Semiconductor device

Abstract

To provide a semiconductor device that can mitigate the thermal stress imposed on a semiconductor element while withstanding a larger current.SOLUTION: A semiconductor device A10 includes: a first die pad 11 having a first principal surface 111; a semiconductor element 21 having a first electrode 211 located on a side to which the first principal surface is oriented, the semiconductor element being connected to the first principal surface; a first conductive member 30A electrically connected to the first electrode; and a first bonding layer 24 electrically connecting the first conductive member and the first electrode. The conductive member includes a body portion, a first connecting portion 32 electrically connected to the electrode via the first bonding layer, a first joint portion 33 connecting the body portion and the first connecting portion, and a distal end portion 34 connected to the first connecting portion. The distal end portion is inclined so as to be farther from the electrode, in a direction away from the first connecting portion. As viewed along a thickness direction z, the first electrode includes an expanded region 212A, protruding from the first conductive member to an opposite side of the first connecting portion in a second direction (in-plane direction y), with respect to the distal end portion.SELECTED DRAWING: Figure 15

Description

[Technical field]

[0001] The present disclosure relates to a semiconductor device including a semiconductor element. [Background technology]

[0002] Conventionally, semiconductor devices including semiconductor elements such as MOSFETs are widely known. Such semiconductor devices are used, for example, in power conversion circuits (inverters, etc.) and perform current conversion based on a predetermined electric signal. Patent Document 1 discloses an example of a semiconductor device including a MOSFET. The semiconductor device includes a drain terminal to which a power supply voltage is applied, a gate terminal for inputting an electric signal, and a source terminal through which a converted current flows. Meanwhile, the MOSFET has a drain electrode that is conductive to the drain terminal, a gate electrode that is conductive to the gate terminal, and a source electrode that is conductive to the source terminal. The drain electrode of the MOSFET is electrically connected to a die pad (connected to the drain terminal) via solder (first conductive bonding material). The source electrode of the MOSFET is connected to a conductive member (metal clip) via solder (second conductive bonding material). The source terminal is also connected to this conductive member. With this configuration, it is possible to pass a large current through the semiconductor device.

[0003] In the semiconductor device disclosed in Patent Document 1, thermal stress tends to concentrate at the interface between the source electrode and the second conductive bonding material during use. This is because heat generated from the MOSFET is conducted to the second conductive bonding material via the source electrode. The heat generated from the MOSFET is also conducted to the first conductive bonding material via the drain electrode. However, since the size of the source electrode is smaller than the size of the drain electrode, the concentration of thermal stress becomes significant between the source electrode and the second conductive bonding material. When thermal stress is concentrated, cracks may occur in both the source electrode and the second conductive bonding material. Therefore, a measure to alleviate the thermal stress acting on the MOSFET by reducing the concentration of thermal stress is desired. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2016-192450 A Summary of the Invention [Problem to be solved by the invention]

[0005] In view of the above circumstances, one object of the present disclosure is to provide a semiconductor device capable of mitigating thermal stress acting on a semiconductor element while accommodating a larger current. [Means for solving the problem]

[0006] The semiconductor device provided by the present disclosure includes a first die pad having a first main surface facing a thickness direction; a semiconductor element having an electrode provided on the side where the first main surface faces in the thickness direction and bonded to the first main surface; a conductive member electrically bonded to the electrode; and a first bonding layer electrically bonding the conductive member and the electrode. The conductive member has a main body, a first bonding portion electrically bonded to the electrode by the first bonding layer, a first connecting portion connecting the main body and the first bonding portion, and a tip portion located away from the first connecting portion and connected to the first bonding portion. When viewed along the in-plane direction of the first main surface, the tip portion is inclined in a direction away from the electrode as it moves away from the first bonding portion. When viewed along the thickness direction, the electrode includes an extension region that protrudes from the conductive member on the opposite side of the tip portion to the first bonding portion in the in-plane direction. Effect of the Invention

[0007] According to the above configuration, the semiconductor device can accommodate a larger current while mitigating the thermal stress acting on the semiconductor element.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. [Brief description of the drawings]

[0009] [Figure 1] 1 is a perspective view of a semiconductor device according to a first embodiment of the present disclosure. [Diagram 2] FIG. 2 is a plan view of the semiconductor device shown in FIG. [Diagram 3] FIG. 3 is a plan view corresponding to FIG. 2 and seen through the sealing resin. [Figure 4] 2 is a bottom view of the semiconductor device shown in FIG. 1. [Diagram 5] FIG. 2 is a front view of the semiconductor device shown in FIG. [Figure 6] 2 is a right side view of the semiconductor device shown in FIG. [Figure 7] FIG. 4 is a cross-sectional view taken along line VII-VII in FIG. [Figure 8] FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. [Figure 9] FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. [Figure 10] FIG. 4 is a cross-sectional view taken along line XX in FIG. [Figure 11] FIG. 4 is a cross-sectional view taken along line XI-XI in FIG. [Figure 12] 2 is a plan view of a first conductive member of the semiconductor device shown in FIG. [Figure 13] 2 is a plan view of a second conductive member of the semiconductor device shown in FIG. 1. [Figure 14] FIG. 4 is a partially enlarged view of FIG. [Figure 15] FIG. 8 is a partially enlarged view of FIG. [Figure 16] FIG. 8 is a partially enlarged view of FIG. [Figure 17] FIG. 4 is a partially enlarged view of FIG. [Figure 18] FIG. 9 is a partially enlarged view of FIG. 8. [Figure 19] 11 is a plan view of a semiconductor device according to a second embodiment of the present disclosure, seen through a sealing resin. FIG. [Figure 20] FIG. 20 is a partially enlarged view of FIG. [Figure 21] FIG. 21 is a cross-sectional view taken along line XXI-XXI in FIG. 20. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] An embodiment of the present disclosure will be described with reference to the accompanying drawings.

[0011] A semiconductor device A10 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 to 18. The semiconductor device A10 includes a first die pad 11, a second die pad 12, a first input terminal 13, an output terminal 14, a second input terminal 15, a pair of semiconductor elements 21, a die bonding layer 23, a first bonding layer 24, a second bonding layer 25, a first conductive member 30A, a second conductive member 30B, and a sealing resin 50. The semiconductor device A10 further includes a first gate terminal 161, a second gate terminal 162, a first detection terminal 171, a second detection terminal 172, a pair of protection elements 22, a third bonding layer 26, a pair of gate wires 41, and a pair of detection wires 42. For ease of understanding, FIG. 3 shows the sealing resin 50 through which the sealing resin 50 is shown by an imaginary line (two-dot chain line). The IX-IX line and the XX line are each shown by a dashed line.

[0012] In the following description, for convenience, the thickness direction of the first die pad 11 (or the second die pad 12) is referred to as the "thickness direction z". A direction perpendicular to the thickness direction z is referred to as the "first direction x". A direction perpendicular to both the thickness direction z and the first direction x is referred to as the "second direction y". The "in-plane direction" of the first main surface 111 of the first die pad 11 is a direction parallel to the first main surface, and in this disclosure, refers to either the first direction x or the second direction y depending on the situation. For example, in a description of a certain member, the "in-plane direction" is the first direction x, and in a description of another member, the "in-plane direction" is the second direction y.

[0013] The semiconductor device A10 converts a DC power supply voltage applied to a first input terminal 13 and a second input terminal 15 into AC power by a pair of semiconductor elements 21. The converted AC power is input to a power supply target such as a motor from an output terminal 14. The semiconductor device A10 is used in a power conversion circuit such as an inverter.

[0014] As shown in FIG. 3, FIG. 7, and FIG. 8, the first die pad 11 is a conductive member on which one of the pair of semiconductor elements 21 (first switching element 21A) and one of the pair of protection elements 22 (first diode 22A) are mounted. The first die pad 11 is composed of the same lead frame together with the second die pad 12, the first input terminal 13, the output terminal 14, the second input terminal 15, the first gate terminal 161, the second gate terminal 162, the first detection terminal 171, and the second detection terminal 172. The lead frame is made of copper (Cu) or a copper alloy. Therefore, the composition of each of the first die pad 11, the second die pad 12, the first input terminal 13, the output terminal 14, the second input terminal 15, the first gate terminal 161, the second gate terminal 162, the first detection terminal 171, and the second detection terminal 172 includes copper (i.e., each of the above members contains copper). The first die pad 11 has a first main surface 111 and a first back surface 112. The first main surface 111 faces the thickness direction z. A first switching element 21A and a first diode 22A are mounted on the first main surface 111. In the present disclosure, when it is said that a member B is mounted (placed, provided, etc.) on a member A, the member A and the member B may be in direct contact with each other, or at least one other member may be interposed between the member A and the member B. The first back surface 112 faces the opposite side to the first main surface 111 in the thickness direction z. The first back surface 112 is plated with, for example, tin (Sn). As shown in FIG. 7 and FIG. 8, the thickness T1 of the first die pad 11 is set to a maximum thickness t of the first conductive member 30A. max is greater than

[0015] As shown in FIG. 3, FIG. 7, and FIG. 8, the second die pad 12 is a conductive member on which the other of the pair of semiconductor elements 21 (the second switching element 21B) and one of the pair of protective elements 22 (the second diode 22B) are mounted. The second die pad 12 is located away from the first die pad 11 in the in-plane direction (the second direction y). The second die pad 12 has a second main surface 121 and a second back surface 122. The second main surface 121 faces the same side as the first main surface 111 in the thickness direction z. The second switching element 21B and the second diode 22B are mounted on the second main surface 121. The second back surface 122 faces the opposite side to the second back surface 122 in the thickness direction z. The second back surface 122 is, for example, tin-plated. As shown in FIG. 7 and FIG. 8, the thickness T2 of the second die pad 12 is set to a value smaller than the maximum thickness t of the first conductive member 30A. max is greater than

[0016] As shown in FIG. 3 and FIG. 7, the pair of semiconductor elements 21 includes a first switching element 21A and a second switching element 21B. The first switching element 21A is bonded to the first main surface 111 of the first die pad 11. The second switching element 21B is bonded to the second main surface 121 of the second die pad 12. The pair of semiconductor elements 21 are, for example, MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). In the description of the semiconductor device A10, the pair of semiconductor elements 21 are n-channel type MOSFETs having a vertical structure. Each semiconductor element 21 includes a compound semiconductor substrate. The composition of the compound semiconductor substrate includes silicon carbide (SiC). In addition, the composition of the compound semiconductor substrate may include gallium nitride (GaN). As shown in FIG. 15, each semiconductor element 21 has a first electrode 211, a second electrode 212, and a third electrode 213.

[0017] 15, the first electrode 211 is provided facing either the first main surface 111 of the first die pad 11 or the second main surface 121 of the second die pad 12 (through the die bonding layer 23). A voltage corresponding to the power to be converted is applied to the first electrode 211. The first electrode 211 corresponds to a drain electrode.

[0018] As shown in FIG. 15, the second electrode 212 is provided on the opposite side to the first electrode 211 in the thickness direction z. That is, the second electrode 212 is provided on the side facing the same direction as the first main surface 111 of the first die pad 11. A current corresponding to the power converted by one of the pair of semiconductor elements 21 flows through the second electrode 212. The second electrode 212 corresponds to a source electrode. The second electrode 212 includes a plurality of metal plating layers. The second electrode 212 includes a nickel (Ni) plating layer and a gold (Au) plating layer laminated on the nickel plating layer. Alternatively, the second electrode 212 may include a nickel plating layer, a palladium (Pd) plating layer laminated on the nickel plating layer, and a gold plating layer laminated on the palladium plating layer.

[0019] As shown in FIG. 14 and FIG. 15, the third electrode 213 is provided on the same side as the second electrode 212 in the thickness direction z, and is located away from the second electrode 212. A gate voltage for driving one of the pair of semiconductor elements 21 is applied to the third electrode 213. The third electrode 213 corresponds to a gate electrode. In each semiconductor element 21, a current corresponding to a voltage applied to the first electrode 211 is converted based on the gate voltage. When viewed along the thickness direction z, the area of ​​the third electrode 213 is smaller than the area of ​​the second electrode 212.

[0020] As shown in FIG. 3 and FIG. 8, the pair of protection elements 22 includes a first diode 22A and a second diode 22B. The first diode 22A is bonded to the first main surface 111 of the first die pad 11. The second diode 22B is bonded to the second main surface 121 of the second die pad 12. Each protection element 22 is, for example, a Schottky barrier diode. The first diode 22A is connected in parallel to the first switching element 21A. The second diode 22B is connected in parallel to the second switching element 21B. Each protection element 22 is a so-called freewheel diode. That is, when a reverse bias is applied to each semiconductor element 21, a current flows not through the semiconductor element 21 but through the protection element 22 connected in parallel thereto. As shown in FIG. 18, each protection element 22 has an upper electrode 221 and a lower electrode 222.

[0021] 18, the top electrode 221 is provided on the side toward the first main surface 111 of the first die pad 11 in the thickness direction z. In each protection element 22, the top electrode 221 is electrically connected to the second electrode 212 of the semiconductor element 21 connected in parallel to the protection element 22. The top electrode 221 corresponds to an anode electrode.

[0022] 18, the lower electrode 222 is provided on the opposite side to the upper electrode 221 in the thickness direction z. In each protection element 22, the lower electrode 222 is electrically connected to the first electrode 211 of the semiconductor element 21 connected in parallel to the protection element 22. The lower electrode 222 corresponds to a cathode electrode.

[0023] As shown in FIG. 3, FIG. 15, and FIG. 18, the die bonding layer 23 includes a portion located between the first main surface 111 of the first die pad 11, the second main surface 121 of the second die pad 12, the first electrodes 211 of the pair of semiconductor elements 21, and the lower electrodes 222 of the pair of protection elements 22. The die bonding layer 23 is made of a material having electrical conductivity. The die bonding layer 23 is, for example, lead-free solder. Alternatively, the die bonding layer 23 may be lead solder. The die bonding layer 23 electrically connects the first electrode 211 of the first switching element 21A and the lower electrode 222 of the first diode 22A to the first main surface 111. As a result, the first electrode 211 of the first switching element 21A and the lower electrode 222 of the first diode 22A are electrically connected to the first die pad 11. The die bonding layer 23 electrically connects the first electrode 211 of the second switching element 21B and the bottom electrode 222 of the second diode 22B to the second main surface 121. As a result, the first electrode 211 of the second switching element 21B and the bottom electrode 222 of the second diode 22B are electrically connected to the second die pad 12.

[0024] As shown in FIG. 3, the first input terminal 13 includes a portion extending along the first direction x and is connected to the first die pad 11. Therefore, the first input terminal 13 is electrically connected to the first die pad 11. The first input terminal 13 is a P terminal (positive electrode) to which a DC power supply voltage to be converted is applied. The first input terminal 13 has a covering portion 13A and an exposed portion 13B. As shown in FIG. 9, the covering portion 13A is connected to the first die pad 11 and is covered with the sealing resin 50. When viewed along the second direction y, the covering portion 13A is bent. As shown in FIGS. 2 to 5, the exposed portion 13B is connected to the covering portion 13A and is exposed from the sealing resin 50. The exposed portion 13B extends toward a side away from the first die pad 11 in the first direction x. The surface of the exposed portion 13B is, for example, tin-plated.

[0025] As shown in FIG. 3, the output terminal 14 includes a portion extending along the first direction x and is connected to the second die pad 12. Therefore, the output terminal 14 is electrically connected to the second die pad 12. AC power converted by each semiconductor element 21 is output from the output terminal 14. The output terminal 14 has a covering portion 14A and an exposed portion 14B. The covering portion 14A is connected to the second die pad 12 and is covered with a sealing resin 50 (see FIG. 11). When viewed along the second direction y, the covering portion 14A is bent in the same manner as the covering portion 13A of the first input terminal 13. As shown in FIGS. 2 to 5, the exposed portion 14B is connected to the covering portion 14A and is exposed from the sealing resin 50. The exposed portion 14B extends toward a side away from the second die pad 12 in the first direction x. The surface of the exposed portion 14B is, for example, tin-plated.

[0026] As shown in FIG. 3, the second input terminal 15 is located away from both the first die pad 11 and the second die pad 12 in the first direction x, and is located between the first input terminal 13 and the output terminal 14 in the second direction y. The second input terminal 15 extends along the first direction x. The second input terminal 15 is electrically connected to the second electrode 212 of the second switching element 21B and the upper electrode 221 of the second diode 22B. The second input terminal 15 is an N terminal (negative electrode) to which a power supply voltage (corresponding to a direct current to be converted into power) is applied. The second input terminal 15 has a covering portion 15A and an exposed portion 15B. As shown in FIG. 10, the covering portion 15A is covered with a sealing resin 50. As shown in FIGS. 2 to 5, the exposed portion 15B is connected to the covering portion 15A and is exposed from the sealing resin 50. The exposed portion 15B extends in the first direction x away from both the first die pad 11 and the second die pad 12. The surface of the exposed portion 15B is plated with, for example, tin.

[0027] As shown in FIG. 3, the first gate terminal 161 is located away from the first die pad 11 in the first direction x and is located at one end in the second direction y. As shown in FIG. 3, the second gate terminal 162 is located away from the second die pad 12 in the first direction x and is located at the other end in the second direction y. The first gate terminal 161 is electrically connected to the third electrode 213 of the first switching element 21A. A gate voltage for driving the first switching element 21A is applied to the first gate terminal 161. The second gate terminal 162 is electrically connected to the third electrode 213 of the second switching element 21B. A gate voltage for driving the second switching element 21B is applied to the second gate terminal 162.

[0028] As shown in Fig. 3, the first gate terminal 161 has a covered portion 161A and an exposed portion 161B. As shown in Fig. 11, the covered portion 161A is covered with the sealing resin 50. As shown in Figs. 2 to 5, the exposed portion 161B is connected to the covered portion 161A and is exposed from the sealing resin 50. The exposed portion 161B extends toward a side away from the first die pad 11 in the first direction x. The surface of the exposed portion 161B is plated with, for example, tin.

[0029] As shown in Fig. 3, the second gate terminal 162 has a covered portion 162A and an exposed portion 162B. As shown in Fig. 11, the covered portion 162A is covered with the sealing resin 50. As shown in Figs. 2 to 5, the exposed portion 162B is connected to the covered portion 162A and is exposed from the sealing resin 50. The exposed portion 162B extends toward a side away from the second die pad 12 in the first direction x. The surface of the exposed portion 162B is plated with, for example, tin.

[0030] As shown in FIG. 3, the first detection terminal 171 is located away from the first die pad 11 in the first direction x, and is located between the first input terminal 13 and the first gate terminal 161 in the second direction y. As shown in FIG. 3, the second detection terminal 172 is located away from the second die pad 12 in the first direction x, and is located between the output terminal 14 and the second gate terminal 162 in the second direction y. The first detection terminal 171 is electrically connected to the second electrode 212 of the first switching element 21A. A voltage corresponding to a current flowing through the second electrode 212 of the first switching element 21A is applied to the first detection terminal 171. The second detection terminal 172 is electrically connected to the second electrode 212 of the second switching element 21B. A voltage corresponding to a current flowing through the second electrode 212 of the second switching element 21B is applied to the second detection terminal 172.

[0031] As shown in Fig. 3, the first detection terminal 171 has a covered portion 171A and an exposed portion 171B. As shown in Fig. 11, the covered portion 171A is covered with the sealing resin 50. As shown in Figs. 2 to 5, the exposed portion 171B is connected to the covered portion 171A and is exposed from the sealing resin 50. The exposed portion 171B extends toward a side away from the first die pad 11 in the first direction x. A surface of the exposed portion 171B is plated with, for example, tin.

[0032] As shown in Fig. 3, the second detection terminal 172 has a covered portion 172A and an exposed portion 172B. As shown in Fig. 11, the covered portion 172A is covered with the sealing resin 50. As shown in Figs. 2 to 5, the exposed portion 172B is connected to the covered portion 172A and is exposed from the sealing resin 50. The exposed portion 172B extends toward a side away from the second die pad 12 in the first direction x. The surface of the exposed portion 172B is plated with, for example, tin.

[0033] 5, in the semiconductor device A10, the height h of each of the exposed portion 13B of the first input terminal 13, the exposed portion 14B of the output terminal 14, and the exposed portion 15B of the second input terminal 15 is equal. The thicknesses of these exposed portions are also equal. Therefore, when viewed along the second direction y, at least a portion (exposed portion 15B) of the second input terminal 15 overlaps with each of the first input terminal 13 and the output terminal 14 (see FIG. 6).

[0034] As shown in FIG. 3, the first conductive member 30A is electrically connected to the second electrode 212 of the first switching element 21A, the upper electrode 221 of the first diode 22A, and the second main surface 121 of the second die pad 12. As a result, the second electrode 212 of the first switching element 21A and the upper electrode 221 of the first diode 22A are electrically connected to the second die pad 12 while being mutually conductive. As shown in FIG. 3, the second conductive member 30B is connected to the second electrode 212 of the second switching element 21B, the upper electrode 221 of the second diode 22B, and the covering portion 15A of the second input terminal 15. As a result, the second electrode 212 of the second switching element 21B and the upper electrode 221 of the second diode 22B are electrically connected to the second input terminal 15 while being mutually conductive.

[0035] The composition of each of the first conductive member 30A and the second conductive member 30B includes copper. In the semiconductor device A10, each of the first conductive member 30A and the second conductive member 30B is a metal clip. As shown in Fig. 12 and Fig. 13, each of the first conductive member 30A and the second conductive member 30B has a main body portion 31, a first joint portion 32, a first connecting portion 33, a tip portion 34, a second joint portion 35, a second connecting portion 36, a third joint portion 37, and a tip portion 38.

[0036] 12 and 13, the body portion 31 forms a main portion of each of the first conductive member 30A and the second conductive member 30B. As shown in FIGS. 7, 8, and 10, the body portion 31 is parallel to the first main surface 111 of the first die pad 11 and the second main surface 121 of the second die pad 12. The body portion 31 of the second conductive member 30B is located farther away from both the first main surface 111 and the second main surface 121 than the body portion 31 of the first conductive member 30A, and straddles the second joint portion 35 of the first conductive member 30A.

[0037] As shown in FIG. 3 and FIG. 7, the first joint 32 is electrically joined to the second electrode 212 of one of the pair of semiconductor elements 21. The first joint 32 of the first conductive member 30A is electrically joined to the second electrode 212 of the first switching element 21A. The first joint 32 of the second conductive member 30B is electrically joined to the second electrode 212 of the second switching element 21B. The first joint 32 is parallel to the second electrode 212 of one of the pair of semiconductor elements 21. As shown in FIG. 15, the first joint 32 has a first joint surface 321 and a first opening 322. The first joint surface 321 faces the second electrode 212 of one of the pair of semiconductor elements 21. The first opening 322 penetrates the first joint 32 in the thickness direction z. As shown in FIG. 14, the first opening 322 is circular when viewed along the thickness direction z. The area (opening area) of the first opening 322 is 0.25 mm 2 That's all.

[0038] As shown in FIG. 7, FIG. 12, and FIG. 13, the first connecting portion 33 connects the main body portion 31 and the first bonding portion 32. As shown in FIG. 7, the first connecting portion 33 is inclined in a direction away from either the first main surface 111 of the first die pad 11 or the second main surface 121 of the second die pad 12 as it moves from the first bonding portion 32 toward the main body portion 31, as viewed along the in-plane direction (first direction x). As shown in FIG. 15, the first connecting portion 33 has a first inclined surface 331 and a boundary 332. The first inclined surface 331 is connected to the first bonding surface 321 of the first bonding portion 32, and is inclined with respect to the first bonding surface 321. As viewed along the in-plane direction (first direction x), the magnitude of the inclination angle α1 that the first inclined surface 331 makes with respect to the first bonding surface 321 is 30° or more and 60° or less. The boundary 332 refers to the intersection line between the first bonding surface 321 and the first inclined surface 331. As shown in Fig. 14, when viewed along the thickness direction z, the boundary 332 is located inward from the periphery of one of the pair of semiconductor elements 21. The shortest distance d1 between the periphery and the boundary 332 is not less than 0.2 mm and not more than 0.5 mm.

[0039] As shown in FIG. 7, FIG. 12, and FIG. 13, the tip portion 34 is located away from the first connecting portion 33 and is connected to the first bonding portion 32. In the in-plane direction (second direction y), the tip portion 34 is located on the opposite side of the first bonding portion 32 from the first connecting portion 33. As shown in FIG. 15, when viewed along the in-plane direction (first direction x), the tip portion 34 is inclined in a direction away from either the second electrode 212 of the pair of semiconductor elements 21 as it moves away from the first bonding portion 32. As shown in FIG. 14, the second electrode 212 of the first switching element 21A includes an extension region 212A that protrudes from the first conductive member 30A on the opposite side of the first bonding portion 32 with respect to the tip portion 34 in the in-plane direction (second direction y). Although not shown, the second electrode 212 of the second switching element 21B also includes an extension region 212A that similarly protrudes from the second conductive member 30B. When viewed along the thickness direction z, the minimum dimension d2 of the extension region 212A (the dimension in the second direction y in the semiconductor device A10) is not less than 0.1 mm and not more than 0.2 mm.

[0040] 15, the tip portion 34 has a warped surface 341. The warped surface 341 is connected to the first bonding surface 321 of the first bonding portion 32, and is inclined with respect to the first bonding surface 321. When viewed along the in-plane direction (first direction x), the warped surface 341 forms an inclination angle α2 with respect to the first bonding surface 321.

[0041] When viewed along the thickness direction z, the ratio of the total area of ​​the first joint portion 32 and the tip portion 34 (excluding the opening area of ​​the first opening 322) to the area of ​​either of the second electrodes 212 of the pair of semiconductor elements 21 is 50% or more and 90% or less.

[0042] As shown in FIG. 3, FIG. 10, and FIG. 11, the second joint 35 is electrically joined to either the second main surface 121 of the second die pad 12 or the covering portion 15A of the second input terminal 15. The second joint 35 of the first conductive member 30A is electrically joined to the second main surface 121 and is parallel to the second main surface 121. In the semiconductor device A10, the second joint 35 of the first conductive member 30A includes two regions located apart from each other in the first direction x. The second joint 35 of the second conductive member 30B is electrically joined to the covering portion 15A and is parallel to the covering portion 15A. As shown in FIG. 16, the second joint 35 has a second joint surface 351 and a second opening 352. The second joint surface 351 faces either the second main surface 121 or the covering portion 15A. The second opening 352 penetrates the second joint 35 in the thickness direction z. 12 and 13, the second opening 352 has a circular shape when viewed in the thickness direction z. The opening area of ​​the second opening 352 is 0.25 mm 2 That's all.

[0043] As shown in FIG. 7, FIG. 8, FIG. 10, FIG. 12, and FIG. 13, the second connecting portion 36 connects the main body portion 31 and the second bonding portion 35. When viewed along the in-plane direction (first direction x), the second connecting portion 36 of the first conductive member 30A is inclined in a direction away from the second main surface 121 of the second die pad 12 as it moves from the second bonding portion 35 toward the main body portion 31. When viewed along the in-plane direction (second direction y), the second connecting portion 36 of the second conductive member 30B is inclined in a direction away from the covering portion 15A of the second input terminal 15 as it moves from the second bonding portion 35 toward the main body portion 31. As shown in FIG. 16, the second connecting portion 36 has a second inclined surface 361. The second inclined surface 361 is connected to the second bonding surface 351 of the second bonding portion 35 and is inclined with respect to the second bonding surface 351.

[0044] As shown in FIG. 3 and FIG. 8, the third joint 37 is electrically joined to one of the upper electrodes 221 of the pair of protection elements 22. The third joint 37 of the first conductive member 30A is electrically joined to the upper electrode 221 of the first diode 22A. The third joint 37 of the second conductive member 30B is electrically joined to the upper electrode 221 of the second diode 22B. The third joint 37 is parallel to one of the upper electrodes 221 of the pair of protection elements 22. As shown in FIG. 12 and FIG. 13, the third joint 37 is connected to the first connecting portion 33. As shown in FIG. 18, the third joint 37 has a third joint surface 371 and a third opening 372. The third joint surface 371 faces one of the upper electrodes 221 of the pair of protection elements 22. The third joint surface 371 is connected to the first inclined surface 331 of the first connecting portion 33. As a result, when viewed along the in-plane direction (first direction x), the first inclined surface 331 forms an inclination angle α1 with respect to the third joint surface 371. The third opening 372 penetrates the third joint portion 37 in the thickness direction z. As shown in FIG. 17 , the third opening 372 has a circular shape when viewed along the thickness direction z. The opening area of ​​the third opening 372 is 0.25 mm 2 That's all.

[0045] As shown in FIG. 7, FIG. 12, and FIG. 13, the tip 38 is located away from the first connecting portion 33 and is connected to the third joint portion 37. In the in-plane direction (second direction y), the tip 38 is located on the opposite side of the first connecting portion 33 with respect to the third joint portion 37. As shown in FIG. 18, as viewed along the in-plane direction (first direction x), the tip 38 is inclined in a direction away from one of the upper electrodes 221 of the pair of protection elements 22 as it moves away from the third joint portion 37. As shown in FIG. 17, the upper electrode 221 of the first diode 22A includes an extended region 221A protruding from the first conductive member 30A on the opposite side of the third joint portion 37 with respect to the tip 38 in the in-plane direction (second direction y). Although not shown, the upper electrode 221 of the second diode 22B also includes an extended region 221A protruding from the second conductive member 30B in a similar manner.

[0046] 18, the tip portion 38 has a warped surface 381. The warped surface 381 is connected to the third bonding surface 371 of the third bonding portion 37, and is inclined with respect to the third bonding surface 371. When viewed along the in-plane direction (first direction x), the warped surface 381 forms an inclination angle α3 with respect to the third bonding surface 371.

[0047] As shown in FIG. 7 and FIG. 15, the first bonding layer 24 includes a portion located between the second electrode 212 of each of the pair of semiconductor elements 21 and the first bonding portion 32 of either the first conductive member 30A or the second conductive member 30B. The first bonding layer 24 has electrical conductivity. The first bonding layer 24 is, for example, a lead-free solder. Alternatively, the first bonding layer 24 may be a lead solder. The first bonding layer 24 electrically bonds each of the first conductive member 30A and the second conductive member 30B to either the second electrode 212 of the pair of semiconductor elements 21. Therefore, the first bonding portion 32 of the first conductive member 30A is electrically bonded to the second electrode 212 of the first switching element 21A by the first bonding layer 24. The first bonding portion 32 of the second conductive member 30B is electrically bonded to the second electrode 212 of the second switching element 21B by the first bonding layer 24.

[0048] 15, the first bonding layer 24 is in contact with a first bonding surface 321 of the first bonding portion 32 of each of the first conductive member 30A and the second conductive member 30B. Furthermore, the first bonding layer 24 is also in contact with an inner peripheral surface of the first bonding portion 32 that defines the first opening 322 of the first bonding portion 32. Therefore, the first bonding layer 24 includes a portion that penetrates into the first opening 322. The thickness t of the first bonding portion 32 is 0.1 mm or more, and the maximum thickness T of the first bonding layer 24 is 0.1 mm or more. max Here, the maximum thickness T max does not include the portion of the first bonding layer 24 that penetrates into the first opening 322. max is greater than the thickness of each of the pair of semiconductor elements 21.

[0049] As shown in FIG. 15, when viewed along the in-plane direction (first direction x), the first bonding layer 24 has a fillet 241 extending from the second electrode 212 of the first switching element 21A to the first conductive member 30A and inclined with respect to the second electrode 212. Although not shown, the fillet 241 is also formed in the first bonding layer 24 including a portion located between the second electrode 212 of the second switching element 21B and the first bonding portion 32 of the second conductive member 30B. The description here is directed to the fillet 241 formed in the first bonding layer 24 including a portion located between the second electrode 212 of the first switching element 21A and the first bonding portion 32 of the first conductive member 30A. As shown in FIG. 15, the fillet 241 has a first edge 241A in contact with the second electrode 212 of the first switching element 21A and a second edge 241B in contact with the first conductive member 30A. As shown in Fig. 14, the first edge 241A is located outward from the second edge 241B when viewed along the thickness direction z. Furthermore, when viewed along the thickness direction, the first edge 241A is located closer to the outer edge (the edge on the right side in Fig. 14) of the first switching element 21A than the second edge 241B. In the semiconductor device A10, the second edge 241B is in contact with the warped surface 341 of the tip portion 34. When viewed along the in-plane direction (first direction x), the inclination angle β1 that the fillet 241 makes with respect to the second electrode 212 of the first switching element 21A is smaller than the inclination angle α2 that the warped surface 341 makes with respect to the first bonding surface 321 of the first bonding portion 32.

[0050] As shown in FIG. 8 and FIG. 16, the second bonding layer 25 includes a portion located between the second main surface 121 of the second die pad 12 and the second bonding portion 35 of the first conductive member 30A, and is in contact with the second bonding surface 351 of the second bonding portion 35. The second bonding layer 25 has electrical conductivity. The second bonding layer 25 is, for example, a lead-free solder. Alternatively, the second bonding layer 25 may be a lead solder. The second bonding layer 25 electrically bonds the first conductive member 30A and the second main surface 121. Therefore, the second bonding portion 35 of the first conductive member 30A is electrically bonded to the second main surface 121 by the second bonding layer 25. Furthermore, as shown in FIG. 10 and FIG. 11, the second bonding layer 25 includes a portion located between the covering portion 15A of the second input terminal 15 and the second bonding portion 35 of the second conductive member 30B, and is in contact with the second bonding portion 35. The second bonding layer 25 electrically bonds the second conductive member 30B and the covering portion 15A. Therefore, the second bonding portion 35 of the second conductive member 30B is electrically bonded to the covering portion 15A by the second bonding layer 25. As shown in FIG. 16, the second bonding layer 25 is also in contact with the inner circumferential surface of the second bonding portion 35 that defines the second opening 352 of the second bonding portion 35. Therefore, the second bonding layer 25 includes a portion that penetrates into the second opening 352.

[0051] As shown in FIG. 8 and FIG. 18, the third bonding layer 26 includes a portion located between each upper electrode 221 of the pair of protection elements 22 and the third bonding portion 37 of either the first conductive member 30A or the second conductive member 30B. The third bonding layer 26 has electrical conductivity. The third bonding layer 26 is, for example, a lead-free solder. Alternatively, the third bonding layer 26 may be a lead solder. The third bonding layer 26 electrically bonds each of the first conductive member 30A and the second conductive member 30B to either the upper electrode 221 of the pair of protection elements 22. Therefore, the third bonding portion 37 of the first conductive member 30A is electrically bonded to the upper electrode 221 of the first diode 22A by the third bonding layer 26. The third bonding portion 37 of the second conductive member 30B is electrically bonded to the upper electrode 221 of the second diode 22B by the third bonding layer 26.

[0052] 18, the third bonding layer 26 is in contact with a third bonding surface 371 of the third bonding portion 37 of each of the first conductive member 30A and the second conductive member 30B. Furthermore, the third bonding layer 26 is in contact with an inner circumferential surface of the third bonding portion 37 that defines a third opening 372 of the third bonding portion 37. Therefore, the third bonding layer 26 includes a portion that penetrates into the third opening 372.

[0053] As shown in FIG. 18, when viewed along the in-plane direction (first direction x), the third bonding layer 26 has a fillet 261 extending from the upper electrode 221 of the first diode 22A to the first conductive member 30A and inclined with respect to the upper electrode 221. Although not shown, the fillet 261 is also formed in the third bonding layer 26 including a portion located between the upper electrode 221 of the second diode 22B and the third bonding portion 37 of the second conductive member 30B. The description here is directed to the fillet 261 formed in the third bonding layer 26 including a portion located between the upper electrode 221 of the first diode 22A and the third bonding portion 37 of the first conductive member 30A. As shown in FIG. 18, the fillet 261 has a first edge 261A in contact with the upper electrode 221 of the first diode 22A and a second edge 261B in contact with the first conductive member 30A. 17, the first edge 261A is located outward from the second edge 261B when viewed along the thickness direction z. In the semiconductor device A10, the second edge 261B is in contact with the warped surface 381 of the tip portion 38. When viewed along the in-plane direction (first direction x), the inclination angle β2 that the fillet 261 makes with respect to the top electrode 221 of the first diode 22A is smaller than the inclination angle α3 that the warped surface 381 makes with respect to the third bonding surface 371 of the third bonding portion 37.

[0054] As shown in FIG. 3, the pair of gate wires 41 includes a first gate wire 41 (for example, the gate wire 41 on the right side) and a second gate wire 41 (for example, the gate wire 41 on the left side). The first gate wire 41 is electrically connected to the third electrode 213 (see FIG. 14) of one of the pair of semiconductor elements 21 and the covering portion 161A of the first gate terminal 161. The second gate wire 41 is electrically connected to the third electrode 213 of the other of the pair of semiconductor elements 21 and the covering portion 162A of the second gate terminal 162. As a result, the first gate terminal 161 is electrically connected to the third electrode 213 of the first switching element 21A, and the second gate terminal 162 is electrically connected to the third electrode 213 of the second switching element 21B. The composition of each gate wire 41 includes gold, but the present disclosure is not limited thereto. For example, the composition of each gate wire 41 may include copper or aluminum (Al).

[0055] As shown in FIG. 3, the pair of detection wires 42 includes a first detection wire 42 (for example, the right detection wire 42) and a second detection wire 42 (for example, the left detection wire 42). The first detection wire 42 is electrically connected to the second electrode 212 (see FIG. 14) of one of the pair of semiconductor elements 21 and the covering portion 171A of the first detection terminal 171. The second detection wire 42 is electrically connected to the second electrode 212 of the other of the pair of semiconductor elements 21 and the covering portion 172A of the second detection terminal 172. As a result, the first detection terminal 171 is electrically connected to the second electrode 212 of the first switching element 21A, and the second detection terminal 172 is electrically connected to the second electrode 212 of the second switching element 21B. The composition of each detection wire 42 includes gold, but the present disclosure is not limited thereto. For example, the composition of each detection wire 42 may include copper or aluminum.

[0056] As shown in FIG. 3 and FIG. 7 to FIG. 10, the sealing resin 50 covers the semiconductor elements 21, the protective elements 22, the first conductive member 30A, and the second conductive member 30B. The sealing resin 50 also covers a part of the first die pad 11 and a part of the second die pad 12. The sealing resin 50 has electrical insulation properties. The sealing resin 50 is made of a material containing, for example, a black epoxy resin. The sealing resin 50 has a top surface 51, a bottom surface 52, a pair of first side surfaces 53, a pair of second side surfaces 54, a plurality of recesses 55, and a groove portion 56.

[0057] 7 to 10, the top surface 51 faces the same side as the first main surface 111 of the first die pad 11 in the thickness direction z. As shown in Fig. 7 to 10, the bottom surface 52 faces the opposite side to the top surface 51 in the thickness direction z. As shown in Fig. 4, the first back surface 112 of the first die pad 11 and the second back surface 122 of the second die pad 12 are exposed to the outside at the bottom surface 52.

[0058] As shown in Figs. 2, 4 and 6, the pair of first side surfaces 53 are spaced apart from each other in the first direction x. Each first side surface 53 is connected to a top surface 51 and a bottom surface 52. As shown in Fig. 5, an exposed portion 13B of the first input terminal 13, an exposed portion 14B of the output terminal 14, and an exposed portion 15B of the second input terminal 15 are exposed from one of the first side surfaces 53. Furthermore, an exposed portion 161B of the first gate terminal 161, an exposed portion 162B of the second gate terminal 162, an exposed portion 171B of the first detection terminal 171, and an exposed portion 172B of the second detection terminal 172 are exposed from the first side surface 53.

[0059] 2, 4, and 5, the pair of second side surfaces 54 are spaced apart from each other in the second direction y. Each second side surface 54 is connected to the top surface 51 and the bottom surface 52.

[0060] As shown in FIG. 2, FIG. 4, and FIG. 5, each of the multiple recesses 55 is recessed from the first side surface 53 (the first side surface 53 from which multiple terminals including the first input terminal 13 protrude) in the first direction x and extends from the top surface 51 to the bottom surface 52 in the thickness direction z. In the illustrated example, four recesses 55 are provided, but the present disclosure is not limited thereto. The first recess 55 (for example, the recess 55 on the right side in FIG. 2) of the four recesses 55 is located between the first input terminal 13 and the first detection terminal 171 in the second direction y. The second recess 55 is located between the first input terminal 13 and the second input terminal 15, the third recess 55 is located between the output terminal 14 and the second input terminal 15, and the fourth recess 55 (the recess 55 on the left side in FIG. 2) is located between the output terminal 14 and the second detection terminal 172. By providing a plurality of recesses 55 in this manner, the creepage distance (measured along the surface of the sealing resin 50) of the sealing resin 50 between two desired terminals can be increased. For example, the plurality of recesses 55 can increase the creepage distance of the sealing resin 50 between two terminals among the first input terminal 13, the output terminal 14, the second input terminal 15, the first detection terminal 171, and the second detection terminal 172, compared to when these recesses are not provided. Similarly, the creepage distance of the sealing resin 50 between any of the first gate terminal 161 and the second gate terminal 162 and any of the first input terminal 13, the output terminal 14, and the second input terminal 15 can be relatively increased. This is preferable for improving the dielectric strength of the semiconductor device A10.

[0061] As shown in FIG. 4, FIG. 6, and FIG. 9 to FIG. 11, the groove 56 is recessed from the bottom surface 52 in the thickness direction z and extends long along the second direction y. The groove 56 has two ends spaced apart in the second direction y, and each end is connected to a corresponding one of the pair of second side surfaces 54. The groove 56 can lengthen the creeping distance of the sealing resin 50 between the first die pad 11 and one of the seven terminals (the first input terminal 13, the output terminal 14, the second input terminal 15, the first gate terminal 161, the second gate terminal 162, the first detection terminal 171, and the second detection terminal 172). Similarly, the groove 56 can lengthen the creeping distance of the sealing resin 50 between the second die pad 12 and one of the seven terminals. This is preferable for improving the dielectric strength of the semiconductor device A10.

[0062] Next, the effects of the semiconductor device A10 will be described.

[0063] The semiconductor device A10 includes a conductive member (first conductive member 30A) having a main body 31, a first joint 32, a first coupling portion 33 and a tip portion 34, and a first joint layer 24 that electrically joins the conductive member to an electrode (second electrode 212) of a semiconductor element 21 (first switching element 21A). When viewed along an in-plane direction (first direction x in the semiconductor device A10), the tip portion 34 is inclined in a direction away from the electrode of the semiconductor element 21 as it moves away from the first joint 32. Furthermore, when viewed along the thickness direction z, the electrode of the semiconductor element 21 includes an extension region 212A that protrudes from the tip portion 34 on the opposite side to the first joint 32 with respect to the tip portion 34 in the in-plane direction (second direction y in the semiconductor device A10). 15, the first bonding layer 24 creeps up onto the warped surface 341 of the tip portion 34, and a fillet 241 having a relatively large volume is formed in the first bonding layer 24. When viewed along the in-plane direction (first direction x in the semiconductor device A10), the inclination angle β1 that the fillet 241 makes with respect to the electrode of the semiconductor element 21 is relatively small. The formation of such a fillet 241 can reduce the concentration of thermal stress acting on the interface between the electrode of the semiconductor element 21 and the first bonding layer 24. Therefore, the semiconductor device A10 can accommodate a larger current while mitigating the thermal stress acting on the semiconductor element 21.

[0064] When viewed along an in-plane direction (first direction x in the semiconductor device A10), the inclination angle β1 that the fillet 241 makes with respect to the electrode of the semiconductor element 21 is smaller than the inclination angle α2 that the warped surface 341 of the tip portion 34 makes with respect to the first bonding surface 321 of the first bonding portion 32. When this relationship is established, the shape of the fillet 241 becomes suitable for reducing the thermal stress concentration acting on the interface between the electrode of the semiconductor element 21 and the first bonding layer 24.

[0065] When viewed along an in-plane direction (first direction x in the semiconductor device A10), the first connecting portion 33 is inclined in a direction away from the first main surface 111 of the first die pad 11 from the first bonding portion 32 toward the main body portion 31. When viewed along the thickness direction z, a boundary 332 between the first bonding surface 321 of the first bonding portion 32 and the first inclined surface 331 of the first connecting portion 33 is located inside the periphery of the semiconductor element 21. As a result, fillets 241 are formed in the first bonding layer 24 at both ends of the electrode of the semiconductor element 21 in the in-plane direction (second direction y in the semiconductor device A10). Therefore, it is possible to more effectively reduce the thermal stress concentration acting on the interface between the electrode of the semiconductor element 21 and the first bonding layer 24. In this case, when viewed along an in-plane direction (first direction x in semiconductor device A10), the magnitude of the inclination angle α1 of the first inclined surface 331 relative to the first bonding surface 321 is greater than or equal to 30° and less than or equal to 60°, which results in a shape of the fillet 241 suitable for alleviating the thermal stress concentration.

[0066] The thickness t of the first bonding portion 32 is the maximum thickness T max This makes it possible to reduce the concentration of thermal stress acting on the interface between the first bonding layer 24 and the first bonding portion 32 while ensuring the thermal durability of the first bonding layer 24.

[0067] The first bonding portion 32 has a first opening 322 penetrating in the thickness direction z. When the first bonding portion 32 is electrically bonded to the electrode of the semiconductor element 21 by the first bonding layer 24, the provision of the first opening 322 allows air bubbles contained in the molten first bonding layer 24 to be released to the outside. Furthermore, the first bonding layer 24 is in contact with the inner circumferential surface of the first bonding portion 32 that defines the first opening 322. This provides the molten first bonding layer 24 with a self-alignment effect that aligns the position of the first bonding portion 32 with respect to the electrode of the semiconductor element 21.

[0068] The conductive member contains copper, which reduces the electrical resistance of the conductive member compared to wires containing aluminum, which is suitable for passing a larger current through the semiconductor element 21.

[0069] The composition of the first die pad 11 includes copper. Furthermore, the thickness T1 of the first die pad 11 is a maximum thickness t max This makes it possible to increase the efficiency of heat conduction in the in-plane direction while improving the thermal conductivity of the first die pad 11. This contributes to improving the heat dissipation of the semiconductor device A10.

[0070] A semiconductor device A20 according to a second embodiment of the present disclosure will be described with reference to Figs. 19 to 21. In these figures, elements that are the same as or similar to those of the semiconductor device A10 described above are given the same reference numerals, and duplicated descriptions will be omitted. Here, Fig. 19 is seen through the sealing resin 50 for ease of understanding. In Fig. 19, the see-through sealing resin 50 is shown by imaginary lines.

[0071] In the semiconductor device A20, the configuration of the second electrodes 212 of the pair of semiconductor elements 21 and the configuration of the first bonding portions 32 of the first conductive members 30A and the second conductive members 30B are different from those of the semiconductor device A10 described above.

[0072] As shown in FIG. 19, the second electrode 212 of each semiconductor element 21 includes a pair of regions spaced apart from each other in the first direction x. The first joint portion 32 of each of the first conductive member 30A and the second conductive member 30B includes a pair of regions spaced apart from each other in the first direction x. As shown in FIG. 20 and FIG. 21, the pair of regions of the first joint portion 32 of the first conductive member 30A are individually and electrically joined to the pair of regions of the second electrode 212 of the first switching element 21A by the first bonding layer 24. Similarly, the pair of regions of the first joint portion 32 of the second conductive member 30B are individually and electrically joined to the pair of regions of the second electrode 212 of the second switching element 21B by the first bonding layer 24.

[0073] Next, the effects of the semiconductor device A20 will be described.

[0074] The semiconductor device A20 includes a conductive member (first conductive member 30A) having a main body 31, a first joint 32, a first connection portion 33, and a tip portion 34, and a first joint layer 24 that electrically joins the conductive member and an electrode (second electrode 212) of a semiconductor element 21 (first switching element 21A). When viewed along an in-plane direction (first direction x in the semiconductor device A10), the tip portion 34 is inclined in a direction away from the electrode of the semiconductor element 21 as it moves away from the first joint 32. Furthermore, when viewed along the thickness direction z, the electrode of the semiconductor element 21 includes an extension region 212A that protrudes from the tip portion 34 on the opposite side to the first joint 32 with respect to the tip portion 34 in the in-plane direction (second direction y in the semiconductor device A10). Therefore, the semiconductor device A20 can also accommodate a larger current and relieve thermal stress acting on the semiconductor element 21. Furthermore, the semiconductor device A20 can also provide operational effects other than those provided by the semiconductor device A10.

[0075] The present disclosure is not limited to the above-described embodiment. The specific configuration of each part of the present disclosure can be freely designed in various ways.

[0076] The semiconductor device and the method for manufacturing the semiconductor device provided by the present disclosure include those described in the following appendices.

[0077] Appendix 1. a first die pad having a first main surface facing in a thickness direction; a semiconductor element having an electrode provided on a side facing the first main surface in the thickness direction and bonded to the first main surface; a conductive member electrically connected to the electrode; a first bonding layer that electrically bonds the conductive member and the electrode; the conductive member has a main body, a first bonding portion electrically bonded to the electrode by the first bonding layer, a first connecting portion connecting the main body and the first bonding portion, and a tip portion located away from the first connecting portion and connected to the first bonding portion; When viewed along an in-plane direction of the first main surface, the tip portion is inclined in a direction away from the electrode as the tip portion moves away from the first joint portion, A semiconductor device, wherein, when viewed along the thickness direction, the electrode includes an extension region that protrudes from the conductive member on a side opposite the first joint portion relative to the tip portion in the in-plane direction.

[0078] Appendix 2. 2. The semiconductor device according to claim 1, wherein each of the first die pad and the conductive member contains copper.

[0079] Appendix 3. 3. The semiconductor device according to claim 1, wherein the first bonding layer contains tin.

[0080] Appendix 4. When viewed along the in-plane direction, a fillet is formed in the first bonding layer, the fillet extending from the electrode to the conductive member and being inclined with respect to the electrode, the fillet has a first edge in contact with the electrode and a second edge in contact with the conductive member; 4. The semiconductor device according to claim 3, wherein the first edge is positioned outward from the second edge when viewed along the thickness direction.

[0081] Appendix 5. the first bonding portion has a bonding surface facing the electrode and in contact with the first bonding layer, the tip portion has a warped surface that is connected to the joining surface and is inclined with respect to the joining surface, 5. The semiconductor device according to claim 4, wherein, when viewed along the in-plane direction, an inclination angle of the fillet with respect to the electrode is smaller than an inclination angle of the warped surface with respect to the bonding surface.

[0082] Appendix 6. 6. The semiconductor device according to claim 5, wherein the second edge is in contact with the warped surface.

[0083] Appendix 7. 7. The semiconductor device according to claim 5, wherein, when viewed along the in-plane direction, the first connecting portion is inclined in a direction away from the first main surface the further from the first joint portion toward the main body portion.

[0084] Appendix 8. the first connecting portion has an inclined surface that is connected to the joint surface and is inclined with respect to the joint surface, 8. The semiconductor device according to claim 7, wherein, when viewed along the thickness direction, a boundary between the bonding surface and the inclined surface is located inward from a periphery of the semiconductor element.

[0085] Appendix 9. 9. The semiconductor device according to claim 8, wherein an inclination angle of the inclined surface with respect to the bonding surface when viewed along the in-plane direction is 30° or more and 60° or less.

[0086] Appendix 10. 10. The semiconductor device according to any one of claims 3 to 9, wherein the thickness of the first bonding portion is equal to or less than twice the maximum thickness of the first bonding layer.

[0087] Appendix 11. The first joint portion has an opening penetrating in the thickness direction, 11. The semiconductor device according to claim 3, wherein the first bonding layer is in contact with an inner circumferential surface of the first bonding portion that defines the opening.

[0088] Appendix 12. 12. The semiconductor device according to claim 1, wherein a thickness of the first die pad is greater than a maximum thickness of the conductive member.

[0089] Appendix 13. a second die pad having a second main surface facing the same side as the first main surface in the thickness direction and positioned away from the first die pad in the in-plane direction; a second bonding layer electrically bonding the conductive member and the second main surface, the conductive member has a second bonding portion electrically bonded to the second main surface by the second bonding layer, and a second connecting portion connecting the main body portion and the second bonding portion, the second die pad comprises copper; 13. The semiconductor device according to any one of claims 1 to 12, wherein the second bonding layer contains tin.

[0090] Appendix 14. The semiconductor device of claim 13, wherein, when viewed along the in-plane direction, the second connecting portion is inclined in a direction away from the second main surface the further from the second joint portion toward the main body portion.

[0091] Appendix 15. 15. The semiconductor device according to claim 13, wherein a thickness of the second die pad is greater than a maximum thickness of the conductive member.

[0092] Appendix 16. a sealing resin that covers a portion of each of the first die pad and the second die pad, the semiconductor element, and the conductive member; the first die pad has a first back surface facing a side opposite to the first main surface in the thickness direction, the second die pad has a second back surface facing a side opposite to the second main surface in the thickness direction, 16. The semiconductor device according to any one of claims 13 to 15, wherein the first back surface and the second back surface are exposed from the sealing resin.

[0093] Appendix 17. 17. The semiconductor device according to claim 1, wherein the semiconductor element includes a compound semiconductor substrate.

[0094] Appendix 18. 18. The semiconductor device according to claim 17, wherein the compound semiconductor substrate contains silicon carbide. [Explanation of symbols]

[0095] A10, A20: Semiconductor device 11: First die pad 111: First main surface 112: First back surface 12: second die pad 121: second main surface 122: 2nd rear 13: 1st input terminal 13A: Covered portion 13B: Exposed portion 14: Output terminal 14A: Covering part 14B: exposed part 15: second input terminal 15A: Covered portion 15B: Exposed portion 161: First gate terminal 161A: Covering portion 161B: exposed portion 162: second gate terminal 162A: Covered part 162B: Exposed part 171: First detection terminal 171A: Covering portion 171B: exposed part 172: second detection terminal 172A: Covered part 172B: Exposed part 21: Semiconductor element 21A: First switching element 21B: second switching element 211: first electrode 212: Second electrode 212A: Extension region 213: third electrode 22: protective element 22A: First diode 22B: Second diode 221: Upper electrode 221A: Extension area 222: Lower electrode 23: Die bonding layer 24: First bonding layer 241: Fillet 241A: First edge 241B: Second edge 25: Second bonding layer 26: Third bonding layer 261: Fillet 261A: First edge 261B: second edge 30A: first conductive member 30B: second conductive member 31: main body 32: 1st joint part 321: 1st joint surface 322: First opening 33: First connecting part 331: First slope 332: Boundary 34: Tip 341: Warped surface 35: Second joint part 351: Second joint surface 352:Second opening 36:Second connection part 361: 2nd slope 37: 3rd joint 371: Third joint surface 372: Third opening 38: Tip 381: Warped surface 41: Gate wire 42: Detection wire 50: Sealing resin 51: Top surface 52: Bottom 53: First side 54: Second side 55: Recess 56: Groove z: Thickness direction x: 1st direction y: 2nd direction

Claims

1. a first die pad having a first main surface facing in a thickness direction; a semiconductor element having an electrode provided on a side facing the first main surface in the thickness direction and bonded to the first main surface; a conductive member electrically connected to the electrode; a first bonding layer that electrically bonds the conductive member and the electrode; the conductive member has a main body portion, a first bonding portion electrically bonded to the electrode by the first bonding layer, a first connecting portion connecting the main body portion and the first bonding portion, and a tip portion located away from the first connecting portion and connected to the first bonding portion; When viewed along an in-plane direction of the first main surface, the tip portion is inclined in a direction away from the electrode as the tip portion moves away from the first joint portion, A semiconductor device, wherein, when viewed along the thickness direction, the electrode includes an extension region that protrudes from the conductive member on a side opposite the first joint portion relative to the tip portion in the in-plane direction.

2. The semiconductor device according to claim 1 , wherein each of the first die pad and the conductive member contains copper.

3. The semiconductor device according to claim 1 , wherein the first bonding layer contains tin.

4. When viewed along the in-plane direction, a fillet is formed in the first bonding layer, the fillet extending from the electrode to the conductive member and being inclined with respect to the electrode, the fillet has a first edge in contact with the electrode and a second edge in contact with the conductive member; The semiconductor device according to claim 3 , wherein the first edge is positioned outward from the second edge when viewed along the thickness direction.

5. the first bonding portion has a bonding surface facing the electrode and in contact with the first bonding layer, the tip portion has a warped surface that is connected to the joining surface and is inclined with respect to the joining surface, 5. The semiconductor device according to claim 4, wherein an inclination angle of the fillet relative to the electrode when viewed along the in-plane direction is smaller than an inclination angle of the warped surface relative to the bonding surface.

6. The semiconductor device according to claim 5 , wherein the second edge is in contact with the warped surface.

7. 7 . The semiconductor device according to claim 5 , wherein the first coupling portion is inclined in a direction away from the first main surface as it goes from the first joint portion toward the main body portion when viewed along the in-plane direction.

8. the first connecting portion has an inclined surface that is connected to the joint surface and is inclined with respect to the joint surface, The semiconductor device according to claim 7 , wherein a boundary between the bonding surface and the inclined surface is located inward from a periphery of the semiconductor element when viewed along the thickness direction.

9. 9. The semiconductor device according to claim 8, wherein an inclination angle of the inclined surface with respect to the bonding surface is equal to or greater than 30 degrees and is equal to or smaller than 60 degrees when viewed along the in-plane direction.

10. 10. The semiconductor device according to claim 3, wherein the thickness of the first bonding portion is equal to or less than twice the maximum thickness of the first bonding layer.

11. 11. The semiconductor device according to claim 1, wherein a thickness of said first die pad is greater than a maximum thickness of said conductive member.

12. a second die pad having a second main surface facing the same side as the first main surface in the thickness direction and positioned away from the first die pad in the in-plane direction; a second bonding layer electrically bonding the conductive member and the second main surface, the conductive member has a second joint portion electrically joined to the second main surface by the second bonding layer, and a second connection portion connecting the main body portion and the second joint portion, the second die pad contains copper; The semiconductor device according to claim 1 , wherein the second bonding layer contains tin.

13. The semiconductor device according to claim 12 , wherein the second coupling portion is inclined in a direction away from the second main surface as it goes from the second joint portion toward the main body portion when viewed along the in-plane direction.

14. The semiconductor device according to claim 12 , wherein a thickness of the second die pad is greater than a maximum thickness of the conductive member.

15. a sealing resin that covers a portion of each of the first die pad and the second die pad, the semiconductor element, and the conductive member; the first die pad has a first back surface facing a side opposite to the first main surface in the thickness direction, the second die pad has a second back surface facing a side opposite to the second main surface in the thickness direction, 15. The semiconductor device according to claim 12, wherein the first back surface and the second back surface are exposed from the sealing resin.

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