Charged particle beam device and method for cleaning inspection aperture substrate

Abstract

To provide a charged particle beam device capable of maintaining drawing precision while suppressing a decrease in an operating rate.SOLUTION: A charged particle beam device according to an embodiment includes an inspection aperture substrate that allows a beam to pass through a through hole, a holder having a hollow shape that holds the inspection aperture substrate and is connected to the inspection aperture substrate, a first chamber having a first gas inlet for introducing a cleaning gas, a movable stage disposed in the first chamber on which the inspection aperture substrate is placed, a cleaning gas generator that releases the cleaning gas toward the first gas inlet when the charged particle beam is emitted toward the inspection aperture substrate, and a pipe disposed in the first chamber, one end of which is connected to the first gas inlet and the other end of which is connected to the inside of the holder, and the cleaning gas released from the cleaning gas generator is supplied via the pipe into the holder disposed in the first chamber.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a charged particle beam device and a method for cleaning an inspection aperture substrate. [Background technology]

[0002] In the charged particle beam equipment used to form exposure masks, development of a drawing device using multiple beams is underway. By using multiple beams, more beams can be irradiated than when drawing with a single electron beam, and throughput can be significantly improved.

[0003] Charged particle beam devices use an inspection aperture substrate. Through holes are formed in the inspection aperture substrate, through which the laser irradiated from the electron gun passes. In addition, a detection element is installed below the inspection aperture substrate to detect the electrons that have passed through the through holes. Depending on the detection results of the detection element, beam inspection processes such as focus adjustment and astigmatism adjustment are performed. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2018-26544 A Summary of the Invention [Problem to be solved by the invention]

[0005] When contamination occurs during the use of the inspection aperture substrate, foreign matter may adhere to the inside of the through-hole. This foreign matter deteriorates the drawing accuracy. Therefore, conventional charged particle beam devices perform a cleaning process to remove the foreign matter by irradiating the entire beam. In this case, the above-mentioned beam inspection process cannot be performed during the cleaning process. Therefore, if the cleaning process of the inspection aperture substrate takes a long time, the operating rate of the device decreases.

[0006] An object of the present invention is to provide a charged particle beam device and a cleaning method for an inspection aperture substrate that are capable of maintaining drawing accuracy while suppressing a decrease in the operating rate. [Means for solving the problem]

[0007] A charged particle beam device according to one embodiment of the present invention comprises an inspection aperture substrate that allows a beam to pass through a through hole, a holder having a hollow shape that holds the inspection aperture substrate and is connected to the inspection aperture substrate, a first chamber having a first gas inlet for introducing a cleaning gas, a movable stage disposed in the first chamber and on which the inspection aperture substrate is placed, a cleaning gas generator that releases cleaning gas toward the first gas inlet when the charged particle beam is irradiated toward the inspection aperture substrate, and a pipe disposed in the first chamber, one end of which is connected to the first gas inlet and the other end of which is connected to the inside of the holder, and the cleaning gas released from the cleaning gas generator is supplied via the pipe into the holder disposed in the first chamber.

[0008] A method for cleaning an inspection aperture substrate according to one aspect of the present invention is a method for cleaning an inspection aperture substrate that passes a charged particle beam through a through hole, the method comprising the steps of: holding the inspection aperture plate using a holder having a hollow shape communicating with the inspection aperture plate; forming a first gas inlet for introducing a cleaning gas into the first chamber; discharging the cleaning gas toward the first gas inlet when the charged particle beam is irradiated toward the inspection aperture substrate; The cleaning gas released from the cleaning gas generator is supplied to the holder arranged in the first room via a pipe arranged in the first room, one end of which is connected to the first gas inlet and the other end of which is connected to the inside of the holder. Effect of the Invention

[0009] According to the present invention, it is possible to maintain drawing precision while suppressing a decrease in the operating rate. [Brief description of the drawings]

[0010] [Figure 1] 1 is a schematic diagram of a charged particle beam device according to a first embodiment of the present invention. [Diagram 2] 4 is a cross-sectional view for explaining the structure of an inspection aperture substrate. FIG. [Figure 3A] FIG. 4 is a plan view showing an example of a state of piping when the XY stage is placed at a fixed position. [Figure 3B] 11 is a plan view showing an example of a state of a pipe when the XY stage is moving in the x direction from a fixed position. FIG. [Figure 3C] 11 is a plan view showing an example of a state of a pipe while the XY stage is moving in the y direction from a fixed position. FIG. [Figure 4] 5 is a flowchart showing an example of a procedure of a cleaning process according to the first embodiment. [Diagram 5] FIG. 5 is a schematic diagram of a charged particle beam device according to a second embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Hereinafter, an embodiment of the present invention will be described with reference to the drawings, but the present invention is not limited to the embodiment.

[0012] (First embodiment) 1 is a schematic diagram of a charged particle beam device according to a first embodiment of the present invention. In this embodiment, a configuration using an electron beam as an example of a charged particle beam will be described. However, the charged particle beam is not limited to an electron beam, and may be another charged particle beam such as an ion beam.

[0013] The charged particle beam device 1 shown in Figure 1 includes a drawing unit W that irradiates an electron beam onto a substrate 24 to be drawn to draw a desired pattern, a drawing control unit C that controls the drawing operation of the drawing unit W, and a cleaning unit 60 that cleans the drawing unit W.

[0014] The drawing unit W includes a lens barrel (second room) 3 and a drawing chamber (first room) 20. Inside the lens barrel 3, an electron gun 4, an illumination lens 6, a shaping aperture array substrate 8, a blanking aperture array substrate 10, a reduction lens 12, a limiting aperture substrate 14, an objective lens 16, and a deflector 18 are arranged.

[0015] An XY stage 22 that is movable in the x direction (horizontal direction) and y direction (vertical direction) is disposed in the pattern writing chamber 20. A substrate 24 to be patterned is placed on the XY stage 22. The substrate 24 to be patterned includes, for example, a wafer, a reduction projection type exposure apparatus such as a stepper or scanner using an excimer laser as a light source, or an exposure mask for transferring a pattern to the wafer using an extreme ultraviolet exposure apparatus (EUV).

[0016] Furthermore, on the XY stage 22, an inspection aperture substrate 40 and a current detector 50 are disposed at a position different from the position where the substrate 24 is placed. The inspection aperture substrate 40 is preferably disposed at the same height as the substrate 24.

[0017] In the drawing section W, the electron beam 30 emitted from the electron gun 4 is illuminated almost perpendicularly by the illumination lens 6 onto the entire shaping aperture array substrate 8. A plurality of through holes are formed in the shaping aperture array substrate 8 in a matrix shape at a predetermined arrangement pitch. Each through hole is formed in a rectangular or circular shape of the same dimensions. The electron beam 30 passes through each of the through holes provided in the shaping aperture array substrate 8, thereby forming multiple beams 30a to 30e as shown in FIG. 1.

[0018] Through holes are formed in the blanking aperture array substrate 10 in accordance with the positions of the through holes in the shaping aperture array substrate 8. A blanker consisting of a pair of two electrodes is disposed in each through hole. The electron beams 30a to 30e passing through each aperture are independently deflected by the voltage applied by the blanker. Blanking control of each beam is performed by this deflection.

[0019] Then, the beam that passes through the limiting aperture substrate 14 from when the beam is turned on until when it is turned off becomes the electron beam for one shot. The electron beams 30a to 30e that have passed through the limiting aperture substrate 14 are focused by the objective lens 16, and become a pattern image with a desired reduction ratio on the substrate 24. The electron beams (the entire multi-beam) that have passed through the limiting aperture substrate 14 are deflected collectively in the same direction by the deflector 18, and are irradiated onto the substrate 24.

[0020] When the XY stage 22 is moving continuously, the beam drawing position (irradiation position) is subjected to tracking control by the deflector 18 so as to follow the movement of the XY stage 22.

[0021] The drawing control unit C has a control computer 32 and a control circuit 34. The control computer 32 performs multiple stages of data conversion processing on the drawing data to generate shot data specific to the device, and outputs it to the control circuit 34. The shot data defines the dose and irradiation position coordinates of each shot. The control circuit 34 divides the dose of each shot by the current density to obtain the irradiation time t, and applies a deflection voltage to the corresponding blanker of the blanking aperture array substrate 10 so that the beam is turned on for the irradiation time t when the corresponding shot is performed.

[0022] Furthermore, the control circuit 34 calculates the amount of deflection so that each beam is deflected to the position (coordinates) indicated by the shot data, and applies a deflection voltage to the deflector 18. As a result, the multiple beams shot in that round are deflected collectively.

[0023] In the charged particle beam device 1 according to this embodiment, a beam inspection is performed for each of the many electron beams constituting the multibeam, to check whether the beam current and focus are at desired values, whether the blanker of the blanking aperture array substrate 10 can apply a desired voltage to perform on / off control, etc. This beam inspection is performed using the inspection aperture substrate 40 and the current detector 50.

[0024] FIG. 2 is a cross-sectional view for explaining the structure of the inspection aperture substrate 40. As shown in FIG. 2, the inspection aperture substrate 40 has a scattering layer 41 and an absorption layer 43. The scattering layer 41 is provided on the absorption layer 43. The inspection aperture substrate 40 has, for example, a circular planar shape. An aperture or a through-hole 42 is formed along the central axis of this planar shape.

[0025] The inspection aperture substrate 40 is composed of an aperture or a through-hole 44 formed in the central portion of the absorption layer 43 and a through-hole 42 formed in the central portion of the scattering layer 41 and continuous with the through-hole 44. When the beam size of each beam constituting the multi-beam 30 is S and the beam pitch is P, the diameter φ1 of the through-hole 42 satisfies S < φ1 < P - S, so that the electron beams can pass through the through-hole 42 one by one.

[0026] In the inspection aperture substrate 40, when one electron beam passes through the through-hole 42, the electron beam adjacent to one of the electron beams is irradiated on the scattering layer 41, and a part of it is reflected on the surface of the scattering layer 41, but most of it penetrates into the scattering layer 41 and is scattered. The scattered electrons penetrate the scattering layer 41, a part of them travels straight in the vacuum as it is, a part of them is reflected on the surface of the absorption layer 43 and a part of them is incident on the absorption layer 43, and hardly reaches the current detector 50. The electron beams two or more adjacent to the electron beam B1 are scattered by the scattering layer 41. The scattered electrons penetrate into the absorption layer 43 and are absorbed.

[0027] The electron beam that has passed through the through-hole 42 and the through-hole 44 is incident on the current detector 50, and the beam current is detected. The current detector 50 transfers the detected beam current value to the control computer 32. For the current detector 50, for example, an SSD (semiconductor detector: solid-state detector) can be used. In the present embodiment, the current detector 50 is disposed in a holder 70 that holds the inspection aperture substrate 40. The holder 70 has a hollow shape in which an internal space communicating with the through-hole 42 and the through-hole 44 is formed.

[0028] In this embodiment, the beams to be measured are sequentially turned on to scan the through-holes 42 provided in the inspection aperture substrate 40. The blanking aperture array substrate 10 may be divided into a plurality of preset measurement regions, and each measurement region may be scanned.

[0029] For example, the control circuit 34 sequentially turns on the electron beam to be measured and deflects it in the x-direction by the deflector 18 to scan the inspection aperture substrate 40. The beam current of the electron beam that has scanned the inspection aperture substrate 40 is detected by the current detector 50.

[0030] The control computer 32 converts the beam current detected by the current detector 50 into brightness, and creates a beam image based on the amount of deflection of the deflector 18. The beam image is a SEM (Scanning Electron Microscope) image.

[0031] In the charged particle beam device 1 according to the present embodiment, contamination may occur, causing foreign matter to adhere to the inner surface of the through-hole 42. If the through-hole 42 is blocked by the foreign matter, the above-mentioned beam inspection cannot be performed. In this case, there is a concern that the drawing accuracy may decrease.

[0032] 1, the charged particle beam device 1 according to this embodiment is provided with a cleaning unit 60 that supplies a cleaning gas 100 for removing the foreign matter to the drawing chamber 20. The cleaning unit 60 includes a cleaning gas generator 61, a first pressure control valve 62, a first switching valve 63, a first pressure gauge 64, a pipe 65, and a first vacuum pump 66.

[0033] The cleaning gas generator 61 generates the cleaning gas 100. For example, ozone (O3) gas or hydrogen (H2) gas is used as the cleaning gas 100. Downstream of the cleaning gas generator 61, a first pressure adjustment valve 62 is disposed.

[0034] The first pressure adjustment valve 62 adjusts the pressure of the cleaning gas 100 released from the cleaning gas generator 61 under the control of the cleaning control unit 67. The first pressure adjustment valve 62 adjusts the pressure of the cleaning gas 100 to be higher than the internal pressure of the drawing chamber 20. The first pressure adjustment valve 62 is formed of, for example, a piezo valve. This piezo valve is provided with a piezoelectric element that can adjust the pressure of the cleaning gas 100 under the current control of the cleaning control unit 67. A first switching valve 63 is disposed downstream of the first pressure adjustment valve 62.

[0035] The first switching valve 63 switches whether or not the cleaning gas 100 is supplied to the drawing chamber 20 under the control of the cleaning control unit 67. The first switching valve 63 is formed of, for example, a motor-operated valve. This motor-operated valve opens and closes in response to a control signal from the cleaning control unit 67. A first pressure gauge 64 is disposed downstream of the first switching valve 63.

[0036] The first pressure gauge 64 measures the pressure of the cleaning gas 100 when it flows from the first gas inlet 20a into the piping 65. In addition, the first pressure gauge 64 outputs the measured pressure value to the cleaning control unit 67. The first pressure gauge 64 is formed of, for example, a vacuum gauge.

[0037] One end of the pipe 65 communicates with the first gas inlet 20a of the drawing chamber 20. The other end of the pipe 65 communicates with the internal space of the holder 70, as shown in FIG. 2. The cleaning gas 100 supplied into the drawing chamber 20 is introduced into the holder 70 through the pipe 65, as shown in FIG. 2. The introduced cleaning gas 100 passes through the through hole 44 and is discharged from the through hole 42. As a result, foreign matter attached to the inner surface of the through hole 42 is removed by the cleaning gas 100.

[0038] The removed foreign matter and the cleaning gas remaining after the foreign matter removal are exhausted from the pattern writing chamber 20 by the first vacuum pump 66 .

[0039] In the charged particle beam device 1 according to this embodiment, the holder 70 is mounted on the XY stage 22. The XY stage 22 moves in the x and y directions within the drawing chamber 20. Therefore, the piping 65 needs to keep connected to the holder 70 by following the movement of the XY stage 22. Therefore, the piping 65 is made of a flexible material, such as a fluorine-based material or a flexible tube made of metal.

[0040] Fig. 3A is a plan view showing an example of the state of pipes 65 when XY stage 22 is placed at a fixed position. Fig. 3B is a plan view showing an example of the state of pipes 65 while XY stage 22 is moving in the x direction from the fixed position. Fig. 3C is a plan view showing an example of the state of pipes 65 while XY stage 22 is moving in the y direction from the fixed position.

[0041] As shown in Fig. 3A, when the XY stage 22 is placed at a fixed position, the pipe 65 is placed in a bent state, in other words, in a state having a radius of curvature, between the first gas inlet 20a and the holder 70. When the XY stage 22 moves from the fixed position in the +x direction, the pipe 65 deforms so that the radius of curvature increases, as shown in Fig. 3B. When the XY stage 22 moves from the fixed position in the +y direction, the pipe 65 deforms so that the radius of curvature decreases, as shown in Fig. 3C.

[0042] Next, a procedure of the cleaning process performed in the charged particle beam device 1 according to this embodiment will be described. This cleaning process is performed in parallel with a beam inspection process in which the inspection aperture substrate 40 is irradiated with the multibeams 30.

[0043] 4 is a flowchart showing an example of a procedure of the cleaning process according to the first embodiment. When the beam inspection process is started, first, the cleaning gas generator 61 releases the cleaning gas 100 under the control of the cleaning control unit 67 (step S11).

[0044] Next, the first pressure regulating valve 62 adjusts the pressure of the cleaning gas 100 introduced from the first gas inlet 20a based on the control of the cleaning control unit 67 (step S12). The pressure of this cleaning gas 100 is set in advance by the cleaning control unit 67. Therefore, in step S12, the first pressure regulating valve 62 adjusts the pressure of the cleaning gas 100 to the first set value set by the cleaning control unit 67.

[0045] Next, the cleaning control unit 67 opens the first switching valve 63 (step S13). As a result, the cleaning gas 100 is introduced from the first gas inlet 20a of the patterning chamber 20 through the piping 65 into the holder 70. The pressure of the cleaning gas 100 is higher than the internal pressure of the patterning chamber 20. Therefore, the cleaning gas 100 introduced into the holder 70 passes through the through hole 44 and is discharged from the through hole 44. At this time, the inspection process is performed in parallel with the cleaning process. Therefore, as shown in FIG. 2, the multi-beam 30 is irradiated toward the through hole 44.

[0046] Next, the first pressure gauge 64 measures the pressure of the cleaning gas 100, and outputs the measurement value to the cleaning control unit 67 (step S14).

[0047] Next, the cleaning control unit 67 calculates the error between the measurement value of the first pressure gauge 64 and a preset first set value (step S15). In step S15, the cleaning control unit 67 calculates the difference between the measurement value and the first set value as the error.

[0048] Next, the cleaning control unit 67 judges whether or not the error exceeds a threshold value (step S16). This threshold value is set in advance.

[0049] If the error exceeds the threshold value, the cleaning control unit 67 causes the first pressure regulating valve 62 to readjust the pressure of the cleaning gas 100 (step S17). In step S17, for example, the cleaning control unit 67 changes the pressure of the cleaning control unit 67 by changing the current supplied to the piezoelectric element of the first pressure regulating valve 62 to deform the piezoelectric element. Thereafter, the operations of steps S14 to S17 are repeated until the error becomes equal to or less than the threshold value.

[0050] If the error is equal to or smaller than the threshold value, the cleaning gas 100 continues to be supplied into the holder 70. At this time, the cleaning control unit 67 judges whether or not a predetermined time has elapsed since the cleaning gas generator 61 started to release the cleaning gas 100 (step S18). Until the predetermined time has elapsed, the operations of steps S11 to S17 described above are repeated. On the other hand, when the predetermined time has elapsed, the cleaning control unit 67 stops the cleaning gas generator 61 and the first pressure regulating valve 62 and closes the first switching valve 63. This ends the cleaning process.

[0051] According to the present embodiment described above, the holder 70 that holds the inspection aperture substrate 40 is provided with an internal space that communicates with the through hole 44. The cleaning gas 100 is introduced into this internal space from the cleaning unit 60. The introduction pressure of the cleaning gas 100 is set higher than the internal pressure of the pattern writing chamber 20. Therefore, the cleaning gas 100 passes through the through hole 44 from the holder 70 and is led to the pattern writing chamber 20. As a result, foreign matter adhering to the inner surface of the through hole 44 is removed, so that pattern writing accuracy can be maintained.

[0052] Furthermore, the cleaning process of the through-hole 44 is performed simultaneously with the beam inspection process in which the multibeam 30 is irradiated toward the through-hole 44. Therefore, a decrease in the availability of the charged particle beam device 1 can be suppressed.

[0053] Second embodiment Fig. 5 is a schematic diagram of a charged particle beam apparatus according to the second embodiment. In Fig. 5, the same components as those in the charged particle beam apparatus 1 according to the first embodiment described above are given the same reference numerals, and detailed description thereof will be omitted.

[0054] In this embodiment, the cleaning unit 60 has a configuration capable of introducing the cleaning gas 100 not only into the drawing chamber 20 but also into the lens barrel 3. Specifically, the cleaning unit 60 according to this embodiment further includes a second pressure control valve 72, a second switching valve 73, a second pressure gauge 74, and a second vacuum pump 76, in addition to the cleaning gas generator 61 to the first vacuum pump 66 described in the first embodiment.

[0055] The second pressure regulation valve 72 adjusts the pressure of the cleaning gas 100 released from the cleaning gas generator 61 based on the control of the cleaning control unit 67. The second pressure regulation valve 72 adjusts the pressure of the cleaning gas 100 so that it is higher than the pressure inside the microscope column 3. Like the first pressure regulation valve 62, the second pressure regulation valve 72 is also composed of, for example, a piezoelectric valve. A second switching valve 73 is disposed downstream of the second pressure regulation valve 72 and the second gas inlet 3a.

[0056] The second switching valve 73 switches whether or not the cleaning gas 100 is supplied to the lens barrel 3 based on the control of the cleaning control unit 67. The second switching valve 73 is configured, for example, as an electric valve, similar to the first switching valve 63. A second pressure gauge 74 is disposed downstream of the second switching valve 73.

[0057] The second pressure gauge 74 measures the pressure of the cleaning gas 100 when it flows from the second gas inlet 3a into the lens barrel 3. In addition, the second pressure gauge 74 outputs the measured pressure value to the cleaning control unit 67. Like the first pressure gauge 64, the second pressure gauge 74 is formed of, for example, a vacuum gauge.

[0058] In the charged particle beam device 2 according to this embodiment, the second gas inlet 3a is formed between the blanking aperture array substrate 10 and the limiting aperture substrate 14. However, the position where the second gas inlet 3a is formed is not limited to this position, and may be, for example, between the shaping aperture array substrate 8 and the blanking aperture array substrate 10.

[0059] The cleaning gas introduced into the lens barrel 3 from the second gas inlet 3a passes through the shaping aperture array substrate 8, the blanking aperture array substrate 10, and the through holes formed in the blanking aperture array substrate 10. As a result, foreign matter adhering to the inner surface of each through hole is removed by the cleaning gas 100.

[0060] The removed foreign matter and the cleaning gas remaining after foreign matter removal are exhausted from the electron beam column 3 by the second vacuum pump 76 .

[0061] Next, a procedure of the cleaning process performed in the charged particle beam system 2 according to this embodiment will be described. In this embodiment, too, this cleaning process is performed in parallel with the beam inspection process according to the flowchart shown in FIG.

[0062] First, in step S11 of this embodiment, the cleaning gas generator 61 releases the cleaning gas 100 based on the control of the cleaning control unit 67. The released cleaning gas 100 flows into the first pressure regulating valve 62 and the second pressure regulating valve 72.

[0063] Next, in step S12 of this embodiment, the first pressure regulating valve 62 regulates the pressure of the cleaning gas 100 introduced from the first gas inlet 20a, and the second pressure regulating valve 72 regulates the pressure of the cleaning gas 100 introduced from the second gas inlet 3a, under the control of the cleaning control unit 67. The pressure of the cleaning gas 100 introduced from the second gas inlet 3a is also set in advance by the cleaning control unit 67. Therefore, in step S12, the second pressure regulating valve 72 regulates the pressure of the cleaning gas 100 to the first set value set by the cleaning control unit 67.

[0064] Next, in step S13 of this embodiment, the cleaning control unit 67 also opens both the first switching valve 63 and the second switching valve 73. As a result, the cleaning gas 100 that has passed through the first switching valve 63 is introduced into the holder 70, and the cleaning gas 100 that has passed through the second switching valve 73 is introduced into the lens barrel 3. At this time, the pressure of the cleaning gas 100 introduced into the holder 70 is lower than the pressure of the cleaning gas 100 introduced into the lens barrel 3.

[0065] Next, in step S14 of this embodiment, the first pressure gauge 64 measures the pressure of the cleaning gas 100 introduced into the holder 70, and the second pressure gauge 74 measures the pressure of the cleaning gas 100 introduced into the lens barrel 3. The calculated values ​​of the first pressure gauge 64 and the second pressure gauge 74 are output to the cleaning control unit 67.

[0066] In step S15 of this embodiment, the cleaning control unit 67 calculates a first error between the measurement value of the first pressure gauge 64 and the first set value, and calculates a second error between the measurement value of the second pressure gauge 74 and the second set value. The second set value is set in advance and is a value different from the first set value.

[0067] In step S16 of this embodiment, the cleaning control unit 67 determines whether the first error exceeds a first threshold value and whether the second error exceeds a second threshold value. The first threshold value and the second threshold value are preset and are different from each other.

[0068] When the first error exceeds the first threshold value, in step S17 of this embodiment, the cleaning control unit 67 causes the first pressure regulating valve 62 to readjust the pressure of the cleaning gas 100. When the second error exceeds the second threshold value, the cleaning control unit 67 causes the second pressure regulating valve 72 to readjust the pressure of the cleaning gas 100.

[0069] In step S16 of this embodiment, if the first error is equal to or smaller than the first threshold value, cleaning gas 100 continues to be supplied into holder 70. If the second error is equal to or smaller than the second threshold value, cleaning gas 100 continues to be supplied into lens barrel 3.

[0070] Thereafter, when a predetermined time has elapsed since the cleaning gas generator 61 started to release the cleaning gas 100, the cleaning control unit 67 stops the cleaning gas generator 61, the first pressure regulating valve 62, and the second pressure regulating valve 72, and closes the first switching valve 63 and the second switching valve 73. This ends the cleaning process.

[0071] According to the present embodiment described above, the cleaning gas 100 is also supplied to the lens barrel 3. Therefore, it is possible to remove the shaping aperture array substrate 8, the blanking aperture array substrate 10, and foreign matter adhering to the blanking aperture array substrate 10, which are provided in the lens barrel 3. At this time, the pressure of the cleaning gas 100 introduced into the lens barrel 3 is set by the first pressure adjustment valve 62 and the second pressure adjustment valve 72 independently from the pressure of the cleaning gas 100 introduced into the holder 70.

[0072] Furthermore, the cleaning control unit 67 performs a feedback operation based on the measurement results of the first pressure gauge 64 and the second pressure gauge 74 so that the pressure of the cleaning gas 100 introduced into the lens barrel 3 and the pressure of the cleaning gas 100 introduced into the holder 70 are optimized. This makes it possible to more reliably maintain drawing precision.

[0073] Furthermore, the cleaning process of this embodiment is also performed simultaneously with the beam inspection process, as in the first embodiment, so that a decrease in the availability of the charged particle beam device 2 can be suppressed.

[0074] The present invention is not limited to the above-described embodiment. Although the charged particle beam device of one embodiment of the present invention uses multiple beams, the present invention is not limited to this and can also use a single beam. In the implementation stage, the components can be modified and embodied without departing from the gist of the invention. In addition, various inventions can be formed by appropriately combining the multiple components disclosed in the above-described embodiment. For example, some components may be deleted from all the components shown in the embodiment. Furthermore, components from different embodiments may be appropriately combined. [Explanation of symbols]

[0075] 1, 2: Charged particle beam device 3: Telescope tube 3a: Second gas inlet 8: Shaped aperture array substrate 10: Blanking aperture array board 14: Limiting aperture board 20:Drawing room 20a: First gas inlet 22: XY Stage 40: Inspection aperture board 61: Cleaning gas generator 62: First pressure control valve 64: First pressure gauge 65: Piping 67: Cleaning control unit 70: Holder 72: Second pressure control valve 74: Second pressure gauge

Claims

1. an inspection aperture substrate for passing the charged particle beam through a through hole; a holder having a hollow shape that holds the inspection aperture substrate and communicates with the inspection aperture substrate; a first chamber having a first gas inlet for introducing a cleaning gas; a movable stage disposed in the first chamber and on which the inspection aperture substrate is placed; a cleaning gas generator that discharges the cleaning gas toward the first gas inlet when the charged particle beam is irradiated toward the inspection aperture substrate; a pipe disposed in the first chamber, the pipe having one end communicating with the first gas inlet and the other end communicating with the inside of the holder; 4. A charged particle beam device comprising: a cleaning gas generator configured to supply cleaning gas to the holder disposed in the first chamber through the piping;

2. 2. The charged particle beam device according to claim 1, wherein the inspection aperture substrate and the holder are disposed on the stage.

3. a first pressure regulating valve disposed between the cleaning gas generator and the first gas inlet, regulating the pressure of the cleaning gas to a preset first set value; a first pressure gauge that measures a pressure of the cleaning gas when the cleaning gas is introduced into the first chamber through the first gas inlet; The charged particle beam device according to claim 1 , further comprising a cleaning control unit that controls the first pressure adjustment valve based on a measurement value of the first pressure gauge.

4. The charged particle beam device according to claim 3 , wherein the first set value is a value higher than an internal pressure of the first chamber.

5. a second chamber provided above the first chamber and having a second gas inlet for introducing the cleaning gas; a plurality of aperture substrates disposed within the second chamber; a second pressure regulating valve disposed between the cleaning gas generator and the second gas inlet, regulating the pressure of the cleaning gas to a preset second set value; a second pressure gauge that measures a pressure of the cleaning gas when the cleaning gas is introduced into the second chamber from the second gas inlet, The charged particle beam device according to claim 3 , wherein the cleaning control unit controls the second pressure adjustment valve based on a measurement value of the second pressure gauge.

6. The charged particle beam device according to claim 5 , wherein the second set value is a value higher than an internal pressure of the second chamber.

7. 1. A method for cleaning an inspection aperture substrate that passes a charged particle beam through a through hole, comprising: holding the inspection aperture plate using a holder having a hollow shape communicating with the inspection aperture plate; forming a first gas inlet for introducing a cleaning gas into the first chamber; discharging the cleaning gas toward the first gas inlet when the charged particle beam is irradiated toward the inspection aperture substrate; A method for cleaning an inspection aperture substrate, comprising the steps of: supplying cleaning gas released from a cleaning gas generator to the holder disposed in the first chamber via a pipe disposed in the first chamber, the pipe having one end connected to the first gas inlet and the other end connected to the inside of the holder.

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