Multilayer type electronic component

Abstract

To provide a multilayer type electronic component in which a C0G characteristic with a high Q value is satisfied while minimizing equivalent series resistance.SOLUTION: The multilayer type electronic component includes: a main body 110 including a dielectric layer 111 and an internal electrode 121; and external electrodes 131 and 132 disposed on the main body. The dielectric layer includes (Cax, Sr1-x)(Zry, Ti1-y)O3 as a main component, and a first accessory component including a rare earth element containing at least one of yttrium (Y), dysprosium (Dy), and terbium (Tb), a second accessory component containing silicon (Si), and a third accessory component containing a valence variable acceptor element. A content of the rare earth element of the first accessory component is 1.0 mole or more and 2.0 mole or less per 100 mole of the main component.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present invention relates to a multilayer electronic component.

Background Art

[0002] A multilayer ceramic capacitor (MLCC), which is one type of multilayer electronic component, is a chip-type capacitor that is mounted on printed circuit boards of various electronic products such as video devices like liquid crystal display (LCD) devices and plasma display panel (PDP) panels, computers, smartphones, and mobile phones, and plays a role in charging or discharging electricity.

[0003] Such a multilayer ceramic capacitor can be used as a component of various electronic devices due to its advantages of being small in size while ensuring high capacitance and being easy to mount. As various electronic devices such as computers and mobile devices are miniaturized and have increased output power, the requirements for miniaturization and high capacitance of multilayer ceramic capacitors are increasing.

[0004] Such multilayer ceramic capacitors can be classified into Class I, which is a group of products used in circuits that require high reliability and stability as capacitors with high stability and low loss, and Class II, which is a group of products used for applications such as bypass and coupling as capacitors having high efficiency with a small volume.

[0005] Recently, the demand for products that satisfy the C0G characteristic with a high Q (Quality factor) value while minimizing the equivalent series resistance (ESR) in order to minimize power consumption among Class I products has been increasing.

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0007] One of several problems to be solved by the present invention is to provide a multilayer electronic component with a low equivalent series resistance (ESR).

[0008] One of several problems to be solved by the present invention is to provide a multilayer electronic component having a high Q value.

[0009] One of several problems to be solved by the present invention is to provide a multilayer electronic component that satisfies C0G characteristics.

[0010] However, several problems to be solved by the present invention are not limited to the above-described content, and can be more easily understood in the process of explaining specific embodiments of the present invention.

Means for Solving the Problems

[0011] A multilayer electronic component according to an embodiment of the present invention includes a main body including a dielectric layer and internal electrodes, and external electrodes disposed on the main body. The dielectric layer contains (Ca x , Sr 1-x )(Zr y , Ti 1-y )O 3 as a main component, and includes a first sub-component containing a rare earth element containing at least one of yttrium (Y), dysprosium (Dy), and terbium (Tb), a second sub-component containing silicon (Si), and a third sub-component containing a valence-variable acceptor element. The content of the rare earth element in the first sub-component can be 1.0 mol or more and 2.0 mol or less with respect to 100 mol of the main component.

[0012] A multilayer electronic component according to another embodiment of the present invention includes a main body including a dielectric layer and internal electrodes, and external electrodes disposed on the main body. The dielectric layer includes a main component and a sub-component having a perovskite structure represented by ABO 3 The A site of the perovskite structure includes calcium (Ca) and strontium (Sr), the B site of the perovskite structure includes zirconium (Zr) and titanium (Ti), and the sub-component includes a first sub-component including a rare earth element including at least one of yttrium (Y), dysprosium (Dy), and terbium (Tb), a second sub-component including silicon (Si), and a third sub-component including a variable valence acceptor element. The content of the rare earth element in the first sub-component can be 1.0 mol or more and 2.0 mol or less with respect to 100 mol of the B site of the perovskite structure.

Advantages of the Invention

[0013] One of the effects of the present invention is that the multilayer electronic component has a low equivalent series resistance (ESR).

[0014] One of the effects of the present invention is that the multilayer electronic component has a high Q value.

[0015] One of the effects of the present invention is that the multilayer electronic component satisfies the C0G characteristics.

[0016] However, the various and beneficial advantages and effects of the present invention are not limited to the above-described content and can be more easily understood in the process of describing the specific embodiments of the present invention.

Brief Description of the Drawings

[0017]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Mode for Carrying Out the Invention

[0018] Hereinafter, embodiments of the present invention will be described with reference to specific embodiments and the accompanying drawings. However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Also, the embodiments of the present invention are provided to more fully explain the present invention to an ordinary technician. Therefore, the shape, size, etc. of the elements in the drawings can be exaggerated for a clearer explanation, and the elements denoted by the same reference numerals in the drawings are the same elements.

[0019] And, in order to clearly explain the present invention in the drawings, parts not related to the explanation are omitted, and the sizes and thicknesses of each configuration shown in the drawings are arbitrarily shown for the convenience of explanation, so the present invention is not necessarily limited to what is shown in the drawings. In addition, for components having the same function within the scope of the same concept, the same reference numerals are used for explanation. Further, throughout the specification, when a certain part says that a certain component "includes", this means that other components can be further included, rather than excluding other components, unless otherwise stated to the contrary.

[0020] In the figure, the first direction can be defined as the stacking direction or the thickness T direction, the second direction as the length L direction, and the third direction as the width W direction.

[0021] Stacked electronic component FIG. 1 schematically shows a perspective view of a multilayer electronic component according to an embodiment of the present invention, FIG. 2 schematically shows an exploded perspective view showing a laminated structure of internal electrodes, FIG. 3 schematically shows a cross-sectional view taken along line I-I' of FIG. 1, and FIG. 4 schematically shows a cross-sectional view taken along line II-II' of FIG. 1.

[0022] Hereinafter, with reference to FIGS. 1 to 4, a multilayer electronic component according to an embodiment of the present invention will be described in detail. However, although a multilayer ceramic capacitor will be described as an example of the multilayer electronic component, the present invention can also be applied to various electronic products using a dielectric composition, such as an inductor, a piezoelectric element, a varistor, or a thermistor.

[0023] A multilayer electronic component 100 according to an embodiment of the present invention includes a main body 110 including a dielectric layer 111 and internal electrodes 121 and 122, and external electrodes 131 and 132 disposed on the main body 110. The dielectric layer 111 contains (Ca x , Sr 1-x )(Zr y , Ti 1-y )O 3 as a main component, and may contain a first sub-component containing at least one rare earth element selected from yttrium (Y), dysprosium (Dy), and terbium (Tb), a second sub-component containing silicon (Si), and a third sub-component containing variable valence acceptor elements.

[0024] Alternatively, a multilayer electronic component 100 according to another embodiment of the present invention includes a main body 110 including a dielectric layer 111 and internal electrodes 121 and 122, and external electrodes 131 and 132 disposed on the main body 110. The dielectric layer 111 is ABO 3It can include the main component and the sub-components of the perovskite structure represented by , where the A-site of the perovskite structure includes calcium (Ca) and strontium (Sr), the B-site of the perovskite structure includes zirconium (Zr) and titanium (Ti), and the sub-components include a first sub-component containing a rare earth element including at least one of yttrium (Y), dysprosium (Dy), and terbium (Tb), a second sub-component containing silicon (Si), and a third sub-component containing a valence-variable acceptor element.

[0025] The main body 110 may have a dielectric layer 111 and internal electrodes 121 and 122 laminated alternately.

[0026] More specifically, the main body 110 can include a capacitance-forming portion Ac that is disposed inside the main body 110 and includes a first internal electrode 121 and a second internal electrode 122 that are alternately disposed so as to face each other with the dielectric layer 111 interposed therebetween to form a capacitance.

[0027] There is no particular limitation on the specific shape of the main body 110. As shown in the figure, the main body 110 can be formed in a hexahedral shape or a shape similar thereto. Due to the shrinkage of the ceramic particles contained in the main body 110 during the firing process, the main body 110 does not have a perfect hexahedral shape with straight lines, but can have a substantially hexahedral shape.

[0028] The main body 110 can have a first surface 1 and a second surface 2 that face each other in a first direction, a third surface 3 and a fourth surface 4 that are connected to the first surface 1 and the second surface 2 and face each other in a second direction, and a fifth surface 5 and a sixth surface 6 that are connected to the first surface 1, the second surface 2, the third surface 3, and the fourth surface 4 and face each other in a third direction.

[0029] The plurality of dielectric layers 111 forming the main body 110 are in a fired state, and the boundary between adjacent dielectric layers 111 can be integrated to such an extent that it is difficult to confirm without using a Scanning Electron Microscope (SEM).

[0030] Recently, as the demand for products that satisfy the C0G characteristics with a high Q (Quality factor) value while minimizing the Equivalent Series Resistance (ESR) increases, it has become necessary to design an optimal composition ratio.

[0031] Here, the Q value can be expressed as Q = 1 / DF = (1 / ESR) * (1 / ωC) (where ω = 2πf), and it corresponds to the reciprocal of the Dissipation Factor (DF). On the other hand, the dissipation factor is also called the dielectric loss and can be expressed by the loss tangent (tanδ). The definition of the dielectric loss means the time rate at which electrical energy is converted into heat inside the dielectric when an electric field that changes over time is applied.

[0032] The C0G characteristics can mean the C0G characteristics defined by the EIA standard. Within the temperature range of -55°C to 125°C, the temperature coefficient α (10 -6 / K) of the capacitance change rate is 0, the multiplier of the temperature coefficient is -1, and the allowable error of the temperature coefficient can be equivalent to ±30 ppm. In other words, the C0G characteristics can mean satisfying 0 ± 30 ppm / °C within the temperature range of -55°C to 125°C.

[0033] The raw material for forming the dielectric layer 111 is not limited as long as sufficient capacitance can be obtained. Generally, perovskite (ABO 3 ) - based materials can be used. However, in order to satisfy the C0G characteristics, the dielectric layer 111 can contain (Ca x , Sr 1-x )(Zr y , Ti 1-y )O 3 (CSZT) as the main component, and can include a first sub - component containing rare - earth elements as a sub - component, a second sub - component containing silicon (Si), and a third sub - component containing a variable - valence acceptor element.

[0034] In addition, in order to satisfy the C0G characteristics, when the ratio of calcium (Ca) in the A site of the perovskite structure in the dielectric layer 111 is defined as x, the ratio of strontium (Sr) is 1 - x, the ratio of zirconium (Zr) in the B site of the perovskite structure is defined as y, and the ratio of titanium (Ti) is 1 - y, the dielectric layer 111 can include a first sub-component containing a rare earth element as a sub-component, a second sub-component containing silicon (Si), and a third sub-component containing a variable-valence acceptor element.

[0035] For the raw material for forming the dielectric layer 111, various ceramic additives, organic solvents, binders, dispersants, etc. can be added to the main component of CSZT according to the object of the present invention.

[0036] In the present invention, as an example of a more specific method for measuring the content of elements included in each component of the multilayer electronic component 100, in the case of the destructive method, the components can be analyzed using the EDS mode of a scanning electron microscope (SEM), the EDS mode of a transmission electron microscope (TEM), or the EDS mode of a scanning transmission electron microscope (STEM). First, among the cross-sections of the sintered dielectric material, a thin-sectioned analysis sample is prepared using a focused ion beam (FIB) equipment in a region containing a dielectric microstructure such as dielectric crystal grains. Then, the damaged layer on the surface of the thin-sectioned sample is removed using xenon (Xe) or argon (Ar) ion milling, and then, in the image obtained using SEM-EDS, TEM-EDS, or STEM-EDS, each component to be measured is mapped for qualitative / quantitative analysis. In this case, the qualitative / quantitative analysis graph of each component can also be expressed in terms of the mass percentage (wt%), atomic percentage (at%), or molar percentage (mol%) of each element. At this time, the molar number of one specific component with respect to the molar number of another specific component can be converted and expressed.

[0037] As yet another method, the chip is pulverized to select a region containing the dielectric microstructure, and the components of the region containing the dielectric microstructure thus selected are analyzed using an apparatus such as an inductively coupled plasma optical emission spectrometer (ICP-OES) or an inductively coupled plasma mass spectrometer (ICP-MS).

[0038] Here, x may satisfy 0.5 ≦ x < 1.0, y may satisfy 0.950 ≦ y < 1.00, preferably, x may satisfy 0.6 ≦ x ≦ 0.8, y may satisfy 0.960 ≦ y ≦ 0.980, and more preferably, x may be 0.7 and y may be 0.97.

[0039] Here, when x satisfies 0.5 ≦ x < 1.0 and y satisfies 0.950 ≦ y < 1.00, the C0G characteristics can be satisfied.

[0040] The sub-component may include a first sub-component containing rare earth elements.

[0041] The C0G material containing CSZT is different from the barium titanate (BaTiO 3 )-based dielectric material. The dielectric constant is realized by ion polarization rather than dipole polarization. Therefore, when a rare earth element is added to the C0G dielectric material, although the rare earth element can increase the interface resistance and can be improved in terms of reliability, when a part is substituted and solid-solved in the lattice, it acts as a defect that hinders ion polarization. Therefore, it has the opposite effect in terms of ion polarization, and the energy consumption required for realizing the dielectric constant increases, so the dielectric loss increases, and accordingly the Q value may also decrease.

[0042] Therefore, by adding the first sub-component, the reliability can be improved by controlling the grain growth of the dielectric crystal grains and making the size distribution uniform.

[0043] Here, the rare earth element can include at least one of yttrium (Y), dysprosium (Dy), and terbium (Tb).

[0044] At this time, the rare earth element content of the first sub-component may be 1.0 mol or more and 2.0 mol or less with respect to 100 mol of the CSZT main component, or may be 1.0 mol or more and 2.0 mol or less with respect to 100 mol of the B site of the perovskite structure.

[0045] Hereinafter, for convenience of explanation, the effect by the number of moles of the sub-component will be described based on the number of moles of the CSZT main component, but it is obvious to an ordinary technician that the number of moles of the sub-component can be similarly applied to the explanation with respect to the number of moles of the B site of the perovskite structure.

[0046] By satisfying that the rare earth element content of the first sub-component is 1.0 mol or more and 2.0 mol or less with respect to 100 mol of the CSZT main component, the reliability of the multilayer electronic component can be improved.

[0047] When the rare earth element content of the first sub-component is less than 1.0 mol with respect to 100 mol of the CSZT main component, there is a possibility that the reliability is not sufficient, and when the content of the first sub-component exceeds 2.0 mol with respect to 100 mol of the CSZT main component, there is a possibility that the Q value decreases.

[0048] Next, the sub-component can include a second sub-component containing silicon (Si).

[0049] The second sub-component serves as a sintering aid, and can serve to lower the sintering temperature and promote the sinterability by reacting with the main component or other sub-components.

[0050] The silicon (Si) content of the second sub-component may be 0.95 mol or more with respect to 100 mol of the CSZT main component, or may be 0.95 mol or more with respect to 100 mol of the B site of the perovskite structure.

[0051] By satisfying that the silicon (Si) content of the second sub-component is 0.95 mol or more with respect to 100 mol of the CSZT main component, the sintering density of the dielectric layer can be sufficiently realized. For example, the average sintering density of the dielectric layer can be realized to be 4.66 g / cm 3 or more.

[0052] The upper limit value of the silicon (Si) content of the second sub-component is not particularly limited in order to sufficiently realize the sintering density of the dielectric layer. For example, it may be 1.35 mol or less.

[0053] Here, the sintering density can mean the bulk density among the true density, the apparent density, and the bulk density, but is not particularly limited thereto, and can mean the true density or the apparent density. There may be almost no substantial difference in density values among the types of density.

[0054] The method for measuring the sintering density can be measured, for example, using the Archimedes method of the buoyancy method. More specifically, the density can be measured using an electronic mirror also serving as a hydrometer using the principle of Archimedes. When assuming the density of water to be 1, the bulk density, which is one of the sintering densities, can be calculated and obtained. Here, the bulk density can be expressed as {dry weight / (saturated weight - weight in water)}, the dry weight is the weight of the sample in a state not containing water, the weight in water is the weight measured by suspending the sample in water, and the saturated weight corresponds to the weight measured by wiping only the surface of the sample immersed in water.

[0055] As yet another method, a method of measuring the weight (g) of the sample, measuring the size in the first direction, the size in the second direction, and the size in the third direction of the sample, obtaining the volume, and calculating the density can be used, but it is not particularly limited to the above-described method.

[0056] Next, the sub-component can include a third sub-component including variable valence acceptor elements.

[0057] Here, the valence-variable acceptor element can include at least one of manganese (Mn), vanadium (V), chromium (Cr), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), and zinc (Zn), preferably can include manganese (Mn), but is not particularly limited thereto.

[0058] At this time, the content of the valence-variable acceptor element of the third sub-component may be 1.0 mol or more and 3.0 mol or less with respect to 100 mol of the above main component, or may be 1.0 mol or more and 3.0 mol or less with respect to 100 mol of the B-site of the perovskite structure.

[0059] The third sub-component can play a role in imparting reduction resistance, improving the densification of the dielectric fine structure, and maintaining a stable high-temperature accelerated life.

[0060] By satisfying that the content of the valence-variable acceptor element of the third sub-component is 1.0 mol or more and 3.0 mol or less with respect to 100 mol of the CSZT main component, the reliability of the multilayer electronic component can be improved.

[0061] When the content of the valence-variable acceptor element of the third sub-component is less than 1.0 mol with respect to 100 mol of the CSZT main component, the density may decrease and the reliability may not be sufficient. When the content of the third sub-component exceeds 3.0 mol with respect to 100 mol of the CSZT main component, there is a risk of inferior high-temperature accelerated life.

[0062] On the other hand, the fine structure of the dielectric layer 111 of the multilayer electronic component can include a dielectric grain boundary disposed between adjacent dielectric grains.

[0063] In order to improve the reliability of the C0G characteristic dielectric material, it is necessary to increase the fraction of the dielectric grain boundary (grain boundary) and ensure a relatively large number of dielectric grain boundaries to prevent a decrease in insulation resistance.

[0064] When comparing the resistance inside the dielectric microstructure, it is known that the resistance value of the grain boundaries is relatively larger than that of the grain interiors.

[0065] Thus, the reason why the resistance value of the grain boundaries is larger than that of the grain interiors can be explained by the Schottky barrier model in the interface region. Generally, in the vicinity adjacent to the grain boundaries, a space charge layer, that is, a depletion layer, with a high concentration of ions or electrons is formed. However, when a specific element is distributed at a high concentration in the grain boundaries, the Fermi level rises, thereby increasing the height of the Schottky barrier and enabling the depletion layer to become larger.

[0066] Therefore, the tunneling phenomenon of charge carriers due to thermionic activation is suppressed, and thus an effect of improving reliability can be expected.

[0067] In the present invention, when presenting the composition and content of the main component and the first to third sub-components, which are dielectric substances, improvement in reliability can be expected by reducing the charge density during solid solution in CSZT or grain boundary segregation, or by increasing the fraction of grain boundaries.

[0068] The thickness td of the dielectric layer 111 does not particularly need to be limited.

[0069] In order to ensure the reliability of the multilayer electronic component 100 under high voltage environments, the thickness of the dielectric layer 111 can be 10.0 μm or less. Also, in order to achieve miniaturization and high capacitance of the multilayer electronic component 100, the thickness of the dielectric layer 111 may be 3.0 μm or less. In order to more easily achieve ultra-miniaturization and high capacitance, the thickness of the dielectric layer 111 may be 1.0 μm or less, preferably 0.6 μm or less, and more preferably 0.4 μm or less.

[0070] Here, the thickness td of the dielectric layer 111 can mean the thickness td of the dielectric layer 111 disposed between the first internal electrode 121 and the second internal electrode 122.

[0071] On the other hand, the thickness td of the dielectric layer 111 can mean the size of the dielectric layer 111 in the first direction. Also, the thickness td of the dielectric layer 111 can mean the average thickness td of the dielectric layer 111, and can mean the average size of the dielectric layer 111 in the first direction.

[0072] The average size of the dielectric layer 111 in the first direction can be measured by scanning an image of the cross-section of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the average size of one dielectric layer 111 in the first direction can mean the average value calculated by measuring the size in the first direction at 10 equally spaced points in the second direction for one dielectric layer 111 in the scanned image. The 10 equally spaced points can be specified in the capacitance forming portion Ac. Also, when the measurement of such an average value is extended to 10 dielectric layers 111 to measure the average value, the average size of the dielectric layer 111 in the first direction can be further generalized.

[0073] The internal electrodes 121 and 122 may be alternately laminated with the dielectric layer 111.

[0074] The internal electrodes 121 and 122 can include a first internal electrode 121 and a second internal electrode 122, and the first internal electrode 121 and the second internal electrode 122 are alternately arranged so as to face each other with the dielectric layer 111 constituting the main body 110 interposed therebetween, and can be exposed to the third surface 3 and the fourth surface 4 of the main body 110, respectively.

[0075] More specifically, the first internal electrode 121 can be spaced apart from the fourth surface 4 and exposed through the third surface 3, and the second internal electrode 122 can be spaced apart from the third surface 3 and exposed through the fourth surface 4. A first external electrode 131 can be disposed on the third surface 3 of the main body 110 and connected to the first internal electrode 121, and a second external electrode 132 can be disposed on the fourth surface 4 of the main body 110 and connected to the second internal electrode 122.

[0076] That is, the first internal electrode 121 can be connected to the first external electrode 131 without being connected to the second external electrode 132, and the second internal electrode 122 can be connected to the second external electrode 132 without being connected to the first external electrode 131. At this time, the first internal electrode 121 and the second internal electrode 122 can be electrically separated from each other by the dielectric layer 111 disposed therebetween.

[0077] On the other hand, the main body 110 can be formed by alternately laminating a ceramic green sheet printed with the first internal electrode 121 and a ceramic green sheet printed with the second internal electrode 122 and then firing them.

[0078] The material for forming the internal electrodes 121 and 122 is not particularly limited, and a material having excellent electrical conductivity can be used. For example, the internal electrodes 121 and 122 can include one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0079] Further, the internal electrodes 121 and 122 can be formed by printing a conductive paste for internal electrodes containing one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof on a ceramic green sheet. As the printing method of the conductive paste for internal electrodes, a screen printing method, a gravure printing method, or the like can be used, but the present invention is not limited thereto.

[0080] On the other hand, the thickness te of the internal electrodes 121 and 122 does not particularly need to be limited.

[0081] In order to ensure the reliability of the multilayer electronic component 100 in a high voltage environment, the thickness te of the internal electrodes 121 and 122 can be 3.0 μm or less. Further, in order to achieve miniaturization and high capacitance of the multilayer electronic component 100, the thickness of the internal electrodes 121 and 122 may be 1.0 μm or less. In order to more easily achieve ultra-miniaturization and high capacitance, the thickness of the internal electrodes 121 and 122 may be 0.6 μm or less, and more preferably 0.4 μm or less.

[0082] Here, the thickness te of the internal electrodes 121 and 122 can mean the size of the internal electrodes 121 and 122 in the first direction. Further, the thickness te of the internal electrodes 121 and 122 can mean the average thickness te of the internal electrodes 121 and 122, and can mean the average size of the internal electrodes 121 and 122 in the first direction.

[0083] The average size of the internal electrodes 121 and 122 in the first direction can be measured by scanning an image of the cross-section of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the average size of one internal electrode in the first direction can be the average value calculated by measuring the size of one internal electrode in the first direction at 10 equally spaced points in the second direction in the scanned image. The 10 equally spaced points can be specified in the capacitance forming portion Ac. Further, when the measurement of such an average value is extended to 10 internal electrodes to measure the average value, the average size of the internal electrodes in the first direction can be further generalized.

[0084] On the other hand, in one embodiment of the present invention, the average thickness td of at least one of the plurality of dielectric layers 111 and the average thickness te of at least one of the plurality of internal electrodes 121 and 122 can satisfy 2×te < td.

[0085] In other words, the average thickness td of one of the dielectric layers 111 may be even greater than twice the average thickness te of one of the internal electrodes 121 and 122. Preferably, the average thickness td of the plurality of dielectric layers 111 may be even greater than twice the average thickness te of the plurality of internal electrodes 121 and 122.

[0086] Generally, for electronic components for high-voltage electrical equipment, the main issue is the reliability problem due to the decrease in the breakdown voltage (BDV) in a high-voltage environment.

[0087] Therefore, in order to prevent the decrease in the breakdown voltage in a high-voltage environment, by making the average thickness td of the dielectric layer 111 greater than twice the average thickness te of the internal electrodes 121 and 122, the thickness of the dielectric layer, which is the distance between the internal electrodes, can be increased, and the breakdown voltage characteristics can be improved.

[0088] When the average thickness td of the dielectric layer 111 is equal to or less than twice the average thickness te of the internal electrodes 121 and 122, the average thickness of the dielectric layer, which is the distance between the internal electrodes, becomes thin, and the breakdown voltage may decrease, and there is a possibility that a short circuit may occur between the internal electrodes.

[0089] On the other hand, the main body 110 can include cover portions 112 and 113 disposed on both end surfaces in the first direction of the capacitance forming portion Ac.

[0090] Specifically, it can include a first cover portion 112 disposed on one surface in the first direction of the capacitance forming portion Ac and a second cover portion 113 disposed on the other surface in the first direction of the capacitance forming portion Ac. More specifically, it can include an upper cover portion 112 disposed on the upper portion in the first direction of the capacitance forming portion Ac and a lower cover portion 113 disposed on the lower portion in the first direction of the capacitance forming portion Ac.

[0091] The upper cover portion 112 and the lower cover portion 113 can be formed by laminating a single dielectric layer 111 or two or more dielectric layers 111 in the first direction on the upper and lower surfaces of the capacitance forming portion Ac, and can basically play a role of preventing damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0092] The upper cover portion 112 and the lower cover portion 113 do not include the internal electrodes 121 and 122 and can include the same material as the dielectric layer 111. That is, the upper cover portion 112 and the lower cover portion 113 can include a ceramic material. For example, they can include a barium titanate (BaTiO 3 )-based ceramic material.

[0093] On the other hand, the thickness tc of the cover portions 112 and 113 does not need to be particularly limited.

[0094] However, in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component, the thickness tc of the cover portions 112 and 113 may be 100 μm or less, preferably 30 μm or less, and in the case of ultra-small products, more preferably 20 μm or less.

[0095] Here, the thickness tc of the cover parts 112 and 113 can represent the size of the cover parts 112 and 113 in the first direction. Note that the thickness tc of the cover parts 112 and 113 represents the average thickness tc of the cover parts 112 and 113, and can represent the average size of the cover parts 112 and 113 in the first direction.

[0096] The average size of the cover parts 112 and 113 in the first direction can be measured by scanning and imaging the cross-sections of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, in the image of scanning one cover part, it can represent the average value calculated by measuring the size in the first direction at 10 equally spaced points in the second direction.

[0097] Note that the average size of the cover part in the first direction measured by the above method can have substantially the same size as the average size of the cover part in the first direction in the cross-sections of the main body 110 in the first and third directions.

[0098] On the other hand, the stacked electronic component 100 can include side margin parts 114 and 115 arranged on both end-surfaces of the main body 110 in the third direction.

[0099] More specifically, the side margin parts 114 and 115 can include a first side margin part 114 arranged on the fifth surface 5 of the main body 110 and a second side margin part 115 arranged on the sixth surface 6 of the main body 110.

[0100] As shown in the figure, the side margin parts 114 and 115 can represent the region between the boundary surface of the main body 110 and the end-surfaces in the third direction of the first internal electrode 121 and the second internal electrode 122, based on the cross-sections of the main body 110 in the first and third directions.

[0101] The side margin portions 114 and 115 are formed by applying a conductive paste to form the internal electrodes 121 and 122 except for the locations where the side margin portions 114 and 115 are formed on the ceramic green sheet applied to the capacitance forming portion Ac. In order to suppress the step caused by the internal electrodes 121 and 122, after cutting so that the internal electrodes 121 and 122 after lamination are exposed on the fifth surface 5 and the sixth surface 6 of the main body 110, a single dielectric layer 111 or two or more dielectric layers 111 can also be formed by laminating in the third direction on both end - surfaces in the third direction of the capacitance forming portion Ac.

[0102] The side margin portions 114 and 115 can basically play a role in preventing damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0103] The first side margin portion 114 and the second side margin portion 115 do not include the internal electrodes 121 and 122 and can contain the same material as the dielectric layer 111. That is, the first side margin portion 114 and the second side margin portion 115 can contain a ceramic material. For example, they can contain a barium titanate (BaTiO 3 ) - based ceramic material.

[0104] On the other hand, the width wm of the first side margin portion 114 and the second side margin portion 115 does not need to be particularly limited.

[0105] However, in order to more easily achieve miniaturization and high - capacitance of the multilayer electronic component 100, the width wm of the side margin portions 114 and 115 may be 100 μm or less, preferably 30 μm or less, and in the case of ultra - small products, more preferably 20 μm or less.

[0106] Here, the width wm of the side margin portions 114 and 115 can mean the size of the side margin portions 114 and 115 in the third direction. Also, the width wm of the side margin portions 114 and 115 can mean the average width wm of the side margin portions 114 and 115, and can mean the average size of the side margin portions 114 and 115 in the third direction.

[0107] The average size of the side margin portions 114 and 115 in the third direction can be measured by scanning an image of the cross-section of the main body 110 in the first and third directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, in an image obtained by scanning one side margin portion, it can mean the average value calculated by measuring the size in the third direction at 10 points equally spaced in the first direction.

[0108] In one embodiment of the present invention, a structure in which the stacked electronic component 100 has two external electrodes 131 and 132 is described. However, the number, shape, etc. of the external electrodes 131 and 132 can be changed according to the form of the internal electrodes 121 and 122 and other purposes.

[0109] The external electrodes 131 and 132 are arranged on the main body 110 and can be connected to the internal electrodes 121 and 122.

[0110] More specifically, the external electrodes 131 and 132 can include a first external electrode 131 and a second external electrode 132 that are respectively arranged on the third surface 3 and the fourth surface 4 of the main body 110 and are respectively connected to the first internal electrode 121 and the second internal electrode 122. That is, the first external electrode 131 can be arranged on the third surface 3 of the main body and connected to the first internal electrode 121, and the second external electrode 132 can be arranged on the fourth surface 4 of the main body and connected to the second internal electrode 122.

[0111] In addition, the external electrodes 131 and 132 can be arranged to extend to a part on the first surface 1 and the second surface 2 of the main body 110, or can be arranged to extend to a part on the fifth surface 5 and the sixth surface 6 of the main body 110. That is, the first external electrode 131 can be arranged on a part of the first surface 1, the second surface 2, the fifth surface 5, and the sixth surface 6 of the main body 110, and on the third surface 3 of the main body 110, and the second external electrode 132 can be arranged on a part of the first surface 1, the second surface 2, the fifth surface 5, and the sixth surface 6 of the main body 110, and on the third surface 3 of the main body 110.

[0112] On the one hand, the external electrodes 131 and 132 may be formed of any material as long as it has electrical conductivity such as metal, etc., and specific materials may be determined in consideration of electrical characteristics, structural stability, etc., and may further have a multilayer structure.

[0113] For example, the external electrodes 131 and 132 can include an electrode layer disposed on the main body 110 and a plating layer disposed on the electrode layer.

[0114] As a more specific example of the electrode layer, the electrode layer can include a first electrode layer 131a and 132a which are fired electrodes containing a first conductive metal and glass, or a second electrode layer 131b and 132b which are resin-based electrodes containing a second conductive metal and resin.

[0115] Here, the conductive metal contained in the first electrode layers 131a and 132a can be called the first conductive metal, and the conductive metal contained in the second electrode layers 131b and 132b can be called the second conductive metal. At this time, the first conductive metal and the second conductive metal may be the same as or different from each other. When including a plurality of conductive metals, only a part may contain the same conductive metal, but it is not particularly limited thereto.

[0116] Note that the electrode layers 131a, 132a, 131b, and 132b may be in a form in which a fired electrode and a resin-based electrode are sequentially formed on the main body 110.

[0117] Also, the electrode layers 131a, 132a, 131b, and 132b may be formed by a method of transferring a sheet containing a conductive metal onto the main body, or may be formed by a method of transferring a sheet containing a conductive metal onto a fired electrode.

[0118] As the conductive metal contained in the electrode layers 131a, 132a, 131b, and 132b, a material with excellent electrical conductivity can be used. For example, the conductive metal can include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, but is not particularly limited thereto.

[0119] In one embodiment of the present invention, the electrode layers 131a, 132a, 131b, and 132b can have a two-layer structure including a first electrode layer 131a, 132a and a second electrode layer 131b, 132b. Thereby, the external electrodes 131 and 132 can include the first electrode layers 131a and 132a including a first conductive metal and glass, and the second electrode layers 131b and 132b disposed on the first electrode layers 131a and 132a and including a second conductive metal and a resin.

[0120] The first electrode layers 131a and 132a can play a role of improving the bonding property with the main body 110 by including glass, and the second electrode layers 131b and 132b can play a role of improving the bending strength by including resin.

[0121] The first conductive metal contained in the first electrode layers 131a and 132a is not particularly limited as long as it can be electrically connected to the internal electrodes 121 and 122 for forming capacitance. For example, it can include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0122] The first electrode layers 131a and 132a can be formed by applying a conductive paste provided by adding glass frit to first conductive metal particles and then firing.

[0123] The second conductive metal contained in the second electrode layers 131b and 132b can serve to be electrically connected to the first electrode layers 131a and 132a.

[0124] The conductive metal contained in the second electrode layers 131b and 132b is not particularly limited as long as it can be electrically connected to the electrode layers 131a and 132a, and can include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0125] The second conductive metal contained in the second electrode layers 131b and 132b can include one or more of spherical particles and flake-shaped particles. That is, the conductive metal can consist of only flake-shaped particles, or only spherical particles, or may be in a form in which flake-shaped particles and spherical particles are mixed. Here, the spherical particles can also include forms that are not completely spherical. For example, forms having a length ratio of the major axis to the minor axis (major axis / minor axis) of 1.45 or less can be included. The flake-shaped particles mean particles having a flat and elongated form, and are not particularly limited. For example, the length ratio of the major axis to the minor axis (major axis / minor axis) may be 1.95 or more. The lengths of the major axis and the minor axis of the above spherical particles and flake-shaped particles can be measured from an image obtained by scanning the cross-sections in the first direction and the second direction cut at the central part in the third direction of the multilayer electronic component with a scanning electron microscope (SEM).

[0126] The resin contained in the second electrode layers 131b and 132b can serve to ensure bondability and absorb shock. The resin contained in the second electrode layers 131b and 132b has bondability and shock absorbability, and is not particularly limited as long as it can be mixed with the second conductive metal particles to form a paste. For example, it can include an epoxy resin.

[0127] In addition, the second electrode layers 131b and 132b can contain a plurality of metal particles, intermetallic compounds, and resin. By including intermetallic compounds, the electrical connectivity with the first electrode layers 131a and 132a can be further improved. The intermetallic compounds play a role in connecting a plurality of metal particles to improve electrical connectivity and can also play a role in surrounding and connecting the plurality of metal particles to each other.

[0128] At this time, the intermetallic compound can contain a metal having a melting point lower than the curing temperature of the resin. That is, since the intermetallic compound contains a metal having a melting point lower than the curing temperature of the resin, the metal having a melting point lower than the curing temperature of the resin melts during the drying and curing processes, forms a part of the metal particles and the intermetallic compound, and comes to surround the metal particles. At this time, the intermetallic compound can preferably contain a low melting point metal of 300°C or lower.

[0129] For example, it can contain Sn having a melting point of 213 to 220°C. During the drying and curing processes, Sn melts, and the melted Sn wets high melting point metal particles such as Ag, Ni, or Cu by capillary action, reacts with a part of the Ag, Ni, or Cu metal particles, and 3 Sn, Ni 3 Sn 4 , Cu 6 Sn 5 , Cu 3 forms intermetallic compounds such as Sn, Ni, Cu, etc. Ag, Ni, or Cu that did not participate in the reaction remains in the form of metal particles.

[0130] Therefore, the plurality of metal particles contain one or more of Ag, Ni, and Cu, and the intermetallic compound can contain one or more of Ag 3 Sn, Ni 3 Sn 4 , Cu 6 Sn 5 and Cu 3 Sn.

[0131] The plating layers 131c and 132c can play a role in improving the mounting characteristics.

[0132] The types of the plating layers 131c and 132c are not particularly limited, and may be single-layer plating layers 131c and 132c containing one or more of nickel (Ni), tin (Sn), palladium (Pd), and alloys thereof, or may be formed of a plurality of layers.

[0133] As more specific examples of the plating layers 131c and 132c, the plating layers 131c and 132c may be Ni plating layers or Sn plating layers, or may be in a form in which a Ni plating layer and an Sn plating layer are sequentially formed on the electrode layer, or may be in a form in which an Sn plating layer, a Ni plating layer, and an Sn plating layer are sequentially formed. Further, the plating layers 131c and 132c may include a plurality of Ni plating layers and / or a plurality of Sn plating layers.

[0134] The size of the stacked electronic component 100 does not need to be particularly limited.

[0135] However, in order to simultaneously achieve miniaturization and high capacity, the thicknesses of the dielectric layer and the internal electrodes need to be reduced and the number of stacked layers needs to be increased. Therefore, the effects according to the present invention can be more remarkable in the stacked electronic component 100 having a size of 3216 (length × width: 3.2 mm × 1.6 mm) or less.

[0136] Hereinafter, the present invention will be described in more detail through examples, which are for helping a specific understanding of the present invention, and the scope of the present invention is not limited by the examples.

[0137] (Test Example) The following [Table 1] shows the measurement of the Q value according to the type and content of the rare earth element which is the first sub-component.

[0138] In each test example, the main component and other sub-components were added in the same manner, except that the types and contents of the rare earth element which is the first sub-component were applied differently. The contents of the first to third sub-components were added based on 100 moles of the main component.

[0139] The main component is a dielectric material (Ca x , Sr 1-x )(Zr y , Ti 1-y )O 3 (CSZT) was used (where x = 0.7, y = 0.97). As the second sub-component, silicon (Si) was added in an amount of 0.95 mol or more per 100 mol of the CSZT main component, and as the third sub-component, manganese (Mn) was added in an amount of 2.0 mol per 100 mol of the CSZT main component.

[0140] In Test Examples 1-1 to 1-4, 0.5 mol, 1.0 mol, 2.0 mol, and 2.6 mol of yttrium (Y) were added per 100 mol of the CSZT main component, respectively. In Test Examples 2-1 to 2-4, 0.5 mol, 1.0 mol, 2.0 mol, and 2.6 mol of dysprosium (Dy) were added per 100 mol of the CSZT main component, respectively. In Test Examples 3-1 to 3-4, 0.5 mol, 1.0 mol, 2.0 mol, and 2.6 mol of terbium were added per 100 mol of the CSZT main component, respectively.

[0141] After measuring the Q value of the fabricated sample chip (chip), when the Q value was 10,000 or more, it was evaluated as good and described as "O", and when the Q value was less than 10,000, it was evaluated as bad and described as "X". The Q value was measured using the Keithley 4268A, which is an LCR meter measurement equipment.

[0142]

Table 1

[0143] In the case of Test Examples 1-4, 2-4, and 3-4, where the content of the rare earth element corresponds to 2.6 mol exceeding 2.0 mol, the Q value was measured to be less than 10,000, indicating that the dielectric loss is large. On the other hand, in the case of Test Examples 1-1 to 1-3, Test Examples 2-1 to 2-3, and Test Examples 3-1 to 3-3, where the content of the rare earth element corresponds to 2.0 mol or less, the Q value was measured to be 10,000 or more, indicating that the dielectric loss is small.

[0144] Thus, when the content of the rare earth element is 2.0 mol or less with respect to 100 mol of the CSZT main component, it can be seen that the Q value does not decrease and the dielectric loss is small.

[0145] Next, (a) of FIG. 5 is the STEP-IR graph of Test Example 1-1, (b) of FIG. 5 is the STEP-IR graph of Test Example 1-2, and (c) of FIG. 5 is the STEP-IR graph of Test Example 1-3.

[0146] (a) of FIG. 6 is the STEP-IR graph of Test Example 2-1, (b) of FIG. 6 is the STEP-IR graph of Test Example 2-2, and (c) of FIG. 6 is the STEP-IR graph of Test Example 2-3.

[0147] The STEP-IR evaluation discriminates whether a short circuit occurs in the chip under severe conditions where the voltage is increased by 10 V per 5 minutes at a temperature condition of 150°C, and it can be seen that the reliability is excellent or inferior according to the Mean Time To Failure (MTTF).

[0148] In the case of Test Examples 1-1 and 2-1 corresponding to 0.5 mol where the content of the rare earth element is less than 1.0 mol, since the Mean Time To Failure (MTTF), which is the time when a short circuit occurs in the chip, is short within a relatively short time, it can be seen that the reliability is inferior under severe conditions. On the other hand, in the case of Test Examples 1-2, 1-3, 2-2, and 2-3 corresponding to 1.0 mol or more and 2.0 mol or less of the rare earth element content, compared with Test Examples 1-1 and 2-1, since the Mean Time To Failure (MTTF), which is the time when a short circuit occurs in the chip, has increased, it can be seen that the reliability is excellent even under severe conditions.

[0149] Thus, when the content of the rare earth element is 1.0 mol or more and 2.0 mol or less with respect to 100 mol of the CSZT main component, it can be seen that the reliability is excellent.

[0150] From Test Examples 1-1 to 1-3, Test Examples 2-1 to 2-3, and Test Examples 3-1 to 3-3, it was found that when the content of the rare earth element was 1.0 mol or more and 2.0 mol or less per 100 mol of the CSZT main component, the Q value was excellent and the reliability was also improved. Thus, it can be seen that both the High-Q characteristics and reliability required in the C0G material can be ensured.

[0151] The following [Table 2] shows the sintered density of the sample chips according to the content of the rare earth element as the first sub-component and the content of silicon (Si) as the second sub-component.

[0152] Each test example was applied with the same addition of the main component and the third sub-component, except that the content of the rare earth element as the first sub-component and the content of silicon (Si) as the second sub-component were varied. The contents of the first to third sub-components were added based on 100 mol of the main component.

[0153] The main component is a dielectric material (Ca x , Sr 1-x )(Zr y , Ti 1-y )O 3 (CSZT) was used (where x = 0.7, y = 0.97), and as the third sub-component, 2.0 mol of manganese (Mn) was added per 100 mol of the CSZT main component.

[0154] In Test Examples 4-1 to 4-4, 1.0 mol of yttrium (Y) was added per 100 mol of the CSZT main component, and 0.75 mol, 0.95 mol, 1.15 mol, and 1.35 mol of silicon (Si) were added per 100 mol of the CSZT main component, respectively.

[0155] In Test Examples 5-1 to 5-4, 2.0 mol of yttrium (Y) was added per 100 mol of the CSZT main component, and 0.75 mol, 0.95 mol, 1.15 mol, and 1.35 mol of silicon (Si) were added per 100 mol of the CSZT main component, respectively.

[0156] Regarding the fabricated sample chips, the average sintered density value (g / cm 3After measuring 3 the density of 4.56 g / cm 3 which corresponds to 95% or more of the theoretical density of the CSZT dielectric material, it was evaluated as good and marked as "O". If it was less than 4.56 g / cm 3 it was evaluated as defective and marked as "X".

[0157]

Table 2

[0158] In the case of Test Examples 4-1 and 5-1 where the content of silicon (Si) corresponds to 0.75 mol under the condition that the content of rare earth elements satisfies 1.0 mol or more and 2.0 mol or less, the average sintered density values were measured as 4.53 g / cm 3 and 4.52 g / cm 3 respectively. From this, it can be predicted that the sintered density is not excellent, the density of the dielectric microstructure is inferior, and the dielectric loss is large. On the other hand, in the case of Test Examples 4-2 to 4-4 and Test Examples 5-2 to 5-4 where the content of silicon (Si) is 0.95 mol or more under the condition that the content of rare earth elements satisfies 1.0 mol or more and 2.0 mol or less, the average sintered density value was measured as 4.66 g / cm 3 From this, it can be predicted that the sintered density is excellent, the density of the dielectric microstructure is excellent, and the dielectric loss is small.

[0159] Thus, it can be predicted that when the content of silicon (Si) is 0.95 mol or more with respect to 100 mol of the CSZT main component, the average sintered density value is excellent and the dielectric loss is small, and it can be predicted that the High-Q characteristics required in the C0G material can be ensured.

[0160] ​As described above, the embodiments of the present invention have been described in detail. However, the present invention is not limited by the above-described embodiments and the attached drawings, but is limited by the attached claims. Therefore, within the scope not departing from the technical idea of the present invention described in the claims, various forms of substitution, modification, and change are possible by those having ordinary knowledge in the technical field, and it can be said that these also belong to the scope of the present invention.

[0161] In addition, the expression "one embodiment" used in the present invention does not mean the same embodiment, but is provided to emphasize and explain each different unique feature. However, it does not exclude that the above-presented one embodiment is realized in combination with the features of another one embodiment. For example, even if the matter described in a specific one embodiment is not described in another one embodiment, it can be understood as an explanation related to another one embodiment as long as there is no explanation contrary to or conflicting with that matter in another one embodiment.

[0162] The terms used in the present invention are merely used to explain one embodiment and are not intended to limit the present invention. At this time, the singular expression includes the plural expression unless the context clearly indicates a different meaning.

Explanation of Reference Numerals

[0163] 100: Multilayer electronic component 110: Body 111: Dielectric layer 112, 113: Cover part 114, 115: Side margin part 121, 122: Internal electrode 131, 132: External electrode

Claims

1. a body including a dielectric layer and an internal electrode; an external electrode disposed on the body; The dielectric layer is made of (Ca ｘ , Sr １－ｘ ) (Zr ｙ , Ti １－ｙ ) O ３ as a main component, a first subcomponent including a rare earth element including at least one of yttrium (Y), dysprosium (Dy), and terbium (Tb), a second subcomponent including silicon (Si), and a third subcomponent including a variable valence acceptor element; A multilayer electronic component, wherein the rare earth element content of the first minor component is 1.0 mol or more and 2.0 mol or less per 100 mol of the main component.

2. 2. The multilayer electronic component according to claim 1, wherein the x satisfies 0.5≦x<1.0, and the y satisfies 0.950≦y<1.

00.

3. 2. The multilayer electronic component according to claim 1, wherein the second minor component has a silicon (Si) content of 0.95 mol or more per 100 mol of the main component.

4. 4. The multilayer electronic component according to claim 3, wherein the second minor component has a silicon (Si) content of 0.95 mol to 1.35 mol per 100 mol of the main component.

5. 5. The multilayer electronic component according to claim 1, wherein the variable valence acceptor element includes at least one of manganese (Mn), vanadium (V), chromium (Cr), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), and zinc (Zn).

6. 5. The multilayer electronic component according to claim 1, wherein a content of the variable valence acceptor element in the third minor component is 1.0 mole or more and 3.0 moles or less per 100 moles of the main component.

7. The average sintered density of the dielectric layer is 4.66 g / cm ３ The multilayer electronic component according to claim 1 , wherein the first and second electrodes are electrically connected to each other.

8. a body including a dielectric layer and an internal electrode; an external electrode disposed on the body; The dielectric layer is made of ABO ３ The main component of the perovskite structure represented by the formula (I) and the subcomponent are included, The A site of the perovskite structure includes calcium (Ca) and strontium (Sr), and the B site of the perovskite structure includes zirconium (Zr) and titanium (Ti); The subcomponents include a first subcomponent including a rare earth element including at least one of yttrium (Y), dysprosium (Dy), and terbium (Tb), a second subcomponent including silicon (Si), and a third subcomponent including a variable valence acceptor element; A multilayer electronic component, wherein the rare earth element content of the first minor component is 1.0 mol or more and 2.0 mol or less per 100 mol of B site of the perovskite structure.

9. When the ratio of calcium (Ca) in the A site of the perovskite structure is x, the ratio of strontium (Sr) is 1-x, the ratio of zirconium (Zr) in the B site of the perovskite structure is y, and the ratio of titanium (Ti) is 1-y, 9. The multilayer electronic component according to claim 8, wherein the x satisfies 0.5≦x<1.0, and the y satisfies 0.950≦y<1.

00.

10. 9. The multilayer electronic component according to claim 8, wherein the silicon (Si) content of the second minor component is 0.95 mol or more per 100 mol of B site of the perovskite structure.

11. 11. The multilayer electronic component according to claim 10, wherein the silicon (Si) content of the second minor component is 0.95 mol or more and 1.35 mol or less with respect to 100 mol of B site of the perovskite structure.

12. 12. The laminated electronic component according to claim 8, wherein the variable valence acceptor element includes at least one of manganese (Mn), vanadium (V), chromium (Cr), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), and zinc (Zn).

13. 12. The multilayer electronic component according to claim 8, wherein a content of the variable valence acceptor element in the third minor component is 1.0 mol to 3.0 mol per 100 mol of B site of the perovskite structure.

14. The average sintered density of the dielectric layer is 4.66 g / cm ３ The multilayer electronic component according to claim 8 .

Images