Control device and control method

Abstract

To improve the quality of obtained element chips.SOLUTION: A disclosed control device operates at least one device selected from a group consisting of: a protective layer forming device that forms a protective layer on the surface of a substrate; a patterning device that patterns the protective layer to form a mask; and a plasma processing device that plasma-etches the substrate exposed through the mask to form element chips on the basis of a recipe determined for each device. The control device determines whether or not to change the recipe on the basis of third processing data in at least one processing data acquired from a measurement device that acquires the at least one processing data selected from the group consisting of first processing data related to the protective layer, second processing data related to the mask, and the third processing data related to the element chips, changes at least one recipe when the change of the recipe is necessary, and operates the at least one device on the basis of the changed recipe.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a control device and a control method for processing a substrate or the like (for example, plasma processing).

Background Art

[0002] As a method for dividing a substrate to produce a plurality of element chips, a method has been proposed in which after covering the substrate with a protective layer, the protective layer is patterned to form a mask, and then the substrate exposed from the mask is plasma-etched (Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Element chips produced by plasma etching are produced through a plurality of processes such as a process of forming a protective layer, a process of patterning the protective layer, and a process of plasma etching. Therefore, if there are variations in the shape, etching amount, etc. of the protective layer and mask produced in each process, the shape and quality of the element chips will not be stable.

Means for Solving the Problems

[0005] One aspect of the present invention relates to a dicing system including: a protective layer forming apparatus configured to form a protective layer on a surface of a substrate; a patterning apparatus configured to pattern the protective layer to form a mask; a plasma processing apparatus configured to perform plasma etching on the substrate exposed from the mask to form a plurality of element chips; a measuring apparatus configured to acquire at least one piece of processing data selected from the group consisting of first processing data related to the protective layer, second processing data related to the mask, and third processing data related to the element chips; and a control unit configured to operate at least one apparatus selected from the group consisting of the protective layer forming apparatus, the patterning apparatus, and the plasma processing apparatus based on a recipe determined for each apparatus, wherein the control unit determines whether to change the recipe based on at least one of the at least one piece of processing data, and when it is necessary to change the recipe, changes at least one of the recipes and operates at least one apparatus selected from the group consisting of the protective layer forming apparatus, the patterning apparatus, and the plasma processing apparatus based on the changed recipe.

[0006] Another aspect of the present invention relates to a dicing method, comprising: a protective layer forming step of forming a protective layer on the surface of a substrate based on a first recipe; a patterning step of patterning the protective layer to form a mask based on a second recipe; a plasma processing step of plasma etching the substrate exposed from the mask based on a third recipe to form a plurality of element chips; a measurement step of obtaining at least one piece of processing data selected from the group consisting of first processing data regarding the protective layer, second processing data regarding the mask, and third processing data regarding the element chips; a recipe change determination step of determining whether to change at least one recipe selected from the group consisting of the first recipe, the second recipe, and the third recipe based on at least one of the obtained at least one piece of processing data, and if a change in the at least one recipe is necessary, a recipe change step of changing the at least one recipe; and a feedback step of feeding back the changed at least one recipe to the control of the step corresponding to the at least one recipe. In a first example of this dicing method, the at least one recipe is the first recipe, and if a change in the first recipe is necessary, in the feedback step, the changed first recipe is fed back to the control of the protective layer forming step. In a second example of this dicing method, the at least one recipe is the second recipe, and if a change in the second recipe is necessary, in the feedback step, the changed second recipe is fed back to the control of the patterning step. In a third example of this dicing method, the at least one recipe is the third recipe, and if a change in the third recipe is necessary, in the feedback step, the changed third recipe is fed back to the control of the plasma processing step.

[0007] Another aspect of the present invention relates to a dicing method, comprising: a protective layer forming step of forming a protective layer on a surface of a substrate based on a first recipe; a patterning step of patterning the protective layer to form a mask based on a second recipe; a plasma processing step of plasma etching the substrate exposed from the mask to form a plurality of element chips based on a third recipe; a measuring step of obtaining at least one of first processing data regarding the protective layer, second processing data regarding the mask, and third processing data regarding the element chips; a determining step of determining whether to change the first recipe based on at least one of the obtained first processing data, the second processing data, and the third processing data, and when it is necessary to change the first recipe, a first recipe changing step of changing the first recipe; and a first feedback step of feeding back the changed first recipe to control the protective layer forming step.

[0008] Still another aspect of the present invention relates to a dicing method, comprising: a protective layer forming step of forming a protective layer on a surface of a substrate based on a first recipe; a patterning step of patterning the protective layer to form a mask based on a second recipe; a plasma processing step of plasma etching the substrate exposed from the mask to form a plurality of element chips based on a third recipe; a measuring step of obtaining at least one of first processing data regarding the protective layer, second processing data regarding the mask, and third processing data regarding the element chips; a determining step of determining whether to change the second recipe based on at least one of the obtained first processing data, the second processing data, and the third processing data, and when it is necessary to change the second recipe, a second recipe changing step of changing the second recipe; and a second feedback step of feeding back the changed second recipe to control the patterning step.

[0009] Still another aspect of the present invention relates to a dicing method, comprising: a protective layer forming step of forming a protective layer on a surface of a substrate based on a first recipe; a patterning step of patterning the protective layer to form a mask based on a second recipe; a plasma processing step of plasma etching the substrate exposed from the mask to form a plurality of element chips based on a third recipe; a measuring step of obtaining at least one of first processing data regarding the protective layer, second processing data regarding the mask, and third processing data regarding the element chips; a determining step of determining whether to change the third recipe based on at least one of the obtained first processing data, the second processing data, and the third processing data, and if it is necessary to change the third recipe, a third recipe changing step of changing the third recipe; and a third feedback step of feeding back the changed third recipe to control the plasma processing step.

[0010] Still another aspect of the present invention relates to a dicing method, comprising: a protective layer forming step of forming a protective layer on a surface of a substrate based on a first recipe; a patterning step of patterning the protective layer to form a mask based on a second recipe; a plasma processing step of plasma etching the substrate exposed from the mask to form a plurality of element chips based on a third recipe; a measuring step of obtaining second processing data regarding the mask; a determining step of determining whether to change the third recipe based on the obtained second processing data, and if it is necessary to change the third recipe, a third recipe changing step of changing the third recipe; and a feed-forward step of feeding forward the changed third recipe to control the plasma processing step. This specification further discloses the following technology. (Technology 1) A control device that operates at least one device selected from the group consisting of a protective layer forming device that forms a protective layer on the surface of a substrate, a patterning device that patterns the protective layer to form a mask, and a plasma processing device that plasma etches the substrate exposed from the mask to form a plurality of element chips, based on a recipe determined for each device, Determines whether to change the recipe based on the third processing data among the at least one piece of processing data acquired from a measuring device that acquires at least one piece of processing data selected from the group consisting of first processing data regarding the protective layer, second processing data regarding the mask, and third processing data regarding the element chips. If a change to the recipe is necessary, at least one of the recipes is changed, and at least one device selected from the group consisting of the protective layer forming device, the patterning device, and the plasma processing device is operated based on the changed recipe. A control device. (Technology 2) The control device according to Technology 1, wherein the third processing data includes parameters representing the shape at the end face of the element chip. (Technology 3) The control device according to Technology 2, wherein when a change to the recipe is necessary, the recipe regarding the plasma processing device is changed. (Technology 4) The control device according to Technology 1, wherein the third processing data includes parameters representing the state of the surface of the mask covering the surface of the element chip. (Technology 5) The control device according to Technology 4, wherein when a change to the recipe is necessary, at least one of the recipes regarding the protective layer forming device and the patterning device is changed. (Technology 6) A control device that operates at least one device selected from the group consisting of a protective layer forming device that forms a protective layer on the surface of a substrate, a patterning device that patterns the protective layer to form a mask, and a plasma processing device that plasma etches the substrate exposed from the mask to form a plurality of element chips, based on a recipe determined for each device, A control device that determines whether to change the recipe based on the second processing data among the at least one piece of processing data obtained from a measuring device that obtains at least one piece of processing data selected from the group consisting of first processing data related to the protective layer, second processing data related to the mask, and third processing data related to the element chip. If a change to the recipe is necessary, at least one of the recipes is changed, and at least one device selected from the group consisting of the protective layer forming device, the patterning device, and the plasma processing device is operated based on the changed recipe. (Technology 7) The control device according to Technology 6, wherein the second processing data includes a patterning width. (Technology 8) The control device according to Technology 7, wherein when a change to the recipe is necessary, the recipe related to the patterning device is changed. (Technology 9) A control device that operates at least one device selected from the group consisting of a protective layer forming device that forms a protective layer on the surface of a substrate, a patterning device that patterns the protective layer to form a mask, and a plasma processing device that plasma etches the substrate exposed from the mask to form a plurality of element chips, based on a recipe determined for each device. It determines whether to change the recipe based on at least one of the at least one piece of processing data obtained from a measuring device that obtains at least one piece of processing data selected from the group consisting of first processing data related to the protective layer, second processing data related to the mask, and third processing data related to the element chip. If a change to the recipe is necessary, at least one of the recipes is changed, and at least one device selected from the group consisting of the protective layer forming device, the patterning device, and the plasma processing device is operated based on the changed recipe. A control device comprising an arithmetic unit that calculates the difference between the prediction data regarding the element chip calculated by a simulator based on the second processing data and the recipe regarding the plasma processing apparatus, and the third processing data. (Technology 10) The control device according to Technology 9, wherein when the absolute value of the difference is greater than a preset threshold value, a notification unit that notifies the maintenance timing of the plasma processing apparatus is caused to notify the maintenance timing. (Technology 11) Operate a protective film forming apparatus to perform a protective layer forming step of forming a protective layer on the surface of a substrate based on a first recipe. Operate a patterning apparatus to perform a patterning step of patterning the protective layer to form a mask based on a second recipe. Operate a plasma processing apparatus to perform a plasma processing step of plasma etching the substrate exposed from the mask to form a plurality of element chips based on a third recipe. Operate a measuring device to perform a measuring step of acquiring at least one piece of processing data selected from the group consisting of first processing data regarding the protective layer, second processing data regarding the mask, and third processing data regarding the element chip. Based on at least one of the at least one piece of acquired processing data, determine whether to change the second recipe. If it is necessary to change the second recipe, a recipe changing step of changing the second recipe, and A feedback step of feeding back the changed second recipe to the control of the patterning step. (Technology 12) Operate a protective film forming apparatus to perform a protective layer forming step of forming a protective layer on the surface of a substrate based on a first recipe. Operate a patterning apparatus to perform a patterning step of patterning the protective layer to form a mask based on a second recipe. Based on the third recipe, operate the plasma processing apparatus to perform a plasma processing step of plasma etching the substrate exposed from the mask to form a plurality of element chips. Operate the measuring device to perform a measuring step of obtaining at least one piece of processing data selected from the group consisting of first processing data regarding the protective layer, second processing data regarding the mask, and third processing data regarding the element chips. Based on at least one of the obtained at least one piece of processing data, determine whether to change the third recipe. If it is necessary to change the third recipe, a recipe change step of changing the third recipe. A control method comprising a feedback step of feeding back the changed third recipe to the control of the plasma processing step. (Technology 13) Operate the protective film forming apparatus to perform a protective layer forming step of forming a protective layer on the surface of the substrate based on the first recipe. Operate the patterning apparatus to perform a patterning step of patterning the protective layer to form a mask based on the second recipe. Based on the third recipe, operate the plasma processing apparatus to perform a plasma processing step of plasma etching the substrate exposed from the mask to form a plurality of element chips. Operate the measuring device to perform a measuring step of obtaining the second processing data regarding the mask. Based on the obtained second processing data, determine whether to change the third recipe. If it is necessary to change the third recipe, a third recipe change step of changing the third recipe. A control method comprising a feedforward step of feedforwarding the changed third recipe to the control of the plasma processing step. [Advantages of the Invention]

[0011] According to the present invention, the quality of the obtained element chips is improved. The novel features of the present invention are described in the appended claims, but the present invention will be better understood with reference to the following detailed description taken in conjunction with the drawings, both as to its construction and content, and other objects and features of the present invention.

Brief Description of the Drawings

[0012]

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Mode for Carrying Out the Invention

[0013] A recipe (etching conditions) used for plasma etching is usually determined by analyzing a huge amount of accumulated processing data. This processing data is obtained by repeating processing while changing the etching conditions for each substrate to be etched. The determined recipe is input into a plasma processing apparatus, and plasma etching is performed based on this. Plasma etching is usually continuously performed on a plurality of substrates of the same type.

[0014] The determination of the above recipe is made on the premise that a mask in a target state is formed on a substrate. However, in actual processing, the state of the mask may not match the set value. For example, the actual patterning width may be larger than the set value. In this case, if plasma etching is performed using a recipe determined from past processing data, the etching amount of the substrate becomes excessive, and the quality of the obtained element chip deteriorates.

[0015] Also, even if the etching conditions are set according to the recipe, desired etching may not be performed due to changes in the internal state of the apparatus used or parts over time.

[0016] Therefore, in the present embodiment, the etching conditions are changed based on data regarding the shape of the actually formed mask, and the plasma processing apparatus is feedback-controlled or feedforward-controlled. Further, in the present embodiment, there are aspects of changing the protective layer formation conditions based on data regarding the shape of the actually formed mask and feedback-controlling the protective layer formation apparatus, and aspects of changing the patterning conditions based on data regarding the shape of the actually formed mask and feedback-controlling the patterning apparatus.

[0017] Furthermore, the present embodiment includes aspects of changing the protective layer formation conditions based on data regarding the actually fabricated element chip and feedback-controlling the protective layer formation apparatus, aspects of changing the patterning conditions based on data regarding the actually fabricated element chip and feedback-controlling the patterning apparatus, and aspects of changing the etching conditions based on data regarding the actually fabricated element chip and feedback-controlling the plasma processing apparatus. By performing at least one of the above feedforward control and feedback control, the quality of the obtained element chip is improved.

[0018] Through feedback control and feedforward control, the recipe is changed using data regarding the actually formed mask and / or data regarding the device chips obtained through an etching process, and this changed recipe is applied to the dicing process. As a result, high-quality device chips can be efficiently manufactured.

[0019] The generation of the changed recipe can be automatically performed using an algorithm for recipe generation. The application of the changed recipe to each device is also automatically performed by the control unit. Therefore, the number of processes is reduced and productivity is improved.

[0020] A. Dicing System The dicing system according to this embodiment includes a protective layer forming device, a patterning device, a plasma processing device, a measuring device, and a control unit (control device).

[0021] The protective layer forming device forms a protective layer on the surface of the substrate based on the first recipe. The patterning device patterns the protective layer to form a mask based on the second recipe. The plasma processing device plasma etches the substrate exposed from the mask to form a plurality of device chips based on the third recipe. The measuring device acquires at least one piece of processing data selected from the group consisting of first processing data regarding the protective layer, second processing data regarding the mask, and third processing data regarding the device chips. The control unit controls at least one device selected from the group consisting of the protective layer forming device, the patterning device, and the plasma processing device.

[0022] (Control Unit (Control Device)) Specifically, the control unit generates a recipe, determines whether the recipe needs to be changed, changes the recipe, and operates each device with the optimal recipe.

[0023] Whether to change the recipe is determined based on at least one of the at least one piece of processed data obtained (the first processed data, the second processed data, and the third processed data obtained). For example, if any of the processed data exceeds the allowable range set based on the target data, it is determined that the recipe needs to be changed. The target data is various data related to the target mask and the device chip. It is sufficient that one or more pieces of processed data are used. Multiple pieces of processed data may be used to determine whether the recipe needs to be changed. The multiple pieces of processed data may be two or more pieces of first processed data, two or more pieces of second processed data, two or more pieces of third processed data, or a combination of these processed data.

[0024] The recipe to be changed is not particularly limited and is at least one recipe selected from the group consisting of the first recipe, the second recipe, and the third recipe (hereinafter, may be simply referred to as a recipe). It is sufficient to change the recipe that controls the process that most affects the deviation between the processed data and the target data.

[0025] One of the factors for the first, second, or third processed data exceeding the allowable range is a defect in the protective layer. In this case, the first recipe is changed. Then, the protective layer forming apparatus is feedback-controlled so that the protective layer is formed based on the changed first recipe on another substrate to be processed later.

[0026] One of the factors for the second or third processed data exceeding the allowable range is inappropriate patterning. In this case, the second recipe is changed. Then, the patterning apparatus is feedback-controlled so that another substrate to be processed later is patterned based on the changed second recipe.

[0027] One of the factors for the third processed data exceeding the allowable range is inappropriate plasma etching. In this case, the third recipe is changed. Then, the plasma processing apparatus is feedback-controlled so that another substrate to be processed later is plasma-processed based on the changed third recipe.

[0028] Even when the second processing data exceeds the allowable range, the third processing data can be brought within the allowable range by changing the recipe during plasma processing. That is, by resetting the etching conditions suitable for the formed mask, high-quality device chips may be obtained. In this case, the plasma processing apparatus is feedback-controlled or feed-forward-controlled so that the third recipe is changed and the substrate is plasma-processed based on the changed third recipe.

[0029] In addition to the protective layer forming apparatus, the patterning apparatus, and the plasma processing apparatus, an input unit, for example, is connected to the control unit. The input unit is installed in each apparatus, for example. At least one of target data, first processing data, second processing data, and third processing data is input to the input unit. The input of the target data is performed by an operator. The input of the above processing data may be performed by an operator or automatically from a measuring device.

[0030] The administrator who owns the server to which the control unit is connected, the owner of the protective layer forming apparatus, the owner of the patterning apparatus, and the owner of the plasma processing apparatus may be different from each other. The above server and each apparatus are connected by a computer network. When the necessary data is input to the input unit, the data is transmitted to the server. The control unit reads the necessary data from the server, performs calculations, etc. as necessary, and remotely operates each apparatus based on the result.

[0031] The control unit includes, for example, a storage unit, an arithmetic unit, and a device control unit. A first database storing information for generating a recipe is connected to the storage unit. The first database stores accumulated past processing data, substrate data regarding the substrate to be etched, and equipment data regarding at least one of the protective layer forming apparatus, the patterning apparatus, and the plasma processing apparatus.

[0032] The stored processing data includes etching conditions, the etching rate of the device chip associated with these etching conditions, the etching depth, the width and aspect ratio of the formed groove, etc. The substrate data includes the lot number, the material of the substrate, the type of the mounted device, etc. The equipment data includes the device specifications, the last maintenance date, the processing history, the log data during processing, etc.

[0033] When the dicing process starts, the arithmetic unit first generates an optimal recipe (initial recipe) for the target substrate based on the various data stored in the first database and the target data input by the input unit. However, any one of the first recipe, the second recipe, and the third recipe may be determined in advance. In this case, an initial recipe other than the determined recipe is generated. The determined recipe may be input to the input unit. The input target data is stored in the first database.

[0034] As the dicing process progresses and at least one of the first processing data, the second processing data, and the third processing data is input to the input unit, the arithmetic unit determines whether to change the initial recipe based on the various data stored in the first database and the newly input processing data. When it is determined that the change of the initial recipe is necessary, the control unit generates a changed recipe and changes the initial recipe. A predetermined algorithm is used for generating the initial recipe and the changed recipe.

[0035] The recipe generated by the arithmetic unit is stored in the storage unit as the second database. The second database stores the initial recipe and the changed recipe generated by the arithmetic unit. The recipe stored in the second database can be used together with the first database for generating the changed recipe and the initial recipe of other types of substrates.

[0036] The device control unit operates the protective layer forming device, the patterning device, and the plasma processing device based on the generated initial recipe or changed recipe.

[0037] (Simulator) The dicing system may further include a simulator. The simulator calculates prediction data regarding the processed shape of the element chip based on the second processing data and the third recipe. The prediction data is stored in the storage unit as a third database. The third recipe used by the simulator may be an initial recipe or a modified recipe. The simulator includes, for example, a computer. The server may include a simulator (i.e., a simulation function).

[0038] The simulator can also be used to generate a third recipe. For example, using the simulator, a plurality of processed shapes of the resulting element chips are predicted based on the second processing data and the accumulated processing data. Then, the calculation unit calculates the differences between the plurality of predicted processed shapes of the element chips and the desired processed shape, and generates an optimal third recipe in consideration of these differences. This third recipe is used for plasma processing instead of the initial third recipe.

[0039] In addition, the prediction data can be used to determine the presence or absence of an abnormality in the plasma processing apparatus. For example, when the absolute value of the difference between the prediction data calculated by the simulator and the third processing data, which is the measured value, exceeds a predetermined threshold, it can be determined that there is an abnormality in the plasma processing apparatus. In this case, it is desirable to perform maintenance on the apparatus. On the other hand, when the absolute value of the difference between the prediction data and the third processing data is smaller than the threshold, it can be determined that there is no abnormality in the plasma processing apparatus. In this case, the simulator can be further used to generate a third recipe as described above. This third recipe is used for plasma processing instead of the initial third recipe.

[0040] (Notification unit) In this embodiment, a notification unit is installed in the dicing system to notify the maintenance time. Specifically, in a dicing system equipped with a simulator, when the absolute value of the difference between the prediction data and the third processing data which is the measured value is greater than a preset threshold value, the control unit uses a predetermined algorithm to identify which of the devices causing the problem is the protective layer forming device, the patterning device, or the plasma processing device, and calculates the maintenance timing. The calculation result is notified by the notification unit to the owner or operator of each device. On the other hand, when the absolute value of the difference between the prediction data and the third processing data which is the measured value is less than or equal to the preset threshold value, the control unit is made to determine whether to generate a change recipe as described above. The threshold value is usually set so as to exceed the allowable range of the target data.

[0041] The notification unit includes, for example, a display unit for displaying the maintenance timing, or a voice generation unit for notifying that the maintenance timing has arrived. The notification unit notifies the owner or operator of each device of the maintenance timing by display or voice. The notification unit can further notify other information. The notification unit may be installed in any of the mask forming device, the patterning device, and the plasma processing device, or may be installed in a server equipped with a control unit.

[0042] (Ordering section) The dicing system may further include an ordering section that automatically orders parts of the device. The control unit causes the notification unit to notify the maintenance timing of the causative device, and causes the ordering section to order the parts of the causative device. This enables predictive maintenance of the dicing system and improves productivity.

[0043] (Protective layer forming device) The protective layer forming device is not particularly limited as long as it can form a protective layer on the surface of the substrate. Examples of the protective layer forming device include a spin coater, a spray coater, a die coater, a laminator, and the like.

[0044] Examples of the first recipe include the type of mask material, the coating amount of the mask material, the coating speed, and the like.

[0045] (Patterning device) The patterning device is not particularly limited as long as it can pattern the protective layer. The patterning device may be appropriately selected according to the material of the protective layer. When the protective layer is formed of a photosensitive resin, it can be patterned by an exposure device. When the protective layer is formed of other resins, it can be patterned by a laser processing device.

[0046] When using an exposure device, examples of the second recipe include exposure amount, depth of focus, etc. When using a laser processing device, examples of the second recipe include laser output, scanning speed, pulse width, frequency, etc.

[0047] (Plasma processing device) The plasma processing device is not particularly limited as long as it can plasma etch the substrate exposed from the mask. The plasma processing device includes, for example, a reaction chamber, a plasma generation unit that generates plasma in the reaction chamber, and a stage installed inside the reaction chamber on which the substrate is placed. The plasma generation unit is composed of, for example, an electrode installed above the reaction chamber and a process gas source that supplies a plasma generation gas (process gas) into the reaction chamber. When the process gas is supplied to the reaction chamber, plasma is generated in the reaction chamber by supplying high-frequency power to the above electrode.

[0048] Examples of the third recipe include the pressure inside the reaction chamber, the type and flow rate of the process gas, the magnitude of the high-frequency power, the frequency of the high frequency, the processing time, etc.

[0049] (Measurement device) The measurement device is not particularly limited as long as it can acquire at least one of the first processing data related to the protective layer, the second processing data related to the mask, and the third processing data related to the element chip. Examples of the measurement device include an optical shape measurement device, a scanning electron microscope (SEM), etc.

[0050] Examples of the first processing data include the film thickness of the protective layer, its variation, parameters representing the surface state of the protective layer, etc. Parameters representing the surface state of the protective layer include, for example, the presence or absence of pinholes on the surface of the protective layer and roughness (flatness). Also, when the substrate has irregularities on its surface, parameters representing the surface state of the protective layer include data related to the covering state of the irregularities by the protective layer.

[0051] Examples of the second processing data include the patterning width, its variation, the thickness of the mask, its variation, parameters representing the surface state of the mask, etc. Parameters representing the surface state of the mask include, for example, the presence or absence of pinholes on the surface of the mask and roughness (flatness). Also, when the substrate has irregularities on its surface, parameters representing the surface state of the mask include data related to the covering state of the irregularities by the mask.

[0052] Examples of the third processing data include parameters representing the surface state of the mask covering the surface of the element chip, parameters representing the shape at the end face of the element chip, the distance between adjacent element chips and its variation, etc. Parameters representing the surface state of the mask covering the surface of the element chip include, for example, the presence or absence of pinholes on the surface of the mask and roughness (flatness). Also, when the substrate has irregularities on its surface, parameters representing the surface state of the mask covering the surface of the element chip include data related to the covering state of the irregularities by the mask.

[0053] Parameters representing the shape at the end face of the element chip include, for example, the height and width of the scallop formed on the end face, the size and number of voids formed on the end face, the inclination angle of the end face, the size of the notch, etc. The distance between adjacent element chips includes, for example, the distance between element chips on the mask side and the distance between element chips on the side opposite to the mask.

[0054] Data regarding the covering state of the unevenness specifically includes the thickness of a protective layer or mask (hereinafter sometimes referred to as a protective layer or the like) covering the concave portion, the thickness of the protective layer or the like covering the convex portion, or the ratio of the thickness of the protective layer or the like covering the concave portion and the convex portion.

[0055] (Substrate) The substrate to be etched is not particularly limited. For example, substrates used in the manufacture of electronic devices, circuit boards on which circuits are formed, mounting substrates on which electronic components are mounted on circuit boards, semiconductor substrates, and the like can be mentioned. Bumps, pad electrodes, etc. may be arranged on the surface of the substrate. In this case, the surface of the substrate may have unevenness.

[0056] FIG. 1 is a block diagram showing an example of the configuration of a dicing system according to the present embodiment. The dicing system 1000A includes a control unit 100, a protective layer forming device 200, a patterning device 300, a plasma processing device 400, a measurement device 500, and an input unit 600.

[0057] The input unit 600 receives target data D00 regarding the substrate to be etched, first processing data D01, second processing data D02, and third processing data D03. At least one of the first processing data D01, the second processing data D02, and the third processing data D03 may be input. The first processing data D01 is data regarding the formed protective layer acquired by the measurement device 500. The second processing data D02 is data regarding the formed mask acquired by the measurement device 500. The third processing data D03 is data regarding the formed element chip acquired by the measurement device 500. The measurement devices for acquiring the first processing data D01, the second processing data D02, and the third processing data D03 may be the same or different.

[0058] The control unit 100 includes a storage unit 101, an arithmetic unit 102, and a device control unit 103. The storage unit 101 stores a first database DB01 and a second database DB02. The first database DB01 stores accumulated processed data, substrate data, and equipment data. The second database DB02 stores the initial recipe and the changed recipe generated by the arithmetic unit 102.

[0059] In the arithmetic unit 102, at least one of a first recipe, a second recipe, and a third recipe is generated. The recipe generated here can be an initial recipe or a changed recipe.

[0060] Based on the generated initial recipe or changed recipe, the device control unit 103 operates at least one of a protective layer forming device 200, a patterning device 300, and a plasma processing device 400.

[0061] FIG. 2 is a block diagram showing another example of the configuration of the dicing system according to the present embodiment. The dicing system 1000B has the same configuration as the dicing system 1000A shown in FIG. 1, except that it includes a simulator 700 and a third database DB03 is further stored in the storage unit 101.

[0062] Based on the second processed data D02 input to the input unit 600 and the third recipe stored in the second database DB02, the simulator 700 calculates prediction data regarding the element chip. The arithmetic unit 102 calculates the difference between the prediction data calculated by the simulator 700 and the third processed data D03 which is the measured value, and generates a changed recipe based on this difference. The prediction data calculated by the simulator 700 is stored in the third database DB03.

[0063] FIG. 3 is a block diagram showing another example of the configuration of the dicing system according to the present embodiment. The dicing system 1000C has the same configuration as the dicing system 1000B shown in FIG. 2, except that it includes a notification unit 800 and an ordering unit 900.

[0064] The calculation unit 102 calculates the difference between the predicted data calculated by the simulator 700 and the third processed data D03 which is the measured value, and determines whether the absolute value of this difference exceeds a threshold value. When the absolute value of the difference exceeds the threshold value, the calculation unit 102 further performs calculations to identify the cause device and calculate the maintenance timing. The maintenance timing is notified to the owner or operator of the cause device by the notification unit 800. When the absolute value of the difference is less than or equal to the threshold value, it is determined whether to generate a change recipe. The ordering unit 900 orders parts of the cause device from the manufacturer as necessary.

[0065] FIG. 4 is a flowchart showing an example of the processing performed by the control unit according to the present embodiment. When the dicing process is started and target data is input to the input unit (S01). The control unit reads out the accumulated processed data stored in the first database, and generates an initial recipe suitable for the target substrate based on the accumulated processed data and the target data (S02). The generated initial recipe is stored in the second database. Then each device operates based on the initial recipe, and the substrate is processed based on the initial recipe. (S03).

[0066] The dicing process proceeds, and at least one of the processed data obtained from the substrates processed by each device, that is, the first processed data, the second processed data, and the third processed data, is acquired (S04). The control unit determines whether to change the initial recipe based on the target data and each processed data (S05). If it is determined that changing the initial recipe is unnecessary, each device is controlled to operate based on the initial recipe (S06). On the other hand, if it is determined that changing the initial recipe is necessary, the control unit generates a changed recipe and changes the initial recipe (S07). Each device is controlled to operate based on the changed recipe (S08). A predetermined algorithm is used for generating the initial recipe and the changed recipe. The generated changed recipe is stored in the second database.

[0067] FIG. 5 is a flowchart showing another example of the process performed by the control unit according to the present embodiment. FIG. 5 shows the case where a simulator is installed. The dicing process is started, and target data is input to the input unit (S01). The control unit reads out the accumulated processed data stored in the first database and generates an initial recipe suitable for the target substrate based on the accumulated processed data and the target data (S02). The generated initial recipe is stored in the second database. Then each device operates based on the initial recipe, and the substrate is processed based on the initial recipe. (S03).

[0068] When the dicing process proceeds and both the second processed data and the third processed data are acquired (S04), the control unit reads out the third recipe stored in the second database and activates the simulator. The simulator calculates prediction data regarding the element chips based on the second processed data and the third recipe (S05). The prediction data is stored in the third database.

[0069] Subsequently, the difference between the calculated prediction data and the third processed data which is the measured value is calculated (S06). The control unit determines whether or not the absolute value of this difference is within the set threshold (S07). When it is determined that the absolute value of the difference is within the threshold, it is determined whether or not to change the third recipe (S08). The subsequent steps (S09 to S11) are performed in the same manner as steps S06 to S08 shown in FIG. 4.

[0070] On the other hand, when it is determined that the absolute value of the difference is not within the threshold, the control unit identifies the cause device using a predetermined algorithm and calculates the maintenance timing (S12). Thereafter, the control unit controls the notification unit to notify the operator of the maintenance timing of the cause device (S13).

[0071] B. Dicing method The dicing method according to the present embodiment includes a protective layer forming step of forming a protective layer on the surface of the substrate based on the first recipe, a patterning step of patterning the protective layer to form a mask based on the second recipe, and a plasma etching step of plasma etching the substrate exposed from the mask based on the third recipe to form a plurality of element chips, a measurement step of acquiring at least one of the first processed data regarding the protective layer, the second processed data regarding the mask, and the third processed data regarding the element chips, a recipe change determination step of determining whether or not to change the recipe based on at least one of the first processed data, the second processed data, and the third processed data, and when a recipe change is necessary, a recipe change step of changing any of the above recipes, and a feedback step of feeding back the changed recipe to the control of the corresponding step. When the third recipe is changed, the changed recipe may be feed-forwarded.

[0072] When the first recipe is changed, the changed recipe is fed back to the protective layer forming apparatus, and the subsequent protective layer forming process is executed according to the changed first recipe. When the second recipe is changed, the changed recipe is fed back to the patterning apparatus, and the subsequent patterning process is executed according to the changed second recipe. When the third recipe is changed, the changed recipe is fed back to or fed forward to the plasma processing apparatus. When fed back, the subsequent plasma processing process is executed according to the changed third recipe. When fed forward, the current plasma processing process is executed according to the changed third recipe.

[0073] Hereinafter, the dicing method according to the present embodiment will be described by dividing it into Mode I in which a change in the first recipe is determined, Mode II in which a change in the second recipe is determined, and Mode III in which a change in the third recipe is determined. The exemplified modes are executed by the above-described dicing system. However, the dicing method according to the present embodiment is not limited thereto.

[0074] [Mode I] In this mode, it is determined whether to change the first recipe based on at least one of the first processing data, the second processing data, and the third processing data.

[0075] (Mode I-a) In this mode, it is determined whether to change the first recipe that controls the formation process of the protective layer by using the second processing data related to the mask formed on the m-th (m is an integer of 1 or more) substrate. The changed first recipe is fed back to the protective layer forming process of the (m + n)-th (n is an integer of 1 or more) substrate. FIG. 6 is a flowchart for explaining this mode.

[0076] (1) Input of target data Target data is input to the input unit connected to the control unit (ST001). The calculation unit generates at least one of a first recipe, a second recipe, and a third recipe from target data, a first database, etc. using a predetermined algorithm (ST002). The generated initial recipe is stored in the second database.

[0077] (2) Formation of the protective layer Based on the first recipe, a protective layer is formed on the surface of the m-th substrate (ST003). The protective layer includes a so-called resist material such as a thermosetting resin such as polyimide, a photoresist such as a phenol resin, or a water-soluble resist such as an acrylic resin. The protective layer is formed, for example, by molding the resist material into a sheet shape and then attaching this sheet to the laminated substrate, or by applying a raw material liquid of the resist material to the substrate using a method such as spin coating or spray coating.

[0078] The thickness of the protective layer is not particularly limited, but it is preferably such that it is not completely removed by the subsequent plasma etching. The thickness of the protective layer is set, for example, by calculating the total amount (thickness) by which the protective layer is etched in plasma etching so that it is not less than this etching amount. The thickness of the protective layer is, for example, not less than 5 μm and not more than 60 μm.

[0079] From the viewpoint of handleability, after the protective layer formation step, it is preferable that the substrate is processed while being supported by a support member. The support member is, for example, a resin film. The outer periphery of the support member is fixed to, for example, a metal frame.

[0080] (3) Patterning Based on the second recipe, the protective layer is patterned to form a mask (ST004). As a result, a part of the substrate is exposed from the mask.

[0081] The mask is formed by removing, by photolithography, a region corresponding to a region (division region) to be removed by etching the substrate among the protective layers formed of, for example, photoresist. Among the protective layers formed of a thermosetting resin or a water-soluble resist, the division region of the substrate may be removed by laser scribing. In patterning, a part of the substrate may be removed together with the protective layer.

[0082] (4) Acquisition of second processing data Second processing data regarding the formed mask is acquired (ST005). In this embodiment, the thickness of the mask is acquired as the second processing data.

[0083] (5) Plasma etching The portion of the m-th substrate exposed from the mask is plasma-etched based on the third recipe (ST006). Thereby, a plurality of element chips are formed, and the dicing process for the m-th substrate is completed.

[0084] (6) Change of the first recipe It is determined whether or not the second processing data acquired above is within an allowable range (ST007). Specifically, the measured thickness of the mask and the thickness of the mask in the target data are compared to determine whether it is acceptable.

[0085] When it is determined that the second processing data exceeds the allowable range set based on the target data, the control unit generates a new first recipe (ST008) and changes the first recipe. The changed first recipe is used for the step of forming the protective layer for the (m + n)-th substrate (ST011). Thereby, a mask having a predetermined thickness can be formed, and it is possible to suppress the surface of the element chip from being directly exposed to the plasma and damaged in plasma etching. On the other hand, when it is determined that the second processing data is within the allowable range, the first recipe is not changed, and the initial first recipe is applied to the (m + n)-th substrate.

[0086] For the substrates after the (m + n)-th substrate, a mask is formed in the same manner as above, and it is determined whether or not it is necessary to change the first recipe (ST012 to ST015). Then, if necessary, the first recipe is changed (ST016).

[0087] (Aspect I-b) This aspect is the same as Aspect I-a except that the changed first recipe is fed back to the formation of the protective layer of the m-th substrate. As a result, high-quality element chips can be obtained with a high yield.

[0088] This aspect can be applied when the mask is patterned by a method other than laser processing. This is because in laser processing, a part of the substrate can be removed during patterning. When it is patterned by another method, once all the mask is removed, a protective layer may be formed again on the m-th substrate based on the changed first recipe. FIG. 7 is a flowchart for explaining this aspect.

[0089] In this aspect, before the plasma treatment for the m-th substrate is executed, it is determined whether or not the second processing data is within an allowable range (ST006). When it is determined that the second processing data exceeds the allowable range, the first recipe is changed (ST007). The changed first recipe is used for reforming the protective layer for the m-th substrate. On the other hand, when it is determined that the second processing data is within the allowable range, the first recipe is not changed, and the plasma treatment for the m-th substrate is executed using the initial recipe (ST008).

[0090] (Aspect I-c) This aspect is the same as Aspect I-a except that the third processing data regarding the element chips manufactured from the m-th substrate is used. The changed first recipe is fed back to the formation of the protective layer of the (m + n)-th substrate. FIG. 8 is a flowchart for explaining this aspect.

[0091] In this aspect, after plasma etching, third processing data regarding the fabricated element chip is acquired (ST006). As the third processing data, for example, the thickness of a mask covering the surface of the element chip is acquired. The measured thickness of the mask is compared with the thickness of the mask in the target data to determine whether it is acceptable (ST007). If it is not acceptable, the first recipe is changed (ST008). The changed first recipe is used for forming the protective layer on the (m + n)-th substrate. Thereby, a mask having a desired thickness is formed.

[0092] Note that in Embodiment I-a and Embodiment I-b, the case where the thickness of the mask is used as the second processing data has been described, but the present invention is not limited thereto. When there are irregularities on the surface of the substrate due to bumps, pad electrodes, etc., data regarding the covering state of the irregularities may be used as at least one of the first processing data, the second processing data, and the third processing data.

[0093] When a substrate having irregularities is used, the thickness of a protective layer or the like covering the convex portions tends to be thinner than that of the concave portions. Therefore, the mask covering the convex portions may be completely removed during etching, and the convex portions may be directly exposed to the plasma and damaged. By changing the first recipe using data regarding the covering state of the irregularities as at least one of the first processing data, the second processing data, and the third processing data, the convex portions can be covered with a protective layer or the like having a sufficient thickness. Thus, the quality of the obtained element chip is improved.

[0094] Also, in Embodiment I-a, Embodiment I-b, and Embodiment I-c, the second processing data or the third processing data is used, but it is also possible to determine whether a recipe change is necessary using the first processing data. In this case, after forming the protective layer, first processing data regarding the formed protective layer is acquired. As the first processing data, the thickness of the protective layer is desirable.

[0095] [Embodiment II] Based on the second processing data and / or the third processing data, it is determined whether to change the second recipe.

[0096] (Aspect II-a) In this aspect, it is determined whether to change the second recipe for controlling the patterning process by using the second processing data regarding the mask formed on the m-th substrate. In other respects, Aspect II-a is the same as Aspect I-a. The changed second recipe is fed back to the patterning of the (m + n)-th substrate. FIG. 9 is a flowchart for explaining this aspect.

[0097] In this aspect, for example, the patterning width is acquired as the second processing data. The measured patterning width is compared with the patterning width in the target data to determine whether it is acceptable.

[0098] FIG. 10 is a cross-sectional view schematically showing a part of the m-th substrate after the patterning process when the second processing data exceeds the allowable range set based on the target data. A mask 30 is formed on one main surface of the substrate 10. The other main surface of the substrate 10 is adhered to and supported by a support member 40. In the m-th substrate 10, the patterning width W is larger than the target value W 0 and exceeds the allowable range (W ≫ W 0 ).

[0099] When the m-th substrate is plasma-treated based on the initial recipe, the etching amount increases and the distance between the element chips becomes larger. When the substrate is supported by the support member, the support member functions as a stop layer. Therefore, due to excessive plasma treatment, the end face of the element chip on the support member side largely enters inward.

[0100] FIG. 11 is a cross-sectional view schematically showing a part of the m-th substrate after the plasma processing step when the second processing data exceeds the allowable range set based on the target data. A plurality of element chips 20 are fabricated from the m-th substrate. The distance D1 on the mask 30 side between the element chips 20 and the distance D2 on the support member 40 side are both larger than the target value D 0 and exceed the allowable range (D1, D2 ≫ D 0 ). Further, the end face on the support member 40 side of the element chip 20 is recessed inward, and the distance D2 between the element chips 20 is larger than the distance D1. This indicates that the perpendicularity of the end face of the element chip 20 is low.

[0101] Therefore, when patterning the (m + n)-th substrate, the changed second recipe is used. As a result, the patterning width is within the allowable range and becomes a value suitable for subsequent plasma processing. Thus, the shapes of the plurality of element chips become uniform, and the perpendicularity of the end faces is also improved.

[0102] FIG. 12 is a cross-sectional view schematically showing a part of the (m + n)-th substrate patterned using the changed second recipe. The patterning width W is within the allowable range of the target value W 0 (W ≒ W 0 ).

[0103] FIG. 13 is a cross-sectional view schematically showing a part of the (m + n)-th substrate after plasma processing. The distance D1 on the mask 30 side between the element chips 20 and the distance D2 on the side opposite to the mask 30 are both within the allowable range of the target value D 0 (D1, D2 ≒ D 0 ). Further, the difference between the distance D2 and the distance D1 between the element chips 20 is also small (D1 ≒ D2), and the perpendicularity of the end faces of the element chips 20 is improved.

[0104] (Aspect II-b) This aspect is the same as Aspect II-a except that the third processing data regarding the element chip is used. The changed second recipe is fed back to the patterning of the (m + n)-th substrate. FIG. 14 is a flowchart for explaining this aspect.

[0105] In this aspect, after plasma etching, third processing data regarding the fabricated device chip is acquired (ST006). As the third processing data, for example, the distance between adjacent device chips is acquired. The distance between the device chips, which is a measured value, is compared with the distance between the device chips in the target data to determine whether it is acceptable (ST007). If it is not acceptable, the second recipe is changed (ST008). The changed second recipe is used for forming the protective layer on the (m + n)-th substrate. Thereby, the patterning width becomes a value suitable for subsequent plasma processing. Therefore, the distance between the device chips is optimized.

[0106] [Aspect III] In this aspect, it is determined whether to change the third recipe based on the second processing data and / or the third processing data.

[0107] (Aspect III-a) In this aspect, it is determined whether to change the third recipe for controlling the plasma processing step by using the second processing data regarding the mask formed on the m-th substrate. In other respects, Aspect III-a is the same as Aspect I-a. The changed third recipe is fed back to the plasma processing of the (m + n)-th substrate. FIG. 15 is a flowchart for explaining this aspect.

[0108] In this aspect, as the second processing data, for example, the patterning width is acquired and compared with the patterning width in the target data. However, in this aspect, even when the measured patterning width W exceeds the allowable range of the target value W 0 (W ≫ W 0 ), this patterning is allowed and the third recipe is changed. That is, by performing plasma processing under conditions suitable for a wide patterning width, the quality of the device chip is improved.

[0109] However, it is necessary that the device chip manufactured according to the changed third recipe falls within the allowable range of the target data. Therefore, before the plasma treatment for the (m + n)-th substrate is performed, the simulator may be made to calculate prediction data regarding the device chip based on the second processing data and the third recipe to be changed. If the prediction data falls within the allowable range of the target value, the third recipe to be changed is adopted. On the other hand, if the prediction data exceeds the allowable range of the target value, the arithmetic unit is made to generate a recipe that falls within the allowable range of the target value, and the third recipe to be changed is further changed.

[0110] Here, if the deviation amount between the second processing data and the target value is excessively large, such as when the shape of the mask is greatly deviated from the target, the arithmetic unit may not be able to generate a third recipe that falls within the allowable range of the target value. In this case, it is notified by the notification unit or the like that it is not an acceptable patterning. Further, if necessary, the second recipe regarding the mask may be changed. The changed second recipe is fed back to the mask formation of the (m + n)-th substrate. Alternatively, all the masks formed on the m-th substrate may be removed, and the protective layer and the mask may be formed again on the m-th substrate based on the changed second recipe.

[0111] FIG. 16 is a cross-sectional view schematically showing a part of the (m + n)-th substrate that has been plasma-treated based on the changed third recipe. The distance D1 on the mask 30 side between the device chips 20 and the distance D2 on the side opposite to the mask 30 are both approximately the same as the target value D 0 (D1, D2 ≒ D 0 ). Further, the difference between the distance D2 and the distance D1 between the device chips 20 is also small.

[0112] (Aspect III-b) This aspect is the same as Aspect III-a except that the changed third recipe is fed forward to the plasma treatment of the m-th substrate. FIG. 17 is a flowchart for explaining this aspect.

[0113] In this aspect, the third recipe changed based on the second processing data for the m-th substrate is used for plasma processing of the same m-th substrate. Thereby, high-quality element chips can be obtained with a high yield.

[0114] Also in this aspect, similar to Aspect III-a, the patterning width is obtained as the second processing data and compared with the patterning width in the target data. When the patterning width W, which is the measured value, exceeds the allowable range of the target value W 0 (W≫W 0 ), the third recipe is changed. Thereby, plasma processing suitable for a wide patterning width is performed, and the quality of the element chips is improved.

[0115] FIG. 18 is a cross-sectional view schematically showing a part of the N-th substrate that has been plasma processed based on the changed third recipe. Both the distance D1 on the mask 30 side between the element chips 20 and the distance D2 on the side opposite to the mask 30 are approximately the same as the target value D 0 (D1, D2≒D 0 ). Further, the difference between the distance D2 and the distance D1 between the element chips 20 is also small.

[0116] (Aspect III-c) This aspect is the same as Aspect III-a except that the third processing data related to the element chips is used. The changed third recipe is fed back to the plasma processing of the (m + n)-th substrate. FIG. 19 is a flowchart for explaining this aspect.

[0117] In this aspect, as the third processing data, for example, the size and number of voids formed on the end face of the element chip and the inclination angle of the end face are obtained. The measured values of the parameters representing the shape of the end face of these element chips are compared with the above parameters in the target data, and it is determined whether they are acceptable.

[0118] FIG. 20 is a cross-sectional view schematically showing a part of the m-th substrate that has been plasma-treated. The distance D2 between the element chips 20 is smaller than the distance D1, and the perpendicularity of the end faces has deteriorated. Therefore, when plasma-treating the (m + n)-th substrate, a modified third recipe is used. As a result, the plasma treatment is optimized. Thus, the perpendicularity of the end faces is increased.

[0119] As described above, the dicing method according to the present embodiment has been described with specific examples, but the dicing method according to the present embodiment is not limited thereto.

[0120] For example, in each of the above aspects, the case where it is determined whether or not to change the recipe based on either the second processing data or the third processing data has been shown, but the determination method is not limited thereto. Whether or not to change the recipe may be determined based on both the second processing data and the third processing data. For example, even if the difference between the second processing data and the target data is large, if the third processing data is good, it can be determined that changing the recipe is unnecessary. On the other hand, if the second processing data is good but the difference between the third processing data and the target data is large, it can be determined that the recipe needs to be changed.

Industrial Applicability

[0121] According to the control device and the control method of the present invention, since the quality of the obtained element chips is improved, the control device and the control method of the present invention are suitably used for manufacturing various element chips. Although the present invention has been described with respect to the presently preferred embodiments, such disclosure should not be construed in a limiting sense. Various modifications and alterations will no doubt become apparent to those skilled in the art in the technical field to which the present invention pertains upon reading the above disclosure. Therefore, the appended claims are to be construed as including all modifications and alterations without departing from the true spirit and scope of the present invention.

Explanation of Reference Numerals

[0122] 1000A, 1000B, 1000C: Dicing System 100: Control Unit 101: Memory Unit 102: Arithmetic Unit 103: Device Control Unit 200: Protection Layer Forming Device 300: Patterning Device 400: Plasma Processing Device 500: Measuring Device 600: Input Unit 700: Simulator 800: Notification Unit 900: Ordering Unit 10: Substrate 20: Element Chip 30: Mask 40: Support Member D00: Target Data D01: First Processing Data D02: Second Processing Data D03: Third Processing Data DB01: First Database DB02: Second Database

Claims

1. A control device that operates at least one device selected from the group consisting of a protective layer forming device that forms a protective layer on a surface of a substrate, a patterning device that patterns the protective layer to form a mask, and a plasma processing device that plasma etches the substrate exposed from the mask to form a plurality of element chips, based on a recipe defined for each device, A control device that determines whether to change the recipe based on third processing data among the at least one processing data acquired from a measuring device that acquires at least one processing data selected from the group consisting of first processing data regarding the protective layer, second processing data regarding the mask, and third processing data regarding the element chip, and if it is necessary to change the recipe, changes at least one of the recipes, and operates at least one device selected from the group consisting of the protective layer forming device, the patterning device, and the plasma processing device based on the changed recipe.

2. The control device according to claim 1 , wherein the third processing data includes a parameter representing a shape of an end face of the component chip.

3. The control device according to claim 2 , further comprising: a control unit for controlling a plasma processing apparatus that controls a recipe for the plasma processing apparatus when a change in the recipe is required.

4. 2. The control device according to claim 1, wherein the third processing data includes a parameter representing a surface state of a mask that covers the surface of the component chip.

5. The control device of claim 4 , further comprising: a control unit configured to change at least one of the recipes relating to the protective layer forming device and the patterning device if a change in the recipe is required.

6. A control device that operates at least one device selected from the group consisting of a protective layer forming device that forms a protective layer on a surface of a substrate, a patterning device that patterns the protective layer to form a mask, and a plasma processing device that plasma etches the substrate exposed from the mask to form a plurality of element chips, based on a recipe defined for each device, A control device that determines whether to change the recipe based on second processing data among the at least one processing data acquired from a measuring device that acquires at least one processing data selected from the group consisting of first processing data regarding the protective layer, second processing data regarding the mask, and third processing data regarding the element chip, and if it is necessary to change the recipe, changes at least one of the recipes, and operates at least one device selected from the group consisting of the protective layer forming device, the patterning device, and the plasma processing device based on the changed recipe.

7. The control device according to claim 6 , wherein the second processing data includes a patterning width.

8. The controller of claim 7 , further configured to modify the recipe for the patterning device if a modification of the recipe is required.

9. A control device that operates at least one device selected from the group consisting of a protective layer forming device that forms a protective layer on a surface of a substrate, a patterning device that patterns the protective layer to form a mask, and a plasma processing device that plasma etches the substrate exposed from the mask to form a plurality of element chips, based on a recipe defined for each device, determining whether or not to change the recipe based on at least one of the at least one processing data acquired from a measuring device that acquires at least one processing data selected from the group consisting of first processing data related to the protective layer, second processing data related to the mask, and third processing data related to the element chip; if the recipe needs to be changed, changing at least one of the recipes; and operating at least one device selected from the group consisting of the protective layer forming device, the patterning device, and the plasma processing device based on the changed recipe; a control device comprising a calculation unit that calculates a difference between predicted data for the element chip calculated by a simulator based on the second processing data and the recipe for the plasma processing device, and the third processing data.

10. The control device according to claim 9 , further comprising: a notification unit for notifying a time for maintenance of the plasma processing apparatus when the absolute value of the difference is greater than a preset threshold value, the notification unit notifying the time for maintenance of the plasma processing apparatus.

11. operating the protective film forming apparatus to perform a protective layer forming step of forming a protective layer on the surface of the substrate based on the first recipe; operating a patterning device to perform a patterning step of patterning the protective layer to form a mask based on a second recipe; Operate a plasma processing apparatus to perform a plasma processing step of plasma etching the substrate exposed through the mask based on a third recipe to form a plurality of device chips; Operate a measuring device to perform a measuring step of acquiring at least one processing data selected from the group consisting of first processing data on the protective layer, second processing data on the mask, and third processing data on the element chip; a recipe changing step of determining whether or not to change the second recipe based on at least one of the at least one piece of acquired processing data, and changing the second recipe if the second recipe needs to be changed; a feedback step of feeding back the modified second recipe to control of the patterning step.

12. operating the protective film forming apparatus to perform a protective layer forming step of forming a protective layer on the surface of the substrate based on the first recipe; operating a patterning device to perform a patterning step of patterning the protective layer to form a mask based on a second recipe; Operate a plasma processing apparatus to perform a plasma processing step of plasma etching the substrate exposed through the mask based on a third recipe to form a plurality of device chips; Operate a measuring device to perform a measuring step of acquiring at least one processing data selected from the group consisting of first processing data on the protective layer, second processing data on the mask, and third processing data on the element chip; a recipe changing step of determining whether or not to change the third recipe based on at least one of the at least one piece of acquired processing data, and changing the third recipe if the third recipe needs to be changed; a feedback step of feeding back the modified third recipe to control of the plasma processing step.

13. operating the protective film forming apparatus to perform a protective layer forming step of forming a protective layer on the surface of the substrate based on the first recipe; operating a patterning device to perform a patterning step of patterning the protective layer to form a mask based on a second recipe; Operate a plasma processing apparatus to perform a plasma processing step of plasma etching the substrate exposed through the mask based on a third recipe to form a plurality of device chips; operating a measurement device to perform a measurement step of acquiring second processing data relating to the mask; a third recipe changing step of determining whether or not to change the third recipe based on the acquired second processing data, and changing the third recipe if the third recipe needs to be changed; a feedforward step of feeding forward the modified third recipe to control of the plasma processing step.

Images