Oxide film reaction surface control agent and method for depositing oxide film using the same

By using a compound with a predetermined structure as an oxide film reaction surface controller, the challenges of achieving uniform thin film deposition on complex semiconductor substrates are addressed, resulting in improved step coverage, thickness uniformity, and reduced impurities.

JP2025081734APending Publication Date: 2025-05-27SOULBRAIN CO LTD
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Patent Information

Application Number
JP2025032994
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2022-10-25
Filing Date
2025-03-03
Publication Date
2025-05-27

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Abstract

To provide an oxide film reaction surface control agent capable of vastly improving step coverage and the thickness uniformity of a thin film even when depositing the thin film on a substrate having a complicated structure by depositing a sedimentary layer having a uniform thickness due to a difference in the adsorption distribution figure of the oxide film reaction surface control agent on a substrate as a thin film shielding area to reduce the vapor deposition speed of the thin film and appropriately reduce a thin film growth rate.SOLUTION: An oxide film reaction surface control agent including one or more kinds of compounds selected from a cyclic compound including three or more element species having an unshared electron pair and a linear compound including three or more element species having an unshared electron pair controls the reaction surface of the oxide film formed of one or more kinds of precursor compounds selected from trivalent metal, tetravalent metal, pentavalent metal or hexavalent metal.SELECTED DRAWING: None
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