Oscillator, manufacturing method thereof and electronic equipment

Abstract

To provide an oscillator which can be miniaturized and has high reliability, a manufacturing method thereof, and electronic equipment including the oscillator.SOLUTION: An oscillator 30 includes: a vibrator 31 which includes a vibration element 311 and a hermetically sealed structure 312 sealed at the outer periphery of the vibration element; an oscillation chip 32 arranged on one side of the hermetically sealed structure; an insulating layer 33 which covers at least one side of the oscillation chip and the hermetically sealed structure and includes a first conductive hole where a conductive material is formed; and a first electrode structure 34 which is arranged on the insulating layer and electrically connected with the oscillation chip through the conductive material in the first conductive hole 331.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to the technical field of oscillators, and more particularly to an oscillator and a manufacturing method thereof, and an electronic device equipped with the oscillator. [Background technology]

[0002] Oscillators have been mass-produced for a long time (more than 100 years) since their invention, and are widely used in various electronic products. In conventional technology, oscillators require hermetic sealing using a ceramic base. Specifically, in the manufacturing process, for example, the quartz crystal unit and the oscillation chip can be packaged together via the ceramic base. Also, in order to adjust the frequency accuracy of the quartz crystal unit itself from % to + / - 10ppm, it is necessary to perform frequency fine-tuning such as ion etching while measuring the oscillator itself.

[0003] However, as an important reference source, oscillators have strict requirements not only for their performance (low phase noise, high stability, high reliability), but also for their package size. Therefore, various packaging methods corresponding to various types of miniaturized oscillators have been developed. In addition, the demand for miniaturization has led to oscillators made with silicon-based resonators dominating the market for miniaturized oscillators. Summary of the Invention [Problem to be solved by the invention]

[0004] Therefore, it is necessary to provide an oscillator that can be made smaller, a manufacturing method thereof, and electronic equipment that includes this oscillator. [Means for solving the problem]

[0005] In a first aspect, an oscillator according to an embodiment of the present application includes a vibrator including a vibration element and an airtight sealing structure enclosed around the outer periphery of the vibration element, an oscillation chip arranged on one side of the airtight sealing structure, an insulating layer covering the oscillation chip and at least one side of the airtight sealing structure and having a first conductive hole in which a conductive material is formed, and a first electrode structure provided in the insulating layer and electrically connected to the oscillation chip via the conductive material in the first conductive hole.

[0006] In one embodiment, the resonator is a quartz crystal resonator in a ceramic package, and the hermetically sealed structure includes a ceramic base having a cavity, a cover plate coated on the ceramic base, and a second electrode structure provided on the ceramic base, the ceramic base is provided with a conductor structure, the resonator element is provided in the cavity and connected to the ceramic base via an adhesive, and the second electrode structure is further electrically connected to the conductor structure and the oscillation chip.

[0007] In one embodiment, the resonator is a full crystal package crystal resonator; the hermetic sealing structure includes a first seal member provided on one side of the vibration element, a second seal member provided on the other side of the vibration element, and a second electrode structure provided on the first seal member; the first seal member, the vibration element, and the second seal each include a quartz material; the second electrode structure is electrically connected to the oscillation chip, the oscillation chip is provided on the first sealing member and is electrically connected to the second electrode structure, The insulating layer covers the oscillation chip and the first sealing member.

[0008] In one embodiment, the vibrator is a silicon-based vibrator that is fully sealed with silicon, and the hermetic sealing structure includes a first seal member provided on one side of the vibrating element, a second seal member provided on the other side of the vibrating element, and a second electrode structure provided on the first seal member; the first seal member, the vibration element, and the second seal member all contain a silicon material; the second electrode structure is electrically connected to the oscillation chip, and the vibrator is provided on a first surface of the oscillation chip; The insulating layer covers the vibrator, a first surface of the oscillator chip, a second surface of the oscillator chip facing the opposite side to the first surface, and a side surface connected between the first surface and the second surface.

[0009] In one embodiment, the insulating layer further has a second conductive hole, a conductive material is formed in the second conductive hole, and the second electrode structure is electrically connected to the oscillator chip via the conductive material in the second conductive hole.

[0010] In one embodiment, the insulating layer is provided on at least one side of the oscillation chip and the hermetic sealing structure by a first semiconductor deposition process, the first conductive hole is formed in the insulating layer by a semiconductor etching process, the conductive material in the first conductive hole is formed in the first conductive hole by a second semiconductor deposition process, and the first electrode structure is formed in the insulating layer by a third semiconductor deposition process.

[0011] In a second aspect, the present invention further provides a method for manufacturing an oscillator, the method comprising the steps of: preparing an oscillator chip; preparing a vibrator including a vibration element and a hermetically sealed structure enclosed around an outer periphery of the vibration element, and disposing the vibrator on one side of the oscillation chip; forming an insulating layer having a first conductive hole provided with a conductive material on at least one side of the oscillation chip and the hermetic sealing structure; forming a first electrode structure on the insulating layer, and allowing the first electrode structure to be electrically connected to the oscillation chip through the conductive material in the first conductive hole.

[0012] In one embodiment, the resonator is a ceramic packaged crystal resonator, an all-crystal packaged crystal resonator, or an all-silicon sealed silicon-based resonator; the insulating layer is deposited on at least one side of the oscillation chip and the hermetic sealing structure by a first semiconductor deposition process, and the first conductive hole is formed in the insulating layer by a semiconductor etching process; The conductive material in the first via is formed in the first via by a second semiconductor deposition process, and the first electrode structure is formed on the insulating layer by a third semiconductor deposition process.

[0013] In one embodiment, the method for manufacturing the oscillator includes: providing a substrate; the insulating layer includes a base portion and a covering portion; The step of forming an insulating layer having a first conductive hole on at least one side of the oscillation chip and the hermetic sealing structure further includes: forming the base portion on the substrate and providing a first surface of the oscillation chip on the base portion; forming a covering portion on a second surface of the oscillator chip facing an opposite side to the first surface, a side surface connected between the first surface and the second surface, and the vibrator, and forming the first conductive hole and a conductive material in the first conductive hole on the covering portion; wherein the base portion and the covering portion are both formed by a semiconductor deposition process; The method for manufacturing the oscillator further includes the step of removing the substrate.

[0014] In a third aspect, the present invention further provides an electronic device including a circuit board on which an oscillator according to any one of the above aspects is provided. Effect of the Invention

[0015] In the oscillator and its manufacturing method according to the present invention, and the electronic device equipped with the oscillator, the oscillation chip is directly installed on one side of the package structure of the already packaged oscillator, and further, the sealing between the oscillator and the oscillation chip is realized through an insulating layer, and there is no need to install a carrier base and its cavity for packaging the oscillator and the oscillation chip, and the problem that it is difficult to miniaturize the oscillator due to the carrier base and its cavity can be avoided, and the packaging of the miniaturized oscillator can be realized. In addition, since the insulating layer is covered on the oscillation chip, the oscillation chip is not exposed, and the oscillation chip can be better protected. Furthermore, the first electrode structure is provided on the insulating layer, and can respond to the stress generated from the client terminal side on which the oscillator is placed on the circuit board, and has a buffering role, thereby improving the reliability of the oscillator and the electronic device having the oscillator. In particular, the oscillator is a silicon-based oscillator sealed with all silicon, and its size is smaller, and the size of the finally obtained oscillator is also smaller. In addition, the structural position design of the insulating layer also improves the airtightness of the oscillator. [Brief description of the drawings]

[0016] [Figure 1] FIG. 1 is a schematic diagram of a cross-sectional structure of an oscillator according to a related art. [Diagram 2] FIG. 1 is a schematic diagram of a cross-sectional structure of an oscillator of another related art. [Diagram 3] FIG. 2 is a schematic diagram of a cross-sectional structure of an oscillator provided by a first embodiment of the present application. [Figure 4] FIG. 2 is a schematic top view of an oscillator provided according to a first embodiment of the present application. [Diagram 5] FIG. 2 is a schematic bottom view of an oscillator provided according to a first embodiment of the present application. [Figure 6] FIG. 4 is a schematic diagram of a cross-sectional structure of an oscillator provided by a second embodiment of the present application. [Figure 7] FIG. 11 is a schematic diagram of a cross-sectional structure of an oscillator provided by a third embodiment of the present application. [Figure 8] 11 is a flowchart of a method for manufacturing an oscillator provided according to a fourth embodiment of the present application. [Figure 9] FIG. 13 is a block diagram of an electronic device provided according to a fifth embodiment of the present application. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0017] As shown in Fig. 1, in an oscillator 10 of the related art, a single cavity is formed using a ceramic base 13, and a resonator 11 and an oscillation chip 12 are mounted on different layers. In general, the resonator 11 can be a quartz crystal resonator having piezoelectric properties, and is connected to the ceramic base 13 using a conductive medium such as conductive silver paste 15. In addition, since the oscillation chip 12 and the quartz crystal resonator 11 are electrically connected via the ceramic base 13, the pins of the oscillation chip 12 can be measured through the electrode structure 14 (e.g., solder pad) at the bottom of the ceramic base 13, and the progress of the frequency fine-tuning process can be ensured.

[0018] 2, in an oscillator 20 of another related art, a ceramic base 23 can form an H-shaped upper and lower double cavity for respectively mounting an oscillation chip 22 and a resonator 21. The advantage of the H-shape is that the arrangement spaces of the oscillation chip 22 and the resonator 21 are independent under a compact and tense space.

[0019] As shown in Figures 1 and 2, no matter how much it is compressed, the carrier substrate such as the ceramic substrate 13, 23 must have at least a boss for mounting the oscillator 11, 21, and the pins of the oscillator chip 12, 22 must be connected through the electrode structure 14 at the bottom of the ceramic substrate 13, 23. However, the inventors have found that there are some drawbacks when adopting the above-mentioned packaging method of Figures 1 and 2. Specifically, there is a certain limit to the miniaturization of the oscillator chip 12, 22, and the cavity space must be so large, and the wall thickness of the ceramic substrate 13, 23 can only be extruded more and more narrow, and the electrode structure 14, 24 is also relatively narrow. Even the most advanced products of some international head manufacturers have a technical bottleneck that the oscillator cannot be miniaturized.

[0020] According to the above-mentioned packaging method, it is difficult to miniaturize the oscillator chips 12, 22, which makes it difficult to miniaturize the cavities of the ceramic bases 13, 23, which leads to a stagnation in the progress of miniaturization of the entire oscillators 10, 20. In addition, in other related technologies, there is a technical problem that it is difficult to realize a miniaturized package for silicon-based oscillators as well.

[0021] In view of this, the present application further proposes an oscillator structure and its manufacturing method, which can achieve a miniaturized package and obtain an oscillator of smaller size.

[0022] Hereinafter, an oscillator provided according to an embodiment of the present invention and a method for manufacturing the same will be described in further detail with reference to FIGS.

[0023] <Example 1> As shown in Fig. 3 to Fig. 5, Fig. 3 is a schematic diagram of a cross-sectional structure of an oscillator 30 provided by Example 1 of the present application. Fig. 4 is a schematic top view of the oscillator 30 provided by Example 1 of the present application. Fig. 5 is a schematic bottom view of the oscillator 30 provided by Example 1 of the present application. The oscillator 30 includes a resonator 31, an oscillation chip 32, an insulating layer 33, and a first electrode structure 34.

[0024] The vibrator 31 includes a vibrating element 311 and an airtight sealing structure 312 sealed around the outer periphery of the vibrating element 311. The vibrator 31 is an already packaged vibrator element. In this embodiment, the vibrator 31 will be mainly described as a ceramic packaged crystal vibrator.

[0025] The oscillator chip 32 may be provided on one side of the hermetic sealing structure 312 and electrically connected to the hermetic sealing structure 312 .

[0026] The insulating layer 33 covers at least one side of the oscillation chip 32 and the airtight sealing structure 312, and has a first conductive hole 331. The first conductive hole 331 contains a conductive material. The first electrode structure 34 is provided on the insulating layer 33, and is electrically connected to the oscillation chip 32 through the conductive material in the first conductive hole 331. The first electrode structure 34 may be a pad structure such as a solder pad. The insulating layer 33 is a resin material. The first electrode structure 34 includes a plurality of first electrodes (i.e., a plurality of pads). The number of the first conductive holes 331 corresponds to the number of the first electrodes. This allows the first electrodes to be electrically connected to the conductive material in the corresponding first conductive hole 331. As shown in FIG. 3, in this embodiment, the number of first electrodes of the first electrode structure 34 is four, and they are provided at the four corners of the bottom of the oscillator 30, respectively.

[0027] In the oscillator 30 provided by the embodiment of the present application, the oscillation chip 32 is directly installed on one side of the hermetically sealed structure 312 of the already packaged oscillator 31, and furthermore, the oscillator 31 and the oscillation chip 32 are sealed via the insulating layer 33, and there is no need to install a carrier base and its cavity for packaging the oscillator 31 and the oscillation chip 32, and the problem that it is difficult to miniaturize the oscillator 30 due to the carrier base and its cavity can be avoided, and the packaging of a miniaturized oscillator can be realized. In addition, since the insulating layer 33 is covered by the oscillation chip 32, the oscillation chip 32 is not exposed, and the oscillation chip 32 can be better protected. In addition, the first electrode structure 34 is provided on the insulating layer 33, and can respond to stress generated from the client terminal side on which the oscillator 30 is placed on the circuit board, and has a role of buffering. This improves the reliability of the oscillator 30 and the circuit board having the oscillator 30.

[0028] Specifically, the hermetic sealing structure 312 includes a ceramic base 3121 having a cavity 3121a, a cover plate 3122 covered by the ceramic base 3121, and a second electrode structure 3123 provided on the ceramic base 3121. A conductor structure 3121b may be provided in the ceramic base 3121. The vibration element 311 may be provided in the cavity 3121a and electrically connected to the conductor structure 3121b via a conductive adhesive 3121c (e.g., a conductive adhesive). The second electrode structure 3123 is further electrically connected to the conductor structure 3121b and is also electrically connected to the oscillation chip 32 so that the oscillation chip 32 is electrically connected to the vibrator 31. The second electrode structure 3123 may be a welding pad structure and may include a plurality of second electrodes (i.e., a plurality of pads). The number of the conductor structures 3121b may correspond to the number of the second electrodes. This allows the second electrode to be electrically connected to the corresponding conductor structure 3121b. The vibration element 311 is made of a quartz crystal material.

[0029] Furthermore, in this embodiment, the insulating layer 33 further includes a second conductive hole 335. The second conductive hole 335 includes a conductive material. The second electrode structure 3123 is electrically connected to the oscillation chip 32 through the conductive material in the second conductive hole 335.

[0030] In this embodiment, the insulating layer 33 may be deposited on one side of the oscillation chip 32 and the hermetic sealing structure 312 by a first semiconductor deposition process. The first conductive hole 331 may be formed in the insulating layer 33 by a semiconductor etching process. A conductive material is formed in the first conductive hole 331 by a second semiconductor deposition process. The first electrode structure 34 is formed in the insulating layer 33 by a third semiconductor deposition process. The semiconductor etching process can realize the patterning of the material layer to be etched by sequentially depositing the material to be etched and a photosensitive etchant, and exposing them together with a patterned mask.

[0031] <Example 2> Fig. 6 is a cross-sectional view of an oscillator 40 provided by Example 2 of the present application. As shown in Fig. 6, the oscillator 40 in Example 2 is basically the same as the oscillator 30 in Example 1. That is, the above description of the oscillator 30 in Example 1 is basically applicable to the oscillator 40 in Example 2. The following mainly describes the differences between the oscillator 40 in Example 2 and the oscillator 30 in Example 1.

[0032] In the oscillator 40 of the second embodiment, the first seal member 4124, the second seal member 4125, and the vibration element 411 are all made of quartz crystal material. That is, the vibrator 41 is a fully quartz crystal packaged vibrator. The package structure 412 includes a first seal member 4124 provided on one side of the vibration element 411, a second seal member 4125 provided on the other side of the vibration element 411, and a second electrode structure 4123 provided on the first seal member 4124. Furthermore, the second electrode structure 4123 is electrically connected to the oscillation chip 42 via the conductive material in the second conductive hole 435.

[0033] Specifically, in this embodiment, the oscillation chip 42 is provided on the first sealing member 4124 and is electrically connected to the second electrode structure 4123. The insulating layer 33 covers the oscillation chip 42 and the first sealing member 4124. Basically the same as in the first embodiment, the oscillation chip 42 is directly installed on one side of the package structure 412 of the already packaged oscillator 41, and furthermore, the insulating layer 43 realizes the sealing protection of the oscillator 41 and the oscillation chip 42, and there is no need to install a carrier base and a cavity for packaging the oscillator 41 and the oscillation chip 42, and the problem that the size of the oscillator 40 is difficult to reduce due to the carrier base and the cavity can be avoided, and the packaging of the miniaturized oscillator can be realized. In addition, since the insulating layer 43 is covered on the oscillation chip 42, the oscillation chip 42 is not exposed, and the oscillation chip 42 can be better protected. In addition, the first electrode structure 44 is provided on the insulating layer 43, and can withstand stress generated from the client terminal side on which the oscillator 40 is arranged on the circuit board, and has a buffering role, thereby improving the reliability of the oscillator 40 and the circuit board having the oscillator 40.

[0034] <Example 3> Fig. 7 is a cross-sectional view of an oscillator 50 provided by Example 3 of the present application. As shown in Fig. 7, the oscillator 50 in Example 3 is basically the same as the oscillator 30 in Example 1. That is, the above description of the oscillator 30 in Example 1 can also be basically applied to the oscillator 50 in Example 3. The following mainly describes the differences between the oscillator 50 in Example 3 and the oscillator 30 in Example 1.

[0035] In the oscillator 50 of the third embodiment, the vibrator 51 is a silicon-based vibrator sealed entirely with silicon. The position of the insulating layer 53 is different from that of the first and second embodiments. Specifically, in the vibrator 51, the airtight sealing structure 512 includes a first seal member 5124 provided on one side of the vibrating element 511, a second seal member 5125 provided on the other side of the vibrating element 511, and a second electrode structure 5123 provided on the first seal member 5124. The first seal member 5124, the vibrating element 511, and the second seal member 5125 all include silicon material. The second electrode structure 5123 is electrically connected to the oscillation chip 52. The second electrode structure 5123 is further electrically connected to the oscillation chip 52 via the conductive material in the second conductive hole 535.

[0036] The vibrator 51 is provided on a first surface of the oscillation chip 52. The insulating layer 53 covers the vibrator 51, the first surface 521 of the oscillation chip 52, the second surface 522 facing the opposite side to the first surface 521 of the oscillation chip 52, and the side surface 523 connected between the first surface 521 and the second surface 522. Specifically, the insulating layer 53 has a base portion 530 and a covering portion 532. The first surface of the oscillation chip 52 is disposed on the base portion 530. The covering portion 532 is provided on the second surface 522 facing the opposite side to the first surface 521 of the oscillation chip 52, the side surface 523 connected between the first surface 521 and the second surface 522, and the vibrator 11. Here, the base portion 530 and the covering portion 532 may be formed sequentially by different semiconductor deposition processes.

[0037] In the oscillator 50 of the third embodiment, the insulating layer 53 covers and protects both the resonator 51 and the oscillation chip 52, which not only avoids the problem of the carrier substrate and its cavity making it difficult to reduce the size of the oscillator 50, but also responds to the stress generated in the client terminal in which the oscillator 50 is placed on the circuit board, and plays a buffering role. This further improves the reliability of the oscillator 50 and the circuit board having the oscillator 50. In addition, the resonator 51 is a silicon-based resonator that is fully sealed with silicon, and its size is smaller, so that the size of the finally obtained oscillator 50 is also smaller. In addition, the structural position design of the insulating layer 53 also improves the airtightness of the oscillator 50.

[0038] <Example 4> 3 to 8, Fig. 8 is a flowchart of a method for manufacturing an oscillator provided by the fourth embodiment of the present invention. This manufacturing method includes the following steps S81 to S84.

[0039] In step S81, an oscillator chip is provided. As shown in Fig. 3 to Fig. 7, the oscillator chip may be the oscillator chip 32, 42, or 52 according to any one of the first to third embodiments.

[0040] In step S82, a resonator including a resonator element and an airtight sealing structure sealed around the resonator element is provided, and the resonator is installed on one side of an oscillation chip. Specifically, as shown in Figs. 3 to 7, the resonator is a ceramic packaged crystal resonator, an all-crystal packaged crystal resonator, or an all-silicon sealed silicon-based resonator. That is, the resonator may be the resonator 31, 41, or 51 according to any one of the embodiments 1 to 3, and will not be described further here.

[0041] In step S83, an insulating layer having a first conductive hole is formed on at least one side of the oscillation chip and the hermetic sealing structure, and a conductive material is formed in the first conductive hole. Note that the structure of the insulating layer 33 and the first conductive hole 331, and the conductive material of the first conductive hole 331 have been described in detail in the first embodiment, so description thereof will be omitted here.

[0042] In step S84, a first electrode structure is formed on the insulating layer, and the first electrode structure is electrically connected to the oscillator chip through the conductive material in the first conductive hole. Note that the first electrode structure 34 has already been described in detail in the first embodiment, and will not be described here.

[0043] 7 and 8, when the vibrator 51 is a silicon-based vibrator sealed with silicon, the method for manufacturing the oscillator further includes step S80 of preparing a substrate before step S81. Step S83 may further include steps S831 and S832. The substrate may be selected according to actual needs. For example, the substrate may include, but is not limited to, a ceramic substrate, a silicon substrate, etc.

[0044] In step S831, a base portion 530 is formed on a substrate, and a first surface 521 of the oscillator chip 52 is disposed on the base portion 530. In step S832, a covering portion 532 is formed on a second surface 522 facing the opposite side to the first surface 521 of the oscillator chip 52, a side surface 523 connected between the first surface 521 and the second surface 522, and the vibrator 51, and a first conductive hole 531, a conductive material in the first conductive hole 531, a second conductive hole 535, and a conductive material in the second conductive hole 535 are formed in the covering portion 532.

[0045] The base portion 530, the covering portion 532, the conductive material in the first conductive hole 531, and the conductive material in the second conductive hole 535 can all be formed by a semiconductor deposition process. The first conductive hole 531 and the second conductive hole 535 can all be formed by a semiconductor etching process.

[0046] The method for manufacturing an oscillator further includes a substrate removal step S85 after step S84.

[0047] <Example 5> FIG. 9 is a block schematic diagram of an electronic device 90 provided by Example 5 of the present application. As shown in FIG. 9, the embodiment of the present application further provides an electronic device 90. The electronic device 90 may be a portable electronic device such as, but not limited to, a mobile phone, a tablet, a display, a laptop, a digital camera, etc. The electronic device 90 may include a circuit board 91 provided with the oscillator 30, 40 or 50 described in any of the above-mentioned examples. [Explanation of symbols]

[0048] 10, 20 Oscillator 11, 21 Transducer 12, 22 Oscillator chip 13, 23 Ceramic substrate 14, 24 Electrode structure 15 Conductive Silver Paste 30 Oscillators 31 Transducer 32 Oscillator Chip 33 Insulating layer 34 First electrode structure 40, 50 Oscillator 41, 51 Transducer 42, 52 Oscillator chip 43 Insulating layer 44 First electrode structure 90 Electronic equipment 311 Vibration element 312 Hermetically sealed structure 3121 Ceramic substrate 3122 Cover plate 3121a Cavity 3121b Conductor structure 3121c Conductive Adhesive 3123 Second electrode structure 331 First Through Hole 335 Second Through Hole 411 Vibration element 412 Package Structure 4124 First seal member 4123 Second electrode structure 4125 Second seal member 435 Second Through Hole 511 Vibration element 512 Hermetically sealed structure 521 1st surface 522 2nd surface 523 Side 530 Base 531 First Through Hole 532 Covering part 535 Second Through Hole 5123 Second electrode structure 5124 First sealing member 5125 Second seal member

Claims

1. 1. An oscillator comprising: A vibrator including a vibration element and a hermetically sealed structure enclosed around the outer periphery of the vibration element; an oscillation chip disposed on one side of the hermetically sealed structure; an insulating layer covering at least one side of the oscillation chip and the hermetic sealing structure and having a first conductive hole in which a conductive material is formed; a first electrode structure provided on the insulating layer and electrically connected to the oscillation chip via the conductive material in the first conductive hole.

2. the resonator is a quartz crystal resonator in a ceramic package, the hermetically sealed structure includes a ceramic substrate having a cavity, a cover plate covering the ceramic substrate, and a second electrode structure provided on the ceramic substrate; The ceramic base is provided with a conductor structure, and the vibration element is provided in the cavity and connected to the ceramic base via an adhesive; The oscillator according to claim 1 , wherein the second electrode structure is further electrically connected to the conductor structure and the oscillation chip.

3. the resonator is a full crystal package crystal resonator; the hermetic sealing structure includes a first seal member provided on one side of the vibration element, a second seal member provided on the other side of the vibration element, and a second electrode structure provided on the first seal member; the first seal member, the vibration element, and the second seal member each contain a quartz crystal material; the second electrode structure is electrically connected to the oscillation chip, the oscillation chip is provided on the first sealing member and is electrically connected to the second electrode structure, 2. The oscillator according to claim 1, wherein the insulating layer covers the oscillation chip and the first sealing member.

4. The vibrator is a silicon-based vibrator that is fully sealed in silicon, the hermetic sealing structure includes a first seal member provided on one side of the vibration element, a second seal member provided on the other side of the vibration element, and a second electrode structure provided on the first seal member; the first seal member, the vibration element, and the second seal member all contain a silicon material; the second electrode structure is electrically connected to the oscillation chip, and the vibrator is provided on a first surface of the oscillation chip; The oscillator of claim 3 , wherein the insulating layer covers the vibrator, a first surface of the oscillator chip, a second surface of the oscillator chip facing opposite to the first surface, and a side surface connected between the first surface and the second surface.

5. 5. The oscillator according to claim 2, 3 or 4, characterized in that the insulating layer further has a second conductive hole, a conductive material is formed in the second conductive hole, and the second electrode structure is electrically connected to the oscillation chip via the conductive material in the second conductive hole.

6. 2. The oscillator of claim 1, wherein the insulating layer is provided on at least one side of the oscillation chip and the hermetic sealing structure by a first semiconductor deposition process, the first conductive hole is formed in the insulating layer by a semiconductor etching process, the conductive material in the first conductive hole is formed in the first conductive hole by a second semiconductor deposition process, and the first electrode structure is formed in the insulating layer by a third semiconductor deposition process.

7. A method for manufacturing an oscillator, comprising the steps of: providing an oscillation chip; preparing a vibrator including a vibration element and a hermetically sealed structure enclosed around the outer periphery of the vibration element, and disposing the vibrator on one side of the oscillation chip; forming an insulating layer having a first conductive hole provided with a conductive material on at least one side of the oscillation chip and the hermetic sealing structure; forming a first electrode structure on the insulating layer, and allowing the first electrode structure to be electrically connected to the oscillation chip through the conductive material in the first conductive hole; A method for manufacturing an oscillator comprising the steps of:

8. The resonator is a ceramic packaged crystal resonator, an all-crystal packaged crystal resonator, or an all-silicon sealed silicon-based resonator; The insulating layer is deposited on at least one side of the oscillation chip and the hermetic sealing structure by a first semiconductor deposition process, and the first conductive hole is formed in the insulating layer by a semiconductor etching process; 8. The method of claim 7, wherein the conductive material in the first conductive hole is formed in the first conductive hole by a second semiconductor deposition process, and the first electrode structure is formed in the insulating layer by a third semiconductor deposition process.

9. The method for manufacturing the oscillator includes the steps of: providing a substrate; the insulating layer includes a base portion and a covering portion; The step of forming an insulating layer having a first conductive hole on at least one side of the oscillation chip and the hermetic sealing structure further includes: forming the base portion on the substrate, providing a first surface of the oscillation chip on the base portion; forming the covering portion on a second surface of the oscillation chip facing the opposite side to the first surface, a side surface connected between the first surface and the second surface, and the vibrator; and forming the first conductive hole and a conductive material in the first conductive hole on the covering portion, 8. The method for manufacturing an oscillator according to claim 7, wherein the base portion and the covering portion are both formed by a semiconductor deposition process, and the method for manufacturing an oscillator further includes a step of removing the substrate.

10. 8. An electronic device comprising a circuit board on which the oscillator according to claim 1 is provided.

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