Constant-temperature crystal oscillator, method of manufacturing the same, and electronic apparatus

Abstract

To provide a constant-temperature crystal oscillator capable of coping with miniaturization, a method for manufacturing the same, and an electronic apparatus.SOLUTION: A constant-temperature crystal oscillator 30 includes a crystal resonator 31, a temperature-controlled oscillation chip 32 having an oscillation circuit and a temperature control circuit, an insulating layer 33, and an electrode structures 341. The crystal resonator includes a vibration element 311 and an airtight packaging structure 312 packaged on an outer periphery of the vibration element. The insulating layer is coated on outer peripheries of the temperature-controlled oscillation chip and the crystal resonator, and the insulating layer is internally provided with: via holes 331; and heating elements 35 electrically connected to the temperature-controlled oscillation chip. The heating elements include a first heating element 351 located between the crystal resonator and the temperature-controlled oscillation chip, and / or a second heating element 352 arranged in a ring shape on the outer peripheries of the crystal resonator and the temperature-controlled oscillation chip. The electrode structure is disposed on the insulating layer and electrically connected to the temperature-controlled oscillation chip through a conductive material in the via hole.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to the technical field of oven controlled crystal oscillators (OCXOs), and particularly to oven controlled crystal oscillators, a manufacturing method thereof, and electronic devices.

Background Art

[0002] In the use of electronic devices, it is usually necessary to use a highly stable clock such that a temperature sensing crystal (TSX) is combined with an external processing chip, a temperature compensated crystal oscillator (TCXO), or an oven controlled crystal oscillator (OCXO).

[0003] Among them, the oven controlled crystal oscillator is a traditional ultra-high-precision clock product. Its design principle is to use a heating design (including a temperature control circuit and a heater) through a crystal to maintain the crystal and the circuit in a certain high-temperature environment, and with a surrounding temperature isolation design to block the influence of the external environment on the constant temperature environment as much as possible. From such a design, it can be seen that the oven controlled crystal oscillator is a high-power consumption product and its size is relatively large (because constant temperature design and temperature isolation design are required).

Summary of the Invention

Problems to be Solved by the Invention

[0004] Therefore, it is necessary to provide an oven controlled crystal oscillator, a manufacturing method thereof, and an electronic device that can cope with miniaturization.

Means for Solving the Problems

[0005] In a first aspect, the oven controlled crystal oscillator according to an embodiment of the present application is a crystal oscillator including a vibration element and a hermetic sealing structure sealed around the vibration element, A temperature-controlled oscillation chip provided on one side of the crystal oscillator and having an oscillation circuit and a temperature control circuit; An insulating layer covering the outer periphery of the temperature-controlled oscillation chip and the crystal oscillator; An electrode structure provided on the insulating layer, and comprising: There are via holes and a heating element electrically connected to the temperature-controlled oscillation chip in the insulating layer; The heating element includes a first heating element and / or a second heating element. The first heating element is located between the crystal oscillator and the temperature-controlled oscillation chip. The second heating element is provided in a ring shape around the crystal oscillator and the temperature-controlled oscillation chip. There is a conductive material in the via holes; The electrode structure is electrically connected to the temperature-controlled oscillation chip through the conductive material in the via holes.

[0006] According to one aspect, the crystal oscillator is a crystal oscillator in a ceramic package. The hermetic sealing structure includes a ceramic substrate having a cavity and a cover plate covering the ceramic substrate. A conductor structure is provided in the ceramic substrate. The vibration element is provided in the cavity and connected to the ceramic substrate by an adhesive. The conductor structure of the ceramic substrate is also electrically connected to the temperature-controlled oscillation chip.

[0007] According to one aspect, the crystal oscillator is a crystal oscillator in a full-crystal package. The hermetic sealing structure includes a first sealing member provided on one side of the vibration element and a second sealing member provided on the other side of the vibration element. The first sealing member, the vibration element, and the second sealing member all include a crystal material.

[0008] According to one aspect, the insulating layer is formed by a plurality of semiconductor deposition processes, the via hole is formed in the insulating layer by a semiconductor etching process, and the conductive material, the first heating element and / or the second heating element, and the electrode structure in the via hole are formed by a plurality of semiconductor deposition and etching processes.

[0009] According to one aspect, the heating element has the first heating element and the second heating element, both ends of the first heating element are electrically connected to the second heating element or the temperature control oscillator chip, and both ends of the second heating element are respectively connected to the temperature control oscillator chip or the first heating element.

[0010] According to one aspect, the number of the second heating elements is plural, and the plural second heating elements are electrically connected and provided in a ring shape on the outer periphery of the crystal oscillator and the temperature control oscillator chip.

[0011] In a second aspect, a method for manufacturing a constant temperature crystal oscillator according to an embodiment of the present application includes the step of providing a temperature control oscillator chip having an oscillation circuit and a temperature control circuit, providing a crystal oscillator having a vibration element and a hermetic sealing structure sealed on the outer periphery of the vibration element, and providing the crystal oscillator on one side of the temperature control oscillator chip, forming an insulating layer having via holes and heating elements on the outer periphery of the temperature control oscillator chip and the crystal oscillator, providing a conductive material in the via holes, including the heating element as the first heating element and / or the second heating element, positioning the first heating element between the crystal oscillator and the temperature control oscillator chip, and installing the second heating element in a ring shape on the outer periphery of the crystal oscillator and the temperature control oscillator chip, forming an electrode structure on the insulating layer, and electrically connecting the electrode structure to the temperature control oscillator chip through the conductive material in the via hole.

[0012] According to one aspect, the insulating layer is formed by a plurality of semiconductor deposition processes, the via hole is formed in the insulating layer by a semiconductor etching process, and the conductive material, the first heating element and / or the second heating element, and the electrode structure in the via hole are formed by a plurality of semiconductor deposition and etching processes.

[0013] According to one aspect, the method for manufacturing the crystal oscillator further includes a step of providing a substrate. The insulating layer includes a first substrate portion, a second substrate portion, and a covering portion. The step of forming an insulating layer having the via hole and the heating element on the outer periphery of the temperature control oscillator chip and the crystal oscillator is as follows: A sub-step of forming the first substrate portion having the first portion of the second heating element on the substrate and disposing the crystal oscillator on the first substrate portion; A sub-step of forming a second substrate portion having the first heating element and the second portion of the second heating element on the first substrate portion; A sub-step of providing the crystal oscillator on the second substrate portion; A sub-step of forming a covering portion having the third portion of the second heating element and the via hole on the second substrate portion, and includes: Here, the first substrate portion, the second substrate portion, and the covering portion are all formed by a semiconductor deposition process. The method for manufacturing the crystal oscillator further includes a step of removing the substrate.

[0014] In a third aspect, an electronic device according to an embodiment of the present application includes a circuit board, and the circuit board is mounted with the crystal oscillator described in any of the above embodiments.

Advantages of the Invention

[0015] In the temperature-controlled crystal oscillator, its manufacturing method, and the electronic device provided by the embodiments of the present application, the sealing and protection of the crystal oscillator and the temperature control oscillation chip are realized through an insulating layer. The first heating element is located between the crystal oscillator and the temperature control oscillation chip to perform heating, and / or the second heating element ring is provided around the crystal oscillator and the temperature control oscillation chip to perform heating, so that the operations of the crystal oscillator and the temperature control oscillation chip can be effectively guaranteed in a constant temperature state, and the occupied space is small, which is also beneficial for reducing the size of the temperature-controlled crystal oscillator. In addition, since the insulating layer covers the temperature control oscillation chip, the temperature control oscillation chip is not exposed, and the temperature control oscillation chip can be better protected. Further, the electrode structure is provided on the insulating layer, and can cope with the stress generated on the client application side where the temperature-controlled crystal oscillator is placed on the circuit board, and has a buffering role, thereby enhancing the reliability of the temperature-controlled crystal oscillator and the circuit board of the electronic device having the same.

Brief Description of the Drawings

[0016] To more clearly explain the technical aspects in the embodiments of the present application or related technologies, the following briefly describes the drawings necessary in the embodiments or related descriptions. Obviously, the drawings in the following description are only the embodiments of the present application, and those of ordinary skill in the art can obtain other drawings based on the provided drawings without creative labor.

[0017]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Embodiments for Carrying Out the Invention

[0018] To facilitate the understanding of the present application, the present application will be described in more detail below with reference to the related drawings. The drawings show preferred embodiments of the present application. However, the present application is not limited to the embodiments described in this specification and can be implemented in many different forms. Conversely, the purpose of providing these embodiments is to more completely and thoroughly understand the disclosure content of the present application.

[0019] When one component is referred to as being "fixed" to another component, it may be directly present on the other component or may be fixed via other elements. Also, when one component is recognized as being "connected" to another component, it may be directly connected to the other component or an intermediate medium may exist simultaneously. The terms "inside", "outside", "left", "right" and similar expressions used in the text are used only for the purpose of explanation and do not indicate the only embodiment.

[0020] Unless otherwise defined, all technical terms and scientific terms used in this specification have the same meaning as commonly understood by those skilled in the technical field to which the present application belongs. The terms used in the specification of the present application are only for the purpose of explaining specific embodiments and are not intended to limit the present application. The term "and / or" used in this specification includes any and all combinations of one or more of the related listed items.

[0021] As shown in FIG. 1, in the constant temperature crystal oscillator 10 of the related art, the crystal oscillator 11 and the temperature control oscillator element 12 are respectively provided on both sides of a circuit board 16 having a heating element 15. The aforementioned temperature control oscillator element 12 includes an oscillation circuit element 121 and a temperature control circuit element 122. One end of the metal lead 17 is connected to the circuit board 16, and the other end of the metal lead 17 passes through the package base 181 and is electrically connected to other elements. The metal cover 182 is connected to the aforementioned package base 181, and the circuit board 16 having the aforementioned crystal oscillator 11, temperature control oscillator element 12, and heating element 15 is housed in a storage space surrounded by the metal cover 182 and the package base 181.

[0022] Taking FIG. 1 as an example, the inside of the storage space surrounded by the metal cover 182 and the package base 181 is nitrogen or vacuum, and a heat insulation design can be formed. By heating with the aforementioned heating element 15, the circuit elements related to the crystal oscillator 11 and the temperature control oscillator element 12 are in a certain high-temperature environment, so as to ensure the reliability of the aforementioned constant temperature crystal oscillator 10.

[0023] However, with the miniaturization of electronic devices, the requirements for the size and power consumption of the constant temperature crystal oscillator 10 also tend to increase. In another related art, a heating element 15 built into the ceramic base of the aforementioned crystal oscillator has also been proposed, which effectively forms a symmetrical thermal field between the vibration element (i.e., crystal) of the crystal oscillator 11 and the temperature control oscillator element 12, bringing relative constant temperature, and the size is also miniaturized. Then, with this heater as the core, a heat insulation device is added to the periphery to form a further miniaturized constant temperature crystal oscillator. However, how to further reduce the size of the aforementioned constant temperature crystal oscillator 10, protect the aforementioned temperature control oscillator element 12, and improve the reliability has become an important issue in the industry.

[0024] In view of this, the present application proposes a constant temperature crystal oscillator that reaches a miniaturized package, has a small size and high reliability, and its manufacturing method, a structure of a constant temperature crystal oscillator that can obtain an electronic device, its manufacturing method and applications.

[0025] Next, the temperature-controlled crystal oscillator (a type of temperature-controlled crystal oscillator) and its manufacturing method provided by the embodiments of the present application will be described in more detail with reference to FIGS. 2 to 7.

[0026] <Embodiment 1> Refer to FIGS. 2 to 4. FIG. 2 is a schematic cross-sectional structure diagram of the temperature-controlled crystal oscillator 30 provided by Embodiment 1 of the present application, FIG. 3 is a top view schematic diagram of the temperature-controlled crystal oscillator 30 provided by Embodiment 1 of the present application, and FIG. 4 is a bottom view schematic diagram of the temperature-controlled crystal oscillator 30 provided by Embodiment 1 of the present application. The aforementioned temperature-controlled crystal oscillator 30 includes a crystal oscillator 31, a temperature control oscillator chip 32, an insulating layer 33, an electrode structure 341, and a heating element 35. The aforementioned temperature control oscillator chip 32 may be an oscillator chip incorporating a temperature sensor.

[0027] The aforementioned crystal oscillator 31 includes a vibration element 311 and a hermetic seal structure 312 encapsulated on the outer periphery of the aforementioned vibration element 311. It is understood that the aforementioned crystal oscillator 31 is already a packaged crystal oscillator element. In this embodiment, mainly, the aforementioned crystal oscillator 31 will be described by taking a crystal oscillator with a ceramic package as an example.

[0028] The aforementioned temperature control oscillator chip 32 is provided on one side of the aforementioned hermetic seal structure 312 and can be electrically connected to the aforementioned hermetic seal structure 312.

[0029] The foregoing insulating layer 33 is coated on at least one side of the foregoing temperature control oscillation chip 32 and the foregoing hermetic sealing structure 312. The foregoing insulating layer 33 has a via hole 331. There is a conductive material in the foregoing via hole 331. The foregoing electrode structure 341 is provided on the insulating layer 33 and is electrically connected to the temperature control oscillation chip 32 through the conductive material in the foregoing via hole 331. The foregoing electrode structure 341 may be a pad structure such as a solder pad. The foregoing insulating layer 33 is a resin material. The foregoing electrode structure 341 includes a plurality of electrodes (i.e., a plurality of solder pads). In the present embodiment, the electrode structure 341 includes a first electrode and a second electrode. The foregoing via hole 331 is divided into a first via hole and a second via hole so as to correspond to the number of the foregoing first electrode and second electrode. Therefore, the foregoing first electrode is electrically connected to the temperature control oscillation chip through the conductive material in the corresponding first via hole, and the foregoing second electrode is electrically connected to the temperature control oscillation chip through the conductive material in the corresponding second via hole. As shown in FIG. 4, preferably, the number of the first electrodes of the foregoing electrode structure 341 is four, and they are respectively provided at the bottom of the foregoing constant temperature crystal oscillator 30.

[0030] The foregoing heating element 35 may include a first heating element 351 and / or a second heating element 352. The foregoing first heating element 351 is located between the foregoing crystal oscillator 31 and the foregoing temperature control oscillation chip 32. The foregoing second heating element 352 is provided in a ring shape on the outer periphery of the foregoing crystal oscillator 31 and the foregoing temperature control oscillation chip 32.

[0031] Specifically, both ends of the aforementioned first heating element 351 are connected to the aforementioned second heating element 352 or are electrically connected to the aforementioned temperature control oscillation chip 32. Both ends of the aforementioned second heating element 352 are respectively connected to the aforementioned temperature control oscillation chip 32 or the aforementioned first heating element 351. In this embodiment, an example in which the number of the second heating elements 352 is mainly one will be described. However, in other modified examples, the number of the aforementioned second heating elements 352 may be plural. The plurality of second heating elements 352 are electrically connected and are sequentially provided in a ring shape on the outer periphery of the crystal oscillator 31 and the temperature control oscillation chip 32. The plurality of second heating elements 352 can form a multi-layer heat insulation structure, enhance the heat insulation effect, and further improve the performance of the aforementioned constant temperature crystal oscillator 30.

[0032] The aforementioned insulating layer 33 is formed by a plurality of semiconductor deposition processes. The aforementioned via hole 331 is formed in the aforementioned insulating layer 33 by a semiconductor etching process. The aforementioned conductive material in the via hole 331, the aforementioned first heating element 351 and / or the second heating element 352, and the aforementioned electrode structure 341 may be the same conductive material and are formed by a plurality of semiconductor deposition and etching processes. Further, the semiconductor etching process can realize the patterning of the material layer to be etched by sequentially depositing the material to be etched and the photosensitive etchant and exposing them in combination with a patterned mask.

[0033] In the temperature-controlled crystal oscillator 30 provided by the embodiment of the present application, the aforementioned temperature control oscillation chip 32 is directly installed on one side of the hermetic sealing structure 312 of the already packaged crystal oscillator 31, and then, the aforementioned insulating layer 33 is used to realize the sealing protection between the crystal oscillator 31 and the temperature control oscillation chip 32. The aforementioned first heating element is located between the aforementioned crystal oscillator and the temperature control oscillation chip to perform heating, and / or the aforementioned second heating element is provided in a ring shape around the aforementioned crystal oscillator and the temperature control oscillation chip to perform heating. Thereby, it can effectively ensure that the crystal oscillator and the temperature control oscillation chip operate in a constant temperature state, and the occupied space is also small, which is advantageous for reducing the size of the aforementioned temperature-controlled crystal oscillator. Moreover, since the insulating layer 33 covers the temperature control oscillation chip 32, the temperature control oscillation chip 32 is not exposed, and the temperature control oscillation chip 32 can be better protected. In addition, the electrode structure 341 is provided on the insulating layer 33 and can cope with the stress generated on the client application side where the temperature-controlled crystal oscillator 30 is placed on the circuit board, and has a buffering role, thereby enhancing the reliability of the temperature-controlled crystal oscillator 30 and the circuit board having the same.

[0034] Specifically, the hermetic sealing structure 312 may include a ceramic substrate 3121 having a cavity 3121a and a cover plate 3122 covered on the ceramic substrate 3121. The vibration element 311 is provided in the cavity 3121a and can be electrically connected to the conductor structure in the ceramic substrate 3121 through a conductive adhesive 3121c (such as a conductive adhesive). The conductor structure in the aforementioned ceramic substrate 3121 is further electrically connected to the temperature control oscillation chip 32 so that the temperature control oscillation chip 32 is electrically connected to the crystal oscillator 31 to realize the driving of the crystal oscillator 31. The vibration element 311 is a crystal material, and specifically may be a quartz crystal.

[0035] <Embodiment 2> Refer to FIG. 5. FIG. 5 is a cross-sectional view of the temperature-controlled crystal oscillator 40 provided by Embodiment 2 of the present application. The temperature-controlled crystal oscillator 40 in Embodiment 2 is basically the same as the temperature-controlled crystal oscillator 30 in Embodiment 1, and the difference between the two is that the corresponding component reference numerals are different. That is, the description of the temperature-controlled crystal oscillator 30 in Embodiment 1 above can basically also be applied to the temperature-controlled crystal oscillator 40 in Embodiment 2. Hereinafter, the differences between the temperature-controlled crystal oscillator 40 in Embodiment 2 and the temperature-controlled crystal oscillator 30 in Embodiment 1 will be mainly described.

[0036] In the temperature-controlled crystal oscillator 40 of Embodiment 2, the aforementioned first sealing member 4124, the aforementioned second sealing member 4125, and the aforementioned vibrating element 411 are all crystal materials. That is, the crystal oscillator 41 is a crystal oscillator of an all-crystal package. The hermetic sealing structure 412 includes a first sealing member 4124 provided on one side of the vibrating element 411 and a second sealing member 4125 provided on the other side of the vibrating element 411.

[0037] Specifically, in the present embodiment, the aforementioned temperature control oscillation chip 42 is further electrically connected to the crystal oscillator 41 in order to realize the driving of the crystal oscillator 41.

[0038] <Embodiment 3> Refer to FIGS. 2 to 6. FIG. 6 is a flowchart of a manufacturing method of a temperature-controlled crystal oscillator provided by Embodiment 3 of the present application. The aforementioned manufacturing method includes the following steps S71 to S74. In step S71, a temperature control oscillation chip having an oscillation circuit and a temperature control circuit is provided. As shown in FIGS. 2 to 5, the aforementioned temperature control oscillation chip may be the temperature control oscillation chip 32 or 42 described in any one of Embodiments 1 and 2.

[0039] In step S72, a crystal oscillator is provided and the aforementioned crystal oscillator is installed on one side of the temperature-controlled oscillation chip. The aforementioned crystal oscillator includes a vibration element and a hermetic sealing structure encapsulated on the outer periphery of the aforementioned vibration element. Specifically, as shown in FIGS. 2 to 5, the aforementioned crystal oscillator is a crystal oscillator in a ceramic package or a crystal oscillator in an all-crystal package. That is, it may be the crystal oscillators 31 and 41 described in any one of Embodiments 1 and 2, and thus will not be further described herein.

[0040] In step S73, an insulating layer having via holes and heating elements is formed on the outer periphery of the aforementioned temperature-controlled oscillation chip and the aforementioned crystal oscillator. There is a conductive material in the aforementioned via holes. The aforementioned heating element includes a first heating element and / or a second heating element. The aforementioned first heating element is located between the aforementioned crystal oscillator and the aforementioned temperature-controlled oscillation chip. The aforementioned second heating element is provided in a ring shape around the aforementioned crystal oscillator and the aforementioned temperature-controlled oscillation chip. Note that the structures of the aforementioned insulating layers 33 and 43, via holes 331 and 431, and heating elements 35 and 45 have been described in detail in Embodiment 1 or 2, and thus the description thereof will be omitted herein.

[0041] In step S74, a first electrode and a second electrode are formed on the aforementioned insulating layer, and the first electrode is electrically connected to the temperature-controlled oscillation chip through the conductive material in the first via hole, and the second electrode is electrically connected to the temperature-controlled oscillation chip through the conductive material in the second via hole. Note that the aforementioned electrode structures 341 and 441 have already been described in detail in Embodiment 1 and Embodiment 2, and thus will not be further described herein.

[0042] Furthermore, as shown in FIG. 2, taking the constant-temperature crystal oscillator 30 of Embodiment 1 as an example, the manufacturing method of the aforementioned constant-temperature crystal oscillator 30 further includes a step of providing a substrate. The aforementioned insulating layer 33 includes a first substrate portion 33a, a second substrate portion 33b, and a covering portion 33c. The step of forming an insulating layer having via holes 331 and heating elements 35 on the outer periphery of the temperature-controlled oscillation chip 32 and the crystal oscillator 31 includes the following sub-steps.

[0043] Form a first substrate portion 33a having the first portion 352a of the second heating element 352 on the substrate, and dispose the crystal oscillator 31 on the first substrate portion 33a. Form a second substrate portion 33b having the first heating element 351 and the second portion 352b of the second heating element 352 on the first substrate portion 33a. Provide the crystal oscillator 31 on the second substrate portion 33b. Form a covering portion 33c having the third portion 352c of the second heating element 352 and the via hole 331 on the second substrate portion 33b. Here, the first substrate portion 33a, the second substrate portion 33b, and the covering portion 33c are all formed by a semiconductor deposition process.

[0044] The method for manufacturing the constant temperature crystal oscillator further includes a step of removing the substrate.

[0045] <Embodiment 4> Refer to FIG. 7. FIG. 7 is a schematic block diagram of an electronic device 80 provided according to Embodiment 4 of the present application. The embodiment of the present application further provides an electronic device 80. The electronic device 80 may be a portable electronic device such as a mobile phone, a tablet, a display, a notebook computer, a digital camera, etc., but is not limited to the above devices. Further, the electronic device 80 may include a circuit board 81 on which the constant temperature crystal oscillators 30, 40 described in any of the above embodiments are mounted.

[0046] Each of the technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above-described embodiments are described, but as long as there is no contradiction in the combination of these technical features, it should be considered to be within the scope described in this specification. The above-described embodiments only represent some embodiments of the present application, and the description thereof is more specific and detailed, but it cannot be understood as a limitation of the scope of the patent. It should be pointed out that those skilled in the art can make some modifications and improvements without departing from the spirit of the present application, and these belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the appended claims.

Description of Reference Numerals

[0047] 10 Crystal oscillator 11 Crystal resonator 12 Temperature-controlled oscillation element 15 Heating element 16 Circuit board 17 Metal lead 121 Oscillation circuit element 122 Temperature control circuit element 181 Package base 182 Metal cover 30 Crystal oscillator 31 Crystal resonator 32 Temperature-controlled oscillation chip 33 Insulating layer 33a First substrate portion 33b Second substrate portion 33c Coating portion 35 Heating element 311 Vibration element 312 Hermetic seal structure 331 Through hole 341 Electrode structure 351 First heating element 352 Second heating element 352a First portion 352b Second portion 352c Third portion 3121 Ceramic substrate 3121a cavity 3121c conductive adhesive 3122 cover plate 40 crystal oscillator with constant temperature 41 crystal resonator 42 temperature-controlled oscillation chip 43 insulating layer 45 heating element 411 vibrating element 412 hermetic sealing structure 431 via hole 441 electrode structure 4124 first sealing member 4125 second sealing member 80 electronic device 81 circuit board

Claims

1. A constant-temperature crystal oscillator, comprising: a crystal oscillator including a vibration element and a hermetic sealing structure sealed around the vibration element; a temperature control oscillation chip provided on one side of the crystal oscillator and having an oscillation circuit and a temperature control circuit; an insulating layer covering the outer periphery of the temperature control oscillation chip and the crystal oscillator; an electrode structure provided on the insulating layer; a through hole and a heating element electrically connected to the temperature control oscillation chip are provided in the insulating layer; the heating element includes a first heating element and / or a second heating element, the first heating element is located between the crystal oscillator and the temperature control oscillation chip, the second heating element is provided in a ring shape around the crystal oscillator and the temperature control oscillation chip, and a conductive material is provided in the through hole; the electrode structure is electrically connected to the temperature control oscillation chip through the conductive material in the through hole, and the constant-temperature crystal oscillator is characterized by this.

2. The crystal oscillator is a crystal oscillator with a ceramic package, and the hermetic sealing structure includes a ceramic substrate having a cavity and a cover plate covered on the ceramic substrate; a conductor structure is provided in the ceramic substrate, the vibration element is provided in the cavity and connected to the ceramic substrate by an adhesive, and the conductor structure of the ceramic substrate is also electrically connected to the temperature control oscillation chip. The constant-temperature crystal oscillator according to claim 1 is characterized by this.

3. The crystal oscillator is a crystal oscillator with an all-crystal package, and the hermetic sealing structure includes a first sealing member provided on one side of the vibration element and a second sealing member provided on the other side of the vibration element; the first sealing member, the vibration element and the second sealing member all include crystal materials. The constant-temperature crystal oscillator according to claim 1 is characterized by this.

4. The insulating layer is formed by a plurality of semiconductor deposition processes, the through hole is formed in the insulating layer by a semiconductor etching process, and the conductive material in the through hole, the first heating element and / or the second heating element, and the electrode structure are formed by a plurality of semiconductor deposition and etching processes. The constant-temperature crystal oscillator according to claim 2 is characterized by this.

5. The heating element has the first heating element and the second heating element, both ends of the first heating element are electrically connected to the second heating element or the temperature control oscillation chip, and both ends of the second heating element are respectively connected to the temperature control oscillation chip or the first heating element. The temperature-controlled crystal oscillator according to claim 1, characterized in that.

6. The number of the second heating elements is plural, and the plural second heating elements are electrically connected and provided in a ring shape on the outer periphery of the crystal oscillator and the temperature control oscillation chip. The temperature-controlled crystal oscillator according to claim 5, characterized in that.

7. A method for manufacturing a temperature-controlled crystal oscillator, Providing a temperature control oscillation chip having an oscillation circuit and a temperature control circuit; Providing a crystal oscillator having a vibration element and an airtight sealing structure sealed on the outer periphery of the vibration element, and providing the crystal oscillator on one side of the temperature control oscillation chip; Forming an insulating layer having a through hole and a heating element on the outer periphery of the temperature control oscillation chip and the crystal oscillator, providing a conductive material in the through hole, and including the heating element as a first heating element and / or a second heating element. Positioning the first heating element between the crystal oscillator and the temperature control oscillation chip, and installing the second heating element in a ring shape on the outer periphery of the crystal oscillator and the temperature control oscillation chip; Forming an electrode structure on the insulating layer, and electrically connecting the electrode structure to the temperature control oscillation chip through the conductive material in the through hole. A method for manufacturing a temperature-controlled crystal oscillator, characterized by comprising the steps of.

8. The insulating layer is formed by a plurality of semiconductor deposition processes, the through hole is formed in the insulating layer by a semiconductor etching process, and the conductive material in the through hole, the first heating element and / or the second heating element, and the electrode structure are formed by a plurality of semiconductor deposition and etching processes. The method for manufacturing a temperature-controlled crystal oscillator according to claim 7, characterized in that.

9. The method for manufacturing the temperature-controlled crystal oscillator further includes a step of providing a substrate, The insulating layer includes a first substrate portion, a second substrate portion, and a covering portion. The step of forming an insulating layer having the through hole and the heating element on the outer periphery of the temperature control oscillation chip and the crystal oscillator is Forming the first substrate portion having the first portion of the second heating element on the substrate and disposing the crystal oscillator on the first substrate portion; Forming a second substrate portion having the first heating element and the second portion of the second heating element on the first substrate portion; Providing the crystal oscillator on the second substrate portion; Forming a coating portion having the third portion of the second heating element and the via hole on the second substrate portion, and including: Here, the first substrate portion, the second substrate portion, and the coating portion are all formed by a semiconductor deposition process; The method for manufacturing a temperature-compensated crystal oscillator further includes the step of removing the substrate, and is the method for manufacturing a temperature-compensated crystal oscillator according to claim 7.

10. An electronic device comprising a circuit board on which a temperature-compensated crystal oscillator according to any one of claims 1 to 6 is mounted.

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