Display device

Abstract

To provide a structure for causing H2O to be contained in an oxide semiconductor layer.SOLUTION: A semiconductor device comprises: an insulation layer on a first conductive layer; a first oxide semiconductor layer on the insulation layer; a second oxide semiconductor layer on the insulation layer; a second conductive layer on the first oxide semiconductor layer; a third conductive layer on the first oxide semiconductor layer; an inorganic insulation layer on the second conductive layer and on the third conductive layer; and a resin layer on the inorganic insulation layer. The first oxide semiconductor layer has a region overlapping the first conductive layer, and the resin layer does not contact the first oxide semiconductor layer, and the resin layer has a part which contacts the second oxide semiconductor layer inside a hole formed in the inorganic insulation layer.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The technical field relates to semiconductor devices. [Background technology]

[0002] Patent Document 1 describes a transistor having an oxide semiconductor layer.

[0003] Paragraph 0012 of Patent Document 1 states that "hydrogen has both of the two factors that induce carriers. Therefore, the substance containing the hydrogen element can purify the oxide semiconductor layer to be closer to the i-type. It can be said that it is an element that interferes with the structure.

[0004] Paragraph 0013 of Patent Document 1 states that "substances containing hydrogen elements include, for example, hydrogen, water, and hydroxide. It is described that "these compounds are oxides, hydrides, etc."

[0005] Patent Document 1 describes a method for manufacturing a transistor by incorporating a substance containing a hydrogen element in an oxide semiconductor layer. It is described that the threshold voltage shifts to the negative side. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2011-142311 A Summary of the Invention [Problem to be solved by the invention]

[0007] As described in Patent Document 1, H2O (water) purifies the oxide semiconductor layer and converts it into I It is a molecule that prevents the molecule from recreating its shape.

[0008] However, the present inventors found that there is an advantage to deliberately including H2O in the oxide semiconductor layer. I thought.

[0009] Therefore, the invention disclosed below provides a structure for incorporating H2O into an oxide semiconductor layer. The primary objective of the Company is to provide

[0010] A second object of the present invention is to provide a semiconductor device having a novel structure.

[0011] A third object is to effectively utilize the space where no active layer is formed.

[0012] In addition, as described in Patent Document 1, H (hydrogen) highly purifies the oxide semiconductor layer. This element prevents the crystal from approaching type I.

[0013] However, the inventors believe that there is an advantage to intentionally including H in the oxide semiconductor layer. I thought.

[0014] Therefore, the invention disclosed below provides a structure for incorporating H into an oxide semiconductor layer. The fourth objective is to

[0015] The invention disclosed below can achieve at least one of the first to fourth objects. That would be good. [Means for solving the problem]

[0016] For example, an inorganic insulating layer is provided over the first oxide semiconductor layer and the second oxide semiconductor layer.

[0017] For example, holes are provided in the inorganic insulating layer.

[0018] For example, a resin layer is provided on an inorganic insulating layer.

[0019] Then, the resin layer is disposed inside the hole without contacting the first oxide semiconductor layer. The oxide semiconductor layer 2 is brought into contact with the oxide semiconductor layer 2.

[0020] The content of H2O in the resin layer is much higher than the content of H2O in the inorganic insulating layer.

[0021] When the resin layer comes into contact with the oxide semiconductor layer, H2O in the resin layer is transferred to the oxide semiconductor layer. It moves easily inside.

[0022] In addition, the inorganic insulating layer has a function of blocking H2O.

[0023] Therefore, the content of H2O in the second oxide semiconductor layer is set to be the same as that of H2O in the first oxide semiconductor layer. The content of O can be increased.

[0024] That is, at least a part of the second oxide semiconductor layer and at least a part of the resin layer are in contact with each other. This makes it possible for H2O to be contained in the second oxide semiconductor layer. .

[0025] Here, the first oxide semiconductor layer is used, for example, as an active layer of a transistor.

[0026] The active layer is a semiconductor layer having a region where a channel can be formed (channel formation region). This is the body layer.

[0027] Since the first oxide semiconductor layer and the resin layer are not in contact with each other, the threshold voltage of the transistor is It is possible to prevent the voltage from shifting to the negative side.

[0028] On the other hand, the second oxide semiconductor layer can be used for the following purposes, for example.

[0029] For example, when the second oxide semiconductor layer is used as at least a part of the wiring, Since the content of H2O in the oxide semiconductor layer can be increased, the resistance of the second oxide semiconductor layer can be increased. The rate can be reduced.

[0030] For example, when the second oxide semiconductor layer is used as at least a part of an electrode, Since the content of H2O in the oxide semiconductor layer can be increased, the resistance of the second oxide semiconductor layer can be increased. The rate can be reduced.

[0031] For example, when the second oxide semiconductor layer is used as at least a part of a resistor element, the second Since the content of H2O in the oxide semiconductor layer can be increased, the second oxide semiconductor layer The resistivity can be reduced.

[0032] For example, when the second oxide semiconductor layer is used as an active layer of a transistor, Since the content of H2O in the oxide semiconductor layer can be increased, The threshold voltage of the transistor having the second oxide semiconductor layer and the The values ​​of the threshold voltage and can be different.

[0033] The first objective is to provide a structure for incorporating H2O into an oxide semiconductor layer. do.

[0034] Therefore, in view of the first object, the use of the second oxide semiconductor layer is not limited to the use exemplified above. It is clear that this cannot be achieved.

[0035] When the second oxide semiconductor layer is used as at least a part of a wiring or when the second oxide semiconductor When the oxide semiconductor layer is used as at least a part of an electrode, H (hydrogen) in the second oxide semiconductor layer In order to increase the content of H, a substance containing H may be contained in the second oxide semiconductor layer.

[0036] By including a substance containing H in the second oxide semiconductor layer, The resistivity can be reduced.

[0037] The method for incorporating the substance containing H in the second oxide semiconductor layer is, for example, Methods include, but are not limited to, on-doping and ion implantation.

[0038] For example, ion doping or ion implantation of H2, H2O, PH3, B2H6, etc. There is a law.

[0039] By the way, H2O released from the second oxide semiconductor layer is absorbed in or on the inorganic insulating layer. In some cases, the conductive particles may move underneath the first oxide semiconductor layer and reach the first oxide semiconductor layer.

[0040] Although the amount of H2O moving in the inorganic insulating layer or below the inorganic insulating layer is small, This may affect the electrical characteristics of a transistor having a semiconductor layer.

[0041] Therefore, a third oxide semiconductor layer is provided between the first oxide semiconductor layer and the second oxide semiconductor layer. It is preferable to provide such a function.

[0042] By absorbing H2O into the third oxide semiconductor layer, the first oxide semiconductor layer is This can reduce the amount of H2O that is delivered.

[0043] When the third oxide semiconductor layer is in contact with the resin layer, the hydrogen released from the third oxide semiconductor layer The H2O may reach the first oxide semiconductor layer.

[0044] Therefore, it is preferable that the third oxide semiconductor layer is not in contact with the resin layer.

[0045] A second object is to provide a semiconductor device having a novel structure.

[0046] In order to achieve the second object, the semiconductor layer is not limited to an oxide semiconductor layer. A layer containing silicon or the like may also be used.

[0047] The third purpose is to effectively utilize the space in which no active layer is formed.

[0048] By forming a second oxide semiconductor layer for a specific purpose, the active layer is not formed. Space can be utilized effectively.

[0049] For example, the second oxide semiconductor layer can be used as at least part of a wiring.

[0050] For example, the second oxide semiconductor layer can be used as at least a part of an electrode.

[0051] For example, the second oxide semiconductor layer can be used as at least a part of a resistor element. .

[0052] The use of the second oxide semiconductor layer is not limited to the above-mentioned examples.

[0053] In addition, in order to achieve the third object, the semiconductor layer is not limited to an oxide semiconductor layer, and the semiconductor layer A layer containing silicon or the like may be used as the insulating film.

[0054] To achieve the fourth object, a layer containing hydrogen (H) is provided.

[0055] The hydrogen-containing layer is not in contact with the first oxide semiconductor layer, and the hydrogen-containing layer is It is in contact with the oxide semiconductor layer.

[0056] The hydrogen-containing layer contains more H than the inorganic insulating layer.

[0057] The layer containing hydrogen can be an insulating layer, a semiconductor layer, a conductive layer, or the like.

[0058] For example, after forming a predetermined layer (insulating layer, semiconductor layer, conductive layer, etc.), H By incorporating a substance containing hydrogen, a layer containing hydrogen can be formed.

[0059] For example, there are methods such as ion doping or ion implantation of a substance containing H, but these are limited. do not have.

[0060] For example, by forming a film using a substance containing H as part of the film formation gas, a layer containing hydrogen can be formed. can be formed.

[0061] The film formation method includes, but is not limited to, a sputtering method, a CVD method, and the like.

[0062] Substances containing H include, but are not limited to, H2, H2O, PH3, and B2H6. do not have.

[0063] When the hydrogen-containing layer comes into contact with the oxide semiconductor layer, H in the hydrogen-containing layer is converted to an oxide semiconductor layer. They easily migrate into the semiconductor layer.

[0064] Therefore, the H content in the second oxide semiconductor layer is set to be equal to the H content in the first oxide semiconductor layer. It can be larger compared to the amount.

[0065] That is, at least a part of the second oxide semiconductor layer and at least a part of the layer containing hydrogen By contacting the second oxide semiconductor layer, H can be contained in the second oxide semiconductor layer. do.

[0066] Here, the first oxide semiconductor layer is used, for example, as an active layer of a transistor.

[0067] The active layer is a semiconductor layer having a region where a channel can be formed (channel formation region). This is the body layer.

[0068] Since the first oxide semiconductor layer and the layer containing hydrogen are not in contact with each other, the transistor can be formed without any problem. This makes it possible to prevent the threshold voltage from shifting to the negative side.

[0069] On the other hand, the second oxide semiconductor layer can be used for the following purposes, for example.

[0070] For example, when the second oxide semiconductor layer is used as at least a part of the wiring, Since the content of H in the oxide semiconductor layer can be increased, the resistivity of the second oxide semiconductor layer can be increased. It can be lowered.

[0071] For example, when the second oxide semiconductor layer is used as at least a part of an electrode, Since the content of H in the oxide semiconductor layer can be increased, the resistivity of the second oxide semiconductor layer can be increased. It can be lowered.

[0072] For example, when the second oxide semiconductor layer is used as at least a part of a resistor element, the second Since the content of H in the oxide semiconductor layer can be increased, the resistance of the second oxide semiconductor layer can be increased. The rate can be reduced.

[0073] For example, when the second oxide semiconductor layer is used as an active layer of a transistor, Since the content of H in the oxide semiconductor layer can be increased, The threshold voltage of the transistor having the second oxide semiconductor layer and the threshold The value of the voltage and can be different values.

[0074] A fourth object is to provide a structure for incorporating H into an oxide semiconductor layer.

[0075] Therefore, in view of the fourth object, the use of the second oxide semiconductor layer is not limited to the exemplified uses. It is clear that this cannot be achieved.

[0076] When H in the second oxide semiconductor layer is released, It may be released in a state bound to O.

[0077] Therefore, H 2 O may be released from the second oxide semiconductor layer.

[0078] Then, the H2O released from the second oxide semiconductor layer is absorbed in or on the inorganic insulating layer. In some cases, the conductive particles may move underneath the first oxide semiconductor layer and reach the first oxide semiconductor layer.

[0079] Although the amount of H2O moving in the inorganic insulating layer or below the inorganic insulating layer is small, This may affect the electrical characteristics of a transistor having a semiconductor layer.

[0080] Therefore, a third oxide semiconductor layer is provided between the first oxide semiconductor layer and the second oxide semiconductor layer. It is preferable to provide such a function.

[0081] By absorbing H2O into the third oxide semiconductor layer, the first oxide semiconductor layer is This can reduce the amount of H2O that is delivered.

[0082] When the third oxide semiconductor layer is in contact with the layer containing hydrogen, The released H2O may reach the first oxide semiconductor layer.

[0083] Therefore, the third oxide semiconductor layer is preferably not in contact with the layer containing hydrogen.

[0084] The present invention is capable of achieving at least one of the following first to fourth objects: Here is an example:

[0085] For example, a substrate may have a first conductive layer on the substrate, an insulating layer on the first conductive layer, and the insulating layer may be a first oxide semiconductor layer on the insulating layer; a second oxide semiconductor layer on the insulating layer; A second conductive layer is provided on a first oxide semiconductor layer, and a third conductive layer is provided on the first oxide semiconductor layer. an inorganic insulating layer on the second conductive layer and on the third conductive layer; A resin layer is provided on an insulating layer, and the first oxide semiconductor layer is provided in a region overlapping the first conductive layer. The resin layer is not in contact with the first oxide semiconductor layer, and the resin layer is The insulating layer has a portion in contact with the second oxide semiconductor layer inside the hole. The semiconductor device is characterized by the above.

[0086] For example, a substrate may have a first conductive layer on the substrate, an insulating layer on the first conductive layer, and the insulating layer may be a first oxide semiconductor layer on the insulating layer; a second oxide semiconductor layer on the insulating layer; A third oxide semiconductor layer is provided on an insulating layer, and a second conductive layer is provided on the first oxide semiconductor layer. a third conductive layer over the first oxide semiconductor layer, The insulating film has an inorganic insulating layer on the third conductive layer, a resin layer on the inorganic insulating layer, and the first oxide The oxide semiconductor layer has a region overlapping the first conductive layer, and the resin layer has a first oxide The resin layer is not in contact with the semiconductor layer, and is formed on the inside of the hole of the inorganic insulating layer. a portion in contact with the second oxide semiconductor layer, and the resin layer is in contact with the third oxide semiconductor layer The substrate has a first region, a second region, and a third region, and the first oxide The oxide semiconductor layer has a region overlapping with the first region, and the second oxide semiconductor layer has a second region overlapping the third oxide semiconductor layer; the third region being located between the first region and the second region; The semiconductor device is characterized by the above.

[0087] For example, a substrate may have a first conductive layer on the substrate, an insulating layer on the first conductive layer, and the insulating layer may be a first layer on the insulating layer, a second layer on the insulating layer, and a second conductive layer on the first layer; a third conductive layer on the first layer, and a second conductive layer on the second conductive layer and the third conductive layer. a resin layer on the inorganic insulating layer; and the second layer comprises indium, gallium, zinc and oxygen; The first layer has an area overlapping the first conductive layer, and the resin layer has a The resin layer is not in contact with the first layer, and is disposed inside the holes of the inorganic insulating layer. The semiconductor device is characterized by having a portion in contact with the second layer.

[0088] For example, a substrate may have a first conductive layer on the substrate, an insulating layer on the first conductive layer, and the insulating layer may be a first layer on the insulating layer, a second layer on the insulating layer, and a third layer on the insulating layer; a second conductive layer on the first layer; a third conductive layer on the first layer; an inorganic insulating layer on the second conductive layer and the third conductive layer, and a resin layer on the inorganic insulating layer. the first layer comprises indium, gallium, zinc, and oxygen, and the second layer comprises the third layer comprising indium, gallium, zinc and oxygen; The first layer includes zinc and oxygen, the first layer has an area overlapping the first conductive layer, and the resin The resin layer is not in contact with the first layer, and the resin layer is disposed inside the holes of the inorganic insulating layer. the resin layer has a portion in contact with the second layer, the resin layer does not contact the third layer, The substrate has a first region, a second region, and a third region, and the first layer has a first region. the second layer has an area overlapping the second area, the third layer has an area overlapping the second area, The layer has an area overlapping the third area, and the third area is a region overlapping the first area and the The semiconductor device is characterized by being located between the second region. Effect of the Invention

[0089] At least a part of the oxide semiconductor layer is in contact with at least a part of the resin layer. In this case, H2O can be contained in the oxide semiconductor layer.

[0090] A novel semiconductor device can be provided.

[0091] By forming an oxide semiconductor layer for a specific purpose (for example, an electrode, wiring, resistance element, etc.), This makes it possible to effectively utilize the space where no active layer is formed.

[0092] At least a part of the oxide semiconductor layer and at least a part of the layer containing hydrogen are in contact with each other. Therefore, H can be contained in the oxide semiconductor layer. [Brief description of the drawings]

[0093] [Figure 1] 1 is an example of a semiconductor device. [Diagram 2] 1 is an example of a semiconductor device. [Diagram 3] 1 shows an example of a method for manufacturing a semiconductor device. [Figure 4] 1 illustrates an example of a method for manufacturing a semiconductor device. [Diagram 5] 1 illustrates an example of a method for manufacturing a semiconductor device. [Figure 6] 1 shows an example of a method for manufacturing a semiconductor device. [Figure 7] 1 illustrates an example of a method for manufacturing a semiconductor device. [Figure 8] 1 illustrates an example of a method for manufacturing a semiconductor device. [Figure 9] 1 illustrates an example of a method for manufacturing a semiconductor device. [Figure 10] 1 illustrates an example of a method for manufacturing a semiconductor device. [Figure 11] 1 illustrates an example of a method for manufacturing a semiconductor device. [Figure 12] 1 shows an example of a method for manufacturing a semiconductor device. [Figure 13] 1 illustrates an example of a method for manufacturing a semiconductor device. [Figure 14] 1 is an example of a semiconductor device. [Figure 15] 1 is an example of a semiconductor device. [Figure 16] 1 is an example of a semiconductor device. [Figure 17] 1 is an example of a semiconductor device. [Figure 18] 1 is an example of a semiconductor device. [Figure 19] 1 is an example of a semiconductor device. [Figure 20] 1 is an example of a semiconductor device. [Figure 21] 1 is an example of a semiconductor device. [Figure 22] 1 is an example of a semiconductor device. [Diagram 23] 1 is an example of a semiconductor device. [Figure 24] 1 is an example of a semiconductor device. [Diagram 25] 1 is an example of a semiconductor device. [Figure 26] 1 is an example of a semiconductor device. [Figure 27] 1 is an example of a semiconductor device. [Figure 28] 1 is an example of a semiconductor device. [Figure 29] 1 is an example of a semiconductor device. [Diagram 30] 1 is an example of a semiconductor device. [Diagram 31] 1 is an example of a semiconductor device. [Diagram 32] 1 is an example of a semiconductor device. [Diagram 33] 1 is an example of a semiconductor device. [Diagram 34] 1 is an example of a semiconductor device. [Diagram 35] 1 is an example of a semiconductor device. [Diagram 36] 1 is an example of a semiconductor device. [Figure 37] 1 is an example of a semiconductor device. [Figure 38] 1 is an example of a semiconductor device. [Figure 39] 1 is an example of a semiconductor device. [Diagram 40] 1 is an example of a semiconductor device. [Diagram 41] 1 is an example of a semiconductor device. [Diagram 42] 1 is an example of a semiconductor device. [Diagram 43] 1 is an example of a semiconductor device. [Diagram 44] 1 is an example of a semiconductor device. [Diagram 45] 1 is an example of a semiconductor device. [Diagram 46] 1 is an example of a semiconductor device. [Figure 47] 1 is an example of a semiconductor device. [Figure 48] 1 is an example of a semiconductor device. [Figure 49] 1 is an example of a semiconductor device. [Figure 50] 1 is an example of a semiconductor device. [Figure 51] 1 is an example of a semiconductor device. [Figure 52] 1 is an example of a semiconductor device. [Figure 53] 1 is an example of a semiconductor device. [Figure 54] 1 is an example of a semiconductor device. [Figure 55] 1 is an example of a semiconductor device. [Figure 56] 1 is an example of a semiconductor device. [Figure 57] 1 is an example of a semiconductor device. [Figure 58] 1 is an example of a semiconductor device. [Figure 59] 1 is an example of a semiconductor device. [Figure 60] 1 is an example of a semiconductor device. [Figure 61] 1 is an example of a semiconductor device. [Figure 62] 1 is an example of a semiconductor device. [Figure 63] 1 is an example of a semiconductor device. [Figure 64] 1 is an example of a semiconductor device. [Figure 65] 1 is an example of a semiconductor device. [Figure 66] 1 is an example of a semiconductor device. [Figure 67] 1 is an example of a semiconductor device. [Figure 68] 1 is an example of a semiconductor device. [Figure 69] 1 is an example of a semiconductor device. [Figure 70] 1 is an example of a semiconductor device. [Figure 71] 1 is an example of a semiconductor device. [Figure 72] 1 is an example of a semiconductor device. [Figure 73] 1 is an example of a semiconductor device. [Figure 74] 1 is an example of a semiconductor device. [Figure 75] 1 is an example of a semiconductor device. [Figure 76] 1 is an example of a semiconductor device. [Figure 77] 1 is an example of a semiconductor device. [Figure 78] 1 is an example of a semiconductor device. [Figure 79] 1 is an example of a semiconductor device. [Figure 80] 1 is an example of a semiconductor device. [Figure 81] 1 is an example of a semiconductor device. [Figure 82] 1 is an example of a semiconductor device. [Figure 83] 1 is an example of a semiconductor device. [Figure 84] 1 is an example of a semiconductor device. [Figure 85] 1 is an example of a semiconductor device. [Figure 86] 1 is an example of a semiconductor device. [Figure 87] 1 is an example of a semiconductor device. [Figure 88] 1 is an example of a semiconductor device. [Figure 89] 1 is an example of a semiconductor device. [Figure 90] 1 is an example of a semiconductor device. [Figure 91] 1 is an example of a semiconductor device. [Figure 92] 1 is an example of a semiconductor device. [Figure 93] 1 is an example of a semiconductor device. [Figure 94] 1 is an example of a semiconductor device. [Figure 95] 1 is an example of a semiconductor device. [Figure 96] 1 is an example of a semiconductor device. [Figure 97] 1 is an example of a semiconductor device. [Figure 98] 1 is an example of a semiconductor device. [Figure 99] 1 is an example of a semiconductor device. [Figure 100] 1 is an example of a semiconductor device. [Figure 101] 1 is an example of a semiconductor device. [Figure 102] 1 is an example of a semiconductor device. [Figure 103] 1 is an example of a semiconductor device. [Figure 104] 1 is an example of a semiconductor device. [Figure 105] 1 is an example of a semiconductor device. [Fig. 106] 1 is an example of a semiconductor device. [Figure 107] 1 is an example of a semiconductor device. [Figure 108] 1 is an example of a semiconductor device. [Figure 109] 1 is an example of a semiconductor device. [Figure 110] 1 is an example of a semiconductor device. [Figure 111] 1 is an example of a semiconductor device. [Figure 112] 1 is an example of a semiconductor device. [Figure 113] 1 is an example of a semiconductor device. [Fig. 114] 1 is an example of a semiconductor device. [Fig. 115] 1 is an example of a semiconductor device. [Fig. 116] 1 is an example of a semiconductor device. [Fig. 117] 1 is an example of a semiconductor device. [Fig. 118] 1 is an example of a semiconductor device. [Figure 119] 1 is an example of a semiconductor device. [Figure 120] 1 is an example of a semiconductor device. [Figure 121] 1 is an example of a semiconductor device. [Figure 122] 1 is an example of a semiconductor device. [Figure 123] 1 is an example of a semiconductor device. [Figure 124] 1 is an example of a semiconductor device. [Fig. 125] 1 is an example of a semiconductor device. [Fig. 126] 1 is an example of a semiconductor device. [Figure 127] 1 is an example of a semiconductor device. [Figure 128] 1 is an example of a semiconductor device. [Figure 129] 1 is an example of a semiconductor device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0094] The embodiments will be described in detail with reference to the drawings.

[0095] However, the form and details of the invention may be modified in various ways without departing from the spirit of the invention. This will be readily understood by those skilled in the art.

[0096] Therefore, the scope of the invention should not be construed as being limited to the description of the following embodiments. do not have.

[0097] In the configurations described below, the same parts or parts having similar functions are referred to as the same parts. The same reference numerals or hatchings are used in common among different drawings, and repeated explanations thereof will be omitted. do.

[0098] In addition, the following embodiments can be implemented in combination in part or in whole as appropriate.

[0099] (Embodiment 1) FIG. 1 shows an example of a semiconductor device having an oxide semiconductor layer 31 and an oxide semiconductor layer 32. In FIG.

[0100] A conductive layer 21 is provided on a substrate 10 .

[0101] At least a portion of the conductive layer 21 can function as a gate electrode of a transistor. do.

[0102] An insulating layer may be provided between the substrate 10 and the conductive layer 21 .

[0103] An insulating layer 30 is provided on the conductive layer 21 .

[0104] At least a part of the insulating layer 30 can function as a gate insulating film of a transistor. Cut.

[0105] An oxide semiconductor layer 31 is provided on an insulating layer 30 .

[0106] At least a part of the oxide semiconductor layer 31 can function as an active layer of a transistor. can.

[0107] A conductive layer 41 is provided over the oxide semiconductor layer 31 .

[0108] A conductive layer 42 is provided over the oxide semiconductor layer 31 .

[0109] At least a part of the conductive layer 41 is connected to one of the source electrode and the drain electrode of the transistor. It can function as such.

[0110] At least a part of the conductive layer 42 is connected to the other of the source electrode or the drain electrode of the transistor. It can function as such.

[0111] An oxide semiconductor layer 32 is provided on an insulating layer 30 .

[0112] At least a part of the oxide semiconductor layer 32 is used as, for example, a wiring, an electrode, a resistor element, or a transistor. It can function as an active layer of a transistor, etc.

[0113] However, the function of the oxide semiconductor layer 32 is to function as a wiring, an electrode, a resistor element, or an active layer of a transistor. The present invention is not limited to a layer.

[0114] An inorganic insulating layer 5 is formed at least on the oxide semiconductor layer 31, the conductive layer 41, and the conductive layer 42. 0.

[0115] FIG. 1 illustrates the case where the inorganic insulating layer 50 is also provided on the oxide semiconductor layer 32.

[0116] The inorganic insulating layer 50 has pores.

[0117] A resin layer 60 is provided on the inorganic insulating layer 50 .

[0118] The resin layer 60 is not in contact with the oxide semiconductor layer 31 .

[0119] The resin layer 60 has a portion inside the hole that is in contact with the oxide semiconductor layer 32 .

[0120] Since the resin layer 60 is not in contact with the oxide semiconductor layer 31, the oxide semiconductor layer 31 The content of H2O in the oxide semiconductor layer 31 is made smaller than the content of H2O in the oxide semiconductor layer 32. This can be done.

[0121] The oxide semiconductor layer 31 can function as an active layer of a transistor. This can prevent the threshold voltage of the transistor from shifting to the negative side.

[0122] The resin layer 60 has a portion in contact with the oxide semiconductor layer 32, whereby the oxide semiconductor The content of H2O in the layer 32 can be made larger than that in the oxide semiconductor layer 31. Cut.

[0123] The content of H2O in the oxide semiconductor layer 32 is higher than that in the oxide semiconductor layer 31. By increasing the thickness of the oxide semiconductor layer 32, the properties of the oxide semiconductor layer 32 can be made different from those of the oxide semiconductor layer 31. It can be used for.

[0124] For example, the resistivity of the oxide semiconductor layer 32 is set to be smaller than the resistivity of the oxide semiconductor layer 31. Therefore, the oxide semiconductor layer 32 can be used as at least a part of a wiring, an electrode, or a resistor element. It can be used.

[0125] For example, when the oxide semiconductor layer 32 is used as an active layer of a transistor, the oxide semiconductor Threshold voltage of the transistor having the layer 32 and the transistor having the oxide semiconductor layer 31 The threshold voltage of the transistor can be different from that of the transistor.

[0126] When the oxide semiconductor layer 32 is not an active layer of a transistor, the oxide semiconductor layer 32 is The area does not overlap with the area that can function as a contact electrode.

[0127] The region that can function as a gate electrode is the channel of the active layer of the transistor. This is the area that overlaps with the hole formation area.

[0128] In other words, when the oxide semiconductor layer 32 is not an active layer of a transistor, the oxide semiconductor layer 3 2 does not have a channel forming region.

[0129] 54 to 58 show examples of the oxide semiconductor layer 32. FIG.

[0130] FIG. 54 is an example of a diagram in which a conductive layer 43 is added to FIG.

[0131] At least a part of the oxide semiconductor layer 32 can function as a wiring.

[0132] At least a portion of the conductive layer 43 can function as a wiring.

[0133] One of the oxide semiconductor layer 32 and the conductive layer 43 can function as an auxiliary wiring.

[0134] FIG. 55 is an example of a drawing in which a conductive layer 22 is added to FIG.

[0135] At least a part of the oxide semiconductor layer 32 can function as one electrode of a capacitance element. can.

[0136] At least a part of the conductive layer 22 can function as the other electrode of the capacitance element.

[0137] FIG. 56 is an example of a diagram in which a conductive layer 43 and a conductive layer 44 are added to FIG.

[0138] At least a part of the oxide semiconductor layer 32 can function as a resistor of the resistor element. do.

[0139] At least a portion of the conductive layer 43 can function as one terminal of a resistive element.

[0140] At least a portion of the conductive layer 44 can function as the other terminal of the resistive element.

[0141] FIG. 57 is an example of a drawing in which the conductive layers 22, 43, and 44 are added to FIG. It is.

[0142] At least a part of the oxide semiconductor layer 32 can function as an active layer of a transistor. can.

[0143] At least a portion of the conductive layer 22 can function as a gate electrode of a transistor. do.

[0144] At least a part of the conductive layer 43 is connected to one of the source electrode and the drain electrode of the transistor. It can function as such.

[0145] At least a portion of the conductive layer 44 is connected to the other of the source electrode or the drain electrode of the transistor. It can function as such.

[0146] FIG. 58 is an example of a drawing in which holes are added to the resin layer 60 in FIG.

[0147] The resin layer 60 has a portion that contacts the oxide semiconductor layer 32 on the inside of the hole of the inorganic insulating layer 50. has a share.

[0148] The oxide semiconductor layer 32 has an exposed region inside the hole of the resin layer 60 .

[0149] The exposed areas are then available for application of a layer thereon.

[0150] Therefore, at least a part of the oxide semiconductor layer 32 functions as one electrode of the element. This can be done.

[0151] Examples of the element include, but are not limited to, a display element, a memory element, a capacitor element, and the like.

[0152] For example, when the element is a display element, at least a part of the oxide semiconductor layer 32 is a pixel electrode. It can function as:

[0153] The function of the oxide semiconductor layer 32 is not limited to one electrode of the element.

[0154] The oxide semiconductor layer 32 may be a wiring, an electrode, a resistor, an active layer, or the like.

[0155] The conductive layer 22 can be formed in the same step as the conductive layer 21 .

[0156] In addition, the conductive layer 43 can be formed in the same step as the conductive layers 41 and 42 .

[0157] In addition, the conductive layer 44 can be formed in the same step as the conductive layers 41 and 42 .

[0158] For example, FIG. 127 shows a structure in which a functional layer 55 is provided on the resin layer 60 in FIG. This is an example in which a conductive layer 70 is provided on top.

[0159] For example, in the case of a liquid crystal element, the functional layer 55 is a liquid crystal layer.

[0160] For example, in the case of an EL element, the functional layer 55 is a layer containing an organic compound.

[0161] For example, in the case of a capacitive element, the functional layer 55 is an insulating layer (dielectric layer).

[0162] In FIG. 127, the oxide semiconductor layer 32 can function as one electrode of the element. do.

[0163] In FIG. 127, conductive layer 70 can function as the other electrode of the element.

[0164] Although FIG. 127 shows an example in which the functional layer 55 is provided locally, it is also possible to form the functional layer 55 on the entire surface of the substrate. It may be provided in.

[0165] Although the conductive layer 70 is provided locally in FIG. 127, the conductive layer 70 may be provided over the entire surface of the substrate. It may be provided in.

[0166] When the functional layer 55 contains H2O and H, the resistance of the oxide semiconductor layer 32 can be reduced. This is preferable.

[0167] The amount of H2O and H in the functional layer 55 is preferably greater than the amount of H2O and H in the inorganic insulating layer 50. stomach.

[0168] FIG. 128 shows a structure in which the inorganic insulating layer 50 is left at the bottom of the hole in the resin layer 60 in FIG. In this example, a conductive layer 70 is provided on an inorganic insulating layer 50 and a resin layer 60 .

[0169] In FIG. 128, a resin layer 60 is formed on the inside of a hole provided in an inorganic insulating layer 50, and the resin layer 60 is formed on the oxide semiconductor. It is in contact with layer 32 .

[0170] In FIG. 128, the oxide semiconductor layer 32 functions as one electrode of a capacitor. can.

[0171] In FIG. 128, the conductive layer 70 can function as the other electrode of the capacitor element.

[0172] FIG. 129 shows the inorganic insulating layer 60 remaining at the bottom of the hole in the resin layer 60 in FIG. In this example, an insulating layer 56 is provided instead of the inorganic insulating layer 50. a resin layer 60 is provided on the insulating layer 56 and on the inorganic insulating layer 50; This can also be said to be an example in which a conductive layer 70 is provided on an insulating layer 56 .

[0173] The insulating layer 56 can function as a dielectric layer for the capacitive element.

[0174] When the insulating layer 56 contains H2O and H, the resistance of the oxide semiconductor layer 32 can be reduced. This is preferable.

[0175] The amount of H2O and H in the insulating layer 56 is preferably greater than the amount of H2O and H in the inorganic insulating layer 50. stomach.

[0176] In addition, in FIG. 127 to FIG. 129, if the conductive layer 70 has a light-transmitting property, A capacitor element can be manufactured.

[0177] In addition, in FIGS. 127 to 129, the dielectric layer of the capacitance element can be made thin. Therefore, the capacitance that can be stored in the capacitive element can be increased.

[0178] For example, the dielectric layers of the capacitance element (the functional layer 55, the inorganic insulating layer 50, the insulating layer 56, etc.) are formed using a resin It can be thinner than layer 60 .

[0179] For example, the dielectric layers (functional layer 55, insulating layer 56, etc.) of the capacitance element may be made thinner than the inorganic insulating layer 50. It can be made easier.

[0180] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0181] (Embodiment 2) For example, it is preferable to prevent H 2 O from entering the oxide semiconductor layer 31.

[0182] On the other hand, the oxide semiconductor layer 32 intentionally contains H2O.

[0183] Incidentally, H2O may move between the insulating layer 30 and the inorganic insulating layer 50.

[0184] Therefore, H2O released from the oxide semiconductor layer 32 is mixed with the insulating layer 30 and the inorganic insulating layer 50. 10 and may penetrate into the oxide semiconductor layer 31.

[0185] Although the amount of H2O that moves between the insulating layer 30 and the inorganic insulating layer 50 is small, This may affect the electrical properties of the transistor that includes layer 31 .

[0186] In addition, if the insulating layer 30 does not have a sufficient ability to block H2O, the insulating layer 30 (especially the insulating layer In some cases, H2O may move through the interface between the inorganic insulating layer 30 and the inorganic insulating layer 50.

[0187] Therefore, H2O released from the oxide semiconductor layer 32 moves through the insulating layer 30 and becomes an oxide There are cases where the particles penetrate into the semiconductor layer 31 .

[0188] Although the amount of H2O moving through the insulating layer 30 is very small, This may affect the electrical characteristics of the transistor.

[0189] In addition, if the inorganic insulating layer 50 does not have sufficient H2O blocking ability, In particular, H2O may move near the interface between the insulating layer 30 and the inorganic insulating layer 50.

[0190] Therefore, H2O released from the oxide semiconductor layer 32 moves through the inorganic insulating layer 50 and becomes an acid. In some cases, the impurities may penetrate into the compound semiconductor layer 31 .

[0191] Although the amount of H2O moving through the inorganic insulating layer 50 is very small, This may affect the electrical characteristics of the transistor.

[0192] Therefore, as shown in FIG. 2, an oxide semiconductor layer is formed between the oxide semiconductor layer 31 and the oxide semiconductor layer 32. It is preferable that the insulating layer 33 be provided.

[0193] Positions of the oxide semiconductor layer 31, the oxide semiconductor layer 32, and the oxide semiconductor layer 33 in FIG. Explain the relationship in detail.

[0194] A case where the substrate 10 has a first region, a second region, and a third region will be described.

[0195] The third region is located between the first region and the second region.

[0196] The oxide semiconductor layer 31 has a region overlapping with the first region.

[0197] The oxide semiconductor layer 32 has a region overlapping with the second region.

[0198] The oxide semiconductor layer 33 has a region overlapping with the third region.

[0199] A case where the resin layer 60 has a first region, a second region, and a third region will be described.

[0200] The third region is located between the first region and the second region.

[0201] The oxide semiconductor layer 31 has a region overlapping with the first region.

[0202] The oxide semiconductor layer 32 has a region overlapping with the second region.

[0203] The oxide semiconductor layer 33 has a region overlapping with the third region.

[0204] Move between the insulating layer 30 and the inorganic insulating layer 50, within the insulating layer 30, or within the inorganic insulating layer 50 By absorbing H2O into the oxide semiconductor layer 33, H The amount of 2O can be reduced.

[0205] In order to prevent H2O from moving from the oxide semiconductor layer 33 to the oxide semiconductor layer 31, It is preferable that the oxide semiconductor layer 33 is not in contact with the resin layer 60 .

[0206] The oxide semiconductor layer 33 may be in a state of being electrically connected to a wiring or an electrode.

[0207] The oxide semiconductor layer 33 is electrically isolated from the wiring or the electrode (floating state). state, electrically isolated state).

[0208] When the oxide semiconductor layer 33 is not an active layer of a transistor, the oxide semiconductor layer 33 is The area does not overlap with the area that can function as a contact electrode.

[0209] The region that can function as a gate electrode is the channel of the active layer of the transistor. This is the area that overlaps with the hole formation area.

[0210] In other words, when the oxide semiconductor layer 33 is not an active layer of a transistor, the oxide semiconductor layer 3 3 does not have a channel forming region.

[0211] The oxide semiconductor layer 33 may be an active layer of a transistor.

[0212] For example, a transistor that has little effect on circuit operation when the threshold voltage shifts to the negative side The oxide semiconductor layer 33 can be used as an active layer of the transistor (A). .

[0213] In addition, the threshold voltage shifts to the negative side, which has a large effect on the circuit operation. The oxide semiconductor layer 32 can be used as an active layer of the transistor (transistor (B)). .

[0214] For example, transistor (A) is a transistor used in a digital circuit. (B) can be a transistor used in an analog circuit.

[0215] For example, in the configuration shown in FIG. 43, transistor (A) is transistor Tr1, The transistor (B) can be the transistor Tr2.

[0216] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0217] (Embodiment 3) An example of a method for manufacturing a semiconductor device will be described (FIGS. 3 to 13).

[0218] A conductive layer 201 and a conductive layer 202 are formed on a substrate 100 (FIGS. 3 and 4).

[0219] FIG. 4A is an example of a cross-sectional view taken along line AB of FIG.

[0220] FIG. 4B is an example of a cross-sectional view of the CD cross section of FIG.

[0221] At least a portion of the conductive layer 201 can function as a gate electrode.

[0222] That is, the conductive layer 201 has a plurality of regions that can function as gate electrodes.

[0223] At least a part of the conductive layer 201 is a region capable of functioning as a gate electrode. It can function as wiring that electrically connects them.

[0224] At least a portion of the conductive layer 202 can function as a gate electrode.

[0225] That is, the conductive layer 202 has a plurality of regions that can function as gate electrodes.

[0226] At least a part of the conductive layer 202 is a region that can function as a gate electrode. It can function as wiring that electrically connects them.

[0227] An insulating layer may be provided between the substrate 100 and the conductive layer 201 .

[0228] An insulating layer may be provided between the substrate 100 and the conductive layer 202 .

[0229] Next, an insulating layer 300 is formed on the conductive layer 201 and the conductive layer 202. , an oxide semiconductor layer 301, an oxide semiconductor layer 302, an oxide semiconductor layer 303, an oxide semiconductor layer 304, an oxide semiconductor layer 305, an oxide semiconductor layer 306, an oxide semiconductor layer 311, The oxide semiconductor layer 312, the oxide semiconductor layer 313, the oxide semiconductor layer 314, and the oxide semiconductor layer 31 5, oxide semiconductor layer 316, oxide semiconductor layer 317, oxide semiconductor layer 318, oxide semiconductor Then, a body layer 319 is formed (FIGS. 5 and 6).

[0230] FIG. 6A is an example of a cross-sectional view taken along line AB of FIG.

[0231] FIG. 6B is an example of a cross-sectional view of the CD cross section of FIG.

[0232] Each of the oxide semiconductor layers 301 to 306 can serve as an active layer. It has a functional region.

[0233] Each of the oxide semiconductor layers 301 to 306 functions as a gate electrode. It has an area where it can overlap with the area where it can.

[0234] Each of the oxide semiconductor layers 311 to 319 is used as at least a part of the wiring. It has an area that can function as a

[0235] Next, conductive layer 401, conductive layer 402, conductive layer 403, conductive layer 411, conductive layer 412, conductive layer Then, a conductive layer 413, a conductive layer 414, a conductive layer 415, and a conductive layer 416 are formed (FIGS. 7 and 8).

[0236] FIG. 8A is an example of a cross-sectional view taken along line AB of FIG.

[0237] FIG. 8B is an example of a cross-sectional view of the CD cross section of FIG.

[0238] Each of the conductive layers 401 to 403 functions as at least a part of the wiring. It has areas where it can do this.

[0239] The conductive layers 401 to 403 are source and drain electrodes of the transistors, respectively. The endothelial cell has an area capable of functioning as one of the above.

[0240] Each of the conductive layers 411 to 416 functions as at least a part of the wiring. It has areas where it can do this.

[0241] The conductive layers 411 to 416 are source and drain electrodes of the transistors, respectively. The second region has an area capable of functioning as the other of the first region and the second region.

[0242] The positional relationship between the conductive layer and the oxide semiconductor layer will be described with reference to FIG. 8 as an example. The insulating film 314 has a region in contact with the oxide semiconductor layer 314 .

[0243] The oxide semiconductor layer 314 has a higher resistivity than the conductive layer 401. Since the oxide semiconductor layer 314 has a resistivity that allows a current to flow, can function as at least a part of the wiring.

[0244] The oxide semiconductor layers 311 to 313, the oxide semiconductor layers 315 to The semiconductor layer 319 has a function similar to that of the oxide semiconductor layer 314 .

[0245] In other words, the oxide semiconductor layers 311 to 319 each function as an auxiliary wiring. It can be done.

[0246] If the purpose is to form an auxiliary wiring, A semiconductor layer other than an oxide semiconductor layer may be used.

[0247] Examples of the semiconductor layer other than the oxide semiconductor layer include, but are not limited to, a layer containing silicon. .

[0248] Examples of the layer containing silicon include a silicon layer, a silicon germanium layer, and a silicon carbide layer. Etc., but are not limited to.

[0249] The shape of the semiconductor layer that can function as the auxiliary wiring is a shape having a longitudinal direction. is preferred.

[0250] The shape having a long length direction includes, but is not limited to, a rectangular shape, an elliptical shape, a polygonal shape, and the like. stomach.

[0251] Here, for example, the longitudinal direction of the semiconductor layer is defined as the first direction.

[0252] In addition, for example, the direction of current flow in the wiring electrically connected to the semiconductor layer is set as the second is defined as the direction of

[0253] When the first direction and the second direction are parallel, the angle between the first direction and the second direction is 0 degrees. be.

[0254] When the first direction and the second direction are perpendicular to each other, the angle between the first direction and the second direction is 90 degrees. It is.

[0255] The first direction (longitudinal direction) and the second direction (direction of current flow) are preferably approximately parallel to each other. I wish.

[0256] The first direction and the second direction are substantially parallel to each other, so that the contact surface between the auxiliary wiring and the wiring You can increase the sum.

[0257] The phrase "the first direction and the second direction are approximately parallel" means that the first direction and the second direction are approximately parallel to each other. The angle is defined as being greater than or equal to 0 degrees and less than 35 degrees.

[0258] The angle between the first direction and the second direction may be set to be equal to or greater than 35 degrees and equal to or less than 90 degrees.

[0259] A semiconductor layer that can function as an auxiliary wiring is provided between one of the two active layers and the other of the two active layers. By being located between the other, one of the two active layers and the other of the two active layers are electrically connected Therefore, the resistance value of the wiring that is connected to the semiconductor device can be reduced.

[0260] Next, an inorganic insulating layer 500 is formed on the plurality of transistors, and holes 5 are formed in the inorganic insulating layer 500. 61, hole 562, hole 563, hole 564, hole 565, hole 566, hole 567, hole 568, hole 5 69, contact hole 551, contact hole 552, contact hole 553, A contact hole 554, a contact hole 555, and a contact hole 556 are formed ( Figures 9 and 10).

[0261] FIG. 10A is an example of a cross-sectional view taken along line AB of FIG.

[0262] FIG. 10B is an example of a cross-sectional view of the CD cross section of FIG.

[0263] In the state shown in FIG. 10, the oxide semiconductor layers 311 to 319 are made of a substance containing H. The ions may be doped or implanted.

[0264] Substances containing H include, but are not limited to, H2, H2O, PH3, B2H6, etc.

[0265] Next, a resin layer 600 is formed on the inorganic insulating layer 500, and a plurality of contacts are formed on the resin layer 600. Form a hole (Figure 9, Figure 11).

[0266] FIG. 11A is an example of a cross-sectional view taken along line AB of FIG.

[0267] FIG. 11B is an example of a cross-sectional view of the CD cross section of FIG.

[0268] The hole may also be called an aperture or an opening.

[0269] The contact hole may also be called a hole, an opening, or an aperture.

[0270] In the embodiment shown in FIGS. 9 to 11, the inorganic insulating layer 500 is formed on the entire surface of the substrate. and a plurality of island-shaped inorganic insulating layers each covering a plurality of transistors may be formed. stomach.

[0271] However, the resin layer and the conductive layer have poor adhesion, so when the resin layer is brought into contact with the conductive layer, The fat layer may peel off.

[0272] When the conductive layer is a film containing a metal, the adhesion between the resin layer and the conductive layer is particularly poor.

[0273] Therefore, it is preferable that the contact area between the resin layer and the conductive layer is small.

[0274] Therefore, in order to reduce the contact area between the resin layer and the conductive layer, it is necessary to form a plurality of islands. 9 to 11 are preferable to a configuration in which an inorganic insulating layer having a lattice pattern is formed.

[0275] The positional relationship between the resin layer and the oxide semiconductor layer will be described with reference to FIGS. 10 and 11. Inside 564, the resin layer 600 has a portion in contact with the oxide semiconductor layer 314. .

[0276] On the other hand, since the transistor is covered with the inorganic insulating layer 500, the oxide semiconductor layer 301 , does not come into contact with the resin layer 600.

[0277] Next, a conductive layer 701, a conductive layer 702, a conductive layer 703, a conductive layer 704, Conductive layer 705, conductive layer 706, conductive layer 707, conductive layer 708, conductive layer 709, conductive layer 71 0, conductive layer 711, and conductive layer 712 are formed (FIGS. 12 and 13).

[0278] FIG. 13A is an example of a cross-sectional view taken along line AB of FIG.

[0279] FIG. 13B is an example of a cross-sectional view of the CD cross section of FIG.

[0280] Each of the conductive layers 701 to 712 can function as one electrode of the element. do.

[0281] The elements include, but are not limited to, a display element, a memory element, a capacitor element, and the like.

[0282] Display elements include, but are not limited to, liquid crystal elements, light-emitting elements (EL elements), electrophoretic elements, etc. I can't.

[0283] Memory elements include resistive memory, ferroelectric memory, magnetoresistive memory, and organic memory. Etc., but are not limited to.

[0284] The conductive layers 701 to 712 may have a light-transmitting property.

[0285] The conductive layers 701 to 712 may have a light-shielding property.

[0286] The conductive layers 701 to 712 may have reflectivity.

[0287] The oxide semiconductor layer has a light-transmitting property.

[0288] When one electrode of the element has a light-transmitting property and the element is a display element, It is preferable that the electrode overlaps the oxide semiconductor layer because the aperture ratio can be increased by overlapping the electrode with the oxide semiconductor layer.

[0289] The positional relationship between one electrode of the element and the oxide semiconductor layer will be described with reference to FIG. 13 as an example. At least a part of the conductive layer 705 and at least a part of the oxide semiconductor layer 314 overlap with each other. At least a part of the conductive layer 706 and at least a part of the oxide semiconductor layer 314 overlap with each other. is.

[0290] A functional layer is formed over the conductive layers 701 to 712.

[0291] The element has one electrode of the element, a functional layer, and the other electrode of the element.

[0292] For example, in the case of a liquid crystal element, the functional layer is a liquid crystal layer.

[0293] For example, in the case of an EL element, the functional layer is a layer containing an organic compound.

[0294] For example, in the case of a capacitive element, the functional layer is an insulating layer (dielectric layer).

[0295] The functional layer is not limited to the examples shown.

[0296] Next, the other electrode of the element is formed on the functional layer.

[0297] Next, the oxide semiconductor layer and the element are sealed as necessary to manufacture a semiconductor device. It can be manufactured.

[0298] The oxide semiconductor layer and the element can be sealed by providing a sealing body over the element. Cut.

[0299] Examples of the sealing body include, but are not limited to, a substrate and a sealing can.

[0300] It is preferable to have a sealant (sealing material) between the sealing body and the substrate.

[0301] Examples of the sealing material include adhesives containing organic materials, glass frits, etc. Not limited.

[0302] The sealing material is preferably disposed at a position overlapping the first predetermined region (sealing region) of the substrate. It is nice.

[0303] The oxide semiconductor layer is formed in a second predetermined region (element region (at least an area where an element is arranged) of the substrate. a driving circuit region (where at least a circuit for driving the element is arranged), and an element region the region between the gate region and the drive circuit region, the region outside the element region, the region outside the drive circuit region, etc.) It is preferable to arrange them in an overlapping position.

[0304] When the element is a display element, the element area is called a pixel area.

[0305] The element is preferably disposed in an element region.

[0306] The first predetermined area has a shape that surrounds the second predetermined area.

[0307] Since the first predetermined region has a shape surrounding the second predetermined region, The resin layer directly above is not in contact with the outside air (atmosphere).

[0308] The amount of H2O that moves to the oxide semiconductor layer can be controlled by adjusting the amount of H2O in the resin layer. It can be controlled.

[0309] On the other hand, when the resin layer directly above the oxide semiconductor layer comes into contact with the outside air (atmosphere), The H2O contained in the resin moves into the resin layer, causing the amount of H2O in the resin layer to fluctuate greatly. There is a saying.

[0310] Therefore, at least the resin layer directly above the oxide semiconductor layer is not in contact with the outside air (atmosphere). Therefore, the amount of H2O in the resin layer can vary greatly due to the influence of the outside air (atmosphere). This can prevent the following:

[0311] However, even if the resin layer is provided at a position overlapping both the first predetermined area and the second predetermined area, good.

[0312] When the resin layer is provided at a position overlapping both the first predetermined area and the second predetermined area, the resin The side of the resin layer is in contact with the outside air (atmosphere), but the distance between the side of the resin layer and the oxide semiconductor layer is large. So it's not a big problem.

[0313] On the other hand, the resin layer is provided so as not to overlap the first predetermined region, and the resin layer is provided so as not to overlap the second predetermined region. If the resin layer is provided at a position overlapping the above area, it is possible to prevent the resin layer from coming into contact with the outside air (atmosphere). This is preferable because

[0314] In some cases, the resin layer directly above the oxide semiconductor layer may be in contact with the outside air (atmosphere).

[0315] For example, when the oxide semiconductor layer functions as an electrode or a wiring, The more H2O that is absorbed, the better. Therefore, the resin layer directly above the oxide semiconductor layer is in contact with the outside air (atmosphere). There is no problem if you do.

[0316] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0317] (Embodiment 4) An example of the display device will be described.

[0318] FIG. 14 shows an example of a liquid crystal display device (a type of semiconductor device).

[0319] FIG. 14 shows a structure in which a liquid crystal layer 800, a conductive layer 900, and a substrate 110 are added to FIG. 13(A). It is a composition.

[0320] A conductive layer 900 is formed on the substrate 110 .

[0321] Liquid crystal layer 800 is sandwiched between conductive layer 706 and conductive layer 900 .

[0322] An alignment film may be provided between the conductive layer 706 and the liquid crystal layer 800 .

[0323] An alignment film may be provided between the conductive layer 900 and the liquid crystal layer 800 .

[0324] A color filter, a black matrix, etc. may be formed on the substrate 100 or the substrate 110. .

[0325] It is preferable to have a sealant between the substrate 100 and the substrate 110 .

[0326] The oxide semiconductor layer and the element are preferably disposed inside a region surrounded by a sealing material.

[0327] It is preferable that the resin layer is not exposed to the outside air (atmosphere).

[0328] FIG. 15 is an example of a circuit diagram of a liquid crystal display device (a type of semiconductor device).

[0329] The wiring G is electrically connected to the gate of the transistor Tr.

[0330] The wiring S is electrically connected to one of the source and the drain of the transistor Tr.

[0331] One electrode of the liquid crystal element LC is electrically connected to the other of the source or drain of the transistor Tr. is connected to

[0332] The relationship between FIG. 14 and FIG. 15 will be described.

[0333] At least a part of the conductive layer 201 functions as, for example, a gate electrode of a transistor Tr. It is possible.

[0334] At least a portion of the conductive layer 201 can function as a wiring G, for example.

[0335] At least a part of the insulating layer 300 functions as, for example, a gate insulating film of the transistor Tr. It can be done.

[0336] At least a part of the oxide semiconductor layer 301 is used as, for example, an active layer of a transistor Tr. It can function.

[0337] At least a portion of the conductive layer 401 is, for example, a source electrode or a drain electrode of the transistor Tr. The electrode can function as one electrode of the electrode.

[0338] At least a portion of the conductive layer 401 can function as a wiring S, for example.

[0339] At least a part of the conductive layer 411 is, for example, a source electrode or a drain electrode of the transistor Tr. The second electrode can function as the other of the first electrodes.

[0340] At least a part of the conductive layer 706 functions as, for example, one electrode of the liquid crystal element LC. It is possible.

[0341] At least a part of the liquid crystal layer 800 functions as, for example, a functional layer of the liquid crystal element LC. can be done.

[0342] At least a part of the conductive layer 900 functions as, for example, the other electrode of the liquid crystal element LC. It is possible.

[0343] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0344] (Embodiment 5) An example of the display device will be described.

[0345] Figure 16 shows a liquid crystal display device driven by FFS (Fringe Field Switching). This is an example of a semiconductor device.

[0346] FIG. 16 shows the insulating layer 510, the liquid crystal layer 800, the conductive layer 900, and the substrate 1 in FIG. This is a configuration with 10 added.

[0347] An insulating layer 510 is formed on the conductive layer 706 .

[0348] A conductive layer 900 is formed on the insulating layer 510 .

[0349] A liquid crystal layer 800 is sandwiched between the conductive layer 900 and the substrate 110 .

[0350] An alignment film may be provided between the conductive layer 900 and the liquid crystal layer 800 .

[0351] The conductive layer 900 may have holes.

[0352] An electric field is generated between the conductive layer 900 and the conductive layer 706, thereby controlling the liquid crystal layer. do.

[0353] A color filter, a black matrix, etc. may be formed on the substrate 100 or the substrate 110. .

[0354] It is preferable to have a sealant between the substrate 100 and the substrate 110 .

[0355] The oxide semiconductor layer and the element are preferably disposed inside a region surrounded by a sealing material.

[0356] It is preferable that the resin layer is not exposed to the outside air (atmosphere).

[0357] FIG. 18 is an example of a circuit diagram of a liquid crystal display device (a type of semiconductor device).

[0358] The wiring G is electrically connected to the gate of the transistor Tr.

[0359] The wiring S is electrically connected to one of the source and the drain of the transistor Tr.

[0360] One electrode of the liquid crystal element LC is electrically connected to the other of the source or drain of the transistor Tr. is connected to

[0361] The other electrode of the liquid crystal element LC is electrically connected to the line CL.

[0362] One electrode of the capacitance element C1 is electrically connected to the other of the source or drain of the transistor Tr. is connected to

[0363] The other electrode of the capacitance element C1 is electrically connected to the wiring CL.

[0364] The relationship between FIG. 16 and FIG. 18 will be described.

[0365] At least a part of the conductive layer 201 functions as, for example, a gate electrode of a transistor Tr. It is possible.

[0366] At least a portion of the conductive layer 201 can function as a wiring G, for example.

[0367] At least a part of the insulating layer 300 functions as, for example, a gate insulating film of the transistor Tr. It can be done.

[0368] At least a part of the oxide semiconductor layer 301 is used as, for example, an active layer of a transistor Tr. It can function.

[0369] At least a portion of the conductive layer 401 is, for example, a source electrode or a drain electrode of the transistor Tr. The electrode can function as one of the electrodes.

[0370] At least a portion of the conductive layer 401 can function as a wiring S, for example.

[0371] At least a part of the conductive layer 411 is, for example, a source electrode or a drain electrode of the transistor Tr. The second electrode can function as the other of the first electrodes.

[0372] At least a part of the conductive layer 706 functions as, for example, one electrode of the liquid crystal element LC. It is possible.

[0373] At least a part of the conductive layer 706 functions as, for example, one electrode of the capacitor C1. It is possible.

[0374] At least a part of the liquid crystal layer 800 functions as, for example, a functional layer of the liquid crystal element LC. can be done.

[0375] At least a part of the conductive layer 900 functions as, for example, the other electrode of the liquid crystal element LC. It is possible.

[0376] At least a part of the conductive layer 900 functions as, for example, the other electrode of the capacitance element C1. It is possible.

[0377] At least a portion of the conductive layer 900 can function as, for example, a wiring CL.

[0378] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0379] (Embodiment 6) An example of the display device will be described.

[0380] Figure 17 shows a liquid crystal display device driven by FFS (Fringe Field Switching). This is an example of a semiconductor device.

[0381] FIG. 17 shows the insulating layer 510, the liquid crystal layer 800, the conductive layer 900, and the substrate 1 in FIG. This is a configuration with 10 added.

[0382] A conductive layer 900 is formed on the resin layer 600 .

[0383] An insulating layer 510 is formed on the conductive layer 900 .

[0384] A conductive layer 706 is formed on the insulating layer 510 .

[0385] A liquid crystal layer 800 is sandwiched between the conductive layer 706 and the substrate 110 .

[0386] An alignment film may be provided between the conductive layer 706 and the liquid crystal layer 800 .

[0387] The conductive layer 706 may have holes.

[0388] An electric field is generated between the conductive layer 900 and the conductive layer 706, thereby controlling the liquid crystal layer. do.

[0389] A color filter, a black matrix, etc. may be formed on the substrate 100 or the substrate 110. .

[0390] It is preferable to have a sealant between the substrate 100 and the substrate 110 .

[0391] The oxide semiconductor layer and the element are preferably disposed inside a region surrounded by a sealing material.

[0392] It is preferable that the resin layer is not exposed to the outside air (atmosphere).

[0393] FIG. 18 is an example of a circuit diagram of a liquid crystal display device (a type of semiconductor device).

[0394] The wiring G is electrically connected to the gate of the transistor Tr.

[0395] The wiring S is electrically connected to one of the source and the drain of the transistor Tr.

[0396] One electrode of the liquid crystal element LC is electrically connected to the other of the source or drain of the transistor Tr. is connected to

[0397] The other electrode of the liquid crystal element LC is electrically connected to the line CL.

[0398] One electrode of the capacitance element C1 is electrically connected to the other of the source or drain of the transistor Tr. is connected to

[0399] The other electrode of the capacitance element C1 is electrically connected to the wiring CL.

[0400] The relationship between FIG. 17 and FIG. 18 will be described.

[0401] At least a part of the conductive layer 201 functions as, for example, a gate electrode of a transistor Tr. It is possible.

[0402] At least a portion of the conductive layer 201 can function as a wiring G, for example.

[0403] At least a portion of the insulating layer 300 functions as, for example, a gate insulating film of the transistor Tr. It can be done.

[0404] At least a part of the oxide semiconductor layer 301 is used as, for example, an active layer of a transistor Tr. It can function.

[0405] At least a portion of the conductive layer 401 is, for example, a source electrode or a drain electrode of the transistor Tr. The electrode can function as one of the electrodes.

[0406] At least a portion of the conductive layer 401 can function as a wiring S, for example.

[0407] At least a part of the conductive layer 411 is, for example, a source electrode or a drain electrode of the transistor Tr. The second electrode can function as the other of the first electrodes.

[0408] At least a part of the conductive layer 706 functions as, for example, one electrode of the liquid crystal element LC. It is possible.

[0409] At least a part of the conductive layer 706 functions as, for example, one electrode of the capacitor C1. It is possible.

[0410] At least a part of the liquid crystal layer 800 functions as, for example, a functional layer of the liquid crystal element LC. can be done.

[0411] At least a part of the conductive layer 900 functions as, for example, the other electrode of the liquid crystal element LC. It is possible.

[0412] At least a part of the conductive layer 900 functions as, for example, the other electrode of the capacitance element C1. It is possible.

[0413] At least a portion of the conductive layer 900 can function as, for example, a wiring CL.

[0414] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0415] (Embodiment 7) FIG. 19 shows the oxide semiconductor layer 321, the oxide semiconductor layer 322, and the oxide semiconductor layer 323 in FIG. layer 323, an oxide semiconductor layer 324, an oxide semiconductor layer 325, an oxide semiconductor layer 326, and an oxide an oxide semiconductor layer 327; an oxide semiconductor layer 328; an oxide semiconductor layer 329; and an oxide semiconductor layer 33 10 is an example of a drawing in which an oxide semiconductor layer 331 and an oxide semiconductor layer 332 are added.

[0416] FIG. 20 is an example of a cross-sectional view taken along the line EF of FIG.

[0417] The positional relationship between the oxide semiconductor layers will be described with reference to FIGS.

[0418] The oxide semiconductor layer 321 is provided between the oxide semiconductor layer 311 and the oxide semiconductor layer 301. .

[0419] The oxide semiconductor layer 324 is provided between the oxide semiconductor layer 314 and the oxide semiconductor layer 301. .

[0420] The oxide semiconductor layer 321 to the oxide semiconductor layer 332 are covered with the inorganic insulating layer 500. , and is not in contact with the resin layer 600 .

[0421] Between the insulating layer 300 and the inorganic insulating layer 500, in the insulating layer 300, or in the inorganic insulating layer 500 The moving H2O can be absorbed by the oxide semiconductor layers 321 to 332. The amount of H2O reaching the oxide semiconductor layer that functions as the active layer of the transistor is It can be reduced.

[0422] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0423] (Embodiment 8) FIG. 21 is a diagram in which holes are provided in the oxide semiconductor layers 311 to 319 in FIG. This is an example of a surface.

[0424] FIG. 22 is an example of a cross-sectional view taken along line GH of FIG.

[0425] For example, in FIG. 22, the conductive layer 401 is a It has an area that overlaps with the hole.

[0426] For example, in FIG. 22, the conductive layer 401 is formed by It has an area that overlaps with the hole.

[0427] When current flows through a given location, the higher the resistance of the location through which the current flows, the easier it is to heat up.

[0428] When the contact resistance between the oxide semiconductor layer and the conductive layer is high, the contact portion between the oxide semiconductor layer and the conductive layer The temperature becomes higher.

[0429] Therefore, the larger the area of ​​the contact between the oxide semiconductor layer and the conductive layer, the The temperature of the conductor layer increases.

[0430] When the temperatures of the conductive layer and the oxide semiconductor layer increase, the temperature of the resin layer also increases.

[0431] When the resin layer becomes hot, gas (such as H2O gas) may be released from the resin layer. do.

[0432] If gas is released from the resin layer, it will affect the characteristics of the elements placed above the resin layer. This may result in the data being lost.

[0433] Therefore, by providing holes in the oxide semiconductor layer, the contact between the oxide semiconductor layer and the conductive layer can be improved. The area of ​​the portion can be reduced.

[0434] By reducing the area of ​​contact between the oxide semiconductor layer and the conductive layer, The temperature rise of the semiconductor layer can be suppressed, so that the release of gas from the resin layer can be suppressed. can be done.

[0435] In addition, when the temperature of the conductive layer increases, the temperature of the active layer in contact with the conductive layer also increases, This may affect the operation of the register.

[0436] Therefore, by reducing the area of ​​the contact portion between the oxide semiconductor layer and the conductive layer, This can suppress the temperature rise of the star.

[0437] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0438] (Embodiment 9) FIG. 23 is an example of a drawing in which the shape of the holes in the inorganic insulating layer 500 in FIG. 9 is modified.

[0439] FIG. 24 is an example of a cross-sectional view taken along line CD of FIG.

[0440] The conductive layer and the resin layer have poor adhesion, so when the resin layer is brought into contact with the conductive layer, the resin layer peels off. There are cases where they may leave.

[0441] In FIG. 9, the conductive layer and the resin layer are in contact with each other.

[0442] Therefore, in FIG. 23, the shape of the hole in the inorganic insulating layer 500 is set so that the conductive layer and the resin layer do not come into contact with each other. It has a shape like this.

[0443] 23 and 24, the inorganic insulating layer 500 has a hole 564a and a hole 564b.

[0444] Since the holes 564a and 564b do not overlap the conductive layer 401, It is possible to avoid contact with the resin layer 600 .

[0445] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0446] (Embodiment 10) In FIG. 9, the area of ​​the hole 564 is larger than the area of ​​the contact hole 551 .

[0447] In FIG. 23, the area of ​​the holes 564a and 564b is larger than the area of ​​the contact hole 551. Hear.

[0448] By the way, when a conductive layer is formed on a semiconductor layer, the oxide semiconductor layer that does not overlap with the conductive layer is The surface of the layer is etched.

[0449] Therefore, the oxide semiconductor layer that does not overlap with the conductive layer has a larger thickness than the oxide semiconductor layer that overlaps with the conductive layer. Become thinner.

[0450] On the other hand, when forming holes in the inorganic insulating layer 500, the surface of the oxide semiconductor layer is also etched. There may be cases where this occurs.

[0451] Generally, the larger the area of ​​the hole provided in the insulating layer, the faster the etching rate of the insulating layer. There is a tendency.

[0452] Therefore, if the area of ​​the hole is large, the oxide semiconductor layer may disappear inside the hole. There is.

[0453] Therefore, an example of a case where the area of ​​the hole is made smaller than the area of ​​the contact hole is shown in FIG. Shown in Figure 26.

[0454] FIG. 26 is an example of a cross-sectional view taken along line CD of FIG.

[0455] In the inorganic insulating layer 500 shown in FIG. 25 and FIG. 26, the holes 564c, 564d, 564e, and 564f are formed. 4f, hole 564g, hole 564h, hole 564i, hole 564j, hole 564k, hole 564l. do.

[0456] The area of ​​the holes 564c to 564l is smaller than the area of ​​the contact hole 551. Therefore, the probability that the oxide semiconductor layer inside the holes 564c to 564l disappears is reduced. It can be reduced.

[0457] Although one hole may be provided, it is preferable to provide a plurality of holes.

[0458] By forming multiple holes, the amount of H2O that moves from the resin layer to the oxide semiconductor layer is increased. It is possible.

[0459] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0460] (Embodiment 11) FIG. 27 is an example of a drawing in which the shape of the hole formed in the inorganic insulating layer 500 in FIG. 9 is modified.

[0461] FIG. 28 is an example of a cross-sectional view taken along line CD of FIG.

[0462] 27 and 28, the inorganic insulating layer 500 has holes 564m and 564n.

[0463] The holes 564m and 564n have regions overlapping with the side surfaces of the oxide semiconductor layer 314. H2O penetrates from the side surface of the compound semiconductor layer 314.

[0464] The side surface of the oxide semiconductor layer preferably has a tapered shape.

[0465] Even if the areas of the holes 564m and 564n are made larger than the area of ​​the contact hole 551, Good, and you can make it smaller.

[0466] The areas of the holes 564m and 564n are made larger than the area of ​​the contact hole 551. For example, H2O can be introduced from the upper surface and side surfaces of the oxide semiconductor layer 314. can.

[0467] The areas of the holes 564m and 564n are made smaller than the area of ​​the contact hole 551. This can prevent, for example, part of the oxide semiconductor layer 314 from being lost.

[0468] By allowing H2O to penetrate from the top and side surfaces of the oxide semiconductor layer 314, the resin layer 6 The amount of H 2 O that moves from 00 to the oxide semiconductor layer 314 can be increased.

[0469] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0470] (Embodiment 12) In FIG. 11A, the contact hole of the resin layer 600 is in contact with the contact of the inorganic insulating layer 500. Bigger than the hall.

[0471] On the other hand, as shown in FIG. 29, the contact holes of the resin layer 600 are filled with the contact holes of the inorganic insulating layer 500. It may be smaller than the hole.

[0472] As shown in FIG. 29, the end of the resin layer 600 has a region in contact with the conductive layer 411. This allows the distance between one electrode of the element and the transistor to be increased.

[0473] By increasing the distance between one electrode of the element and the transistor, The effect of the electric field generated at the side on the operation of the transistor can be reduced.

[0474] However, if the structure shown in FIG. 29 is used, the area of ​​the contact hole becomes small.

[0475] Therefore, by using the structure shown in FIG. 30, the area of ​​the contact hole is reduced compared to FIG. can be made comparatively large.

[0476] In FIG. 30, there is a region where the resin layer 600 and the conductive layer 411 are in contact with each other.

[0477] In FIG. 30, the upper surface of the inorganic insulating layer 500 inside the contact hole of the resin layer 600 Part of it is exposed.

[0478] 30, the upper surface of the inorganic insulating layer 500 is inserted into the contact hole of the resin layer 600. There is an area for exposing the

[0479] 30, the transistor and the region where the upper surface of the inorganic insulating layer 500 is exposed are An area where the resin layer 600 and the conductive layer 411 contact each other is located between them.

[0480] In FIG. 30 as well, the distance between one electrode of the element and the transistor can be increased.

[0481] When the structures shown in FIGS. 29 and 30 are used, a semiconductor layer other than an oxide semiconductor layer may be used.

[0482] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0483] (Embodiment 13) FIG. 31 shows an example in which an oxide semiconductor layer in contact with a resin layer is used as one electrode of a capacitor element. Shown in Figure 32.

[0484] FIG. 31 shows a structure in which the oxide semiconductor layers 311 to 319 and the like are not provided in FIG. 3, an oxide semiconductor layer 350, a conductive layer 450, and the like are provided.

[0485] It should be noted that FIG. 12 and FIG. 31 may be combined.

[0486] That is, the oxide semiconductor layers 311 to 319, the oxide semiconductor layer 350, Layer 450 etc. may all be provided.

[0487] FIG. 32 is an example of a cross-sectional view of the IJ cross section of FIG.

[0488] In FIG. 31 and FIG. 32, the resin layer 600 is formed on the inside of a hole provided in the inorganic insulating layer 500. The oxide semiconductor layer 350 has a portion in contact with the oxide semiconductor layer 350 .

[0489] The conductive layer 706 is electrically connected to the conductive layer 450 .

[0490] The conductive layer 450 is electrically connected to the oxide semiconductor layer 350 .

[0491] 31 and 32, an insulating layer 300 is provided on the conductive layer 202. In FIG.

[0492] 31 and 32, an oxide semiconductor layer 350 is provided on an insulating layer 300. In FIG.

[0493] 31 and 32, a conductive layer 706 is provided over the oxide semiconductor layer 350. In FIG.

[0494] FIG. 33 shows an example of a circuit diagram in which the configurations of FIGS. 31 and 32 are applied to a liquid crystal display device.

[0495] The wiring G1 is electrically connected to the gate of the transistor Tr.

[0496] The wiring S is electrically connected to one of the source and the drain of the transistor Tr.

[0497] One electrode of the liquid crystal element LC is electrically connected to the other of the source or drain of the transistor Tr. is connected to

[0498] One electrode of the capacitance element C2 is electrically connected to the other of the source or drain of the transistor Tr. is connected to

[0499] The other electrode of the capacitance element C2 is electrically connected to the wiring G2.

[0500] The wiring G2 is electrically connected to the gate of the transistor of the pixel adjacent to the pixel having the transistor Tr. In this case, the wiring G2 functions as a gate wiring. When it functions only as a capacitance wiring, the wiring G2 does not need to function as a gate wiring. stomach.

[0501] The relationship between FIG. 33 and FIG. 32 will be described.

[0502] At least a portion of the conductive layer 202 can function as, for example, the wiring G2.

[0503] At least a part of the conductive layer 202 functions as, for example, the other electrode of the capacitance element C2. It is possible.

[0504] At least a part of the oxide semiconductor layer 350 is used as, for example, one electrode of the capacitance element C2. It can function.

[0505] At least a part of the conductive layer 706 functions as, for example, one electrode of the liquid crystal element LC. It is possible.

[0506] The configurations in Figures 31 and 32 are driven by FFS (Fringe Field Switching). FIG. 34 shows an example of a circuit diagram when the present invention is applied to a moving liquid crystal display device.

[0507] FIG. 34 corresponds to a circuit diagram in which a capacitive element C1 and a wiring CL are added to FIG.

[0508] One electrode of the capacitance element C1 is electrically connected to the other of the source or drain of the transistor Tr. is connected to

[0509] The other electrode of the capacitance element C1 is electrically connected to the wiring CL.

[0510] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0511] (Embodiment 14) FIG. 35 shows a case where the end portion of the oxide semiconductor layer 350 in FIG. 31 is covered with a conductive layer 450. Here is one example.

[0512] FIG. 36 is an example of a cross-sectional view of the IJ cross section of FIG.

[0513] 35 and 36, the conductive layer 450 has a hole, and inside the hole of the conductive layer 450 The resin layer 600 has a portion in contact with the oxide semiconductor layer 350 .

[0514] 35 and 36, the conductive layer 450 is It can function as auxiliary wiring for 0.

[0515] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0516] (Embodiment 15) FIG. 37 shows a structure in which an oxide semiconductor layer 351, an oxide semiconductor layer 352, and the like are added to the structure shown in FIG. This is an example of the case.

[0517] In FIG. 37, an oxide semiconductor layer 351, an oxide semiconductor layer 352, etc. are used as gate wirings. The conductive layer 202 has an overlapping area with a conductive layer that can function as a conductive layer (eg, conductive layer 202).

[0518] An oxide semiconductor layer that can function as one electrode of a capacitor and a An oxide semiconductor layer that can function as an active layer and an oxide semiconductor layer that does not contact the resin layer are provided between the oxide semiconductor layer and the active layer. By having an oxide semiconductor layer, it is possible to function as an active layer of a transistor. This can reduce the amount of H2O that reaches the oxide semiconductor layer.

[0519] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0520] (Embodiment 16) An example of the display device will be described.

[0521] FIG. 38 shows an example of a light emitting device (EL display device (a type of semiconductor device)).

[0522] FIG. 39 is an example of a cross-sectional view of the KL cross section of FIG.

[0523] FIG. 40 is an example of a cross-sectional view of the MN cross section of FIG.

[0524] FIG. 41 is an example of a cross-sectional view of the OP cross section of FIG.

[0525] FIG. 42 is an example of a cross-sectional view of the QR cross section of FIG.

[0526] A conductive layer 1201 is provided on a substrate 1100 .

[0527] A conductive layer 1202 is disposed on a substrate 1100 .

[0528] An insulating layer 1300 is provided on the conductive layer 1201 and the conductive layer 1202 .

[0529] An oxide semiconductor layer 1301 is provided over an insulating layer 1300 .

[0530] An oxide semiconductor layer 1302 is provided over an insulating layer 1300 .

[0531] An oxide semiconductor layer 1303 is provided over an insulating layer 1300 .

[0532] A conductive layer 1401 is provided over the oxide semiconductor layer 1301 .

[0533] A conductive layer 1402 is provided over the oxide semiconductor layer 1301 .

[0534] A conductive layer 1403 is provided over the oxide semiconductor layer 1302 .

[0535] A conductive layer 1404 is provided over the oxide semiconductor layer 1303 .

[0536] A conductive layer 1405 is provided over the oxide semiconductor layer 1303 .

[0537] On the conductive layer 1401, on the conductive layer 1402, on the conductive layer 1403, on the conductive layer 1404, An inorganic insulating layer 1500 is provided on 1405 .

[0538] A conductive layer 1701 is provided on the inorganic insulating layer 1500 .

[0539] A conductive layer 1702 is provided on the inorganic insulating layer 1500 .

[0540] A resin layer 1600 is provided on a conductive layer 1701 and a conductive layer 1702 .

[0541] A layer 1800 containing an organic compound is provided over the conductive layer 1702 and the resin layer 1600 .

[0542] A conductive layer 1900 is provided over a layer 1800 containing an organic compound.

[0543] The conductive layer 1701 is connected to the conductive layer 1702 via a contact hole in the inorganic insulating layer 1500. 402 is electrically connected to the

[0544] The conductive layer 1701 is formed by contact holes in the inorganic insulating layer 1500 and the insulating layer 1300. The conductive layer 1202 is electrically connected to the conductive layer 1202 through a contact hole provided therein.

[0545] The conductive layer 1702 is connected to the conductive layer 1701 through a contact hole in the inorganic insulating layer 1500. 404 is electrically connected to the

[0546] The resin layer 1600 is formed on the inside of the hole of the inorganic insulating layer 1500 so as to cover the oxide semiconductor layer 1 302.

[0547] The oxide semiconductor layer 1301 and the oxide semiconductor layer 1303 are covered with an inorganic insulating layer 1500. Therefore, the resin layer 1600 is in contact with the oxide semiconductor layer 1301 and the oxide semiconductor layer 1303. I didn't touch it.

[0548] FIG. 43 is an example of a circuit diagram of a light emitting device (EL display device (a type of semiconductor device)).

[0549] The wiring S is electrically connected to one of the source and the drain of the transistor Tr1. .

[0550] The wiring G is electrically connected to the gate of the transistor Tr1.

[0551] The wiring V1 is electrically connected to one of the source and drain of the transistor Tr2. do.

[0552] The wiring V2 is electrically connected to one electrode of the capacitance element C.

[0553] The other of the source or drain of the transistor Tr1 is connected to the gate of the transistor Tr2. are electrically connected.

[0554] The other of the source and drain of the transistor Tr1 is electrically connected to the other electrode of the capacitance element C. is connected to

[0555] The other of the source and drain of the transistor Tr2 is electrically connected to one electrode of the light-emitting element EL. are connected to the network.

[0556] The relationship between FIG. 38 to FIG. 42 and FIG. 43 will be described.

[0557] At least a part of the conductive layer 1201 is used as, for example, the gate electrode of the transistor Tr1. It can function.

[0558] At least a part of the conductive layer 1201 can function as a wiring G, for example.

[0559] At least a part of the conductive layer 1202 is used as, for example, the gate electrode of the transistor Tr2. It can function.

[0560] At least a part of the conductive layer 1202 functions as, for example, the other electrode of the capacitor C. It is possible.

[0561] At least a part of the insulating layer 1300 is used as, for example, a gate insulating film of the transistor Tr1. It can function as such.

[0562] At least a part of the insulating layer 1300 is used as, for example, a gate insulating film of the transistor Tr2. It can function as such.

[0563] At least a part of the insulating layer 1300 is used as, for example, an insulating film (dielectric film) of the capacitance element C. It can function.

[0564] At least a part of the oxide semiconductor layer 1301 is, for example, an active layer of the transistor Tr1. It can function as such.

[0565] At least a part of the oxide semiconductor layer 1302 is used as, for example, one electrode of a capacitor C. It can function.

[0566] At least a part of the oxide semiconductor layer 1303 is, for example, an active layer of the transistor Tr2. It can function as such.

[0567] At least a portion of the conductive layer 1401 is, for example, a source electrode or a drain electrode of the transistor Tr1. It can function as one of the rain electrodes.

[0568] At least a part of the conductive layer 1401 can function as a wiring S, for example.

[0569] At least a portion of the conductive layer 1402 is, for example, a source electrode or a drain electrode of the transistor Tr1. The other of the drain electrodes can function as the drain electrode.

[0570] At least a portion of the conductive layer 1403 can function as, for example, the wiring V2.

[0571] At least a portion of the conductive layer 1404 is, for example, a source electrode or a drain electrode of the transistor Tr2. The other of the drain electrodes can function as the drain electrode.

[0572] At least a portion of the conductive layer 1405 is, for example, a source electrode or a drain electrode of the transistor Tr2. It can function as one of the rain electrodes.

[0573] At least a portion of the conductive layer 1405 can function as, for example, wiring V1.

[0574] At least a portion of the conductive layer 1701 is, for example, a source electrode or a drain electrode of the transistor Tr1. a wiring for electrically connecting the other of the drain electrodes to the gate electrode of the transistor Tr2; It can function as such.

[0575] At least a portion of the conductive layer 1701 is, for example, a source electrode or a drain electrode of the transistor Tr1. Functions as a wiring for electrically connecting the other of the drain electrodes to the other electrode of the capacitance element C. It is possible.

[0576] At least a part of the conductive layer 1702 functions as, for example, one electrode of the light-emitting element EL. It is possible.

[0577] At least a part of the layer 1800 containing an organic compound serves as, for example, a functional layer of the light-emitting element EL. It can function as such.

[0578] At least a part of the conductive layer 1900 functions as, for example, the other electrode of the light-emitting element EL. It is possible.

[0579] The resin layer 1600 is formed by depositing an oxide semiconductor on the inside of the holes of the inorganic insulating layer 1500. By having a portion in contact with the conductor layer 1302, the oxide semiconductor layer 1302 can be contained.

[0580] Although an example of a light-emitting device is shown in this embodiment mode, a functional layer other than the layer containing an organic compound may be used. By applying the above, a semiconductor device other than a light emitting device can be manufactured.

[0581] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0582] (Embodiment 17) FIG. 44 shows a structure in which the conductive layer 1404 is replaced with a conductive layer 1406 and an oxide semiconductor layer 130 in FIG. 4, and the conductive layer 1407.

[0583] FIG. 45 is an example of a cross-sectional view of the ST section of FIG.

[0584] FIG. 46 is an example of a circuit diagram in which a resistive element R is added to the circuit of FIG.

[0585] One terminal of the resistor element R is electrically connected to the other of the source or drain of the transistor Tr2. is connected to

[0586] The other terminal of the resistor element R is electrically connected to one electrode of the light-emitting element EL.

[0587] The relationship between the resistive element R in FIG. 44 to FIG. 45 and FIG. 46 will be described.

[0588] At least a part of the oxide semiconductor layer 1304 functions as, for example, a resistor of the resistor element R. It is possible.

[0589] At least a part of the conductive layer 1406 can function as one terminal of the resistor element R. Cut.

[0590] At least a part of the conductive layer 1407 can function as the other terminal of the resistor element R. Cut.

[0591] Here, an oxide semiconductor layer 1304 is provided over an insulating layer 1300 .

[0592] In addition, a conductive layer 1406 is provided over the oxide semiconductor layer 1304 .

[0593] In addition, a conductive layer 1407 is provided over the oxide semiconductor layer 1304 .

[0594] In addition, an inorganic insulating layer 1500 is provided over the conductive layer 1406 and the conductive layer 1407 .

[0595] The resin layer 1600 is formed by depositing an oxide semiconductor on the inside of the holes of the inorganic insulating layer 1500. Since the resistor element R has a portion in contact with the conductor layer 1304, H2O is contained in the resistor element R. It is possible.

[0596] The resistance value of the resistor element R is sufficiently higher than the resistance value when the transistor Tr2 is in the on state. It is preferable that

[0597] The resistance value of the resistor element R is sufficiently higher than the resistance value when the transistor Tr2 is in the on state. By this, the amount of current flowing through the light emitting element can be determined depending on the resistance value of the resistor element R. You will be able to do it.

[0598] However, if the resistivity of the resistor element R is too high, the luminance of the light-emitting element may be reduced too much. do.

[0599] The resistivity of the oxide semiconductor layer is much higher than that of a semiconductor layer containing silicon. Very expensive.

[0600] Therefore, the resistivity of the resistor element R can be reduced by adding H2O to the resistor element R. can be done.

[0601] Although an example of a light-emitting device has been shown in this embodiment mode, a functional layer other than the layer containing an organic compound may be applied. In this way, a semiconductor device other than a light emitting device can be manufactured.

[0602] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0603] (Embodiment 18) FIG. 47 is an example of a diagram in which the conductive layer 1404 in FIG. 38 is replaced with a transistor. .

[0604] FIG. 48 is an example of a cross-sectional view of the UV cross section of FIG.

[0605] FIG. 49 is an example of a circuit diagram in which a transistor Tr3 and a wiring G2 are added to FIG. 43. .

[0606] The source or drain of the transistor Tr3 is connected to the source or drain of the transistor Tr2. It is electrically connected to the other of the drains.

[0607] The other of the source and drain of the transistor Tr3 is electrically connected to one electrode of the light-emitting element EL. are connected to the network.

[0608] The gate of the transistor Tr3 is electrically connected to the line G2.

[0609] The relationship between the transistor Tr3 in FIG. 47 to FIG. 48 and FIG. 49 will be described.

[0610] At least a part of the conductive layer 1203 is used as, for example, the gate electrode of the transistor Tr3. It can function.

[0611] At least a part of the conductive layer 1203 can function as, for example, the wiring G2.

[0612] At least a part of the insulating layer 1300 is used as, for example, a gate insulating film of the transistor Tr3. It can function as such.

[0613] At least a part of the oxide semiconductor layer 1305 is, for example, an active layer of the transistor Tr3. It can function as such.

[0614] At least a portion of the conductive layer 1408 is connected to the source electrode or the drain electrode of the transistor Tr3. It can function as one of the poles.

[0615] At least a part of the conductive layer 1409 is a source electrode or a drain electrode of the transistor Tr3. It can function as the other pole.

[0616] Here, a conductive layer 1203 is present on a substrate 1100 .

[0617] In addition, an insulating layer 1300 is provided over the conductive layer 1203 .

[0618] In addition, an oxide semiconductor layer 1305 is provided over the insulating layer 1300 .

[0619] In addition, a conductive layer 1408 is provided over the oxide semiconductor layer 1305 .

[0620] In addition, a conductive layer 1409 is provided over the oxide semiconductor layer 1305 .

[0621] In addition, an inorganic insulating layer 1500 is provided over the conductive layer 1408 and the conductive layer 1409 .

[0622] The resin layer 1600 is formed by depositing an oxide semiconductor on the inside of the holes of the inorganic insulating layer 1500. Since the active layer of the transistor Tr3 has a portion in contact with the conductor layer 1305, it contains H2O. It can be done.

[0623] By including H2O in the active layer of the transistor Tr3, the transistor Tr3 can be normally on.

[0624] The active layer of the transistor Tr1 and the active layer of the transistor Tr2 are in contact with the resin layer 1600. Therefore, the transistors Tr1 and Tr2 can be normally off. can.

[0625] The technical significance of the transistor Tr3 will now be described.

[0626] The transistor Tr3 has a function of being able to operate in the saturation region.

[0627] The transistor Tr2 has the function of being able to operate in the linear region.

[0628] If transistor Tr2 operates in the linear region and transistor Tr3 operates in the saturation region, The value of the current flowing through the light-emitting element EL is determined by the relationship between the transistor Tr3 and the light-emitting element EL. It can be determined.

[0629] Then, by making the transistor Tr3 normally on, the transistor Tr When operating transistor Tr3 in the saturation region, the voltage applied to the gate of transistor Tr3 is reduced. It is possible.

[0630] When the transistor Tr3 is operated in the saturation region, the gate Since the purpose is to lower the voltage applied to the It is sufficient that the voltage is lower than the threshold voltage of transistor Tr2.

[0631] Therefore, the transistor Tr3 may be normally off.

[0632] Although an example of a light-emitting device has been shown in this embodiment mode, a functional layer other than the layer containing an organic compound may be applied. In this way, a semiconductor device other than a light emitting device can be manufactured.

[0633] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0634] (Embodiment 19) FIG. 50 shows an oxide semiconductor layer 1351, an oxide semiconductor layer 1352, etc., added to FIG. 38. 1 is an example of a drawing.

[0635] An oxide semiconductor layer that can function as one electrode of a capacitor and a An oxide semiconductor layer that can function as an active layer and an oxide semiconductor layer that does not contact the resin layer are provided between the oxide semiconductor layer and the active layer. By having an oxide semiconductor layer, it is possible to function as an active layer of a transistor. This can reduce the amount of H2O that reaches the oxide semiconductor layer.

[0636] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0637] (Embodiment 20) Any circuit can be applied to the pixel circuit of the light emitting device.

[0638] FIG. 51 shows an example of a pixel circuit of a light emitting device.

[0639] The pixel circuit of the light emitting device shown in FIG. Line S, wiring G1 to wiring G3, wiring RE, wiring V, capacitance element C1, capacitance element C2, light-emitting element Has EL.

[0640] The wiring S is electrically connected to one of the source and the drain of the transistor Tr1. .

[0641] The wiring G1 is electrically connected to the gate of the transistor Tr2.

[0642] The wiring G1 is electrically connected to the gate of the transistor Tr5.

[0643] The wiring G2 is electrically connected to the gate of the transistor Tr1.

[0644] The wiring G2 is electrically connected to the gate of the transistor Tr4.

[0645] The wiring G2 is electrically connected to one electrode of the capacitor C2.

[0646] The wiring G3 is electrically connected to the gate of the transistor Tr6.

[0647] The wiring RE is electrically connected to one of the source and drain of the transistor Tr6. do.

[0648] The wiring V is electrically connected to one of the source and drain of the transistor Tr2. .

[0649] The wiring V is electrically connected to one electrode of the capacitance element C1.

[0650] The light-emitting element EL is electrically connected to one of the source and drain of the transistor Tr5. is.

[0651] The other electrode of the capacitance element C1 is electrically connected to the other of the source or drain of the transistor Tr6. are connected to the network.

[0652] The other electrode of the capacitance element C1 is electrically connected to the gate of the transistor Tr3. .

[0653] The other electrode of the capacitance element C1 is electrically connected to either the source or the drain of the transistor Tr4. are connected to the network.

[0654] The other electrode of the capacitive element C1 is electrically connected to the other electrode of the capacitive element C2.

[0655] The other of the source or drain of the transistor Tr1 is connected to the source or drain of the transistor Tr2. It is electrically connected to the other of the drains.

[0656] The other of the source or drain of the transistor Tr1 is connected to the source or drain of the transistor Tr3. It is electrically connected to one of the drains.

[0657] The other of the source or drain of the transistor Tr3 is connected to the source or drain of the transistor Tr4. It is electrically connected to the other of the drains.

[0658] The other of the source or drain of the transistor Tr3 is connected to the source or drain of the transistor Tr5. It is electrically connected to the other of the drains.

[0659] The operation of the circuit in FIG. 51 will now be described.

[0660] In the first period (reset period), the wiring G3 is selected to turn on the transistor Tr6. The pixel circuit is reset to the on state.

[0661] In the first period, the wiring G1 and the wiring G2 are not selected.

[0662] In the second period (write period), the line G2 is selected, and the transistors Tr1 and Tr2 are turned on. The transistor Tr4 is turned on, and the video signal is written from the line S.

[0663] In the second period, the wiring G1 and the wiring G3 are not selected.

[0664] In the third period (display period), the line G1 is selected, and the transistors Tr2 and A current is supplied to the light-emitting element EL from the wiring V via the transistor Tr3 and the transistor Tr5. .

[0665] In the second period, the wiring G2 and the wiring G3 are not selected.

[0666] In short, the operation of sequentially selecting the wiring G3, the wiring G2, and the wiring G1 is repeated.

[0667] For example, one electrode or the other electrode of the capacitance element C1 in FIG. 51 is connected to an oxide film in contact with the resin layer. It may be a semiconductor layer.

[0668] For example, one electrode or the other electrode of the capacitance element C2 in FIG. 51 is connected to an oxide film in contact with the resin layer. It may be a semiconductor layer.

[0669] For example, if the active layer of the transistor Tr5 in FIG. 51 is an oxide semiconductor layer in contact with a resin layer, It is possible.

[0670] When the active layer of the transistor Tr5 in FIG. 51 comes into contact with the resin layer, active layer, active layer of transistor Tr2, active layer of transistor Tr3, active layer of transistor Tr It is preferable that the active layer of transistor Tr4 and the active layer of transistor Tr6 are not in contact with the resin layer.

[0671] Although an example of a light-emitting device has been shown in this embodiment mode, a functional layer other than the layer containing an organic compound may be applied. In this way, a semiconductor device other than a light emitting device can be manufactured.

[0672] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0673] (Embodiment 21) Any circuit can be applied to the pixel circuit of the light emitting device.

[0674] FIG. 52 shows an example of a pixel circuit of a light emitting device.

[0675] The pixel circuit of the light emitting device shown in FIG. It includes a line S, wires G1 to G3, wire V1, wire V2, a capacitive element C, and a light-emitting element EL.

[0676] The wiring S is electrically connected to one of the source and the drain of the transistor Tr1. .

[0677] The wiring G1 is electrically connected to the gate of the transistor Tr1.

[0678] The wiring G1 is electrically connected to the gate of the transistor Tr2.

[0679] The wiring G2 is electrically connected to the gate of the transistor Tr4.

[0680] The wiring G2 is electrically connected to the gate of the transistor Tr5.

[0681] The wiring G3 is electrically connected to the gate of the transistor Tr6.

[0682] The wiring V1 is electrically connected to one of the source and drain of the transistor Tr3. do.

[0683] The wiring V2 is electrically connected to one of the source and drain of the transistor Tr5. do.

[0684] The wiring V2 is electrically connected to one of the source and drain of the transistor Tr6. do.

[0685] The light-emitting element EL is electrically connected to one of the source and drain of the transistor Tr4. is.

[0686] The light-emitting element EL is electrically connected to the other of the source and drain of the transistor Tr6. is.

[0687] The other of the source or drain of the transistor Tr1 is connected to the source or drain of the transistor Tr5. It is electrically connected to the other of the drains.

[0688] The other of the source and drain of the transistor Tr1 is electrically connected to one electrode of the capacitance element C. is connected to

[0689] Either the source or the drain of the transistor Tr2 is connected to the gate of the transistor Tr3. are electrically connected.

[0690] One of the source and drain of the transistor Tr2 is electrically connected to the other electrode of the capacitance element C. is connected to

[0691] The other of the source or drain of the transistor Tr2 is connected to the source or drain of the transistor Tr3. It is electrically connected to the other of the drains.

[0692] The other of the source or drain of the transistor Tr2 is connected to the source or drain of the transistor Tr4. It is electrically connected to the other of the drains.

[0693] The operation of the circuit in FIG. 52 will now be described.

[0694] In the first period, the wiring G1 and the wiring G3 are selected, and the transistors Tr1 and Transistor Tr2 and transistor Tr6 are set to the conductive state.

[0695] In addition, the wiring G2 is not selected in the first period.

[0696] In the second period, the line G2 is selected, and the transistors Tr4 and Tr5 is displayed as being in a conductive state.

[0697] In the second period, the wiring G1 and the wiring G3 are not selected.

[0698] It is preferable that the wiring G1 is electrically connected to the wiring G3.

[0699] The input terminal of the inverter is electrically connected to the wiring G1 or G3, and the output terminal of the inverter is It is preferable to electrically connect the terminal to the wiring G2.

[0700] Electrically connect the input terminal of the inverter to wire G2, and the output terminal of the inverter to wire G1. Alternatively, it may be electrically connected to the wiring G3.

[0701] The type of inverter is not limited.

[0702] The configuration of FIG. 53 may be used as the inverter.

[0703] For example, one electrode or the other electrode of the capacitance element C1 in FIG. 52 is connected to an oxide film in contact with the resin layer. It may be a semiconductor layer.

[0704] For example, if the active layer of the transistor Tr4 in FIG. 52 is an oxide semiconductor layer in contact with a resin layer, It is possible.

[0705] When the active layer of the transistor Tr4 in FIG. 52 comes into contact with the resin layer, active layer, active layer of transistor Tr2, active layer of transistor Tr3, active layer of transistor Tr It is preferable that the active layer of transistor Tr5 and the active layer of transistor Tr6 are not in contact with the resin layer.

[0706] Although an example of a light-emitting device has been shown in this embodiment mode, a functional layer other than the layer containing an organic compound may be applied. In this way, a semiconductor device other than a light emitting device can be manufactured.

[0707] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0708] (Embodiment 22) The disclosed invention can also be applied to circuits other than pixel circuits.

[0709] Figure 53 is an example of an inverter.

[0710] The circuit of FIG. 53 includes a transistor Tr1, a transistor Tr2, a wiring IN, a wiring OUT, It has wiring Vdd and wiring Vss.

[0711] The wiring IN has a function of functioning as an input terminal.

[0712] The wiring OUT has a function of being able to function as an output terminal.

[0713] The wiring Vdd has a function of supplying a first voltage.

[0714] The wiring Vss has a function of supplying a second voltage.

[0715] The transistor Tr1 is preferably an N-type transistor.

[0716] Transistor Tr2 is preferably an N-type transistor.

[0717] Preferably, the first voltage is greater than the second voltage.

[0718] The first voltage is preferably Vdd (a voltage higher than the reference voltage).

[0719] The second voltage is preferably Vss (a voltage lower than the reference voltage).

[0720] One of the source and drain of the transistor Tr1 is electrically connected to the wiring Vdd. There are.

[0721] The other of the source and drain of the transistor Tr1 is electrically connected to the wiring OUT. There are.

[0722] The gate of the transistor Tr1 is electrically connected to the other of the source and drain of the transistor Tr1. are electrically connected.

[0723] One of the source and drain of the transistor Tr2 is electrically connected to the wiring OUT. There are.

[0724] The other of the source and the drain of the transistor Tr2 is electrically connected to the wiring Vss. There are.

[0725] The gate of the transistor Tr2 is electrically connected to the wiring IN.

[0726] The operation of FIG. 53 will be described.

[0727] A third voltage capable of turning on the transistor Tr2 is input to the wiring IN. Then, a second voltage (for example, Vss) is output from the line OUT.

[0728] A fourth voltage capable of turning off the transistor Tr2 is input to the wiring IN. Then, a first voltage (for example, Vdd) is output from the line OUT.

[0729] In FIG. 53, the threshold voltage of the transistor Tr1 is It is preferably smaller than the voltage.

[0730] In FIG. 53, a transistor Tr1 is normally on, and a transistor Tr2 is It is more preferable that the light emitting diode is normally off.

[0731] It is preferable that the active layer of the transistor Tr1 is in contact with the resin layer.

[0732] It is preferable that the active layer of the transistor Tr2 is not in contact with the resin layer.

[0733] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0734] (Embodiment 23) As the transistor, a bottom gate type transistor or a top gate type transistor may be used. A transistor of a type other than 0.1V may be used.

[0735] In the case of a bottom gate type transistor, the source electrode and the drain electrode are formed on the active layer. Alternatively, the source and drain electrodes may be disposed below the active layer. That's fine.

[0736] A transistor consists of at least a conductive layer (gate electrode), an insulating layer (gate insulating film), and a semiconductor. The source electrode and the drain electrode are the components of the transistor. It's okay to handle it.

[0737] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0738] (Embodiment 24) The materials for each layer will now be described.

[0739] The substrates are glass substrates, quartz substrates, metal substrates, semiconductor substrates, resin substrates (plastic substrates ) etc. can be used, but are not limited to these.

[0740] The substrate may be flexible.

[0741] When a glass substrate is made thin, it becomes flexible.

[0742] The resin substrate is flexible.

[0743] A base insulating film may be formed on the substrate.

[0744] The insulating layer may be made of any material as long as it has insulating properties.

[0745] The insulating layer may have a single layer structure or a multilayer structure.

[0746] Examples of the insulating layer include, but are not limited to, an inorganic insulating layer and a resin layer.

[0747] The inorganic insulating layer may be, for example, a film having silicon oxide, a film having silicon nitride, or an aluminum nitride. Examples of the films include a film containing hafnium, a film containing aluminum oxide, and a film containing hafnium oxide. is not limited to.

[0748] The inorganic insulating layer may have a single layer structure or a multilayer structure.

[0749] The resin layer is not limited as long as it is a film containing a resin.

[0750] Examples of resins include, but are not limited to, polyimide, acrylic, siloxane, and epoxy. I can't.

[0751] The resin layer may also have a function as an adhesive.

[0752] An example of a resin layer having an adhesive function is a sealing material.

[0753] When a method of forming a resin layer using a liquid material is used, the resin layer contains a lot of H2O. is preferable.

[0754] Methods for forming a resin layer using a liquid material include printing and spin coating. Not limited.

[0755] The resin layer may have a single layer structure or a multilayer structure.

[0756] The insulating layer capable of functioning as a gate insulating film is preferably an inorganic insulating layer.

[0757] The conductive layer may be made of any material that is conductive.

[0758] The conductive layer may be, but is not limited to, a film containing a metal, a film containing a transparent conductor, or the like.

[0759] Examples of metals include aluminum, titanium, molybdenum, tungsten, chromium, Examples of the metal include, but are not limited to, gold, silver, copper, alkali metals, and alkaline earth metals.

[0760] Examples of transparent conductors include indium tin oxide and indium zinc oxide. Not limited.

[0761] The conductive layer may have a single layer structure or a multilayer structure.

[0762] The oxide semiconductor layer is not limited as long as it is a film containing metal and oxygen.

[0763] For example, a film having indium and oxygen, a film having zinc and oxygen, a film having tin and oxygen, etc. can function as an oxide semiconductor layer.

[0764] For example, the oxide semiconductor layer may be an indium oxide film, a tin oxide film, a zinc oxide film, or the like. is not limited to.

[0765] For example, the oxide semiconductor layer may be an In-Zn oxide film, an Sn-Zn oxide film, or an Al -Zn-based oxide film, Zn-Mg-based oxide film, Sn-Mg-based oxide film, In-Mg-based oxide film Examples of the material include, but are not limited to, an In-Ga oxide film.

[0766] The AB-based oxide film (A and B are elements) means a film containing A, B, and oxygen.

[0767] For example, the oxide semiconductor layer may be an In-Ga-Zn oxide film or an In-Sn-Zn oxide film. oxide film, Sn-Ga-Zn oxide film, In-Al-Zn oxide film, In-Hf-Zn In-based oxide film, In-La-Zn based oxide film, In-Ce-Zn based oxide film, In-Pr- Zn-based oxide film, In-Nd-Zn-based oxide film, In-Sm-Zn-based oxide film, In-E U-Zn oxide film, In-Gd-Zn oxide film, In-Tb-Zn oxide film, In -Dy-Zn based oxide film, In-Ho-Zn based oxide film, In-Er-Zn based oxide film, In-Tm-Zn oxide film, In-Yb-Zn oxide film, In-Lu-Zn ​​oxide Examples include, but are not limited to, an Al-Ga-Zn oxide film, an Sn-Al-Zn oxide film, etc. .

[0768] An ABC oxide film (A, B, and C are elements) refers to a film containing A, B, C, and oxygen. Taste.

[0769] For example, the oxide semiconductor layer may be an In-Sn-Ga-Zn oxide film, an In-Hf-G a-Zn oxide film, In-Al-Ga-Zn oxide film, In-Sn-Al-Zn acid oxide film, In-Sn-Hf-Zn oxide film, In-Hf-Al-Zn oxide film, etc. but is not limited to.

[0770] An ABCD oxide film (where A, B, C, and D are elements) is a film made up of A, B, C, D, and oxygen. It means a membrane having

[0771] As the oxide semiconductor layer, a film containing indium, gallium, zinc, and oxygen is particularly preferable. It is nice.

[0772] The oxide semiconductor layer preferably has crystallinity.

[0773] The crystals are oriented so that the C-axis direction is perpendicular to the surface of the oxide semiconductor layer or the substrate. preferable.

[0774] The crystals with the C-axis oriented perpendicular to the surface of the oxide semiconductor layer or substrate are called CAAC (C -Axis Aligned Crystal).

[0775] The angle between the C-axis of the crystal and the surface of the oxide semiconductor layer or the substrate is preferably 90 degrees, but is preferably 80 degrees. The temperature may be from 100 degrees to 100 degrees.

[0776] As an example of a method for manufacturing CAAC, an oxide semiconductor layer is formed by a sputtering method. In the first method, the substrate temperature during film formation is set to 200° C. or higher and 450° C. or lower.

[0777] In the first method, the CAAC is formed under and over an oxide semiconductor layer.

[0778] As an example of a method for manufacturing CAAC, an oxide semiconductor layer is formed, and then, The second method involves heat treatment at 0°C or above for at least 3 minutes.

[0779] In the second method, the CAAC is formed at least on the upper layer of the oxide semiconductor layer (second method Pattern of Law A).

[0780] In the second method, the thickness of the oxide semiconductor layer is reduced, so that the lower and upper layers A CAAC can be formed (pattern B of the second method).

[0781] As an example of a method for preparing CAAC, the first oxide film formed by the pattern B of the second method is There is a third method for forming a second oxide semiconductor layer on the oxide semiconductor layer.

[0782] In the second and third methods, the method for forming the oxide semiconductor layer is not limited to a sputtering method. Not determined.

[0783] By the first to third methods, the angle between the C-axis and the surface of the oxide semiconductor layer or the substrate is 80 degrees. Crystals can be formed that are greater than or equal to 100 degrees.

[0784] In the first to third methods, an oxide semiconductor layer having a CAAC at least on the upper layer (surface) is formed. It can be formed.

[0785] The oxide semiconductor layer containing CAAC is dense and can block HO, H, etc. do.

[0786] Therefore, the surface of the oxide semiconductor layer in contact with the resin layer is preferably amorphous.

[0787] When the oxide semiconductor layer is formed using CAAC, the surface of the oxide semiconductor layer that comes into contact with the resin layer By carrying out the plasma treatment, at least the surface of the oxide semiconductor layer in contact with the resin layer is A portion can be made amorphous.

[0788] The oxide semiconductor layer that is not in contact with the resin layer is not allowed to contain H2O. It is preferable not to perform plasma treatment on the oxide semiconductor layer that is not in contact with the oxide semiconductor layer.

[0789] The plasma treatment includes hydrogen plasma treatment, rare gas plasma treatment, and halogen plasma treatment. The reasons include, but are not limited to,

[0790] Crystallization of the first oxide semiconductor layer (the oxide semiconductor layer not in contact with the resin layer, the layer containing hydrogen, etc.) and a second oxide semiconductor layer (an oxide semiconductor layer in contact with a resin layer, a layer containing hydrogen, or the like). It is preferable that the crystal state is different from that of the other crystals.

[0791] For example, the crystal state of the second oxide semiconductor layer is changed to a state in which H2O and H are more abundant than those of the first oxide semiconductor layer. By making the second oxide semiconductor layer in a crystalline state in which the second oxide semiconductor layer is easily infiltrated, the resistivity of the second oxide semiconductor layer is made higher than that of the first oxide semiconductor layer. The resistivity of the layer can be made lower than that of the semiconductor layer.

[0792] For example, the second oxide semiconductor layer may be an amorphous oxide semiconductor layer, a microcrystalline oxide semiconductor layer, or A non-single-crystal oxide semiconductor layer such as a polycrystalline oxide semiconductor layer is used as the first oxide semiconductor layer. When the second oxide semiconductor layer is an oxide semiconductor layer containing C, the crystal state of the second oxide semiconductor layer is It can be made into a crystalline state in which H2O and H can more easily penetrate than the conductor layer.

[0793] The fine crystals include, for example, nanocrystals and microcrystals.

[0794] For example, the crystallinity of the second oxide semiconductor layer is set to be higher than that of the first oxide semiconductor layer. By this, the resistivity of the second oxide semiconductor layer is made higher than the resistivity of the first oxide semiconductor layer. can also be lowered.

[0795] In particular, when the first oxide semiconductor layer is an oxide semiconductor layer having CAAC, The second oxide semiconductor layer can be a single crystal oxide semiconductor layer.

[0796] The crystal state of the third oxide semiconductor layer (the oxide semiconductor layer for absorbing H2O) It is preferable that the second oxide semiconductor layer has a crystal state in which H2O and H can easily enter the second oxide semiconductor layer. stomach.

[0797] The crystalline state of the first oxide semiconductor layer, the crystalline state of the second oxide semiconductor layer, and the crystalline state of the third oxide semiconductor layer are The crystal state of the amorphous semiconductor layer may be different from that of the amorphous semiconductor layer.

[0798] The difference in the crystal state can be confirmed by, for example, electron beam diffraction.

[0799] For example, different electron diffraction patterns indicate different crystal states.

[0800] For example, after the first oxide semiconductor layer and the second oxide semiconductor layer are simultaneously formed, by destroying the crystals of one of the first oxide semiconductor layer and the second oxide semiconductor layer, The crystal state of the first oxide semiconductor layer is made different from the crystal state of the second oxide semiconductor layer. It is possible.

[0801] Methods for destroying crystals include plasma treatment, ion doping, and ion implantation. but is not limited to.

[0802] Also, for example, a method for forming a first oxide semiconductor layer and a method for forming a second oxide semiconductor layer By using different methods, the crystal state of the first oxide semiconductor layer and the crystal state of the second oxide semiconductor layer can be The crystalline state of the layer can be different from that of the layer.

[0803] The oxide semiconductor layer may have a single layer structure or a stacked layer structure.

[0804] When the oxide semiconductor layer has a stacked structure, oxide semiconductor layers having different electron affinities are stacked. It is okay to do so.

[0805] The higher the electron affinity, the higher the insulating property and the lower the off-state current of the transistor.

[0806] The smaller the electron affinity, the higher the conductivity, and therefore the higher the on-state current of the transistor.

[0807] By stacking oxide semiconductor layers with different electron affinities, it is possible to form an oxide semiconductor layer with a large electron affinity. This allows the use of both the advantages of the organic semiconductor layer and the advantages of the oxide semiconductor layer, which has a low electron affinity. preferable.

[0808] Note that an oxide semiconductor layer having a high electron affinity is disposed on an oxide semiconductor layer having a low electron affinity. Alternatively, an oxide semiconductor layer having a high electron affinity may be placed over an oxide semiconductor layer having a low electron affinity. It may be placed under a layer.

[0809] A second oxide semiconductor layer having a second electron affinity is formed on a first oxide semiconductor layer having a first electron affinity. An oxide semiconductor layer is disposed, and a third electrode is disposed on the second oxide semiconductor layer having a second electron affinity. A third oxide semiconductor layer having electron affinity may be provided.

[0810] When the first electron affinity and the third electron affinity are greater than the second electron affinity, the oxide The occurrence of leakage current on the front and back surfaces of the semiconductor layer can be suppressed.

[0811] The third electron affinity can be less than the first electron affinity.

[0812] The third electron affinity can be greater than the first electron affinity.

[0813] The third electron affinity can be the same as the first electron affinity.

[0814] The layer containing an organic compound preferably has at least a light-emitting layer.

[0815] The layer containing an organic compound includes an electron injection layer, an electron transport layer, a hole injection layer, a hole transport layer, etc. It's fine if you're there.

[0816] The light-emitting element is not limited to an organic EL element.

[0817] The light emitting element may be an LED element, an inorganic EL element, or the like.

[0818] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0819] (Embodiment 25)

[0820] In the first embodiment, the oxide semiconductor layer 32 is used as one electrode of the element in FIG. It has been explained that the present invention is not limited to the above.

[0821] Furthermore, as shown in FIG. 59, a heat dissipating layer is provided on the inside of the hole of the resin layer 60 and on the resin layer 60. A layer 99 can be formed to cover the insulating layer 99 .

[0822] By providing the layer 99 having heat dissipation properties on the inside of the holes of the resin layer 60, The heat generated in the conductor layer 32 can be dissipated.

[0823] No hole is provided in the resin layer 60 that reaches the oxide semiconductor layer 32, and the oxide semiconductor layer 32 is provided under the resin layer 60. A layer 99 having heat dissipation properties may be provided on the layer.

[0824] However, when the layer 99 having the heat dissipation property is provided under the resin layer 60, the layer 99 having the heat dissipation property and the The distance to the transistor may become too close and the transistor may become overheated.

[0825] When a transistor is heated, its electrical characteristics can change.

[0826] Therefore, it is preferable to provide a layer 99 having heat dissipation properties on the resin layer 60 .

[0827] By providing a layer 99 having heat dissipation properties on the resin layer 60, the transistor and the heat dissipation properties are The layers 99 having the same thickness can be spaced apart.

[0828] The heat dissipating layer 99 may be in the form of islands as shown in FIG.

[0829] The heat dissipating layer 99 may be provided on the entire surface of the substrate.

[0830] The heat dissipating layer 99 may be any film made of a material having heat dissipation properties. good.

[0831] Materials with heat dissipation properties include silicon nitride, aluminum oxide, diamond-like carbon, Examples include, but are not limited to, aluminum nitride, silicon, metal, and the like.

[0832] Metals include gold, silver, copper, platinum, iron, aluminum, molybdenum, titanium, tungsten, etc. but is not limited to.

[0833] For example, the thermal conductivity of silicon nitride is approximately 20 W / m·K.

[0834] For example, the thermal conductivity of aluminum oxide is approximately 23 W / m K.

[0835] For example, the thermal conductivity of diamond-like carbon film is about 400 to about 1800 W / m K. It is.

[0836] For example, the thermal conductivity of aluminum nitride is about 170 to about 200 W / m·K.

[0837] For example, the thermal conductivity of silicon is approximately 168 W / m·K.

[0838] For example, the thermal conductivity of gold is approximately 320 W / m·K.

[0839] For example, the thermal conductivity of silver is approximately 420 W / m·K.

[0840] For example, the thermal conductivity of copper is approximately 398 W / m K.

[0841] For example, the thermal conductivity of platinum is approximately 70 W / m·K.

[0842] For example, the thermal conductivity of iron is approximately 84 W / m K.

[0843] For example, the thermal conductivity of aluminum is approximately 236 W / m K.

[0844] For example, the thermal conductivity of molybdenum is approximately 139 W / m K.

[0845] For example, the thermal conductivity of titanium is approximately 21.9 W / m K.

[0846] For example, the thermal conductivity of tungsten is approximately 177 W / m K.

[0847] Gold, silver, copper, and aluminum have particularly high thermal conductivity.

[0848] Incidentally, copper alloy films and aluminum alloy films also have high thermal conductivity.

[0849] For reference, the thermal conductivity of acrylic is 0.2 W / m K.

[0850] For reference, the thermal conductivity of epoxy is 0.21 W / m K.

[0851] For reference, the thermal conductivity of silicon dioxide is 8 W / m·K.

[0852] The heat dissipating layer 99 may be a single layer or a multilayer.

[0853] The higher the thermal conductivity, the better the heat dissipation, so it is recommended to use materials with a thermal conductivity of 150 W / m K or higher. Preferred.

[0854] In the case where the oxide semiconductor layer contains indium, a predetermined material (for example, copper, a copper alloy, When a film containing aluminum or an aluminum alloy is in contact with the oxide semiconductor layer, In some cases, a film containing a certain material reacts with the oxide semiconductor layer, causing corrosion.

[0855] Therefore, a film other than the film having the predetermined material is provided between the film having the predetermined material and the oxide semiconductor layer. It is preferable to sandwich a layer 99 having heat dissipation properties.

[0856] That is, a second layer having heat dissipation properties is provided on a first layer having heat dissipation properties.

[0857] The first heat dissipation layer is made of silicon nitride or aluminum oxide, which is unlikely to corrode when mixed with the oxide semiconductor layer. Aluminum, diamond-like carbon, aluminum nitride, silicon, platinum, iron, molybdenum Preferred are but not limited to limonene, titanium, tungsten, and the like.

[0858] The material of the first heat dissipation layer is selected from stable metals such as molybdenum, titanium, and tungsten. Stainless steel and the like are particularly preferred.

[0859] The second heat dissipating layer is a film made of a predetermined material.

[0860] The predetermined material is, for example, copper, a copper alloy, aluminum, an aluminum alloy, or the like.

[0861] It is preferable that H is contained in the layer having heat dissipation properties.

[0862] The oxide semiconductor layer is heated by contacting the H-containing layer having heat dissipation properties with the oxide semiconductor layer. H can be supplied.

[0863] The heat-dissipating layer containing H is formed by depositing a film containing silicon using a gas containing H. For example, the deposition atmosphere may contain H. When using the sputtering method, H is added to the sputtering gas. For example, plasma C When the VD method is used, H is contained in the CVD gas.

[0864] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0865] (Embodiment 26) A semiconductor device is a device that has elements having semiconductors.

[0866] The element having a semiconductor is, for example, a transistor, a resistor, a capacitor, a diode, etc. be.

[0867] The transistor is preferably, but not limited to, a field effect transistor.

[0868] The transistor is preferably, but not limited to, a thin film transistor.

[0869] Examples of the semiconductor device include a display device having a display element and a storage device having a memory element. , RFID, processors, etc., but are not limited to these.

[0870] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0871] (Embodiment 27) A second object of one embodiment of the present invention is to provide a semiconductor device having a novel structure. There are.

[0872] For example, the structures shown in Figures 3 to 30 are novel structures.

[0873] Therefore, for example, in FIG. 3 to FIG. 30, the oxide semiconductor layer 311 to the oxide semiconductor layer 31 9 etc. may not be in contact with the resin layer 600.

[0874] When the oxide semiconductor layers 311 to 319 and the like are not in contact with the resin layer 600, Holes are formed to allow the oxide semiconductor layers 311 to 319 to come into contact with the resin layer 600, etc. It would be better not to set it up.

[0875] Each of the oxide semiconductor layers 311 to 319 functions as a wiring. Since the space where the active layer is not formed is effectively utilized, the third The objective can also be achieved.

[0876] Moreover, for example, the structures shown in FIGS. 31 to 37 are novel structures.

[0877] Therefore, for example, in FIG. 31 to FIG. 37, the oxide semiconductor layer 350 and the like are formed as the resin layer 600. There is no need to make contact.

[0878] When the oxide semiconductor layer 350 and the like are not in contact with the resin layer 600, the oxide semiconductor layer 350 and the like 7. It is only necessary to provide no hole for contacting the insulating layer 600 with the resin layer 600.

[0879] In addition, since the oxide semiconductor layer 350 and the like can function as an electrode, the formation of an active layer Since unused space is utilized effectively, the third objective can also be achieved.

[0880] Moreover, for example, the structures shown in FIGS. 38 to 53 are novel structures.

[0881] Therefore, for example, in FIG. 38 to FIG. 53, the oxide semiconductor layer 1302, the oxide semiconductor layer The oxide semiconductor layer 1304 and the oxide semiconductor layer 1305 may not be in contact with the resin layer 1600 .

[0882] The oxide semiconductor layer 1302, the oxide semiconductor layer 1304, the oxide semiconductor layer 1305, etc. are When the oxide semiconductor layer 1302, the oxide semiconductor layer 1304, and the oxide semiconductor layer 1305 are not in contact with the oxide semiconductor layer 1600, It is only necessary to provide no holes for contacting the compound semiconductor layer 1305 etc. with the resin layer 1600 .

[0883] Since the oxide semiconductor layer 1302 and the like can function as an electrode, the oxide semiconductor layer 1302 and the like can be used as an active layer. Because it makes effective use of unused space, it also achieves a third objective.

[0884] In addition, the oxide semiconductor layer 1304 and the like can function as a resistor element. Because it effectively utilizes the unformed space, it also achieves the third purpose. do.

[0885] In addition, the oxide semiconductor layer 1305 and the like can function as an active layer. Because it makes effective use of unformed space, it also achieves a third purpose. .

[0886] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0887] (Embodiment 28) In another embodiment, a predetermined conductive layer is disposed between the inorganic insulating layer and the oxide semiconductor layer. An example is given.

[0888] That is, in another embodiment, a predetermined conductive layer is formed, and then an inorganic insulating layer is formed. An example was given.

[0889] On the other hand, a predetermined conductive layer may be disposed between the inorganic insulating layer and the resin layer.

[0890] That is, a predetermined conductive layer may be formed after forming an inorganic insulating layer.

[0891] For example, FIG. 60 shows a structure in which the inorganic insulating layer 50 is formed in FIG. In this example, a conductive layer 42 is formed.

[0892] For example, FIG. 61 shows a structure in which the inorganic insulating layer 50 is formed in FIG. In this example, a conductive layer 42 is formed.

[0893] For example, FIG. 62 shows a structure in which the inorganic insulating layer 50 is formed in FIG. In this example, a conductive layer 42 and a conductive layer 43 are formed.

[0894] For example, FIG. 63 shows a structure in which the inorganic insulating layer 50 is formed in FIG. 54, and then the conductive layer 41 and the conductive In this example, a conductive layer 42 and a conductive layer 43 are formed.

[0895] For example, FIG. 64 shows a structure in which the inorganic insulating layer 50 is formed in FIG. In this example, a conductive layer 42 and a conductive layer 43 are formed.

[0896] For example, FIG. 65 shows a structure in which the inorganic insulating layer 50 is formed in FIG. 55, and then the conductive layer 41 and This is an example in which a conductive layer 42 is formed.

[0897] For example, FIG. 66 shows a structure in which the inorganic insulating layer 50 is formed in FIG. 56, and then the conductive layer 41 and the conductive In this example, a conductive layer 42, a conductive layer 43, and a conductive layer 44 are formed.

[0898] For example, FIG. 67 shows a structure in which the inorganic insulating layer 50 is formed in FIG. In this example, a conductive layer 42, a conductive layer 43, and a conductive layer 44 are formed.

[0899] For example, FIG. 68 shows a structure in which the inorganic insulating layer 50 in FIG. 57 is formed, and then the conductive layer 41 and the conductive In this example, a conductive layer 42, a conductive layer 43, and a conductive layer 44 are formed.

[0900] For example, FIG. 69 shows a structure in which the inorganic insulating layer 50 is formed in FIG. 57, and then the conductive layer 41 and the conductive In this example, a conductive layer 42, a conductive layer 43, and a conductive layer 44 are formed.

[0901] 60 to 69, a conductive layer 41 is provided on an inorganic insulating layer 50. In FIG.

[0902] 60 to 69, a conductive layer 42 is provided on an inorganic insulating layer 50. In FIG.

[0903] 60 to 69, a resin layer 60 is provided on a conductive layer 41 and a conductive layer .

[0904] 60 to 69, the conductive layer 41 has a contact hole in the inorganic insulating layer 50. The insulating layer 32 is electrically connected to the oxide semiconductor layer 31 via the insulating layer 32 .

[0905] 60 to 69, the conductive layer 42 has a contact hole in the inorganic insulating layer 50. The insulating layer 32 is electrically connected to the oxide semiconductor layer 31 via the insulating layer 32 .

[0906] 62 to 64, a conductive layer 43 is provided between an inorganic insulating layer 50 and a resin layer 60. In FIG.

[0907] In FIG. 62, the oxide semiconductor layer 32 is formed on the inside of a hole provided in the inorganic insulating layer 50. The insulating layer 50 has a portion in contact with the resin layer 60 and is introduced into another hole provided in the inorganic insulating layer 50. The conductive layer 43 has a portion in contact with the conductive layer 43 .

[0908] In FIG. 63, the oxide semiconductor layer 32 is formed on the inside of a hole provided in the inorganic insulating layer 50. It has a portion in contact with the resin layer 60 and a portion in contact with the conductive layer 43 .

[0909] In FIG. 64, the oxide semiconductor layer 32 is formed on the inside of a hole provided in the inorganic insulating layer 50. The insulating layer 50 has a portion in contact with the resin layer 60 and a portion in contact with the conductive layer 43. The inner side of another hole provided in the other portion is provided with a portion in contact with the resin layer 60 and a portion in contact with the conductive layer 43. Yes.

[0910] FIG. 62 shows the contact points between the oxide semiconductor layer 32 and the resin layer 60 and the oxide semiconductor layer 32 and the conductive layer 61. In this example, the contact points with the conductive layer 43 are different.

[0911] 63 and 64 show the contact points between the oxide semiconductor layer 32 and the resin layer 60 and the oxide semiconductor layer The contact point between 32 and conductive layer 43 is an example of the same.

[0912] FIG. 63 shows an example in which the oxide semiconductor layer 32 and the conductive layer 43 are in contact with each other at one location, and FIG. This is an example in which the oxide semiconductor layer 32 and the conductive layer 43 are in contact with each other at a plurality of locations.

[0913] 66 to 69, the conductive layer 43 and the conductive layer 44 are disposed between the inorganic insulating layer 50 and the resin layer 60. It has 44.

[0914] 66 and 68, the oxide semiconductor layer 32 is formed by arranging a hole in the inorganic insulating layer 50. The inorganic insulating layer 50 has a portion in contact with the resin layer 60 on the inside thereof, and the inorganic insulating layer 50 has a portion in contact with the resin layer 60 on the inside thereof. It has a portion on the inside that contacts the conductive layer 43 .

[0915] 66 and 68, the oxide semiconductor layer 32 is formed by arranging a hole in the inorganic insulating layer 50. The inorganic insulating layer 50 has a portion in contact with the resin layer 60 on the inside thereof, and the inorganic insulating layer 50 has a portion in contact with the resin layer 60 on the inside thereof. It has a portion on the inside that contacts the conductive layer 44 .

[0916] 67 and 69, the oxide semiconductor layer 32 is formed by arranging a hole in the inorganic insulating layer 50. On the inside of the conductive layer 44, there is a portion in contact with the resin layer 60, a portion in contact with the conductive layer 43, and a portion in contact with the conductive layer 44. The part has

[0917] 66 and 68 show the contact points between the oxide semiconductor layer 32 and the resin layer 60 and the oxide semiconductor layer In this example, the contact points between the conductive layer 43 and the contact hole 32 are different.

[0918] 66 and 68 show the contact points between the oxide semiconductor layer 32 and the resin layer 60 and the oxide semiconductor layer The contact points between the conductive layer 44 and the contact hole 32 are different examples.

[0919] 67 and 69 show the contact points between the oxide semiconductor layer 32 and the resin layer 60 and the oxide semiconductor layer A contact portion between the oxide semiconductor layer 32 and the conductive layer 43 and a contact portion between the oxide semiconductor layer 32 and the conductive layer 44 are Here's the same example.

[0920] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0921] (Embodiment 29) A small amount of H2O may penetrate into the oxide semiconductor layer through the inorganic insulating layer.

[0922] Therefore, by providing a protective layer, it is possible to suppress the intrusion of H2O into the oxide semiconductor layer. can be done.

[0923] In particular, when a layer above the inorganic insulating layer contains H2O, or when a layer above the inorganic insulating layer contains H2O, When the gas present above contains H2O, the H2O is likely to penetrate into the oxide semiconductor layer.

[0924] For example, FIG. 70 shows an example in which a protective layer 51 and the like are added to FIG.

[0925] For example, FIG. 71 shows an example in which protective layers 51 and 52 are added to FIG.

[0926] For example, FIG. 72 shows an example in which a protective layer 51 and the like are added to FIG.

[0927] For example, FIG. 73 shows an example in which protective layers 51 and 52 are added to FIG.

[0928] For example, FIG. 74 shows an example in which a protective layer 51 and the like are added to FIG.

[0929] For example, FIG. 75 shows an example in which protective layers 51 and 52 are added to FIG.

[0930] 70 and 71, a protective layer 51 is provided on an oxide semiconductor layer 31. A conductive layer 41 is provided on the oxide semiconductor layer 31 and the protective layer 51. The conductive layer 42 is disposed on the conductive layer 41 , and an inorganic insulating layer 50 is disposed on the conductive layer 41 and the conductive layer 42 .

[0931] In FIG. 71, a protective layer 52 is provided on an oxide semiconductor layer 33, and an inorganic insulating layer is provided on the protective layer 52. It has a layer 50.

[0932] 72 and 73, on the oxide semiconductor layer 31, on the conductive layer 41, and on the conductive layer 42 A protective layer 51 is provided on the insulating layer 50 .

[0933] In FIG. 73, a protective layer 52 is provided on an oxide semiconductor layer 33, and an inorganic insulating layer is provided on the protective layer 52. It has a layer 50.

[0934] 74 and 75, a protective layer 51 is provided on an inorganic insulating layer 50, and a resin is provided on the protective layer 51. It has a fat layer 60.

[0935] In FIG. 75, a protective layer 52 is provided on an inorganic insulating layer 50, and a resin layer 60 is provided on the protective layer 52. Yes.

[0936] The protective layer 51 has a region overlapping with the oxide semiconductor layer 31 .

[0937] The protective layer 52 has a region overlapping with the oxide semiconductor layer 33 .

[0938] The protective layer 51 and the protective layer 52 are separated, but the protective layer 51 and the protective layer 52 are bonded together. It may also be a single protective layer.

[0939] When the protective layer 51 and the protective layer 52 are combined to form one protective layer, the one protective layer is made of an oxide. It has a region overlapping with the semiconductor layer 31 and a region overlapping with the oxide semiconductor layer 33 .

[0940] Moreover, only one of the protective layer 51 and the protective layer 52 may be disposed.

[0941] The protective layer can be an inorganic insulating layer, a semiconductor layer, a conductive layer, or the like.

[0942] The inorganic insulating layer, the semiconductor layer, the conductive layer, etc. may be the same as those described in other embodiments. There can be.

[0943] The protective layer is preferably a layer having heat dissipation properties.

[0944] However, when the protective layer 51 has a portion in contact with the oxide semiconductor layer 31, or when the protective layer 5 1 has a portion in contact with the conductive layer 41, or the protective layer 51 has a portion in contact with the conductive layer 42. When the protective layer has the insulating portion, the protective layer is preferably an inorganic insulating layer.

[0945] The protective layer 51 and the protective layer 52 may be formed in the same layer or in different layers.

[0946] The protective layer 51 and the protective layer 52 may be formed of the same material or different materials. .

[0947] When the protective layer 51 and the protective layer 52 are formed in the same process, the protective layer 5 1 and protective layer 52 can be formed in the same layer and from the same material.

[0948] When the protective layer 51 and the protective layer 52 are different layers, for example, One of the protective layers 51 and 52 is disposed above the inorganic insulating layer 50, and the other of the protective layer 51 and the protective layer 52 is disposed above the inorganic insulating layer 50. It may be disposed below layer 50.

[0949] For example, a configuration in which some of the configurations in FIGS. 70 to 75 are appropriately combined can be applied. .

[0950] As described above, by providing the protective layer, the thickness of the upper side of the oxide semiconductor layer is increased. Therefore, it is possible to suppress the intrusion of H 2 O from the upper part of the oxide semiconductor layer.

[0951] A protective layer may be added to the structures shown in FIGS.

[0952] For example, FIG. 126(A) shows a structure in which a protective layer 51 is provided between an oxide semiconductor layer 31 and an inorganic insulating layer 50. This is an example where

[0953] For example, FIG. 126(B) shows an example in which an inorganic insulating layer 50 is provided between an oxide semiconductor layer 31 and a protective layer 51. This is an example where

[0954] For example, FIG. 126(C) shows a structure in which the inorganic insulating layer 50, the conductive layer 41, and the conductive layer 42 are provided. In this example, a protective layer 51 is provided.

[0955] When the protective layer 52 is provided, the protective layer 51 and the protective layer 52 may be formed in the same layer or in different layers. Alternatively, the layer may be formed as follows.

[0956] When the protective layer 52 is provided, the protective layer 51 and the protective layer 52 may be formed of the same material. It may be formed from other materials.

[0957] When the protective layer 52 is provided, the protective layer 51 and the protective layer 52 are formed in the same process, so that the number of processes is reduced. This is preferable because it can reduce

[0958] When the protective layer 52 is provided, one of the protective layer 51 and the protective layer 52 is provided above the inorganic insulating layer 50. The other of the protective layer 51 and the protective layer 52 is disposed below the inorganic insulating layer 50. This can be done.

[0959] Moreover, the protective layer 51 and the protective layer 52 may be combined into one protective layer.

[0960] The protective layer is in a state where it is electrically isolated from the wiring or electrodes (floating state, electrically In this case, it is preferable that the input terminals are in a state of being completely isolated from each other, since this has little effect on the circuit operation.

[0961] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0962] (Embodiment 30) In the other embodiments, the resin layer is provided on the entire surface of the substrate. is also good.

[0963] For example, FIG. 76 shows an example in which the resin layer 60 in FIG. 1 is provided locally.

[0964] For example, FIG. 77 shows an example in which the resin layer 60 in FIG. 2 is provided locally.

[0965] For example, FIG. 78 shows an example in which the resin layer 60 in FIG. 60 is provided locally.

[0966] For example, FIG. 79 shows an example in which the resin layer 60 in FIG. 61 is provided locally.

[0967] For example, FIG. 80 shows an example in which the resin layer 60 in FIG. 70 is provided locally.

[0968] For example, FIG. 81 shows an example in which the resin layer 60 in FIG. 71 is provided locally.

[0969] For example, FIG. 82 shows an example in which the resin layer 60 in FIG. 72 is provided locally.

[0970] For example, FIG. 83 shows an example in which the resin layer 60 in FIG. 73 is provided locally.

[0971] For example, FIG. 84 shows an example in which the resin layer 60 in FIG. 74 is provided locally.

[0972] For example, FIG. 85 shows an example in which the resin layer 60 in FIG. 75 is provided locally.

[0973] The same configuration can be applied to the embodiment in which the configuration of FIG. 126 is applied. .

[0974] The resin layer 60 has a portion in contact with the oxide semiconductor layer 32 .

[0975] It is preferable that the resin layer 60 does not overlap the oxide semiconductor layer 31 at all.

[0976] The resin layer 60 has a region overlapping with the oxide semiconductor layer 31 and a region not overlapping with the oxide semiconductor layer 31. and a region.

[0977] It is preferable that the resin layer 60 does not overlap the oxide semiconductor layer 33 at all.

[0978] The resin layer 60 has a region overlapping with the oxide semiconductor layer 33 and a region not overlapping with the oxide semiconductor layer 33. and a region.

[0979] Since the resin layer 60 has a region that does not overlap with the oxide semiconductor layer 31, the inorganic insulating layer 5 The amount of H2O that penetrates into the oxide semiconductor layer 31 via 0 can be reduced.

[0980] In the case where the resin layer 60 does not overlap the oxide semiconductor layer 31 at all, the oxide semiconductor layer 31 is Therefore, the amount of H2O that penetrates into the oxide semiconductor layer 31 can be significantly reduced.

[0981] Since the resin layer 60 has a region that does not overlap with the oxide semiconductor layer 33, the inorganic insulating layer 5 The amount of H2O that penetrates into the oxide semiconductor layer 33 via 0 can be reduced.

[0982] In the case where the resin layer 60 does not overlap the oxide semiconductor layer 33 at all, the oxide semiconductor layer 33 is Therefore, the amount of H2O that penetrates into the oxide semiconductor layer 33 can be significantly reduced.

[0983] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[0984] (Embodiment 31) A layer containing hydrogen may be used in place of the resin layer.

[0985] For example, FIG. 86 shows an example in which a layer 88 containing hydrogen is provided instead of the resin layer 60 in FIG. It is.

[0986] For example, FIG. 87 shows an example in which a layer 88 containing hydrogen is provided instead of the resin layer 60 in FIG. It is.

[0987] For example, FIG. 88 shows a structure in which a layer 88 containing hydrogen is provided instead of the resin layer 60 in FIG. Here is an example.

[0988] For example, FIG. 89 shows a structure in which a layer 88 containing hydrogen is provided instead of the resin layer 60 in FIG. Here is an example.

[0989] For example, FIG. 90 shows a structure in which a layer 88 containing hydrogen is provided instead of the resin layer 60 in FIG. Here is an example.

[0990] For example, FIG. 91 shows a structure in which a layer 88 containing hydrogen is provided instead of the resin layer 60 in FIG. Here is an example.

[0991] For example, FIG. 92 shows a structure in which a layer 88 containing hydrogen is provided instead of the resin layer 60 in FIG. Here is an example.

[0992] For example, FIG. 93 shows a structure in which a layer 88 containing hydrogen is provided instead of the resin layer 60 in FIG. Here is an example.

[0993] For example, FIG. 94 shows a structure in which a layer 88 containing hydrogen is provided instead of the resin layer 60 in FIG. Here is an example.

[0994] For example, FIG. 95 shows a structure in which a layer 88 containing hydrogen is provided instead of the resin layer 60 in FIG. Here is an example.

[0995] For example, FIG. 96 shows a structure in which a layer 88 containing hydrogen is provided instead of the resin layer 60 in FIG. Here is an example.

[0996] For example, FIG. 97 shows a structure in which a layer 88 containing hydrogen is provided instead of the resin layer 60 in FIG. Here is an example.

[0997] For example, FIG. 98 shows a structure in which a layer 88 containing hydrogen is provided instead of the resin layer 60 in FIG. Here is an example.

[0998] For example, FIG. 99 shows a structure in which a layer 88 containing hydrogen is provided instead of the resin layer 60 in FIG. Here is an example.

[0999] For example, FIG. 100 shows a structure in which a layer 88 containing hydrogen is provided instead of the resin layer 60 in FIG. This is an example.

[1000] For example, FIG. 101 shows a structure in which a layer 88 containing hydrogen is provided instead of the resin layer 60 in FIG. This is an example.

[1001] For example, FIG. 102 shows a structure in which a layer 88 containing hydrogen is provided instead of the resin layer 60 in FIG. This is an example.

[1002] For example, FIG. 103 shows a structure in which a layer 88 containing hydrogen is provided instead of the resin layer 60 in FIG. This is an example.

[1003] For example, FIG. 104 shows a structure in which a layer 88 containing hydrogen is provided instead of the resin layer 60 in FIG. This is an example.

[1004] For example, FIG. 105 shows a structure in which a layer 88 containing hydrogen is provided instead of the resin layer 60 in FIG. This is an example.

[1005] The same configuration can be applied to the embodiment in which the configuration of FIG. 126 is applied. .

[1006] The hydrogen-containing layer 88 preferably contains more H than the inorganic insulating layer 50 .

[1007] The hydrogen-containing layer 88 is an insulating layer (inorganic insulating layer, resin layer, etc.), a semiconductor layer, a conductive layer, etc. There can be.

[1008] The insulating layer, the semiconductor layer, the conductive layer, and the like may be, for example, any of those described in other embodiments. It is possible.

[1009] The layer 88 containing hydrogen is more preferably a layer having heat dissipation properties.

[1010] The hydrogen-containing layer 88 can be formed, for example, as follows.

[1011] For example, after forming a predetermined layer (insulating layer, semiconductor layer, conductive layer, etc.), H By incorporating a substance containing hydrogen, a layer containing hydrogen can be formed.

[1012] For example, there are methods such as ion doping or ion implantation of a substance containing H, but these are limited. do not have.

[1013] For example, when forming a specific layer (insulating layer, semiconductor layer, conductive layer, etc.), H is added to the deposition gas. By adding a substance containing hydrogen, a layer containing hydrogen can be formed.

[1014] For example, when forming a specific layer by sputtering, a substance containing H is used in the deposition gas. and a method of using a substance containing H in the deposition gas when forming a specific layer by the CVD method. is not limited to.

[1015] Substances containing H include, but are not limited to, H2, H2O, PH3, and B2H6. do not have.

[1016] When H in the oxide semiconductor layer 32 is released, it bonds with O in the oxide semiconductor layer 32. It may be released in a deformed state.

[1017] Therefore, H2O may be released from the oxide semiconductor layer 32.

[1018] Therefore, the oxide semiconductor layer 33 is provided between the oxide semiconductor layer 31 and the oxide semiconductor layer 32. It is preferable to place

[1019] In addition, by providing the protective layer 51, the hydrogen-containing layer 88 can be prevented from reaching the oxide semiconductor layer 31. This can suppress the amount of H that reaches the

[1020] In addition, by providing the protective layer 52, the hydrogen-containing layer 88 can be prevented from reaching the oxide semiconductor layer 33. This can suppress the amount of H that reaches the

[1021] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above.

[1022] (Embodiment 32) When the resin layer or the layer containing hydrogen is provided locally, the resin layer or the layer containing hydrogen is disposed on the inorganic insulating layer. It can be placed under.

[1023] When a resin layer or a layer containing hydrogen is provided under an inorganic insulating layer, a hole reaching the oxide semiconductor layer is formed. It is not necessary to provide it on the inorganic insulating layer.

[1024] In the etching step for forming a hole reaching the oxide semiconductor layer, It may disappear.

[1025] Therefore, by providing a resin layer or a layer containing hydrogen under the inorganic insulating layer, the oxide semiconductor This is preferable because it reduces the possibility that the conductor layer will disappear.

[1026] For example, FIG. 106 shows a case where a bond is formed between the oxide semiconductor layer 32 and the inorganic insulating layer 50 in FIG. This is an example in which a fat layer 60 is provided.

[1027] For example, FIG. 107 shows a case where a bond is formed between the oxide semiconductor layer 32 and the inorganic insulating layer 50 in FIG. This is an example in which a fat layer 60 is provided.

[1028] For example, FIG. 108 shows a case where a bond is formed between the oxide semiconductor layer 32 and the inorganic insulating layer 50 in FIG. This is an example in which a fat layer 60 is provided.

[1029] For example, FIG. 109 shows a case where a bond is formed between the oxide semiconductor layer 32 and the inorganic insulating layer 50 in FIG. This is an example in which a fat layer 60 is provided.

[1030] For example, FIG. 110 shows a case where a bond is formed between the oxide semiconductor layer 32 and the inorganic insulating layer 50 in FIG. This is an example in which a fat layer 60 is provided.

[1031] For example, FIG. 111 shows a case where a bond is formed between the oxide semiconductor layer 32 and the inorganic insulating layer 50 in FIG. This is an example in which a fat layer 60 is provided.

[1032] For example, FIG. 112 shows a case where a bond is formed between the oxide semiconductor layer 32 and the inorganic insulating layer 50 in FIG. This is an example in which a fat layer 60 is provided.

[1033] For example, FIG. 113 shows a case where a bond is formed between the oxide semiconductor layer 32 and the inorganic insulating layer 50 in FIG. This is an example in which a fat layer 60 is provided.

[1034] For example, FIG. 114 shows a case where a bond is formed between the oxide semiconductor layer 32 and the inorganic insulating layer 50 in FIG. This is an example in which a fat layer 60 is provided.

[1035] For example, FIG. 115 shows a case where a bond is formed between the oxide semiconductor layer 32 and the inorganic insulating layer 50 in FIG. This is an example in which a fat layer 60 is provided.

[1036] For example, FIG. 116 shows a case where water is deposited between the oxide semiconductor layer 32 and the inorganic insulating layer 50 in FIG. This is an example in which a layer 88 containing an element is provided.

[1037] For example, FIG. 117 shows a case where water is deposited between the oxide semiconductor layer 32 and the inorganic insulating layer 50 in FIG. This is an example in which a layer 88 containing an element is provided.

[1038] For example, FIG. 118 shows a case where water is deposited between the oxide semiconductor layer 32 and the inorganic insulating layer 50 in FIG. This is an example in which a layer 88 containing an element is provided.

[1039] For example, FIG. 119 shows a case where water is formed between the oxide semiconductor layer 32 and the inorganic insulating layer 50 in FIG. This is an example in which a layer 88 containing an element is provided.

[1040] For example, FIG. 120 shows a structure in which a layer is formed between the oxide semiconductor layer 32 and the inorganic insulating layer 50 in FIG. This is an example in which a layer 88 containing hydrogen is provided.

[1041] For example, FIG. 121 shows a case where a semiconductor layer 32 is formed between the oxide semiconductor layer 32 and the inorganic insulating layer 50 in FIG. This is an example in which a layer 88 containing hydrogen is provided.

[1042] For example, FIG. 122 shows a case where a layer is formed between the oxide semiconductor layer 32 and the inorganic insulating layer 50 in FIG. This is an example in which a layer 88 containing hydrogen is provided.

[1043] For example, FIG. 123 shows a case where a semiconductor layer is formed between the oxide semiconductor layer 32 and the inorganic insulating layer 50 in FIG. This is an example in which a layer 88 containing hydrogen is provided.

[1044] For example, FIG. 124 shows a structure in which a layer is formed between the oxide semiconductor layer 32 and the inorganic insulating layer 50 in FIG. This is an example in which a layer 88 containing hydrogen is provided.

[1045] For example, FIG. 125 shows a structure in which a layer is formed between the oxide semiconductor layer 32 and the inorganic insulating layer 50 in FIG. This is an example in which a layer 88 containing hydrogen is provided.

[1046] The same configuration can be applied to the embodiment in which the configuration of FIG. 126 is applied. .

[1047] At least a part of the configuration described in this embodiment may be the same as the configuration described in other embodiments. The above can be implemented in combination with at least a part of the above. [Explanation of symbols]

[1048] 10 Substrate 21 Conductive layer 22 Conductive layer 30 Insulating layer 31 Oxide semiconductor layer 32 Oxide semiconductor layer 33 Oxide semiconductor layer 41 Conductive layer 42 Conductive layer 43 Conductive Layer 44 Conductive Layer 50 Inorganic insulating layer 51 Protective layer 52 Protective layer 55 Functional Layer 56 Insulating Layer 60 Resin layer 70 Conductive Layer 88 Hydrogen-containing layer 99 Heat dissipating layer 100 Substrates 110 Substrate 201 Conductive layer 202 Conductive layer 300 Insulation layer 301 Oxide semiconductor layer 302 Oxide semiconductor layer 303 Oxide semiconductor layer 304 Oxide semiconductor layer 305 Oxide semiconductor layer 306 Oxide semiconductor layer 311 Oxide semiconductor layer 312 Oxide semiconductor layer 313 Oxide semiconductor layer 314 Oxide semiconductor layer 315 Oxide semiconductor layer 316 Oxide semiconductor layer 317 Oxide Semiconductor Layer 318 Oxide Semiconductor Layer 319 Oxide Semiconductor Layer 321 Oxide semiconductor layer 322 Oxide semiconductor layer 323 Oxide Semiconductor Layer 324 Oxide semiconductor layer 325 Oxide Semiconductor Layer 326 Oxide Semiconductor Layer 327 Oxide Semiconductor Layer 328 Oxide Semiconductor Layer 329 Oxide Semiconductor Layer 330 Oxide semiconductor layer 331 Oxide semiconductor layer 332 Oxide semiconductor layer 350 Oxide semiconductor layer 351 Oxide semiconductor layer 352 Oxide semiconductor layer 401 Conductive layer 402 Conductive layer 403 Conductive layer 411 Conductive layer 412 Conductive layer 413 Conductive Layer 414 Conductive layer 415 Conductive Layer 416 Conductive Layer 450 Conductive layer 500 Inorganic insulating layer 510 Insulating layer 561 hole 562 holes 563 holes 564 holes 564a hole 564b hole 564c hole 564d hole 564e hole 564f hole 564g hole 564h hole 564i hole 564j Hole 564k holes 564l hole 564m hole 564n hole 565 holes 566 holes 567 holes 568 holes 569 hole 551 Contact Hole 552 Contact Hole 553 Contact Hole 554 Contact Hole 555 Contact Hole 556 Contact Hole 600 Resin layer 701 Conductive layer 702 Conductive layer 703 Conductive layer 704 Conductive layer 705 Conductive layer 706 Conductive layer 707 Conductive Layer 708 Conductive Layer 709 Conductive layer 710 Conductive layer 711 Conductive layer 712 Conductive layer 800 Liquid crystal layers 900 Conductive layer 1100 Substrate 1201 Conductive layer 1202 Conductive layer 1203 Conductive layer 1300 Insulation layer 1301 Oxide semiconductor layer 1302 Oxide semiconductor layer 1303 Oxide semiconductor layer 1304 Oxide semiconductor layer 1305 Oxide semiconductor layer 1351 Oxide semiconductor layer 1352 Oxide semiconductor layer 1401 Conductive layer 1402 Conductive layer 1403 Conductive layer 1404 Conductive layer 1405 Conductive layer 1406 Conductive layer 1407 Conductive layer 1408 Conductive layer 1409 Conductive layer 1500 Inorganic insulating layer 1701 Conductive layer 1702 Conductive layer 1600 Resin layer 1800 Layer containing organic compounds 1900 Conductive layer Tr Transistor Tr1 Transistor Tr2 Transistor Tr3 Transistor Tr4 Transistor Tr5 Transistor Tr6 Transistor CL wiring G wiring G1 Wiring G2 Wiring G3 Wiring IN wiring OUT wiring S wiring RE wiring V wiring V1 wiring V2 wiring Vdd wiring Vss wiring LC Liquid Crystal Device EL light emitting element R Resistance element C Capacitive element C1 Capacitive element C2 Capacitor element

Claims

1. A pixel includes a transistor, a liquid crystal element, and a capacitor. A display device in which one of a source and a drain of the transistor is always electrically connected to a pixel electrode of the liquid crystal element, a first conductive film having a function as a gate electrode of the transistor and also having a function as a gate wiring; a first semiconductor film having a region disposed on the first conductive film and having a channel formation region of the transistor; a second semiconductor film having a region disposed on the first conductive film; a second conductive film having a region disposed on the first semiconductor film via an insulating film and functioning as the pixel electrode; a third conductive film having a region disposed on the second semiconductor film and having a region in contact with an upper surface of the second semiconductor film; a fourth conductive film having a region disposed above the third conductive film via the insulating film and functioning as the pixel electrode of an adjacent pixel; the first conductive film has a function as one electrode of the capacitor element of the adjacent pixel, the second semiconductor film has a function as the other electrode of the capacitor element of the adjacent pixel; each of the second conductive film and the fourth conductive film has a region in contact with an upper surface of the insulating film; the fourth conductive film has a region that is in contact with an upper surface of the third conductive film in a region that does not overlap with the first conductive film, the second semiconductor film has a region that does not overlap with the first conductive film, the second semiconductor film does not overlap with the second conductive film; the second semiconductor film has a region that does not overlap with the third conductive film; Display device.

2. A pixel includes a transistor, a liquid crystal element, and a capacitor. A display device in which one of a source and a drain of the transistor is always electrically connected to a pixel electrode of the liquid crystal element, a first conductive film having a function as a gate electrode of the transistor and also having a function as a gate wiring; a first semiconductor film having a region disposed on the first conductive film and having a channel formation region of the transistor; a second semiconductor film having a region disposed on the first conductive film; a second conductive film having a region disposed on the first semiconductor film via an insulating film and functioning as the pixel electrode; a third conductive film having a region disposed on the second semiconductor film and having a region in contact with an upper surface of the second semiconductor film; a fourth conductive film having a region disposed above the third conductive film via the insulating film and functioning as the pixel electrode of an adjacent pixel; the first conductive film has a function as one electrode of the capacitor element of the adjacent pixel, the second semiconductor film has a function as the other electrode of the capacitor element of the adjacent pixel; each of the second conductive film and the fourth conductive film has a region in contact with an upper surface of the insulating film; the fourth conductive film has a region that is in contact with an upper surface of the third conductive film in a region that does not overlap with the first conductive film, the second semiconductor film has a region that does not overlap with the first conductive film, the second semiconductor film does not overlap with the second conductive film; the second semiconductor film has a region that does not overlap with the third conductive film, a region of the third conductive film that is in contact with the second semiconductor film overlaps with the first conductive film; Display device.

3. In claim 1 or 2, the third conductive film has a stacked structure; Display device.

Images