Temperature-compensated crystal oscillator, method of manufacturing the same, and electronic apparatus

Abstract

To provide a temperature-compensated crystal oscillator capable of coping with miniaturization and limitation of thermal capacity, a method of manufacturing the same, and an electronic apparatus equipped with the temperature compensated crystal oscillator.SOLUTION: A temperature-compensated crystal oscillator 30 includes: a crystal resonator 31; a temperature-compensated oscillation chip 32 with a built-in temperature sensor; an insulation layer 33; and a first electrode structure 34. The crystal resonator includes: a vibration element 311; and an airtight packaging structure 312 packaged on an outer periphery of the vibration element. The temperature-compensated oscillation chip 32 is disposed on one side of the hermetic sealed structure. The insulation layer covers at least one side of the temperature compensation oscillation chip and the airtight packaging structure, and includes a first via hole 331 formed with a conductive material and a heat insulation cavity 36 including a sealed cavity or a semi-sealed cavity. The insulation cavity has gas or is in a vacuum state. The first electrode structure is disposed on the insulating layer and electrically connected to the temperature-compensated oscillation chip through the conductive material in the first via hole.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present invention relates to the technical field of temperature-compensated crystal oscillators (TCXOs), and more particularly to temperature-compensated crystal oscillators, methods for manufacturing the same, and electronic devices including such temperature-compensated crystal oscillators.

Background Art

[0002] In the use of electronic devices, it is usually necessary to utilize a high-stability clock. For example, a temperature-sensing crystal (TSX) is combined with an external processing chip or a temperature-compensated crystal oscillator (TCXO). Among them, the TCXO generally includes a resonator and a temperature-compensated oscillation chip packaged integrally. The closer the crystal oscillation element of the resonator is to the temperature-compensated oscillation chip, the better. Thus, the temperature sensed by the temperature sensor built into the temperature-compensated oscillation chip can be closer to the temperature of the crystal oscillation element. However, quartz crystals generally belong to piezoelectric products and have an inherent hysteresis characteristic with respect to temperature sensing. Therefore, the faster the reaction to changes in the external temperature, the less able it is to meet the low-latency needs required for conventional high-speed network communications and the like.

[0003] However, as various electronic devices have become smaller, the package size of temperature-compensated crystal oscillators has gradually decreased. In order to protect existing temperature-compensated oscillation chips, it is necessary to install them in a cavity, making it difficult to reduce their size. Furthermore, miniaturized temperature-compensated crystal oscillators have problems such as being too fast in thermal response and the heat capacity of the ceramic base being restricted by the material properties of the ceramic base itself and not being able to be reduced. In particular, for miniaturized ceramic-based H-type crystal oscillators, it is necessary to consider both the airtightness requirements of traditional crystal oscillators and the bending strength with respect to the circuit board. These have become technical problems that temperature-compensated crystal oscillators must consider.

Summary of the Invention

Problems to be Solved by the Invention

[0004] Therefore, it is necessary to provide a temperature-compensated crystal oscillator that can cope with miniaturization and heat volume limitations, a manufacturing method thereof, and an electronic device including this temperature-compensated crystal oscillator.

Means for Solving the Problems

[0005] In a first aspect, the temperature-compensated crystal oscillator according to an embodiment of the present application includes a crystal resonator, a temperature-compensated oscillation chip incorporating a temperature sensor, an insulating layer, and a first electrode structure. The crystal resonator includes a vibration element and an airtight sealing structure encapsulated on the outer periphery of the vibration element. The temperature-compensated oscillation chip is disposed on one side of the airtight sealing structure. The insulating layer covers at least one side of the temperature-compensated oscillation chip and the airtight sealing structure, and has a first via hole formed of a conductive material and a heat insulation cavity. The heat insulation cavity includes a sealed cavity and / or a semi-closed cavity, and there is gas or a vacuum state in the heat insulation cavity. The first electrode structure is installed on the insulating layer and is electrically connected to the temperature-compensated oscillation chip through the conductive material in the first via hole.

[0006] In one embodiment, the crystal oscillator is a crystal oscillator in a ceramic package, and the hermetic seal structure includes a ceramic substrate having a cavity, a cover plate coated on the ceramic substrate, and a second electrode structure provided on the ceramic substrate. A conductor structure is provided on the ceramic substrate. The vibration element is provided in the cavity and connected to the ceramic substrate via an adhesive. The second electrode structure is further electrically connected to the conductor structure and the temperature compensation oscillation chip.

[0007] In one embodiment, the crystal oscillator is a crystal oscillator in an all-crystal package, and the hermetic seal structure includes a first seal member provided on one side of the vibration element, a second seal member provided on the other side of the vibration element, and a second electrode structure provided on the first seal member. The first seal member, the vibration element, and the second seal member each include a crystal material. The second electrode structure is electrically connected to the temperature compensation oscillation chip. The temperature compensation oscillation chip is provided on the first seal member and electrically connected to the second electrode structure. The insulating layer covers the oscillation chip and the first seal member.

[0008] In one embodiment, the insulating layer further has a second via hole, a conductive material is formed in the second via hole, the second electrode structure is electrically connected to the temperature compensation oscillation chip through the conductive material in the second via hole, the insulating layer is provided on at least one side of the temperature compensation oscillation chip and the hermetic sealing structure by a first semiconductor deposition process, the first via hole is formed in the insulating layer by a semiconductor etching process, the conductive material in the first via hole is formed in the first via hole by a second semiconductor deposition process, the first electrode structure is formed on the insulating layer by a second semiconductor deposition process or a third semiconductor deposition process, the second via hole is formed in the insulating layer by a second semiconductor etching process, the conductive material in the second via hole is formed in the second via hole by a fourth semiconductor deposition process, and the second electrode structure is formed on the first sealing member by a fourth semiconductor deposition process or a fifth semiconductor deposition process.

[0009] In one embodiment, there is gas in the seal cavity, and the gas is air.

[0010] In one embodiment, the seal cavity is formed by etching a part of the insulating layer by a third semiconductor etching process to form a semi-closed cavity, and further covering the opening of the semi-closed cavity with another part of the insulating layer.

[0011] In one embodiment, the heat insulation cavity includes the semi-seal cavity, and the semi-seal cavity is a groove structure provided around the first electrode structure.

[0012] In a second aspect, the invention of the present application provides steps of providing a manufacturing method of a temperature compensation crystal oscillator, the step of preparing a temperature compensation oscillation chip with a built-in temperature sensor, Prepare a crystal oscillator including a vibration element and a hermetic sealing structure encapsulated on the outer periphery of the vibration element, and arrange the crystal oscillator on one side of the temperature compensation oscillation chip; Form an insulating layer having a first via hole and a heat insulation cavity provided with a conductive material on at least one side of the temperature compensation oscillation chip and the hermetic sealing structure; Form a first electrode structure on the insulating layer, and electrically connect the first electrode structure to the temperature compensation oscillation chip through the conductive material in the first via hole; The heat insulation cavity includes a sealed cavity and / or a semi-sealed cavity, and there is gas or a vacuum state in the heat insulation cavity.

[0013] In one embodiment, the crystal oscillator is a crystal oscillator with a ceramic package or a crystal oscillator with an all-crystal package. The insulating layer is deposited on at least one side of the temperature compensation oscillation chip and the hermetic sealing structure by a first semiconductor deposition process. The first via hole is formed in the insulating layer by a semiconductor etching process. The conductive material in the first via hole is formed in the first via hole by a second semiconductor deposition process. The first electrode structure is formed on the insulating layer by a third semiconductor deposition process.

[0014] In one embodiment, there is gas in the seal cavity, the gas is air, and the seal cavity is formed by etching a part of the insulating layer by a third semiconductor etching process to form a semi-sealed cavity, and covering the opening of the semi-sealed cavity with another part of the insulating layer.

[0015] In a third aspect, the present invention further provides an electronic device including a circuit board provided with a temperature compensation crystal oscillator according to any of the above aspects.

Effect of the Invention

[0016] In the temperature-compensated crystal oscillator, its manufacturing method, and the electronic device including the temperature-compensated crystal oscillator according to the present invention, a temperature-compensated oscillation chip is directly installed on one side of the hermetic sealing structure of a crystal resonator that has already been packaged. Further, seal protection between the crystal resonator and the temperature-compensated oscillation chip is realized through an insulating layer, eliminating the need to provide a carrier substrate and its cavity for packaging the crystal resonator and the temperature-compensated oscillation chip, thus avoiding the problem that it is difficult to miniaturize the temperature-compensated crystal oscillator due to the carrier substrate and its cavity, and enabling the realization of the package of the miniaturized temperature-compensated crystal oscillator. Also, since the insulating layer covers the temperature-compensated oscillation chip, the temperature-compensated oscillation chip is not exposed, providing better protection for the temperature-compensated oscillation chip. Furthermore, the first electrode structure is provided on the insulating layer, enabling it to withstand the stress generated on the client terminal side where the temperature-compensated crystal oscillator is mounted on the circuit board, and having a buffering role, thereby enhancing the reliability of the circuit board of the temperature-compensated crystal oscillator and the electronic device including the temperature-compensated crystal oscillator.

[0017] Furthermore, due to the heat-insulating cavity in the insulating layer, the increased thermal resistance can delay the impact of an external heat source on the temperature-compensated crystal oscillator and has a good heat preservation effect, enabling the clock oscillation of the temperature-compensated crystal oscillator to be more stable. Also, since the temperature-compensated crystal oscillator generally uses a ceramic base and does not need to be directly welded to the circuit board, there is no need to consider its bending strength. Therefore, one can concentrate on optimizing the size, thickness, and / or material of the temperature-compensated crystal oscillator, enhancing the performance of the temperature-compensated crystal oscillator, and reducing the design difficulty and cost.

Brief Description of the Drawings

[0018] To more clearly explain the technical aspects in the embodiments or related technologies of the present application, the drawings necessary for use in the following description of the embodiments or related technologies will be briefly described below. Obviously, the drawings in the following description are only the embodiments of the present application, and those skilled in the art can also obtain other drawings from the provided drawings without creative labor.

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Best Mode for Carrying Out the Invention

[0019] To facilitate the understanding of the present application, the present application will be described in more detail below with reference to the related drawings. The drawings show preferred embodiments of the present application. However, the present application is not limited to the embodiments described in this specification and can be implemented in many different forms. Also, the purpose of providing these embodiments is to more fully understand the disclosure content of the present application.

[0020] In addition, when a component is said to be "fixed" to another component, it may be directly present on the other component or an intermediate medium may exist. When a component is recognized as being "connected" to another component, it may be directly connected to the other component or an intermediate medium may also be present simultaneously. The terms "inner", "outer", "left", "right" and similar expressions used in this specification are for illustrative purposes only and do not indicate the only embodiment.

[0021] Unless otherwise defined, all technical and scientific terms used in this specification have the same meaning as commonly understood by those skilled in the technical field of this application. The terms used in this specification are for the purpose of describing specific embodiments only and are not intended to limit this application. The term "and / or" used in this specification includes any and all combinations of one or more of the associated listed items.

[0022] Referring to FIG. 1. In the temperature-compensated crystal oscillator 10 of the related art shown in FIG. 1, a single cavity is formed in the ceramic base 13, and the crystal oscillator 11 and the oscillation chip 12 are respectively mounted on different layers. Generally, since the aforementioned crystal oscillator 11 is a crystal oscillator having piezoelectric characteristics, it is necessary to conduct and fix it to the aforementioned ceramic base 13 with a conductive medium such as a conductive silver adhesive 15. Moreover, the aforementioned temperature-compensated oscillation chip 12 is electrically connected to the aforementioned crystal oscillator 11 via the aforementioned ceramic base 13. Therefore, the voltage of the pins of the aforementioned temperature-compensated oscillation chip 12 can be measured via the electrode structure 14 (for example, solder pad) at the lower part of the aforementioned ceramic base 13, and the progress of the frequency fine-tuning process can be guaranteed.

[0023] Refer to FIG. 2. In another related-art temperature-compensated crystal oscillator 20, a ceramic base 23 forms an H-shaped upper and lower double cavity, and mounts an oscillation chip 22 and a crystal resonator 21 respectively. The advantage of the H shape is that when the miniaturization space is tight, the spaces for arranging the aforementioned temperature-compensated oscillation chip 22 and the aforementioned crystal resonator 21 can be made independent.

[0024] In the conventional packaging methods shown in FIGS. 1 and 2, no matter how much compression is done, any of the carrier substrates such as the aforementioned ceramic bases 13 and 23 must be provided with at least bosses for mounting the aforementioned crystal resonators 11 and 21, and the pins of the aforementioned temperature-compensated oscillation chips 12 and 22 need to be connected to the outside through the electrode structures 14 at the lower parts of the aforementioned ceramic bases 13 and 23. However, according to the inventors' research, when using the packaging methods of FIGS. 1 and 2 mentioned above, there are some drawbacks. Specifically, since there is a limit to the miniaturization of the sizes of the aforementioned temperature-compensated oscillation chips 12 and 22, the cavity space has to be made relatively large, and further, the wall thicknesses of the aforementioned ceramic bases 13 and 23 are compressed and can only become narrower and narrower. Also, the electrode structures 14 and 24 become relatively narrower. Even in the most advanced products of some international top manufacturers, there are technical bottlenecks that make it difficult to miniaturize the aforementioned temperature-compensated crystal oscillator.

[0025] When adopting the aforementioned packaging method, since it is difficult to miniaturize the aforementioned temperature-compensated oscillation chips 12 and 22, it also becomes difficult to miniaturize the cavities of the aforementioned ceramic bases 13 and 23, which further leads to a stagnation in the overall miniaturization of the temperature-compensated crystal oscillators 10 and 20. Also, as mentioned above, the miniaturized temperature-compensated crystal oscillator has problems such as too fast a thermal response and the heat capacity of the ceramic base being limited by the material properties of the ceramic base itself and not being able to become smaller, and there are technical problems such as the compatibility between the airtightness requirement and the bending strength installed on the circuit board.

[0026] In view of this, the structure of the temperature-compensated crystal oscillator proposed in the present application and its manufacturing method can realize a miniaturized package, and a temperature-compensated crystal oscillator with a small size and good thermal performance can be obtained.

[0027] Hereinafter, the temperature-compensated crystal oscillator provided by the embodiments of the present application and its manufacturing method will be described in more detail with reference to FIGS. 3 to 7.

[0028] <Example 1> Refer to FIGS. 3 to 5. FIG. 3 is a schematic cross-sectional structure view of the temperature-compensated crystal oscillator 30 provided by Example 1 of the present application. FIG. 4 is a schematic top view of the temperature-compensated crystal oscillator 30 provided by Example 1 of the present application. FIG. 5 is a schematic bottom view of the temperature-compensated crystal oscillator 30 provided by Example 1 of the present application. The aforementioned temperature-compensated crystal oscillator 30 includes a crystal resonator 31, an oscillation chip 32, an insulating layer 33, and a first electrode structure 34. The aforementioned oscillation chip 32 is a temperature-compensated oscillation chip with a built-in temperature sensor. It should be understood that the aforementioned temperature sensor can include one or more thermistors.

[0029] The aforementioned crystal resonator 31 includes a vibration element 311 and a hermetic sealing structure 312 encapsulated on the outer periphery of the vibration element 311. The crystal resonator 31 is a crystal resonance element that has already been packaged. In this embodiment, mainly, the case where the aforementioned crystal resonator 31 is a crystal resonator of a ceramic package will be described as an example.

[0030] The temperature-compensated oscillation chip 32 is provided on one side of the hermetic sealing structure 312 and may be electrically connected to the aforementioned hermetic sealing structure 312.

[0031] The aforementioned insulating layer 33 is coated on at least one side of the temperature-compensated oscillation chip 32 and the hermetic sealing structure 312. The insulating layer 33 has a first via hole 331. There is a conductive material in the aforementioned via hole 331. The aforementioned first electrode structure 34 is provided on the insulating layer 33 and is electrically connected to the temperature-compensated oscillation chip 32 through the conductive material in the aforementioned first via hole 331.

[0032] The first electrode structure 34 is a solder pad structure. The insulating layer 33 is a resin material. The first electrode structure 34 includes a plurality of first electrodes (i.e., a plurality of welding pads). The number of the first vias 331 can correspond to the number of the first electrodes. Thereby, the aforementioned first electrodes can be electrically connected to the conductive material in the corresponding first vias 331. As shown in FIG. 3, in this embodiment, the number of the first electrodes of the first electrode structure 34 is four, and they are respectively provided at the four corners of the bottom of the temperature-compensated crystal oscillator 30.

[0033] In this embodiment, the insulating layer 33 further has a heat insulation cavity 36. The aforementioned heat insulation cavity 36 is a sealed cavity. Also, the heat insulation cavity 36 has gas or is in a vacuum state. Preferably, there is gas such as air in the heat insulation cavity 36, but it is not limited to air. The number of the heat insulation cavities 36 may be one or more. Specifically, it may be set according to actual needs. In other embodiments, the heat insulation cavity 36 may be a semi-sealed cavity. That is, the heat insulation cavity 36 is an open cavity or a hollowed-out area communicating with the outer periphery of the temperature-compensated crystal oscillator 30. For example, at least one side, both sides or a plurality of sides of the heat insulation cavity 36 have openings communicating with the outer periphery of the temperature-compensated crystal oscillator 30.

[0034] In the temperature-compensated crystal oscillator 30 provided by this embodiment, the aforementioned temperature-compensated oscillation chip 32 is directly installed on one side of the hermetic sealing structure 312 of the packaged crystal resonator 31. Further, the sealing protection of the crystal resonator 31 and the temperature-compensated oscillation chip 32 is realized through the insulating layer 33, and there is no need to install a carrier substrate for packaging the crystal resonator 31 and the temperature-compensated oscillation chip 32 and its cavity, avoiding the problem that it is difficult to reduce the size of the temperature-compensated crystal oscillator 30 due to the carrier substrate and its cavity, and realizing the packaging of the miniaturized temperature-compensated crystal oscillator. Also, since the insulating layer 33 covers the temperature-compensated oscillation chip 32, the temperature-compensated oscillation chip 32 is not exposed, and the temperature-compensated oscillation chip 32 can be better protected. In addition, the first electrode structure 34 is provided on the insulating layer 33, can respond to the stress generated on the client terminal side where the temperature-compensated crystal oscillator 30 is placed on the circuit board, and has a buffering role. Thereby, the reliability of the temperature-compensated crystal oscillator 30 and the aforementioned circuit board having the temperature-compensated crystal oscillator 30 is enhanced.

[0035] Furthermore, the heat insulation cavity 36 in the insulating layer 33 can increase the thermal resistance and mitigate the thermal shock of the external heat source to the oscillator, and has a better heat preservation effect, and can make the clock oscillation of the temperature-compensated crystal oscillator 30 more stable. In addition, the temperature-compensated crystal oscillator 30 generally uses a ceramic base and does not need to be directly welded to the circuit board, so there is no need to consider the bending strength. Thereby, the temperature-compensated crystal oscillator 30 can focus on the optimization of size, thickness and / or material, improve the performance of the temperature-compensated crystal oscillator 30, and reduce the design difficulty and cost.

[0036] Specifically, the hermetic seal structure 312 may include a ceramic substrate 3121 having a cavity 3121a, a cover plate 3122 covering the ceramic substrate 3121, and a second electrode structure 3123 provided on the ceramic substrate 3121. A conductor structure 3121b may be provided in the ceramic substrate 3121. The vibration element 311 is provided in the cavity 3121a and can be electrically connected to the conductor structure 3121b via a conductive adhesive 3121c (e.g., conductive rubber). The second electrode structure 3123 is further electrically connected to the aforementioned conductor structure 3121b. The second electrode structure 3123 is further electrically connected to the temperature compensation oscillation chip 32. Thereby, the temperature compensation oscillation chip 32 is electrically connected to the crystal oscillator 31. The second electrode structure 3123 may be a pad structure. The second electrode structure 3123 may include a plurality of second electrodes (i.e., a plurality of welding pads). The number of the conductor structures 3121b can correspond to the number of the second electrodes. Therefore, the aforementioned second electrodes can be electrically connected to the corresponding conductor structures 3121b. The vibration element 311 is a crystal material.

[0037] Furthermore, in this embodiment, the insulating layer 33 has a second via hole 335, the second via hole 335 has a conductive material therein, and the second electrode structure 3123 can be electrically connected to the temperature compensation oscillation chip 32 through the conductive material in the second via hole 335.

[0038] In this embodiment, the insulating layer 33 may be deposited on one side of the temperature compensation oscillation chip 32 and the hermetic seal structure 312 by a first semiconductor deposition process. The first via hole 331 is formed in the insulating layer 33 by semiconductor etching. The aforementioned conductive material is formed in the first via hole 331 by a second semiconductor deposition process. The first electrode structure 34 is formed on the insulating layer 33 by a third semiconductor deposition process. The semiconductor etching process realizes the patterning of the material layer to be etched by sequentially depositing the material to be etched and the photosensitive etchant and exposing them according to the patterned mask.

[0039] <Example 2> Refer to FIG. 6. FIG. 6 is a cross-sectional view of the temperature-compensated crystal oscillator 40 provided according to Example 2 of the present application. The structure of the temperature-compensated crystal oscillator 40 in Example 2 is basically the same as that of the temperature-compensated crystal oscillator 30 in Example 1. That is, the description of the temperature-compensated crystal oscillator 30 in the above Example 1 can basically also be applied to the temperature-compensated crystal oscillator 40 in Example 2. Hereinafter, the differences between the temperature-compensated crystal oscillator 40 in Example 2 and the temperature-compensated crystal oscillator 30 in Example 1 will be mainly described.

[0040] In the temperature-compensated crystal oscillator 40 of Example 2, the first sealing member 4124, the second sealing member 4125, and the vibration element 411 are all crystal materials. That is, the crystal oscillator 41 is a crystal oscillator of an all-crystal package. The hermetic sealing structure 412 includes a first sealing member 4124 provided on one side of the vibration element 411, a second sealing member 4125 provided on the other side of the vibration element 411, and a second electrode structure 4123 disposed on the first sealing member 4124. The second electrode structure 4123 is also electrically connected to the temperature-compensated oscillation chip 42 through the conductive material in the second via hole 435.

[0041] Specifically, in this embodiment, the temperature-compensated oscillation chip 42 is provided on the first sealing member 4124 and is electrically connected to the second electrode structure 4123. The insulating layer 43 covers the temperature-compensated oscillation chip 42 and the first sealing member 4124.

[0042] In this embodiment, the insulating layer 43 further has a heat insulation cavity 46. The aforementioned heat insulation cavity 46 is a sealed cavity. The heat insulation cavity 46 has gas or is in a vacuum state. Preferably, there is gas such as air in the heat insulation cavity 46, but it is not limited to air. The number of the heat insulation cavities 46 may be one or more, and specifically may be set according to actual needs.

[0043] Basically the same as in Embodiment 1, the temperature compensation oscillator chip 42 is directly installed on one side of the hermetic seal structure 412 of the packaged crystal oscillator 41. Further, through the insulating layer 43, the seal protection between the crystal oscillator 41 and the temperature compensation oscillator chip 42 is realized, and there is no need to install a carrier substrate for packaging the crystal oscillator 41 and the temperature compensation oscillator chip 42 and its cavity, avoiding the problem that it is difficult to reduce the size of the temperature compensation crystal oscillator 40 due to the carrier substrate and its cavity, and a package of a miniaturized temperature compensation crystal oscillator can be realized. Also, since the insulating layer 43 covers the temperature compensation oscillator chip 42, the temperature compensation oscillator chip 42 is not exposed, and the temperature compensation oscillator chip 42 can be better protected. In addition, the first electrode structure 44 is provided on the insulating layer 43, can cope with the stress generated on the client terminal side where the temperature compensation crystal oscillator 40 is mounted on the circuit board, and has a buffering role. Thereby, the reliability of the temperature compensation crystal oscillator 40 and the aforementioned circuit board having the temperature compensation crystal oscillator 40 is enhanced.

[0044] Furthermore, the heat insulation cavity 46 in the insulating layer 43 can increase the thermal resistance and relieve the thermal shock of the external heat source to the oscillator, and has a better heat preservation effect, and can make the clock vibration of the temperature compensation crystal oscillator 40 more stable. Also, the temperature compensation crystal oscillator 40 generally uses a ceramic base and does not need to be directly welded to the circuit board. Therefore, there is no need to consider the bending strength, and the temperature compensation crystal oscillator 40 can concentrate on the optimization of dimensions, thickness and / or materials, improve the performance of the temperature compensation crystal oscillator 40, and reduce the design difficulty and cost.

[0045] <Embodiment 3> Refer to FIGS. 7 and 8 together. FIG. 7 is a cross-sectional view of the temperature-compensated crystal oscillator 50 provided by Embodiment 3 of the present application, and FIG. 8 is a schematic bottom view of the temperature-compensated crystal oscillator 50 provided by Embodiment 3 of the present application. The temperature-compensated crystal oscillator 50 in Embodiment 3 is basically the same as the temperature-compensated crystal oscillator 30 in Embodiment 1. That is, the description of the temperature-compensated crystal oscillator 30 in the above Embodiment 1 can basically also be applied to the temperature-compensated crystal oscillator 50 in Embodiment 3. Hereinafter, the differences between the temperature-compensated crystal oscillator 50 in Embodiment 3 and the temperature-compensated crystal oscillator 30 in Embodiment 1 will be mainly described.

[0046] In the temperature-compensated crystal oscillator 50, the heat-insulating cavity 56 of the insulating layer 53 further includes a semi-closed cavity 561. In this embodiment, the semi-closed cavity 561 is a groove structure provided around the outer periphery of the first electrode structure.

[0047] The above semi-closed cavity 561 can better exert technical effects such as facilitating heat insulation and heat dissipation at the bottom. Thereby, the reliability of the temperature-compensated crystal oscillator 50 and the circuit board having the temperature-compensated crystal oscillator 50 can be improved.

[0048] <Example 4> Refer to FIGS. 3 to 9. FIG. 9 is a flowchart of a manufacturing method of a temperature-compensated crystal oscillator provided by Embodiment 4 of the present application. The aforementioned manufacturing method includes the following steps S71 to S74.

[0049] In step S71, an oscillation chip is prepared. As shown in FIGS. 3 to 9, the aforementioned temperature-compensated oscillation chip may be the oscillation chips 32, 42, 52 described in any one of Embodiments 1 to 3.

[0050] In step S72, a crystal oscillator is provided and installed on one side of the temperature-compensated oscillation chip described above. The crystal oscillator described above includes a vibration element and a hermetic sealing structure encapsulated around the vibration element. Specifically, as shown in FIGS. 3 to 8, the crystal oscillator described above is a crystal oscillator in a ceramic package or a crystal oscillator in a full-crystal package, that is, it may be the crystal oscillator 31, 41, 51 described in any of Examples 1 to 3, and will not be further described here.

[0051] In step S73, an insulating layer having a first via hole and a heat insulation cavity is formed on at least one side of the temperature-compensated oscillation chip and the hermetic sealing structure. The first via hole has a conductive material. The heat insulation cavity includes a sealed cavity and / or a semi-closed cavity. There is gas or it is in a vacuum state in the heat insulation cavity. Since the structures of the insulating layers 33, 43, 53, the first via holes 331, 431, 531 and the heat insulation cavities 36, 46, 56, and the conductive materials of the first via holes 331, 431, 531 described above have been described in detail in Example 1, they will not be further described here.

[0052] In step S74, a first electrode structure is formed on the insulating layer described above, and the first electrode structure is electrically connected to the temperature-compensated oscillation chip described above through the conductive material in the first via hole described above. Although the first electrode structures 34, 44, 54 described above have been described in detail in Example 1, they will not be further described here.

[0053] <Example 5> Referring to FIG. 10, FIG. 10 is a schematic block diagram of an electronic device 80 provided according to Example 5 of the present application. The electronic device 80 according to this Example 5 may be a portable electronic device such as a mobile phone, a tablet, a display, a notebook computer, a digital camera, etc., but is not limited thereto. The electronic device 80 described above may include a circuit board 81 provided with the temperature-compensated crystal oscillator 30, 40, 50 described in any of the above Examples.

[0054] Each of the technical features in the above-described embodiments may be arbitrarily combined. For the sake of brevity of description, not all possible combinations of the technical features in the above-described embodiments are described, but as long as there is no contradiction in the combination of these technical features, it should be considered to be within the scope described in this specification. The above-described embodiments only represent some embodiments of the present application, and the description thereof is more specific and detailed. However, it cannot be understood as a limitation of the patent scope of the present invention. It should be pointed out that those skilled in the art can make some modifications and improvements without departing from the gist of the present application, and these also belong to the protection scope of the present application. Therefore, the protection scope required by the present invention shall be in accordance with the appended claims.

Description of Reference Numerals

[0055] 10, 20, 30, 40, 50 Temperature Compensated Crystal Oscillator 11, 21, 31, 41 Crystal Oscillator 12, 22, 32, 42 Temperature Compensation Oscillation Chip 13, 23 Ceramic Base 14, 24 Electrode Structure 15 Conductive Silver Adhesive 33, 43, 53 Insulation Layer 34, 44, 54 First Electrode Structure 311, 411 Vibration Element 312, 412 Hermetic Seal Structure 331, 431, 531 First Through Hole 36, 46, 56 Heat Insulation Cavity 3121 Ceramic Substrate 3121a Cavity 3121b Conductor Structure 3121c Conductive Adhesive 3122 Cover Plate 3123, 4123 Second Electrode Structure 335, 435 Second Through Hole 4124 First Seal Member 4125 Second Seal Member 561 Semi-hermetic Cavity 80 Electronic Equipment 81 Circuit board

Claims

1. A temperature-compensated crystal oscillator, comprising: a crystal resonator, a temperature-compensated oscillation chip, an insulating layer, and a first electrode structure; wherein the crystal resonator includes a vibrating element and a hermetic sealing structure encapsulated on the outer periphery of the vibrating element; the temperature-compensated oscillation chip is disposed on one side of the hermetic sealing structure; the insulating layer covers at least one side of the temperature-compensated oscillation chip and the hermetic sealing structure, has a first via hole formed with a conductive material, and has a heat-insulating cavity including a sealed cavity and / or a semi-sealed cavity, and the heat-insulating cavity has gas or is in a vacuum state; the first electrode structure is provided on the insulating layer and is electrically connected to the temperature-compensated oscillation chip through the conductive material in the first via hole.

2. The crystal resonator is a crystal resonator with a ceramic package. The hermetic sealing structure includes a ceramic substrate having a cavity, a cover plate coated on the ceramic substrate, and a second electrode structure provided on the ceramic substrate. A conductor structure is provided on the ceramic substrate. The vibrating element is provided in the cavity and is connected to the ceramic substrate through an adhesive. The second electrode structure is further electrically connected to the conductor structure and the temperature-compensated oscillation chip.

3. The crystal resonator is a crystal resonator with an all-crystal package. The hermetic sealing structure includes a first sealing member provided on one side of the vibrating element, a second sealing member provided on the other side of the vibrating element, and a second electrode structure provided on the first sealing member. The first sealing member, the vibrating element, and the second sealing member each include a crystal material. The second electrode structure is electrically connected to the temperature-compensated oscillation chip. The temperature-compensated oscillation chip is provided on the first sealing member and is electrically connected to the second electrode structure. The insulating layer covers the temperature-compensated oscillation chip and the first sealing member.

4. The insulating layer further has a second via hole, and a conductive material is formed in the second via hole. The second electrode structure is electrically connected to the temperature compensation oscillation chip through the conductive material in the second via hole. The insulating layer is provided on at least one side of the temperature compensation oscillation chip and the hermetic sealing structure by a first semiconductor deposition process. The first via hole is formed in the insulating layer by a semiconductor etching process. The conductive material in the first via hole is formed in the first via hole by a second semiconductor deposition process. The first electrode structure is formed on the insulating layer by a second semiconductor deposition process or a third semiconductor deposition process. The second via hole is formed in the insulating layer by a second semiconductor etching process. The conductive material in the second via hole is formed in the second via hole by a fourth semiconductor deposition process. The second electrode structure is formed on the first sealing member by a fourth semiconductor deposition process or a fifth semiconductor deposition process. The temperature compensation crystal oscillator according to claim 3, characterized in that.

5. There is gas in the sealed cavity, the gas is air, and the sealed cavity is formed by etching a part of the insulating layer by a third semiconductor etching process to form a semi-sealed cavity, and further covering the opening of the semi-sealed cavity with another part of the insulating layer. The temperature compensation crystal oscillator according to claim 1, characterized in that.

6. The heat insulation cavity includes the semi-sealed cavity, and the semi-sealed cavity is a notch structure provided around the first electrode structure. The temperature compensation crystal oscillator according to claim 1, characterized in that.

7. A method for manufacturing a temperature compensation crystal oscillator, Preparing a temperature compensation oscillation chip with a built-in temperature sensor; Preparing a crystal oscillator including a vibration element and a hermetic sealing structure encapsulated on the outer periphery of the vibration element, and arranging the crystal oscillator on one side of the temperature compensation oscillation chip; Forming an insulating layer having a first via hole provided with a conductive material and a heat insulation cavity on at least one side of the temperature compensation oscillation chip and the hermetic sealing structure; forming a first electrode structure on the insulating layer and electrically connecting the first electrode structure to the temperature compensation oscillator chip through the conductive material in the first via hole; The heat insulation cavity includes a sealed cavity and / or a semi-sealed cavity, and there is gas or it is in a vacuum state in the heat insulation cavity. A method for manufacturing a temperature compensation crystal oscillator is characterized by this.

8. The crystal oscillator is a crystal oscillator with a ceramic package or a crystal oscillator with an all-crystal package. The insulating layer is deposited on at least one side of the temperature compensation oscillator chip and the hermetic sealing structure by a first semiconductor deposition process. The first via hole is formed in the insulating layer by a semiconductor etching process. The conductive material in the first via hole is formed in the first via hole by a second semiconductor deposition process. The first electrode structure is formed on the insulating layer by a third semiconductor deposition process. A method for manufacturing a temperature compensation crystal oscillator according to claim 7, characterized by this.

9. There is gas in the sealed cavity, the gas is air, and the sealed cavity is formed by etching a part of the insulating layer by a third semiconductor etching process to form a semi-sealed cavity, and further covering the opening of the semi-sealed cavity with another part of the insulating layer. A method for manufacturing a temperature compensation crystal oscillator according to claim 7, characterized by this.

10. An electronic device comprising a circuit board provided with a temperature compensation crystal oscillator according to any one of claims 1 to 6.

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