Display device

Abstract

To provide a highly reliable light-emitting device which can prevent destruction of a light-emitting element when physical force is externally applied.SOLUTION: A display device comprises: a light-emitting element which is made up of a first electrode layer, a light-emitting layer, and a second electrode layer formed above a first substrate; a structure formed above the first substrate; a second substrate provided so as to face the first substrate; and an adhesion layer provided between the first substrate and the second substrate. The light-emitting layer is separated by the structure. The adhesiveness between the structure and the adhesion layer, or between the structure and the second electrode layer is enhanced. In this way, it is possible to provide a highly reliable light-emitting device which can prevent destruction of the light-emitting element.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One embodiment of the present invention relates to a light-emitting device that utilizes electroluminescence. The present invention relates to electronic devices using the device. [Background technology]

[0002] In recent years, electroluminescence (EL) Research and development of light-emitting devices using this material is currently underway. The basic structure of these light-emitting devices is as follows: A layer containing a light-emitting substance is sandwiched between a pair of electrodes. This allows light emission from the luminescent substance.

[0003] Since the above-mentioned light-emitting element is a self-luminous type, a light-emitting device using this element has excellent visibility and a backlight. It has the advantage of not needing a light and consuming little power. Furthermore, it can be made thin and lightweight. It also has the advantage of having a high response speed.

[0004] In addition, the light-emitting device having the above-mentioned light-emitting element is thin and lightweight, and has flexibility and impact resistance. Since this technology can be used for flexible substrates, it is being considered for use in flexible substrates. The boards are not only used for light-emitting devices, but also for semiconductor devices that function by utilizing the semiconductor properties. It is also applied to.

[0005] The manufacturing method of a semiconductor device using a flexible substrate includes a method for manufacturing a semiconductor device using a glass substrate or a quartz substrate. After fabricating semiconductor elements such as thin film transistors on the substrate, the substrate is removed from the substrate to another substrate (e.g. A technology has been developed to transfer semiconductor elements onto flexible substrates. In order to transfer the semiconductor element to the substrate, the semiconductor element must be separated from the substrate used to fabricate the semiconductor element. A process for doing so is necessary.

[0006] For example, Patent Document 1 describes the following peeling technique using laser ablation: A separation layer made of amorphous silicon or the like is formed on the substrate, and a thin-film element is formed on the separation layer. A peelable layer is provided, and the layer to be peeled is adhered to the transfer body by an adhesive layer. The separation layer is ablated to cause separation.

[0007] Patent Document 2 describes a technique for performing peeling using physical force such as by hand. In Reference 2, a metal layer is formed between a substrate and an oxide layer, and the interface between the oxide layer and the metal layer is bonded. By utilizing the weak bonding strength between the oxide layer and the metal layer, the layer to be peeled off can be peeled off at the interface between the oxide layer and the metal layer. and the substrate.

[0008] In addition, in Patent Document 2, an insulating layer is formed on a light-emitting element including an anode, an organic light-emitting layer, and a cathode. An insulating film is formed, and then the interlayer insulating film and the support are bonded together with an adhesive layer. By peeling at the interface between the organic layer and the metal layer, the peeled layer having the light emitting element is held by the adhesive layer. A light-emitting device using a flexible substrate is produced by bonding the flexible substrate to a film substrate. [Prior art documents] [Patent documents]

[0009] [Patent Document 1] Japanese Patent Application Publication No. 10-125931 [Patent Document 2] JP 2003-174153 A Summary of the Invention [Problem to be solved by the invention]

[0010] Here, the light-emitting element formed on the peeled layer has a structure in which a light-emitting layer is sandwiched between a pair of electrodes. When an organic compound is used for the light-emitting layer, the cathode or anode is formed in contact with the light-emitting layer. Weak adhesion to the electrode. When the adhesion between the light-emitting layer and the electrode is weak, the peeling layer and the layer to be peeled off are physically separated. When the light-emitting layer is separated from the electrode by applying a physical force, the light-emitting layer may peel off at the interface between the electrode and the light-emitting layer.

[0011] Furthermore, when the above-mentioned light-emitting element is used as a light-emitting device using a flexible substrate, it is difficult to bend or warp the light-emitting element. When physical forces such as these are applied from the outside, peeling occurs at the interface between the light-emitting layer and the electrode, causing destruction. There is a possibility that this may happen.

[0012] In view of the above problems, one embodiment of the invention disclosed in this specification and the like is a method for manufacturing a semiconductor device that is capable of preventing a semiconductor device from being subjected to an external physical force. The present invention provides a highly reliable light emitting device in which the light emitting element is prevented from being destroyed when the light emitting element is heated. One of the challenges is to: [Means for solving the problem]

[0013] One aspect of the present invention is a semiconductor device comprising a first electrode layer, a light-emitting layer, and a second electrode layer formed on a first substrate. a light emitting element, a structure formed on a first substrate, and a A second substrate and an adhesive layer provided between the first substrate and the second substrate, and the light-emitting layer is The structure is separated to strengthen the adhesion between the structure and the adhesive layer or between the structure and the second electrode layer. As a result, a highly reliable light emitting device is realized in which damage to the light emitting element is suppressed. More details are as follows.

[0014] One aspect of the present invention is a semiconductor device comprising a first electrode layer formed on a first substrate and a semiconductor device formed in contact with the first electrode layer. a light-emitting element having a light-emitting layer formed on the first electrode layer and a second electrode layer formed in contact with the light-emitting layer; A structure formed on a first substrate, a second substrate provided opposite to the first substrate, and and an adhesive layer provided between the first substrate and the second substrate, and the light-emitting layer is separated by a structure. and the structure is a light emitting device having at least a portion in contact with the adhesive layer.

[0015] Another aspect of the present invention is a semiconductor device comprising a first electrode layer formed on a first substrate and a semiconductor device in contact with the first electrode layer. a light-emitting element having a light-emitting layer formed by the above-mentioned method and a second electrode layer formed in contact with the light-emitting layer; A structure formed on a first substrate, a second substrate provided opposite to the first substrate, and an adhesive layer provided between the first substrate and the second substrate. The light-emitting layer is formed by a structure. Separately, the structure is a light emitting device having at least a portion in contact with the second electrode layer.

[0016] In each of the above configurations, the first substrate and the second substrate may be flexible. In each of the above configurations, the first electrode may be connected to a transistor. In each of the above configurations, the second substrate may have a colored layer that transmits light in a specific wavelength range. good.

[0017] In each of the above structures, the light-emitting layer includes a hole injection layer, a hole transport layer, an electron transport layer, and an electron In each of the above configurations, the light emitting device may have a white light emission. The light emitted from the light emitting element may be extracted through the second substrate.

[0018] Another embodiment of the present invention is an electronic device using a light-emitting device having any of the above structures.

[0019] In this specification and the like, the light emitting device includes an image display device, a light emitting device, a light source, The light emitting device includes a panel on which a light emitting element is formed and a connector (e.g. , FPC (Flexible printed circuit) etc. This also includes rules.

[0020] In this specification and the like, the term "light-emitting element" refers to a structure including a light-emitting layer sandwiched between a pair of electrodes. In addition to the light-emitting layer, a functional layer or the like may be sandwiched between the pair of electrodes.

[0021] In addition, the terms "electrode" and "wiring" used in this specification and the like do not limit the functionality of these components. For example, an "electrode" may be used as part of a "wiring." In addition, the term "electrode" or "wiring" may be used to refer to the plural "electrodes" or "wirings". This also includes cases where the "line" is formed as an integral part.

[0022] In addition, the functions of the "source" and "drain" may differ depending on whether transistors with different polarities are used. However, they may be swapped when the direction of the current changes during circuit operation. In this specification, the terms "source" and "drain" can be used interchangeably. It is possible. Effect of the Invention

[0023] In a light-emitting device provided with a light-emitting element including a light-emitting layer sandwiched between a pair of electrodes, A highly reliable light emitting device that prevents the light emitting element from being destroyed when physical force is applied to it. An apparatus can be provided. [Brief description of the drawings]

[0024] [Figure 1] 1A and 1B are a top view and a cross-sectional view illustrating a light-emitting device. [Diagram 2] 1A to 1C are cross-sectional views illustrating a method for manufacturing a light-emitting device. [Diagram 3] 1A to 1C are cross-sectional views illustrating a method for manufacturing a light-emitting device. [Figure 4] 1A to 1C are cross-sectional views illustrating a method for manufacturing a light-emitting device. [Diagram 5] 1A to 1C are cross-sectional views illustrating a method for manufacturing a light-emitting device. [Figure 6] 1A and 1B are cross-sectional views illustrating structures provided in a light-emitting device. [Figure 7] 1A and 1B are top views illustrating structures provided in a light-emitting device. [Figure 8] FIG. [Figure 9] 1A and 1B are a top view and a cross-sectional view illustrating a light-emitting device. [Figure 10] 1A and 1B are a top view and a perspective view illustrating a mobile phone using a light-emitting device. [Figure 11] 1A to 1C are diagrams illustrating electronic devices using light-emitting devices. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0025] Hereinafter, the embodiments of the present invention will be described in detail with reference to the drawings. The present invention is not limited to the description of the embodiments, and does not deviate from the spirit of the invention disclosed in this specification and the like. It will be apparent to those skilled in the art that various changes in form and detail may be made without departing from the spirit and scope of the present invention. The configurations according to the different embodiments can be appropriately combined and implemented. In the configuration of the invention described below, the same parts or parts having similar functions are denoted by the same reference numerals. In the following, reference numbers will be used and their repeated explanations will be omitted.

[0026] In addition, the position, size, range, etc. of each component shown in the drawings are not necessarily shown in order to facilitate understanding. The actual position, size, range, etc. may not be shown. The present invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings, etc.

[0027] In this specification, ordinal numbers such as "first," "second," and "third" are used to avoid confusion of components. It should be noted that the numbers are added to avoid confusion and are not intended to be limiting.

[0028] (Embodiment 1) In this embodiment, the structure of a light emitting device according to one embodiment of the present invention will be described with reference to FIG. 1(B) and then a method for manufacturing a light emitting device will be described with reference to FIGS. 2 to 5. cormorant.

[0029] <Configuration of the Light Emitting Device> FIG. 1A shows a part of a pixel of a light-emitting device, in which a first substrate 100 is connected to a second electrode layer 122. FIG. 1(B) is a cross-sectional view taken along the dashed line A1-A2 in FIG. 1(A). In addition, in the top view of FIG. 1(A), some of the components of the present invention (for example, a partition wall) are not shown. 124, etc.) have been omitted to avoid cluttering the drawing.

[0030] In the light emitting device shown in FIG. 1(A), a plurality of source wirings 156 are arranged in parallel to each other (extending in the vertical direction in the figure). The gate wirings 154 are arranged parallel to each other ( The source wiring 15 extends in the left-right direction in the drawing and is arranged at a distance from each other. A substantially rectangular area is surrounded by the gate wiring 154 and the light emitting device. Each pixel in the image sensor is arranged in a matrix.

[0031] In addition, each pixel includes a transistor 150 for controlling the driving of a light-emitting element and a A transistor 152 is formed to switch the light emitting element 151. In addition, a plurality of structures 126 are disposed between each pair of pixels.

[0032] The light-emitting device shown in FIG. 1B includes a transistor 150 and a light-emitting diode formed over the transistor 150. a light-emitting element 130, a partition wall 124 formed at a distance between each pixel, and a structure 126; A first substrate 100 on which the light-shielding film 164 and a color filter 166 are formed. The first substrate 160 is attached to the second substrate 160 by a first adhesive layer 170 .

[0033] The first substrate 100 and the second substrate 160 are flexible substrates. In the above, a substrate having flexibility is called a flexible substrate.

[0034] In the light emitting device shown in FIG. 1B, the light from the light emitting element 130 is reflected by the color filter 166. This is a so-called top emission structure (upper surface emission structure) in which the light is emitted from the second substrate 160 side through the It is a light-emitting device (construction type).

[0035] The first substrate 100 is provided with a second adhesive layer 102 on the first substrate 100 and a second adhesive layer 103 on the second substrate 100. A first buffer layer 104 is provided on the deposition layer 102, and a second buffer layer 105 is provided on the first buffer layer 104. A transistor 150 for controlling the driving of the light-emitting element provided thereon; The light emitting elements 130 connected to each other, the partitions 124 isolating the light emitting elements 130, and the partitions 124 and a structure 126 disposed thereon.

[0036] The transistor 150 includes a gate electrode layer 106 formed on the first buffer layer 104; A gate insulating layer 108 formed on the gate electrode layer 106 and a gate insulating layer 108 formed on the gate insulating layer 108 A semiconductor layer 110 is formed on the semiconductor layer 110. A source electrode layer 112a and a drain electrode layer 112b are formed on the semiconductor layer 110. The transistor 150 also has a first insulating layer 11 4 and a second insulating layer 116, on which a first electrode A first electrode layer 118, a light-emitting layer 120 formed on the first electrode layer 118, and a second electrode layer 120 formed on the light-emitting layer 120. and a second electrode layer 122 formed thereon.

[0037] Although not shown in FIG. 1B, the transistor 152 in FIG. The transistor has a similar configuration to that of the transistor 150. However, the size of the transistor (for example, L length, The width (width and width W) and the connections of the transistors can be adjusted appropriately for each transistor.

[0038] The first electrode layer 118, the light-emitting layer 120, and the second electrode layer 122 constitute a light-emitting element 13. The light emitting element 130 includes a first insulating layer 114 and a second insulating layer It is electrically connected to the transistor 150 through an opening provided in the .

[0039] The light emitting elements 130 are separated by the partitions 124 and the structures 126 to form pixels. However, the partition wall 124 and the structure 126 have different functions.

[0040] The partition wall 124 is formed by the first electrode layer 118, the first insulating layer 114, and the second insulating layer 116. The light emitting element 130 is provided to prevent breakage due to a step such as an opening provided in the light emitting element 116. Therefore, the partition wall 124 is tapered forward so that the film formed on the upper surface of the partition wall 124 is not interrupted. It is preferable that the shape is a forward tapered shape. This refers to a structure in which the thickness increases at a gentle angle.

[0041] On the other hand, the structure 126 is provided to separate the light-emitting layer 120. In this embodiment, the second electrode layer 122 is also separated in addition to the separation of the light emitting layer 120. However, the second electrode layer 122 does not have to be separated. However, the structure 126 may be The light-emitting layer 120 is separated from the second electrode layer 122 or the first adhesive layer 170 at least in part. The shape is such that the two parts are in contact.

[0042] In this manner, the structure 126 is connected to the second electrode layer 122 or the first electrode layer 123 without the light-emitting layer 120. The light-emitting layer 120 formed by the structure 126 is provided in an area in contact with the adhesive layer 170. The area in contact with the second electrode layer 122 or the first adhesive layer 170 without an intervening layer has adhesiveness. It is possible to make the light-emitting element 130 stronger, and by providing it between each pixel, Therefore, when a physical force is applied from the outside, the structure 126 is The region having strong adhesion can prevent the light emitting element 130 from being damaged. It becomes.

[0043] Here, a method for manufacturing the light-emitting device shown in FIG. 1B will be described in detail with reference to FIGS. Provide an explanation.

[0044] <Method of Manufacturing Light-Emitting Device> First, a first release layer 101 is formed on a third substrate 180, and a first The first buffer layer 104 is formed by exposing the first release layer 101 to the atmosphere. It is preferable to form the first and second electrodes continuously without exposing them to heat. Therefore, it is possible to prevent dust and impurities from being mixed between the separation layer 101 and the first buffer layer 104. (See Figure 2(A)).

[0045] The third substrate 180 may be a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, A metal substrate or the like can be used. In addition, a substrate having heat resistance capable of withstanding the processing temperature of this embodiment is also suitable. In the case of using a plastic substrate, a peeling layer 1 may be provided. There is no need to set 01.

[0046] In addition, for glass substrates, if the temperature of the subsequent heat treatment is high, the distortion point is 730°C or higher. For the glass substrate, for example, aluminosilicate glass, alumina Glass materials such as lumino borosilicate glass and barium borosilicate glass are used. In addition, by adding more barium oxide (BaO), a more practical heat-resistant glass can be obtained. Alternatively, crystallized glass or the like can be used.

[0047] In this embodiment, the first release layer 101 is formed in contact with the third substrate 180. However, when a glass substrate is used for the third substrate 180, the third substrate 180 and the first peeling Between the delamination layers 101, a silicon oxide film, a silicon oxynitride film, a silicon nitride film, a silicon nitride oxide film, By forming an insulating layer such as a coating, contamination from the glass substrate can be prevented, preferable.

[0048] The first release layer 101 is made of tungsten, molybdenum, titanium, tantalum, niobium, nickel, Ru, cobalt, zirconium, ruthenium, rhodium, palladium, osmium, iridium an element selected from aluminum and silicon, or an alloy material containing the element, or an alloy material containing the element It is made of a compound material and is a single layer or a laminated layer. The crystal structure of the silicon-containing layer is non- The crystal structure may be crystalline, microcrystalline, or polycrystalline.

[0049] The first release layer 101 can be formed by a method such as sputtering, plasma CVD, coating, printing, etc. The coating method can be a spin coating method, a droplet discharge method, a dispense method, etc. Includes.

[0050] When the first release layer 101 has a single-layer structure, it is preferably a tungsten layer, a molybdenum layer, or forms a layer containing a mixture of tungsten and molybdenum, or a layer of tungsten oxide. or a layer containing an oxide or oxynitride of molybdenum, or a layer containing an oxide or oxynitride of molybdenum. A layer containing an oxide or oxynitride of a mixture of tungsten and molybdenum is formed. The mixture of tungsten and molybdenum is, for example, an alloy of tungsten and molybdenum. Equivalent.

[0051] The first peeling layer 101 may be a layer containing tungsten and a layer containing an oxide of tungsten. When forming a laminated structure of layers, a layer containing tungsten is formed, and an oxide layer is formed on the layer containing tungsten. By forming an insulating layer that is made of tungsten, the oxide of tungsten is formed at the interface between the tungsten layer and the insulating layer. It is also possible to utilize the formation of a layer containing tungsten. The treatment is carried out using thermal oxidation, oxygen plasma treatment, or treatment with highly oxidizing solutions such as ozone water. In addition, the plasma treatment or the heat treatment may be performed by using oxygen, The experiment was carried out in an atmosphere of nitrogen, nitrous oxide alone, or a mixture of these gases with other gases. The surface state of the first peeling layer 101 can be changed by the plasma treatment or heat treatment. This controls the adhesion between the first release layer 101 and the first buffer layer 104 to be formed later. It is possible to control it.

[0052] Next, the first buffer layer 104 is formed on the first separation layer 101. 04 is a single layer or multilayer of silicon nitride, silicon oxynitride, and silicon nitride oxide. It is preferable to form

[0053] The first buffer layer 104 is formed by a method such as sputtering, plasma CVD, coating, or printing. For example, the film can be formed at a deposition temperature of 250 By forming the membrane at a temperature between 100°C and 400°C, it is possible to create a dense membrane with extremely low water permeability. The thickness of the first buffer layer 104 can be set to 10 nm or more and 3000 nm or less. The thickness is preferably 200 nm or more and 1500 nm or less.

[0054] Next, a conductive film is formed on the first buffer layer 104 and then subjected to a photolithography process and an etching process. A gate electrode layer 106 is formed by a etching process (see FIG. 2A).

[0055] The material of the gate electrode layer 106 is molybdenum, titanium, chromium, tantalum, tungsten, Metallic materials such as aluminum, copper, neodymium, and scandium, or alloy materials containing these elements The insulating film can be formed in a single layer or a laminated layer using a material.

[0056] Next, a gate insulating layer 108 is formed on the gate electrode layer 106. The gate insulating layer 108 is Using plasma CVD or sputtering, silicon oxide, silicon nitride, and oxide Silicon nitride, silicon nitride oxide, or aluminum oxide is formed in a single layer or a laminated layer. For example, SiH 4 , N 2 Plasma CVD using O A silicon oxynitride film may be formed by using a silicon oxynitride film.

[0057] Next, a semiconductor layer is formed and then a photolithography process and an etching process are performed to form an island. A semiconductor layer 110 having a rectangular shape is formed (see FIG. 2(A)).

[0058] The semiconductor layer 110 can be formed using a material such as a silicon semiconductor or an oxide semiconductor. Silicon semiconductors include single crystal silicon and polycrystalline silicon, while oxide semiconductors As the material, In-Ga-Zn-O-based metal oxides and the like can be appropriately used. The semiconductor layer 110 is made of an oxide semiconductor that is an In-Ga-Zn-O based metal oxide. By using a semiconductor layer with a low off-state current, leakage current during the off-state of a light-emitting element to be formed later can be reduced. This is preferable because the current can be suppressed.

[0059] Next, a conductive film is formed on the gate insulating layer 108 and the semiconductor layer 110, and then photolithography is performed. By performing a deposition process and an etching process, the source electrode layer 112a and the drain electrode layer 1 12b is formed (see FIG. 2(B)).

[0060] The conductive film used for the source electrode layer 112a and the drain electrode layer 112b is, for example, A metal film containing an element selected from the group consisting of I, Cr, Cu, Ta, Ti, Mo, and W, or the above-mentioned Metal nitride films containing elements (titanium nitride film, molybdenum nitride film, tungsten nitride film) It can also be used on either or both of the upper and lower sides of a metal film such as Al or Cu. High melting point metal films such as Ti, Mo, and W, or metal nitride films of these metals (titanium nitride film, molybdenum nitride film, etc.) The source electrode layer may be a laminate of a tungsten nitride film, a tungsten nitride film, or the like. The conductive film used for the drain electrode layer 112a and the drain electrode layer 112b is made of a conductive metal oxide. The conductive metal oxide may be indium oxide (In 2 O 3 etc.), tin oxide (SnO 2 etc.), zinc oxide (ZnO), ITO, indium oxide zinc oxide alloy (In 2 O 3 -ZnO, etc.) or these metal oxide materials containing silicon oxide are used. It is possible.

[0061] Next, a first An insulating layer 114 is formed (see FIG. 2B). The first insulating layer 114 is made of silicon oxide. An inorganic insulating film such as a silicon oxide film, a silicon oxynitride film, or an aluminum oxide film can be used. .

[0062] Next, a second insulating layer 116 is formed over the first insulating layer 114 (see FIG. 2C).

[0063] The second insulating layer 116 has a planarizing function to reduce surface irregularities caused by the transistor. For example, polyimide, acrylic, benzocyclohexane, etc. In addition to the above organic materials, low dielectric constant materials such as robutene can be used. In addition, insulating films made of these materials can be used. The second insulating layer 116 may be formed by stacking a plurality of layers.

[0064] Next, a photolithography process and an etching process are performed to form the first insulating layer 114. An opening is formed in the second insulating layer 116, the opening reaching the drain electrode layer 112b. The etching method may be appropriately selected from dry etching, wet etching, and the like.

[0065] Next, a conductive film is formed over the second insulating layer 116 and the drain electrode layer 112b. A first electrode layer 118 is formed by performing a lithography process and an etching process (FIG. 2(C)).

[0066] The first electrode layer 118 is made of a material that efficiently reflects light emitted by the light-emitting layer 120 (to be formed later). A material that reflects light is preferable because it can improve the light extraction efficiency. The electrode layer 118 may have a laminated structure. For example, a metal oxide A thin conductive film made of titanium or other material is formed on one side, and a highly reflective metal film (aluminum) is formed on the other side. , an alloy containing aluminum, or silver, etc. By this, the light-emitting layer 120 and the metal film (aluminum, alloy containing aluminum) having high reflectivity are This is advantageous because it can suppress the formation of an insulating film between the metal (silver, silver, etc.) and the metal. do.

[0067] In this embodiment, a light emitting device having a top emission structure is illustrated. , bottom emission structure (bottom emission structure), and dual emission structure (double-sided injection In the case of a light-emitting device having the above-mentioned structure, a light-transmitting material is used for the first electrode layer 118. It can be produced by the above steps.

[0068] Next, a partition wall 124 is formed over the first electrode layer 118 (see FIG. 2C).

[0069] The partition wall 124 is formed using an organic insulating material or an inorganic insulating material. The side wall of the partition wall 124 is made of a resin material so as to have an inclined surface having a continuous curvature. It is preferable to form the

[0070] Next, a structure 126 is formed on the partition wall 124 (see FIG. 2C).

[0071] The structure 126 is required to separate the light-emitting layer 120 that will be formed later. The shape is important. For example, the structure 126 shown in this embodiment has an inverted tapered shape. The inverse tapered shape here refers to a side that protrudes in a direction parallel to the substrate from the bottom, or It has a shape with an upper part.

[0072] The materials that can be used for the structure 126 include inorganic insulating materials, organic insulating materials, and metal materials. For example, organic insulating materials having negative or positive photosensitivity can be used. Photosensitive resin materials, non-photosensitive resin materials, etc. can be used. , titanium, aluminum, etc. can be used.

[0073] Next, the light-emitting layer 120 is formed on the first electrode layer 118, the partition wall 124, and the structure 126. (See Figure 2(D)).

[0074] The light-emitting layer 120 can be formed by a deposition method (including a vacuum deposition method) or the like. 20 may be composed of a single layer or multiple layers may be laminated. However, it is preferable that the light emitted by the light-emitting layer 120 is white, and red, green, Light having a peak in the respective wavelength region of blue is preferred.

[0075] In this embodiment, the light emitted by the light-emitting layer 120 is reflected by the color filter 166. The light-emitting layer 120 may be formed in a structure for emitting light of each color (e.g., For example, the color filters 166 may be omitted by applying different colors (RGB). However, by applying different colors to the light-emitting layer 120, the number of steps may increase, and costs may also increase. In order to achieve this, the configuration of the white light emitting layer 120 and the color filter 166 shown in this embodiment is used. is preferred.

[0076] The light-emitting layers 120 are separated by structures 126. Since the structure 126 has an inverse tapered structure, a film is formed on the bottom of the structure 126 when the light-emitting layer 120 is formed. The upper part and part of the side of the structure 126 can be separated without being embedded. In the structure, the light emitting layer 120 is formed.

[0077] Next, the second electrode layer 122 is formed over the light-emitting layer 120 (see FIG. 2(D)).

[0078] In this embodiment, the second electrode layer 122 is formed on the structure 126 in the same manner as the light-emitting layer 120. The structure 126 and the upper and side portions of the light-emitting layer 120 are separated by the SiO 2 film. In a part of the structure, the second electrode layer 122 is formed.

[0079] The second electrode layer 122 can be formed using a light-transmitting metal oxide. As for the metal oxide of indium oxide (In 2 O 3 etc.), tin oxide (SnO 2 etc.), oxidation Zinc (ZnO), indium oxide tin oxide alloy (In 2 O 3 - SnO 2 , abbreviated as ITO ), indium oxide zinc oxide alloy (In 2 O 3 -ZnO, etc.) or their metal oxides For example, a material containing silicon oxide can be used.

[0080] Either the first electrode layer 118 or the second electrode layer 122 is a light-emitting layer 120. The electrode serving as an anode for the light-emitting layer 120 and the other electrode serving as a cathode for the light-emitting layer 120. For the electrode, a material with a large work function is preferable, and for the electrode that functions as a cathode, a material with a small work function is preferable. Such materials are preferred.

[0081] The first electrode layer 118, the light-emitting layer 120, and the second electrode layer 122 constitute a light-emitting element 13. 0 is formed.

[0082] Through the above steps, the transistor 150 for controlling the driving of the light-emitting element and the light-emitting element 130 are formed. A third substrate 180 having a first insulating layer 182 formed thereon is provided.

[0083] Next, the light-shielding film 164, the color filter 166, and the overcoat 168 are formed. The method for producing the substrate 190 in No. 4 will be described below.

[0084] First, the second release layer 161 is formed on the fourth substrate 190, and the second Then, a buffer layer 162 is formed (see FIG. 3(A)).

[0085] The second release layer 161 and the second buffer layer 162 are the same as the first release layer 101 described above. The second buffer layer 104 can be formed using the same material and method as the first buffer layer 104.

[0086] Next, a conductive film is formed on the second buffer layer 162, and a photolithography process and an etching process are performed. A coating process is performed to form a light-shielding film 164 (see FIG. 3(B)).

[0087] The light-shielding film 164 can prevent color mixing between pixels. Metal films with low reflectivity such as titanium and chrome, or films impregnated with black pigments or black dyes An organic resin film or the like can be used. However, the light-shielding film 164 does not necessarily have to be provided.

[0088] Next, a color filter 166 is formed on the second buffer layer 162 and the light-shielding film 164. (See Figure 3(C)).

[0089] The color filter 166 is a colored layer that transmits light in a specific wavelength range. For example, A red (R) color filter transmits light in the red wavelength range, and a green (G) color filter transmits light in the green wavelength range. A green (G) color filter transmits light in the blue wavelength range, and a blue (B) color filter transmits light in the blue wavelength range. Each color filter can be formed by a printing method using a known material. , inkjet method, etching method using photolithography technology, etc. Form in the desired position.

[0090] Although the method using three colors of RGB has been described here, the present invention is not limited to this method. It may be a configuration using four colors such as GBY (yellow) or a configuration using five or more colors.

[0091] Next, an overcoat 168 is formed on the light-shielding film 164 and the color filter 166. (See Figure 3(C)).

[0092] The overcoat 168 can be formed of an organic resin film such as acrylic or polyimide. The overcoat 168 can remove impurities contained in the color filter 166. The overcoat 168 can prevent the diffusion of the organic EL element toward the light-emitting layer 120. The insulating film may be a laminated structure of a resin film and an inorganic insulating film. The overcoat 168 may be omitted. You may do so.

[0093] Through the above steps, the second release layer 161, the second buffer layer 162, the light-shielding film 164, the color A fourth substrate 190 is formed on which a filter 166 and an overcoat 168 are provided. do.

[0094] Next, the third substrate 180 and the fourth substrate 190 are aligned, and the first adhesive layer 17 is 0 is used to paste the images together (see Figure 4(A)).

[0095] The first adhesive layer 170 is not particularly limited, and a light-transmitting adhesive having a large refractive index that can be bonded is used. In addition, the adhesive has a molecular structure smaller than the wavelength of light, and acts as a desiccant. Materials that function as a filter (such as zeolite) and fillers with a high refractive index (such as titanium oxide and zirconia) By mixing the light emitting element 130 with the fluorine-containing compound, the reliability of the light emitting element 130 is improved, or This is preferable because it improves the light extraction efficiency from the substrate.

[0096] In addition, a sealing film with low moisture permeability is formed between the first adhesive layer 170 and the second electrode layer 122. Examples of the sealing film having low moisture permeability include silicon oxide, silicon nitride, and silicon oxide. Aluminum or the like can be used.

[0097] Next, the first release layer 101 and the first buffer layer 104 formed on the third substrate 180 are The peeling (separation) is performed (see Fig. 4(B)). Various methods can be used for the peeling method. do.

[0098] For example, the first release layer 101 and the first buffer layer 104 are formed in the process of forming the transistor 150. Due to the heating during the process, a metal oxide film is formed at the interface between the first release layer 101 and the first buffer layer 104. A groove (not shown) is formed to reach the first release layer 101, and the groove is used as a starting point. As a result, the metal oxide film becomes weak, and the first release layer 101 and the first buffer layer 104 are Peeling occurs.

[0099] The first peeling layer 101 formed on the third substrate 180 and the fourth substrate 190 The size of the second peeling layer 161 in the planar direction may be different. The size of the layer 161 is smaller than that of the first peeling layer 101, so that the third substrate 1 After bonding the second substrate 80 and the fourth substrate 190 together, a groove is easily formed in the second release layer 161. Therefore, it is preferable.

[0100] The peeling method can be mechanical (pulling it off by hand or with a tool, or by applying pressure to the Alternatively, liquid may be dropped into the grooves, A liquid is allowed to penetrate into the interface between the first release layer 101 and the first buffer layer 104 to form the first release layer The first buffer layer 104 may be peeled off from the substrate 101. 3 ,BrF 3 , C lF 3 A fluoride gas such as fluorine gas is introduced, and the first peeling layer 101 is etched and removed with the fluoride gas. The first buffer layer 104 is peeled off from the third substrate 180 having an insulating surface by using a method of It's fine.

[0101] As another peeling method, when the first peeling layer 101 is formed of tungsten, The first peeling layer 101 is peeled off while being etched with a mixed solution of monium oxide water and hydrogen peroxide water. This can be done.

[0102] The first peeling layer 101 may be a film containing nitrogen, oxygen, hydrogen, or the like (for example, an amorphous film containing hydrogen). The third substrate 180 is a thin film made of a material selected from the group consisting of a silicon film, a hydrogen-containing alloy film, an oxygen-containing alloy film, and the like. When a light-transmitting substrate is used, the laser is transferred from the third substrate 180 to the first peeling layer 101. The nitrogen, oxygen, and hydrogen contained in the peeling layer are vaporized by irradiating the peeling layer with laser light, and the third substrate 18 is formed. A method of peeling between the first peeling layer 101 and the second peeling layer 102 can be used.

[0103] Next, the first buffer layer 104 and the first substrate 100 are bonded together using the second adhesive layer 102. Glue (see Figure 5(A)).

[0104] In this specification and the like, a release layer formed on a substrate and a buffer layer formed on the release layer The process of separating a layer from another substrate and bonding it to another substrate is called peeling and transposition.

[0105] The first substrate 100 is a flexible substrate that transmits visible light. For example, polyethylene terephthalate (PET), polyethylene naphthalate (P EN) and other polyester resins, polyacrylonitrile resins, polyimide resins, polymethyl Methacrylate resin, polycarbonate resin (PC), polyethersulfone resin (P ES), polyamide resin, cycloolefin resin, polystyrene resin, polyamide-imide Resin, polyvinyl chloride resin, etc. can be suitably used. The substrate is made of a film containing nitrogen and silicon, such as silicon nitride or silicon oxynitride, or aluminum nitride. It is also possible to form a protective film with low water permeability, such as a film containing nitrogen and aluminum. The first substrate 100 is a structure in which a fibrous body is impregnated with an organic resin (also called a prepreg). (c) may also be used.

[0106] Note that the light emitting device described in this embodiment has a top surface in which light is extracted from the surface on the second substrate 160 side. Since the light-emitting device is a light-emitting device of a light-emitting type, the first substrate 100 is made of a non-transparent flexible material. A metal substrate that is thin enough to cover the surface of the substrate may be used. The material constituting the metal substrate is not particularly limited, but aluminum, copper, nickel, etc. It is preferable to use an alloy of metals such as chrome, aluminum alloy, or stainless steel. can.

[0107] When the material of the first substrate 100 contains fibrous material, the fibrous material may be an organic compound or an inorganic compound. The compound high-strength fiber is used. Specifically, the tensile modulus or Young's modulus of the high-strength fiber is It refers to high-quality fibers, and typical examples are polyvinyl alcohol fibers and polyester fibers. Fibers, polyamide fibers, polyethylene fibers, aramid fibers, polyparaphenylene Examples of the glass fiber include benzobisoxazole fiber, glass fiber, and carbon fiber. Examples of the glass fibers include those using E glass, S glass, D glass, Q glass, etc. These are used in the form of woven or nonwoven fabric, and the fibers are impregnated with organic resin to harden the organic resin. The structure thus obtained may be used as the first substrate 100. The use of a structure made of organic resin improves reliability against damage caused by bending or localized pressure. This is a preferred configuration because it improves the

[0108] The second adhesive layer 102 may be a photo-curable adhesive such as an ultraviolet-curable adhesive, or a reaction-curable adhesive. Various types of adhesives can be used, such as adhesives, thermosetting adhesives, or anaerobic adhesives. The adhesives used are epoxy resin, acrylic resin, silicone resin, pheno A resin such as a polyethylene terephthalate resin can be used.

[0109] When a prepreg is used as the first substrate 100, the second adhesive layer 102 is used. Alternatively, the first substrate 100 and the first buffer layer 104 may be bonded together by pressure bonding without any adhesive.

[0110] Next, the second release layer 161 and the second buffer layer 162 formed on the fourth substrate 190 are Then, the second substrate 160 is bonded to the second substrate 160 using a third adhesive layer 163 (see FIG. 5(B)).

[0111] The peeling method includes the step of peeling the first peeling layer 101 and the first buffer layer 102 formed on the third substrate 180 described above. This can be done by the same method as the peeling between the second substrate 104. The first adhesive layer 160 and the third adhesive layer 163 are respectively connected to the first substrate 100 and the second adhesive layer 10 It can be formed using the same materials and methods as 2.

[0112] Through the above steps, a light emitting device formed on a flexible substrate can be manufactured.

[0113] In this embodiment, after the third substrate 180 is peeled off, the fourth substrate 190 is peeled off. However, the invention disclosed in this specification is not limited to this method. After separation, the third substrate 180 may be peeled off.

[0114] In this embodiment, the first substrate 100 and the second substrate 16 are separated by a peel-and-transpose method. 0 to transpose the transistor 150, the light emitting element 130, and the color filter 166, etc. However, the invention disclosed in this specification is not limited to this, and the first substrate 100 and the second substrate The transistors 150, the light emitting elements 130, and the color filters 166 are directly formed on the substrate 160. It may be possible to do so.

[0115] In this embodiment, an active matrix light emitting device is used as one of the light emitting devices. However, it is also possible to apply the present invention to a passive matrix type light emitting device.

[0116] As described above, the light-emitting device shown in this embodiment has the above-described structure. High reliability that prevents the light-emitting element from being destroyed when physical force is applied from the outside A light emitting device can be provided.

[0117] In addition, by providing the above-mentioned structure, the present invention can be used as a method for making the device flexible. Even when peeling and transposition as shown in the embodiment are used, the light emitting element is not destroyed. This makes it possible to peel off and transfer the light emitting element to a flexible substrate.

[0118] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0119] (Embodiment 2) The structure used in the light emitting device of the present invention is different from the structure 126 shown in the first embodiment. The structure will be described with reference to FIGS. 6(A) to 6(D).

[0120] Note that the same reference numerals are used for the same parts as those in the light emitting device shown in the first embodiment, and the description thereof will be repeated. is omitted.

[0121] The light-emitting device shown in FIG. 6A has a first structure 202 and a second structure 203 disposed on a partition wall 124. 4.

[0122] The method for forming the structure 206 is to first form a film made of an organic insulating material, and then to form an inorganic insulating film on the film. A film made of an inorganic insulating material is then formed. Then, patterning is performed in the desired area to form an inorganic insulating film. After processing the film made of the material, the film made of the inorganic insulating material is masked (so-called hard mask). ) to process a film made of an organic insulating material. The insulating layer can be formed by wet etching, dry etching, or the like. The portion formed of the film made of the organic insulating material becomes the first structure 202, and the portion formed of the film made of the inorganic insulating material becomes the first structure 202. The portion formed by the film made of the material becomes the second structure 204 .

[0123] Examples of materials that can be used for the first structure 202 include materials having negative or positive photosensitivity. A resin material having a photosensitive property, a non-photosensitive resin material, or the like can be used. When a non-light-transmitting material is used for the first structure 203, the second structure 204 is used as a light-shielding film. The structure may be formed by exposure to light or the like.

[0124] Examples of materials that can be used for the second structure 204 include silicon oxide and silicon nitride. or conductive metal materials such as titanium and aluminum. It is possible.

[0125] The structure 206 separates the light emitting layer 120 and the second electrode layer 122 due to its shape. Therefore, the structure 206 and the first adhesive layer 170, and the structure 206 and the second electrode layer In other words, the structure 206 is in contact with the light-emitting layer 120 without the light-emitting layer 120. In addition, a region in contact with the first adhesive layer 170 and the second electrode layer 122 is provided. By adopting such a configuration, it is possible to strengthen the adhesion, and the structures 206 are provided between the pixels. By covering the light emitting element 130, the light emitting element 130 is protected. When a force is applied to the light emitting element, the light emitting element is prevented from being adhered to the light emitting element by the region of the structure 206 having high adhesion. It is possible to prevent 130 from being destroyed.

[0126] Next, the light-emitting device shown in FIG. 6B has a structure 208 over the partition wall 124 .

[0127] The structure 208 has a different side shape from the structure 126 shown in the first embodiment. The side surface of 8 is shaped to be approximately perpendicular to the substrate.

[0128] The method of forming the structure 208 and the materials that can be used are to form a film made of an inorganic insulating material. The film is then processed to form a desired region. Examples of the film made of an inorganic material include silicon oxide and silicon nitride. By using inorganic insulating films such as titanium and aluminum, or conductive metal materials, This can be done.

[0129] The structure 208 separates the light-emitting layers 120 due to its shape. In this case, only the light-emitting layer 120 is separated, and the second electrode layer 122 is not separated. On the side of the structure 208, the second electrode layer 122 is continuous with the adjacent pixel. A structure in which the structure 208 and the second electrode layer 122 are in contact with each other at the side of the structure 208. With this configuration, a region where the light-emitting layer 120 is not interposed therebetween is provided. Therefore, it is possible to strengthen the adhesion, and by providing the structures 208 between each pixel, Therefore, the light emitting element 130 is protected from external physical force. When the light emitting element 130 is removed, the light emitting element 130 is destroyed by the region of the structure 208 that has high adhesion. It is possible to prevent the above from happening.

[0130] Next, the light-emitting device shown in FIG. 6C has a structure 210 over the partition wall 124. In the structure 210, as shown in FIG.

[0131] The structure 210 has a spherical shape (a circular shape in cross section), and and the second electrode layer 122, and the distance between the first substrate 100 and the second substrate 160. At the same time, it also functions as a spacer to adjust the cell gap. The structure 126 shown in the first embodiment, the structure 206 and the structure 208 shown in the present embodiment, and The structure 214 may also have a function as a spacer, similar to the structure 210. stomach.

[0132] The structure 210 separates the light emitting layer 120 and the second electrode layer 122 due to its shape. Therefore, the structure 210 and the first adhesive layer 170, and the structure 210 and the second electrode layer In other words, the structure 210 is in contact with the light-emitting layer 120 without the light-emitting layer 120. In this way, a region in contact with the first adhesive layer 170 or the second electrode layer 122 is provided. By adopting such a configuration, it is possible to strengthen the adhesion, and the structures 210 are provided between the pixels. By covering the light emitting element 130, the light emitting element 130 is protected. When a force is applied to the light emitting element, the light emitting element is prevented from being adhered to the light emitting element by the region of the structure 210 having high adhesion. It is possible to prevent 130 from being destroyed.

[0133] Next, the light-emitting device shown in FIG. 6D is different from the light-emitting device shown in the first embodiment in that a partition wall , and configurations in which the shapes of the structures are different will be exemplified.

[0134] The light-emitting device shown in FIG. 6D has a partition wall 2 formed on the second insulating layer 116 and the first electrode layer 118. 12, a structure 214 is provided on a partition wall 212.

[0135] The method of forming the partition wall 212 and the structure 214 and the materials that can be used include silicon oxide. followed by silicon nitride, titanium, or aluminum. The area is patterned and processed with silicon nitride, titanium, or aluminum. Processed silicon nitride, titanium, or aluminum is used as a hard mask. By processing the silicon oxide, the partition wall 212 and the structure 214 are formed. By simultaneously forming the partition wall 212 and the structure 214, one mask is eliminated, and the manufacturing process is simplified. This is preferable as it reduces manufacturing costs.

[0136] In addition, the structure 214 separates only the light-emitting layer 120 and does not separate the second electrode layer 122. That is, on the side of the structure 214, the second electrode layer 122 is not connected to the adjacent pixel. In addition, the structure 214 and the second electrode layer 122 are continuous on the side surface of the structure 214. With this structure, the light-emitting layer 12 is in contact with the structure 214. Since there is a region where the two contact each other without a gap between them, it is possible to strengthen the adhesion, and the structure By providing the insulating film 214 between each pixel, the light emitting element 130 is protected. Therefore, when a physical force is applied from the outside, the area with strong adhesion provided in the structure 214 By using this region, it is possible to prevent the light emitting element 130 from being destroyed.

[0137] The structure 126 shown in the first embodiment, the structure 206 shown in the present embodiment, and the structure 208, structure 210, and structure 214 are made of a conductive metal material. This allows it to function as an auxiliary electrode.

[0138] Specifically, a light-transmitting material that can be used for the second electrode layer 122 has a relatively high resistance. Therefore, when the area of ​​the light emitting element 130 is increased, the resistance of the second electrode layer 122 increases. When the resistance is high, the voltage drop due to the resistance is large, and a brightness gradient occurs between pixels. Therefore, by using the structure as an auxiliary electrode, the brightness gradient between pixels can be reduced. However, when it is used as an auxiliary electrode, the arrangement of the structure is important. The arrangement will be described in detail in the third embodiment below.

[0139] In addition, the structure 126 shown in the first embodiment and the structure 206 shown in this embodiment The structure 208, the structure 210, and the structure 214 are configured so that the material used contains a desiccant. Materials that can be used as desiccants include, for example, aluminum oxide, zeolite, etc. By using such a material, the light emitting element 130 can be The structure absorbs moisture and the like that may enter the light emitting element 130, improving the reliability of the light emitting element 130. .

[0140] As described above, the light-emitting device shown in this embodiment has the above-described structure. High reliability that prevents the light-emitting element from being destroyed when physical force is applied from the outside A light emitting device can be provided.

[0141] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0142] (Embodiment 3) In this embodiment, the structure 126 shown in the first embodiment or the structure shown in the second embodiment is Light emitting device using the structure 206, the structure 208, the structure 210, and the structure 214 shown in FIG. The arrangement of the pixels will be described with reference to FIG.

[0143] The light-emitting device shown in FIG. 7(A) to FIG. 7(D) is a top view of a part of a pixel. In this embodiment, the position of the structure relative to each pixel is described. Some of the components (for example, the transistor 150 and the light-emitting element 130) are shown in FIG. It is omitted to avoid complexity.

[0144] In the light emitting device shown in FIG. 7, a plurality of source wirings 156 are arranged in parallel (extending in the vertical direction in the figure) The gate wirings 154 are arranged parallel to each other (left in the figure). The source wiring 156 and the source line 157 are arranged in a state of being spaced apart from each other. A substantially rectangular region is surrounded by the gate wiring 154, and this region is a part of the light emitting device. Each pixel is made up of one pixel, and multiple pixels are arranged in a matrix.

[0145] In the light-emitting device shown in FIG. 7A, a structure 240 is formed so as to overlap a plurality of source wirings 156. That is, the structures 240 are arranged in a so-called stripe shape for each pixel. There are.

[0146] In the light-emitting device shown in FIG. 7B, a plurality of source wirings 156 and a plurality of gate wirings 154 are A structure 242 is formed in the intersecting region. That is, the structure 242 is formed at the four corners of each pixel. Although the structure 242 has a rectangular shape in the top view, However, it is not limited to this. For example, various shapes such as polygon, circle, ellipse, L-shape, cross shape, etc. In particular, the L-shaped and cross-shaped structures can be used to connect multiple source wirings 156 and multiple gate wirings. When the structure is provided in the region where the wiring 154 intersects, the area of ​​the structure can be increased. The contact area with the layer in contact with the structure (the second electrode layer or the first adhesive layer) is enlarged, improving adhesion. This is preferable because it makes the

[0147] In the light-emitting device shown in FIG. 7C, a plurality of source wirings 156 and a plurality of gate wirings 154 are provided. The structures 244 are formed so as to overlap each other. That is, the structures 244 surround each pixel. It is set up to surround it.

[0148] In addition, when the structure 244 is formed of a non-transparent material, the structure 244 shown in FIG. With such a configuration, the structure 244 can separate light emitted from the light emitting element for each pixel. This is advantageous in that it is possible to prevent light leakage to adjacent pixels.

[0149] The light emitting device shown in FIG. 7(D) is a modification of the configuration shown in FIG. 7(A), and has a plurality of source wirings. The structure 246 is formed so as to substantially overlap the line 156. That is, the structure 246 is , and are arranged in a so-called stripe pattern.

[0150] The structure 246 is made of a conductive metal material, and the second electrode layer 122 is made of a conductive metal material. The cathode common wiring layer 248 is electrically connected to the cathode common wiring layer 248 formed separately via the structure 246. As shown above, by using the structure 246 as an auxiliary electrode, the luminance gradient between each pixel is It can also be reduced.

[0151] As described above, the light-emitting device described in this embodiment mode can be used to reduce the external High reliability that prevents the light-emitting element from being destroyed when physical force is applied from the outside A light emitting device can be provided.

[0152] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0153] (Embodiment 4) In this embodiment, the first electrode layer 118, the light-emitting layer 120, and The details of the light emitting element 130 including the first electrode layer 122 are shown in FIG. 8(A) and FIG. The explanation will be given using B).

[0154] <Configuration of Light-Emitting Element> The light-emitting element 130 shown in FIG. 8A includes a pair of electrodes (a first electrode layer 118 and a second electrode layer 1 22) has a structure in which a light-emitting layer 120 including a light-emitting region is sandwiched between the light-emitting layer 120 and the light-emitting region. In the description of the embodiment, the first electrode layer 118 is used as an anode, and the second electrode layer 122 is used as the cathode.

[0155] The light-emitting layer 120 may be formed to include at least a light-emitting layer, and may include any other layer than the light-emitting layer. The functional layer other than the light-emitting layer may be a layered structure including a functional layer having a high hole injection property. materials with high hole transport properties, materials with high electron transport properties, materials with high electron injection properties, A layer containing a material having a high electron and hole transporting property can be used. In particular, functional layers such as a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer are appropriately combined. It can be used.

[0156] The light-emitting element 130 shown in FIG. 8A has a first electrode layer 118 and a second electrode layer 122 between them. The resulting potential difference causes a current to flow, and holes and electrons recombine in the light-emitting layer 120, emitting light. In other words, the light emitting layer 120 is configured to have a light emitting region.

[0157] In the present invention, light emitted from the light emitting element 130 is incident on the first electrode layer 118 or the second electrode The electric current is taken out from the first electrode layer 118 or the second electrode layer 122. Either one of the elements 122 is made of a material having translucency.

[0158] The light-emitting layer 120 is made up of a first electrode layer 118 and a second electrode layer 122 as shown in FIG. In the case where the layer structure has n layers (n is a natural number of 2 or more), The mth (m is a natural number, m is 1 or more and n-1 or less) emitting layer and the (m+1)th emitting layer are It is preferable to provide a charge generating layer 120a between each of the layers.

[0159] The charge generating layer 120a may be a composite material of an organic compound and a metal oxide, a metal oxide, an organic compound, Alkali metals, alkaline earth metals, or composite materials with these compounds, as well as Examples of composite materials of organic compounds and metal oxides include For example, organic compounds and metal oxides such as vanadium oxide, molybdenum oxide, and tungsten oxide. The organic compounds include aromatic amine compounds, carbazole derivatives, aromatic hydrocarbons, etc. We use various compounds such as oligomers, dendrimers, polymers, etc. As the organic compound, a hole-transporting organic compound having a high hole mobility can be used. 10 -6 cm 2 However, it is preferable to apply a value of 0.1V / Vs or more. Any other substance having a high transportability may be used. These materials used in 0a have excellent carrier injection and carrier transport properties, so they are highly luminescent. The element 130 can be driven at a low current and at a low voltage.

[0160] The charge generating layer 120a is made of a composite material of an organic compound and a metal oxide, and other materials. For example, a layer including a composite material of an organic compound and a metal oxide and a layer including an electron transport layer may be formed. A compound selected from among the electroconductive materials and a layer containing a compound having high electron transport properties are combined. Alternatively, a layer containing a composite material of an organic compound and a metal oxide and a transparent conductive film may be combined. may be formed in combination.

[0161] The light emitting device 130 having such a configuration may have problems such as energy transfer and quenching. It is difficult to achieve this, and the range of materials to choose from is expanding, making it possible to develop light-emitting devices that have both high luminous efficiency and a long life. It is also easy to obtain phosphorescence in one light-emitting layer and fluorescence in the other. It is.

[0162] The charge generating layer 120a is a layer that generates a charge when a voltage is applied between the first electrode layer 118 and the second electrode layer 122. When the charge generating layer 120a is exposed to the light emitting layer 120, the charge generating layer 120a is exposed to the light emitting layer 120. The second light-emitting layer 120 has a function of injecting electrons into the second light-emitting layer 120 .

[0163] The light-emitting element 130 shown in FIG. 8B can be obtained by changing the type of light-emitting material used in the light-emitting layer 120. In addition, it is possible to obtain various emission colors by using multiple luminescent materials with different emission colors. By using optical materials, it is possible to obtain broad spectrum emission or white light emission. .

[0164] When white light is to be emitted using the light-emitting element 130 shown in FIG. 8B, a combination of a plurality of light-emitting layers is used. In any case, the combination may be such that it emits white light including red, blue, and green light. For example, The first light-emitting layer contains a blue fluorescent material as a light-emitting material, and the second light-emitting layer contains green and red phosphorescent materials as light-emitting materials. In addition, the first light-emitting layer may have a structure including a first light-emitting layer that emits red light. a first light-emitting layer that emits green light, and a third light-emitting layer that emits blue light. Alternatively, the light emitting layer may have a structure that emits light of complementary colors. In a stacked element having two light-emitting layers, the first light-emitting layer When the color of the light emitted from the first light-emitting layer is complementary to the color of the light emitted from the second light-emitting layer, Examples of complementary colors include blue and yellow, or blue-green and red.

[0165] In the above-mentioned laminated element, a charge generating layer is disposed between the laminated light emitting layers. This makes it possible to realize a long-life element in the high-luminance region while keeping the current density low. In addition, the voltage drop due to the resistance of the electrode material can be reduced, allowing for uniform light emission over a large area. This becomes possible.

[0166] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0167] (Embodiment 5) In this embodiment, a display device (a display panel or a light-emitting panel) which is one form of a light-emitting device will be described. The appearance and cross section of the semiconductor laser diode (also referred to as a semiconductor laser diode) will be described with reference to FIG. 9. FIG. 9(A) shows a semiconductor laser diode on a first substrate. a light-emitting element driving transistor and a light-emitting element formed on the first substrate; FIG. 1 is a top view of a panel in which a light-shielding film, a color filter, and an overcoat are sealed; 9(B) corresponds to a cross-sectional view taken along dashed line B1-B2 in FIG. 9(A).

[0168] The light-emitting device shown in FIG. 9A includes a pixel portion 4502 provided over a first substrate 4501, a signal A signal line driver circuit 4503a, a scanning line driver circuit 4503b, and a scanning line driver circuit 4504a. A scan line driver circuit 4504b is provided. 3a, a signal line driver circuit 4503b, a scanning line driver circuit 4504a, and a scanning line driver circuit 45 A second substrate 4506 is provided on top of 04b.

[0169] The first substrate 4501 and the second substrate 4506 are formed using flexible substrates. In this embodiment, the peeling and transposition method shown in the first embodiment is used. And it is being formed.

[0170] In addition, the light-emitting device shown in FIG. 9B has a transistor 4509 and a transistor A transistor 4510 and a transistor 4511 are provided. A light-emitting element 4550 is provided over the transistor 4510 and the transistor 4511.

[0171] Light emitted from the light emitting element 4550 is emitted from the second substrate 4506 side. The light-emitting device has an emission structure. Therefore, the second substrate 4506 has a light-transmitting property. For example, a glass plate, a plastic plate, a polyester film or an acrylic Materials such as glass film are used.

[0172] On the second substrate 4506, a light-shielding film 4521, a color filter 4522, and an optical filter 4523 are provided. A bar coat 4523 is provided. A light-shielding film 4521, a color filter 4522, and The overcoat 4523 is formed on the second substrate 160 shown in the first embodiment. It can be formed by a method similar to that used for forming the first insulating film.

[0173] In addition, a pixel portion 4502, a signal line driver circuit 4503a, a signal line driver circuit 4503b, and a driving circuit The scanning line driver circuit 4504a and the scanning line driver circuit 4504b are connected to the first substrate 4501 via a first connection. The sealing layer 4505 and the second substrate 4506 seal the device. Protective films with little outgassing (lamination films, UV curing resin films) It is preferable to pack (enclose) the container in a material such as a film or a cover material, as this provides high airtightness.

[0174] In addition, a pixel portion 4502, a signal line driver circuit 4503a, A signal line driver circuit 4503b, a scanning line driver circuit 4504a, and a scanning line driver circuit 4504b In FIG. 9B, the transistor included in the pixel portion 4502 is A transistor 4510, a transistor 4511, and a transistor included in a signal line driver circuit 4503a The example shows the resistor 4509.

[0175] The transistors 4509 to 4511 are the transistors described in Embodiment 1. The pixel portion 4502 can be formed by the same method as that of the pixel portion 150. A light-emitting element 4550 is provided over the transistor 4510 and the transistor 4511 .

[0176] The light emitting element 4550 includes a first electrode layer 4513, a light emitting layer 4514, and a second electrode layer 4515. and is electrically connected to the transistor 4510 or the transistor 4511. The light-emitting element 4550 has the element configuration shown in the above embodiment 4. It is possible.

[0177] Furthermore, the light-emitting element 4550 is separated by a partition 4552 and a structure 4554 .

[0178] The partition wall 4552 is formed using an organic resin film, an inorganic insulating film, or an organic polysiloxane. In particular, a photosensitive material is used to form a partition wall 4552 on the first electrode layer 4513, and the side wall of the partition wall 4552 is It is preferable to form the inclined surface so as to have a continuous curvature.

[0179] In addition, the structure 4554 is provided to separate the light-emitting layer 4514 between each pixel. In this embodiment, the second electrode layer 4515 is also separated in addition to the separation of the light emitting layer 4514. However, the second electrode layer 4515 does not have to be separated. The body 4554 is at least partially connected to the second electrode layer 4515 or the first adhesive layer 4505. is a shape that is in contact with the

[0180] In this manner, the structure 4554 is connected to the second electrode layer 4515 without the light-emitting layer 4514. The region in contact with the first adhesive layer 4505 is provided. The region can have a strong adhesiveness, and by providing it between each pixel, the light-emitting element 4 Therefore, when physical force is applied from the outside, the structure The light emitting element 4550 may be destroyed by the region with strong adhesion provided on the body 4554. It is possible to suppress the above.

[0181] In addition, a signal line driver circuit 4503a, a signal line driver circuit 4503b, and a scanning line driver circuit 4504 Various signals and potentials applied to the scanning line driver circuit 4504b or the pixel portion 4502 are , powered by FPC4518.

[0182] In this embodiment, the FPC 4518 is mounted on the first board 4501. The first substrate 4501 and the second substrate 4506 are flexible. In addition, the method of peeling and transposing shown in the first embodiment is used. Since this is a flexible light-emitting device, the connection terminals of the FPC4518 are connected to the second board. It is difficult to expose the 4506 side. Therefore, it is necessary to expose the 4506 side to the area where the FPC4518 is connected. A conductive electrode 4556 is formed, and an FPC 4518 is connected from the first substrate 4501 side. However, the method for connecting the FPC4518 is not limited to this. Alternatively, a method of connecting from the second substrate 4506 side may be used.

[0183] The through electrode 4556 is connected to the terminal of the FPC 4518 via the anisotropic conductive film 4519. The electrodes are electrically connected to each other.

[0184] If necessary, a polarizing plate or a circular polarizing plate (including an elliptical polarizing plate) may be provided on the second substrate 4506. In addition, optical films such as retardation plates (λ / 4 plates, λ / 2 plates) may be provided as appropriate. For example, the plate or the circular polarizer may be provided with an anti-reflection film by diffusing reflected light using surface irregularities. It is possible to apply an anti-glare coating to reduce glare.

[0185] In addition, a signal line driver circuit 4503a, a signal line driver circuit 4503b, and a scanning line driver circuit 45 04a, the scanning line driver circuit 4504b is a single crystal semiconductor film or a polycrystalline semiconductor film formed on a separately prepared substrate. The signal line driver circuit may be implemented by using a driving circuit formed of a crystalline semiconductor film. Only or a part of the scanning line driver circuit may be separately formed and mounted. The present invention is not limited to the configuration shown in FIG.

[0186] As described above, the light-emitting device described in this embodiment mode can be used to reduce the external High reliability that prevents the light-emitting element from being destroyed when physical force is applied from the outside A light emitting device can be provided.

[0187] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0188] (Embodiment 6) In this embodiment, a mobile phone incorporating the light emitting device described in the fifth embodiment is described. This will be described with reference to FIG. 10(A) and FIG. 10(B).

[0189] FIG. 10(A) shows a top view of the mobile phone as seen from the front, and FIG. 10(B) shows a perspective view of the mobile phone. FIG.

[0190] The mobile phone shown in FIG. 10(A) and FIG. 10(B) includes a housing 400 and a The display unit 404 and the operation buttons 402 are mounted on the display unit 404 .

[0191] The display unit 404 incorporates the light-emitting device shown in the fifth embodiment. In this embodiment, a light-emitting device and a separately formed touch panel are combined to form the display unit 404. Therefore, the display unit 404 has an operation unit 406 on it.

[0192] In the mobile phone according to the present embodiment, as shown in FIG. 10B, the display unit 404 is The upper area of ​​the housing 400 is also used as a display unit 404. Therefore, the display unit 404 can be seen not only from the front of the mobile phone but also from above. can be done.

[0193] For example, the upper display shows whether there is an email, whether there is an incoming call, the date and time, phone numbers, names of people, etc. If possible, even if the mobile phone is in a breast pocket, it is best to be able to take it out. You can check the display area without having to worry about

[0194] In this way, the light emitting device of the present invention can be formed on a flexible substrate, and therefore can be used in a curved medium. In addition, the light-emitting device formed on the flexible substrate is thin and lightweight. Therefore, it is suitable for use in mobile phones and the like.

[0195] As described above, the light-emitting device described in this embodiment mode can be used to reduce the external High reliability that prevents the light-emitting element from being destroyed when physical force is applied from the outside A light emitting device can be provided.

[0196] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0197] (Embodiment 7) In this embodiment, an electronic device including the light-emitting device described in any of Embodiments 1 to 5 will be described. .

[0198] Examples of electronic devices having the light-emitting device described in any of the first to fifth embodiments include video cameras, Digital video cameras and other cameras, goggle-type displays, navigation systems, sound Sound reproduction devices (car audio, audio components, etc.), computers, game devices, mobile phones Information terminals (mobile computers, mobile phones, portable game consoles, e-books, etc.), recording Image reproducing device equipped with a medium (specifically, Digital Versatile Disc (Devices equipped with a display device that can play recording media such as DVDs and display the images) Specific examples of these electronic devices are shown in Figure 11.

[0199] FIG. 11A shows a television device, which includes a housing 9101, a support 9102, a display portion 9103, and a screen. The television device includes a speaker unit 9104, a video input terminal 9105, etc. The light-emitting device shown in any one of Embodiments 1 to 5 is used to manufacture the display device 3. By mounting the light emitting device of the present invention on the display portion 9103 of a television set, a highly reliable display portion can be obtained. It is possible to provide a television device using the above.

[0200] FIG. 11B shows a computer, which includes a main body 9201, a housing 9202, a display unit 9203, and a keyboard. keyboard 9204, external connection port 9205, pointing device 9206, etc. This computer has a light-emitting device shown in any of the embodiments 1 to 5 in the display portion 9203. The light emitting device of the present invention is used as the display unit 9203 of the computer. By incorporating the display device, a computer using a highly reliable display unit can be provided.

[0201] FIG. 11C shows a mobile phone, which includes a main body 9401, a housing 9402, a display portion 9403, and an audio input portion. an input unit 9404, an audio output unit 9405, an operation key 9406, an external connection port 9407, This mobile phone includes a display unit 9403 as described in the first to third embodiments. The light-emitting device of the present invention is fabricated on the surface of a mobile phone. By mounting the display unit 9403, a mobile phone using a highly reliable display unit can be provided. can.

[0202] FIG. 11D shows a digital video camera, which includes a main body 9501, a display portion 9502, and a housing 95 03, external connection port 9504, remote control receiver 9505, image receiver 9506, battery This digital camera includes a digital camera 9507, a voice input unit 9508, operation keys 9509, and an eyepiece unit 9510. The display portion 9502 of the digital video camera has the light-emitting device described in any of the embodiments 1 to 5. The light-emitting device of the present invention is used as the display unit of a digital video camera. By incorporating this technology into the 9502, we will be able to provide a digital video camera with a highly reliable display. It is possible.

[0203] As described above, the light emitting devices shown in the first to fifth embodiments have a very wide range of application. The device can be applied to all fields of electronic equipment.

[0204] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is. [Explanation of symbols]

[0205] 100 Substrates 101 Peeling layer 102 Adhesive layer 104 Buffer Layer 106 Gate electrode layer 108 Gate Insulation Layer 110 Semiconductor layer 112a Source electrode layer 112b Drain electrode layer 114 Insulating layer 116 Insulating Layer 118 Electrode layer 120 Light-emitting layer 120a Charge generating layer 122 Electrode layer 124 Bulkhead 126 Structure 130 Light emitting element 150 Transistors 152 Transistor 154 Gate wiring 156 Source wiring 160 Substrate 161 Peeling layer 162 Buffer Layer 163 Adhesive layer 164 Light-shielding film 166 Color Filter 168 Overcoat 170 Adhesive layer 180 Substrate 190 Substrate 202 Structure 204 Structure 206 Structure 208 Structure 210 Structure 212 Bulkhead 214 Structure 240 Structure 242 Structure 244 Structure 246 Structure 248 Cathode common wiring layer 400 cabinet 402 Operation button 404 Display section 406 Operation section 4501 Board 4502 Pixel section 4503a Signal line driver circuit 4503b Signal line driver circuit 4504a Scanning line driver circuit 4504b Scanning line driver circuit 4505 Adhesive layer 4506 Board 4509 Transistor 4510 Transistor 4511 Transistor 4513 Electrode layer 4514 Light-emitting layer 4515 Electrode layer 4518 FPC 4519 Anisotropic conductive film 4521 Light-shielding film 4522 Color Filter 4523 Overcoat 4550 Light emitting element 4552 Bulkhead 4554 Structure 4556 Through electrode 9101 Case 9102 Support stand 9103 Display section 9104 Speaker section 9105 Video input terminal 9201 Main unit 9202 Case 9203 Display section 9204 Keyboard 9205 External connection port 9206 Pointing Device 9401 Main unit 9402 Case 9403 Display section 9404 Audio input section 9405 Audio output unit 9406 Operation key 9407 External connection port 9408 Antenna 9501 Main unit 9502 Display section 9503 Case 9504 External connection port 9505 Remote control receiver 9506 Image receiving unit 9507 Battery 9508 Audio input section 9509 Operation key 9510 Eyepiece

Claims

1. a pixel portion having a first transistor and a light-emitting element in a pixel; and a signal line driver circuit; A display device comprising: an electrode electrically connected to the signal line driving circuit; and an FPC electrically connected to the electrode, an insulating layer having a region disposed on the first transistor and a region disposed on a second transistor of the signal line driver circuit; a partition wall having a region disposed on the insulating layer and a region covering a periphery of a first electrode layer of the light emitting element disposed on the insulating layer; a first layer having a region disposed on the second electrode layer of the light-emitting device and including oxygen and aluminum; an adhesive layer disposed to have an area in contact with the top surface of the first layer; a color layer having an area disposed on the adhesive layer; a substrate having a region disposed on the color layer; the first electrode layer of the light-emitting element is electrically connected to the source or drain of the first transistor; Display device.

2. a pixel portion having a first transistor and a light-emitting element in a pixel; and a signal line driver circuit; A display device comprising: an electrode electrically connected to the signal line driving circuit; and an FPC electrically connected to the electrode, an insulating layer having a region disposed on the first transistor and a region disposed on a second transistor of the signal line driver circuit; a partition wall having a region disposed on the insulating layer and a region covering a periphery of a first electrode layer of the light emitting element disposed on the insulating layer; a sealing film having a region disposed on the second electrode layer of the light-emitting element and containing oxygen and aluminum; an adhesive layer disposed so as to have an area in contact with the upper surface of the sealing film; a color layer having an area disposed on the adhesive layer; a substrate having a region disposed on the color layer; a first electrode layer of the light-emitting element is electrically connected to a source or a drain of the first transistor; The sealing film includes aluminum oxide. Display device.

3. In claim 1 or 2, The insulating layer has a flat region on an upper surface. Display device.

Images