Purging spindle arms to prevent deposition and wafer sliding

Abstract

To provide a purging system to prevent deposition on spindle arms in a processing chamber of a substrate processing system.SOLUTION: A system includes a plurality of spindle arms 204-1 to 204-4 located above a plurality of stations 202-1 to 202-4 in a processing chamber 200 to transport a semiconductor substrate between the stations. The spindle arms reside in the processing chamber during processing of the semiconductor substrate. The system comprises a plurality of gas lines 230. The gas lines include a first gas line arranged below the stations to supply a purge gas, and a second gas line extending upwards from the first gas line to supply the purge gas to the spindle arms during the processing of the semiconductor substrate in the processing chamber.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This disclosure is a PCT International Application of U.S. Patent Application No. 62 / 949,205, filed December 17, 2019. The disclosures of the above-referenced applications are hereby incorporated by reference in their entireties.

[0002] Technical Field The present disclosure relates generally to substrate processing systems, and more particularly to a purge system for preventing deposition on a spindle arm in a processing chamber of a substrate processing system. [Background technology]

[0003] The "Background" discussion provided herein is intended to generally present the context of the present disclosure. To the extent described in the "Background" section of the present disclosure, the work of the inventors named herein, as well as aspects of the present disclosure that may not be considered prior art at the time of filing, are not admitted, expressly or impliedly, as prior art to the present disclosure.

[0004] A substrate processing system typically includes multiple processing chambers (also referred to as process modules) for performing deposition, etching, and other processing of substrates, such as semiconductor wafers. Examples of processes that may be performed on a substrate include, but are not limited to, plasma-enhanced chemical vapor deposition (PECVD) processes, chemically enhanced plasma vapor deposition (CEPVD) processes, and sputtering physical vapor deposition (PVD) processes. Additional examples of processes that may be performed on a substrate include, but are not limited to, etching (e.g., chemical etching, plasma etching, reactive ion etching, etc.), and cleaning processes.

[0005] During processing, a substrate is placed on a substrate support, such as a pedestal, electrostatic chuck (ESC), etc., in a processing chamber of a substrate processing system. During deposition, a gas mixture containing one or more precursors is introduced into the processing chamber and a plasma is generated to activate a chemical reaction. During etching, a gas mixture containing an etching gas is introduced into the processing chamber and a plasma is generated to activate a chemical reaction. Typically, a computer-controlled robot transfers the substrates from one processing chamber to another in the order in which the substrates are processed. Summary of the Invention

[0006] The system includes a plurality of spindle arms positioned above a plurality of stations within a processing chamber to transport a semiconductor substrate between the stations. The spindle arms reside within the processing chamber during processing of the semiconductor substrate. The system includes a first gas line disposed below the stations for supplying a purge gas. The system includes a second gas line extending upward from the first gas line for supplying a purge gas to the spindle arms during processing of the semiconductor substrate in the processing chamber.

[0007] In another feature, the system further comprises a channel disposed near a top of each station, the channel in fluid communication with one of the second gas lines and including an outlet for supplying purge gas to one of the spindle arms.

[0008] In another feature, the system further comprises a connection assembly for sealingly connecting the channel to one of the second gas lines.

[0009] In another feature, the connection assembly includes an orifice for controlling the flow of purge gas into the channel.

[0010] In another feature, the system further comprises a channel disposed near a top of each station, the channel being in fluid communication with one of the second gas lines and including an outlet near each end of the channel to supply purge gas to two spindle arms located on either side of the channel.

[0011] In another feature, the system further comprises a liner lining an upper portion of each station, the liner comprising a channel.

[0012] In another feature, the second gas line is disposed about the station.

[0013] In another feature, the system further comprises a source that supplies a purge gas to the first gas line through a regulator that regulates a flow rate of the purge gas to the first gas line.

[0014] In another feature, the system further comprises a controller for controlling a process being performed on the semiconductor substrate, controlling the spindle arm during the process to transfer the semiconductor substrate between the stations, and controlling a flow rate of a purge gas supplied to the first gas line.

[0015] In another feature, the system further comprises a spindle located at a center of the processing chamber to move the spindle arm laterally across the stations disposed about the center.

[0016] In yet another feature, the system includes a plurality of gas lines arranged in a plane around a base portion of the N stations, where N is an integer greater than 2. The N stations are arranged around a center of a processing chamber for processing semiconductor substrates. The system includes N liners lining respective outer edges of a top portion of the N stations. Each of the N liners includes a channel extending outwardly from the outer edge parallel to the plane and in fluid communication with the plurality of gas lines. The channel is disposed along the outer edge, has closed first and second ends proximate the center of the processing chamber, and includes an outlet at each of the first and second ends to distribute gas laterally away from the outer edge. The system includes N spindle arms for transporting the semiconductor substrate between the N stations. Each of the N spindle arms extends laterally from a spindle at the center of the processing chamber parallel to the plane, is disposed between two adjacent ones of the N liners, and includes regions that contact the semiconductor substrate during transport. These regions are proximate to the outlets of the channels of the two adjacent ones of the N liners. The system includes N vertical gas lines disposed around the N stations, respectively, each of the N vertical gas lines in fluid communication with a plurality of gas lines and channels of the N liners, respectively.

[0017] In other features, each of the N vertical gas lines is sealingly connected to a corresponding channel via an inlet to a corresponding one of the N liners, the inlet having an orifice in fluid communication with the corresponding channel.

[0018] In other features, the inlet includes a connection to a corresponding one of the N vertical gas lines, an O-ring surrounding an orifice of the inlet sealingly connecting the orifice to a corresponding channel, and a number of notches for aligning the inlet with a corresponding one of the N liners.

[0019] In other features, each of the channels includes a plurality of outlets, and a region of each of the N spindle arms that contacts the semiconductor substrate is proximate to the plurality of outlets of the channels of corresponding two adjacent ones of the N liners.

[0020] In other features, the multiple gas lines are interconnected using a connection assembly, each of the connection assemblies including a first portion connected to a first gas line of the multiple gas lines, a second portion connected to a second gas line of the multiple gas lines, an O-ring sealingly connecting the first portion and the second portion, and a plurality of vented screws disposed around the O-ring and fastening the first portion and the second portion. The first gas line and the second gas line are in fluid communication via the first portion and the second portion.

[0021] In other features, each of the N vertical gas lines is positioned away from the vertical path of movement of the semiconductor substrate at each of the N stations.

[0022] In other features, the plurality of gas lines are connected to a source of gas located external to the processing chamber, and the system further includes a pressure regulator disposed external to the processing chamber to regulate a flow rate of gas from the source to the plurality of gas lines.

[0023] In other features, outlets of the channels of the N liners output gas to regions of the N spindle arms during processing of the semiconductor substrate.

[0024] In other features, outlets of the channels of the N liners output gas to the region of the N spindle arms, where the gas prevents or reduces deposition of material on the region of the N spindle arms during processing of a semiconductor substrate.

[0025] In other features, the system further comprises a controller for controlling a process being performed on the semiconductor substrate, controlling the N spindle arms during the process to transfer the semiconductor substrate between the N stations, and controlling a flow rate of a purge gas supplied to the plurality of gas lines. The outlets of the channels of the N liners output gas to the regions of the N spindle arms to prevent or reduce deposition of materials used in the process on the regions of the N spindle arms.

[0026] In yet another feature, the method includes routing a plurality of gas lines around the bottom of a plurality of stations of a processing chamber. The stations are arranged around a spindle located at a center of the processing chamber. The spindle has a spindle arm between the tops of the stations to transfer the semiconductor substrate between the stations. The method includes extending a vertical gas line from a portion of the plurality of gas lines to the top of each station at a periphery of each station. The method includes disposing a channel in a liner aligned with an outer edge of the top of each station. The channel is in fluid communication with the vertical gas line, is semicircular, is closed at both ends proximate the center of the processing chamber, and includes a plurality of outlets at both ends for distributing gas to adjacent ones of the spindle arms. The method includes supplying gas to the channel through the plurality of gas lines during processing of the semiconductor substrate.

[0027] In another feature, the method further includes distributing a gas from the channel into the spindle arm to prevent or reduce deposition of material on the spindle arm during processing of the semiconductor substrate.

[0028] In another feature, the method further includes controlling a flow rate of gas supplied to the plurality of gas lines.

[0029] In another feature, the gas comprises an inert or non-reactive gas.

[0030] In other features, the method further includes controlling a process being performed on the semiconductor substrate, controlling a spindle arm during the process to transfer the semiconductor substrate between the stations, controlling a flow rate of gas supplied to a plurality of gas lines during the process, and distributing gas from a channel to the spindle arm to prevent or reduce deposition of material used in the process on the spindle arm.

[0031] Further areas of applicability of the present disclosure will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are for illustrative purposes only and are not intended to limit the scope of the disclosure.

[0032] The present disclosure will become more fully understood from the detailed description and the accompanying drawings, wherein: [Brief description of the drawings]

[0033] [Figure 1] FIG. 1 illustrates an example of a substrate processing system including a processing chamber.

[0034] [Diagram 2] FIG. 2 illustrates an example of a processing chamber that includes multiple stations.

[0035] [Diagram 3] FIG. 3 shows a cross-sectional view of the processing chamber of FIG.

[0036] [Figure 4] FIG. 4 shows a spindle arm used to transfer substrates between the stations of FIG.

[0037] [Diagram 5] FIG. 5 shows another example of a processing chamber that includes multiple stations.

[0038] [Figure 6]FIG. 6 shows gas lines of a purge system of the present disclosure that may be used in the processing chambers of FIGS.

[0039] [Figure 7] FIG. 7 shows the gas line interconnections.

[0040] [Figure 8] FIG. 8 shows an example of an inlet for a liner that is part of the purge system and station shown in FIGS.

[0041] [Figure 9] FIG. 9 shows an example of a surface mount assembly used to interconnect multiple elements or sections of a gas line.

[0042] [Figure 10] FIG. 10 shows top and bottom views of one of the liners.

[0043] [Figure 11] FIG. 11 shows top and bottom views of one of the liners in greater detail.

[0044] [Figure 12] FIG. 12 shows a channel in one of the liners that is used to distribute purge gas onto the spindle arm to prevent the buildup of deposition material on the spindle arm.

[0045] [Figure 13] FIG. 13 shows various elements or sections of the gas lines and their interconnection assemblies. [Figure 14] FIG. 14 shows various elements or sections of the gas lines and their interconnection assemblies.

[0046] [Figure 15] FIG. 15 shows the construction details of one of the interconnect assemblies.

[0047] [Figure 16] FIG. 16 shows details of the inlet configuration that supplies purge gas from the gas line to the channels in the liner for purging the spindle arm.

[0048] [Figure 17] FIG. 17 shows the construction details of another interconnect assembly.

[0049] [Figure 18] FIG. 18 shows a flow chart of a method for purging a spindle arm during wafer processing. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0050] In the drawings, reference numbers may be reused to identify similar and / or identical elements.

[0051] In a ring-less wafer transfer system, a spindle arm can be used to transfer a wafer between stations in a process module. The spindle arm present in the process module can accumulate deposition material from the deposition process performed in the process module. In a process module that deposits a slippery film on a wafer, after deposition material accumulates on the spindle arm for a period of time, the wafer can slip off the spindle arm while the spindle arm indexes between stations. The accumulation of deposition material on the spindle arm over time limits the batch size of the process module, which significantly impacts throughput. The present disclosure provides a purge system that can generate a concentrated purge around the wafer contact point on the spindle arm. The purge system prevents or reduces the accumulation of deposition material on the spindle arm and prevents the wafer from slipping.

[0052] The ringless wafer transfer system comprises a spindle arm located between two adjacent stations in a processing module. The spindle arm can move over a pedestal. Lift pins transfer the wafer from the pedestal to the spindle arm. The spindle arm can then index the wafer from one station to another station in the processing module. The spindle arm can be present in the processing module. The spindle arm is exposed to a deposition process performed on the wafer in the processing module. Thus, a film deposited on the wafer can also be deposited on the spindle arm during the deposition process. After the accumulation of slippery film on the spindle arm, the wafer being carried by the spindle arm can slip off the spindle arm during the indexing movement. In most cases, the wafer slipping off can result in the wafer being damaged or the wafer being discarded. Moreover, in most cases, the processing module needs to be opened to retrieve the wafer, which causes significant downtime. One way to stave off the problem of wafer slippage is to reduce the batch size, which impacts the throughput of the tool.

[0053] The present disclosure generally provides a purge system for introducing purge gas onto the contact pads of the spindle arm to prevent deposition on the contact pads of the spindle arm. Alternatively, the purge system can also introduce purge gas onto the entire spindle arm to prevent deposition on the spindle arm. The purge system can reduce or mitigate the risk of wafer slippage. Purging is performed during the deposition process, i.e., purging is performed while deposition on the wafer is in progress. The purge gas can be any inert gas. For example, argon can be used as the purge gas.

[0054] The purge gas can enter the processing chamber through an opening or inlet of the processing chamber using a custom seal. The flow rate of the purge gas can be adjusted using a pressure regulator. The inlet to the processing chamber can have an orifice. By controlling the pressure and the orifice size, the flow rate of the purge gas into the processing chamber can be controlled.

[0055] The purge gas can be evenly distributed to the stations in the processing chamber using a network of gas lines in the processing chamber. The gas lines can be interconnected using an interconnect assembly with custom designed seals. The purge gas can then flow into a liner / filler plate surrounding each station. The inlet to the liner can have orifices to evenly distribute the gas among the stations of the processing chamber. The liner can have an internal channel therein that takes the purge gas from one inlet and directs it to four outlets (called purge orifices) that are centered around the wafer contact point of the spindle arm. For example, the gas lines and liner can be made of aluminum. The liner can be manufactured using, for example, a friction stir welding process.

[0056] Notably, the purge system may be independent of the recipe and chemistry used for deposition of the wafer. That is, the purge process using the purge gas may prevent or reduce deposition on the spindle arm independent of the recipe and chemistry used to deposit the material on the wafer. Furthermore, the purge process prevents or reduces deposition on the spindle arm independent of the pressure and temperature used in the processing chamber during wafer deposition. The purge process may be performed during deposition of the wafer. For example, the gas lines run under the lift pin ring at each station. Therefore, the gas lines do not interfere with the movement of the lift pins.

[0057] The present disclosure is organized as follows: First, an example processing chamber is shown and described with reference to Figure 1. Then, various layouts and constructions of a purge system according to the present disclosure are shown and described with reference to Figures 2-9. Then, additional views and construction details of various elements of the purge system are shown and described with reference to Figures 10-17. A method of purging a spindle arm during wafer processing is shown and described with reference to Figure 18.

[0058] 1 illustrates an example of a substrate processing system 100 that includes a process chamber 102. Although the example is described in the context of plasma-enhanced chemical vapor deposition (PECVD), the teachings of the present disclosure may be applied to other types of substrate processing, such as atomic layer deposition (ALD), plasma-enhanced ALD (PEALD), CVD, or other processes including etch processes. The system 100 includes a process chamber 102 that surrounds the other components of the system 100 and contains an RF plasma (if used). The process chamber 102 includes an upper electrode 104 and an electrostatic chuck (ESC) 106 or other substrate support. During operation, a substrate 108 is positioned on the ESC 106.

[0059] For example, the upper electrode 104 may include a gas distribution apparatus 110, e.g., a showerhead, for introducing and distributing process gases. The gas distribution apparatus 110 may include a stem portion including one end that is connected to the upper surface of the processing chamber 102. The base portion of the showerhead is generally cylindrical and extends radially outward from the opposite end of the stem portion at a location spaced apart from the upper surface of the processing chamber 102. The substrate-facing surface or faceplate of the showerhead base portion includes a number of holes through which vaporized precursors, process gases, or purge gases flow. Alternatively, the upper electrode 104 may include a conductive plate, and the process gases may be introduced in another manner.

[0060] The ESC 106 includes a base plate 112 that functions as a bottom electrode. The base plate 112 supports a heating plate 114, which may correspond to a ceramic multi-zone heating plate. A thermal resistance layer 116 may be disposed between the heating plate 114 and the base plate 112. The base plate 112 may include one or more channels 118 for flowing a coolant through the base plate 112.

[0061] If a plasma is used, the RF generating system 120 generates and outputs an RF voltage to one of the upper electrode 104 and the lower electrode (e.g., the base plate 112 of the ESC 106). The other of the upper electrode 104 and the base plate 112 may be DC grounded, AC grounded, or floating. By way of example only, the RF generating system 120 may include an RF generator 122 that generates RF power, which is supplied to the upper electrode 104 or the base plate 112 by a matching and distribution network 124. In other examples, the plasma may be generated inductively or remotely.

[0062] Gas delivery system 130 includes one or more gas sources 132-1, 132-2, ..., and 132-N (collectively, gas sources 132), where N is an integer greater than zero. Gas sources 132 are connected to manifold 140 by valves 134-1, 134-2, ..., and 134-N (collectively, valves 134) and mass flow controllers 136-1, 136-2, ..., and 136-N (collectively, mass flow controllers 136). Vapor delivery system 142 supplies vaporized precursors to manifold 140, which is connected to process chamber 102, or to a separate manifold (not shown). The output of manifold 140 is supplied to process chamber 102.

[0063] A temperature controller 150 may be connected to a number of thermal control elements (TCEs) 152 disposed within the heating plate 114. The temperature controller 150 may be used to control the number of TCEs 152 to control the temperature of the ESCs 106 and the substrate 108. The temperature controller 150 may be in communication with a coolant assembly 154 to control the flow of coolant through the channels 118. For example, the coolant assembly 154 may include a coolant pump, a reservoir, and one or more temperature sensors (not shown). The temperature controller 150 operates the coolant assembly 154 to selectively flow coolant through the channels 118 to cool the ESCs 106. A valve 156 and a pump 158 may be used to evacuate reactants from the processing chamber 102. A system controller 160 controls the components of the system 100.

[0064] The lift pins are held by lift pin holders disposed on a lift pin ring (shown and described with reference to FIG. 3 below) and are used to enable delivery and removal of the substrate 108 from the processing chamber 102 using a robotic arm (e.g., a spindle arm, described below). Typically, the upper ends of the lift pins are flush with or below the upper surface of the substrate support assembly 106. During delivery or removal of the substrate, the lift pins are raised relative to the upper surface of the substrate support assembly 106 to raise the substrate 108 and provide clearance between the substrate 108 and the substrate support assembly 106. The clearance between the substrate 108 and the substrate support assembly 106 allows for the insertion or removal of an end effector of the robotic arm.

[0065] FIG. 2 illustrates an example of a process chamber 200 including multiple stations. For example, the process chamber 200 includes four stations 202-1, 202-2, 202-3, and 202-4 (collectively, the multiple stations 202; or synonymously, the stations 202). In general, the process chamber 200 may include more than one station 202. The process chamber 200 includes multiple spindle arms. For example, since the process chamber 200 includes four stations 202, the process chamber 200 includes four spindle arms 204-1, 204-2, 204-3, and 204-4 (collectively, the multiple spindle arms 204; or synonymously, the spindle arm 204). The spindle 205 drives the spindle arm 204. A controller (e.g., the controller 160 shown in FIG. 1) controls the spindle 205 and the spindle arm 204.

[0066] Each station 202 includes a liner lining the upper outer edge of the station 202 along a plane parallel to the plane in which the wafer resides within the station 202 during processing. For example, since the processing chamber 200 includes four stations 202, the processing chamber 200 includes four liners 206-1, 206-2, 206-3, and 206-4 (collectively, liners 206). Each liner 206 includes a channel for gas flow (shown as element 207 in FIG. 12). Each liner 206 includes an inlet in fluid communication with the channel for receiving a purge gas. The liners 206, also referred to as filler plates, are shown in detail in FIGS. 10-12.

[0067] Each station 202 includes an inlet having an orifice in fluid communication with an inlet of the liner 206 to supply purge gas into the liner 206 (i.e., into the channels of the liner 206). For example, station 202 includes inlets 208-1, 208-2, 208-3, and 208-4 (collectively, inlets 208) that each supply purge gas into the liner 206. Inlets 208 are shown in detail in FIGS. 8 and 16.

[0068] A channel in each liner 206 serves two spindle arms 204. The channels are embedded in the liner 206 as shown in FIG. 12. The channels are shown as elements 207 in FIG. 12. Thus, one could say that each channel serves two spindle arms 204. The terms channel and liner can be used interchangeably when describing the delivery of purge gas through the liner 206 to the spindle arms 204.

[0069] The channel in each liner 206 is semicircular, closed at both ends, and has four outlets (shown in detail in Figures 4 and 6) that deliver purge gas to the two spindle arms 204. The channel in each liner 206 includes two halves: a front half that extends from the inlet (or from the inlet 208) to a first end of the liner 206 (or of the channel), and a back half that extends from the inlet (or from the inlet 208) to a second end of the liner 206 (or of the channel).

[0070] In each liner 206 (i.e., each channel), a first set of two outlets is located in a first half of the liner 206 (or channel) on a first side of the inlet 208, and a second set of two outlets is located in a second half of the liner 106 (or channel) on a second side of the inlet 208. Each of the first and second sets of outlets may include one outlet or multiple outlets.

[0071] In each liner 206 (i.e., in each channel), a first set of two outlets located in the first half of the liner 206 outputs purge gas to one side of the first spindle arm 204 adjacent to the first half of the liner 206. In each liner 206 (i.e., in each channel), a second set of two outlets located in the second half of the liner 206 outputs purge gas to one side of the second spindle arm 204 adjacent to the second half of the liner 206.

[0072] For example, in liner 206-1, a first set of two outlets outputs purge gas to a first side of spindle arm 204-1 adjacent to the first half of liner 206-1, and a second set of two outlets outputs purge gas to a first side of spindle arm 204-4 adjacent to the second half of liner 206-1.

[0073] In liner 206-2, a first set of two outlets outputs purge gas to a second side of spindle arm 204-1 adjacent to the first half of liner 206-2, and a second set of two outlets outputs purge gas to a first side of spindle arm 204-2 adjacent to the second half of liner 206-2.

[0074] In liner 206-3, a first set of two outlets outputs purge gas to a second side of spindle arm 204-2 adjacent to the first half of liner 206-3, and a second set of two outlets outputs purge gas to a first side of spindle arm 204-3 adjacent to the second half of liner 206-3.

[0075] In liner 206-4, a first set of two outlets outputs purge gas to a second side of spindle arm 204-3 adjacent to the first half of liner 206-4, and a second set of two outlets outputs purge gas to a second side of spindle arm 204-4 adjacent to the second half of liner 206-4.

[0076] A plurality of gas lines 230 (detailed in FIGS. 6, 7, 13, and 14) are distributed throughout the bottom region of station 202 to distribute purge gas to liner 206 (i.e., to channels in liner 206). Processing chamber 200 includes an inlet 210 through which gas lines 230 receive purge gas from an external source of purge gas. Inlet 210 is sealed at the bottom wall of processing chamber 200 using a custom seal. Inlet 210 is connected to a source of purge gas located outside processing chamber 200 (e.g., one or more of elements 132 shown in FIG. 1).

[0077] Inlet 210 is connected to a source of purge gas through a valve and pressure regulator collectively shown as 212. Element 212 is connected to the source of purge gas through one or more selectable connections. For example, two such selectable connections are shown generally at 213 that may be used to select a different purge gas (e.g., argon or other non-reactive gas). The valve and pressure regulator can be used to control the flow rate of purge gas through inlet 210 and into gas line 230. Alternatively, instead of using a valve, pressure regulator, and inlet 212, a mass flow controller (MFC), such as element 136 shown in FIG. 1, can be used to control the flow rate.

[0078] In the example shown in FIG. 2, the stations 202 are also numbered from 1 to 4. The inlet 210 is shown to be located under station 3, by way of example only. Alternatively, the inlet 210 can be located under any other station, or the inlet 210 can be any aperture / hole anywhere in the process chamber 200. Furthermore, by way of example only, the connection or routing of the gas line 230 is shown as from station 3 to station 4, and from station 3 to station 2 to station 1. In the example shown in FIG. 2, by way of example only, the gas line 230 starts from the inlet 210 at station 3 and ends at station 4. The gas line 230 starts at station 3 and ends at station 1. In other words, in the example shown in FIG. 2, by way of example only, the gas line 230 includes two branches extending from the inlet 210 and station 3. The first branch extends from station 3 to station 4, and the second branch extends from station 3 to station 1.

[0079] However, the connections or routing of the gas lines 230 may differ from that shown in FIG. 2. For example, FIG. 5 shows another example of the connections or routing of the gas lines 230 from station 3, to station 2, to station 1, to station 4. Thus, the inlets 210 of the gas lines 230 into the process chamber 200 may be located under any of the stations 202, and the manner in which the gas lines 230 are connected or routed between the stations 202 may vary. For example, the gas lines 230 may be connected or routed to the stations 202 in series or with one or more branches. Thus, the design or distribution of the gas lines 230 is modular and flexible.

[0080] FIG. 3 shows a cross-sectional view of the processing chamber 200 and additional details of the stations 202. Each station 202 includes a lift pin ring and three lift pins. For example, station 202-2 includes a lift pin ring 250 and three lift pins 252-1, 252-2, and 252-3 (collectively, lift pins 252). Although lift pin ring 250 and lift pins 252 are identified in only one station 202-2, it is understood that each station 202 includes a lift pin ring similar to lift pin ring 250 and lift pins similar to lift pin 252. Gas lines 230 (shown in detail in FIGS. 6 and 7) are distributed throughout the bottom region of the stations 202 in a plane parallel to and below the plane of the lift pin ring 250, which is parallel to the plane in which the wafer resides in each of the stations 202 during processing.

[0081] FIG. 4 shows the spindle arm 204 in more detail. By way of example only, spindle arm 204-1 is shown. It is understood that each spindle arm 204 includes elements similar to those shown and described with reference to spindle arm 204-1. Liners 206-2 and 206-1 deliver purge gas to spindle arm 204-1. Two of the four outlets (also called purge orifices) of liner 206-2 that supply purge gas to spindle arm 204-1 are identified as elements 260-1 and 260-2. Two additional outlets of the four outlets (also called purge orifices) of liner 206-1 that supply purge gas to spindle arm 204-1 are not visible in this view. These outlets 260-1, 260-2, etc. of each liner 206 are collectively referred to as outlets or purge orifices 260.

[0082] Each spindle arm 204 includes four contact points that contact the wafer. The number of contact points on a spindle arm can vary. In this view, only two of the four contact points on spindle arm 204-1 are visible. The two contact points are identified as elements 262-1 and 262-2. As shown, two outlets 260-1 and 260-2 on liner 206-2 are located adjacent to two contact points 262-1 and 262-2, respectively, on spindle arm 204-1. Similarly, two outlets on liner 206-1, not visible in this view, are also located adjacent to two other contact points on spindle arm 204-1, not visible in this view.

[0083] Thus, four outlets of two liners 206 (e.g., in the illustrated example, liners 206-1 and 206-2) from two adjacent stations 202 (e.g., in the illustrated example, stations 202-2 and 202-1) are located adjacent to the four contact points of each spindle arm 204. Generally speaking, the four outlets or purge orifices 260 of the two adjacent liners 206 supply purge gas to the spindle arm 204 proximate to the four contact points 262 of the spindle arm 204.

[0084] 5 shows a top view of the processing chamber 200 and illustrates a different example than that shown in FIG. 2. In this example, the connections or routing of the gas lines 230 are different than in FIG. 2. For example, the gas lines 230 are connected or routed from station 3 to station 2 to station 1 to station 4. In this example, the gas lines 230 begin at the inlet 210 at station 3 and terminate at station 4. In FIG. 5, as in the example of FIG. 2, the gas lines 230 lie in a plane below the plane in which the lift pin ring 250 lies, which is parallel to the plane in which the wafer lies at each station 202 during processing.

[0085] FIG. 6 shows the gas lines 230 in detail. For ease of illustration, only one outlet 260 is depicted at each station 202. However, the designation shown, for example, as " / 4", indicates that there are four outlets 260 at each station 202, as described with reference to FIG. 4 above. FIG. 6 shows only one exemplary configuration of the gas lines 230 corresponding to the connections or routing of the gas lines 230 shown in FIG. 5. Non-limiting examples of other configurations or variations include the following. For example, the inlet 210 may be moved from station 3 to any other station. For example, the branch associated with station 4 may be moved above the branch associated with station 3 (as shown in the example shown in FIG. 2). These examples are not mutually exclusive. That is, both the inlet 210 and the branch associated with station 202 may be moved to a different location than shown.

[0086] Figure 7 shows in greater detail the interconnections of gas lines 230. Again, Figure 7 shows only one example configuration of gas lines 230 corresponding to the connections or routing of gas lines 230 shown in Figure 5. As discussed with reference to Figure 6 above, other additional configurations are possible and contemplated, including the example shown in Figure 2.

[0087] As shown, gas lines 230 are distributed throughout the stations 202, at and around the bottom region of the stations 202. The gas lines 230 lie in a plane parallel to the plane in which the lift pin ring 250 and wafers lie. In each station 202, a portion of the gas line 230 runs vertically (i.e., perpendicular to the plane in which the lift pin ring 250 and wafers lie) and mates with (i.e., is sealingly connected to) an inlet 208 in the liner 206. The structure of the inlet 208 is shown and described in detail with reference to Figures 8 and 16 below.

[0088] The gas line 230 includes multiple elements or sections interconnected using surface mount assemblies 290, which are shown and described in detail below with reference to Figures 9 and 13-15. An additional interconnect assembly 300 that is used to interconnect elements or sections of the gas line 230 at corners (where the gas line 230 turns at a sharp angle) is shown in Figure 17.

[0089] FIG. 8 shows an example of an inlet 208 for a liner 206. As described above, each station 202 includes one liner 206 and one inlet 208 for the liner 206. The structure of each inlet 208 is as shown in FIG. 8. The inlet 208 includes a connection 280 to a portion of the gas line 230 that extends vertically upward from the bottom of the gas line 230. The inlet 208 includes an orifice 282 that is fluidly connected to a channel of the liner 206. The orifice 282 mates with the inlet 209 of the channel 207 shown in FIG. 12. The inlet 208 includes an O-ring 284 that surrounds the orifice 282. The O-ring 284 mates with the liner 206 (i.e., the inlet 209 of the channel 207) and forms an airtight seal with the liner 206 (i.e., the inlet 209 of the channel 207). The inlet 208 includes a notch 286 for alignment with the liner 206. An additional view of the inlet 208 is shown in FIG.

[0090] 9 illustrates an example of a surface mount assembly 290 used to interconnect multiple elements or sections of a gas line 230. The surface mount assembly 290 includes an upper portion 292 and a lower portion 294. The upper portion 292 and the lower portion 294 each include a connection to an element or section of the gas line 230. The upper portion 292 and the lower portion 294 each include an orifice 295 for fluidly connecting the connected gas lines 230 using the surface mount assembly 290. The upper portion 292 mates (i.e., hermetically connects) with the lower portion 294 via an O-ring 296, which forms an airtight seal between the upper portion 292 and the lower portion 294.

[0091] Additionally, the upper portion 292 is secured to the lower portion 294 using a number of screws 298. The screws 298 are positioned around and encircle the O-ring 296. The screws 298 are vented screws to avoid any trapping of purge gas. In another example of a surface mount assembly 290 connecting the inlet 210 to the gas line 230, the upper portion 292 includes two connections, a first connection to the inlet 210 and a second connection to an element or section of the gas line 230. A further view of the surface mount assembly 290 is shown in FIG.

[0092] The type of material used for the O-ring 296 may depend on the temperature of the surface mount assembly 290. The temperature of the surface mount assembly 290 may vary depending on factors including the process temperature, the pedestal set point temperature, the emissivity of the pedestal, etc. For example, an O-ring 296 made of a polymer may be used when the temperature of the surface mount assembly 290 is less than about 300 degrees Celsius, and an O-ring 296 made of a metal or alloy may be used when the temperature of the surface mount assembly 290 is greater than about 300 degrees Celsius. The O-ring 284 shown in FIG. 8 may be made of a similar material as the O-ring 296. However, the O-ring 284 does not heat up as much as the O-ring 296 because the heat from the O-ring 284 is absorbed faster than the heat from the O-ring 296.

[0093] In use, while a wafer is being processed (e.g., using a deposition process) at station 202, a controller (e.g., controller 160 shown in FIG. 1 ) controls the flow rate of purge gas supplied to gas line 230 by controlling valves and pressure regulators indicated at 212. The purge gas is delivered by outlet 260 in liner 206 to spindle arm 204 generally, and more specifically to contact point 262 of spindle arm 204. The purge gas prevents or reduces deposition of material being deposited on the wafer, generally on spindle arm 204, and more specifically on contact point 262 of spindle arm 204.

[0094] 10-17 provide additional details and views of liner 206 , channels 207 within liner 206 , gas lines 230 and their interconnections, including interconnection elements 290 and 300 , and inlet 208 .

[0095] Figures 10-12 show various views and details of the liners 206. Figure 10 shows a top view and a bottom view of one of the liners 206. The outlets 260 for distributing purge gas to the spindle arms 204 are visible in the top view. Figure 11 shows top and bottom views of one of the liners 206 in more detail. The channel 207 shown in Figure 12 is seen in cross section AA in Figure 11. Detail B of the bottom view of the liner 206 in Figure 11 shows a portion of the inlet 208. As mentioned above, Figure 12 shows the channel 207 and the inlet 209 into the channel 207. The inlet 208 of the liner 206 mates with the inlet 209 of the channel 207 as mentioned above.

[0096] 13 and 14 show various elements or sections of gas line 230 and their interconnection assemblies 290 and 300. Figures 13 and 14 also show inlet 210 which receives purge gas from an external source, and inlet 208 in liner 206 which supplies purge gas to channels 207 in liner 206, as described above.

[0097] Figure 15 shows structural details of interconnect assembly 290, also shown in Figure 7. Figure 16 shows structural details of inlet 208, also shown in Figure 8. Figure 17 shows structural details of interconnect assembly 300, also shown in Figure 7. Interconnect assembly 300 includes orifices 300 for fluidly connecting gas lines 230 connected using interconnect assembly 300.

[0098] FIG. 18 illustrates a flow chart of a method 400 for purging a spindle arm during wafer processing. For example, the method 400 may be performed by the controller 160 illustrated in FIG. 1. At 402, the method 400 begins processing a wafer in a processing chamber comprising a plurality of stations and further comprising a spindle arm for transferring the wafer between the stations during processing. At 404, the method 400 supplies an inert gas through a gas line routed around the station to a channel in a liner lining the upper periphery of the station. At 406, the method 400 controls a flow rate of the inert gas supplied to the gas line. At 408, the method 400 controls the spindle arm to transfer the wafer between the stations during wafer processing. At 410, the method 400 distributes the inert gas from an outlet in the channel to a spindle arm located between the upper portions of the stations. At 412, the method 400 distributes an inert gas from the channel to the spindle arm during wafer processing to prevent material from depositing on the spindle arm during wafer processing.

[0099] The foregoing description is merely exemplary in nature and is not intended to limit the disclosure, its application, or uses. The broad teachings of the disclosure can be embodied in various forms. Thus, while the disclosure includes specific examples, other modifications will become apparent upon study of the drawings, the specification, and the following claims, and the true scope of the disclosure should not be so limited. It should be understood that one or more steps in a method may be performed in a different order (or simultaneously) without altering the principles of the disclosure. Furthermore, although each of the embodiments is described above as having certain features, any one or more of these features described with respect to any embodiment of the disclosure may be implemented in any of the other embodiments and / or combined with features of any of the other embodiments, even if the combinations are not explicitly described. In other words, the described embodiments are not mutually exclusive, and permutations of one or more of the embodiments with one another remain within the scope of the disclosure.

[0100] Spatial and functional relationships between elements (e.g., between modules, circuit elements, semiconductor layers, etc.) are described using various terms including "connected," "engaged," "coupled," "adjacent," "next to," "on," "above," "below," and "disposed." Unless expressly described as "direct," when a relationship between a first element and a second element is described in the disclosure above, the relationship may be a direct relationship where there are no other intervening elements between the first element and the second element, but it may also be an indirect relationship where one or more intervening elements (either spatially or functionally) exist between the first element and the second element. As used herein, the phrase at least one of A, B, and C should be interpreted to mean a logical non-exclusive OR (A OR B OR C), and not to mean "at least one of A, at least one of B, and at least one of C."

[0101] In some implementations, the controller is part of a system that may be part of the embodiments described above. Such systems may include semiconductor processing equipment, including processing tool(s), chamber(s), processing platform(s), and / or specific processing components (wafer pedestal, gas flow system, etc.). These systems may be integrated with electronics for controlling pre-, during, and post-processing operations of semiconductor wafers or substrates. The electronics may be referred to as a "controller" that may control various components or subparts of the system(s). The controller may be programmed to control any process disclosed herein, including delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow settings, fluid delivery settings, position and operation settings, wafer transfer to and from tools and other transport tools and / or load locks connected or interfaced with the particular system, depending on the processing requirements and / or type of system.

[0102] Broadly speaking, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software to receive instructions, issue instructions, control operations, enable cleaning operations, and enable endpoint measurements. Integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files) that define operational parameters for performing a particular process on or for a semiconductor wafer or for a system. In some embodiments, the operational parameters may be part of a recipe defined by a process engineer to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0103] In some implementations, the controller may be part of or coupled to a computer that is embedded in, coupled to, or networked to the system, or a combination thereof. For example, the controller may be in the "cloud" or all or part of a fab host computer system, which may allow remote access of wafer processing. The computer may allow remote access to the system to monitor the current progress of a manufacturing operation, examine the history of past manufacturing operations, examine trends or performance indicators from multiple manufacturing operations, modify parameters of a current process, set up processing steps following the current process, or initiate a new process.

[0104] In some examples, a remote computer (e.g., a server) can provide the process recipe to the system over a network, which may include a local network or the Internet. The remote computer can include a user interface that allows for entry or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters can be specific to the type of process being performed and the type of tool the controller is configured to interface with or control.

[0105] Thus, as discussed above, the controller may be distributed, for example, by having one or more individual controllers that are networked together and directed to a common purpose, such as the process or control described herein. An example of a distributed controller for such a purpose may be one or more integrated circuits on the chamber in communication with one or more remotely located integrated circuits (e.g., at the platform level or as part of a remote computer) that combine to control the process in the chamber.

[0106] Without being limited thereto, exemplary systems may include a plasma etch chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing system that may be associated with or used in the fabrication and / or manufacturing of semiconductor wafers.

[0107] As described above, depending on the process step or steps being performed by the tool, the controller may communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a main computer, another controller, or tools used in material transport to and from wafer containers to and from tool locations and / or load ports within a semiconductor manufacturing factory.

Claims

1. 1. A system comprising: a plurality of spindle arms positioned above a plurality of stations within a processing chamber for transporting semiconductor substrates between said stations, said spindle arms being present within said processing chamber while said semiconductor substrates are being processed; a plurality of first gas lines disposed beneath the station for supplying a purge gas; a plurality of second gas lines extending upwardly from the plurality of first gas lines, the plurality of second gas lines for supplying the purge gas to the spindle arm while processing the semiconductor substrate in the processing chamber.

2. 2. The system of claim 1, further comprising a channel disposed near a top of each of the stations, the channel in fluid communication with one of the plurality of second gas lines and including an outlet for supplying the purge gas to one of the plurality of spindle arms.

3. 3. The system of claim 2, further comprising a connection assembly for connecting the channel to the one second gas line of the plurality of second gas lines.

4. The system of claim 3 , wherein the connection assembly comprises an orifice for controlling the flow of the purge gas into the channel.

5. 2. The system of claim 1, further comprising a channel disposed near a top of each of the stations, the channel being in fluid communication with one of the plurality of second gas lines and including an outlet near each end of the channel, for supplying the purge gas to two spindle arms of the plurality of spindle arms located on each side of the channel.

6. 3. The system of claim 2, further comprising a liner lining the upper portion of each of the stations, the liner including the channel.

7. 2. The system of claim 1, wherein the plurality of second gas lines are disposed about the station.

8. 10. The system of claim 1, further comprising a source that supplies the purge gas to the plurality of first gas lines through a regulator that regulates a flow rate of the purge gas to the plurality of first gas lines.

9. 2. The system of claim 1, Controlling a process performed on the semiconductor substrate; controlling the plurality of spindle arms to transfer the semiconductor substrate between the stations during the process; The system further comprises a controller for controlling a flow rate of the purge gas supplied to the plurality of first gas lines.

10. 2. The system of claim 1, further comprising a spindle located at a center of the processing chamber for moving the plurality of spindle arms laterally across the stations disposed about the center.

11. 1. A system comprising: a plurality of gas lines arranged in a plane around a base portion of N stations, the N stations being arranged around a center of a processing chamber for processing semiconductor substrates, N being an integer greater than 2; N liners respectively lining an outer periphery of a top of the N stations, each of the N liners extending outwardly from the outer periphery parallel to the plane and including channels in fluid communication with the plurality of gas lines, the channels disposed along the outer periphery and having closed first and second ends proximate the center of the processing chamber, the channels including outlets at each of the first and second ends for distributing gas laterally away from the outer periphery; N spindle arms for transferring the semiconductor substrate between the N stations, each of the N spindle arms extending laterally parallel to the plane from a spindle at the center of the processing chamber and disposed between two adjacent ones of the N liners, the N spindle arms including an area contacting the semiconductor substrate during the transfer, the area being proximate to the outlet of the channel of the two adjacent ones of the N liners; N vertical gas lines respectively positioned around the N stations, each of the N vertical gas lines being in fluid communication with the plurality of gas lines and the channels of the N liners, respectively.

12. 12. The system of claim 11, wherein each of the N vertical gas lines is connected to a corresponding channel via an inlet to a corresponding one of the N liners, the inlet having an orifice in fluid communication with the corresponding channel.

13. 13. The system of claim 12, wherein the inlet comprises: a connection to a corresponding one of the N vertical gas lines; an O-ring surrounding the orifice of the inlet, connecting the orifice to the corresponding channel; a plurality of notches for aligning the inlet with the corresponding one of the N liners.

14. 12. The system of claim 11, each of said channels includes a plurality of said outlets; the region of each of the N spindle arms that contacts the semiconductor substrate is proximate to the outlets of the channels of corresponding two adjacent liners of the N liners.

15. 12. The system of claim 11, wherein the plurality of gas lines are interconnected using connection assemblies, each of the connection assemblies comprising: a first portion connected to a first gas line of the plurality of gas lines; a second portion connected to a second gas line of the plurality of gas lines; an O-ring connecting the first portion and the second portion; a plurality of bent screws disposed around the O-ring and fastening the first portion and the second portion; the first gas line and the second gas line are in fluid communication via the first portion and the second portion.

16. 12. The system of claim 11, wherein each of the N vertical gas lines is positioned away from a vertical path of movement of the semiconductor substrate at each of the N stations.

17. 12. The system of claim 11, wherein the plurality of gas lines are connected to a source of the gas located outside the processing chamber, the system further comprising: The system further comprises a pressure regulator disposed external to the processing chamber to regulate the flow of the gas from the source to the plurality of gas lines.

18. 12. The system of claim 11, wherein the outlets of the channels of the N liners output the gas to the region of the N spindle arms during processing of the semiconductor substrate.

19. 12. The system of claim 11, wherein the outlets of the channels of the N liners output the gas to the region of the N spindle arms, the gas preventing or reducing deposition of material on the region of the N spindle arms during processing of the semiconductor substrate.

20. 12. The system of claim 11, Further comprising a controller, The controller: Controlling a process performed on the semiconductor substrate; controlling the N spindle arms during the process to transfer the semiconductor substrate between the N stations; Controlling the flow rate of a purge gas supplied to the plurality of gas lines; The outlets of the channels of the N liners output the gas to the areas of the N spindle arms to prevent or reduce deposition of materials used in the process on the areas of the N spindle arms.

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