Method of setting forward / backward movement recipe of shielding body, and plating apparatus

Abstract

To provide a method by which uniformity of a plating film to be formed on a substrate is improved, and a plating apparatus.SOLUTION: A plating apparatus comprises a shielding body that can move between a shielding position, which intervenes between the plated surface of a substrate and an anode, and a retreat position, which retreats from between the plated surface of the substrate and the anode. In the plating apparatus, a method of setting a forward / backward movement recipe of the shielding body in a computer is proposed. The method comprises the steps of: acquiring a resist pattern of the substrate; calculating a plating growth coefficient for each prescribed angle range of the substrate based on the acquired resist pattern; and setting the forward / backward movement recipe of the shielding body based on the calculated plating growth coefficient.SELECTED DRAWING: Figure 5

Description

Technical Field

[0001] The present application relates to a method for setting a forward and backward movement recipe of a shield and an electroplating apparatus.

Background Art

[0002] As an example of an electroplating apparatus, a so-called dip-type electroplating apparatus in which a substrate and an anode are arranged vertically is known (see, for example, Patent Document 1). Further, as another example of an electroplating apparatus, a cup-type electrolytic electroplating apparatus is known (see, for example, Patent Document 2). In the cup-type electrolytic electroplating apparatus, a substrate (for example, a semiconductor wafer) held by a substrate holder with the plating surface facing downward is immersed in a plating solution, and a voltage is applied between the substrate and the anode to deposit a conductive film (plating film) on the surface of the substrate.

[0003] In an electroplating apparatus, generally, based on the target plating film thickness and the actual plating area of the substrate to be plated, a user pre-sets parameters such as a plating current value and a plating time as a plating process recipe, and the plating process is performed based on the set process recipe. Further, during the plating process, parameters related to the plating film thickness are detected by a sensor to measure the film thickness of the plating film, and the plating conditions are also adjusted. In Patent Document 2, it is proposed to provide a shield that can move forward and backward between the plating surface of the substrate and the anode in order to adjust the plating conditions.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0005] By operating the shielding body between the plating surface of the substrate and the anode in a shielding position and retracting it from between the plating surface and the anode to a retracted position, the growth rate of the plating film on a specific portion can be adjusted. Although it is conceivable to operate such a shielding body based on a detection value detected during the plating process, by determining the operation in advance as part of the plating process recipe, the control efficiency can be improved and the uniformity of the plating film can be improved.

[0006] In view of the above circumstances, one object of the present application is to propose a plating apparatus capable of improving the uniformity of a plating film formed on a substrate.

Means for Solving the Problems

[0007] According to one embodiment, a method for setting, in a computer, the advancing / retreating operation recipe of a shielding body in a plating apparatus including a shielding body movable between a shielding position intervening between the plating surface of a substrate and an anode and a retracted position retracted from between the plating surface of the substrate and the anode is proposed. The method includes steps of: acquiring a resist pattern of the substrate; calculating a plating growth coefficient for each predetermined angular region of the substrate based on the acquired resist pattern; and setting the advancing / retreating operation recipe of the shielding body based on the calculated plating growth coefficient.

Brief Description of the Drawings

[0008]

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Mode for Carrying Out the Invention

[0009] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings described below, the same or corresponding components are denoted by the same reference numerals, and redundant descriptions are omitted.

[0010] <Overall Configuration of the Plating Apparatus> FIG. 1 is a perspective view showing the overall configuration of the plating apparatus of this embodiment. FIG. 2 is a plan view showing the overall configuration of the plating apparatus of this embodiment. The plating apparatus of this embodiment is used to perform plating treatment on a substrate. The substrate includes a rectangular substrate and a circular substrate. As shown in FIGS. 1 and 2, the plating apparatus 1000 includes a load port 100, a transfer robot 110, an aligner 120, a pre-wet module 200, a pre-soak module 300, a plating module 400, a cleaning module 500, a spin rinse dryer 600, a transfer device 700, and a control module (controller) 800.

[0011] The load port 100 is a module for loading a substrate, which is an object to be plated and stored in a cassette such as a FOUP (not shown in the plating apparatus 1000), into the plating apparatus 1000, or unloading the substrate from the plating apparatus 1000 to the cassette. In the present embodiment, four load ports 100 are arranged side by side in the horizontal direction, but the number and arrangement of the load ports 100 are arbitrary. The transfer robot 110 is a robot for transferring the substrate, and is configured to transfer the substrate between the load port 100, the aligner 120, the pre-wet module 200, and the spin rinse dryer 600. When transferring the substrate between the transfer robot 110 and the transfer device 700, the transfer robot 110 and the transfer device 700 can transfer the substrate via a temporary placement table (not shown). The aligner 120 is a module for aligning the positions such as the orientation flat and notch of the substrate in a predetermined direction. In the present embodiment, two aligners 120 are arranged side by side in the horizontal direction, but the number and arrangement of the aligners 120 are arbitrary.

[0012] The pre-wet module 200 wets the surface to be plated of the substrate before the plating process with a processing liquid such as pure water or degassed water, thereby replacing the air inside the pattern formed on the substrate surface with the processing liquid. The pre-wet module 200 is configured to perform a pre-wet process that makes it easier to supply the plating liquid inside the pattern by replacing the processing liquid inside the pattern with the plating liquid during plating. In the present embodiment, two pre-wet modules 200 are arranged one above the other in the vertical direction, but the number and arrangement of the pre-wet modules 200 are arbitrary.

[0013] The pre-soak module 300 is configured to perform a pre-soak process of etching and removing an oxide film with a large electrical resistance present on the surface of the seed layer formed on the surface to be plated of the substrate before the plating process, etc., with a processing liquid such as sulfuric acid or hydrochloric acid, to clean or activate the surface of the plating base. In the present embodiment, two pre-soak modules 300 are arranged one above the other in the vertical direction, but the number and arrangement of the pre-soak modules 300 are arbitrary.

[0014] The plating module 400 performs plating treatment on the substrate. In this embodiment, there are two sets of 12 plating modules 400 arranged in three rows in the vertical direction and four columns in the horizontal direction, and a total of 24 plating modules 400 are provided. However, the number and arrangement of the plating modules 400 are arbitrary.

[0015] The cleaning module 500 is configured to perform a cleaning process on the substrate to remove the plating solution and the like remaining on the substrate after the plating process. In this embodiment, two cleaning modules 500 are arranged side by side in the vertical direction. However, the number and arrangement of the cleaning modules 500 are arbitrary. The spin rinse dryer 600 is a module for drying the substrate by rotating it at high speed after the cleaning process. In this embodiment, two spin rinse dryers are arranged side by side in the vertical direction. However, the number and arrangement of the spin rinse dryers are arbitrary.

[0016] The transfer device 700 is a device for transferring the substrate between a plurality of modules in the plating apparatus 1000. The control module 800 is configured to control a plurality of modules of the plating apparatus 1000 and can be composed of, for example, a general computer or a dedicated computer having an input / output interface with an operator.

[0017] An example of a series of plating processes by the plating apparatus 1000 will be described. First, the substrate stored in the cassette is loaded into the load port 100. Subsequently, the transfer robot 110 takes out the substrate from the cassette of the load port 100 and transfers the substrate to the aligner 120. The aligner 120 aligns the positions of the orientation flat, notch, etc. of the substrate in a predetermined direction. The transfer robot 110 delivers the substrate whose direction has been aligned by the aligner 120 to the transfer device 700.

[0018] The transfer device 700 delivers the substrate received from the transfer robot 110 to the pre-wet module 200. The pre-wet module 200 performs a pre-wet process on the substrate. The transfer device 700 transfers the substrate subjected to the pre-wet process to the pre-soak module 300. The pre-soak module 300 performs a pre-soak process on the substrate. The transfer device 700 transfers the substrate subjected to the pre-soak process to the plating module 400. The plating module 400 performs a plating process on the substrate.

[0019] The transfer device 700 transfers the substrate subjected to the plating process to the cleaning module 500. The cleaning module 500 performs a cleaning process on the substrate. The transfer device 700 transfers the substrate subjected to the cleaning process to the spin rinse dryer 600. The spin rinse dryer 600 performs a drying process on the substrate. The transfer robot 110 receives the substrate from the spin rinse dryer 600 and transfers the substrate subjected to the drying process to the cassette in the load port 100. Finally, the cassette containing the substrate is unloaded from the load port 100.

[0020] <Configuration of the plating module> Next, the configuration of the plating module 400 will be described. Since the 24 plating modules 400 in this embodiment have the same configuration, only one plating module 400 will be described. FIG. 3 is a longitudinal sectional view schematically showing the configuration of the plating module 400 of this embodiment. As shown in FIG. 3, the plating module 400 includes a plating tank 410 for accommodating the plating solution. The plating tank 410 is configured as a cylindrical tank with an open upper surface and includes an outer tank (not shown) provided around it so that the plating solution overflowing from the upper edge can be stored.

[0021] The plating module 400 includes a substrate holder 440 for holding the substrate Wf with the surface to be plated Wf-a facing downward. The substrate holder 440 also includes a power supply contact for supplying power to the substrate Wf from a power source (not shown). The plating module 400 includes a lifting mechanism 442 for raising and lowering the substrate holder 440. In one embodiment, the plating module 400 includes a rotation mechanism 448 for rotating the substrate holder 440 about a vertical axis. The lifting mechanism 442 and the rotation mechanism 448 can be realized by known mechanisms such as motors, for example.

[0022] The plating module 400 includes a membrane 420 that divides the inside of the plating bath 410 in the vertical direction. The inside of the plating bath 410 is partitioned by the membrane 420 into a cathode region 422 and an anode region 424. The cathode region 422 and the anode region 424 are each filled with a plating solution. Although an example in which the membrane 420 is provided is shown in this embodiment, the membrane 420 may not be provided. An anode 430 is provided on the bottom surface of the plating bath 410 in the anode region 424.

[0023] A resistor 450 is disposed in the cathode region 422 opposite the membrane 420. The resistor 450 is a member for equalizing the plating process on the surface to be plated Wf-a of the substrate Wf. The resistor 450 is a resistor for the current flowing between the anode 430 and the substrate Wf, and is made of, for example, an electrically insulating material having a plurality of holes formed therein, such as PVC (polyvinyl chloride). Note that the plating module 400 may not have the resistor 450.

[0024] In this embodiment, a sensor 460 is provided in the cathode region 422. The sensor 460 is supported by, for example, the plating bath 410 or the resistor 450. Note that the sensor 460 may be fixedly supported immovably, or may be supported movably in the horizontal or vertical direction. In this embodiment, a plurality of sensors 460 are provided along the radial direction of the substrate Wf. The detection signal from the sensor 460 is input to the control module 800. In this embodiment, the sensor 460 and the control module 800 correspond to an example of a "film thickness measurement module" for measuring the film thickness of the plating film formed on the plated surface Wf-a of the substrate Wf. The sensor 460 detects parameters related to the plating film formed on the plated surface Wf-a of the substrate Wf. As an example, a distance sensor for measuring the distance between the sensor 460 and the substrate Wf (plating film), or a displacement sensor for measuring the displacement of the plated surface Wf-a of the substrate Wf can be employed. As the sensor 460, a sensor for estimating the formation rate (growth rate) of the plating film as a parameter related to the film thickness of the plating film may be employed. Specifically, as the sensor 460, for example, an optical sensor such as a white confocal type, a potential sensor, a magnetic field sensor, or an eddy current type sensor can be used.

[0025] When a potential sensor is used as the sensor 460, the sensor 460 may be provided between the substrate Wf and the anode 430. In other words, the sensor 460 may be provided at a position overlapping the substrate Wf and the anode 430 when viewed from a direction perpendicular to the plated surface Wf-a of the substrate Wf. Further, at least one reference potential sensor may be provided in the plating bath 410 (not shown). The reference potential sensor may be arranged outside the region between the substrate Wf and the anode 430. In other words, the reference potential sensor may be provided at a position not overlapping the substrate Wf and the anode 430 when viewed from a direction perpendicular to the plated surface Wf-a of the substrate Wf. Then, the control module 800 can measure the film thickness of the plating film formed on the plated surface Wf-a based on the potential difference between the sensor 460, which is a potential sensor, and the reference potential sensor.

[0026] Further, a shielding body 470 for shielding the current flowing from the anode 430 to the substrate Wf is provided in the cathode region 422. The shielding body 470 is a substantially plate-shaped member made of, for example, a dielectric material. FIG. 4 is a schematic view of the shielding body 470 and the substrate Wf of the present embodiment as viewed from below. In FIG. 4, illustration of the substrate holder 440 that holds the substrate Wf is omitted. The shielding body 470 is configured to be movable between a shielding position (a position indicated by a broken line in FIGS. 3 and 4) interposed between the plating surface Wf-a of the substrate Wf and the anode 430 and a retracted position (a position indicated by a solid line in FIGS. 3 and 4) retracted from between the plating surface Wf-a and the anode 430 by a drive mechanism 472 (see FIG. 3). In other words, the shielding body 470 is configured to be movable between a shielding position below the plating surface Wf-a and a retracted position away from below the plating surface Wf-a. The drive mechanism 472 may be configured to be able to adjust the shielding amount by the shielding body 470 by adjusting the shielding position between the plating surface Wf-a and the anode 430 by the shielding body 470. The drive mechanism 472 can be realized by a known mechanism such as a motor or a solenoid and is controlled by a control module 800. In the example shown in FIGS. 3 and 4, the shielding body 470 shields a part in the circumferential direction of the outer peripheral region of the plating surface Wf-a of the substrate Wf at the shielding position. Further, in the example shown in FIG. 4, the shielding body 470 is formed in a tapered shape that becomes thinner toward the center of the substrate Wf. However, it is not limited to such an example, and the shielding body 470 can be of any shape determined in advance by experiments or the like.

[0027] <Plating process> Next, the plating process in the plating module 400 of the present embodiment will be described in more detail. By immersing the substrate Wf in the plating solution in the cathode region 422 using the lifting mechanism 442, the substrate Wf is exposed to the plating solution. In this state, the plating module 400 can perform a plating process on the plating surface Wf-a of the substrate Wf by applying a voltage between the anode 430 and the substrate Wf. Further, in one embodiment, the plating process is performed while rotating the substrate holder 440 using the rotation mechanism 448. By the plating process, a conductive film (plating film) is deposited on the plating surface Wf-a of the substrate Wf. In the present embodiment, the plating film formed on the plating surface Wf-a during the plating process is detected in real time by the sensor 460. Then, the control module 800 measures the film thickness of the plating film based on the detection value by the sensor 460. Thereby, the change in the film thickness of the plating film formed on the plating surface Wf-a of the substrate Wf in the plating process can be measured in real time.

[0028] Further, in one embodiment, the plating module 400 includes a plurality of sensors 460 for measuring the film thickness of the plating film, and can measure the film thickness of the plating film at a plurality of locations on the plating surface Wf-a. Also, by performing detection by the sensor 460 along with the rotation of the substrate holder 440 (substrate Wf), the detection position by the sensor 460 can be changed, and the film thickness at a plurality of points or the entire circumferential direction on the circumferential direction of the substrate Wf can also be measured.

[0029] Note that the plating module 400 may change the rotation speed of the substrate Wf by the rotation mechanism 448 during the plating process. As an example, the plating module 400 may slowly rotate the substrate Wf for estimating the plating film thickness by the film thickness estimation module. As an example, the plating module 400 rotates the substrate Wf at the first rotation speed Rs1 during the plating process, and rotates the substrate Wf at the second rotation speed Rs2 slower than the first rotation speed Rs1 while the substrate Wf makes one or several rotations at regular intervals (for example, every few seconds). In this way, particularly when the sampling period by the potential sensor 460 is small with respect to the rotation speed of the substrate Wf, the plating film thickness of the substrate Wf can be accurately estimated. Here, the second rotation speed Rs2 may be, for example, one-tenth of the first rotation speed Rs1.

[0030] Thus, according to the plating apparatus 1000 of the present embodiment, the change in the film thickness of the plating film during the plating process can be measured. With reference to the change in the film thickness of the plating film thus measured, the plating conditions including at least one of the plating current value, the plating time, and the position of the shielding body 470 in the plating process can be adjusted. Note that the adjustment of the plating conditions may be performed by the user of the plating apparatus 1000 or may be performed by the control module 800. As an example, the adjustment of the plating conditions by the control module 800 may be performed based on a conditional expression or a program predetermined by experiments or the like. The adjustment of the plating conditions may be performed when plating another substrate Wf, or the plating conditions in the current plating process may be adjusted in real time. As an example of the adjustment of the plating conditions, the control module 800 can adjust the advancing and retracting position of the shielding body 470.

[0031] <Setting of the advancing and retracting operation recipe of the shielding body> In the plating apparatus 1000 of the present embodiment, the advancing and retreating operations of the shielding body 470 between the shielding position and the retracted position are set by a control module (controller) 800 as an advancing and retreating operation recipe. FIG. 5 is a flowchart for explaining an example of a method for setting the advancing and retreating operation recipe by the control module 800. The advancing and retreating operation recipe setting method shown in FIG. 5 is executed, for example, when processing a new substrate lot. Note that the advancing and retreating operation recipe may be set by a computer external to the plating apparatus 1000 and transmitted to the plating apparatus 1000 instead of being set by the control module 800 of the plating apparatus 1000. Hereinafter, a method for setting the advancing and retreating operation recipe by the control module 800 will be described. In this example, the control module 800 corresponds to an example of a "recipe setting module".

[0032] First, the control module 800 acquires the resist pattern of the substrate Wf to be processed (step S12). The resist pattern means the pattern of the resist layer formed on the surface to be plated Wf-a so that a desired plating pattern is formed by the plating process. The acquisition of the resist pattern may be performed by detecting the substrate Wf with a sensor provided in the plating apparatus 1000. As an example, the plating apparatus 1000 may be provided with an imaging sensor (not shown) such as a camera that images the surface to be plated Wf-a of the substrate Wf. Then, the control module 800 may acquire the imaging data detected by the imaging sensor and acquire the resist pattern of the surface to be plated Wf-a by analyzing the imaging data. The acquisition of the resist pattern from the imaging data can be performed using a known method based on the shadow or feature points of the imaging data. As another example, the plating apparatus 1000 may be provided with a white confocal sensor arranged to detect the surface to be plated Wf-a. Then, the control module 800 may acquire the resist pattern of the surface to be plated Wf-a by analyzing the data input from the white confocal sensor. Note that the detection by the white confocal sensor may be performed with the rotation of the substrate Wf. Further, as an example, the control module 800 may acquire the resist pattern by an external input via wired or wireless communication. In this case, information directly indicating the resist pattern may be input to the control module 800. Alternatively, information related to the resist pattern such as the above-described imaging data is input to the control module 800, and the control module 800 may acquire the resist pattern by analyzing the input information.

[0033] Subsequently, the control module 800 calculates the plating growth coefficient for each predetermined angular region of the plated surface Wf of the substrate Wf based on the acquired resist pattern (step S14). Here, the plating growth coefficient is a parameter indicating the growth rate (formation rate) of the plating film in a state where the effect of the shielding body 470 is not considered, that is, in a state where the shielding body 470 is located at the retracted position. Also, the predetermined angular region of the plated surface Wf means a region surrounded by two straight lines connecting the center (rotation center) and the outer edge of the plated surface Wf with a central angle of a predetermined angle, and the outer edge therebetween. That is, when the substrate Wf is circular, it means a sector region with a central angle of a predetermined angle. As the predetermined angle, an angle obtained by equally dividing 360° is preferable, and for example, it can be 0.5°, 1°, 2°, several degrees, 10°, etc. This predetermined angular region is preferably a region divided based on an orientation flat or a notch formed on the substrate Wf.

[0034] As an example, the plating growth coefficient can be the amount of plating film formed per unit time (for example, 1 second) (for example, nanometers). FIG. 6 is a graph showing an example of the plating growth coefficient. In FIG. 6, the vertical axis indicates the plating growth coefficient for each 1°, and the horizontal axis indicates the angular position from the reference angle. Note that in FIG. 6, it is shown that the plating growth coefficient is large in the region from θ1 to θ4, and particularly large in the region from θ2 to θ3. FIG. 7 is a diagram showing an example of the region of the plated surface used for calculating the plating growth coefficient. As an example, the plating growth coefficient can be calculated based on the resist pattern of the region Ap1 for which the plating growth coefficient is to be calculated. As another example, the plating growth coefficient may be calculated based on the resist pattern of the outer peripheral side region Ap2 in the predetermined angular region without considering a region close to the center (for example, a region with a radius of half or less). As yet another example, the plating growth coefficient may be calculated based on the resist pattern of a region Ap3a (a region including the region Ap3) wider than the region Ap3 for which the plating growth coefficient is to be calculated.

[0035] As a specific example, the control module 800 can calculate the aperture ratio (or aperture amount) of the resist layer for each predetermined angular region based on the resist pattern, and calculate the plating growth coefficient based on the calculated aperture ratio (or aperture amount). This is based on the fact that in a region where the aperture ratio of the resist layer is large, the area where plating accumulates and the plating amount for forming a certain amount of plating film are large, and the growth rate of the plating film tends to be smaller than in a region where the aperture ratio of the resist layer is small. However, the control module 800 may calculate the plating growth coefficient based on other factors such as the length of the edge of the resist layer in the predetermined angular region in addition to the aperture ratio of the resist layer.

[0036] Alternatively, the plating growth coefficient may be calculated using a learning model that has learned the correlation between the resist pattern and the plating growth coefficient by machine learning. FIG. 8 is a schematic functional block diagram of the control module 800 in one embodiment. The control module 800 includes a state variable acquisition unit 852 that acquires a state variable (resist pattern SV1), a storage unit 859 in which the learning model is stored, and a decision-making unit 858 that outputs (makes a decision) the plating growth coefficient for each predetermined angular region based on the acquired state variable (resist pattern SV1) and the learning model.

[0037] In this embodiment, the learning model stored in the storage unit 859 is constructed by a machine learning device. As an example, the plating device 1000 acquires, by wire or wirelessly, the learning model constructed by machine learning in the machine learning device and stores it in the storage unit 859. Further, the plating device 1000 may be equipped with a storage unit 859 that pre-stores the learning model constructed by the machine learning device. In this embodiment, although the machine learning device is shown as a configuration separate from the control module 800 of the plating device 1000, the control module 800 may perform at least some functions of the machine learning device. The machine learning device can be configured, for example, by a microcomputer that includes a CPU, a memory, etc. and realizes predetermined functions using software. FIG. 9 is a schematic functional block diagram of the machine learning device in this embodiment. The machine learning device includes a state variable acquisition unit 902 that acquires state variables (resist pattern SV1, plating growth coefficient SV2) as learning data, and a learning model generation unit 904 that learns and generates a learning model based on the acquired state variables.

[0038] The state variable acquisition unit 902 of the machine learning device acquires the resist pattern SV1 of the substrate Wf and the plating growth coefficient SV2 when the plating process is performed on the substrate Wf with the resist pattern SV1. The resist pattern SV1 can be acquired in the same manner as the acquisition of the resist pattern by the control module 800 described above, and may be acquired, for example, by acquiring and analyzing imaging data. The plating growth coefficient SV2 is a parameter related to the film thickness of the plating film when the plating process is performed on the substrate Wf with the resist pattern SV1 (plating film thickness information It may be acquired based on the report. The plating film thickness information may be a detection value by a sensor 460 provided in the plating apparatus 1000, or may be a plating film thickness measured by the control module 800 based on the detection value by the sensor 460. Further, the plating film thickness information may be a plating film thickness measured on the substrate Wf after the plating process is completed. Also, the plating film thickness information may be information measured when the plating process is performed without using the shielding body 470, or may be information measured when the plating process is performed with the advancing and retreating operation of the shielding body 470. However, when the plating process is performed with the advancing and retreating operation of the shielding body 470, it is preferable to acquire information SV3 indicating the advancing and retreating operation recipe or operation history of the shielding body 470 and calculate the plating growth coefficient in consideration of the advancing and retreating operation of the shielding body 470. Further, the plating growth coefficient SV2 may be calculated in consideration of other information such as the plating current value and the plating time in addition to the plating film thickness information.

[0039] The learning model generation unit 904 learns a learning model (correlation between the resist pattern SV1 and the plating growth coefficient SV2) according to an arbitrary learning algorithm collectively referred to as machine learning. The learning model generation unit 904 repeatedly executes learning based on the state variables (resist pattern SV1 and plating growth coefficient SV2) acquired by the state variable acquisition unit 902. The learning model generation unit 904 acquires a plurality of state variables, identifies the characteristics of the state variables, and interprets the correlation. Note that the learning model generation unit 904 may input the resist pattern SV1 and the plating film thickness information into the learning model and perform learning of the learning model of the correlation between the resist pattern SV1 and the plating growth coefficient.

[0040] Then, the decision-making unit 858 of the control module 800 determines the plating growth coefficient for each predetermined angle region based on the learning model constructed by machine learning and the resist pattern SV1 acquired by the state variable acquisition unit 852 of the control module 800.

[0041] Referring to FIG. 5, the control module 800 sets the advancing / retreating operation recipe of the shield 470 based on the calculated plating growth coefficient for each predetermined angular region (step S16). Here, the advancing / retreating operation recipe of the shield 470 is a recipe indicating the advancing / retreating position of the shield 470 for each angular position of the substrate Wf. For example, the control module 800 sets the advancing / retreating operation recipe of the shield 470 such that the shield 470 is in the shielding position in a region where the plating growth coefficient is large and the shield 470 is in the retracted position in a region where the plating growth coefficient is small. Note that the control module 800 may normalize the plating growth coefficient for each predetermined angular region and set the advancing / retreating operation recipe of the shield 470 based on the normalized plating growth coefficient. Here, "normalization" means, as an example, linear conversion such that the minimum value becomes 0 and the maximum value becomes 1.

[0042] FIG. 10 is a graph showing an example of the advancing / retreating position of the shield for each angular position of the substrate as the advancing / retreating operation recipe. Note that in FIG. 10, an example of the advancing / retreating operation recipe of the shield 470 with respect to the substrate Wf having the plating growth coefficient for each predetermined angular region shown in FIG. 6 is shown. In FIG. 10, the vertical axis represents the advancing / retreating position of the shield 470, and the horizontal axis represents the angular position from the reference angle. Also, in FIG. 10, the advancing / retreating position of the shield 470 is set such that the position where the amount of the shield 470 intervening between the substrate Wf and the anode 430 is the largest is 100%, and the position where the shield 470 has retreated from between the substrate Wf and the anode 430 is 0%. Further, in the example shown in FIG. 10, the shield 470 shows an example in which the amount of the shield 470 intervening between the substrate Wf and the anode 430 can be adjusted.

[0043] The advancing / retreating operation recipe of the shield 470 may be calculated using a learning model obtained by machine learning the correlation between the plating growth coefficient and the advancing / retreating operation recipe. Referring to FIG. 8, the decision-making unit 858 of the control module 800 may output the advancing / retreating operation recipe together with the plating growth coefficient. In this case, the correlation between the resist pattern SV1, the plating growth coefficient SV2, and the advancing / retreating operation recipe SV3 is machine-learned in the learning model. Here, the learning model generation unit 904 、Reinforcement learning may be executed to train a learning model. Reinforcement learning is a method that gives a reward to an action (output) executed for a current state (input) in a certain environment and generates a learning model that can obtain the maximum reward. As an example of performing reinforcement learning, the learning model generation unit 904 includes an evaluation value calculation unit 905 that calculates an evaluation value based on the state variable SV, and a learning unit 906 that trains the learning model based on the evaluation value. As an example, the evaluation value calculation unit 905 calculates an evaluation value based on the plating process when the shielding body 470 is driven based on the advancing and retreating operation recipe SV3 for the substrate Wf having the resist pattern SV1. Specifically, the smaller the time required for the plating process of the substrate Wf, the greater the reward may be given. Also, the evaluation value calculation unit 905 may give a greater reward as the plating growth coefficient SV2 is more constant. Furthermore, the evaluation value calculation unit 905 may give a greater reward as the uniformity of the plating film formed on the substrate Wf is higher.

[0044] When the advancing and retreating operation recipe of the shielding body 470 is set, the control module (controller) 800 controls the drive mechanism 472 based on the advancing and retreating operation recipe to advance and retreat the shielding body 470 during the plating process of the substrate Wf. Thereby, the uniformity of the plating film formed on the substrate Wf can be improved.

[0045] <Display of plating growth coefficient or advancing and retreating operation recipe of shielding body> The control module 800 may display on the display unit 802 (see FIG. 2) the plating growth coefficient information indicating the plating growth coefficient calculated based on the resist pattern, and / or the information indicating the advancing and retreating operation recipe of the shielding body 470. FIG. 11 is a diagram showing an example of the display on the display unit of the plating growth coefficient or the advancing and retreating operation recipe for each predetermined angular region. In the example shown in FIG. 11, a substrate graphic Gw simulating the substrate Wf is displayed. Also, information indicating the plating growth coefficient information or the advancing and retreating position of the shielding body 470 is shown corresponding to the angular position in the substrate graphic Gw.

[0046] To explain an example of the plating growth coefficient, in the example shown in FIG. 11, the plating growth coefficient shown in FIG. 6 is presented. For example, in the example shown in FIG. 6, the plating growth coefficient is small at angles from 0° to θ1, slightly larger at angles from θ1 to θ2, and particularly large at angles from θ2 to θ3. To indicate such plating growth coefficients, in the example shown in FIG. 11, each of the angles from 0° to θ1, from θ1 to θ2, and from θ2 to θ3 in the substrate graphic Gw is shown in a different color (hatching).

[0047] Similarly, to explain an example of the advancing / retreating position of the shielding body 470, in the example shown in FIG. 11, the advancing / retreating operation recipe shown in FIG. 10 is presented. For example, in the example shown in FIG. 10, the shielding body 470 is in the retracted position at angles from 0° to θ1, slightly intervenes between the substrate Wf and the anode 430 at angles from θ1 to θ2, and is in the position where it most intervenes between the substrate Wf and the anode 430 at angles from θ2 to θ3. To indicate such an advancing / retreating operation recipe, in the example shown in FIG. 11, each of the angles from 0° to θ1, from θ1 to θ2, and from θ2 to θ3 in the substrate graphic Gw is shown in a different color (hatching).

[0048] As an example, the control module 800 can predetermine the relationship between the plating growth coefficient (or the advancing / retreating position of the shielding body 470) and the color, and set the color to be displayed on the display unit 802 based on the relationship and the plating growth coefficient (or the advancing / retreating position of the shielding body 470). Further, the control module 800 can, instead of or in addition to the color, predetermine the relationship between the plating growth coefficient (or the advancing / retreating position of the shielding body 470) and a figure, pattern, or character, and set the display on the display unit 802 based on the relationship and the plating growth coefficient (or the advancing / retreating position of the shielding body 470). Note that the control module 800 may use the plating growth coefficient normalized for each predetermined angular region instead of the plating growth coefficient to perform the display on the display unit 802. Note that the control module 800 may display the graphs shown in FIGS. 6 and 10 on the display unit 802 instead of or in addition to the display shown in FIG. 11. Coefficient to perform the display on the display unit 802. Note that the control module 800 may display the graphs shown in FIGS. 6 and 10 on the display unit 802 instead of or in addition to the display shown in FIG. 11.

[0049] By displaying plating growth coefficient information or information indicating the forward and backward movement recipe of the shield 470 on the display unit 802 in this way, the user can intuitively understand the forward and backward movement recipe of the shield 470 through vision. Note that the control module 800 may accept a correction input by the user for the set forward and backward movement recipe. By moving the shield 470 forward and backward using the forward and backward movement recipe set in this way, the uniformity of the plating film formed on the substrate Wf can be improved.

[0050] The present invention can also be described in the following forms. [Form 1] According to Form 1, a method for setting, in a computer, the forward and backward movement recipe of a shield in a plating apparatus including a shield movable between a shielding position interposed between a plating surface of a substrate and an anode and a retracted position retracted from between the plating surface of the substrate and the anode is proposed. The method includes: obtaining a resist pattern of the substrate; calculating a plating growth coefficient for each predetermined angular region of the substrate based on the obtained resist pattern; and setting the forward and backward movement recipe of the shield based on the calculated plating growth coefficient. According to Form 1, by moving the shield forward and backward based on the forward and backward movement recipe of the shield, the uniformity of the plating film formed on the substrate can be improved.

[0051] [Form 2] According to Form 2, in Form 1, in the step of obtaining the resist pattern of the substrate, the resist pattern of the substrate is obtained by obtaining imaging data of the substrate and analyzing the imaging data. According to Form 2, based on the imaging data of the substrate, the forward and backward movement recipe of the shield can be set.

[0052] [Embodiment 3] According to Embodiment 3, in Embodiment 1 or 2, in the step of calculating the plating growth coefficient, the aperture ratio of the resist layer for each predetermined angular region of the substrate is calculated based on the resist pattern, and the plating growth coefficient is calculated based on the calculated aperture ratio. According to Embodiment 3, the plating growth coefficient can be calculated based on the aperture ratio of the resist layer.

[0053] [Embodiment 4] According to Embodiment 4, in Embodiments 1 to 3, it includes the step of displaying, on a display unit, information indicating the advancing and retreating positions of the shielding body for each angular position of the substrate as the advancing and retreating operation recipe. According to Embodiment 4, the advancing and retreating operation recipe of the shielding body can be intuitively understood through vision.

[0054] [Embodiment 5] According to Embodiment 5, in Embodiments 1 to 4, it includes the step of displaying, on a display unit, plating growth coefficient information indicating the plating growth coefficient calculated for each predetermined angular region of the substrate. According to Embodiment 5, the advancing and retreating operation recipe of the shielding body can be intuitively understood by looking at the display of the plating growth coefficient information.

[0055] [Embodiment 6] According to Embodiment 6, in Embodiments 1 to 5, the plating growth coefficient information is information obtained by normalizing the plating growth coefficient for each predetermined angular region. According to Embodiment 6, the plating growth coefficient can be more easily understood.

[0056] [Embodiment 7] According to Embodiment 7, in Embodiment 5, in the step of displaying the plating growth coefficient information on the display unit, a substrate graphic simulating the substrate is displayed, and the plating growth coefficient information is displayed for each predetermined angular region in the substrate graphic. According to Embodiment 7, the plating growth coefficient can be more easily understood.

[0057] [Aspect 8] According to Aspect 8, in Aspect 7, as the plating growth coefficient information, a predetermined figure, pattern, character, color, or a combination thereof for the plating growth coefficient for each predetermined angular region or the normalized plating growth coefficient for each predetermined angular region is displayed. According to Aspect 8, the plating growth coefficient can be more easily understood.

[0058] [Aspect 9] According to Aspect 9, in Aspects 1 to 8, a step of acquiring a parameter related to the film thickness of the plating film formed on the plated surface of the substrate during the plating process, and a step of inputting the acquired parameter and the resist pattern into a learning model to perform learning of the learning model are included. In the step of calculating the plating growth coefficient, the plating growth coefficient is calculated by inputting the acquired resist pattern into the learning model. According to Aspect 9, a retraction operation recipe of the shielding body can be set using machine learning.

[0059] [Aspect 10] According to Aspect 10, a plating apparatus is proposed. The plating apparatus includes a plating bath, a substrate holder for holding a substrate, an anode disposed in the plating bath so as to face the substrate held by the substrate holder, a shielding position interposed between the plated surface of the substrate and the anode, a shielding body movable to a retracted position retracted from between the plated surface of the substrate and the anode, a recipe setting module that calculates the plating growth coefficient for each predetermined angular region of the substrate based on the resist pattern of the substrate and sets a retraction operation recipe of the shielding body based on the calculated plating growth coefficient, and a controller that controls the shielding body based on the retraction operation recipe during the plating process. According to Aspect 10, the uniformity of the plating film formed on the substrate can be improved.

[0060] The embodiments of the present invention have been described above. However, the above-described embodiments of the invention are for facilitating the understanding of the present invention and do not limit the present invention. As an example, the above-described embodiments of the invention are also applicable to a so-called dip-type plating apparatus in which a substrate and an anode are arranged vertically. The present invention can be changed and improved without departing from its gist, and it goes without saying that equivalents of the present invention are included therein. Further, any combination of embodiments and modifications is possible within the range where at least a part of the above-described problems can be solved or at least a part of the effects can be exhibited, and any combination or omission of each component described in the claims and the specification is possible.

Explanation of Signs

[0061] 400…Plating module 410…Plating bath 430…Anode 440…Substrate holder 448…Rotation mechanism 460…Sensor 470…Shielding body 472…Drive mechanism 800…Control module 802…Display unit 852…State variable acquisition unit 858…Decision-making unit 859…Storage unit 902…State variable acquisition unit 904…Learning model generation unit 905…Evaluation value calculation unit 906…Learning unit 1000…Plating apparatus Wf…Substrate

Claims

1. A method for setting, in a computer, an advancing / retreating operation recipe of a shield in a plating apparatus including a shield movable between a shielding position interposed between a plating surface of a substrate and an anode and a retreating position retreated from between the plating surface of the substrate and the anode, comprising: obtaining a resist pattern of the substrate; calculating a plating growth coefficient for each predetermined angular region of the substrate based on the obtained resist pattern; setting the advancing / retreating operation recipe of the shield based on the calculated plating growth coefficient; The method includes the above steps.

2. The method according to claim 1, wherein, in the step of obtaining a resist pattern of the substrate, the resist pattern of the substrate is obtained by obtaining imaging data of the substrate and analyzing the imaging data.

3. The method according to claim 1, wherein, in the step of calculating the plating growth coefficient, an aperture ratio of a resist layer for each predetermined angular region of the substrate is calculated based on the resist pattern, and the plating growth coefficient is calculated based on the calculated aperture ratio.

4. The method according to claim 1, further comprising displaying, on a display unit, information indicating the advancing / retreating position of the shield for each angular position of the substrate as the advancing / retreating operation recipe.

5. The method according to claim 1, further comprising displaying, on a display unit, plating growth coefficient information indicating the plating growth coefficient for each predetermined angular region of the calculated substrate.

6. The method according to claim 5, wherein the plating growth coefficient information is information obtained by normalizing the plating growth coefficient for each predetermined angular region.

7. The method according to claim 5, wherein, in the step of displaying the plating growth coefficient information on the display unit, a substrate graphic simulating the substrate is displayed, and the plating growth coefficient information is displayed for each predetermined angular region in the substrate graphic.

8. The method according to claim 7, wherein, as the plating growth coefficient information, a predetermined figure, pattern, character, color, or a combination thereof is displayed for the plating growth coefficient for each predetermined angular region or the normalized plating growth coefficient for each predetermined angular region.

9. obtaining, during plating, a parameter related to a film thickness of a plating film formed on a plating surface of a substrate; inputting the obtained parameter and the resist pattern into a learning model to perform learning of the learning model; The method includes the above steps. In the step of calculating the plating growth coefficient, the plating growth coefficient is calculated by inputting the obtained resist pattern into the learning model. The method according to any one of claims 1 to 8.

10. A plating bath, A substrate holder for holding a substrate, An anode disposed in the plating bath so as to face the substrate held by the substrate holder, A shield that is movable between a shielding position intervening between the plating surface of the substrate and the anode and a retracted position retracted from between the plating surface of the substrate and the anode, A recipe setting module that calculates a plating growth coefficient for each predetermined angular region of the substrate based on the resist pattern of the substrate and sets an advancing / retreating operation recipe for the shield based on the calculated plating growth coefficient, A controller that controls the shield based on the advancing / retreating operation recipe during plating, A plating apparatus comprising the same.

Images