Capacitor and manufacturing method thereof

Abstract

To provide a high-capacity capacitor and a manufacturing method thereof.SOLUTION: A capacitor includes a substrate having a body receiving groove formed therein with a first depth from an upper surface thereof, and first and second internal electrodes stacked with a dielectric layer therebetween, and a body positioned in the body receiving groove, and the width of the body receiving groove is equal to or greater than the first depth of the body receiving groove, and the length of the body receiving groove is 1 time or more compared to the first depth of the body receiving groove.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a capacitor and a method for manufacturing the same. [Background technology]

[0002] Electronic components used in electronic devices include capacitors, inductors, piezoelectric elements, varistors, thermistors, etc. Among these ceramic electronic components, multilayer capacitors have the advantages of being small, having a high capacitance, and being easy to mount, and can be used in various electronic devices.

[0003] For example, the stacked capacitor can be mounted on substrates of various electronic products such as imaging devices such as liquid crystal display (LCD), plasma display panel (PDP), and organic light-emitting diode (OLED), computers, personal portable terminals, and smartphones, and can be used as a chip-type capacitor that charges and discharges electricity.

[0004] In recent years, the trend toward smaller and thinner electronic products has led to an increased demand for capacitors with higher capacitance than conventional stacked capacitors. Summary of the Invention [Problem to be solved by the invention]

[0005] At least one of the embodiments provides a capacitor having a high capacitance and a method for manufacturing the same.

[0006] However, the problems to be solved by the embodiments of the present invention are not limited to the above problems, and may be expanded in various ways within the scope of the technical ideas included in the present invention. [Means for solving the problem]

[0007] According to one aspect, a capacitor includes a substrate having a body receiving groove formed therein with a first depth from an upper surface thereof, a first internal electrode and a second internal electrode stacked with a dielectric layer therebetween, and a body positioned in the body receiving groove, wherein a width of the body receiving groove may be equal to or greater than 1 relative to the first depth of the body receiving groove, and a length of the body receiving groove may be equal to or greater than 1 relative to the first depth of the body receiving groove.

[0008] The electrostatic discharge device may further include a first external electrode located on an upper surface of the body at one end in the length direction, and a second external electrode located on an upper surface of the body at the other end in the length direction.

[0009] The body may further include a first electrode separation layer located between the first external electrode and the second internal electrode.

[0010] At one end of the body in the longitudinal direction, one end of the second internal electrode may be structured to be recessed inside the body receiving groove, and the first electrode separation layer may be positioned in a space formed between two adjacent ones of the dielectric layers.

[0011] The body may further include a second electrode separation layer located between the second external electrode and the first internal electrode.

[0012] At the other end of the body in the longitudinal direction, one end of the first internal electrode may be structured to be recessed inside the body receiving groove, and the second electrode separation layer may be positioned in a space formed between two adjacent ones of the dielectric layers.

[0013] The insulating layer may further include a lower insulating layer disposed between the body receiving groove and the body.

[0014] The body may further include a first external electrode connected to the first internal electrode on the top surface of the body, a second external electrode connected to the second internal electrode on the top surface of the body, and an insulating layer located on an outer periphery of the top surface of the body other than where the first external electrode and the second external electrode are located.

[0015] The body receiving groove may have a structure in which one side in the width direction is open toward a side surface of the substrate, and one side surface of the body in the width direction may be positioned on the side surface of the substrate.

[0016] The substrate may have a vertical protrusion protruding upward from a bottom surface of the body receiving groove and spaced apart from a widthwise side surface of the body receiving groove.

[0017] The substrate may have a lateral protrusion formed thereon, the lateral protrusion protruding upward from a bottom surface of the body receiving groove and spaced apart from a longitudinal side surface of the body receiving groove.

[0018] The body may further include a first external electrode connected to the first internal electrode on an upper surface thereof, and a second external electrode connected to the second internal electrode on an upper surface thereof, and in a lower region of the first external electrode and the second external electrode, a boundary between the body and the substrate may be inclined with respect to a horizontal direction perpendicular to the vertical direction.

[0019] The width of the body receiving groove may be 1 to 44 times the depth of the body receiving groove, and the length of the body receiving groove may be 1 to 54 times the depth of the body receiving groove.

[0020] The depth of the body receiving groove may be 100 μm or less.

[0021] According to another aspect, a method for manufacturing a capacitor may include the steps of forming a body receiving groove extending downward on an upper surface of a substrate, forming an internal electrode layer and a dielectric layer on the substrate, removing areas of the internal electrode layer and the dielectric layer located outside the body receiving groove to form a body including an internal electrode formed through the internal electrode layer and the dielectric layer, and forming an external electrode connected to the internal electrode on the body. Effect of the Invention

[0022] According to at least one of the embodiments, a capacitor having a high capacitance and a manufacturing method thereof can be provided. [Brief description of the drawings]

[0023] [Figure 1] 1 is a diagram illustrating a capacitor according to an embodiment. [Diagram 2] 2 is a longitudinal cross-sectional view of the capacitor in FIG. 1 in the width direction. [Diagram 3] 2 is a longitudinal sectional view of the capacitor of FIG. 1 taken along the length direction. [Figure 4] 1 is a diagram illustrating a method of manufacturing a capacitor according to an embodiment; [Diagram 5] 1 is a diagram illustrating a method of manufacturing a capacitor according to an embodiment; [Figure 6] 1 is a diagram illustrating a method of manufacturing a capacitor according to an embodiment; [Figure 7] 1 is a diagram illustrating a method of manufacturing a capacitor according to an embodiment; [Figure 8] 1 is a diagram illustrating a method of manufacturing a capacitor according to an embodiment; [Figure 9] 1 is a diagram illustrating a method of manufacturing a capacitor according to an embodiment; [Figure 10] 1 is a diagram illustrating a method of manufacturing a capacitor according to an embodiment; [Figure 11] 1 is a diagram illustrating a method of manufacturing a capacitor according to an embodiment; [Figure 12]FIG. 13 is a vertical cross-sectional view taken along the width direction of a capacitor according to another embodiment. [Figure 13] 13 is a longitudinal sectional view taken along the length direction of a capacitor according to another embodiment. FIG. [Figure 14] 13 is a plan view showing dicing lines for dicing in a method of manufacturing a capacitor according to another embodiment. [Figure 15] 15 is a view showing one side end of a longitudinal cross-sectional view taken along a width direction of a capacitor manufactured by the method of FIG. 14. [Figure 16] 13 is a plan view showing dicing lines for dicing in a method of manufacturing a capacitor according to another embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0024] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in detail with reference to the accompanying drawings, in which: FIG. 1 is a block diagram of a semiconductor device according to an embodiment of the present invention;

[0025] In order to clearly describe the present invention, parts that are not relevant to the description will be omitted, and the same reference numerals will be used to refer to the same or similar components throughout the specification.

[0026] In addition, the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of explanation, and the present invention is not necessarily limited to those shown in the drawings. In the drawings, thicknesses are enlarged to clearly show multiple layers and regions. In the drawings, thicknesses of some layers and regions are exaggerated for convenience of explanation.

[0027] In addition, when a part such as a layer, film, region, or plate is said to be "on" or "above" another part, this includes not only the part being "directly above" the other part, but also the case where there is another part in between. Conversely, when a part is said to be "directly above" another part, it means that there is no other part in between. In addition, being "on" or "above" a reference part means being located above or below the reference part, and does not necessarily mean being located "above" or "above" the direction against gravity.

[0028] Also, throughout the specification, when a part is said to "comprise" a certain element, this means that it can further include other elements, rather than excluding other elements, unless specifically stated to the contrary.

[0029] Additionally, throughout the specification, "on a plane" means when the target part is viewed from above, and "on a cross section" means when the target part is cut vertically and viewed from the side.

[0030] FIG. 1 is a diagram showing a capacitor 1 according to one embodiment, FIG. 2 is a vertical cross-sectional view along the width direction (W) of the capacitor 1 of FIG. 1, and FIG. 3 is a vertical cross-sectional view along the length direction (L) of the capacitor 1 of FIG. 1.

[0031] 1 to 3, a capacitor 1 according to an embodiment may include a substrate 10, a body 20, and an external electrode 30. In the embodiment shown in FIG.

[0032] The substrate 10 has a predetermined area. The substrate 10 is made of an insulating material. For example, the substrate 10 may be a silicon substrate. The substrate 10 has an upper surface and a lower surface opposed to each other. The substrate 10 has a predetermined thickness in a vertical direction (T) in which the upper surface and the lower surface are spaced apart from each other.

[0033] The thickness of the substrate 10 may be greater than 100 μm. The substrate 10 may have a preset width in a width direction (W) intersecting with the up-down direction (T). The width direction (W) may be perpendicular to the up-down direction (T). The substrate 10 may have a preset length in a length direction (L) intersecting with the up-down direction (T) and the width direction (W). The length direction (L) may be perpendicular to the up-down direction (T) and the width direction (W). The length of the substrate 10 may be greater than the width of the substrate 10. As an example, the ratio of the length of the substrate 10 to the width of the substrate 10 may be 1.5 or more and 2.5 or less. The substrate 10 may have a rough shape of a hexahedron.

[0034] A body receiving groove 100 is formed on the upper surface of the substrate 10 .

[0035] The body accommodating groove 100 has a structure extending in a predetermined depth direction from the upper surface to the lower surface of the substrate 10. The body accommodating groove 100 may have a first depth (D1) in the up-down direction (T). The first depth (D1) of the body accommodating groove 100 may be the distance between the upper surface of the substrate 10 and the point of the body accommodating groove 100 that is closest to the lower surface of the substrate 10.

[0036] The body receiving groove 100 may have a preset width in the width direction (W). The width (W1) of the body receiving groove 100 may be the distance between the two ends that are the largest apart along the width direction (W). The width (W1) of the body receiving groove 100 may be measured from the upper end of the body receiving groove 100.

[0037] The width direction (W) side of the body receiving groove 100 may be inclined at a first angle (α) with respect to the horizontal direction. The first angle (α) may be the inclination of a straight line connecting the upper and lower ends of the width direction (W) side of the body receiving groove 100. The first angle (α) may have a value of 90° or less.

[0038] The width (W1) of the body accommodating groove 100 is provided to be 1 or more relative to the first depth (D1) of the body accommodating groove 100. As an example, the width (W1) of the body accommodating groove 100 may be 1 or more and 44 or less relative to the first depth (D1) of the body accommodating groove 100. The first depth (D1) of the body accommodating groove 100 may be 100 μm or less. And, the width (W1) of the body accommodating groove 100 may be 100 μm or more. The width (W1) of the body accommodating groove 100 may be 100 μm or more and 1300 μm or less.

[0039] The body receiving groove 100 may have a preset length in the length direction (L). The length (L1) of the body receiving groove 100 may be the distance between the two ends that are the longest apart along the length direction (L). The length (L1) of the body receiving groove 100 may be measured from the upper end of the body receiving groove 100.

[0040] The length direction (L) side of the body receiving groove 100 may be inclined at a second angle (β) with respect to the horizontal direction. The second angle (β) may be the inclination of a straight line connecting the upper and lower ends of the length direction (L) side of the body receiving groove 100. The second angle (β) may have a value of 90° or less.

[0041] The length (L1) of the body accommodating groove 100 is provided to be 1 or more relative to the first depth (D1) of the body accommodating groove 100. As an example, the length (L1) of the body accommodating groove 100 may be 1 or more and 54 or less relative to the first depth (D1) of the body accommodating groove 100. The first depth (D1) of the body accommodating groove 100 may be 100 μm or less. And, the length (L1) of the body accommodating groove 100 may be 100 μm or more. The length (L1) of the body accommodating groove 100 may be 100 μm or more and 1600 μm or less. The length (L1) of the body accommodating groove 100 may be greater than the width (W1) of the body accommodating groove 100.

[0042] The body 20 is located inside the body receiving groove 100. The body 20 includes an internal electrode 210 and a dielectric layer 220.

[0043] The internal electrode 210 is stacked and positioned inside the body receiving groove 100. The internal electrode 210 is provided using a conductive material. The internal electrode 210 may be a metallic material. A width direction (W) end of the internal electrode 210 may be inclined upward as it goes outward in correspondence with a width direction (W) side of the body receiving groove 100. A length direction (L) end of the internal electrode 210 may be inclined upward as it goes outward in correspondence with a length direction (L) side of the body receiving groove 100.

[0044] The dielectric layer 220 is located between the internal electrodes 210 adjacent to each other in the up-down direction (T). The dielectric layer 220 may be located on the uppermost internal electrode 210. The dielectric layer 220 may be formed of any of metal oxides such as Al2O3ZrO2, HfO2, and AlN. The dielectric layer 220 may be formed of a combination of metal oxides such as Al2O3ZrO2, HfO2, and AlN. The dielectric layer 220 may be formed of a ZrO2-Al2O3-ZrO2 composite layer ZAZ.

[0045] The internal electrode 210 may include a first internal electrode 211 and a second internal electrode 212 . The first internal electrode 211 and the second internal electrode 212 are stacked and positioned inside the body receiving groove 100. The first internal electrode 211 and the second internal electrode 212 may be alternately stacked. A dielectric layer 220 may be positioned between the first internal electrode 211 and the second internal electrode 212. The first internal electrode 211 and the second internal electrode 212 are provided with a conductive material. The first internal electrode 211 may be a metallic material. The second internal electrode 212 may be a metallic material. The first internal electrode 211 and the second internal electrode 212 may be made of different materials. Thus, the first internal electrode 211 and the second internal electrode 212 may be selectively etched. As an example, the first internal electrode 211 may include molybdenum, and the second internal electrode 212 may include titanium.

[0046] A lower insulating layer 201 may be located between the body receiving groove 100 and the body 20. That is, the lower insulating layer 201 may be located on the body receiving groove 100, and the body 20 may be located on the lower insulating layer 201. A first internal electrode 211 or a second internal electrode 212 may be located on the lower insulating layer 201. The lower insulating layer 201 may be silicon oxide (SiO2), etc.

[0047] The external electrode 30 is connected to the internal electrode 210 of the body 20. The external electrode 30 may be located on the body 20. Also, a portion of the external electrode 30 may be located on the substrate 10. In this case, an upper insulating layer 35 may be located between the external electrode 30 and the substrate 10. The upper insulating layer 35 may be made of alumina (Al2O3), silicon oxide (SiO2), or the like.

[0048] In the lower region of the external electrode 30, the boundary between the body 20 and the substrate 10 can be inclined with respect to the horizontal direction perpendicular to the up-down direction (T). Also, in the lower region of the external electrode 30, the boundary between the body 20 and the substrate 10 can be inclined with respect to the up-down direction (T) and the horizontal direction.

[0049] The external electrodes 30 include a first external electrode 31 and a second external electrode 32 . The first external electrode 31 is located on the upper surface of the body 20. The first external electrode 31 may be located on the upper surface of one end of the body 20 in the length direction (L). In a lower region of the first external electrode 31, the boundary between the body 20 and the substrate 10 may be inclined with respect to a horizontal direction perpendicular to the up-down direction (T). Also, a portion of the first external electrode 31 may be located on the upper surface of the substrate 10. The first external electrode 31 is connected to the first internal electrode 211. That is, the first external electrode 31 is located on the upper surface of the body 20 and is connected to the first internal electrode 211 exposed on the upper surface of the body 20. That is, the first external electrode 31 may be directly connected to one end of the first internal electrode 211 exposed on the upper surface of the body 20.

[0050] At one end of the body 20 in the length direction (L), the first electrode separation layer 231 is located outside one end of the second internal electrode 212. That is, at one end of the body 20 in the length direction (L), one end of the second internal electrode 212 may have a structure that is inserted inside the body receiving groove 100. And, since the second internal electrode 212 has a structure that is inserted inside the body receiving groove 100, the first electrode separation layer 231 may be located in a space formed between two adjacent dielectric layers 220. The first electrode separation layer 231 is provided with an insulating material. For example, the first electrode separation layer 231 may be provided with alumina (Al2O3), silicon oxide, etc. Thus, the first electrode separation layer 231 is located between the first external electrode 31 and the second internal electrode 212. The first electrode separation layer 231 electrically separates the first external electrode 31 from the second internal electrode 212.

[0051] The second external electrode 32 is located on the upper surface of the body 20. The second external electrode 32 may be located on the upper surface of the other end of the body 20 in the length direction (L). In a lower region of the second external electrode 32, the boundary between the body 20 and the substrate 10 may be inclined with respect to a horizontal direction perpendicular to the up-down direction (T). Also, a portion of the second external electrode 32 may be located on the upper surface of the substrate 10. The second external electrode 32 is connected to the second internal electrode 212. That is, the second external electrode 32 may be located on the upper surface of the body 20 and connected to the second internal electrode 212 exposed on the upper surface of the body 20. That is, the second external electrode 32 may be directly connected to one end of the second internal electrode 212 exposed on the upper surface of the body 20.

[0052] At the other end of the length direction (L) of the body 20, the second electrode separation layer 232 is positioned outside one end of the first internal electrode 211. That is, at the other end of the length direction (L) of the body 20, one end of the first internal electrode 211 may have a structure that is inserted inside the body receiving groove 100. And, since the first internal electrode 211 has a structure that is inserted inside the body receiving groove 100, the second electrode separation layer 232 may be positioned in a space formed between two adjacent dielectric layers 220. The first electrode separation layer 231 and the second electrode separation layer 232 may be positioned in opposite directions with the central region of the body 20 therebetween. The second electrode separation layer 232 is provided with an insulating material. For example, the second electrode separation layer 232 may be provided with alumina (Al2O3), silicon oxide, etc. As a result, the second electrode separation layer 232 is positioned between the second external electrode 32 and the first internal electrode 211. The second electrode separation layer 232 electrically separates the second external electrode 32 from the first internal electrode 211 .

[0053] An insulating layer 40 may be located on the outer periphery of the upper surface of the body 20 except for the portion where the external electrode 30 is located. That is, the insulating layer 40 is located on the upper surface of the body 20 except for the portion where the external electrode 30 is located among the regions where the ends of the internal electrodes 210 are exposed, so that the internal electrodes 210 are insulated from the outside. As an example, the insulating layer 40 may be formed to cover the upper surface of the body 20 except for the portion where the external electrode 30 is located. Also, the insulating layer 40 may be located on the upper surface of the substrate 10. FIG. 1 illustrates a case where the insulating layer 40 is located on the upper surface of the body 20 except for the portion where the external electrode 30 is located and on the upper surface of the substrate 10. The insulating layer 40 may be made of alumina (Al2O3), silicon oxide, or the like.

[0054] According to the capacitor 1 according to the embodiment, the body 20 forming the capacitance is accommodated in the body accommodating groove 100 formed in the substrate 10. As a result, the substrate 10 and the body 20 have a secure coupling structure.

[0055] Furthermore, according to the capacitor 1 according to the embodiment, the body 20 is accommodated in the body accommodating groove 100 formed in the substrate 10, so that the capacitor 1 can have a high capacitance while being thin.

[0056] 4 to 11 are diagrams showing a method for manufacturing a capacitor according to an embodiment. A method for manufacturing the capacitor 1 according to one embodiment will now be described with reference to FIGS.

[0057] Referring to Fig. 4, a substrate (S) is provided. The substrate (S) may be a silicon substrate, etc. The substrate (S) may be provided to have an area larger than the area of ​​the two body accommodating grooves 100. Thus, a plurality of body accommodating grooves 100 may be formed on one substrate (S). For convenience of illustration, Fig. 4 shows an area of ​​the substrate (S) where one body accommodating groove 100 is formed.

[0058] Referring to FIG. 5, a body receiving groove 100 extending downward is formed on an upper surface of a substrate (S). The body receiving groove 100 can be formed through an etching process. The etching process can be a wet etching process using chemicals, a dry etching process using plasma, or the like. When the etching process is performed through wet etching, the inclination of the sidewall of the body receiving groove 100 can be 54° or more and 55° or less. When the etching process is performed through dry etching, the inclination of the sidewall of the body receiving groove 100 can be adjusted to have an inclination of 54° or more or 54° or less.

[0059] 6, internal electrode layers (IE1, IE2) and dielectric layers (DL) for forming the body 20 are formed on the substrate (S). The internal electrode layers (IE1, IE2) and dielectric layers (DL) may be formed alternately. For forming the body 20, the internal electrode layers (IE1, IE2) may be formed first, and then the dielectric layers (DL) and the internal electrode layers (IE1, IE2) may be formed alternately. Of the internal electrode layers (IE1, IE2) and dielectric layers (DL) for forming the body 20, the dielectric layer (DL) may be formed last. Thus, the dielectric layer (DL) may be located on the uppermost internal electrode layer (IE1, IE2).

[0060] The internal electrode layers (IE1, IE2) and dielectric layer (DL) can be formed through a deposition process. Chemical vapor deposition (CVD), atomic layer deposition (ALD), etc. can be used to form the internal electrode layers (IE1, IE2). Chemical vapor deposition (CVD), atomic layer deposition (ALD), etc. can be used to form the dielectric layer (DL).

[0061] The internal electrode layers (IE1, IE2) may include a first internal electrode layer (IE1) and a second internal electrode layer (IE2). The first internal electrode layer (IE1) and the second internal electrode layer (IE2) may be formed alternately. Different materials may be used to form the first internal electrode layer (IE1) and the second internal electrode layer (IE2). As an example, the first internal electrode layer (IE1) may be formed using molybdenum, and the second internal electrode 212 layer may be formed using titanium.

[0062] In addition, prior to the formation of the internal electrode layers (IE1, IE2) and the dielectric layer (DL), a lower insulating layer (I) may be formed on the substrate (S). Then, the internal electrode layers (IE1, IE2) and the dielectric layer (DL) for forming the body 20 may be formed on the lower insulating layer (I). Chemical vapor deposition (CVD), atomic layer deposition (ALD), etc. may be used to form the lower insulating layer (I). In addition, the lower insulating layer (I) may be formed by ion implantation into the substrate (S). As an example, the lower insulating layer (I) may be silicon oxide (SiO2), etc.

[0063] 7, the internal electrode layers (IE1, IE2) and the dielectric layer (DL) are removed from the areas outside the body receiving groove 100. The areas outside the body receiving groove 100 can be understood as areas formed in areas higher than the top surface of the substrate (S). The internal electrode layers (IE1, IE2) and the dielectric layer (DL) can be removed through a chemical mechanical polishing (CMP) process.

[0064] 8 and 9, the first internal electrode layer (IE1) and the second internal electrode layer (IE2) are etched at both ends in the length direction (L) of the body receiving groove 100 to form the second separation gap (G2) and the first separation gap (G1). That is, one end of the first internal electrode layer (IE1) is etched from the other end in the length direction (L) of the body receiving groove 100 to form a first internal electrode 211 having one end in the body receiving groove 100 by the second separation gap (G2). Then, one end of the second internal electrode layer (IE2) is etched from one end in the length direction (L) of the body receiving groove 100 to form a second internal electrode 212 having one end in the body receiving groove 100 by the first separation gap (G1). Since the first internal electrode layer (IE1) and the second internal electrode layer (IE2) are provided with different materials, the first internal electrode layer (IE1) and the second internal electrode layer (IE2) can be selectively etched. Dry etching using plasma, wet etching using chemicals, etc. can be used for etching the first internal electrode layer (IE1). Dry etching using plasma, wet etching using chemicals, etc. can be used for etching the second internal electrode layer (IE2). After the first internal electrode layer (IE1) is etched, the second internal electrode layer (IE2) can be etched. Also, after the second internal electrode layer (IE2) is etched, the first internal electrode layer (IE1) can be etched.

[0065] 10, an insulating material is filled into the first separation gap (G1) and the second separation gap (G2) to form a first electrode separation layer 231 and a second electrode separation layer 232. Chemical vapor deposition (CVD), atomic layer deposition (ALD), etc. may be used to fill the insulating material.

[0066] 11, an external electrode 30 is formed on the body 20 on which the internal electrode 210, the first electrode separation layer 231 and the second electrode separation layer 232 are formed. A first external electrode 31 is formed on the portion of the body 20 on which the first electrode separation layer 231 is formed. As a result, the first external electrode 31 is connected to the first internal electrode 211 at one end of the body 20 and is electrically isolated from the second internal electrode 212.

[0067] The second external electrode 32 is formed on the portion of the body 20 where the second electrode separation layer 232 is formed. As a result, the second external electrode 32 is connected to the second internal electrode 212 at the other end of the body 20 and is electrically isolated from the first internal electrode 211.

[0068] Also, a partial region of the first external electrode 31 and a partial region of the second external electrode 32 may be formed on the substrate (S). At this time, prior to the formation of the first external electrode 31 and the second external electrode 32, an upper insulating layer 35 may be formed on the substrate (S) in the region where the first external electrode 31 and the second external electrode 32 are to be formed. The upper insulating layer 35 may be formed of alumina (Al2O3), silicon oxide (SiO2), or the like.

[0069] Also, the insulating layer 40 may be formed on the upper surface of the body 20 in an area other than where the external electrode 30 is located. At this time, the insulating layer 40 may be formed after the external electrode 30 is formed. Alternatively, the insulating layer 40 may be formed prior to the formation of the external electrode 30. At this time, the insulating layer 40 may be formed together with the upper insulating layer 35 prior to the formation of the external electrode 30. Alternatively, the insulating layer 40 may be formed when filling the first separation gap (G1) and the second separation gap (G2) with an insulating material prior to the formation of the external electrode 30.

[0070] Thereafter, when a plurality of bodies 20 are formed on the substrate (S), the substrate (S) may be diced for each region in which the body 20 is formed.

[0071] FIG. 12 is a vertical cross-sectional view taken along the width direction (W) of a capacitor 2 according to another embodiment. 12, a body receiving groove 100a is formed on an upper surface of a substrate 10a. The body receiving groove 100a may have a preset depth in a vertical direction (T). A first depth (D2) of the body receiving groove 100a may be a distance between the upper surface of the substrate 10a and a point from the body receiving groove 100a that is closest to the lower surface of the substrate 10a.

[0072] The width direction (W) side of the body receiving groove 100a may be inclined at a first angle (α2) with respect to the horizontal direction. The first angle (α2) may be the inclination of a straight line connecting the upper end and the lower end of the width direction (W) side of the body receiving groove 100a. The first angle (α2) may have a value of 90° or less.

[0073] The body receiving groove 100a may include a first vertical partition (W2a) and a second vertical partition (W2b).

[0074] The first vertical partition (W2a) and the second vertical partition (W2b) are adjacent to each other in the width direction (W) of the capacitor 2 (body accommodating groove 100a and body 20a). In the substrate 10a, a vertical protrusion 110a is located in the region where the first vertical partition (W2a) and the second vertical partition (W2b) are adjacent to each other. The vertical protrusion 110a is located so as to protrude upward from the bottom surface of the body accommodating groove 100a by a preset length. The upper end of the vertical protrusion 110a is located below the upper surface of the substrate 10a. The vertical distance (T) from the upper end of the vertical protrusion 110a to the upper surface of the substrate 10a is smaller than the first depth (D2) of the body accommodating groove 100a. The vertical protrusion 110a is located away from the width direction (W) side surface of the body accommodating groove 100a. The longitudinal ridges 110a may have a preset length along the length direction (L).

[0075] The first vertical partition (W2a) may have a first width in the width direction (W). The second vertical partition (W2b) may have a second width in the width direction (W). The first width may be the width direction (W) distance from one end of the body accommodating groove 100a to the width direction (W) center of the vertical protrusion 110a. The second width may be the width direction (W) distance from the other end of the body accommodating groove 100a to the width direction (W) center of the vertical protrusion 110a.

[0076] The first width may be provided to be 1 or more relative to the first depth (D2) of the body receiving groove 100a. The second width may be provided to be 1 or more relative to the first depth (D2) of the body receiving groove 100a.

[0077] The body 20a is located inside the body receiving groove 100a. The body 20a includes a first internal electrode 211a, a second internal electrode 212a, and a dielectric layer 220a. The body 20a has a vertical size of a region located on the vertical protrusion 110a that is smaller than a thickness (D2) of the body 20a in accordance with the shape of the body receiving groove 100a.

[0078] A lower insulating layer 201a may be positioned between the body receiving groove 100a and the body 20a.

[0079] An insulating layer 40a may be positioned on the body 20a. The insulating layer 40a may be positioned on the substrate 10a. Capacitor 2 is the same as or similar to capacitor 1 in Figures 1 to 3 except that a vertical protrusion 110a is positioned on substrate 10a and there is a region where the size of body receiving groove 100a and the size of body 20a are reduced in the vertical direction (T) along the width direction (W) in a region other than the sidewalls, and therefore a repeated description will be omitted.

[0080] FIG. 13 is a vertical cross-sectional view taken along the length direction (L) of a capacitor 3 according to still another embodiment. 13, a body receiving groove 100b is formed on an upper surface of a substrate 10b. The body receiving groove 100b may have a preset depth in a vertical direction (T). A first depth (D3) of the body receiving groove 100b may be a distance between the upper surface of the substrate 10b and a point from the body receiving groove 100b that is closest to the lower surface of the substrate 10b.

[0081] The length direction (L) side of the body receiving groove 100b may be inclined at a second angle (β2) with respect to the horizontal direction. The second angle (β2) may be the inclination of a straight line connecting the upper and lower ends of the length direction (L) side of the body receiving groove 100b. The second angle (β) may have a value of 90° or less.

[0082] The body receiving groove 100b may include a first lateral partition (L2a) and a second lateral partition (L2b).

[0083] The first horizontal partition (L2a) and the second horizontal partition (L2b) are positioned adjacent to each other in the length direction (L) of the capacitor 3 (body accommodating groove 100b and body 20b). In the substrate 10b, a horizontal protrusion 110b is positioned in an area where the first horizontal partition (L2a) and the second horizontal partition (L2b) are adjacent to each other. The horizontal protrusion 110b is positioned to protrude upward from the bottom surface of the body accommodating groove 100b by a preset length. The upper end of the horizontal protrusion 110b is positioned below the upper surface of the substrate 10b. The vertical distance (T) from the upper end of the horizontal protrusion 110b to the upper surface of the substrate 10b is smaller than the first depth (D2) of the body accommodating groove 100b. The horizontal protrusion 110b is positioned away from the side surface of the body accommodating groove 100b in the length direction (L). The lateral ridges 110b may have a preset length along the width direction (W).

[0084] The first horizontal partition (L2a) may have a first length in the length direction (L). The second horizontal partition (L2b) may have a second length in the length direction (L). The first length may be the length direction (L) distance from one end of the body accommodating groove 100b to the length direction (L) center of the horizontal protrusion 110b. The second length may be the length direction (L) distance from the other end of the body accommodating groove 100b to the length direction (L) center of the horizontal protrusion 110b.

[0085] The first length may be provided to be 1 or more relative to the first depth (D3) of the body receiving groove 100b. The second length may be provided to be 1 or more relative to the first depth (D3) of the body receiving groove 100b.

[0086] The body 20b is located inside the body receiving groove 100b. The body 20b includes a first internal electrode 211b, a second internal electrode 212b, and a dielectric layer 220b. The body 20b has a vertical size of a region located on the lateral protrusion 110b that is smaller than a thickness (D3) in accordance with the shape of the body receiving groove 100b.

[0087] A lower insulating layer 201b may be positioned between the body receiving groove 100b and the body 20b.

[0088] A first external electrode 31b and a second external electrode 32b are located on the body 20b. The first external electrode 31b is connected to the first internal electrode 211b. The second external electrode 32b is connected to the first internal electrode 211b.

[0089] An insulating layer 40b may be positioned on the body 20b. The insulating layer 40b may be positioned on the substrate 10b. The capacitor 3 is the same as or similar to the capacitor 1 in Figures 1 to 3 except that the lateral protrusion 110b is positioned on the substrate 10b and there is a region where the size of the body receiving groove 100b and the size of the body 20b are reduced in the vertical direction (T) along the length direction (L) in a region other than the sidewall, and therefore a repeated description will be omitted.

[0090] FIG. 14 is a plan view showing dicing lines for dicing in a capacitor manufacturing method according to another embodiment, and FIG. 15 is a drawing showing one side end of a vertical cross-sectional view along the width direction (W) of a capacitor 4 made by the manufacturing method of FIG. 14.

[0091] 14 and 15, the substrate (S1) can be diced along a first dicing line (DIC1) along the width direction (W) and a second dicing line (DIC2) along the length direction (L). As a result, the substrate 10c is separated along the first dicing line (DIC1) and the second dicing line (DIC2), and each separated area becomes the substrate 10c of the capacitor 4.

[0092] Prior to dicing, a body forming portion (BP) is formed on the substrate (S1). A first external electrode forming portion (IEa) and a second external electrode forming portion (IEb) are formed on the body forming portion (BP). A portion of the first external electrode forming portion (IEa) can be formed on the substrate (S1). A portion of the second external electrode forming portion (IEb) can be formed on the substrate (S1). The body forming portion (BP) becomes the body 20c of the capacitor 4 after dicing is completed. The first external electrode forming portion (IEa) becomes the first external electrode after dicing is completed. The second external electrode forming portion (IEb) becomes the second external electrode after dicing is completed.

[0093] In the manufacturing method of the body forming portion (BP), the first external electrode forming portion (IEa), and the second external electrode forming portion (IEb), parts that are the same as or similar to the method described above in Figures 4 to 11 will be omitted, and only the differences will be explained below.

[0094] The body receiving grooves 100c are formed on the substrate (S1). At this time, the body receiving grooves 100c are formed such that two adjacent body receiving grooves 100c are connected to each other along the width direction (W). As a result, the bodies 20c formed in the respective body receiving grooves 100c are connected to each other along the width direction (W) to form one body forming part (BP).

[0095] Thereafter, the body forming parts (BP) are separated from each other by dicing to form the bodies 20c. Thus, after the dicing is completed, the body receiving groove 100c has a structure in which one side in the width direction (W) is opened toward the side of the substrate 10c. Then, one end of the first internal electrode 211c and one end of the second internal electrode 212c can be located on the side of the substrate 10c along the width direction (W). That is, one side of the body 20c in the width direction (W) can be located on the side of the substrate 10c. Thus, the side insulating layer 42 can be formed on the side of the capacitor 4 in the width direction (W) that is diced along the second dicing line (DIC2) to prevent the internal electrode 210c from being exposed to the outside. Thus, the side insulating layer 42 is located on one side of the body 20c in the width direction (W) located on the side of the substrate 10c. The formation of the side insulating layer 42 can be performed after the dicing process.

[0096] Except for the fact that one widthwise (W) side of the body accommodating groove 100c is open to the widthwise (W) side of the capacitor 4, the structure of the capacitor 4 is the same or similar to that of the capacitor 1 in FIG. 1, so a description thereof will be omitted.

[0097] FIG. 16 is a plan view showing dicing lines for dicing in a method for manufacturing a capacitor according to still another embodiment.

[0098] 16, the substrate (S2) can be diced along a first dicing line (DIC1a) along the width direction (W) and a second dicing line (DIC2a) along the length direction (L). As a result, the substrate (S2) is separated along the first dicing line (DIC1a) and the second dicing line (DIC2a), and each separated region becomes a capacitor 4.

[0099] Prior to dicing, a body forming portion (BPa) is formed on the substrate (S2). A first external electrode forming portion (IEc), a dicing external electrode forming portion (IEd), and a second external electrode forming portion (IEe) may be formed on the body forming portion (BPa). A portion of the first external electrode forming portion (IEc) may be formed on the substrate (S2). A portion of the dicing external electrode forming portion (IEd) may be formed on the substrate (S2). The dicing external electrode forming portion (IEd) may be formed over two body forming portions (BPa) adjacent to each other in the length direction (L). Thus, the first dicing line (DIC1a) is positioned so as to cross the dicing external electrode forming portion (IEd). A portion of the second external electrode forming portion (IEe) may be formed on the substrate (S2). The body forming portion (BPa) becomes the body 20c of the capacitor 4 after dicing is completed. The first external electrode forming portion (IEc) becomes the first external electrode after dicing is completed. The second external electrode forming portion (IEe) becomes the second external electrode after dicing is completed. The external electrode forming portion for dicing (IEd) is separated by dicing, and one side becomes the first external electrode and the other side becomes the second external electrode.

[0100] In the manufacturing methods of the body forming section (BPa), the first external electrode forming section (IEc), the external electrode forming section for dicing (IEd), and the second external electrode forming section (IEe), parts that are the same as or similar to the method described above in Figures 4 to 11 will be omitted, and only the differences will be explained below.

[0101] The body receiving grooves 100c are formed on the substrate (S2). At this time, the body receiving grooves 100c are formed such that two adjacent body receiving grooves 100c are connected to each other along the width direction (W). As a result, the bodies 20c formed in the respective body receiving grooves 100c are connected to each other along the width direction (W) to form one body forming part (BPa).

[0102] Thereafter, the body forming portion (BPa) is separated by dicing to form the bodies 20c. Thus, after the dicing is completed, the body receiving groove 100c has a structure in which one side in the width direction (W) is open to the side in the width direction (W) of the capacitor 4. At this time, the structure of the body 20c formed by dicing the body forming portion (BPa) is the same as or similar to that shown in FIG. 15, so a repeated description will be omitted.

[0103] Also, the external electrode forming part for dicing (IEd) is formed across two body forming parts (BPa) adjacent to each other along the length direction (L). Thus, the external electrode forming part for dicing (IEd) is connected to the second internal electrode (212c) in one body forming part (BPa) and to the first internal electrode (211c) in the other body forming part (BPa). Then, the external electrode forming part for dicing (IEd) is diced together with the substrate (S2) in the dicing process, and one side becomes the second external electrode from one capacitor 4 and the other side becomes the first external electrode from the other capacitor 4. Then, a dicing pattern generated in the dicing process may be located on at least one of the first external electrode and the second external electrode by dicing the external electrode forming part for dicing (IEd). At this time, the dicing pattern may be a pattern generated by friction with the blade in the dicing process using the blade. Also, the dicing pattern may be a crack pattern generated in the dicing process using the laser.

[0104] Although the embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements made by those skilled in the art using the basic concept of the present invention defined in the following claims also fall within the scope of the present invention. [Explanation of symbols]

[0105] 10 Substrate 20 Body 30 External electrode 31 1st external electrode 32 2nd external electrode 40 Insulating layer 100 Body housing groove 201 Lower insulating layer 210 Internal electrode 211 1st internal electrode 212 2nd internal electrode 220 Dielectric layer 231 1st electrode separation layer 232 2nd electrode separation layer

Claims

1. a substrate having a body receiving groove formed therein and having a first depth from an upper surface thereof; a first internal electrode and a second internal electrode laminated with a dielectric layer therebetween; and a body located in the body receiving groove; a width of the body receiving groove that is greater than or equal to 1 relative to the first depth of the body receiving groove, and a length of the body receiving groove that is greater than or equal to 1 relative to the first depth of the body receiving groove.

2. a first external electrode disposed on an upper surface of the body at one end in the longitudinal direction; The capacitor of claim 1 , further comprising a second external electrode located on an upper surface of the other end of the body in the longitudinal direction.

3. The capacitor of claim 2 , wherein the body further comprises a first electrode separation layer located between the first external electrode and the second internal electrode.

4. 4. The capacitor of claim 3, wherein at one end of the body in the longitudinal direction, one end of the second internal electrode is structured to be recessed inside the body receiving groove, and the first electrode separation layer is located in a space formed between two adjacent ones of the dielectric layers.

5. The capacitor of claim 2 , wherein the body further comprises a second electrode separation layer located between the second external electrode and the first internal electrode.

6. 6. The capacitor of claim 5, wherein at the other end of the body in the longitudinal direction, one end of the first internal electrode is structured to be recessed inside the body receiving groove, and the second electrode separation layer is located in a space formed between two adjacent ones of the dielectric layers.

7. 2. The capacitor of claim 1, further comprising a lower insulating layer located between the body receiving groove and the body.

8. a first external electrode connected to the first internal electrode on an upper surface of the body; a second external electrode connected to the second internal electrode on an upper surface of the body; The capacitor of claim 1 , further comprising an insulating layer located on an outer periphery of the top surface of the body other than where the first external electrode and the second external electrode are located.

9. 2. The capacitor of claim 1, wherein the body receiving groove has a structure in which one side in the width direction is open toward a side surface of the substrate, and the one side surface in the width direction of the body is located on a side surface of the substrate.

10. 2. The capacitor of claim 1, wherein the substrate is formed with a vertical protrusion that protrudes upward from a bottom surface of the body receiving groove and is spaced apart from a width direction side surface of the body receiving groove.

11. 2. The capacitor of claim 1, wherein the substrate is formed with a lateral protrusion that protrudes upward from a bottom surface of the body receiving groove and is spaced apart from a longitudinal side surface of the body receiving groove.

12. a first external electrode connected to the first internal electrode on an upper surface of the body; a second external electrode connected to the second internal electrode on an upper surface of the body, The capacitor according to claim 1 , wherein in the lower regions of the first and second external electrodes, a boundary between the body and the substrate is inclined with respect to a horizontal direction perpendicular to a vertical direction.

13. 2. The capacitor of claim 1, wherein a ratio of a width of the body receiving groove to a depth of the body receiving groove is from 1 to 44, and a ratio of a length of the body receiving groove to a depth of the body receiving groove is from 1 to 54.

14. 2. The capacitor of claim 1, wherein the body receiving groove has a depth of 100 [mu]m or less.

15. forming a body receiving groove extending downward on an upper surface of the substrate; forming an internal electrode layer and a dielectric layer on the substrate; removing a region of the internal electrode layer and the dielectric layer located outside the body receiving groove to form a body including the internal electrode formed through the internal electrode layer and the dielectric layer; forming an external electrode on the body, the external electrode being connected to the internal electrode.

Images