Display device
The display device incorporates a wavelength conversion substrate with a high thermal conductivity heat transfer layer to address heat dissipation challenges, ensuring efficient thermal management and maintaining performance.
Patent Information
- Application Number
- JP2023184968
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2023-10-27
- Publication Date
- 2025-05-13
AI Technical Summary
Display devices using light emitting elements face challenges with heat dissipation, leading to potential thermal degradation of components and reduced performance.
A wavelength conversion substrate is designed with a transparent substrate, a partition wall layer, functional layers including wavelength conversion layers, and a heat transfer layer. The heat transfer layer has higher thermal conductivity than the functional layers and is light-transmitting at the positions of the first through holes, allowing for efficient heat dissipation.
The display device achieves excellent heat dissipation properties, reducing the risk of thermal degradation and maintaining performance, especially in high-luminance applications where heat management is critical.
Smart Images

Figure 2025073851000001_ABST
Abstract
Description
[Technical field]
[0001] The present invention relates to a display device. [Background technology]
[0002] 2. Description of the Related Art In display devices, light-emitting elements such as light-emitting diodes are used, for example, as light sources of backlight units or as components of pixels or sub-pixels (see Patent Documents 1 and 2). [Prior art documents] [Patent documents]
[0003] [Patent Document 1] JP 2000-131683 A [Patent Document 2] JP 2009-244383 A Summary of the Invention [Problem to be solved by the invention]
[0004] An object of the present invention is to provide a display device with excellent heat dissipation properties. [Means for solving the problem]
[0005] According to one aspect of the present invention, there is provided a wavelength conversion substrate comprising: a transparent substrate having a first main surface and a second main surface; a partition layer provided on the first main surface and having a plurality of first through holes arranged in a first direction and a second direction intersecting each other; a plurality of functional layers provided at positions of the plurality of first through holes, at least one of which is a wavelength conversion layer that converts light emitted by a light source into light of another color; and a heat transfer layer facing the first main surface with the partition layer and the plurality of functional layers in between, which is light transmissive at the positions of the plurality of first through holes and has a higher thermal conductivity than the plurality of functional layers.
[0006] According to another aspect of the present invention, there is provided a wavelength conversion substrate relating to the above aspect, wherein the heat transfer layer has one or more openings, and the one or more openings are arranged such that a first orthogonal projection of an opening of each of the plurality of first through holes on a side opposite the transparent substrate, onto the first main surface, at least partially overlaps with a second orthogonal projection of the one or more openings onto the first main surface.
[0007] According to yet another aspect of the present invention, there is provided the wavelength conversion substrate according to the above aspect, wherein an overlapping portion between the first orthogonal projection and the second orthogonal projection is smaller than the first orthogonal projection.
[0008] According to yet another aspect of the present invention, there is provided the wavelength conversion substrate according to the above aspect, wherein the area of the overlapping portion accounts for 50% or less of the area of the first orthogonal projection.
[0009] According to yet another aspect of the present invention, there is provided the wavelength conversion substrate according to any one of the above aspects, wherein the heat transfer layer has a plurality of second through holes at positions of the plurality of first through holes, respectively.
[0010] According to yet another aspect of the present invention, there is provided a wavelength conversion substrate relating to any of the above aspects, wherein the heat transfer layer has a plurality of second through holes arranged in the first direction and the second direction, and each of the second through holes is arranged to span two or more of the first through holes.
[0011] According to yet another aspect of the present invention, there is provided the wavelength conversion substrate according to any one of the above aspects, wherein the heat transfer layer includes one or more strip-shaped portions.
[0012] According to yet another aspect of the present invention, there is provided the wavelength conversion substrate according to any one of the above aspects, wherein the heat transfer layer includes a layer made of a metal or an alloy.
[0013] According to yet another aspect of the present invention, there is provided the wavelength conversion substrate according to any one of the above aspects, wherein the heat transfer layer is made of a transparent oxide layer.
[0014] According to yet another aspect of the present invention, there is provided the wavelength conversion substrate according to any one of the above aspects, wherein the heat transfer layer is made of a material having a thermal conductivity of 15 W / m·K or more.
[0015] According to yet another aspect of the present invention, there is provided the wavelength conversion substrate according to any of the above aspects, wherein the heat transfer layer has a thickness within a range of 100 to 5000 nm.
[0016] According to yet another aspect of the present invention, there is provided the wavelength conversion substrate according to any one of the above aspects, wherein the partition layer has a thickness within a range of 10 to 40 μm.
[0017] According to yet another aspect of the present invention, there is provided the wavelength conversion substrate according to any one of the above aspects, further comprising an overcoat layer interposed between the plurality of functional layers and the heat transfer layer.
[0018] According to yet another aspect of the present invention, there is provided the wavelength conversion substrate according to any one of the above aspects, wherein the overcoat layer is further interposed between the partition layer and the heat transfer layer.
[0019] According to yet another aspect of the present invention, there is provided a display device comprising a wavelength conversion substrate according to any of the above aspects, a dimming device arranged to face the first main surface, and an adhesive layer interposed between the wavelength conversion substrate and the dimming device and bonding them together.
[0020] According to yet another aspect of the present invention, there is provided a display device relating to the above aspect, further comprising a heat sink located outside the laminate of the wavelength conversion substrate, the dimming device, and the adhesive layer, and a heat transfer body that conducts heat from the heat transfer layer to the heat sink.
[0021] According to yet another aspect of the present invention, there is provided a display device relating to the above aspect, wherein the heat sink includes a back surface heat sink arranged to face the wavelength conversion substrate with the dimming device and the adhesive layer sandwiched therebetween.
[0022] According to yet another aspect of the present invention, there is provided a display device according to the above aspect, wherein the rear surface heat dissipator is a rear surface heat dissipation layer provided on the light control device.
[0023] According to yet another aspect of the present invention, there is provided the display device according to any one of the above aspects, wherein at least a portion of the heat transfer body is provided outside the laminate.
[0024] According to yet another aspect of the present invention, there is provided a display device according to the above aspect, wherein the heat transfer body at least partially covers an end face of the laminate.
[0025] According to yet another aspect of the present invention, there is provided a display device relating to the above aspect, in which the dimming device is provided with one or more through holes, and the heat transfer body is at least partially positioned within the one or more through holes.
[0026] According to yet another aspect of the present invention, there is provided a display device according to any one of the above aspects, wherein the light control device includes a plurality of light emitting elements.
[0027] According to yet another aspect of the present invention, there is provided a display device according to any of the above aspects, wherein the light control device includes a plurality of light emitting diodes. Effect of the Invention
[0028] According to the present invention, a display device with excellent heat dissipation properties is provided. [Brief description of the drawings]
[0029] [Figure 1] FIG. 1 is a plan view showing a part of a display device according to a first embodiment of the present invention. [Diagram 2] FIG. 2 is an equivalent circuit diagram of the display device shown in FIG. [Diagram 3] FIG. 3 is a cross-sectional view taken along line III-III of the display device shown in FIG. [Figure 4] FIG. 4 is a cross-sectional view taken along line IV-IV of the display device shown in FIG. [Diagram 5]FIG. 5 is a plan view showing a part of a wavelength conversion substrate included in the display device of FIG. [Figure 6] FIG. 6 is a cross-sectional view showing a part of a display device according to a second embodiment of the present invention. [Figure 7] FIG. 7 is a plan view showing a part of a wavelength conversion substrate included in a display device according to a first modified example. [Figure 8] FIG. 8 is a plan view showing a part of a wavelength conversion substrate included in a display device according to a second modified example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0030] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The embodiments described below are more specific embodiments of any of the above aspects. The following items can be incorporated into each of the above aspects alone or in combination.
[0031] The embodiments described below are merely examples of configurations for embodying the technical idea of the present invention, and the technical idea of the present invention is not limited by the materials, shapes, structures, etc. of the components described below. Various modifications can be made to the technical idea of the present invention within the technical scope defined by the claims.
[0032] In addition, elements having the same or similar functions are given the same reference numerals in the drawings referred to below, and duplicated explanations are omitted. In addition, the drawings are schematic, and the relationship between dimensions in one direction and dimensions in another direction, the relationship between the dimensions of one member and the dimensions of another member, etc. may differ from the actual ones.
[0033] <1> First embodiment FIG. 1 is a plan view showing a part of a display device according to a first embodiment of the present invention. FIG. 2 is an equivalent circuit diagram of the display device shown in FIG. 1. FIG. 3 is a cross-sectional view taken along line III-III of the display device shown in FIG. 1. FIG. 4 is a cross-sectional view taken along line IV-IV of the display device shown in FIG. 1. FIG. 5 is a plan view showing a part of a wavelength conversion substrate included in the display device of FIG. 1. In FIG. 1, the region surrounded by a dashed line represents an opening of a third through hole on the transparent substrate 31 side of a black matrix 32, as described later.
[0034] A display device 1A shown in FIGS. 1 to 4 is a micro LED display capable of color display using an active matrix driving method, in which each sub-pixel includes a light-emitting diode (LED).
[0035] In each figure, the X direction and the Y direction are parallel to the display surface of the display device 1A and cross each other. According to one example, the X direction and the Y direction are perpendicular to each other. The Z direction is perpendicular to the X direction and the Y direction. That is, the Z direction is the thickness direction of the display device 1A.
[0036] As shown in FIG. 2, the display device 1A includes video signal lines VSL, power supply lines PSL, scanning signal lines SSL, pixels PX, a video signal line driver VDR, and a scanning signal line driver SDR.
[0037] The video signal lines VSL and power supply lines PSL each extend in the Y direction and are alternately arranged in the X direction. The scanning signal lines SSL each extend in the X direction and are arranged in the Y direction.
[0038] The pixels PX are arranged in the X and Y directions. Each pixel PX includes a first sub-pixel PXR, a second sub-pixel PXG, and a third sub-pixel PXB. The first sub-pixel PXR, the second sub-pixel PXG, and the third sub-pixel PXB are arranged corresponding to the intersections of the video signal lines VSL and the scanning signal lines SSL.
[0039] The first sub-pixel PXR, the second sub-pixel PXG, and the third sub-pixel PXB emit light of different colors. In this example, the first sub-pixel PXR, the second sub-pixel PXG, and the third sub-pixel PXB emit red light, green light, and blue light, respectively.
[0040] In each pixel PX, the first sub-pixel PXR, the second sub-pixel PXG, and the third sub-pixel PXB are arranged in this order in the X direction. The arrangement order of the first sub-pixel PXR, the second sub-pixel PXG, and the third sub-pixel PXB in each pixel PX can be changed.
[0041] Here, the first sub-pixel PXR, the second sub-pixel PXG, and the third sub-pixel PXB form a stripe arrangement. The first sub-pixel PXR, the second sub-pixel PXG, and the third sub-pixel PXB may form other arrangements, such as a delta arrangement or a mosaic arrangement.
[0042] Each of the first sub-pixel PXR, the second sub-pixel PXG, and the third sub-pixel PXB includes a light-emitting element D, a drive control element DR, a switch SW, and a capacitor C.
[0043] The light-emitting element D is a light-emitting diode. The light-emitting diode is, for example, a light-emitting diode made of an inorganic material. The light-emitting diode made of an inorganic material is obtained, for example, by dividing a laminate having a similar layer structure into a plurality of parts. The light-emitting element D may be an electroluminescence element that is a light-emitting diode made of an organic material. The cathode of the light-emitting element D is connected to a ground electrode. Here, as an example, the light-emitting element D is a blue light-emitting diode made of an inorganic material that emits blue light.
[0044] The drive control element DR and the switch SW are field effect transistors. Here, the drive control element DR is a p-channel thin film transistor, and the switch SW is an n-channel thin film transistor. The drive control element DR has a gate connected to the drain of the switch SW, a source connected to a power supply line PSL, and a drain connected to the anode of the light-emitting element D. The switch SW has a gate connected to a scanning signal line SSL, and a source connected to a video signal line VSL.
[0045] The capacitor C is, for example, a thin-film capacitor. One electrode of the capacitor C is connected to the gate of the drive control element DR, and the other electrode is connected to the power supply line PSL.
[0046] The first subpixel PXR further includes a first wavelength conversion layer 36R and a first colored layer 33R shown in FIGS.
[0047] The first wavelength conversion layer 36R is disposed to face the light-emitting element D of the first subpixel PXR. The first wavelength conversion layer 36R converts the light emitted by the light-emitting element D of the first subpixel PXR into a first light of a specific color. For example, the first wavelength conversion layer 36R converts the blue light emitted by the light-emitting element D of the first subpixel PXR into red light.
[0048] The first colored layer 33R is disposed to face the light-emitting element D of the first subpixel PXR with the first wavelength conversion layer 36R sandwiched therebetween. The first colored layer 33R transmits light after wavelength conversion by the first wavelength conversion layer 36R and absorbs light that has not been wavelength-converted by the first wavelength conversion layer 36R. The first colored layer 33R is, for example, a red colored layer that transmits red light after wavelength conversion by the first wavelength conversion layer 36R and absorbs blue light and the like that has not been wavelength-converted by the first wavelength conversion layer 36R.
[0049] The second subpixel PXG further includes a second wavelength conversion layer 36G and a second colored layer 33G shown in FIG.
[0050] The second wavelength conversion layer 36G is disposed to face the light emitting element D of the second subpixel PXG. The second wavelength conversion layer 36G converts the light emitted by the light emitting element D of the second subpixel PXG into a second light having a color different from the first light. For example, the second wavelength conversion layer 36G converts the blue light emitted by the light emitting element D of the second subpixel PXG into green light.
[0051] The second colored layer 33G is disposed to face the light-emitting element D of the second sub-pixel PXG with the second wavelength conversion layer 36G sandwiched therebetween. The second colored layer 33G transmits light after wavelength conversion by the second wavelength conversion layer 36G and absorbs light that has not been wavelength-converted by the second wavelength conversion layer 36G. The second colored layer 33G is, for example, a green colored layer that transmits green light after wavelength conversion by the second wavelength conversion layer 36G and absorbs blue light and the like that has not been wavelength-converted by the second wavelength conversion layer 36G.
[0052] The third subpixel PXB further includes an underlayer 33B and a fill layer 36B shown in FIG.
[0053] The filling layer 36B is disposed so as to face the light-emitting element D of the third subpixel PXB. The filling layer 36B is, for example, a colorless and transparent layer. The filling layer 36B may be omitted.
[0054] The base layer 33B is disposed to face the light-emitting element D of the third subpixel PXB with the filling layer 36B sandwiched therebetween. The base layer 33B transmits light emitted by the light-emitting element D of the third subpixel PXB as third light. The base layer 33B is, for example, a colorless light-transmitting layer or a blue-colored layer that transmits blue light emitted by the light-emitting element D of the third subpixel PXB.
[0055] The video signal line driver VDR and the scan signal line driver SDR are mounted on a display panel using a chip on glass (COG) as shown in Fig. 2. The video signal line driver VDR and the scan signal line driver SDR may be mounted on a tape carrier package (TCP) instead of using a COG.
[0056] The video signal line driver VDR is connected to the video signal line VSL and the power supply line PSL, and outputs a voltage signal as a video signal to the video signal line VSL.
[0057] The scanning signal line driver SDR is connected to the scanning signal line SSL. The scanning signal line driver SDR outputs a voltage signal as a scanning signal to the scanning signal line SSL. The power supply line PSL may be connected to the scanning signal line driver SDR instead of being connected to the video signal line driver VDR.
[0058] The display device 1A will now be described in more detail. As shown in Figures 3 and 4, the display device 1A includes a light control device 2, a wavelength conversion substrate 3A, an adhesive layer 4, a heat sink 5A, and a heat transfer body consisting of a main heat transfer body 6A and an auxiliary heat transfer body 7.
[0059] The light control device is a device that emits light toward a wavelength conversion substrate and can adjust at least one of the intensity of the light and the time for emitting the light for each pixel or each subpixel. The light control device 2 shown in Fig. 3 and Fig. 4 includes a substrate 21, a semiconductor layer 22, conductor layers 23A, 23B, 23C, and 23D, insulating layers 24A, 24B, and 24C, a light emitting element 25, a partition layer 26, a filling layer 27, and a conductor layer 28.
[0060] The substrate 21 includes an insulating substrate such as a glass substrate. The substrate 21 may further include an undercoat layer provided on a main surface of the insulating substrate facing the wavelength conversion substrate 3A. The undercoat layer is, for example, a laminate of a silicon nitride layer and a silicon oxide layer sequentially laminated on the insulating substrate. The substrate 21 may be a semiconductor substrate such as a silicon substrate. The substrate 21 may be either hard or flexible.
[0061] The semiconductor layers 22 are arranged on the main surface of the substrate 21 facing the wavelength conversion substrate 3A. The semiconductor layers 22 are, for example, polysilicon layers. The semiconductor layers 22 are semiconductor layers of thin film transistors constituting the drive control elements DR or the switches SW. Each semiconductor layer 22 includes a source and a drain, and a channel region interposed between them.
[0062] The conductor layer 23A is a conductor pattern provided on the main surface of the substrate 21. The conductor layer 23A constitutes the video signal line VSL, the power supply line PSL, the source electrode SE, the drain electrode DE, and the lower electrode (not shown) of the capacitor C. The source electrode SE and the drain electrode DE are connected to the source and drain of the semiconductor layer 22, respectively. The conductor layer 23A is made of a metal or an alloy. The conductor layer 23A may have a single-layer structure or a multi-layer structure.
[0063] The insulating layer 24A covers the conductor layer 23A and the main surface of the substrate 21. The insulating layer 24A can be formed using, for example, TEOS (tetraethyl orthosilicate). The gate insulating film of each thin film transistor constituting the drive control element DR or the switch SW is a part of the insulating layer 24A. In addition, the dielectric layer of each capacitor C is another part of the insulating layer 24A.
[0064] The conductor layer 23B is a conductor pattern provided on the insulating layer 24A. The gate electrode GE of each thin film transistor constituting the drive control element DR or the switch SW is a part of the conductor layer 23B. Each gate electrode GE faces the channel region of the semiconductor layer 22 with the insulating layer 24A sandwiched therebetween. The upper electrode (not shown) of each capacitor C is another part of the conductor layer 23B. Each upper electrode faces the lower electrode of the capacitor C including this upper electrode with the insulating layer 24A sandwiched therebetween. The conductor layer 23B is made of a metal or an alloy. The conductor layer 23B may have a single-layer structure or a multi-layer structure.
[0065] The insulating layer 24B covers the conductor layer 23B and the insulating layer 24A. The insulating layer 24B is an interlayer insulating film. The insulating layer 24B is made of an inorganic insulator such as silicon oxide. The insulating layer made of an inorganic insulator can be formed by, for example, a plasma CVD (chemical vapor deposition) method.
[0066] 4, the conductor layer 23C is a conductor pattern provided on the insulating layer 24B. The conductor layer 23C constitutes the scanning signal line SSL. The source electrode SE and the drain electrode DE may be provided on the insulating layer 24B instead of on the insulating layer 24A. That is, the scanning signal line SSL and the source electrode SE and the drain electrode DE may be formed by the conductor layer 23C.
[0067] The insulating layer 24C covers the conductor layer 23C and the insulating layer 24B. The insulating layer 24C is a passivation film. The insulating layer 24C is made of an inorganic insulator such as silicon nitride.
[0068] The conductor layer 23D is a conductor pattern provided on the insulating layer 24C. The conductor layer 23D constitutes electrode pads arranged in the X direction and the Y direction corresponding to the first sub-pixel PXR, the second sub-pixel PXG, and the third sub-pixel PXB. A through hole is provided in the laminate consisting of the insulating layers 24A, 24B, and 24C at the position of the drain electrode DE connected to the drain of the drive control element DR. Each electrode pad is connected to the drain electrode DE via the through hole. The conductor layer 23D is made of, for example, a metal or an alloy. The conductor layer 23D may have a single-layer structure or a multi-layer structure.
[0069] The contour of the orthogonal projection of each electrode pad onto a plane perpendicular to the Z direction is spaced apart from and surrounds the orthogonal projection onto a plane of the light emitting element 25 placed on the electrode pad. That is, the electrode pad has a larger dimension in the direction perpendicular to the Z direction than the light emitting element 25. Therefore, the electrode pad also serves as a reflective layer that reflects light traveling toward the substrate 21. The electrode pad does not have to serve as a reflective layer. In this case, the reflective layer that serves this role may or may not be provided separately from the electrode pad.
[0070] The light-emitting element 25 shown in Figures 3 and 4 is the light-emitting element D shown in Figure 2. The light-emitting element 25 is disposed on an electrode pad.
[0071] Here, the light emitting element 25 is a light emitting diode made of an inorganic material. Note that a substrate including a light emitting diode as the light emitting element 25 is sometimes called an "LED substrate."
[0072] The light emitting element 25 has a multi-layer structure including a plurality of layers, for example, a first layer 251, a second layer 252, and a third layer 253. Here, the stacking direction of the layers included in the light emitting element 25 is the Z direction. This stacking direction may be perpendicular to the Z direction.
[0073] Each light emitting element 25 includes an anode and a cathode. The light emitting element 25 has an anode and a cathode on one surface. The anode of the light emitting element 25 is connected to an electrode pad via a bonding wire (not shown). When the light emitting element 25 has an anode on one surface and a cathode on the other surface, the light emitting element 25 may be bonded to the electrode pad and the anode may be connected to the electrode pad by die bonding using a conductive material such as a conductive paste as a bonding material. When the light emitting element 25 has an anode and a cathode on one surface, the conductor layer 28 may be omitted, and electrode pads for connecting to the cathode of the light emitting element 25 may be further provided on the insulating layer 24C, and wiring connected to these electrode pads may be further provided between the insulating layers, and the light emitting element 25 may be bonded to the electrode pad and the conductor layer 28 and the anode and cathode may be connected to the electrode pads by flip chip bonding.
[0074] The dimensions of the light emitting element 25 in the X and Y directions are preferably in the range of 1 to 100 μm, more preferably in the range of 5 to 80 μm, and even more preferably in the range of 10 to 60 μm. The dimension of the light emitting element 25 in the Z direction is preferably in the range of 1 to 20 μm, more preferably in the range of 1 to 15 μm, and even more preferably in the range of 1 to 10 μm.
[0075] The partition layer 26 is provided on the insulating layer 24C. The partition layer 26 has through holes at the positions of the electrode pads. The light-emitting elements 25 are located in these through holes. The partition layer 26 is made of, for example, a resin. Such a partition layer 26 can be formed by photolithography using a photosensitive resin. The partition layer 26 may include a resin layer having through holes and a reflective layer covering the side walls of the through holes and, optionally, the upper surface of the resin layer. The reflective layer may have a single-layer structure or a multi-layer structure. The layers included in the reflective layer are, for example, metals, alloys, or transparent dielectrics. The partition layer 26 may be omitted.
[0076] The filling layer 27 fills the gap between the light emitting element 25 and the partition layer 26. The filling layer 27 is a light transmitting layer that transmits light emitted by the light emitting element 25. The filling layer 27 also serves as a protective layer that protects the light emitting element 25 and the joint between the light emitting element 25 and the electrode. The filling layer 27 is made of, for example, a resin. It is preferable that the refractive index of the filling layer 27 is different from the refractive index of the material constituting the surface of the partition layer 26.
[0077] The conductor layer 28 is provided on the partition layer 26 and the filling layer 27. The cathode of the light-emitting element 25 is connected to the conductor layer 28. When the conductor layer 28 is made of a conductive transparent oxide, it can be provided so as to cover the entire cathode of the light-emitting element 25. When the conductor layer 28 is made of a metal or an alloy, it is preferable that the conductor layer 28 is provided so as to partially cover the cathode of the light-emitting element 25.
[0078] The wavelength conversion board 3A faces the light control device 2. Specifically, the wavelength conversion board 3A faces the board 21 with the light emitting element 25 and the like sandwiched therebetween.
[0079] The wavelength conversion substrate 3A includes a transparent substrate 31, a black matrix 32, a partition layer 34, a color filter including a first colored layer 33R and a second colored layer 33G, a base layer 33B, a first wavelength conversion layer 36R, a second wavelength conversion layer 36G, a filling layer 36B, an overcoat layer 37, and a heat transfer layer 38. Each of the first wavelength conversion layer 36R, the second wavelength conversion layer 36G, and the filling layer 36B is a functional layer.
[0080] The transparent substrate 31 has visible light transmissibility. The transparent substrate 31 is, for example, a colorless substrate. The transparent substrate 31 may have a single-layer structure or a multi-layer structure. The transparent substrate 31 is made of, for example, glass, a transparent resin, or a combination thereof. The transparent substrate 31 may be hard or flexible. The transparent substrate 31 has a first main surface facing the light control device 2 and a second main surface that is the rear surface of the first main surface.
[0081] The black matrix 32 is provided on the first main surface of the transparent substrate 31. The black matrix 32 is a black layer that blocks visible light. The black matrix 32 may be omitted.
[0082] The black matrix 32 is made of, for example, a mixture containing a binder resin and a colorant. The colorant is, for example, a black pigment or a mixture of pigments that exhibit black color through subtractive color mixing, for example, a mixture containing a blue pigment, a green pigment, and a red pigment.
[0083] The black matrix 32 has third through holes at the positions of the light emitting elements 25. The opening of each third through hole on the transparent substrate 31 side has a larger dimension in the direction perpendicular to the Z direction than the light emitting elements 25.
[0084] Here, the opening of the third through hole on the transparent substrate 31 side has a shape extending in the Y direction as shown by the dashed line in FIG. 1. Each portion of the black matrix 32 corresponding to the pixel PX includes a third through hole provided at the position of the first sub-pixel PXR, a third through hole provided at the position of the second sub-pixel PXG, and a third through hole provided at the position of the third sub-pixel PXB, and these three third through holes are arranged in the X direction. A plurality of third through hole groups each consisting of these three third through holes are arranged in the X direction and the Y direction. The distance between the third through hole groups adjacent to each other in the X direction is larger than the distance between the third through holes included in the same through hole group. The distance between the third through hole groups adjacent to each other in the Y direction is also larger than the distance between the third through holes included in the same through hole group.
[0085] The aperture ratio of the black matrix 32 is preferably in the range of 5 to 66%, more preferably in the range of 5 to 40%, and further preferably in the range of 5 to 20%. Light-emitting diodes made of inorganic materials can emit light brightly even when the light-emitting surface is small, and have a long life. Therefore, when the light-emitting element 25 is a light-emitting diode made of inorganic materials, a bright display is possible even if the aperture ratio of the black matrix 32 is reduced. Furthermore, by reducing the aperture ratio of the black matrix 32, reflection of external light can be suppressed, and a deeper black color can be displayed, thereby achieving a higher contrast ratio.
[0086] The thickness of the black matrix 32 is preferably in the range of 1 to 30 μm, more preferably in the range of 1 to 15 μm, and even more preferably in the range of 1 to 5 μm. A thick black matrix 32 is advantageous in achieving high light blocking properties. However, if the black matrix 32 is made thick, light may not reach the depths of the coating film made of a photosensitive black composition with sufficient intensity during pattern exposure, making it difficult to achieve high shape accuracy.
[0087] The partition layer 34 is provided on the black matrix 32 as shown in Figs. 3 and 4. According to one example, the partition layer 34 is a resin layer. This resin layer is, for example, transparent. In this case, the resin layer may be colored or colorless. The resin layer may have light scattering properties. According to one example, the resin layer is made of a composite material in which metal oxide particles or carbon particles are dispersed in a resin, and is a light-shielding layer having an optical density (OD value) of 3 or less for all light having a wavelength in the range of 400 to 700 nm.
[0088] The partition layer 34 has first through holes at the positions of the third through holes. These first through holes constitute a first through hole group corresponding to the above-mentioned third through hole group. Each of the first through hole groups here consists of three first through holes arranged in the X direction. The first through hole groups are arranged in a first direction and a second direction that intersect with each other, here the X direction and the Y direction.
[0089] As shown in FIG. 5, the distance W between adjacent first through hole groups in the X direction x 1 is the distance W between the first through holes included in the same through hole group x 2. The distance W between adjacent first through hole groups in the Y direction is larger than that of y 1 also represents the distance W between the first through holes included in the same through hole group. x Greater than 2.
[0090] Distance W x 2 is preferably in the range of 5 to 80 μm, more preferably in the range of 5 to 40 μm, and even more preferably in the range of 5 to 20 μm.
[0091] Distance W x 1 is preferably in the range of 5 to 250 μm, more preferably in the range of 50 to 250 μm, and even more preferably in the range of 100 to 250 μm.
[0092] Distance W y 1 is preferably in the range of 5 to 250 μm, more preferably in the range of 5 to 100 μm, and even more preferably in the range of 5 to 50 μm.
[0093] Distance W x 1 and distance W x Ratio to 2W x 1 / W x 2 is preferably in the range of 0.1 to 50, more preferably in the range of 2 to 20, and even more preferably in the range of 5 to 15. x 1 is the distance W x 2, the distance W x It may be less than 2.
[0094] Distance W y 1 and distance W x Ratio to 2W y 1 / W x The distance W is preferably in the range of 0.1 to 50, more preferably in the range of 0.1 to 10, and even more preferably in the range of 0.1 to 5. y 1 is the distance Wx 2, the distance W x It may be less than 2.
[0095] The first through-holes are provided such that the contour of the orthogonal projection of the opening on the transparent substrate 31 side onto the first main surface (hereinafter referred to as the first contour) surrounds the contour of the orthogonal projection of the third through-hole onto the first main surface (hereinafter referred to as the second contour). The first contour does not have to surround the second contour. In a structure in which the first contour surrounds the second contour, the effect of stray light on display is smaller than in a structure in which the first contour does not surround the second contour.
[0096] The partition layer 34 has a portion sandwiched between adjacent first through holes, i.e., a partition portion, which has a forward tapered cross-sectional shape. The partition portion may have a rectangular cross-sectional shape, a reverse tapered cross-sectional shape, or another cross-sectional shape.
[0097] The thickness of the partition layer 34 is preferably in the range of 5 to 50 μm, more preferably in the range of 5 to 40 μm, even more preferably in the range of 10 to 40 μm, and most preferably in the range of 10 to 25 μm. If the thickness of the partition layer 34 is small, it is difficult to increase the total thickness of the layers formed in the first through holes. If the partition layer 34 is made thick, the shape accuracy of the partition parts sandwiched between adjacent first through holes decreases.
[0098] The partition layer 34 may have a single-layer structure or a multi-layer structure. According to one example, the partition layer 34 having a multi-layer structure includes a resin layer having the shape described above for the partition layer 34, and a reflective layer covering the side walls of the through holes provided in the resin layer.
[0099] The reflective layer may cover the entire side wall of the through hole provided in the resin layer, or may partially cover the side wall. The reflective layer may further cover the upper surface of the resin layer. The reflective layer may cover the entire upper surface of the resin layer, or may partially cover the upper surface of the resin layer. The reflective layer may further cover the upper surfaces of the first colored layer 33R, the second colored layer 33G, and the base layer 33B. The reflective layer may cover the entire upper surface of the first colored layer 33R, the second colored layer 33G, and the base layer 33B, or may partially cover the upper surfaces.
[0100] The reflective layer may have a single-layer structure or a multi-layer structure. The layers contained in the reflective layer are made of, for example, a metal, an alloy, or a transparent dielectric material.
[0101] 3 and 4, the first colored layer 33R fills the third through hole at the position of the first sub-pixel PXR. As described above, here, the first colored layer 33R is a red colored layer.
[0102] The second colored layer 33G fills the third through hole at the position of the second sub-pixel PXG, as shown in Fig. 3. As described above, here, the second colored layer 33G is a green colored layer.
[0103] The underlayer 33B fills the third through-hole at the position of the third sub-pixel PXB as shown in Fig. 3. As described above, here, the underlayer 33B is a colorless light-transmitting layer or a blue colored layer.
[0104] The first wavelength conversion layer 36R is provided on the first colored layer 33R and fills at least the bottom of the second recess. The first wavelength conversion layer 36R is a layer containing a phosphor such as a quantum dot phosphor and a transparent resin. As described above, the first wavelength conversion layer 36R converts the blue light emitted by the light-emitting element D of the first sub-pixel PXR into red light.
[0105] The second wavelength conversion layer 36G is provided on the second colored layer 33G and fills at least the bottom of the second recess. The second wavelength conversion layer 36G is a layer containing a phosphor such as a quantum dot phosphor and a transparent resin. As described above, the second wavelength conversion layer 36G converts the blue light emitted by the light-emitting element D of the second sub-pixel PXG into red light.
[0106] The filling layer 36B is provided on the base layer 33B, and fills at least the bottom of the second recess. As described above, the filling layer 36B is a colorless and transparent layer. In this case, the filling layer 36B is made of, for example, a transparent resin.
[0107] The overcoat layer 37 is interposed between the functional layer and the heat transfer layer 38. Here, the overcoat layer 37 is further interposed between the partition layer 34 and the heat transfer layer 38. As described above, the functional layers are the first wavelength conversion layer 36R, the second wavelength conversion layer 36G, and the filling layer 36B.
[0108] The overcoat layer 37 is a colorless and transparent layer. The overcoat layer 37 is made of, for example, a cured resin. The overcoat layer 37 may be omitted.
[0109] The overcoat layer 37 can function as a planarizing layer. The overcoat layer 37 can also make it difficult for heat to be conducted from the heat transfer layer 38 to the functional layer. The thickness of the portion of the overcoat layer 37 that covers the functional layer is preferably 1 μm or more, and more preferably 3 μm or more.
[0110] The thickness of the portion of the overcoat layer 37 that covers the functional layer is W x 2 / 2 or less is preferable, and W x It is more preferable that the thickness is 2 / 3 or less. If the overcoat layer 37 is made thicker, the wavelength conversion substrate 3A becomes thicker, and therefore the display device 1A also becomes thicker. In addition, there is a possibility that color mixing due to waveguiding to adjacent pixels occurs.
[0111] The portions of the overcoat layer 37 further interposed between the partition layer 34 and the heat transfer layer 38 may be omitted. However, when the overcoat layer 37 includes these portions, it is possible to make it difficult for heat to be conducted from the heat transfer layer 38 to the partition layer 34, and therefore it is possible to make it difficult for heat to be conducted from the heat transfer layer 38 to the functional layer via the partition layer 34. The thickness of the portions of the overcoat layer 37 further interposed between the partition layer 34 and the heat transfer layer 38 is preferably 1 μm or more, and more preferably 3 μm or more.
[0112] The heat transfer layer 38 faces the first main surface of the transparent substrate 31, with the partition layer 34 and the functional layer sandwiched therebetween. Here, the heat transfer layer 38 is provided on the overcoat layer 37.
[0113] In this display device 1A, the main heat source is the light emitting element 25. As will be described later, part of the heat generated in the light emitting element 25 is conducted to the heat sink 5A via the heat transfer layer 38 and the heat transfer body.
[0114] The heat transfer layer 38 is optically transparent at the positions of the first through holes provided in the partition layer 34. Therefore, the heat transfer layer 38 allows the light emitted by the light emitting element 25 to enter the functional layer.
[0115] Here, the heat transfer layer 38 has one or more openings. More specifically, the heat transfer layer 38 has second through holes at the positions of the first through holes provided in the partition layer 34, as shown in FIG.
[0116] In Fig. 5, a rectangle having an outline formed by a dashed line represents an opening of the first through-hole on the opposite side to the transparent substrate 31, and corresponds to a first orthogonal projection of this opening onto the first main surface. In Fig. 5, a rectangle formed by a solid line represents an opening provided in the heat transfer layer 38, here the second through-hole, and corresponds to a second orthogonal projection of the opening onto the first main surface. The first orthogonal projection at least partially overlaps with the second orthogonal projection.
[0117] Here, the contour of the first orthogonal projection surrounds the second orthogonal projection. Therefore, the overlapping portion between the first orthogonal projection and the second orthogonal projection is smaller than the first orthogonal projection. The ratio of the area of this overlapping portion to the area of the first orthogonal projection is preferably 50% or less, and more preferably 10% or less. By reducing this ratio, it is possible to make it more difficult for heat to be conducted from the light-emitting element 25 to the functional layer.
[0118] The ratio of the area of the overlapping portion to the area of the first orthogonal projection is preferably 1% or more, and more preferably 5% or more. In the case where the heat transfer layer 38 is light-shielding at positions other than the openings, if the ratio is reduced, the ratio of the light emitted by the light emitting element 25 that is blocked by the heat transfer layer 38 and does not enter the functional layer may increase.
[0119] The heat transfer layer 38 has a higher thermal conductivity than the functional layer. Preferably, the heat transfer layer 38 has a higher thermal conductivity than the overcoat layer 37.
[0120] Heat transfer layer 38 is preferably made of a material having a thermal conductivity of 15 W / m K or more, and more preferably made of a material having a thermal conductivity of 150 W / m K or more. The thermal conductivity of the material constituting heat transfer layer 38 is, for example, 450 W / m K or less.
[0121] The heat transfer layer 38 may have a single-layer structure or a multi-layer structure. The layer included in the heat transfer layer 38 is made of, for example, a metal, an alloy, or a transparent oxide. From the viewpoint of thermal conductivity, the heat transfer layer 38 preferably includes a layer made of a metal or an alloy. The metal is, for example, titanium, chromium, aluminum, copper, or silver. The alloy is, for example, an aluminum alloy such as an aluminum-neodymium alloy. The transparent oxide is, for example, an inorganic oxide such as silicon oxide, aluminum oxide, and titanium oxide. Here, as an example, the heat transfer layer 38 includes a layer made of a metal or an alloy.
[0122] The thickness of the heat transfer layer 38 is preferably in the range of 100 to 5000 nm, and more preferably in the range of 100 to 1000 nm. Increasing the thickness of the heat transfer layer 38 improves the thermal conductivity in the in-plane direction. However, increasing the thickness of the heat transfer layer 38 increases the manufacturing cost.
[0123] The heat transfer layer 38 can be formed by, for example, performing film formation by a vapor phase deposition method such as sputtering and vacuum deposition, forming an etching mask, and etching such as wet etching in this order. The etching mask can be formed by photolithography using a photosensitive resin. The transparent resin layer used as the etching mask may or may not be removed after the above etching.
[0124] The adhesive layer 4 is interposed between the light control device 2 and the wavelength conversion substrate 3A, and bonds them to each other. The adhesive layer 4 transmits light emitted by the light emitting element 25. The adhesive layer 4 is, for example, a colorless and transparent layer. The adhesive layer 4 is made of an adhesive or a pressure sensitive adhesive.
[0125] The heat sink 5A is located outside the laminate of the light control device 2, the wavelength conversion substrate 3A, and the adhesive layer 4. Here, the heat sink 5A is a back surface heat sink provided to face the wavelength conversion substrate 3A with the light control device 2 and the adhesive layer 4 sandwiched therebetween. More specifically, the heat sink 5A is a back surface heat dissipation layer provided on the light control device 2.
[0126] The heat sink 5A is made of a highly thermally conductive material. The highly thermally conductive material is, for example, a metal such as copper, aluminum, iron, silver, titanium, molybdenum, tantalum, tungsten, or niobium; an alloy containing one or more of these metals; a carbide such as tungsten carbide; a carbon material such as graphite, graphene, carbon nanotubes, or diamond; another insulating ceramic; or a composite material containing one or more of these. The heat sink 5A may have a single-layer structure or a multi-layer structure.
[0127] The heat sink 5A has a flat surface. The heat sink 5A having a flat surface can be formed, for example, by forming a film on the dimmer 2. Alternatively, the heat sink 5A having a flat surface can be provided on the dimmer 2 by being attached to the dimmer 2. The heat sink 5A having a flat surface makes it easy to form the heat sink 5A or to install the heat sink 5A on the dimmer 2.
[0128] The heat sink 5A may have an uneven surface. For example, the heat sink 5A may have a plurality of fins or pins on the surface. Such a heat sink 5A has a large surface area and is excellent in heat dissipation.
[0129] Apparent area S of heat sink 5A RB and the area S of the back surface of the dimmer 2 B Comparison with S RB / S B The ratio S is preferably 0.5 or more, and more preferably 0.8 or more. RB / S B The larger the ratio S, the higher the heat dissipation. RB / S B The upper limit of the ratio S is, for example, 1. RB / S B may be greater than 1.
[0130] The minimum thickness of the heat sink 5A is preferably 100 μm or more, and more preferably 1000 μm or more. Increasing the minimum thickness of the heat sink 5A increases the heat capacity of the heat sink 5A and decreases the thermal resistance of the heat sink 5A. Although there is no upper limit to the minimum thickness of the heat sink 5A, increasing the minimum thickness of the heat sink 5A increases the thickness of the display device 1A. From this viewpoint, the minimum thickness of the heat sink 5A is preferably 5 mm or less.
[0131] The heat transfer body is at least partially provided outside the laminate. The heat transfer body conducts heat from the heat transfer layer 38 to the heat sink 5A. Here, the heat transfer body at least partially covers the end face of the laminate. As a result, the heat transfer body is in contact with the heat transfer layer 38 and the heat sink 5A at the position of the end face of the laminate. It is preferable that the heat transfer body is in contact with the heat transfer layer 38 and the heat sink 5A over substantially the entire perimeter of the laminate.
[0132] As described above, the heat transfer body here consists of the main heat transfer body 6A and the auxiliary heat transfer body 7. The main heat conductor 6A is provided outside the stack. Here, the main heat conductor 6A at least partially covers the end face of the stack. According to one example, the main heat conductor 6A is a member made of a highly thermally conductive material and attached to the end face of the stack. According to another example, the main heat conductor 6A is a layer made of a highly thermally conductive material and formed on the end face of the stack.
[0133] The auxiliary heat conductor 7 is provided on the heat transfer layer 38 at the peripheral portion of the wavelength conversion substrate 3A. According to one example, the auxiliary heat conductor 7 is a member made of a highly thermally conductive material and installed on the heat transfer layer 38 at the peripheral portion of the wavelength conversion substrate 3A. According to another example, the auxiliary heat conductor 7 is a layer made of a highly thermally conductive material and formed on the heat transfer layer 38 at the peripheral portion of the wavelength conversion substrate 3A. Here, the auxiliary heat conductor 7 is in contact with the heat transfer layer 38 and the main heat conductor 6A. Thus, the auxiliary heat conductor 7 assists in the heat transfer from the heat transfer layer 38 to the main heat conductor 6A. The auxiliary heat conductor 7 can be omitted.
[0134] As described above, the main heat transfer body 6A and the auxiliary heat transfer body 7 are made of a highly thermally conductive material. As the highly thermally conductive material, for example, the materials exemplified for the heat sink 5A can be used. Each of the main heat transfer body 6A and the auxiliary heat transfer body 7 may have a single-layer structure or a multi-layer structure.
[0135] In this display device 1A, the light emitting element 25 is the main heat source. A part of the heat generated in the light emitting element 25 is conducted to the heat sink 5A disposed outside the laminate via the heat transfer layer 38 and the heat transfer body. Therefore, this display device 1A is excellent in heat dissipation property because heat is unlikely to accumulate inside the laminate.
[0136] The display device 1A has such excellent heat dissipation properties, and is therefore less susceptible to degradation, luminance reduction, and color shift, as will be described below.
[0137] In recent years, in order to expand the use of display devices, display devices with higher output and higher brightness are required to improve outdoor visibility. However, when the output of a display device using a light-emitting diode is increased, the heat generated by the light-emitting diode may cause problems such as thermal deterioration of wiring and sealing resin located in the vicinity of the light-emitting diode. In addition, phosphors such as quantum dots cause thermal deterioration and brightness reduction and color shift when emitting light at high temperatures (shift in wavelength showing maximum intensity in the visible range; hereinafter referred to as wavelength shift). In particular, in a display device including a light-emitting diode and having a structure in which a pair of substrates are bonded together via an adhesive layer, heat is easily accumulated inside because the light-emitting diode, which is a heat source, is isolated from the atmosphere. Therefore, a high-brightness display device that converts short-wavelength light (blue light or ultraviolet light) emitted by a light-emitting diode into blue, green, and red light using phosphors such as quantum dots to perform full-color display is required to have excellent heat dissipation properties.
[0138] As described above, in the display device 1A, a part of the heat generated in the light emitting element 25 is guided to the heat sink 5A disposed outside the laminate via the heat transfer layer 38 and the heat transfer body. Therefore, in the display device 1A, heat is unlikely to accumulate inside the laminate, and the inside is unlikely to become excessively hot. Therefore, the display device 1A is unlikely to cause deterioration of quantum dots, reduction in brightness, and color shift (wavelength shift).
[0139] Furthermore, in the display device 1A, the heat sink 5A is provided on the back surface, so that the heat sink 5A does not interfere with the display. Therefore, various structures can be adopted for the heat sink 5A.
[0140] <2> Second embodiment FIG. 6 is a cross-sectional view showing a part of a display device according to a second embodiment of the present invention. The display device 1B shown in Fig. 6 is similar to the display device 1A described above, except that the display device 1B employs the following configuration. That is, the display device 1B includes a dimming device 2B, instead of the dimming device 2, which is substantially similar to the dimming device 2, except that one or more through holes each extending in the Z direction are provided. In the display device 1B, the heat transfer body is provided inside a laminate of the dimming device 2B, the wavelength conversion substrate 3A, and the adhesive layer 4, and includes a main heat transfer body 29 and an auxiliary heat transfer body 6, instead of the main heat transfer body 6A and the auxiliary heat transfer body 7. The heat sink 5 is similar to the heat sink 5A described above.
[0141] The main heat conductor 29 is made of a highly heat conductive material that fills a through hole provided in the light control device 2B. The main heat conductor 29 may be a through hole provided in the light control device 2B with a side wall coated with a highly heat conductive material. The main heat conductor 29 promotes heat transfer from the heat transfer layer 38 to the heat sink 5A.
[0142] The auxiliary heat conductor 6 is disposed between the main heat conductor 29 and the heat transfer layer 38. The auxiliary heat conductor 6 is made of a highly thermally conductive material. The auxiliary heat conductor 6 promotes heat transfer from the heat transfer layer 38 to the main heat conductor 29. The auxiliary heat conductor 6 may be omitted.
[0143] As described above, the main heat transfer body 29 and the auxiliary heat transfer body 6 are made of a highly thermally conductive material. As the highly thermally conductive material, for example, the materials exemplified for the heat sink 5A can be used. Each of the main heat transfer body 29 and the auxiliary heat transfer body 6 may have a single-layer structure or a multi-layer structure. Like the display device 1A, the display device 1B also has excellent heat dissipation properties.
[0144] <3> Variations The above-mentioned display device and wavelength conversion substrate can be modified in various ways, as exemplified below.
[0145] FIG. 7 is a plan view showing a part of a wavelength conversion substrate included in a display device according to a first modified example.
[0146] The display device according to the first modification is similar to the display device 1A, except that it includes a wavelength conversion substrate 3B shown in Fig. 7 instead of the wavelength conversion substrate 3A. Moreover, the wavelength conversion substrate 3B is similar to the wavelength conversion substrate 3A, except that it employs the following configuration.
[0147] That is, in the wavelength conversion substrate 3B, the heat transfer layer 38 has a plurality of second through holes arranged in the X direction and the Y direction, and each of these second through holes is provided so as to span two or more of the first through holes. Here, each of the second through holes is provided so as to span three of the first through holes arranged in the X direction.
[0148] A display device including the wavelength conversion substrate 3B instead of the wavelength conversion substrate 3A also has excellent heat dissipation properties, similar to the display device 1A.
[0149] The structure described above for the wavelength conversion substrate 3B may have a smaller effect of preventing heat transfer to the functional layer than the structure described above for the wavelength conversion substrate 3A. However, when the relative position between the wavelength conversion substrate and the light control device 2 is shifted in the X direction, the structure described above for the wavelength conversion substrate 3B has a smaller effect on the display due to the position shift than the structure described above for the wavelength conversion substrate 3A.
[0150] FIG. 8 is a plan view showing a part of a wavelength conversion substrate included in a display device according to a second modified example.
[0151] The display device according to the second modification is similar to the display device 1A, except that it includes a wavelength conversion substrate 3C shown in Fig. 8 instead of the wavelength conversion substrate 3A. Moreover, the wavelength conversion substrate 3C is similar to the wavelength conversion substrate 3A, except that it has the following configuration.
[0152] That is, in the wavelength conversion substrate 3C, the heat transfer layer 38 includes one or more strip-shaped portions. Here, the heat transfer layer 38 includes a plurality of strip-shaped portions that extend in the Y direction while meandering and are arranged in the X direction. Each of the strip-shaped portions is made up of first through holes arranged in the Y direction and faces three rows arranged in the X direction.
[0153] A display device including the wavelength conversion substrate 3C instead of the wavelength conversion substrate 3A also has excellent heat dissipation properties, similar to the display device 1A.
[0154] The structure described above for the wavelength conversion substrate 3C may have a smaller effect of preventing heat transfer to the functional layer than the structure described above for the wavelength conversion substrate 3A. However, the heat transfer layer 38 described above for the wavelength conversion substrate 3B can be formed not only by the above method using the vapor deposition method, but also by a method such as printing of a conductive paste.
[0155] Further modifications of the above-described display device and wavelength conversion substrate are possible. For example, the wavelength conversion substrates 3B and 3C may be used in the display device 1B.
[0156] The heat transfer layer 38 may have other shapes such as a lattice shape and a stripe shape. The heat transfer layer 38 may be composed of a plurality of parts arranged in the X direction and the Y direction and spaced apart from each other. In consideration of heat dissipation, it is preferable that all parts constituting the heat transfer layer 38 are in contact with the heat transfer body.
[0157] The heat transfer layer 38 may be a transparent oxide layer. In this case, the heat transfer layer 38 may be a solid film having no openings.
[0158] The display device may be provided with a front heat sink instead of the heat sink 5A as a back heat sink. The front heat sink is, for example, a front heat sink layer provided on the second main surface of the transparent substrate 31. The front heat sink is open at the position of the third through hole provided in the black matrix 32.
[0159] The front heat sink is made of a highly thermally conductive material. For example, the highly thermally conductive material exemplified for the heat sink 5A can be used. The front heat sink may have a single-layer structure or a multi-layer structure.
[0160] The front heat sink preferably has a black surface. The front heat sink having a black surface includes, for example, one or more of chromium, copper oxide nitride, carbon nanotubes, graphite, and graphene on the surface or the entire surface. The front heat sink having a black surface can play a similar role to the black matrix 32.
[0161] In this way, a display device having a front heat sink instead of a back heat sink also has excellent heat dissipation properties, similar to the display device 1A.
[0162] The display device may be provided with both a rear surface heat sink and a front surface heat sink, in which case particularly excellent heat dissipation properties can be achieved.
[0163] The display device described above may not include a heat sink. In this case, the heat transfer body may also be omitted. When the heat sink or the like is omitted, the heat dissipation effect is not as high as when the heat sink or the like is provided. However, even when the heat sink or the like is omitted, the heat transfer layer 38 prevents heat transfer to the functional layer and promotes heat transfer from the center to the periphery of the display body. Therefore, when the heat sink or the like is omitted, excellent heat dissipation can be achieved, although not as good as when the heat sink or the like is provided.
[0164] A circuit provided in a dimmer or the like may have a configuration different from that shown in FIG. For example, the video signal line driver VDR may supply a current signal as a video signal to the video signal line VSL. In this case, in each of the first sub-pixel PXR, the second sub-pixel PXG, and the third sub-pixel PXB, the gate-source voltage of the drive control element DR may be set to a value corresponding to this current signal during a write period in which a video signal is written, and a drive current having a magnitude corresponding to the gate-source voltage may be passed to the light-emitting element D during a light-emitting period. In addition, the light control device 2 may employ a circuit for displaying an image by a passive matrix driving method instead of a circuit for displaying an image by an active matrix driving method.
[0165] Instead of using a blue light-emitting diode, an ultraviolet light-emitting diode may be used as the light-emitting element 25. In this case, the filling layer 36B is a wavelength conversion layer that converts the light emitted by the light-emitting element 25 of the third sub-pixel PXB into a third light having a color different from the first light and the second light. For example, the first wavelength conversion layer 36R, the second wavelength conversion layer 36G, and the filling layer 36B convert the ultraviolet light emitted by the light-emitting element 25 into red light, green light, and blue light, respectively.
[0166] Although the above display device is capable of displaying a color image, the display device may also display a monochrome image. For example, in the display device 1A, the first sub-pixel PXR and the second sub-pixel PXG are omitted, a blue light-emitting diode is used as the light-emitting element 25, and the filling layer 36B is a wavelength conversion layer that converts blue light to yellow light. When the filling layer 36B converts a part of the blue light incident thereon into yellow light and transmits the rest, it is possible to display white by additively mixing blue and yellow colors.
[0167] The wavelength conversion substrate may further include an overcoat layer interposed between the black matrix 32 and the partition layer 34. The overcoat layer may include a transparent resin and one or more of an ultraviolet absorbing agent, a yellow pigment, and transparent particles. The overcoat layer including an ultraviolet absorbing agent can absorb stray light incident on the partition layer 34 when the stray light is ultraviolet light.
[0168] The display device may be other than a micro LED display, such as an organic electroluminescence display device, although the display device preferably includes light emitting elements. [Explanation of symbols]
[0169] 1A...display device, 1B...display device, 2...light control device, 2B...light control device, 3A...wavelength conversion substrate, 3B...wavelength conversion substrate, 3C...wavelength conversion substrate, 4...adhesive layer, 5...heat sink, 5A...heat sink, 6...auxiliary heat conductor, 6A...main heat conductor, 7...auxiliary heat conductor, 21...substrate, 22...semiconductor layer, 23A...conductor layer, 23B...conductor layer, 23C...conductor layer, 23D...conductor layer, 24A...insulating layer, 24B...insulating layer, 24C...insulating layer, 25...light emitting element, 26...partition layer, 27...filling layer, 28...conductor layer, 29...main heat conductor, 31...transparent substrate, 32...black matrix, 33B...underlayer, 33G...second colored layer , 33R...first colored layer, 34...partition layer, 36B...filling layer, 36G...second wavelength conversion layer, 36R...first wavelength conversion layer, 37...overcoat layer 37...heat transfer layer, 251...first layer, 252...second layer, 253...third layer, C...capacitor, D...light emitting element, DE...drain electrode, DR...drive control element, GE...gate electrode, PSL...power supply line, PX...pixel, PXB...third subpixel, PXG...second subpixel, PXR...first subpixel, SDR...scanning signal line driver, SE...source electrode, SSL...scanning signal line, SW...switch, VDR...video signal line driver, VSL...video signal line, W x 1...Distance, W x 2...Distance, W y 1...Distance.
Claims
1. a transparent substrate having a first major surface and a second major surface; a partition layer provided on the first main surface and having a plurality of first through holes arranged in a first direction and a second direction intersecting each other; a plurality of functional layers provided at positions of the plurality of first through holes, at least one of which is a wavelength conversion layer that converts light emitted by a light source into light of another color; a heat transfer layer facing the first main surface with the partition layer and the plurality of functional layers interposed therebetween, the heat transfer layer being optically transparent at the positions of the plurality of first through holes and having a higher thermal conductivity than the plurality of functional layers; A wavelength conversion substrate comprising:
2. 2. The wavelength conversion substrate according to claim 1, wherein the heat transfer layer has one or more openings, and the one or more openings are arranged such that a first orthogonal projection of an opening of each of the plurality of first through holes on a side opposite to the transparent substrate, onto the first main surface, at least partially overlaps with a second orthogonal projection of the one or more openings onto the first main surface.
3. The wavelength conversion substrate according to claim 2 , wherein an overlapping portion between the first orthogonal projection and the second orthogonal projection is smaller than that between the first orthogonal projection and the second orthogonal projection.
4. 4. The wavelength conversion substrate according to claim 3, wherein the area of the overlapping portion accounts for 50% or less of the area of the first orthogonal projection.
5. The wavelength conversion substrate according to claim 1 , wherein the heat transfer layer has a plurality of second through holes at positions corresponding to the plurality of first through holes.
6. 2. The wavelength conversion substrate according to claim 1, wherein the heat transfer layer has a plurality of second through holes arranged in the first direction and the second direction, and each of the second through holes is arranged to span two or more of the first through holes.
7. The wavelength conversion substrate according to claim 1 , wherein the heat transfer layer includes one or more strip-shaped portions.
8. The wavelength conversion substrate according to claim 1 , wherein the heat transfer layer includes a layer made of a metal or an alloy.
9. The wavelength conversion substrate according to claim 1 , wherein the heat transfer layer is a transparent oxide layer.
10. 2. The wavelength conversion substrate according to claim 1, wherein the heat transfer layer is made of a material having a thermal conductivity of 15 W / m·K or more.
11. 2. The wavelength conversion substrate according to claim 1, wherein the heat transfer layer has a thickness in the range of 100 to 5000 nm.
12. 2. The wavelength conversion substrate according to claim 1, wherein the partition layer has a thickness in the range of 10 to 40 [mu]m.
13. The wavelength conversion substrate according to claim 1 , further comprising an overcoat layer interposed between the plurality of functional layers and the heat transfer layer.
14. The wavelength conversion substrate according to claim 13 , wherein the overcoat layer is further interposed between the partition layer and the heat transfer layer.
15. A wavelength conversion substrate according to any one of claims 1 to 14, A light control device disposed to face the first main surface; an adhesive layer interposed between the wavelength conversion substrate and the light control device and bonding them together; A display device comprising:
16. a heat sink located outside a laminate of the wavelength conversion substrate, the light control device, and the adhesive layer; a heat transfer body that transfers heat from the heat transfer layer to the heat sink; The display device according to claim 15 , further comprising:
17. The display device according to claim 16 , wherein the heat sink includes a back surface heat sink provided to face the wavelength conversion substrate with the light control device and the adhesive layer sandwiched therebetween.
18. The display device according to claim 17 , wherein the rear surface heat sink is a rear surface heat sink layer provided on the light control device.
19. The display device according to claim 16 , wherein at least a portion of the heat transfer body is provided outside the laminate.
20. The display device according to claim 19 , wherein the heat transfer body at least partially covers an end face of the laminate.
21. The display device according to claim 16 , wherein the light control device is provided with one or more through holes, and the heat transfer body is at least partially located within the one or more through holes.
22. The display device of claim 15 , wherein the light control device includes a plurality of light emitting elements.
23. The display device of claim 15, wherein the dimmer comprises a plurality of light emitting diodes.
Citation Information
Patent Citations
Color display device
JP2000131683A
Liquid crystal display device
JP2009244383A