Liquid crystal display device

Abstract

To provide a novel input device with excellent convenience or reliability, a novel input-output device with excellent convenience or reliability, and a semiconductor device.SOLUTION: A structure includes a plurality of conductive films having a function of capacitively coupling with an approaching substance, a driving circuit that selects one conductive film among the plurality of conductive films in accordance with a predetermined order, and a detection circuit having a function of supplying a search signal and a function of supplying a detection signal.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One embodiment of the present invention is an input device, an input / output device, a touch sensor, a display device with an input function, a display The present invention relates to an input device, a display device, or a semiconductor device with a function.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one aspect relates to an article, a method, or a manufacturing method. One aspect of the present invention is a process, machine, manufacture, or composition. Therefore, the present invention more specifically disclosed herein The technical field of one embodiment of the present invention is a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, The driving method thereof or the manufacturing method thereof can be given as an example. [Background technology]

[0003] Touch signal lines, such as drive and sense lines, and ground regions in the display pixel stackup and other circuit elements are grouped together to form a touch sensor that senses touch on or near the display. A touch sensing circuit is known (Patent Document 1 and Patent Document 2).

[0004] The common electrode for display, which is originally provided in the liquid crystal display element, is replaced by a pair of electrodes for the touch sensor. One of the electrodes (drive electrode) is used as the other electrode (detection electrode for the sensor) and is newly formed. The configuration is known (Patent Document 3). [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2011-197685 A [Patent Document 2] US Patent Application Publication No. 2012 / 0218199 [Patent Document 3] JP 2009-244958 A Summary of the Invention [Problem to be solved by the invention]

[0006] An object of one embodiment of the present invention is to provide a novel input device that is highly convenient or reliable. Alternatively, the object of the present invention is to provide a novel input / output device that is highly convenient and reliable. Alternatively, the present invention aims to provide a novel information processing device that is highly convenient and reliable. The present invention provides a novel input device with a display function that is highly convenient and reliable. Another object of the present invention is to provide a novel input device with high sensitivity. Another object of the present invention is to provide an input device or the like with high reliability. Another object of the present invention is to provide an input device or the like that has few contact failures. One of the objectives is to provide a small-scale input device. One of the objectives is to provide an input device that can output a signal. new input / output device, new display device, new display device with input function, new input device with display function It is an object of the present invention to provide a novel semiconductor device, a novel data processing device, or a novel semiconductor device.

[0007] The description of these problems does not preclude the existence of other problems. It is not necessary for the embodiment to solve all of these problems. The above will become apparent from the description in the specification, drawings, claims, etc. It is possible to extract other issues from the descriptions in the patent, claims, etc. [Means for solving the problem]

[0008] (1) One aspect of the present invention is a semiconductor device comprising a first conductive film, a second conductive film, a first signal line, and a second signal line. and a signal line.

[0009] The second conductive film has a region that does not overlap with the first conductive film.

[0010] The first signal line is electrically connected to the first conductive film, and the second signal line is electrically connected to the second conductive film. are electrically connected.

[0011] The first conductive film has a function of capacitively coupling with the adjacent one, and the second conductive film has a function of capacitively coupling with the adjacent one. It has the function of capacitive coupling with.

[0012] (2) Another embodiment of the present invention is the input device having a driver circuit and a detector circuit. do.

[0013] The detection circuit is then electrically connected to the drive circuit.

[0014] The driver circuit has a function of selecting the first signal line or the second signal line.

[0015] The drive circuit electrically connects the first signal line to the detection circuit during a period in which the first signal line is selected. The driver circuit also has a function of connecting the second signal line to the second signal line during the period in which the second signal line is selected. It has the function of electrically connecting the signal line and the detection circuit.

[0016] The detection circuitry functions to provide a probe signal.

[0017] The first signal line has a function of receiving a search signal.

[0018] The first signal line changes based on the capacitance coupled to the first conductive film and the search signal. It has the function of supplying electric potential or current.

[0019] The sensing circuitry is operable to provide a sense signal based on potential or current.

[0020] The input device according to one aspect of the present invention includes a plurality of conductive elements each having a function of capacitively coupling with an object in close proximity. a driving circuit for selecting one of the plurality of conductive films in a predetermined order; and a search signal supply circuit for supplying the selected conductive film to the driving circuit. and a detection circuit having a function of detecting the temperature of the object and a function of supplying a detection signal. By this, the proximity of the conductive film is determined based on the magnitude of the probe signal and the capacitance coupled to the conductive film. As a result, it is possible to detect the change in potential depending on the temperature. It is possible to provide a novel input device.

[0021] (3) Another embodiment of the present invention is an input / output device including a display device and the above-described input device. be.

[0022] The input device has a function of detecting an object approaching the display surface side of the display device. .

[0023] The display device includes a first pixel having a region overlapping with the first conductive film.

[0024] The display device includes a second pixel having a region overlapping with the second conductive film.

[0025] The first pixel comprises a first display element, and the second pixel comprises a second display element.

[0026] The input / output device according to one embodiment of the present invention is a device that is adjacent to a display screen side of the display device. A plurality of conductive films each having a function of capacitive coupling, and a conductive film selected from the plurality of conductive films in a predetermined order. A detection circuit having a function of supplying a search signal and a function of supplying a detection signal. This allows the display device to detect objects that are close to the display screen side of the display device. The detection is performed using a potential that changes based on the magnitude of the capacitance coupled to the conductive membrane and the signal from the probe. As a result, it is possible to provide a novel input / output device that is highly convenient and reliable. can.

[0027] (4) Another embodiment of the present invention is the above input / output device including wiring.

[0028] The wiring has a function of supplying a predetermined potential, and the driver circuit selects the first signal line. The driver circuit has a function of electrically connecting the second signal line and the wiring during the period in which the second signal line is turned on. The second signal line is electrically connected to the first signal line during the period when the second signal line is selected. do.

[0029] The first display element includes a layer including a liquid crystal material, and an electric field that controls the alignment of the liquid crystal material is applied to a first conductive layer. and a first pixel electrode disposed so as to be formed between the film.

[0030] The second display element includes a layer including a liquid crystal material and an electric field that controls the alignment of the liquid crystal material is applied to a second conductive layer. and a second pixel electrode disposed so as to be formed between the film.

[0031] The input / output device according to one embodiment of the present invention includes a display device including a liquid crystal element and a liquid crystal display device that controls the alignment of a liquid crystal material. A plurality of sensors each having a function of controlling the display device and a function of capacitively coupling with a sensor adjacent to the display surface side of the display device. a conductive film and a detection circuit having a function of supplying a search signal and a function of supplying a detection signal; A conductive film is selected from the plurality of conductive films in a predetermined order and electrically connected to a detection circuit or wiring. and a driving circuit having a function of writing pixels in a predetermined order. In addition, the display surface side of the display device having the liquid crystal element is adjacent to the Detection is performed using a potential that changes based on the magnitude of the probe signal and the capacitance that is coupled to the conductive membrane. As a result, a novel input / output device with excellent convenience and reliability can be provided. can be done.

[0032] (5) Another embodiment of the present invention is the input device including a driver circuit and a detector circuit. do.

[0033] The detection circuit is electrically connected to the drive circuit.

[0034] The second conductive film forms an electric field between itself and the first conductive film that is shielded by its neighbors. The electrodes are arranged as follows.

[0035] The driver circuit has a function of selecting the first signal line and the second signal line.

[0036] The driving circuit drives the first signal line and the second signal line while the first signal line and the second signal line are selected. The second signal line and the detection circuit have a function of electrically connecting the first signal line and the detection circuit.

[0037] The detection circuitry functions to provide a probe signal.

[0038] The first signal line has a function of receiving a search signal.

[0039] The second signal line is connected to the electric field formed between the first conductive film and the second conductive film and the search signal. It has the function of supplying a potential that changes based on the signal.

[0040] The sensing circuit is operable to provide a sense signal based on the potential.

[0041] In the input device according to one embodiment of the present invention, an electric field is generated between the first conductive film and the second conductive film. and selecting the first conductive film and the second conductive film in a predetermined order. A driving circuit and a function of supplying a search signal to one conductive film and detecting a change in the potential of another conductive film. and a detection circuit having a function of supplying a detection signal. The proximity of the membrane is determined based on the magnitude of the electric field blocked between the conductive membranes and the search signal. As a result, it is possible to detect the change in potential between the electrodes, which is convenient and reliable. A novel input device can be provided.

[0042] (6) Another embodiment of the present invention is an input / output device including a display device and the above-described input device. be.

[0043] The input device has a function of detecting an object approaching the display surface side of the display device. .

[0044] The display device includes a first pixel having a region overlapping with the first conductive film.

[0045] The display device includes a second pixel having a region overlapping with the second conductive film.

[0046] The first pixel comprises a first display element, and the second pixel comprises a second display element.

[0047] The input / output device according to one embodiment of the present invention is a device that is adjacent to a display screen side of the display device. An electric field is formed between the first conductive film and the second conductive film having a capacitive coupling function. Another conductive film is provided, and a drive circuit selects the one conductive film and the other conductive film in a predetermined order. and a function of supplying a search signal to one conductive film and a function of generating a detection signal based on a change in the potential of the other conductive film. and a detection circuit having a function of supplying a display signal to the display device. The magnitude of the electric field blocked between the conductive films and the search signal are measured. This allows for convenient and reliable detection using a voltage that changes based on the signal. It is possible to provide a novel input / output device with excellent performance.

[0048] (7) Another embodiment of the present invention is the above input / output device including wiring.

[0049] The wiring has a function of supplying a predetermined potential.

[0050] The driving circuit selects the first signal line and the second signal line while wiring the other signal lines. The driver circuit also has a function of electrically connecting the The first signal line and the second signal line have a function of electrically connecting the wiring.

[0051] The first display element includes a layer including a liquid crystal material, and an electric field that controls the alignment of the liquid crystal material is applied to a first conductive layer. and a first pixel electrode disposed so as to be formed between the film.

[0052] The second display element includes a layer including a liquid crystal material and an electric field that controls the alignment of the liquid crystal material is applied to a second conductive layer. and a second pixel electrode disposed so as to be formed between the film.

[0053] The input / output device according to one embodiment of the present invention includes a display device including a liquid crystal element and a liquid crystal display device that controls the alignment of a liquid crystal material. A display device that has the function of controlling the display and the function of capacitively coupling with the display device in close proximity to the display device. Another conductive film is disposed so that an electric field is formed between the conductive film and the first conductive film, and the first conductive film is disposed so that an electric field is generated between the conductive film and the first conductive film. The function of supplying a search signal to the conductive film of the other electrode and the function of supplying a detection signal based on a change in the potential of the other conductive film are provided. a detection circuit having a function of selecting one conductive film and another conductive film in a predetermined order and detecting the and a driver circuit having a function of electrically connecting to the sensing circuit or wiring. This allows the pixels to be rewritten in a predetermined order. The device is then selected based on the magnitude of the capacitance coupled to the conductive film and the search signal. As a result, it is possible to detect the change in potential between the electrodes, which is convenient and reliable. A novel input / output device can be provided.

[0054] (8) Another embodiment of the present invention is a data processing device including an arithmetic device and the above-described input / output device. It is located.

[0055] The computing device is provided with a function of receiving the position information and supplying image information and control information. The computing device also has a function of determining the moving speed of the pointer based on the position information. The computing device also adjusts the contrast or brightness of the image information based on the moving speed of the pointer. It has the ability to make decisions based on the

[0056] This reduces the strain on the user's eyes when moving the display position of image information. This allows for a display that is easy on the user's eyes, resulting in convenience and reliability. It is therefore possible to provide a novel information processing device having excellent performance.

[0057] (9) In one embodiment of the present invention, the input unit is a keyboard, a hardware button, a pointer, touch sensor, illuminance sensor, imaging device, voice input device, viewpoint input device, The information processing device includes one or more of the above.

[0058] This allows the position information of the object close to the conductive film to be transmitted to the search signal and to the capacitance coupled to the conductive film. This allows the device to be powered with a potential that varies based on the magnitude of the It is possible to provide a novel information processing device with excellent reliability.

[0059] In the drawings accompanying this specification, components are classified by function and are shown as independent blocks. However, it is difficult to completely separate the components by function in the actual system. It is possible that one component may be involved in multiple functions.

[0060] In this specification, the source and drain of a transistor are used to indicate the polarity and The name changes depending on the potential applied to the terminal. Generally, n-channel In a transistor with a low potential, the terminal to which the low potential is applied is called the source, and the terminal to which the high potential is applied is called the The terminal to which the transistor is connected is called the drain. The terminal to which the high potential is applied is called the drain, and the terminal to which the high potential is applied is called the source. For convenience, let us assume that the source and drain are fixed. In some cases, the connection relationship between the source and drain is explained, but in reality, the connection between the source and drain is determined according to the above potential relationship. The way they are handled changes.

[0061] In this specification, the source of a transistor is a part of a semiconductor film that functions as an active layer. The term "transistor" refers to a source region connected to the semiconductor film, or a source electrode connected to the semiconductor film. The drain of the transistor is a drain region that is a part of the semiconductor film, or a region that is a part of the semiconductor film. "gate" means a gate electrode.

[0062] In this specification, the state in which transistors are connected in series refers to, for example, a first transistor Only one of the source or drain of one transistor is connected to the source or drain of the second transistor. It also means that the transistors are connected in parallel. The state where either the source or drain of the first transistor is connected to the second transistor and the source or drain of the first transistor is connected to one of the source and drain of the second transistor. This means that the other of the two transistors is connected to the other of the source or drain of the second transistor. do.

[0063] In this specification, the term "connection" refers to an electrical connection, and a current, voltage, or potential is supplied. Therefore, the connected state corresponds to a state in which the does not necessarily refer to the state in which a current, voltage or potential is available or transferable. The signals are transmitted through circuit elements such as wiring, resistors, diodes, and transistors. This also includes the state of being directly connected.

[0064] In this specification, even if components that are independent on the circuit diagram are connected to each other, However, in reality, for example, when a part of a wiring functions as an electrode, one conductive film may be connected to multiple In this specification, the term "connection" refers to such a connection. Cases in which one conductive film has the functions of multiple components are also included in this category.

[0065] In this specification, one of the first electrode and the second electrode of a transistor is a source the first electrode and the second electrode is the drain electrode. Effect of the Invention

[0066] According to one aspect of the present invention, a novel input device that is highly convenient and reliable can be provided. Alternatively, a novel input / output device having excellent convenience or reliability can be provided. It is possible to provide a novel information processing device having excellent reliability. It is possible to provide a novel input device with a display function. Alternatively, a novel input device with high sensitivity can be provided. It is possible to provide a highly reliable input device or the like. It is also possible to provide a device with fewer contact failures. It is possible to provide an input device with a small circuit scale. Alternatively, it is possible to provide an input device capable of detecting multi-touch. New input / output devices, new display devices, display devices with new input functions, display devices with new display functions An input device, a novel information processing device, or a novel semiconductor device can be provided.

[0067] The description of these effects does not preclude the existence of other effects. An embodiment does not necessarily have to have all of these effects. Effects other than these may also be included. The above is self-evident from the description, drawings, claims, etc. Other effects can be extracted from the claims and other descriptions. [Brief description of the drawings]

[0068] [Figure 1] 1A and 1B are diagrams illustrating a configuration of an input device according to an embodiment. [Diagram 2] 4A to 4C are diagrams illustrating the arrangement of conductive films in the input device according to the embodiment. [Diagram 3] 1A and 1B are diagrams illustrating a configuration of an input device according to an embodiment. [Figure 4] 4A to 4C are diagrams illustrating shapes of conductive films of the input device according to the embodiment. [Diagram 5] 1A and 1B are diagrams illustrating a configuration of an input device according to an embodiment. [Figure 6] 1A and 1B are diagrams illustrating a configuration of an input device according to an embodiment. [Figure 7] 1A and 1B are diagrams illustrating a configuration of an input device according to an embodiment. [Figure 8] 1A and 1B are diagrams illustrating a configuration of an input device according to an embodiment. [Figure 9] FIG. 2 illustrates a configuration of a detection circuit according to an embodiment. [Figure 10] 4 is a timing chart illustrating a method for driving the input device according to the embodiment. [Figure 11] 1A and 1B are diagrams illustrating a configuration of an input / output device according to an embodiment. [Figure 12] 1A and 1B are diagrams illustrating a configuration of an input / output device according to an embodiment. [Figure 13] 1A and 1B are diagrams illustrating a configuration of an input / output device according to an embodiment. [Figure 14] FIG. 2 illustrates a configuration of a driver circuit according to an embodiment. [Figure 15] 1A and 1B are diagrams illustrating a configuration of an input device according to an embodiment. [Figure 16] 1A and 1B are diagrams illustrating a configuration of an input device according to an embodiment. [Figure 17] 1A to 1C illustrate a pixel configuration according to an embodiment. [Figure 18] 1A and 1B are diagrams illustrating a configuration of an input device according to an embodiment. [Figure 19] 1A and 1B are diagrams illustrating a configuration of an input device according to an embodiment. [Figure 20] FIG. 2 illustrates a configuration of a driver circuit according to an embodiment. [Figure 21] 1A and 1B are diagrams illustrating a configuration of an input device according to an embodiment. [Figure 22] 1A and 1B are diagrams illustrating a configuration of an input device according to an embodiment. [Diagram 23] 1A and 1B are diagrams illustrating a configuration of an input device according to an embodiment. [Figure 24]1A and 1B are diagrams illustrating a configuration of an input device according to an embodiment. [Diagram 25] 1A and 1B are diagrams illustrating a configuration of an input device according to an embodiment. [Figure 26] 5A to 5C illustrate a method for driving an input / output device according to an embodiment. [Figure 27] 1A and 1B are diagrams illustrating a configuration of an input / output device according to an embodiment. [Figure 28] 1A and 1B are diagrams illustrating a configuration of an input / output device according to an embodiment. [Figure 29] 1A and 1B are diagrams illustrating a configuration of an input / output device according to an embodiment. [Diagram 30] 1A and 1B are diagrams illustrating a configuration of an input / output device according to an embodiment. [Diagram 31] 1A and 1B are diagrams illustrating a configuration of an input / output device according to an embodiment. [Diagram 32] 1A and 1B are diagrams illustrating a configuration of an input / output device according to an embodiment. [Diagram 33] 1A to 1C illustrate a structure of a transistor according to an embodiment. [Diagram 34] 1A to 1C illustrate a structure of a transistor according to an embodiment. [Diagram 35] 1 is a diagram illustrating a configuration of an information processing device according to an embodiment. [Diagram 36] 1A to 1C are diagrams illustrating a structure of a display unit according to an embodiment. [Figure 37] 4 is a flowchart illustrating a program according to the embodiment. [Figure 38] Schematic diagram for explaining image information according to the embodiment. [Figure 39] 1 is a diagram illustrating a configuration of an information processing device and an information processing system according to an embodiment. [Diagram 40] 4 is a flowchart illustrating a program according to the embodiment. [Diagram 41] 1A and 1B are a cross-sectional view and a circuit diagram illustrating a structure of a semiconductor device according to an embodiment. [Diagram 42] FIG. 2 is a block diagram illustrating a configuration of a CPU according to the embodiment. [Diagram 43] FIG. 2 is a circuit diagram illustrating a configuration of a flip-flop circuit according to an embodiment. [Diagram 44] 1A to 1C illustrate a configuration of an electronic device according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0069] The input device according to one embodiment of the present invention has a plurality of conductive films each having a function of capacitively coupling with a nearby object. a driving circuit for selecting one conductive film from the plurality of conductive films in a predetermined order; and a search signal supplying and a detection circuit having a function of detecting the temperature of the input port and a function of supplying a detection signal.

[0070] This allows the proximity of the conductive film to be determined based on the magnitude of the capacitance coupled to the search signal and the conductive film. As a result, the detection can be performed using a potential that changes based on the concentration of the substance. It is possible to provide an excellent and novel input device.

[0071] Hereinafter, an embodiment will be described with reference to the drawings. However, the embodiment may be different from the embodiment. The present invention can be implemented in any manner without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the present invention may be modified in various ways. In addition, in the configuration described below, Reference numerals indicating similar objects are used in different drawings, and the same parts or similar functions are shown. In addition, when referring to a similar function, the term "hatch pattern" is used. In some cases, the same code is used and no particular symbol is given.

[0072] In addition, the contents (or even a part of the contents) described in one embodiment may be used in the embodiment. Another content (or a part of the content) described in the embodiment, and / or one or more other embodiments The application, combination, or replacement of the contents (or part of the contents) described in the form It is possible to do the following:

[0073] The contents described in the embodiments are explained in detail with reference to various figures in each embodiment. This refers to the content that is stated or stated using the text in the specification.

[0074] In addition, a figure (or a part thereof) described in one embodiment may be different from another part of the figure, Another figure (or a part thereof) described in the embodiment, and / or one or more By combining with the figure (or a part of it) described in another embodiment of the present invention , and many more diagrams can be constructed.

[0075] (Embodiment 1) In this embodiment, a configuration of an input device of one embodiment of the present invention will be described with reference to FIGS. He explains.

[0076] FIG. 1 is a diagram illustrating a configuration of an input device 700T according to an embodiment of the present invention. FIG. 1B is an example of a block diagram illustrating a configuration of an input device 700T according to an embodiment of the present invention. FIG. 2 is an example of a block diagram for explaining in detail a part of the input device 700T shown in FIG. 1(C) is a schematic cross-sectional view of the input device 700T taken along the cutting line W1-W2 shown in FIG. Here is one example.

[0077] FIG. 2 is a schematic diagram illustrating an arrangement of conductive films in an input device according to one embodiment of the present invention. FIG. 2(B) is a diagram illustrating a state in which the conductive film is arranged in a circular shape, and FIG. 2(C) is a diagram illustrating a state in which the conductive film is arranged in a curved shape. FIG. 2(C) is a diagram illustrating a state in which the conductive film is arranged in a polygonal shape. FIG. 13 is a diagram illustrating the state in which the

[0078] 3A and 3B are schematic diagrams illustrating an input device according to one embodiment of the present invention. FIG. 3(B) is a schematic diagram illustrating the configuration of an input device having a conductive film to which a plurality of 1 is a schematic diagram illustrating a configuration of an input device including a detection circuit of FIG.

[0079] FIG. 4 is a schematic diagram illustrating a shape of a conductive film of an input device according to one embodiment of the present invention. FIG. 4(B) illustrates the configuration of an input device in which a plurality of diamond-shaped conductive films are arranged. FIG. 4(C) is a schematic diagram for explaining the shape of each side of the conductive film.

[0080] 5 and 6 are diagrams illustrating the configuration of an input device having two drive circuits according to one embodiment of the present invention. FIG. 5(A) illustrates a configuration including two driving circuits and two detection circuits. FIG. 5(B) is a schematic diagram illustrating a configuration having two driving circuits and one detection circuit. FIG. 6(A) is a schematic diagram illustrating a structure having two driving circuits and two input regions on the left and right. FIG. 6(B) is a schematic diagram for explaining the configuration of a liquid crystal display having two driving circuits and two input regions, one above the other. FIG. 13 is a schematic diagram illustrating a configuration for

[0081] FIG. 7 shows the structure of an input device having three driving circuits and three input regions according to one embodiment of the present invention. FIG.

[0082] FIG. 8 illustrates the configuration of an input device having signal lines arranged in different directions according to one embodiment of the present invention. FIG. 8(A) is a schematic diagram showing signal lines arranged in different directions and one driving circuit. FIG. 8(B) is a schematic diagram illustrating the configuration of an input device having the input device. FIG. 2 is a schematic diagram illustrating a configuration of an input device including a signal line and two drive circuits.

[0083] FIG. 9 is a circuit diagram illustrating a configuration of a detection circuit in an input device of one embodiment of the present invention.

[0084] FIG. 10 is a timing chart illustrating a method for driving the input device of one embodiment of the present invention.

[0085] <Example of input device configuration> The input device 700T described in this embodiment includes, for example, a conductive film C1 and a conductive film C2. , signal line ML1, and signal line ML2 (see FIG. 1B).

[0086] The conductive films selected from the plurality of conductive films C including the conductive film C(g, h) are referred to as the conductive films C1 and and the conductive film C2 (see FIG. 1(A)). A signal line selected from a plurality of signal lines ML including the signal line ML1 and the signal line ML2 is used. (See FIG. 1(A)).

[0087] Here, g and h represent variables, where g is an integer of 1 or more, and h is an integer of 1 or more.

[0088] As an example, the signal line ML(g,h) is connected to the conductive film C(g,h), and the signal line M L(1,1) is connected to the conductive film C(1,1). In other words, the numbers in parentheses indicate the connection functions. The description method is used to make the connections easier to understand. The conductive film C can be arranged in a matrix, but is not necessarily required to be arranged in a matrix.

[0089] In addition, the conductive film C1 or the conductive film C2 represents one of the multiple conductive films C. In addition, the signal lines ML1, ML2, ML3, ML4, and ML 5 or signal line ML6 represents one of the multiple signal lines ML.

[0090] As an example, the plurality of conductive films C and the plurality of signal lines ML are provided on the same substrate. By providing them on the same substrate, the manufacturing cost can be reduced. However, one aspect of the present invention is that For example, some of the conductive films C are provided on a substrate, and Another part of the conductive film C may be provided on another substrate.

[0091] For example, the conductive film C2 and the conductive film C1 have regions where they do not overlap each other. The conductive film disposed adjacent to the film C1 can be used as the conductive film C2. A conductive film arranged so as to sandwich another conductive film between C1 can be used as the conductive film C2. Cut.

[0092] For example, the signal line ML1 is electrically connected to the conductive film C1. The conductive film C2 is electrically connected to the conductive film C1 (see FIG. 1(B)). In the figure, the black dots overlapping the signal line ML1 represent the signal line ML1 and the conductive film C1. Similarly, in the region of the conductive film C2, the signal line ML The black dots overlapping with 2 indicate that the signal line ML2 and the conductive film C2 are connected. This shows that.

[0093] For example, the conductive film C1 has a function of capacitively coupling with the adjacent one, and the conductive film C2 has a function of capacitively coupling with the adjacent one. The signal is capacitively coupled to the signal (see Fig. 1(C)). The signal line ML1 and the signal line ML2 are described as if they have different heights. In the cross-sectional view, the signal lines ML1 and ML2 are at the same height. Alternatively, the signal lines ML1 and ML2 may be arranged at different heights. This is also fine.

[0094] The conductive films C including the conductive film C1 and the conductive film C2 are connected to an object such as a finger or a pen. A capacitance can be formed between the conductive films C. As a result, each conductive film C functions as a capacitance element (e.g., The self-capacitance of the conductive film C1 and the self-capacitance of the conductive film C2 can be formed as one of the electrodes. Cut.

[0095] The capacitance formed between the conductive film C1 and an object such as a finger or a pen is called the conductive film C1. This is sometimes called the self-capacitance of the conductive film C2 and the object such as a finger or a pen. The capacitance generated may be called the self-capacitance of the conductive film C2.

[0096] An object such as a finger or a pen approaching the conductive film C1 may generate a capacitance element (e.g., the self- This forms the other electrode of the self-capacitance. In this case, the capacitance between the conductive film C1 and the object such as a finger or a pen (i.e., the capacitance of the conductive film C1) The magnitude of the self-capacitance changes.

[0097] In addition, capacitive coupling occurs between the plurality of conductive films C, for example, between the conductive film C1 and the conductive film C2. In other words, the capacitance value between the conductive film C1 and the conductive film C2 may be The sensor may be configured to detect changes caused by the proximity of an object such as a pen. The capacitance formed between the conductive film C1 and the conductive film C2 is called the capacitance between the conductive film C1 and the conductive film C2. This is sometimes called mutual capacitance.

[0098] From the above, each conductive film C has a function as an electrode for a touch sensor, for example. I can say that.

[0099] For example, each conductive film C may be used not only as an electrode for a touch sensor but also as an electrode for a display element (e.g. For example, the conductive film C may function as a common electrode. C1, conductive film C2, conductive film C(g,h), etc.) are used as common electrodes, sensor electrodes, capacitance electrodes, These may be referred to as the electrode, the first electrode, the second electrode, etc.

[0100] The input device 700T includes, for example, a drive circuit 703 and a detection circuit DC1. (See FIG. 1A). The input device 700T includes a driving circuit 703 or a detection circuit. The circuit DC1 is not included, and another device or another module is the driving circuit 703 or In some cases, the sensor may include a detection circuit DC1.

[0101] In addition, a plurality of signal lines ML are provided on a substrate different from the substrate on which the driving circuit 703 is provided. In this case, each of the signal lines ML may be a connection terminal, a bonding wire, an anisotropic Conductive particles, silver paste, FPC (Flexible printed circuit ) or bumps or the like.

[0102] In addition, a plurality of signal lines ML are provided on the same substrate as the driving circuit 703. In this case, no special connection is required. When the film C or multiple signal lines ML are provided on the same substrate, there is no contact at the connection portion. This reduces the possibility of defects occurring, thereby improving reliability. .

[0103] As an example, the driving circuit 703 is connected to a plurality of conductive films C or a plurality of signal lines ML. If they are provided on the same substrate, they may be provided in the same manufacturing process. Therefore, when they are provided on the same substrate, However, one embodiment of the present invention is not limited to these configurations. stomach.

[0104] For example, the detection circuit DC1 may be a substrate on which a plurality of conductive films C or a plurality of signal lines ML are provided. Alternatively, the detection circuit DC1 may be provided on a substrate separate from the driving circuit 703. may be provided on a substrate different from the substrate on which the

[0105] For example, the detection circuit DC1 may be formed on a single crystal silicon substrate or an SOI substrate. Alternatively, the detection circuit DC1 may be formed on an IC chip. A circuit with high detection accuracy is constructed using transistors with high dynamic capability and low characteristic variation. However, one embodiment of the present invention is not limited thereto.

[0106] For example, the detection circuit DC1 is connected to the multiple signal lines ML without passing through the drive circuit 703. In this case, a plurality of detection circuits DC1 may be provided. The drive circuit 703 is not necessarily provided.

[0107] For example, the driving circuit 703 has a function of selecting at least one of the multiple signal lines ML. Alternatively, for example, the driving circuit 703 may include at least one of the signal lines ML. Alternatively, for example, the driver circuit 703 may have a function of sequentially selecting the signal lines ML. It has the ability to select at least one of them in any order.

[0108] For example, the driver circuit 703 has a function of selecting either the signal line ML1 or the signal line ML2. Equipped with.

[0109] For example, the driving circuit 703 has a function of selecting at least one of the plurality of conductive films C. Specifically, the driving circuit 703 may be, for example, a driving circuit for driving either the conductive film C1 or the conductive film C2. It has the function of selecting.

[0110] For example, the driver circuit 703 may function as a multiplexer or a demultiplexer. Prepare.

[0111] For example, the driving circuit 703 selects the signal line ML1 and the detection circuit ML2 while the signal line ML1 is selected. It has the function of establishing a conductive state between the line DC1 and the line DC2.

[0112] For example, the driving circuit 703 selects the signal line ML2 and the detection circuit ML3 while the signal line ML2 is selected. It has a function of establishing a conductive state between the line DC1 and the line DC2.

[0113] For example, the driving circuit 703 detects the signal line ML1 while the signal line ML1 is not selected. The driving circuit 703 has a function of making the driving circuit 703 non-conductive. When the signal line ML2 is not selected, the signal line ML2 and the detection circuit DC1 are not connected. It has the function of switching the device on.

[0114] For example, the driving circuit 703 drives the signal line ML1 in the flow while the signal line ML1 is not selected. Alternatively, for example, the driving circuit 703 has a function of setting the signal line ML2 When the signal line ML2 is not selected, the signal line ML2 is set to a floating state.

[0115] For example, the driving circuit 703 applies a predetermined voltage to the signal line ML1 while the signal line ML1 is not selected. For example, the driving circuit 703 has a function of supplying a voltage, for example, a constant voltage. During the period when the signal line ML2 is not selected, a predetermined voltage, for example, a constant It has the function of supplying voltage.

[0116] For example, when multiple signal lines ML are connected to the detection circuit DC1 without going through the drive circuit 703, , the number of signal lines ML, the circuit supplying the signal or the circuit reading the signal, 1. Alternatively, one detection circuit is required for each of the multiple signal lines ML. It is necessary to connect the DC1 line.

[0117] The driving circuit 703 has a function of selecting one or more of the multiple signal lines and a function of driving the For example, the function of switching the signal line ML to be selected is provided. This allows the detection circuit DC1 to select only the , the number of circuits supplying signals or circuits reading signals can be reduced. , 1 corresponding to one selected signal line ML from the same number of MLs corresponding to the number of signal lines ML. Alternatively, the number of detection circuits DC1 can be reduced to one selected from multiple circuits. In other words, the number of driving circuits 703 can be reduced to one corresponding to the signal line ML. By doing so, the number of circuits in the detection circuit DC1 or the scale of the circuits can be reduced. Alternatively, the number of detection circuits DC1 can be reduced.

[0118] Note that the driver circuit 703 may be simply called a circuit, a first circuit, a second circuit, or the like.

[0119] The detection circuit DC1 is electrically connected to, for example, the drive circuit 703. The line DC1 has a function of supplying a search signal, for example. In order to perform sensing, a signal is supplied to the signal line ML(g,h) or the conductive film C(g,h). This refers to the signal that is sent.

[0120] For example, the detection circuit DC1 has a function of supplying a square wave as a search signal. The detection circuit DC1 has a function of supplying a pulse signal. The AK4116 has the function of supplying signals to the AK4116.

[0121] For example, the detection circuit DC1 has a function of detecting a change in the capacitance value. C1 has a function of detecting a current value, or the detection circuit DC1 detects the amount of charge. Alternatively, the detection circuit DC1 has a function of integrating a signal. The circuit DC1 has a function of converting a current into a voltage. Alternatively, the detection circuit DC1 detects a voltage value Alternatively, the detection circuit DC1 converts an analog signal into a digital signal. It has the function to convert.

[0122] For example, the detection circuit DC1 has a function of reading a signal from a sensor. The circuit DC1 may be simply referred to as the circuit, the first circuit, the second circuit, etc.

[0123] For example, each signal line ML, for example, the signal line ML1, etc., supplies a search signal, etc. to the conductive film C1. It has the function of

[0124] For example, each signal line ML, for example, signal line ML1, etc., is connected to a predetermined voltage, for example, a common voltage To the conductive film C1, the signal lines ML, for example, the signal line ML1, The function of receiving a search signal from the driving circuit 703 or the detection circuit DC1 is Prepare.

[0125] For example, the magnitude of the capacitance coupled to the conductive film C1 (i.e., the self-capacitance of the conductive film C1) can be detected. In order to achieve this, the signal line ML1 supplies the conductive film C1 with a potential that is changed based on the search signal. It has the following functions (see Figure 1(C)).

[0126] For example, the magnitude of the capacitance coupled to the conductive film C1 (i.e., the self-capacitance of the conductive film C1) can be detected. In order to charge and discharge the self-capacitance of the conductive film C1, the signal line ML1 It has the function of supplying

[0127] For example, the signal lines ML transmit the potential and current of the conductive films C to the Outside the area, for example, the driving circuit 703 or the detection circuit DC1, has the function of extracting.

[0128] For example, the signal lines ML are formed by forming the conductive films C and the conductive films C in a region other than the region where the conductive films are formed, e.g. For example, it has a function of electrically connecting the drive circuit 703 or the detection circuit DC1.

[0129] For example, the signal lines ML have the function of supplying sensor signals to the conductive films C, etc. Yes.

[0130] For example, the signal lines ML have a function of reading out signals for a sensor from the conductive films C, etc. has.

[0131] For example, the signal lines ML have a function of supplying a common voltage to a common electrode of a display element. Therefore, each signal line ML (signal line ML1, signal line ML2, conductive film (g , h) etc.) may be simply referred to as wiring, first wiring, second wiring, etc.

[0132] For example, a user of the input device brings an object such as a finger close to the conductive film C1. The magnitude of the capacitance coupled to the conductive film C1 (i.e., the self-capacitance of the conductive film C1) changes. For example, the capacitance value of the self-capacitance of the conductive film C1 is larger when an object such as a finger is not in proximity than when the object is not in proximity. Therefore, when the self-capacitance of the conductive film C1 is charged and discharged, In other words, when a pulse signal is supplied to the conductive film C1, the potential of the conductive film C1 must be kept constant until the potential of the conductive film C1 reaches a steady state. The amount of current and charge required for the self-capacitance varies depending on the capacitance value of the self-capacitance. For example, a finger When the object is close to the conductive film C1, the capacitance value of the self-capacitance is larger. The amount of current and charge required to reach a steady state is large. As a result, for example, the signal The current flowing through the line ML1 changes under the influence of a finger brought close to the conductive film C1.

[0133] The detection circuit DC1 detects a signal having a value according to the magnitude of the self-capacitance of the conductive films C. It has a function to detect a certain detection signal.

[0134] For example, in order to detect the capacitance value of the self-capacitance, the detection circuit DC1 changes the potential of the signal line ML1 to At that time, the detection circuit DC1 detects a current flowing through the signal line ML1. It is possible to detect the current value, the integral value of the current value, the peak value of the current value, or the amount of charge. As a result, the detection circuit DC1 detects the change in the magnitude of the self-capacitance due to the effect of a finger placed close to the conductive film C1. This allows the detection circuit DC1 to detect the amount of oxidation that occurs when the conductive film C1 is in contact with the conductive film C1. The detection circuit DC1 can detect the user's finger, etc. Furthermore, the detection circuit DC1 outputs the detection result to an external circuit. The signal can be output to the road.

[0135] In particular, in the input device 700T according to one embodiment of the present invention, each of the plurality of conductive films C is That is, the plurality of signal lines ML are connected to the plurality of conductive films C, Therefore, each of the multiple signal lines ML can be controlled individually. In this way, each of the multiple conductive films C can be individually controlled. When multiple objects such as a pen or the like are present and are brought into close proximity to the input device 700T at the same time, In this case, each object can be detected individually. A so-called multi-touch function can be realized.

[0136] The input device 700T according to the embodiment of the present invention has a plurality of input devices each having a function of capacitively coupling with a nearby object. a driving circuit for selecting one of the plurality of conductive films in a predetermined order; a detection circuit having a function of providing a detection signal and a detection circuit having a function of providing a detection signal. This allows the proximity of the conductive film to be determined based on the magnitude of the capacitance that couples with the search signal and the conductive film. This allows for convenient and reliable detection using a voltage that changes based on the amount of It is possible to provide a novel input device with excellent usability.

[0137] The input device 700T may be used, for example, in a so-called self-capacitance touch panel. can be done.

[0138] The input device 700T may be, for example, a linear, straight-line, curved, circular, polygonal, or matrix shape. Specifically, the conductive film C may be arranged in a matrix. As an example, a conductive film C is arranged in a matrix of q conductive films in the row direction and p conductive films in the column direction crossing the row direction. (See FIG. 1(A)).

[0139] Note that g is an integer between 1 and p, and represents a variable. Similarly, h is an integer between 1 and q, p represents the number of conductive films C in the vertical direction, and q represents the number of conductive films C in the horizontal direction. Therefore, p and q are integers equal to or greater than 1.

[0140] For example, when the conductive films C are arranged in a matrix of p rows and q columns, p conductive films C are arranged vertically and In this embodiment, q conductive films C are arranged in the direction of the substrate, and a total of p×q conductive films C are provided. , p represents the number of conductive films C arranged vertically, and q represents the number of conductive films C arranged horizontally. It represents a number.

[0141] In addition, one conductive film selected from the plurality of conductive films C can be used as the conductive film C1. Another conductive film selected from the conductive films C can be used as the conductive film C2.

[0142] In addition, Fig. 2(A) shows an example of a circular arrangement rather than a matrix arrangement, and Fig. 2(B) shows an example of a curved arrangement. An example of this arrangement is shown in FIG. 2(B), and an example of a polygonal arrangement is shown in FIG. 2(C).

[0143] The input device 700T also includes a signal line ML(g, h) electrically connected to the conductive film C(g, h). Here, one signal line ML is connected to the conductive film C(g, h) (see FIG. 1(B)). If connected, the signal lines ML are also marked with the symbols (g, h). For example, the wiring extending in the row direction or the wiring extending in the column direction is designated as a signal line ML(g, h For example, the signal line ML(1,1) is connected to the conductive film C(1,1). It is assumed that the conductive film C(p, q) is connected to a signal line ML(p, q). For example, if the conductive film C is arranged in a matrix of p rows and q columns, there are a total of p×q signal lines. It has a line ML.

[0144] Specifically, for example, a total of 405 conductive films C are arranged in a matrix of 27 rows and 15 columns. In this case, a total of 405 signal lines ML can be used for the input device 700T.

[0145] In addition, the driving circuit 703 selects one signal line ML from the plurality of signal lines ML in a predetermined order, for example. For example, the signal line ML1 is selected from the p×q signal lines ML, and then The signal line ML2 can be selected by

[0146] For example, an example in which a plurality of signal lines are connected to one conductive film is shown in FIG. In this example, three signal lines ML are connected to one conductive film C. For the conductive film C (total of 405 pieces) arranged in ML can be used for the input device 700T. However, the signal The number of lines is not limited to three. In this way, multiple signal lines can be connected to one conductive film. By connecting the wiring, the wiring resistance can be reduced, thereby improving the sensitivity of the sensor. In addition, a plurality of signal lines extending in the same direction on one conductive film can be Although the case where the connection is made is illustrated, one embodiment of the present invention is not limited to this.

[0147] In FIG. 3A, the signal lines ML1, ML2, and ML3 are arranged outside the driver circuit 703. Similarly, outside the driving circuit 703, signal lines ML4, ML5, ML6, ML7, ML8, ML9, ML10, ML11, ML12, ML13, ML14, ML15, ML16, ML17, ML18, ML19, ML20, ML21, ML22, ML23, ML24, ML25, ML26, ML27, The signal line ML5 and the signal line ML6 are connected to each other. The circuit configuration of the driving circuit 703 can be simplified. The number of input terminals can be reduced. However, one aspect of the present invention is not limited to this. Each of the signal lines ML1 to ML6 is connected to a driver circuit 703. Good too.

[0148] The input device 700T may also have, for example, a control line CL. It is electrically connected to the drive circuit 703 and has a function of supplying a control signal to the drive circuit 703. For example, a start pulse signal and a clock signal for controlling the operation of the driving circuit 703 can be generated. A control signal may be a enable signal, a pulse width control signal, or the like.

[0149] In FIG. 1 and other figures, the conductive film C(g, h) is shown as a square. In one embodiment of the invention, the shape is not limited to the above. Rectangle, parallelogram, diamond, star, polygon, circle For example, the shape of the conductive film C(g,h) can be FIG. 4(A) shows a case where the shape is different from that in FIG.

[0150] In addition, each side of the conductive film C(g, h) is a smooth line such as a straight line or a curve. One embodiment of the present invention is not limited to this. For example, each side of the conductive film C(g, h) is smooth. Instead of a line, as shown in FIG. 4(C), a stepped or jagged shape may be used. By forming the conductive film in such a stepped shape, the boundary between one pixel and another conductive film can be easily formed. The pixel boundaries can be aligned to the pixel boundaries.

[0151] In FIG. 1 and other figures, an example in which one driving circuit 703 is provided is shown. One embodiment of the invention is not limited to this. For example, a plurality of driver circuits 703 may be provided. In this case, the detection circuit DC1 may be provided for each of the multiple drive circuits 703. Alternatively, one detection circuit DC1 may be provided for a plurality of driving circuits 703. .

[0152] For example, the case of an input device having two driving circuits is shown in FIG. The device includes a driving circuit 703A, a driving circuit 703B, and a detection circuit connected to the driving circuit 703A. The driving circuit 703 has a detection circuit DC1A and a detection circuit DC1B connected to the driving circuit 703B.

[0153] For example, the odd-numbered signal lines M and ML are connected to a different drive circuit from the drive circuit connected to the even-numbered signal lines ML. By connecting in this way, the driving circuit 703 can be set on the left and right. As a result, the layout can be made more efficient. Since the driver circuits can be distributed, the size of each driver circuit can be reduced. It is possible to create a picture frame.

[0154] The input device shown in FIG. 5B includes a driving circuit 703A and a driving circuit 703B. 03A and a detection circuit DC1 connected to the drive circuit 703B. When the detection circuit DC1 is shared by multiple drive circuits 703, It is necessary to control the operation of 3 to prevent mutual signal interference.

[0155] The method of extracting the signal line ML from the input region where the plurality of conductive films C are provided is as follows: For example, the method is not limited to extracting from a predetermined side of the input area as shown in FIG. The input area may be divided into a plurality of areas, and the signal line ML may be taken out from each area.

[0156] For example, the input area is divided into left and right, and the signal line MLA(1,1) is connected from the area 775A to the area 7 FIG. 6(A) shows an example in which the signal line MLB(1,1) is taken out from 75B. .

[0157] For example, the signal lines MLA(1,1) and MLB(1,1) are located near the center of the input area. The conductive film CA(1,1) is disconnected and not connected. ,1), and the conductive film CB(1,1) is connected to the signal line MLB(1,1), It can be made to work.

[0158] In addition, when the input area is long horizontally, for example, the input area is divided into left and right as shown in FIG. If the input area is vertically long, for example, the input area is divided into upper and lower parts as shown in FIG. 6(B). This makes it possible to shorten the length of the signal lines MLA and MLB. As a result, the parasitic capacitance and wiring resistance of the signal lines MLA and MLB can be reduced. This makes it possible to improve the sensitivity of the sensor.

[0159] In addition, if the diagonal of the horizontally long input area is 10 inches or more, preferably 14 inches or more. For example, as shown in FIG. 6B, the area is divided into upper and lower parts, and the diagonal of the vertically long input area is 10 In the case of 14 inches or more, more preferably 14 inches or more, the area shown in FIG. This will increase the total number of signal lines, but each signal line can be This reduces the parasitic capacitance and wiring resistance of the inputs. A highly sensitive sensor can be realized.

[0160] The input area may be divided into more areas than just two. For example, As shown in Figure 7, in this case, it is divided into three regions, so for example, In addition, a driving circuit 703A, a driving circuit 703B, and a driving circuit 703C may be provided. The input area may be divided into four areas, and signal lines may be taken out from the four sides. The above is not a limitation of one aspect.

[0161] For example, as shown in FIG. 8, a plurality of conductive layers extending in different directions may be arranged on one conductive film. For example, a signal line extending in the vertical direction and a signal line extending in the horizontal direction may be connected to one conductive film. Alternatively, the signal lines extending in both directions may be connected to each other.

[0162] For example, as shown in FIG. 8A, the conductive film C(1,1) is connected to the signal line M LC(1,1) is connected to the signal line MLD(1,1) extending in the horizontal direction. For example, the conductive film C(1,2) is made up of a signal line MLC(1,2) extending in the vertical direction and a signal line MLC(1,2) extending in the horizontal direction. For example, the conductive film C(2,1) is connected to the signal line MLD(1,2) extending vertically. A signal line MLC(2,1) extending in the X-direction and a signal line MLD(2,1) extending in the lateral direction ) is connected.

[0163] By adopting such a configuration, the influence of the wiring resistance of the signal line can be reduced, Even if the input area is large, the sensitivity can be improved. It is possible to realize a sensor.

[0164] Also, for example, the signal lines ML connected to the same conductive film may be connected to each other. For example, the signal line MLC(1,1) and the signal line MLD(1,1) may be connected. For example, the signal line MLC(2,1) and the signal line MLD(2,1) may be connected. However, one embodiment of the present invention is not limited to these. For example, the signal line MLC(1,1) , the signal line MLD(1,1) may not be connected.

[0165] For example, as shown in FIG. 8B, when the signal line MLC(1,1) extending in the vertical direction is connected The driving circuit 703A is arranged so that it is easy to connect the signal lines MLD(1,1 ) and the driver circuit 703B is arranged so that it can be easily connected to the respective signal lines. In this case, for example, vertically extending signals connected to the same conductive film may be connected to the same The signal line MLC and the signal line MLD extending in the horizontal direction are selected simultaneously. is desirable.

[0166] For example, the signal lines MLC(1,1) and MLD(1,1) are selected at the same time. Thus, the conductive film C(1,1) and the detection circuit DC1 are connected to the signal line MLC(1,1) and the signal line A conductive state is established via MLD(1,1).

[0167] For example, the signal lines MLC(1,2) and MLD(1,2) are selected at the same time. Thus, the conductive film C(1,2) and the detection circuit DC1 are connected to the signal line MLC(1,2) and the signal line A conductive state is established through MLD(1,2).

[0168] By controlling the driving circuits 703A and 703B in this manner, the detection circuit DC1 However, one aspect of the present invention is not limited to this. For example, Depending on the situation, only one of the driving circuits 703A and 703B is operated. Either one may be driven while the other is not operated.

[0169] The input device 700T according to one embodiment of the present invention can also be disposed on a dedicated substrate. It is also possible to dispose it on the surface of an opposing substrate or a sealing substrate in a display device. Alternatively, the input device 700T may be disposed on the rear surface of a protective substrate such as a cover glass. Alternatively, a display element or It is also possible to arrange the input device 700T integrally with the pixel.

[0170] Example of configuration The input device according to one embodiment of the present invention includes a conductive film C1, a conductive film C2, a signal line ML1 or a signal line ML In addition, the input device according to one embodiment of the present invention has a conductive film C(g, h) or a signal line ML In addition, the input device according to one embodiment of the present invention can include a driver circuit 703. , a detection circuit DC1 or a control line CL.

[0171] 《Conductive film C1, conductive film C2, conductive film C(g,h), signal line ML1, signal line ML2, signal line ML(g,h), control line CL》 The conductive material is a conductive film C1, a conductive film C2, a conductive film C(g, h), a signal line ML1, a signal The wiring ML1, the signal wiring ML(g, h), the control wiring CL, etc.

[0172] For example, inorganic conductive materials, organic conductive materials, metals, conductive ceramics, etc. are used as conductive films. C1, conductive film C2, conductive film C(g,h), signal line ML1, signal line ML2, signal line ML(g , h) or control line CL, etc.

[0173] Examples of materials include aluminum, gold, platinum, silver, copper, chromium, tantalum, titanium, Select from molybdenum, tungsten, nickel, iron, cobalt, palladium or manganese. The metal elements detected are arranged in the conductive film C1, the conductive film C2, the conductive film C(g, h), the signal line ML1, It can be used for the signal line ML2, the signal line ML(g, h), the control line CL, etc. The alloys containing the above-mentioned metal elements are formed into conductive films C1, C2, C(g, h), It can be used for the signal line ML1, the signal line ML2, the signal line ML(g, h) or the control line CL, etc. In particular, an alloy of copper and manganese is suitable for microfabrication using the wet etching method. do.

[0174] In addition, these conductive films and wiring may be in a mesh shape to improve the light transmittance. Alternatively, a mesh-like structure may be formed in a conductive film or wiring. The material may include a conductive material or a conductive material in the form of nanowires. In the case of a non-translucent material, since there are many gaps, light can pass through it. In other words, by forming it into a mesh or nanowire shape, it is possible to increase the electrical conductivity while maintaining the light transmission. It is possible to make the state as follows.

[0175] For example, a single layer film or a multilayer film can be used. Two-layer structure with titanium film laminated on titanium nitride film, two-layer structure with titanium film laminated on titanium nitride film, titanium nitride Two-layer structure with tungsten film laminated on the film, tantalum nitride film or tungsten nitride film A two-layer structure with a tungsten film laminated on top of the titanium film and an aluminum film on top of the titanium film. A three-layer structure is formed by laminating conductive film C1, conductive film C2, conductive film C3, and a titanium film on top of the conductive film C4. Membrane C(g,h), signal line ML1, signal line ML2, signal line ML(g,h) or control line CL It can be used for the following purposes.

[0176] Note that in one embodiment of the present invention, a light-transmitting material may be used. For example, indium oxide, indium Indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide doped with gallium, etc. The conductive oxide is formed into a conductive film C1, a conductive film C2, a conductive film C(g, h), a signal line ML1, a signal It can be used for the conductive line ML2, the signal line ML(g, h) or the control line CL. When the film C1, the conductive film C2, and the conductive film C(g, h) are integrated with a display device, Since it may be desirable to have light-transmitting properties, it is undesirable to use these materials. It is nice.

[0177] In addition, aluminum is provided on or under the conductive film C1, conductive film C2, conductive film C(g, h), etc. , gold, platinum, silver, copper, chromium, tantalum, titanium, molybdenum, tungsten, nickel A conductive layer of a metal element selected from the group consisting of iron, cobalt, palladium, and manganese is formed on the single layer. Alternatively, the layers may be stacked in multiple layers. This can reduce the resistance. However, when light transmission is required, these conductive films are not disposed in the area through which light is to be transmitted. These conductive films may be disposed only in areas where light does not need to pass through. It is possible to achieve both a reduction in resistance and light transmittance.

[0178] For example, films containing graphene or graphite are called conductive films C1, C2, and C( g, h), signal line ML1, signal line ML2, signal line ML(g, h) or control line CL, etc. There can be.

[0179] Specifically, a film containing graphene oxide is formed, and the film containing graphene oxide is reduced. A film containing graphene can be formed by the above method. Examples of the method include a method using a reducing agent.

[0180] For example, the conductive polymer is formed into a conductive film C1, a conductive film C2, a conductive film C(g, h), a signal line ML1, It can be used for the signal line ML2, the signal line ML(g, h), the control line CL, or the like.

[0181] <<Drive circuit 703>> For example, various sequential circuits such as selection circuits, decoders, or shift registers are driven by Alternatively, a large number of switches can be arranged to turn them on and off. A circuit for controlling (conduction / non-conduction) can be used in the driver circuit 703.

[0182] Specifically, a shift register or the like that has a plurality of selection circuits and a function of supplying a selection signal. can be used for the driver circuit 703. This allows one signal line to be connected to a plurality of signal lines. , can be selected in a predetermined order.

[0183] Depending on the configuration of the drive circuit 703, the number of detection circuits DC1 to be connected may increase. For example, in FIG. 1A, one detection circuit DC1 is connected to the driving circuit 703. However, one embodiment of the present invention is not limited to this. In FIG. 3B, the detection circuit DC11 and the detection circuit DC12 may be connected. , the detection circuit DC13 and the detection circuit DC14 are connected to one drive circuit 703. In this way, by disposing a plurality of detection circuits DC1 in one driving circuit 703, This allows multiple detection circuits DC1 to operate simultaneously. This allows the sensor reading speed to be increased, or the reading time to be extended. Since the distance can be secured, the reading accuracy of the sensor can be improved.

[0184] For example, the transistor can be used in the driving circuit 703 or the sensing circuit DC1.

[0185] "Transistor" For example, a bottom-gate or top-gate transistor is used for the driver circuit 703. It is possible.

[0186] For example, a transistor using a semiconductor containing a group 14 element can be used. In general, a semiconductor containing silicon can be used for the semiconductor film. For example, single crystal silicon The semiconductor film is made of silicon, polysilicon, microcrystalline silicon, amorphous silicon, etc. Transistors can be used. Other types include germanium, gallium, arsenic, etc. A transistor using the above-mentioned semiconductor film can also be used.

[0187] For example, a transistor including an oxide semiconductor can be used. An oxide semiconductor containing indium or an oxide semiconductor containing indium, gallium, and zinc is used as a semiconductor. It can be used for body membranes.

[0188] For example, the leakage current in the off state is In particular, a transistor smaller than the transistors used in the conventional semiconductor film can be used. A transistor including an oxide semiconductor can be used for the second insulating film.

[0189] Alternatively, for example, a transistor using a compound semiconductor can be used. A semiconductor containing gallium arsenide can be used for the semiconductor film.

[0190] For example, a transistor using an organic semiconductor can be used. Organic semiconductors including cesene or graphene can be used for the semiconductor film.

[0191] 《Detection circuit DC1》 For example, oscillator circuits, pulse signal output circuits, current value measurement circuits, peak current measurement circuits, A voltage conversion circuit, an integration circuit, an AD conversion circuit, an amplifier circuit, etc. may be used in the detection circuit DC1. can be done.

[0192] In addition, current value measurement circuits, peak current measurement circuits, current-voltage conversion circuits, integration circuits, or AD conversion circuits A conversion circuit or the like can be used for the detection circuit DC1. Whether or not the conductive film is in close proximity can be detected from the current value, etc. The result of the detection can be supplied to an external circuit as a detection signal.

[0193] For example, oscillator circuits and pulse signals that can generate square waves, sawtooth waves, triangular waves, etc. The output circuit can be used for the detection circuit DC1. This allows the generated signal to be used as a search signal. It can be used for the number.

[0194] When the signal line ML is selected, the detection circuit DC1 is required to read the signal from the sensor. It has a function to output the necessary signals to the sensor.

[0195] During the period when the signal line ML is not selected, the detection circuit DC1 detects the signal line ML as, for example, For example, it is possible to put the signal line ML in a floating state, or to output a constant voltage to the signal line ML. This constant voltage may correspond to a common voltage supplied to a display element, for example. do.

[0196] For example, when an object such as a finger or a pen touches the conductive film C(g, h), the conductive film C1, or the conductive film C 2, etc., the conductive film C(g, h), the conductive film C1, or the conductive film C 2, etc., the conductive film C(g, h), the conductive film C1, the conductive film C2, etc. The capacitance value of the self-capacitance increases.

[0197] For example, a configuration using the current measuring means 311 and the pulse signal output circuit 312 is called a detection circuit D C1 (see FIG. 9(A)). For example, the current measuring means 311 and the pulse signal The signal output circuit 312 is connected in series between the drive circuit 703 and a ground line 313 . It should be noted that the potential supplied to the ground line 313 does not have to be 0 volts.

[0198] The pulse signal output circuit 312 outputs the conductive film C(g, h) and the conductive film C1 through the drive circuit 703. For example, the current measuring means 311 measures the current The amount of current that flows through the sensor is detected, allowing touch sensing to be performed.

[0199] For example, a resistive element 314 and a voltage measuring means 315 can be used for the current measuring means 311. (See FIG. 9(B)). The voltage across the resistor element 314 is measured using a voltage measuring means 315. By setting the value of the current flowing through the current measuring means 311, it is possible to measure the value of the current flowing through the current measuring means 311. Although a current value is measured, one embodiment of the present invention is not limited thereto.

[0200] For example, a circuit having a function for measuring the integral value of a current can be used for the detection circuit DC1. Specifically, an integrating circuit can be configured using the operational amplifier 317. For example, , a capacitance element 316, and an operational amplifier 317 can be used in the detection circuit DC1 (FIG. 9(C )reference).

[0201] For example, an amplifier circuit capable of amplifying a change in potential can be used in the detection circuit DC1. This allows a voltage according to the magnitude of the current flowing through the connected signal line ML(g,h). As a result, the current can be converted into a potential and the converted potential can be amplified. The change can be amplified and supplied as a sensed signal to an external circuit.

[0202] The information detected by the detection circuit DC1 is sent to the next circuit. Examples of the circuit include a memory circuit or a signal processing circuit. It is possible to determine whether the detection circuit DC1 detects the presence of the ionizing radiation. It may be possible.

[0203] Next, the timing for supplying signals to the multiple conductive films C or the multiple signal lines ML will be described ( For example, the pulse signal output circuit of the detection circuit DC1 is Signals are sequentially supplied from 312 to a plurality of signal lines ML.

[0204] As an example, from top to bottom, in other words, from the signal line ML(1,1) in the first row to the signal line ML(1,2) in the last row The signal lines ML are selected in order up to the line ML(p, q), and the conductive films C are selected one by one in order. The selected signal line ML and conductive film C are brought into a conductive state with the detection circuit DC1.

[0205] The detection circuit DC1 outputs a pulse signal to the signal line ML(g,h) and the conductive film C(g,h). At that time, the current that flows is detected and sensing can be performed.

[0206] Note that one embodiment of the present invention has been described in this embodiment. An embodiment of the present invention will be described below. However, the embodiment of the present invention is not limited to these. That is, various inventive aspects are described in this and other embodiments. Therefore, one embodiment of the present invention is not limited to a specific embodiment. However, one embodiment of the present invention is not limited to this. In some cases, or depending on the situation, one aspect of the present invention is to use various sensors, etc. For example, in some cases or circumstances, one aspect of the present invention may The above method does not have to be applied to touch sensors.

[0207] Note that this embodiment describes an example of the basic principle. Any part or all of the above embodiments may be freely combined with any part or all of the other embodiments. It may be implemented in a modified or substituted manner.

[0208] (Embodiment 2) In the first embodiment, the configuration of the input device has been described. For example, the present invention can be applied in combination with an element substrate (TFT In-cell type, the input device and the display element or TFT are integrated on the substrate. It is also possible to construct a display device. In this case, the device is a device that displays images. The output function is to output a signal from the sensor, and the input function is to read a signal from the sensor.

[0209] In this embodiment, a configuration of an input / output device of one embodiment of the present invention will be described with reference to FIG. In addition, explanations of parts that overlap with the explanations in the first embodiment will be omitted. There is.

[0210] FIG. 11 illustrates a configuration of an input / output device 700 according to one embodiment of the present invention.

[0211] FIG. 11A is an example of a block diagram illustrating a configuration of an input / output device 700 of one embodiment of the present invention. be.

[0212] FIG. 11B is a block diagram illustrating in detail a portion of the input / output device 700 shown in FIG. 11A. This is an example.

[0213] FIG. 11C is a schematic cross-sectional view of the input / output device 700 taken along the line W1-W2 shown in FIG. 11B. In FIG. 11C, the signal lines ML1 and ML2 are high-speed Although the description is given assuming that the lengths are different, one embodiment of the present invention is not limited thereto. When viewed in the figure, the signal lines ML1 and ML2 may be disposed at the same height. stomach.

[0214] FIG. 11D shows a display element 750(i,j) that can be used for pixel 702(i,j). FIG. 2 is an example of a circuit diagram illustrating a pixel circuit.

[0215] The input / output device 700 has a display device, which is the same as the input device described with reference to FIG. In other words, the input / output device 700 has the same components as the input device 700T. Therefore, the description of the input device 700T also applies to the input / output device 700. The same can be applied to the above-described case. The above description will be used to refer to the parts that can be used, and different parts will be described in detail.

[0216] The input / output device 700 is configured in such a way that an input device 700T is added to a display device. Alternatively, the input / output device 700 may be a part of a display device and an input In some cases, the device 700T may be configured to share some of its components. When used, a certain member functions as a part of the display device and as an input device 700T. As an example, in FIG. 11, a certain member is In the case where the display device 700A has both a function as a part of the display device and a function as a part of the input device 700T, Here is an example.

[0217] <Example 1 of I / O device configuration> The input / output device 700 described in this embodiment is a display device and the above-mentioned input device 700. In other words, the input / output device 700 is a device for inputting an input to a display device. The input / output device 700 is added to the display device as the input device 700T. Therefore, a certain part of the display device is The input device 700T has a function as a part of the input device 700T. do.

[0218] The input / output device 700 has a function of detecting an object approaching the display surface side of the display device (see FIG. 1 1(C)).

[0219] The display device (output device) includes pixels 702 arranged in an area where a conductive film C1 is provided. (i, j) and the pixel 702(i, k) disposed in the region where the conductive film C2 is provided. ) (see FIG. 11(B) and FIG. 11(C)). Here, i, j, and k are 1 or more. and represents a variable. Also, the value of k is different from the value of j.

[0220] For example, the pixels 702 can be arranged in a matrix. , j) is arranged in the same row as pixel 702(i, k) and in a different column than pixel 702(i, k). can be placed.

[0221] As an example, in the region where the conductive film C1 or the conductive film C2 is provided, a plurality of As an example, a plurality of pixels 702 are provided on one conductive film C1. The pixel 702(i,j) is one of the pixels 702. A plurality of pixels 702 are provided on one conductive film C2. The pixel 702(i, k) is , one of the multiple pixels 702.

[0222] For example, pixel 702(i,j) includes display element 750(i,j), and pixel 702(i,j) In FIG. 11(D), pixel 702(i,j) has a display element 750(i,k). In addition, when the pixel 702(i, j) has a plurality of display elements, There are also.

[0223] The input / output device according to one embodiment of the present invention is a device that is adjacent to a display screen side of the display device. A plurality of conductive films each having a function of capacitive coupling, and a conductive film selected from the plurality of conductive films in a predetermined order. A detection circuit having a function of supplying a search signal and a function of supplying a detection signal. This allows the display device to detect objects that are close to the display screen side of the display device. The detection is performed using a potential that changes based on the magnitude of the capacitance coupled to the conductive membrane and the signal from the probe. As a result, it is possible to provide a novel input / output device that is highly convenient and reliable. can.

[0224] The input / output device 700 also has a plurality of pixels (see FIG. 11B). In other words, the pixels 702(i, j), where m is an integer equal to or greater than i, and n is an integer equal to or greater than j.

[0225] Pixel 702(i,j) also includes a pixel circuit that drives display element 750(i,j), Pixel 702(i,k) may include pixel circuitry that drives display element 750(i,k). For example, the pixel circuit illustrated in FIG. 11(D) can be used for pixel 702(i,j). Note that the pixel 702(i,j) or the pixel 702(i,k) is a pixel having a plurality of display elements.

[0043]

[0226] In addition, the input / output device 700 detects pixels 702(i,1) to 702(i,2) arranged in the same row. The pixel 702 may have a scanning line G(i) electrically connected to the pixel 702. (i,j) or pixel 702(i,1) to pixel 702(i,n) are connected to the scan line G(i). In addition, other wiring may be connected.

[0227] For example, the scanning line G(i) has a function of selecting a pixel connected to the scanning line G(i). Alternatively, the scanning line G(i) may have a function of supplying a selection signal to the pixel, for example. In addition, the scanning line G(i) may supply other signals in addition to the selection signal. The scanning line G(i) is also called the gate line, gate signal line, scan line, wiring, first wiring, etc. This may be the case.

[0228] In addition, the input / output device 700 includes pixels 702(1,j) to 702( m, j) can have a signal line S(j). The pixel 700 includes pixels 702(1,k) through 702(m,k) arranged in the same column. In addition, the pixel 702(i,j) may have a signal line S(k) that is connected to the pixel 702(i,j). , other wiring may be connected in addition to the signal line S(j).

[0229] The signal line S(j) has a function of supplying a video signal to a pixel connected to the signal line S(j), for example. Alternatively, the signal line S(j) may be, for example, a signal line for supplying a video signal to a pixel or a signal line for writing. In addition, the signal line S(i) supplies not only video signals but also other signals. The signal line S(i) may be a source line, a source signal line, a data line, a wiring, a first This may also be called wiring.

[0230] The input / output device 700 is electrically connected to, for example, the scanning lines G(1) to G(m). The driving circuit GD includes, for example, a driving circuit GD for driving the scanning lines G(1) to G( m), and a selection signal is applied to the scanning lines G(1) to G(m) or The driving circuit GD has a function of supplying a selection signal to the pixel 702(i,j). In addition, other signals may be provided.

[0231] The driving circuit GD includes a gate line driving circuit, a gate signal line driving circuit, a scanning line driving circuit, a scanning It may be referred to as a circuit, a circuit, a first circuit, etc.

[0232] The input / output device 700 is electrically connected to, for example, signal lines S(1) to S(n). The driving circuit SD outputs a video signal through signal lines S(1) to S(3). The driver circuit SD has a function of supplying the signal to pixels 702(i,j) and 702(n). In addition to video signals, other signals may also be supplied.

[0233] The driver circuit SD includes a source line driver circuit, a source signal line driver circuit, a video signal line driver circuit, and a data It may be called the data line circuit, circuit, first circuit, etc.

[0234] Example of configuration The input / output device 700 of one embodiment of the present invention includes a display device or an input device 700T.

[0235] In addition, the input / output device 700 of one embodiment of the present invention includes a pixel 702(i,j) or a pixel 702( i, k).

[0236] In addition, the input / output device 700 of one embodiment of the present invention includes a display element 750(i,j) or a display element Equipped with 750(i,k).

[0237] In addition, the input / output device 700 of one embodiment of the present invention includes a scan line G(i), a signal line S(j), and a signal line S(k), a driving circuit GD or a driving circuit SD.

[0238] Input Device The input / output device 700 according to one embodiment of the present invention includes a device adjacent to the display surface of the display device and a capacitor. An input device having a conductive film C1 or C2 with a coupling function can be used. do.

[0239] For example, a conductive film having light transmitting properties can be used for the conductive film C1 or the conductive film C2. Alternatively, an opening, a slit, a comb shape, a lattice shape, etc. may be provided in the region where the display element is provided. A conductive film having the above-mentioned structure can be used as the conductive film C1 or the conductive film C2. A conductive film C1 or a conductive film C2 can be disposed between the display element and the user.

[0240] 《Display device》 For example, an active matrix display device or a passive matrix display device may be used. Alternatively, it may be a lighting device that is not a display device and does not display images or pictures. may also be used.

[0241] <<Display element 750(i,j), display element 750(i,k)>> For example, a display element having a function of controlling light reflection, a display element having a function of controlling light transmission, A display element or a light-emitting element is designated as a display element 750(i,j) or a display element 750(i,k). can be used.

[0242] Specifically, for example, a combination of a liquid crystal element and a polarizing plate or a shutter-type ME MS display element or the like is used for display element 750(i,j) or display element 750(i,k). This can be done.

[0243] Specifically, for example, an organic electroluminescence element, an LED or an inorganic electro The luminescence element, etc. is placed on the display element 750(i,j) or the display element 750(i,k). It can be used.

[0244] 《Pixel 702(i,j), pixel 702(i,k)》 For example, the switching element SW, the capacitance Cp, etc. are connected to the pixel 702(i,j) or the pixel 702( FIG. 11(D) shows an example for pixel 702(i,j). vinegar.

[0245] Specifically, a transistor can be used as the switching element SW. The transistor that can be used in the driver circuit 703 described in the first embodiment is a switch transistor. It can be used as a switching element SW.

[0246] For example, the driving circuit 703 and the pixel 702(i,j) are provided on separate substrates. In this case, the wiring of the pixel 702(i,j) connected to the wiring of the driving circuit 703 may be are connection terminals, bonding wires, anisotropic conductive particles, silver paste, FPC (Flexi The connection is made via a BLE printed circuit or bumps. It becomes.

[0247] For example, a transistor that can be used in the driver circuit 703 and a transistor that can be used in the pixel 702(i,j) The transistors that can be used may be provided on the same substrate. In other words, the driving circuit 703 and the pixel 702(i,j) are formed in the same manufacturing process. This can be done.

[0248] For example, when the driving circuit 703 and the pixel 702(i,j) are provided on the same substrate, This eliminates the need for special connecting parts. As a result, reliability can be improved. In addition, the manufacturing cost can be reduced. However, one embodiment of the present invention is not limited to these configurations.

[0249] Scanning line G(i), signal line S(j) A conductive material can be used for the scan lines G(i) or the signal lines S(j).

[0250] For example, the conductive film C1, the conductive film C2, the signal line ML1, the signal line ML2, the control line CL, etc. Any material that can be used for the scan line G(i) or the signal line S(j) can be used.

[0251] <Drive circuit GD> Various sequential circuits such as a shift register can be used for the driving circuit GD.

[0252] For example, the driver circuit 703, the pixel 702(i,j) or the pixel 702(i,j) described in the first embodiment The transistors used in the elements 702(i, k) and the like can be formed in the same process. A transistor having a dielectric film can be used in the driver circuit GD.

[0253] <Drive circuit SD> Various sequential circuits such as a shift register can be used for the driver circuit SD.

[0254] For example, an integrated circuit can be used for the driver circuit SD. It is to be noted that an integrated circuit formed by using the driver circuit SD may be used. The circuitry may be formed on a silicon substrate.

[0255] For example, the drive circuit SD can be mounted using a COG (chip on glass) method. Specifically, an anisotropic conductive film can be used to mount integrated circuits on pads.

[0256] For example, the driver circuit 703, pixel 702(i,j), and pixel 703 described in the first embodiment 02(i, k) or the transistors used in the driver circuit GD, etc., are formed in the same process. Such a transistor can be used in part or all of the driver circuit SD.

[0257] <Example 2 of I / O device configuration> A structure of an input / output device of one embodiment of the present invention will be described with reference to FIGS. .

[0258] In addition, the above description will be applied to parts in which the same configuration as that described above can be used. By using the above, the part using the wiring COM and the pixel 702(i,j) and the pixel (i , k) a configuration in which liquid crystal elements are used will be described in detail.

[0259] 12 and 13 show a driver circuit that can be used in the input / output device 700 of one embodiment of the present invention. FIG. 12 is a diagram for explaining an example of the configuration of the driving circuit 703. FIG. 13 is a diagram for explaining an example of the configuration of the driving circuit 703B. 3B is connected to the detection circuit DC11 and the detection circuit DC12.

[0260] FIG. 14 illustrates a configuration of a pixel that can be used in the input / output device 700 of one embodiment of the present invention. FIG. 14(A) is a top view of pixel 702(i,j) and pixel 702(i,k). FIG. 14B is an example of a pixel 702 ( 7A and 7B are cross-sectional views of pixel 702(i,j) and a cross-sectional view of pixel 702(i,k) taken along cutting line W5-W6. It is.

[0261] The input / output device 700 described in this embodiment may have, for example, a wiring COM. This is possible (see Figure 11(A)).

[0262] The wiring COM is electrically connected to the driving circuit 703 and has a function of supplying a predetermined potential. For example, a common potential to be supplied to a plurality of display elements can be supplied to the wiring COM.

[0263] For example, the driving circuit 703 selects the signal line ML1 while the signal line ML2 and the wiring C OM, or between signal lines ML other than signal line ML1 and wiring COM. Alternatively, the driver circuit 703 has a function of driving the signal line ML1 while the signal line ML1 is selected. In other words, the drive circuit has a function of making the line ML1 and the line COM non-conductive. The circuit 703 is connected between the signal line ML2 and the wiring COM during the period when the signal line ML2 is in the non-selected state. It has the function of putting the

[0264] The same applies to the period when the signal line ML2 is selected. 703 is a non-conductive resistor between the signal line ML2 and the wiring COM during the period when the signal line ML2 is selected. It has a function to put the device into a through state.

[0265] In addition, the driving circuit 703 selects the signal line ML1 and the wiring CO M, or between a signal line ML other than the signal line ML2 and the wiring COM, Alternatively, the driver circuit 703 has a function of driving the signal line ML2 while the signal line ML2 is selected. The driving circuit has a function of making the line ML2 and the wiring COM non-conductive. 703 is a circuit for connecting the signal line ML1 and the wiring COM while the signal line ML1 is in a non-selected state. It has a function to put it into a conductive state.

[0266] These operations are controlled by, for example, a shift register included in the driver circuit 703 . The shift register sequentially scans and outputs the selection signal. As a result, the signal line ML The conductive state of multiple switches connected to signal line ML1 and signal line ML2 changes. , the signal line ML1 and the signal line ML2 are connected to the wiring COM, or Whether or not the circuit is electrically connected to the circuit DC1 is switched.

[0267] The display element 750(i,j) includes a layer 753 containing a liquid crystal material, a conductive film C1, and a liquid crystal material layer. The pixel electrode 751 ( i, j) (see FIG. 14(A) and FIG. 14(B)). For example, the conductive film C1 is In other words, the conductive film C1 can function as a part of the display element. This electrode functions both as an electrode for a sensor and as an electrode for a display element. In addition, the arrow BL in the figure shows, as an example, the direction in which light emitted from a backlight travels.

[0268] The display element 750(i, k) includes a layer 753 containing a liquid crystal material, a conductive film C2, and a liquid crystal material layer. The pixel electrode 751 ( i, k).

[0269] For example, the conductive film C1, the conductive film C2, or the conductive film C(g, h) is a part of the display element. For example, the conductive film C1, the conductive film C2, or the conductive film C(g, h) The conductive film C1 functions as a common electrode for a plurality of display elements. The conductive film C2 or the conductive film C(g, h) has a function as an electrode for a touch sensor and a function as a surface This also functions as an electrode for a display element.

[0270] For example, a pixel electrode 751(i, j) or a pixel electrode 751(i, k) and the like can be disposed via an insulating film (FIG. 14(A) and FIG. 14(B)).

[0271] For example, a comb shape, a shape having openings, a shape having slits, etc. may be used as the pixel electrode. 751(i,j) and pixel electrode 751(i,k). A liquid crystal element in the FFS mode in which a common electrode is arranged under the pixel electrode is used as a display element. (See FIG. 14(A) and FIG. 14(B)). However, one embodiment of the present invention is Not limited to.

[0272] For example, the pixel electrode 751(i, j) or the pixel electrode 751(i, k) and the like can be disposed with an insulating film interposed therebetween.

[0273] For example, a comb shape, a shape having openings, or a shape having slits may be used as the conductive film C. 1 or conductive film C2. This allows a common electrode to be formed above the pixel electrode. The FFS mode liquid crystal element arranged in the above-mentioned manner can be used as a display element (see FIG. 14(C)). ).

[0274] For example, a comb shape, a shape having openings, a shape having slits, etc. may be used as the pixel electrode. This allows the display of IPS mode liquid crystal elements. It can be used in elements (see Figures 15(A) and 15(B)).

[0275] For example, the pixel electrode 751(i, j) or the pixel electrode 751(i, k) and the like can be arranged via an insulating film (see FIG. 15(B)). Note that one embodiment of the present invention is not limited thereto.

[0276] For example, a pixel electrode 751(i, j) or a pixel electrode 751(i, k) and the like can be disposed with an insulating film interposed therebetween.

[0277] For example, the conductive film C1 or the conductive film C2 and the pixel electrode 751(i,j) or the pixel electrode 75 1(i, k) can be placed on the same plane (see FIG. 15(C)).

[0278] In one embodiment of the present invention, the conductive film C1 or the conductive film C2 is used as an electrode for a touch sensor. However, the present invention is not limited to the case where the electrode has both the function as an electrode for a display element and the function as an electrode for a display element.

[0279] For example, the conductive film C1 or C2 has a function as an electrode for a touch sensor. Specifically, a display element having a conductive film formed of the pixel electrode 751(i, j) and a display element having a common electrode 754 can be used.

[0280] For example, the case corresponding to FIG. 14(C) is shown in FIG. 16(A). Similarly, the case corresponding to FIG. 14(B) is shown in FIG. For example, the case corresponding to FIG. 15(B) is shown in FIG. 16(E). Similarly, the case corresponding to FIG. 15(C) is shown in FIG.

[0281] For example, the conductive film C1, which is an electrode for a touch sensor, can be disposed on the upper side of the insulating film. (See Figures 16(A) and 16(B)).

[0282] For example, the conductive film C1, which is an electrode for a touch sensor, is connected to the pixel electrode 751( i, j) or below the common electrode 754 (FIG. 16(C) and FIG. 16(D)). Note that one embodiment of the present invention is not limited thereto.

[0283] The input / output device according to one embodiment of the present invention includes a display device including a liquid crystal element and a liquid crystal display device that controls the alignment of a liquid crystal material. A plurality of sensors each having a function of controlling the display device and a function of capacitively coupling with a sensor adjacent to the display surface side of the display device. a conductive film and a detection circuit having a function of supplying a search signal and a function of supplying a detection signal; A conductive film is selected from the plurality of conductive films in a predetermined order and electrically connected to a detection circuit or wiring. and a drive circuit having a function of:

[0284] This allows the pixels to be rewritten in a predetermined order. The object close to the display surface side of the device is determined based on the search signal and the magnitude of the capacitance coupled to the conductive film. As a result, it is possible to detect the change in potential depending on the temperature. It is possible to provide a novel input / output device.

[0285] The input / output device 700 also includes a base material 710 and a base material 770 having an area overlapping the base material 710. (See FIG. 14(B)).

[0286] The input / output device 700 also includes a substrate 770 and a substrate 710 that are bonded together (not shown). It has a good sealing material.

[0287] The input / output device 700 has a liquid crystal display (LCD) in an area surrounded by the base material 710, the base material 770, and the sealing material. It has a layer 753 containing the material.

[0288] The individual elements constituting the input / output device 700 will be described below. are not clearly separable, and one component may also be part of another. be.

[0289] For example, the conductive film C1 is a conductive film having a function of capacitively coupling with a nearby object. , which is a common electrode for the display element 750(i,j), and the conductive film C2 is capacitively coupled to the adjacent The conductive film 750 (i, k) functions as a common electrode for the display elements 750 (i, k). The signal line ML1 is a wiring having a function of supplying a signal for the touch sensor and is also a display The signal line ML2 is a common wiring connected to the common electrode for the touch sensor. A wiring having a function of supplying a signal for the display element and connected to a common electrode for the display element. It is a common wiring.

[0290] Example of configuration The input / output device of one embodiment of the present invention further includes a wiring COM in addition to the above structure.

[0291] In addition, the input / output device of one embodiment of the present invention includes a layer 753 containing a liquid crystal material, a pixel electrode 751(i, j) or pixel electrode 751(i, k).

[0292] 《Wiring COM》 A conductive material can be used for the wiring COM and the like.

[0293] For example, the conductive film C1, the conductive film C2, the conductive film C(g, h), the signal line ML1, the signal line ML2, Materials that can be used for the signal lines ML (g, h) or the control lines CL, etc., are used for the wiring COM, etc. It can be used.

[0294] For example, a wiring that has a function of supplying a ground potential, a common potential, a power supply potential, or the like is called a wiring CO It can be used for M.

[0295] For example, the potential to be supplied to the signal line ML1 or the signal line ML2 is supplied by the wiring COM. Alternatively, it can be used as a wiring having a function of supplying different potentials. can be used for wiring COM.

[0296] For example, one terminal of the display element 750(i,j) or the display element 750(i,k) The potential supplied to the line COM can be used as the predetermined potential supplied by the line COM.

[0297] Specifically, a wiring that has the function of alternately supplying two different potentials is used for the wiring COM. This allows the voltage whose polarity is inverted to be applied to the display element 750(i,j) or the display In other words, the display elements can be driven by common inversion driving. The potential of the wiring COM may be changed in a pulsed manner so that the wiring COM can be driven by the For example, a liquid crystal element is used for the display element 750(i,j) or the display element 750(i,k), etc. This can improve the reliability of the input / output device 700. In addition, the power consumption can be reduced. Cut.

[0298] <<Drive circuit 703>> For example, the driver circuit 703 may include a shift register 301 (see FIG. 12). ) In this way, one or more signal lines are selected from the multiple signal lines ML in a predetermined order, A selection signal may be provided to the selection circuit 302, for example.

[0299] For example, the driver circuit 703 may include the selection circuit 302. For example, it has multiple switches. In addition, an inverter is used to invert the selection signal. A converter circuit may be provided. This allows the detection circuit DC1 or the wiring COM to be selectively connected to the signal Select based on the signal, and connect the detection circuit DC1 or wiring COM to the signal line ML. can be made conductive.

[0300] Using the shift register 301, one selection circuit is selected from a plurality of selection circuits in sequence. For example, one of the signal lines ML1, ML2, and ML3 can be selected. As a result, one of the selection circuits electrically connected to the selection signal is The signal line and the detection circuit DC1 can be electrically connected to each other. Alternatively, the selection signal is supplied. It is possible to establish continuity between the signal line electrically connected to the selection circuit that is not connected to the wiring COM. That is, the signal lines ML(g, h) are selected by the selection signal output from the shift register. The conductive state (on / off) of the switch connected to the Conduction state between line ML(g, h) and wiring COM, and signal line ML(g, h) and detection circuit The conduction state between DC1 and DC2 can be controlled.

[0301] <<Display element 750(i,j), display element 750(i,k)>> For example, a liquid crystal element having a function of controlling reflection or transmission of light is used as the display element 750(i, j) or display element 750(i,k).

[0302] Specifically, IPS (In-Plane-Switching) mode, TN (Twis ted Nematic) mode, FFS (Fringe Field Switching ng) mode, ASM(Axially Symmetric aligned Mic ro-cell) mode, OCB (Optically Compensated Bi refringence mode, FLC (Ferroelectric Liquid Crystal Crystal) mode, AFLC (AntiFerroelectric Liquor) mode A liquid crystal element that can be driven using a driving method such as a liquid crystal display (LCD) mode. It can be used.

[0303] In addition, for example, a vertical alignment (VA) mode, specifically, an MVA (Multi-Domain Vertical Alignment mode, PVA (Patterned Ve Artical Alignment) mode, ASV (Advanced Super In this case, a liquid crystal element that can be driven using a driving method such as a (non-repeatable) view mode can be used. can.

[0304] Layer 753 containing liquid crystal material For example, the layer 753 containing a liquid crystal material may be a thermotropic liquid crystal, a low molecular weight liquid crystal, a high molecular weight liquid crystal, Polymer-dispersed liquid crystal, ferroelectric liquid crystal, antiferroelectric liquid crystal, etc. can be used. This allows the formation of cholesteric, smectic, cubic, chiral nematic, A liquid crystal material exhibiting an isotropic phase or the like can be used. Alternatively, a liquid crystal material exhibiting a blue phase can be used. A layer 753 containing a crystalline material may be used.

[0305] <Pixel electrode 751(i,j) or pixel electrode 751(i,k)> A conductive material is used for the pixel electrode 751(i,j) or the pixel electrode 751(i,k), etc. There can be.

[0306] For example, it can be used for the conductive film C1, the conductive film C2, the signal line ML1 or the signal line ML2, etc. The pixel electrode 751(i,j) or the pixel electrode 751(i,k) can be made of a material that can be used for the pixel electrode 751(i,j) or the pixel electrode 751(i,k). can.

[0307] 《Base material 710, base material 770》 The substrate 710 or substrate 770 is made of a material having a heat resistance sufficient to withstand the heat treatment during the manufacturing process. In addition, a light-transmitting material can be used for the base material 710 and / or the base material 77. Can be used for 0.

[0308] For example, 6th generation (1500mm x 1850mm), 7th generation (1870mm x 2200 mm), 8th generation (2200mm x 2400mm), 9th generation (2400mm x 2800 10th generation (2950mm x 3400mm) and other large glass substrates 710 or the substrate 770. This allows the manufacture of a large display device. It is possible.

[0309] An organic material, an inorganic material, or a composite material of an organic material and an inorganic material, etc. is used as the substrate 710 or the substrate 7 For example, inorganic materials such as glass, ceramics, and metals can be used for the substrate 70. 10 or substrate 770.

[0310] Specifically, non-alkali glass, soda-lime glass, potash glass, crystal glass, stone The substrate 710 or the substrate 770 may be made of, for example, quartz or sapphire. The inorganic oxide film, inorganic nitride film, or material containing inorganic oxide nitride is applied to the substrate 710 or can be used for the substrate 770. For example, silicon oxide, silicon nitride, silicon oxynitride, Materials including silicon, aluminum oxide, etc. may be used for the substrate 710 or substrate 770. Stainless steel or aluminum can be attached to the base material 710 or the base material 770. It can be used.

[0311] For example, single crystal semiconductor substrates, polycrystalline semiconductor substrates, silicon or silicon carbide substrates, A compound semiconductor substrate such as germanium, an SOI substrate, or the like is used as the substrate 710 or substrate 770. This allows a semiconductor element to be formed on the base material 710 or the base material 770. This can be done.

[0312] For example, an organic material such as a resin, a resin film, or a plastic is used as the substrate 710 or the substrate 7 70. Specifically, polyester, polyolefin, polyamide, A resin film or plate made of polyimide, polycarbonate, acrylic resin, etc. is used as a substrate. The material 710 or the substrate 770 can be used.

[0313] For example, a metal plate, a thin glass plate, or a film of an inorganic material is laminated to a resin film, etc. A composite material such as a fibrous or A composite material in which particulate metal, glass, or inorganic material is dispersed in a resin film is applied to the substrate 7. 10 or the substrate 770. For example, a fibrous or particulate resin or A composite material in which an organic material or the like is dispersed in an inorganic material is used for the substrate 710 or substrate 770. This can be done.

[0314] In addition, a single layer material or a multi-layer laminated material may be used for the substrate 710 or substrate 770. For example, a substrate and an insulating film that prevents the diffusion of impurities contained in the substrate may be laminated. The above-mentioned materials can be used for the substrate 710 or the substrate 770. Specifically, glass and A silicon oxide layer, silicon nitride layer or silicon oxynitride layer is used to prevent the diffusion of impurities contained in the glass. A material having one or more films selected from a silicon layer, etc., laminated thereon is placed on the substrate 710 or the substrate 7 70. Or, it can be used for resin and silicon oxide that prevents the diffusion of impurities that penetrate the resin. A material having a laminated film of silicon, a silicon nitride film, a silicon oxynitride film, or the like is placed on the substrate 710. or the substrate 770.

[0315] Specifically, polyester, polyolefin, polyamide, polyimide, polycarbonate A resin film such as a cellulose ester or acrylic resin, a resin plate, a laminate, or the like is used as a substrate 710 or a substrate It can be used for material 770.

[0316] Specifically, polyester, polyolefin, polyamide (nylon, aramid, etc.), Polyimide, polycarbonate, acrylic resin, urethane resin, epoxy resin or A material containing a resin having a siloxane bond, such as silicone, is applied to the substrate 710 or the substrate 770. It can be used.

[0317] Specifically, polyethylene terephthalate (PET), polyethylene naphthalate (PE N), polyethersulfone (PES) or acrylic, etc., base material 710 or base material 77 Can be used for 0.

[0318] Also, paper or wood can be used for the substrate 710 or substrate 770 .

[0319] For example, a flexible substrate can be used for the substrate 710 or the substrate 770 .

[0320] Note that a method of forming a transistor, a capacitor, or the like directly on a substrate can be used. In addition, for example, a transistor or A capacitor element or the like is formed, and the formed transistor or capacitor element or the like is attached to a substrate 710 or a substrate 770. This allows the device to be mounted on a flexible substrate, for example. A transistor, a capacitor, or the like can be formed.

[0321] <Example 3 of I / O device configuration> Another configuration of the input / output device of one embodiment of the present invention will be described with reference to FIG.

[0322] In addition, the present invention has a plurality of detection circuits and a driving circuit 703B instead of the driving circuit 703. This differs from the above-mentioned input / output device 700 in that the same configuration as described above is used here. The above description will be used to refer to the parts that can be used, and different parts will be described in detail.

[0323] The wiring COM is electrically connected to the driving circuit 703B and has a function of supplying a predetermined potential. do.

[0324] The driving circuit 703B can select two or more selection circuits from the plurality of selection circuits. Therefore, for example, the signal line ML1, the signal line ML2, the signal line ML3, the signal line ML4, The signal line ML5 and the signal line ML6 are each provided with a function of selecting at least two of them.

[0325] For example, during the period when the signal lines ML1 and ML2 are selected, the driving circuit 703B A conductive state is established between the signal line ML1 and the detection circuit DC11, and a conductive state is established between the signal line ML2 and the detection circuit DC1 2. The driving circuit 703B has a function of making the signal line M While signal line ML1 and signal line ML2 are not selected, In this example, the signal lines ML1 and M The case of L2 is shown here, but the same applies to other signal lines. However, three or more selection circuits may be selected.

[0326] The signal lines ML that are selected simultaneously may be provided at positions separated from each other. For example, instead of the signal lines ML1 and ML2, the signal lines ML1 and ML6 are In this way, the signals are prevented from mixing by separating them. and can be reduced.

[0327] The detection circuit DC11 and the detection circuit DC12 have the same function as the detection circuit DC1. For example, the device has a function for supplying a search signal.

[0328] The input / output device according to one embodiment of the present invention includes a display device including a liquid crystal element and a liquid crystal display device that controls the alignment of a liquid crystal material. A plurality of sensors each having a function of controlling the display device and a function of capacitively coupling with a sensor adjacent to the display surface side of the display device. A conductive film and a plurality of detection circuits each having a function of supplying a search signal and a function of supplying a detection signal. and selecting a plurality of conductive films from the plurality of conductive films in a predetermined order, and connecting the conductive films to a detection circuit or wiring and an electrical and a drive circuit having a function of electrically connecting the

[0329] This allows the pixels to be rewritten in a predetermined order. The object close to the display surface side of the device is determined based on the search signal and the magnitude of the capacitance coupled to the conductive film. As a result, it is possible to detect the change in potential depending on the temperature. It is possible to provide a novel input / output device.

[0330] <Drive circuit 703B> For example, a shift register having a function of supplying a selection signal may be used for the driving circuit 703B. This can be done (see FIG. 13).

[0331] For example, based on the selection signal, the detection circuit DC11 or the wiring COM and the signal line are connected to each other. A selection circuit for controlling the on-state can be used in the driving circuit 703B. Based on the result, a selection is made to control the conduction state between the detection circuit DC12 or the wiring COM and the signal line. A selection circuit can be used for the driver circuit 703B.

[0332] This allows the shift register to be used to select a plurality of selection circuits in sequence from among the plurality of selection circuits. As a result, the signal that is electrically connected to the one selection circuit to which the selection signal is supplied is The line is electrically connected to the detection circuit DC11, and the other selection circuits to which the selection signal is supplied are electrically connected to the detection circuit DC2. and the detection circuit DC12, and the selection signal is not supplied. It is possible to establish electrical continuity between a signal line electrically connected to the circuit and the wiring COM.

[0333] 《Detection Circuit DC11, Detection Circuit DC12》 For example, a configuration that can be used for the detection circuit DC1 described in the first embodiment is The detection circuit DC11 and the sensing circuit DC12 can be used.

[0334] This embodiment may be modified, added, revised, deleted, or altered in whole or in part with respect to other embodiments. This corresponds to an application, a superordinate concept, or a subordinate concept. Any part or all of the present invention may be freely combined with any part or all of the other embodiments, or may be used as appropriate. It can be used or substituted for the above.

[0335] (Embodiment 3) In this embodiment, a configuration of an input device 700TC according to one embodiment of the present invention will be described with reference to FIG. He explains as he goes.

[0336] In the input device 700TC, the electric field that is shielded by a nearby object is formed between the conductive film C1 and the conductive film The conductive film C1 and the conductive film C2 are disposed so as to be formed between the driving circuit 7 03, and a detection circuit DC2 is provided instead of the detection circuit DC1. The conductive film C1 and the conductive film C2 are connected to each other. The signals read from the input device 700T are different from those of the input device 700T described with reference to FIG.

[0337] The arrangement and configuration of the conductive film C1 and the conductive film C2 will be described with reference to FIG. Therefore, the contents described in the input device 700T are the same as those in the embodiment of the present invention. The same can be applied to the input device 700TC. The above description will be used for the parts where the configuration can be used, and the different parts will be described in detail. explain.

[0338] <Example of input device configuration> The input device 700TC described in this embodiment is a conductive input device similar to the input device 700T. The insulating film C1 includes a conductive film C2, a signal line ML1, and a signal line ML2 (see FIG. 17(B)). In addition, a conductive film selected from a plurality of conductive films C is used for the conductive film C1 and the conductive film C2. (See FIG. 17(A)).

[0339] The conductive film C2 has a region that does not overlap with the conductive film C1. The conductive film placed between the conductive films C1 and C2 can be used as the conductive film C2. The conductive film C2 arranged so as to sandwich the conductive film C1 can be used as the conductive film.

[0340] The signal line ML1 is electrically connected to the conductive film C1. The signal line ML2 is electrically connected to the conductive film C2. (See FIG. 17(B)).

[0341] The conductive film C1 and the conductive film C2 have a function of capacitively coupling with each other (see FIG. 17(C)). For example, the plurality of conductive films C are capacitively coupled to each other. Capacitive coupling is performed between C2.

[0342] The capacitance between the conductive films varies depending on what is in close proximity between the conductive films. An object such as a finger or a pen that is in close proximity between the conductive film C1 and the conductive film C2 is The change in capacitance between the conductive film C1 and the conductive film C2 can be used to detect the change in capacitance between the conductive film C1 and the conductive film C2. The change in mutual capacitance between C1 and the conductive film C2 is used to detect the proximity of an object such as a finger or pen. do.

[0343] The input device 700TC includes, for example, a drive circuit 703C, a detection circuit DC2, (See FIG. 17A). Note that the input device 700TC includes a driver circuit 703C or The detection circuit DC2 is not included, and another device or another module is used to drive the drive circuit 703C. or a detection circuit DC2.

[0344] As an example, the driving circuit 703C may be provided in the same manner as the driving circuit 703. For example, the driving circuit 703C may be formed on the same substrate as the plurality of conductive films C or the plurality of signal lines ML. Similarly, for example, the detection circuit DC2 may be provided on the same board as the detection circuit DC1. The second embodiment may be provided in the same manner.

[0345] The driving circuit 703C is electrically connected to, for example, the signal lines ML1 and ML2.

[0346] The detection circuit DC2 is electrically connected to, for example, the drive circuit 703C.

[0347] For example, the driving circuit 703C has a function of selecting at least two of the multiple signal lines ML. Equipped with.

[0348] For example, the driving circuit 703C sequentially selects at least two of the multiple signal lines ML. It has the function of

[0349] For example, the driving circuit 703C drives at least two of the multiple signal lines ML in an arbitrary order. It has the function of selecting with.

[0350] For example, the driving circuit 703C has a function as a multiplexer or a demultiplexer. The driving circuit 703C has a function of selecting the signal line ML1 and the signal line ML2.

[0351] Specifically, two signal lines from the signal line ML(1,1) to the signal line ML(p,q) are connected to a predetermined Alternatively, the driver circuit 703C has a function of selecting one of the plurality of conductive films C in the order of the first conductive film C. Alternatively, the driving circuit 703C may be, for example, a conductive film It has a function of selecting C1 and conductive film C2.

[0352] For example, two driving circuits 703C may be provided. has a function of selecting one of the multiple signal lines ML, and the other driver circuit 703C has a function of selecting one of the multiple signal lines ML, It may also have a function of selecting another one of the multiple signal lines ML.

[0353] For example, during the period when the signal lines ML1 and ML2 are selected, the driving circuit 703C Provides a function for establishing a conductive state between the signal line ML1 and the signal line ML2 and the detection circuit DC2 .

[0354] Alternatively, the driving circuit 703C may be configured to select the signal lines ML1 and ML2 while the signal lines ML1 and ML2 are not selected. The signal line ML1 and the signal line ML2 are provided with a function of making the detection circuit DC2 non-conductive. can.

[0355] Alternatively, the driving circuit 703C may be configured to select the signal lines ML1 and ML2 while the signal lines ML1 and ML2 are not selected. , and has the function of putting the signal lines ML1 and ML2 into a floating state.

[0356] Alternatively, the driving circuit 703C may be configured to select the signal lines ML1 and ML2 while the signal lines ML1 and ML2 are not selected. , a function of supplying a predetermined voltage, for example a constant voltage, to the signal lines ML1 and ML2. In addition, the driving circuit 703C may be simply referred to as a circuit, a first circuit, a second circuit, etc. There is a match.

[0357] For example, when the driving circuit 703C is not used, the multiple signal lines ML are connected to the detection circuit DC2. As a result, the detection circuit DC2 is divided into a number of circuits for supplying signals, the number of which corresponds to the number of signal lines ML. A circuit for reading the signal is required. Alternatively, each of the multiple signal lines ML may have the following: The multiple detection circuits DC2 must be connected one by one.

[0358] For example, when the driving circuit 703C is provided, at least one of the multiple signal lines ML Only two lines are selected at each time point, and the signal line ML selected changes at each specific time point. The detection circuit DC2 includes a circuit for supplying signals corresponding to the two selected signal lines ML. In other words, such a circuit can be provided for the signal line ML(g , h) are not required. Alternatively, it is possible to provide two signal lines ML corresponding to the selected two signal lines ML. Therefore, only one detection circuit DC2 is required, and therefore there is no need to provide multiple detection circuits DC2. This allows the number of circuits in the detection circuit DC2 or the size of the circuits to be reduced. Alternatively, the number of detection circuits DC2 can be reduced.

[0359] The detection circuit DC2 has a function of supplying a search signal, for example. For example, in order to perform sensing, a signal line ML(g,h) or a conductive film C(g,h) is provided with This refers to the signal being supplied.

[0360] For example, the detection circuit DC2 has a function of supplying a square wave as a search signal. The detection circuit DC2 has a function of supplying a pulse signal. The AK4116 has the function of supplying signals to the AK4116.

[0361] Alternatively, the detection circuit DC2 has a function of detecting a change in the capacitance value. C2 has a function of detecting a current value, or the detection circuit DC2 detects the amount of charge. Alternatively, the detection circuit DC2 has a function of integrating a signal. The circuit DC2 has a function of converting a current into a voltage. Alternatively, the detection circuit DC2 detects a voltage value Alternatively, the detection circuit DC2 converts an analog signal into a digital signal. It has the function to convert.

[0362] The detection circuit DC2 has a function of reading a signal from the sensor. 2 may be simply referred to as the circuit, the first circuit, the second circuit, etc.

[0363] The signal line ML1 has a function of receiving a search signal.

[0364] The signal line ML2 is a capacitance value of the mutual capacitance formed between the conductive film C1 and the conductive film C2 and a search It has the function of outputting a signal (current) that changes based on a signal (see Figure 17(C)).

[0365] For example, when a pulse signal is supplied to the signal line ML1, a voltage Vcc is formed between the conductive film C1 and the conductive film C2. A current flows from the signal line ML1 to the signal line ML2 via the mutual capacitance.

[0366] For example, when a user of the input device places a finger or the like close to the conductive film C1 or C2, A part of the electric field formed between the conductive film C1 and the conductive film C2 is interrupted, and the conductive film C1 and the conductive film C As a result, the capacitance value of the mutual capacitance formed between the signal line ML1 and the signal line ML2 becomes smaller. The current value flowing through ML2 becomes smaller due to the influence of an object such as a finger placed close to the input device. do.

[0367] The detection circuit DC2 detects a capacitance between the conductive film C1 and the conductive film C2 according to the magnitude of the mutual capacitance. The input device 700TC has a function of detecting the magnitude of a changing current. The finger changes the value of the current flowing through the mutual capacitance formed between the conductive film C1 and the conductive film C2. This makes it possible to detect the user's finger or the like that is close to the input device. .

[0368] The input device 700TC according to the embodiment of the present invention generates an electric field between the first conductive film and the second conductive film. and the first conductive film and the second conductive film are arranged in a predetermined order so as to form the first conductive film and the second conductive film. a driving circuit for selecting one of the conductive films, a function for supplying a search signal to one of the conductive films, and a function for supplying a potential to the other conductive film and a detection circuit having a function of supplying a detection signal based on the change. Therefore, the size of the electric field blocked between the conductive films and the search signal are used to detect objects close to the conductive films. This allows for convenient and reliable detection using a voltage that changes based on the signal. It is possible to provide a novel input device with excellent usability.

[0369] The input device 700TC can be used as a mutual capacitance type touch panel.

[0370] For example, a plurality of conductive films selected from the plurality of conductive films C and another conductive film selected from the plurality of conductive films C A configuration in which a signal is read using mutual capacitance formed between a plurality of conductive films can be used. Specifically, the mutual capacitance formed near the center of a selected number of conductive films is used. The signal may be read by

[0371] For example, a plurality of conductive films arranged in a vertical direction are connected to form one electrode, and a plurality of conductive films arranged in a horizontal direction are connected to form one electrode. The multiple conductive films arranged in a vertical direction can be connected to each other and used as other electrodes. When one electrode connected to a conductive film and another electrode connected to multiple conductive films in the horizontal direction are used, The largest mutual capacitance is formed near the point. The larger the mutual capacitance formed, the greater the Since it is easier to detect objects, it is recommended to detect objects such as fingers mainly near the intersections. This can be done.

[0372] For example, a phase formed between a plurality of conductive films selected from the plurality of conductive films C and the conductive film C1 The signal may be read using mutual capacitance. This is useful for detecting objects such as fingers. As a result, the conductive film that is not involved in detecting an object such as a finger can be reduced. The mutual capacitance formed between the conductive film and the related conductive film can be reduced, thereby reducing the impact. As a result, the reading sensitivity can be increased.

[0373] For example, a mutual capacitance formed between a conductive film C1 and a conductive film C2 selected from a plurality of conductive films C is may be used to read out the signal.

[0374] The input device 700TC is arranged so as to form an electric field that is shielded by nearby objects. Specifically, the number of conductive films C is q in the row direction, and the number of conductive films C is q in the row direction and q in the cross direction. In the column direction, p conductive films C can be arranged in a matrix (see FIG. 17(A)). For example, when the electrodes are arranged in a matrix of p rows and q columns, the electrodes are provided with p×q conductive films C(g, h). .

[0375] The input device 700TC is arranged so as to form an electric field that is shielded by nearby objects. The driving circuit 703C selects a plurality of conductive films C arranged on the substrate. A driver circuit 703C for selecting a pair of conductive films C in contact therewith is provided.

[0376] Example of configuration The input device according to one embodiment of the present invention includes a conductive film C1, a conductive film C2, a signal line ML1 or a signal line ML In addition, the input device according to one embodiment of the present invention has a conductive film C(g, h) or a signal line ML (g,h), where g is an integer between 1 and p, and h is an integer between 1 and q. The input device according to one embodiment of the present invention is also may have a drive circuit 703C, a detection circuit DC2 or a control line CL.

[0377] <Drive circuit 703C> For example, various sequential circuits such as a selection circuit or a shift register are connected to the driving circuit 703C. It can be used.

[0378] Specifically, a shift register or the like that has a plurality of selection circuits and a function of supplying a selection signal. This allows two or more signals to be output simultaneously from multiple signal lines. For example, the signal lines ML1 to ML4 can be selected in a predetermined order. When selecting the six signal lines up to line ML6, there are various selection patterns.

[0379] For example, first, the signal lines ML1 and ML2 are selected, and then the signal lines ML3 and The signal line ML4 is selected, and then the signal lines ML5 and ML6 are selected. There is a turn.

[0380] In another case, the selection may be made by shifting the signal line one by one. For example, first, the signal line M Select L1 and signal line ML2, then select signal line ML2 and signal line ML3, Then, signal line ML3 and signal line ML4 are selected, and then signal line ML4 and signal line A pattern in which ML5 is selected, and then signal line ML5 and signal line ML6 are selected. There is.

[0381] In addition, the conductive films C1 and C2 are arranged so that the conductive films to be selected are aligned in the horizontal direction. However, one embodiment of the present invention is not limited to this. The signal lines may be selected so that the conductive films are aligned vertically.

[0382] For example, a transistor can be used in the driver circuit 703C.

[0383] 《Detection circuit DC2》 For example, oscillator circuits, pulse signal output circuits, current value measurement circuits, peak current measurement circuits, A voltage conversion circuit, an integration circuit, an AD conversion circuit, an amplifier circuit, etc. may be used in the detection circuit DC2. can be done.

[0384] For example, oscillator circuits and pulse signals that can generate square waves, sawtooth waves, triangular waves, etc. The output circuit can be used for the detection circuit DC2. This allows the generated signal to be used as a search signal. In other words, the signal required to read the signal from the sensor can be When a signal line is selected, it can be output to the sensor. Also, the current that flows at that time It is possible to detect whether a finger or pen is in close proximity to the conductive film based on the value of the resistance. The result of the detection can be supplied to an external circuit as a detection signal. In order to detect the state of the sensor electrodes, a current value measurement circuit, a peak current measurement circuit, and a current-voltage conversion circuit are In some cases, a conversion circuit, an integration circuit, or an AD conversion circuit may be used. During the non-selected period, for example, the signal line ML is set to a floating state, or A constant voltage can be output to the signal line ML. This constant voltage can be, for example, This may correspond to the common voltage supplied to the inputs.

[0385] For example, when detecting a potential, the change in the potential of the connected signal line ML(g,h) is amplified. An amplifier circuit capable of detecting the signal can be used in the detection circuit DC2. The change in potential of the line ML(g,h) can be amplified and supplied as a detection signal.

[0386] For example, a first terminal electrically connected to an oscillation circuit and a second terminal electrically connected to an amplifier circuit The second terminal and the detection circuit DC2 can be used to generate a signal. a potential to be amplified can be supplied to the first terminal and a potential to be amplified can be supplied to the second terminal.

[0387] Next, an example of the detection circuit DC2 is shown. FIG. 18(A) shows a current measuring means 311 and a pulse signal An example of the detection circuit DC2 using the current measuring means 311 and the output circuit 312 is shown. The signal output circuit 312 is, for example, a circuit between the driving circuit 703C and the ground line 313. The potential supplied to the ground line 313 is 0 volts. In addition, the current measuring means 311 and the pulse signal output circuit 312 may be connected to the same wiring. For example, it may be connected to the ground line 313 or to another wire.

[0388] A pulse signal is output from the pulse signal output circuit 312. The pulse signal is 3, the conductive film C(g, h), the conductive film C1, the conductive film C2, etc. The magnitude of the current flowing at that time is detected by current measuring means 311.

[0389] At this time, if an object such as a finger or a pen touches the conductive film C(g, h), the conductive film C1, the conductive film C2, etc. When the conductive film C(g, h), the conductive film C1, the conductive film C2, etc. are close to each other, Therefore, when an object such as a finger or pen is in close proximity, Therefore, the magnitude of the current detected by the current measuring means 311 also becomes smaller. By detecting the magnitude of the current at 11, touch can be sensed.

[0390] As shown in FIG. 18(B), the conduction state of FIG. 18(A) and FIG. 18(C) are switched. Thus, the switches 318A, 318B, 318C, 318D, etc. Alternatively, a wiring that is in a conductive state with the driver circuit 703C may be switched using a switch or the like.

[0391] A specific example of the current measuring means 311 is shown in FIG. 1 includes a capacitance element 316 and an operational amplifier 317. Thus, an integrating circuit can be formed.

[0392] The information detected by the detection circuit DC2 is sent to the next circuit. Examples of the circuit include a memory circuit or a signal processing circuit. It is possible to determine whether the detection circuit DC2 detects the presence of the ionizing radiation. It may be possible.

[0393] This embodiment may be modified, added, revised, deleted, or altered in whole or in part with respect to other embodiments. This corresponds to an application, a superordinate concept, or a subordinate concept. Any part or all of the present invention may be freely combined with any part or all of the other embodiments, or may be used as appropriate. It can be used or substituted for the above.

[0394] (Embodiment 4) In this embodiment, a configuration of an input / output device of one embodiment of the present invention will be described with reference to FIG. explain.

[0395] FIG. 19 illustrates a configuration of an input / output device 700C of one embodiment of the present invention. FIG. 19(B) is a block diagram illustrating a configuration of an input / output device 700C of one embodiment of the present invention. 19(A) is a block diagram illustrating in detail a portion of the input / output device 700C shown in FIG. FIG. 19C is a cross section of the input / output device 700C taken along the line W1-W2 shown in FIG. 19B. FIG. 19(D) shows a display element 702 that can be used for pixel 702(i,j). 50(i,j) and a circuit diagram illustrating a pixel circuit.

[0396] The input / output device 700C has a display device, which will be described with reference to FIG. In other words, the input / output device 700C is different from the input device 700TC. Therefore, the description of the input device 700TC is the same as that of the input / output device 700TC. The same can be applied to the device 700C. The above description will be used for the parts where the same configuration can be used, and the differences will be described in detail. I will explain in detail.

[0397] <Example 1 of I / O device configuration> The input / output device 700C described in this embodiment is a combination of a display device and the above-mentioned input device 70 0TC (see FIG. 19A). That is, the input / output device 700C has An input device 700TC is added, and an input / output device 700C is a part of the display device. The power supply unit 700TC is partly built into the power supply unit 700. The material functions as a part of the display device and as a part of the input device 700TC. It is structured as follows.

[0398] The input device 700TC has a function of detecting an object approaching the display surface side of the display device (see FIG. 19(C)).

[0399] The display device (output device) includes pixels 702 arranged in an area where a conductive film C1 is provided. (i, j) and the pixel 702(i, k) disposed in the region where the conductive film C2 is provided. ) (see FIG. 19(B) and FIG. 19(C)).

[0400] For example, pixel 702(i,j) includes display element 750(i,j), and pixel 702(i,j) In FIG. 19(D), pixel 702(i,j) has a display element 750(i,k). An example of the circuit is shown below.

[0401] The input / output device according to one embodiment of the present invention is a device that is adjacent to a display screen side of the display device. An electric field is formed between the first conductive film and the second conductive film having a capacitive coupling function. Another conductive film is provided, and a drive circuit selects the one conductive film and the other conductive film in a predetermined order. and a function of supplying a search signal to one conductive film and a function of generating a detection signal based on a change in the potential of the other conductive film. and a detection circuit having a function of supplying a display signal to the display device. The magnitude of the electric field blocked between the conductive films and the search signal are measured. This allows for convenient and reliable detection using a voltage that changes based on the signal. It is possible to provide a novel input / output device with excellent performance.

[0402] The input / output device 700C also has a plurality of pixels (see FIG. 19B). The pixels 702(i) are arranged in a matrix with n pixels in the vertical direction and m pixels in the vertical direction, that is, in an array of m rows and n columns. , j), where i is an integer between 1 and m, and j and k are integers between 1 and It is an integer from m to n inclusive, and m and n are integers of 1 or greater. Note that k is different from j.

[0403] Pixel 702(i,j) also includes a pixel circuit that drives display element 750(i,j), Pixel 702(i,k) may include pixel circuitry that drives display element 750(i,k). FIG. 19D shows the pixel circuit of pixel 702(i,j) as an example. Pixel 702(i,j) or pixel 702(i,k) may have multiple display elements. good.

[0404] In addition, the input / output device 700C includes pixels 702(i,1) to 702(i,2) arranged in the same row. (i,n) may have a scan line G(i) electrically connected to it.

[0405] In addition, the input / output device 700C includes pixels 702(1,j) to 702(1,j) arranged in the same column. A signal line S(j) may be electrically connected to (m,j).

[0406] In addition, the input / output device 700C is electrically connected to the scanning lines G(1) to G(m). The driving circuit GD includes, for example, a driving circuit for driving the scanning lines G(1) to G(m). The selection signal is applied to the scanning lines G(1) to G(m) or the pixel 7. It has the function of supplying to 02(i,j), etc.

[0407] The input / output device 700C is electrically connected to the signal lines S(1) to S(n). The driving circuit SD outputs a video signal through signal lines S(1) to S(n). Alternatively, it has a function of supplying the signal to pixel 702(i,j) and the like.

[0408] Example of configuration An input / output device 700C according to one embodiment of the present invention includes a display device or an input device 700TC.

[0409] In addition, the input / output device 700C of one embodiment of the present invention includes a pixel 702(i,j) or a pixel 702 Equipped with (i, k).

[0410] In addition, the input / output device 700C of one embodiment of the present invention includes a display element 750(i,j) or a display element It has children 750(i,k).

[0411] In addition, the input / output device 700C of one embodiment of the present invention includes a scan line G(i), a signal line S(j), a driver It is equipped with a circuit GD or a driving circuit SD.

[0412] Input Device The input / output device 700C according to one embodiment of the present invention is capacitively coupled to an object adjacent to the display surface side of the display device. In this case, an input device having a conductive film C1 or C2 having the function of detecting a contact state can be used.

[0413] For example, a conductive film having light transmitting properties can be used for the conductive film C1 or the conductive film C2. Alternatively, an opening, a slit, a comb shape, a lattice shape, etc. may be provided in the region where the display element is provided. A conductive film having the above-mentioned structure can be used as the conductive film C1 or the conductive film C2. A conductive film C1 or a conductive film C2 can be disposed between the display element and the user.

[0414] 《Display device》 For example, an active matrix display device or a passive matrix display device may be used. Alternatively, it may be a lighting device that is not a display device and does not display images or pictures. may also be used.

[0415] <<Display element 750(i,j), display element 750(i,k)>> For example, the display element 750(i,j) and the display element 750(i , k) may be used.

[0416] 《Pixel 702(i,j), pixel 702(i,k)》 For example, the switching element SW, the capacitance Cp, etc. are connected to the pixel 702(i,j) or the pixel 702( FIG. 19(D) shows an example for pixel 702(i,j). vinegar.

[0417] Specifically, a transistor can be used as the switching element SW. The transistor that can be used in the driver circuit 703 described in the first embodiment is a switch transistor. It can be used as a switching element SW.

[0418] Scanning line G(i), signal line S(j) For example, it can be used for the scanning line G(i) and the signal line S(j) described in the second embodiment. The above-mentioned configuration can be used for the scanning lines G(i) and the signal lines S(j).

[0419] <Drive circuit GD> For example, a configuration that can be used for the driving circuit GD described in the second embodiment is It can be used for road GD.

[0420] <Drive circuit SD> For example, a configuration that can be used for the driving circuit SD described in the second embodiment may be It can be used for road SD.

[0421] <Example 2 of I / O device configuration> The configuration of an input / output device according to one embodiment of the present invention will be described with reference to FIGS. He explains.

[0422] In addition, the above description will be applied to parts in which the same configuration as that described above can be used. By using the above, the part using the wiring COM and the pixel 702(i,j) and the pixel (i , k) a configuration in which liquid crystal elements are used will be described in detail.

[0423] 20 and 21 show a driver circuit that can be used in an input / output device 700C according to one embodiment of the present invention. 20 is a diagram for explaining the configuration of a driving circuit 703C. 21 is a diagram for explaining an example of a configuration in which the driver circuit 703C is used together with the selection circuit MUX.

[0424] The input / output device 700C described in this embodiment may have a wiring COM. (See Figure 19(A)).

[0425] The wiring COM is electrically connected to the driving circuit 703C and has a function of supplying a predetermined potential. do.

[0426] For example, during the period when the signal lines ML1 and ML2 are selected, the driving circuit 703C It has a function of bringing other signal lines ML and the wiring COM into a conductive state.

[0427] For example, during the period when the signal lines ML1 and ML2 are selected, the driving circuit 703C The signal line ML1 and the wiring COM are in a non-conductive state, and the signal line ML2 and the wiring COM are in a non-conductive state. In other words, the driver circuit 703C has a function of making the other signal lines ML non-conductive. During the selected state, the signal line ML1 and the wiring COM are brought into a conductive state, and the signal line ML2 It has the function of establishing electrical continuity between the terminal and wiring COM.

[0428] For example, the driving circuit 703C selects the signal line ML1 while selecting another signal line ML. This function establishes a conductive state between the signal line ML2 and the wire COM, and between the signal line ML2 and the wire COM. In other words, the driving circuit 703C is provided with a During the selected state, the signal line ML1 and the wiring COM are brought into a conductive state, and the signal line ML2 and It has a function to establish electrical continuity between the wiring COM.

[0429] For example, the driving circuit 703C shown in FIG. 20 selects the signal lines ML1 and ML2, Then, signal lines ML3 and ML4 are selected, and then signal lines ML5 and ML6 are selected. The function to select ML6 and select six signal lines from signal line ML1 to signal line ML6 Prepare.

[0430] For example, the driving circuit 703C shown in FIG. 23 selects the signal lines ML1 and ML2, Then, the signal lines ML2 and ML3 are selected, and then the signal lines ML3 and ML4 are selected. ML4 is selected, then signal line ML4 and signal line ML5 are selected, and then signal line M It has a function to select signal line L5 and signal line ML6.

[0431] The driving circuit 703C shown in FIG. 23 includes a shift register 301. For example, The switch register 301 controls a plurality of switches connected to each signal line. The embodiment is not limited to this. For example, a plurality of shift registers may be used in the driving circuit 703C. For example, a shift register that independently controls the switches connected to the signal lines can be used. can be used.

[0432] The display element 750(i,j) includes a layer 753 containing a liquid crystal material, a conductive film C1, and a liquid crystal material layer. The pixel electrode 751 ( i, j) (see FIG. 19(A) and FIG. 19(B)). indicates, as an example, the direction in which light emitted from a backlight travels.

[0433] The display element 750(i, k) includes a layer 753 containing a liquid crystal material, a conductive film C2, and a liquid crystal material layer. The pixel electrode 751 ( i, k).

[0434] The input / output device according to one embodiment of the present invention includes a display device including a liquid crystal element and a liquid crystal display device that controls the alignment of a liquid crystal material. A single inductor having a function of controlling the display device and a function of capacitively coupling with an object close to the display surface side of the display device. Another conductive film is disposed so that an electric field is formed between the first conductive film and the second conductive film. The function of the present invention is to provide a detection signal based on a change in the potential of another conductive membrane. a detection circuit having a function of selecting one conductive film and another conductive film in a predetermined order and detecting the and a drive circuit having a function of electrically connecting to the paths or wiring.

[0435] This allows the pixels to be rewritten in a predetermined order. The object close to the display surface side of the device is determined based on the search signal and the magnitude of the capacitance coupled to the conductive film. As a result, it is possible to detect the change in potential depending on the temperature. It is possible to provide a novel input / output device.

[0436] The input / output device 700C includes a base material 710 and a base material 77 having an area overlapping the base material 710. 0 (see FIG. 14(B)).

[0437] The input / output device 700C is a device in which a base material 770 and a base material 710 are bonded together. The encapsulant is not included.

[0438] In addition, the input / output device 700C is configured such that liquid is not applied to the area surrounded by the base material 710, the base material 770, and the sealing material. The semiconductor device has a layer 753 including a crystalline material.

[0439] The individual elements constituting the input / output device 700C will be described below. The components cannot be clearly separated, and one component may serve as another or may contain a part of another. There is.

[0440] For example, the conductive film C2 is a conductive film having a function of capacitively coupling with a nearby object. The second conductive film is another conductive film disposed so that an electric field is formed between the first conductive film and the second conductive film. The conductive film C2 also serves as a common electrode for the display element 750(i,j+1).

[0441] Example of configuration The input / output device of one embodiment of the present invention further includes a wiring COM in addition to the above structure.

[0442] In addition, the input / output device of one embodiment of the present invention includes a layer 753 containing a liquid crystal material, a pixel electrode 751(i, j) or pixel electrode 751(i, k).

[0443] 《Wiring COM》 For example, the configuration that can be used for the wiring COM described in the second embodiment is It can be used for M.

[0444] <Drive circuit 703C> For example, the shift register 301 having the function of supplying a selection signal is connected to the driving circuit 703C. (see FIG. 20 or FIG. 21).

[0445] For example, based on the selection signal, a conductor is formed between the detection circuit DC2 or the wiring COM and the signal line. A selection circuit for turning on the signal can be used in the driver circuit 703C.

[0446] As a result, for example, two selection circuits can be selected from the multiple selection circuits using the shift register 301. As a result, the selection circuit to which the selection signal is supplied is electrically The connected signal line ML1 and the first terminal of the detection circuit DC2 can be brought into a conductive state. Also, the signal line ML2 electrically connected to another selection circuit to which a selection signal is supplied is , a conductive state can be established between the first terminal of the detection circuit DC1 and the second terminal of the detection circuit DC2. A signal line electrically connected to the selection circuit that is not supplied with power is brought into a conductive state with the wiring COM. That is, the signal line ML The conductive state of the switch connected to (g, h) can be controlled. As a result, the signal line Conduction state between ML(g, h) and wiring COM and signal line ML(g, h) and detection circuit D The conduction state between C1 and C2 can be controlled.

[0447] <<Display element 750(i,j), display element 750(i,k)>> For example, the display element 750(i,j) or the display element 750 The configuration that can be used for display element 750(i,j) or display element 750(i,k) It can be used for (i,k).

[0448] <Example 3 of I / O device configuration> The structure of an input / output device of one embodiment of the present invention will be described with reference to FIG. For example, there are two types of touch sensors: a self-capacitance type and a mutual-capacitance type. A case where the device is operated as a sensor or as a circuit is described below. This allows more accurate sensing. Depending on whether you are away from the input area or your finger is touching the input area, Sensing can be performed in an appropriate manner as appropriate.

[0449] In addition, the selection circuit MUX electrically connected to the drive circuit 703C is included. The detection circuit DC11 and the detection circuit DC12 are electrically connected to X, Through MUX, the detection circuit DC11 and the detection circuit DC12 or the detection circuit DC2, The point that either one is selected is different from the input / output device described with reference to FIG. The above description is used to refer to parts that can use the same configuration as the above description, and The following sections will be explained in detail.

[0450] 《Detection Circuit DC11, Detection Circuit DC12》 For example, a configuration that can be used for the detection circuit DC1 described in the second embodiment is The detection circuit DC11 and the sensing circuit DC12 can be used.

[0451] <<Selection circuit MUX>> The selection circuit MUX selects a circuit to be connected to the drive circuit 703C based on a control signal. For example, the control line CL2 is a circuit that is electrically connected to the drive circuit 703C. It has the function of selecting based on a control signal supplied.

[0452] Specifically, when one selection signal is supplied, the detection circuit DC2 is selected, and the detection circuit DC 2 and the driver circuit 703C. In this case, the detection circuit DC11 and the detection circuit DC12 are selected, and the detection circuit DC11 and the detection circuit DC12 are The detection circuit DC12 and the drive circuit 703C are electrically connected to each other. When the circuit DC2 is selected, it operates in the mutual capacitance mode, and the detection circuits DC11 and When the detection circuit DC12 is selected, it operates in the self-capacitance mode.

[0453] As a result, when one selection signal is supplied, the first terminal of the detection circuit DC2 and the second terminal of the drive circuit The second terminal of the detection circuit DC2 is turned on. A conductive state can be established between the transistor and the signal line ML2. Alternatively, another selection signal can be supplied. When the detection circuit DC11 is turned on, the detection circuit DC11 and the signal line ML1 selected by the drive circuit 703C are electrically connected to each other. The detection circuit DC12 and the signal line ML2 selected by the drive circuit 703C are in a conductive state. can be in a conducting state.

[0454] As an example, the configuration of the selection circuit MUX is shown in FIG. 22. Note that in FIG. 21, An example in which the selection circuit MUX, the detection circuit DC11, and the detection circuit DC12 are applied is shown. However, one embodiment of the present invention is not limited to this. For example, in FIG. UX, detection circuit DC11 and detection circuit DC12 may be applied.

[0455] Or, it is possible to switch between the self-capacitance type and the mutual capacitance type. Such a detection circuit DC3 may be provided. By providing such a detection circuit DC3, The circuit scale and the number of elements of the detection circuit can be reduced. and FIG. 25.

[0456] In FIG. 24, the circuit 303 controls the signal lines ML1, ML2, ML3, etc. The on / off of the switch connected to the line is controlled. The signal line ML that does not perform sensing is The sensing signal line ML is in a conductive state with the detection circuit DC3. At that time, at least two signal lines ML are selected. The detection circuit DC3 also operates. These operations are performed when the signal lines and pixels are scanned. This allows the device to switch between self-capacitance and mutual capacitance types. For example, the circuit 303 may include a plurality of shift register circuits.

[0457] FIG. 25A shows an example of the detection circuit DC3. By switching on and off, it is possible to switch between the self-capacitance type and the mutual capacitance type. For example, in the case of a self-capacitance type, the following can be used: In the case of a mutual capacitance type, the circuit configuration is as shown in FIG. As shown above, the switches can be arranged to create a circuit configuration that matches each operation. Therefore, the circuit configuration of the detection circuit DC3 is not limited to that shown in FIG.

[0458] As a result, in the configuration example 2 of the present embodiment, based on the control signal supplied by the control line CL2, The configuration of the input / output device 700C described in the third embodiment and the configuration of the input / output device 700B described in the third embodiment are the same. A novel input / output system that can be conveniently or reliably switched between the configuration of the device 700 and the A force device can be provided.

[0459] This embodiment may be modified, added, revised, deleted, or altered in whole or in part with respect to other embodiments. This corresponds to an application, a superordinate concept, or a subordinate concept. Any part or all of the present invention may be freely combined with any part or all of the other embodiments, or may be used as appropriate. It can be used or substituted for the above.

[0460] (Embodiment 5) In this embodiment, a driving method of the input / output device of one embodiment of the present invention will be described with reference to FIG. I will explain.

[0461] 26A to 26C illustrate an example of a method for driving the input / output device of one embodiment of the present invention.

[0462] FIG. 26(A1) is a top view showing the input / output device, and FIG. 26(A2) is a top view showing the input / output device. A method for selecting the scanning lines G(1) to G(m) of the input / output device shown in FIG. 1) to C(p,q) are diagrams for explaining a method of selecting conductive films C(p,q).

[0463] FIG. 26(B1) is a top view showing the input / output device, and FIG. 26(B2) is a top view showing the input / output device. A method different from that described using the input / output device scanning method shown in FIG. A method for selecting lines G(1) to G(m) and conductive films C(1,1) to C(p,q) FIG. 13 is a diagram for explaining a method for selecting

[0464] <Drive method 1.> The driving method of the input / output device 700 or the input / output device 700C described in this embodiment is In one frame period of the display device, for example, there are two periods as follows. The above period may be used.

[0465] The input / output device 700 or the input / output device 700C includes scanning lines G(1) to G(m ) (see FIG. 26(A1)). Also, one frame period starts at time 0 and ends at time T0. The period will end.

[0466] In the first period, the scanning lines G(1) to G(m) are selected in sequence. The first period is a so-called video signal input period or signal writing period. It is also possible.

[0467] For example, in a period T(V) starting from time 0, the scanning lines G(1) to G(m) are The scanning lines G(1) to G(m) are selected in order. (See FIG. 26(A2)). This selects the pixels in each row, The video signal is input to the pixels one row at a time.

[0468] For example, during the period T1 shown in the figure, the conductive films C(g,1) to C(g,q ) and the scanning lines G(i) to G(i+x ) in sequence. In addition, during the period T1, a predetermined potential, for example, a common potential, is selected. The conductive film C(g,1) through the conductive film C(g,q) are supplied with the electric current.

[0469] In the second period, the conductive films C(1,1) to C(p,q), that is, the signal lines ML The signal lines (1,1) to ML(p,q) are selected in sequence. Therefore, in the second period, This can also be called a sensing period or a signal reading period.

[0470] For example, if the period is included in one frame period and is after the period T(V), The conductive film C(1,1) to the conductive film C(p,q), that is, the signal line ML(1,1) to the signal line Then, the selected signal lines ML(g,h) and The sensing operation is performed on the conductive films C(1,1) to C(g,h). Conductive film C(p,q), that is, from signal line ML(1,1) to signal line ML(p,q), The manner in which the first selection is made is shown diagrammatically by using a straight line LS (see FIG. 26(A2)).

[0471] In addition, from the conductive film C(1,1) to the conductive film C(p,q), that is, the signal line ML(1,1) When selecting signal lines ML(p, q) from However, one embodiment of the present invention is not limited to this. For example, two pieces are selected in sequence. There are cases like this.

[0472] In addition, when the conductive film C or the signal line ML is selected once, the self-capacitance method and the mutual capacitance method are In the above formula, both read operations are performed continuously, and then the next conductive film C or signal line ML The read operation of the self-capacitance method and the mutual capacitance method can be selected continuously. You may go.

[0473] Or, the first frame is read using the self-capacitance method, and the second frame is read using the mutual capacitance method. Alternatively, for a predetermined period, for a period of several frames or more, the self-capacitance During another predetermined period, the signal is read out by the mutual capacitance method over several frame periods. You may read it.

[0474] In this method, one frame period is divided into at least two periods. The first period in which a video signal is input to the pixel is separated from the second period in which sensing is performed. Therefore, even if sensing is performed during the second period, the display operation is not affected. In other words, each pixel cannot continue to perform display operation over one frame period. In addition, because it is divided into two periods, the speed that scans the pixels and signal lines ML, etc. The first period does not need to coincide with the second period. If more precision is desired, the second period can be made longer than the first period. In order to input the video signal accurately, the first period should be made longer than the second period. It is possible.

[0475] The method for driving the input / output device 700 or the input / output device 700C according to one embodiment of the present invention is and a step of detecting an object in proximity to the conductive film of the input / output device. This allows the device to detect adjacent fingers and other objects using a conductive film to which a predetermined potential is applied. This prevents the influence of the light emitted from the display device and allows image information to be written to the display device. This makes it possible to provide a novel input / output device with excellent reliability.

[0476] <Drive method 2.> The driving method of the input / output device 700 or the input / output device 700C described in this embodiment is In one frame period of the display device, there are a period in which a video signal is input and a period in which a sensing operation is performed. The period in which the work is carried out is not clearly separated from the period in which the work is carried out, but rather both are carried out simultaneously. When viewed on a pixel-by-pixel basis, the input operation of the video signal and the sensing operation are performed in different periods. It is being done.

[0477] The input / output device 700 or the input / output device 700C includes scanning lines G(1) to G(m ) (see FIG. 26(B1)). In addition, the scanning lines G(i) to G(i+x) and The electrically connected pixels are provided in the area overlapping with the conductive films C(g,1) to C(g,q). It is assumed that.

[0478] First, in the input operation of the video signal, the scanning lines G(1) to G(m) are selected in sequence. The operation starts. First, the selection operation starts from the scanning line G(1).

[0479] Next, after a predetermined time has elapsed, that is, before the selection of all the scanning lines is completed, the conductive film C(1,1) to the conductive film C(p,q), that is, the signal line ML(1,1) to the signal line ML( Then, the operation of sequentially selecting from the first through second pixels (p, q) is started (see FIG. 26(B2)).

[0480] At this time, the speed at which the pixels, i.e., the scanning lines G are scanned and the signal lines ML or conductive films The speed of scanning C(g,h) should be the same as that of scanning C(g,h). When a pixel is selected, first, the scanning line G is selected and a video signal is input. After the video signal input is completed, and a predetermined period has elapsed, the signal line ML is selected. At this time, the conductive film C(g,h) is a plurality of Therefore, the signal lines ML It is necessary to shift back the timing at which the selection is made.

[0481] For example, in period T2, scanning lines G(i) to G(i+x) are selected, Assume that a video signal is input to the pixel. In that case, during the period T2, the conductive film C(g , 1) to the conductive film C(g, q), that is, the signal line ML(g, 1) to the signal line ML(g, q ) until the signal line ML In this way, all the signal lines ML(g,q) are selected. In the pixel, first, the scanning line G is selected, and after a predetermined period is completed, the signal line ML As a result, when viewed on a pixel-by-pixel basis, The input operation of the video signal and the sensing operation do not overlap and are performed in different periods.

[0482] In this way, the operations of each pixel are not overlapped, so sensing can be performed In other words, each pixel remains in the same state for one frame period. In addition, one frame period does not need to be divided into multiple periods. Since there is no need for a scanning speed, the scanning speed for selecting each pixel can be slowed down. Power consumption can be reduced.

[0483] The method for driving the input / output device 700 or the input / output device 700C according to one embodiment of the present invention is writing information to a pixel having an area overlapping a predetermined conductive film; and detecting an object in the vicinity. By using a conductive film, it is possible to write image information onto a display device while preventing the influence of nearby fingers, etc. As a result, a novel input / output device with excellent convenience and reliability can be provided. .

[0484] This embodiment may be modified, added, revised, deleted, or altered in whole or in part with respect to other embodiments. This corresponds to an application, a superordinate concept, or a subordinate concept. Any part or all of the present invention may be freely combined with any part or all of the other embodiments, or may be used as appropriate. It can be used or substituted for the above.

[0485] (Embodiment 6) In this embodiment, the configuration of an input / output device according to one embodiment of the present invention will be described with reference to FIGS. The explanation will be given with reference to the above.

[0486] FIG. 27 illustrates a configuration of an input / output device 700D of one embodiment of the present invention. 27(B) is a top view of an input / output device 700D of one embodiment of the present invention. FIG. 7 is a top view of pixel 702(i,j) of input / output device 700D.

[0487] FIG. 28 illustrates a configuration of an input / output device 700D of one embodiment of the present invention. 27A shows an embodiment of the present invention along the cutting lines X1-X2, X3-X4, and X5-X6 in FIG. FIG. 28(B) is a cross-sectional view of the input / output device 700D shown in FIG. FIG. 28(C) is a cross-sectional view for explaining the details of the transistor MD shown in FIG. FIG. 11 is a cross-sectional view for explaining details of a gyroscope MA.

[0488] <Configuration Example of Input / Output Device 700D> The input / output device 700D described in this embodiment includes a base material 710, a base material 770, and a pixel. The semiconductor device includes a substrate 702(i, j), a sealing material 730, and a conductive film CD(g, h) (see FIG. 28). see).

[0489] The substrate 770 has an area that overlaps the substrate 710. The encapsulant 730 is formed on the substrate 710 and the substrate 710. It has a function of bonding material 770 together.

[0490] Pixel 702(i,j) is disposed between substrate 710 and substrate 770.

[0491] The conductive film CD(g, h) is disposed between the substrate 710 and the substrate 770.

[0492] Pixel 702(i,j) comprises a display element 750.

[0493] The display element 750 includes a layer 753 containing a liquid crystal material and a pixel electrode 751. 751 is designed to form an electric field between the conductive film CD(g,h) to control the alignment of the liquid crystal material. are arranged in.

[0494] The layer 753 containing the liquid crystal material is an area surrounded by the substrate 710, the substrate 770, and the sealing material 730. are arranged in.

[0495] The input / output device 700D also includes a transistor MA electrically connected to the display element 750. The pixel electrode 751 is connected to the source electrode or drain electrode of the transistor MA. and electrically connected to the

[0496] The input / output device 700D also includes a scanning line G(i) electrically connected to the transistor MA. and a signal line S(j) electrically connected to the transistor MA (see FIG. 27(B)). In addition, a plurality of transistors electrically connected to the scanning line G(i) and a signal line S(j ) and a plurality of transistors electrically connected to the first transistor (see FIG. 27B).

[0497] Specifically, the conductive film 704 functioning as the gate electrode of the transistor MA is connected to the scanning line G(i ) and a conductive film 712B serving as a source electrode or a drain electrode is It is electrically connected to the signal line S(j) (see FIG. 28(C)).

[0498] The semiconductor film 718 of the input / output device 700D is made of indium, gallium, zinc, and oxygen. Includes.

[0499] The conductive film CD(g, h) of the input / output device 700D is made of indium, gallium, zinc, and and oxygen.

[0500] The input / output device 700D described in this embodiment is made of indium, gallium, zinc, and A transistor MA having a semiconductor film 718 containing indium, gallium, zinc, and oxygen. and a conductive film CD(g,h) containing oxygen. A film containing gallium, zinc and oxygen can be formed in the same process. The film containing indium, gallium, zinc and oxygen formed in one process is called a semiconductor film or As a result, a novel input / output device with excellent convenience and reliability can be obtained. Locations can be provided.

[0501] In addition to the above configuration, the input / output device 700D includes a driving circuit GD or a driving circuit SD. This can be done (see FIG. 27(A)).

[0502] The driving circuit GD is electrically connected to the scanning line G(i) and has a function of supplying a selection signal, for example. The driving circuit SD is electrically connected to the signal line S(j) and supplies, for example, a video signal. Also, for example, the transistor MD can be used in the driver circuit GD. A semiconductor film that can be formed in the same process as the transistor MA is used for the transistor MD. (See Figure 28.)

[0503] In addition, the input / output device 700D has conductive films CD(g, h) arranged in a matrix of p rows and q columns. can.

[0504] The input / output device 700D has one or more conductive films CD(g, h) that overlap each other. There may be a number of pixels 702(i,j).

[0505] In addition, the input / output device 700D is oriented in a direction intersecting the thickness direction of the layer 753 containing a liquid crystal material. In this case, a pixel electrode 751 is used, which is arranged so as to apply an electric field (also called a lateral electric field) in the direction perpendicular to the pixel electrode 751. Cut.

[0506] Below, individual elements constituting the input / output device of one embodiment of the present invention will be described. These components cannot be clearly separated, and one component may serve as another or may be part of another. This may include.

[0507] For example, the conductive film C(g,h) is a conductive film that has a function of capacitively coupling with nearby objects. Together, they serve as the common electrode for display element 750(i,j).

[0508] In addition, the input / output device 700D has a structure KB between the base material 710 and the base material 770. This allows a predetermined distance to be provided between the base material 710 and the base material 770. can.

[0509] The input / output device 700D also has a colored film CF that has an area that overlaps with the display element 750. In addition, the light-shielding film BM has an opening in the area overlapping the display element 750. It is possible.

[0510] In addition, the input / output device 700D has an insulating film 752 between the colored film CF and the layer 753 containing a liquid crystal material. 71. Also, an insulating layer 753 may be provided between the light-shielding layer BM and the layer 753 containing the liquid crystal material. This can eliminate the unevenness caused by the thickness of the colored film CF. The colored film CF or the light-shielding film BM is flattened, or the layer 753 containing the liquid crystal material is formed. The diffusion of impurities can be suppressed.

[0511] In addition, the input / output device 700D includes an alignment film A between the layer 753 containing a liquid crystal material and the base material 710. F1. Also, an alignment layer 753 including a liquid crystal material and a substrate 770 may be provided. It may have the membrane AF2.

[0512] The input / output device 700D also includes an optical film 710P or an optical film 770P. For example, the substrate 710 may be sandwiched between the layer 753 containing the liquid crystal material and the optical element 752. Alternatively, an optical film 710P may be disposed between the layer 753 containing the liquid crystal material. Optical films 770P can be disposed to sandwich substrate 770.

[0513] For example, a polarizing plate can be used for the optical film 710P and the optical film 770P. A polarizing plate is used so that the polarization direction of one light is in a predetermined direction relative to the polarization direction of the other light. Specifically, two linear polarizing plates are arranged in a crossed Nicol relationship. It can be used.

[0514] In addition, the input / output device 700D has a region overlapping with the semiconductor film 718 of the transistor MD. For example, the conductive film 724 may be formed in the same process as the conductive film CD(g, h). Any material capable of being used for the conductive film 724 can be used (see FIG. 28B).

[0515] In addition, the input / output device 700D has an insulating film 701 between the transistor MA and the substrate 710. In addition, an insulating film may be provided between the layer 753 containing a liquid crystal material and the semiconductor film 718. 721B or an insulating film 728. Also, the insulating film 721B and the semiconductor Between the films 718 there may be an insulating film 721A.

[0516] The insulating film 701, for example, suppresses the diffusion of impurities from the base material 710 to the transistor MA. The insulating film 721B or the insulating film 721A has a function of preventing impurities from being introduced into the semiconductor film 718. It has the function of suppressing the spread of objects.

[0517] The insulating film 728 is, for example, a step due to the structure of the transistor MA or the like overlapping with the insulating film 728. It has the function of flattening the difference.

[0518] In addition, the input / output device 700D has an insulating film 706 between the conductive film 704 and the semiconductor film 718. The insulating film 706 has a function of, for example, a gate insulating film.

[0519] The input / output device 700D is electrically connected to the display element 750 or the conductive film CD (g, h). 7. The wiring 711 may be connected to the

[0520] The input / output device 700D may also have a terminal 719 electrically connected to the wiring 711. For example, a flexible printed circuit board FPC can be connected to the terminal 71 by using the conductive member ACF. 9.

[0521] "composition" The input / output device 700D includes a substrate 710, a display element 750, or a conductive film CD (g, h). do.

[0522] In addition, the input / output device 700D includes an insulating film 721B, a layer 753 containing a liquid crystal material, or a pixel electrode Equipped with 751.

[0523] The input / output device 700D includes a transistor MA, a semiconductor film 718, a scanning line G(i) or has a signal line S(j).

[0524] The input / output device 700D may also include a driver circuit GD or a driver circuit SD.

[0525] 《Base material 710, base material 770》 For example, a material selected from the materials that can be used for the base material 710 described in the first embodiment. The material can be used for substrate 710 or substrate 770.

[0526] 《Conductive film 704, conductive film 712A, conductive film 712B, wiring 711, terminal 719》 The conductive material is used for the conductive film 704, the conductive film 712A, the conductive film 712B, the wiring 711, or can be used for terminal 719.

[0527] For example, the conductive film C1, the conductive film C2, and the conductive film C(g, h) described in the first embodiment , signal line ML1, signal line ML2, signal line ML(g, h) or control line CL. The conductive film 704, the conductive film 712A, the conductive film 712B, the wiring 711, or the terminal Can be used for 719.

[0528] Scanning line G(i), signal line S(j) A conductive material can be used for the scan line G(i) or the signal line S(j). For example, a material that can be used for the wiring 711 can be used for the scanning line G(i) or the signal line S(j). It is possible.

[0529] Conductive film CD(g,h) A conductive material can be used for the conductive film CD (g, h). For example, the wiring 711 The materials that can be used for the conductive films CD(g, h) can be used for the conductive films CD(g, h).

[0530] In addition, an oxide semiconductor can be used for the conductive film CD (g, h). At the end of the section, a method for controlling the resistivity of an oxide semiconductor will be described in detail.

[0531] <Insulating film 701, insulating film 706, insulating film 721A, insulating film 721B, insulating film 728, insulating Membrane 771》 For example, insulating inorganic materials, insulating organic materials, or insulating materials containing inorganic and organic materials. The composite material is formed by the insulating film 701, the insulating film 706, the insulating film 721A, the insulating film 721B, and the insulating film 7 28 or the insulating film 771.

[0532] Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, or a film selected from these. The laminated material in which the multiple insulating films are laminated is called an insulating film 701, an insulating film 706, an insulating film 721A, an insulating film 721B, the insulating film 728, or the insulating film 771. For example, a silicon oxide film A silicon nitride film or a silicon oxynitride film, or a laminated material in which a plurality of films selected from these are laminated It can be used.

[0533] Specifically, polyester, polyolefin, polyamide, polyimide, polycarbonate polysiloxane or acrylic resin, or a combination of multiple resins selected from these Layer materials or composite materials are formed as insulating films 721A, 721B, 728, and 771. Also, the insulating film 771 may be formed using a material having photosensitivity.

[0534] For example, polyimide, epoxy resin, acrylic resin, or the like can be used for the insulating film 771. do.

[0535] For example, an insulating film containing hydrogen can be used as the insulating film 721B. By using an insulating film containing hydrogen as the insulating film 721B, the resistivity of the oxide semiconductor can be controlled. It is possible.

[0536] For example, an insulating film is formed in contact with an oxide semiconductor film formed in the same process as the semiconductor film 718. By providing 721B, a material that diffuses hydrogen can be used for the insulating film 721B. Cut.

[0537] At the end of this embodiment, a method for controlling the resistivity of an oxide semiconductor will be described in detail. do.

[0538] Display element 750 For example, a display element having a function of controlling reflection or transmission of light is used as the display element 750. For example, a liquid crystal element and a polarizing plate may be combined, or a shutter type may be used. A MEMS display element or the like can be used.

[0539] Specifically, IPS (In-Plane-Switching) mode, TN (Twis ted Nematic) mode, FFS (Fringe Field Switching ng) mode, ASM(Axially Symmetric aligned Mic) ro-cell) mode, OCB (Optically Compensated Bi refringence mode, FLC (Ferroelectric Liquid Crystal Crystal) mode, AFLC (AntiFerroelectric Liquor) mode, A liquid crystal element that can be driven using a driving method such as a liquid crystal display (LCD) mode. It can be used.

[0540] In addition, for example, a vertical alignment (VA) mode, specifically, an MVA (Multi-Domain Vertical Alignment mode, PVA (Patterned Ve Driven using driving methods such as Vertical Alignment mode and ASV mode A liquid crystal element capable of displaying a transparent image can be used as the display element 750 .

[0541] For example, an electric field is formed that controls the orientation of the liquid crystal material contained in the layer 753 containing the liquid crystal material. The conductive film CD(g,h) and the pixel electrode 751 arranged as above are used for the display element 750. It is possible.

[0542] Layer 753 containing liquid crystal material For example, a liquid crystal material that can be used for the layer 753 containing a liquid crystal material described in the embodiment mode 1 can be used. A liquid crystal material can be used for the layer 753 containing the liquid crystal material.

[0543] 《Pixel electrode 751》 The pixel electrode 751 can be made of a conductive material.

[0544] For example, a material that can be used for the wiring 711 can be used for the pixel electrode 751 .

[0545] Specifically, the pixel electrode 751 can be made of a conductive and light-transmitting material. For example, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, gallium oxide, A conductive oxide such as zinc oxide doped with sulphur can be used. A uniform electric field can be provided without blocking the display of the element 750.

[0546] For example, a comb-like or rectangular shape can be used for the pixel electrode 751 .

[0547] "Transistor MA" For example, a bottom gate type or a top gate type transistor is used as the transistor MA. There can be.

[0548] For example, compared to a transistor that uses amorphous silicon as the semiconductor film, A transistor with a small leakage current in the OFF state can be used for the transistor MA. Specifically, a transistor in which an oxide semiconductor is used for the semiconductor film 718 is referred to as a transistor M It can be used for A.

[0549] This allows the development of pixel circuits that use transistors with amorphous silicon semiconductor films. In comparison, the time during which the pixel circuit can hold a video signal can be extended. Specifically, the selection signal is set to a frequency of less than 30 Hz, preferably 1 Hz or less, and more preferably less than once per minute. This can reduce fatigue that accumulates in the user of the power device. In addition, the power consumption associated with the drive can be reduced. It can be reduced.

[0550] The transistor MA includes a semiconductor film 718 and a conductive film having an area overlapping the semiconductor film 718. 28B). The transistor MA includes a conductive film 712A and and a conductive film 712B.

[0551] The conductive film 704 functions as a gate electrode, and the insulating film 706 functions as a gate insulating film. In addition, the conductive film 712A has either a function of a source electrode or a function of a drain electrode. The conductive film 712B has the other of the source electrode and the drain electrode.

[0552] Semiconductor Film 718 For example, a semiconductor containing a Group 4 element can be used for the semiconductor film 718. A semiconductor containing silicon can be used for the semiconductor film 718. For example, single crystal silicon The semiconductor film 718 may be made of polysilicon, microcrystalline silicon, amorphous silicon, or the like. There can be.

[0553] For example, an oxide semiconductor can be used for the semiconductor film 718. or an oxide semiconductor containing indium, gallium, and zinc is formed into a semiconductor film. It can be used.

[0554] For example, a compound semiconductor can be used for the semiconductor film 718. A semiconductor containing nitrogen can be used for the semiconductor film 718.

[0555] For example, an organic semiconductor can be used for the semiconductor film 718. Specifically, polyacenes Alternatively, an organic semiconductor containing graphene can be used for the semiconductor film 718.

[0556] <Drive circuit GD> Various sequential circuits such as shift registers can be used for the driving circuit GD. For example, , a transistor MD, a capacitor element, and the like can be used in the driver circuit GD.

[0557] For example, the semiconductor film 718 of the transistor MA can be formed in the same process. A transistor including a semiconductor film can be used.

[0558] Specifically, a transistor having the same configuration as the transistor MA is called a transistor MD. Alternatively, a transistor having a different configuration from the transistor MA can be used. It can be used for transistor MD.

[0559] Specifically, a conductive film having an area overlapping with a conductive film 704 having a function of the first gate electrode The transistor having 724 can be used as the transistor MD.

[0560] The transistor MD is a conductive film formed by stacking an insulating film 721A and an insulating film 721B. 724 and the semiconductor film 718 .

[0561] For example, the conductive film 724 is electrically connected to a wiring that supplies the same potential as the conductive film 704. Connect to.

[0562] <Drive circuit SD> For example, an integrated circuit can be used for the driver circuit SD. The formed integrated circuit can be used.

[0563] For example, the drive circuit SD can be mounted using a COG (chip on glass) method. Specifically, an anisotropic conductive film is used to mount the signal line S(j) on a pad electrically connected to the signal line S(j). can.

[0564] "Sealant 730" For example, an inorganic material, an organic material, or a composite material of an inorganic material and an organic material is used for the sealing material 730. There can be.

[0565] For example, an organic material such as a heat-meltable resin or a hardening resin may be used for the sealing material 730. can be done.

[0566] For example, reactive curing adhesives, photocuring adhesives, heat curing adhesives and / or anaerobic adhesives. An organic material such as an adhesive can be used for the sealant 730.

[0567] Specifically, epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, etc. resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyrate) Adhesives containing EVA (ethylene vinyl acetate) resin, etc. are used as sealing material 730. There can be.

[0568] 《Colored film CF》 A material that transmits light of a predetermined color can be used for the colored film CF. The color film CF can be used as a color filter.

[0569] For example, a material that transmits blue light, a material that transmits green light, a material that transmits red light, A material that transmits yellow light or a material that transmits white light can be used for the colored film CF. can.

[0570] 《Light blocking film BM》 A material that blocks light transmission can be used for the light-shielding film BM. This allows, for example, the light-shielding film B M can be used for the black matrix.

[0571] 《Structure KB》 For example, organic materials, inorganic materials, or composite materials of organic and inorganic materials are used for the structure KB. This allows a predetermined interval to be provided between the components sandwiching the structure KB. do.

[0572] Specifically, polyester, polyolefin, polyamide, polyimide, polycarbonate polysiloxane, acrylic resin, or a combination of a plurality of resins selected from these. The structure KB can be made of a composite material. You may do so.

[0573] <<Alignment film AF1, alignment film AF2>> For example, polyimide or the like can be used for the alignment film AF1 or the alignment film AF2. The liquid crystal material is shaped using a rubbing process or photoalignment technology so that it is aligned in a specific direction. The alignment film formed on the substrate can be used.

[0574] Optical Film 710P, Optical Film 770P For example, a polarizing plate, a retardation plate, a diffusion film, an anti-reflection film, a light collecting film, etc. It can be used in the optical film 710P or the optical film 770P. A polarizing plate including the polarizing plate can be used in optical film 710P or optical film 770P.

[0575] In addition, it has an antistatic film that prevents dust from sticking to it, a water-repellent film that makes it difficult for dirt to stick to it, and a film that changes color as it is used. Hard coat film that suppresses scratching is applied to Optical Film 710P or Optical Film Can be used for 770P.

[0576] <Configuration Example of Input / Output Device 700E> Another configuration of the input / output device of one embodiment of the present invention will be described with reference to FIG.

[0577] FIG. 29 illustrates a configuration of an input / output device 700E of one embodiment of the present invention. 27A shows an embodiment of the present invention along the cutting lines X1-X2, X3-X4, and X5-X6 in FIG. FIG. 29(B) is a cross-sectional view of the input / output device 700E shown in FIG. 11 is a cross-sectional view for explaining details of a transistor MDB.

[0578] The input / output device 700E has a conductive film 724B instead of the conductive film 724 (see FIG. 29). (B)), and the conductive film CE(g, h) is replaced with the conductive film CD(g, h) (see FIG. 29 (A)) is different from the input / output device 700D described with reference to FIG. The above description is used to refer to the parts in which the same configuration as that described above can be used, and The following will explain these points in detail.

[0579] The input / output device 700E described in this embodiment includes an insulating film 721A and an insulating film 72 1B, and a conductive film C is provided between the insulating film 721A and the insulating film 721B. The conductive film 724B and the conductive film CE(g,h) are conductive Contains oxide (see FIG. 29(A) or FIG. 29(B)).

[0580] 《Conductive film 724B, conductive film CE(g,h)》 Specifically, the present invention relates to an oxide semiconductor having enhanced conductivity using a method for controlling the resistivity of the oxide semiconductor. A conductor can be used for the conductive film 724B and the conductive film CE(g, h).

[0581] Specifically, indium oxide, indium tin oxide, indium zinc oxide, indium and conductive acids such as oxides containing gallium and zinc, zinc oxide, and zinc oxide doped with gallium. The nitride can be used for the conductive film 724B and the conductive films CE(g, h).

[0582] For example, an oxide semiconductor is used for the conductive film 724B and the conductive film CE (g, h), The material for diffusing the element is applied to the insulating film 72 in contact with the conductive film 724B and the conductive film CE (g, h). 1B. As a result, the conductive film 724B and the conductive film CE(g, h) The resistivity can be reduced.

[0583] At the end of this embodiment, a method for controlling the resistivity of an oxide semiconductor will be described in detail. do.

[0584] <Configuration Example of Input / Output Device 700F> Another configuration of the input / output device of one embodiment of the present invention will be described with reference to FIG.

[0585] FIG. 30 illustrates a configuration of an input / output device 700F of one embodiment of the present invention. 27A shows an embodiment of the present invention along the cutting lines X1-X2, X3-X4, and X5-X6 in FIG. FIG. 30(B) is a cross-sectional view of the input / output device 700F shown in FIG. 1 is a cross-sectional view for explaining details of a transistor MDC.

[0586] In addition, the input / output device 700F is configured such that the top-gate transistor MC is replaced with a bottom-gate transistor The transistor MA is replaced by a top-gate transistor MDC. The conductive film CF(g,h) is replaced with the conductive film CD(g,h). 30(A) is different from the input / output device 7 described with reference to FIG. 00D. Here, we will explain the parts where the same configuration as described above can be used. The above description will be used to explain the differences in detail.

[0587] <<Transistor MC, Transistor MDC>> The transistor MDC includes a conductive film 704 having a region overlapping with the insulating film 701C, and an insulating film 7 01C and a semiconductor film 718 having a region disposed between the conductive film 704. Note that the conductive film 704 functions as a gate electrode (see FIG. 30B).

[0588] The semiconductor film 718 is divided into a first region 718A and a second region 71 8B and a third region overlapping the conductive film 704 between the first region 718A and the second region 718B. and region 718C.

[0589] The transistor MDC includes an insulating film 706 between the third region 718C and the conductive film 704. The insulating film 706 functions as a gate insulating film.

[0590] The first region 718A and the second region 718B have a resistivity lower than that of the third region 718C. The MOS transistor has a low potential and has a function of a source region or a drain region.

[0591] For example, in order to control the resistivity of an oxide semiconductor, which will be described in detail at the end of this embodiment, A first region 718A and a second region 718B are formed in the semiconductor film 718 by using the method described above. Specifically, a plasma treatment using a gas containing a rare gas can be applied. can be done.

[0592] In addition, for example, the conductive film 704 can be used as a mask. The shape of a portion of 18C can be self-aligned to the shape of the end of the conductive film 704.

[0593] The transistor MDC includes a conductive film 712A in contact with the first region 718A and a conductive film 712B in contact with the second region 71 8B. The conductive film 712A and the conductive film 712B are It functions as a source electrode or a drain electrode.

[0594] A transistor that can be formed in the same process as the transistor MDC is called a transistor M. It can be used for C.

[0595] 《Conductive film CF(g,h)》 In one example, the first region 718A and the second region 718B of the semiconductor film 718 are the same. The oxide semiconductor formed in the above process can be used for the conductive film CF(g, h). This makes it possible to simplify the process of fabricating the conductive film CF(g, h).

[0596] <Configuration example of input / output device 700G> Another configuration of the input / output device of one embodiment of the present invention will be described with reference to FIG.

[0597] FIG. 31 illustrates a configuration of an input / output device 700G of one embodiment of the present invention. 27A shows an embodiment of the present invention along the cutting lines X1-X2, X3-X4, and X5-X6 in FIG. 31(B), 31(C), and 31(D) are cross-sectional views of the input / output device 700G. 31(D) is a cross-sectional view illustrating a modification of a portion of the configuration shown in FIG. 31(A).

[0598] In the input / output device 700G, an insulating layer 753 containing a liquid crystal material and an insulating film 728A are provided. The conductive film CF(g, h) is replaced with an insulating film 728A and an insulating film 72 8B, the conductive film CG(g, h) is provided between the input / output device 100 and the output device 102. Here, the same configuration as described above can be used for the parts. The above description will be used to explain the differences, and the differences will be described in detail.

[0599] The input / output device 700G has an insulating film 72 between the layer 753 containing a liquid crystal material and the insulating film 728A. 8B. The input / output device 700G also has an insulating film 728A and an insulating film 728B. The conductive film CG(g,h) is provided on the

[0600] Insulating film 728A For example, the material that can be used for the insulating film 728 can be used for the insulating film 728A. .

[0601] Insulating film 728B For example, the material that can be used for the insulating film 728 can be used for the insulating film 728B. .

[0602] Conductive film CG (g,h) For example, a conductive film having an opening in a region overlapping with a pixel electrode 751 having a comb-tooth shape is It can be used for the conductive film CG (g, h).

[0603] For example, a material having electrical conductivity can be used for the conductive film CG(g,h). The material that can be used for the line 711 can be used for the conductive film CG(g, h).

[0604] Specifically, a material having electrical conductivity and light transmission properties can be used for the conductive film CG (g, h). Cut.

[0605] For example, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, gallium oxide, A conductive oxide such as zinc oxide doped with sulphur can be used. A uniform electric field can be provided without blocking the display of the element 750.

[0606] By the way, the conductive film overlapping the pixel electrode 751 and the opening of the pixel electrode 751 is referred to as a conductive film CG It can be used for (g, h) (see FIG. 31(B)).

[0607] Alternatively, a conductive film that can be disposed in the opening of the pixel electrode 751 is a conductive film CG (g, h ) (see FIG. 31(C)).

[0608] Alternatively, the pixel electrode 751 may have an opening and a non-opening, and the opening and the non-opening may be a part of the pixel electrode 751. The overlapping conductive film can be used as the conductive film CG(g, h) (see FIG. 31(D)).

[0609] <Example of the configuration of the input / output device 700H> Another configuration of the input / output device of one embodiment of the present invention will be described with reference to FIG.

[0610] FIG. 32 illustrates a configuration of an input / output device 700H of one embodiment of the present invention. 27A shows an embodiment of the present invention along the cutting lines X1-X2, X3-X4, and X5-X6 in FIG. FIG. 32(B) is a cross-sectional view of the input / output device 700H shown in FIG. FIG. 2 is a cross-sectional view for explaining details of a transistor MDE.

[0611] In addition, the input / output device 700H is a channel-protected transistor ME. The transistor MA is replaced by a channel protection transistor MDE. The point that has a conductive film CD (g, h) and a pixel electrode 75 1, and a light-shielding film CF is provided between the layer 753 containing a liquid crystal material and the substrate 710. The inclusion of the BM (see FIG. 32(A)) is the same as the input / output device 70 described with reference to FIG. 0D. Here, we will explain the parts where the same configuration as described above can be used. The above description will be used to explain the differences in detail.

[0612] Transistor ME, Transistor MDE By using a channel protection transistor for the transistor ME and the transistor MDE, For example, the transistor MDE can be formed by forming an insulating film 706 which functions as a gate insulating film. The insulating film 721A is disposed so as to sandwich the semiconductor film 718 therebetween (FIG. 32(B)). reference).

[0613] <Method for controlling resistivity of oxide semiconductor> A method for controlling the resistivity of a film containing an oxide semiconductor will be described.

[0614] A film containing an oxide semiconductor having a predetermined resistivity is formed on a conductive film CD(g,h) (see FIG. 28(A)). 29(A) and 29(B), the conductive film CE(g, h) and the conductive film 724B (see FIG. 29(A) and FIG. 29(B) 3) or the conductive film CF(g, h), the first region 718A and the second region 718B (FIG. 3 0(A) and FIG. 30(B).

[0615] For example, the concentration of impurities such as hydrogen and water contained in the oxide semiconductor film and / or oxygen vacancies in the film The method for controlling the resistivity of an oxide semiconductor can be used to control the resistivity of an oxide semiconductor.

[0616] Specifically, the plasma treatment is used to increase the concentration of impurities such as hydrogen and water and / or oxygen vacancies in the film. The method can be used to reduce or eliminate

[0617] Specifically, rare gases (He, Ne, Ar, Kr, Xe), hydrogen, boron, phosphorus and nitrogen A plasma treatment using a gas containing one or more selected from the group consisting of: Plasma treatment in a mixed gas atmosphere of Ar and hydrogen, and ammonia Plasma treatment in a Ni atmosphere, plasma treatment in a mixed gas atmosphere of Ar and ammonia Alternatively, plasma treatment under a nitrogen atmosphere can be applied. This reduces the carrier density. It is possible to provide an oxide semiconductor film having high conductivity and low resistivity.

[0618] Alternatively, ion implantation, ion doping, or plasma immersion ion implantation may be used. Hydrogen, boron, phosphorus, or nitrogen is injected into the oxide semiconductor film by a deposition method or the like. As a result, the oxide semiconductor film can have low resistivity.

[0619] Alternatively, an insulating film containing hydrogen may be formed in contact with the oxide semiconductor film, and the insulating film may be In this way, the carriers in the oxide semiconductor film can be diffused. The density can be increased and the resistivity can be decreased.

[0620] For example, if the hydrogen concentration in the film is 1×10 22 atoms / cm 3 The above insulating films are By forming the oxide semiconductor film in contact with the conductive film, hydrogen can be effectively contained in the oxide semiconductor film. Specifically, a silicon nitride film is used as an insulating film formed in contact with an oxide semiconductor film. can be done.

[0621] Hydrogen contained in the oxide semiconductor film reacts with oxygen that is bonded to metal atoms to become water. Oxygen vacancies are formed in the lattice from which oxygen has been removed (or in the portion from which oxygen has been removed). When hydrogen enters, electrons, which act as carriers, may be generated. Also, some of the hydrogen may be converted to gold. When oxygen bonds to a metal atom, it can generate electrons, which act as carriers. As a result, an oxide semiconductor film with high carrier density and low resistivity can be obtained.

[0622] Specifically, secondary ion mass spectrometry (SIMS) The hydrogen concentration obtained by spectrometry was 8×10 19 atoms / c m 3 More than 1×10 20 atoms / cm 3 More preferably, 5×10 2 0 atoms / cm 3 The oxide semiconductor thus obtained is treated as a conductive film CD(g,h) (see FIG. 28(A)). 29(A) and 29(B), the conductive film CE(g, h) and the conductive film 724B (see FIG. 29(A) and FIG. 29(B) 3) or the conductive film CF(g, h), the first region 718A and the second region 718B (FIG. 3 0(A) and FIG. 30(B).

[0623] On the other hand, when an oxide semiconductor with high resistivity is used for a semiconductor film in which a transistor channel is formed, It is possible.

[0624] For example, an insulating film containing oxygen, in other words, an insulating film capable of releasing oxygen, is called an oxide semiconductor. The insulating film is formed in contact with a conductor, and oxygen is supplied to the oxide semiconductor film from the insulating film, so that the oxide semiconductor film is Oxygen vacancies can be compensated for, and thus an oxide semiconductor film with high resistivity can be obtained. can be done.

[0625] For example, a silicon oxide film or a silicon oxynitride film is formed by using an insulating film capable of releasing oxygen. It can be used in membranes.

[0626] The oxide semiconductor film in which the oxygen vacancies are filled and the hydrogen concentration is reduced is made into a highly purified intrinsic or substantially intrinsic oxide semiconductor film. Here, the term "substantially intrinsic" refers to an oxide semiconductor film that is substantially highly purified and intrinsic. The carrier density of the conductive film is 8×10 11 / cm 3 Less than 1 x 10 11 / cm 3 less than 1×10 10 / cm 3 High purity or pure Since a substantially highly pure intrinsic oxide semiconductor film has few carrier generation sources, the carrier density is low. In addition, the degree of oxidation can be reduced by using high-purity intrinsic or substantially high-purity intrinsic oxide semiconductors. Since the conductor film has a low defect state density, the trap state density can be reduced.

[0627] Further, a transistor including a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film is provided. has a significantly smaller off-state current and a channel width of 1×10 6 μm and the channel length L is 10 μm. Even for elements, the voltage between the source and drain electrodes (drain voltage) is 1V to 10V In the range of 1, the off-state current is below the measurement limit of the semiconductor parameter analyzer, that is, 1 ×10 -13 It can have characteristics of A or less.

[0628] The above-mentioned high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor film is used for a channel region. The transistor using this method has small fluctuations in electrical characteristics and is highly reliable.

[0629] Specifically, secondary ion mass spectrometry (SIMS) The hydrogen concentration obtained by spectrometry was 2×10 20 atoms / c m 3 Less than or equal to 5×10 19 atoms / cm 3 Less than or equal to 1×10 1 9 atoms / cm 3 Below, 5 x 10 18 atoms / cm 3 Less than 1 x 10 18 atoms / cm 3 Less than or equal to 5×10 17 atoms / cm 3 Below, More preferably, 1×10 16 atoms / cm 3 The following oxide semiconductor is used as a transistor: The present invention can be suitably used for a semiconductor in which a channel of a transistor is formed.

[0630] Note that the transistor MDB includes the semiconductor film 718 and has a higher hydrogen concentration and and / or an oxide semiconductor film having a large amount of oxygen vacancies and low resistivity is used as the conductive film 724B. (See Figure 29(B)).

[0631] Alternatively, the hydrogen concentration in the conductive film 724B is twice as high as the hydrogen concentration in the semiconductor film 718. times or more, preferably 10 times or more.

[0632] The resistivity of the conductive film 724B is 1×10 -8 more than 1×1 0 -1 It is less than double.

[0633] Specifically, the resistivity of the conductive film 724B is 1×10 -3Ωcm or more 1×10 4 Less than Ωcm , preferably 1 x 10 -3 Ωcm or more 1×10 -1 It is less than Ωcm.

[0634] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification. .

[0635] (Embodiment 7) In this embodiment, a transistor that can be used as an input device or an input / output device according to one embodiment of the present invention will be described. The configuration of the transistor will be described with reference to FIG.

[0636] <Example of semiconductor device configuration> FIG. 33A is a top view of the transistor 100, and FIG. 33C is a top view of the transistor 100 shown in FIG. FIG. 33(D) corresponds to a cross-sectional view taken along the line X1-X2 shown in FIG. 33(A). 33(A) corresponds to a cross-sectional view taken along the line Y1-Y2 in FIG. In order to avoid complication, some of the components of the transistor 100 (gate insulator) are In addition, the direction of the cutting line X1-X2 is The channel length direction and the cutting line Y1-Y2 direction may be referred to as the channel width direction. In the top view of the transistor, the constituent elements are the same as those in FIG. In some cases, some elements may be omitted in the illustration.

[0637] The transistor 100 is used in an input / output device 700D described in the sixth embodiment. It is possible.

[0638] For example, when the transistor 100 is used as the transistor MA, the substrate 102 is In FIG. 01C, the conductive film 104 is replaced with the conductive film 704, and the insulating film 106 and the insulating film 107 are replaced with a laminated film. The insulating film 706 is formed on the insulating film 706, the oxide semiconductor film 108 is formed on the semiconductor film 708, and the conductive film 112a is formed on the conductive film 7 12A, the conductive film 112b is laminated to the conductive film 712B, and the insulating film 114 and the insulating film 116 are laminated. The insulating film 716 and the insulating film 118 can be read as an insulating film 721B. do.

[0639] The transistor 100 includes a conductive film 104 over a substrate 102, which functions as a gate electrode, and a 102 and an insulating film 106 on the conductive film 104, an insulating film 107 on the insulating film 106, and an insulating film The oxide semiconductor film 108 on the first gate 107 and the source The conductive film 112a serving as an electrode and the drain electrically connected to the oxide semiconductor film 108 The transistor 100 has a conductive film 112b which functions as an in-electrode. In more detail, an insulating film 114 is formed over the conductive films 112a and 112b and the oxide semiconductor film 108. The insulating films 114, 116, and 118 are provided on the transistor. It functions as a protective insulating film for the capacitor 100.

[0640] In addition, the oxide semiconductor film 108 is formed by dividing the first oxide semiconductor film 108 by the conductive film 104 functioning as a gate electrode. a first oxide semiconductor film 108a and a second oxide semiconductor film 108 on the first oxide semiconductor film 108a. b. The insulating film 106 and the insulating film 107 are It functions as an insulating film.

[0641] The oxide semiconductor film 108 is In-M (wherein M is Ti, Ga, Sn, Y, Zr, La, For example, an oxide of In-M-Zn, which represents Ce, Nd, or Hf, or an oxide of In-M-Zn can be used. In particular, it is preferable to use In-M-Zn oxide for the oxide semiconductor film 108.

[0642] The first oxide semiconductor film 108a has a first oxide semiconductor layer in which the atomic ratio of In is larger than the atomic ratio of M. The second oxide semiconductor film 108b has a region The second region has a lower atomic ratio of In than the first region. It has a thinner portion.

[0643] The first oxide semiconductor film 108a has a first region in which the atomic ratio of In is larger than the atomic ratio of M. By doing so, the field effect mobility (simply called mobility, or μFE in this case) of the transistor 100 is Specifically, the field effect mobility of the transistor 100 can be increased. 10cm 2 / Vs can be exceeded.

[0644] For example, the above-mentioned high field effect mobility transistor is connected to a gate driver that generates a gate signal. A demultiplexer connected to the output terminal of a shift register of a gate driver (especially By using the semiconductor device or display device in a semiconductor device having a narrow frame (also called a narrow frame), can be provided.

[0645] On the other hand, a first oxide semiconductor having a first region in which the atomic ratio of In is larger than the atomic ratio of M By using the film 108a, the electrical characteristics of the transistor 100 are likely to change when exposed to light. However, in the semiconductor device of one embodiment of the present invention, the first oxide semiconductor film 108 A second oxide semiconductor film 108b is formed on the second oxide semiconductor film 1a. The thickness of the channel region of the first oxide semiconductor film 108b is smaller than the thickness of the first oxide semiconductor film 108a.

[0646] In addition, the second oxide semiconductor film 108b contains more In atoms than the first oxide semiconductor film 108a. Since the second region has a smaller molecular weight ratio, Eg is larger than that of the first oxide semiconductor film 108a. Therefore, the first oxide semiconductor film 108a and the second oxide semiconductor film 108 The oxide semiconductor film 108 having a stacked structure of a and b has a high resistance to a negative bias stress test using light irradiation. It will become more expensive.

[0647] By using the oxide semiconductor film having the above structure, the light absorption of the oxide semiconductor film 108 during light irradiation can be improved. Therefore, the current of the transistor 100 when irradiated with light can be reduced. In addition, in the semiconductor device according to one embodiment of the present invention, Since the insulating film 114 or the insulating film 116 contains excess oxygen, the insulating film 114 or the insulating film 116 is The fluctuation in the electrical characteristics of the transistor 100 can be further suppressed.

[0648] Here, the oxide semiconductor film 108 will be described in detail with reference to FIG.

[0649] FIG. 33B is a cross-sectional view of the transistor 100 shown in FIG. 33C. FIG. 2 is an enlarged cross-sectional view of the vicinity of the film 108.

[0650] In FIG. 33B, the thickness of the first oxide semiconductor film 108a is t1. The thicknesses of the compound semiconductor film 108b are indicated as t2-1 and t2-2, respectively. Since the second oxide semiconductor film 108b is provided over the first oxide semiconductor film 108a, During the formation of the conductive films 112a and 112b, the first oxide semiconductor film 108a is etched. Therefore, the first oxide semiconductor is not exposed to etching gas or etching solution. The thickness of the second oxide film 108a is either not reduced or is very small. In the conductive film 108b, the second oxide The portions of the semiconductor film 108b that do not overlap with the conductive films 112a and 112b are etched to form recesses. That is, the conductive films 112a and 112b of the second oxide semiconductor film 108b are The thickness of the overlapping region is t2-1. The thickness of the region not overlapping with 112b is t2-2.

[0651] The relationship between the thicknesses of the first oxide semiconductor film 108a and the second oxide semiconductor film 108b is t2- It is preferable that t1>t1>t2-2. By making such a film thickness relationship, high A transistor having a high field effect mobility and a small variation in threshold voltage when irradiated with light. It is possible to make it a star.

[0652] In addition, when oxygen vacancies are formed in the oxide semiconductor film 108 of the transistor 100, Therefore, the oxide semiconductor tends to have a normally-on characteristic. To reduce oxygen vacancies in the film 108, particularly in the first oxide semiconductor film 108a. This is also important in obtaining stable transistor characteristics. In the configuration of the transistor, an insulating film on the oxide semiconductor film 108, By introducing excess oxygen into the insulating film 114 and / or the insulating film 116 on the film 108, the insulating Oxygen is transferred from the film 114 and / or the insulating film 116 into the oxide semiconductor film 108, and the oxide Filling oxygen deficiencies in the semiconductor film 108, particularly in the first oxide semiconductor film 108a. It is characterized by this.

[0653] Regarding the insulating films 114 and 116, it is more preferable to have a region containing oxygen in excess of the stoichiometric composition (oxygen-excess region). In other words, the insulating films 114 and 116 are insulating films capable of releasing oxygen. To provide an oxygen-excess region in the insulating films 114 and 116, for example, oxygen is introduced into the insulating films 114 and 116 after film formation to form an oxygen-excess region . As a method for introducing oxygen, an ion implantation method, an ion doping method, a plasma ion merging ion implantation method, plasma treatment, etc. can be used.

[0654] Also, in order to fill oxygen deficiencies in the first oxide semiconductor film 108a, it is preferable to reduce the film thickness near the channel region of the second oxide semiconductor film 108b. Therefore, the relationship t2 - 2 < t1 should be satisfied. For example, the film thickness near the channel region of the second oxide semiconductor film 108b is preferably 1 nm or more and 20 nm or less, more preferably 3 nm or more and 10 nm or less.

[0655] Below, other components included in the semiconductor device of this embodiment will be described in detail.

[0656] 《Substrate》 There are no major restrictions on the material of the substrate 102, etc., but at least it is necessary to have heat resistance to withstand subsequent heat treatment. For example, a glass substrate, a ceramic substrate, a quartz substrate, a sapphire substrate, etc. may be used as the substrate 102. Also, silicon or silicon carbide may be used as the material . ​​​Single crystal semiconductor substrates, polycrystalline semiconductor substrates, and compound semiconductor substrates such as silicon germanium It is also possible to use a substrate, an SOI substrate, or the like, on which a semiconductor element is provided. The substrate 102 may be a glass substrate. In this case, 6th generation (1500mm x 1850mm), 7th generation (1870mm x 2200 mm), 8th generation (2200mm x 2400mm), 9th generation (2400mm x 2800 By using large area substrates such as 10th generation (2950mm x 3400mm), It is possible to fabricate a display device of this type.

[0657] In addition, a flexible substrate is used as the substrate 102, and the transistor 100 is directly formed on the flexible substrate. Alternatively, a peeling layer may be provided between the substrate 102 and the transistor 100. The release layer is used to separate the semiconductor device from the substrate 102 after a part or whole of the semiconductor device is completed thereon. The transistor 100 can be separated and transferred to another substrate. It can also be transferred to less rigid or flexible substrates.

[0658] <Conductive film functioning as gate electrode, source electrode, and drain electrode> The conductive film 104 functions as a gate electrode, and the conductive film 112a functions as a source electrode. The conductive film 112b functioning as the drain electrode is made of chromium (Cr), copper (Cu ), aluminum (Al), gold (Au), silver (Ag), zinc (Zn), molybdenum (Mo ), Tantalum (Ta), Titanium (Ti), Tungsten (W), Manganese (Mn), Ni A metal element selected from nickel (Ni), iron (Fe), and cobalt (Co), or the above-mentioned gold The alloys are made of metal elements or alloys combining the above-mentioned metal elements. It can be achieved.

[0659] The conductive films 104, 112a, and 112b may have a single-layer structure or a laminated structure of two or more layers. For example, a single layer structure of an aluminum film containing silicon, titanium on an aluminum film, A two-layer structure in which a titanium film is laminated on a titanium nitride film, a two-layer structure in which a titanium film is laminated on a titanium nitride film, A two-layer structure in which a tungsten film is laminated on a tantalum nitride film or a tungsten nitride film is laminated on a tantalum nitride film. A two-layer structure in which a titanium film is laminated with an tungsten film, and an aluminum film is laminated on the titanium film. There are three-layer structures, such as a titanium film formed on top of the aluminum film. Selected from the group consisting of tantalum, tungsten, molybdenum, chromium, neodymium, and scandium. Alternatively, an alloy film or a nitride film made by combining one or more of these may be used.

[0660] The conductive films 104, 112a, and 112b are made of indium tin oxide or tungsten oxide. Indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, titanium oxide Indium oxide, titanium oxide, indium tin oxide, indium zinc oxide, By using a conductive material having light transmission properties such as indium tin oxide with added silicon oxide, It is also possible.

[0661] The conductive films 104, 112a, and 112b are made of a Cu-X alloy film (X is Mn, Ni, C r, Fe, Co, Mo, Ta, or Ti) may be applied. This allows processing using a wet etching process, which reduces manufacturing costs. It becomes Noh.

[0662] <Insulating film that functions as a gate insulating film> The insulating films 106 and 107 functioning as the gate insulating film of the transistor 100 are made of a polysilicon. Plasma Enhanced Chemical Vapor Deposition (PECVD) Silicon oxide is formed by vapor deposition (Vapor Deposition) or sputtering. film, silicon oxynitride film, silicon nitride oxide film, silicon nitride film, aluminum oxide film, Hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film tantalum film, magnesium oxide film, lanthanum oxide film, cerium oxide film and neodymium oxide film The insulating films 106 and 107 may each contain one or more of the following: A single-layer insulating film selected from the above materials or an insulating film having three or more layers is used instead of a laminated structure. It may be used.

[0663] The insulating film 106 also functions as a blocking film that suppresses oxygen permeation. For example, excess oxygen may be present in the insulating films 107, 114, and 116 and / or the oxide semiconductor film 108. In the case where oxygen is supplied, the insulating film 106 can suppress oxygen permeation.

[0664] Note that the oxide semiconductor film 108 functioning as a channel region of the transistor 100 The insulating film 107 is preferably an oxide insulating film having a stoichiometric composition and a It is more preferable that the insulating film 10 has a region containing oxygen (an oxygen excess region). The insulating film 107 is capable of releasing oxygen. In order to provide the insulating film 107, for example, the insulating film 107 may be formed in an oxygen atmosphere. Oxygen may be introduced into the insulating film 107 to form an oxygen excess region. The following methods are used: ion implantation, ion doping, plasma immersion ion implantation, plasma Processing such as masking can be used.

[0665] Furthermore, when hafnium oxide is used as the insulating film 107, the following effects are obtained. Fused silicon has a higher dielectric constant than silicon oxide and silicon oxynitride. Since the film thickness can be made larger than that of silicon nitride, the leakage current due to tunneling current is reduced. In other words, it is possible to realize a transistor with a small off-state current. Furthermore, hafnium oxide having a crystalline structure can be easily formed. Therefore, it is a transistor with a small off-state current. For this purpose, it is preferable to use hafnium oxide having a crystalline structure. Examples of the crystal system include monoclinic and cubic crystal systems. However, one embodiment of the present invention is not limited to these. Not done.

[0666] In this embodiment, a silicon nitride film is formed as the insulating film 106, and a silicon nitride film is formed as the insulating film 107. The silicon nitride film has a lower dielectric constant than the silicon oxide film. The thickness required to obtain the same capacitance as a silicon oxide film is large, so The gate insulating film of ST100 contains a silicon nitride film, which physically thickens the insulating film. Therefore, the decrease in the dielectric strength voltage of the transistor 100 can be suppressed, and the dielectric strength By improving the withstand voltage, electrostatic damage to the transistor 100 can be suppressed.

[0667] <Oxide semiconductor film> For the oxide semiconductor film 108, the above-mentioned materials can be used.

[0668] When the oxide semiconductor film 108 is an In-M-Zn oxide, the In-M-Zn oxide is deposited. The atomic ratio of the metal elements in the sputtering target used for this purpose is In≧M, Zn≧M. It is preferable that the atomic ratio of the metal elements in such a sputtering target is In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In:M:Zn= 2:1:3, In:M:Zn=3:1:2, In:M:Zn=4:2:4.1 are preferred .

[0669] In addition, when the oxide semiconductor film 108 is an In-M-Zn oxide, a sputtering target It is preferable to use a target containing polycrystalline In-M-Zn oxide. By using a target containing the In-M-Zn oxide, a crystalline oxide semiconductor can be obtained. The atomic ratio of the oxide semiconductor film 108 to be formed is The atomic ratio of the metal elements contained in the sputtering target is included as an error. For example, as a sputtering target, the atomic ratio is When In:Ga:Zn=4:2:4.1 is used, the raw material of the oxide semiconductor film 108 is The atomic ratio may be approximately In:Ga:Zn=4:2:3.

[0670] For example, the first oxide semiconductor film 108a may be formed using the above-mentioned In:M:Zn=2:1:3 composition. Sputtering targets such as In:M:Zn=3:1:2 and In:M:Zn=4:2:4.1 The second oxide semiconductor film 108b may be formed using the above-mentioned It may be formed by using In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, etc. Yes. Note that, as for the metal element of the sputtering target used for the second oxide semiconductor film 108b the atomic ratio does not necessarily need to satisfy In≧M and Zn≧M, and a composition satisfying In≧M and Zn<M may be used. Specifically, examples include In:M:Zn = 1:3:2.

[0671] Further, the oxide semiconductor film 108 has an energy gap of 2 eV or more, preferably 2.5 eV or more, and more preferably 3 eV or more. By using such an oxide semiconductor with a wide energy gap, the off-current of the transistor 100 can be reduced. In particular, for the first oxide semiconductor film 108a, an oxide semiconductor film having an energy gap of 2 eV or more, preferably 2 eV or more and 3.0 eV or less is used, and for the second oxide semiconductor film 108b, using an oxide semiconductor film having an energy gap of 2.5 eV or more and 3.5 eV or less is preferred. Also, it is preferable that the energy gap of the second oxide semiconductor film 108b is larger than that of the first oxide semiconductor film 108a.

[0672] Further, the thicknesses of the first oxide semiconductor film 108a and the second oxide semiconductor film 108b are each 3 nm or more and 200 nm or less, preferably 3 nm or more and 100 nm or less, and more preferably 3 nm or more and 50 nm or less. Note that it is preferable to satisfy the relationship of the film thickness described above.

[0673] Further, as the second oxide semiconductor film 108b, an oxide semiconductor film with a low carrier density is used. For example, the second oxide semiconductor film 108b has a carrier density of 1×10 17 / cm 3 or less, preferably 1×10 15 / cm 3 or less, and more preferably 1×10 13 / cm3 Below or less, more preferably 1×10 11 / cm 3 The following applies.

[0674] In addition, the semiconductor characteristics and electrical characteristics (field effect The appropriate composition should be used depending on the required properties (mobility, threshold voltage, etc.). In order to obtain semiconductor characteristics of a transistor, the first oxide semiconductor film 108a and the second oxide The carrier density, impurity concentration, defect density, number of metal elements and oxygen atoms of the nitride semiconductor film 108b It is preferable to set the ratio, interatomic distance, density, etc. appropriately.

[0675] Note that the first oxide semiconductor film 108a and the second oxide semiconductor film 108b are By using an oxide semiconductor film having a low impurity concentration and a low density of defect states, In this embodiment, a transistor having excellent electrical characteristics can be fabricated. The term "high purity intrinsic or substantially high purity" refers to a material with a low oxygen vacancy rate and a low defect level density (low oxygen vacancy). A highly pure intrinsic or substantially highly pure intrinsic oxide semiconductor film is called a highly pure intrinsic oxide semiconductor film. Since the source of oxygen generation is small, the carrier density can be reduced. A transistor in which a channel region is formed in a film has electrical characteristics in which the threshold voltage is negative. (also called normally-on). Since the purity of the intrinsic oxide semiconductor film is low, the density of defect states is also low. In addition, a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film may be formed by The current is extremely small, and the channel width is 1×10 6 μm and the channel length L is 10 μm. However, the voltage between the source and drain electrodes (drain voltage) is in the range of 1V to 10V. The off-state current is below the measurement limit of the semiconductor parameter analyzer, that is, 1×10 -13 It is possible to obtain a characteristic of A or less.

[0676] Therefore, the high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor film has a channel region. The transistors in which this region is formed have small fluctuations in electrical characteristics and are highly reliable. Note that charges trapped in the trap states of the oxide semiconductor film can be dissipated. It takes a long time for the charge to reach the target, and it may behave as if it were a fixed charge. A transistor in which a channel region is formed in an oxide semiconductor film with a high density of trap states has The characteristics may become unstable. Impurities include hydrogen, nitrogen, alkali metals, or arsenic. Alkaline earth metals, etc.

[0677] Hydrogen contained in the oxide semiconductor film reacts with oxygen that is bonded to metal atoms to become water. Oxygen vacancies are formed in the lattice from which oxygen has been removed (or in the portion from which oxygen has been removed). When hydrogen enters, electrons, which act as carriers, may be generated. Also, some of the hydrogen may be converted to gold. It can combine with oxygen, which is a carrier of electrons, to produce a A transistor using an oxide semiconductor film containing hydrogen is likely to be normally on. For this reason, it is preferable that the amount of hydrogen in the oxide semiconductor film 108 be reduced as much as possible. Specifically, the hydrogen concentration in the oxide semiconductor film 108 obtained by SIMS analysis is 2 × 10 20 atoms / cm 3 Less than or equal to 5×10 19 atoms / cm 3 Less than or equal to 1×10 19 atoms / cm 3 Less than or equal to 5×10 1 8 atoms / cm 3 Less than or equal to 1×10 18 atoms / cm 3 More details below. Preferably 5 x 10 17 atoms / cm 3 Less than 1×10, more preferably 16 ato ms / cm 3 The following applies.

[0678] The first oxide semiconductor film 108a has a higher hydrogen concentration than the second oxide semiconductor film 108b. It is preferable that the first oxide semiconductor film 108a has a portion in which the second oxide semiconductor film 108b is thin. By having a portion with a lower hydrogen concentration than the semiconductor film 108b, a highly reliable semiconductor device can be obtained. It can be placed.

[0679] In addition, the first oxide semiconductor film 108a contains silicon and carbon, which are group 14 elements. When the first oxide semiconductor film 108a contains the fluorine atom, oxygen vacancies are increased in the first oxide semiconductor film 108a, and the first oxide semiconductor film 108a becomes an n-type oxide semiconductor. Therefore, the concentrations of silicon and carbon in the first oxide semiconductor film 108a and the The concentrations of silicon and carbon in the vicinity of the interface with the oxide semiconductor film 108a (obtained by SIMS analysis) The concentration at which the 18 atoms / cm 3 Less than or equal to 2×10 17 ato ms / cm 3 The following applies.

[0680] In addition, in the first oxide semiconductor film 108a, an alkali metal oxide film obtained by SIMS analysis The concentration of alkaline earth metals is 1×1018 atoms / cm 3 Hereinafter, preferably 2×10 16 atoms / cm 3 The alkali metals and alkaline earth metals are When they bond with oxide semiconductors, carriers may be generated, increasing the off-state current of the transistor. For this reason, the alkali metal or It is preferable to reduce the concentration of alkaline earth metals.

[0681] When the first oxide semiconductor film 108a contains nitrogen, electrons that serve as carriers are generated. This increases the carrier density and makes it easier to convert to n-type. A transistor using the oxide semiconductor film tends to have normally-on characteristics. It is preferable that the nitrogen content in the film is reduced as much as possible. For example, The resulting nitrogen concentration is 5×10 18 atoms / cm 3 It is preferable to do the following:

[0682] The first oxide semiconductor film 108a and the second oxide semiconductor film 108b are The non-single crystal structure may be, for example, CAAC-OS (C Axis s Aligned Crystalline Oxide Semiconductor r), polycrystalline, microcrystalline, or amorphous structures. The lattice structure has the highest density of defect states, while the CAAC-OS has the lowest density of defect states.

[0683] <An insulating film that functions as a protective insulating film for transistors> The insulating films 114 and 116 have a function of supplying oxygen to the oxide semiconductor film 108. The insulating film 118 functions as a protective insulating film for the transistor 100. The insulating film 114 and 116 contain oxygen. The insulating film 114 is an insulating film. The insulating film 114 is formed by oxidizing the insulating film 116 to be formed later. It also functions as a film for reducing damage to the semiconductor film 108 .

[0684] The insulating film 114 has a thickness of 5 nm to 150 nm, preferably 5 nm to 50 nm. Silicon oxide, silicon oxynitride, etc. having a thickness of m or less can be used.

[0685] In addition, it is preferable that the insulating film 114 has a small number of defects. Typically, the insulating film 114 has a small number of defects as determined by ESR measurement. , the spin density of the signal at g=2.001 originating from silicon dangling bonds is 3×10 17 spins / cm 3 This is because the insulating film 114 contains If the density of defects is high, oxygen will be bonded to the defects, and the amount of oxygen in the insulating film 114 will increase. The amount of transmission decreases.

[0686] In addition, in the insulating film 114, all of the oxygen that has entered the insulating film 114 from the outside is Some oxygen does not move to the outside and remains in the insulating film 114. At the same time, oxygen contained in the insulating film 114 moves to the outside of the insulating film 114, In some cases, oxygen may move through the insulating film 114. When the oxide insulating film 116 is formed, the insulating film 114 is provided with a high insulating property. The released oxygen can be transferred to the oxide semiconductor film 108 through the insulating film 114.

[0687] The insulating film 114 is formed using an oxide insulating film having a low density of states caused by nitrogen oxides. Note that the density of states caused by the nitrogen oxides can be determined by the valence charge of the oxide semiconductor film. The upper edge of the electron band (Ev_os) and the lower edge of the conduction band of the oxide semiconductor film ( The oxide insulating film may be formed between the gate and the gate electrodes of the semiconductor substrate. Silicon oxynitride film with low emission or aluminum oxynitride film with low emission of nitrogen oxides A film such as a gypsum film can be used.

[0688] In addition, a silicon oxynitride film that emits a small amount of nitrogen oxides is This is a membrane that releases more ammonia than nitrogen oxides, and is typically The emission amount is 1×10 18 / cm 3 5×10 or more 19 / cm 3 The following is ammonia. The amount of release is determined when the surface temperature of the film is 50°C or higher and 650°C or lower, preferably 50°C or higher and 550°C or lower. This is the amount released by the heat treatment below.

[0689] Nitrogen oxides (NO x , x is greater than 0 and less than or equal to 2, preferably greater than or equal to 1 and less than or equal to 2), typically NO 2 Alternatively, NO forms a level in the insulating film 114 or the like. Therefore, the nitrogen oxide is located in the energy gap of the insulating film 114 and When the oxide semiconductor film 108 diffuses to the interface, the level traps electrons on the insulating film 114 side. As a result, the trapped electrons may wrap around the insulating film 114 and the oxide semiconductor. Since the ions remain near the interface with the semiconductor film 108, the threshold voltage of the transistor is shifted in the positive direction. It will cause.

[0690] Nitrogen oxide reacts with ammonia and oxygen during heat treatment. The nitrogen oxide contained therein reacts with ammonia contained in the insulating film 116 during heat treatment. Therefore, nitrogen oxides contained in the insulating film 114 are reduced. Electrons are less likely to be trapped at the interface with the oxide semiconductor film 108.

[0691] By using the oxide insulating film as the insulating film 114, the threshold voltage of the transistor can be reduced. It is possible to reduce the shift and the variation in the electrical characteristics of the transistor. Cut.

[0692] Heat treatment in the manufacturing process of a transistor is typically performed at 300° C. or higher and lower than 350° C. As a result of the treatment, the insulating film 114 exhibits the following characteristics in the spectrum obtained by ESR measurement at 100K or less: The first signal has a g value of 2.037 to 2.039, and the second signal has a g value of 2.001 to 2. A second signal with a g value of 0.003 or less, and a third signal with a g value of 1.964 to 1.966 or less. The split width of the first signal and the second signal, and the The split width of the first signal and the third signal is about 5 m in the X-band ESR measurement. T. The first signal has a g value of 2.037 or more and 2.039 or less, and the second signal has a g value of 2.0 A second signal with a g value between 1.01 and 2.003, and a second signal with a g value between 1.964 and 1.966, The total spin density of a third signal is 1×10 18 spins / cm 3 Less than , typically 1×10 17 spins / cm 3 More than 1×10 18 spins / cm 3 less than It is.

[0693] In addition, in the ESR spectrum below 100K, the g value is 2.037 to 2.039. The first signal, the second signal with a g value between 2.001 and 2.003, and the g value between 1. The third signal, between 964 and 1.966, is nitrogen oxide (NO x , x is greater than 0 2 or less, preferably 1 to 2). Representative examples of nitrogen oxides include Examples of nitrogen oxide include nitrogen monoxide and nitrogen dioxide. A first signal, a second signal with a g value of 2.001 to 2.003, and a g value of 1 The lower the sum of the spin densities of the third signals, which are between .964 and 1.966, the It can be said that the content of nitrogen oxide in the oxide insulating film is small.

[0694] The nitrogen concentration of the oxide insulating film measured by SIMS is 6×10 20 atoms / cm 3 The following is the result.

[0695] The surface temperature of the membrane is 220℃ or more and 350℃ or less, and the PE using silane and nitrous oxide is By forming the oxide insulating film using the CVD method, a dense and hard film can be obtained. can be formed.

[0696] The insulating film 116 is an oxide insulating film containing more oxygen than the oxygen required for the stoichiometric composition. The oxide insulating film containing more oxygen than the stoichiometric composition is formed by heating. Heat causes some of the oxygen to be released. Acids that contain more oxygen than is required for the stoichiometric composition The oxide insulating film had a desorption of 1.0×10 oxygen atoms in terms of oxygen atoms, as determined by TDS analysis. 19 atoms / cm 3 More than 3.0×10 20 atoms / cm 3 Acid that is greater than or equal to The surface temperature of the film in the above TDS is 100°C or higher and 700°C or higher. °C or lower, or in the range of 100°C to 500°C.

[0697] The insulating film 116 has a thickness of 30 nm to 500 nm, preferably 50 nm to 400 nm. Silicon oxide, silicon oxynitride, etc. having a thickness of 00 nm or less can be used.

[0698] In addition, it is preferable that the insulating film 116 has a small amount of defects. Typically, the insulating film 116 has a small amount of defects as determined by ESR measurement. , the spin density of the signal at g=2.001 originating from silicon dangling bonds is 1.5×10 18 spins / cm 3 Less than or even 1×10 18 spins / cm 3 Below Note that the insulating film 116 is preferably made of an oxide semiconductor material as compared with the insulating film 114. Since it is separated from the film 108 , it may have a higher defect density than the insulating film 114 .

[0699] In addition, the insulating films 114 and 116 can be made of the same material. In some cases, the interface between the insulating film 114 and the insulating film 116 cannot be clearly seen. In this embodiment, the interface between the insulating film 114 and the insulating film 116 is shown by a dashed line. In the embodiment, the two-layer structure of the insulating film 114 and the insulating film 116 has been described. For example, the insulating film 114 may have a single-layer structure.

[0700] The insulating film 118 contains nitrogen. The insulating film 118 also contains nitrogen and silicon. In addition, the insulating film 118 is a blocking agent for oxygen, hydrogen, water, alkali metals, alkaline earth metals, etc. The insulating film 118 prevents oxygen from the oxide semiconductor film 108. The diffusion of oxygen from the insulating films 114 and 116 to the outside, and the diffusion of oxygen from the outside The insulating film 118 can prevent hydrogen, water, etc. from entering the compound semiconductor film 108. For example, a nitride insulating film can be used. Silicon oxide nitride, aluminum nitride, aluminum oxide nitride, etc. Nitride insulation with blocking effect for hydrogen, water, alkali metals, alkaline earth metals, etc. Instead of the insulating film, an oxide insulating film having a blocking effect against oxygen, hydrogen, water, etc. may be provided. As an oxide insulating film having a blocking effect against oxygen, hydrogen, water, etc., aluminum oxide is used. Aluminum, aluminum oxide nitride, gallium oxide, gallium oxide nitride, yttrium oxide, Examples include yttrium nitride oxide, hafnium oxide, and hafnium oxynitride.

[0701] Note that the various films such as the conductive film, the insulating film, and the oxide semiconductor film described above are formed by sputtering. It can be formed by the PECVD method, but other methods such as thermal CVD (Chemical CVD) are also possible. Alternatively, the insulating layer may be formed by a thermal CVD method. As an example, MOCVD (Metal Organic Chemical Vapor Deposition) Deposition) method and ALD (Atomic Layer Deposition) ) method may also be used.

[0702] Thermal CVD is a film formation method that does not use plasma, so defects can occur due to plasma damage. This has the advantage that the

[0703] In the thermal CVD method, the source gas and the oxidizing agent are fed into the chamber at the same time, and the pressure inside the chamber is raised to atmospheric pressure. The film is formed by reacting the reactants near or on the substrate under reduced pressure and depositing them on the substrate. It is also possible.

[0704] In addition, in the ALD method, the pressure inside the chamber is set to atmospheric pressure or reduced pressure, and the source gas for the reaction is sequentially The gas may be introduced into the next chamber, and the gas introduction sequence may be repeated to form a film. For example, two or more types of valves can be switched by switching each valve (also called high-speed valves). The source gases are supplied to the chamber in order, and the first source gas is supplied to the chamber in order to prevent the mixture of the source gases. An inert gas (argon, nitrogen, etc.) is introduced simultaneously with or after the gas, and the second When an inert gas is introduced at the same time, the inert gas is used as a carrier gas. The inert gas may be introduced at the same time as the second source gas is introduced. Also, instead of introducing an inert gas, the first source gas is discharged by evacuation, and then A second source gas may be introduced. The first source gas is adsorbed on the surface of the substrate to form a first layer. The first layer is then deposited on the second layer, which reacts with the second source gas introduced later. This process is repeated several times while controlling the gas introduction sequence until a thin film of the desired thickness is formed. By doing so, a thin film with excellent step coverage can be formed. The thickness of the thin film is determined by the order of gas introduction. The number of times the process is repeated can be adjusted, allowing precise film thickness control. This is suitable for fabricating FETs with high

[0705] Thermal CVD methods such as MOCVD and ALD can be used to form the conductive film, insulating film, and oxide semiconductor of the above-mentioned embodiment. It is possible to form various films such as conductor films and metal oxide films. For example, In-Ga-ZnO When forming a film, trimethylindium, trimethylgallium, and dimethylzinc are used. The chemical formula for trimethylindium is In(CH 3 ) 3 Also, The chemical formula for trimethylgallium is Ga(CH 3 ) 3 The chemical formula for dimethylzinc is , Zn(CH 3 ) 2 In addition, the combination is not limited to these, and trimethylgallium is also usable. Instead of gallium, triethylgallium (chemical formula Ga(C 2 H 5 ) 3 ) can also be used, Diethyl zinc (chemical formula Zn(C 2 H 5 ) 2 ) can also be used.

[0706] For example, when forming a hafnium oxide film using a deposition system that uses ALD, the solvent and Liquids containing hafnium precursor compounds (hafnium alkoxides, tetrakisdimethylamine, etc.) The raw material gas is vaporized hafnium amide (TDMAH, etc.) and oxidized As an agent, ozone (O 3 Two types of gases are used: tetrakisdimethylamide hafnium The chemical formula for nium is Hf[N(CH 3 ) 2 ] 4 In addition, other material liquids include tetrahydrofuran. Examples include kis(ethylmethylamido)hafnium.

[0707] For example, when forming an aluminum oxide film using a film forming apparatus that uses ALD, a solvent and a liquid containing an aluminum precursor compound (e.g., trimethylaluminum (TMA)) The raw gas is oxidized and H 2 Two types of gases are used: trimethylammonia, trimethylphenylacetone, and trimethylphenylacetone. The chemical formula for aluminum is Al(CH 3 ) 3 Other liquid materials include Tris(diisopropyl alcohol, Methylamido)aluminum, triisobutylaluminum, aluminum tris(2, 2,6,6-tetramethyl-3,5-heptanedionate).

[0708] For example, when forming a silicon oxide film using a deposition system that uses ALD, The chlorine contained in the adsorbed material is removed, and the oxidizing gas (O 2 , nitrous oxide) radicals are supplied to react with the adsorbate.

[0709] For example, when forming a tungsten film using a deposition system that uses ALD, the WF 6 G S and B 2 H 6 The gases are introduced repeatedly in sequence to form an initial tungsten film, and then WF 6 Gas and H 2 A tungsten film is formed using gas. 2 H 6 Instead of gas, SiH 4 A gas may also be used.

[0710] For example, an oxide semiconductor film, such as an In-Ga-ZnO film, can be formed by a film forming apparatus using ALD. When depositing a film of In(CH 3 ) 3 Gas and O 3 Gases were introduced repeatedly to obtain In-O layer, and then Ga(CH 3 ) 3 Gas and O3 A GaO layer is formed using a gas, and Then Zn(CH 3 ) 2 Gas and O 3 The ZnO layer is formed using a gas. The order of is not limited to this example. In addition, by mixing these gases, In-Ga-O layers and In-Zn A mixed compound layer such as a Ga-Zn-O layer or a Ga-Zn-O layer may be formed. 3 Change to gas The H obtained by bubbling an inert gas such as Ar 2 O gas may be used, but it does not contain H. No 3 It is preferable to use In(CH 3 ) 3 Instead of gas, In(C 2 H 5 ) 3 Gas may also be used. 3 ) 3 Instead of gas, Ga(C 2 H 5 ) 3 Gas may also be used. 3 ) 2 A gas may also be used.

[0711] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification. .

[0712] (Embodiment 8) In this embodiment, a transistor that can be used as an input device or an input / output device according to one embodiment of the present invention will be described. The configuration of the transistor will be described with reference to FIG.

[0713] <Example of semiconductor device configuration> FIG. 34A is a top view of a transistor 100, and FIG. 34B is a top view of the transistor 100 shown in FIG. FIG. 34(C) corresponds to a cross-sectional view taken along the line X1-X2 shown in FIG. 34(A). 34(A) corresponds to a cross-sectional view taken along line Y1-Y2 in FIG. In order to avoid complication, some of the components of the transistor 100 (gate insulator) are In addition, the direction of the cutting line X1-X2 is The channel length direction and the cutting line Y1-Y2 direction may be referred to as the channel width direction. In the top view of the transistor, the constituent elements are shown in the following drawings as in FIG. In some cases, some elements may be omitted in the illustration.

[0714] Note that the transistor 100 can be used in the input / output device described in Embodiment 6. Cut.

[0715] For example, when the transistor 100 is used as the transistor MD, the substrate 102 is In FIG. 01C, the conductive film 104 is replaced with the conductive film 704, and the insulating film 106 and the insulating film 107 are replaced with a laminated film. The insulating film 706 is formed on the insulating film 706, the oxide semiconductor film 108 is formed on the semiconductor film 708, and the conductive film 112a is formed on the conductive film 7 12A, the conductive film 112b is laminated to the conductive film 712B, and the insulating film 114 and the insulating film 116 are laminated. The insulating film 118 is formed as an insulating film 721B, and the conductive film 120b is formed as a conductive film 724. can be read as follows, respectively.

[0716] The transistor 100 includes a conductive film 104 that functions as a first gate electrode over a substrate 102 and a an insulating film 106 on the substrate 102 and the conductive film 104; an insulating film 107 on the insulating film 106; The oxide semiconductor film 108 over the insulating film 107 and a The conductive film 112a serving as a source electrode and the oxide semiconductor film 108 The conductive film 112b functions as a drain electrode, and the oxide semiconductor film 108 and the conductive film 112 a and 112b, and a conductive film a conductive film 120a electrically connected to the insulating film 112b; and a conductive film 120b on the insulating film 116. The insulating film 116 and the insulating film 118 on the conductive films 120a and 120b are provided.

[0717] In the transistor 100, the insulating films 106 and 107 are The insulating films 114 and 116 function as gate insulating films of the transistor 100. The insulating film 118 functions as a second gate insulating film and serves as a protective insulating film for the transistor 100. In this specification, the insulating films 106 and 107 are referred to as the first insulating film. The insulating film, the insulating films 114 and 116 are referred to as a second insulating film, the insulating film 118 is referred to as a third insulating film, and These may be referred to separately.

[0718] Note that the conductive film 120b can be used as a second gate electrode of the transistor 100.

[0719] In addition, when the transistor 100 is used in a pixel portion of a display panel, the conductive film 120a is It can be used for electrodes of elements, etc.

[0720] In addition, the oxide semiconductor film 108 is formed by oxidizing the conductive film 104 functioning as the first gate electrode. and an oxide semiconductor film 108c on the oxide semiconductor film 108b. The oxide semiconductor film 108b and the oxide semiconductor film 108c are each composed of In and M (M is A). l, Ga, Y, or Sn) and Zn.

[0721] For example, in the oxide semiconductor film 108b, a region in which the atomic ratio of In is larger than the atomic ratio of M is The oxide semiconductor film 108c preferably has the following structure: It is preferable that the number of In atoms is smaller than that of the In-type semiconductor layer.

[0722] The oxide semiconductor film 108b has a region in which the atomic ratio of In is higher than the atomic ratio of M. , the field effect mobility (sometimes simply referred to as mobility, or μFE) of the transistor 100 Specifically, the field effect mobility of the transistor 100 can be increased to 10 cm 2 / Vs, and more preferably the field effect mobility of the transistor 100 is greater than 30 cm 2 / Vs can be exceeded.

[0723] For example, the above-mentioned high field effect mobility transistor is connected to a gate driver that generates a gate signal. A demultiplexer connected to the output terminal of a shift register of a gate driver (especially By using the semiconductor device or display device in a semiconductor device having a narrow frame (also called a narrow frame), can be provided.

[0724] On the other hand, the oxide semiconductor film 108b has a region in which the atomic ratio of In is higher than the atomic ratio of M. In this case, the electrical characteristics of the transistor 100 are likely to change when exposed to light. In the semiconductor device of one embodiment of the present invention, an oxide semiconductor film 108 is formed on the oxide semiconductor film 108b. The oxide semiconductor film 108c is formed on the oxide semiconductor film 108b. Since the oxide semiconductor film 108b has a region having a lower atomic ratio of In than the oxide semiconductor film 108b, the oxide semiconductor film 108b has a larger Eg than the oxide semiconductor film 108b. Therefore, the stacked structure of the oxide semiconductor film 108b and the oxide semiconductor film 108c The oxide semiconductor film 108 having this structure can improve resistance to a negative bias stress test using light. It becomes possible.

[0725] In addition, the oxide semiconductor film 108, particularly the channel region of the oxide semiconductor film 108b, Impurities such as hydrogen and moisture are problematic because they affect transistor characteristics. Therefore, impurities such as hydrogen or moisture are present in the channel region of the oxide semiconductor film 108b. The less impurities there are, the more preferable. The oxygen vacancies caused by the oxygen vacancies affect the transistor characteristics and are therefore problematic. When oxygen vacancies are formed in the channel region of the film 108b, hydrogen bonds to the oxygen vacancies, forming A carrier supply source is generated in the channel region of the oxide semiconductor film 108b. As a result, the electrical characteristics of the transistor 100 including the oxide semiconductor film 108b change, typically Therefore, the threshold voltage of the oxide semiconductor film 108b is shifted. In the region, the fewer the oxygen deficiencies, the more preferable.

[0726] In view of this, in one embodiment of the present invention, an insulating film in contact with the oxide semiconductor film 108, specifically, , the insulating film 107 formed under the oxide semiconductor film 108 and the oxide semiconductor film 108 The insulating films 114 and 116 formed above contain excess oxygen. and oxygen or excess oxygen is transferred from the insulating films 114 and 116 to the oxide semiconductor film 108. By this, oxygen vacancies in the oxide semiconductor film can be reduced. Suppresses the fluctuation of the electrical characteristics of the transistor 100, particularly the electrical characteristics of the transistor 100 under light irradiation. It becomes possible to do so.

[0727] In one embodiment of the present invention, the insulating film 107 and the insulating films 114 and 116 are each formed of an oxide film. In order to incorporate the above, there is no increase in the manufacturing process or the increase in the manufacturing process is extremely small. Therefore, the yield of the transistor 100 can be increased.

[0728] Specifically, in the step of forming the oxide semiconductor film 108b, a sputtering method is used. The oxide semiconductor film 108b is formed in an atmosphere containing oxygen gas. Oxygen or excess oxygen is added to the insulating film 107, which is to be the surface on which the film 108b is to be formed.

[0729] In addition, in the process of forming the conductive films 120a and 120b, a sputtering method is used. The conductive films 120a and 120b are formed in an atmosphere containing a nitrogen gas. Oxygen or excess oxygen is added to the insulating film 116, which is the surface on which the insulating film 120b is to be formed. When oxygen or excess oxygen is added to the film 116, the insulating film 1 located below the insulating film 116 Oxygen or excess oxygen may be added to the oxide semiconductor film 14 and the oxide semiconductor film 108 in some cases.

[0730] <Oxide conductor> Next, the oxide conductor will be described. The conductive films 120a and 120b serve as protective films that suppress the release of oxygen from the insulating films 114 and 116. The conductive films 120a and 120b function as a film in the step of forming the insulating film 118. Before the step of forming the insulating film 118, the insulating film 118 functions as a semiconductor. The conductive films 120a and 120b function as conductors.

[0731] In order for the conductive films 120a and 120b to function as conductors, b, and hydrogen is added to the oxygen vacancy from the insulating film 118. As a result, the conductive films 120a and 120b become highly conductive. The conductive films 120a and 120b that have been made conductive are each called oxide conductors. In general, oxide semiconductors have a large energy gap and are therefore highly resistant to visible light. On the other hand, an oxide conductor is an oxide semiconductor having a donor level near the conduction band. Therefore, the oxide conductor is less affected by absorption due to donor levels and The light-transmitting property of the oxide semiconductor is comparable to that of an oxide semiconductor.

[0732] <Components of Semiconductor Device> The components included in the semiconductor device of this embodiment will be described in detail below.

[0733] The following materials are the same as those described in the seventh embodiment. It is possible.

[0734] The material usable for the substrate 102 described in the seventh embodiment is used for the substrate 102. In addition, it can be used for the insulating films 106 and 107 described in the seventh embodiment. The insulating films 106 and 107 can be made of a material that can achieve this.

[0735] In addition, the gate electrode, source electrode, and drain electrode described in the seventh embodiment are The materials that can be used for the functional conductive film are used for the first gate electrode, the source electrode, and the drain electrode. It can be used for a conductive film that functions as an inner electrode.

[0736] <Oxide semiconductor film> For the oxide semiconductor film 108, the above-mentioned materials can be used.

[0737] In the case where the oxide semiconductor film 108b is an In-M-Zn oxide, the In-M-Zn oxide is deposited. The atomic ratio of the metal elements in the sputtering target used for this purpose must satisfy the following: In>M. The atomic ratio of the metal elements in such a sputtering target is preferably In. :M:Zn=2:1:3, In:M:Zn=3:1:2, In:M:Zn=4:2:4. 1 etc.

[0738] In addition, when the oxide semiconductor film 108c is an In-M-Zn oxide, The atomic ratio of the metal elements in the sputtering target used for film formation satisfies In≦M. It is preferable that the atomic ratio of the metal elements in such a sputtering target is , In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=1 :3:2, In:M:Zn=1:3:4, In:M:Zn=1:3:6, etc. .

[0739] When the oxide semiconductor film 108b and the oxide semiconductor film 108c are In-M-Zn oxide, In this case, the sputtering target is a target containing polycrystalline In-M-Zn oxide. It is preferable to use a target containing polycrystalline In-M-Zn oxide. Therefore, the oxide semiconductor film 108b and the oxide semiconductor film 108c having crystallinity can be easily formed. Note that the atomic ratio of the oxide semiconductor film 108b to the oxide semiconductor film 108c to be formed is The error is the atomic ratio of the metal elements contained in the sputtering target. For example, the oxide semiconductor film 108b is sputtered. When the atomic ratio of In:Ga:Zn=4:2:4.1 is used as the target, the film is formed. When the atomic ratio of the oxide semiconductor film 108b is approximately In:Ga:Zn=4:2:3, There is a match.

[0740] The oxide semiconductor film 108 has an energy gap of 2 eV or more, preferably 2.5 eV or more. V or more, and more preferably 3 eV or more. By using a compound semiconductor, the off-state current of the transistor 100 can be reduced. In addition, the oxide semiconductor film 108b has an energy gap of 2 eV or more, preferably 2 eV or more. The oxide semiconductor film 108c has an energy It is preferable to use an oxide semiconductor film having a gap of 2.5 eV or more and 3.5 eV or less. In addition, the energy gap of the oxide semiconductor film 108c is larger than that of the oxide semiconductor film 108b. It is preferable to do so.

[0741] The oxide semiconductor film 108b and the oxide semiconductor film 108c each have a thickness of 3 nm. More preferably, the thickness is 3 nm or less, and more preferably, the thickness is 200 nm or less, more ... The upper limit is 50 nm.

[0742] As the oxide semiconductor film 108c, an oxide semiconductor film with low carrier density is used. For example, the oxide semiconductor film 108c has a carrier density of 1×10 17 / cm 3 The following is preferred: 1×10 15 / cm 3 Less than 1×10, more preferably 13 / cm 3 The following is more preferred: Or 1×10 11 / cm 3 The following applies.

[0743] In addition, the semiconductor characteristics and electrical characteristics (field effect The appropriate composition should be used depending on the required properties (mobility, threshold voltage, etc.). In order to obtain semiconductor characteristics of the transistor, the oxide semiconductor film 108b and the oxide semiconductor film Carrier density, impurity concentration, defect density, atomic ratio of metal elements to oxygen, interatomic distance of 108c It is preferable to make the spacing, density, etc. appropriate.

[0744] Note that the oxide semiconductor films 108b and 108c each contain an impurity By using an oxide semiconductor film with a low concentration and a low density of defect states, the electrical properties are improved. In this embodiment, the impurity concentration is low and the defect A low density of oxygen vacancies (low oxygen vacancies) is called high purity intrinsic or substantially high purity intrinsic. A highly-purified intrinsic or substantially highly-purified intrinsic oxide semiconductor film has a small carrier generation source. Therefore, the carrier density can be reduced. The transistor in which the region is formed has electrical characteristics in which the threshold voltage is negative (normal Also, it is rare for the ion to turn on. Since the oxide semiconductor film has a low density of defect states, the density of trap states may also be low. In addition, a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has a significantly low off-state current. Very small, with a channel width of 1×10 6 Even if the element has a channel length L of 10 μm, When the voltage between the source and drain electrodes (drain voltage) is in the range of 1V to 10V, The current is below the measurement limit of the semiconductor parameter analyzer, i.e., 1×10 -13 Below A The following characteristics can be obtained.

[0745] Therefore, the high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor film has a channel region. The transistors in which this region is formed have small fluctuations in electrical characteristics and are highly reliable. Note that charges trapped in the trap states of the oxide semiconductor film can be dissipated. It takes a long time for the charge to reach the target, and it may behave as if it were a fixed charge. A transistor in which a channel region is formed in an oxide semiconductor film with a high density of trap states has The characteristics may become unstable. Impurities include hydrogen, nitrogen, alkali metals, or arsenic. Alkaline earth metals, etc.

[0746] Hydrogen contained in the oxide semiconductor film reacts with oxygen that is bonded to metal atoms to become water. Oxygen vacancies are formed in the lattice from which oxygen has been removed (or in the portion from which oxygen has been removed). When hydrogen enters, electrons, which act as carriers, may be generated. Also, some of the hydrogen may be converted to gold. It can combine with oxygen, which is a carrier of electrons, to produce a A transistor using an oxide semiconductor film containing hydrogen is likely to be normally on. For this reason, it is preferable that the amount of hydrogen in the oxide semiconductor film 108 be reduced as much as possible. Specifically, the hydrogen concentration in the oxide semiconductor film 108 obtained by SIMS analysis is 2 × 10 20 atoms / cm 3 Less than or equal to 5×10 19 atoms / cm 3 Less than or equal to 1×10 19 atoms / cm 3 Less than or equal to 5×10 1 8 atoms / cm 3Less than or equal to 1×10 18 atoms / cm 3 More details below. Preferably 5 x 10 17 atoms / cm 3 Less than 1×10, more preferably 16 ato ms / cm 3 The following applies.

[0747] In addition, the oxide semiconductor film 108b has a region with a lower hydrogen concentration than the oxide semiconductor film 108c. The oxide semiconductor film 108b preferably has a higher water content than the oxide semiconductor film 108c. By having a region with a low concentration of elemental oxygen, a highly reliable semiconductor device can be obtained.

[0748] In addition, the oxide semiconductor film 108b contains silicon or carbon, which is one of the Group 14 elements. When the oxide semiconductor film 108b is filled with oxygen, oxygen vacancies increase in the oxide semiconductor film 108b, causing the oxide semiconductor film 108b to become n-type. Therefore, the concentrations of silicon and carbon in the oxide semiconductor film 108b and the oxide semiconductor film 108 The concentration of silicon and carbon near the interface with b (obtained by SIMS analysis) is calculated as 2 × 1 0 18 atoms / cm 3 Less than or equal to 2×10 17 atoms / cm 3 The following .

[0749] In addition, in the oxide semiconductor film 108b, the alkali metal or is the concentration of alkaline earth metals, 1×10 18 atoms / cm 3 Below, preferably 2 x 1 0 16 atoms / cm 3 Alkali metals and alkaline earth metals are oxide semiconductors. When it bonds with a conductor, it can generate carriers, which increases the off-state current of the transistor. For this reason, the alkali metal or alkaline earth metal of the oxide semiconductor film 108b may It is preferable to reduce the concentration of metals.

[0750] When the oxide semiconductor film 108b contains nitrogen, electrons that serve as carriers are generated, and The carrier density increases and the oxide semiconductor film containing nitrogen is easily converted to n-type. The transistor using this oxide semiconductor film tends to be normally on. In this case, it is preferable that the nitrogen content is reduced as much as possible. For example, The nitrogen concentration is 5×10 18 atoms / cm 3 It is preferable to do the following:

[0751] The oxide semiconductor film 108b and the oxide semiconductor film 108c each have a non-single crystal structure. The non-single crystal structure may be, for example, a CAAC-OS (C Axis Aligned Crystal-Oxide) structure, which will be described later. ned Crystalline Oxide Semiconductor), polycrystalline Among non-single crystal structures, the amorphous structure is the most The defect state density is high in CAAC-OS, while the defect state density is the lowest in CAAC-OS.

[0752] 《An insulating film that functions as a second gate insulating film》 The insulating films 114 and 116 function as a second gate insulating film of the transistor 100. In addition, the insulating films 114 and 116 have a function of supplying oxygen to the oxide semiconductor film 108. That is, the insulating films 114 and 116 contain oxygen. The insulating film 114 is an insulating film that can be used to form an insulating film 116 to be formed later. The oxide semiconductor film 108 also functions as a film for reducing damage to the oxide semiconductor film 108 during the thermal treatment.

[0753] For example, the insulating films 114 and 116 described in the seventh embodiment may be replaced with the insulating films 114 and 116. It can be used.

[0754] <<Oxide Semiconductor Film Functioning as a Conductive Film and an Oxide Semiconductor Film Functioning as a Second Gate Electrode>> Conductive Film》 The conductive film 120a functioning as a conductive film is formed using a material similar to that of the oxide semiconductor film 108 described above. and the conductive film 120b functioning as the second gate electrode.

[0755] That is, the conductive film 120a functions as a conductive film, and the second gate electrode The conductive film 120b is formed by the oxide semiconductor film 108 (the oxide semiconductor film 108b and the oxide semiconductor film 108c) is a metal element included in the conductive layer that functions as a second gate electrode. The oxide semiconductor film 108 (the oxide semiconductor film 108b and the oxide semiconductor film 10 8c) By using the same metal element as the above, it is possible to reduce manufacturing costs. It becomes Noh.

[0756] For example, a conductive film 120a functioning as a conductive film and a conductive film 120b functioning as a second gate electrode are provided. In the case of In-M-Zn oxide, the conductive film 120b is formed by depositing In-M-Zn oxide. The atomic ratio of the metal elements in the sputtering target used for this purpose must satisfy the following: In≧M The atomic ratio of the metal elements in such a sputtering target is preferably In: M:Zn=2:1:3, In:M:Zn=3:1:2, In:M:Zn=4:2:4.1 etc.

[0757] In addition, the conductive film 120a functioning as a conductive film and the conductive film 120b functioning as a second gate electrode are The structure of the film 120b may be a single layer structure or a laminated structure of two or more layers. In addition, when the conductive films 120a and 120b have a laminated structure, the above-mentioned sputtering There is no limitation on the composition of the target.

[0758] <An insulating film that functions as a protective insulating film for transistors> The insulating film 118 functions as a protective insulating film for the transistor 100 .

[0759] The insulating film 118 contains either hydrogen or nitrogen, or both. The insulating film 118 contains nitrogen and silicon. The insulating film 118 contains oxygen, hydrogen, water, and alkaline metals. The insulating film 118 has a function of blocking metals, alkaline earth metals, etc. The oxygen diffuses from the oxide semiconductor film 108 to the outside, and the oxygen is contained in the insulating films 114 and 116. The diffusion of oxygen to the outside and the entry of hydrogen, water, and the like into the oxide semiconductor film 108 from the outside are prevented. It is possible to do so.

[0760] The insulating film 118 is a conductive film 120a that functions as a conductive film and a second gate electrode. A function of supplying either or both of hydrogen and nitrogen to the conductive film 120b which functions as a In particular, the insulating film 118 contains hydrogen, and the hydrogen is absorbed into the conductive films 120a and 120b. It is preferable that the insulating film 118 has a function of supplying water to the conductive films 120a and 120b. By supplying the element, the conductive films 120a and 120b function as conductors.

[0761] For example, a nitride insulating film can be used as the insulating film 118. Examples include silicon nitride, silicon oxynitride, aluminum nitride, and aluminum oxynitride. There is.

[0762] Note that the various films such as the conductive film, the insulating film, and the oxide semiconductor film described above are formed by sputtering. It can be formed by the PECVD method, but other methods such as thermal CVD (Chemical CVD) are also possible. Alternatively, the insulating layer may be formed by a thermal CVD method. As an example, MOCVD (Metal Organic Chemical Vapor Deposition) Deposition) method and ALD (Atomic Layer Deposition) ) method may also be used.

[0763] Thermal CVD is a film formation method that does not use plasma, so defects can occur due to plasma damage. This has the advantage that the

[0764] In the thermal CVD method, the source gas and the oxidizing agent are fed into the chamber at the same time, and the pressure inside the chamber is raised to atmospheric pressure. The film is formed by reacting the reactants near or on the substrate under reduced pressure and depositing them on the substrate. It is also possible.

[0765] In addition, in the ALD method, the pressure inside the chamber is set to atmospheric pressure or reduced pressure, and the source gas for the reaction is sequentially The gas may be introduced into the next chamber, and the gas introduction sequence may be repeated to form a film. For example, two or more types of valves can be switched by switching each valve (also called high-speed valves). The source gases are supplied to the chamber in order, and the first source gas is supplied to the chamber in order to prevent the mixture of the source gases. An inert gas (argon, nitrogen, etc.) is introduced simultaneously with or after the gas, and the second When an inert gas is introduced at the same time, the inert gas is used as a carrier gas. The inert gas may be introduced at the same time as the second source gas is introduced. Also, instead of introducing an inert gas, the first source gas is discharged by evacuation, and then A second source gas may be introduced. The first source gas is adsorbed on the surface of the substrate to form a first layer. The first layer is then deposited on the second layer, which reacts with the second source gas introduced later. This process is repeated several times while controlling the gas introduction sequence until a thin film of the desired thickness is formed. By doing so, a thin film with excellent step coverage can be formed. The thickness of the thin film is determined by the order of gas introduction. The number of times the process is repeated can be adjusted, allowing precise film thickness control. This is suitable for fabricating FETs with high

[0766] Thermal CVD methods such as MOCVD and ALD can be used to form the conductive film, insulating film, and oxide semiconductor of the above-mentioned embodiment. It is possible to form various films such as conductor films and metal oxide films. For example, In-Ga-ZnO When forming a film, trimethylindium, trimethylgallium, and dimethylzinc are used. The chemical formula for trimethylindium is In(CH 3 ) 3 Also, The chemical formula for trimethylgallium is Ga(CH 3 ) 3 The chemical formula for dimethylzinc is , Zn(CH 3 ) 2 In addition, the combination is not limited to these, and trimethylgallium is also usable. Instead of gallium, triethylgallium (chemical formula Ga(C 2 H 5 ) 3 ) can also be used, Diethyl zinc (chemical formula Zn(C 2 H 5 ) 2 ) can also be used.

[0767] For example, when forming a hafnium oxide film using a deposition system that uses ALD, the solvent and Liquids containing hafnium precursor compounds (hafnium alkoxides, tetrakisdimethylamine, etc.) The raw material gas is vaporized hafnium amide (TDMAH, etc.) and oxidized As an agent, ozone (O 3 Two types of gases are used: tetrakisdimethylamide hafnium The chemical formula for nium is Hf[N(CH 3 ) 2 ] 4 In addition, other material liquids include tetrahydrofuran. Examples include kis(ethylmethylamido)hafnium.

[0768] For example, when forming an aluminum oxide film using a film forming apparatus that uses ALD, a solvent and a liquid containing an aluminum precursor compound (e.g., trimethylaluminum (TMA)) The raw gas is oxidized and H 2 Two types of gases are used: trimethylammonia, trimethylphenylacetone, and trimethylphenylacetone. The chemical formula for aluminum is Al(CH 3 ) 3 Other liquid materials include Tris(diisopropyl alcohol, Methylamido)aluminum, triisobutylaluminum, aluminum tris(2, 2,6,6-tetramethyl-3,5-heptanedionate).

[0769] For example, when forming a silicon oxide film using a deposition system that uses ALD, The chlorine contained in the adsorbed material is removed, and the oxidizing gas (O 2 , nitrous oxide) radicals are supplied to react with the adsorbate.

[0770] For example, when forming a tungsten film using a deposition system that uses ALD, the WF 6 G S and B 2 H 6 The gases are introduced repeatedly in sequence to form an initial tungsten film, and then WF 6 Gas and H 2 A tungsten film is formed using gas. 2 H 6 Instead of gas, SiH 4 A gas may also be used.

[0771] For example, an oxide semiconductor film, such as an In-Ga-ZnO film, can be formed by a film forming apparatus using ALD. When depositing a film of In(CH 3 ) 3 Gas and O 3 Gases were introduced repeatedly to obtain In-O layer, and then Ga(CH 3 ) 3 Gas and O 3 A GaO layer is formed using a gas, and Then Zn(CH 3 ) 2 Gas and O 3 The ZnO layer is formed using a gas. The order of is not limited to this example. In addition, by mixing these gases, In-Ga-O layers and In-Zn A mixed compound layer such as a Ga-Zn-O layer or a Ga-Zn-O layer may be formed. 3 Instead of gas The H obtained by bubbling an inert gas such as Ar 2 O gas may be used, but it does not contain H. No 3 It is preferable to use In(CH 3 ) 3 Instead of gas, In(C 2 H 5 ) 3 Gas may also be used. 3 ) 3 Instead of gas, Ga(C 2 H 5 ) 3 Gas may also be used.3 ) 2 A gas may also be used.

[0772] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification. .

[0773] (Embodiment 9) In this embodiment, a configuration of a data processing device according to one embodiment of the present invention will be described with reference to FIGS. The explanation will be given with reference to the above.

[0774] FIG. 35(A) is a block diagram illustrating the configuration of information processing device 200. 1 is a projection diagram illustrating an example of the external appearance of an information processing device 200.

[0775] FIG. 36(A) is a diagram illustrating the configuration of the display unit 230. FIG. 36(B) is a diagram illustrating the configuration of the display unit 23 FIG. 36(C) is a diagram illustrating the configuration of pixel 232(i,j). FIG.

[0776] <Configuration example of information processing device> The information processing device 200 described in this embodiment includes a calculation device 210 and an input / output device 22. 0 and (see FIG. 35(A)).

[0777] The calculation unit 210 is supplied with position information P1 and has a function of supplying im...

Claims

1. a first conductive film, a second conductive film, a first signal line, and a second signal line; the second conductive film has a region that does not overlap with the first conductive film; the first signal line is electrically connected to the first conductive film, the second signal line is electrically connected to the second conductive film, the first conductive film has a function of capacitively coupling with an adjacent one; An input device, wherein the second conductive film has a function of capacitively coupling with an object in its vicinity.

2. A display device and an input device according to claim 1, the input device has a function of detecting an object approaching a display surface side of the display device, the display device includes a first pixel having an area overlapping the first conductive film, the display device includes a second pixel having an area overlapping the second conductive film; the first pixel comprises a first display element; The second pixel comprises a second display element.

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