Structure manufacturing method and resist removal method

Abstract

To provide a resist removal method that addresses technical issues of traditional resist removers, and enables treatment to be conducted in a short period while leaving no resist residue and minimizing damage to the target structure, as well as a structure manufacturing method that uses the method.SOLUTION: A structure manufacturing method is characterized by using two or more treatment liquids sequentially to remove a resist having a thickness of 50 μm or more.SELECTED DRAWING: None

Description

[Technical field]

[0001] The present invention relates to a resist stripping method used mainly in semiconductor device manufacturing processes and the like, and to a method for manufacturing a structure using said method. [Background technology]

[0002] Semiconductor integrated circuits are manufactured by applying a photoresist onto a substrate, exposing and developing the photoresist, and then etching the substrate to form a circuit. After that, the photoresist is peeled off from the substrate. Alternatively, after the circuit is formed, ashing is performed to remove the resist, and the remaining resist residue is then peeled off. Printed wiring boards are generally manufactured by laminating a dry film resist, exposing and developing it, and then etching it to form a circuit, and then peeling the resist off the substrate. A wet method using a resist stripping solution is generally used to strip the resist.

[0003] In the semiconductor field, solder bumps have recently become essential as terminals for wafer-level CSP (chip size package) and flip chip mounting, and thick resists (approximately 40 to 150 μm thick) are often used for the bump formation process. The thicker the resist film, the more difficult it is to remove. In addition, the resist film is subjected to a thermal history by the heating process (reflow) to form the bumps after embedding solder paste in the resist pattern, which can make it even more difficult to remove, so a remover with high stripping performance is required. Although a sodium hydroxide solution or a general organic solvent alone can be used as a stripping solution, the stripping performance is insufficient, and therefore various resist stripping solutions have been proposed to improve the stripping performance.

[0004] As such a resist stripping solution, for example, a resist stripping solution composition using alkanolamines is known (see Patent Document 1). However, stripping liquid compositions using alkanolamines are insufficient for stripping resist residues that have been altered to inorganic properties after treatment such as dry etching, ashing, and ion implantation. In addition, the latest sub-micron processing technology uses metallic materials including TiN, TiSi, etc., but when these metallic materials are used, stable by-products such as titanium oxide are generated during processing. Titanium oxide cannot be stripped with alkanolamines, which have been used conventionally. In addition, a technique is known for improving the stripping performance by combining a polar organic solvent with an alkaline organic compound such as an amine or an ammonium salt (see Patent Documents 2, 3, 4, 5, 6, 7, and 8). However, these techniques are not sufficient in terms of stripping performance. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 62-49355 [Patent Document 2] Patent No. 3302120 [Patent Document 3] Japanese Patent Application Publication No. 11-16882 [Patent Document 4] Japanese Patent Application Publication No. 10-239865 [Patent Document 5] JP 2001-98191 A [Patent Document 6] JP 2001-215736 A [Patent Document 7] JP 2001-312074 A [Patent Document 8] JP 2002-12897 A Summary of the Invention [Problem to be solved by the invention]

[0006] An object of the present invention is to provide a resist stripping method which solves the technical problems associated with the conventional resist stripping solutions as described above, and which can perform processing within a short time, leaving no stripping residue, and causing less damage to the target structure, and a method for manufacturing a structure using said method. [Means for solving the problem]

[0007] The present inventors have conducted extensive research to solve the above problems and have completed the present invention. That is, the present invention relates to the following 1) to 12). 1) A method for manufacturing a structure, comprising the steps of: stripping off a resist having a thickness of 50 μm or more using two or more types of processing liquids in sequence. 2) The method according to the above 1), wherein the step of using the two or more types of treatment liquids in sequence is repeated two or more times. 3) The method for producing a semiconductor device according to 1) or 2) above, wherein the two or more types of treatment liquids are (A) a swelling liquid and (B) a stripping liquid. 4) The method according to the above 3), wherein (A) is a swelling liquid containing 10% by mass or more of an organic solvent (A-1). 5) The method according to the above 3) or 4), wherein the (A) is a swelling liquid containing two or more organic solvents. 6) The method according to any one of the above 3) to 5), wherein the (A) is a swelling liquid containing an amine compound (A-2). 7) The method for producing the present invention according to any one of the above 3) to 6), wherein (B) is a basic aqueous solution. 8) The manufacturing method according to any one of 3) to 7) above, wherein (B) is a stripping solution containing an amine compound (B-1). 9) The method according to any one of 1) to 8) above, wherein the resist comprises a dry film resist. 10) The method according to any one of 1) to 9) above, wherein the resist is a resist having multiple layers of dry film resist laminated together. 11) The method according to any one of 1) to 10) above, wherein the structure is a plurality of columnar conductive structures. 12) A resist stripping method that uses two or more processing liquids in sequence to strip resist that is 50 μm or thicker. Effect of the Invention

[0008] The method for manufacturing a structure of the present invention has the advantage that it does not affect the underlying insulating layer, exhibits good stripping properties for the overlying resist materials such as liquid photoresist and dry film resist, and causes little damage to the target structure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] The method for producing a structure of the present invention is characterized in that two or more types of processing liquids are used in sequence to strip a resist having a thickness of 50 μm or more.

[0010] [About the resist] The present invention is used in a method for producing a columnar conductive structure by obtaining a plating resist film by electrolytic plating of a metal on a resist layer having openings formed therein, and then removing the plating resist film by a dipping method using a resist remover or a shower method, for example. The resist used may be a liquid photoresist or a dry film resist. Examples of liquid resists include photosensitive resists such as epoxy resin compositions, polyimide resin compositions, and acrylic resin compositions. Dry film resists are classified into negative and positive types based on the reaction mechanism. Negative types are photopolymerized and hardened by exposure to light, and become insoluble in a developer, while positive types are those in which the exposed portion becomes soluble in a developer. Currently, negative types are mainly used as dry film resists, and are generally composed of an acrylic binder polymer that imparts film-forming ability, an acrylic monomer that is responsible for the radical polymerization reaction, and additives such as a photopolymerization initiator, a dye, and an adhesive. The structure obtained by the method of the present invention has a continuous columnar structure and preferably has a height of about 50 μm or more. That is, the thickness of the resist in which the openings are formed is 50 μm or more. The lower limit of this thickness is more preferably 60 μm, 75 μm, 90 μm, 110 μm, 120 μm, 130 μm, 140 μm, 150 μm, and particularly preferably 160 μm. The upper limit may be about 500 μm, but is more preferably 450 μm, 400 μm, 350 μm, 300 μm, and particularly preferably 250 μm. When a dry film resist is used as the resist of the present invention, the thickness of a single layer is preferably 50 μm or more and 120 μm or less, and the above resist thickness can be achieved by laminating multiple layers.

[0011] [Two or more types of processing liquid] The present invention is characterized in that two or more kinds of processing liquids are used in sequence. The term "two or more kinds" means that the processing liquids have different compositions, and may be the same or different in function. However, a more preferred embodiment is one in which one of the two processing liquids (A) is a swelling liquid having a swelling function, and the other (B) is a stripping liquid having a stripping function. Note that the use of other processing liquids in addition to the two processing liquids or other steps is not excluded as an embodiment of the present invention. For example, a processing with a rinsing liquid or a drying step between the processing with one processing liquid and the processing with the other processing liquid is also an embodiment of the present invention.

[0012] [(A) About the swelling liquid] <(A-1) Organic solvent> The composition of the (A) swelling liquid is preferably a composition containing 10% by mass or more of the (A-1) organic solvent. Examples of the organic solvent include C1-C6 alcohols such as methanol, ethanol, propanol, isopropanol, butanol, isobutanol, secondary butanol, and tertiary butanol, C2-C6 diols such as ethylene glycol, diethylene glycol, 1,2-propanediol (propylene glycol), 1,3-propanediol, 1,2-butanediol, 1,4-butanediol, 1,2-hexanediol, 1,6-hexanediol, triethylene glycol, tetraethylene glycol, dipropylene glycol, polyethylene glycol, polypropylene glycol, thiodiglycol, and dithiodiglycol, and mono-, oligo-, or polyalkylene glycols or thioglycols having a C2-C6 alkylene unit; glycerin, diglycerin, hexane- Examples of suitable organic solvents include polyols (triols) such as 1,2,6-triol and trimethylolpropane, dimethyl sulfoxide (hereinafter abbreviated as DMSO), sulfolane, dimethyl sulfone, N,N-dimethylformamide (DMF), N,N-dimethylacetamide, N,N-diethylacetamide, N-methyl-2-pyrrolidone (hereinafter abbreviated as NMP), N-vinyl-2-pyrrolidone, ε-caprolactam, 1,3-dimethyl-2-imidazolidinone, tetramethylurea, hexamethylphosphoric triamide, γ-butyrolactone, δ-valerolactone, ε-caprolactone, acetonitrile, pyridine, dimethoxyethane, carbitols, diglyme, triglyme, ethylene carbonate, and propylene carbonate. A preferred embodiment of the present invention is to use two or more of these in combination. As the organic solvent, glycol-based solvents such as ethylene glycol, diethylene glycol, propylene glycol, triethylene glycol, tetraethylene glycol, dipropylene glycol, polyethylene glycol, polypropylene glycol, thiodiglycol, dithiodiglycol, and aprotic polar solvents such as DMSO, sulfolane, dimethylsulfone, DMF, N,N-dimethylacetamide, N,N-diethylacetamide, N-methyl-2-pyrrolidone (NMP), and N-vinyl-2-pyrrolidone (NMP) are more preferred, and more preferably, two or more of these are combined, particularly preferably, one glycol-based solvent and one or more aprotic polar solvents are combined, and most preferably, one glycol-based solvent and two aprotic polar solvents are combined. Specifically, the most preferred embodiment is a combination of propylene glycol, DMSO, and NMP. The content of the organic solvent in the swelling liquid (A) is preferably 10% by mass or more, more preferably 15%, 20%, 25%, 30%, 35%, 40%, 50%, 60%, 70%, 80% by mass, and particularly preferably 90% by mass or more. The upper limit may be 100% by mass, but when other components described below are contained, the upper limit is about 99%, 98%, 97%, or 95% by mass. When a glycol solvent and an aprotic polar solvent are used in combination, the blending ratio is preferably 1 / 99 to 30 / 70, more preferably 5 / 95 to 25 / 75, and particularly preferably 7 / 93 to 10 / 90. When DMSO and NMP are used in combination, the blending ratio is preferably 40 / 60 to 90 / 10, more preferably 50 / 50 to 85 / 15, and particularly preferably 60 / 40 to 80 / 20. In this specification, "to" includes the numbers before and after it.

[0013] <(A-2) Amine Compound> It is preferable that the (A) swelling liquid contains an amine compound in addition to the above organic solvent. Examples of the amine compound include monoethanolamine, diethanolamine, triethanolamine, 2-(2-aminoethoxy)ethanol, N-(2-aminoethyl)ethanolamine, N,N-dimethylethanolamine, N,N-diethylethanolamine, N,N-dibutylethanolamine, N-methylethanolamine, N-ethylethanolamine, N-butylethanolamine, N-methyldiethanolamine, N-ethyldiethanolamine, monoisopropanolamine, diisopropanolamine, and triisopropanolamine. alkanolamines such as N-(2-hydroxyethyl)piperazine and N-(2-hydroxyethyl)morpholine; ethyleneamines such as ethylenediamine, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, pentaethylenehexamine, piperazine, N-(2-aminoethyl)piperazine and triethylenediamine; N,N,N',N'-tetramethylethylenediamine, N,N,N',N'',N''-pentamethyldiethylenetriamine, N-methylpiperazine, N,N,N'-trimethylamine; N-alkyl ethyleneamines such as ethylaminoethylpiperazine, diamines other than ethyleneamines such as propanediamine, butanediamine, and hexamethylenediamine, imidazoles such as imidazole, 1-methylimidazole, 2-methylimidazole, 1,2-dimethylimidazole, 1,2,4,5-tetramethylimidazole, and 2-ethyl-4-methylimidazole, monoamines such as morpholine, cyclohexylamine, 2-ethyl-hexylamine, benzylamine, and aniline, triethylamine, tripropylamine, and the like. Amines, alkylamines such as tributylamine, tetramethylammonium hydroxide (hereinafter abbreviated as TMAH), tetra(C1-C6)alkylammonium hydroxides such as tetrabutylammonium hydroxide; tetra(C1-C6)alkylammonium carbonates such as tetramethylammonium carbonate; tetra(C1-C6)alkylammonium acetates such as tetramethylammonium acetate; tetra(C1-C6)alkylammonium citrates such as tetramethylammonium citrate;Examples of the amine compounds include tetra(C1-C6)alkylammonium silicates such as tetramethylammonium silicate; trialkyl-2-hydroxyalkylammonium hydroxides or trialkyl-2-hydroxyalkoxyalkylammonium hydroxides such as trimethyl-2-hydroxyethylammonium hydroxide (choline), trimethyl-2-hydroxyethoxyammonium hydroxide, and trimethyl-2-(2-hydroxyethoxy)ethoxyammonium hydroxide. Two or more of these amine compounds may be used in combination, and the most preferred embodiment is the combination of N-methylethanolamine and TMAH.

[0014] <Other ingredients> The (A) swelling agent may contain, in addition to the above organic solvent and amine compound, a corrosion inhibitor, a surfactant, etc. (Corrosion inhibitor) (A) Corrosion inhibitors that may be contained in the swelling agent include acetic acid, acetone oxime, acrylic acid, alanine, arginine, asparagine, betaine, dimethylglyoxime, formic acid, glyceric acid, glycerol, glycolic acid, glyoxylic acid, histidine, itaconic acid, lactic acid, leucine, lysine, maleic anhydride, mandelic acid, 2,4-pentanedione, phenylacetic acid, phenylalanine, proline, propionic acid, pyrocatechol, quinic acid, serine, sorbitol, tyrosine, valine, xylitol, tannic acid, picolinic acid, 1,3-cyclopentanedione, catechol, pyrogallol, resorcinol, hydroquinone, cyanuric acid, barbituric acid, 1,3-dimethyl These include, but are not limited to, rubarbituric acid, pyruvic acid, propanethiol, benzohydroxamic acids, 2,5-dicarboxypryidine, 4-(2-hydroxyethyl)morpholine (HEM), N-aminoethylpiperazine (N-AEP), thiourea, 1,1,3,3-tetramethylurea, urea, urea derivatives, glycine, cysteine, isoleucine, methionine, piperazine, N-(2-aminoethyl)piperazine, pyrrolidine, threonine, tryptophan, salicylic acid, p-toluenesulfonic acid, salicylhyroxyamic acid, 5-sulfosalicylic acid, and combinations thereof.

[0015] (Surfactant) Surfactants which may be contained in the (A) swelling agent include anionic, nonionic, cationic and / or zwitterionic surfactants, such as: alginic acid and its salts; carboxymethylcellulose; dextran sulfate and its salts; poly(galacturonic acid) and its salts; homopolymers of (meth)acrylic acid and its salts, maleic acid, maleic anhydride, styrene sulfonic acid and its salts, vinyl sulfonic acid and its salts, allyl sulfonic acid and its salts, and acrylamidopropyl sulfonic acid and its salts; (meth)acrylic acid and its salts, maleic acid, Copolymers of maleic anhydride, styrene sulfonic acid and its salts, vinyl sulfonic acid and its salts, allyl sulfonic acid and its salts, acrylamidopropyl sulfonic acid and its salts; chitosan; cationic starch; polylysine and its salts; diallyl dimethyl ammonium chloride (DADMAC), diallyl dimethyl ammonium bromide, diallyl dimethyl ammonium sulfate, diallyl dimethyl ammonium phosphate, dimethallyl dimethyl ammonium chloride, diethylallyl ammonium chloride, diallyl di(beta-hydroxyethyl) ammonium chloride, diallyl di(beta-ethoxyethyl) ammonium chloride, dimethylaminoethyl (meth)acrylate acid addition salts and quaternary salts, diethylaminoethyl (meth)acrylate acid addition salts and quaternary salts, 7-amino-3,7-dimethyloctyl (meth)acrylate acid addition salts and quaternary salts, N,N'-dimethylaminopropylacrylamido acid addition salts and quaternary salts, homopolymers of allylamine, diallylamine, vinylamine, vinylpyridine;and diallyl dimethyl ammonium chloride (DADMAC), diallyl dimethyl ammonium bromide, diallyl dimethyl ammonium sulfate, diallyl dimethyl ammonium phosphate, dimethallyl dimethyl ammonium chloride, diethylallyl ammonium chloride, diallyl di(beta-hydroxyethyl) ammonium chloride, diallyl di(beta-ethoxyethyl) ammonium chloride, dimethylaminoethyl (meth)acrylate acid addition salts and quaternary salts, diethylaminoethyl (meth)acrylate acid addition salts and quaternary salts, 7 -Amino-3,7-dimethyloctyl (meth)acrylate acid addition salts and quaternary salts, N,N'-dimethylaminopropylacrylamido acid addition salts and quaternary salts, copolymers of allylamine, diallylamine, vinylamine, vinylpyridine; Cocodimethylcarboxymethyl betaine; Lauryldimethylcarboxymethyl betaine; Lauryldimethyl-alpha-carboxyethyl betaine; Cetyldimethylcarboxymethyl betaine; Lauryl-bis-(2-hydroxyethyl)carboxymethyl betaine; Stearyl-bis-(2-hydroxypropyl)carbamate carboxymethyl betaine;oleyl dimethyl gamma carboxypropyl betaine;lauryl bis (2-hydroxypropyl) alpha carboxyethyl betaine;coco dimethyl sulfopropyl betaine;stearyl dimethyl sulfopropyl betaine;lauryl bis (2-hydroxyethyl) sulfopropyl betaine;sodium dodecyl sulfate;dioctyl sulfosuccinic acid sodium salt;sodium lauryl ether sulfate;polyethylene glycol branched nonylphenyl ether sulfate ammonium salt;2-dodecyl-3-(2-sulfonatophenone (2-N-Butoxyethoxy)acetic acid;Hexadecylbenzenesulfonic acid;Cetyltrimethylammonium hydroxide;Dodecyltrimethylammonium hydroxide;Dodecyltrimethylammonium chloride;Cetyltrimethylammonium chloride;N-Alkyl-N-benzyl-N,N-dimethylammonium chloride;Dodecylamine;Polyoxyethylene lauryl ether;Dodecenylsuccinic acid monodiethanolamide;Ethylenediaminetetrakis(ethoxylate-block-propoxylate); and combinations thereof.

[0016] <(B) Stripping solution> When the other of the processing liquids is a stripping liquid (B), the processing with the liquid (B) is carried out after the processing with the liquid (A). It should be noted again that the present invention does not exclude a method in which a processing with another processing liquid or another step is inserted between the processing with the liquid (A) and the processing with the liquid (B). The composition of the stripping solution (B) is preferably a basic aqueous solution, which preferably contains an amine compound (B-1) and water (B-3), and may also contain an organic solvent having a hydroxyl group (B-2).

[0017] ((B-1) Amine Compound) Examples of the amine compound include monoethanolamine, diethanolamine, triethanolamine, 2-(2-aminoethoxy)ethanol, N-(2-aminoethyl)ethanolamine, N,N-dimethylethanolamine, N,N-diethylethanolamine, N,N-dibutylethanolamine, N-methylethanolamine, N-ethylethanolamine, N-butylethanolamine, N-methyldiethanolamine, N-ethyldiethanolamine, monoisopropanolamine, diisopropanolamine, and triisopropanolamine. alkanolamines such as ethylenediamine, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, pentaethylenehexamine, piperazine, N-(2-aminoethyl)piperazine, triethylenediamine, etc.; ethyleneamines such as N,N,N',N'-tetramethylethylenediamine, N,N,N',N'',N''-pentamethyldiethylenetriamine, N-methylpiperazine, N,N, N-alkylethyleneamines such as N'-trimethylaminoethylpiperazine, diamines other than ethyleneamines such as propanediamine, butanediamine, and hexamethylenediamine, imidazoles such as imidazole, 1-methylimidazole, 2-methylimidazole, 1,2-dimethylimidazole, 1,2,4,5-tetramethylimidazole, and 2-ethyl-4-methylimidazole, monoamines such as morpholine, cyclohexylamine, 2-ethyl-hexylamine, benzylamine, and aniline, triethylamine, tripeptide, and amines such as phenylamine, ... alkylamines such as propylamine and tributylamine; tetra(C1-C6) alkylammonium hydroxides such as tetramethylammonium hydroxide (hereinafter abbreviated as TMAH) and tetrabutylammonium hydroxide; tetra(C1-C6) alkylammonium carbonates such as tetramethylammonium carbonate; tetra(C1-C6) alkylammonium acetates such as tetramethylammonium acetate; tetra(C1-C6) alkylammonium citrates such as tetramethylammonium citrate;Examples of the amine compounds include tetra(C1-C6)alkylammonium silicates such as tetramethylammonium silicate; trialkyl-2-hydroxyalkylammonium hydroxides or trialkyl-2-hydroxyalkoxyalkylammonium hydroxides such as trimethyl-2-hydroxyethylammonium hydroxide (choline), trimethyl-2-hydroxyethoxyammonium hydroxide, and trimethyl-2-(2-hydroxyethoxy)ethoxyammonium hydroxide. Two or more of these amine compounds may be used in combination, and particularly preferably three or more, and most preferably four or more. Specifically, the most preferred is a combination of TMAH, diethanolamine, N-methylethanolamine, and triethanolamine sulfate.

[0018] ((B-2) Organic solvent having a hydroxyl group) Examples of organic solvents having a hydroxyl group include C1-C6 alcohols such as methanol, ethanol, propanol, isopropanol, butanol, isobutanol, secondary butanol, and tertiary butanol; C2-C6 diols such as ethylene glycol, diethylene glycol, 1,2-propanediol, 1,3-propanediol, 1,2-butanediol, 1,4-butanediol, 1,2-hexanediol, 1,6-hexanediol, diethylene glycol, triethylene glycol, tetraethylene glycol, dipropylene glycol, polyethylene glycol, polypropylene glycol, thiodiglycol, and dithiodiglycol; and mono-, oligo-, or polyalkylene glycols or thioglycols having a C2-C6 alkylene unit; polyols (triols) such as glycerin, diglycerin, hexane-1,2,6-triol, and trimethylolpropane; aromatic alcohols such as benzyl alcohol; and polyoxyalkylene alkyl ethers such as polyoxyethylene (3) lauryl ether. Two or more of these may be used in combination. Of these, a preferred embodiment is a combination of benzyl alcohol and polyoxyethylene (3) lauryl ether.

[0019] ((B-3)Wed) The content of water in the stripping solution (B) is usually 1% by mass or more and 99% by mass or less, more preferably 10% by mass or more and 98% by mass or less, particularly preferably 20% by mass or more and 97% by mass or less, and most preferably 25% by mass or more and 95% by mass or less.

[0020] (Other ingredients) Other components that may be contained in the basic aqueous solution include a corrosion inhibitor, a surfactant, etc. The corrosion inhibitors and surfactants that can be used, including preferred ones, are the same as those in the case of (A) the swelling liquid.

[0021] (About pH) (B) The stripping solution preferably has a pH of 8.0 or higher. (B) The pH of the stripping solution is more preferably 10.0 or more, and particularly preferably 12.0 or more. The upper limit may be about 14.0.

[0022] [Processing count] In the manufacturing method of the present invention, a sufficient effect can be obtained by using the above two or more types of processing liquids in sequence, but a more significant effect can be confirmed by repeating this process two or more times. For example, even when the resist thickness becomes thicker, sufficient resist strippability can be achieved and damage to the structure can be suppressed to a low level. For example, if the use of two or more types of processing liquids in sequence is considered as one set, two or more sets are preferable, and three or more sets are more preferable. The upper limit can be set while checking the state of resist stripping, and about five sets are preferable when the resist exceeds 450 μm. Furthermore, when repeating multiple times, the treatment liquids in the first set and the second set onwards do not need to be the same, and can be changed as appropriate while checking the state of resist stripping. However, taking into consideration the complexity of preparation, it is preferable to use the same two or more types of treatment liquids in the first set and the second set onwards.

[0023] [Structure] The structure obtained by the manufacturing method of the present invention is a columnar conductive structure. The pillar-shaped conductive structure is related to the flip-chip mounting technology that has been attracting attention in recent years due to the high integration of chips, and corresponds to the pillar-shaped part of the Cu pillar method. This pillar-shaped conductive structure can be formed by forming a wiring pattern using resist, developing it, forming Cu pillars using a plating method, and then removing the resist. EXAMPLES

[0024] The present invention will be described below with reference to examples and comparative examples, but the present invention is not limited to these examples. It is not something that can be determined.

[0025] <Preparation of Chemical Solutions 1 to 4> Chemical solutions 1 to 8 were prepared by mixing the components as shown in Table 1. In Table 1, the amounts mixed indicate parts by mass. [Table 1]

[0026] <Creating test pieces> Three layers of 100 μm thick acrylic resin dry film resist were laminated on a Cu-plated substrate, and the substrate was cut to 30 mm × 30 mm to prepare a test piece.

[0027] <Resist stripping evaluation> The above test pieces were subjected to immersion treatment in chemical solutions at 60° C. according to the descriptions in Tables 2 and 3. The chemicals used, the treatment time, the time required for stripping, and the results of observing the discoloration of the Cu after stripping are also shown. [Table 2] [Table 3]

[0028] ◎: No discoloration ○: Some discoloration △: Less than half of the color has changed ×: More than half discolored *: No peeling even after immersion for 100 minutes

[0029] As is clear from Tables 1 to 3, when two or more types of processing liquids are used in sequence, it can be confirmed that when stripping a resist with a thickness of 50 μm or more, the stripping time is shortened and damage to Cu is reduced. [Industrial Applicability]

[0030] According to the structure manufacturing method and resist stripping method of the present invention, the process can be carried out in a short time, without leaving any residue, and with little damage to the target structure, which contributes to easier and more economical manufacturing of semiconductor devices and liquid crystal devices.

Claims

1. A method for manufacturing a structure, comprising the steps of: stripping a resist having a thickness of 50 μm or more by using two or more types of processing liquids in sequence.

2. The method according to claim 1 , wherein the step of using the two or more treatment solutions in sequence is repeated two or more times.

3. The method according to claim 1 or 2, wherein the two or more types of treatment liquids are (A) a swelling liquid and (B) a stripping liquid.

4. The method according to claim 3, wherein the (A) is a swelling liquid containing 10 mass % or more of an organic solvent (A-1).

5. The method according to claim 3, wherein the (A) is a swelling liquid containing two or more organic solvents.

6. The method according to claim 3, wherein the (A) is a swelling liquid containing an amine compound (A-2).

7. The method according to claim 3 , wherein the (B) is a basic aqueous solution.

8. The method according to claim 3, wherein the (B) is a stripping solution containing an amine compound (B-1).

9. The method according to claim 1 or 2, wherein the resist comprises a dry film resist.

10. 3. The method according to claim 1, wherein the resist is a resist having a plurality of layers of dry film resist laminated together.

11. The method according to claim 1 or 2, wherein the structure is a plurality of pillar-shaped conductive structures.

12. A resist stripping method for stripping a resist having a thickness of 50 μm or more by using two or more types of processing liquids in sequence.

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