Method for conditioning polishing tool, substrate processing method, and substrate processing device

Abstract

To provide a method for conditioning a polishing tool, a substrate processing method, and a substrate processing device capable of reducing the time required for conditioning a polishing tool.SOLUTION: A method for conditioning a polishing tool 89 includes: a substrate rotation step of holding a silicon dummy substrate DW having a main surface in a non-mirror state in a horizontal posture and rotating the dummy substrate DW about a vertical axis AX5; and a conditioning execution step of executing conditioning of the polishing tool 89 by bringing the polishing tool 89 into contact with the main surface of the dummy substrate DW that is being rotated. The main surface of the dummy substrate DW in the non-mirror state is formed by processing the main surface of the dummy substrate DW by using a chemical solution.SELECTED DRAWING: Figure 6

Description

Technical Field

[0001] The present invention relates to a conditioning method for a polishing tool for polishing the back surface of a substrate, a substrate processing method, and a substrate processing apparatus. The substrate includes, for example, a semiconductor substrate, a substrate for an FPD (Flat Panel Display), a glass substrate for a photomask, a substrate for an optical disk, a substrate for a magnetic disk, a ceramic substrate, a substrate for a solar cell, and the like. Examples of the FPD include a liquid crystal display device, an organic EL (electroluminescence) display device, and the like.

Background Art

[0002] Conventionally, in the exposure process of lithography, there has been a problem of defocus where the focus is not achieved. The problem of defocus is caused by dust adhering to the back surface of the substrate. Brush treatment is performed to remove the dust. However, for example, if the dust is embedded in the back surface of the substrate, the conventional PVA (polyvinyl alcohol) sponge brush cannot remove the dust. Therefore, a polishing brush (polishing tool) containing abrasive grains is used to remove the dust (see, for example, Patent Document 1).

[0003] Patent Document 2 discloses a polishing apparatus including a polishing table. When a new polishing pad is attached to the polishing table, the polishing table rotates and a dummy wafer is pressed against the polishing pad to perform a start-up operation of the polishing pad.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0005] In the case of a conventional PVA brush, after brush replacement, a process is performed for the purpose of removing the initial contamination of the brush and increasing the cleanliness of the brush. This processing time has not been a particularly big problem.

[0006] On the other hand, in the case of a polishing brush, conditioning of the brush surface is performed using a silicon dummy wafer. Conditioning is an operation of shaving off excessive protrusions of abrasive grains contained in the polishing brush by bringing the polishing brush into contact with the dummy wafer, and is performed for the purpose of suppressing the occurrence of scratches during wafer processing. This conditioning may take, for example, 4 to 6 hours. Therefore, after replacement of the polishing brush, the apparatus (or processing unit) cannot be used until the processing of the production wafer becomes possible, so the production efficiency decreases.

[0007] The present invention has been made in view of such circumstances, and an object thereof is to provide a conditioning method for a polishing tool, a substrate processing method, and a substrate processing apparatus capable of shortening the time required for conditioning the polishing tool.

Means for Solving the Problems

[0008] In order to achieve such an object, the present invention has the following configuration. That is, the conditioning method for a polishing tool according to the present invention includes a substrate rotation step of holding a silicon dummy substrate having a non-mirror surface main surface in a horizontal posture and rotating the dummy substrate around a vertical axis, and a conditioning execution step of executing conditioning of the polishing tool by bringing a polishing tool having a resin body in which abrasive grains are dispersed into contact with the main surface of the rotated dummy substrate, and the non-mirror surface main surface of the dummy substrate is formed by treating the main surface of the dummy substrate with a chemical solution.

[0009] According to the conditioning method of the abrasive tool according to the present invention, in order to condition the abrasive tool having a resin body in which abrasive grains are dispersed, a silicon dummy substrate having a non-mirror main surface is used. Since the non-mirror main surface is rougher than the mirror surface, the time required for conditioning can be shortened compared to a silicon dummy substrate having a mirror main surface. Thereby, the time from when the abrasive tool is replaced until the processing of the production substrate becomes possible can be shortened.

[0010] Further, the non-mirror main surface of the dummy substrate is formed by treating the main surface of the dummy substrate with a chemical solution. An inexpensive dummy substrate that is easily available in a factory such as a semiconductor can be processed and used without using a special tool.

[0011] Further, in the above-described conditioning method of the abrasive tool, in the conditioning execution step, it is preferable that a cleaning liquid containing a chemical solution is discharged onto the main surface of the dummy substrate.

[0012] Further, in the above-described conditioning method of the abrasive tool, it is preferable that the chemical solution is ammonia water. By treating with ammonia water, a non-mirror main surface of the dummy substrate can be formed.

[0013] Further, in the above-described conditioning method of the abrasive tool, the conditioning execution step preferably executes the conditioning of the abrasive tool by moving the abrasive tool between the center and the periphery of the dummy substrate while bringing the abrasive tool into contact with the main surface of the rotating dummy substrate.

[0014] By moving the abrasive tool between the center and the periphery of the dummy substrate, the abrasive tool can be conditioned.

[0015] Further, the substrate processing method according to the present invention includes the above-described conditioning method of the abrasive tool and a polishing step of polishing the back surface of the production substrate using the abrasive tool that has been conditioned.

[0016] According to the substrate processing method of the present invention, in order to condition an abrasive tool having a resin body in which abrasive grains are dispersed, a silicon dummy substrate having a non-mirror main surface is used. Since the non-mirror main surface has a rougher surface than a mirror surface, the time required for conditioning can be shortened compared to a silicon dummy substrate having a mirror main surface. Thereby, the time from when the abrasive tool is replaced until the production substrate can be processed can be shortened. Further, using the conditioned abrasive tool, the back surface of the production substrate can be polished while suppressing scratches.

[0017] Further, the substrate processing apparatus according to the present invention includes a holding and rotating unit that holds a silicon dummy substrate having a non-mirror main surface in a horizontal posture and rotates the dummy substrate around a vertical axis, an abrasive tool having a resin body in which abrasive grains are dispersed, an abrasive tool moving mechanism that moves the abrasive tool, and a control unit that controls the processing of the substrate. The control unit causes the abrasive tool to contact the main surface of the dummy substrate that is being rotated by the holding and rotating unit by the abrasive tool moving mechanism, executes conditioning of the abrasive tool, and the non-mirror main surface of the dummy substrate is formed by treating the main surface of the dummy substrate with a chemical solution.

[0018] According to the substrate processing apparatus of the present invention, in order to condition an abrasive tool having a resin body in which abrasive grains are dispersed, a silicon dummy substrate having a non-mirror main surface is used. Since the non-mirror main surface has a rougher surface than a mirror surface, the time required for conditioning can be shortened compared to a silicon dummy substrate having a mirror main surface. Thereby, the time from when the abrasive tool is replaced until the production substrate can be processed can be shortened.

[0019] Further, the non-mirror surface of the dummy substrate is formed by treating the main surface of the dummy substrate with a chemical solution. An inexpensive dummy substrate that is easily available in a factory such as a semiconductor factory can be processed and used without using a special tool.

[0020] Further, in the substrate processing apparatus described above, a cleaning liquid nozzle that discharges a cleaning liquid to the dummy substrate and a cleaning liquid supply unit that supplies the cleaning liquid to the cleaning liquid nozzle are provided, and the control unit further controls the cleaning liquid supply unit, and when performing conditioning of the polishing tool, it is preferable to discharge a cleaning liquid containing a chemical solution to the dummy substrate through the cleaning nozzle.

[0021] Further, in the substrate processing apparatus described above, it is preferable that the non-mirror surface state is a state rougher than a mirror surface. Conditioning of the polishing tool can be performed using a dummy substrate having a main surface in a non-mirror surface state that is rougher than a mirror surface.

[0022] Further, in the substrate processing apparatus described above, it is preferable that the non-mirror surface state is a state rougher than the back surface of the dummy substrate, and the back surface is rougher than a mirror surface. Conditioning of the polishing tool can be performed using a dummy substrate having a main surface in a non-mirror surface state that is rougher than the back surface of the dummy substrate.

[0023] Further, the substrate processing apparatus described above further includes a dummy substrate storage unit that stores the dummy substrate and a transfer robot that transfers the dummy substrate, and when the control unit performs conditioning of the polishing tool, the dummy substrate is transferred from the dummy substrate storage unit to the holding and rotating unit by the transfer robot, and after performing conditioning of the polishing tool, the dummy substrate is transferred from the holding and rotating unit to the dummy substrate storage unit by the transfer robot.

[0024] When performing conditioning of the polishing tool, the dummy substrate can be taken out from the dummy substrate storage unit, and after performing the conditioning, the dummy substrate can be returned to the dummy substrate storage unit.

[0025] In addition, the above-described substrate processing apparatus further includes a carrier for storing production substrates, and after conditioning the abrasive tool, the control unit causes the transfer robot to transfer the production substrate from the carrier to the holding and rotating unit, and preferably polishes the back surface of the production substrate held by the holding and rotating unit using the abrasive tool. By using the conditioned abrasive tool, the back surface of the production substrate can be polished while suppressing scratches. Also, a tool that can shorten the time required for conditioning is a dummy substrate. Therefore, the transfer robot can handle the dummy substrate in the same manner as the production substrate.

Advantages of the Invention

[0026] According to the method for conditioning an abrasive tool, the substrate processing method, and the substrate processing apparatus according to the present invention, the time required for conditioning the abrasive tool can be shortened.

Brief Description of the Drawings

[0027]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Example

[0028] Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a diagram showing a schematic configuration of a dummy substrate processing apparatus 1 according to an embodiment.

[0029] (1) Configuration of the dummy substrate processing apparatus Referring to FIG. 1, first, a dummy substrate processing apparatus 1 for creating a dummy substrate (dummy wafer) DW for conditioning an abrasive tool 89, which will be described later, will be explained. The dummy substrate processing apparatus 1 processes, for example, a disc-shaped dummy substrate DW. The dummy substrate processing apparatus 1 includes a holding and rotating unit 3, a chemical solution supply unit 5, a cleaning solution supply unit 7, a rinse solution supply unit 9, and a brush mechanism 11.

[0030] The holding and rotating unit 3 holds the dummy substrate DW and rotates the dummy substrate DW around the vertical axis AX1. The holding and rotating unit 3 includes a spin chuck 3A and a rotation driving unit 3B. The spin chuck 3A is a vacuum chuck that holds the dummy substrate DW by vacuum-sucking the back surface of the dummy substrate DW. Note that the spin chuck 3A may be a mechanical chuck (see FIG. 6) or an electrostatic chuck. The rotation driving unit 3B rotates the dummy substrate DW held by the spin chuck 3A around the vertical axis AX1. The rotation driving unit 3B includes an electric motor.

[0031] The chemical solution supply unit 5 includes a chemical solution nozzle 13, a chemical solution pipe 15, a chemical solution supply source 17, and an on-off valve V1. The chemical solution nozzle 13 discharges a chemical solution onto the main surface (front surface) of the dummy substrate DW held by the holding and rotating unit 3. As the chemical solution, for example, aqueous ammonia is used. Aqueous ammonia (ammonia ratio: 2 to 3%) is ammonia (NH3 ) is a liquid diluted with pure water. Note that the chemical solution is not limited to aqueous ammonia. The chemical solution pipe 15 connects the chemical solution nozzle 13 and the chemical solution supply source 17. The chemical solution supply source 17 supplies the chemical solution to the chemical solution nozzle 13 through the chemical solution pipe 15. The on-off valve V1 is provided in the chemical solution pipe 15.

[0032] The cleaning liquid supply unit 7 includes a cleaning liquid nozzle 19, a cleaning liquid pipe 21, a cleaning liquid supply source 23, and an on-off valve V2. The cleaning liquid nozzle 19 discharges the cleaning liquid onto the main surface of the dummy substrate DW held by the holding and rotating unit 3. As the cleaning liquid, for example, SC1 is used. SC1 is a mixed liquid of ammonia, hydrogen peroxide water (H 2 O 2 ), and water. The cleaning liquid pipe 21 connects the cleaning liquid nozzle 19 and the cleaning liquid supply source 23. The on-off valve V2 is provided in the cleaning liquid pipe 21.

[0033] The rinse liquid supply unit 9 includes a rinse liquid nozzle 25, a rinse liquid pipe 27, a rinse liquid supply source 29, and an on-off valve V3. The rinse liquid nozzle 25 discharges the rinse liquid onto the main surface of the dummy substrate DW held by the holding and rotating unit 3. As the rinse liquid, for example, pure water such as deionized water (DIW) is used. The rinse liquid pipe 27 connects the rinse liquid nozzle 25 and the rinse liquid supply source 29. The on-off valve V3 is provided in the rinse liquid pipe 27.

[0034] The three on-off valves V1, V2, V3 and the two on-off valves V5, V6 described later each supply the liquid and stop the supply. The chemical solution nozzle 13 is fixed at a position outside the dummy substrate DW. The two nozzles 19, 25 are each moved in the horizontal direction (XY direction) and the vertical direction (Z direction) by a nozzle moving unit (having an electric motor) not shown. Note that the chemical solution nozzle 13 may be moved by the nozzle moving unit in the same manner as the two nozzles 19, 25. Also, the two nozzles 19, 25 may each be fixed at a position outside the dummy substrate DW.

[0035] The brush mechanism 11 includes a brush 31, an arm 33, and a brush moving unit 35. As the brush 31, for example, a sponge brush of PVA (polyvinyl alcohol) is used. The brush 31 is formed in a columnar shape. The arm 33 supports the brush 31. The brush moving unit 35 rotates the brush 31 via the arm 33 around the vertical axis AX2 outside the dummy substrate DW held by the holding and rotating unit 3, for example. The brush moving unit 35 moves the brush 31 in the vertical direction. Further, the brush moving unit 35 rotates the brush 31 around the vertical axis AX3 passing through the center line of the brush 31. The brush moving unit 35 includes, for example, three electric motors. Note that the brush mechanism 11 may be configured in the same manner as the back surface polishing mechanism 67 described later, except for the abrasive 89.

[0036] The dummy substrate processing apparatus 1 includes a control unit 37 and a storage unit (not shown). The control unit 37 controls the processing of the dummy substrate DW. The control unit 37 includes one or more processors such as a central processing unit (CPU), for example. The storage unit includes at least one of, for example, a ROM (Read-Only Memory), a RAM (Random-Access Memory), and a hard disk. The storage unit stores a computer program necessary for the control unit 37 to control each component of the dummy substrate processing apparatus 1.

[0037] (2) Operation of the dummy substrate processing apparatus Next, the operation of the dummy substrate processing apparatus 1 will be described with reference to the flowchart of FIG. 2 and the like. FIG. 2 is a flowchart for explaining the operation of the dummy substrate processing apparatus 1. FIG. 3 is a side view for explaining the chemical solution treatment of the dummy substrate DW.

[0038] 〔Step S01〕 Cleaning The dummy substrate DW is conveyed onto the spin chuck 3A of the holding and rotating unit 3. The spin chuck 3A holds the back surface of the dummy substrate DW by vacuum suction. At this time, the main surface of the dummy substrate DW faces upward, and the back surface of the dummy substrate DW faces downward. The dummy substrate DW is a bare silicon substrate. Also, the main surface of the dummy substrate DW is in a mirror state. That is, the main surface has not undergone epitaxial growth and remains in the state where it has been mirror-finished by a polishing device in the manufacturing process of the dummy substrate DW. Note that epitaxial growth may be performed on the main surface of the dummy substrate DW.

[0039] The rotation drive unit 3B of the holding and rotating unit 3 rotates the dummy substrate DW held by the spin chuck 3A around the vertical axis AX1. Also, the cleaning liquid nozzle 19 is moved above the center of the dummy substrate DW by a nozzle moving unit (not shown). Then, by opening the on-off valve V2, the cleaning liquid nozzle 19 discharges SC1 as a cleaning liquid onto the dummy substrate DW held by the spin chuck 3A. The SC1 discharged onto the dummy substrate DW spreads on the main surface of the dummy substrate DW by rotation. Thereby, the main surface of the dummy substrate DW is cleaned. Also, the excess SC1 is scattered from the main surface of the dummy substrate DW by the rotation of the dummy substrate DW. Then, by closing the on-off valve V2, the cleaning liquid nozzle 19 stops discharging SC1. Note that SC1 contains ammonia, but no reaction occurs that would roughen the main surface of the dummy substrate DW.

[0040] 〔Step S02〕Chemical solution treatment (surface roughening treatment) Thereafter, by opening the on-off valve V1, the chemical liquid nozzle 13 discharges aqueous ammonia at room temperature (23°C) as a chemical liquid near the center of the dummy substrate DW held and rotated by the holding and rotating unit 3. As a result, the SC1 on the main surface of the dummy substrate DW is spread by the rotation of the dummy substrate DW and replaced with aqueous ammonia. Further, the excess aqueous ammonia is scattered from the main surface of the dummy substrate DW by the rotation of the dummy substrate DW. The aqueous ammonia performs a roughening process (etching process) on the main surface of the dummy substrate DW. The discharge of the aqueous ammonia onto the main surface of the dummy substrate DW is performed for about 5 hours, for example. After about 1 hour has elapsed, the main surface that was in a mirror state begins to become cloudy. That is, the main surface begins to fog up.

[0041] When discharging aqueous ammonia onto the main surface of the dummy substrate DW, the main surface is scanned with the brush 31. Specifically, it will be described. As shown in FIG. 3, the brush moving unit 35 of the brush mechanism 11 moves the brush 31 from the standby position P1 to the upper position P2 above the center of the dummy substrate DW. Further, the brush moving unit 35 rotates the brush 31 around the vertical axis AX3.

[0042] Thereafter, the brush moving unit 35 lowers the brush 31 from the upper position P2 to the center position P3 to bring the lower surface of the brush 31 into contact with the main surface of the dummy substrate DW. Thereafter, with the brush 31 in contact with the dummy substrate DW, the brush moving unit 35 moves from the center position P3 to the peripheral position P4 of the dummy substrate DW. Thereafter, the brush moving unit 35 raises the brush 31 from the position P4 to its upper position P5 to separate the brush 31 from the dummy substrate DW.

[0043] While ammonia water is being supplied onto the main surface of the dummy substrate DW, the brush moving unit 35 repeats the movement of the brush 31 in the order of the upper position P2, the center position P3, the peripheral position P4, and the peripheral rising position P5. The scan of the brush 31 can spread the ammonia water over the entire main surface of the dummy substrate DW. Optionally, the scan of the brush 31 may be performed with the brush 31 in contact with the ammonia water and the lower surface of the brush 31 slightly lifted from the main surface of the dummy substrate DW. Also, the scan of the brush 31 may be omitted.

[0044] After discharging ammonia water for a predetermined time (e.g., 5 hours) and then closing the on-off valve V1, the chemical liquid nozzle 13 stops discharging ammonia water. At the same time, the brush moving unit 35 returns the brush 31 to the standby position P1. The rotation of the dummy substrate DW continues.

[0045] 〔Step S03〕Rinse and Dry The rinse liquid nozzle 25 is moved to a position above the center of the dummy substrate DW by a nozzle moving unit (not shown). The rinse liquid nozzle 25 is moved so as not to interfere with the brush 31 or the like. After stopping the discharge of ammonia water, by opening the on-off valve V3, the rinse liquid nozzle 25 discharges pure water (e.g., DIW) onto the main surface of the rotating dummy substrate DW. As a result, the pure water is spread over the main surface of the dummy substrate DW by rotation. Therefore, the ammonia water on the dummy substrate DW is replaced with pure water. The excess pure water is scattered from the dummy substrate DW by rotation.

[0046] Thereafter, by closing the on-off valve V3, the rinse liquid nozzle 25 stops discharging pure water. Thereafter, the rotation drive unit 3B of the holding and rotating unit 3 rotates the dummy substrate DW at a high speed to shake off the pure water adhering to the dummy substrate DW. As a result, spin drying is performed. Thereafter, the rotation drive unit 3B stops the rotation of the dummy substrate DW. Thereafter, the spin chuck 3A releases the holding of the dummy substrate DW.

[0047] As described above, a dummy substrate DW for conditioning the abrasive 89 is created. The non-mirror main surface of the dummy substrate DW is formed by treating the main surface of the dummy substrate DW with a chemical solution. That is, the main surface of the dummy substrate DW is roughened from the normal mirror state to a non-mirror state using a chemical solution (ammonia water). As a result, an inexpensive dummy substrate DW that is easily available in a factory such as a semiconductor factory can be processed and used without using a special tool. For example, when in the mirror state, the characters reflected on the main surface could be read, but when in the non-mirror state, since the main surface becomes like ground glass, the characters reflected on the main surface cannot be read.

[0048] FIG. 4(a) shows the measurement results of the surface roughness (arithmetic mean roughness Ra and maximum height Ry) after treatment with ammonia water (chemical solution). FIG. 4(b) shows the measurement positions PS1 to PS9 in FIG. 4(a). Note that the maximum height Ry is the width (difference) between the maximum and minimum values of the surface unevenness. In FIG. 4(a), the average value of the surface roughness (arithmetic mean roughness) Ra of the main surface of the dummy substrate DW is 0.639 μm (micrometer).

[0049] On the other hand, an attempt was made to measure the surface roughness Ra of the main surface of the dummy substrate DW before treatment with ammonia water, but due to the measurement accuracy (resolution) of the measuring device, it could not be measured. Therefore, the surface roughness Ra after treatment with ammonia water (chemical solution) is compared based on the information on the Internet HP. According to Information 1 (URL: see below), the surface roughness Ra of the silicon wafer is 0.140 nm (nanometer). According to Information 2 (URL: see below), the surface roughness Ra after CMP (Chemical Mechanical Polishing) processing of the silicon wafer is 0.22 nm (nanometer). Therefore, it can be seen that the main surface of the dummy substrate DW treated with ammonia water (roughening treatment) is rougher than the surface of a normal mirror-state silicon substrate after CMP processing. (i) URL of Information 1 (https: / / www.ube.co.jp / usal / documents / s264_121.htm) (ii) URL of Information 2 (https: / / www.ipros.jp / news / detail / 49335 / )

[0050] As shown in Fig. 4(a), the average value of the surface roughness Ra of the back surface of the dummy substrate DW is 0.032 μm (micrometer). Therefore, the main surface after the treatment with aqueous ammonia is rougher than the back surface that has not been treated with aqueous ammonia. That is, the non-mirror surface state of the main surface of the dummy substrate DW is rougher than the back surface of the dummy substrate DW. The back surface is the surface on the opposite side of the main surface.

[0051] (3) Configuration of the production substrate processing apparatus Next, with reference to Fig. 5, the production substrate processing apparatus 41 will be described. The production substrate processing apparatus 41 performs conditioning of the polishing tool 89 using the non-mirror surface state dummy substrate DW, and polishes the back surface of the production substrate (production wafer) W using the polished polishing tool 89. The production substrate processing apparatus 41 includes an index block 43 and a processing block 45. The production substrate processing apparatus 41 corresponds to the substrate processing apparatus of the present invention.

[0052] (3-1) Configuration of the index block The index block 43 includes two carrier placement shelves 47 and an index robot IR. Each carrier placement shelf 47 is a shelf for placing the carrier C that houses the substrate W.

[0053] The carrier C houses a plurality of (for example, 25) substrates W in the vertical direction Z at a predetermined interval in a horizontal posture. The carrier C uses a FOUP (Front Open Unified Pod), but a container other than the FOUP, for example, a SMIF (Standard Mechanical Inter Face) pod may also be used. Further, the substrate W is distinguished between the above-described dummy substrate DW and the production substrate PW on which an electronic circuit is formed on the main surface. When the dummy substrate DW and the production substrate PW are not distinguished, it is called the substrate W.

[0054] The indexer robot IR moves the substrate W between the carrier C placed on the carrier placement shelf 47 and the inversion unit 53. The indexer robot IR includes a hand HD that holds the substrate W, an articulated arm 49 that moves the hand HD, and a lifting platform 51 that raises and lowers the hand HD.

[0055] The hand HD is movable to convey the substrate W. The hand HD is attached to the tip of the articulated arm 49. The articulated arm 49 is configured as a scalar type, for example. The articulated arm 49 moves the hand HD in the horizontal direction (XY direction). Also, the articulated arm 49 changes the orientation of the hand HD by rotating the hand HD around the vertical axis. The lifting platform 51 supports the base end of the articulated arm 49. The lifting platform 51 raises and lowers the hand HD in the vertical direction (Z direction) via the articulated arm 49. The articulated arm 49 and the lifting platform 51 include one or more electric motors as drive sources. Although the hand HD is moved by the articulated arm 49, the hand HD may be configured to be capable of moving forward and backward and rotating around the vertical axis.

[0056] (3-2) Configuration of the processing block The processing block 45 includes a center robot CR, an inversion unit 53, and two processing units 55A and 55B. The center robot CR is disposed in a conveyance area 57 extending in the X direction from the indexer robot IR. The inversion unit 53 inverts the front and back of the substrate W. The inversion unit 53 includes a pair of chucks 53A and 53B arranged along the Y direction. The inversion unit 53 holds the substrate W by sandwiching the periphery of the substrate W in the Y direction with the chucks 53A and 53B, and then rotates the chucks 53A and 53B holding the substrate W around an axis extending in the Y direction. The inversion unit 53 is disposed between the indexer robot IR and the center robot CR.

[0057] The center robot CR conveys the substrate W between the inversion unit 53 and the two processing units 55A and 55B. The center robot CR is configured in the same manner as the indexer robot IR.

[0058] (3-2-1) Configuration of the processing unit FIG. 6 is a side view showing the schematic configuration of the first processing unit 55A. FIG. 7 is a plan view thereof. Note that the second processing unit 55B shown in FIG. 5 may be configured in the same manner as the first processing unit 55A. Further, the second processing unit 55B may be configured differently from the first processing unit 55A.

[0059] The first processing unit 55A conditions the abrasive 89 and polishes the back surface of the production substrate PW. The first processing unit 55A includes a holding and rotating unit 61, a cleaning liquid supply unit 63, a rinsing liquid supply unit 65, and a back surface polishing mechanism 67. The holding and rotating unit 61 holds the substrate W and rotates the substrate W around the vertical axis AX5.

[0060] The holding and rotating unit 61 includes a spin chuck (mechanical chuck) 69 and a rotation driving unit 71. The rotation driving unit 71 includes an electric motor. The rotation driving unit 71 rotates the spin chuck 69 to rotate the substrate W held by the spin chuck 69 around the vertical axis AX5.

[0061] The spin chuck 69 includes a spin base 73 and three or more (for example, six) holding pins 75. The spin base 73 is formed in a disk shape. The vertical axis AX5 passes through the center of the spin base 69 (that is, the substrate W). As shown in FIG. 7, the six holding pins 75 are erected at equal intervals in a ring shape around the vertical axis AX5. Further, for example, three of the six holding pins 75, i.e., the holding pins 75A, rotate around the vertical axis passing through themselves. Thereby, the spin chuck 69 holds the substrate W by sandwiching the peripheral edge of the substrate W in the horizontal direction by the six holding pins 75. Note that the spin chuck 69 may be the spin chuck 3A (vacuum chuck) shown in FIG. 1 or an electrostatic chuck.

[0062] The cleaning liquid supply unit 63 includes a cleaning liquid nozzle 77, a cleaning liquid pipe 79, a cleaning liquid supply source 81, and an on-off valve V5. The cleaning liquid nozzle 77 discharges the cleaning liquid onto the substrate W held by the holding and rotating unit 61. As the cleaning liquid, for example, SC1 or pure water (e.g., DIW) is used. The cleaning liquid pipe 79 connects the cleaning liquid nozzle 77 and the cleaning liquid supply source 81. The cleaning liquid supply source 81 supplies the cleaning liquid to the cleaning liquid nozzle 77. The on-off valve V5 is provided in the cleaning liquid pipe 79.

[0063] The rinse liquid supply unit 65 includes a rinse liquid nozzle 83, a rinse liquid pipe 85, a rinse liquid supply source 87, and an on-off valve V6. The rinse liquid nozzle 83 discharges the rinse liquid onto the substrate DW held by the holding and rotating unit 61. As the rinse liquid, for example, pure water (e.g., DIW) is used. The rinse liquid pipe 85 connects the rinse liquid nozzle 83 and the rinse liquid supply source 87. The rinse liquid supply source 87 supplies the rinse liquid to the rinse liquid nozzle 83. The on-off valve V6 is provided in the rinse liquid pipe 85. Note that the cleaning liquid nozzle 77 and the rinse liquid nozzle 83 are fixed, but may be moved by a nozzle moving unit (not shown).

[0064] The back surface polishing mechanism 67 includes a polishing tool (polishing brush) 89, a shaft 91, an arm 93, and an electric motor 95. The polishing tool 89 has a resin body in which abrasive grains are dispersed. The polishing tool 89 has, for example, a resin body of PVA (polyvinyl alcohol) in which abrasive grains of silicon carbide (SiC) are dispersed. PVA is a thermosetting resin. The abrasive grains are not limited to silicon carbide, and for example, cerium oxide (CeO2), silica (SiO2), or diamond may be used. The resin is not limited to PVA, and for example, a phenolic resin may be used. The resin body may be sponge-like.

[0065] The upper end portion of the polishing tool 89 is attached to the lower end portion of a shaft 91 extending in the vertical direction. The upper portion of the shaft 91 is rotatably held around the vertical axis AX6 by an arm 93 extending in the horizontal direction. The shaft 91 is rotated around the vertical axis AX6 by an electric motor 95 via, for example, a belt or a gear. The polishing tool 89 and the shaft 91 are provided on the tip side of the arm 93.

[0066] The back surface grinding mechanism 67 further includes a lifting drive unit (linear actuator) 97 and a turning drive unit 98. The lifting drive unit 97 raises and lowers the grinding tool 89, the arm 93, etc. The lifting drive unit 97 includes a guide rail 101 and a drive unit 103. The base end portion of the arm 93 is supported by the guide rail 101 so as to be movable up and down. The guide rail 101 guides the arm 93 in the vertical direction. The drive unit 103 includes, for example, an electric motor and a screw shaft. Note that the drive unit 103 may be an air cylinder.

[0067] The turning drive unit 98 is provided outside the substrate W held by the holding and rotating unit 61. The turning drive unit 98 turns the grinding tool 89, the arm 93, the lifting drive unit 97, etc. around the vertical axis AX7. The turning drive unit 98 includes an electric motor. Note that the lifting drive unit 97 and the turning drive unit 98 correspond to the grinding tool moving mechanism of the present invention. The grinding tool moving mechanism moves the grinding tool 89.

[0068] (3-3) Configuration of the stocker Returning to FIG. 5, the production substrate processing apparatus 41 further includes a stocker 105. The stocker 105 includes a carrier storage shelf 107 and a carrier transfer robot 109. The carrier storage shelf 107 is provided on the outer wall 43A of the index block 43. The carrier storage shelf 107 is a shelf for storing the carrier C. A dummy substrate carrier CD is placed on the carrier storage shelf 107. The dummy substrate carrier CD is a carrier C that houses a conditioning dummy substrate DW. Note that the index robot IR cannot access the carrier C placed on the carrier storage shelf 107. Note that the dummy substrate carrier CD corresponds to the dummy substrate storage unit of the present invention.

[0069] The carrier transfer robot 109 transfers the carrier C between the two carrier placement shelves 47 and the carrier storage shelf 107. The carrier transfer robot 109 includes a movable gripping part 109A, an articulated arm 109B, a lifting platform 109C, and a Y-direction moving part 109D. The gripping part 109A grips the carrier C. The articulated arm 109B horizontally moves the gripping part 109A. The lifting platform 109C moves the gripping part 109A and the articulated arm 109B up and down. The Y-direction moving part 109D moves the gripping part 109A, the lifting platform 109C, etc. along a guide rail GR extending in the Y direction. The gripping part 109A, the articulated arm 109B, the lifting platform 109C, and the Y-direction moving part 109D each include one or more electric motors.

[0070] As shown in FIG. 5, for example, a rail 111 is provided above the two carrier placement shelves 47 and the carrier storage shelf 107. The external transfer mechanism OHT (Overhead Hoist Transport) moves along the rail 111 and transfers the carrier C to and from those shelves 47, 107. The external transfer mechanism OHT includes a gripping part (not shown) that grips the carrier C. This gripping part is lifted and lowered.

[0071] (3-4) Control Unit The production substrate processing apparatus 41 includes a control unit 121 and a storage unit (not shown). The control unit 121 controls the processing of the substrate W. The control unit 121 includes one or more processors such as a central processing unit (CPU) for example. The storage unit includes at least one of, for example, a ROM (Read-Only Memory), a RAM (Random-Access Memory), and a hard disk. The storage unit stores computer programs necessary for the control unit 121 to control each component of the production substrate processing apparatus 41. The storage unit stores a mode for conditioning the abrasive 89 and a mode for performing back grinding of the production substrate PW.

[0072] (4) Operations of the Production Substrate Processing Apparatus Next, the operation of the production substrate processing apparatus 41 will be described with reference to the flowchart of FIG. 8 and the like. In this embodiment, it is assumed that the dummy substrate carrier CD shown in FIG. 5 is placed on the carrier storage shelf 107. The polishing tool 89 of the back surface polishing mechanism 67 shown in FIG. 6 is replaced, and a new polishing tool 89 that has not been conditioned is attached to the shaft 91.

[0073] 〔Step S11〕Transport of the dummy substrate to the processing unit When conditioning the new polishing tool 89, the carrier transfer robot 109 transfers the dummy substrate carrier CD from the carrier storage shelf 107 to one of the two carrier placement shelves 47. Inside the dummy substrate carrier CD, the main surface of the dummy substrate DW faces upward, and its back surface faces downward. Also, this dummy substrate W is a silicon dummy substrate that has been chemically treated by the dummy substrate processing apparatus 1 and has a non-mirror surface (roughened surface) main surface. The non-mirror surface state is a state rougher than the mirror surface.

[0074] Thereafter, the indexer robot IR transfers the dummy substrate DW from the dummy substrate carrier CD placed on the carrier placement shelf 47 to the inversion unit 53. The inversion unit 53 does not invert the dummy substrate DW when conditioning the new polishing tool 89. Thereafter, the center robot CR transfers the dummy substrate DW from the inversion unit 53 to the holding and rotating unit 61 of the first processing unit 55A.

[0075] 〔Step S12〕Holding and rotation of the dummy substrate Thereafter, in FIGS. 6 and 7, the holding and rotating unit 61 holds the dummy substrate DW and rotates the dummy substrate DW around the vertical axis AX5. At this time, the non-mirror surface main surface of the dummy substrate DW faces upward, and the back surface faces downward.

[0076] 〔Step S13〕Conditioning Open the on-off valve V5. As a result, SC1 (cleaning liquid) is discharged from the cleaning liquid nozzle 77 onto the main surface of the dummy substrate DW. The SC1 on the main surface of the dummy substrate DW is spread over the entire main surface by rotation, and the excess liquid is scattered outside the dummy substrate DW. Further, the back grinding mechanism 67 performs conditioning of the grinding tool 89 by moving the grinding tool 89 between the center of the dummy substrate DW and the periphery of the dummy substrate DW while bringing the grinding tool 89 into contact with the main surface of the rotating dummy substrate DW.

[0077] Conditioning is an operation of shaving off excessive protrusions of abrasive grains contained in the resin body of the grinding tool 89 by bringing the polishing brush into contact with the dummy wafer. As shown in FIGS. 9(a) and 9(b), the abrasive grains have protrusions (corners). Note that the conditioning operation is also called aging.

[0078] The specific operation of the back grinding mechanism 67 will be described. As shown in FIG. 10, the back grinding mechanism 67 (lifting drive unit 97 and turning drive unit 98) moves the grinding tool 89 from the standby position P1 to the position P2 above the center of the dummy substrate DW. The electric motor 95 of the back grinding mechanism 67 rotates the grinding tool 89 around the vertical axis AX6. Then, with SC1 being discharged from the cleaning liquid nozzle 77 onto the main surface of the dummy substrate DW, the back grinding mechanism 67 lowers the grinding tool 89 from the upper position P2 to the center position P3. As a result, the lower surface of the grinding tool 89 comes into contact with the non-mirror surface main surface of the dummy substrate DW. The back grinding mechanism 67 presses the grinding tool 89 against the main surface of the dummy substrate DW with a preset pressure (for example, 200 mN).

[0079] Thereafter, the back grinding mechanism 67 moves the grinding tool 89 from the center position P3 to the peripheral position P4. Note that one movement of the grinding tool 89 from the center position P3 to the peripheral position P4 is one scan. Thereafter, the back grinding mechanism 67 raises the grinding tool 89 from the peripheral position P4 to the upper position P5 above it. Thereafter, the back grinding mechanism 67 repeats the movement of the grinding tool 89 in the order of the center upper position P2, the center position P3, the peripheral position P4, and the peripheral upper position P5 until a preset time elapses.

[0080] The conditioning of the abrasive tool 89 is performed on the non-mirror surface (rough surface) of the dummy substrate DW. Therefore, the time required for conditioning can be reduced to, for example, about 1 / 6 compared to the case where conditioning is performed on the mirror surface of a normal dummy substrate DW.

[0081] 〔Step S14〕Rinse and Dry After the movement (scan) of the abrasive tool 89 is performed until a preset time elapses, the back grinding mechanism 67 moves the abrasive tool 89 to the standby position P1. Also, the on-off valve V5 is closed, and the on-off valve V6 is opened. As a result, the discharge of SC1 from the cleaning liquid nozzle 77 stops, and pure water is discharged from the rinse liquid nozzle 83 onto the main surface of the dummy substrate DW. The pure water on the main surface of the dummy substrate DW is spread by rotation, and the SC1 on the main surface of the dummy substrate DW is replaced with pure water. Also, the excess pure water is scattered outside the dummy substrate DW by rotation.

[0082] Thereafter, the on-off valve V6 is closed to stop the discharge of pure water from the rinse liquid nozzle 83. Thereafter, the holding and rotating unit 61 rotates the dummy substrate DW held by the spin chuck 69 at a high speed to dry the dummy substrate DW. Thereafter, the holding and rotating unit 61 stops the rotation of the dummy substrate DW. Thereafter, the holding and rotating unit 61 releases the holding of the dummy substrate DW.

[0083] 〔Step S15〕Conveyance of the dummy substrate from the processing unit After conditioning the abrasive tool 89, the center robot CR conveys the dummy substrate DW from the holding and rotating unit 61 of the first processing unit 55A to the inversion unit 53. At this time, the main surface of the dummy substrate DW faces upward. Therefore, the inversion unit 53 does not invert the dummy substrate DW. The index robot IR conveys the dummy substrate DW from the inversion unit 53 to the dummy substrate carrier CD placed on the carrier placement shelf 47. Thereafter, the carrier transfer robot 109 transfers (returns) the dummy substrate carrier CD from the carrier placement shelf 47 to the carrier storage shelf 107. Thus, a series of operations for conditioning the abrasive tool 89 is completed.

[0084] [Step S21] Back grinding of the production substrate After conditioning the abrasive 89, that is, after a series of operations (Steps S11 to S15) for conditioning the abrasive 89 are performed, the back surface of the production substrate PW held by the holding and rotating unit 61 is ground using this abrasive 89. Next, the back grinding of the production substrate PW will be described.

[0085] For example, while the external transfer mechanism OHT moves along the guide rail 111, the external transfer mechanism OHT transfers the carrier C storing the production substrate PW to one of the two carrier placement shelves 47. Thereafter, the index robot IR transfers the production substrate PW from the carrier C placed on the carrier placement shelf 47 to the inversion unit 53. At this time, the main surface of the production substrate PW faces upward, and its back surface faces downward. Note that the main surface of the production substrate PW is the surface (device surface) on which the electronic circuit is formed.

[0086] The inversion unit 53 inverts the front and back of the production substrate PW. As a result, the back surface of the production substrate PW faces upward. The center robot CR transfers the production substrate PW from the inversion unit 53 to the holding and rotating unit 61 of the first processing unit 55A. Thereafter, the holding and rotating unit 61 holds the production substrate PW and rotates the production substrate PW around the vertical axis AX5. For example, the on-off valve V6 is opened, and pure water is discharged from the rinse liquid nozzle 83 onto the back surface of the rotating production substrate PW.

[0087] With pure water being discharged onto the back surface of the production substrate PW, the back surface polishing mechanism 67 brings the polishing tool 89 into contact with the back surface of the rotating production substrate PW. Also, while bringing the polishing tool 89 into contact with the back surface, the back surface polishing mechanism 67 moves the polishing tool 89 between the center and the periphery of the production substrate PW. The movement of the polishing tool 89 is performed in the same way as the movement of the conditioning polishing tool 89 shown in FIG. 10. Also, the polishing tool 89 is rotated around the vertical axis AX6. Since conditioning is being performed, the polishing tool 89 can suppress the occurrence of scratches on the back surface of the production substrate PW. Also, by polishing the back surface of the production substrate PW, dust that could not be removed by a conventional PVA sponge brush can be removed. Therefore, for example, the defocus problem in the EUV (Extreme Ultraviolet) exposure process can be solved.

[0088] After polishing the back surface of the production substrate PW, the back surface polishing mechanism 67 moves the polishing tool 89 to the standby position P1. Also, the on-off valve V6 is closed to stop the discharge of pure water from the rinse liquid nozzle 83. Thereafter, the holding and rotating unit 61 rotates the production substrate PW at high speed to dry the production substrate PW. Thereafter, after stopping the rotation of the production substrate PW, the holding and rotating unit 61 releases the holding of the production substrate PW.

[0089] Thereafter, the center robot CR conveys the production substrate PW from the holding and rotating unit 61 of the processing unit 55A to the inversion unit 53. The inversion unit 53 inverts the production substrate PW with the back surface facing upward so that the main surface (device surface) of the production substrate PW faces upward. Thereafter, the index robot IR conveys (returns) the production substrate PW from the inversion unit 53 to the carrier C placed on the carrier placement shelf 47. Thereafter, the external transfer mechanism OHT conveys the carrier C from the carrier placement shelf 47 to the next destination.

[0090] According to this embodiment, in order to condition the abrasive tool 89 having a resin body in which abrasive grains are dispersed, a silicon dummy substrate DW having a non-mirror-finish main surface is used. Since the non-mirror-finish main surface has a rougher surface than a mirror surface, the conditioning time can be shortened compared to a silicon dummy substrate having a mirror-finish main surface. Thereby, the time from when the abrasive tool 89 is replaced until the production substrate PW can be processed can be shortened. Therefore, the production efficiency can be improved.

[0091] FIG. 11 is a graph comparing a dummy substrate having a normal mirror-finish main surface (hereinafter referred to as a “normal mirror substrate” in this description) and a dummy substrate DW having a non-mirror-finish main surface (hereinafter referred to as a “non-mirror (rough) substrate” in this description). In FIG. 11, the horizontal axis represents the number of scans, that is, the total scan time. The vertical axis represents the number of scratches. The number of scratches indicates the numerical value counted as particles by a particle measuring device.

[0092] When the locations counted as particles by the particle measuring device are observed with an SEM (scanning electron microscope), about 90% were scratches. Therefore, it can be said that the locations counted as particles are almost scratches.

[0093] In FIG. 11, for example, it is assumed that a new abrasive tool 89 (a PVA resin body in which silicon carbide abrasive grains are dispersed) is brought into contact with a normal mirror substrate and a total of 400 scans are performed. In this case, after performing a certain polishing process on another new normal mirror substrate (substrate for particle evaluation) using the abrasive tool 89 after 400 scans have elapsed, the number of scratches (number of particles) is measured for the substrate for particle evaluation. The same applies to the non-mirror substrate.

[0094] As shown in FIG. 11, assume that when conditioning a new abrasive 89 using a normal mirror substrate, 1200 scans are performed and a predetermined number of scratches is measured. In contrast, when conditioning a new abrasive 89 using the non-mirror (rough) substrate DW of this embodiment, the predetermined number of scratches can be achieved in about 200 scans. That is, according to the non-mirror substrate DW of this embodiment, the conditioning of the abrasive 89 can be performed in about 1 / 6 of the time.

[0095] Further, the production substrate processing apparatus 41 includes a carrier CD for a dummy substrate that houses the dummy substrate DW, and an index robot IR and a center robot CR that transfer the dummy substrate DW. When conditioning the abrasive 89, the control unit 121 transfers the dummy substrate DW from the carrier CD for the dummy substrate to the holding and rotating unit 61 by the two robots IR and CR, and after conditioning the abrasive 89, transfers the dummy substrate DW from the holding and rotating unit 61 to the carrier CD for the dummy substrate by the two robots IR and CR.

[0096] When conditioning the abrasive 89, the dummy substrate DW can be taken out from the carrier CD for the dummy substrate, and after conditioning it, the dummy substrate DW can be returned to the carrier CD for the dummy substrate.

[0097] The production substrate processing apparatus 41 also includes a carrier C that houses the production substrate PW. After conditioning the abrasive 89, the control unit 121 transfers the production substrate PW from the carrier C to the holding and rotating unit 61 by the two robots IR and CR, and polishes the back surface of the production substrate PW held at the holding and rotating unit 61 using the abrasive 89. Using the conditioned abrasive 89, the back surface of the production substrate PW can be polished while suppressing scratches. Also, the tool that can shorten the time required for conditioning is the dummy substrate DW. Therefore, the two robots IR and CR can handle the dummy substrate DW in the same way as the production substrate PW.

[0098] The present invention is not limited to the above-described embodiments and can be implemented with the following modifications.

[0099] (1) In the above-described embodiments, the dummy substrate DW was held by the spin chuck 3A (holding and rotating unit 3) and rotated, and chemical solution treatment (surface roughening treatment) was performed on the main surface of the rotated dummy substrate DW by discharging the chemical solution onto the main surface. In this regard, for example, a chemical solution (e.g., ammonia water at room temperature) may be stored in a chemical solution tank, and a plurality of dummy substrates DW may be collectively immersed in the chemical solution stored in the chemical solution tank in a vertical posture for chemical solution treatment. That is, a plurality of dummy substrates DW may be batch-processed. Note that, during batch processing, a protective sheet may be attached to the back surface of each dummy substrate DW so that the back surface of each dummy substrate DW is not chemically solution-treated.

[0100] (2) In the above-described embodiments and modification (1), in FIG. 10, the polishing tool 89 was scanned from the center position P3 to the peripheral position P4. In this regard, the polishing tool 89 may be scanned from the peripheral position P4 to the center position P3. Further, the polishing tool 89 may be reciprocally scanned between the center position P3 and the peripheral position P4. The same applies to the brush 31.

[0101] (3) In the production substrate processing apparatus 41 of the above-described embodiments and each modification, the dummy substrate DW having a non-mirror-like main surface was housed in the dummy substrate carrier CD. At this time, the production substrate PW was not housed in the dummy substrate carrier CD. Further, the dummy substrate carrier CD was placed on the carrier storage shelf 107 of the stocker 105. For example, the dummy substrate DW may be housed in the carrier C together with the production substrate PW.

[0102] Further, the dummy substrate DW may be stored in a substrate storage unit 123 indicated by a dashed line inside the index block 43. When conditioning the abrasive 89, the index robot IR may take out the dummy substrate DW from the substrate storage unit 123. After the conditioning of the abrasive 89 is performed, the index robot IR may return the dummy substrate DW to the substrate storage unit 123. Note that the substrate storage unit 123 may be the carrier C.

[0103] (4) In the production substrate processing apparatus 41 of the above-described embodiments and each modification, the dummy substrate carrier CD storing the dummy substrate DW was placed on the carrier storage shelf 107. In this regard, the dummy substrate carrier CD may be transported by the external transfer mechanism OHT to one of the two carrier placement shelves 47.

[0104] (5) In the above-described embodiments and each modification, the production substrate processing apparatus 41 is provided separately from the dummy substrate processing apparatus 1. In this regard, the processing block 45 of the production substrate processing apparatus 41 may include the dummy substrate processing apparatus 1 as a processing unit. In this case, the control unit 121 also controls the dummy substrate processing apparatus 1. Further, the substrate processing apparatus of the present invention may include the dummy substrate processing apparatus 1 and the production substrate processing apparatus 41.

[0105] (6) In the above-described embodiments and each modification, the index robot IR and the center robot CR transported the dummy substrate DW between the dummy substrate carrier CD placed on the carrier placement shelf 47 and the holding and rotating unit 61. In this regard, either one of the index robot IR and the center robot CR may transport the dummy substrate DW between the dummy substrate carrier CD and the holding and rotating unit 61. In this case, the inversion unit 53 is arranged at a position that does not interfere with the transfer of the substrate W. Note that either one of the index robot IR and the center robot CR corresponds to the transfer robot of the present invention.

Explanation of Reference Numerals

[0106] 1... Substrate processing apparatus 3 … Rotating and Holding Unit 5 … Chemical Solution Supply Unit 13 … Chemical Solution Nozzle 37 … Control Unit 41 … Substrate Processing Apparatus for Production 55A … Processing Unit 61 … Rotating and Holding Unit 67 … Back Grinding Mechanism 89 … Grinding Tool 97 … Lifting Drive Unit 98 … Swiveling Drive Unit 121 … Control Unit 123 … Substrate Storage Unit IR … Indexer Robot CR … Center Robot W … Substrate DW …Dummy Substrate PW … Production Substrate C … Carrier CD … Carrier for Dummy Substrate AX1~AX3, AX5~AX7 … Vertical Axis

Claims

1. a substrate rotation step of holding a silicon dummy substrate having a non-mirror-finished main surface in a horizontal position and rotating the dummy substrate around a vertical axis; a conditioning step of conditioning the polishing tool by bringing a polishing tool having a resin body in which abrasive grains are dispersed into contact with the main surface of the rotating dummy substrate, A method for conditioning a polishing tool, characterized in that the non-mirror-finished main surface of the dummy substrate is formed by treating the main surface of the dummy substrate with a chemical solution.

2. 2. The method for conditioning an abrasive tool according to claim 1, A method for conditioning a polishing tool, characterized in that in the conditioning step, a cleaning liquid containing a chemical solution is discharged onto the main surface of the dummy substrate.

3. 2. The method for conditioning an abrasive tool according to claim 1, 2. A method for conditioning an abrasive tool, comprising the steps of:

4. The method for conditioning an abrasive tool according to any one of claims 1 to 3, The conditioning method for a polishing tool is characterized in that the conditioning step comprises conditioning the polishing tool by contacting the polishing tool with the main surface of the rotating dummy substrate while moving the polishing tool between the center of the dummy substrate and the peripheral edge of the dummy substrate.

5. A method for conditioning an abrasive tool according to any one of claims 1 to 3, a polishing step of polishing a back surface of a production substrate using the polishing tool that has been conditioned; A substrate processing method comprising:

6. a holding and rotating unit that holds a silicon dummy substrate having a non-mirror-finished main surface in a horizontal position and rotates the dummy substrate about a vertical axis; a polishing tool having a resin body in which abrasive grains are dispersed; a grinding tool moving mechanism for moving the grinding tool; a control unit that controls the processing of the substrate, the control unit brings the polishing tool into contact with the main surface of the dummy substrate that is being rotated by the holding and rotating unit by the polishing tool moving mechanism, and performs conditioning of the polishing tool; The substrate processing apparatus, wherein the non-mirror-finished main surface of the dummy substrate is formed by treating the main surface of the dummy substrate with a chemical solution.

7. 7. The substrate processing apparatus according to claim 6, a cleaning liquid nozzle that ejects a cleaning liquid onto the dummy substrate; a cleaning liquid supply unit that supplies the cleaning liquid to the cleaning liquid nozzle, The control unit further controls the cleaning liquid supply unit to cause a cleaning liquid containing a chemical solution to be ejected onto the dummy substrate through the cleaning nozzle when conditioning of the polishing tool is being performed.

8. 7. The substrate processing apparatus according to claim 6, The substrate processing apparatus according to claim 1, wherein the non-mirror surface is rougher than the mirror surface.

9. 7. The substrate processing apparatus according to claim 6, The substrate processing apparatus according to claim 1, wherein the non-mirror state is rougher than a rear surface of the dummy substrate, and the rear surface is rougher than a mirror surface.

10. 10. The substrate processing apparatus according to claim 6, a dummy substrate storage section for storing the dummy substrate; A transfer robot that transfers the dummy substrate, The control unit, when conditioning the polishing tool, causes the transport robot to transport the dummy substrate from the dummy substrate storage unit to the holding and rotating unit, and, after conditioning the polishing tool, causes the transport robot to transport the dummy substrate from the holding and rotating unit to the dummy substrate storage unit.

11. 11. The substrate processing apparatus according to claim 10, Further comprising a carrier for storing the production substrate; The control unit conditions the polishing tool, and then transports the production substrate from the carrier to the holding and rotating unit using the transport robot, and uses the polishing tool to polish the back surface of the production substrate held by the holding and rotating unit.

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