Etcher ring and method for manufacturing the same

Abstract

To suppress exposure of a second layer in an etcher having a first layer and the second layer.SOLUTION: An etcher ring (1) holds a wafer to be etched, includes a first region (111) and a second region (112) adjacent to the outer periphery of the first region (111), and is provided with a first layer (11) above the first region (111) for holding an edge of the wafer, and a second layer (12) laminated below the first layer (11). The first layer (11) is formed such that the layer thickness in the second region (112) is such that the second layer is not exposed due to wear during etching.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present disclosure relates to an etcher and a method for manufacturing an etcher. [Background technology]

[0002] A plasma etching apparatus for etching a semiconductor wafer is provided with an etcher ring for holding the wafer to be etched (Patent Document 1). Such an etcher ring is formed, for example, from CVD-SiC (Silicon Carbide) formed by CVD (Chemical Vapor Deposition).

[0003] The etcher may have a structure in which two or more layers of SiC are stacked to obtain a predetermined thickness. When etching is performed, the area adjacent to the outer periphery of the area where the edge of the wafer is held in the etcher is most damaged by the plasma because the plasma density in such an area is the highest.

[0004] In an etcher ring having a structure in which multiple layers of SiC are stacked, when the first layer of the multiple layers of SiC is worn away and the second layer is exposed, some kind of defect may occur, such as impurities being released from the interface between the first layer and the second layer. The reason for this is that when an etcher ring is made up of multiple layers, for example, the period between the timing of forming the first layer and the timing of forming the second layer may be long, which may easily cause impurities to be mixed into the interface. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2020-1947 A Summary of the Invention [Problem to be solved by the invention]

[0006] In a conventional etcher ring such as that in Patent Document 1, after forming a ring-shaped member made of multiple layers of SiC, a process is performed to reduce the thickness of the inner circumference side of the first layer in order to form a region for holding the edge of the wafer. As a result, in the region of the first layer adjacent to the outer circumference side of the region for holding the edge of the wafer, the thickness of the first layer is thinner than other regions, so that the second layer is easily exposed due to wear of the first layer during etching.

[0007] However, conventional etchering had a problem in that no technology was considered to prevent the first layer of multi-layered SiC from being worn away, exposing the second layer.

[0008] The present disclosure has been made to solve the above-mentioned problems, and its purpose is to make it possible to suppress exposure of the second layer in an etcher having a first layer and a second layer. [Means for solving the problem]

[0009] An etcher ring according to one aspect of the present disclosure is an etcher ring that holds a wafer to be etched, and includes a first region and a second region adjacent to the outer periphery of the first region, and is equipped with a first layer above the first region that holds an edge of the wafer, and a second layer stacked below the first layer, and the first layer is formed such that the thickness of the layer in the second region is such that the second layer is not exposed due to wear during etching.

[0010] A method for manufacturing an etcher ring according to another aspect of the present disclosure is a method for manufacturing an etcher ring for holding a wafer to be etched, comprising the steps of stacking a first layer and a second layer around a ring-shaped base material, processing both end faces in the stacking direction of the first layer and the second layer into flat surfaces, exposing the inner and outer peripheries of the base material, removing the base material, and processing the surface of the first layer on the side where the edge of the wafer is held. The first and second layers are stacked by forming one layer around the base material and then forming the other layer around the other layer, and the first layer is processed to include a first region where the edge of the wafer is held and a second region adjacent to the outer periphery of the first region, and the layer thickness in the second region is processed to a thickness that does not expose the second layer due to wear during etching. Effect of the Invention

[0011] According to an etcher according to one aspect of the present disclosure, the first layer is formed such that the thickness of the layer in the second region is such that the second layer is not exposed due to wear during etching, and therefore, for an etcher comprising a first layer and a second layer, exposure of the second layer can be suppressed.

[0012] In a method for manufacturing an etcher ring according to another aspect of the present disclosure, the first layer is processed to include a first region that holds the edge of the wafer and a second region that is adjacent to the outer periphery of the first region, and the layer thickness in the second region is processed to a thickness that prevents the second layer from being exposed due to wear during etching, thereby preventing exposure of the second layer in an etcher ring comprising the first and second layers. [Brief description of the drawings]

[0013] [Figure 1] 1 is a cross-sectional view of an etcher ring 1 in the first embodiment. [Diagram 2] 1 is a cross-sectional view of a portion of an etcher ring 1 in accordance with the first embodiment. [Diagram 3]2 is a cross-sectional view illustrating the wear of a first layer 11 during etching of an etcher ring 1 in the first embodiment. FIG. [Figure 4] 1 is a schematic diagram of a CVD film formation apparatus 4 of an etcher ring 1 in the first embodiment. [Diagram 5] 2 is a cross-sectional view of a substrate 5 used in manufacturing an etcher ring 1 in the first embodiment. [Figure 6] 1 is a cross-sectional view of a laminate 6 in which a first layer 11 and a second layer 12 are laminated around a base material 5 in the first embodiment. [Figure 7] 2 is a cross-sectional view of a laminate 6 showing a portion of an etcher ring 1 obtained by processing the laminate 6 of the first embodiment by a processing device. FIG. [Figure 8] 2 is a flowchart showing a manufacturing process of the etcher ring 1 according to the first embodiment. [Figure 9] 11 is a cross-sectional view of a base material 5a used in manufacturing an etcher ring 1 in embodiment 2. FIG. [Figure 10] 1 is a cross-sectional view of a laminate 6a in which a first layer 11 and a second layer 12 are laminated around a base material 5a in the first embodiment. [Figure 11] 11 is a cross-sectional view of a laminate 6a showing a portion of an etcher ring 1 obtained by processing the laminate 6a of the second embodiment by a processing device. FIG. [Figure 12] 10 is a flowchart showing a manufacturing process of the etcher ring 1 according to the second embodiment. [Figure 13] FIG. 11 is a cross-sectional view of an entire etcher ring 1a in embodiment 3. [Figure 14] 11 is a cross-sectional view of a part of the etcher ring 1a according to the first embodiment of the etcher ring 1a according to the third embodiment. FIG. [Figure 15] 11 is a cross-sectional view illustrating the wear of a first layer 11 during etching of an etcher ring 1a in the third embodiment. FIG. [Figure 16] 11 is a cross-sectional view of a laminate 6 showing a portion of an etcher ring 1a obtained by processing the laminate 6 of the third embodiment by a processing device. FIG. [Figure 17] 11 is a flowchart showing a manufacturing process of the etcher ring 1a according to the third embodiment. [Figure 18] 11 is a cross-sectional view of a laminate 6 showing a portion of an etcher ring 1a obtained by processing the laminate 6 of the third embodiment by a processing device. FIG. [Figure 19] 10 is a flowchart showing a manufacturing process of the etcher ring 1a according to the fourth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014] Hereinafter, the embodiments of the present disclosure will be described in detail with reference to the drawings. Although several embodiments will be described below, it is planned from the beginning of the application that the configurations described in each embodiment will be appropriately combined. Note that the same or corresponding parts in the drawings are given the same reference numerals, and the description thereof will not be repeated.

[0015] [Embodiment 1] (Overall configuration of Etcher Ring 1) Fig. 1 is a cross-sectional view of an entire etcher ring 1 in embodiment 1. In Fig. 1, a cross section taken along the center line of the ring-shaped etcher ring 1 is shown.

[0016] The etcher ring 1 is provided inside a plasma etching device (not shown). The etcher ring 1 is an annular member in which a first layer 11 and a second layer 12 are laminated. The first layer 11 is made of SiC (Silicon Carbide). The second layer 12 is made of SiC. In the etcher ring 1, the second layer 12 is laminated below the first layer 11. Since the etcher ring 1 is annular, a circular space 13 is formed on the inner peripheral side.

[0017] In the etcher ring 1, a holder 14 for holding a wafer 2 to be etched is provided on the inner peripheral portion of the upper surface of the first layer 11. The wafer 2 is disk-shaped. The holder 14 is a portion having a step formed therein such that the thickness is reduced by one step compared to other portions of the etcher ring 1.

[0018] The wafer 2 is fixed by a chuck device provided in the plasma etching device. This allows the edge of the wafer 2 to be held within the space of the holder 14 of the etcher ring 1. In this example, the edge of the wafer 2 is held within the space of the holder 14 in a state of not contacting the etcher ring 1. Note that the wafer 2 may be placed on the holder 14 with the edge in contact with the holder 14 of the etcher ring 1.

[0019] (Detailed configuration of Etcher Ring 1) Fig. 2 is a cross-sectional view of a part of the etcher ring 1 in the embodiment 1. In Fig. 2, the cross section shown on the right side of the etcher ring 1 in Fig. 1 is enlarged.

[0020] The first layer 11 of the etcher ring 1 includes a first region 111, a second region 112, a third region 113, and a fourth region 114. The upper surface of the first region 111, the upper surface of the second region 112, and the side surface of the third region 113 form a holding portion 14.

[0021] The first region 111 is a region that includes the end portion on the inner periphery side of the etcher ring 1. The second region 112 is a region that is adjacent to the outer periphery side of the first region 111. The third region 113 is a region that is adjacent to the outer periphery side of the second region 112. The fourth region 114 is a region that is adjacent to the outer periphery side of the third region 113. The fourth region 114 includes the end portion on the inner periphery side of the etcher ring 1.

[0022] The first region 111 is a region above which the edge of the wafer 2 is held. The second region 112 is a region above which the edge of the wafer 2 is not held. The third region 113 is a region having a shape that protrudes upward from the first region 111 and the second region 112 so as to face the edge of the wafer 2 when the edge of the wafer 2 is placed above the first region 111. Due to this shape, the third region 113 surrounds the entire edge of the wafer 2 from the outer periphery when the edge of the wafer 2 is placed above the first region 111.

[0023] The upper surface of the first region 111 and the upper surface of the second region 112 are at the same height. The upper surface of the first region 111 and the upper surface of the second region 112 are at a position one step lower than the upper surface of the fourth region 114. The side surface of the third region 113 is a region that connects the upper surface of the second region 112 and the upper surface of the fourth region 114. The side surface of the third region 113 is inclined between the upper surface of the second region 112 and the upper surface of the fourth region 114. Note that the side surface of the third region 113 is not limited to being inclined as shown in FIG. 2, and may not be inclined.

[0024] In the first layer 11, a surface formed by an upper surface portion of the first region 111, an upper surface portion of the second region 112, a side portion of the third region 113, and an upper surface portion of the fourth region 114 is called a first surface 91. In the first layer 11, a surface opposite to the first surface 91 is called a second surface 92.

[0025] The second layer 12 is formed below the second surface 92. The second layer 12 includes a first region 121, a second region 122, and a third region 123. The first region 121 of the second layer 12 is a region corresponding to the first region 111 and the second region 112 of the first layer 11. The second region 122 of the second layer 12 is a region corresponding to the third region 113 of the first layer 11. The third region 123 of the second layer 12 is a region corresponding to the fourth region 114 of the first layer 11.

[0026] In the second layer 12, a first region 121 of the second layer 12 is present at a position facing the first region 111 and the second region 112 of the first layer 11. In the second layer 12, a second region 122 of the second layer 12 is present at a position facing the third region 113 of the first layer 11. In the second layer 12, a third region 123 of the second layer 12 is present at a position facing the fourth region 114 of the first layer 11.

[0027] In the second layer 12, a surface formed by an upper surface portion of the first region 121, a side surface portion of the second region 122, and an upper surface portion of the third region 123 is called a third surface 93. In the second layer 12, a surface opposite to the third surface 93 is called a fourth surface 94.

[0028] The first layer 11 is formed such that the layer thickness in the second region 112 is greater than the layer thickness in the first region 121 of the second layer 12. The reason for this configuration is to prevent the second layer 12 from being exposed due to wear of the first layer 11 during etching.

[0029] In this manner, in the etcher ring 1, the thickness of the first layer 11 in the second region 112 is formed to be greater than the thickness of the layer in the first region 121 of the second layer 12. As a result, in the etcher ring 1, the interface 15 between the first layer 11 and the second layer 12 is located at a position from the bottom surface of the second layer 12 in the first region 121 of the second layer 12 lower than the position of the second region 122 of the second layer 12 and the position of the third region 123 of the second layer 12, as shown in FIG.

[0030] (A configuration that prevents exposure of the second layer 12 due to wear of the first layer 11 during etching) FIG. 3 is a cross-sectional view illustrating the wear of the first layer 11 during etching of the etcher ring 1 in the first embodiment.

[0031] When plasma etching is performed in an etching apparatus, the second region 112 of the first layer 11 is most damaged by plasma in the etcher ring 1. This is because the second region 112 of the first layer 11 is adjacent to the outer periphery of the first region 111 above which the edge of the wafer 2 is located, and thus has the highest plasma density.

[0032] When the wafer 2 is plasma etched, as shown in Fig. 3, the first layer 11 is worn away in the second region 112, forming holes 3 and reducing the thickness of the second region 112. To prevent the second layer 12 from being exposed due to such wear caused by etching, the first layer 11 is formed to have a thickness in the second region 112 that does not expose the second layer 12 due to wear caused by etching. Specifically, the thickness of the first layer 11 in the second region 112 is set to be as large as possible of the total thickness of the first layer 11 and the second layer 12 below the holding portion 14 of the etcher ring 1.

[0033] In this way, in the etcher ring 1 of embodiment 1, the thickness of the first layer 11 in the second region 112 is formed to be a thickness that prevents the second layer 12 from being exposed due to wear during etching, thereby preventing the second layer 12 from being exposed during etching in the etcher ring 1 having the first layer 11 and the second layer 12.

[0034] (Etcher Ring 1 manufacturing equipment) FIG. 4 is a schematic diagram of a CVD film forming apparatus 4 included in the manufacturing apparatus for the etcher ring 1 in the first embodiment.

[0035] The CVD film forming apparatus 4 includes a chamber 41 , a high-frequency power supply 42 , a vacuum pump 43 , a source gas container 44 , a first valve 451 , a second valve 452 , and a control device 49 .

[0036] The control device 49 includes a CPU (Central Processing Unit) 491, memory (ROM (Read Only Memory) and RAM (Random Access Memory)) 492, an input / output buffer (not shown), etc. The CPU 491 loads a program stored in the ROM into the RAM, etc., and executes it. The program stored in the ROM is a program in which the control processing procedures executed by the control device 49 are written. The control device 49 controls various devices in the CVD film forming apparatus 4 in accordance with such programs.

[0037] The control device 49 controls various devices within the chamber 41, such as the high frequency power supply 42, the vacuum pump 43, the first valve 451, and the second valve 452.

[0038] A film formation table 46, a heater 47, and a shower head 48 are provided inside the chamber 41. The heater 47 is provided inside the shower head 48. A substrate 5 of the etcher ring 1 on which a film is to be formed is held above the film formation table 46. The substrate 5 is made of, for example, graphite. The substrate 5 is held so that a film is formed all around it. The substrate 5 may be made of a material other than graphite.

[0039] The first valve 451 is provided in a gas path between the vacuum pump 43 and the chamber 41. The second valve 452 is provided in a gas path between the source gas container 44 and the chamber 41.

[0040] When forming a film on the substrate 5 in the CVD film forming apparatus 4, the control device 49 performs control to close the second valve 452, open the first valve 451, and operate the vacuum pump 43. This puts the inside of the chamber 41 into a vacuum state.

[0041] Thereafter, the controller 49 controls the second valve 452 to be opened while the first valve 451 is closed to maintain the inside of the chamber 41 in a vacuum state. As a result, the raw material gas is supplied from the raw material gas container 44 into the chamber 41. When the raw material gas is supplied into the chamber 41, the controller 49 controls the high frequency power supply 42 to supply high frequency power to the electrode of the shower head 48. As a result, the raw material gas is turned into plasma in the chamber 41 and released from the shower head 48.

[0042] When a film is formed on the substrate 5 in the CVD film forming apparatus 4, the control device 49 supplies power to the heater 47 and controls the heater 47 to heat it. As a result, a film of a substance contained in the source gas is formed on the film forming target, such as the substrate 5, while the film forming target is heated.

[0043] In such a CVD film-forming apparatus 4, a film of SiC is formed around the substrate 5, thereby forming a film for producing the etcher ring 1 as shown in FIGS.

[0044] The manufacturing equipment for the etcher ring 1 includes a processing equipment (not shown) for processing the etcher ring 1, such as cutting, in addition to the CVD film forming equipment 4.

[0045] (Method of manufacturing etcher ring 1) 5 to 7, which will be described below, show an example of simultaneously manufacturing two etcher rings 1. In Fig. 5 to Fig. 7, in order to clarify the manufacturing range of one etcher ring 1, the boundary between the manufacturing ranges of the two etcher rings 1 is shown by a dashed line 70.

[0046] 5 is a cross-sectional view of a substrate 5 used in manufacturing the etcher ring 1 in the embodiment 1. The substrate 5 is a ring-shaped member in which a first region 51 on the outer periphery side is thinner than a second region 52 on the inner periphery side. Since the substrate 5 is ring-shaped, a circular space 53 is formed on the inner periphery side.

[0047] The first region 51 and the second region 52 of the base material 5 are formed in a shape determined so that the interface between the first layer and the second layer to be laminated has a cross-sectional shape similar to that of interface 15 shown in FIG. 2 and other figures.

[0048] FIG. 6 is a cross-sectional view of a laminate 6 in which a first layer 61 and a second layer 62 are laminated around a base material 5 in the first embodiment.

[0049] 6, a first layer 61 is formed around a substrate 5 in a CVD film forming apparatus 4. The first layer 61 is a layer that becomes the first layer 11 of the etcher ring 1. The first layer 61 is a layer of SiC.

[0050] Thereafter, in the CVD film forming apparatus 4, a second layer 62 is formed around the first layer 61. The second layer 62 is a layer that becomes the second layer 12 of the etcher ring 1. The second layer 62 is a SiC layer. Since the base material 5 of the laminate 6 is ring-shaped, a circular space 63 is formed on the inner periphery side after the first layer 61 and the second layer 62 are laminated.

[0051] The laminate 6 after the first layer 61 is formed is generally stored outside the chamber 41 in Fig. 4 for a predetermined period of time. Thereafter, the laminate 6 with the first layer 61 formed is placed inside the chamber 41 again. Then, in such a laminate 6, the second layer 62 is formed around the first layer 61. Note that the laminate 6 with the first layer 61 formed may be stored inside the chamber 41.

[0052] 6, the base material 5 has a shape in which the first region 51 on the outer periphery side is thinner than the second region 52 on the inner periphery side. Accordingly, the first layer 61 of the laminate 6 has a shape in which the thickness of the outer periphery side region is thinner than the thickness of the inner periphery side region, similar to the shape of the base material 5. Accordingly, the second layer 62 has a shape in which the thickness of the outer periphery side region is thinner than the thickness of the inner periphery side region, similar to the shape of the base material 5.

[0053] After the laminate 6 shown in FIG. 6 is formed in the CVD film forming apparatus 4, the laminate 6 can be processed in a processing apparatus to obtain the etcher ring 1 having the shape shown in FIGS.

[0054] 7 is a cross-sectional view of the laminate 6 showing a portion of the etcher ring 1 obtained by processing the laminate 6 of the embodiment 1 by a processing device. As shown in FIG. 7, two etcher rings 1 can be obtained from the laminate 6.

[0055] In the following, the processing portion for obtaining the etcher ring 1 will be described using the etcher ring 1 shown at the bottom of Fig. 7 as a representative example among the regions for obtaining the two etcher rings 1 shown in Fig. 7. In the processing device, the laminate 6 is processed as follows to obtain the etcher ring 1 having the structure shown in Fig. 2.

[0056] When obtaining the etcher ring 1 shown in the lower part of the drawing from the laminate 6, first, in a processing device, a process is performed in which the lower surface side of the laminate 6 is cut and planarized, for example, to a position shown by the dashed line 71, and then the upper surface side of the laminate 6 is cut and planarized, for example, to a position shown by the dashed line 72. As a result, both end surfaces of the laminate 6 in the stacking direction are planarized.

[0057] Next, in the processing device, the outer periphery of the laminate 6 is cut, for example, to a position such as dashed line 73, to expose the first region 51 of the substrate 5, and the inner periphery of the laminate 6 is cut, for example, to a position such as dashed line 74, to expose the second region 52 of the substrate 5.

[0058] In processing to expose the first region 51 of the base material 5, the position of the center of the circle of the base material 5 is used as a reference position, and the outer periphery side of the laminate 6 is cut to a position that is the same as the position of the predetermined outer periphery dimension of the etcher ring 1 as indicated by the dashed line 73. In processing to expose the second region 52 of the base material 5, the position of the center of the circle of the ring-shaped base material 5 is used as a reference position, and the inner periphery side of the laminate 6 is cut to a position that is the same as the position of the predetermined inner periphery dimension of the etcher ring 1 as indicated by the dashed line 74.

[0059] In the process of exposing the first region 51 of the substrate 5, it is sufficient to cut the laminate 6 until at least the end portion on the outer periphery side and the end portion on the inner periphery side of the substrate 5 are exposed, and cutting to the position indicated by the dashed line 73 in FIG. 7 and cutting to the position indicated by the dashed line 74 in FIG. 7 may be performed after removing the substrate 5.

[0060] Next, a process is performed to remove the base material 5 by chemical processing, which separates the laminate 6 into a first member for producing the etcher ring 1 shown above the dashed line 70 in Fig. 7 and a second member for producing the etcher ring 1 shown below the dashed line 70 in Fig. 7.

[0061] In the following, a processing method for producing the etcher ring 1 will be described with reference to the members for producing the etcher ring 1 shown in the lower part of FIG.

[0062] 7 is held in a processing section of a processing device with the side of the second layer 62, which has been planarized as described above, facing downward. Then, in the processing device, a process is performed to cut the upper surface side of the etcher ring 1 so that the thickness distribution of the first layer 11 in the radial direction of the etcher ring 1 becomes the thickness distribution shown in FIG.

[0063] Specifically, the upper surface side of the second member is cut using the position of the lower end of the base material 5 as a reference position so that the interface 15 between the first layer 11 and the second layer 12 in the etcher ring 1 has a cross-sectional shape as shown in Fig. 2. For example, the second member is cut to a position as shown by the dashed line 75 in Fig. 7, or to a position as shown by the dashed line 76 in Fig. 7. In this case, each position to cut the upper surface side of the second member is estimated in advance based on the elapsed time from the start to the end of deposition of the first layer 11 and the second layer 12, and the deposition speeds of the first layer 11 and the second layer 12.

[0064] In addition, the third region 113 of the first layer 11 in the etcher ring 1 shown in Figure 7 is formed by cutting the second member from the center position of the circle of the base material 5 as the reference position to a predetermined position.

[0065] In addition, in the processing device, the lower surface side of the second member is cut using the position of the lower end of the base material 5 as a reference position so that the lower surface side of the second member has a cross-sectional shape as shown in Fig. 2. For example, as shown by the dashed line 77 in Fig. 7, the second member is cut to a position below the entire first region 111, the second region 112, and the third region 113 of the first layer 11 shown in Fig. 2 and a part of the fourth region 114a, so that the thickness of the second layer 62 becomes the thickness shown in Fig. 2. In this case, the position where the lower surface side of the second member is cut is estimated in advance based on the elapsed time from the start of deposition of the first layer 11 and the second layer 12 to the end of deposition, and the deposition speed of the first layer 11 and the second layer 12.

[0066] As a result, a second layer 12 having a thickness as shown in FIG. 2 is present below the entire first region 111, the second region 112, and the third region 113 of the first layer 11 in the etcher 1, and below part of the fourth region 114a.

[0067] The first member can be processed in the same manner as the second member described above to obtain an etcher ring 1 having a structure as shown in FIG.

[0068] In embodiment 1, as described above, a stack 6 as shown in FIG. 6 is formed in a CVD film forming apparatus 4, and then the stack 6 is processed in a processing apparatus as shown in FIG. 7, whereby an etcher ring 1 having a structure as shown in FIGS. 1 to 3 can be obtained from the stack 6.

[0069] (Etcher ring 1 manufacturing process) Fig. 8 is a flowchart showing the manufacturing process of the etcher ring 1 according to the embodiment 1. The flow of the manufacturing process for realizing the manufacturing method of the etcher ring 1 described above with reference to Figs. 5 to 7 will be collectively described with reference to Fig. 8.

[0070] The manufacturing process shown in FIG. 8 will be explained mainly to summarize the manufacturing method of the etcher ring 1 described above and to clarify the flow of the manufacturing process.

[0071] In the process of step S1, a first layer 61 of SiC is formed around the substrate 5 in the CVD film formation apparatus 4. Specifically, in the process of step S1, as described above, the first layer 61 is formed around the substrate 5 so as to have the cross-sectional shape shown in FIG.

[0072] In the process of step S2, in the CVD film formation apparatus 4, a second layer 62 made of SiC is formed around the first layer 61. Specifically, in the process of step S2, as described above, a second layer 12 is formed around the first layer 61 so as to have the cross-sectional shape shown in Fig. 6. By performing the processes of steps S1 and S2, a stacked body 6 as shown in Fig. 6 is formed.

[0073] In the process of step S3, the processing device processes the upper surface side of the laminate 6 into a flat surface, and also processes the lower surface side of the laminate 6 into a flat surface. In the process of step S3, as described above, the upper surface side and the lower surface side of the laminate 6 are processed into a flat surface.

[0074] In the process of step S4, the inner peripheral side and the outer peripheral side of the base material 5 are exposed in the processing device. Specifically, in the process of step S4, as described above, the inner peripheral side of the laminate 6 is cut to a predetermined first position with the position of the center of the circle of the base material 5 as the reference position. Furthermore, in the process of step S4, as described above, the outer peripheral side of the laminate 6 is cut to a predetermined second position with the position of the center of the circle of the base material 5 as the reference position, thereby exposing the outer peripheral side of the base material 5.

[0075] In the process of step S5, the base material 5 is removed in the processing device. Specifically, in the process of step S5, the base material 5 exposed in step S4 is removed by chemical treatment. As a result, the first member and the second member as described above are obtained.

[0076] In step S6, the processing device performs cutting processing on the portion of the first or second member that will become the upper surface of the etcher ring 1 to form the first layer 11 and the second layer 12 such that the thickness of the first layer 11 in the second region 112 shown in Figure 2 is such that the second layer 12 shown in Figure 2 will not be exposed due to wear during etching.

[0077] Specifically, in the process of step S6, as described above, the position of the lower end of the substrate 5 is set as the reference position, and the surface on the side of the first layer 11 is processed by, for example, cutting a portion that will become the upper surface of the etcher ring 1 over a predetermined thickness.

[0078] In step S6, the processing device cuts the first or second member with the position of the lower end of the base material 5 as a reference position so that the portion of the first or second member that will become the lower surface of the etcher ring 1 has a cross-sectional shape as shown in Fig. 2. As a result, in step S6, the second layer 12 is processed so that the second layer 12 is present below the second region 112 in the first layer 11.

[0079] By carrying out the manufacturing process as described above, an etcher ring 1 having the structure shown in FIGS. 1 and 2 can be obtained.

[0080] In the first embodiment, the etcher ring 1 is exemplified as an example in which the first layer 11 and the second layer 12 are made of the same SiC. However, the present invention is not limited to this, and the first layer 11 and the second layer 12 may be made of different materials. For example, the second layer 12 may be made of a silicon material other than SiC. The etcher ring 1 is not limited to two layers of SiC stacked, and may be three or more layers of SiC stacked. For example, the etcher ring 1 may have a structure in which three or more layers of SiC are stacked in order to increase the thickness of the etcher ring 1. When three or more layers of SiC are stacked, the third or more layers are, for example, layers stacked in sequence on the lower surface side of the second layer 12 in FIG. 1 to FIG. 3. In such an etcher ring having a structure in which three or more layers of SiC are stacked, the third or more layers of SiC are layers in which there is no risk of the interface being exposed, unlike the second layer 12, even if the first layer 11 is worn as described above. In this way, the technique relating to the etcher ring 1 of this embodiment can also be applied to an etcher ring having a structure in which three or more layers of SiC are stacked.

[0081] Furthermore, in the etcher ring 1 of the first embodiment, in addition to the second region 112 in the first layer 11, the first region 111 in the first layer 11 is also formed to have a thickness such that the second layer 12 is not exposed due to wear during etching. However, this is not limiting, and the region in which the layer thickness of the first layer 11 is made to have a thickness such that the second layer 12 is not exposed due to wear during etching may be at least the second region 112 in the first layer 11.

[0082] In the etcher 1 according to the first embodiment described above, the following technical effects can be obtained.

[0083] (1) In the etcher ring 1 of the first embodiment, as shown in Figures 2 and 3, in the second region 112, which is a region in which the first layer 11 is worn in the thickness direction when etching is performed, the thickness of the first layer 11 is formed to be a thickness that does not expose the second layer 12 due to wear during etching. As a result, in the etcher ring 1 including the first layer 11 and the second layer 12, the thickness of the first layer 11 can prevent the second layer 12 from being exposed.

[0084] (2) In the etcher ring 1 of the first embodiment, as shown in Fig. 1 to Fig. 3, the first layer 11 is formed so that the first layer 11 is thicker than the second layer 12 in the thickness direction of the second region 112. As a result, in the etcher ring 1 including the first layer 11 and the second layer 12, the first layer 11 is thicker than the second layer 12, so that it is possible to suppress exposure of the second layer 12 during etching.

[0085] (3) In the etcher ring 1 of the first embodiment, as shown in Figures 2 and 3, the second layer 12 is laminated below the first layer 11 such that the second layer 12 is present below the second region 112 in the first layer 11. As a result, in the etcher ring 1 including the first layer 11 and the second layer 12, the thickness of the first layer 11 can prevent the second layer 12 present below the first layer 11 from being exposed during etching.

[0086] (4) In the etcher 1 of the first embodiment, the first layer 11 and the second layer 12 are made of SiC. This makes it possible to prevent the second layer 12 from being exposed during etching in the etcher 1 in which the first layer 11 and the second layer 12 are made of SiC.

[0087] (5) In the etcher 1 of embodiment 1, as shown in FIG. 3, the first layer 11 in the second region 112 is a region that is worn in the thickness direction of the second region 112 when a wafer 2 having an edge held above the first region 111 is etched. This makes it possible to prevent the second layer 12 from being exposed during etching in the region of the etcher 1 that is worn during etching.

[0088] (6) In the etcher ring 1 of the first embodiment, as shown in Figures 2 and 3, the first layer 11 further includes a third region 113 adjacent to the outer periphery of the second region 112, and the third region 113 has a protruding shape so as to face the end of the wafer 2 when the end of the wafer 2 is held above the first region 111. This allows the third region 113 to surround the outer periphery of the wafer 2 when the wafer 2 is held in the etcher ring 1.

[0089] (7) In the method of manufacturing the etcher ring 1 of the first embodiment, as shown in Fig. 5 to Fig. 8, the first layer 11 is processed to include a first region 111 for holding an edge of the wafer 2 and a second region 112 adjacent to the outer periphery of the first region 111, and the thickness of the first layer 11 in the second region 112 is processed to a thickness that prevents the second layer 12 from being exposed due to wear during etching. As a result, in the etcher ring 1 including the first layer 11 and the second layer 12, it is possible to prevent the second layer 12 from being exposed.

[0090] (8) In the manufacturing method of the etcher ring 1 of the first embodiment, as shown in Fig. 5 to Fig. 8, the first layer 11 is processed to be thicker than the second layer 12 in the thickness direction of the second region 112. As a result, in the etcher ring 1 including the first layer 11 and the second layer 12, the first layer 11 is thicker than the second layer 12, and therefore it is possible to prevent the second layer 12 from being exposed during etching.

[0091] (9) In the etcher 1 of the first embodiment, as shown in Fig. 5 to Fig. 8, the second layer 12 is processed so that the second layer 12 exists below the second region 112 in the first layer 11. As a result, in the etcher 1 including the first layer 11 and the second layer 12, the thickness of the first layer 11 can prevent the second layer 12 existing below the first layer 11 from being exposed during etching.

[0092] [Embodiment 2] Next, a second embodiment will be described with reference to Figures 9 to 12. In the second embodiment, another method for manufacturing the etcher ring 1 shown in Figures 1 to 3 will be described.

[0093] The main differences between the second embodiment and the first embodiment are as follows. In the second embodiment, a base material 5a having a different shape from the base material 5 in the first embodiment is used (see FIG. 9, etc.). In the second embodiment, a laminate 6a is formed in which the first layer 61 and the second layer 62 are laminated in an order different from that of the first layer 61 and the second layer 62 in the laminate 6 in the first embodiment (see FIGS. 10 to 12, etc.). In the second embodiment, the laminate 6a is cut in an order different from that of the laminate 6 in the first embodiment (see FIGS. 11, 12, etc.).

[0094] (Method of manufacturing etcher ring 1) 9 to 11 described below show an example in which two etcher rings 1 are simultaneously manufactured in embodiment 2. In Fig. 9 to 11, in order to clarify the manufacturing range of one etcher ring 1, the boundary between the manufacturing ranges of the two etcher rings 1 is indicated by a dashed dotted line 70.

[0095] 9 is a cross-sectional view of a substrate 5a used in manufacturing the etcher ring 1 in the embodiment 2. The substrate 5a is a ring-shaped member in which a first region 51a on the inner periphery side is thinner than a second region 52a on the outer periphery side. Since the substrate 5a is ring-shaped, a circular space 53a is formed on the inner periphery side.

[0096] The first region 51a and the second region 52a of the base material 5a are shaped so that the interface between the laminated first layer 61 and second layer 62 has a cross-sectional shape similar to that of interface 15 shown in FIG. 2 and other figures.

[0097] FIG. 10 is a cross-sectional view of a laminate 6a in which a first layer 61 and a second layer 62 are laminated around a base material 5a in the first embodiment.

[0098] 10, a second layer 62 is first formed around a substrate 5a in a CVD film forming apparatus 4. The second layer 62 is a layer that becomes the second layer 12 of the etcher ring 1. The second layer 62 is a layer of SiC.

[0099] Thereafter, in the CVD film forming apparatus 4, the first layer 61 is formed around the second layer 62. The first layer 61 is a layer that becomes the first layer 11 of the etcher ring 1. The first layer 61 is a layer of SiC. Since the base material 5a of the laminate 6a has a ring shape, after the first layer 61 and the second layer 62 are laminated, a circular space portion 63a is formed on the inner peripheral side.

[0100] The laminate 6a after the second layer 62 is formed is generally stored outside the chamber 41 in Fig. 4 for a predetermined period of time. Thereafter, the laminate 6a with the second layer 62 formed is placed inside the chamber 41 again. Then, in such a laminate 6a, the first layer 61 is formed around the second layer 62. Note that the laminate 6a with the second layer 62 formed may be stored inside the chamber 41.

[0101] As shown in Fig. 10, the shape of the base material 5a is such that the thickness of the first region 51a on the inner periphery side is thinner than the thickness of the second region 52a on the outer periphery side. Accordingly, the shape of the second layer 62 of the laminate 6a is such that the thickness of the inner periphery side region is thinner than the thickness of the outer periphery side region, similar to the shape of the base material 5a. Accordingly, the shape of the first layer 61 is such that the thickness of the inner periphery side region is thinner than the thickness of the outer periphery side region, similar to the shape of the base material 5a.

[0102] After the laminate 6a shown in FIG. 10 is formed, the laminate 6a is processed in a processing device, whereby the etcher ring 1 having the shape shown in FIGS. 1 to 3 can be obtained.

[0103] Fig. 11 is a cross-sectional view of the laminate 6a showing a portion of the etcher ring 1 obtained by processing the laminate 6a of the embodiment 2 by a processing device. As shown in Fig. 11, two etcher rings 1 can be obtained from the laminate 6a.

[0104] In the following, the processing portion for obtaining the etcher ring 1 will be described by taking the etcher ring 1 shown at the bottom of Fig. 11 as a representative example among the regions for obtaining the two etcher rings 1 shown in Fig. 11. In the processing device, the laminate 6a is processed as follows, thereby obtaining the etcher ring 1 having the structure shown in Fig. 2.

[0105] When obtaining the etcher ring 1 shown in the lower part of the drawing from the laminate 6a, the processing device first performs a process of cutting and planarizing the lower surface side of the laminate 6a to a position such as the broken line 71a, and then a process of cutting and planarizing the upper surface side of the laminate 6a to a position such as the broken line 72a. As a result, both end faces of the laminate 6a in the stacking direction are planarized.

[0106] Next, in the processing device, the outer circumferential side of the laminate 6a is cut, for example, to a position such as dashed line 73a, to expose the second region 52a of the base material 5a, and the inner circumferential side of the laminate 6a is cut, for example, to a position such as dashed line 74a, to expose the first region 51a of the base material 5a.

[0107] In processing to expose the second region 52a of the base material 5a, the position of the center of the circle of the base material 5a is set as a reference position, and the outer periphery side of the laminate 6a is cut to a position that is the same as the position of the predetermined outer periphery dimension of the etcher ring 1 as shown by the dashed line 73a. In processing to expose the first region 51a of the base material 5a, the position of the center of the circle of the base material 5a is set as a reference position, and the inner periphery side of the laminate 6a is cut to a position that is the same as the position of the predetermined inner periphery dimension of the etcher ring 1 as shown by the dashed line 74a.

[0108] In the processing for exposing the first region 51a of the base material 5a, it is sufficient to cut the laminate 6a until at least the end portion on the outer periphery side and the end portion on the inner periphery side of the base material 5a are exposed, and cutting to the position indicated by the dashed line 73a and cutting to the position indicated by the dashed line 74a may be performed after removing the base material 5a.

[0109] Next, a process for removing the base material 5a is performed by chemical processing, whereby in the laminate 6a, a first member for producing the etcher ring 1 shown above the dashed line 70 in Fig. 11 and a second member for producing the etcher ring 1 shown below the dashed line 70 in Fig. 11 are separated.

[0110] In the following, a processing method for producing the etcher ring 1 will be described with reference to the members for producing the etcher ring 1 shown in the lower part of FIG.

[0111] 11 is held in a processing section of a processing device with the side of the first layer 61, which has been planarized as described above, facing up and down. Then, in the processing device, a process is performed to cut the upper surface side of the etcher ring 1 so that the thickness distribution of the first layer 11 in the radial direction of the etcher ring 1 becomes the thickness distribution shown in FIG.

[0112] Specifically, the lower surface side of the second member is cut using the position of the lower end of the base material 5a as a reference position so that the interface 15 between the first layer 11 and the second layer 12 in the etcher ring 1 has a cross-sectional shape as shown in Fig. 2. For example, the second member is cut to a position as shown by the dashed line 75a in Fig. 11, or to a position as shown by the dashed line 76a in Fig. 11. In this case, each position where the lower surface side of the second member is cut is estimated in advance based on the elapsed time from the start to the end of the deposition of the first layer 11 and the second layer 12, and the deposition speed of the first layer 11 and the second layer 12.

[0113] Moreover, the third region 113 of the first layer 11 in the etcher ring 1 shown in FIG. 11 is formed by cutting the second member from the center position of the circle of the base material 5a as the reference position to a predetermined position.

[0114] In addition, the processing device cuts the upper surface of the second member using the position of the lower end of the base material 5a as a reference position so that the upper surface of the second member has a cross-sectional shape as shown in Fig. 2. For example, the second member is cut to a position as shown by the dashed line 77a in Fig. 11. In this case, the position at which the upper surface of the second member is cut is estimated in advance based on the elapsed time from the start to the end of deposition of the first layer 11 and the second layer 12, and the deposition speeds of the first layer 11 and the second layer 12.

[0115] The first member can be processed in the same manner as the second member described above to obtain an etcher ring 1 having a structure as shown in FIG.

[0116] In the second embodiment, as described above, a laminate 6a as shown in FIG. 10 is formed in the CVD film forming apparatus 4, and then the laminate 6a is processed in a processing apparatus as shown in FIG. 11, whereby an etcher ring 1 having a structure as shown in FIGS. 1 to 3 can be obtained from the laminate 6a.

[0117] (Etcher ring 1 manufacturing process) Fig. 12 is a flowchart showing the manufacturing process of the etcher ring 1 according to the embodiment 2. The flow of the manufacturing process for realizing the manufacturing method of the etcher ring 1 described above with reference to Figs. 9 to 11 will be collectively described with reference to Fig. 12.

[0118] The manufacturing process shown in FIG. 12 will be explained mainly to summarize the manufacturing method of the etcher ring 1 and to clarify the flow of the manufacturing process.

[0119] In the process of step S11, a second layer 62 of SiC is formed around the base material 5a in the CVD film formation apparatus 4. Specifically, in the process of step S1, as described above, the second layer 62 is formed around the base material 5a so as to have the cross-sectional shape shown in FIG.

[0120] In the process of step S12, in the CVD film formation apparatus 4, a first layer 61 made of SiC is formed around the second layer 62. Specifically, in the process of step S12, as described above, the first layer 61 is formed around the second layer 62 so as to have the cross-sectional shape shown in Fig. 10. By performing the processes of steps S11 and S12, a stacked body 6a as shown in Fig. 10 is formed.

[0121] In the process of step S13, the processing device processes the upper surface side of the laminate 6a into a flat surface, and also processes the lower surface side of the laminate 6a into a flat surface. In the process of step S13, as described above, the inner peripheral side and the outer peripheral side of the laminate 6a are cut to process the upper surface side and the lower surface side of the laminate 6a into a flat surface.

[0122] In the process of step S14, the inner peripheral side and the outer peripheral side of the base material 5a are exposed in the processing device. Specifically, in the process of step S14, as described above, the inner peripheral side of the laminate 6a is cut to a predetermined first position with the position of the center of the circle of the base material 5a as the reference position. Furthermore, in the process of step S14, as described above, the outer peripheral side of the laminate 6a is cut to a predetermined second position with the position of the center of the circle of the base material 5a as the reference position, thereby exposing the outer peripheral side of the base material 5a.

[0123] In the process of step S15, the base material 5a is removed in the processing device. Specifically, in the process of step S15, the base material 5a is removed by chemical treatment as described above. As a result, the first member and the second member as described above are obtained.

[0124] In step S16, the processing device performs cutting processing on the portion of the first or second member that will become the upper surface of the etcher ring 1 to form the first layer 11 and the second layer 12 such that the layer thickness in the second region 112 of the first layer 11 shown in Figure 2 is such that the second layer 12 shown in Figure 2 will not be exposed due to wear during etching.

[0125] Specifically, in step S16, the processing device cuts the first or second member using the position of the lower end of the substrate 5a as a reference position so that the portion of the first or second member that will become the lower surface of the etcher ring 1 has a cross-sectional shape as shown in Figure 2.

[0126] In the process of step S16, the processing device cuts the first or second member with the position of the lower end of the base material 5a as a reference position so that the portion of the first or second member that will become the lower surface side of the etcher ring 1 has a cross-sectional shape as shown in Fig. 2. As a result, in the process of step S16, the second layer 12 is processed so as to be present below the second region 112 in the first layer 11.

[0127] In the second embodiment, by carrying out the manufacturing process as described above, the etcher ring 1 having the structure shown in FIGS. 1 and 2 can be obtained.

[0128] In the etcher 1 of the second embodiment described above, the same technical effects as those in the first embodiment can be obtained with respect to the techniques common thereto.

[0129] [Embodiment 3] Next, a third embodiment will be described with reference to Figures 13 to 17. In the third embodiment, another configuration example will be described in which the thickness of the first layer 11 is formed so that the second layer 12 is not exposed due to wear caused by etching in the second region 112 of the first layer 11 as shown in Figures 1 to 3.

[0130] The main differences between the third embodiment and the first and second embodiments are as follows: In the third embodiment, the second layer 12a is laminated below the first layer 11a in such a manner that the second layer 12a is not present below the second region 112a of the first layer 11a.

[0131] (Overall configuration of etcher ring 1a) Fig. 13 is a cross-sectional view of the entire etcher ring 1a in embodiment 3. Fig. 13 shows a cross section taken along the center line of the ring-shaped etcher ring 1a. Fig. 14 is a cross-sectional view of a part of the etcher ring 1a in embodiment 1 of the etcher ring 1a in embodiment 3. Fig. 14 shows an enlarged view of the cross section shown on the right side of the etcher ring 1a in Fig. 13.

[0132] 13 and 14, the etcher ring 1a has a second layer 12a formed below a first layer 11a. The first layer 11a is made of SiC, similar to the above-described first layer 11. The second layer 12a is made of SiC, similar to the above-described second layer 12.

[0133] The configuration in Fig. 14 corresponds to the configuration in Fig. 2 as follows: A first region 111a corresponds to the first region 111 in Fig. 2 etc. A second region 112a corresponds to the second region 112 in Fig. 2 etc. A third region 113a corresponds to the third region 113 in Fig. 2 etc. A fourth region 114a corresponds to the fourth region 114 in Fig. 2 etc.

[0134] The first surface 91a corresponds to the first surface 91 in FIG. 2 etc. The second surface 92a corresponds to the second surface 92 in FIG. 2 etc. The third surface 93a corresponds to the third surface 93 in FIG. 2 etc. The fourth surface 94a corresponds to the fourth surface 94 in FIG. 2 etc. The second region 122a of the second layer 12 corresponds to the second region 122 in FIG. 2 etc. The third region 123a of the second layer 12 corresponds to the third region 123 in FIG. 2 etc. The interface 15a corresponds to the interface 15 in FIG. 2 etc.

[0135] The etcher ring 1a shown in Figures 13 and 14 differs from the etcher ring 1 in Figure 1 in that, as specifically shown in Figure 14, a second layer 12a is not formed below the second region 112a of the first layer 11a.

[0136] As specifically shown in Fig. 14, the second layer 12a is laminated below the first layer 11a in a manner that the second layer 12a does not exist below the second region 112a of the first layer 11a. For example, as shown in Fig. 14, the second layer 12a is not formed below the first region 111a, the second region 112a, and the third region 113a of the first layer 11a, but is formed below the fourth region 114a of the first layer 11a. Therefore, in the etchering 1a in the third embodiment, the second layer 12a does not include the first region 121 of the second layer 12 shown in Fig. 2 and the like.

[0137] (A configuration that prevents exposure of the second layer 12 due to wear of the first layer 11 during etching) FIG. 15 is a cross-sectional view illustrating the wear of the first layer 11 during etching of the etcher ring 1a in the third embodiment.

[0138] When the wafer 2 is plasma etched in the etching apparatus, the first layer 11a is worn away in the second region 112a, causing holes 3 and reducing the thickness of the first layer 11a, as shown in Fig. 15. To prevent the second layer 12a from being exposed due to such wear caused by etching, the first layer 11a is formed so that the layer thickness in the second region 112a is such that the second layer 12a is not exposed due to wear caused by etching. The second layer 12a does not exist below the second region 112a of the first layer 11.

[0139] In this manner, in the etcher ring 1 of the embodiment, the thickness of the second region 112a of the first layer 11a is formed to a thickness that prevents the second layer 12 from being exposed due to wear during etching, and the second layer 12a does not exist below the second region 112a of the first layer 11. As a result, for the etcher ring 1a including the first layer 11 and the second layer 12, it is possible to prevent the second layer 12 from being exposed during etching.

[0140] (Method of manufacturing etcher ring 1a) Fig. 16 is a cross-sectional view of the laminate 6 showing a portion of the etcher ring 1a obtained by processing the laminate 6 of the embodiment 3 by a processing device. As shown in Fig. 16, two etcher rings 1a can be obtained from the laminate 6.

[0141] The manufacturing method of the etcher ring 1a of embodiment 3 is the same as the method described in embodiment 1 using Figures 5 and 6, up to the process of forming a laminate 6 in which a first layer 61 and a second layer 62 are laminated around a substrate 5.

[0142] In the following, the processing portion for obtaining the etcher ring 1a will be described by taking the etcher ring 1a shown at the bottom of Fig. 16 as a representative example among the regions for obtaining the two etcher rings 1a shown in Fig. 16. In the processing device, the laminate 6 is processed as follows to obtain the etcher ring 1a having the structure shown in Fig. 13.

[0143] When obtaining the etcher ring 1a shown in the lower part of the drawing from the laminate 6, the processing device first performs a process of cutting and planarizing the lower surface side of the laminate 6, for example, to a position shown by the dashed line 71b, and then a process of cutting and planarizing the upper surface side of the laminate 6, for example, to a position shown by the dashed line 72b. As a result, both end faces of the laminate 6 in the stacking direction are planarized.

[0144] Next, in the processing device, the outer periphery of the laminate 6 is cut, for example, to a position such as dashed line 73b, to expose the first region 51 of the substrate 5, and the inner periphery of the laminate 6 is cut, for example, to a position such as dashed line 74b, to expose the second region 52 of the substrate 5.

[0145] In processing to expose the first region 51 of the base material 5, the position of the center of the circle of the base material 5 is used as a reference position, and the outer periphery side of the laminate 6 is cut to a position that is the same as the position of the predetermined outer periphery dimension of the etcher ring 1a as shown by the dashed line 73b. In processing to expose the second region 52 of the base material 5, the position of the center of the circle of the base material 5 is used as a reference position, and the inner periphery side of the laminate 6 is cut to a position that is the same as the position of the predetermined inner periphery dimension of the etcher ring 1a as shown by the dashed line 74b.

[0146] In the process of exposing the first region 51 of the substrate 5, it is sufficient to cut the laminate 6 until at least the end portion on the outer periphery side and the end portion on the inner periphery side of the substrate 5 are exposed, and cutting to the position indicated by the dashed line 73b in FIG. 16 and cutting to the position indicated by the dashed line 74b in FIG. 16 may be performed after removing the substrate 5.

[0147] Next, a process for removing the base material 5 is performed by chemical processing, whereby in the laminate 6, a first member for producing the etcher ring 1a shown in the lower part of FIG. 16 and a second member for producing the etcher ring 1a shown in the lower part of FIG. 16 are separated.

[0148] In the following, a processing method for producing the etcher ring 1a will be described with reference to the members for producing the etcher ring 1a shown in the lower part of FIG.

[0149] The second member for producing the etcher ring 1a shown in the lower part of Fig. 16 is held in a processing section of a processing device with the side of the second layer 62 planarized as described above facing downward. Then, in the processing device, a process is performed to cut the upper surface side of the etcher ring 1a so that the thickness distribution of the first layer 11a in the radial direction of the etcher ring 1a becomes the thickness distribution shown in Fig. 2.

[0150] Specifically, the upper surface side of the second member is cut using the position of the lower end of the base material 5 as a reference position so that the interface 15a between the first layer 11a and the second layer 12a in the etcher ring 1 has a cross-sectional shape as shown in Fig. 2. For example, the second member is cut to a position as shown by the dashed line 75b in Fig. 16, or to a position as shown by the dashed line 76b in Fig. 16. In this case, each position at which the upper surface side of the second member is cut is estimated in advance based on the elapsed time from the start to the end of the deposition of the first layer 11a and the second layer 12a, and the deposition speed of the first layer 11a and the second layer 12a.

[0151] Moreover, the third region 113a of the first layer 11a in the etcher ring 1a shown in FIG. 14 is formed by cutting the second member from the center position of the circle of the base material 5 as the reference position to a predetermined position.

[0152] In addition, in the processing device, the lower surface side of the second member is cut using the position of the lower end of the base material 5 as a reference position so that the lower surface side of the second member has a cross-sectional shape as shown in Fig. 14. For example, as shown by the dashed line 77b in Fig. 16, the second member is cut until the first region 111a, the second region 112a, and the third region 113a of the first layer 11a shown in Fig. 14 reach the position of the first layer 61a just before the second layer 62a. In this case, the position where the lower surface side of the second member is cut is estimated in advance based on the elapsed time from the start of deposition of the first layer 11a and the second layer 12a to the end of deposition, and the deposition speed of the first layer 11a and the second layer 12a.

[0153] As a result, the second layer 12a does not exist below the first region 111a, the second region 112a, and the third region 113a of the first layer 11a in the etcher ring 1a, as shown in FIG.

[0154] The first member can be processed in the same manner as the second member described above to obtain an etcher ring 1a having a structure as shown in FIG.

[0155] In embodiment 3, as described above, a stack 6 as shown in FIG. 6 is formed in a CVD film forming apparatus 4, and then the stack 6 is processed in a processing apparatus as shown in FIG. 16, whereby an etcher ring 1a having a structure as shown in FIGS. 13 to 15 can be obtained from the stack 6.

[0156] (Manufacturing process of etcher ring 1a) Fig. 17 is a flowchart showing the manufacturing process of the etcher ring 1a according to the embodiment 3. The flow of the manufacturing process for realizing the manufacturing method of the etcher ring 1a described above with reference to Figs. 5, 6, and 16 will be collectively described with reference to Fig. 17.

[0157] The manufacturing process shown in FIG. 17 will be explained mainly to summarize the manufacturing method of the etcher ring 1a and to clarify the flow of the manufacturing process.

[0158] In step S21, a first layer 61 of SiC is formed around the substrate 5 in the CVD film forming apparatus 4. Step S21 is the same as step S1 in the first embodiment.

[0159] In the process of step S22, in the CVD film formation apparatus 4, a second layer 62 made of SiC is formed around the first layer 61. The process of step S22 is similar to the process of step S2 in the first embodiment.

[0160] In the process of step S23, the processing device processes the upper surface side of the laminate 6 into a flat surface, and also processes the lower surface side of the laminate 6 into a flat surface. The process of step S23 is the same as step S3 in the first embodiment.

[0161] In the process of step S24, the inner peripheral side and the outer peripheral side of the substrate 5 are exposed in the processing device. The process of step S24 is the same as step S4 in the first embodiment.

[0162] In the process of step S25, the processing device removes the base material 5. The process of step S25 is the same as the process of step S25 in the first embodiment.

[0163] In step S26, the processing device performs cutting processing on the first member or the second member to form the first layer 11a and the second layer 12a such that the layer thickness in the second region 112a of the first layer 11a shown in FIG. 14 is such that the second layer 12a shown in FIG. 14 is not exposed due to loss caused by etching.

[0164] Specifically, in the process of step S26, as described above, the position of the lower end of the substrate 5 is set as the reference position, and the surface on the side of the first layer 11a is processed by, for example, cutting a portion that will become the upper surface of the etcher ring 1 over a predetermined thickness.

[0165] In addition, in the process of step S26, the processing device cuts the first member or the second member with the position of the lower end of the base material 5 as a reference position so that the portion of the first member or the second member that will become the lower surface side of the etcher ring 1a has a cross-sectional shape as shown in Fig. 14. As a result, in the process of step S26, the second layer 12 is processed so as not to be present below the second region 112 of the first layer 11.

[0166] In the third embodiment, by carrying out the manufacturing process as described above, it is possible to obtain the etcher ring 1a having the structure shown in FIGS.

[0167] In the etcher 1a of the third embodiment described above, the same technical effects as those of the first embodiment can be obtained with respect to the techniques common to the first embodiment.

[0168] In the etcher 1a of the third embodiment described above, the following unique technical effects can be obtained.

[0169] (1) In the etcher ring 1a of the third embodiment, as shown in Figures 14 and 15, the second layer 12a is laminated below the first layer 11a such that the second layer 12a does not exist below the second region 112a in the first layer 11a. As a result, in the etcher ring 1a including the first layer 11a and the second layer 12a, the second layer 12a does not exist below the first layer 11a, so that exposure of the second layer 12a during etching can be suppressed.

[0170] (2) In the etcher ring 1 of the third embodiment, as shown in Fig. 16 and Fig. 17, the second layer 12a is processed so that the second layer 12 does not exist below the second region 112a of the first layer 11a. As a result, in the etcher ring 1a including the first layer 11a and the second layer 12a, the second layer 12a does not exist below the first layer 11a, so that it is possible to suppress exposure of the second layer 12a during etching.

[0171] [Embodiment 4] Next, a fourth embodiment will be described with reference to Figures 18 to 19. In the fourth embodiment, another method for manufacturing the etcher ring 1a shown in Figures 13 to 15 will be described.

[0172] The main differences between the fourth embodiment and the third embodiment are as follows. In the fourth embodiment, a base material 5a different from the base material 5 in the third embodiment is used. In the fourth embodiment, a laminate 6a is formed in which the first layer 61a and the second layer 62a are laminated in an order different from that of the first layer 61 and the second layer 62 in the laminate 6 in the third embodiment. In the fourth embodiment, the laminate 6a is cut in an order different from that of the laminate 6 in the third embodiment.

[0173] (Method of manufacturing etcher ring 1a) Fig. 18 is a cross-sectional view of the laminate 6 showing a portion of the etcher ring 1a obtained by processing the laminate 6a of the fourth embodiment by a processing device. As shown in Fig. 18, two etcher rings 1a can be obtained from the laminate 6a. In Fig. 18, in order to clarify the manufacturing range of one etcher ring 1a, the boundary between the manufacturing ranges of the two etcher rings 1a is indicated by a dashed line 70.

[0174] In embodiment 4, as in embodiment 2, a second layer 62 shown in FIG. 10 is formed around a base material 5a shown in FIG. 9, and then a first layer 61 is formed around the second layer 62 to form a laminate 6a.

[0175] The manufacturing method of the etcher ring 1a of embodiment 4 is the same as the method described in embodiment 2 using Figures 9 and 10 up to the process of forming a laminate 6a in which a second layer 62 and a first layer 61 are laminated around a substrate 5.

[0176] In the following, the processing portion for obtaining the etcher ring 1a will be described by taking the etcher ring 1a shown at the bottom of Fig. 18 as a representative example among the regions for obtaining the two etcher rings 1a shown in Fig. 18. In the processing device, the laminate 6a is processed as follows to obtain the etcher ring 1a having the structure shown in Fig. 14.

[0177] When the etcher ring 1a shown in the lower part of the drawing is obtained from the laminate 6a, the processing device first performs a process of cutting the lower surface of the laminate 6a to a position such as the broken line 71a to make it flat, and then a process of cutting the upper surface of the laminate 6a to a position such as the broken line 72a to make it flat. As a result, both end surfaces of the laminate 6a in the stacking direction are flattened.

[0178] Next, in the processing device, the outer circumferential side of the laminate 6a is cut, for example, to a position such as dashed line 73a, to expose the second region 52a of the base material 5a, and the inner circumferential side of the laminate 6a is cut, for example, to a position such as dashed line 74a, to expose the first region 51a of the base material 5a.

[0179] In the process of exposing the second region 52a of the base material 5a, the position of the center of the circle of the base material 5a is set as a reference position, and the outer periphery side of the laminate 6a is cut to a position that is the same as the position of the predetermined outer periphery dimension of the etcher ring 1a as shown by the dashed line 73a. In the process of exposing the first region 51a of the base material 5a, the position of the center of the circle of the base material 5a is set as a reference position, and the inner periphery side of the laminate 6a is cut to a position that is the same as the position of the predetermined inner periphery dimension of the etcher ring 1a as shown by the dashed line 74a.

[0180] In the processing for exposing the first region 51a of the base material 5a, it is sufficient to cut the laminate 6a until at least the end portion on the outer periphery side and the end portion on the inner periphery side of the base material 5a are exposed, and cutting to the position indicated by the dashed line 73a and cutting to the position indicated by the dashed line 74a in Figure 11 may be performed after removing the base material 5a.

[0181] Next, a process for removing the base material 5a is performed by chemical processing, whereby the laminate 6a is separated into a first member for producing the etcher ring 1a shown in the lower part of FIG. 18 and a second member for producing the etcher ring 1a shown in the lower part of FIG.

[0182] In the following, a processing method for producing the etcher ring 1a will be described with reference to the members for producing the etcher ring 1a shown in the lower part of FIG.

[0183] The second member for producing the etcher ring 1a shown in the lower part of Fig. 18 is held in a processing section of a processing device with the side of the first layer 61 planarized as described above facing the up-down direction. Then, in the processing device, a process is performed to cut the upper surface side of the etcher ring 1a so that the thickness distribution of the first layer 11 in the radial direction of the etcher ring 1a becomes the thickness distribution shown in Fig. 14.

[0184] Specifically, the lower surface side of the second member is cut using the position of the lower end of the base material 5a as a reference position so that the interface 15a between the first layer 11a and the second layer 12a in the etcher ring 1a shown in Fig. 14 has a cross-sectional shape as shown in Fig. 14. For example, the second member is cut to a position as shown by the dashed line 75a in Fig. 18, or the second member is cut to a position as shown by the dashed line 76a in Fig. 18. In this case, each position at which the lower surface side of the second member is cut is estimated in advance based on the elapsed time from the start to the end of the deposition of the first layer 11a and the second layer 12a, and the deposition speed of the first layer 11a and the second layer 12a.

[0185] Furthermore, the third region 113a of the first layer 11a in the etcher ring 1a shown in FIG. 14 is formed by cutting the second member from the center position of the circle of the base material 5a as the reference position to a predetermined position.

[0186] In addition, the processing device cuts the upper surface of the second member using the position of the lower end of the base material 5a as a reference position so that the upper surface of the second member has a cross-sectional shape as shown in Fig. 14. For example, the second member is cut to a position as shown by the dashed line 77a in Fig. 18. In this case, the position at which the upper surface of the second member is cut is estimated in advance based on the elapsed time from the start to the end of deposition of the first layer 11a and the second layer 12a and the deposition speed of the first layer 11a and the second layer 12a.

[0187] As a result, the second layer 12a does not exist below the first region 111a, the second region 112a, and the third region 113a of the first layer 11a in the etcher ring 1a, as shown in FIG.

[0188] The first member can be processed in the same manner as the second member described above to obtain an etcher ring 1a having a structure as shown in FIG.

[0189] In embodiment 4, as described above, a laminate 6a as shown in FIG. 10 is formed in a CVD film forming apparatus 4, and then the laminate 6a is processed in a processing apparatus as shown in FIG. 18, whereby an etcher ring 1a having a structure as shown in FIGS. 13 to 15 can be obtained from the laminate 6a.

[0190] (Manufacturing process of etcher ring 1a) Fig. 19 is a flowchart showing the manufacturing process of the etcher ring 1a according to the embodiment 4. The flow of the manufacturing process for realizing the manufacturing method of the etcher ring 1a described above with reference to Figs. 9, 10, and 18 will be collectively described with reference to Fig. 19.

[0191] The manufacturing process shown in FIG. 19 will be explained mainly to summarize the manufacturing method of the etcher ring 1a and to clarify the flow of the manufacturing process.

[0192] In step S31, a second layer 62 of SiC is formed around the substrate 5a in the CVD film forming apparatus 4. Step S31 is the same as step S11 in the second embodiment.

[0193] In the process of step S32, in the CVD film forming apparatus 4, the first layer 61 made of SiC is formed around the second layer 62. The process of step S32 is similar to the process of step S12 in the second embodiment.

[0194] In the process of step S33, the processing device processes the upper surface side of the laminate 6a into a flat surface, and also processes the lower surface side of the laminate 6a into a flat surface. The process of step S33 is the same as step S13 in the second embodiment.

[0195] In the process of step S34, the inner peripheral side and the outer peripheral side of the base material 5a are exposed in the processing device. The process of step S34 is the same as step S14 in the second embodiment.

[0196] In the process of step S35, the base material 5a is removed in the processing device. Step S45 is the same as step S15 in the second embodiment.

[0197] In step S36, the processing device performs cutting processing on the first member or the second member so that the layer thickness in the second region 112a of the first layer 11a shown in FIG. 14 is a thickness that will not expose the second layer 12a shown in FIG. 14 due to wear during etching, and so that the first layer 11a and the second layer 12a are formed.

[0198] Specifically, in the process of step S36, as described above, the position of the lower end of the substrate 5a is set as the reference position, and the surface on the side of the first layer 11 is processed by, for example, cutting a portion that will become the upper surface of the etcher ring 1a over a predetermined thickness.

[0199] In step S36, the processing device cuts the first or second member with the position of the lower end of the base material 5a as a reference position so that the portion of the first or second member that will become the lower surface side of the etcher ring 1a has a cross-sectional shape as shown in Fig. 14. As a result, in step S36, the second layer 12 is processed so as not to be present below the second region 112 in the first layer 11.

[0200] In the fourth embodiment, by carrying out the manufacturing process as described above, an etcher ring 1a having the structure shown in FIGS. 13 and 14 can be obtained.

[0201] In the etcher 1a of the embodiment 4 described above, the techniques common to the embodiment 1 provide the same technical effects as the embodiment 1, and the techniques common to the embodiment 3 provide the same technical effects as the embodiment 1.

[0202] [Summary of the embodiment] Next, features of the embodiments of the present disclosure will be summarized.

[0203] (Item 1) An etcher ring (etcher ring 1, 1a) for holding a wafer (wafer 2) to be etched, the etcher ring including a first region (first region 111, 111a) and a second region (second region 112, 112a) adjacent to the outer periphery of the first region (first region 111, 111a), and a first layer (first layer 11, 11a) in which an edge of the wafer (wafer 2) is held above the first region (first region 111, 111a). and a second layer (second layer 12, 12a) laminated below the first layer (first layer 11, 11a), wherein the first layer (first layer 11, 11a) is formed so that the layer thickness in the second region (second region 112, 112a) is such that the second layer (second region 112, 112a) is not exposed due to wear during the etching (the thickness of the first layer 11 in Figure 2 and the thickness of the first layer 11a in Figure 14).

[0204] According to this configuration, in the second region, which is a region where the first layer is worn in the thickness direction when etching is performed, the thickness of the first layer is formed to a thickness that does not expose the second layer due to wear during etching. As a result, in an etcher having a first layer and a second layer, the thickness of the first layer can prevent the second layer from being exposed.

[0205] (Item 2) The etching described in item 1, wherein the first layer (first layer 11, 11a) is formed so that the first layer (first layer 11, 11a) is thicker than the second layer (second layer 12, 12a) in the thickness direction of the second region (second region 112, 112a) (Figures 2 and 14).

[0206] According to this configuration, the first layer is formed to be thicker than the second layer in the thickness direction of the second region, so that in an etcher having the first layer and the second layer, the first layer is thicker than the second layer, and thus it is possible to prevent the second layer from being exposed during etching.

[0207] (Item 3) The etching method described in item 1 or 2, wherein the second layer (second layer 12) is laminated below the first layer (first layer 11) such that the second layer (second layer 12) is present below the second region (second region 112) in the first layer (first layer 11) (FIG. 2).

[0208] According to this configuration, the second layer is laminated below the first layer such that the second layer is present below the second region of the first layer. As a result, in an etcher having the first and second layers, the thickness of the first layer can prevent the second layer present below the first layer from being exposed during etching.

[0209] (Item 4) The etching described in item 1 or 2, wherein the second layer (second layer 12a) is laminated below the first layer (first layer 11a) such that the second layer (second layer 12a) is not present below the second region (second region 112a) in the first layer (first layer 11a) (Figure 14).

[0210] According to this configuration, the second layer is laminated below the first layer such that the second layer does not exist below the second region of the first layer. As a result, in an etcher having the first layer and the second layer, the second layer does not exist below the first layer, so that exposure of the second layer during etching can be suppressed.

[0211] (Item 5) The etchering according to any one of items 1 to 4, wherein the first layer (first layer 11, 11a) and the second layer (second layer 12, 12a) are made of SiC.

[0212] According to this configuration, in an etcher in which the first layer and the second layer are made of SiC, it is possible to prevent the second layer from being exposed during etching.

[0213] (Item 6) The second region (second region 112, 112a) in the first layer (first layer 11, 11a) is a region in which the first layer (first layer 11, 11a) is worn in the thickness direction of the second region (second region 112, 112a) when the wafer (wafer 2) with its end held above the first region (first region 111, 111a) is subjected to the etching (Figures 3 and 15).

[0214] According to this configuration, in the etchering, it is possible to prevent the second layer from being exposed during etching in the region that is worn away during etching.

[0215] (Item 7) The etchering described in any one of items 1 to 5, wherein the first layer (first layer 11, 11a) further includes a third region (third region 113, 113a) adjacent to the outer periphery of the second region (second region 112, 112a), and the third region (third region 113, 113a) has a protruding shape so as to face an edge of the wafer (wafer 2) when the edge of the wafer (wafer 2) is held above the first region (first layer 11, 11a) (Figures 2 and 14).

[0216] According to this configuration, when a wafer is held in an etcher, the outer periphery of the wafer can be surrounded by the third region.

[0217] (Item 8) A method for manufacturing an etcher ring for holding a wafer (wafer 2) to be etched, comprising steps of laminating a first layer (first layer 61, 11, first layer 61a, 61a) and a second layer (second layer 62, 12, second layer 62a, 12a) around a ring-shaped base material (base material 5, 5a) (steps S1, S2, steps S11, S12, steps S21, S22, steps S31, S32), and laminating the first layer (first layer 61, 11, first layer 61a, 11a) and the second layer (second layer 62, a step of processing both end faces in the stacking direction of the first layer (first layer 61, 11, first layer 61a, 11a) into a flat surface (step S3, step S13, step S23, step S33); a step of exposing the inner periphery and the outer periphery of the base material (base material 5, 5a) (step S4, step S14, step S24, step S34); a step of removing the base material (base material 5, 5a) (step S5, step S15, step S25, step S35); and a process (step S6, step S16, step S26, step S36) of processing the surface of the wafer (wafer 2) on which the edge is held. The first layer (first layer 61, 11, first layer 61a, 11a) and the second layer (second layer 62, 12, second layer 62a, 12a) are laminated by forming one layer around the base material and then forming the other layer around the one layer (FIGS. 6 and 10). The first layer (first layer 61, 11, first layer 61a, 11a) is laminated on the wafer (wafer 2). a first region (first region 111, 111a) in which the ends of the first and second layers (second region 112, 112a) are held, and a second region (second region 112, 112a) adjacent to the outer periphery of the first region, and a thickness of the second region (second layer 62, 12, second layer 62a, 12a) is processed to a thickness that does not cause the second layer (second layer 62, 12, second layer 62a, 12a) to be exposed due to wear during the etching (steps S6, S16, S26, S36).

[0218] According to this configuration, the first layer is processed to include a first region that holds the edge of the wafer and a second region adjacent to the outer periphery of the first region, and the thickness of the first layer in the second region is processed to a thickness that does not expose the second layer due to wear during etching. This makes it possible to prevent the second layer from being exposed in an etcher having the first and second layers.

[0219] (Item 9) A method for manufacturing an etcher ring as described in Item 8, wherein the first layer (first layer 11, 11a) is processed so that the first layer (first layer 11, 11a) is thicker than the second layer (second layer 12, 12a) in the thickness direction of the second region (second region 112, 112a) (steps S6, S16, S26, and S36).

[0220] According to this configuration, the first layer is processed so as to be thicker than the second layer in the thickness direction of the second region, so that in an etcher having the first layer and the second layer, the first layer is thicker than the second layer, and thus it is possible to prevent the second layer from being exposed during etching.

[0221] (Item 10) A method for manufacturing an etcher according to item 8 or 9, wherein the second layer (second layer 12) is processed so that the second layer (second layer 12) exists below the second region (second region 112) in the first layer (first layer 11) (steps S6, S16, S26, and S36).

[0222] According to this configuration, the second layer is laminated below the first layer such that the second layer is present below the second region of the first layer. As a result, in an etcher having the first and second layers, the thickness of the first layer can prevent the second layer present below the first layer from being exposed during etching.

[0223] (Item 11) The method for manufacturing an etcher according to item 8 or 9, wherein the second layer (second layer 12a) is processed so that the second layer (second layer 12a) does not exist below the second region (second region 112a) in the first layer (first layer 11a) (steps S6, S16, S26, and S36).

[0224] According to this configuration, the second layer is processed so that the second layer does not exist below the second region of the first layer. As a result, in an etcher having the first layer and the second layer, the second layer does not exist below the first layer, so that it is possible to suppress exposure of the second layer during etching.

[0225] The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. The scope of the present disclosure is defined by the claims, not by the description of the embodiments described above, and is intended to include all modifications within the meaning and scope of the claims. [Explanation of symbols]

[0226] 2 Wafer, 1,1a Etcher ring, 111,111a 1st area, 112,112a 2nd area, 11,11a,61,61a 1st layer, 12,12a,62,62a 2nd layer, 113,113a 3rd area, 5,5a Base material.

Claims

1. an etcher ring for holding a wafer to be etched, a first layer including a first region and a second region adjacent to an outer periphery of the first region, the first region being above which an edge of the wafer is held; a second layer laminated below the first layer, The first layer is formed such that the thickness of the layer in the second region is such that the second layer is not exposed due to wear during the etching.

2. The method of etching according to claim 1 , wherein the first layer is formed so as to be thicker than the second layer in a thickness direction of the second region.

3. 3. The method of claim 1, wherein the second layer is deposited below the first layer such that the second layer is present below the second region of the first layer.

4. 3. The method of claim 1 or 2, wherein the second layer is deposited below the first layer such that the second layer is absent below the second region of the first layer.

5. The method of claim 1 or 2, wherein the first layer and the second layer are made of SiC.

6. The etchering method according to claim 1 or claim 2, wherein the second region in the first layer is a region in which the first layer is worn in the thickness direction of the second region when the wafer, whose end is held above the first region, is etched.

7. The first layer further includes a third region adjacent to an outer periphery of the second region, 3. The etcher according to claim 1, wherein the third region has a protruding shape so as to face an edge of the wafer when the edge of the wafer is held above the first region.

8. 1. A method of manufacturing an etcher ring for holding a wafer to be etched, comprising the steps of: laminating a first layer and a second layer around a ring-shaped substrate; processing both end faces of the first layer and the second layer in a stacking direction into flat surfaces; exposing an inner periphery and an outer periphery of the substrate; removing the substrate; and processing a surface of the first layer on which an edge of the wafer is held; the first layer and the second layer are laminated by forming one layer around the substrate and then forming the other layer around the one layer; The first layer is Processing the wafer to include a first region in which an edge of the wafer is held and a second region adjacent to the outer periphery of the first region; A method for manufacturing an etcher ring, comprising processing the layer in the second region to a thickness such that the second layer is not exposed due to wear caused by the etching.

9. The method for manufacturing an etcher ring according to claim 8 , wherein the first layer is processed so as to be thicker than the second layer in a thickness direction of the second region.

10. The method for manufacturing an etcher ring according to claim 8 or 9, wherein the second layer is processed so that the second layer exists below the second region of the first layer.

11. The method for producing an etcher ring according to claim 8 or 9, wherein the second layer is processed so as not to be present below the second region of the first layer.

Images