Cooling device, substrate treatment device, and method for manufacturing article

Abstract

To provide a cooling device that can suppress generation of cavitation.SOLUTION: A cooling device for cooling an object includes: a pump for circulating a first refrigerant; a vaporizer for vaporizing the first refrigerant to cool the object; a condenser for condensing the first refrigerant that is vaporized by the vaporizer; and a pressure control unit for controlling pressure of a first part that is present while the first refrigerant is in a gaseous state in the condenser.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a cooling apparatus, a substrate processing apparatus, and a method for manufacturing an article. [Background technology]

[0002] Substrate processing apparatuses such as pattern forming apparatuses, such as exposure apparatuses, imprint apparatuses, and electron beam lithography apparatuses, or plasma processing apparatuses, such as CVD apparatuses, etching apparatuses, and sputtering apparatuses, have heat generating parts, such as driving mechanisms or members heated by plasma. In order to cool such heat generating parts, the substrate processing apparatuses are provided with cooling devices. The cooling devices remove heat from the heat generating parts and dissipate the heat to the outside of the apparatus, thereby cooling the heat generating parts.

[0003] Patent Document 1 describes a cooling system that includes an evaporator that extracts heat from a component, a condenser, a pump, an accumulator, a heat exchanger, and a temperature sensor. Here, a circuit is configured in which fluid from the pump returns to the pump via the evaporator and condenser, and the accumulator is in fluid communication with the circuit. The heat exchanger transfers heat from and to the fluid in the accumulator. The amount is controlled based on the output of the temperature sensor.

[0004] In the cooling system described in Patent Document 1, in order to stably circulate the fluid in the circuit in which the fluid discharged from the pump returns to the pump via the evaporator and condenser, it is necessary to avoid cavitation at the pump suction. For this purpose, a cooling system must be added to the condenser or downstream or upstream thereof, and the fluid temperature or pressure at the pump suction must be lowered or increased. At the pump outlet, the fluid is pressurized, so that the fluid is sent to the heat generating section in a state in which it is difficult to evaporate. In the heat generating section, evaporative cooling is not performed until the temperature of the fluid rises to the boiling point under the fluid pressure of the heat generating section, so that temperature fluctuations in the heat generating section are allowed during this period, and the members around the heat generating section may be deformed due to thermal expansion. Therefore, in order to suppress temperature fluctuations, a two-phase gas-liquid accumulator is used to change the gas-liquid balance of the fluid by controlling the heat quantity to the accumulator so that the downstream of the heat generating section reaches a predetermined temperature, and the boiling point is controlled by changing the pressure of the entire system. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Patent No. 5313384 Summary of the Invention [Problem to be solved by the invention]

[0006] In the configuration described in Patent Document 1, when the heat generating part generates heat, heat is collected from the accumulator and condensed to lower the pressure in the circulation system, but the pressure in the suction part of the pump also drops, which creates a risk of cavitation. Conversely, when the heat generating part does not generate heat, heat is supplied to the accumulator to vaporize it and increase the pressure in the circulation system.

[0007] In addition, by sealing a gas that has a lower boiling point than the circulating fluid and is less likely to undergo chemical reactions in the gas phase section of the condenser, the pressure at the suction section of the pump can be made higher than the saturated water vapor pressure of the fluid relative to the pressure in the evaporator, thereby suppressing the occurrence of cavitation.

[0008] However, if the enclosed gas dissolves in the fluid or if the gas leaks out of the circulation system, the partial pressure of the enclosed gas changes, which can cause cavitation.

[0009] Therefore, an object of the present invention is to provide a cooling apparatus, a substrate processing apparatus, and a method for manufacturing an article that can suppress the occurrence of cavitation. [Means for solving the problem]

[0010] The cooling device of the present invention is a cooling device that cools an object, and includes a pump that circulates a first refrigerant, an evaporator that cools the object by vaporizing the first refrigerant, a condenser that condenses the first refrigerant vaporized by the evaporator, and a pressure control unit that controls the pressure of a first portion of the condenser where the first refrigerant exists in a gaseous state. Effect of the Invention

[0011] According to the present invention, it is possible to provide a cooling apparatus, a substrate processing apparatus, and a method for manufacturing an article, which are capable of suppressing the occurrence of cavitation. [Brief description of the drawings]

[0012] [Figure 1] FIG. 1 is a diagram showing the configuration of a cooling device according to a first embodiment. [Diagram 2] FIG. 6 is a diagram showing the configuration of a cooling device according to a second embodiment. [Diagram 3] FIG. 1 is a diagram showing an example of the configuration of a substrate processing apparatus. [Figure 4] FIG. 1 is a diagram showing an example of the configuration of a substrate processing apparatus. [Diagram 5] FIG. 1 is a diagram showing an example of the configuration of a substrate processing apparatus. [Figure 6] 1 is a flowchart illustrating the manufacture of a device. [Figure 7] 7 is a detailed flowchart of the wafer process in step 4 of the flowchart shown in FIG. 6. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0013] Hereinafter, the embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a plurality of features, not all of these features are essential to the invention, and the plurality of features may be combined in any manner. Furthermore, in the accompanying drawings, the same reference numbers are given to the same or similar configurations, and duplicated descriptions are omitted. In addition, in the accompanying drawings, the drawings may be drawn at a scale different from the actual scale in order to make the present embodiment easy to understand.

[0014] First Embodiment First, the cooling device according to the first embodiment will be described. FIG. 1 is a diagram showing the cooling device according to the first embodiment. The object cooled by the cooling device CA is not limited to a specific object, but may be, for example, a substrate processing device, particularly a heat generating part of the substrate processing device. The substrate processing device may be, for example, a pattern forming device such as an exposure device, an imprint device, or a charged particle beam lithography device, or a plasma processing device such as a CVD device, an etching device, or a sputtering device. The pattern forming device has a driving mechanism for moving an article such as a substrate or an original at high speed, and the driving mechanism generates heat as the article is driven, and may become a heat generating part. In the plasma processing device, a component such as an electrode is heated by plasma, and the component becomes a heat generating part.

[0015] The cooling device CA may include a first circulation system 1 that circulates the first refrigerant 10 from the condenser 2 through the evaporator 7 and back to the condenser 2, and a cooling unit CD including a heat exchanger 8 arranged in the condenser 2. The first circulation system 1 may include a pump 3 that circulates the first refrigerant 10, a temperature regulator 4 that adjusts the temperature of the first refrigerant 10 by heating or cooling the first refrigerant 10, or a throttle valve 6 that adjusts the pressure of the first refrigerant 10. The condenser 2 has a second portion 201 in which the first refrigerant 10 exists in a liquid state and a first portion 202 in which the first refrigerant 10 exists in a gas state, and at least a part of the heat exchanger 8 (preferably the entire heat exchanger 8) may be arranged in the first portion 202. An object 80 such as a heat generating portion may be cooled by the evaporator 7.

[0016] The first circulation system 1 may be configured to cool the object 80 by utilizing a phase change of the first refrigerant 10. The first circulation system 1 may include, for example, a sensor 5 for measuring the temperature of the first refrigerant 10 in addition to the pump 3, the temperature regulator 4, the throttle valve 6, and the evaporator 7. In FIG. 1, the sensor 5 is disposed between the temperature regulator 4 and the throttle valve 6, but may be disposed between the throttle valve 6 and the evaporator 7. The first circulation system 1 may be a closed circulation system. The first refrigerant 10 in a liquid phase (liquid state) stored in the second part 201 of the condenser 2 may be sent to the temperature regulator 4 by the pump 3. The temperature regulator 4 may adjust the temperature of the first refrigerant 10 so that the temperature of the first refrigerant 10 detected by the sensor 5 disposed downstream of the temperature regulator 4 becomes a target temperature. The temperature regulator 4 may include, for example, an electric heater or a heat exchanger, but is not limited thereto.

[0017] The first refrigerant 10 adjusted to a predetermined temperature can be decompressed by the throttle valve 6 to near the saturated vapor pressure of the first refrigerant 10 at the predetermined temperature and sent to the evaporator 7. The evaporator 7 is in thermal contact with the object 80 or has the object 80 built in, and when the object 80 generates heat, the object 80 can be cooled by the latent heat of vaporization of the first refrigerant 10 boiling in the evaporator 7. The first refrigerant 10 that has passed through the evaporator 7 can be returned to the condenser 2 in a liquid phase state or a gas-liquid mixed phase state (a state including liquid and gas) depending on the heat generation state of the object 80.

[0018] The heat exchanger 8, at least a part of which is disposed in the first portion 202 inside the condenser 2, cools the first refrigerant 10, whereby the first refrigerant 10 in a gaseous state is condensed to become the first refrigerant 10 in a liquid state. The cooling section CD including the heat exchanger 8 may be constituted by, for example, a second circulation system 11 that circulates the second refrigerant 18 through the heat exchanger 8. The second circulation system 11 circulates the second refrigerant 18 independently of the circulation of the first refrigerant 10 in the first circulation system 1. The cooling device CA may include a sensor 9 that detects the pressure or temperature inside (the first portion 202) of the condenser 2. A predetermined amount of gas 50 (first gas) may be sealed inside the condenser 2. The gas 50 may be a gas that has a lower boiling point than the first refrigerant 10 and does not chemically react with the first refrigerant 10. The gas 50 may be, for example, air or CDA (Clean Dry Air), or an inert gas such as nitrogen (N2).

[0019] The second circulation system 11 can be controlled based on the output of the sensor 9 so that the pressure or temperature inside the condenser 2 (first portion 202) becomes a predetermined pressure or temperature. Here, if the pressure of the first refrigerant 10 in the evaporator 7 is controlled to become the saturated vapor pressure at a predetermined temperature, the boiling point of the first refrigerant 10 is controlled. In the case of heat transfer fluid cooling, the temperature of the refrigerant rises by the value obtained by dividing the amount of recovered heat by the heat capacity of the fluid, depending on the amount of recovered heat, but in the case of boiling cooling, heat is recovered by the latent heat of vaporization, so that heat can be recovered at a constant temperature of the boiling point.

[0020] If the first circulation system 1 is a closed system, when the first refrigerant 10 boils (vaporizes), the pressure inside the evaporator 7 and the condenser 2 increases. This means that the saturated vapor pressure of the first refrigerant 10 increases, resulting in a change in the boiling point by dT as shown in the following Clausius-Clapeyron equation. dT = TΔV dP / L Here, dT is the temperature change, T is the state temperature, ΔV is the volume change due to evaporation, dP is the pressure change, and L is the latent heat.

[0021] Gas 50 is charged into condenser 2 in order to maintain first refrigerant 10 inside evaporator 7 at a predetermined temperature and a predetermined saturated vapor pressure. The amount of gas 50 charged into condenser 2 is an amount that makes the differential pressure between the saturated vapor pressure of first refrigerant 10 in evaporator 7 and the saturated vapor pressure of first refrigerant 10 in condenser 2 equal to the partial pressure of gas 50. When there is a height difference between evaporator 7 and condenser 2, the pressure is reduced by a height head ρgh (pressure is increased when h is negative), where ρ is the density of first refrigerant 10, g is the gravitational acceleration, and h is the height of evaporator 7 relative to condenser 2.

[0022] The control in the second circulation system 11 will be described. The second refrigerant 18 used in the second circulation system 11 can be a fluid such as water. The second circulation system 11 can include a second pump 12, a second temperature regulator 13, a second temperature sensor 14, a flow rate control valve 15, a heat exchanger 8, a heat exhauster 16, and a tank 17. The second refrigerant 18 in the tank 17 can be sent to the second temperature regulator 13 by the second pump 12. The second temperature regulator 13 can adjust the temperature of the first refrigerant 10 by heating or cooling the second refrigerant 18 so that the temperature of the second refrigerant 18 detected by the second temperature sensor 14 arranged downstream of the second temperature regulator 13 becomes a predetermined temperature. The second refrigerant 18 heated or temperature-controlled to a predetermined temperature is adjusted to a predetermined flow rate by the flow rate control valve 15 and sent to the heat exchanger 8 to exchange heat with the first refrigerant 10. The first refrigerant 10 is cooled and condensed by the heat exchange with the second refrigerant 18. The heat of the second refrigerant 18 heated by the latent heat of condensation of the first refrigerant 10 can be discharged to the outside of the system by the heat rejector 16 and returned to the tank 17.

[0023] The cooling device CA may include a control unit 90. The control unit 90 may generate control signals C1, C2, and C3 so that the pressure or temperature inside the condenser 2 (first portion 202) of the first circulation system 1 is constant, and may control the second refrigerant 18 by the control signals C1, C2, and C3. The control of the second refrigerant 18 by the control unit 90 may include control of at least one of the temperature, flow rate, and pressure of the second refrigerant 18 supplied to the heat exchanger 8. The control of the second refrigerant 18 by the control unit 90 may be understood as control of the amount of condensation of the first refrigerant 10 in the heat exchanger 8. The control of the second refrigerant 18 by the control unit 90 may include, for example, providing a control signal C1 according to the output of the sensor 9 to the second temperature regulator 13, and controlling the amount of adjustment of the temperature of the second refrigerant 18 by the second temperature regulator 13. The control of the second refrigerant 18 by the control unit 90 may include providing a control signal C2 corresponding to the output of the sensor 9 to the second pump 12, and controlling the output of the second pump 12 to control the flow rate and / or pressure of the second refrigerant 18. The control of the second refrigerant 18 by the control unit 90 may include providing a control signal C3 corresponding to the output of the sensor 9 to the flow rate adjustment valve 15, and controlling the opening degree of the flow rate adjustment valve 15 to control the flow rate and / or pressure of the second refrigerant 18. In other words, the control unit 90 may control at least one of the second pump 12 and the flow rate adjustment valve 15 based on the output of the sensor 9.

[0024] In the first embodiment, the cooling of the first refrigerant 10 by the second circulation system 11 is controlled so that the pressure or temperature inside the condenser 2 becomes a predetermined value while following the heat generation state of the object 80. As a result, the boiling point of the first refrigerant 10 in the evaporator 7 is fixed, and heat can be recovered from the object 80 at a constant temperature. In the first embodiment, the pressure or temperature of the condenser 2 is controlled to the control target value of the cooling unit CD by following or predicting the heat generation state of the object 80, thereby controlling the pressure, i.e., the boiling point, of the evaporator 7, reducing the control delay of the cooling device CA and improving temperature stability. Furthermore, in the first embodiment, when the heat generation state of the object 80 becomes high, efficient heat recovery can be realized by lowering the boiling point of the first refrigerant 10 in the evaporator 7 below the temperature control target temperature of the object 80.

[0025] Here, the cooling section CD is illustrated as being configured to circulate a temperature- and / or flow-controlled refrigerant (second refrigerant 18), but this is merely one example and can be modified as appropriate, for example, it may be a refrigerator that transfers heat using the principle of a heat pump.

[0026] A predetermined amount of gas 50 is sealed inside the condenser 2 (first portion 202), and the total pressure of the first portion 202 is the sum of the partial pressure of the gas 50 and the partial pressure of the first refrigerant 10. Meanwhile, the inside of the evaporator 7 is filled with the first refrigerant 10 and is in a boiling state of a gas-liquid mixture, so that no partial pressure other than that of the first refrigerant 10 occurs, and the total pressure inside the evaporator 7 is the saturated vapor pressure of the first refrigerant 10. By lowering the partial pressure of the first refrigerant 10 in the first portion 202 below the partial pressure (=total pressure) of the first refrigerant 10 in the evaporator 7, the dew point temperature of the first refrigerant 10 in the condenser 2 is lowered by the partial pressure of the gas 50 from the boiling point temperature of the first refrigerant 10 in the evaporator 7.

[0027] Although the first circulation system 1 is a closed circulation system, in reality, the partial pressure of the first refrigerant 10 in the condenser 2 can change over time due to leakage from joints, intrusion of outside air, dissolution of gas 50 in the second part 201, etc. As a result, the difference between the boiling point of the first refrigerant 10 in the evaporator 7 and the dew point in the condenser 2 also changes.

[0028] On the other hand, the pressure or temperature inside the condenser 2 (first portion 202) is controlled to be constant by the cooling section CD. If the total pressure in the first portion 202 is constant, the change in partial pressure of the gas 50 can be detected by the dew point meter 31 as a change in the dew point of the first refrigerant 10. For example, if the partial pressure of the first refrigerant increases due to a leak, the dew point of the first refrigerant 10 also increases. If the partial pressure of the first refrigerant changes in this way, the temperature control of the cooling device CA may become unstable or uncontrollable.

[0029] The partial pressure control means 30 may include a supply valve 32 (supply section) that supplies a gas 50 (first gas) and an exhaust valve 33 (exhaust section) that exhausts a gas 51 (second gas) from the first portion 202. The supply pressure of the gas 50 may be higher than the pressure of the first portion 202. The pressure of the first portion 202 of the condenser 2 is higher than the pressure of the exhaust destination. The supply valve 32 and the exhaust valve 33 may further include an orifice or a needle valve (not shown) to adjust the intake and exhaust amount when the valve is opened. The supply valve 32 and the exhaust valve 33 may also use a mass flow controller or a flow rate adjustment valve to more accurately control the intake and exhaust amount.

[0030] The partial pressure control device PC may include a partial pressure control means 30, a dew point meter 31 (detection unit) arranged inside the condenser 2 (first portion 202), and a second control unit 91. The dew point meter 31 detects the dew point of the first refrigerant 10 in the first portion 202 including the vaporized first refrigerant 10. The second control unit 91 generates a control signal C4 for controlling the supply valve 32 and a control signal C5 for controlling the exhaust valve 33 so that the dew point of the first refrigerant 10 in the first portion 202 falls within a predetermined range. Under the environment of the pressure or temperature of the first portion 202 controlled by the cooling device CA, the supply valve 32 and the exhaust valve 33 can control the partial pressure of the first refrigerant 10 by the control signals C4 and C5. In other words, the partial pressure control means 30 controls the pressure of the first portion 202 so that the dew point of the first refrigerant 10 detected by the dew point meter 31 falls within a predetermined range.

[0031] As described above, in the cooling device according to the first embodiment, the partial pressure of the first refrigerant in first portion 202 can be maintained constant, and therefore the occurrence of cavitation in pump 3 that circulates the first refrigerant can be suppressed.

[0032] <Second embodiment> Next, a cooling device according to a second embodiment will be described. Matters not mentioned as the second embodiment may follow the first embodiment. FIG. 2 is a diagram showing a cooling device according to this embodiment. In the partial pressure control device PC in FIG. 2, the configuration of the partial pressure control means 30 is different from that of the partial pressure control means 30 in the first embodiment. In the first embodiment, it is assumed that the pressure in the first part 202 of the condenser 2 is higher than the atmospheric pressure of the exhaust destination (for example, atmospheric pressure). However, if the pressure in the first part 202 of the condenser 2 is lower than the atmospheric pressure of the exhaust destination, the gas in the first part 202 cannot be exhausted even if the exhaust valve 33 is controlled. Therefore, the partial pressure control means 30 in FIG. 2 may further include an exhaust pump 34 on the exhaust side of the exhaust valve 33. The exhaust pump 34 makes the exhaust side pressure of the exhaust valve 33 lower than the pressure of the first part 202, and can control exhaust with the exhaust valve 33 even if the pressure in the first part 202 is higher than the atmospheric pressure of the exhaust destination. Also, instead of the exhaust valve 33, the configuration may be such that only the exhaust pump 34 is used. In that case, the operation of the exhaust pump 34 is controlled by a control signal C5 from the second control unit 91. In order to adjust the amount of intake and exhaust when the exhaust pump is operated, an orifice and a needle valve (not shown) may further be provided.

[0033] The gas exhausted from the inside (first portion 202) of the condenser 2 contains the first refrigerant 10 gas in accordance with the saturated vapor pressure, and the first refrigerant 10 in the first circulation system 1 decreases as the gas is exhausted in accordance with partial pressure control by the partial pressure control device PC. Therefore, a recovery section 35 may be provided on the exhaust side from the partial pressure control means 30. The recovery section 35 may be, for example, a heat exchanger with a refrigerant having a dew point equal to or lower than the dew point of the first refrigerant 10 at atmospheric pressure, or a condenser using a Peltier element. The first refrigerant 10 condensed and recovered in the recovery section 35 may be returned to the condenser 2 via a liquid delivery means 36 (not shown) such as a pump.

[0034] As described above, in the cooling device according to the second embodiment, the partial pressure of the first refrigerant in first portion 202 can be maintained constant, thereby suppressing the occurrence of cavitation in pump 3 that circulates the first refrigerant. Furthermore, by returning first refrigerant 10 discharged from first circulation system 1 by recovery section 35, it becomes possible to maintain the flow rate of first refrigerant 10 in first circulation system 1, improving the stability of temperature control.

[0035] Hereinafter, a substrate processing apparatus to which the above-mentioned cooling device CA is applied will be described by way of example with reference to FIGS. 3, 4, and 5. FIG. 3 shows a schematic configuration of an exposure apparatus 100 as an example of a substrate processing apparatus, more specifically, a pattern forming apparatus. The exposure apparatus 100 may be configured to transfer a pattern of an original 101 to a photosensitive layer of a substrate 102 having a photosensitive layer by a projection optical system 140. The exposure apparatus 100 may include an illumination optical system 150 that illuminates the original 101, the projection optical system 140, and a substrate positioning mechanism SPM. The exposure apparatus 100 may also include an original positioning mechanism (not shown) that positions the original 101. The substrate positioning mechanism SPM may include a substrate stage 110 having a substrate chuck that holds the substrate 102, a driving mechanism 120 that drives the substrate stage 110, and a base member 130 that supports the driving mechanism 120. The driving mechanism 120 may have an actuator including a mover 1202 that moves together with the substrate stage 110, and a stator 124 fixed to the base member 130. The stator 124 may include a coil array as the target 80. The cooling device CA may be configured to cool the coil array as the target 80.

[0036] 4 shows a schematic configuration of an imprint apparatus 200 as an example of a substrate processing apparatus, more specifically, a pattern forming apparatus. The imprint apparatus 200 may be configured to transfer a pattern of an original 101 to an imprint material on a substrate 102. The imprint apparatus 200 may include an original driving mechanism 160 that drives the original 101, a substrate driving mechanism SPM that drives the substrate 102, and a curing unit 170 that cures the imprint material disposed on the substrate 102.

[0037] At least one of the original driving mechanism 160 and the substrate driving mechanism SPM can align the shot region of the substrate 102 with the pattern region of the original 101. At least one of the original driving mechanism 160 and the substrate driving mechanism SPM can bring the imprint material arranged on the substrate 102 into contact with the pattern region of the original 101 and separate the imprint material from the pattern region. With the imprint material arranged on the substrate 102 in contact with the pattern region of the original 101, the imprint material is cured by the curing unit 170. Thereafter, the cured imprint material is separated from the pattern region of the original 101. As a result, a pattern made of a cured product of the imprint material is formed on the substrate 102. That is, the pattern region of the original 101 is transferred to the imprint material on the substrate 102.

[0038] The substrate positioning mechanism SPM may include a substrate stage 110 having a substrate chuck for holding the substrate 102, a driving mechanism 120 for driving the substrate stage 110, and a base member 130 for supporting the driving mechanism 120. The driving mechanism 120 may have an actuator including a mover 1202 that moves together with the substrate stage 110, and a stator 124 fixed to the base member 130. The stator 124 may include a coil array as the object 80. The cooling device CA may be configured to cool the coil array as the object 80.

[0039] FIG. 5 is a schematic diagram showing the configuration of a plasma processing apparatus 300 as an example of a substrate processing apparatus. The plasma processing apparatus 300 may be, for example, a CVD apparatus, an etching apparatus, or a sputtering apparatus. The plasma processing apparatus 300 may include a chamber 330 and an electrode structure as one or more objects 80a, 80b disposed in the chamber 330. In the example of FIG. 5, the substrate 302 may be supported by the object 80a. A gas for generating plasma may be supplied into the chamber 330. When the plasma processing apparatus 300 is configured as a CVD apparatus, a gas for film formation may be supplied into the chamber 330. When the plasma processing apparatus 300 is configured as an etching apparatus, a gas for etching may be supplied into the chamber 330. When the plasma processing apparatus 300 is configured as a sputtering apparatus, a gas for generating plasma may be supplied into the chamber 330, and a target may be attached to the electrode structure as the object 80b. The cooling apparatus CA may be configured to cool the objects 80a, 80b.

[0040] <Production method> The method for manufacturing an article as one aspect of the present invention may include a step of treating a substrate by a substrate processing apparatus, such as the above-mentioned exposure apparatus 100, imprint apparatus 200, and plasma processing apparatus 300, and a step of processing the substrate processed by the step. The step of treating a substrate by the substrate processing apparatus may be, for example, a step of forming a pattern on the substrate, a step of forming a film on the substrate, or a step of etching the substrate or a film formed thereon. The step of processing the substrate may be, for example, a step of dividing (dicing) the substrate, or a step of sealing the substrate.

[0041] A method for manufacturing an article, such as a device (semiconductor device, magnetic storage medium, liquid crystal display element, etc.), a color filter, or a hard disk, will be described. The manufacturing method includes a step of forming a pattern on a substrate (wafer, glass plate, film-like substrate, etc.) by irradiating the substrate with light using a substrate processing apparatus (e.g., exposure apparatus, etc.) having a cooling device for cooling a heat generating portion. The manufacturing method further includes a step (processing step) of processing the substrate on which the pattern is formed. The processing step may include a step of removing a residual film of the pattern. The processing step may also include a step of etching the substrate using the pattern as a mask. The processing step may also include other well-known steps such as dicing, bonding, and packaging. The manufacturing method of the article in this embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article compared to the conventional method.

[0042] Next, as an example of a method for manufacturing an article, an embodiment of a device manufacturing method using the above-mentioned exposure apparatus will be described with reference to Figures 6 and 7. Figure 6 is a flow chart for explaining the manufacture of devices (semiconductor chips such as ICs and LSIs, LCDs, CCDs, etc.). Here, a method for manufacturing semiconductor chips will be described as an example.

[0043] In step S1 (circuit design), the circuit of the semiconductor device is designed. In step S2 (mask production), a mask (master) is produced based on the designed circuit pattern. In step S3 (wafer production), a wafer (substrate) is produced using a material such as silicon. Step S4 (wafer process) is called the pre-process, in which the mask and wafer are used to form an actual circuit on the wafer using lithography technology with the exposure device described above. Here, the exposure device forms a circuit pattern on the wafer by illuminating the master on which the circuit pattern is formed and projecting an image of the circuit pattern of the master onto the wafer. Step S5 (assembly) is called the post-process, in which the wafer produced in step S4 is used to make a semiconductor chip, and includes assembly processes such as assembly processes (dicing, bonding) and packaging processes (chip encapsulation). In step S6 (inspection), the semiconductor device produced in step S5 is inspected, such as an operation confirmation test and a durability test. After going through these processes, the semiconductor device is completed and shipped (step S7).

[0044] FIG. 7 is a detailed flowchart of the wafer process in step S4. In step S11 (oxidation), the surface of the wafer is oxidized. In step S12 (CVD), an insulating film is formed on the surface of the wafer. In step S13 (electrode formation), electrodes are formed on the wafer by deposition. In step S14 (ion implantation), ions are implanted into the wafer. In step S15 (resist processing), a photosensitive agent is applied to the wafer. In step S16 (exposure), the circuit pattern of the mask is exposed onto the wafer by an exposure device. In step S17 (development), the exposed wafer is developed. In step S18 (etching), the parts other than the developed resist image are scraped off. In step S19 (resist stripping), the resist that is no longer needed after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

[0045] Although the preferred embodiments of the present invention have been described above, it goes without saying that the present invention is not limited to these embodiments, and various modifications and changes are possible within the scope of the gist of the present invention.

[0046] In addition, although an exposure apparatus, an imprint apparatus, and a plasma processing apparatus have been described as examples of the substrate processing apparatus, the present invention is not limited to these. An example of the substrate processing apparatus may be a planarization apparatus that performs a process of forming a composition on a substrate so as to planarize the composition by using a mold (flat template) having a flat portion without a concave-convex pattern. An example of the substrate processing apparatus may be a drawing apparatus that performs a process of drawing a substrate with a charged particle beam (such as an electron beam or an ion beam) via a charged particle optical system to form a pattern on the substrate.

[0047] <Summary of the embodiment> The disclosure of the present specification includes the following cooling apparatus, substrate processing apparatus, and method for manufacturing an article.

[0048] (Item 1) A cooling device for cooling an object, comprising: A pump that circulates the first refrigerant; an evaporator that cools the object by vaporizing the first refrigerant; a condenser that condenses the first refrigerant vaporized by the evaporator; A pressure control unit that controls the pressure of a first portion in the condenser where the first refrigerant exists in a gaseous state. A cooling device characterized by:

[0049] (Item 2) a detector disposed in the first portion and detecting a dew point of the first refrigerant in the first portion; The pressure control unit controls the pressure so that the dew point of the first refrigerant detected by the detection unit falls within a predetermined range. 2. The cooling device according to item 1,

[0050] (Item 3) The pressure control unit has a supply unit that supplies a first gas to the first portion and an exhaust unit that exhausts a second gas from the first portion. 3. The cooling device according to item 1 or 2,

[0051] (Item 4) The exhaust unit has an exhaust pump for exhausting the second gas. 4. The cooling device according to item 3, characterized in that

[0052] (Item 5) The pressure control unit has a recovery unit that recovers the vaporized first refrigerant contained in the second gas from the second gas. 5. The cooling device according to item 3 or 4,

[0053] (Item 6) A temperature regulator that adjusts the temperature of the first refrigerant is provided. 6. The cooling device according to any one of items 1 to 5,

[0054] (Item 7) A throttle valve is provided to adjust the pressure of the first refrigerant. 7. The cooling device according to any one of items 1 to 6,

[0055] (Item 8) A sensor for measuring a temperature of the first refrigerant is provided. 8. The cooling device according to any one of items 1 to 7,

[0056] (Item 9) A heat exchanger is disposed in the condenser, and a cooling unit is provided to cool the first refrigerant. 9. The cooling device according to any one of items 1 to 8,

[0057] (Item 10) A substrate processing apparatus for processing a substrate, A heat generating unit that generates heat; The cooling device according to any one of items 1 to 9, The cooling device is configured to cool the heat generating portion by vaporizing the first refrigerant with heat from the heat generating portion. The substrate processing apparatus according to claim 1,

[0058] (Item 11) Processing a substrate using the substrate processing apparatus according to item 10; processing the treated substrate; and producing an article from the processed substrate. A method for producing an article comprising the steps of:

Claims

1. A cooling device for cooling an object, comprising: A pump that circulates the first refrigerant; an evaporator that cools the object by vaporizing the first refrigerant; a condenser that condenses the first refrigerant vaporized by the evaporator; a pressure control unit for controlling a pressure of a first portion in the condenser where the first refrigerant exists in a gaseous state, A cooling device characterized by:

2. a detector disposed in the first portion and detecting a dew point of the first refrigerant in the first portion; The pressure control unit controls the pressure so that the dew point of the first refrigerant detected by the detection unit falls within a predetermined range.

2. The cooling device according to claim 1 .

3. The pressure control unit has a supply unit that supplies a first gas to the first portion and an exhaust unit that exhausts a second gas from the first portion.

2. The cooling device according to claim 1.

4. The exhaust unit has an exhaust pump for exhausting the second gas.

4. The cooling device according to claim 3.

5. The pressure control unit has a recovery unit that recovers the vaporized first refrigerant contained in the second gas from the second gas.

4. The cooling device according to claim 3.

6. A temperature regulator that adjusts the temperature of the first refrigerant is provided.

2. The cooling device according to claim 1 .

7. A throttle valve for adjusting the pressure of the first refrigerant is provided.

2. The cooling device according to claim 1 .

8. A sensor for measuring a temperature of the first refrigerant.

2. The cooling device according to claim 1.

9. A heat exchanger is disposed in the condenser, and a cooling unit is provided to cool the first refrigerant.

2. The cooling device according to claim 1.

10. A substrate processing apparatus for processing a substrate, A heat generating unit that generates heat; The cooling device according to claim 1, The cooling device is configured to cool the heat generating portion by vaporizing the first refrigerant with heat from the heat generating portion. The substrate processing apparatus according to claim 1,

11. A step of processing a substrate using the substrate processing apparatus according to claim 10; processing the treated substrate; and producing an article from the processed substrate. A method for producing an article.

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