Shallow etching process chamber

Abstract

To provide a shallow etching process chamber.SOLUTION: A shallow etching process chamber comprises: a susceptor disposed inside a chamber space 11; lift rings 13 formed on both sides of the susceptor; and moving means for raising and lowering the lift rings 13, where a wafer (W) can be raised and lowered above the susceptor when the lift rings 13 are raised and lowered.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a shallow etch process chamber, and more particularly, to a shallow etch process chamber capable of adjusting an etching process space during an etching process. [Background technology]

[0002] As semiconductor manufacturing processes are miniaturized and three-dimensionalized into 3D structures, some etching processes require a technique to remove thin oxide films or thin films with very high aspect ratios. In addition, in order to minimize the loading effect, which is the difference in the amount of etching between relatively wide and narrow patterns, a technique to repeatedly etch gradually at the atomic layer level without the loading effect is being developed. As such high aspect ratio atomic layer etching techniques, ALE (Atomic Layer Etching), ALR (Atomic Layer Removal) or dry cleaning are in the process of development. The common feature of such shallow etching processes is that they include an adsorption step by a self-limited modification reaction at a low temperature of 80℃ or less, and a removal step to remove the modified atomic layer level thin film at a high temperature of 120℃ or more. In known equipment for shallow etching, both the adsorption step and the removal step are performed using thermal processes, and such equipment has the disadvantage of requiring a long process time and limiting productivity. Also, equipment has been developed that uses plasma energy for the adsorption step and thermal energy for the removal step, and various attempts have been made to gradually change between low and high temperatures. In relation to ALE, Patent Document 1 discloses a method and apparatus for processing a semiconductor substrate. Also, Patent Document 2 discloses a method for manufacturing a microelectronic workpiece, including the formation of a patterned structure on the microelectronic workpiece. However, the prior art does not disclose an ALE or dry cleaning technique that can simultaneously satisfy high efficiency and productivity.

[0003] The present invention is intended to solve the problems of the prior art and has the following objects. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Republic of Korea Patent Publication No. 10-2017-0124087 (Lam Research Corporation, published 2017.11.09) Etching of substrate using ALE and selective deposition [Patent Document 2] Republic of Korea Patent Publication No. 10-2020-0116273 (Tokyo Electron Limited, published on October 7, 2020) Atomic layer etching of tungsten or other metal layers Summary of the Invention [Problem to be solved by the invention]

[0005] SUMMARY OF THE PRESENT EMBODIMENT An object of the present invention is to provide a shallow etching process chamber capable of performing a low-temperature adsorption step using plasma energy while simultaneously satisfying high efficiency and productivity. [Means for solving the problem]

[0006] According to a suitable embodiment of the present invention, the shallow etch process chamber includes a susceptor disposed inside a chamber space; lift rings formed on both sides of the susceptor; and a moving means for raising and lowering the lift ring, so that the wafer can be freely raised and lowered above the susceptor by raising and lowering the lift ring.

[0007] According to another suitable embodiment of the present invention, the apparatus may further include an internal showerhead and an external showerhead disposed in the upper portion of the chamber space 11, and a showerhead heater is disposed in the internal showerhead.

[0008] According to another suitable embodiment of the present invention, the apparatus further includes a baffle disposed between the internal showerhead and the external showerhead.

[0009] According to yet another suitable embodiment of the present invention, the rising lift ring is brought into contact with a baffle.

[0010] According to yet another preferred embodiment of the present invention, a process space is formed between the internal showerhead and the wafer by an elevated lift ring.

[0011] According to yet another suitable embodiment of the present invention, the apparatus further includes a ring heater disposed inside the lift ring.

[0012] According to yet another suitable embodiment of the invention, the moving means includes a linear gear and a lift shaft movable along the linear gear.

[0013] According to yet another suitable embodiment of the present invention, the showerhead further includes an internal showerhead and a moving gas wall that is movable up and down to surround an upper portion of the internal showerhead.

[0014] According to yet another suitable embodiment of the present invention, the baffle defines flow paths.

[0015] According to yet other suitable embodiments of the present invention, the lift ring contacts the bottom surface of the baffle, contacts a portion of the bottom surface of the baffle, or contacts the bottom surface and the inner surface of the baffle. Effect of the Invention

[0016] The shallow etching process chamber according to the present invention performs a low temperature adsorption step and a high temperature removal step in one chamber using plasma energy, and the temperature of the wafer is quickly changed to efficiently perform the adsorption step. This improves the productivity and improves the process efficiency of removing thin films with high aspect ratios. The shallow etching process chamber according to the present invention is applicable to various fine processes including the ALE process, and the present invention is not limited thereto. [Brief description of the drawings]

[0017]

Figure 1

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Figure 5

[0018] Hereinafter, the present invention will be described in detail with reference to the embodiments shown in the accompanying drawings, but the embodiments are for a clear understanding of the present invention, and the present invention is not limited thereto. In the following description, components having the same reference numerals in different drawings have similar functions, so that they will not be described repeatedly unless necessary for understanding the invention, and known components will be described briefly or omitted, but will not be understood to be excluded from the embodiments of the present invention.

[0019] FIG. 1 illustrates an embodiment of a shallow etch process chamber according to the present invention.

[0020] Referring to FIG. 1, the shallow etching process chamber includes a susceptor disposed inside a chamber space 11; lift rings 13 formed on both sides of the susceptor; and a moving means for raising and lowering the lift ring 13. The lift ring 13 is raised and lowered to allow a wafer (W) to be freely raised and lowered above the susceptor.

[0021] The chamber space 11 is separated from the outside by a bottom surface and a surrounding wall, and a cover (C) may be attached to the upper side of the chamber space 11. The chamber space 11 is made in a vacuum state, and plasma is generated or generated plasma is introduced into the chamber space 11. The chamber space 11 may have various structures for performing a semiconductor process or an etching process. A base block (B) is formed in the chamber space 11, and a susceptor is disposed on an upper part of the base block (B) to fix a wafer (W). The susceptor may be various means for fixing the wafer (W), and may include a heater or a cooling water flow path. The susceptor may include, for example, an electrostatic chuck 12, and although an electrostatic chuck will be described below as an embodiment, the susceptor is not limited thereto. An electrostatic chuck 12 is disposed on the upper side of the base block (B), a heater 121 is disposed inside the electrostatic chuck 12, and a wafer (W) for an etching process is fixed on the upper surface of the electrostatic chuck 12. A lift ring 13 is disposed around the electrostatic chuck 12 to hold the wafer W on the upper surface of the electrostatic chuck 12, thereby maintaining a uniform plasma density and preventing contamination of the wafer W. The lift ring 13 may have the same or similar function as an edge ring, and the edge ring may also serve as the lift ring 13. A heater 131 is disposed inside the lift ring 13 to adjust the temperature of the lift ring 13. The lift ring 13 may support the peripheral portion of the wafer W, and both opposing sides of the lift ring 13 may be moved up and down by a moving means. As the lift ring 13 supporting the wafer W moves upward, the wafer W may move upward along with the lift ring 13. In this manner, the lift ring 13 may move the wafer W upward or downward. The moving means includes linear gears 14a, 14b and lift shafts 15a, 15b that may move along the linear gears 14a, 14b. The first and second linear gears 14a and 14b may extend vertically from the bottom surface of the chamber space to the upper side, and meshing teeth may be formed on one surface of the first and second linear gears 14a and 14b along the extension direction of the first and second linear gears 14a and 14b. Lift shafts 15a and 15b may be connected to the first and second linear gears 14a and 14b, respectively, to be able to move up and down.The upper ends of the lift shafts 15a, 15b are coupled to the undersides of the opposing portions of the lift ring 13, and the first and second motors (M1, M2) are driven to move the lift shafts 15a, 15b up and down along the linear gears 14a, 14b, thereby moving the lift ring 13 up and down. For example, the lift shafts 15a, 15b may include pinion gears that mesh with the linear gears 14a, 14b. The lift shafts 15a, 15b may be raised and lowered relative to the linear gears 14a, 14b in various ways, and the present invention is not limited thereby. Electric power for temperature control is supplied to the heater 121 disposed in the electrostatic chuck 12 or the heater 131 disposed in the lift ring 13, and electric power is supplied from the first, second and third power supply means (P1, P2, P3) to the electrostatic chuck heater 121 and the lift ring heater 131 through the first, second and third cables 16a, 16b and 16c, thereby controlling the temperature of the electrostatic chuck 12 or the lift ring 13. For example, the electrostatic chuck 12 is controlled to a temperature in the range of 20 to 80°C, and the lift ring 13 is controlled to a temperature in the range of 150 to 300°C. Electric power is supplied to both opposing portions of the heater 131 disposed inside the lift ring 13, thereby controlling the temperature of the lift ring 13. The heater 131 inside the lift ring 13 may be formed in various ways, for example, the heater 131 may be circular as a whole or the heater 131 may be disposed on both sides, and the present invention is not limited thereto.

[0022] A cover (C) is attached to the upper surface of the chamber space 11, and an inflow path (P) for guiding plasma from a remote plasma source (RPS) to the inside of the chamber space may be formed in the center of the cover (C). An internal shower head 17a is disposed under the cover (C), and an external shower head 17b is disposed around the internal shower head 17a. The internal shower head 17a or the external shower head 17b may be made of a material such as aluminum, but is not limited thereto. The internal shower head 17a may be in the shape of a circular plate or a polygonal plate, or may be in the shape of a flat plate, and a through hole may be formed in the entire internal shower head 17a from the top to the bottom for the inflow of plasma or gas. A heater 171 is disposed inside the internal shower head 17a, and power is supplied from a power supply means (P4) through a cable 19, so that the temperature of the internal shower head 17a is adjusted to a range of 300 to 400°C. The edge of the internal showerhead 17a is inclined downward, and the external showerhead 17b is disposed outside the internal showerhead 17a. The external showerhead 17b may be inclined outward such that the edge of the internal showerhead 17a is inclined. The external showerhead 17b may have a number of uniformly formed through-holes for guiding plasma or gas to the chamber space 11, as in the internal showerhead 17a. A baffle 18 may be disposed between the internal showerhead 17a and the external showerhead 17b, and at least one slit or through-hole may be formed in the baffle 18 in a horizontal or similar direction. The baffle 18 may be made of, for example, quartz or a similar material, but is not limited thereto. The baffle 18 includes an inclined outer surface, and the inclined outer surface is connected to the inclined surface of the edge of the internal showerhead 17a and the inclined surface of the external showerhead 17b. The baffle 18 can be made of various structures capable of blocking heat transfer between the internal shower head 17a and the external shower head 17b and preventing an attack by radicals, but the present invention is not limited thereto. A process of efficiently performing an etching process in an etching process chamber having such a structure will be described below.

[0023] FIG. 2 illustrates an embodiment of the working configuration of a process chamber according to the present invention.

[0024] 2, during the etching process, the adsorption process is performed in a state where the wafer (W) is positioned above the vacuum chuck 12 as shown in (A), and the removal process is performed in a state where the wafer (W) is moved upward as shown in (B). A remote plasma source (RPS) is introduced into the chamber space 11 through an inlet path (P), and NH 3 , N.F. 3The plasma, which is introduced in the presence of Ar or Ar, creates ions or radicals for the modification step. The wafer (W) is fixed on the upper side of the electrostatic chuck 12. Specifically, the wafer (W) is fixed on a susceptor, which is made of an aluminum material and includes a heater or a cooler. The internal showerhead 17a formed on the upper side of the electrostatic chuck 12 may have a function of uniformly flowing the formed ions and radicals to the upper side of the wafer (W) fixed on the susceptor. The temperature of the internal showerhead 17a is maintained at 300 to 400°C by power supplied to the heater 171 through a cable 19 from a power supply means. The external showerhead 17b may have a function of controlling the process uniformity between the side of the internal showerhead 17a and the surrounding wall of the chamber space 11. Gas may flow toward the side of the internal showerhead 17a or the external showerhead 17b through slits or through holes formed in the baffle 18 along the horizontal direction. The baffle 18 can have a function of blocking the transfer of heat from the internal shower head 17a to the external shower head 17b, and is made of quartz or a similar material to prevent attack by radicals. The internal shower head 17a, the external shower head 17b, and the surrounding wall or cover (C) of the chamber space 11 are made of aluminum or a similar material. The wafer susceptor is made of aluminum or a similar material, and is maintained at a temperature of 20 to 80°C by power supplied to the heater 121 through a cable by a power supply means, or by a cooling means. The lift ring 13 is in the shape of a ring made of aluminum or quartz, and has the heater 131 disposed therein as described above. Power is supplied to the heater 131 from the power supply means through the cables 16b and 16c, and the lift ring 13 is maintained at a temperature of 150 to 300°C. In this state, plasma is supplied from a remote plasma source (RPS) with a power of 500 to 3000 W, and NH 3 , N.F. 3The adsorption process is performed in the presence of Ar. The inside of the chamber space 11 may be at about 400° C. in the area of ​​the internal shower head 17a, about 150° C. in the area of ​​the external shower head 17b, about 200° C. in the area adjacent to the wafer (W), about 100° C. in the area below the wafer (W), and about 50° C. in the area of ​​the susceptor. If the adsorption step is completed under these process conditions, the lift pins 13 may be moved upward by a moving means including linear gears 14a, 14b, lift shafts 15a, 15b, or motors (M1, M2). The lift pins 13 contact the wafer (W) to a point about 2 mm from the circumference, and the lift ring 13 rises and contacts the baffle 18. As a result, a removal process space having a narrow size in which a removal process is performed is formed by the internal shower head 17a, the baffle 18, the lift ring 13, and the wafer (W). In this state, the inflow of plasma from the remote plasma source (RPS) is cut off, and the thin film formed on the wafer (W) is removed by Ar present in the removal process space, as shown in FIG. 2B. Ar required for the removal process in the removal process space is introduced into the removal process space through the through holes formed in the internal showerhead 17a. After the removal process is completed, the remaining Ar is discharged to the outside through the through holes or slots formed in the baffle 18. The set temperature of the high-temperature internal showerhead 17a, the distance between the wafer (W) and the internal showerhead 17a, or the temperature of the wafer (W) is appropriately adjusted. In addition, the distance between the internal showerhead 17a and the wafer (W), the gas flow capacity of the baffle 18, and the gas flow rate are controlled in the removal process space, and thus the internal pressure of the removal process space is controlled. The internal showerhead 17a and the lift ring 13 may have various structures necessary for forming a removal process space and controlling temperature or pressure, for example, various structures for controlling gas flow and pressure while restricting the gas flow. Also, as described below, a moving gas wall is disposed above the internal showerhead 17a to improve process uniformity by controlling the gas flow rate and pressure in the removal process space.The internal showerhead 17a, the lift ring 13, or the baffle 18 may have various structures capable of controlling the temperature, pressure, space size, or gas flow inside the removal process space, and the present invention is not limited thereby.

[0025] FIG. 3 illustrates an embodiment of the relative positioning of a baffle and a lift ring in a process chamber according to the present invention.

[0026] Referring to FIG. 3, the lift ring 13 contacts the bottom surface of the baffle 18, or contacts a part of the bottom surface of the baffle 18, or contacts the bottom surface and the inner side of the baffle 18. The linear gears 14a, 14b and the lift shafts 15a, 15b are operated by driving the motors (M1, M2), and the lift ring 13 moves upward and contacts the baffle 18. Referring to FIG. 3B, the lift ring 13 may be ring-shaped as a whole, and the inner part may be flat, tilting outwardly in an upward direction, and then becoming flat again. Also, the baffle 18 may have a flat upper side, which is then inclined downward. And the lower surface of the baffle 18 may be flat. With this structure of the lift ring 13 and the baffle 18, the outer flat surface of the lift ring 13 may contact the bottom surface of the baffle 18, and thus the side of the removal process space may be sealed, and gas such as Ar may flow through the through holes formed in the baffle 18.

[0027] 3B, the baffle 18 extends a relatively large length in the inward direction of the internal showerhead 17a, and the outer flat surface of the lift ring 13 may contact a portion of the bottom surface of the baffle 18. A gap may be formed between the inner flat surface of the lift ring 13 and the uncontacted flat surface of the baffle 18.

[0028] Referring to FIG. 3C, the lift ring 13 may have an inner plane, an inclined plane extending outward, a middle plane, and a step plane formed under the middle plane. The edge of the wafer (W) may contact the inner plane, and the inner plane may have a length of, for example, 2.0 to 3.0 mm. The baffle 18 includes an inner vertical plane and a bottom plane, and a vertical boundary surface formed by the middle plane and the step plane contacts the vertical plane. The bottom surface of the baffle 18 contacts the step plane. With this contact structure, a guide hole connected to the through hole of the baffle 18 may be formed in the lift ring 13. As described above, the lift ring 13 or the baffle 18 may have various structures that can contact each other to seal the side of the removal process space, and the present invention is not limited thereto.

[0029] FIG. 4 illustrates another embodiment of a shallow etch process chamber in accordance with the present invention.

[0030] Referring to FIG. 4, the etching process chamber further includes a movable gas wall 42 that can be raised and lowered to surround an upper portion of the internal showerhead 17a. As shown in FIG. 4A, the movable gas wall 42 may be located on the upper side of the chamber cover (C) during the adsorption process. The movable gas wall 42 may be a hollow cylinder or a hollow polyhedron surrounding the internal showerhead 17a. Gear units 41a and 41b for moving the movable gas wall 42 are disposed at positions facing each other on the movable gas wall 42, and as shown in FIG. 4B, the gas movable wall 42 may be moved downward along the gear units 41a and 41b by the operation of the motor (M3). The gas movable wall 42 may be located to surround an upper portion of the internal showerhead 17a. As a result, the inflow of gas into the removal process space through the through holes formed in the internal showerhead 17a is restricted or adjusted. Depending on the shape of the internal showerhead 17a, the gas transfer wall 42 can have a suitable structure and move up and down in various ways, which is not intended to limit the present invention.

[0031] FIG. 5 illustrates an embodiment of a process for performing an ALE process in an etching process chamber according to the present invention.

[0032] Referring to FIG. 5, the process of performing the ALE process in the etching process chamber includes a step of placing and fixing a wafer on a susceptor of an electrostatic chuck (P51); a step of controlling the temperature inside the etching process chamber and inducing plasma into the chamber to perform an adsorption process step or a self-limiting deformation process step (P62); a step of lifting the edge ring to form a removal process space above the process chamber after the adsorption process is completed (P53); a step of controlling the temperature of the edge ring, the pressure or gas flow conditions of the removal process space (P54); and a step of performing a removal process using Ar (P55).

[0033] Ions and radicals for the adsorption process are formed by a remote plasma source, and a showerhead is disposed so that the formed ions and radicals flow uniformly toward the wafer. The showerhead is maintained at a temperature of 300 to 400° C., and an external showerhead is disposed between the side of the showerhead and the chamber wall for adjusting the process uniformity. A baffle is disposed between the showerhead and the external showerhead for flowing gas to the side. The baffle is made of a material such as quartz to prevent attack by radicals while blocking heat transfer. The showerhead, the external showerhead, and the chamber wall are made of an aluminum material. The wafer susceptor is also made of an aluminum material and may include a heater or a cooling water path for the flow of cooling water. An edge ring on the side of the wafer is made of an aluminum material or a quartz material, and a heater is disposed inside the edge ring. The edge ring having this structure is maintained at a temperature of 150 to 300° C. Under these conditions, plasma flows into the chamber to perform the adsorption process (P52). The edge ring includes an edge ring lifting means, and the edge ring is raised to the position of the shower head by the lifting means, and the wafer is raised (P53). In the adsorption step, the wafer is held at a temperature of 20 to 80° C. while being fixed to the susceptor, and a self-limiting transformation reaction process is performed by ions and radicals generated by a remote plasma source. In the removal step, which is performed with the wafer raised and the removal process area formed, the wafer is moved upward by the edge ring in a high temperature state of 150 to 300° C., and can be moved upward to a position where the edge ring contacts the baffle. As a result, the wafer is positioned adjacent to the shower head held at a temperature of 300 to 400° C. In this way, a removal process space is formed by the high temperature shower head, the wafer, the baffle, and the edge ring, and the temperature, pressure, or gas flow conditions of the removal process space are controlled (P14). In the removal process space of a small size formed in this way, a gas such as Ar for carrying out the removal process is filled in the removal process space through a through hole formed in the shower head.The gas is discharged to the outside through a through hole or slit formed in the baffle. In the removal step, the temperature of the wafer is appropriately controlled by adjusting the setting temperature of the high temperature shower head and the distance between the wafer and the shower head, and a removal process for removing the thin film formed by the modification process is performed (P55). The pressure of the newly formed removal process space is controlled by the distance between the shower head and the wafer, the gas flow capacity of the baffle, or the gas flow rate. The size of the removal process space or the gas flow rate or pressure is controlled by various shapes of the baffle or edge ring, and the present invention is not limited thereto. Optionally, a moving gas wall may be formed above the shower head to improve uniformity. Various configurations for the removal process conditions may be added in the removal process space, and the present invention is not limited thereto.

[0034] Although the present invention has been described in detail with reference to the embodiments presented above, those skilled in the art may make various modifications and alterations without departing from the technical spirit of the present invention by referring to the embodiments presented above. The present invention is not limited by such modifications and alterations, but is limited only by the scope of the claims. [Explanation of symbols]

[0035] 11: Chamber space 12: Electrostatic chuck 13: Lift Ring 14a, 14b: Linear gear 15a, 15b: Lift shaft 17a: Internal shower head 17b:External shower head 18: Baffle 42: Gas moving wall 121, 131, 171: Heater

Claims

1. a susceptor disposed inside the chamber space 11; Lift rings 13 formed on both sides of the susceptor; a moving means for raising and lowering the lift ring 13; The wafer (W) can be freely raised and lowered above the susceptor by raising and lowering the lift ring 13.

1. A shallow etch process chamber comprising:

2. The chamber space 11 further includes an inner shower head 17a and an outer shower head 17b disposed in the upper portion of the chamber space 11, and a shower head heater 171 is disposed in the inner shower head 17a.

10. The shallow etch process chamber of claim 1.

3. The shower head further includes a baffle disposed between the inner showerhead and the outer showerhead.

3. The shallow etch process chamber of claim 2.

4. The rising lift ring 13 comes into contact with the baffle 18.

4. The shallow etch process chamber of claim 3.

5. The raised lift ring 13 forms a process space between the internal showerhead 17a and the wafer W.

10. The shallow etch process chamber of claim 1.

6. The lift ring 13 further includes a ring heater 131 disposed inside the lift ring 13.

10. The shallow etch process chamber of claim 1.

7. The moving means includes linear gears 14a, 14b and lift shafts 15a, 15b movable along the linear gears 14a, 14b.

10. The shallow etch process chamber of claim 1.

8. The shower head 17a further includes a movable gas wall 42 that can be raised and lowered to surround the upper portion of the shower head 17a.

10. The shallow etch process chamber of claim 1.

9. The baffle 18 forms a flow path.

10. The shallow etch process chamber of claim 1.

10. The lift ring 13 is in contact with the bottom surface of the baffle 18, in contact with a part of the bottom surface of the baffle 18, or in contact with the bottom surface and the inner surface of the baffle 18.

5. The shallow etch process chamber of claim 4.

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