Die attach film and dicing die attach film

Abstract

To provide a die attach film which can suppress generation of voids between a semiconductor chip and a die attach film in a mount step and can suppress generation of breakages in the base material layer of the dicing die attach film in a pick-up step at the same time.SOLUTION: A die attach film has a thermoplastic resin as an organic component and the thermoplastic resin includes an acrylic polymer with mass average molecular amount is eighty thousands at a maximum. The melt viscosity at the temperature of 80°C is 30kPa.s at a maximum.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a die-bonding film and a dicing die-bonding film. [Background technology]

[0002] 2. Description of the Related Art Conventionally, it has been known to use a dicing die bond film in order to separate (cut) one semiconductor wafer into a plurality of semiconductor chips (dies) (for example, Patent Document 1 below). The dicing die bond film includes a dicing tape having a pressure-sensitive adhesive layer laminated on a base layer, and a die bond film releasably laminated on the pressure-sensitive adhesive layer of the dicing tape.

[0003] An example of a method for obtaining a plurality of semiconductor chips (dies) from one semiconductor wafer using the dicing die bond film is the following procedure. (1) After one side of the first semiconductor wafer is attached onto a wafer processing tape, the first semiconductor wafer is cut in a matrix pattern from the other side toward the one side to a position midway in the thickness direction, i.e., by performing half-cut processing on the first semiconductor wafer, a plurality of grooves are formed in the first semiconductor wafer (half-cut process). The other surface of the one semiconductor wafer is a circuit forming surface, and a plurality of electrode portions are provided on the other surface to be electrically connected to other members. The half-cutting process is carried out so that at least one electrode portion is disposed in each region after cutting into a matrix shape. (2) A backgrind tape is applied to the other surface (the surface on which a plurality of grooves are formed) of the first semiconductor wafer that has been subjected to half-cut processing, and the wafer processing tape is peeled off from the one surface of the first semiconductor wafer, and then the first semiconductor wafer is ground from the one surface to a midpoint in the thickness direction. That is, the first semiconductor wafer is subjected to backgrind processing (backgrinding process). The one semiconductor wafer that has been subjected to the back-grinding process is cut (fractionated) into a plurality of semiconductor chips along the plurality of grooves. (3) After the one side of the first semiconductor wafer that has been back-grinded is adhered to the die bond film of the dicing die bond film, the back-grind tape is peeled off from the other side of the first semiconductor wafer (mounting process). (4) A laser is irradiated from the other surface side of the one semiconductor wafer mounted on the die bond film to cut the areas of the die bond film corresponding to the plurality of grooves (laser cutting process). That is, the die bond film is divided (cut) along the plurality of grooves by laser irradiation. (5) The die bond film that has been cut into individual pieces is peeled away from the adhesive layer, and each of the multiple semiconductor chips is picked up with the die bond film that has been cut into individual pieces attached (pick-up process). At least one electrode portion is disposed on the other surface of each of the plurality of semiconductor chips.

[0004] In addition, the semiconductor chip to which the die bond film that has been diced (cut) is attached (hereinafter also referred to as the semiconductor chip with the diced die bond film) is picked up and then used to construct a semiconductor device, for example, according to the following procedure. (1') The individual semiconductor chips with die-bonding film are attached to the wiring substrate (die-bonding step). (2') After electrically connecting the singulated semiconductor chip with die-bond film and the wiring board by a bonding wire or the like, specifically, after electrically connecting an electrode portion arranged on one side of the singulated semiconductor chip with die-bond film and an electrode portion arranged on the wiring board by a bonding wire or the like, the semiconductor chip is resin-sealed using a sealing resin. (3') The sealing resin is cured at a predetermined temperature (for example, 175° C.), thereby obtaining a semiconductor package including the semiconductor chip with the individualized die-bonding film. (4') The semiconductor package is electrically connected to a motherboard by soldering at a predetermined temperature (for example, 260° C.), thereby obtaining a semiconductor device including the semiconductor chip with the individualized die-bonding film. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2011-23607 A Summary of the Invention [Problem to be solved by the invention]

[0006] However, in the mounting process (3) above, voids may occur between the one side of the one semiconductor wafer, more specifically, between one side of each of the multiple semiconductor chips in an individualized (cleaved) state, and the die bond film before being individualized (cleaved). Naturally, such voids will remain between each of the die bond films that have been individualized (cleaved) in the laser cutting process (4) above and one side of each of the multiple semiconductor chips. That is, each of the plurality of individual semiconductor chips with the die bond film has a void.

[0007] Here, in addition to air, moisture in the air is also present in the voids, so if the semiconductor chip with the singulated die-bond film has voids as described above, the amount of moisture present in the semiconductor package including the semiconductor chip with the singulated die-bond film will be large. In such a case, during soldering at a predetermined temperature (e.g., 260°C) to electrically connect the semiconductor package to the motherboard, the degree of volumetric expansion due to evaporation of the moisture in the semiconductor package increases, and this large volumetric expansion causes a large increase in pressure inside the semiconductor package. As a result, there is a risk that a phenomenon (so-called popcorn phenomenon) will occur in which the semiconductor package is destroyed by this large pressure rise, which is undesirable.

[0008] The above-mentioned pick-up step (5) is carried out by, for example, pushing up the semiconductor chips with the singulated die bond film from the base layer side of the dicing die bond film with a push-up member such as a pin member, and then holding the pushed-up semiconductor chips with the singulated die bond film with a suction jig. In this pick-up step, in order to efficiently collect each of the semiconductor chips with the singulated die bond film, the dicing die bond film is stretched to leave a gap between adjacent semiconductor chips with the singulated die bond film, and then the push-up is carried out by the push-up member. However, when the dicing die bond film is stretched, the base layer of the dicing die bond film may be torn.

[0009] However, it cannot be said that sufficient research has yet been conducted into solving both the problems of preventing voids from occurring between the semiconductor chip and the die bond film during the mounting process and preventing cracks from occurring in the base layer of the dicing die bond film during the pick-up process.

[0010] Therefore, an object of the present invention is to provide a die bond film that can suppress the occurrence of voids between the semiconductor chip and the die bond film during the mounting process, and to suppress the occurrence of cracks in the base material layer of the dicing die bond film during the pick-up process, and a dicing die bond film that includes the die bond film. [Means for solving the problem]

[0011] As a result of extensive research, the present inventors have found that, in a die bond film containing a thermoplastic resin as an organic component, the thermoplastic resin contains an acrylic polymer having a mass average molecular weight of 80,000 or less, and the melt viscosity at 80°C is 30 kPa s or less, thereby both of the above two problems can be solved. As a result, the present invention was achieved.

[0012] That is, the die bond film according to the present invention is A die bond film containing a thermoplastic resin as an organic component, The thermoplastic resin contains an acrylic polymer having a mass average molecular weight of 80,000 or less, The melt viscosity at 80°C is 30 kPa s or less.

[0013] In addition, the dicing die bond film according to the present invention is a dicing tape having a pressure-sensitive adhesive layer laminated on a base layer; A die bond film laminated on the pressure-sensitive adhesive layer of the dicing tape, The die-bonding film is the above-mentioned die-bonding film. Effect of the Invention

[0014] According to the present invention, it is possible to provide a die bond film that can suppress the occurrence of voids between the semiconductor chip and the die bond film during the mounting process, and also suppress the occurrence of cracks in the base layer of the dicing die bond film during the pick-up process. Also, it is possible to provide a dicing die bond film having the above-mentioned die bond film. [Brief description of the drawings]

[0015] [Figure 1]FIG. 1 is a perspective view showing a configuration of a die bond film according to an embodiment of the present invention. [Diagram 2] FIG. 2 is a cross-sectional view for explaining an example of use of the die bond film according to one embodiment of the present invention. [Diagram 3] FIG. 1 is a cross-sectional view showing a configuration of a dicing die-bonding film having a die-bonding film according to one embodiment of the present invention. [Figure 4A] 1A to 1C are cross-sectional views each showing a schematic view of a half-cut process in a manufacturing method of a semiconductor integrated circuit. [Figure 4B] 1A to 1C are cross-sectional views each showing a schematic view of a half-cut process in a manufacturing method of a semiconductor integrated circuit. [Figure 4C] 1A to 1C are cross-sectional views each showing a schematic diagram of a back grinding process in a manufacturing method of a semiconductor integrated circuit. [Figure 4D] 1A to 1C are cross-sectional views each showing a schematic diagram of a back grinding process in a manufacturing method of a semiconductor integrated circuit. [Figure 5A] 1A to 1C are cross-sectional views each showing a schematic view of a mounting step in a manufacturing method of a semiconductor integrated circuit. [Figure 5B] 1A to 1C are cross-sectional views each showing a schematic view of a mounting step in a manufacturing method of a semiconductor integrated circuit. [Figure 6] 1A to 1C are cross-sectional views each showing a schematic diagram of a laser cutting step in a manufacturing method for a semiconductor integrated circuit. [Figure 7] 1A to 1C are cross-sectional views each showing a pickup step in a method for manufacturing a semiconductor integrated circuit. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0016] Hereinafter, one embodiment of the present invention will be described.

[0017] [Die bond film] The die-bonding film 10 according to this embodiment (see FIG. 1) contains a thermoplastic resin as an organic component. Moreover, in the die-bonding film 10 according to this embodiment, the thermoplastic resin contains an acrylic polymer having a mass average molecular weight Mw of 80,000 or less. Furthermore, the die bond film 10 according to this embodiment has a melt viscosity at 80° C. of 30 kPa·s or less. The die bond film 10 according to this embodiment is usually in the form of a long strip and is stored in a state where it is wound into a cylindrical shape, that is, in a rolled state.

[0018] The mass average molecular weight Mw of the acrylic polymer is preferably 75,000 or less, more preferably 70,000 or less, more preferably 65,000 or less, and even more preferably 55,000 or less. The mass average molecular weight Mw of the acrylic polymer is preferably 5,000 or more, more preferably 8,000 or more, and even more preferably 10,000 or more. Furthermore, the mass average molecular weight Mw of the acrylic polymer may be 20,000 or more, 25,000 or more, or 30,000 or more.

[0019] The mass average molecular weight Mw of the acrylic polymer can be measured by GPC under the following conditions. Measuring device: Waster, model "Alliance GPC 2000" Column: Two TSKgel GMH6-HT (Tosoh Corporation) columns connected in series, with two TSKgel GMH-HTL columns connected in series downstream. Column size: Both TSKgel GMH6-HT and TSKgel GMH-HTL are 7.5mm inner diameter x 300mm length Column temperature: 140℃ ·Flow rate: 1.0mL / min Eluent: o-dichlorobenzene Sample preparation concentration: 0.10% by mass (dissolved in o-dichlorobenzene) Sample injection volume: 40μL Detector: RI (differential refractometer) Standard sample: polystyrene

[0020] The melt viscosity at 80° C. is preferably 25 kPa·s or less, more preferably 20 kPa·s or less, and even more preferably 15 kPa·s or less. The melt viscosity at 80° C. may be 10 kPa·s or less, or may be 5.0 kPa·s. Furthermore, the melt viscosity at 80° C. is preferably 0.1 kPa·s or more, more preferably 0.5 kPa·s or more, and even more preferably 1.0 kPa·s or more. In addition, the melt viscosity at 80° C. may be 2.0 kPa·s or more, 3.0 kPa·s or more, or 4.0 kPa·s or more.

[0021] The melt viscosity at 80° C. can be measured by a parallel plate method using a rheometer ("HAAKE MARSIII" manufactured by Themo Fisher Scientific). Specifically, the measurement can be performed according to the following procedure. (1) A test piece is sandwiched between a hot plate for heating and a parallel plate (diameter 8 mm) arranged parallel to the hot plate. The test piece is a die bond film with a thickness of 300 μm punched into a circular shape with a punch of 8 mmφ. The gap between the plates is 250 μm. (2) The melt viscosity of the test piece at 80°C is measured under conditions of a heating rate of 10°C / min, a frequency of 1 Hz, a strain value of 5%, and a temperature range of 50 to 90°C. Specifically, the melt viscosity at 80°C is determined by reading the value at 80°C.

[0022] As shown in FIG. 2, the die bond film 10 according to this embodiment is used for attaching (die bonding) a semiconductor chip (die) 20 onto an adherend 30 such as a wiring board or a lead frame. Specifically, the die bond film 10 according to this embodiment is used in such a manner that the other surface 10B is attached onto an adherend 30 in a state in which the semiconductor chip 20 is attached to one surface 10A. The wiring board may be a board in which wiring is formed on a glass epoxy resin plate, or a board in which wiring is formed on a silicon plate. The lead frame may be a silver plated copper lead frame. The adherend 30 is not limited to the wiring board or lead frame, but may be anything that has a conductive member on a support for establishing electrical continuity with the outside.

[0023] As described above, the die bond film 10 according to the present embodiment contains a thermoplastic resin as an organic component. The thermoplastic resin contains an acrylic polymer having a mass average molecular weight Mw of 80,000 or less. Furthermore, the mass proportion of the acrylic polymer having a mass average molecular weight Mw of 80,000 or less in the total mass of the thermoplastic resin is preferably 70 mass% or more, more preferably 80 mass% or more, and even more preferably 90 mass% or more. The mass ratio of the acrylic polymer having a mass average molecular weight Mw of 80,000 or less to the total mass of the thermoplastic resin may be 100 mass %, that is, all of the thermoplastic resin may be an acrylic polymer having a mass average molecular weight Mw of 80,000 or less. The acrylic polymer has properties of being low in ionic impurities and having high heat resistance. Therefore, by including the acrylic polymer in the die bond film 10, the die bond film 10 can exhibit sufficient connection reliability with respect to adherends such as the semiconductor chip 20, the wiring board, and the lead frame. The acrylic polymer also functions as a binder.

[0024] The acrylic polymer is preferably a polymer containing a monomer unit derived from a (meth)acrylic acid ester as the monomer unit having the largest mass ratio. In this specification, the term "(meth)acrylic acid" includes both "acrylic acid" and "methacrylic acid". Examples of the (meth)acrylic acid ester include (meth)acrylic acid alkyl ester, (meth)acrylic acid cycloalkyl ester, and (meth)acrylic acid aryl ester. The acrylic polymer may contain monomer units derived from other components copolymerizable with (meth)acrylic acid esters, such as carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, functional group-containing monomers such as acrylamide and acrylonitrile, and various polyfunctional monomers. The acrylic polymers may be used alone or in combination of two or more.

[0025] The acrylic polymer having a mass average molecular weight Mw of 80,000 or less preferably contains acrylonitrile (AN) as a monomer unit constituting the polymer. The acrylic polymer may contain, as the monomer units, 10 mol % or more of acrylonitrile (AN), or 15 mol % or more of acrylonitrile (AN). The acrylic polymer may contain 90 mol % or less, 80 mol % or less, or 70 mol % or less of acrylonitrile (AN) as the monomer unit. The acrylic polymer may contain, as a monomer unit other than the acrylonitrile (AN), acrylic acid (AA), ethyl acrylate (EA), butyl acrylate (BA), 2-ethylhexyl acrylate (HA or 2EHA), ethylene methyl acrylate (EMA), methyl methacrylate (MMA), butyl methacrylate (BMA), styrene monomer (ST), glycidyl methacrylate (GMA), or the like. The acrylic polymer may be a copolymer in which the acrylonitrile (AN), the ethyl acrylate (EA), the butyl acrylate (BA), and the acrylic acid (AA) are copolymerized. In addition, when the acrylic polymer is a copolymer of the acrylonitrile (AN), the ethyl acrylate (EA), the butyl acrylate (BA), and the acrylic acid (AA), the acrylic polymer may contain 15 mol % or more and 50 mol % or less of the acrylonitrile (AN), 5 mol % or more and 60 mol % or less of the ethyl acrylate (EA), 5 mol % or more and 60 mol % or less of the butyl acrylate (BA), and 0.01 mol % or more and 10 mol % or less of the acrylic acid (AA).

[0026] In the die-bonding film 10 according to this embodiment, the mass proportion of the acrylic polymer having a mass average molecular weight Mw of 80,000 or less in the total mass of the organic components may be 10 mass% or more, 15 mass% or more, 20 mass% or more, or 25 mass% or more. The mass proportion of the acrylic polymer having a mass average molecular weight Mw of 80,000 or less in the total mass of the organic components may be 50 mass% or less, 40 mass% or less, or 35 mass% or less.

[0027] The die bond film 10 according to the present embodiment may contain a thermoplastic resin other than the acrylic polymer. Examples of thermoplastic resins other than the acrylic polymers include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as polyamide 6 and polyamide 6,6, phenoxy resin, acrylic polymer, saturated polyester resin such as PET and PBT, polyamideimide resin, and fluororesin. The thermoplastic resins may be used alone or in combination of two or more.

[0028] The die bond film 10 according to the present embodiment may contain a thermosetting resin as the organic component. The die bond film 10 according to this embodiment exhibits a thermosetting property by containing the thermosetting resin.

[0029] In the die bond film 10 according to this embodiment, the mass proportion of the thermosetting resin in the total mass of the organic components may be 50 mass% or more, 60 mass% or more, or 65 mass% or more. The mass proportion of the thermosetting resin in the total mass of the organic components may be 90 mass% or less, 85 mass% or less, 80 mass% or less, or 75 mass% or less.

[0030] Examples of the thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. Among these, it is preferable to use at least one of the epoxy resin and the phenol resin as the thermosetting resin, and it is more preferable to use both the epoxy resin and the phenol resin. That is, the die bond film 10 according to the present embodiment preferably contains the epoxy resin and the phenol resin as the thermosetting resin.

[0031] Examples of the epoxy resin include bisphenol A type epoxy resins, bisphenol F type epoxy resins, bisphenol S type epoxy resins, brominated bisphenol A type epoxy resins, hydrogenated bisphenol A type epoxy resins, bisphenol AF type epoxy resins, biphenyl type epoxy resins, naphthalene type epoxy resins, novolac type epoxy resins, fluorene type epoxy resins, trishydroxyphenylmethane type epoxy resins, tetraphenylolethane type epoxy resins, hydantoin type epoxy resins, trisglycidyl isocyanurate type epoxy resins, and glycidylamine type epoxy resins. Examples of the novolac type epoxy resin include phenol novolac type epoxy resin and orthocresol novolac type epoxy resin. The naphthalene type epoxy resin is an epoxy resin having a naphthalene skeleton in its structure. The epoxy resins may be used alone or in combination of two or more.

[0032] Among the various epoxy resins described above, it is preferable to use the naphthalene type epoxy resin or the novolac type epoxy resin, and it is particularly preferable to use the novolac type epoxy resin. The novolac type epoxy resin has a large number of functional groups (glycidyl groups) per molecule, and therefore has a smaller epoxy equivalent value than other epoxy resins. Therefore, the cured product of the novolac type epoxy resin has a higher crosslink density than the cured products of other epoxy resins, and can therefore exhibit excellent heat resistance. For this reason, the mass proportion of the novolac epoxy resin in the total mass of the organic component and the inorganic component may be 30 mass % or more and 40 mass % or less.

[0033] The epoxy resin may have a softening point of 120° C. or less, may have a softening point of 100° C. or less, may have a softening point of 85° C. or less, or may have a softening point of 80° C. or less. The epoxy resin may be liquid at room temperature and may have a softening point of 40° C. or higher. The softening point of the epoxy resin can be determined by the ring and ball method defined in JIS K 6910-2007.

[0034] The epoxy resin may have an epoxy equivalent of 80 g / eq or more, may have an epoxy equivalent of 100 g / eq or more, or may have an epoxy equivalent of 120 g / eq or more. In addition, the epoxy resin may have an epoxy equivalent of 400 g / eq or less, may have an epoxy equivalent of 200 g / eq or less, or may have an epoxy equivalent of 170 g / eq or less. The epoxy equivalent of the epoxy resin can be determined in accordance with JIS K 7236:2009.

[0035] Examples of the phenol resin include novolac type phenol resin, resol type phenol resin, cresol novolac type phenol resin, triphenylmethane skeleton-containing phenol resin, biphenyl skeleton-containing phenol resin, naphthalene skeleton-containing phenol resin, and polyoxystyrene such as polyparaoxystyrene. The phenol resins may be used alone or in combination of two or more. When the phenol resin is used in combination with the epoxy resin, the phenol resin also functions as a curing agent for the epoxy resin.

[0036] The phenol resin may have a softening point of 120° C. or less, may have a softening point of 100° C. or less, or may have a softening point of 90° C. or less. The phenol resin may be liquid at room temperature and may have a softening point of 40° C. or higher. The softening point of the phenol resin can be determined by the ring and ball method defined in JIS K 6910-2007.

[0037] The phenol resin may have a hydroxyl equivalent of 70 g / eq or more, may have a hydroxyl equivalent of 90 g / eq or more, or may have a hydroxyl equivalent of 100 g / eq or more. In addition, the phenol resin may have a hydroxyl equivalent of 400 g / eq or less, may have a hydroxyl equivalent of 200 g / eq or less, or may have a hydroxyl equivalent of 150 g / eq or less. The hydroxyl equivalent of the phenol resin can be determined in accordance with JIS K 0070:1992.

[0038] When the epoxy resin and the phenol resin are used in combination, the mass proportion of the epoxy resin in the total amount of the epoxy resin and the phenol resin is preferably 40 mass% or more, more preferably 50 mass% or more, and even more preferably 60 mass% or more. In addition, the mass ratio of the epoxy resin to the total amount of the epoxy resin and the phenol resin is preferably 80 mass % or less, and more preferably 70 mass % or less.

[0039] The die bond film 10 according to this embodiment may contain a crosslinking agent (thermosetting catalyst) from the viewpoint of sufficiently progressing the curing reaction of the thermosetting resin and increasing the curing reaction rate. Examples of the crosslinking agent include imidazole-based compounds, triphenylphosphine-based compounds, amine-based compounds, and trihalogen borane-based compounds.

[0040] The die bond film 10 according to the present embodiment may contain an inorganic filler as an inorganic component. Examples of the inorganic filler include fillers containing aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, boron nitride, silica such as crystalline silica and amorphous silica, and the like. Examples of the material for the inorganic filler include simple metals such as aluminum, gold, silver, and nickel, and alloys. The inorganic filler may be aluminum borate whiskers, amorphous carbon black, graphite, carbon nanotubes, and the like. That is, examples of the inorganic filler include oxide fillers, nitride fillers, silicate fillers, carbide fillers, hydroxide fillers, carbonate fillers, sulfate fillers, and metal fillers. Among the above-mentioned various fillers, it is preferable to use a silica filler composed of silica. The silica filler may be one whose surface has been treated with a silane coupling agent such as epoxy silane. The inorganic filler may have various shapes such as a spherical shape, a needle shape, a flake shape, and the like. Among these various shapes, a spherical shape is preferred. The inorganic fillers may be used alone or in combination of two or more.

[0041] In the die bond film 10, the mass proportion of the inorganic filler to the total mass of the organic components and the inorganic components may be 5 mass% or more, 7 mass% or more, 10 mass% or more, or 12 mass% or more. Furthermore, the mass proportion of the inorganic filler to the total mass of the organic components and the inorganic components may be 30 mass% or less, 25 mass% or less, 20 mass% or less, or 18 mass% or less. When the mass ratio of the inorganic filler is within the above numerical range, the shape retention of the die bond film 10 can be ensured, and in addition, the die bond film 10 can have an appropriate melt viscosity. Furthermore, since the die bond film 10 has an appropriate melt viscosity, when another semiconductor chip is embedded in the die bond film 10 while the die bond film 10 is attached to one semiconductor chip, this embedding can be easily performed. Furthermore, when the die bond film 10 with a semiconductor chip attached thereto is attached to a circuit board having irregularities, the irregularities can be easily filled by the die bond film 10 .

[0042] The average particle size of the inorganic filler is preferably 0.005 μm (5 nm) or more and 10 μm (10,000 nm) or less, more preferably 0.005 μm (5 nm) or more and 1 μm (1,000 nm) or less, more preferably 0.01 μm (10 nm) or more and 0.3 μm (300 nm) or less, and even more preferably 0.015 μm (15 nm) or more and 0.1 μm (100 nm) or less. When the inorganic filler has an average particle size of 0.005 μm or more, the wettability and adhesiveness to adherends such as semiconductor wafers and semiconductor chips can be further improved. Furthermore, by making the average particle diameter of the inorganic filler 10 μm or less, the properties of the contained filler can be exhibited more fully, and in addition, the heat resistance of the die bond film 10 can be further exhibited.

[0043] The average particle size of the inorganic filler can be measured by dynamic light scattering (DLS). Specifically, the inorganic filler is dispersed in methyl ethyl ketone (MEK) so that the solid content concentration is 1 mass% or less to prepare a sample for particle size measurement, and the average particle size of the inorganic filler in the sample for particle size measurement is measured using a dynamic light scattering photometer (model number "ZEN3600": Sysmex Corporation). The sample for particle size measurement may be treated with an ultrasonic homogenizer for 2 minutes before measurement.

[0044] The die bond film 10 according to the present embodiment may contain two or more kinds of inorganic fillers having different average particle sizes. The two or more kinds of inorganic fillers may have different particle types or different particle shapes.

[0045] The thickness of the die bond film 10 is not particularly limited, but is, for example, 1 μm or more and 200 μm or less. Such a thickness may be 3 μm or more and 150 μm or less, or 5 μm or more and 100 μm or less. The thickness of the die bond film 10 can be determined, for example, by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses.

[0046] The die bond film 10 can be obtained by dissolving or suspending a resin composition containing the above-mentioned components in an organic solvent (e.g., methyl ethyl ketone (MEK)) to obtain an adhesive composition, applying the adhesive composition to the surface of a resin film or the like using an applicator or the like, and then drying the adhesive composition after application. The resin film is preferably a release film (release liner) having one surface subjected to a release treatment. When the release film is used as the resin film, it is preferable to apply the adhesive composition to the release-treated surface.

[0047] [Dicing die bond film] As shown in FIG. 3, the dicing die bond film 50 of this embodiment comprises a dicing tape 40 in which an adhesive layer 2 is laminated on a base layer 1, and a die bond film 10 laminated on the adhesive layer 2 with a portion of the adhesive layer 2 exposed. In the dicing die bond film 50 according to this embodiment, as the die bond film 10, the die bond film 10 according to this embodiment is used. In the dicing die bond film 50, a semiconductor wafer is attached onto the die bond film 10. When a semiconductor wafer is cut using the dicing die bond film 50, the die bond film 10 is cut together with the semiconductor wafer. The die bond film 10 is cut into pieces of a size corresponding to the size of each of the individual semiconductor chips, as shown in Fig. 2. This allows semiconductor chips with the die bond film 10 to be obtained.

[0048] The base layer 1 supports the pressure-sensitive adhesive layer 2 . The base layer 1 is made of a metal foil, a fiber sheet, a rubber sheet, a resin film, or the like.

[0049] The base layer 1 is preferably made of a resin film. The substrate layer 1 may have a single-layer structure or a multilayer structure.

[0050] The fiber sheet may be made of paper, woven fabric, or nonwoven fabric.

[0051] Examples of materials for the resin film include polyolefins such as polyethylene, polypropylene, and ethylene-propylene copolymers; ethylene copolymers such as ethylene-vinyl acetate copolymers, ionomer resins, ethylene-(meth)acrylic acid copolymers, ethylene-(meth)acrylic acid ester random copolymers, and ethylene-(meth)acrylic acid ester alternating copolymers; polyesters such as polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate; polyacrylates; polyvinyl chloride (PVC); polyurethanes; polycarbonates; polyphenylene sulfide; polyamides such as aliphatic polyamides and fully aromatic polyamides (aramids); polyether ether ketones; polyimides; polyetherimides; polyvinylidene chloride; ABS (acrylonitrile-butadiene-styrene copolymers); cellulose or cellulose derivatives; silicone-containing polymers; and fluorine-containing polymers. These may be used alone or in combination of two or more.

[0052] When the base layer 1 is made of a resin film, the base layer 1 may be obtained by non-stretch molding or by stretch molding, but is preferably obtained by stretch molding.

[0053] The surface of the base layer 1 on which the pressure-sensitive adhesive layer 2 is laminated (hereinafter also simply referred to as the surface) may be subjected to a surface treatment in order to enhance adhesion to the pressure-sensitive adhesive layer 2. The surface treatment may be a chemical or physical oxidation treatment such as corona treatment, plasma treatment, chromic acid treatment, ozone exposure, flame exposure, high-voltage shock exposure, or ionizing radiation treatment. Furthermore, as a surface treatment, a coating treatment using a coating agent such as an anchor coating agent, a primer, or an adhesive may be performed.

[0054] The surface of the base layer 1 on which the pressure-sensitive adhesive layer 2 is not laminated (hereinafter also simply referred to as the back surface) may be coated with a release agent (peeling agent) such as a silicone resin or a fluororesin in order to improve releasability. Either the front surface or the back surface of the base layer 1, or both the front surface and the back surface, may be subjected to an antistatic treatment.

[0055] The thickness of the base layer 1 is preferably 55 μm or more and 195 μm or less, more preferably 55 μm or more and 190 μm or less, even more preferably 55 μm or more and 170 μm or less, even more preferably 60 μm or more and 160 μm or less, and optimally 70 μm or more and 120 μm or less. By setting the thickness of the base layer 1 within the above range, the dicing tape 40 can be efficiently manufactured. Moreover, the die bond film 10 of the dicing die bond film 50 can be efficiently cut. The thickness of the base layer 1 can be determined, for example, by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses.

[0056] In the dicing die bond film 50 according to this embodiment, the pressure-sensitive adhesive layer 2 has adhesiveness and holds the die bond film 10 by adhering it thereto. In order to exhibit the above-mentioned adhesive properties, the adhesive layer 2 contains an adhesive.

[0057] The adhesive may be one whose adhesive strength can be reduced by an external action during the use of the dicing die bond film 50 (hereinafter, referred to as an adhesive reduction type adhesive).

[0058] When a reduced-adhesion adhesive is used as the adhesive, the adhesive layer 2 can be used in a state where it exhibits a relatively high adhesive strength (hereinafter referred to as a high-adhesion state) and a state where it exhibits a relatively low adhesive strength (hereinafter referred to as a low-adhesion state) during the use of the dicing die bond film 50. For example, when a semiconductor wafer attached to the die bond film 10 of the dicing die bond film 50 is subjected to cutting, the high-adhesion state is used to prevent the semiconductor chips separated by cutting the semiconductor wafer from lifting up or peeling off from the adhesive layer 2. On the other hand, in order to pick up a plurality of individual semiconductor chips after the semiconductor wafer is cleaved, the low adhesive state is utilized to facilitate picking up the plurality of semiconductor chips from the adhesive layer 2 .

[0059] The reduced adhesion type adhesive may be, for example, an adhesive that can be cured by irradiation with active energy rays during use of the dicing die bond film 50 (hereinafter, referred to as an active energy ray curable adhesive). That is, the tack-reducing pressure-sensitive adhesive contains a curing component that is cured by irradiation with active energy rays.

[0060] Examples of the active energy ray-curable adhesive include adhesives that are cured by irradiation with electron beams, ultraviolet rays, α rays, β rays, γ rays, or X-rays. Among these, it is preferable to use an adhesive that is cured by irradiation with ultraviolet rays (ultraviolet ray-curable adhesive).

[0061] Examples of the active energy ray-curable adhesive include additive-type active energy ray-curable adhesives that contain a base polymer as a main component and an active energy ray-polymerizable monomer component or an active energy ray-polymerizable oligomer component having a functional group such as an active energy ray-polymerizable carbon-carbon double bond. As the base polymer, an acrylic polymer is preferably used. The base polymer may be one that reduces the adhesive strength of the pressure-sensitive adhesive layer 2 by being polymerized and cured by irradiation with active energy rays.

[0062] The acrylic polymer includes a monomer unit derived from a (meth)acrylic acid ester, such as an alkyl (meth)acrylate, a cycloalkyl (meth)acrylate, or an aryl (meth)acrylate. As the monomer unit derived from the (meth)acrylic acid ester, for example, 2-hydroxyethyl acrylate (HEA), ethyl acrylate (EA), butyl acrylate (BA), 2-ethylhexyl acrylate (2EHA), isononyl acrylate (iNA), lauryl acrylate (LA), 4-acryloylmorpholine (AMCO), 2-isocyanatoethyl methacrylate (MOI), etc. are preferably used. The monomer units derived from the (meth)acrylic acid ester may be used alone or in combination of two or more kinds. The acrylic polymer preferably contains, as monomer units derived from the (meth)acrylic acid ester, the 2-ethylhexyl acrylate (2EHA), the 2-hydroxyethyl acrylate (HEA), and the 2-isocyanatoethyl methacrylate (MOI). Furthermore, the acrylic polymer may contain, as monomer units derived from the (meth)acrylic acid ester, the lauryl acrylate (LA) and the isononyl acrylate (iNA), in addition to the 2EHA, the HEA, and the MOI.

[0063] The pressure-sensitive adhesive layer 2 may contain an external crosslinking agent. As the external crosslinking agent, any agent can be used as long as it can react with the base polymer (for example, an acrylic polymer) to form a crosslinked structure. Examples of such external crosslinking agents include polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine-based crosslinking agents.

[0064] Examples of the active energy ray polymerizable monomer component include urethane (meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and 1,4-butanediol di(meth)acrylate. Examples of the active energy ray-polymerizable oligomer component include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, polybutadiene-based, etc. The content ratio of the active energy ray-polymerizable monomer component or active energy ray-polymerizable oligomer component in the active energy ray-curable adhesive is selected within a range that appropriately reduces the adhesiveness of the adhesive layer 2.

[0065] The active energy ray-curable adhesive preferably contains a photopolymerization initiator, such as an azo compound, an α-ketol compound, an acetophenone compound, a benzoin ether compound, a ketal compound, an aromatic sulfonyl chloride compound, a photoactive oxime compound, a benzophenone compound, a thioxanthone compound, a camphorquinone, a halogenated ketone, an acylphosphinoxide, and an acylphosphonate. An example of the azo compound is azobisisobutyronitrile (AIBN).

[0066] When the pressure-sensitive adhesive layer 2 contains an external crosslinking agent, the pressure-sensitive adhesive layer 2 preferably contains the external crosslinking agent in an amount of 0.1 parts by mass or more and 3 parts by mass or less. When the pressure-sensitive adhesive layer 2 contains a photopolymerization initiator, the pressure-sensitive adhesive layer 2 preferably contains 0.1 parts by mass or more and 10 parts by mass or less of the photopolymerization initiator.

[0067] The pressure-sensitive adhesive layer 2 may contain, in addition to the above-mentioned components, a crosslinking accelerator, a tackifier, an antiaging agent, a colorant such as a pigment or a dye, and the like.

[0068] The thickness of the pressure-sensitive adhesive layer 2 is preferably from 1 μm to 50 μm, more preferably from 1 μm to 30 μm, further preferably from 2 μm to 25 μm, and particularly preferably from 3 μm to 12 μm. The thickness of the adhesive layer 2 can be determined, for example, by measuring the thickness at five randomly selected points using a dial gauge (manufactured by PEACOCK, model R-205) and calculating the arithmetic average of these thicknesses.

[0069] The adhesive layer 2 can be obtained by applying an adhesive composition containing the above-mentioned components to the surface of a resin film or the like using an applicator or the like, and then drying the applied adhesive composition.

[0070] Moreover, the attachment of the die-bonding film 10 to the pressure-sensitive adhesive layer 2 can be carried out by laminating the die-bonding film 10 on the pressure-sensitive adhesive layer 2 prepared as described above. When the die-bonding film 10 in a state where it is bonded to the resin film is laminated on the pressure-sensitive adhesive layer 2, the resin film may be peeled off from one surface of the die-bonding film 10 after lamination.

[0071] The dicing die bond film 50 according to this embodiment is used, for example, as an auxiliary tool for manufacturing a semiconductor integrated circuit. A specific example of the use of the dicing die bond film 50 will be described below.

[0072] The dicing die bond film 50 according to this embodiment is used, for example, as an auxiliary tool for manufacturing a semiconductor integrated circuit. A specific example of the use of the dicing die bond film 50 will be described below. In the following, an example will be described in which a dicing die bond film 50 having a single base layer 1 is used.

[0073] The method for manufacturing a semiconductor integrated circuit includes a half-cut process in which a groove is formed in the semiconductor wafer to process the semiconductor wafer into a chip (die) by a cleaving process, a back-grind process in which the semiconductor wafer after the half-cut process is ground to reduce its thickness, a mounting process in which one side (for example, the side opposite to the circuit side) of the semiconductor wafer after the back-grind process is attached to the die-bonding film 10 and the semiconductor wafer is fixed to the dicing tape 40, a laser cutting process in which a laser is irradiated to the semiconductor wafer after the mounting process to separate (cleave) the die-bonding film 10, a pick-up process in which the die-bonding film 10 and the adhesive layer 2 are peeled off to take out the semiconductor chip (die) with the die-bonding film 10 attached, and a die-bonding process in which the semiconductor chip (die) with the die-bonding film 10 attached is bonded to an adherend. When these processes are carried out, the dicing tape (dicing die-bonding film) of this embodiment is used as a manufacturing auxiliary tool.

[0074] In the half-cut process, as shown in FIG. 4A and FIG. 4B, a half-cut process is performed to cut a semiconductor integrated circuit into small pieces (dies). More specifically, a wafer processing tape T is attached to the surface opposite to the circuit surface of the semiconductor wafer W (see FIG. 4A). A dicing ring R is attached to the wafer processing tape T (see FIG. 4A). With the wafer processing tape T attached, a groove for division is formed (see FIG. 4B). In the back-grind process, as shown in FIG. 4C and FIG. 4D, the semiconductor wafer is ground to reduce its thickness. More specifically, a back-grind tape G is attached to the surface where the groove is formed, while the wafer processing tape T attached initially is peeled off (see FIG. 4C). With the back-grind tape G attached, the semiconductor wafer W is ground until it reaches a predetermined thickness (see FIG. 4D).

[0075] 5A and 5B, in the mounting process, after a dicing ring R is attached to the adhesive layer 2 of the dicing tape 40, a half-cut semiconductor wafer W is attached to the exposed surface of the die bond film 10 (see FIG. 5A). Then, the backgrind tape G is peeled off from the semiconductor wafer W (see FIG. 5B).

[0076] In the laser cutting process, as shown in FIG. 6, a laser light source LS is used to irradiate laser light from the semiconductor wafer W side onto the die bond film 10, and the die bond film 10 is divided (cut) into individual pieces by the laser light. In the half-cut process, the semiconductor wafer W is divided (cut) into a plurality of semiconductor chips 20, and grooves are formed between adjacent semiconductor chips 20. Therefore, the laser light irradiated from the laser light source LS reaches the die bond film 10 through these grooves. As a result, the die bond film 10 is divided (cut) into a plurality of small pieces. Since the semiconductor wafer W is diced (cut) into a plurality of semiconductor chips 20 in a matrix, the laser light source LS is arranged movably so that it can irradiate laser light onto all of the grooves in the matrix. Moreover, the laser light is irradiated with an intensity that does not cut the base layer 1 of the dicing tape 40 excessively, in other words, with an intensity that does not leave excessive laser marks on the base layer 1.

[0077] 7, in the pick-up process, the semiconductor chip 20 with the die bond film 10 attached thereto is peeled off from the adhesive layer 2 of the dicing tape 40. In detail, the pin member P is raised to push up the semiconductor chip 20 to be picked up through the dicing tape 40. The pushed-up semiconductor chip 20 is held by the suction jig J.

[0078] In the pick-up process, in order to efficiently collect the individual semiconductor chips 20, the dicing die bond film 50 is stretched to space the adjacent semiconductor chips 20 from each other, and then the pin members P push up the dicing die bond film 50. Since the dicing die bond film 50 according to the present embodiment includes the die bond film 10 configured as described above, it is possible to prevent deep laser marks from being formed on the base layer 1 of the dicing die bond film 50 in the laser cutting process. Therefore, as described above, it is possible to prevent the base layer 1 from being torn when the dicing die bond film 50 is stretched.

[0079] In the die bonding step, the semiconductor chip 20 with the die bond film 10 attached thereto is bonded to an adherend.

[0080] The matters disclosed in this specification include the following.

[0081] (1) A die bond film containing a thermoplastic resin as an organic component, The thermoplastic resin contains an acrylic polymer having a mass average molecular weight of 80,000 or less, The melt viscosity at 80°C is 30 kPa·s or less. Die bond film.

[0082] (2) The inorganic component further includes an inorganic filler, The mass ratio of the inorganic filler to the total mass of the organic component and the inorganic component is 25 mass% or more. The die bond film according to (1) above.

[0083] (3) The organic component further includes a thermosetting resin, The thermosetting resin includes a novolac type epoxy resin. The die-bonding film according to (1) or (2) above.

[0084] (4) The softening point of the novolac epoxy resin is 85° C. or lower. The die bond film according to (3) above.

[0085] (5) It contains inorganic filler as an inorganic component, a mass ratio of the novolac epoxy resin to the total mass of the organic component and the inorganic component is 30 mass% or more; The die-bonding film according to (3) or (4) above.

[0086] (6) a dicing tape having a pressure-sensitive adhesive layer laminated on a base layer; and a die bond film laminated on the pressure-sensitive adhesive layer of the dicing tape, The die-bonding film is any one of the die-bonding films (1) to (5) above. Dicing die bond film.

[0087] The die bond film and dicing die bond film according to the present invention are not limited to the above-mentioned embodiment. The die bond film and dicing die bond film according to the present invention are not limited by the above-mentioned action and effect. The die bond film and dicing die bond film according to the present invention can be modified in various ways without departing from the gist of the present invention. EXAMPLES

[0088] The present invention will now be described in more detail with reference to examples. The following examples are provided to further explain the present invention in detail, but are not intended to limit the scope of the present invention.

[0089] [Example 1] (Die bond film) According to the compounding ratios shown in Table 1A below, the organic components (1 part acrylic polymer, 1 part epoxy resin, 1 part phenolic resin, 1 part silane coupling agent, 1 part organic dye, and 1 part crosslinking agent) and the inorganic components (1 part inorganic filler) were suspended and dissolved in methyl ethyl ketone (MEK) to obtain an adhesive composition. The solid content of the adhesive composition was appropriately adjusted to a range of 30% by mass to 50% by mass so as to facilitate the formation of a coating film. Next, the adhesive composition was applied to the silicone release treated surface of a PET separator (thickness 50 μm) using an applicator to form a coating film, and the coating film was subjected to a solvent removal treatment at 120° C. for 2 minutes. Then, a die bond film was formed on the PET separator with a predetermined thickness. Specifically, a die bond film with a thickness of 2 μm (average thickness) and a die bond film with a thickness of 20 μm (average thickness) were formed, respectively. Furthermore, in order to cover each die bond film, a PET separator (thickness 25 μm) was attached to each die bond film.

[0090] (Dicing tape) Into a reaction vessel equipped with a cooling tube, a nitrogen inlet tube, a thermometer, and a stirrer, 35 parts by mass of 2-hydroxyethyl acrylate (hereinafter referred to as HEA) and 65 parts by mass of isononyl acrylate (hereinafter referred to as INA) as monomers, and 0.2 parts by mass of azobisisobutyronitrile (hereinafter referred to as AIBN) as a thermal polymerization initiator were added, and ethyl acetate was further added as a reaction solvent so that the concentration of the monomers became 35% by mass. After that, polymerization treatment was carried out under a nitrogen stream at 62°C for 3 hours, and then at 75°C for 4 hours, to obtain an acrylic polymer intermediate. To the solution containing this acrylic polymer intermediate, 2-methacryloyloxyethyl isocyanate (hereinafter referred to as MOI) was added so that the amount of MOI was 32 moles per 100 moles of the total monomers mixed during polymerization. In addition, 0.5 mass% of dibutyltin dilaurate was added as a reaction catalyst relative to the amount of MOI added. After that, an addition reaction treatment (urethane reaction treatment) was carried out in an air stream at 50°C for 12 hours to obtain a solution containing an acrylic polymer. Next, 0.8 parts by mass of a polyisocyanate compound (product name "Coronate L" manufactured by Tosoh Corporation), 3 parts by mass of a photopolymerization initiator (product name "Omnirad127D" manufactured by IGM), and 0.01 parts by mass of an antioxidant (product name "Irganox1010" manufactured by BASF Japan Ltd.) were added to 100 parts by mass of the acrylic polymer to prepare a pressure-sensitive adhesive solution. The adhesive solution was then applied to a silicone release-treated surface of a PET separator (50 μm thick) using an applicator, and dried for 2 minutes at 120° C. to form an adhesive layer having a thickness of 10 μm. A Gunze EVA film (product name "NED#125", thickness 125 μm) was then laminated as a substrate layer onto the adhesive layer, and the resulting product was stored at 50° C. for 24 hours to obtain a dicing tape. The dicing tapes in the following examples were also obtained in the same manner as above. That is, the dicing tape of each example has a common configuration.

[0091] (Dicing die bond film) The PET separator on which the die-bonding film was produced (hereinafter referred to as a die-bonding film with a PET separator) was punched out into a circle having a diameter of 330 mm, thereby obtaining a die-bonding film with a PET separator having a diameter of 330 mm. Next, the PET separator attached to the adhesive layer of the dicing tape was removed. Also, the PET separator attached to one side of the die bond film was removed. The adhesive layer of the dicing tape and the exposed surface of the die bond film were attached together using a laminate to obtain a dicing die bond film. That is, the dicing die-bonding film according to Example 1 was configured by laminating a base layer, a pressure-sensitive adhesive layer, a die-bonding film, and a PET separator in this order.

[0092] The details of each component in Table 1 are as follows: organic ingredients <Acrylic polymer> Acrylic polymer 1 Copolymer of acrylonitrile (AN), ethyl acrylate (EA), butyl acrylate (BA), and acrylic acid (AA) (mass average molecular weight: 50,000, molar ratio of AN: 40%) Acrylic polymer 2 Copolymer of acrylonitrile (AN), ethyl acrylate (EA), butyl acrylate (BA), and acrylic acid (AA) (mass average molecular weight: 35,000, molar ratio of AN: 40%) Acrylic polymer 3 Copolymer of acrylonitrile (AN), ethyl acrylate (EA), butyl acrylate (BA), and acrylic acid (AA) (mass average molecular weight: 60,000, molar ratio of AN: 30%) Acrylic polymer 4 Copolymer of acrylonitrile (AN), ethyl acrylate (EA), butyl acrylate (BA), and acrylic acid (AA) (mass average molecular weight: 70,000, molar ratio of AN: 12%) Acrylic polymer 5 Copolymer of acrylonitrile (AN), ethyl acrylate (EA), butyl acrylate (BA), and acrylic acid (AA) (mass average molecular weight: 150,000, molar ratio of AN: 30%) Acrylic polymer 6 Copolymer of acrylonitrile (AN), ethyl acrylate (EA), butyl acrylate (BA), and acrylic acid (AA) (mass average molecular weight: 100,000, molar ratio of AN: 40%) The mass average molecular weights of the acrylic polymers 1 to 6 are values ​​measured according to the method explained in the above embodiment section. <Epoxy resin> Epoxy resin 1 Nippon Kayaku Co., Ltd. product name "EPPN-501HY" (Novolac type epoxy resin (multifunctional), epoxy equivalent 167g / eq, softening point 61℃) Epoxy resin 2 DIC product name "HP-6000L" (naphthalene type epoxy resin, epoxy equivalent 215g / eq, softening point 55℃) Epoxy resin 3 DIC Corporation's product name "HP-4700" (naphthalene type epoxy resin, epoxy equivalent 165g / eq, softening point 92℃) Epoxy Resin 4 DIC product name "HP-4032D" (naphthalene type epoxy resin, epoxy equivalent 143g / eq, liquid at room temperature) Epoxy Resin 5 Daicel's product name "EHPE3150" (alicyclic epoxy resin, epoxy equivalent 177g / eq, softening point 75℃) <Phenol resin> Phenolic resin 1 Meiwa Kasei's product name "H-4" (hydroxyl equivalent: 106g / eq, softening point: 71°C) Phenolic resin 2 Meiwa Kasei's product name "HF-1M" (hydroxyl equivalent: 106g / eq, softening point: 84°C) Phenolic resin 3 Gun-ei Chemical Industry Co., Ltd.'s product name "LVR-8210DL" (novolac type phenolic resin, hydroxyl equivalent 104g / eq, softening point 65°C) <Organic dye> ·Organic dye 1 Product name "Oil Scarlet 318" manufactured by Orient Chemical Industry Co., Ltd. <Crosslinking agent (thermosetting catalyst)> Crosslinking agent 1 Product name "2PHZ-PW" manufactured by Shikoku Kasei Co., Ltd. Crosslinking agent 2 Product name "TPP-MK" manufactured by Hokko Chemical Industry Co., Ltd. Inorganic components <Inorganic filler> Inorganic filler 1 Admatechs' product name: "YA050C-MJI" (silica filler, average particle size 50 nm) Inorganic filler 2 Nissan Chemical's product name "MEK-ST-ZL" (silica filler, average particle size 80 nm) Inorganic filler 3 Admatechs' product name "SE-2050MCV" (spherical silica filler, average particle size 0.5 μm (500 nm))

[0093] [Example 2] to [Example 6] (Die bond film) Die-bonding films with PET separators were obtained in the same manner as in Example 1, except that the blending ratio of the organic component and the inorganic component was changed as shown in Table 1A below. (Dicing die bond film) Then, in the same manner as in Example 1, dicing and die-bonding films were obtained.

[0094] [Example 7] to [Example 17] (Die bond film) Die-bonding films with PET separators were obtained in the same manner as in Example 1, except that the blending ratio of the organic component and the inorganic component was changed as shown in Table 1B or Table 1C below. (Dicing die bond film) Then, in the same manner as in Example 1, dicing and die-bonding films were obtained.

[0095] [Comparative Example 1] to [Comparative Example 4] (Die bond film) Die-bonding films with PET separators were obtained in the same manner as in Example 1, except that the blending ratio of the organic component and the inorganic component was changed as shown in Table 1D below. (Dicing die bond film) Then, in the same manner as in Example 1, dicing and die-bonding films were obtained.

[0096] Moreover, the melt viscosity at 80° C. was measured for the die bond film according to each example, and the results are also shown in the following Tables 1A to 1D. The melt viscosity at 80° C. was measured according to the method described in the embodiment section above.

[0097] [Table 1A]

[0098] [Table 1B]

[0099] [Table 1C]

[0100] [Table 1D]

[0101] (Laser mark depth) For the dicing die bond film according to each example (die bond film thickness: 20 μm), the depth of the laser mark formed in the base layer when laser cutting was performed was evaluated. The laser mark depth was measured as follows. (1) The dicing die bond film according to each example was attached to a dicing ring. More specifically, the base layer of the dicing die bond film according to each example was attached to the dicing ring. The dicing die bond film according to each example was cut out to have the same dimensions as the outer diameter of the dicing ring. (2) The dicing die-bonding film according to each example was irradiated with laser light from the die-bonding film side to cut the die-bonding film into a matrix shape. In addition, the laser light irradiationThe test was carried out using a product name "DFL7161" manufactured by DISCO Corporation. The laser light was irradiated while moving the dicing die bond film according to each example at a speed of 150 mm / s. The output of the laser light was set to 0.4 W. The reason for setting the output of the laser light to 0.4 W is that it is difficult to see the difference in the depth of the laser mark with the weakest output of 0.1 W. (3) Using a laser microscope (manufactured by Keyence Corporation, product name "VK-X3000"), the depth of the laser mark formed on the base layer is measured from the die bond film side. The depth value of the obtained laser mark was evaluated according to the following criteria. Excellent: The laser mark depth is 5 μm or less. Good: The depth of the laser mark is more than 5 μm and not more than 10 μm. Unacceptable: The laser mark depth exceeds 10 μm. The results are shown in Table 2 below. The evaluation of the depth of the laser mark is an evaluation related to the tearing of the base layer of the dicing die bond film. Specifically, the better the evaluation of the depth of the laser mark (the closer to excellent), the less likely the base material layer is to tear, and the worse the evaluation of the depth of the laser mark (the closer to poor), the more likely the base material layer is to tear.

[0102] (Void) The die bond film (thickness: 2 μm) according to each example was attached to an adherend, and the presence or absence of voids was evaluated. The presence or absence of voids was determined by the following observations. (1) A mirror wafer (outer diameter 30 cm) is half-cut to form multiple regions with planar dimensions of 10 mm x 10 mm, and then a back-grind tape is attached to the mirror wafer after the half-cut process. Next, the mirror wafer with the back-grind tape attached is ground until it is 30 μm thick (back-grind process). This results in multiple mirror chips that are diced into individual pieces with planar dimensions of 10 mm x 10 mm. In other words, a collection of multiple mirror chips diced from the mirror wafer is obtained. (2) Using a Nitto Seiki Co., Ltd. product name "MA3000III", a group of multiple individualized mirror chips is bonded to the dicing die bond film according to each example, and then the backgrind tape is peeled off. (3) The bonding state of the assembly of the individual mirror chips is observed from the base layer side of the dicing die bond film according to each example. In addition, if a void is formed between the assembly of multiple individualized mirror chips and the die bond film, the area in which the void is formed is observed to have the same color as the die bond film. The observation results were evaluated according to the following criteria. Excellent: When both were attached (adhered to each other) at 50° C., no voids were observed on any of the attachment surfaces of the multiple mirror chips. Good: When both are bonded (adhered to each other) at 50°C, the adhesion surface of multiple mirror chips is 20 mm 2 Although voids of the above size were observed, when the mirror chips were bonded at 55° C., no voids were observed on any of the attachment surfaces of the multiple mirror chips. Pass: When the two were bonded (adhered to each other) at 55°C, voids larger than 20 mm2 were observed on one of the bonding surfaces of the multiple mirror chips, but when they were bonded at 60°C, no voids were observed on any of the bonding surfaces of the multiple mirror chips. Not acceptable: When both are bonded (adhered to each other) at 60°C, the adhesion surface of multiple mirror chips is 20 mm 2 Voids of this size or larger were observed. The results are shown in Table 2 below.

[0103] [Table 2]

[0104] From Table 2, it can be seen that the die bond films according to the respective examples were evaluated as being good, with the laser mark depth and voids both being "fair" or better. In contrast, it is understood that the die bond films according to each comparative example are rated as "fail" in either the evaluation of the laser mark depth or the evaluation of the voids. [Explanation of symbols]

[0105] 1 Base layer, 2 Adhesive layer, 10 Die bond film, 20 Semiconductor chip, 30 Adherend, 40 Dicing tape, 50 Dicing die bond film, G Backgrind tape, J Adsorption jig, P Pin material, R Dicing ring, T Wafer processing tape, W Semiconductor wafer.

Claims

1. A die bond film containing a thermoplastic resin as an organic component, The thermoplastic resin contains an acrylic polymer having a mass average molecular weight of 80,000 or less, The melt viscosity at 80°C is 30 kPa s or less. Die bond film.

2. It contains inorganic filler as an inorganic component, The mass ratio of the inorganic filler to the total mass of the organic component and the inorganic component is 25 mass% or less. The die-bonding film according to claim 1 .

3. The organic component further includes a thermosetting resin, The thermosetting resin includes a novolac type epoxy resin. The die-bonding film according to claim 1 or 2.

4. The softening point of the novolac epoxy resin is 85° C. or lower. The die-bonding film according to claim 3 .

5. It contains inorganic filler as an inorganic component, a mass ratio of the novolac epoxy resin to the total mass of the organic component and the inorganic component is 30 mass% or more; The die-bonding film according to claim 3 .

6. a dicing tape having a pressure-sensitive adhesive layer laminated on a base layer; A die bond film laminated on the pressure-sensitive adhesive layer of the dicing tape, The die bond film is the die bond film according to claim 1 or 2. Dicing die bond film.

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