Light emitting device

Abstract

To provide a reliable light emitting device that inhibits an element from being broken when a physical force is externally applied, and inhibits a resin or wiring in contact with a flexible substrate from being damaged by heat in a process of crimping an FPC.SOLUTION: A flexible light emitting device including an organic EL element is so configured that a neutral plane in which no stress distortion occurs with respect to deformation is located in the vicinity of both a transistor and the organic EL element. The outermost surface of the light emitting device is hard. Alternatively, a substrate overlapping with a terminal connecting to an FPC has a coefficient of thermal expansion of 10 ppm / K or less.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] Organic electroluminescence (hereinafter referred to as EL) The present invention relates to a light-emitting device, an electronic device, and a lighting device that utilize the phenomenon. [Background technology]

[0002] In recent years, research and development of light-emitting elements that utilize organic electroluminescence (organic electroluminescence elements) has been actively carried out. The basic structure of an organic EL element is a layer containing a light-emitting organic compound (EL layer) between a pair of electrodes. It is sandwiched between the above.

[0003] Since organic EL elements are self-luminous, light-emitting devices using organic EL elements have excellent visibility, It has the advantage of not requiring a backlight and consuming little power. It also has the advantage of being able to respond quickly to input signals.

[0004] In addition to being thin and lightweight, light-emitting devices using organic EL elements are also flexible. Since it can improve shock resistance, it is being considered for use in flexible substrates. In addition, the use of flexible substrates is not only useful for light-emitting devices, but also for semiconductor devices. It is also applied to semiconductor devices that operate by utilizing the same.

[0005] For example, Patent Document 1 discloses a film substrate on which transistors and organic EL display devices are mounted. A flexible active matrix type light emitting device having an EL element is disclosed.

[0006] In addition, Patent Document 2 discloses a flexible resin substrate on which an organic EL element is supported. an organic EL display panel having a resin substrate, an inorganic barrier film covering the surface of the resin substrate, and and a resin sealing film that surrounds the display panel.

[0007] In addition, a method for manufacturing a semiconductor device using a flexible substrate includes a method for manufacturing a semiconductor device using a glass substrate or a quartz substrate. After a semiconductor element such as a thin film transistor is formed on the substrate, the substrate is transferred to another substrate. Techniques have been developed to transfer the semiconductor element onto a substrate (e.g., a flexible substrate). In order to transfer a semiconductor element to another substrate, the substrate used to fabricate the semiconductor element must be degaussed. A step of isolating the elements is necessary.

[0008] For example, Patent Document 3 describes a peeling technique using laser ablation as follows: First, a separation layer made of amorphous silicon or the like is provided on a substrate, and a thin film element is then formed on the separation layer. A peelable layer including a polymer is provided, and the peelable layer is adhered to the transfer body by an adhesive layer. The separation layer is ablated by irradiation with the laser light, causing peeling in the separation layer. do.

[0009] Patent Document 1 also describes a technique for performing peeling using physical force such as by hand. In Patent Document 1, a metal layer is formed between a substrate and an oxide layer, and the interface between the oxide layer and the metal layer is bonded. By utilizing the weak bonding between the oxide layer and the metal layer, peeling occurs at the interface between the oxide layer and the metal layer. The layer and the substrate are separated. [Prior art documents] [Patent documents]

[0010] [Patent Document 1] JP 2003-174153 A [Patent Document 2] International Publication No. 2006 / 046679 Brochure [Patent Document 3] Japanese Patent Application Publication No. 10-125931 Summary of the Invention [Problem to be solved by the invention]

[0011] However, in a light-emitting device using a flexible substrate, physical forces such as bending and curvature are applied from the outside. When the voltage is applied from the outside, the transistors and organic EL elements are subjected to stress, causing them to break down. This may happen.

[0012] If either the transistor or the organic EL element is destroyed, the display of the light-emitting device will will cause problems.

[0013] Therefore, one aspect of the present invention is to provide a method for preventing a transistor or The present invention aims to provide a highly reliable light-emitting device that prevents the organic EL element from being damaged. This is the target.

[0014] In addition, in the configuration described in Patent Document 2, mechanical pressure is applied locally from the surface of the resin sealing film. If this occurs, there is a risk that the organic EL element will be destroyed.

[0015] In addition, in the configuration described in Patent Document 2, the resin sealing film is thickened to increase the mechanical strength. If the resin is formed too thin, the following problems arise. If the oil sealing film is formed too thick, the entire device will become thick and its flexibility will be lost. Another reason is that when the resin sealing film becomes thick, the stress caused by the shrinkage of the resin sealing film causes The whole device curls.

[0016] Therefore, one aspect of the present invention is to provide a light-emitting device having both high flexibility and high mechanical strength. One of the objects of the present invention is to provide a device.

[0017] In addition, in mounting a light-emitting device formed on a flexible substrate, an anisotropic conductive film is used. Then, the connector (FPC: Flexible printed circuit) is heat-pressed. The flexible substrate is attached to the terminal electrode by thermocompression bonding to ensure electrical continuity. The board itself, or the resin or wiring on the board, is damaged by heat, resulting in the destruction of the light-emitting device. The flexible board is flexible and may cause problems with heat changes. This is because, depending on the shape, cracks can occur in the resin or wiring.

[0018] Therefore, one aspect of the present invention is to provide a method for crimping an FPC without causing cracks in the wiring. It is an object of the present invention to provide a light emitting device that can be attached to a terminal electrode and electrically connected thereto. do. [Means for solving the problem]

[0019] The light-emitting device according to one embodiment of the present invention includes a planarization layer between a pair of flexible substrates, a transistor provided on the other side of the planarization layer; and an organic EL element provided in contact with the other side of the planarization layer. In the light-emitting device according to one embodiment of the present invention, The thickness from one side of the optical device to the other side of the planarization layer (the thickness on the side that contains the transistors) and each of the planarizing layers is formed so that the difference in thickness from the other surface of the planarizing layer to the other surface of the light emitting device becomes small. Because of the layers, when an external physical force is applied to the transistor, The difference between the stress applied to the organic EL element and the stress applied to the organic EL element is small. When gluing, not only is it possible for A and B to be in contact with C, but also for D on A and E on B to be in contact with C. This also includes a configuration in which A and B are glued together by being in contact with each other.

[0020] In addition, stress distortion such as compressive stress and tensile stress occurs due to deformation such as bending in the light emitting device. The neutral surface (surface that does not expand or contract) is located in the planarization layer, in the transistor, or in the organic electroluminescence (EL) layer. It is located in the vicinity of both the transistor and the organic EL element, such as inside the element. Therefore, the stress applied to the transistor and the organic EL element can be reduced. And / or the organic EL element can be prevented from being damaged by bending or curving. This makes it possible to realize a highly reliable light emitting device.

[0021] In this specification, one surface and the other surface of a substrate or a planarizing layer refer to surfaces that face each other. Refers to...

[0022] Specifically, a light-emitting device according to one embodiment of the present invention includes a first flexible substrate and a second flexible substrate. A planarization layer is provided between one surface of a conductive substrate and a transistor is provided on one surface side of the planarization layer. a first electrode provided in contact with the other surface of the planarization layer and electrically connected to the transistor; a layer including a light-emitting organic compound on the first electrode, and a second layer including a light-emitting organic compound on the layer including a light-emitting organic compound; A light-emitting element having two electrodes, and an adhesive layer for bonding the first flexible substrate and the second flexible substrate. and a thickness that is a distance from the other surface of the first flexible substrate to the other surface of the planarization layer. A is the distance from the other surface of the planarization layer to the other surface of the second flexible substrate, which is the thickness B. In other words, the thickness of the first flexible substrate is 0.8 times or more and 1.2 times or less. The thickness A, which is the distance from the interface of the planarization layer and the adhesive layer to the interface of the second flexible substrate, is The distance to the other surface is 0.8 to 1.2 times the thickness B.

[0023] In the above light emitting device, it is more preferable that the thickness A is 0.9 to 1.1 times the thickness B. I wish.

[0024] In addition, in the light-emitting device according to one embodiment of the present invention, a first flexible substrate and a second flexible substrate are provided. A planarization layer, a transistor provided on one surface side of the planarization layer, and a planarization layer a first electrode provided in contact with the other surface of the flattening layer and electrically connected to the transistor; a layer including a light-emitting organic compound on the first electrode, and a layer including a light-emitting organic compound on the second electrode a light emitting element having a first electrode and an adhesive layer for bonding a first flexible substrate and a second flexible substrate; and a thickness B, which is a distance from the other surface of the planarization layer to the other surface of the second flexible substrate, is 0.8 times the thickness A, which is the distance from the other surface of the first flexible substrate to the other surface of the planarization layer More than 1.2 times or less.

[0025] In the above light emitting device, it is more preferable that the thickness B is 0.9 to 1.1 times the thickness A. I wish.

[0026] It is particularly preferable to provide elements that can withstand a small amount of stress close to the neutral plane. This reduces the stress on the element when an external physical force is applied. Therefore, in the light-emitting device, the planarization layer can be in contact with the transistor. is preferred.

[0027] The light-emitting device of one embodiment of the present invention has flexibility, is provided on an insulating surface, and has a light-emitting element between a pair of electrodes. A light-emitting element having a layer containing a light-emitting organic compound sandwiched therebetween, a first protective layer covering the light-emitting element, and a second protective layer. and a second protective layer provided on the first protective layer. The first protective layer has a thickness of 0. The thickness of the second protective layer is 0.1 μm or more and less than 100 μm, and the second protective layer does not face at least the light emitting element. The hardness of the surface is preferably greater than that of the first protective layer.

[0028] Here, since the surface of the first protective layer is softer than the surface of the second protective layer, When mechanical pressure is applied locally from the outside or when the light-emitting device is bent, the light-emitting element may be damaged. This stress can be alleviated (such an effect is also called the cushioning effect). In addition, if the first protective layer is less than 0.1 μm thick, the stress cannot be sufficiently relieved, On the other hand, when the first protective layer is 100 μm or more, The flexibility of the light-emitting device may be lost or the light-emitting device may curl. be.

[0029] In addition, in a region overlapping with an element layer (including a light-emitting element, etc.) and a region where no element layer is provided, The thickness of the protective layer of the first embodiment may be different. Also, if the top surface of the element layer is not flat, the same problem may occur. The thickness of the first protective layer is not constant. Therefore, the thickness of the first protective layer is The thickness of the thin portion may be within the above-mentioned thickness range.

[0030] In this way, since the first protective layer is formed to be sufficiently thin, the stress on the light emitting element is reduced. At the same time, the light emitting device as a whole can have high flexibility. Even if the insulating layer is formed thin like this, at least the surface of the insulating layer provided on the top surface of the light emitting device The hard second protective layer causes the light-emitting element to be destroyed by external mechanical pressure. This suppresses the occurrence of light emitting diodes, and thus makes it possible to provide a light emitting device with high flexibility and high mechanical strength. Cut.

[0031] In addition, a light-emitting device according to another embodiment of the present invention has flexibility and includes a light-emitting organic compound layer between a pair of electrodes. A light emitting element having a layer containing the compound sandwiched therebetween, a first protective layer and a third protective layer sandwiching the light emitting element therebetween. a second protective layer provided on a surface of the first protective layer that does not face the light emitting element; and a third protective layer. and a fourth protective layer provided on the surface of the protective layer that does not face the light emitting element. The first protective layer and the third protective layer each have a thickness of 0.1 μm or more and less than 100 μm. The second protective layer has a surface that does not face the light emitting element and is harder than the surface of the first protective layer. The fourth protective layer is harder than the third protective layer, and the hardness of at least the surface that does not face the light emitting element is harder than the third protective layer. It is preferably harder than the surface of the layer.

[0032] With this structure, the light emitting element (or the element layer including the light emitting element) can be protected from both sides. Therefore, the light emitting device can have improved mechanical strength.

[0033] In this case, the first protective layer and the third protective layer are made of the same material, and the second protective layer is made of the same material. It is preferable to configure the first protective layer and the fourth protective layer from the same material, since the material can be made common.

[0034] In any one of the above light emitting devices, the first protective layer and the second protective layer are The light emitted from the light emitting element is emitted through the first protective layer and the second protective layer. It is preferable that the above-mentioned

[0035] In particular, a light-emitting device with a top emission structure that emits light toward the surface on which the light-emitting element is formed. In the case of the above, if the mechanical strength of the light-emitting surface is low, the light-emitting element is easily destroyed. The device configuration provides a highly reliable system that combines flexibility and high mechanical strength. A light emitting device with a top emission structure can be realized.

[0036] In any of the above light emitting devices, a protective layer overlapping the light emitting element is provided between the light emitting element and the second protective layer. The first protective layer and the second protective layer are transparent to visible light. The light-emitting element emits white light, and the light emitted from the light-emitting element is It is preferable that the ink is injected through a filter and a second protective layer.

[0037] With this configuration, the second protective layer is formed on not only the light emitting element but also the color filter. It also functions as a protective layer, preventing the color filter from being damaged and causing light leakage. .

[0038] In any one of the above light-emitting devices, a photocatalytic material is provided in contact with the surface of the second protective layer. It is preferable to provide a fifth protective layer comprising a material that

[0039] Due to the strong oxidizing effect of materials that exhibit photocatalytic properties, the surface of the light-emitting device may become contaminated with organic matter. In addition, such materials exhibit superhydrophilic properties and are effective in preventing the formation of oily stains. This prevents dirt from sticking to the skin, and dirt can be easily washed off with running water. Mechanical pressure is applied to the surface of the light-emitting device, such as when wiping off organic dirt that has adhered or settled thereon. This reduces the frequency of damage to the surface of the light-emitting device or the destruction of the light-emitting element. This can prevent problems such as

[0040] In addition, one aspect of the present invention is a liquid crystal display device comprising: a first substrate; a second substrate opposed to the first substrate; and a liquid crystal display device partially connected to the first substrate. a third substrate overlapping the third substrate, a terminal section having two or more terminals on the third substrate, and a terminal a light emitting element electrically connected to the first substrate and a light emitting element sealed between the first substrate and the second substrate, and an adhesive layer for bonding the first substrate and the second substrate together, and the thermal expansion coefficient of the third substrate (thermal expansion coefficient This light-emitting device has a photoluminescence (or photoluminescence) value of 10 ppm / K or less.

[0041] When the FPC is pressed onto the terminals, heat is applied to the anisotropic conductive film, which then bonds the film to the board with the terminals. In the light-emitting device according to one embodiment of the present invention, cracks tend to occur in the resin or wiring that is connected to the light-emitting device, or in the substrate itself. The thermal expansion coefficient of the third substrate is small, at 10 ppm / K or less, and deformation due to heating is small. Therefore, it is possible to prevent cracks from occurring in the resin or wiring in contact with the third board, or in the third board itself. Cut.

[0042] Furthermore, since a substrate that does not transmit visible light can be used as the third substrate, the third substrate can emit light. It is preferable that the first substrate and the second substrate do not overlap with the element. At least one of the substrates may be a substrate having a transparency to visible light. Cushion structure (bottom emission structure), top emission structure, dual emission structure ( Both panels (double-sided injection structure) can be easily obtained.

[0043] Furthermore, the first substrate and the third substrate are bonded together so that the terminal portion overlaps with each other. The absolute value of the difference between the thermal expansion coefficient C of the laminated substrate to which the plate is bonded and the thermal expansion coefficient D of the second substrate (|C -D|) is preferably within 10% of C or D.

[0044] The difference between the thermal expansion coefficient of the laminated substrate formed by bonding the first and third substrates and the thermal expansion coefficient of the second substrate is If the thermal expansion coefficient of the laminated substrate or the second substrate is within 10% of the thermal expansion coefficient of the laminated substrate, the substrate This makes it less likely to warp.

[0045] In addition, one aspect of the present invention is a semiconductor device including a first substrate, a second substrate opposed to the first substrate, and two or more terminals. a terminal portion having a first substrate and a second substrate, an adhesive layer that bonds the first substrate and the second substrate together so as to seal the light emitting element between the substrates; The terminal portion is provided in a region of the first substrate that does not overlap with the second substrate, and the thermal expansion coefficient of the first substrate is However, this light-emitting device has a light-emitting efficiency of 10 ppm / K or less.

[0046] In the light-emitting device according to one embodiment of the present invention, the thermal expansion coefficient of the first substrate is small, ie, 10 ppm / K or less. Since the deformation caused by heat is small, the clamp is not applied to the resin or wiring in contact with the first board, or to the first board itself. This can make it more difficult for locks to enter.

[0047] Furthermore, the absolute value of the difference (|ED|) between the thermal expansion coefficient E of the first substrate and the thermal expansion coefficient D of the second substrate is It is preferable that the difference in the thermal expansion coefficient between the first substrate and the second substrate is within 10% of D or E. If the thermal expansion coefficient of at least one of the first and second substrates is within 10% of that of the first substrate, the substrate can be moved in one direction. It can be made less prone to warping.

[0048] Furthermore, it is preferable that the light emitting device has an FPC thermocompression bonded to the terminal portion.

[0049] Another embodiment of the present invention is an electronic device including the above-described light-emitting device in a display portion. By applying the above, highly reliable electronic devices can be realized.

[0050] In this specification, the term "light-emitting device" refers to an image display device or a light source (including a lighting device). In addition, if a connector, such as FPC or TCP (Tape Carrier), is attached to the light emitting device, The module has a printed wiring board attached to the end of the TCP. A COG (Chip On Glass) is attached to the module or the substrate on which the light emitting element is formed. All modules with ICs directly mounted using the assembly method are included in the light emitting device. It shall be so. Effect of the Invention

[0051] In the light-emitting device according to one embodiment of the present invention, when an external physical force is applied to the transistor, The difference between the stress applied and the stress applied to the organic EL element is small, and the value of the stress is also small. Therefore, the transistor or the organic EL element is prevented from being damaged by bending or curving. A highly reliable light emitting device can be realized.

[0052] In addition, one embodiment of the present invention provides a light-emitting device that has both flexibility and high mechanical strength. Can be provided.

[0053] In one embodiment of the present invention, a resin that contacts the flexible substrate around the FPC terminal electrode It is possible to provide a light emitting device in which cracks are suppressed from occurring in the wiring or the substrate itself. [Brief description of the drawings]

[0054] [Figure 1] 1A and 1B illustrate a light-emitting device according to one embodiment of the present invention. [Diagram 2] 1A and 1B illustrate a light-emitting device according to one embodiment of the present invention. [Diagram 3] 1A and 1B illustrate a light-emitting device according to one embodiment of the present invention. [Figure 4] 1A and 1B illustrate a light-emitting device according to one embodiment of the present invention. [Diagram 5] 1A to 1C illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention. [Figure 6]1A to 1C illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention. [Figure 7] 1A and 1B illustrate a light-emitting device according to one embodiment of the present invention. [Figure 8] 1A and 1B illustrate a light-emitting device according to one embodiment of the present invention. [Figure 9] 1A and 1B illustrate a light-emitting device according to one embodiment of the present invention. [Figure 10] 1A and 1B are diagrams illustrating display devices according to one embodiment of the present invention. [Figure 11] 1A and 1B are diagrams illustrating display devices according to one embodiment of the present invention. [Figure 12] 1A and 1B illustrate a lighting device according to one embodiment of the present invention. [Figure 13] 1A and 1B illustrate a light-emitting device according to one embodiment of the present invention. [Figure 14] 1A and 1B illustrate a light-emitting device according to one embodiment of the present invention. [Figure 15] 1A and 1B illustrate a light-emitting device according to one embodiment of the present invention. [Figure 16] 1A to 1C illustrate a method for manufacturing a light-emitting device according to one embodiment of the present invention. [Figure 17] FIG. [Figure 18] 1A and 1B are diagrams illustrating electronic devices and lighting devices. [Figure 19] FIG. [Figure 20] FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0055] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiment, and various changes and modifications may be made in the form and details without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the above-mentioned invention can be obtained by the following embodiments. The present invention should not be construed as being limited to the contents described below. The same reference numerals are used in different drawings to indicate the same parts or parts having similar functions. A repeated explanation will be omitted.

[0056] In each figure described in this specification, the size, layer thickness, or area of ​​each component is not clearly indicated. The figures may be exaggerated for illustrative purposes and are not necessarily limited to scale.

[0057] (Embodiment 1) In this embodiment, a light-emitting device of one embodiment of the present invention will be described with reference to FIGS.

[0058] A schematic diagram of a light-emitting device according to one embodiment of the present invention is shown in FIG. A planarization layer 105 is disposed between one surface of the substrate 101 and one surface of the second flexible substrate 111. The transistor 103 provided on one surface of the planarization layer 105 and the other surface of the planarization layer 105 are The organic EL element 107 is provided on one side of the first flexible substrate 101 and the second flexible substrate 102. The transistor 103, the planarization layer 105, and the organic EL element 107 are sandwiched between the substrate 111. The organic EL element 107 is provided on the other surface of the planarization layer 105. A first electrode 171 is provided in contact with the transistor 103 and is electrically connected to the transistor 103. A layer (EL layer) 173 containing a light-emitting organic compound on the electrode 171, and a second The electrode 175 is

[0059] In the light emitting device shown in FIG. 1, the flattening layer 105 is formed on the other surface of the first flexible substrate 101. The distance to the other surface is indicated as thickness A. In the light emitting device shown in FIG. The distance from the other surface of the first flexible substrate 111 to the other surface of the second flexible substrate 111 is shown as thickness B. That is, the thickness A is the thickness of the flattening layer 105 and the adhesive layer 10 from the other surface of the first flexible substrate 101. 9, and thickness B is the distance from the interface of the planarization layer 105 and the adhesive layer 109 to the second The distance to the other surface of the flexible substrate 111 is indicated.

[0060] In the light-emitting device according to one embodiment of the present invention, the thickness A is 0.8 times or more and 1.2 times or less (preferably) the thickness B. (For example, 0.9 times or more and 1.1 times or less) or thickness B is 0.8 times or more and 1. It is 2 times or less (preferably, 0.9 times or more and 1.1 times or less).

[0061] In the light-emitting device of one embodiment of the present invention, the thickness A (the thickness on the side including the transistor 103) and the thickness B Since each layer is provided so as to reduce the difference in thickness (on the side including the organic EL element 107), Therefore, when a physical force is applied from the outside, the stress applied to the transistor 103 and the organic EL The difference with the stress applied to element 107 is small.

[0062] In addition, stress distortion such as compressive stress and tensile stress occurs due to deformation such as bending in the light emitting device. A neutral surface (a surface that does not expand or contract) that does not occur is formed in the planarization layer 105, the transistor 103, or in the vicinity of both the transistor 103 and the organic EL element 107, such as within the organic EL element 107 Therefore, the stress applied to the transistor 103 and the organic EL element 107 is Therefore, the transistor 103 and / or the organic EL element 107 can be curved. This makes it possible to prevent the light emitting device from being damaged due to bending or curvature, thereby achieving a highly reliable light emitting device.

[0063] The further away from the neutral plane an element is, the greater the magnitude of the compressive or tensile stress. It is particularly preferable that elements that can withstand a small amount of stress are provided close to the neutral plane. This reduces the stress applied to the element when a physical force is applied from the outside. Therefore, in the light-emitting device according to one embodiment of the present invention, the planarization layer 105 can be It is preferable that the transistor 103 be in contact with the transistor 103 .

[0064] An example of a material that can be used in the light-emitting device of one embodiment of the present invention will be described. Each component of the light emitting device is used as a similar component to be exemplified in the embodiment described later. Materials that can be used are also applicable.

[0065] [Flexible board] The first flexible substrate 101 and the second flexible substrate 111 are made of a flexible material. In particular, the substrate on the side from which light emitted from the organic EL element 107 is extracted is required to have flexibility and to have a visible light In this case, a material that is also transparent to light (hereinafter, referred to as transparent) is used.

[0066] As a material having flexibility and light transmission, for example, polyethylene terephthalate (PET) ), polyester resins such as polyethylene naphthalate (PEN), polyacrylonitrile Resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin , polyethersulfone (PES) resin, polyamide resin, cycloolefin resin, poly Examples include styrene resin, polyamide-imide resin, and polyvinyl chloride resin. It is preferable to use a material with a low modulus of elasticity, for example, polyamide-imide resin, polyimide resin, etc. The resin, PET, etc. can be preferably used. In addition, a substrate in which a fiber body is impregnated with a resin (preprint) can be used. The use of substrates with a reduced thermal expansion coefficient by mixing inorganic fillers with organic resins is also It is also possible.

[0067] When the fibrous body is contained in a material having flexibility and light transmission, the fibrous body is an organic compound or High-strength fibers made of inorganic compounds are used. Specifically, high-strength fibers have a tensile modulus or Young's modulus Representative examples are polyvinyl alcohol fibers and polyester fibers. fiber, polyamide fiber, polyethylene fiber, aramid fiber, polyparaphenylene Examples of the fiber include benzobisoxazole fiber, glass fiber, and carbon fiber. Examples of the glass fibers include those using E glass, S glass, D glass, Q glass, etc. These are used in the form of woven or nonwoven fabric, and the fibers are impregnated with resin and the resin is hardened to form a structure. A structure made of a fiber body and a resin may be used as the flexible substrate. The use of such a material is preferable because it improves reliability against breakage due to bending or localized pressure.

[0068] In order to improve the light extraction efficiency, it is preferable that the refractive index of the flexible and light-transmitting material is high. For example, by dispersing an inorganic filler having a high refractive index in an organic resin, the organic resin This allows the realization of a substrate with a higher refractive index than a substrate made of only SiO2. The use of such an inorganic filler is preferable since it does not impair optical transparency.

[0069] In addition, the substrate on the side from which light is not extracted does not need to have light-transmitting properties. In addition to the substrate, a metal substrate or the like can also be used. The thickness of the metal substrate is determined based on the flexibility and bendability. In order to obtain the above, the thickness is 10 μm or more and 200 μm or less, preferably 20 μm or more and 50 μm or less. Since the metal substrate has high thermal conductivity, it is possible to effectively dissipate heat generated by the light emission of the organic EL element. It is possible to effectively dissipate heat.

[0070] The material constituting the metal substrate is not particularly limited, but examples thereof include aluminum, copper, and nickel. It is preferable to use metal alloys such as aluminum alloys and stainless steel. This can be done.

[0071] As for the flexible substrate, the layer using the above-mentioned material serves as a hard layer that protects the surface of the light-emitting device from scratches. A hard coat layer (e.g., a silicon nitride layer) or a layer of a material that can disperse pressure (e.g., an aluminum alloy layer) The organic electroluminescence (EL) layer may be laminated with a polyimide resin layer or the like. In order to prevent deterioration of the element's lifespan, silicon nitride, silicon oxide nitride (also written as oxynitride) Films containing nitrogen and silicon such as silicon nitride, and films containing nitrogen and aluminum such as aluminum nitride It may be provided with a protective membrane with low water permeability.

[0072] [Transistor] The structure of a transistor used in a light-emitting device according to one embodiment of the present invention is not particularly limited. The transistor may be a staggered type transistor or an inverted staggered type transistor. As either a top-gate or bottom-gate transistor structure, There is also no particular limitation on the material used for the transistor. For example, silicon A transistor using a silicon oxide semiconductor or germanium in a channel formation region can be used. can be done.

[0073] [Planarization layer] The planarization layer 105 is an insulating film provided to reduce surface irregularities caused by the transistor 103. For example, polyimide, acrylic, polyamide, polyimide amide, benzocyclobutene, Organic materials such as tantalum resins can be used. Low-k materials can also be used. In addition, a planarization layer 105 can be formed by stacking a plurality of insulating films. You may do so.

[0074] [Organic EL element] The structure of the organic EL element used in the light-emitting device according to one embodiment of the present invention is not particularly limited. An organic EL element having a cushion structure may be used, or an organic EL element having a bottom emission structure may be used. Alternatively, an organic EL element having a dual emission structure may be used. An example of the configuration of the element will be described in detail in the seventh embodiment.

[0075] [Adhesive layer] When a top-emission organic EL element is used, the adhesive layer 109 is For example, a photo-curable adhesive such as an ultraviolet-curable adhesive, a reactive Various types of curing adhesives can be used, including curing adhesives, thermosetting adhesives, and anaerobic adhesives. These adhesives include epoxy resin, acrylic resin, silicone resin, and phenolic resin. Resins, imide resins, etc. In particular, materials with low moisture permeability such as epoxy resins are preferred. For example, the adhesive may contain a desiccant (such as zeolite). This can suppress deterioration of the EL element. In addition, it is preferable that the adhesive layer has a high refractive index. For example, by mixing a filler with a high refractive index (titanium oxide, zirconium, etc.) This can improve the light extraction efficiency from the organic EL element.

[0076] Even when using bottom-emission organic EL elements, the advantages of the top-emission structure are still apparent. The adhesive layer 109 may be made of the same material as that used in the organic EL element. The light transmittance of the coating layer 109 does not matter.

[0077] <Light-emitting device configuration example 1> FIG. 2 shows an example of a specific configuration of a light-emitting device to which one embodiment of the present invention is applied. 2A is a plan view of a light-emitting device according to one embodiment of the present invention. 2. Signal line driver circuit 4503a, signal line driver circuit 4503b, scanning line driver circuit 4504a 2A, a scanning line driver circuit 4504b, and an FPC 4505. 1 shows a cross-sectional view between dashed dotted lines CD.

[0078] The light emitting device shown in FIG. 2B has one surface of the first flexible substrate 101 and one surface of the second flexible substrate A planarization layer 105 is provided between one surface of the planarization layer 105 and one surface of the planarization layer 105. A transistor 103 and an organic EL element 107 provided on the other surface side of the planarization layer 105. and an adhesive layer 109 that bonds the first flexible substrate 101 and the second flexible substrate 111 together. can.

[0079] A base film 121 is provided on one surface of the first flexible substrate 101. The transistor 103 is provided with a gate electrode 131, a gate The insulating film 133, the semiconductor layer 135, and the source electrode or the drain electrode are formed of The conductive layer 137 includes a conductive layer 137a and a conductive layer 137b.

[0080] An insulating film 141 that covers the transistor and a planarization layer 105 are provided on the transistor 103. It is being done.

[0081] The organic EL element 107 includes a first electrode 171 electrically connected to the conductive layer 137b, an EL layer The first electrode 171 has a first electrode 173 and a second electrode 175. The end of the first electrode 171 is covered with a partition wall 161. It is being done.

[0082] In FIG. 2B, from the other surface of the first flexible substrate 101 to the other surface of the planarization layer 105 The distance between the other surface of the planarization layer 105 and the second possible The distance to the other surface of the flexible substrate 111 is shown as thickness B.

[0083] In the light-emitting device according to one embodiment of the present invention, the thickness A is 0.8 times or more and 1.2 times or less (preferably) the thickness B. (For example, 0.9 times or more and 1.1 times or less) or thickness B is 0.8 times or more and 1. 2 times or less (preferably 0.9 times or more and 1.1 times or less). When a certain force is applied, the stress applied to the transistor 103 and the stress applied to the organic EL element 107 are The difference with the stress is small.

[0084] In addition, stress distortion such as compressive stress and tensile stress occurs due to deformation such as bending in the light emitting device. The neutral surface (surface that does not expand or contract) is formed in the planarization layer 105, the transistor 103, or In the vicinity of both the transistor 103 and the organic EL element 107, such as in the organic EL element 107, Therefore, the values ​​of the stress applied to the transistor 103 and the organic EL element 107 are Therefore, the transistor 103 and / or the organic EL element 107 can be curved. This prevents damage caused by bending or bending, thus realizing a highly reliable light-emitting device. can.

[0085] An example of a material that can be used for the light-emitting device shown in FIG. 2 is described below. Description of the configurations in which the materials are exemplified will be omitted.

[0086] [Base film] In order to stabilize the characteristics of the transistor 103, it is preferable to provide a base film 121. The film 121 may be silicon oxide, silicon nitride, silicon oxynitride, or silicon nitride oxide. The base film 121 can be formed as a single layer or a multilayer using an inorganic insulating film such as a sintered material. It can be formed by using a sputtering method, a plasma CVD method, a coating method, a printing method, etc. Using a sputtering method, a film thickness of 10 nm to 3000 nm, preferably 200 nm or less, is formed. A silicon oxide film having a thickness of 1500 nm or less may be formed on the upper surface of the substrate 121. If not present, it need not be provided.

[0087] [Transistor] <Gate electrode> The material of the gate electrode 131 is molybdenum, titanium, chromium, tantalum, tungsten, or aluminium. Metallic materials such as aluminum, copper, neodymium, and scandium, or alloy materials containing these elements The film may be formed as a single layer or a laminate using the above-mentioned formula (I).

[0088] <Gate insulating film> The gate insulating film 133 is formed by depositing silicon oxide using a plasma CVD method, a sputtering method, or the like. Silicon nitride, silicon oxynitride, silicon nitride oxide, or aluminum oxide For example, the deposition gas is SiH4 and N2O. A silicon oxynitride film may be formed by plasma CVD using the silicon oxide film.

[0089] Semiconductor layer The semiconductor layer 135 can be formed using a material such as a silicon semiconductor or an oxide semiconductor. The crystallinity of the semiconductor is not particularly limited, and the semiconductor may be an amorphous semiconductor or a crystalline semiconductor. (Microcrystalline semiconductor, polycrystalline semiconductor, or semiconductor having a crystalline region in part) It is preferable to use a semiconductor having crystallinity since the deterioration of the transistor characteristics is suppressed. Silicon semiconductors include amorphous silicon, single crystal silicon, polycrystalline silicon, etc. As the oxide semiconductor, an In-Ga-Zn-O-based metal oxide or the like can be used. Regarding an oxide semiconductor that can be used in one embodiment of the present invention, see Embodiment 8. This will be explained in.

[0090] <Source electrode, drain electrode> The conductive layers 137a and 137b function as a source electrode and a drain electrode, respectively. For example, aluminum, chromium, copper, tantalum, titanium, molybdenum, tungsten A metal film containing an element selected from the above, or a metal nitride film containing the above-mentioned element (titanium nitride film, Molybdenum nitride film, tungsten nitride film, etc. can be used. Titanium, molybdenum, tungsten, etc. are deposited on either or both of the upper and lower sides of the metal film such as copper. Any high melting point metal film or its metal nitride film (titanium nitride film, molybdenum nitride film, titanium nitride film, etc.) Alternatively, a structure in which a tin film (e.g., an tin film) is laminated may be used.

[0091] The conductive layer 137a and the conductive layer 137b may be formed of a conductive metal oxide. Conductive metal oxides include indium oxide (In2O3, etc.), tin oxide (SnO2, etc.), Zinc oxide (ZnO), indium tin oxide (ITO) e), indium zinc oxide (In2O3-ZnO, etc.), or these metal oxide materials A material containing silicon oxide can be used.

[0092] [Insulating film] The insulating film 141 has the effect of suppressing the diffusion of impurities into the semiconductor that constitutes the transistor. The insulating film 141 may be a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or the like. The inorganic insulating film may be used.

[0093] [Bulkhead] The partition 161 is formed using an organic insulating material or an inorganic insulating material. The side wall of the opening is made of a slab material and has a continuous curvature to create an inclined surface. It is preferable to form

[0094] In addition, even if a sealing film with low moisture permeability is formed between the adhesive layer 109 and the second electrode 175, Examples of sealing films with low moisture permeability include silicon oxide, silicon nitride, and aluminum oxide. Um etc. can be used.

[0095] In the light emitting device of the present embodiment, when a physical force is applied from the outside, the transistor The difference between the stress applied to the organic EL element and the stress applied to the organic EL element is small, and the value of the stress is small. This makes it possible to prevent the transistor or organic EL element from being damaged by bending or curving, and improves signal quality. A highly reliable light-emitting device can be realized.

[0096] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0097] (Embodiment 2) In this embodiment, a light-emitting device according to one embodiment of the present invention will be described with reference to FIGS.

[0098] In the light emitting device of this embodiment, elements such as transistors are formed on a formation substrate. The device is fabricated using a technique to transfer the device from a flexible substrate.

[0099] <Configuration Example 2 of Light Emitting Device> FIG. 3 shows an example of a specific structure of a light-emitting device to which one embodiment of the present invention is applied. 3A is a plan view of a light-emitting device according to one embodiment of the present invention. 2, a signal line driver circuit 4503, a scanning line driver circuit 4504, and an FPC 4505. FIG. 3B shows a cross-sectional view taken along dashed line EF in FIG.

[0100] The light emitting device shown in FIG. 3B has one surface of the first flexible substrate 101 and one surface of the second flexible substrate A planarization layer 105 is provided between one surface of the planarization layer 105 and one surface of the planarization layer 105. A transistor 103 and an organic EL element 107 provided on the other surface side of the planarization layer 105. and an adhesive layer 109 that bonds the first flexible substrate 101 and the second flexible substrate 111 together. can.

[0101] One surface of the first flexible substrate 101 and the base film 121 are bonded together with an adhesive layer 123. On the base film 121, a plurality of transistors (transistor 103, transistor 1 43, transistor 145, and transistor 147).

[0102] In addition, an insulating film 141 that covers the multiple transistors and a planarization layer 105 are provided. The planarizing layer 105 has a laminated structure of a first planarizing layer 151 and a second planarizing layer 153. Between the first planarization layer 151 and the second planarization layer 153, a source voltage of the transistor 103 is provided. A wiring 155 is provided to electrically connect the positive or negative electrode and the lower electrode of the organic EL element. It is being done.

[0103] FIG. 3B shows an organic EL element having a bottom emission structure. A color filter 157 is provided in an area overlapping the light-emitting area of ​​the organic EL element 107. The edge of the lower electrode of the organic EL element is covered with a partition wall 161.

[0104] <Light-emitting device configuration example 3> FIG. 4 shows an example of a specific structure of a light-emitting device to which one embodiment of the present invention is applied. 4A is a plan view of a light-emitting device according to one embodiment of the present invention. 2. Signal line driver circuit 4503a, signal line driver circuit 4503b, scanning line driver circuit 4504a 4B, the scanning line driver circuit 4504b, and the FPC 4505. 4 shows a cross-sectional view between dashed dotted lines GH.

[0105] The light emitting device shown in FIG. 4B has one surface of the first flexible substrate 101 and one surface of the second flexible substrate A planarization layer 105 is provided between one surface of the planarization layer 105 and one surface of the planarization layer 105. A transistor 103 and an organic EL element 107 provided on the other surface side of the planarization layer 105. and an adhesive layer 109 that bonds the first flexible substrate 101 and the second flexible substrate 111 together. can.

[0106] One surface of the first flexible substrate 101 and the base film 121 are bonded together with an adhesive layer 123. A plurality of transistors (such as the transistor 103) are provided on the base film 121. There are.

[0107] In addition, an insulating film 141 that covers the multiple transistors and a planarization layer 105 are provided. A partition wall 161 is provided on the planarizing layer 105 to cover the end of the lower electrode of the organic EL element 107. is.

[0108] In the light emitting device shown in FIG. 4B, a first flexible substrate 101 and a second flexible substrate Spacers that adjust the distance between 111 (also called the cell gap) and the upper electrode of the organic EL element An auxiliary wiring electrically connected to the partition wall 161 may be provided between the partition wall 161 and the second flexible substrate 111. stomach.

[0109] One surface of the second flexible substrate 111 and the base film 185 are bonded together with an adhesive layer 187. On the base film 185, a light-emitting region of the organic EL element 107 is overlapped. The color filter 181 and the black matrix 18 provided in the area overlapping the partition wall 161 There exists 3.

[0110] In FIG. 3B and FIG. 4B, the planarization layer 105 is formed on the other surface of the first flexible substrate 101. The distance from the other surface of the flattening layer 105 to the second flexible substrate 104 is indicated as thickness A. The distance to the other surface of the conductive substrate 111 is shown as thickness B.

[0111] In the light-emitting device according to one embodiment of the present invention, the thickness A is 0.8 times or more and 1.2 times or less (preferably) the thickness B. (For example, 0.9 times or more and 1.1 times or less) or thickness B is 0.8 times or more and 1. 2 times or less (preferably 0.9 times or more and 1.1 times or less). When a certain force is applied, the stress applied to the transistor 103 and the stress applied to the organic EL element 107 are The difference with the stress is small.

[0112] In addition, stress distortion such as compressive stress and tensile stress occurs due to deformation such as bending in the light emitting device. The neutral surface (surface that does not expand or contract) is formed in the planarization layer 105, the transistor 103, or In the vicinity of both the transistor 103 and the organic EL element 107, such as in the organic EL element 107, Therefore, the values ​​of the stress applied to the transistor 103 and the organic EL element 107 are Therefore, the transistor 103 and / or the organic EL element 107 can be curved. This prevents damage caused by bending or bending, thus realizing a highly reliable light-emitting device. can.

[0113] An example of a material that can be used for the light emitting device shown in FIG. The description of the configurations in which the materials are exemplified above will be omitted. The components may be made of materials that can be used for similar components as exemplified in other embodiments. is applicable.

[0114] [Adhesive layer] The adhesive layer 123 and the adhesive layer 187 can be made of the same material as the adhesive layer 109. In particular, the material used on the light-emitting element side from which light is extracted is a material with refractive index. Preferably, the material has a high refractive index.

[0115] [Color filters, black matrix] The color filter is provided for the purpose of adjusting the color of light emitted from the organic EL element. When using light-emitting elements that emit light in different colors to create a full-color light-emitting device, In this case, red (R), green (G) and other organic electroluminescent (EL) elements are overlapped with a color filter. It is also possible to use three colors, including blue (B), green (C), or yellow (Y) to make four colors. Each color filter is made of various materials using printing, inkjet, and photolithography. They are formed at desired positions by an etching method using a graphic technique or the like.

[0116] The black matrix (also called the light-shielding film) is provided between adjacent color filters. The black matrix blocks light from the adjacent organic EL elements. The color filter is then aligned along the edge of the black matrix to suppress color mixing between the color filters. By overlapping the black matrix, light leakage can be suppressed. In addition, a material that blocks light emitted from the organic EL element can be used. The black matrix can be formed by using a material other than the driver circuit portion. It may be provided in an area other than the element portion.

[0117] In the light-emitting device shown in FIG. 4B, the color filter 181 and the black matrix 1 An overcoat may be provided to cover the 83. By providing an overcoat, the color filter This prevents impurities contained in the filter from diffusing into the organic EL element. The gate is made of a material that transmits light emitted from the organic EL element, such as a silicon nitride film. By using inorganic insulating films such as silicon oxide films, and organic insulating films such as acrylic films and polyimide films, Alternatively, the insulating film may have a laminated structure of an organic insulating film and an inorganic insulating film.

[0118] In the present embodiment, the light emitting device using the color filter method has been described as an example. The light configuration is not limited to this, and for example, a color-coded method or a color conversion method may be applied.

[0119] [Base film] The base film 185 can be formed of the same material as the base film 121. It is not necessary to provide this if necessary.

[0120] [wiring] The wiring 155 may be made of a highly conductive material. For example, Materials that can be used include those that can be used.

[0121] The spacers on the partition wall 161 are formed using an inorganic insulating material, an organic insulating material, or a metal material. For example, the organic insulating material may be a resin having negative or positive photosensitivity. The material may be a resin material, a non-photosensitive resin material, or the like. For example, tin, aluminum, etc. can be used.

[0122] A method for manufacturing the light emitting device shown in FIGS. 3 and 4 will be described with reference to FIGS.

[0123] <Method 1 for manufacturing a light-emitting device> A method for manufacturing the light-emitting device shown in FIG. 3 will be described with reference to FIG.

[0124] First, a peeling layer 503 is formed on a substrate 501, and a layer to be peeled 505 is formed on the peeling layer 503. (Figure 5(A)).

[0125] There is no particular limitation on the layer formed as the layer to be peeled 505. Here, the layer to be peeled 505 is A protective layer, a base film 121, a transistor 103, an insulating film 141, a color filter 157, The planarizing layer 105, the lower electrode of the organic EL element 107, and the partition wall 161 are formed in this order. 05, the EL layer of the organic EL element 107, the upper electrode, and the organic EL element 107 are sealed. A sealing film or the like may be formed to prevent the peeling. Alternatively, only the insulating film may be formed, and the transistor 103 and the like may be manufactured after peeling and transferring.

[0126] The substrate 501 may be a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, or a gold substrate. A metal substrate or the like can be used.

[0127] The glass substrate may be made of, for example, aluminosilicate glass or aluminoborosilicate glass. For example, a glass material such as barium borosilicate glass can be used. If the strain point is high, it is advisable to use one with a strain point of 730°C or higher. By adding more aO), a more practical heat-resistant glass can be obtained. etc. can be used.

[0128] When a glass substrate is used as the substrate 501, an acid is preferably provided between the substrate 501 and the peeling layer 503. Silicon oxide film, silicon oxynitride film, silicon nitride film, silicon oxide nitride film, etc. If such a film is formed, contamination from the glass substrate can be prevented, which is preferable.

[0129] The release layer 503 may be made of tungsten, molybdenum, titanium, tantalum, niobium, nickel, or copper. Barium, Zirconium, Zinc, Ruthenium, Rhodium, Palladium, Osmium, Iridium An element selected from aluminum and silicon, an alloy material containing the element, or a compound material containing the element. The silicon-containing layer is made of a single layer or a laminated layer. The crystal structure of the silicon-containing layer is amorphous, microcrystalline, and It may be either crystalline or polycrystalline. Aluminum oxide, gallium oxide, zinc oxide, niobium oxide, etc. Titanium oxide, indium oxide, indium tin oxide, indium zinc oxide, and InGa Any metal oxide such as ZnO(IGZO) may be used.

[0130] The peeling layer 503 can be formed by a sputtering method, a plasma CVD method, a coating method, a printing method, or the like. The coating method includes a spin coating method, a droplet discharging method, and a dispense method.

[0131] When the peeling layer 503 has a single-layer structure, it is preferably a tungsten layer, a molybdenum layer, or a combination of tungsten and molybdenum. It is preferable to form a layer containing a mixture of tungsten and borane. a layer containing an oxide or oxynitride of molybdenum, a layer containing an oxide or oxynitride of molybdenum, or a layer containing tungsten A layer containing an oxide or oxynitride of a mixture of stainless steel and molybdenum may be formed. A mixture of tungsten and molybdenum is, for example, an alloy of tungsten and molybdenum. is equivalent to.

[0132] The peeling layer 503 is a stack of a layer containing tungsten and a layer containing an oxide of tungsten. When forming a layered structure, a layer containing tungsten is formed, and an upper layer made of oxide is formed. By forming an insulating film, tungsten oxide is formed at the interface between the tungsten layer and the insulating film. In addition, the surface of the layer containing tungsten may be treated with a thermal acid. Tungsten is removed by chemical treatment, oxygen plasma treatment, or treatment with highly oxidizing solutions such as ozone water. A layer containing an oxide of tungsten may be formed. The plasma treatment or heat treatment may be performed using oxygen, nitrogen, or the like. The treatment may be carried out in an atmosphere of nitrous oxide alone or a mixture of nitrous oxide and other gases. The above plasma treatment or heat treatment changes the surface state of the peeling layer 503, It is possible to control the adhesion between layer 503 and a protective layer that will be formed later.

[0133] The protective layer included in the peeled layer 505 is made of silicon nitride, silicon oxynitride, or silicon oxynitride. It is preferable to form a single layer or multiple layers using a silicon or the like.

[0134] The protective layer can be formed by using a sputtering method, a plasma CVD method, a coating method, a printing method, or the like. For example, the film formation temperature can be set to 250°C or higher and 400°C or higher by plasma CVD. By forming the membrane as a protective layer, it is possible to obtain a dense membrane with extremely low water permeability. The thickness of the layer is preferably 10 nm to 3000 nm, more preferably 200 nm to 1500 nm. It is preferable that the protective layer is not provided when the base film 121 also functions as a protective layer. stomach.

[0135] Next, the layer to be peeled 505 and a temporary support substrate 507 are bonded together using a peeling adhesive 509. The peeled layer 503 is used to peel the layer to be peeled 505 from the production substrate 501. The release layer 505 is provided on the temporary support substrate 507 side (FIG. 5(B)).

[0136] The temporary support substrate 507 may be a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, A metal substrate or the like can be used. In addition, a substrate having heat resistance capable of withstanding the processing temperature of this embodiment is also suitable. A plastic substrate having a thickness of 100 nm or a flexible substrate such as a film may be used. .

[0137] The peeling adhesive 509 may be soluble in water or a solvent, or may be plasticized by exposure to ultraviolet light or the like. In this way, the temporary support substrate 507 and the peeled layer 505 can be peeled off when necessary. An adhesive that can be separated chemically or physically is used.

[0138] In addition, the transfer step to the temporary support substrate can be performed by using various methods as appropriate. When a layer containing a metal oxide film is formed on the side in contact with the layer to be peeled off, the metal oxide film The layer to be peeled off can be peeled off from the substrate by weakening the layer by crystallization. When an amorphous silicon film containing hydrogen is formed as a peeling layer between a highly resistant substrate and a peeled layer, In this case, the amorphous silicon film is irradiated with laser light or etched to remove the amorphous silicon. By removing the film, the layer to be peeled off can be peeled off from the formation substrate. A layer including a metal oxide film is formed on the side in contact with the peeled layer, and the metal oxide film is crystallized. The peeling layer is weakened and then partially delaminate using a solution or fluoride gas such as NF3, BrF3, or ClF3. After removal by etching, the weakened metal oxide film can be peeled off. Furthermore, a film containing nitrogen, oxygen, hydrogen, etc. (for example, an amorphous silicon film containing hydrogen) may be used as a peeling layer. , hydrogen-containing alloy film, oxygen-containing alloy film, etc.) is used, and the peeling layer is irradiated with laser light to form a The nitrogen, oxygen and hydrogen contained in the material are released as gas to promote peeling between the layer to be peeled and the substrate. The method may be used.

[0139] Alternatively, the substrate on which the peeled layer is formed is mechanically removed, or the substrate is delaminated with a solution of NF3, BrF3 Alternatively, a method of removing the fluoride gas such as ClF3 by etching can be used. In this case, the release layer does not need to be provided.

[0140] Moreover, by combining a plurality of the above-mentioned peeling methods, the transposition step can be carried out more easily. That is, irradiation with laser light, etching of the peeling layer with gas or solution, etc., and cutting with a sharp knife or scalpel The peeling layer and the layer to be peeled are then made to be in a state where they can be easily peeled off, and then physical force (such as a machine) is applied. Peeling can also be achieved by applying pressure to the surface.

[0141] In addition, the layer to be peeled off can be peeled off from the substrate by penetrating a liquid into the interface between the peeling layer and the layer to be peeled off. Also, during the peeling, liquid such as water may be poured onto the film.

[0142] As another peeling method, when the peeling layer 503 is formed of tungsten, ammonia The peeling layer 503 may be etched with a mixed solution of water and hydrogen peroxide to perform peeling. .

[0143] Next, the substrate 501 is peeled off, and the peeling layer 503 is exposed, or the protective layer is exposed. The first adhesive layer 123 is attached to the release layer 505 using an adhesive different from the peel adhesive 509. A flexible substrate 101 is attached (FIG. 5(C)).

[0144] Thereafter, the peeling adhesive 509 is dissolved or plasticized, and the temporary support substrate 507 is removed. After removing the support substrate 507, a peeling agent is applied to expose the lower electrode of the organic EL element 107. The adhesive 509 is removed with water or a solvent (FIG. 5(D)).

[0145] As a result of the above, the lower electrodes of the transistor 103 and the organic EL element 107 are formed. A release layer 505 can be fabricated on the first flexible substrate 101 .

[0146] Thereafter, the EL layer and the upper electrode (not shown) of the organic EL element 107 are fabricated and bonded. Layer 109 is used to attach a second flexible substrate 111 (Figure 5(E)).

[0147] Finally, attach FPC4505 to each electrode of the input / output terminal section using anisotropic conductive material. If necessary, an IC chip or the like may be mounted.

[0148] Through the above steps, the light-emitting device shown in FIG. 3 can be manufactured.

[0149] Note that when separation is possible at the interface between the formation substrate and the layer to be peeled off, a peeling layer does not have to be provided. For example, a glass substrate is used as the substrate 501, and an organic resin such as polyimide is placed in contact with the glass. An oil film is formed, and a protective layer, a base film, a transistor, etc. are formed on the organic resin film. In this case, By heating the organic resin film, it is possible to peel off the organic resin film at the interface between the substrate 501 and the organic resin film. Then, the organic resin film and the first flexible substrate 101 are bonded together using an adhesive layer 123. Alternatively, a metal layer may be provided between the substrate and the organic resin film, and a current may be applied to the metal layer. The metal layer may be heated by heating the metal layer, and peeling may be performed at the interface between the metal layer and the organic resin film.

[0150] <Method 2 for manufacturing a light-emitting device> A method for manufacturing the light emitting device shown in FIG. 4 will be described with reference to FIG.

[0151] First, a peeling layer 503 is formed on a substrate 501, and a layer to be peeled 505 is formed on the peeling layer 503. (Figure 6(A)).

[0152] Here, the peeled layer 505 includes a protective layer, a base film 121, a transistor 103, and an insulating film. 141, the planarization layer 105, the lower electrode of the organic EL element 107, the partition wall 161, the organic EL element 1 The EL layer 107 and the upper electrode are formed in this order. may be formed.

[0153] In addition, a peeling layer 553 is formed on the production substrate 551, and a peeled layer 555 is formed on the peeling layer 553. (Figure 6(B)).

[0154] Here, the peeled layer 555 includes the undercoat film 185, the black matrix 183, and the color A protective layer is formed between the peeling layer 553 and the undercoat film 185. This is also fine.

[0155] Next, the fabrication substrate 501 and the fabrication substrate 551 are bonded together using the adhesive layer 109 (FIG. 6 (C)).

[0156] Then, the layer to be peeled 505 is peeled off from the formation substrate 501 by using the peeling layer 503. The film is peeled off from the substrate 501, and the peeling layer 503 or the protective layer (or the base film 121) is exposed. The first flexible substrate 101 is adhered to the peeled layer 505 by using the adhesive layer 123 (FIG. 6 (D)).

[0157] Similarly, the layer to be peeled 555 is peeled off from the formation substrate 551 by using the peeling layer 553. A peeled layer 555 which is peeled off from a preparation substrate 551 and in which a peeling layer 553 or a base film 185 is exposed A second flexible substrate 111 is attached to the first flexible substrate 111 using an adhesive layer 187 (FIG. 6(E)).

[0158] Finally, attach FPC4505 to each electrode of the input / output terminal section using anisotropic conductive material. If necessary, an IC chip or the like may be mounted.

[0159] Through the above steps, the light-emitting device shown in FIG. 4 can be manufactured.

[0160] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0161] (Embodiment 3) In this embodiment, a light-emitting device according to one embodiment of the present invention will be described with reference to FIGS.

[0162] <Light-emitting device configuration example 4> FIG. 7 is a schematic cross-sectional view of a light emitting device 400 exemplified in this embodiment.

[0163] The light-emitting device 400 includes an element layer 420 including a light-emitting element 410 provided on a substrate 401; A first protective layer 411 covering the child layer 420 and a second protective layer provided on the first protective layer 411. A layer 412.

[0164] The substrate 401 is flexible, and a light emitting element 410 is formed on the insulating surface of the substrate 401. .

[0165] The light-emitting element 410 has a first electrode 403, an EL layer 405, and a second electrode 407 on a substrate 401. The EL layer 405 contains at least a light-emitting organic compound. At least one of the first electrode 403 and the second electrode 407 is formed from the EL layer 405. The EL layer 405 is sandwiched between the first electrode 403 and the second electrode 404. By applying a voltage between the electrodes 410 and 417, the light emitting element 410 can be made to emit light.

[0166] Here, a layer including the light-emitting element 410 is referred to as an element layer 420. As shown in FIG. 1, the element layer 420 includes at least the light-emitting element 410, and the elements other than the light-emitting element 410 are not included. It may include elements (such as transistors and wiring).

[0167] The first protective layer 411 is a layer for protecting the element layer 420 and is provided to cover the element layer 420. The first protective layer 411 has a thickness of not less than 0.1 μm and less than 100 μm.

[0168] Here, the first protection layer is formed in the region overlapping with the element layer 420 and in the region where the element layer 420 is not provided. The thickness of the protective layer 411 may vary. Also, when the top surface of the element layer 420 is not flat, Similarly, the thickness of the first protective layer 411 is not constant. It is sufficient that the thickness of the thinnest portion is within the above-mentioned thickness range.

[0169] The second protective layer 412 is provided on the first protective layer 411. The second protective layer 412 is The hardness of at least the surface not facing the element layer 420 is greater than that of the surface of the first protective layer 411. hard.

[0170] The hardness of the surface of the second protective layer 412 that does not face the element layer 420 is, for example, ISO 15. In the pencil hardness test specified in 184, H or higher is preferable. It is preferable that the hardness of the material is 2H or more, and more preferably 3H or more.

[0171] When a pencil hardness test was used as a method for evaluating hardness, the element layer of the second protective layer 412 When the hardness of the surface not facing 420 and the hardness of the first protective layer 411 are judged to be at the same level, is other hardness index (e.g. Vickers hardness) Hardness can be compared using hardness scales such as the Knoop hardness scale and the .

[0172] Here, the surface of the first protective layer 411 is a surface of the second protective layer 412 that does not face the element layer 420. Since the second protective layer 412 is softer than the first protective layer 411, when mechanical pressure is applied locally from the second protective layer 412 side, In addition, when the light emitting device 400 is curved, the stress applied to the element layer 420 can be reduced. Here, when the first protective layer 411 is thinner than 0.1 μm, the stress can be relieved. The light emitting element 410 (or transistor, wiring, etc.) constituting the element layer 420 is broken. On the other hand, if the first protective layer 411 is 100 μm or thicker, the light emitting device may be damaged. The flexibility of the light emitting device 400 may be lost or the light emitting device 400 may curl. There is a risk.

[0173] In this way, since the first protective layer 411 is formed to be sufficiently thin, the response to the element layer 420 is suppressed. This allows the light emitting device 400 as a whole to have high flexibility while mitigating the force. Even if the first protective layer 411 is formed to be thin, the protective layer provided on the outermost surface of the light emitting device The second protective layer 412 has a hard surface that does not face the element layer 420. The mechanical pressure from the light emitting element 410 may damage the elements constituting the element layer 420. The light-emitting device 40 is highly flexible and has high mechanical strength, and is prevented from being broken. 0 can be achieved.

[0174] In addition, as a configuration in which another protective layer is provided between the first protective layer 411 and the second protective layer 412, For example, an organic resin may be used as the first protective layer 411, and a thin film may be formed on the first protective layer 411. A thin film or the like is provided, and a second protective layer 4 is provided on the surface of the film that does not face the element layer 420. The first protective layer 411 and the second protective layer 12 may be an inorganic insulating film. Providing another protective layer between the light emitting device 400 and the insulating layer 412 can further improve the mechanical strength of the light emitting device 400. This can be done.

[0175] <Light Emitting Device Configuration Example 5> In addition, a third protective layer is provided under the element layer 420 including the light emitting element 410 instead of the substrate 401. A fourth protective layer may be provided.

[0176] In the light-emitting device 450 shown in FIG. 8, the configuration of the layers below the element layer 420 is the same as that of the light-emitting device 4 shown in Configuration Example 4. This is different from the device 400.

[0177] In the light-emitting device 450, an element layer 420 is provided on an insulating layer 409. A third protective layer 413 is provided below the child layer 420, and a second protective layer 413 is provided below the child layer 420. A fourth protective layer 414 is provided.

[0178] The third protective layer 413 has a thickness of 0.1 μm or more and less than 100 μm. The hardness of at least the lower surface (the surface not facing the element layer 420) of the protective layer 414 is equal to or greater than the third hardness. It is harder than the surface of the protective layer 413 .

[0179] The hardness of the lower surface of the fourth protective layer 414 is preferably H or more in a pencil hardness test. It is preferable that the hardness of the material is 2H or more, and more preferably 3H or more.

[0180] In this manner, the element layer 420 is a laminate including the first protective layer 411 and the second protective layer 412, and The third protective layer 413 and the fourth protective layer 414 are sandwiched between the laminate. Therefore, the elements constituting the element layer 420 are not broken even when pressure is applied from any side of the light emitting device 450. Since the damage can be suppressed, a highly reliable light emitting device with improved mechanical strength can be realized.

[0181] Here, if the third protective layer 413 is made of the same material as the first protective layer 411, the manufacturing process is simplified. Similarly, the fourth protective layer 414 is preferably made of the same material as the second protective layer 412. It is preferable that the protective layer 412 is made of the same material as the protective layer 412 .

[0182] The first protective layer 411 and the third protective layer 413 may have different thicknesses. In particular, the first protective layer 411 must be thick enough to cover at least the element layer 420. Therefore, it may be thicker than the third protective layer 413 .

[0183] In addition, between the third protective layer 413 and the fourth protective layer 414, another protective layer such as that illustrated in the fourth configuration example may be provided. A protective layer may be provided to improve the mechanical strength of the light emitting device 450 .

[0184] <Configuration Example 6 of Light Emitting Device> Here, the outermost surfaces of the second protective layer 412 and the fourth protective layer 414 are provided with a first protective layer that exhibits a photocatalytic effect. In particular, the fifth protective layer may be provided on the light extraction side. It is preferable.

[0185] The light emitting device 460 shown in FIG. 9 is attached to the surface of the second protective layer 412 that does not face the element layer 420. 7 in that a fifth protective layer 415 is provided. is doing.

[0186] The fifth protective layer 415 contains a material that exhibits a photocatalytic effect. Examples of the metal oxide include titanium oxide and zinc oxide.

[0187] The fifth protective layer 415 is formed by a sputtering method, a sol-gel method, a spin coating method, a dip method, or the like. It can be formed by using a printing method or the like.

[0188] Due to the strong oxidation-reduction reaction of the fifth protective layer 415, the active substances attached to the surface of the fifth protective layer 415 are It can decompose organic substances and prevent the surface of the light-emitting device 460 from becoming dirty with sebum, etc. In addition, the fifth protective layer 415 has a superhydrophilic effect, which prevents oily dirt from adhering to the surface. This prevents dirt from being easily removed by simply exposing the surface of the light-emitting device 460 to running water. As a result, it is possible to easily wipe off organic dirt that has adhered or settled on the surface of the light-emitting device 460. In this way, the frequency with which mechanical pressure is applied can be reduced, and the surface of the light emitting device 460 is prevented from being scratched. Or, elements such as the light emitting element 410 constituting the element layer 420 may be destroyed. This can suppress malfunctions.

[0189] <Method of forming element layer> A method for forming an element layer including a light-emitting element on a flexible insulating surface will be described below. Note that the description of a manufacturing method of a light-emitting device shown in other embodiments can also be referred to.

[0190] The element layer includes at least a light-emitting element, and includes wiring and the like electrically connected to the light-emitting element in addition to the light-emitting element. The light emitting element may include an element such as a transistor used in a circuit for controlling the light emission of the light emitting element.

[0191] Here, the support having an insulating surface on which the element layer is formed is referred to as a substrate. For example, in the configuration examples 4 and 6, the substrate 401 corresponds to the base material. The laminate of the fourth protective layer 414, the third protective layer 413, and the insulating layer 409 corresponds to the base material.

[0192] As a method for forming an element layer on a substrate having a flexible insulating surface, A method for forming an element layer, and a method for forming an element layer on a support substrate having a different rigidity from the substrate. and a method of peeling off the element layer from the supporting substrate and transferring the element layer onto the substrate.

[0193] In the case where the material constituting the base material has heat resistance against the heat applied in the process of forming the element layer, It is preferable to form the element layer directly on the substrate, since the process is simplified. When the element layer is formed in a state where it is fixed to a supporting substrate, it is easy to transport it within and between devices. This is preferable because

[0194] In addition, when a method is used in which an element layer is formed on a supporting substrate and then transferred to the substrate, the supporting substrate is first A peeling layer (corresponding to the preparation substrate 501 or the like shown in Embodiment 2) was formed on a base material (corresponding to the preparation substrate 501 or the like shown in Embodiment 2). A layer (corresponding to the separation layer 503, etc.) and an insulating layer (corresponding to the protective layer shown in the second embodiment) are laminated, and the insulating An element layer is formed on the layer. Then, the element layer is peeled off from the support base material and transferred onto the base material. The peeling occurs at the interface between the support substrate and the release layer, at the interface between the release layer and the insulating layer, or in the release layer. Therefore, it is necessary to select a suitable material.

[0195] For example, a layer containing a high melting point metal material such as tungsten as a peeling layer and an oxide of the metal material A silicon nitride layer or a silicon oxynitride layer is formed on the peeling layer as an insulating layer. It is preferable to use a multi-layer laminate. When a high melting point metal material is used, the element layer forming process This is preferable because it increases the degree of freedom.

[0196] The peeling can be achieved by applying a mechanical force, etching the peeling layer, or by removing a part of the peeling interface. Alternatively, the liquid may be dropped onto the substrate and allowed to permeate the entire peeling interface. The peeling may be performed by applying heat to the peeling interface by utilizing the difference in the rate of peeling.

[0197] As will be described later in the embodiments, a color filter or the like may be formed on a flexible substrate. The same method can be applied to the formation of the insulating film.

[0198] In addition, when bonding a substrate on which an element layer is formed and a substrate on which a color filter is formed, It is preferable to use a curable material as the first protective layer 411 to bond them together. Alternatively, the hardening material may be used in the area outside the area where the first protective layer 411 is provided. These can then be glued together.

[0199] In addition, a supporting substrate on which an element layer is formed and a supporting substrate on which a color filter is formed are previously After bonding, the element layer and the supporting substrate, and the color filter and the supporting substrate are respectively The element layer and the color filter are attached in a state where they are formed on the supporting substrate. By performing the alignment, the alignment accuracy of the lamination can be improved.

[0200] <Materials and Forming Method> The following describes the materials that can be used for each of the above elements and the methods for forming them. Detailed description of the configuration exemplified in the first embodiment will be omitted. Each component of the light emitting device may be used as a similar component exemplified in other embodiments. Materials that can be used are also applicable.

[0201] [substrate] The substrate 401 is made of an organic resin or a glass material having a sufficient thickness to be flexible. The light emitting device can be configured as a bottom emission structure or a dual emission structure. In this case, a material that transmits light emitted from the EL layer 405 is used for the substrate 401 .

[0202] Here, in the case of a light emitting device having a top emission structure, the substrate 401 is made of a metal or When a conductive substrate containing an alloy material is used, the heat generated by the light emitting element formed later can be prevented. This is preferable because it enhances heat dissipation.

[0203] In addition, the surface of the conductive substrate is oxidized or an insulating film is formed on the surface, and insulation treatment is performed. For example, a substrate that has been coated with a coating material by electrochemical deposition, spin coating, dipping, etc. is preferably used. Any coating method, printing method such as screen printing, deposition method such as vapor deposition method or sputtering method, etc. Alternatively, the insulating film may be formed on the surface of a conductive substrate by using the above method, or the insulating film may be left in an oxygen atmosphere or The surface of the substrate 401 may be oxidized by various methods such as heating or anodization. stomach.

[0204] In addition, when the surface of the substrate 401 has an uneven shape, the uneven shape is covered and flattened with an insulating film. A planarizing layer may be provided to form the edge surface. The planarizing layer may be made of an insulating material. The planarization layer can be made of organic or inorganic materials. Deposition methods such as sputtering, coating methods such as spin coating and dipping, inkjet The ink is formed by using a discharge method such as a printing method such as a screen printing method, or the like. It is possible.

[0205] [Light emitting element] The light-emitting element 410 can have the same configuration as the organic EL element 107 shown in the first embodiment. .

[0206] [First protective layer, third protective layer] The first and third protective layers are made of a photocurable organic resin or a two-liquid mixed curable resin. For example, a hardening material such as a thermosetting organic resin, gel, etc. can be used. epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide, polyvinyl Chloride (PVC), Polyvinyl Butyral (PVB), Ethylene Vinyl Acetate (E In particular, materials with low moisture permeability such as epoxy resin are preferred. .

[0207] The first protective layer 411 and the third protective layer 413 may contain a desiccant. For example, chemical adsorption occurs when oxides of alkaline earth metals (calcium oxide, barium oxide, etc.) Other drying agents include zeolites. Alternatively, a substance that adsorbs moisture by physical adsorption, such as silica gel, may be used. When applied to a lighting device, a granular desiccant is provided to prevent the light from emitting light. Since the light emitted from the element 410 is diffusely reflected, the light is highly reliable and has improved viewing angle dependency. Optical devices can be realized.

[0208] [Second protective layer, fourth protective layer] As the second protective layer and the fourth protective layer, for example, the protective layer used for the flexible substrate shown in the first embodiment may be used. Any material that can be used may be used.

[0209] In addition, a material having a plurality of layers laminated thereon can be used as the second protective layer and the fourth protective layer. For example, a material in which two or more layers made of organic resin are laminated, a layer made of organic resin and an inorganic Materials that have layers of different materials laminated together, materials that have layers of two or more different inorganic materials laminated together, etc. When a plurality of layers are laminated, the layer disposed on the side not facing the light emitting element 410 is used. The material used in the present invention is a material having a hardness at least greater than that of the first protective layer or the third protective layer. In addition, by providing a layer made of an inorganic material, it is possible to prevent moisture and the like from penetrating into the light-emitting device. Since the penetration is suppressed, the reliability of the light emitting device can be improved.

[0210] As the inorganic material, metal or semiconductor oxide materials, nitride materials, oxynitride materials, etc. are used. For example, silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, Aluminum, aluminum nitride, aluminum oxynitride, etc. may be used.

[0211] For example, when a layer made of an organic resin and a layer made of an inorganic material are laminated, the layer made of the organic resin The inorganic material is deposited on the upper or lower layer of the above-mentioned insulating material by a sputtering method, a CVD method, a coating method, or the like. The layer may be formed as follows:

[0212] The second and fourth protective layers are made of thin glass that is flexible. In particular, the organic resin layer, the adhesive layer, and the glass layer may be laminated from the side closer to the light emitting element 410. It is preferable to use a sheet. The thickness of the glass layer is 20 μm or more and 200 μm or less. The thickness of the glass layer is preferably 25 μm or more and 100 μm or less. In addition, the organic resin layer can be made thicker and more flexible than the conventional organic resin layer. The thickness is set to 10 μm or more and 200 μm or less, and preferably 20 μm or more and 50 μm or less. By providing such an organic resin layer in contact with the glass layer, the glass layer is prevented from breaking or cracking. The composite material of such glass material and organic resin can suppress the generation of the heat and improve the mechanical strength. By applying the composite material to the second protective layer or the fourth protective layer, it is possible to obtain a highly reliable and The light emitting device can be flexible and reliable.

[0213] This embodiment may be implemented in appropriate combination with other embodiment modes described in this specification. can be done.

[0214] (Embodiment 4) In this embodiment, as a more specific example of the light-emitting device according to one embodiment of the present invention, a structure of a display device In addition, explanations of parts that overlap with the above embodiment will be omitted. Or, explain it simply.

[0215] <Light Emitting Device Configuration Example 7> In this configuration example, a display device having a top emission structure will be described.

[0216] FIG. 10A is a schematic top view of a display device 270 illustrated in this configuration example.

[0217] The display device 270 includes a display unit 271 on the upper surface of the third protective layer 413 on the fourth protective layer 414. 2, a scanning line driving circuit 272, and a signal line driving circuit 273. A first protective layer 411 is provided on the first protective layer 411, and a second protective layer 412 is provided on the first protective layer 411. In addition, the scanning line driver circuit 272 and the signal line driver circuit 273 and the electrical wiring are formed on the third protective layer 413. An external connection terminal 274 is provided for electrically connecting the The FPC 275 is connected to the scanning line driver circuit 272, the signal line driver circuit 273, and the like. Signals such as a source potential and a drive signal can be input from the outside.

[0218] FIG. 10B shows a configuration including an external connection terminal 274, a scanning line driver circuit 272, and a display portion 271. 11A is a schematic cross-sectional view taken along the cutting lines IJ and KL in FIG. 10A, which cuts the region.

[0219] An insulating layer 409 is provided on the third protective layer 413, and a light emitting element 410 and a An element layer 420 including a scanning line driver circuit 272 (and a signal line driver circuit 273), and an external connection A terminal 274 is provided.

[0220] The external connection terminal 274 is a conductive layer that constitutes a transistor or a light-emitting element in the display device 270. In this configuration example, the conductive layer and electrode (source A conductive layer constituting a gate electrode or drain electrode is stacked. By laminating these layers to form the external connection terminal 274, the strength can be increased, which is preferable. In addition, a connector 276 is provided in contact with the external connection terminal 274, and F The PC 275 and the external connection terminal 274 are electrically connected. A paste or sheet-like material made by mixing metal particles with hardening resin is used for thermocompression bonding. Therefore, materials that exhibit anisotropic conductivity can be used. It is possible to use particles with layers of two or more metals, such as gold-coated quartz particles. preferable.

[0221] In FIG. 10B, a scanning line driver circuit 272 is shown. In this example, an NMOS circuit is shown that combines transistor 11 and transistor 212. The scanning line driving circuit 272 is not limited to an NMOS circuit, but may be an n-channel transistor and a p-channel Various CMOS circuits that combine p-channel transistors and p-channel transistors The signal line driver circuit 273 may have a PMOS circuit in which a PMOS transistor is combined with a PMOS transistor. In this configuration example, the display unit 271 is formed on an insulating surface. The figure shows a driver-integrated configuration in which a scan line driving circuit 272 and a signal line driving circuit 273 are formed. However, a scanning line driving circuit 272 and a signal line driving circuit are provided separately from the insulating surface on which the display unit 271 is formed. 273 or both may be provided.

[0222] FIG. 10B shows a cross-sectional structure of one pixel as an example of the display unit 271. 213 for switching, transistor 214 for current control, Electrically connected to an electrode (source electrode or drain electrode) of the control transistor 214 The first electrode 403 is provided with an insulating layer 219 covering the end of the first electrode 403. It is being done.

[0223] The transistors constituting the display unit 271, the scanning line driving circuit 272, and the signal line driving circuit 273 are The structure of the star is not particularly limited.

[0224] The light emitting element 410 can have the same structure as in the above embodiment. Since the device 270 is a display device having a top emission structure, the second electrode 407 is provided with a light-transmitting A transparent material is used for the first electrode 402, and a reflective material is used for the first electrode 403.

[0225] Here, the insulating layer 409 is formed by removing impurities contained in the third protective layer 413 and the fourth protective layer 414. In addition, the insulating layer 216 in contact with the semiconductor layer of the transistor and the insulating layer It is preferable that the insulating layer 218 suppresses the diffusion of impurities into the semiconductor layer. For example, oxides or nitrides of semiconductors such as silicon or metals such as aluminum. In addition, a laminated film of such an inorganic insulating material, or a laminated film of an inorganic insulating material and an organic insulating material can be used. A laminated film of insulating materials may be used. In addition, the insulating layer 217 is formed to prevent surface irregularities caused by transistors. It acts as a planarizing film that reduces

[0226] Here, the layer including the transistor and the light-emitting element 410 corresponds to the element layer 420. In this example, a stack of layers from the top surface of the insulating layer 409 to the second electrode 407 is defined as an element layer 420 .

[0227] An insulating layer 223 is provided on the surface of the second protective layer 412 facing the light emitting element 410. A colored layer is formed on the surface of the layer 223 facing the light emitting element 410 at a position overlapping the light emitting element 410. A filter 221 is provided.

[0228] It is preferable that the insulating layer 223 is made of a material that is difficult to transmit impurities such as water and oxygen. The edge layer 223 may be made of the same material as the insulating layer 409 described above.

[0229] In addition, a black matrix 222 is provided between adjacent color filters 221. The black matrix 222 includes a display unit 271 such as a scanning line driving circuit 272. It may also be provided in an outside area.

[0230] In addition, an overcoat is provided to cover the color filter 221 and the black matrix 222. The overcoat protects the color filter 221 and the black matrix 222. In addition, it also inhibits the diffusion of impurities contained therein.

[0231] A first protective layer 411 is provided on the element layer 420, and an insulating layer 22 is provided on the first protective layer 411. The second protective layer 412 is provided via the element layer 4. The display device 20 is prevented from being destroyed by external mechanical pressure, and has high reliability. 270 has been achieved.

[0232] Further, the element layer 420 is provided on the third protective layer 413 with an insulating layer 409 interposed therebetween. A fourth protective layer 414 is provided on the surface of the protective layer 413 that does not face the element layer 420. Therefore, the mechanical strength of the rear surface of the display device 270 is increased.

[0233] In this way, since the first protective layer 411 is formed to be sufficiently thin, the response to the element layer 420 is suppressed. The force can be reduced while providing the display device 270 with high flexibility as a whole. In addition, a hard layer having a surface that does not face at least the element layer 420 and is provided on the outermost surface of the display device Even if the first protective layer 411 is formed to be as thin as this, the display is not affected by the second protective layer 412. When the device 270 is bent or subjected to external mechanical pressure, the device layer 420 The destruction of the constituent elements such as the light emitting element 410 is suppressed, and high flexibility is achieved. Therefore, a display device 270 having excellent elasticity and high mechanical strength can be realized.

[0234] The element layer 420 is a stack including a first protective layer 411 and a second protective layer 412, and a third protective layer 413. By sandwiching the first protective layer 413 and the fourth protective layer 414, The element layer 420 is prevented from being damaged by pressure from any side of the display device 270. Since the thickness can be controlled, a highly reliable display device having improved mechanical strength can be realized.

[0235] <Configuration Example 8 of Light Emitting Device> In this configuration example, a display device having a bottom emission structure will be described. The explanation of the overlapping parts will be omitted or simplified.

[0236] FIG. 11 is a schematic cross-sectional view of a display device 250 illustrated in this configuration example.

[0237] The display device 250 has a color filter 2 on the side of the element layer 420 on which the light emitting element 410 is to be formed. The display device 270 shown in the seventh configuration example differs from the display device 270 shown in the seventh configuration example in that the display device 270 has a display unit 21.

[0238] In the light-emitting element 410, a light-transmitting material is used for the first electrode 403, and a light-transmitting material is used for the second electrode 407. Therefore, the light emitted from the EL layer 405 is reflected by the third protective layer 41. It is ejected to three sides.

[0239] In addition, a color filter is formed on the insulating layer 218 that covers the transistor at a position that overlaps with the light emitting element 410. Further, an insulating layer 217 is provided to cover the color filter 221. It is being done.

[0240] Here, the insulating layer 217, the insulating layer 218, the insulating layer 216, the insulating layer 409, the third protective layer 41 The third and fourth protective layers 414 are made of a material that transmits light emitted from the EL layer 405. is used.

[0241] The display device exemplified in this embodiment has both high flexibility and high mechanical strength. It is a display device.

[0242] This embodiment may be implemented in appropriate combination with other embodiments described in this specification. can be done.

[0243] (Embodiment 5) In this embodiment, a lighting device to which a light-emitting element is applied is used as an example of a light-emitting device according to one embodiment of the present invention. A configuration example of the device will be described with reference to the drawings. For those parts, the explanation will be omitted or will be simplified.

[0244] FIG. 12A is a schematic top view of a lighting device 290 exemplified in this embodiment. FIG. 12(B) is a schematic cross-sectional view taken along the line MN in FIG. 12(A). The device 290 is a lighting device of a top emission configuration.

[0245] The lighting device 290 includes an insulating layer 413 formed on a third protective layer 413 that is formed on a fourth protective layer 414. A light emitting element 410 is provided via a first protective film 409. A second protective layer 412 is provided on the first protective layer 411. In an area on the protective layer 413 that does not overlap with the first protective layer 411 and the second protective layer 412, The light emitting element 410 has a first electrode 403 and an extraction electrode 293 electrically connected thereto. An extraction electrode 297 is provided which is electrically connected to the electrode 407 .

[0246] Here, the structure including the light-emitting element 410 corresponds to an element layer 420 .

[0247] The first protective layer 411 and the second protective layer 412 are transparent to light emitted from the EL layer 405. A material having the above structure is used.

[0248] In FIG. 12(B), the extraction electrode 293 and the extraction electrode 297 are formed on the same plane. In addition, the first electrode 403 is formed from the same layer as the first electrode 403. A part of 03 constitutes an extraction electrode 293.

[0249] The second electrode 407 is an insulating layer that covers the step portions of the first electrode 403 and the extraction electrode 297. 299 and is provided so as to contact the extraction electrode 297 and is electrically connected thereto. do.

[0250] The extraction electrode 293 and the extraction electrode 297 are made of a conductive film different from that of the first electrode 403. For example, a conductive film thicker than the first electrode 403 may be formed through an insulating layer. It may be arranged below the element 410 (on the third protective layer 413 side). It is preferable to use a conductive film containing copper as the conductive film because the conductivity can be increased. In addition, a first electrode 403 is provided in contact with the upper surface of the extraction electrode 293 without the insulating layer. It may also be configured so that

[0251] The insulating layer 299 is formed on the first electrode 407 so as to prevent the second electrode 407 from shorting out with the first electrode 403. The second electrode 403 is formed on the insulating layer 299. In order to improve the coverage of the pole 407, the upper end or the lower end of the insulating layer 299 is provided with a radius of curvature. It is preferable that the insulating layer 299 has a curved surface having a thickness of 0.2 μm to 3 μm. Materials include organic compounds such as negative photosensitive resins or positive photosensitive resins, and acids. For example, inorganic compounds such as silicon nitride and silicon oxynitride can be used.

[0252] As shown in FIGS. 12A and 12B, the second protective layer 412 is disposed opposite the light emitting element 410. It is preferable that the surface not covered by the lens has a lens-like uneven shape. At the interface between the protective layer 412 and the outside (air), total reflection of the light emitted from the light emitting element 410 occurs. The second protective layer 412 is provided for the purpose of suppressing a decrease in the light extraction efficiency. For this purpose, a lens array, a microlens array, a diffusion sheet, a diffusion film, etc. are used. In particular, the use of a microlens array can efficiently improve the light extraction efficiency. Furthermore, the viewing angle dependency can be improved, so that a lighting device with uniform luminance can be realized.

[0253] As a method for forming the uneven shape on the surface of the second protective layer 412, photolithography is used. A method such as a nanoimprint method or a sandblast method can be appropriately used.

[0254] Here, the refractive index of the second protective layer 412 is equal to or higher than the refractive index of the first protective layer 411. In other words, it is preferable that the film located farther from the light emitting element 410 has a larger refractive index. By adopting such a configuration, it is preferable to set the total thickness of the interface between the layers. Reflection is suppressed, and substantially all of the light emitted from the light emitting element 410 can be extracted.

[0255] In this way, since the first protective layer 411 is formed to be sufficiently thin, the response to the element layer 420 is suppressed. While the force is reduced, the lighting device 290 as a whole can have high flexibility. In addition, a hard layer having a surface that does not face at least the element layer 420 and is provided on the outermost surface of the lighting device Even if the first protective layer 411 is formed to be as thin as this, the second protective layer 412 can prevent the light from being damaged by illumination. When the device 290 is bent or subjected to external mechanical pressure, the device layer 420 The destruction of the constituent elements such as the light emitting element 410 is suppressed, and high flexibility is achieved. Therefore, it is possible to realize a lighting device 290 having excellent flexibility and high mechanical strength.

[0256] The element layer 420 is a stack including a first protective layer 411 and a second protective layer 412, and a third protective layer 413. By sandwiching the protective layer 413 and the fourth protective layer 414 between the laminated body, The destruction of the elements constituting the element layer 420 is suppressed even when pressure is applied from any side of the light source 290. This allows realizing a highly reliable light emitting device with improved mechanical strength.

[0257] This embodiment may be implemented in appropriate combination with other embodiment modes described in this specification. can be done.

[0258] (Embodiment 6) In this embodiment, a light-emitting device according to one embodiment of the present invention will be described with reference to FIGS. do.

[0259] <Configuration Example 9 of Light Emitting Device> A schematic diagram of a light-emitting device according to one embodiment of the present invention is shown in Fig. 13. The light-emitting device shown in Fig. 13 includes a first substrate The first substrate 901 and the second substrate 902 are opposed to each other. The light emitting element 630 is provided between the plates 902. The terminal portion 4601 has two or more terminal electrodes on the third substrate 903. A portion of the third substrate 903 is sandwiched between the first substrate 901 and the second substrate 902.

[0260] The third substrate 903 has a small thermal expansion coefficient of 10 ppm / K. When the FPC is pressed onto b, the heat applied to the anisotropic conductive film causes the third substrate 903 to deform. Therefore, it is possible to prevent cracks from occurring in the resin and wiring that are in contact with the third substrate 903. As a result, a light emitting device with few display defects can be obtained.

[0261] 13, the third substrate 903 does not overlap with the light emitting element 630. 903 can use a substrate that does not transmit visible light, and there is a wide range of materials to choose from.

[0262] In addition, the difference in the thermal expansion coefficient between the first substrate 901 and the second substrate 902 is This is within 10%, so even if heat is applied to the terminal electrode, the board will not break in one direction. It will not warp.

[0263] An example of a material that can be used in the light-emitting device of one embodiment of the present invention will be described. Detailed description of the configuration in which the materials are exemplified in the embodiment will be omitted. Each of the components is made of the same material as that used in the previous embodiment. Fees may also be applicable.

[0264] [First substrate, second substrate, and third substrate] The first substrate 901, the second substrate 902, and the third substrate 903 are each formed of the same material as in the first embodiment. The flexible substrate shown in FIG. 1 and the substrate, second protective layer, and fourth protective layer shown in FIG. 3 may be made of the same material. The second substrate 902 may be a glass substrate, a quartz substrate, or a sapphire substrate. A metal substrate, a ceramic substrate, a metal substrate, or the like can be used.

[0265] In particular, the first substrate 901 and the third substrate 903 are made of substrates having a thermal expansion coefficient of 10 ppm / K or less. The first substrate 901 and the third substrate 903 are substrates that are less likely to deform even when heat is applied. Therefore, even if heat is applied to the first substrate 901 and the third substrate 903, Furthermore, cracks are unlikely to occur in the resin or wiring in contact with the third substrate 903 or in the substrate itself.

[0266] [Terminal electrode] The terminal electrodes 657a and 657b can be made of a material having electrical conductivity. For example, gold The material may be a metal, a semiconductor, or the like.

[0267] [Adhesive layer] The adhesive layer 670 is in contact with the second electrode 622. The second release layer 601b and the first substrate 901 are The adhesive layer 670 is the same as the adhesive layer 1 shown in the first embodiment. It can be made of the same materials as 09. It can also be made of materials that are soluble in water or solvents, or that can be irradiated with ultraviolet light or other light sources. The second substrate 902 and the peeled layer 50 can be plasticized by irradiation when necessary. An adhesive capable of chemically or physically separating the film 5 from the film 5 may be used.

[0268] [Organic EL element] The organic EL element of this embodiment has the same configuration as the organic EL element 107 shown in the first embodiment. can be applied.

[0269] <Light Emitting Device Configuration Example 10> FIG. 14A shows a top view of a light-emitting device according to one embodiment of the present invention. 1 is a cross-sectional view taken along line PQ.

[0270] The light-emitting device shown in FIG. 14B includes a terminal portion 4601, a pixel portion 4602, a signal line circuit portion 4603, and a The terminal portion 4601 has a terminal electrode 657 on the third substrate 903. 02 is a first substrate 901 and a second substrate 902 for controlling the driving of the light emitting element 630 and the light emitting element. The signal line circuit portion 4603 is connected to the first substrate 901. The transistor 652 is sandwiched between the second substrate 902 .

[0271] Each pixel includes a transistor 650 for controlling the driving of a light-emitting element and a transistor for selecting a desired pixel. A transistor 652 is formed.

[0272] The transistor 650 includes a gate electrode 606 formed on an insulating layer 603 and a gate electrode 6 A gate insulating layer 608 formed on the gate insulating layer 608 and a semiconductor layer 610, and a source electrode 612a and a drain electrode 612b formed on the semiconductor layer 610. The transistor 650 also has a first insulating layer 614 and a second insulating layer 616, on which a first electrode 618 and a first electrode A layer 620 (EL layer) containing an organic compound formed on the substrate 618 and a layer 62 0 and a second electrode 622 formed on the first electrode 622.

[0273] The transistor 651 for controlling the driving of the light-emitting element has the same configuration as the transistor 650. However, the size of the transistor (for example, L length and W length) and the connection of the transistor etc. can be adjusted appropriately for each transistor.

[0274] The light emitting elements 630 are separated by partitions 624 to form pixels.

[0275] The partition wall 624 is formed by bonding the first electrode 618, the first insulating layer 614, and the second insulating layer 61 The opening is provided to prevent the light emitting element 630 from being broken due to a step such as an opening provided in the light emitting element 630. Therefore, the partition wall 624 has a forward tapered shape so that the film formed on the upper surface thereof is not interrupted. It is preferable that the layer has a forward tapered shape. This refers to a structure in which the thickness increases and the joint is joined at a slight angle.

[0276] The pixel section 4602 and the signal line circuit section 4603 are formed by the first substrate 901 and the first organic layer 700a. , a first buffer layer 604, and an insulating layer 603. Further, a first release layer 601a

[0043]

[0277] The second substrate 902 includes the second organic layer 700b, the second buffer layer 662, and a passivation layer. A color filter 666 is disposed in contact with the passivation layer 663. and a light-shielding film 664, and an overcoat 668 that covers these. If the emission of 0 is not prevented, a second release layer 601b may be provided on the second substrate 902. .

[0278] The third substrate 903 overlapping the terminal portion 4601 of the light emitting device has a thermal expansion coefficient of 10 ppm / K. Therefore, when the FPC is crimped to the terminal electrode 657, the The third substrate 903 is not easily deformed by heat. Therefore, the resin and wiring in contact with the third substrate 903 are not damaged. As a result, a light emitting device with fewer display defects can be obtained. It is possible.

[0279] In addition, in the configuration of FIG. 14(B), the third substrate 903 does not need to be provided in the pixel portion 4602. Therefore, the third substrate 903 can be a substrate that does not transmit visible light.

[0280] In addition, the difference in the thermal expansion coefficient between the first substrate 901 and the second substrate 902 is 10%, even if heat is applied to the terminal electrode 657, The board will not warp.

[0281] The first release layer 601a and the second release layer 601b are made of the same material as the release layer shown in the second embodiment. The first organic layer 700a and the second organic layer 700b can be formed of The same material as that of the adhesive layer shown in the second embodiment can be used. The protective layer 604 and the second buffer layer 662 are the same as the protective layer shown in the second embodiment. Materials can be used.

[0282] In addition, an insulating layer 603, a gate electrode 606, a gate insulating layer 608, a semiconductor layer 610, a solenoid 612, a gate insulating layer 608, a gate insulating layer 603, a gate insulating layer 606 ... The source electrode 612a and the drain electrode 612b are formed by the undercoat film 12 shown in the first embodiment. 1, a gate electrode 131, a gate insulating film 133, a semiconductor layer 135, a conductive layer 137a and a conductive It can be formed using the same material as layer 137b.

[0283] The first insulating layer 614 is formed on the semiconductor layer 610, the source electrode 612a, and the drain electrode 612b. The first insulating layer 614 is formed on the insulating film 141 shown in the first embodiment. It can be formed using materials.

[0284] A second insulating layer 616 is formed on the first insulating layer 614. The second insulating layer 616 is The planarization layer 105 can be formed using a material similar to that of the planarization layer 105 shown in the first embodiment.

[0285] The partitions 624 are provided to prevent electrical shorts between adjacent first electrodes 618. In addition, when a metal mask is used in forming the layer 620 containing an organic compound, the organic The partition 624 also serves to divide the compound-containing layer 620. It can be formed using the same material as the wall 161 .

[0286] A passivation layer 663, a light-shielding film 664, a color filter 666, and an overcoat 668 are the undercoat film 185, the black matrix 183, and the color filter 184 shown in the second embodiment. The color filters 157 and 181 can be formed using the same material as the overcoat.

[0287] <Method 3 for manufacturing a light-emitting device> A method for manufacturing the light emitting device shown in FIG. 14 will be described with reference to FIG. A detailed description of the parts similar to those in mode 2 will be omitted.

[0288] First, a first release layer 601a is formed on the fabrication substrate 501, and a layer to be peeled is formed on the first release layer 601a. 505 is formed (FIG. 16(A)).

[0289] There is no particular limitation on the layer formed as the layer to be peeled 505. Here, the layer to be peeled 505 is A protective layer, a terminal electrode 657, a transistor, a light emitting element 630, and the like are formed.

[0290] Next, the layer to be peeled 505 and the second substrate 902 are bonded together using an adhesive layer 670, and the first peeling The layer 601a is used to peel off the layer 505 from the production substrate 501. The layer 505 is provided on the second substrate 902 side (FIG. 16(B)). In the above, necessary components such as color filters are formed in advance.

[0291] Next, the substrate 501 is peeled off, and the exposed first peeling layer 601a or protective layer is exposed. The first organic layer 700a is used for the peeled layer 505, and a third substrate is formed so as to overlap the terminal electrode 657. Plate 903 is attached (FIG. 16(C)).

[0292] Next, the first substrate 901 is attached to the first organic layer 700a so as not to overlap the terminal electrode 657. (Figure 16(D).

[0293] As a result of the above, the peeled layer 505 on which the transistor and the light emitting element 630 are formed is transferred to the first substrate 9 It can be made on 01.

[0294] Finally, FPC4605 is attached to each electrode of the terminal electrode 657 using anisotropic conductive material. If necessary, an IC chip or the like may be mounted.

[0295] Through the above steps, the light-emitting device shown in FIG. 14 can be manufactured.

[0296] <Light Emitting Device Configuration Example 11> Regarding the configuration of the terminal portion 4601 in the light-emitting device of one embodiment of the present invention, a configuration example of the light-emitting device is shown below. The configuration different from that of 10 is shown in FIG.

[0297] Note that the same reference numerals are used for the same parts as those in the light emitting device shown in the first embodiment, and the description thereof will be repeated. is omitted.

[0298] The terminal electrode 657 overlaps the first substrate 901, which has a small coefficient of thermal expansion. Even if heat is applied to 657, the first substrate 901 is not easily deformed by heat, so the first substrate 901 Cracks are less likely to occur in the resin and wiring that come into contact with it.

[0299] With the above-mentioned configuration, even if heat is applied to the terminal electrode 657, the first substrate 901 does not change due to the heat. Since the shape is small, cracks may occur in the resin or wiring in contact with the first substrate 901 or in the first substrate itself. As a result, a light emitting device without display defects can be obtained.

[0300] This embodiment mode can be freely combined with other embodiment modes.

[0301] (Embodiment 7) In this embodiment, an example of a light-emitting element that can be applied to one embodiment of the present invention will be described with reference to FIGS. explain.

[0302] The light-emitting element exemplified in this embodiment has a pair of electrodes (a first electrode and a second electrode) and and an EL layer provided between a pair of electrodes. The pair of electrodes is an anode and a cathode. The EL layer has at least a light-emitting layer.

[0303] The light-emitting element shown in FIG. 17A has an EL layer 2 between a first electrode 201 and a second electrode 205. In this embodiment, the first electrode 201 functions as an anode, and the second electrode 2 05 functions as the cathode.

[0304] A voltage higher than the threshold voltage of the light-emitting element is applied between the first electrode 201 and the second electrode 205. Then, holes are injected into the EL layer 203 from the first electrode 201 side, and electrons are injected into the EL layer 203 from the second electrode 205 side. The injected electrons and holes recombine in the EL layer 203, and the EL layer 20 The luminescent substance contained in 3 emits light.

[0305] The EL layer 203 has at least a light-emitting layer. The EL layer 203 has the following layers other than the light-emitting layer: Materials with high hole injection properties, materials with high hole transport properties, hole blocking materials, materials with high electron transport properties A material with high electron injection properties or a bipolar material (high electron transport and hole transport properties) The layer may further include a layer containing a material such as a metal.

[0306] The EL layer 203 can be made of either a low molecular weight compound or a high molecular weight compound. The compound may be included.

[0307] A specific example of the configuration of the EL layer 203 is shown in FIG. In FIG. 3, a hole injection layer 301, a hole transport layer 302, a light emitting layer 303, an electron transport layer 304 and an electrode The child injection layer 305 is laminated in this order from the first electrode 201 side.

[0308] The light-emitting element shown in FIG. 17C has an EL layer 2 between a first electrode 201 and a second electrode 205. 03, and further comprising an intermediate layer 207 between the EL layer 203 and the second electrode 205. .

[0309] A specific example of the configuration of the intermediate layer 207 is shown in FIG. The intermediate layer 207 has at least the charge generating region 308. A relay layer 307 and an electron injection buffer layer 306 may further be provided.

[0310] A voltage higher than the threshold voltage of the light-emitting element is applied between the first electrode 201 and the second electrode 205. Then, holes and electrons are generated in the charge generating region 308, and the holes are transferred to the second electrode 205. The electrons move to the electron relay layer 307. The electron relay layer 307 has high electron transport properties. The electrons generated in the charge generation region 308 are quickly transferred to the electron injection buffer layer 306. The electron injection buffer layer 306 reduces the barrier to injecting electrons into the EL layer 203. Therefore, the electrons generated in the charge generation region 308 are injected into the electron relay 303. layer 307 and the electron injection buffer layer 306, and is injected into the LUMO level of the EL layer 203. do.

[0311] The electron relay layer 307 is made of a material constituting the charge generating region 308 and an electron injection buffer. The materials that make up layer 306 react at the interface, causing interactions that impair the functions of each other. It can be prevented.

[0312] As shown in FIG. 17E and FIG. 17F, the first electrode 201 and the second electrode 205 In this case, the intermediate EL layer may be disposed between the laminated EL layers. It is preferable to provide a layer 207. For example, the light-emitting element shown in FIG. Between the first EL layer 203a and the second EL layer 203b, an intermediate layer 207 is provided. The light-emitting element shown in FIG. 1 has n EL layers (n is a natural number of 2 or more), and a middle layer is provided between each EL layer. It has an intermediate layer 207.

[0313] The electric field in the intermediate layer 207 provided between the EL layer 203(m) and the EL layer 203(m+1) The behavior of electrons and holes will be described. When a voltage higher than the threshold voltage of the molecule is applied, holes and electrons are generated in the intermediate layer 207, and the positive The holes move to the EL layer 203(m+1) provided on the second electrode 205 side, and the electrons move to the EL layer 203(m+1) provided on the second electrode 205 side. Moves to the EL layer 203(m) provided on the electrode 201 side. Injected into the EL layer 203(m+1) The holes are recombined with the electrons injected from the second electrode 205 side, and the EL layer 203 ( The light-emitting material contained in the EL layer 203(m+1) emits light. The electrons injected into the EL layer 203(m) emit light. The electrons recombine with the holes injected from the first electrode 201 side and are contained in the EL layer 203(m). The luminescent material emits light. Therefore, the holes and electrons generated in the intermediate layer 207 are Light emission occurs in the different EL layers.

[0314] In addition, when the EL layers are provided in contact with each other, the same structure as the intermediate layer is formed between them. For example, a charge generating region may be provided on one side of the EL layer. When the light-emitting layer 14 is formed, an EL layer can be provided in contact with the surface of the light-emitting layer 14.

[0315] In addition, by making the emission color of each EL layer different, the light-emitting device as a whole can have a desired color. For example, in a light-emitting element having two EL layers, the first By making the emission color of the first EL layer and the emission color of the second EL layer complementary to each other, It is also possible to obtain a light-emitting element that emits white light as a whole. In other words, colors that are complementary to each other are obtained from materials that emit light. By mixing the emitted light, white light can be obtained. The same applies to the light emitting element.

[0316] 17(A) to (F) can be used in combination with each other. For example, FIG. F) An intermediate layer 207 may be provided between the second electrode 205 and the EL layer 203(n). .

[0317] Examples of materials that can be used for each layer are given below. Each layer is not limited to a single layer. Two or more layers may be laminated.

[0318] <anode> The electrode (first electrode 201) functioning as an anode is made of a conductive metal, an alloy, or a conductive material. In particular, the material having a large work function (4.0 For example, ITO, silicon or silicon oxide-containing materials are used. Indium tin oxide, indium zinc oxide, tungsten oxide and zinc oxide Indium oxide, graphene, gold, platinum, nickel, tungsten, chromium, molybdenum Nitrides of butene, iron, cobalt, copper, palladium, or metallic materials (e.g. titanium nitride) etc.

[0319] In addition, when the anode contacts the charge generating region, various conductive materials can be used without considering the magnitude of the work function. For example, aluminum, silver, and alloys containing aluminum can be used. There can be.

[0320] <cathode> The electrode functioning as a cathode (second electrode 205) is made of a conductive metal, an alloy, or a conductive material. In particular, the material having a small work function (3. For example, it is preferable to use a material that belongs to Group 1 or Group 2 of the periodic table. Elements that cause oxidation (e.g., alkali metals such as lithium and cesium, calcium, strontium, etc.) Alkaline earth metals such as magnesium, alloys containing these elements (e.g. Mg-Ag , Al-Li), europium, ytterbium and other rare earth metals, Examples of materials that can be used include alloys of tantalum, aluminum, and silver.

[0321] In addition, when the cathode is in contact with the charge generating region, various conductive materials can be used without considering the magnitude of the work function. For example, ITO, indium containing silicon or silicon oxide, Tin oxide and the like can also be used.

[0322] The light-emitting element has a conductive film on one side, either the anode or the cathode, that transmits visible light, and the other side that reflects visible light. Alternatively, both the anode and the cathode may be conductive films that transmit visible light. A certain configuration is possible.

[0323] The conductive film that transmits visible light is, for example, indium oxide, ITO, indium zinc oxide, The insulating layer can be formed of zinc oxide, zinc oxide doped with gallium, or the like. Silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt Metallic materials such as copper, palladium, and titanium, alloys containing these metallic materials, or Therefore, nitrides of metal materials (for example, titanium nitride) can also be formed thin enough to have light transmission properties. Also, a laminated film of the above materials can be used as the conductive layer. For example, by using a laminated film of an alloy of silver and magnesium and ITO, it is possible to increase the electrical conductivity. In addition, graphene or the like may be used.

[0324] The conductive film that reflects visible light is made of, for example, aluminum, gold, platinum, silver, nickel, tungsten, etc. Metallic materials such as zinc, chromium, molybdenum, iron, cobalt, copper, or palladium; An alloy containing these metal materials can be used. In addition, aluminum and titanium may be added. Aluminum alloys such as aluminum-nickel alloys, aluminum-neodymium alloys, etc. Alloys containing palladium (aluminum alloys), silver-copper alloys, silver-palladium-copper alloys, silver The electrode can be formed using an alloy containing silver, such as an alloy of silver and magnesium. Gold is preferred because of its high heat resistance. By laminating the oxide film, the oxidation of the aluminum alloy film can be suppressed. Examples of materials for the metal oxide film include titanium and titanium oxide. A conductive film that transmits visible light and a film made of a metal material may be laminated. For example, a film made of silver and ITO may be laminated. A laminated film, a laminated film of an alloy of silver and magnesium and ITO, etc. can be used.

[0325] The electrodes may be formed by vapor deposition or sputtering. Formed using a discharge method such as the jet method, a printing method such as the screen printing method, or a plating method. It is possible.

[0326] In addition, a conductive oxide is formed by a sputtering method as a conductive film that transmits visible light. In this case, when the conductive oxide is formed in an atmosphere containing argon and oxygen, the conductive oxide has a light-transmitting property. It can be improved.

[0327] In addition, when a conductive oxide film is formed on an EL layer, a conductive oxide film containing argon with a reduced oxygen concentration is used. A first conductive oxide film formed under an atmosphere containing argon and oxygen, and a second conductive oxide film formed under an atmosphere containing argon and oxygen. When the second conductive oxide film is laminated, damage to the EL layer during film formation can be reduced. In particular, the argon gas used in forming the first conductive oxide film is It is preferable that the purity of the gas is high, for example, that the dew point is -70°C or less, preferably -100°C or less. It is preferable to use argon gas of this order.

[0328] <Hole injection layer 301> The hole injection layer 301 is a layer containing a substance with high hole injection properties.

[0329] Examples of materials with high hole injection properties include molybdenum oxide, vanadium oxide, and ruthenium oxide. Metal oxides such as tungsten oxide, manganese oxide, etc., and phthalocyanine oxide, etc. Phthalocyanine (abbreviation: HPc), copper(II) phthalocyanine (abbreviation: CuPc), etc. Compounds of the nin series can be used.

[0330] In addition, poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenyl Polymer compounds such as poly(3,4-ethylenediamine) (abbreviation: PVTPA) and poly(3,4-ethylenediamine) Poly(dithiophene) / poly(styrenesulfonic acid) (PEDOT / PSS) and other acid-added A polymer compound can be used.

[0331] The hole injection layer 301 may also be used as a charge generating region. When the charge generation region is the charge generation region, various conductive materials can be used for the anode without considering the work function. The materials constituting the charge generating region will be described later.

[0332] <Hole transport layer 302> The hole transport layer 302 is a layer containing a substance with a high hole transport property.

[0333] The material having a high hole transporting property may be any material having a higher hole transporting property than an electron transporting property. , 10 -6 cm 2 It is preferable that the material has a hole mobility of 0.1 V or more. For example, 4,4'-Bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NP B or α-NPD), 4-phenyl-4'-(9-phenylfluoren-9-yl)trimethyl Aromatic amine compounds such as phenylamine (abbreviation: BPAFLP), 4,4'-di(N-phenylamine) Rubazolyl)biphenyl (abbreviation: CBP), 9-[4-(10-phenyl-9-anthracene CzPA, 9-phenyl-3-[4 -(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: P Carbazole derivatives such as 2-tert-butyl-9,10-di(2-naphthyl) 9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), Aromatic compounds such as 9,10-diphenylanthracene (abbreviation: DNA) and 9,10-diphenylanthracene (abbreviation: DPAnth) Uses various compounds such as aromatic hydrocarbon compounds, polymer compounds such as PVK and PVTPA. It is possible.

[0334] <Light-emitting layer 303> The light-emitting layer 303 is made of a fluorescent compound that emits fluorescence or a phosphorescent compound that emits phosphorescence. This can be done.

[0335] Examples of fluorescent compounds that can be used in the light-emitting layer 303 include N,N'-bis[4 -(9H-carbazol-9-yl)phenyl]-N,N'-diphenylstilbene-4 ,4'-diamine (abbreviation: YGA2S), N-(9,10-diphenyl-2-anthryl )-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCAPA), Bren et al.

[0336] In addition, examples of phosphorescent compounds that can be used in the light-emitting layer 303 include bis[2-( 4',6'-Difluorophenyl)pyridinato-N,C 2’ ]Iridium(III) pico Linate (abbreviation: FIrpic), Tris(2-phenylpyridinato-N,C 2’ ) Ili Ir(ppy)3, (acetylacetonato)bis(3,5- Dimethyl-2-phenylpyrazinate)iridium(III) (abbreviation: Ir(mppr-M e) Organometallic complexes such as 2(acac)).

[0337] The light-emitting layer 303 is formed by dissolving the above-mentioned light-emitting organic compound (light-emitting substance, guest material) in another material. The host material may be a material in which the cations are dispersed. It is possible to obtain a LUMO level higher than that of the guest material and a highest occupied It is preferable to use a substance with a low orbital level (HOMO level).

[0338] By dispersing the guest material in the host material, crystallization of the light-emitting layer 303 is suppressed. In addition, it is possible to suppress concentration quenching caused by a high concentration of the guest material. can be done.

[0339] As the host material, the above-mentioned substances having high hole transport properties (e.g., aromatic amine compounds and carbene compounds) are used. and highly electron-transporting substances (e.g., quinoline or benzoxazole derivatives) described later. Metal complexes having a tetrahydrofuran skeleton, oxazole-based ligands or thiazole-based ligands Metal complexes) can be used. Specifically, tris(8-quinolinolato)aluminium complexes can be used. Al(III) (abbreviation: Alq), bis(2-methyl-8-quinolinolato)(4-phenyl Alphenolato)aluminum(III) (abbreviation: BAlq), and other metal complexes, Biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4- Triazole (abbreviation: TAZ), Bathophenanthroline (abbreviation: BPhen), Bathocu Heterocyclic compounds such as proine (abbreviation: BCP), CzPA, DNA, t-BuDNA, Condensed aromatic compounds such as DPAnth and aromatic amine compounds such as NPB can be used. can.

[0340] In addition, multiple host materials can be used. For example, rubrene can be used to suppress crystallization. A substance that suppresses crystallization, such as fluorine, may be further added. In order to make the transfer more efficient, NPB, Alq or the like may be further added.

[0341] In addition, by providing multiple light-emitting layers and making each layer emit a different color, As a whole, it is possible to obtain light of a desired color. For example, in a light-emitting device having two light-emitting layers, In the present invention, the luminescent color of the first luminescent layer and the luminescent color of the second luminescent layer are made to have a complementary color relationship. It is also possible to obtain a light emitting element that emits white light as a whole. The same applies to the case of a light emitting element having three or more.

[0342] <Electron transport layer 304> The electron transporting layer 304 is a layer containing a substance with a high electron transporting property.

[0343] As a substance having a high electron transporting property, an organic compound having a higher electron transporting property than a hole transporting property may be used. , especially, 10 -6 cm 2 It is preferable that the material has an electron mobility of .beta. / Vs or more.

[0344] Examples of the material with high electron transporting properties include quinoline or benzoate structures such as Alq and BAlq. Metal complexes with the benzoquinoline skeleton, etc., and bis[2-(2-hydroxyphenyl)benzoyl] xazolato]zinc (abbreviation: Zn(BOX)2), bis[2-(2-hydroxyphenyl) Benzothiazolato]zinc (abbreviated as Zn(BTZ)2) and other oxazoles and thiazoles Metal complexes having ligands such as TAZ, BPhen, and BC can also be used. P can also be used.

[0345] <Electron injection layer 305> The electron injection layer 305 is a layer containing a substance with high electron injection properties.

[0346] Examples of materials with high electron injection properties include lithium, cesium, calcium, and lithium fluoride. Alkali metals such as fluoride, cesium fluoride, calcium fluoride, lithium oxide, etc. Potassium earth metals or their compounds can be used. Also, erbium fluoride and other The above-mentioned rare earth metal compound constituting the electron transport layer 304 can be used. It is also possible to use a material that

[0347] <Charge Generation Region> The charge generation region constituting the hole injection layer and the charge generation region 308 are made of a material having a high hole transporting property. This is a region that contains an acceptor material (electron acceptor). The acceptor material is a hole transport material. It is preferable that the weight ratio of the highly resistant substance is 0.1 to 4.0. It is.

[0348] In addition, the charge generation region contains a substance with high hole transport properties and a substance with acceptor properties in the same film. In addition to the case where a layer containing a substance with high hole transport properties and a layer containing a substance with high hole transport properties are stacked, However, when the charge generating region is provided on the cathode side, a layer having a high hole transporting property is required. In the case of a laminated structure in which the layer containing the substance is in contact with the cathode and the charge generation region is provided on the anode side In the case of the second type, the layer containing the acceptor material is in contact with the anode.

[0349] As a material having a high hole transporting property, an organic compound having a higher hole transporting property than an electron transporting property may be used. , especially, 10 -6 cm 2 It is preferable that the organic compound has a hole mobility of .beta. / Vs or more. stomach.

[0350] Specifically, aromatic amine compounds such as NPB and BPAFLP, CBP, CzPA, and PCz Carbazole derivatives such as PA, t-BuDNA, DNA, aromatic hydrocarbons such as DPAnth The hole transport layer 302 may be made of a polymer such as PVK or PVTPA. As a material capable of transporting holes, any of the materials having a high hole-transporting property exemplified above can be used.

[0351] Acceptor substances include 7,7,8,8-tetracyano-2,3,5,6-tetracyano. Fluoroquinodimethane (abbreviation: F4-TCNQ), organic compounds such as chloranil, transition metals Oxides, such as oxides of metals belonging to groups 4 to 8 of the periodic table, can be mentioned. Specifically, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, Dendrimer, tungsten oxide, manganese oxide, and rhenium oxide are preferred due to their high electron-accepting properties. In particular, molybdenum oxide is preferred because it is stable in the air, has low hygroscopicity, and is easy to handle. It is nice.

[0352] <Electron injection buffer layer 306> The electron injection buffer layer 306 is a layer containing a material with high electron injection properties. The charge generating layer 306 facilitates the injection of electrons from the charge generating region 308 into the EL layer 203. The above-mentioned materials can be used as the material with high electron injection properties. The electron transport layer 306 may contain the above-mentioned substance having high electron transport properties and a donor substance.

[0353] <Electronic Relay Layer 307> In the electron relay layer 307, the acceptor material is extracted in the charge generation region 308. Accepts electrons quickly.

[0354] The electron-relay layer 307 contains a substance having a high electron-transporting property. Using phthalocyanine-based materials or metal complexes with metal-oxygen bonds and aromatic ligands is preferred.

[0355] Specific examples of the phthalocyanine-based material include CuPc, PhO-VOPc (Vanad yl 2,9,16,23-tetraphenoxy-29H,31H-phthal ocyanine) etc.

[0356] The metal complex having a metal-oxygen bond and an aromatic ligand is preferably a metal complex having a metal-oxygen double bond. It is preferable to use a metal complex in which the metal-oxygen double bond has acceptor properties. This makes it easier for electrons to move (become)

[0357] In addition, as the metal complex having the metal-oxygen bond and the aromatic ligand, a phthalocyanine-based material Fee is preferred.

[0358] As the above-mentioned phthalocyanine-based material, those having a phenoxy group are preferable. Specifically, a phthalocyanine derivative having a phenoxy group, such as PhO-VOPc, is preferred. Phthalocyanine derivatives having a phenoxy group are soluble in a solvent, and therefore are suitable for use as luminescent elements. It is easy to handle when forming a film, and the maintenance of the equipment used for film formation is easy. This has the advantage that

[0359] The electron relay layer 307 may further include the donor material described above. By incorporating a donor substance into 07, electrons can be easily transferred, making the light-emitting element more It becomes possible to operate the device at a low voltage.

[0360] The LUMO level of the material with high electron transport properties or the donor material is included in the charge generation region 308. The LUMO level of the acceptor material to be used and the electron transporting material having high electron transport properties contained in the electron transport layer 304 are The LUMO level of the material (or the electron relay layer 307 or the electron injection buffer layer 306) The LUMO level is set to be between -5.0 and the LUMO level of the adjacent EL layer 203. It is preferable that the electron relay layer 307 has a donor property. In the case of including a material, the accession number included in the charge generation region 308 is used as a material with high electron transport properties. It is possible to use a material that has a LUMO level higher than the acceptor level of the acceptor material. do.

[0361] The layers constituting the EL layer 203 and the intermediate layer 207 are formed by deposition (vacuum deposition). deposition method), transfer method, printing method, ejection method such as inkjet method and dispense method, The layer can be formed by a coating method such as a pin coat method.

[0362] This embodiment mode can be freely combined with other embodiment modes.

[0363] (Embodiment 8) In this embodiment, a semiconductor layer of a transistor included in a light-emitting device according to one embodiment of the present invention is An oxide semiconductor capable of forming an oxide semiconductor film will be described.

[0364] The oxide semiconductor used in the semiconductor layer of the transistor is at least indium (In). It is preferable that the alloy contains In and zinc (Zn). It is particularly preferable that the alloy contains In and Zn. In addition, it is preferable to have a stabilizer that strongly binds oxygen. The bilayers are gallium (Ga), tin (Sn), zirconium (Zr), hafnium (Hf) and tin (Tb). The alloy may contain at least one of halide (Hf) and aluminum (Al).

[0365] Other stabilizers include the lanthanides lanthanum (La) and cerium ( Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), hol Ho, Erbium, Thulium, Ytterbium, Ru The element may contain one or more of tetraethynyl ions (Te).

[0366] For example, In-Sn-Ga-Zn oxide, In-Ga-Zn oxide, In-Sn-Z n-based oxides, In-Zr-Zn-based oxides, In-Al-Zn-based oxides, Sn-Ga-Zn oxides, Al-Ga-Zn oxides, Sn-Al-Zn oxides, In-Hf-Zn In-La-Zn oxide, In-Ce-Zn oxide, In-Pr-Zn oxide Oxide, In-Nd-Zn oxide, In-Sm-Zn oxide, In-Eu-Zn oxide oxides, In-Gd-Zn oxides, In-Tb-Zn oxides, In-Dy-Zn oxides In-Ho-Zn oxides, In-Er-Zn oxides, In-Tm-Zn oxides , In-Yb-Zn oxide, In-Lu-Zn ​​oxide, In-Zn oxide, Sn- Zn-based oxide, Al-Zn-based oxide, Zn-Mg-based oxide, Sn-Mg-based oxide, In- Mg-based oxides, In-Ga-based oxides, In-based oxides, Sn-based oxides, Zn-based oxides, etc. It can be used.

[0367] In addition, for example, In-Ga-Zn oxide is a material containing In, Ga, and Zn as main components. The ratio of In, Ga, and Zn is not important.

[0368] In addition, as an oxide semiconductor, InMO3(ZnO) m Using materials expressed as (m>0) M may be one or more metal elements selected from Ga, Fe, Mn, and Co. Metal elements are shown. In addition, as an oxide semiconductor, In2SnO5(ZnO) n (n>0) The materials listed may be used.

[0369] For example, In:Ga:Zn=3:1:2, In:Ga:Zn=1:1:1, or In:Ga In-Ga-Zn oxide with an atomic ratio of Zn=2:2:1 and oxides with similar compositions Alternatively, In:Sn:Zn=1:1:1, In:Sn:Zn=2:1 In-Sn-Zn oxides having an atomic ratio of In:Sn:Zn=2:1:5 or In:Sn:Zn=3:5. It is advisable to use an oxide having a similar structure.

[0370] For example, the atomic ratio of In, Ga, and Zn is In:Ga:Zn=a:b:c(a+b+ The composition of the oxide with the atomic ratio of In:Ga:Zn=A:B:C (A+B+C =1), a, b, and c are in the vicinity of the oxide composition of formula (a-A) 2 +(b-B) 2 +(c-C) 2 ≦r 2 It means that the following is satisfied. For example, r can be set to 0.05. The same is true for other oxides.

[0371] However, it is not limited to these, and the required semiconductor characteristics (field effect mobility, threshold voltage, etc.) In order to obtain the required semiconductor characteristics, Carrier concentration, impurity concentration, defect density, atomic ratio of metal elements to oxygen, interatomic distance, density, etc. It is preferable to make the following appropriate.

[0372] In addition, a transistor using an oxide semiconductor for a semiconductor layer can be obtained by highly purifying the oxide semiconductor. As a result, the off-state current (here, the off-state current when the source potential is used as a reference) is calculated. The drain current when the potential difference with the gate potential is equal to or less than the threshold voltage is sufficiently low. For example, the purification of oxide semiconductors can be achieved by oxidizing hydrogen and hydroxyl groups during thermal film formation. By removing the metal oxide from the film by heating after film formation, By increasing the purity, it is possible to use In-Ga-Zn oxide for the channel region. The off-state current per channel width of the transistor is 1×10-24 A / μm(1yA / μ m) to 1×10 -22 It is possible to achieve a value of about A / μm (100yA / μm).

[0373] The oxide semiconductor film may have, for example, a non-single crystal structure. Axis Aligned Crystal), polycrystalline, microcrystalline, and amorphous parts. The amorphous part has a higher defect level density than the microcrystals and CAAC. The defect state density is higher than that of the oxide semiconductor having CAAC. Axis Aligned Crystalline Oxide Semiconductor It is called a uctor.

[0374] The oxide semiconductor film may include, for example, a CAAC-OS. The c-axis is oriented, and the a-axis and / or b-axis are not macroscopically aligned.

[0375] The oxide semiconductor film may have, for example, microcrystals. The microcrystalline oxide semiconductor film has a thickness of, for example, 1 nm to 10 nm. The film contains microcrystals (also called nanocrystals) of about 100 nm in size.

[0376] The oxide semiconductor film may have, for example, an amorphous portion. The amorphous oxide semiconductor film is a semiconductor in which the atomic arrangement is disordered. The amorphous oxide semiconductor film has no crystalline component. Alternatively, the amorphous oxide semiconductor film has a completely amorphous structure, for example. and has no crystalline parts.

[0377] Note that the oxide semiconductor film may be a CAAC-OS film, a microcrystalline oxide semiconductor film, or an amorphous oxide semiconductor film. The mixed film may be a film having, for example, an amorphous oxide semiconductor region and a microcrystalline oxide semiconductor region. The mixed film has a semiconductor region and a CAAC-OS region. A stack of an oxide semiconductor region, a microcrystalline oxide semiconductor region, and a CAAC-OS region. The structure may be

[0378] Note that the oxide semiconductor film may be, for example, single crystal.

[0379] The oxide semiconductor film has a plurality of crystal parts, and the c-axes of the crystal parts are aligned along a normal vector of a surface on which the crystal parts are formed. It is preferable that the crystal orientation of the crystals is parallel to the normal vector of the surface. The directions of the a-axis and the b-axis may be different between the oxide semiconductor films. An example is a CAAC-OS film.

[0380] The crystals in the CAAC-OS film are each sized to fit within a cube with one side less than 100 nm. In addition, transmission electron microscope (TEM) The observation image of the CAAC-OS film shows that The boundary between the crystalline regions is not clear. Therefore, the CAAC-OS film has the following characteristics: The decrease in electron mobility caused by grain boundaries is suppressed.

[0381] The crystal parts in the CAAC-OS film have c-axes that are normal vectors to the surface on which the CAAC-OS film is formed. The direction is parallel to the normal vector of the ab plane and perpendicular to the ab plane. When viewed from the direction perpendicular to the c-axis, the metal atoms are arranged in a triangular or hexagonal shape. In addition, between different crystal parts, metal atoms and oxygen atoms are arranged in a layered manner. The directions of the a-axis and the b-axis may be different. In this specification, when it is simply described as being vertical, , and the range of 80° to 100°, preferably 85° to 95°, is also included. In addition, when simply describing it as parallel, it is -10° or more and 10° or less, preferably -5° or more and 5° or less. °The following ranges are also included:

[0382] In the CAAC-OS film, the distribution of the crystal parts may not be uniform. In the process of forming the C-OS film, when crystal growth is performed from the surface side of the oxide semiconductor film, The proportion of crystalline parts may be higher near the surface than near the growth surface.

[0383] The c-axis of the crystal part in the CAAC-OS film is the normal vector of the surface on which the CAAC-OS film is formed. The shape of the CAAC-OS film is aligned parallel to the normal vector of the film or surface. Depending on the cross-sectional shape of the surface to be formed or the cross-sectional shape of the surface, the directions may differ from each other. In addition, the crystallization process such as heat treatment was performed when the film was formed or after the film was formed. Therefore, the c-axis of the crystal is determined by the orientation of the CAAC-OS film. The direction is aligned to be parallel to the normal vector of the forming surface or the normal vector of the surface.

[0384] The electrical characteristics of transistors using CAAC-OS films change when exposed to visible or ultraviolet light. Therefore, the transistor has high reliability.

[0385] This embodiment mode can be freely combined with other embodiment modes.

[0386] (Embodiment 9) In this embodiment, electronic devices and lighting devices to which the light-emitting device of one embodiment of the present invention is applied will be described. This will be explained using FIG.

[0387] The light-emitting device according to one embodiment of the present invention has flexibility and can be torn when an external physical force is applied thereto. A reliable device that prevents damage to transistors and / or organic EL elements caused by bending or curving. Therefore, by applying the light emitting device, it is possible to reduce the risk of bending or curving. It is possible to realize electronic devices with high reliability.

[0388] The electronic device may be, for example, a television device (also called a television or television receiver). (c), computer monitors, digital cameras, digital video cameras, digital Photo frames, mobile phones (also called mobile phones or mobile phone devices), portable game machines, Examples include portable information terminals, audio playback devices, and large game machines such as pachinko machines.

[0389] The light-emitting device of one embodiment of the present invention can be used for an inner or outer wall of a house or a building, or for an interior of a car. It is also possible to incorporate it along the curved surface of the interior or exterior.

[0390] FIG. 18A shows an example of a mobile phone. A mobile phone 7400 includes a housing 7401. In addition to the display unit 7402, an operation button 7403, an external connection port 7404, The mobile phone 7400 includes a speaker 7405, a microphone 7406, and the like. The display portion 7402 is manufactured using an optical device.

[0391] In the mobile phone 7400 shown in FIG. 18A, when a user touches a display portion 7402 with a finger or the like, information is displayed. You can also make calls, enter text, or do any other kind of An operation can be performed by touching the display portion 7402 with a finger or the like.

[0392] In addition, by operating the operation button 7403, the power can be turned on and off, and the display unit 7402 can be You can change the type of image displayed. For example, from the email composition screen, You can switch to the menu screen.

[0393] Here, the light-emitting device of one embodiment of the present invention is incorporated in the display portion 7402. As a result, a highly reliable mobile phone can be provided with a curved display section.

[0394] FIG. 18B shows an example of a wristband-type portable display device. 00 includes a housing 7101, a display unit 7102, an operation button 7103, and a transmission / reception device 7104. Equipped with.

[0395] The portable display device 7100 can receive a video signal by a transmitting / receiving device 7104. Video can be displayed on the display unit 7102. Audio signals can also be sent to other receiving devices. It is also possible.

[0396] In addition, the operation button 7103 can be used to turn the power on and off and to switch the image to be displayed. , or adjust the volume of the audio.

[0397] Here, the light-emitting device of one embodiment of the present invention is incorporated in the display portion 7102. As a result, a highly reliable portable display device can be provided that has a curved display portion.

[0398] 18(C) to (E) show examples of the lighting device. 210 and the lighting device 7220 each include a base 720 having an operation switch 7203. 1 and a light emitting part supported by a base part 7201.

[0399] The lighting device 7200 shown in FIG. 18(C) includes a light-emitting unit 7202 having a wavy light-emitting surface. This makes it a highly designed lighting device.

[0400] The light-emitting portion 7212 of the lighting device 7210 shown in FIG. 18(D) has two convexly curved The light emitting parts are arranged symmetrically. It can illuminate the direction.

[0401] The lighting device 7220 shown in FIG. 18(E) includes a light-emitting portion 7222 that is curved in a concave shape. Therefore, in order to collect light emitted from the light emitting unit 7222 on the front surface of the lighting device 7220, It is suitable for brightly lighting an area.

[0402] In addition, the light-emitting units of the lighting devices 7200, 7210, and 7220 Since it is flexible, the light-emitting part can be made of plastic materials or movable frames. The light emitting surface of the light emitting portion may be freely curved depending on the application.

[0403] In the above, the illumination device in which the light-emitting unit is supported by the base is illustrated. The housing can be fixed to the ceiling or hung from the ceiling. The surface can be curved, so the light-emitting surface can be curved concavely to illuminate a specific area. It can also illuminate an entire room by curving the light-emitting surface convexly.

[0404] Here, the light emitting device according to one embodiment of the present invention is incorporated in each light emitting section. It is possible to provide a lighting device having a curved light emitting surface and high reliability.

[0405] FIG. 19A shows an example of a portable display device. The display device 7300 has a housing 7 301, display unit 7302, operation button 7303, drawer member 7304, control unit 7305 Equipped with.

[0406] The display device 7300 is a flexible display unit wound in a roll in a cylindrical housing 7301. Equipped with 7102.

[0407] In addition, the display device 7300 can receive a video signal through the control unit 7305. The control unit 7305 is equipped with a battery. In addition, the control unit 7305 is provided with a terminal unit for connecting a connector, and image signals and power can be transmitted via wires. It may also be configured to supply the power directly from an external source.

[0408] In addition, the operation button 7303 can be used to turn the power on and off and to switch the image to be displayed. etc. can be carried out.

[0409] FIG. 19B shows a state in which the display unit 7302 is pulled out by a pull-out member 7304. In this state, an image can be displayed on the display unit 7302. The operation button 7303 arranged on the surface of the housing 7301 allows easy operation with one hand. In addition, as shown in FIG. 19A, the operation button 7303 can be placed in the center of the housing 7301. By placing it close to one side, it can be easily operated with one hand.

[0410] Note that the display unit 7302 is fixed so that the display surface of the display unit 7302 becomes flat when the display unit 7302 is pulled out. In order to secure the display portion 7302 in place, a frame for reinforcing the display portion 7302 may be provided on the sides of the display portion 7302.

[0411] In addition to this configuration, a speaker is provided on the housing, and the device can be operated by receiving an audio signal together with the video signal. The configuration may be such that audio is output.

[0412] The light-emitting device of one embodiment of the present invention is incorporated in the display portion 7302. Since the unit 7302 is a flexible and reliable display device, the display device 7300 A lightweight and highly reliable display device can be obtained.

[0413] Note that the above-described electronic devices and lighting devices can be provided with a light-emitting device according to one embodiment of the present invention. It goes without saying that there is no particular limitation.

[0414] This embodiment mode can be freely combined with other embodiment modes. EXAMPLES

[0415] In this example, a light-emitting device according to one embodiment of the present invention was manufactured, and a transistor included in the light-emitting device was The results of evaluating the characteristics will be described below.

[0416] In this example, Sample a, which is a light-emitting device according to one embodiment of the present invention, and Comparative Example Sample a and sample b were fabricated. Sample a was fabricated using a first flexible substrate 101 and a second flexible substrate 111. A planarization layer 105 and a transistor 103 provided on one side of the planarization layer 105 are provided between the planarization layer 105 and the transistor 103. The organic EL element 107 provided on the other surface side of the planarizing layer 105 is bonded to the pair of substrates. The comparative sample b is a pair of glass substrates (flexible In the space surrounded by the adhesive layer, a planarization layer, a transistor, and a and an organic EL element. The space is an inert atmosphere.

[0417] First, the manufacturing process of the sample a will be described. In this embodiment, the manufacturing process will be described with reference to FIG. .

[0418] First, a silicon oxynitride film having a thickness of 200 nm is formed on a glass substrate 501. The film was then washed with a 0.5% aqueous solution of hydrogen fluoride. This can improve the adhesion between the base film and the peeling layer 503 to be formed later.

[0419] Next, a tungsten film having a thickness of 30 nm is formed as a peeling layer 503 on the base film. A layer to be peeled 505 was formed on 503 (FIG. 6(A)). In this embodiment, the layer to be peeled 505 is It includes an insulating film, a transistor 103, a planarizing layer 105, an organic EL element 107, and the like.

[0420] As the layer to be peeled 505, an insulating film was first formed on the peeling layer 503. Silicon oxynitride film with a thickness of 600 nm, silicon nitride film with a thickness of 200 nm, A silicon oxynitride film having a thickness of 140 nm, a silicon nitride oxide film having a thickness of 100 nm, and an oxide film having a thickness of 100 nm were A silicon nitride film was laminated in this order. Then, it was heated at 480°C for 1 hour in a nitrogen atmosphere. The sample was then washed with a 0.5% aqueous solution of hydrogen fluoride.

[0421] Next, the transistor 103 was formed on the insulating film. A tungsten film with a thickness of 200 nm is formed, and the tungsten is then photolithographically A mask is formed on the silicon film, and a part of the tungsten film is etched using the mask. A gate electrode was formed.

[0422] Next, a gate insulating film was formed on the gate electrode. A silicon nitride film and a silicon oxynitride film having a thickness of 50 nm were laminated in this order.

[0423] Next, an oxide semiconductor film was formed so as to overlap with the gate electrode with the gate insulating film interposed therebetween. A 35-nm-thick oxide semiconductor film was formed on the gate insulating film by sputtering, and then photolithography was performed. A mask is formed over the oxide semiconductor film by a lithography process, and the oxide semiconductor film is Part of the semiconductor film was etched to form an oxide semiconductor film.

[0424] The oxide semiconductor film was formed by sputtering a target of In:Ga:Zn=1:1:1 (atomic number The target was argon at a flow rate of 50 sccm and oxygen at a flow rate of 50 sccm. The gas was supplied to the reaction chamber of the sputtering device as a sputtering gas, and the pressure in the reaction chamber was kept at 0.7 The temperature was controlled to 5 Pa and a direct current of 5 kW was supplied. The substrate temperature during the experiment was set to 170°C.

[0425] After that, the specimen was heat-treated at 450℃ for 1 hour in a nitrogen atmosphere, and then cooled in a nitrogen and oxygen atmosphere. Then, heat treatment was carried out at 450° C. for 1 hour.

[0426] Next, a part of the gate insulating film is etched to expose the gate electrode, and then the oxide semiconductor film is A pair of electrodes (source electrode and drain electrode) were formed in contact with each other. A conductive film was formed over the oxide semiconductor film. A 400 nm thick aluminum film and a 100 nm thick titanium film are formed in this order. Then, a mask is formed on the conductive film by a photolithography process. The conductive film was partially etched using a etch mask to form a pair of electrodes.

[0427] Next, a 150 W high-frequency power source of 27.12 MHz was used to power the upper electrode installed in the reaction chamber. The oxide semiconductor film was exposed to oxygen plasma generated by supplying high frequency power.

[0428] Next, a protective film was formed over the oxide semiconductor film and the pair of electrodes. A first oxide insulating film, a second oxide insulating film, and a nitride insulating film were formed.

[0429] First, a silicon oxynitride film with a thickness of 50 nm is formed as a first oxide insulating film, and then a second oxide A silicon oxynitride film having a thickness of 400 nm was formed as the insulating film.

[0430] Next, heat treatment is performed to remove water, nitrogen, hydrogen, and the like from the first oxide insulating film and the second oxide insulating film. Here, heat treatment was performed in a nitrogen and oxygen atmosphere at 350° C. for 1 hour.

[0431] Next, the substrate is moved to a reduced pressure processing chamber and heated at 350° C., and then a second oxide insulating film is formed on the substrate. A nitride insulating film was formed. Here, a silicon nitride film with a thickness of 100 nm was used as the nitride insulating film. was formed.

[0432] Next, a part of the protective film was etched to form an opening for exposing a part of the pair of electrodes.

[0433] Next, a planarization layer 105 was formed on the protective film. In this example, after the composition was applied onto the protective film, Then, exposure and development are performed to form a planarization layer 105 having openings that expose parts of the pair of electrodes. An acrylic resin film having a thickness of 1.5 μm was formed as the flattening layer 105. After that, a heat treatment was performed. The heat treatment was performed at a temperature of 250°C in a nitrogen-containing atmosphere. I went for an hour.

[0434] Next, a conductive film was formed to electrically connect to a part of the pair of electrodes. The lower electrode 107 is a titanium film having a thickness of 50 nm and a thickness of 200 nm. Then, a 3 nm thick aluminum film and a 3 nm thick titanium film were formed. Indium tin oxide (ITSO) film was formed as an optical adjustment layer. The thickness of the ITSO film was The light-emitting elements in the color pixels are 82 nm, and the light-emitting elements in the green pixels are 45 nm. and for the light-emitting element included in the blue pixel, it was set to 5 nm.

[0435] Next, a partition wall was formed to cover the end of the conductive film. An imide resin film was formed. After that, a heat treatment was performed. The heat treatment was performed at a temperature of 250 The reaction was carried out at .degree. C. for 1 hour in a nitrogen atmosphere.

[0436] Next, a spacer having a reverse tapered shape was formed on the partition wall. The chip was formed using a negative photosensitive resin. After that, a heat treatment was performed. The treatment was carried out at a temperature of 250° C. in a nitrogen-containing atmosphere for 1 hour.

[0437] Next, an EL layer and an upper electrode were formed on the conductive film. The EL layer and the upper electrode were used to emit light from pixels of each color. The light-emitting element of this embodiment has a common structure to all optical elements. The EL layer is a fluorescent element having a blue light-emitting layer. a light-emitting unit and a phosphorescent unit having a green light-emitting layer and a red light-emitting layer. The upper electrode is a thin film of magnesium and silver co-deposited. The film was formed to a thickness of 15 nm. Furthermore, an ITO film with a thickness of 70 nm was formed on the upper electrode. In this way, the organic EL element 107 was formed.

[0438] In addition, a base film and a peeling layer 553 were formed over a glass substrate 551 for formation. The base film and the peeling layer 553 were fabricated in the same manner as the base film and the peeling layer 503 fabricated on the fabrication substrate 501. Then, a layer to be peeled 555 was formed on the peeling layer 553 (FIG. 6(B)). The layer to be peeled 555 includes an insulating film, a color filter, and the like.

[0439] As the layer to be peeled 555, an insulating film was first formed on the peeling layer 553. The insulating film was prepared in the same manner as in 505. Next, a color filter was formed on the insulating film. After that, a 20 nm thick ITO film was formed on the color filter. Since the material used for the adhesive layer 109 has a higher wettability than the color filter, When bonding the substrate 501 and the substrate 551, the generation of air bubbles can be suppressed, and the sealing of the element can be improved. This allows for good stopping.

[0440] Next, the fabrication substrate 501 and the fabrication substrate 551 were bonded together using the adhesive layer 109 (FIG. 6 (C)) For the adhesive layer 109, an ultraviolet light curing resin was used.

[0441] Then, the layer to be peeled 505 was peeled off from the formation substrate 501 using the peeling layer 503. The layer to be peeled off from the fabrication substrate 501 and exposed is attached to the peeled layer 505 by using the adhesive layer 123. The flexible substrate 101 was attached (FIG. 6(D)). Similarly, the peeled layer 553 was used to peel the layer 5 The substrate 55 was peeled off from the substrate 551. A second flexible substrate 111 was attached to the release layer 555 using an adhesive layer 187 (FIG. 6(E) The first flexible substrate 101 and the second flexible substrate 111 are made of a plastic film having a thickness of 20 μm. The first flexible substrate 101 and the second flexible substrate 111 are made of a thermal expansion film. The substrate has a thermal conductivity of 10 ppm / K or less, and is not easily deformed even when heat is applied. For the adhesive layer 187, an ultraviolet light curing resin was used.

[0442] Finally, FPC4505 was attached to each electrode of the input / output terminal section using anisotropic conductive material.

[0443] In this manner, sample a of this example was prepared.

[0444] On the other hand, in the comparative sample b, the transistor was directly attached to the glass substrate (without a release layer). A transistor 103, a planarizing layer 105, and an organic EL element 107 were formed. The opposing substrate and the supporting substrate are bonded together under a reduced pressure atmosphere using the The planarization layer 105, the organic EL element 107, the color filter, etc. were sealed. A hardening resin was used, and a glass substrate with a color filter was used as the opposing substrate. Then, an FPC was attached to each electrode of the input / output terminal section using an anisotropic conductive material. A comparative sample b was prepared.

[0445] The results of Vg-Id characteristics of the transistor in sample a and the transistor in comparative sample b The results are shown in Figure 20. The results for sample a are shown by a thick solid line, and the results for comparative sample b are shown by a thin solid line. In this experiment, the FPC terminals of each sample were connected to a measuring instrument and the measurements were taken. The channel length and width are L / W=3 nm / 1000 nm, and the silicon oxide film ( The thickness of the gate insulating film, calculated based on a dielectric constant of 4.1, was 100 nm.

[0446] From the results in FIG. 20, the characteristics of the transistors in sample a and the transistors in comparative sample b Therefore, by applying one embodiment of the present invention, The present invention provides a flexible light-emitting device that is as reliable as conventional non-flexible light-emitting devices. It has been shown that it can be done. [Explanation of symbols]

[0447] 101 First flexible substrate 103 Transistor 105 Planarization layer 107 Organic EL element 109 Adhesive layer 111 Second flexible substrate 121 Base film 123 Adhesive layer 131 Gate electrode 133 Gate insulating film 135 Semiconductor Layer 137a conductive layer 137b Conductive layer 141 Insulating film 143 Transistor 145 Transistor 147 Transistor 151 First planarization layer 153 Second Planarization Layer 155 Wiring 157 Color Filter 161 Bulkhead 171 First electrode 173 EL layer 175 Second Electrode 181 Color Filter 183 Black Matrix 185 Base film 187 Adhesive layer 201 First electrode 203 EL layer 203a First EL layer 203b Second EL layer 205 Second electrode 207 Middle Class 211 Transistor 212 Transistor 213 Transistor 214 Transistor 216 Insulating Layer 217 Insulating Layer 218 Insulating Layer 219 Insulating Layer 221 Color Filter 222 Black Matrix 223 Insulating Layer 250 Display device 270 Display device 271 Display section 272 Scanning line driver circuit 273 Signal Line Driver Circuit 274 External connection terminal 275 FPC 276 Connectors 290 Lighting Equipment 293 Extraction electrode 297 Extraction Electrode 299 Insulating Layer 301 Hole injection layer 302 Hole transport layer 303 Light-emitting layer 304 Electron transport layer 305 Electron injection layer 306 Electron injection buffer layer 307 Electronic Relay Layer 308 Charge generation area 400 Light Emitting Device 401 Substrate 403 First electrode 405 EL layer 407 Second Electrode 409 Insulating Layer 410 Light emitting element 411 First protective layer 412 Second layer of protection 413 The Third Layer of Protection 414 The Fourth Layer of Protection 415 The Fifth Layer of Protection 420 Element Layer 450 Light Emitting Device 460 Light Emitting Device 501 Preparation Board 503 Peeling layer 505 Peeling layer 507 Temporary support substrate 509 Peeling adhesive 551 Preparation Board 553 Peeling layer 555 Peeling layer 601a First release layer 601b Second release layer 603 Insulation Layer 604 Buffer layer 606 Gate electrode 608 Gate Insulation Layer 610 Semiconductor layer 612a Source electrode 612b Drain electrode 614 First insulating layer 616 Second insulating layer 618 1st electrode 620 Layer containing organic compounds 622 2nd electrode 624 Bulkhead 630 Light emitting element 650 Transistors 651 Transistor 652 Transistor 657 Terminal electrode 662 Buffer Layer 663 Passivation Layer 664 Light-shielding film 666 Color Filter 668 Overcoat 670 Adhesive layer 700a 1st organic layer 700b 2nd organic layer 901 First board 902 Second board 903 3rd board 4502 Pixel section 4503 Signal line driver circuit 4503a Signal line driver circuit 4503b Signal line driver circuit 4504 Scanning line driver circuit 4504a Scanning line driver circuit 4504b Scanning line driver circuit 4505 FPC 4601 Terminal section 4602 Pixel section 4603 Signal line circuit section 4605 FPC 7100 Portable display devices 7101 Case 7102 Display section 7103 Operation button 7104 Transmitting and receiving equipment 7200 Lighting Equipment 7201 Daibu 7202 Light emitting part 7210 Lighting equipment 7212 Light emitting part 7220 Lighting Equipment 7222 Light emitting part 7300 display device 7301 Case 7302 Display section 7303 Operation button 7304 Materials 7305 Control Unit 7400 Mobile Phone 7401 Case 7402 Display section 7403 Operation button 7404 External connection port 7405 Speaker 7406 Mike

Claims

[Claim 1] Between one surface of the first flexible substrate and one surface of the second flexible substrate, A planarization layer; and A transistor provided on one surface side of the planarization layer; a light-emitting element provided in contact with the other surface of the planarization layer and including a first electrode electrically connected to the transistor, a layer containing a light-emitting organic compound on the first electrode, and a second electrode on the layer containing a light-emitting organic compound; an adhesive layer that adheres the first flexible substrate and the second flexible substrate to each other; A light-emitting device, wherein a thickness A from the other side of the first flexible substrate to the other side of the planarization layer is 0.8 to 1.2 times a thickness B from the other side of the planarization layer to the other side of the second flexible substrate.

Images