Transfer apparatus and adsorption method

Abstract

To provide a technology that makes it difficult for scratches to be generated on a semiconductor element.SOLUTION: A transfer apparatus for transferring a semiconductor element has a collet and an air supply and exhaust system. The collet has an adsorption surface and a plurality of holes opening toward the adsorption surface, and the semiconductor element is adsorbed by the adsorption surface. The air supply and exhaust system provides intake and exhaust for the plurality of holes. The collet adsorbs the semiconductor element at the adsorption surface when exhausting the plurality of holes, and releases the semiconductor element from the adsorption surface when air is supplied to the plurality of holes.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to the transfer of semiconductor devices. [Background technology]

[0002] When a semiconductor element is transferred to a predetermined location, for example, a collet moves while adsorbing the semiconductor element, and then the collet releases the adsorption, allowing the semiconductor element to be released from the collet and placed in the predetermined location. Patent Document 1 describes a technology in which a collet adsorbs a semiconductor element. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-110262 Summary of the Invention [Problem to be solved by the invention]

[0004] If foreign matter such as dust or cutting chips adheres to the surface of the collet that attracts the semiconductor element, or if the foreign matter adheres to the semiconductor element itself, the foreign matter may become pinched between the collet and the semiconductor element, causing scratches on the semiconductor element. If scratches occur on the semiconductor element, for example, production yield will decrease.

[0005] Therefore, the present disclosure has been made in consideration of the above points, and aims to provide a technique that makes it difficult for scratches to occur in semiconductor elements. [Means for solving the problem]

[0006] One aspect of the transfer device is a transfer device that transfers semiconductor elements. The transfer device includes a collet and an air supply / exhaust device. The collet has an adsorption surface and a plurality of holes that open toward the adsorption surface, and adsorbs the semiconductor elements using the adsorption surface. The air supply / exhaust device draws and exhausts air through the plurality of holes. The collet adsorbs the semiconductor elements using the adsorption surface when air is exhausted through the plurality of holes, and releases the semiconductor elements from the adsorption surface when air is supplied through the plurality of holes.

[0007] One aspect of the transfer device is a transfer device that transfers a semiconductor element. The transfer device includes a collet, an exhaust device, an air passage section, and an air supply device. The collet has an adsorption surface and a hole that opens toward the adsorption surface, and adsorbs the semiconductor element using the adsorption surface. The exhaust device exhausts air from the hole. The air passage section includes an air passage having an exhaust port that discharges gas. The air supply device supplies air to the air passage and discharges the gas from the exhaust port. The exhaust port has a first exhaust port that surrounds the adsorption surface when viewed from the adsorption surface side. The first exhaust port discharges gas in a first direction toward which the adsorption surface faces, or in a second direction that is perpendicular to the first direction and toward the adsorption surface side.

[0008] One aspect of the suction method is a method for suctioning a semiconductor element using the transfer device described above. The suction method includes a first step of discharging gas from an exhaust port to move foreign matter on the semiconductor element toward the center of the semiconductor element. The suction method also includes a second step, after the first step, of evacuating the hole to suck the foreign matter into the hole. The suction method also includes a third step, after the second step, of bringing the suction surface into contact with the semiconductor element while the hole is being evacuated, and suctioning the semiconductor element with the suction surface. [Effects of the Invention]

[0009] This makes it difficult for scratches to occur on semiconductor elements.

[0010] The objects, features, aspects, and advantages of the present disclosure will become more apparent from the following detailed description and the accompanying drawings. [Brief explanation of the drawings]

[0011] [Figure 1] FIG. 2 is a schematic diagram illustrating an example of the configuration of a transfer device. [Figure 2] FIG. 2 is a schematic diagram showing an example of an adsorption surface of a collet. [Figure 3] FIG. 2 is a schematic diagram showing an example of a cross-sectional structure of a collet. [Figure 4] 10 is a flowchart showing an example of an operation of the transfer device. [Figure 5] 10 is a schematic diagram showing an example of a state in which gas is discharged from a hole in a collet. FIG. [Figure 6] FIG. 2 is a schematic diagram showing an example of an adsorption surface of a collet. [Figure 7] FIG. 2 is a schematic diagram showing an example of an adsorption surface of a collet. [Figure 8] FIG. 2 is a schematic diagram illustrating an example of the configuration of a transfer device. [Figure 9] FIG. 2 is a schematic diagram illustrating an example of the configuration of a transfer device. [Figure 10] FIG. 10 is a schematic diagram showing an example of a side air passage portion and a collet viewed from below. [Figure 11] 10 is a flowchart showing an example of an operation of the transfer device. [Figure 12] 10 is a schematic diagram showing an example of a state in which foreign matter moves to the center of a semiconductor element by gas discharged from an exhaust port. FIG. [Figure 13] FIG. 2 is a schematic diagram illustrating an example of the configuration of a transfer device. [Figure 14] FIG. 2 is a schematic diagram illustrating an example of the configuration of a transfer device. DETAILED DESCRIPTION OF THE INVENTION

[0012] Embodiment 1 <Overview of the transfer device> FIG. 1 is a schematic diagram showing an example of the configuration of a transfer device 1 according to the first embodiment. The transfer device 1 is capable of holding a semiconductor element 2 and transferring it to a predetermined location. The predetermined location may be a circuit board or a tray. The transfer device 1 is used, for example, in the manufacturing process of a semiconductor device. In this case, the transfer device 1 can also be said to be a semiconductor device.

[0013] The semiconductor element 2 is, for example, a plate-shaped semiconductor chip diced from a semiconductor wafer. The semiconductor chip is also called, for example, a wafer chip or a die. The semiconductor element 2 may be formed of, for example, a semiconductor such as Si, or may be formed of a so-called wide bandgap semiconductor such as SiC, GaN, Ga2O3, or diamond. The outer shape of the semiconductor element 2 is, for example, rectangular.

[0014] The transfer device 1 includes, for example, a collet 3, a collet holder 4, a connection unit 5, an air supply / exhaust device 20, a movement mechanism 23, and a control unit 25. In Fig. 1, cross sections of the collet 3, the collet holder 4, and the connection unit 5 are indicated by diagonal lines.

[0015] The collet 3 can suction and hold the semiconductor element 2. The collet 3 may be made of resin or metal. The collet 3 suctions the upper surface of the semiconductor element 2 from above. The collet 3 can also release the suction of the semiconductor element 2 and release the held semiconductor element 2. The collet 3 can, for example, individually suction and hold each of multiple semiconductor elements 2 attached to a mounting sheet 8. The mounting sheet 8 is also called a dicing sheet. The semiconductor elements 2 may be placed on a member other than the mounting sheet 8.

[0016] The collet holder 4 holds the collet 3. The collet holder 4 may be made of resin or metal. The collet holder 4 is connected to the air intake and exhaust device 20 by a connection part 5. The connection part 5 may be, for example, a hose made of resin or the like. The air intake and exhaust device 20 can exhaust gas from within the collet 3, collet holder 4, and connection part 5, and can supply gas into the collet 3, collet holder 4, and connection part 5. The air intake and exhaust device 20 exhausts gas from within the collet 3, collet holder 4, and connection part 5, allowing the collet 3 to adsorb the semiconductor element 2.

[0017] The moving mechanism 23 can move the collet 3. The collet 3 that has adsorbed the semiconductor element 2 is moved by the moving mechanism 23, and the semiconductor element 2 moves to a predetermined location (for example, a circuit board). Thereafter, the collet 3 releases the adsorption of the semiconductor element 2, and the semiconductor element 2 is detached from the collet 3 and placed in the predetermined location (for example, a circuit board). The control unit 25 can control the operations of the air supply and exhaust device 20 and the moving mechanism 23.

[0018] <Details of each component of the transfer device> The collet 3 has an adsorption surface 30 that comes into contact with the semiconductor element 2. The collet 3 adsorbs the semiconductor element 2 using the adsorption surface 30. The outer shape of the adsorption surface 30 is, for example, circular. Figure 2 is a schematic diagram showing an example of the adsorption surface 30 shown in Figure 1 as viewed from below.

[0019] The collet 3 has a plurality of holes 35 that open toward the suction surface 30. For example, each hole 35 is cylindrical and extends in the vertical direction. Each hole 35 functions as a vent hole or a ventilation path through which gas passes.

[0020] The connecting portion 5, the collet holder 4, and the collet 3 are provided with a common ventilation path 6 through which gas passes. Each hole 35 is connected to the ventilation path 6. The upper opening of each hole 35 (in other words, the opening on the opposite side from the suction surface 30) is connected to the ventilation path 6. The air supply and exhaust device 20 can supply and exhaust air to and from the ventilation path 6 and each hole 35. The ventilation path 6 can also be said to be an air supply and exhaust path.

[0021] The air intake and exhaust device 20 includes, for example, a pump. The air intake and exhaust device 20 can exhaust air from the air passage 6 and each hole 35. The air intake and exhaust device 20 can also supply gas 10 into the air passage 6 and each hole 35. The gas 10 may be air or an inert gas such as nitrogen gas or argon gas. The gas 10 exhausted by the air intake and exhaust device 20 passes through the air passage 6 and then each hole 35, and is discharged to the outside of the collet 3 from the lower opening of each hole 35 (in other words, the opening on the suction surface 30 side). The opening of each hole 35 on the suction surface 30 side can also be considered to be an opening provided in the suction surface 30. In FIG. 1, the flow of gas 10 is indicated by arrows. The flow of gas 10 will be described in detail later.

[0022] The collet 3 can suction the semiconductor element 2 onto the suction surface 30 when the air supply / exhaust device 20 evacuates the air passage 6 and each hole 35. The collet 3 can also separate the semiconductor element 2 from the suction surface 30 when the air supply / exhaust device 20 supplies air to the air passage 6 and each hole 35.

[0023] 3 is an enlarged schematic diagram of the collet 3 shown in FIG. 1. The plurality of holes 35 of the collet 3 includes, for example, a hole 35a having a relatively large diameter da and at least one hole 35b having a relatively small diameter db. The plurality of holes 35 includes, for example, a plurality of holes 35b. The diameters db of the plurality of holes 35b are, for example, the same. The plurality of holes 35 includes a plurality of holes 35a and 35b having different diameters.

[0024] The diameter da of hole 35a may be, for example, two or more times, three or more times, four or more times, five or more times, six or more times, seven or more times, eight or more times, nine or more times, or ten or more times the diameter db of hole 35b.

[0025] As shown in FIG. 2, when the multiple holes 35 are viewed from the adsorption surface 30 side, the outer shape of each hole 35 is circular. In other words, the opening of each hole 35 on the adsorption surface 30 side is circular. When the multiple holes 35 are viewed from the adsorption surface 30 side, for example, the multiple holes 35b are located around hole 35a. When viewed from the adsorption surface 30 side, the center of hole 35a coincides with the center of the circular adsorption surface 30, for example. When viewed from the adsorption surface 30 side, in the examples of FIGS. 1 to 3, it can be seen that the annular adsorption surface 30 is located around hole 35a, or that hole 35a is located inside the annular adsorption surface 30.

[0026] When viewed from the adsorption surface 30 side, the plurality of holes 35b may surround the hole 35a as shown in Fig. 2. In this case, when viewed from the adsorption surface 30 side, the plurality of holes 35b may be arranged at equal intervals so as to surround the hole 35a as shown in Fig. 2.

[0027] The edge of each hole 35 on the adsorption surface 30 side is chamfered. The edge may be rounded or C-chamfered. As a result, as shown in FIG. 3 , an inner circumferential surface 350 of the end of each hole 35 on the adsorption surface 30 side widens outward toward the adsorption surface 30. The inner circumferential surface 350a of the end of hole 35a on the adsorption surface 30 side widens outward toward the adsorption surface 30, and the inner circumferential surface 350b of the end of hole 35b on the adsorption surface 30 side widens outward toward the adsorption surface 30. In the example shown in FIG. 3 , the edge of each hole 35 on the adsorption surface 30 side is rounded. Therefore, the inner circumferential surface 350 is an inclined curved surface (i.e., an R-surface) that slopes outward in the vertical direction. Note that when the edge of hole 35 on the adsorption surface 30 side is C-chamfered, the inner circumferential surface 350 of the end of hole 35 on the adsorption surface 30 side becomes an inclined flat surface (i.e., a C-surface) that slopes outward in the vertical direction.

[0028] In the example of FIG. 3 , the outer edge of the suction surface 30 is also chamfered. In the example of FIG. 3 , the outer edge of the suction surface 30 is rounded, but it may be chamfered. The rounded or curved surface formed on the edge of the hole 35a facing the suction surface 30 and the rounded or curved surface formed on the edge of the hole 35b facing the suction surface 30 may or may not be connected to each other. In the example of FIG. 3 , the rounded surface formed on the edge of the hole 35a facing the suction surface 30 and the rounded surface formed on the edge of the hole 35b facing the suction surface 30 are not connected to each other. Furthermore, the rounded or curved surface formed on the outer edge of the suction surface 30 and the rounded or curved surface formed on the edge of the hole 35b facing the suction surface 30 may or may not be connected to each other. In the example of FIG. 3 , the rounded surface formed on the outer edge of the suction surface 30 and the rounded surface formed on the edge of the hole 35b facing the suction surface 30 are not connected to each other. Furthermore, in two adjacent holes 35b, the R-surface or C-surface formed on the edge of one hole 35b on the adsorption surface 30 side and the R-surface or C-surface formed on the edge of the other hole 35b on the adsorption surface 30 side may or may not be connected to each other.

[0029] The movement mechanism 23 can move the collet 3 in, for example, three-dimensional directions. The movement mechanism 23 can move the collet 3, for example, in the vertical direction, and can also move it in the horizontal direction perpendicular to the vertical direction. The movement mechanism 23 is connected to, for example, the collet holder 4, and can move the collet 3 by moving the collet holder 4. The movement mechanism 23 may move the collet 3, for example, by an arm mechanism having multiple joints, or may move the collet 3 by another actuator.

[0030] The control unit 25 can control the operations of the air supply and exhaust device 20 and the moving mechanism 23. Under the control of the control unit 25, the air supply and exhaust device 20 can exhaust air from the air passage 6 and each hole 35, and supply air to the air passage 6 and each hole 35. Under the control of the control unit 25, the moving mechanism 23 can move the collet 3.

[0031] The control unit 25 includes, for example, a processing circuit and a storage device. The processing circuit includes, for example, at least one processor. The processing circuit may include, for example, a CPU (Central Processing Unit), which is a type of processor. The processing circuit may include multiple CPUs, at least one DSP (Digital Signal Processor), or a processor other than a CPU or DSP.

[0032] The storage device included in the control unit 25 includes, for example, non-transitory recording media readable by a processor such as a CPU, such as a read-only memory (ROM) and a random access memory (RAM). The storage device may include at least one semiconductor memory selected from the group consisting of a flash memory, an erasable programmable read-only memory (EPROM), and an electrically erasable programmable read-only memory (EEPROM). The storage device may also include at least one hard disk drive (HDD) and a solid state drive (SSD). The storage device may also include at least one of a magnetic disk, a flexible disk, an optical disk, a compact disk, a minidisc, and a digital versatile disk (DVD), along with a drive device for each. The storage device stores a control program for controlling the operation of the control unit 25. The processor of the processing circuit executes the control program stored in the storage device to realize various functions of the processing circuit.

[0033] At least a portion of the processing circuitry may be implemented by hardware circuits that do not require software to implement their functions. In this case, at least a portion of the processing circuitry may be configured by at least one of a single circuit, a composite circuit, a programmed processor, a parallel programmed processor, an ASIC (Application Specific Integrated Circuit), and an FPGA (Field-Programmable Gate Array).

[0034] <Example of transfer device operation> 4 is a schematic diagram showing an example of the operation of the transfer device 1. In step s1, the moving mechanism 23 moves the collet 3 under the control of the control unit 25, and brings the suction surface 30 of the collet 3 into contact with the upper surface of the semiconductor element 2.

[0035] Next, in step s2, the air supply and exhaust device 20, under the control of the control unit 25, starts, for example, vacuuming to begin exhausting the air from the air passage 6 and each hole 35. As a result, in step s3, the collet 3 suctions the semiconductor element 2 on the suction surface 30.

[0036] Next, in step s4, the moving mechanism 23, under the control of the control unit 25, moves the collet 3 so that the semiconductor element 2 moves to a predetermined location. Next, in step s5, the air intake and exhaust device 20, under the control of the control unit 25, starts supplying air to the air passage 6 and each hole 35. That is, the air intake and exhaust device 20 starts supplying the gas 10 into the air passage 6 and each hole 35. As a result, the gas 10 exhausted from the air intake and exhaust device 20 passes through the air passage 6 and each hole 35 and hits the semiconductor element 2 that has been sucked onto the suction surface 30. As a result, in step s6, the collet 3 releases the semiconductor element 2 that it had been sucking from the suction surface 30. The semiconductor element 2 that has been released from the suction surface 30 is placed in a predetermined location.

[0037] When the collet 3 releases the semiconductor element 2, the air supply / exhaust device 20 stops supplying air to the air passage 6 and each hole 35 in step s7.

[0038] After step s7, step s1 is executed again, and the suction surface 30 of the collet 3 comes into contact with the upper surface of the next semiconductor element 2. Thereafter, steps s2 to s7 are executed, and the next semiconductor element 2 is transferred to a predetermined location. Thereafter, the transfer device 1 operates in the same manner.

[0039] When step s5 is executed, the gas 10 discharged from the air supply / exhaust device 20 is discharged from the openings of the holes 35 on the suction surface 30 side toward the semiconductor element 2 from the end of step s6 until the start of step s7, that is, from the time the collet 3 releases the semiconductor element 2 until the air supply to the air passage 6 and each hole 35 is completed. In FIG. 1, the flow of the gas 10 from the end of step s6 until the start of step s7 is indicated by arrows. The flow of the gas 10 from the end of step s6 until the start of step s7 will be described below.

[0040] <An example of the flow of gas being discharged from the collet hole> When gas 10 discharged from air intake and exhaust device 20 is discharged from holes 35, part of gas 10 is discharged as exhaust gas 11 from holes 35a having a relatively large diameter, as shown in Fig. 1. Also, part of gas 10 is discharged as exhaust gas 12 from holes 35b having a relatively small diameter, as shown in Fig. 1.

[0041] A portion of the exhaust gas 11 and a portion of the exhaust gas 12 hit the surface (more specifically, the upper surface) of the semiconductor element 2, and then become surface flow gas 13 (also referred to as surface flow gas 13) that flows along the surface of the semiconductor element 2 toward the outer edge of the semiconductor element 2.

[0042] Furthermore, the pressure of the exhaust gas 12 discharged from the holes 35b is greater than atmospheric pressure. Therefore, a portion of the exhaust gas 12 flows around the suction surface 30 into an intermediate region 300 (see FIGS. 1 and 3 ) between the outer edge of the suction surface 30 and the holes 35b, generating a turbulent gas 12a (also referred to as turbulent gas 12a) near the intermediate region 300. Therefore, as shown in FIG. 1 , if a foreign object 100 adheres to the intermediate region 300, the foreign object 100 can be removed by the turbulent gas 11a. Therefore, after step s7, when the collet 3 suctions the next semiconductor element 2 on the suction surface 30, the possibility of the foreign object being trapped between the suction surface 30 and the semiconductor element 2 is reduced. As a result, scratches on the semiconductor element 2 are less likely to occur.

[0043] In this example, foreign matter adhering to an intermediate region between two adjacent holes 35b on the suction surface 30 can also be removed by the exhaust gas 12 from the two holes 35b. This point will be described below.

[0044] 5 is a schematic diagram showing an example of a portion of the cross-sectional structure of the collet 3 when the collet 3 is cut along the circumferential direction of the suction surface 30 so as to pass through the multiple holes 35b. Two adjacent holes 35b are shown in FIG. 5. Hereinafter, the two adjacent holes 35b may be referred to as holes 35ba and 35bb. Furthermore, the intermediate region between the two holes 35ba and 35bb on the suction surface 30 may be referred to as intermediate region 302.

[0045] In this example, the pressure of the exhaust gas 12 from each hole 35b is the same. Therefore, as shown in FIG. 5 , a portion 12b of the exhaust gas 12 from one hole 35ba and a portion 12b of the exhaust gas 12 from the other hole 35bb flow around to the intermediate region 302. Then, the portions 12b of the exhaust gas 12 from the holes 35ba and 35bb collide near the intermediate region 302 and then flow toward the semiconductor element 2. The portions 12b of the exhaust gas 12 from the holes 35ba and 35bb hit the surface of the semiconductor element 2, become part of the surface flow gas 13, and flow along the surface of the semiconductor element 2 toward the outer edge of the semiconductor element 2.

[0046] In this way, a portion 12b of the exhaust gas 12 from the two adjacent holes 35ba and 35bb flows around into the intermediate region 302 between the two holes 35ba and 35bb. This makes it possible to remove foreign matter adhering to the intermediate region 302. Therefore, after step s7, when the collet 3 suctions the next semiconductor element 2 onto the suction surface 30, the possibility of foreign matter being trapped between the suction surface 30 and the semiconductor element 2 is reduced. As a result, scratches on the semiconductor element 2 are less likely to occur.

[0047] Furthermore, in this example, the diameter da of the hole 35a is larger than the diameter db of the hole 35b. Therefore, the flow rate of the exhaust gas 11 from the hole 35a is larger than the flow rate of the exhaust gas 12 from the hole 35b, and the pressure of the exhaust gas 11 is larger than the pressure of the exhaust gas 12. As a result, a portion of the exhaust gas 11 flows around the suction surface 30 into an intermediate region 301 (see FIGS. 1 and 3 ) between the holes 35a and 35b, generating a turbulent gas 11a (also referred to as turbulent gas 11a) near the intermediate region 301. Therefore, if a foreign substance 101 adheres to the intermediate region 301, as in the example of FIG. 1 , the foreign substance 101 can be removed by the turbulent gas 11a. Therefore, after step s7, when the collet 3 suctions the next semiconductor element 2 on the suction surface 30, the possibility of the foreign substance being trapped between the suction surface 30 and the semiconductor element 2 is reduced. As a result, the semiconductor element 2 is less likely to be scratched.

[0048] Furthermore, even if the foreign matter removed from the adsorption surface 30 by the turbulent gases 11a and 12a etc. falls onto the surface (specifically the upper surface) of the semiconductor element 2, the foreign matter on the semiconductor element 2 can be moved to the outside of the semiconductor element 2 by the surface flow gas 13 and removed.

[0049] When the transfer device 1 repeatedly executes the transfer process consisting of the above-described steps s1 to s7, the air intake and exhaust device 20 may supply air to the ventilation path 6 and each hole 35 before step s2 of the first transfer process. For example, before step s1 of the first transfer process, or between steps s1 and s2 of the first transfer process, the air intake and exhaust device 20 may supply air to the ventilation path 6 and each hole 35. This makes it possible to remove foreign matter adhering to the suction surface 30 before the first transfer process is executed.

[0050] In addition, the air supply and exhaust device 20 may be provided with a separate air supply and exhaust device that supplies and exhausts air to and from hole 35a and a separate air supply and exhaust device that supplies and exhausts air to and from each hole 35b, so that the air supply and exhaust to and from hole 35a and the air supply and exhaust to each hole 35b can be performed independently.

[0051] Furthermore, the multiple holes 35 opening toward the adsorption surface 30 are not limited to the above example. For example, when the multiple holes 35b are viewed from the adsorption surface 30 side, the multiple holes 35b may be arranged at uneven intervals. When viewed from the adsorption surface 30 side, the multiple holes 35b may be provided in a portion of the periphery of the hole 35a, and may not necessarily surround the hole 35a. Furthermore, the multiple holes 35 may include only one hole 35b.

[0052] Furthermore, the plurality of holes 35b having diameters smaller than those of the holes 35a may include at least one hole 35b1 having a relatively large diameter and at least one hole 35b2 having a relatively small diameter. Figure 6 is a schematic diagram showing an example of the plurality of holes 35 in this case. In the example of Figure 6, the plurality of holes 35b includes the plurality of holes 35b1 and the plurality of holes 35b2.

[0053] The holes 35b1 have the same diameter, and the holes 35b2 have the same diameter. The diameter of hole 35b1 is smaller than the diameter of hole 35a and larger than the diameter of hole 35b2. The diameter of hole 35b2 is smaller than the diameters of holes 35a and 35b1.

[0054] When viewed from the adsorption surface 30 side, for example, the plurality of holes 35b1 and the plurality of holes 35b2 are positioned alternately. Therefore, when viewed from the adsorption surface 30 side, one hole 35b2 is always positioned between two adjacent holes 35b1, and one hole 35b1 is always positioned between two adjacent holes 35b2.

[0055] When viewed from the adsorption surface 30 side, the plurality of holes 35b1 are arranged at equal intervals, for example, to surround the hole 35a. When viewed from the adsorption surface 30 side, the plurality of holes 35b2 are arranged at equal intervals, for example, to surround the hole 35a. When viewed from the adsorption surface 30 side, the plurality of holes made up of the plurality of holes 35b1 and the plurality of holes 35b2 are arranged at equal intervals, for example, to surround the hole 35a.

[0056] In this example, the diameter of hole 35b1 is larger than the diameter of hole 35b2. Therefore, the flow rate of exhaust gas 12 (also referred to as first exhaust gas 12) from hole 35b1 is larger than the flow rate of exhaust gas 12 (also referred to as second exhaust gas 12) discharged from hole 35b2, and the pressure of first exhaust gas 12 is larger than the pressure of second exhaust gas 12. As a result, part of first exhaust gas 12 flows around to intermediate region 303 (see FIG. 6 ) between hole 35b1 and hole 35b2 on adsorption surface 30, generating turbulent gas flow near intermediate region 303. Therefore, foreign matter adhering to intermediate region 303 can be removed by the turbulent gas flow generated near intermediate region 303. It is easier to remove foreign matter by turbulent gas generated near the intermediate region 303 as in the example of Figure 6 than by part 12b of exhaust gas 12 that flows around to the intermediate region 302 as in the example of Figure 5.

[0057] When viewed from the adsorption surface 30 side, the multiple holes 35b1 may be arranged at uneven intervals, and the multiple holes 35b2 may be arranged at uneven intervals. When viewed from the adsorption surface 30 side, the multiple holes 35b1 may not surround the hole 35a, and the multiple holes 35b2 may not surround the hole 35a. The multiple holes 35b may include only one hole 35b1 or only one hole 35b2. Multiple holes 35b2 may be located between two adjacent holes 35b1, and multiple holes 35b1 may be located between two adjacent holes 35b2. The multiple holes 35 may include at least one hole 35b1 and at least one hole 35b2, but may not include hole 35a.

[0058] In the above example, the plurality of holes 35 includes a plurality of holes having different diameters, but the plurality of holes 35 may have the same diameter. Fig. 7 is a schematic diagram showing an example of the plurality of holes 35 in this case. Fig. 8 is a schematic diagram showing an example of a transfer device 1 including a collet 3 having the suction surface 30 shown in Fig. 7.

[0059] 7 and 8, the diameters of the multiple holes 35 are set to be the same. The multiple holes 35 include multiple holes 35c that are arranged in point symmetry with respect to the center 30a of the adsorption surface 30 when viewed from the adsorption surface 30 side. When the multiple holes 35c are viewed from the adsorption surface 30 side, for each hole 35c, another hole 35c exists at a position 180 degrees opposite the position of the hole 35c with respect to the center 30a.

[0060] The plurality of holes 35 also includes a hole 35d located at the center 30a (in other words, the center of symmetry) of the adsorption surface 30 when viewed from the adsorption surface 30 side. The center of the hole 35d when viewed from the adsorption surface 30 side coincides with the center 30a of the adsorption surface 30. When viewed from the adsorption surface 30 side, the plurality of holes 35, each consisting of a plurality of holes 35c and holes 35d, are arranged, for example, in a hexagonal shape at equal intervals. In the example of FIG. 7, the distance between two adjacent holes 35 is the same for any combination of holes 35.

[0061] 7 and 8, the gas 10 discharged from the air intake and exhaust device 20 is discharged as exhaust gas 14 from each hole 35. Exhaust gas 14 is discharged from each of holes 35c and 35d.

[0062] A portion of the exhaust gas 14 from each hole 35 hits the surface (specifically the upper surface) of the semiconductor element 2, and then becomes surface flow gas 15 (also referred to as surface flow gas 15) that flows along the surface of the semiconductor element 2 toward the outer edge of the semiconductor element 2.

[0063] Furthermore, the pressure of the exhaust gas 14 discharged from the holes 35 is greater than atmospheric pressure. Therefore, a portion of the exhaust gas 14 flows around the suction surface 30 into an intermediate region between the outer edge of the suction surface 30 and the holes 35c, generating turbulent gas 14a (also referred to as turbulent gas 14a) near the intermediate region (see FIG. 8). Therefore, as shown in FIG. 8, foreign matter 110 adhering to the intermediate region can be removed by the turbulent gas 14a. Therefore, after step s7, when the collet 3 suctions the next semiconductor element 2 on the suction surface 30, the possibility of foreign matter being trapped between the suction surface 30 and the semiconductor element 2 is reduced. As a result, scratches on the semiconductor element 2 are less likely to occur.

[0064] In this example, the pressure of the exhaust gas 14 from each hole 35 is the same. Therefore, as shown in FIG. 8 , a portion 14b of the exhaust gas 14 from a hole 35 flows around to the intermediate region between the hole 35 and the adjacent hole 35. The portions 14b of the exhaust gas 14 from two adjacent holes 35 collide with each other near the intermediate region between the two holes 35 on the chucking surface 30, and then flow toward the semiconductor element 2. The portions 14b of the exhaust gas 14 from the two adjacent holes 35 hit the surface of the semiconductor element 2, become part of the surface flow gas 15, and flow along the surface of the semiconductor element 2 toward the outer edge of the semiconductor element 2.

[0065] In this way, part 14b of the exhaust gas 14 from two adjacent holes 35 flows around into the intermediate region between the two holes 35. This makes it possible to remove foreign matter adhering to the intermediate region. Therefore, after step s7, when the collet 3 suctions the next semiconductor element 2 onto the suction surface 30, the possibility of foreign matter being trapped between the suction surface 30 and the semiconductor element 2 is reduced. As a result, scratches on the semiconductor element 2 are less likely to occur.

[0066] Furthermore, even if the foreign matter removed from the adsorption surface 30 by the turbulent gas 14a or the like falls onto the surface (specifically the upper surface) of the semiconductor element 2, the foreign matter on the semiconductor element 2 can be moved to the outside of the semiconductor element 2 by the surface flow gas 15 and removed.

[0067] The arrangement of the multiple holes 35 when viewed from the adsorption surface 30 side is not limited to the example in FIG. 7. For example, when viewed from the adsorption surface 30 side, the multiple holes 35 may be arranged in a square shape. Also, when viewed from the adsorption surface 30 side, the multiple holes 35 may be arranged at uneven intervals. Also, the multiple holes 35 do not have to include hole 35d. Also, the multiple holes 35 do not have to include multiple holes 35c that are arranged point-symmetrically with respect to the center 30a of the adsorption surface 30 when viewed from the adsorption surface 30 side.

[0068] As described above, in the transfer device 1, air is supplied to and exhausted from the plurality of holes 35 that open toward the suction surface 30. As a result, when air is supplied to the plurality of holes and the semiconductor element 2 is detached from the suction surface 30 of the collet 3, foreign matter adhering to the suction surface 30 can be removed by the gas exhausted from the plurality of holes. This reduces the possibility of foreign matter becoming trapped between the suction surface 30 and the semiconductor element 2, and as a result, scratches on the semiconductor element 2 are less likely to occur.

[0069] For example, turbulent gas generated in the vicinity of the intermediate region of the adsorption surface 30 between the outer edge of the adsorption surface 30 and the holes 35 can remove foreign matter adhering to the intermediate region.

[0070] 2 and 6, when the plurality of holes 35 includes a plurality of holes with different diameters, foreign matter adhering to the intermediate region can be removed by turbulent gas generated near the intermediate region between the two holes with different diameters on the adsorption surface 30. In the examples of FIGS. 2 and 6, foreign matter adhering to the intermediate region can be removed by turbulent gas generated near the intermediate region between the two holes 35a and 35b with different diameters on the adsorption surface 30. In the example of FIG. 6, foreign matter adhering to the intermediate region can be removed by turbulent gas generated near the intermediate region between the two holes 35b1 and 35b2 with different diameters on the adsorption surface 30.

[0071] In addition, in the examples of Figures 2 and 7, the gas discharged from two holes of the same diameter flows around to the intermediate region between the two holes on the adsorption surface 30, thereby removing foreign matter adhering to the intermediate region.

[0072] 2 and 6, when the plurality of holes 35b are positioned around the hole 35a when viewed from the adsorption surface 30 side, a turbulent gas flow can be generated over a wide area of ​​the adsorption surface 30. This makes it possible to remove foreign matter adhering to the adsorption surface 30 over a wide area.

[0073] 2 and 6, when viewed from the adsorption surface 30 side, if multiple holes 35b surround hole 35a, turbulent gas can be generated over a wider area of ​​the adsorption surface 30. This makes it possible to remove foreign matter adhering to the adsorption surface 30 over a wider area.

[0074] 2 and 6, when viewed from the adsorption surface 30 side, if the plurality of holes 35b surrounding the hole 35a are arranged at equal intervals, it is possible to improve the uniformity of the distribution of the gas discharged from the plurality of holes 35 along the adsorption surface 30. This makes it easier to stably remove foreign matter adhering to the adsorption surface 30 over a wide area, regardless of where the foreign matter adheres on the adsorption surface 30.

[0075] Furthermore, as in the example of Figure 6, when the multiple holes 35b include at least one hole 35b1 having a diameter smaller than hole 35a and at least one hole 35b2 having a diameter smaller than hole 35a and at least one hole 35b1, it is easier to remove foreign matter adhering to the adsorption surface 30 than when the multiple holes 35b have the same diameter as each other, as in the example of Figure 2.

[0076] 6, when the plurality of holes 35b includes a plurality of holes 35b1, it is possible to remove foreign matter adhering to the adsorption surface 30 over a wide range. When the plurality of holes 35b includes a plurality of holes 35b2, it is possible to remove foreign matter adhering to the adsorption surface 30 over a wide range.

[0077] 6, when viewed from the adsorption surface 30 side, if the plurality of holes 35b surround the hole 35a, and the plurality of holes 35b1 included in the plurality of holes 35b and the plurality of holes 35b2 included in the plurality of holes 35b are alternately positioned one by one, it is possible to improve the uniformity of the in-plane distribution of the gas discharged from the plurality of holes 35 along the adsorption surface 30. This makes it easier to stably remove foreign matter adhering to the adsorption surface 30 over a wide area.

[0078] 7, when the plurality of holes 35 includes a plurality of holes 35c arranged in point symmetry with respect to the center 30a of the adsorption surface 30 as the center of symmetry when viewed from the adsorption surface 30 side, it is possible to improve the uniformity of the distribution of the gas discharged from the plurality of holes 35 along the adsorption surface 30. This makes it easier to stably remove foreign matter adhering to the adsorption surface 30.

[0079] 7, when the plurality of holes 35 includes not only the plurality of holes 35c but also the hole 35d located at the center 30a of the adsorption surface 30 when viewed from the adsorption surface 30 side, it is possible to further improve the uniformity of the distribution of the gas discharged from the plurality of holes 35 along the adsorption surface 30. This makes it possible to more stably remove foreign matter adhering to the adsorption surface 30.

[0080] 7, when viewed from the adsorption surface 30 side, if the plurality of holes 35, each consisting of a plurality of holes 35c and a plurality of holes 35d, are arranged at equal intervals, the uniformity of the distribution of the gas discharged from the plurality of holes 35 along the adsorption surface 30 can be further improved. This makes it possible to more stably remove foreign matter adhering to the adsorption surface 30.

[0081] In addition, in this example, the inner circumferential surface 350 of the end of the hole 35 on the adsorption surface 30 side widens outward toward the adsorption surface 30. This makes it easier to remove foreign matter adhering to the adsorption surface 30. For example, the gas discharged from the hole 35 is more likely to flow around into an intermediate region on the adsorption surface 30 between the hole 35 and the adjacent hole 35, making it easier to remove foreign matter adhering to that intermediate region. In addition, the gas discharged from the hole 35 is more likely to flow around into an intermediate region on the adsorption surface 30 between the outer edge of the adsorption surface 30 and the hole 35, making it easier to remove foreign matter adhering to that intermediate region.

[0082] In at least one hole 35 , the inner circumferential surface 350 at the end on the adsorption surface 30 side does not have to widen outward toward the adsorption surface 30 .

[0083] Embodiment 2 FIG. 9 is a schematic diagram showing an example of the configuration of a transfer device 1A according to embodiment 2. Like the transfer device 1 according to embodiment 1 described above, the transfer device 1A is capable of sucking and holding a semiconductor element 2 and transferring it to a predetermined location. The transfer device 1A can remove foreign matter adhering to the suction surface of the collet using a method different from that of the transfer device 1. FIG. 9 shows an example of the transfer device 1A when sucking and holding a semiconductor element 2.

[0084] 9, the transfer device 1A includes a collet 130, a collet holder 140, a connection part 150, an exhaust device 160, an air supply device 170, and an air passage part 180. In Fig. 9, cross sections of the collet 130, the collet holder 140, and the connection part 150 are shown by diagonal lines.

[0085] The collet 130 can suck and hold the semiconductor element 2 on the suction surface 131. When the collet 130 sucks and holds the semiconductor element 2, the suction surface 131 faces the upper surface of the semiconductor element 2, as shown in FIG. 9. The collet 130 can also release the suction of the semiconductor element 2 and release the held semiconductor element 2. The collet 130 has a hole 132 that opens toward the suction surface 131. The collet 130 may be made of resin or metal. The collet 130 may have multiple holes 132.

[0086] The collet holder 140 holds the collet 130. The collet holder 140 is connected to the exhaust device 160 by a connection part 150. The collet holder 140 may be made of resin or metal. The connection part 150 may be a hose made of resin or the like.

[0087] A common ventilation path 155 through which gas passes is provided to the connection portion 150, the collet holder 140, and the collet 130. The hole 132 of the collet 130 is connected to the ventilation path 155.

[0088] The exhaust device 160 exhausts air from the air passage 155 and the hole 132. The exhaust device 160 includes, for example, a pump. The exhaust device 160 exhausts the air from the air passage 155 and the hole 132, thereby enabling the collet 130 to adsorb the semiconductor element 2. Furthermore, the exhaust device 160 stops exhausting the air from the air passage 155 and the hole 132, thereby enabling the collet 130 to release the semiconductor element 2.

[0089] The transfer device 1A includes a movement mechanism that moves the collet 130, similar to the movement mechanism 23 described above. The collet 130 that has adsorbed the semiconductor element 2 is moved by the movement mechanism, and the semiconductor element 2 moves to a predetermined location (for example, a circuit board). Thereafter, the collet 130 releases the adsorption of the semiconductor element 2, and the semiconductor element 2 is released from the collet 130 and placed on the predetermined location (for example, a circuit board).

[0090] The air passage section 180 is connected to the air supply device 170. The air passage section 180 includes an air passage 190 through which gas passes. The air passage section 180 may be made of resin, metal, or the like. The air passage section 180 may be made of a combination of multiple members.

[0091] The air supply device 170 can supply air to the air passage 190. The air supply device 170 can supply a gas 175 into the air passage 190. The gas 175 may be air or an inert gas such as nitrogen gas or argon gas. The air supply device 170 may be constituted by, for example, a pump or a cylinder.

[0092] The air passage 190 has an exhaust port 200 that discharges the gas 175 supplied from the air supply device 170 to the outside of the air passage section 180. The air supply device 170 supplies air to the air passage 190 and can discharge the gas 175 from the exhaust port 200. It can be said that the air supply device 170 and the air passage section 180 constitute a blower that discharges the gas 175.

[0093] When the collet 130 suctions the semiconductor element 2 on the suction surface 131, the air supply device 170 starts supplying air to the air passage 190, and then the exhaust device 160 starts exhausting air from the air passage 155 and the hole 132. The operation of the transfer device 1A when the collet 130 suctions the semiconductor element 2 will be described in detail later.

[0094] The transfer device 1A includes a control unit similar to the control unit 25 described above. The control unit can control a moving mechanism that moves the collet 130, the exhaust device 160, and the air supply device 170. The moving mechanism can move the collet 130 under the control of the control unit. The exhaust device 160 can evacuate the air passage 155 and the hole 132 or stop exhausting the air passage 155 and the hole 132 under the control of the control unit. The air supply device 170 can supply air to the air passage 190 or stop supplying air to the air passage 190 under the control of the control unit.

[0095] The air vent path 180 includes, for example, a plurality of air vent path portions 182 each extending in the vertical direction, and a connecting air vent path portion 181 that connects the plurality of air vent path portions 182 to the air supply device 170. The connecting air vent path portion 181 may be made of a flexible hose. The air vent path portion 182 may be made of a hard, non-bending material.

[0096] The multiple ventilation paths 182 surround the collet 130 and the collet holder 140 in the horizontal direction perpendicular to the up-down direction. Each ventilation path 182 is located on the horizontal side (in other words, on the side) of the collet 130 and the collet holder 140. Hereinafter, each ventilation path 182 may be referred to as a side ventilation path 182.

[0097] The air passage 191 of the connection air passage portion 181 is connected to the air supply device 170. In addition, the air passage 192 (also referred to as the side air passage 192) of each side air passage portion 182 is connected to the air passage 191 of the connection air passage portion 181. The air passage 190 is composed of the air passage 191 of the connection air passage portion 181 and the side air passages 192 of the multiple side air passage portions 182.

[0098] The positional relationship between the collet 130 and the multiple side ventilation path portions 182 located on the sides of the collet 130 is always fixed. The movement mechanism can move the collet 130 and the multiple side ventilation path portions 182 together under the control of the control unit.

[0099] Fig. 10 is a schematic diagram showing an example of a state in which the plurality of side ventilation path portions 182 and the collet 130 are viewed from below. In Fig. 10, the outer edge of the semiconductor element 2 when the collet 130 adsorbs the semiconductor element 2 is indicated by a dashed line. Hereinafter, for convenience of explanation, the left side, right side, back side of the paper, and front side of the paper in Fig. 9 will be referred to as the left side, right side, rear side, and front side of the transfer device 1A, respectively.

[0100] The ventilation path 180 includes, for example, four side ventilation path portions 182. Specifically, the ventilation path 180 includes a side ventilation path portion 182 located on the left side of the collet 130, a side ventilation path portion 182 located on the right side of the collet 130, a side ventilation path portion 182 located on the rear side of the collet 130, and a side ventilation path portion 182 located on the front side of the collet 130. Note that in Figure 9, for convenience of explanation, the rear side ventilation path portion 182 and the front side ventilation path portion 182 are omitted from the illustration.

[0101] The exhaust port 200 of the ventilation path 190 has, for example, an exhaust port 210 that surrounds the adsorption surface 131 when viewed from the adsorption surface 131 side, and an exhaust port 220 that surrounds the adsorption surface 131 when viewed from the adsorption surface 131 side.

[0102] The exhaust port 210 exhausts the gas 175 in the direction in which the adsorption surface 131 faces. Since the adsorption surface 131 faces downward, it can also be said that the exhaust port 210 exhausts the gas 175 downward. Hereinafter, the exhaust port 210 will be referred to as the lower exhaust port 210.

[0103] The exhaust port 220 exhausts the gas 175 in a direction perpendicular to the direction in which the adsorption surface 131 faces (i.e., downward) and toward the adsorption surface 131. If the side perpendicular to the direction in which the adsorption surface 131 faces and toward the adsorption surface 131 side is called the inside of the device, then it can also be said that the exhaust port 220 exhausts the gas 175 toward the inside of the device. Hereinafter, the exhaust port 220 will also be called the inside exhaust port 220.

[0104] Each of the side ventilation passages 192 extending in the vertical direction has an exhaust port 212 at its lower end. The exhaust port 212 is provided at the lower end of the side ventilation passage portion 182. The lower exhaust port 210 is made up of a plurality of exhaust ports 212 (four exhaust ports 212 in this example) that each of the plurality of side ventilation passages 192 has.

[0105] Each exhaust port 212 faces downward (in other words, the side toward which the suction surface 131 faces). The outer shape of each exhaust port 212 is, for example, a rectangle that is long in one direction. The exhaust port 212 of the side ventilation path 192 located on the left side of the collet 130 and the exhaust port 212 of the side ventilation path 192 located on the right side of the collet 130 extend in the front-to-rear direction. The exhaust port 212 of the side ventilation path 192 located on the rear side of the collet 130 and the exhaust port 212 of the side ventilation path 192 located on the front side of the collet 130 extend in the left-to-right direction. For example, the shapes of the multiple exhaust ports 212 are the same, and the sizes of the multiple exhaust ports 212 are the same.

[0106] As shown in Figure 10, when viewed from the suction surface 131 side, the multiple exhaust ports 212 surround the suction surface 131. When viewed from the suction surface 131 side, the multiple exhaust ports 212 surround the suction surface 131 in, for example, a rectangular shape. When the collet 130 suctions the semiconductor element 2, the multiple exhaust ports 212 are positioned so as to respectively follow multiple sides that form the outer edge of the semiconductor element 2 when viewed from the suction surface 131 side (see Figure 10). In this example, four exhaust ports 212 are positioned so as to respectively follow four sides that form the outer edge of the square plate-shaped semiconductor element 2.

[0107] When the collet 130 suctions the semiconductor element 2 (in other words, when the suction surface 131 faces the upper surface of the semiconductor element 2), each exhaust port 212 is located, for example, directly above the outer edge of the upper surface of the semiconductor element 2. Each exhaust port 212 is located slightly above the suction surface 131. This prevents the side air vent path 182 from interfering with the semiconductor element 2 when the suction surface 131 comes into contact with the semiconductor element 2. The multiple exhaust ports 212 are located on the horizontal sides (in other words, sides) of the collet 130. Specifically, the multiple exhaust ports 212 are located on the left side, right side, rear side, and front side of the collet 130, respectively. A portion of the gas 175 supplied to the air vent path 190 by the air supply device 170 is discharged downward from the exhaust port 210 as exhaust gas 176. The exhaust gas 176 is composed of gas discharged from the multiple exhaust ports 212.

[0108] Each side ventilation path 192 has an exhaust port 222 at its lower end inside the device. The exhaust port 222 is provided at the lower end of the side surface of the ventilation path portion 182 on the collet 130 side. The inner exhaust port 220 is made up of multiple exhaust ports 222 (four exhaust ports 222 in this example) that each of the multiple ventilation paths 192 has.

[0109] Each exhaust port 222 faces the inside of the device. The outer shape of each exhaust port 222 is, for example, a rectangle that is long in one direction. The exhaust port 222 of the side air passage 192 located on the left side of the collet 130 and the exhaust port 222 of the side air passage 192 located on the right side of the collet 130 extend in the front-to-rear direction. The exhaust port 222 of the side air passage 192 located on the rear side of the collet 130 and the exhaust port 222 of the side air passage 192 located on the front side of the collet 130 extend in the left-to-right direction. For example, the shapes of the multiple exhaust ports 222 are the same as each other, and the sizes of the multiple exhaust ports 222 are the same as each other. Furthermore, for example, the shape and size of the exhaust ports 222 are the same as the shape and size of the exhaust port 212, respectively.

[0110] As shown in FIG. 10 , when viewed from the suction surface 131 side, the multiple exhaust ports 222 surround the suction surface 131. In FIG. 10 , the exhaust ports 222 are indicated by thick lines. When viewed from the suction surface 131 side, the multiple exhaust ports 222 surround the suction surface 131 in, for example, a rectangular shape. When the collet 130 suctions the semiconductor element 2, the multiple exhaust ports 222 are positioned so as to respectively follow multiple sides that form the outer edge of the semiconductor element 2 when viewed from the suction surface 131 side. In this example, four exhaust ports 222 are positioned so as to respectively follow four sides that form the outer edge of the square plate-shaped semiconductor element 2.

[0111] When the collet 130 suctions the semiconductor element 2 (in other words, when the suction surface 131 faces the upper surface of the semiconductor element 2), each exhaust port 222 is located, for example, directly above the peripheral edge of the upper surface of the semiconductor element 2. Each exhaust port 222 is located slightly above the suction surface 131. The multiple exhaust ports 222 are located on the horizontal sides (in other words, lateral sides) of the collet 130. Specifically, the multiple exhaust ports 222 are located on the left side, right side, rear side, and front side of the collet 130, respectively. A portion of the gas 175 supplied to the air passage 190 by the air supply device 170 is exhausted from the exhaust port 220 to the inside of the device as exhaust gas 177. The exhaust gas 177 is made up of gas exhausted from the multiple exhaust ports 222.

[0112] <Example of Operation of Transfer Device According to Second Embodiment> 11 is a schematic diagram showing an example of the operation of the transfer apparatus 1 A. Steps s11 to s19 in FIG.

[0113] In step s11, the movement mechanism moves the collet 130 and the side air passage portion 182 to position the suction surface 131 of the collet 130 above the semiconductor element 2. At this time, the suction surface 131 is positioned above the center of the upper surface of the semiconductor element 2.

[0114] Next, in step s12, air supply device 170 starts supplying air to air passage 190 of air passage section 180. This starts exhausting exhaust gas 176 downward from exhaust port 210, and starts exhausting exhaust gas 177 toward the inside of the device from exhaust port 220.

[0115] Next, in step s13, the movement mechanism moves the collet 130 and the side air passage portion 182 downward, and moves the suction surface 131 of the collet 130 closer to the upper surface of the semiconductor element 2 from above the semiconductor element 2.

[0116] When the suction surface 131 approaches the upper surface of the semiconductor element 2, the positional relationship between the multiple exhaust ports 212 and the semiconductor element 2 is, for example, as shown in Fig. 10. Also, when the suction surface 131 approaches the upper surface of the semiconductor element 2, the positional relationship between the multiple exhaust ports 222 and the semiconductor element 2 is, for example, as shown in Fig. 10.

[0117] As the suction surface 131 approaches the upper surface of the semiconductor element 2, the transfer device 1A, in step s14, uses gas exhausted from the exhaust ports 210 and 220 to move foreign matter on the semiconductor element 2 toward the center of the semiconductor element 2. It can also be said that the transfer device 1A is able to move foreign matter on the semiconductor element 2 toward the center of the semiconductor element 2 by exhausting gas from the exhaust port 200. This operation will be described in detail below.

[0118] As the suction surface 131 approaches the upper surface of the semiconductor element 2, exhaust gas 177 discharged from the inner exhaust port 220 to the inside of the device flows along the upper surface of the semiconductor element 2 toward the inside of the semiconductor element 2. Furthermore, as the suction surface 131 approaches the upper surface of the semiconductor element 2, exhaust gas 176 discharged downward from the lower exhaust port 210 hits the upper surfaces of the semiconductor element 2 and the mounting sheet 8. The upper surface of the mounting sheet 8 can be said to be the mounting surface on which the semiconductor element 2 is placed. A portion of the exhaust gas 176 that hits the semiconductor element 2 and the mounting sheet 8 becomes surface flow gas 176a (also referred to as element surface flow gas 176a) that flows along the upper surface of the semiconductor element 2 toward the inside of the semiconductor element 2 (see FIG. 9). In addition, a portion of the exhaust gas 176 that hits the semiconductor element 2 and the mounting sheet 8 becomes surface flow gas 176b (also referred to as sheet surface flow gas 176b) that flows along the upper surface of the mounting sheet 8 toward the outside of the mounting sheet 8 (in other words, away from the semiconductor element 2) (see Figure 9).

[0119] The transfer device 1A can move foreign matter on the upper surface of the semiconductor element 2 toward the center of the upper surface of the semiconductor element 2 by using the element surface flow gas 176a directed toward the inside of the semiconductor element 2 and the exhaust gas 177 discharged from the inner exhaust port 220 to the inside of the device.

[0120] 12 is a schematic diagram showing an example of how foreign matter 115 on the upper surface of the semiconductor element 2 is moved toward the center of the upper surface of the semiconductor element 2 by element surface flow gas 176a and exhaust gas 177. FIG. 12 shows an example of the semiconductor element 2 as viewed from above.

[0121] Furthermore, when the suction surface 131 approaches the upper surface of the semiconductor element 2, the sheet surface flow gas 176b directed toward the outside of the mounting sheet 8 makes it difficult for foreign matter to adhere to the semiconductor element 2 and the suction surface 131 from outside the side ventilation path portion 182.

[0122] When the suction surface 131 moves to a position, for example, about 1 mm away from the upper surface of the semiconductor element 2, in step s15, the movement mechanism stops the movement of the collet 130 and the side air passage portion 182. Then, in step s16, the air supply device 170 stops supplying air to the air passage 190. As a result, gas is no longer discharged from the exhaust ports 210 and 220.

[0123] Next, in step s17, exhaust device 160 begins, for example, vacuuming to begin exhausting the air from inside ventilation path 155 and hole 132. Once exhaust from ventilation path 155 and hole 132 has begun, in step s18, collet 130 having hole 132 positioned above the center of semiconductor element 2 sucks into hole 132 any foreign matter that has moved toward the center of semiconductor element 2. The foreign matter sucked into hole 132 is collected by exhaust device 160.

[0124] Next, in step s19, the movement mechanism moves collet 130 and side air passage portion 182 so that suction surface 131 adheres to the upper surface of semiconductor element 2. As a result, collet 130 adheres semiconductor element 2 to suction surface 131.

[0125] Next, in step s20, the moving mechanism moves the collet 3 and the side air passage portion 182 so that the semiconductor element 2 moves to a predetermined location. Next, in step s21, the exhaust device 160 finishes exhausting the air passage 155 and the hole 132. As a result, in step s22, the collet 130 releases the semiconductor element 2, and the semiconductor element 2 is placed in a predetermined location.

[0126] After exhausting the air passage 155 and the hole 132, the exhaust device 160 may supply gas into the air passage 155 and the hole 132. In this case, the collet 130 may more easily release the semiconductor element 2. In this way, the exhaust device 160 may function as a supply and exhaust device that can exhaust air from the air passage 155 and the hole 132 and also supply air to the air passage 155 and the hole 132.

[0127] In the above example, the exhaust of air through the air vent path 155 and the hole 132 begins after the supply of air through the air vent path 190 ends. However, the supply of air through the air vent path 190 may end after the exhaust of air through the air vent path 155 and the hole 132 begins. For example, step s16 may be performed between step s18 and step s19. That is, the exhaust of air through the air vent path 155 and the hole 132 begins, the collet 130 sucks foreign matter into the hole 132, and then the supply of air through the air vent path 190 ends. Thereafter, the suction surface 131 may come into contact with the semiconductor element 2 and the semiconductor element 2 is adsorbed by the suction surface 131. Alternatively, step s16 may be performed after step s19. That is, the supply of air through the air vent path 190 may end after the suction surface 131 comes into contact with the semiconductor element 2 and the collet 130 adsorbs the semiconductor element 2. In this case, the gas discharged from the exhaust ports 210 and 220 may make it difficult for the collet 130 to adsorb the semiconductor element 2. In contrast, in the example of Figure 11, or when step s16 is performed between steps s18 and s19, the suction surface 131 comes into contact with the semiconductor element 2 without gas being discharged from the exhaust ports 210 and 220, making it easier for the collet 130 to suction the semiconductor element 2 with the suction surface 131.

[0128] 13, the exhaust port 200 of the ventilation path portion 180 may not have the inner exhaust port 220. In this case, in step s14, the foreign matter on the upper surface of the semiconductor element 2 moves toward the center of the upper surface of the semiconductor element 2 by the element surface flow gas 176a based on the exhaust gas 176 discharged from the exhaust port 200.

[0129] 14, exhaust port 200 does not have to have lower exhaust port 210. In this case, in step s14, foreign matter on the upper surface of semiconductor element 2 moves toward the center of the upper surface of semiconductor element 2 by exhaust gas 177 discharged by exhaust port 220.

[0130] Furthermore, the shapes of the exhaust ports 210 and 220 are not limited to the above example. For example, when viewed from the suction surface 131 side, the lower exhaust port 210 may surround the suction surface 131 in a circular shape rather than a rectangular shape. The same applies to the inner exhaust port 220. Furthermore, the number of exhaust ports 212 constituting the lower exhaust port 210 may be other than four. In this case, the exhaust ports 212 may be arranged along one side of the outer edge of the semiconductor element 2. In this case, the shape of the exhaust port 212 may be square or circular. The same applies to the exhaust ports 222 constituting the inner exhaust port 220.

[0131] Furthermore, when the collet 130 suctions the semiconductor element 2, the exhaust gas 176 discharged from the lower exhaust port 210 may strike only the semiconductor element 2 out of the semiconductor element 2 and the mounting sheet 8. Even in this case, part of the exhaust gas 176 that strikes the semiconductor element 2 becomes element surface flow gas 176a that flows along the upper surface of the semiconductor element 2 toward the inside of the semiconductor element 2. Also, part of the exhaust gas 176 that strikes the semiconductor element 2 becomes sheet surface flow gas 176b that flows along the upper surface of the mounting sheet 8 toward the outside of the mounting sheet 8. For example, when viewed from the suction surface 131 side, if the lower exhaust port 210 is located somewhat inside the outer edge of the semiconductor element 2, the exhaust gas 176 strikes only the semiconductor element 2 out of the semiconductor element 2 and the mounting sheet 8.

[0132] Furthermore, the exhaust gas 176 may strike only the mounting sheet 8 out of the semiconductor element 2 and the mounting sheet 8. Even in this case, part of the exhaust gas 176 that strikes the mounting sheet 8 becomes element surface flow gas 176a that flows along the upper surface of the semiconductor element 2 toward the inside of the semiconductor element 2. Part of the exhaust gas 176 that strikes the mounting sheet 8 becomes sheet surface flow gas 176b that flows along the upper surface of the mounting sheet 8 toward the outside of the mounting sheet 8. For example, when viewed from the suction surface 131 side, if the lower exhaust port 210 is located somewhat outside the outer edge of the semiconductor element 2, the exhaust gas 176 strikes only the mounting sheet 9 out of the semiconductor element 2 and the mounting sheet 8.

[0133] The upper surface of the semiconductor element 2 is located higher than the upper surface of the mounting sheet 8, and a step exists between the mounting sheet 8 and the semiconductor element 2. For this reason, the flow of element surface flow gas 176a is stronger when the exhaust gas 176 hits only the semiconductor element 2 than when the exhaust gas 176 hits only the mounting sheet 8. On the other hand, the flow of sheet surface flow gas 176b is stronger when the exhaust gas 176 hits only the mounting sheet 8 than when the exhaust gas 176 hits only the semiconductor element 2.

[0134] Furthermore, the sheet surface flow gas 176b does not necessarily have to be generated. For example, if there is a member surrounding the outer periphery of the semiconductor element 2 and fixing the semiconductor element 2, the sheet surface flow gas 176b will not be generated.

[0135] As described above, in the transfer device 1A, the exhaust port 210 surrounding the suction surface 131 when viewed from the suction surface 131 side exhausts gas in the direction in which the suction surface 131 faces. As a result, when the collet 130 suctions the semiconductor element 2 with the suction surface 131, an element surface flow gas 176a is generated that flows along the upper surface of the semiconductor element 2 toward the inside of the semiconductor element 2. This element surface flow gas 176a can move foreign matter on the semiconductor element 2 toward the center of the semiconductor element 2. By evacuating the hole 132 before the suction surface 131 comes into contact with the semiconductor element 2, foreign matter that has moved to the center of the semiconductor element 2 can be sucked into the hole 132 and removed from the semiconductor element 2. This reduces the possibility of foreign matter being trapped between the suction surface 131 and the semiconductor element 2. As a result, scratches on the semiconductor element 2 are less likely to occur.

[0136] In this example, the exhaust port 220 surrounding the suction surface 131 when viewed from the suction surface 131 side exhausts gas inward, that is, perpendicular to the direction in which the suction surface 131 faces and toward the suction surface 131 side. In this case, when the collet 130 suctions the semiconductor element 2 with the suction surface 131, gas is exhausted from the exhaust port 220, which allows foreign matter on the semiconductor element 2 to move toward the center of the semiconductor element 2. By exhausting air from the hole 132 before the suction surface 131 comes into contact with the semiconductor element 2, foreign matter that has moved to the center of the semiconductor element 2 can be sucked into the hole 132 and removed from the semiconductor element 2. This reduces the possibility of foreign matter becoming trapped between the suction surface 131 and the semiconductor element 2. As a result, scratches on the semiconductor element 2 are less likely to occur.

[0137] In addition, in the example of Figure 11, when the collet adsorbs the semiconductor element 2 with the adsorption surface 131, the adsorption surface 131 comes into contact with the semiconductor element 2 when no gas is being discharged from the exhaust port 200, making it easier for the collet 130 to adsorb the semiconductor element 2 with the adsorption surface 131.

[0138] 10, when the collet 130 suctions the semiconductor element 2 with the suction surface 131, the multiple exhaust ports 212 provided in the lower exhaust port 210 are positioned so as to respectively follow the multiple sides that form the outer edge of the semiconductor element 2 when viewed from the suction surface 131 side. In this case, the element surface flow gas 176a can be made to flow uniformly within the upper surface of the semiconductor element 2 toward the inside of the semiconductor element 2. This makes it easier to move foreign matter on the semiconductor element 2 to the center of the semiconductor element 2. As a result, it becomes easier to suck foreign matter on the semiconductor element 2 into the hole 132.

[0139] 10, when the collet 130 suctions the semiconductor element 2 with the suction surface 131, the multiple exhaust ports 222 provided in the inner exhaust port 220 are positioned so as to respectively follow multiple sides that form the outer edge of the semiconductor element 2 when viewed from the suction surface 131 side. In this case, gas can be made to flow uniformly within the upper surface of the semiconductor element 2 from the inner exhaust port 220 toward the inside of the semiconductor element 2. This makes it easier to move foreign matter on the semiconductor element 2 to the center of the semiconductor element 2. As a result, it becomes easier to suck foreign matter on the semiconductor element 2 into the hole 132.

[0140] 9 and 10, when the exhaust port 200 of the ventilation path 190 has an exhaust port 210 on the lower side that discharges gas and an exhaust port 220 on the inner side that discharges gas, foreign matter on the semiconductor element 2 can be easily moved to the center of the semiconductor element 2. As a result, foreign matter on the semiconductor element 2 can be easily sucked into the hole 132.

[0141] The transfer device 1A may include the collet 3, collet holder 4, connection part 5, and air supply / exhaust device 20 included in the transfer device 1 according to the first embodiment, instead of the collet 130, collet holder 140, connection part 150, and exhaust device 160. In this case, foreign matter moved to the center of the semiconductor element 2 by the gas exhausted from the exhaust port 200 is sucked into at least one hole 35 of the collet 3. When the collet 3 releases the semiconductor element 2, foreign matter adhering to the suction surface 30 of the collet 3 is removed by the gas exhausted from the multiple holes 35 of the collet 3, as in the first embodiment.

[0142] Although the present disclosure has been described in detail, the above description is illustrative in all respects and is not restrictive. It is understood that countless variations not illustrated can be envisioned.

[0143] Furthermore, the embodiments can be freely combined, and the embodiments can be modified or omitted as appropriate.

[0144] <Additional Notes> Various aspects of the present disclosure are summarized below as appendices.

[0145] (Appendix 1) A transfer device for transferring a semiconductor element, a collet having an adsorption surface and a plurality of holes opening toward the adsorption surface, the collet adsorbing a semiconductor element on the adsorption surface; an air intake / exhaust device that performs air intake and exhaust for the plurality of holes; Equipped with The collet is When the plurality of holes are evacuated, the semiconductor element is attracted to the attracting surface, and A transfer device that separates the semiconductor element from the suction surface when air is supplied to the plurality of holes.

[0146] (Appendix 2) 2. The transfer device according to claim 1, The transfer device, wherein the plurality of holes include a plurality of first holes having different diameters.

[0147] (Appendix 3) 2. The transfer device according to claim 1, The plurality of holes are A first hole; at least one second hole having a diameter smaller than that of the first hole; A transfer device comprising:

[0148] (Appendix 4) 4. The transfer device according to claim 3, the plurality of holes includes a plurality of second holes having a diameter smaller than that of the first holes; A transfer device, wherein when the plurality of holes are viewed from the suction surface side, the plurality of second holes are positioned around the first hole.

[0149] (Appendix 5) 5. The transfer device according to claim 4, When the plurality of holes are viewed from the suction surface side, the plurality of second holes surround the first hole.

[0150] (Appendix 6) 6. The transfer device according to claim 5, When the plurality of holes are viewed from the adsorption surface side, the plurality of second holes are arranged at equal intervals.

[0151] (Appendix 7) 7. The transfer device according to claim 4, The plurality of second holes are at least one third hole having a diameter smaller than that of the first hole; at least one fourth hole having a diameter smaller than the first hole and the at least one third hole; A transfer device comprising:

[0152] (Appendix 8) 8. The transfer device according to claim 7, The transfer device, wherein the plurality of second holes include a plurality of third holes having a diameter smaller than that of the first holes.

[0153] (Appendix 9) 9. The transfer device according to claim 7 or 8, The transfer device, wherein the plurality of second holes include a plurality of fourth holes having diameters smaller than the first hole and the at least one third hole.

[0154] (Appendix 10) 7. The transfer device according to claim 5 or 6, The plurality of second holes are a plurality of third holes each having a diameter smaller than that of the first holes; a plurality of fourth holes having diameters smaller than the first holes and the plurality of third holes; Including, When the plurality of second holes are viewed from the suction surface side, the plurality of third holes and the plurality of fourth holes are positioned alternately one by one.

[0155] (Appendix 11) 10. The transfer device according to claim 1 or 2, The transfer device, wherein the plurality of holes include a plurality of second holes arranged point-symmetrically with respect to the center of the suction surface when viewed from the suction surface side.

[0156] (Appendix 12) 12. The transfer device according to claim 11, The transfer device, wherein the plurality of holes include a third hole located at the center of the suction surface when viewed from the suction surface side.

[0157] (Appendix 13) 13. The transfer device according to claim 12, A transfer device in which, when the plurality of holes are viewed from the suction surface side, a plurality of fourth holes consisting of the plurality of second holes and the third holes are arranged at equal intervals.

[0158] (Appendix 14) 14. The transfer device according to any one of claims 1 to 13, A transfer device, wherein an inner circumferential surface of an end portion of at least one of the plurality of holes on the suction surface side expands outward toward the suction surface.

[0159] (Appendix 15) A transfer device for transferring a semiconductor element, a collet having an adsorption surface and a hole opening toward the adsorption surface, the collet adsorbing a semiconductor element on the adsorption surface; an exhaust device for exhausting the hole; an air passage portion including an air passage having an exhaust port for discharging gas; an air supply device that supplies air to the air passage and discharges gas from the exhaust port; Equipped with the exhaust port has a first exhaust port surrounding the adsorption surface when viewed from the adsorption surface side, The first exhaust port discharges gas in a first direction toward which the suction surface faces, or in a second direction perpendicular to the first direction and toward the suction surface.

[0160] (Appendix 16) 16. The transfer device according to claim 15, When the collet adsorbs the semiconductor element with the adsorption surface, the air supply device starts to supply air to the air passage, and then the exhaust device starts to exhaust air from the hole, and after the exhaust from the hole has started, the adsorption surface comes into contact with the semiconductor element.

[0161] (Appendix 17) 17. The transfer device according to claim 16, When the collet sucks the semiconductor element with the suction surface, the suction surface comes into contact with the semiconductor element in a state where gas is not being discharged from the exhaust port.

[0162] (Appendix 18) 18. The transfer device according to any one of claims 15 to 17, the first exhaust port has a plurality of second exhaust ports; A transfer device in which, when the collet adsorbs the semiconductor element using the adsorption surface, the multiple second exhaust ports are positioned so as to respectively follow multiple sides that form the outer edge of the semiconductor element when viewed from the adsorption surface side.

[0163] (Appendix 19) 19. The transfer device according to any one of claims 15 to 18, the exhaust port has a third exhaust port surrounding the adsorption surface when viewed from the adsorption surface side, one of the first exhaust port and the third exhaust port exhausts gas toward the first direction; The other of the first exhaust port and the third exhaust port exhausts gas toward the second direction.

[0164] (Appendix 20) 19. The transfer device according to claim 18, the third exhaust port has a plurality of fourth exhaust ports; A transfer device in which, when the collet adsorbs the semiconductor element using the adsorption surface, the multiple fourth exhaust ports are positioned so as to respectively follow multiple sides that form the outer edge of the semiconductor element when viewed from the adsorption surface side.

[0165] (Appendix 21) A method for suctioning a semiconductor element using the transfer device according to any one of Supplementary Note 15 to Supplementary Note 20, a first step of discharging gas from the exhaust port to move foreign matter on the semiconductor element toward a center of the semiconductor element; a second step of evacuating the hole after the first step to suck the foreign matter into the hole; a third step of bringing the suction surface into contact with the semiconductor element while the hole is being evacuated, and suctioning the semiconductor element with the suction surface, after the second step; The adsorption method comprises:

[0166] (Appendix 22) 22. The adsorption method according to claim 21, In the third step, the suction surface is brought into contact with the semiconductor element while no gas is being discharged from the exhaust port, thereby suctioning the semiconductor element onto the suction surface. [Explanation of symbols]

[0167] 1,1A Transfer device, 2 Semiconductor element, 3,130 Collet, 10,175 Gas, 20 Intake and exhaust device, 30,131 Adsorption surface, 35,35a,35b,35b1,35b2,35ba,35bb,35c,35d,132 Hole, 160 Exhaust device, 170 Air intake device, 180 Ventilation path section, 190 Ventilation path, 200,210,212,220,222 Exhaust port.

Claims

1. A transfer device for transferring a semiconductor element, a collet having an adsorption surface and a plurality of holes opening toward the adsorption surface, the collet adsorbing a semiconductor element on the adsorption surface; an air intake and exhaust device that draws in and exhausts air from the plurality of holes; Equipped with The collet is When the plurality of holes are evacuated, the semiconductor element is attracted to the attracting surface, A transfer device that separates the semiconductor element from the suction surface when air is supplied to the plurality of holes.

2. The transfer device according to claim 1 , The transfer device, wherein the plurality of holes include a plurality of first holes having different diameters from one another.

3. The transfer device according to claim 1 , The plurality of holes are A first hole; at least one second hole having a smaller diameter than the first hole; A transfer device comprising:

4. The transfer device according to claim 3, the plurality of holes includes a plurality of second holes having a diameter smaller than the diameter of the first holes; A transfer device, wherein the plurality of second holes are positioned around the first hole when the plurality of holes are viewed from the suction surface side.

5. The transfer device according to claim 4, A transfer device, wherein the plurality of second holes surround the first hole when the plurality of holes are viewed from the suction surface side.

6. The transfer device according to claim 5, A transfer device, wherein the second holes are arranged at equal intervals when the holes are viewed from the suction surface side.

7. The transfer device according to any one of claims 4 to 6, The plurality of second holes include at least one third hole having a diameter smaller than that of the first hole; at least one fourth hole having a diameter smaller than the first hole and the at least one third hole; A transfer device comprising:

8. The transfer device according to claim 7, The transfer device, wherein the plurality of second holes include a plurality of third holes having a diameter smaller than that of the first holes.

9. The transfer device according to claim 7, The plurality of second holes include a plurality of fourth holes having diameters smaller than the first hole and the at least one third hole.

10. The transfer device according to claim 5 or 6, The plurality of second holes include a plurality of third holes having a diameter smaller than that of the first holes; a plurality of fourth holes having a diameter smaller than the first holes and the plurality of third holes; Including, A transfer device, wherein when the plurality of second holes are viewed from the suction surface side, the plurality of third holes and the plurality of fourth holes are positioned alternately one by one.

11. The transfer device according to claim 1 or 2, The transfer device, wherein the plurality of holes include a plurality of second holes arranged in point symmetry with respect to a center of the suction surface when viewed from the suction surface side.

12. The transfer device according to claim 11, The transfer device, wherein the plurality of holes includes a third hole located at the center of the suction surface when viewed from the suction surface side.

13. The transfer device according to claim 12, A transfer device, wherein a plurality of fourth holes consisting of the plurality of second holes and the third hole are arranged at equal intervals when the plurality of holes are viewed from the suction surface side.

14. The transfer device according to any one of claims 1 to 6, A transfer device, wherein an inner circumferential surface of an end portion of at least one of the plurality of holes on the suction surface side expands outward toward the suction surface.

15. A transfer device for transferring a semiconductor element, a collet having an adsorption surface and a hole opening toward the adsorption surface, the collet adsorbing a semiconductor element with the adsorption surface; an exhaust device for exhausting the hole; an air passage portion including an air passage having an exhaust port for discharging gas; an air supply device that supplies air to the air passage and exhausts gas from the exhaust port; Equipped with the exhaust port has a first exhaust port surrounding the adsorption surface when viewed from the adsorption surface side, The first exhaust port exhausts gas toward a first direction toward which the suction surface faces, or toward a second direction perpendicular to the first direction and toward the suction surface.

16. The transfer device according to claim 15, When the collet adsorbs the semiconductor element with the suction surface, the air supply device starts supplying air to the air passage, and then the exhaust device starts evacuating the hole, and after exhausting the hole has started, the suction surface comes into contact with the semiconductor element.

17. The transfer device according to claim 16, When the collet sucks the semiconductor element with the suction surface, the suction surface comes into contact with the semiconductor element in a state in which gas is not being exhausted from the exhaust port.

18. The transfer device according to any one of claims 15 to 17, the first exhaust port has a plurality of second exhaust ports; A transfer device, wherein when the collet adsorbs the semiconductor element with the suction surface, the multiple second exhaust ports are positioned so as to respectively follow multiple sides that form the outer edge of the semiconductor element when viewed from the suction surface side.

19. The transfer device according to any one of claims 15 to 17, the exhaust port has a third exhaust port surrounding the adsorption surface when viewed from the adsorption surface side, one of the first exhaust port and the third exhaust port exhausts gas toward the first direction; The other of the first exhaust port and the third exhaust port exhausts gas toward the second direction.

20. The transfer device according to claim 19, the third exhaust port has a plurality of fourth exhaust ports; A transfer device, wherein when the collet adsorbs the semiconductor element with the suction surface, the multiple fourth exhaust ports are positioned so as to respectively follow multiple sides that form the outer edge of the semiconductor element when viewed from the suction surface side.

21. A method for adsorbing a semiconductor element using a transfer apparatus according to any one of claims 15 to 17, comprising the steps of: a first step of discharging gas from the exhaust port to move foreign matter on the semiconductor element toward a center of the semiconductor element; a second step of evacuating the hole to suck the foreign matter into the hole after the first step; a third step of contacting the suction surface with the semiconductor element while evacuating the hole and suctioning the semiconductor element on the suction surface after the second step; The adsorption method comprises:

22. 22. The method of claim 21, In the third step, the suction surface is brought into contact with the semiconductor element while no gas is being exhausted from the exhaust port, thereby suctioning the semiconductor element with the suction surface.

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