of the base member include copper, aluminum, and iron. Examples of metal-containing composites that are the main material of the base member include copper molybdenum and copper tungsten. The frame member may be formed using, for example, the ceramics listed above as the main material of the base 11 as the main material.

[0051] The wiring portion 12A can be formed, for example, by using a metal material as a main material. Examples of the metal material that is the main material of the wiring portion 12A include simple metals such as Cu, Ag, Ni, Au, Ti, Pt, Pd, Cr, and W, and alloys containing these metals. The wiring portion 12A can be composed of, for example, one or more metal layers.

[0052] The bonding pattern 13A can be formed, for example, by using a metal material as a main material. Examples of the metal material that is the main material of the bonding pattern 13A include simple metals such as Cu, Ag, Ni, Au, Sn, Ti, and Pd, and alloys containing these metals. The bonding pattern 13A can be formed, for example, by one or more metal layers.

[0053] The lid body 14 has an upper surface 14A and a lower surface 14B. The lid body 14 also has one or more side surfaces 14C. The lid body 14 is configured in a rectangular parallelepiped flat plate shape. The shape of the lid body 14 does not have to be a rectangular parallelepiped.

[0054] The lid 14 is bonded to the base 11. The lower surface 14B of the lid 14 is bonded to the second upper surface 11C of the base 11. The lid 14 is bonded to the bonding pattern 13A of the base 11. The lid 14 is bonded to the base 11 via an adhesive.

[0055] The lid body 14 has a translucency that transmits light. Here, translucency means that the transmittance of light incident on the lid body 14 is 80% or more. The lid body 14 may have a non-translucent region (a region that does not have translucency) in part.

[0056] The cover 14 can be formed, for example, using glass as a main material, or can be formed, for example, using sapphire as a main material.

[0057] (Semiconductor laser element 20) The semiconductor laser element 20 has an upper surface 21A, a lower surface 21B, and a plurality of side surfaces 21C. The shape of the upper surface 21A is a rectangle having long sides and short sides. The outer shape of the semiconductor laser element 20 in top view is a rectangle having long sides and short sides. Note that the shape of the upper surface 21A and the outer shape of the semiconductor laser element 20 in top view are not limited to this.

[0058] The semiconductor laser element 20 has a light emitting surface 22 that emits light. For example, the side surface 21C can serve as the light emitting surface 22. The side surface 21C that serves as the light emitting surface 22 intersects with a short side of the top surface 21A.

[0059] A single-emitter semiconductor laser element having one emitter can be used as the semiconductor laser element 20. Also, a multi-emitter semiconductor laser element having multiple emitters can be used as the semiconductor laser element 20.

[0060] For example, a semiconductor laser element that emits blue light can be used as the semiconductor laser element 20. Alternatively, for example, a semiconductor laser element that emits green light can be used as the semiconductor laser element 20. Alternatively, for example, a semiconductor laser element that emits red light can be used as the semiconductor laser element 20. Note that the semiconductor laser element 20 may also employ a semiconductor laser element that emits light of other colors or wavelengths.

[0061] Here, blue light refers to light whose emission peak wavelength is in the range of 420nm to 494nm, green light refers to light whose emission peak wavelength is in the range of 495nm to 570nm, and red light refers to light whose emission peak wavelength is in the range of 605nm to 750nm.

[0062] The semiconductor laser element 20 emitting blue light or the semiconductor laser element 20 emitting green light may be a semiconductor laser element containing a nitride semiconductor. As the nitride semiconductor, for example, a GaN-based semiconductor such as GaN, InGaN, or AlGaN may be used. As the semiconductor laser element 20 emitting red light, a semiconductor laser element containing an InAlGaP-based, GaInP-based, or GaAs-based semiconductor such as GaAs or AlGaAs may be used.

[0063] The semiconductor laser element 20 emits directional laser light. Diverging light having a spread is emitted from a light emitting surface 22 (emitting end surface) of the semiconductor laser element 20. The light emitted from the semiconductor laser element 20 forms an elliptical far-field pattern (hereinafter referred to as "FFP") on a plane parallel to the light emitting surface 22. The FFP refers to the shape and light intensity distribution of the emitted light at a position away from the light emitting surface of the semiconductor laser element.

[0064] Here, the light passing through the center of the elliptical shape of the FFP, in other words, the light with the peak intensity in the light intensity distribution of the FFP, is called the light traveling along the optical axis or the light passing through the optical axis. Also, in the light intensity distribution of the FFP, the peak intensity value is 1 / e 2 The light having an intensity equal to or greater than this will be referred to as the main portion of the light.

[0065] The shape of the FFP of the light emitted from the semiconductor laser element 20 is an ellipse in which the stacking direction is longer than the direction perpendicular to the stacking direction on a plane parallel to the light emission surface 22. The stacking direction is the direction in which multiple semiconductor layers including the active layer are stacked in the semiconductor laser element 20. The direction perpendicular to the stacking direction can also be called the in-plane direction of the semiconductor layers. The long axis direction of the elliptical shape of the FFP can also be called the fast axis direction of the semiconductor laser element 20, and the short axis direction can also be called the slow axis direction of the semiconductor laser element 20.

[0066] Based on the light intensity distribution of FFP, the peak light intensity is 1 / e 2 The angle at which the light with the peak light intensity spreads is defined as the light spread angle of the semiconductor laser element 20. Here, the light spread angle is the angle between the peak light intensity (light passing through the optical axis) and 1 / e of the peak light intensity. 2 The spread angle of light is expressed as the angle between the light with a peak light intensity of 1 / e 2 In addition to the light intensity at half the peak light intensity, the light intensity may also be calculated from the light intensity at half the peak light intensity. 2 This refers to the spread angle of light at a light intensity of

[0067] The divergence angle of the light emitted from the semiconductor laser element 20 in the fast axis direction can be equal to or greater than 10 degrees and less than 40 degrees. The divergence angle of this light in the slow axis direction can be greater than 0 degrees and equal to or less than 10 degrees. The divergence angle of this light in the fast axis direction is larger than the divergence angle in the slow axis direction.

[0068] For example, the spread angle in the fast axis direction of blue light emitted from the semiconductor laser element 20 can be 15 degrees or more and less than 30 degrees, and the spread angle in the slow axis direction can be 1 degree or more and less than 10 degrees. Also, for example, the spread angle in the fast axis direction of green light emitted from the semiconductor laser element 20 can be 10 degrees or more and less than 30 degrees, and the spread angle in the slow axis direction can be 1 degree or more and less than 10 degrees. Also, for example, the spread angle in the fast axis direction of red light emitted from the semiconductor laser element 20 can be 15 degrees or more and less than 40 degrees, and the spread angle in the slow axis direction can be 1 degree or more and less than 10 degrees.

[0069] (Submount 30) The submount 30 has an upper surface 31A, a lower surface 31B, and one or more side surfaces 31C. The upper surface 31A can be said to be a mounting surface on which other components are mounted. The shape of the upper surface 31A is rectangular. This rectangle of the upper surface 31A can have short sides and long sides. It should be noted that the shape of the upper surface 31A does not have to be rectangular.

[0070] The outer shape of the submount 30 when viewed from above is rectangular. This rectangle of the submount 30 may have a short side and a long side. It should be noted that the outer shape of the submount 30 when viewed from above does not have to be rectangular. The submount 30 may have an outer shape in which the length in one direction (hereinafter, this direction will be referred to as the short side direction of the submount 30) when viewed from above is smaller than the length in the direction perpendicular to the short side direction (hereinafter, this direction will be referred to as the long side direction of the submount 30). In the illustrated submount 30, the short side direction is the same as the X direction, and the long side direction is the same as the Y direction.

[0071] The submount 30 may be configured to include a substrate 32A and an upper metal member 32B. The submount 30 may further be configured to include a lower metal member 32C. The upper metal member 32B is provided on the upper surface side of the substrate 32A. The lower metal member 32C is provided on the lower surface side of the substrate 32A. The submount 30 further includes a wiring layer 33. The wiring layer 33 is provided on the upper metal member 32B.

[0072] The substrate 32A has insulating properties. The substrate 32A is made of, for example, silicon nitride, aluminum nitride, or silicon carbide. It is preferable to select ceramic, which has relatively good heat dissipation properties (high thermal conductivity), as the main material of the substrate 32A.

[0073] The upper metal member 32B is mainly made of a metal such as copper or aluminum. The upper metal member 32B has one or more metal layers. The upper metal member 32B may have multiple metal layers made of different metals as main materials.

[0074] The lower metal member 32C is mainly made of a metal such as copper or aluminum. The lower metal member 32C has one or more metal layers. The lower metal member 32C may have multiple metal layers made of different metals as main materials.

[0075] The wiring layer 33 can be formed using a metal. For example, the wiring layer 33 can be formed using AuSn solder (a metal layer of AuSn).

[0076] For example, the length of the short side or lateral direction of the submount 30 is 500 μm or more and 2000 μm or less. The length of the long side or longitudinal direction of the submount 30 is 1000 μm or more and 2500 μm or less. The difference between the length of the long side and the length of the lateral direction of the submount 30 is 100 μm or more and 1000 μm or less.

[0077] For example, the thickness of the submount 30 (width in a direction perpendicular to the upper surface 31A) is 200 μm or more and 400 μm or less. Also, for example, the thickness of the substrate 32A is 100 μm or more and 300 μm or less. Also, for example, the thickness of the upper metal member 32B is 30 μm or more and 100 μm or less. Also, for example, the thickness of the lower metal member 32C is 30 μm or more and 100 μm or less. Also, for example, the thickness of the wiring layer 33 is 1 μm or more and 10 μm or less.

[0078] (Reflective member 40) The reflecting member 40 has a lower surface 41A and a light reflecting surface 41B that reflects light. The light reflecting surface 41B is inclined with respect to the lower surface 41A. A straight line connecting the lower end and the upper end of the light reflecting surface 41B is inclined with respect to the lower surface 41A. The angle at which the light reflecting surface 41B is inclined with respect to the lower surface 41A is referred to as the inclination angle of the light reflecting surface 41B.

[0079] The light reflecting surface 41B is a flat surface. The light reflecting surface 41B may be a curved surface. The inclination angle of the light reflecting surface 41B is 45 degrees. The inclination angle of the light reflecting surface 41B does not have to be 45 degrees.

[0080] The main material of the reflective member 40 may be glass, metal, or the like. It is preferable to use a heat-resistant material as the main material of the reflective member 40. The main material may be, for example, glass such as quartz or BK7 (borosilicate glass), or metal such as Al. The reflective member 40 may also be formed using Si as the main material.

[0081] The material forms the outline of the reflecting member 40, and the light reflecting surface 41B is formed on the surface of the outline. In this case, the light reflecting surface 41B is formed by providing a reflecting film 42 on the surface on which the light reflecting surface 41B is to be formed. The reflecting film 42 may be, for example, a metal layer such as Ag or Al, or a Ta 2 O 5 / SiO 2 , TiO 2 / SiO 2 , Nb 2 O 5 / SiO 2 A dielectric multilayer film such as the above can be used.

[0082] The light reflecting surface 41B has a reflectance of 90% or more for the peak wavelength of light irradiated onto the light reflecting surface 41B. This reflectance may be 95% or more. This reflectance can also be 99% or more. The light reflectance is 100% or less or less than 100%.

[0083] (Protection element 50) The protection element 50 has an upper surface 51A, a lower surface 51B, and one or more side surfaces 51C. The shape of the protection element 50 is a rectangular parallelepiped. Note that the shape of the protection element 50 does not have to be a rectangular parallelepiped.

[0084] The protective element 50 is intended to prevent an excessive current from flowing through a specific element (such as a semiconductor laser element) and causing the element to be destroyed. An example of the protective element 50 is a Zener diode. The Zener diode may be made of Si.

[0085] (Wiring 60) The wiring 60 is a linear conductive material with joints at both ends. The joints at both ends become joints with other components. The wiring 60 is used for electrical connection between two components. The wiring 60 is, for example, a metal wire. Examples of metals that can be used include gold, aluminum, silver, and copper.

[0086] (Optical member 70) The optical member 70 has an upper surface 71A, a lower surface 71B, and one or more side surfaces 71C. The optical member 70 provides an optical effect to light incident on the optical member 70. Examples of the optical effects provided to light by the optical member 70 include light collection, collimation, diffusion, polarization, diffraction, wave combining, light guiding, reflection, and wavelength conversion.

[0087] The optical member 70 has an optically active surface that provides an optical effect. The upper surface 71A, the lower surface 71B, or the side surface 71C can be the optically active surface. Alternatively, the optically active surface may be located at a position different from the upper surface 71A, the lower surface 71B, or the side surface 71C. For example, the optically active surface may be formed inside the optical member 70, rather than on the surface thereof.

[0088] The optical member 70 may have one or more lens surfaces 71D. The lens surface 71D is an optically active surface of the optical member 70. The optical member 70 having the lens surface 71D may be called a lens member. The optical member 70 provides the optical effect of focusing, diffusing, or collimating the light that passes through the lens surface 71D and is emitted from the optical member 70. For example, the optical member 70 is a collimating lens that converts the light that is incident on the optical member 70 into collimated light and emits it.

[0089] One or each lens surface 71D is provided on the upper surface 71A side. Alternatively, lens surface 71D may be provided on the lower surface 71B side. Upper surface 71A and lower surface 71B are flat surfaces. One or each lens surface 71D intersects with upper surface 71A. In top view, one or each lens surface 71D is surrounded by upper surface 71A.

[0090] When viewed from above, the outer shape of the optical member 70 is rectangular. However, the outer shape of the optical member 70 when viewed from above does not have to be rectangular. The lower surface 71B is flat. No lens surface 71D is formed on the lower surface 71B side of the optical member 70. The shape of the lower surface 71B is rectangular. However, the shape of the lower surface 71B does not have to be rectangular.

[0091] In optical member 70, a portion overlapping with lens surface 71D in a top view is defined as lens portion 72A. In optical member 70, a portion overlapping with top surface 71A in a top view is defined as non-lens portion 72B. Bottom surface 71B has a region that forms the bottom surface of one or each lens portion 72A, and a region that forms the bottom surface of non-lens portion 72B.

[0092] The optical member 70 may have a plurality of lens surfaces 71D formed in a line in one direction. The direction in which the plurality of lens surfaces 71D are arranged in a top view is referred to as the lens connection direction. In the illustrated optical member 70, the connection direction is the same as the X direction.

[0093] The lens surfaces 71D are formed such that the vertices of the lens surfaces 71D are aligned in a straight line. This imaginary line connecting the vertices is parallel to the lower surface 71B of the optical member 70. Note that "parallel" here includes a difference of ±5 degrees or less.

[0094] The curvature of two or more lens surfaces 71D, which may be part or all of the multiple lens surfaces 71D, may be the same. All of the multiple lens surfaces 71D may have the same curvature.

[0095] The optical member 70 is translucent. The optical member 70 has a transmittance of 80% or more for the peak wavelength of light incident on the optical member 70. The optical member 70 may have a region having translucency and a region not having translucency (hereinafter referred to as a non-translucent region). In the non-translucent region, the transmittance for the peak wavelength of light incident on the optical member 70 is 50% or less. The optical member 70 can be formed using glass such as BK7.

[0096] Next, the light emitting device 1 will be described.

[0097] (Light emitting device 1) In the light emitting device 1, a plurality of semiconductor laser elements 20 are disposed in the internal space of the package 10. The plurality of semiconductor laser elements 20 are disposed on the first upper surface 11A. In top view, the plurality of semiconductor laser elements 20 are surrounded by a frame portion 11N.

[0098] The multiple semiconductor laser elements 20 are arranged side by side in a first direction. Each of the multiple semiconductor laser elements 20 emits light in a second direction. The second direction is a direction perpendicular to the first direction. The second direction is a lateral direction with respect to the first upper surface 11A. In the illustrated light emitting device 1, the first direction is the same as the X direction. Also, the second direction is the same as the Y direction.

[0099] The multiple semiconductor laser elements 20 are disposed at equal intervals in the first direction. The multiple semiconductor laser elements 20 are disposed so that the light emitting surfaces 22 are not misaligned with each other in the second direction. The misalignment of the light emitting surfaces 22 between the multiple semiconductor laser elements 20 in the second direction is ±10 μm or less. The light emitting surfaces 22 of the multiple semiconductor laser elements 20 may be intentionally misaligned. For example, the position of the light emitting surface 22 may be adjusted in consideration of warping of the first upper surface 11A.

[0100] In the light emitting device 1, one or more submounts 30 are disposed in the internal space of the package 10. The one or more submounts 30 are disposed on the first upper surface 11A. A plurality of semiconductor laser elements 20 are disposed on the one or more submounts 30. The semiconductor laser element 20 is disposed on one or each of the submounts 30.

[0101] Each of the semiconductor laser elements 20 is disposed on the first upper surface 11A via the submount 30. Each of the semiconductor laser elements 20 is disposed on the wiring layer 33 of the submount 30.

[0102] One or more semiconductor laser elements 20 are disposed on one submount 30. In the illustrated light emitting device 1, only one semiconductor laser element 20 is disposed on one submount 30. By using the submount 30, the height from the first upper surface 11A to the light emission point of the semiconductor laser element 20 can be adjusted.

[0103] The one or more submounts 30 may be configured with multiple submounts 30 having the same thickness. Here, the "same thickness" includes a difference within ±20 μm. By making the thicknesses of the multiple submounts 30 uniform, it becomes easier to align the heights of the light emission points of the multiple semiconductor laser elements 20.

[0104] The submount 30 on which one semiconductor laser element 20 is arranged is arranged so that the short side direction of the upper surface 31A is parallel to the first direction, thereby making it possible to increase the number of semiconductor laser elements 20 that can be arranged in the first direction.

[0105] In the light emitting device 1, a plurality of reflective members 40 are disposed in the internal space of the package 10. The plurality of reflective members 40 are disposed on the first upper surface 11A. In a top view, the plurality of reflective members 40 are surrounded by a frame portion 11N.

[0106] The multiple reflecting members 40 are arranged side by side in the first direction. All of the multiple reflecting members 40 are arranged at positions away from the semiconductor laser element 20 in the second direction. The multiple reflecting members 40 are mounted such that the upper edge sides of the light reflecting surfaces 41B of the multiple reflecting members 40 are arranged on the same straight line parallel to the first direction. The deviation in the second direction of the upper edge sides of the light reflecting surfaces 41B between the multiple reflecting members 40 is within ±10 μm.

[0107] One reflecting member 40 is disposed for one or more semiconductor laser elements 20. In the illustrated light emitting device 1, one reflecting member 40 is disposed for one semiconductor laser element 20. Disposing one reflecting member 40 for one semiconductor laser element 20 can shorten the length of the reflecting member 40 in the first direction compared to disposing one reflecting member 40 for two or more semiconductor laser elements 20, and can reduce the influence of rotational misalignment when mounting the reflecting member 40.

[0108] Each of the multiple reflecting members 40 reflects light emitted from any of the multiple semiconductor laser elements 20. Light emitted from the semiconductor laser element 20 is irradiated onto the light reflecting surface 41B of each of the multiple reflecting members 40. The light reflecting surface 41B of each of the multiple reflecting members 40 reflects the light emitted laterally from the semiconductor laser element 20 upward.

[0109] In each of the semiconductor laser elements 20, the light traveling along the optical axis emitted from the light emitting surface 22 is reflected by the light reflecting surface 41B and travels in a direction perpendicular to the first upper surface 11A. In other words, the angle between the light traveling along the optical axis and the reflected light incident on the light reflecting surface 41B is a right angle. Note that the right angle here is within the range of 90 degrees ±5 degrees.

[0110] In the light emitting device 1, one or more protective elements 50 are disposed in the internal space of the package 10. The protective element 50 is disposed on the upper surface 31A of the submount 30. The protective element 50 may be disposed on a plane other than the upper surface 31A of the submount 30 present in the internal space of the package 10. The protective element 50 plays a role in protecting the semiconductor laser element 20.

[0111] The semiconductor laser elements 20 are electrically connected to the package 10 by the wirings 60. Each of the semiconductor laser elements 20 is electrically connected to the first wiring portion 12A1. Each of the semiconductor laser elements 20 is also electrically connected to the second wiring portion 12A2 via the first wiring portion 12A1.

[0112] In the light emitting device 1, the optical member 70 is fixed to the package 10. The optical member 70 is disposed above the first upper surface 11A and the multiple semiconductor laser elements 20. The optical member 70 is bonded to the lid 14. The optical member 70 is fixed to the base 11 via the lid 14. Note that the optical member 70 may be fixed to the base 11 without using the lid 14.

[0113] The bottom surface 71B of the optical member 70 and the top surface 14A of the cover 14 are joined together via an adhesive. The adhesive is provided mainly on the non-lens portion 72B of the optical member 70. This makes it possible to prevent the adhesive from being disposed on the optical path of the light traveling to the lens portion 72A.

[0114] The light reflected by the multiple reflecting members 40 is incident on the optical surface of the optical member 70. The optical member 70 gives an optical effect to the light incident on the optical surface, and then emits the light from the optical member 70.

[0115] Among the multiple semiconductor laser elements 20, the region where the main portion of the light emitted from a certain semiconductor laser element 20 is incident on the optical surface does not overlap with the region where the main portion of the light emitted from the other semiconductor laser elements 20 is incident on the optical surface. In the light emitting device 1, this relationship can be established for any semiconductor laser element 20.

[0116] Here, in the light emitted from the plurality of semiconductor laser elements 20, the portions corresponding to the light emitted from each semiconductor laser element 20 are referred to as partial light and are distinguished from each other. It can be said that the light emitted from the plurality of semiconductor laser elements 20 is composed of a plurality of partial light.

[0117] The partial light beams from the plurality of semiconductor laser elements 20 are aligned in the first direction and emitted from the package 10. The partial light beams from the plurality of semiconductor laser elements 20 are aligned in the first direction and enter the optical member 70. The partial light beams are irradiated onto the lower surface 71B of the optical member 70 without major portions overlapping each other.

[0118] The partial beams are emitted from the upper surface 14A of the package 10 so that the points at which the light passing through the optical axis of each of the partial beams passes through the upper surface 14A are located on a straight line parallel to the first direction. Note that "an object is located on a straight line parallel to the first direction" here includes the object being located within a range of ±50 μm in the second direction from a virtual line parallel to the first direction.

[0119] The optical member 70 has a plurality of lens surfaces 71D corresponding one-to-one to the plurality of semiconductor laser elements 20. In other words, it can also be said that the optical member 70 has a plurality of lens portions 72A corresponding one-to-one to the plurality of semiconductor laser elements 20.

[0120] The connection direction of the plurality of lens surfaces 71D is parallel to the first direction in top view. The vertices of the lenses in the plurality of lens portions 72A are located on a straight line parallel to the first direction in top view. Here, "the object is located on a straight line parallel to the first direction in top view" includes the object being located within a range of ±100 μm in the second direction from a virtual line parallel to the first direction in top view.

[0121] In the light emitting device 1, each of the plurality of partial lights passes through a corresponding lens surface 71D. A major portion of the light in each partial light falls within the corresponding lens surface 71D in top view. In the light emitting device 1, the light passing through the optical axis of each of the plurality of partial lights passes through the apex of the corresponding lens surface 71D. Note that "an object passing through the apex of lens surface 71D" here includes the object passing inside a circle with a radius of ±300 μm from the apex of lens surface 71D in top view.

[0122] The light emitting device 1 can obtain ideal output light by aligning the optical axes of a plurality of partial lights in a straight line and making the light incident on the optical action surface. For example, by aligning the light passing through the optical axis of each partial light in a straight line and passing through the vertex of each lens surface 71D, it is possible to provide each partial light with an ideal optical action.

[0123] Next, a first light emitting device 1A, a second light emitting device 1B, and a third light emitting device 1C, each of which is a form of the light emitting device 1, will be described.

[0124] (First light emitting device 1A) The multiple semiconductor laser elements 20 included in the first light emitting device 1A include a semiconductor laser element 20 that emits light of a first color whose emission peak wavelength is a first wavelength. Here, the semiconductor laser element 20 that emits light of a first color whose emission peak wavelength is a first wavelength is referred to as a first semiconductor laser element 20A.

[0125] The first light emitting device 1A includes a plurality of first semiconductor laser elements 20A. Any semiconductor laser element 20 having an emission peak wavelength within the first wavelength ±10 nm is included in the first semiconductor laser element 20A. The difference in emission peak wavelength between the plurality of first semiconductor laser elements 20A included in the first light emitting device 1A may not exceed 10 nm at most.

[0126] The first wavelength is, for example, a wavelength in the range of 420 nm to 494 nm. Alternatively, the first wavelength can be, for example, a wavelength in the range of 440 nm to 470 nm. Alternatively, the first wavelength can be, for example, either 455 nm or 465 nm.

[0127] The first color is, for example, any one of red, green, and blue, and is, for example, blue.

[0128] The plurality of semiconductor laser elements 20 included in the first light emitting device 1A does not include a second semiconductor laser element 20B, which will be described later. In other words, the first light emitting device 1A does not include the second semiconductor laser element 20B.

[0129] The plurality of semiconductor laser elements 20 included in the first light emitting device 1A does not include a fourth semiconductor laser element 20D, which will be described later. In other words, the first light emitting device 1A does not include the fourth semiconductor laser element 20D.

[0130] For example, all of the semiconductor laser elements 20 included in the first light emitting device 1A may be configured with the first semiconductor laser element 20A. The first light emitting device 1A may include a semiconductor laser element 20 that emits light of a color different from both the first color light and the color of the light emitted from the second semiconductor laser element 20B.

[0131] The multiple reflecting members 40 included in the first light emitting device 1A include multiple first reflecting members 40A that reflect the light emitted from the multiple first semiconductor laser elements 20A. Each of the multiple first reflecting members 40A reflects the first color light emitted from the first semiconductor laser elements 20A.

[0132] Each of the multiple first reflecting members 40A has a light reflecting surface 41B provided with a reflecting film 42 having a reflectance of 90% or more for a first wavelength. Here, the reflecting film 42 on the first reflecting member 40A is referred to as a first reflecting film 42A, and the light reflecting surface 41B on the first reflecting member 40A is referred to as a first light reflecting surface 41B1.

[0133] The first reflective film 42A has a higher reflectance for a first wavelength than for a second wavelength described below. The difference between the reflectance for the first wavelength and the reflectance for the second wavelength in the first reflective film 42A is 5% or more. Alternatively, this reflectance difference can be 10% or more. Alternatively, this reflectance difference can be 15% or more. Alternatively, this reflectance difference can be 20% or more. Alternatively, this reflectance difference can be 25% or more. The reflectance for the second wavelength in the first reflective film 42A is 0% or more.

[0134] In the first light emitting device 1A, since a plurality of semiconductor laser elements 20 and a plurality of reflecting members 40 are arranged in a package 10, it can be said that a plurality of first semiconductor laser elements 20A and a plurality of first reflecting members 40A are necessarily arranged in the package 10. Here, for convenience, the package 10 included in the first light emitting device 1A is referred to as a first package.

[0135] (Second light emitting device 1B) The second light emitting device 1B includes a semiconductor laser element 20 that emits light of a second color whose emission peak wavelength is a second wavelength. Here, the semiconductor laser element 20 that emits light of the second color whose emission peak wavelength is the second wavelength is referred to as a second semiconductor laser element 20B.

[0136] The second light emitting device 1B includes a plurality of second semiconductor laser elements 20B. Any semiconductor laser element 20 having an emission peak wavelength within ±10 nm of the second wavelength is included in the second semiconductor laser element 20B. The difference in emission peak wavelength between the plurality of second semiconductor laser elements 20B included in the second light emitting device 1B may be set to not exceed 10 nm at most.

[0137] The second wavelength is, for example, a wavelength within a range of 495 nm to 570 nm. Also, for example, the second wavelength can be a wavelength within a range of 500 nm to 550 nm. The second color is a color different from the first color.

[0138] The second color is, for example, any one of red, green, and blue, and the second color light is, for example, green light.

[0139] The difference between the first wavelength and the second wavelength is 30 nm or more. The difference between the first wavelength and the second wavelength can be 50 nm or more. The difference between the first wavelength and the second wavelength can be 100 nm or more.

[0140] The second light emitting device 1B includes a plurality of semiconductor laser elements 20 that does not include the first semiconductor laser element 20A. In other words, the second light emitting device 1B does not include the first semiconductor laser element 20A.

[0141] The multiple semiconductor laser elements 20 included in the second light emitting device 1B do not include a third semiconductor laser element 20C, which will be described later. In other words, the second light emitting device 1B does not include the third semiconductor laser element 20C.

[0142] For example, all of the semiconductor laser elements 20 included in the second light emitting device 1B may be configured with the second semiconductor laser elements 20B. The second light emitting device 1B may include a semiconductor laser element 20 that emits light of a color different from both the first color light and the second color light.

[0143] The multiple reflecting members 40 included in the second light emitting device 1B include multiple second reflecting members 40B that reflect the light emitted from the multiple second semiconductor laser elements 20B. Each of the multiple second reflecting members 40B reflects the second color light emitted from the second semiconductor laser elements 20B.

[0144] Each of the second reflecting members 40B has a light reflecting surface 41B provided with a reflecting film 42 having a reflectance of 90% or more for a second wavelength. Here, the reflecting film 42 in the second reflecting member 40B is referred to as a second reflecting film 42B, and the light reflecting surface 41B in the second reflecting member 40B is referred to as a second light reflecting surface 41B2.

[0145] The second reflective film 42B has a higher reflectance for the second wavelength than for the first wavelength. The difference between the reflectance for the second wavelength and the reflectance for the first wavelength in the second reflective film 42B is 5% or more. Alternatively, this reflectance difference can be 10% or more. Alternatively, this reflectance difference can be 15% or more. Alternatively, this reflectance difference can be 20% or more. Alternatively, this reflectance difference can be 25% or more. The reflectance for the first wavelength in the second reflective film 42B is 0% or more.

[0146] In the second light emitting device 1B, since a plurality of semiconductor laser elements 20 and a plurality of reflecting members 40 are arranged in the package 10, it can be said that a plurality of second semiconductor laser elements 20B and a plurality of second reflecting members 40B are necessarily arranged in the package 10. Here, for convenience, the package 10 included in the second light emitting device 1B is referred to as a second package.

[0147] The second package is a package 10 having the same outer shape as the first package. Furthermore, the exact outer shape of the second package may be the same as the exact outer shape of the first package. The second package may be the same package 10 as the first package. However, the internal space and internal structure of the packages may be different from each other.

[0148] The reflectance of the first reflecting film 42A to light of the first wavelength is higher than the reflectance of the second reflecting film 42B to light of the first wavelength. The first light reflecting surface 41B1 of the first reflecting member 40A has a higher reflectance to the first wavelength than the second light reflecting surface 41B2 of the second reflecting member 40B.

[0149] The reflectance of the second reflecting film 42B for light of the second wavelength is higher than the reflectance of the first reflecting film 42A for light of the second wavelength. The second light reflecting surface 41B2 of the second reflecting member 40B has a higher reflectance for the second wavelength than the first light reflecting surface 41B1 of the first reflecting member 40A.

[0150] (Third light emitting device 1C) The semiconductor laser elements 20 included in the third light emitting device 1C include a semiconductor laser element 20 that emits a first color light having a third wavelength as its peak emission wavelength. Here, the semiconductor laser element 20 that emits the first color light having the third wavelength as its peak emission wavelength is referred to as a third semiconductor laser element 20C.

[0151] The semiconductor laser element 20 included in the third light emitting device 1C includes a semiconductor laser element 20 that emits light of a second color whose emission peak wavelength is a fourth wavelength. Here, the semiconductor laser element 20 that emits light of the second color whose emission peak wavelength is a fourth wavelength is referred to as a fourth semiconductor laser element 20D.

[0152] The third light emitting device 1C includes one or more third semiconductor laser elements 20C. The third light emitting device 1C may include more than one third semiconductor laser element 20C. Any semiconductor laser element 20 having an emission peak wavelength within the third wavelength ±10 nm is included in the third semiconductor laser element 20C. The difference in emission peak wavelength between the multiple third semiconductor laser elements 20C included in the third light emitting device 1C may be no more than 10 nm.

[0153] The third light emitting device 1C includes one or more fourth semiconductor laser elements 20D. The third light emitting device 1C may include more than one fourth semiconductor laser element 20D. Any semiconductor laser element 20 having an emission peak wavelength within the fourth wavelength ±10 nm is included in the fourth semiconductor laser element 20D. The difference in emission peak wavelength between the multiple fourth semiconductor laser elements 20D included in the third light emitting device 1C may be set to a maximum not exceeding 10 nm.

[0154] The third wavelength is, for example, a wavelength in the range of 420 nm to 494 nm. Alternatively, the third wavelength can be, for example, a wavelength in the range of 440 nm to 470 nm. Alternatively, the third wavelength can be, for example, either 455 nm or 465 nm.

[0155] The difference between the first wavelength and the third wavelength is 15 nm or less. The difference between the first wavelength and the third wavelength can be 10 nm or less. The first wavelength and the third wavelength can be the same wavelength. Here, "same" includes a difference of 5 nm or less.

[0156] The fourth wavelength is, for example, a wavelength within a range of 495 nm to 570 nm. Also, for example, the second wavelength can be a wavelength within a range of 500 nm to 550 nm. The second color light is, for example, green light.

[0157] The difference between the second wavelength and the fourth wavelength is 15 nm or less. The difference between the second wavelength and the fourth wavelength can be 10 nm or less. The second wavelength and the fourth wavelength can be the same wavelength. In this case, "same" includes a difference of 5 nm or less.

[0158] The difference between the third wavelength and the fourth wavelength is 30 nm or more. The difference between the third wavelength and the fourth wavelength can be 50 nm or more. The difference between the third wavelength and the fourth wavelength can be 100 nm or more.

[0159] The third light emitting device 1C may include, in addition to one or more third semiconductor laser elements 20C and one or more fourth semiconductor laser elements 20D, a semiconductor laser element 20 that emits light of a color different from both the first color light and the second color light.

[0160] The multiple reflective members 40 included in the third light emitting device 1C include multiple third reflective members 40C that reflect light emitted from one or more third semiconductor laser elements 20C and one or more fourth semiconductor laser elements 20D. The multiple third reflective members 40C include a reflective member 40 that reflects light of a first color emitted from the third semiconductor laser element 20C, and a reflective member 40 that reflects light of a second color emitted from the fourth semiconductor laser element 20D.

[0161] Each of the third reflecting members 40C has a light reflecting surface 41B provided with a reflecting film 42 having a reflectance of 90% or more for the third wavelength and the fourth wavelength. Here, the reflecting film 42 in the third reflecting member 40C is referred to as a third reflecting film 42C, and the light reflecting surface 41B in the third reflecting member 40C is referred to as a third light reflecting surface 41B3.

[0162] The difference between the reflectance for the third wavelength and the reflectance for the fourth wavelength in the third reflective film 42C is smaller than the difference between the reflectance for the first wavelength and the reflectance for the second wavelength in the first reflective film 42A. The difference between the reflectance for the third wavelength and the reflectance for the fourth wavelength in the third reflective film 42C is equal to or less than half the difference between the reflectance for the first wavelength and the reflectance for the second wavelength in the first reflective film 42A.

[0163] The difference between the reflectance for the fourth wavelength and the reflectance for the third wavelength in the third reflective film 42C is smaller than the difference between the reflectance for the second wavelength and the reflectance for the first wavelength in the second reflective film 42B. The difference between the reflectance for the fourth wavelength and the reflectance for the third wavelength in the third reflective film 42C is equal to or less than half the difference between the reflectance for the second wavelength and the reflectance for the first wavelength in the second reflective film 42B.

[0164] In the third reflective film 42C, the difference between the reflectance for the third wavelength and the reflectance for the fourth wavelength is 0% or more and 4.0% or less. Alternatively, this reflectance difference can be 0% or more and 3.0% or less. Still alternatively, this reflectance difference can be 0% or more and 2.0% or less. Still alternatively, this reflectance difference can be 0% or more and 1.0% or less.

[0165] In the third light emitting device 1C, the multiple semiconductor laser elements 20 and the multiple reflecting members 40 are arranged in the package 10, and therefore it can be said that one or multiple third semiconductor laser elements 20C, one or multiple fourth semiconductor laser elements 20D, and multiple third reflecting members 40C are necessarily arranged in the package 10. Here, the package 10 included in the third light emitting device 1C is referred to as a third package for convenience.

[0166] The third package is a package 10 having the same outer shape as the first package. Furthermore, the exact outer shape of the third package may be the same as the exact outer shape of the first package. The third package may be the same package 10 as the first package. However, the internal space and internal structure of the packages may be different from each other.

[0167] The third package is a package 10 having the same outer shape as the second package. Furthermore, the exact outer shape of the third package may be the same as the exact outer shape of the second package. The third package may be the same package 10 as the second package. However, the internal space and internal structure of the packages may be different from each other.

[0168] In the third light emitting device 1C, the multiple semiconductor laser elements 20 may be arranged so that the light emitting surfaces 22 of the semiconductor laser elements 20 emitting light of the same color are aligned, and the light emitting surfaces 22 of the semiconductor laser elements 20 emitting light of different colors are intentionally shifted from one another.

[0169] The reflectance of the third reflective film 42C for light of the first wavelength is higher than the reflectance of the second reflective film 42B for light of the first wavelength. The third light reflecting surface 41B3 of the third reflecting member 40C has a higher reflectance for the first wavelength than the second light reflecting surface 41B2 of the second reflecting member 40B.

[0170] The reflectance of the third reflecting film 42C for light of the second wavelength is higher than the reflectance of the first reflecting film 42A for light of the second wavelength. The third light reflecting surface 41B3 of the third reflecting member 40C has a higher reflectance for the second wavelength than the first light reflecting surface 41B1 of the first reflecting member 40A.

[0171] The reflectance of the third reflective film 42C for light of the third wavelength is higher than the reflectance of the second reflective film 42B for light of the third wavelength. The third light reflecting surface 41B3 of the third reflecting member 40C has a higher reflectance for the third wavelength than the second light reflecting surface 41B2 of the second reflecting member 40B.

[0172] The reflectance of the third reflective film 42C for light of the fourth wavelength is higher than the reflectance of the first reflective film 42A for light of the fourth wavelength. The third light reflecting surface 41B3 of the third reflecting member 40C has a higher reflectance for the fourth wavelength than the first light reflecting surface 41B1 of the first reflecting member 40A.

[0173] The reflectance of the third reflective film 42C for light of the first wavelength is equal to or greater than the reflectance of the first reflective film 42A for light of the first wavelength minus 1.0%. The reflectance of the first reflective film 42A for light of the third wavelength is equal to or greater than the reflectance of the third reflective film 42C for light of the third wavelength minus 1.0%.

[0174] The reflectance of the third reflective film 42C for light of the second wavelength is equal to or greater than the reflectance of the second reflective film 42B for light of the second wavelength minus 1.0%. The reflectance of the second reflective film 42B for light of the fourth wavelength is equal to or greater than the reflectance of the third reflective film 42C for light of the fourth wavelength minus 1.0%.

[0175] The first reflective film 42A has a higher reflectance for the third wavelength than for the fourth wavelength. The difference between the reflectance for the third wavelength and the reflectance for the fourth wavelength in the first reflective film 42A is 5% or more. Alternatively, this reflectance difference can be 10% or more. Alternatively, this reflectance difference can be 15% or more. Alternatively, this reflectance difference can be 20% or more. Alternatively, this reflectance difference can be 25% or more. The reflectance for the fourth wavelength in the first reflective film 42A is 0% or more.

[0176] The second reflective film 42B has a higher reflectance for the fourth wavelength than for the third wavelength. The difference between the reflectance for the fourth wavelength and the reflectance for the third wavelength for the second reflective film 42B is 5% or more. Alternatively, this reflectance difference can be 10% or more. Alternatively, this reflectance difference can be 15% or more. Alternatively, this reflectance difference can be 20% or more. Alternatively, this reflectance difference can be 25% or more. The reflectance for the third wavelength for the second reflective film 42B is 0% or more.

[0177] In the third reflective film 42C, the difference between the reflectance for the first wavelength and the reflectance for the second wavelength is not less than 0% and not more than 4.0%. Alternatively, this reflectance difference can be not less than 0% and not more than 3.0%. Still alternatively, this reflectance difference can be not less than 0% and not more than 2.0%. Still alternatively, this reflectance difference can be not less than 0% and not more than 1.0%.

[0178] The third reflection film 42C has a thickness greater than that of the first reflection film 42A. The third reflection film 42C has a thickness greater than that of the second reflection film 42B. When the light reflection surface 41B is formed of a dielectric multilayer reflection film 42, the number of layers of the dielectric multilayer film in the third reflection film 42C is greater than the number of layers of the dielectric multilayer film in the first reflection film 42A. Also, the number of layers of the dielectric multilayer film in the third reflection film 42C is greater than the number of layers of the dielectric multilayer film in the second reflection film 42B.

[0179] When a large number of first light emitting devices 1A and a large number of second light emitting devices 1B are manufactured, it is necessary to prepare a large number of first semiconductor laser elements 20A, a large number of first reflecting members 40A, a large number of second semiconductor laser elements 20B, and a large number of second reflecting members 40B. In this case, if a common reflecting member 40 is to be used instead of the first reflecting member 40A and the second reflecting member 40B, it is necessary to provide a reflecting film 42 having a high reflectance for both the first wavelength and the second wavelength, or for both the first color light and the second color light, and this requires more material and time to manufacture the reflecting member 40 than providing a reflecting film 42 having a high reflectance only for the first wavelength or the first color.

[0180] For example, when a plurality of reflective members 40 are manufactured by dividing one base material, the plurality of reflective members 40 manufactured from the single base material can be mounted on a plurality of light emitting devices 1. In this case, if the number of reflective members 40 manufactured from one base material is sufficient to manufacture a large number of first light emitting devices 1A and a large number of second light emitting devices 1B, there is an advantage in using a common reflective member 40. This is because it may be more efficient to manufacture a common reflective member 40 by providing one reflective film than to provide two reflective films with different characteristics on one base material to obtain the first reflective member 40A and the second reflective member 40B, respectively.

[0181] On the other hand, if the number of reflective members 40 produced from one base material is not enough to cover the number of reflective members 40 required to produce a large number of first light-emitting devices 1A, and also not enough to cover the number of reflective members 40 required to produce a large number of second light-emitting devices 1B, it may be more efficient to produce only the first reflective members 40A from one base material and only the second reflective members 40B from another base material.

[0182] In this way, when manufacturing a plurality of light emitting devices 1 including the first light emitting device 1A and the second light emitting device 1B, it may be more efficient to manufacture the first reflecting member 40A and the second reflecting member 40B separately. Note that the above is merely an example, and for other reasons, it may be desirable to manufacture the first reflecting member 40A and the second reflecting member 40B separately.

[0183] Under such circumstances, when manufacturing a light emitting device 1 including a third semiconductor laser element 20C that emits light of a first color and a fourth semiconductor laser element 20D that emits light of a second color, it is efficient to employ the first reflecting member 40A employed in the first light emitting device 1A as the reflecting member 40 corresponding to the third semiconductor laser element 20C, and to employ the second reflecting member 40B employed in the second light emitting device 1B as the reflecting member 40 corresponding to the fourth semiconductor laser element 20D.

[0184] However, in this embodiment, the third light emitting device 1C employs a third reflecting member 40C, which can improve the quality of the light emitted from the third light emitting device 1C.

[0185] 13, in the light emitting device 1, even when the two semiconductor laser elements 20 each emit light L1 and L2 from a light emission point at the same height, the position of the light incident on the optical member 70 is shifted in the second direction due to the material tolerance of the reflecting member 40. The quality of the light emitted from the light emitting device 1, in other words, the degree of deviation from an ideal design, is related to various factors such as the material tolerance of the manufactured components and the mounting tolerance when mounting the components, and therefore reducing the degree of deviation due to these factors leads to an improvement in the quality of the light emitted from the light emitting device 1.

[0186] In manufacturing a light emitting device 1 including a third semiconductor laser element 20C that emits a first color light and a fourth semiconductor laser element 20D that emits a second color light, if the first reflecting member 40A and the second reflecting member 40B are used, the base material from which the first reflecting member 40A is manufactured is different from the base material from which the second reflecting member 40B is manufactured, and therefore, the material tolerance between the base materials and the processing variation in the manufacturing process of the reflecting member 40 affect the quality. On the other hand, if the third reflecting member 40C is used, multiple third reflecting members 40C manufactured from the same base material can be used in the light emitting device 1, so that the effects of the material tolerance between the base materials and the processing variation in the manufacturing process of the reflecting member 40 can be reduced, and the quality of the light emitted from the light emitting device 1 can be improved.

[0187] This also applies to the case where the two semiconductor laser elements 20 emit light from light emission points at different heights. In other words, if the heights of the light emission points are different in design, the mounting position of the reflecting member 40 can be adjusted to suppress deviation in the second direction of the position of light incident on the optical member 70. Even in this case, the degree of the member tolerance of the reflecting member 40 affects the quality of the light emitted from the light emitting device 1.

[0188] In this way, by employing the first reflecting member 40A, the second reflecting member 40B, and the third reflecting member 40C to realize a plurality of light emitting devices 1, including a light emitting device 1 having a semiconductor laser element 20 that emits light of a first color, a light emitting device 1 having a semiconductor laser element 20 that emits light of a second color, and a light emitting device 1 having a semiconductor laser element 20 that emits light of the first color and a semiconductor laser element 20 that emits light of the second color, it is possible to improve the quality of the light emitted from the light emitting device 1.

[0189] For ease of understanding, the description has been given with reference to an example in which a large number of light emitting devices 1 are manufactured, managed, and sold, but it is not essential that the number of light emitting devices 1 manufactured, managed, and sold is "large." For example, the same can be said for a case in which two reflecting members are obtained from one base material, and a first light emitting device 1A including two first semiconductor laser elements 20A, a second light emitting device 1B including two second semiconductor laser elements 20B, and a third light emitting device 1C including one third semiconductor laser element 20C and one fourth semiconductor laser element 20D are manufactured.

[0190] Furthermore, the multiple light emitting devices 1 including the first light emitting device 1A, the second light emitting device 1B, and the third light emitting device 1C that are manufactured or managed and sold do not have to be transferred collectively to the same consumer. In the multiple light emitting devices 1, the first light emitting device 1A and the second light emitting device 1B may be transferred to the same consumer or different consumers. In the multiple light emitting devices 1, the first light emitting device 1A and the third light emitting device 1C may be transferred to the same consumer or different consumers. In the multiple light emitting devices 1, the second light emitting device 1B and the third light emitting device 1C may be transferred to the same consumer or different consumers.

[0191] Moreover, it is not essential that the multiple reflective members 40 included in the light emitting device 1 are obtained from one base material in all light emitting devices 1. The number of reflective members 40 obtained from one base material is not always divisible by the number of reflective members 40 included in the light emitting device 1, and in such cases, whether to discard the remaining reflective members 40 or to mix them with reflective members 40 manufactured from a different base material is an item to be considered and decided from a different perspective, and this does not eliminate the effect of improving the quality of light described above.

[0192] On the other hand, when the light emitting device 1 is manufactured using multiple reflective members 40 manufactured from the same base material, the influence of the material tolerance between the multiple reflective members 40 is reduced. For example, the difference in width between the multiple first reflective members 40A included in the first light emitting device 1A in the direction perpendicular to the lower surface 41A can be 15 μm or less. The difference in width between the multiple second reflective members 40B included in the second light emitting device 1B in the direction perpendicular to the lower surface 41A can be 15 μm or less. The difference in width between the multiple third reflective members 40C included in the third light emitting device 1C in the direction perpendicular to the lower surface 41A can be 15 μm or less.

[0193] As a preferred embodiment, the number of reflective members 40 provided in one light emitting device 1 is desirably equal to or less than the number of reflective members 40 obtained from one base material. When one base material is divided to produce N reflective members 40 (N is a natural number), one light emitting device 1 is provided with N or less reflective members 40.

[0194] 14A to 14G, a method for manufacturing a plurality of reflective members 40 from one base material will be described. Note that this manufacturing method is merely one example.

[0195] The reflective member 40 can be manufactured by a manufacturing method including a first step of preparing a base material 400, a second step of shaping the base material 400, a third step of providing a reflective film 402 on the base material 400, and a fourth step of dividing the base material 400.

[0196] For example, a silicon substrate can be used as the base material 400. The base material 400 has a plate-like shape. In the process of forming the base material 400, the base material 400 is formed using a known method such as wet etching. The upper surface side of the base material 400 is partially removed. The formed base material 400 has an inclined surface that is inclined with respect to the lower surface of the base material 400, as shown in FIG. 14C.

[0197] In the step of providing the reflective film 402 on the base material 400, the reflective film 402 is provided on the lower surface of the base material 400. When it is desired to manufacture a first reflective member 40A from this base material 400, the reflective film 402 that will become the first reflective film 42A is provided in this step. When it is desired to manufacture a second reflective member 40B from this base material 400, the reflective film 402 that will become the second reflective film 42B is provided in this step. When it is desired to manufacture a third reflective member 40C from this base material 400, the reflective film 402 that will become the third reflective film 42C is provided in this step.

[0198] Moreover, a metal film 401 is provided on the upper surface side of the base material 400. The metal film 401 is provided on the inclined surface of the base material 400. The metal film 401 functions as a bonding pattern when bonding the reflecting member 40 to the first upper surface 11A of the base body.

[0199] In the step of dividing the base material 400, the base material 400 is divided using a known method such as dicing. In this manner, one base material 400 is divided to manufacture a plurality of reflective members 40 each having a reflective film 42. The number of reflective members 40 obtained from one base material 400 is 10 or more. Also, the number of reflective members 40 obtained from one base material 400 can be 100 or more. Also, the number of reflective members 40 obtained from one base material 400 can be 1000 or more.

[0200] The multiple (10 or more, 100 or more, or 1000 or more) reflective members 40 obtained from one base material 400 all have the same shape. Here, "the same shape" means that the dimensional difference is allowed to be 15 μm or less. By obtaining a large number of reflective members 40 from one base material 400, it is possible to manufacture reflective members 40 that are precisely aligned to the same shape.

[0201] In a method for manufacturing a plurality of light emitting devices 1, including a method for manufacturing a first light emitting device 1A, a method for manufacturing a second light emitting device 1B, and a method for manufacturing a third light emitting device 1C, the method for manufacturing the first light emitting device 1A includes a step of dividing a first base material to manufacture ten or more first reflecting members 40A each having a first reflecting film 42A, and a step of arranging ten or less first semiconductor laser elements 20A and ten or less first reflecting members 40A in a first package. Note that the first base material refers to a base material 400 prepared for manufacturing the first reflecting members 40A.

[0202] In the method of manufacturing a plurality of light emitting devices 1, including the method of manufacturing the first light emitting device 1A, the method of manufacturing the second light emitting device 1B, and the method of manufacturing the third light emitting device 1C, the method of manufacturing the second light emitting device 1B includes a step of dividing a second base material to manufacture ten or more second reflecting members 40B each having a second reflecting film 42B, and a step of arranging ten or less second semiconductor laser elements 20B and ten or less second reflecting members 40B in a second package. Note that the second base material refers to a base material 400 prepared for manufacturing the second reflecting members 40B.

[0203] In the method of manufacturing a plurality of light emitting devices 1, including the method of manufacturing the first light emitting device 1A, the method of manufacturing the second light emitting device 1B, and the method of manufacturing the third light emitting device 1C, the method of manufacturing the third light emitting device 1C includes a step of dividing a third base material to manufacture ten or more third reflecting members 40C each having a third reflecting film 42C, and a step of arranging one or more third semiconductor laser elements 20C, one or more fourth semiconductor laser elements 20D, and ten or less third reflecting members 40C in a third package. The sum of the number of the third semiconductor laser elements 20C and the number of the fourth semiconductor laser elements 20D included in the third light emitting device 1C is ten or less. The third base material refers to a base material 400 prepared for manufacturing the third reflecting member 40C.

[0204] In this way, by employing multiple reflective members 40 manufactured from the same base material 400 in the light emitting device 1, the effects of component tolerances between base materials and processing variations in the manufacturing process of the reflective members 40 can be reduced, thereby improving the quality of the light emitted from the light emitting device 1.

[0205] Although each embodiment of the present invention has been described above, the light-emitting devices according to the present invention are not strictly limited to the light-emitting devices of the embodiments. In other words, the present invention can be realized without being limited to the external shape and structure of the light-emitting device disclosed in the embodiments. The present invention can be applied without necessarily having all the components. For example, if some of the components of the light-emitting device disclosed in the embodiments are not described in the claims, the freedom of design by those skilled in the art, such as substitution, omission, modification of shape, and change of material, is recognized for those some components, and the invention described in the claims is specified to be applied.

[0206] Through the contents described so far in this specification, the following technical matters are disclosed. (Section 1) A plurality of light emitting devices including a first light emitting device, a second light emitting device, and a third light emitting device, each of which has a package having the same external shape and in which a semiconductor laser element and a reflecting member are disposed, The first light emitting device is A first package, which is the package; a plurality of first semiconductor laser elements, each of which is disposed in the first package, emits light of a first color having a first emission peak wavelength, and is the semiconductor laser element; a plurality of first reflecting members, each of which is disposed in the first package, has a first light reflecting surface provided with a first reflecting film having a reflectance of 90% or more for the first wavelength, reflects the first color light emitted from the first semiconductor laser element, and is the reflecting member; The second light emitting device is A second package, which is the package; a plurality of second semiconductor laser elements each of which is disposed in the second package and emits light of a second color different from the first color and having an emission peak wavelength of a second wavelength, and which are the semiconductor laser elements; a plurality of second reflecting members, each of which is disposed in the second package, has a second light reflecting surface provided with a second reflecting film having a reflectance of 90% or more for the second wavelength, and reflects the second color light emitted from the second semiconductor laser element; The third light emitting device is a third package, which is the package; one or more third semiconductor laser elements that are disposed in the third package, emit the first color having an emission peak wavelength of a third wavelength, and are the semiconductor laser elements; one or more fourth semiconductor laser elements that are disposed in the third package, emit the second color having a fourth emission peak wavelength, and are the semiconductor laser elements; a plurality of third reflecting members, each of which is disposed in the third package, has a third light reflecting surface provided with a third reflecting film having a reflectance of 90% or more for the third wavelength and the fourth wavelength, the third reflecting member including the reflecting member that reflects the first color light emitted from the third semiconductor laser element and the fourth semiconductor laser element, and the reflecting member that reflects the second color light emitted from the fourth semiconductor laser element; the first light emitting device does not include the semiconductor laser element that emits the second color light having an emission peak wavelength of the second wavelength, and the semiconductor laser element that emits the second color light having an emission peak wavelength of the fourth wavelength, the second light emitting device does not include the semiconductor laser element that emits the first color light having an emission peak wavelength of the first wavelength, and the semiconductor laser element that emits the first color light having an emission peak wavelength of the third wavelength, a reflectance of the third reflective film for light of the first wavelength is higher than a reflectance of the second reflective film for light of the first wavelength, A plurality of light emitting devices, wherein the reflectance of the third reflective film for the light of the second wavelength is higher than the reflectance of the first reflective film for the light of the second wavelength. (Section 2) a reflectance of the third reflective film for light of the third wavelength is higher than a reflectance of the second reflective film for light of the third wavelength, Item 2. The plurality of light emitting devices according to item 1, wherein the reflectance of the third reflective film for the light of the fourth wavelength is higher than the reflectance of the first reflective film for the light of the fourth wavelength. (Section 3) Each of the third reflecting members has a lower surface, and the third light reflecting surface is inclined with respect to the lower surface. 3. The plurality of light emitting devices according to item 1 or 2, wherein a difference in width between the plurality of third reflecting members in a direction perpendicular to the lower surface is 15 μm or less. (Section 4) Each of the plurality of first reflecting members has a lower surface, and the first light reflecting surface is inclined with respect to the lower surface, Each of the plurality of second reflecting members has a lower surface, and the second light reflecting surface is inclined with respect to the lower surface, A member tolerance between the plurality of first reflecting members in a direction perpendicular to the lower surface is 15 μm or less; 4. The light emitting devices according to any one of items 1 to 3, wherein a member tolerance between the second reflecting members in a direction perpendicular to the lower surface is 15 μm or less. (Section 5) a difference between the first wavelength and the second wavelength is 30 nm or more; a difference between the third wavelength and the fourth wavelength is 30 nm or more; a difference between the first wavelength and the third wavelength is 15 nm or less; Item 5. The plurality of light emitting devices according to any one of items 1 to 4, wherein a difference between the second wavelength and the fourth wavelength is 15 nm or less. (Section 6) the first wavelength and the third wavelength are the same wavelength, Item 6. The plurality of light emitting devices according to any one of items 1 to 5, wherein the second wavelength and the fourth wavelength are the same wavelength. (Section 7) the first color is any one of red, green, and blue; Item 7. The plurality of light emitting devices according to any one of items 1 to 6, wherein the second color is any one of red, green, and blue. (Section 8) The first light emitting device and the second light emitting device are transferred to the same consumer or to different consumers; The first light emitting device and the third light emitting device are transferred to the same consumer or to different consumers; Item 8. The plurality of light emitting devices according to any one of items 1 to 7, wherein the second light emitting device and the third light emitting device are transferred to the same consumer or to different consumers. (Section 9) A method for manufacturing a plurality of light emitting devices, the method including: a method for manufacturing a first light emitting device; a method for manufacturing a second light emitting device; and a method for manufacturing a third light emitting device, A method for manufacturing the first light emitting device includes: A step of dividing a first base material to manufacture 10 or more first reflective members each having a first reflective film; disposing ten or less first semiconductor laser elements and ten or less first reflecting members in a first package; A method for manufacturing the second light emitting device includes: A step of dividing the second base material to manufacture 10 or more second reflective members each having a second reflective film; disposing ten or less second semiconductor laser elements and ten or less second reflecting members in a second package; The method for manufacturing the third light emitting device includes: A step of dividing the third base material to manufacture 10 or more third reflective members each having a third reflective film; disposing one or more third semiconductor laser elements, one or more fourth semiconductor laser elements, and ten or less of the third reflecting members in a third package; the first base material, the second base material, and the third base material are base materials formed from the same material; the first semiconductor laser element emits light of a first color having an emission peak wavelength of a first wavelength; the second semiconductor laser element emits light of a second color having an emission peak wavelength of a second wavelength; the third semiconductor laser element emits the first color light having an emission peak wavelength of a third wavelength, the fourth semiconductor laser element emits the second color light having a fourth wavelength as an emission peak wavelength, the sum of the number of the one or more third semiconductor laser elements and the number of the one or more fourth semiconductor laser elements is 10 or less; the first light emitting device does not include the semiconductor laser element that emits the second color light having an emission peak wavelength of the second wavelength, and the semiconductor laser element that emits the second color light having an emission peak wavelength of the fourth wavelength, the second light emitting device does not include the semiconductor laser element that emits the first color light having an emission peak wavelength of the first wavelength, and the semiconductor laser element that emits the first color light having an emission peak wavelength of the third wavelength, a reflectance of the third reflective film for light of the first wavelength is higher than a reflectance of the second reflective film for light of the first wavelength, a reflectance of the third reflective film for light of the second wavelength is higher than a reflectance of the first reflective film for light of the second wavelength; A method for manufacturing a plurality of light emitting devices. (Section 10) the first wavelength and the third wavelength are the same wavelength, Item 10. The manufacturing method according to item 9, wherein the second wavelength and the fourth wavelength are the same wavelength. [Industrial Applicability]

[0207] The light emitting device described in the embodiment can be used in a projector. In other words, a projector can be said to be one application form to which the present invention is applied. The present invention is not limited to this, and can be used in various applications such as illumination, exposure, in-vehicle headlights, head-mounted displays, and backlights for other displays. In addition, the first light emitting device, the second light emitting device, and the third light emitting device may be used in different applications, not limited to the case where they are all used in the same application form. [Explanation of symbols]

[0208] 1 Light emitting device 1A First light emitting device 1B Second light emitting device 1C Third light-emitting device 10 Packages 11 Base 11A 1st top surface 11B Bottom side 11C 2nd top surface 11D External surface 11E Inside surface 11F Step 11F1 First step 11F2 Second step 11G top surface 11H side 11M base 11N frame 12A wiring section 12A1 1st wiring section 12A2 2nd wiring section 13A Joint Pattern 14 Lid 14A Top 14B Bottom 14C side 20 Semiconductor laser element 20A First semiconductor laser element 20B Second semiconductor laser element 20C Third semiconductor laser element 20D Fourth semiconductor laser element Above 21A Below 21B Side 21C Light-emitting surface 22 Submount 30 Above 31A Below 31B Side 31C Substrate 32A Upper metal member 32B Lower metal member 32C Wiring layer 33 Reflection member 40 First reflection member 40A Second reflection member 40B Third reflection member 40C Below 41A Light reflection surface 41B First light reflection surface 41B1 Second light reflection surface 41B2 Third light reflection surface 41B3 Reflection film 42 First reflection film 42A Second reflection film 42B Third reflection film 42C Protection element 50 Above 51A Below 51B Side 51C Wiring 60 Optical member (lens member) 70 Above 71A Below 71B Side 71C Lens surface (optical action surface) 71D Lens part 72A Non-lens part 72B Base material 400 Metal film 401 Reflection film 402

Claims

1. A plurality of light emitting devices including a first light emitting device, a second light emitting device, and a third light emitting device, each of which has a package having the same outer shape and in which a semiconductor laser element and a reflecting member are disposed, The first light emitting device is a first package, the package being a first package; a plurality of first semiconductor laser elements, each of which is disposed in the first package, emits light of a first color having an emission peak wavelength of a first wavelength, and is the semiconductor laser element; a plurality of first reflecting members, each of which is disposed in the first package, has a first light reflecting surface provided with a first reflecting film having a reflectance of 90% or more for the first wavelength, reflects the first color light emitted from the first semiconductor laser element, and is the reflecting member; The second light emitting device is A second package, which is the package; a plurality of second semiconductor laser elements each of which is disposed in the second package and emits light of a second color different from the first color and having an emission peak wavelength of a second wavelength, and which are the semiconductor laser elements; a plurality of second reflecting members, each of which is disposed in the second package, has a second light reflecting surface provided with a second reflecting film having a reflectance of 90% or more for the second wavelength, and reflects the second color light emitted from the second semiconductor laser element; The third light emitting device is a third package, which is the package; one or more third semiconductor laser elements, which are disposed in the third package, emit the first color having an emission peak wavelength of a third wavelength, and are the semiconductor laser elements; one or more fourth semiconductor laser elements, which are disposed in the third package, emit the second color having a fourth emission peak wavelength, and are the semiconductor laser element; a plurality of third reflecting members, each of which is disposed in the third package, has a third light reflecting surface provided with a third reflecting film having a reflectance of 90% or more for the third wavelength and the fourth wavelength, the third reflecting member including the reflecting member that reflects the first color light emitted from the third semiconductor laser element and the fourth semiconductor laser element, and the reflecting member that reflects the second color light emitted from the fourth semiconductor laser element; the first light emitting device does not include the semiconductor laser element that emits the second color light having an emission peak wavelength of the second wavelength, and the semiconductor laser element that emits the second color light having an emission peak wavelength of the fourth wavelength, the second light emitting device does not include the semiconductor laser element that emits the first color light having an emission peak wavelength of the first wavelength, and the semiconductor laser element that emits the first color light having an emission peak wavelength of the third wavelength, a reflectance of the third reflective film for light of the first wavelength is higher than a reflectance of the second reflective film for light of the first wavelength, A plurality of light emitting devices, wherein the reflectance of the third reflective film for the light of the second wavelength is higher than the reflectance of the first reflective film for the light of the second wavelength.

2. a reflectance of the third reflective film for light of the third wavelength is higher than a reflectance of the second reflective film for light of the third wavelength, The plurality of light emitting devices according to claim 1 , wherein the reflectance of the third reflective film for the light of the fourth wavelength is higher than the reflectance of the first reflective film for the light of the fourth wavelength.

3. Each of the third reflecting members has a lower surface, and the third light reflecting surface is inclined with respect to the lower surface. The plurality of light emitting devices according to claim 1 , wherein a difference in width between the plurality of third reflecting members in a direction perpendicular to the lower surface is 15 μm or less.

4. Each of the plurality of first reflecting members has a lower surface, and the first light reflecting surface is inclined with respect to the lower surface, Each of the plurality of second reflecting members has a lower surface, and the second light reflecting surface is inclined with respect to the lower surface, A member tolerance between the plurality of first reflecting members in a direction perpendicular to the lower surface is 15 μm or less; The plurality of light emitting devices according to claim 1 , wherein a member tolerance between the plurality of second reflecting members in a direction perpendicular to the lower surface is 15 μm or less.

5. a difference between the first wavelength and the second wavelength is 30 nm or more; a difference between the third wavelength and the fourth wavelength is 30 nm or more; a difference between the first wavelength and the third wavelength is 15 nm or less; 2. The plurality of light emitting devices of claim 1, wherein the difference between the second wavelength and the fourth wavelength is 15 nm or less.

6. the first wavelength and the third wavelength are the same wavelength, The plurality of light emitting devices of claim 1 , wherein the second wavelength and the fourth wavelength are the same wavelength.

7. the first color is any one of red, green, and blue; 2. The multiple light emitting devices of claim 1, wherein the second color is any one of red, green, and blue.

8. The first light emitting device and the second light emitting device are transferred to the same consumer or to different consumers; The first light emitting device and the third light emitting device are transferred to the same consumer or to different consumers; The plurality of light emitting devices according to claim 1 , wherein the second light emitting device and the third light emitting device are transferred to the same consumer or to different consumers.

9. A method for manufacturing a plurality of light emitting devices, the method including: a method for manufacturing a first light emitting device; a method for manufacturing a second light emitting device; and a method for manufacturing a third light emitting device, A method of manufacturing the first light emitting device includes: A step of dividing a first base material to manufacture 10 or more first reflective members each having a first reflective film; disposing ten or less first semiconductor laser elements and ten or less first reflecting members in a first package; A method for manufacturing the second light emitting device includes: A step of dividing the second base material to manufacture 10 or more second reflective members each having a second reflective film; disposing ten or less second semiconductor laser elements and ten or less second reflecting members in a second package; A method for manufacturing the third light emitting device includes: A step of dividing the third base material to manufacture ten or more third reflective members each having a third reflective film; disposing one or more third semiconductor laser elements, one or more fourth semiconductor laser elements, and ten or less of the third reflecting members in a third package; the first base material, the second base material, and the third base material are base materials formed from the same material; the first semiconductor laser element emits light of a first color having an emission peak wavelength of a first wavelength; the second semiconductor laser element emits light of a second color having an emission peak wavelength of a second wavelength; the third semiconductor laser element emits the first color light having an emission peak wavelength of a third wavelength, the fourth semiconductor laser element emits the second color light having a fourth wavelength as an emission peak wavelength, the sum of the number of the one or more third semiconductor laser elements and the number of the one or more fourth semiconductor laser elements is 10 or less; a reflectance of the third reflective film for light of the first wavelength is higher than a reflectance of the second reflective film for light of the first wavelength, a reflectance of the third reflective film for light of the second wavelength is higher than a reflectance of the first reflective film for light of the second wavelength; A method for manufacturing a plurality of light emitting devices.

10. the first wavelength and the third wavelength are the same wavelength, The method of claim 9 , wherein the second wavelength and the fourth wavelength are the same wavelength.

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