Substrate processing apparatus

Abstract

To provide a structure to stabilize the temperature of a shield member in a processing container.SOLUTION: A substrate processing apparatus includes a processing container, a temperature adjustment structure including a flow path inside a sidewall of the processing container, a shield member installed in the processing container so as to be adjacent to the flow path, a conductive member installed between the shield member and the sidewall in which the flow path is located, a buffer member having conductivity and interposed between the shield member and the conductive member, and a plurality of fixing members installed between the sidewall and the conductive member, having elasticity and conductivity, and configured to fix the conductive member so that the conductive member is pressed against the shield member.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus. [Background technology]

[0002] Patent Document 1 provides a vacuum processing apparatus capable of cooling a movable adhesion-prevention plate provided in a vacuum chamber with a simple configuration. The vacuum processing apparatus further includes a metal block body erected on an inner wall surface of the vacuum chamber and a cooling means for cooling the block body, and the top surface of the block body is in close proximity to or in contact with the movable adhesion-prevention plate at a processing position of the movable adhesion-prevention plate where a predetermined vacuum processing is performed on a substrate to be film-formed.

[0003] Patent Document 2 provides a shield cooling assembly including an adapter configured to secure a shield in a chamber, the adapter being provided with a cooling passage for delivering a coolant to cool the shield, the shield cooling assembly improving heat transfer efficiency and process quality. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Patent No. 7057442 [Patent Document 2] Special Publication No. 2022-518518 Summary of the Invention [Problem to be solved by the invention]

[0005] The present disclosure provides a substrate processing apparatus having a structure for stabilizing the temperature of a shield member within a processing vessel. [Means for solving the problem]

[0006] According to one aspect of the present disclosure, there is provided a substrate processing apparatus comprising: a processing vessel; a temperature adjustment structure having a flow path inside a sidewall of the processing vessel; a shielding member provided within the processing vessel so as to be close to the flow path; a conductive member provided between the sidewall where the flow path is located and the shielding member; a conductive buffer member sandwiched between the shielding member and the conductive member; and a plurality of fixing members provided between the sidewall and the conductive member, having elasticity and conductivity, and fixing the conductive member so as to press it against the shielding member. Effect of the Invention

[0007] According to one aspect, the temperature of the shield member in the processing vessel can be stabilized. [Brief description of the drawings]

[0008] [Figure 1] 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus according to an embodiment; [Diagram 2] FIG. 4 is a schematic cross-sectional view showing an example of a structure around a shield member according to an embodiment. [Diagram 3] FIG. 13 is a schematic cross-sectional view showing an example of a structure around a conventional shielding member. [Figure 4] Cross section AA of Figure 1. [Diagram 5] FIG. 11 is a schematic cross-sectional view showing an example of a structure around a shield member according to a modified example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and duplicated descriptions may be omitted.

[0010] [Substrate processing equipment] A substrate processing apparatus 1 according to an embodiment will be described with reference to Fig. 1 and Fig. 2. Fig. 1 is a schematic cross-sectional view showing an example of the substrate processing apparatus 1 according to an embodiment. Fig. 2 is a schematic cross-sectional view showing an example of a structure 200 around a shield member according to an embodiment.

[0011] The substrate processing apparatus 1 is a PVD (Physical Vapor Deposition) sputtering apparatus (film formation apparatus), and is a magnetron sputtering apparatus having a cathode 2 as a sputtering source on a ceiling portion (lid) of a processing chamber 10.

[0012] The substrate processing apparatus 1 has a processing vessel 10 and a mounting table 20. The mounting table 20 has a mounting surface 20a on which a substrate W such as a semiconductor wafer is placed. The cathode unit 2 is located above the mounting table 20 and configured to sputter a target T installed on the ceiling. Sputtered particles (film-forming atoms) emitted from the target T adhere (deposit) on the surface of the substrate W placed on the mounting table 20, thereby performing a film formation process on the substrate W. A processing space 10s is defined by the sidewall 10a of the processing vessel 10, the ceiling, and the mounting table 20.

[0013] The cathode unit 2 has a substantially pyramidal shape (e.g., substantially quadrangular pyramidal shape, circular cone shape, etc.) on the ceiling. The central axis Ax is located at the center of the processing vessel 10, passes through the top of the ceiling, extends in the vertical direction, and is set to pass through the center of the mounting table 20. The center of the mounting surface 20a of the mounting table 20 coincides with the central axis Ax. The mounting table 20 is supported on the bottom of the processing vessel 10 by a support. The mounting table 20 may be configured to be rotatable by a rotation device (not shown).

[0014] The processing vessel 10 is made of, for example, aluminum. The processing vessel 10 is connected to a ground potential. That is, the processing vessel 10 is grounded. The processing vessel 10 has a loading / unloading port that communicates the processing space 10s with the outside of the processing vessel 10, and a gate valve that opens and closes the loading / unloading port (neither is shown). When the gate valve is open, the substrate processing apparatus 1 loads and unloads the substrate W through the loading / unloading port by a transfer device (not shown). In addition, an exhaust device (not shown) such as a vacuum pump evacuates the processing vessel 10 so that the processing space 10s is in a desired vacuum (reduced pressure) state.

[0015] The upper part of the processing vessel 10 has a cathode section 2 that is provided facing the mounting table 20 and is configured to sputter a plurality of targets T. The cathode section 2 has a target holding section 130, a target cover section 140, a gas supply section 150, and a magnet mechanism section 170. The target holding section 130 holds a plurality of targets T, which are cathode targets, at a position spaced above the mounting table 20. The substrate processing apparatus 1 shown in FIG. 1 has two target holding sections 130. However, the number of targets T may be two or more, and may be, for example, four targets T.

[0016] The target holding unit 130 has metal holders 131 that hold the multiple targets T, and insulating members 132 that support the holders 131 by fixing their outer peripheries.

[0017] The targets T held by each of the holders 131 are formed of a material having a substance for film formation. Each of the targets T has a rectangular flat plate shape. The substrate processing apparatus 1 may also include targets T made of different types of materials. For example, a multilayer film can be formed in the processing vessel 10 by switching between targets T made of multiple different materials and performing sputtering. In other words, the substrate processing apparatus 1 may perform simultaneous sputtering (co-sputtering) in which multiple targets are simultaneously formed into films. The substrate processing apparatus 1 according to one embodiment forms a silicon (Si) film or the like on a substrate W as an example of a film formation process.

[0018] Each of the holders 131 is formed in a rectangular shape that is slightly larger than the target T in a plan view. Each of the holders 131 is fixed to the inclined surface of the ceiling portion via an insulating member 132. Since each of the holders 131 is fixed to the inclined surface of the ceiling portion, each of the holders 131 holds the surfaces of the multiple targets T (sputtering surfaces exposed to the processing space 10s) in a state inclined with respect to the central axis Ax.

[0019] The power supply connected to the cathode section 2 may be either a DC (direct current) power supply or an RF (radio frequency) power supply, or may be a DC power supply and an RF power supply, but is not limited thereto. When the power supply connected to the cathode section 2 is only a DC power supply, the magnet 171 uses a DC magnet to perform sputtering. When the power supplies connected to the cathode section 2 are a DC power supply and an RF power supply, the magnet 171 uses a PCM (Point-Cusp-Magnetic Field) magnet to activate ionized particles and perform sputtering.

[0020] The target holding unit 130 electrically connects a DC power supply 133 to the targets T held by each of the holders 131. Each of the multiple DC power supplies 133 applies a negative DC voltage to the connected target T. Note that the DC power supply 133 may be a single power supply that selectively applies a voltage to each of the multiple targets T.

[0021] A metallic target shield (adhesion prevention shield) 135 is provided to surround the target T held by the holder 131. The target shield 135 has an opening through which the target T is exposed, and is fixed to the inclined surface of the pyramidal portion 113 via an insulating member 132. That is, the insulating member 132 is provided between the processing vessel 10 connected to the ground potential and the target shield 135. As a result, the target shield 135 is not electrically connected to the processing vessel 10, and can be at a potential different from the ground potential. The target shield 135 and the holder 131 are not electrically connected to each other.

[0022] Further, an RF (Radio Frequency) power supply 137 is connected to the target shield 135 via an impedance matching device 136. One end of the RF power supply 137 is connected to a ground potential, and the other end is connected to the impedance matching device 136. The RF power supply 137 supplies weak RF power to the target shield 135 via the impedance matching device 136. Here, the RF power supplied by the RF power supply 137 has a frequency in the range of, for example, 400 kHz or more and 100 MHz or less, and is preferably 50 W or more and 10 kW or less.

[0023] The impedance matching device 136 is provided between the RF power supply 137 and the target shield 135. Here, sputtered particles of a high-resistance material emitted from the target T adhere to the substrate W to form a film, and also adhere to the target shield 135 to form a high-resistance film on the surface of the target shield 135. The impedance matching device 136 performs impedance matching so that the electrical resistance of the target shield 135 and the high-resistance film formed on the target shield 135 is reduced (or becomes approximately zero) in an electric circuit in which a current (electrons) flows from the plasma to a set potential.

[0024] The magnet mechanism 170 applies a magnetic field to each of the targets T. By applying a magnetic field to each of the targets T, the magnet mechanism 170 induces plasma in the targets T. The magnet mechanism 170 has a magnet 171 (cathode magnet) for each of the multiple holders 131, and an operating unit 172 that operably holds the magnet 171. That is, the magnet 171 can be driven by the operating unit 172. In the example of FIG. 1, the magnet mechanism 170 has two magnets 171 and two operating units 172 that hold the two magnets 171, respectively, corresponding to the two holders 131.

[0025] The magnets 171 are formed in the same shape. Moreover, the magnets 171 generate magnetic forces of the same degree. Specifically, the magnets 171 are substantially rectangular in plan view. In a state held by the operating unit 172, the long sides of the magnets 171 extend parallel to the short side direction of the rectangular target T, while the short sides of the magnets 171 extend parallel to the longitudinal direction of the rectangular target T.

[0026] A permanent magnet can be applied to each of the magnets 171. The material constituting each of the magnets 171 is not particularly limited as long as it has an appropriate magnetic force, and examples of the material include iron, cobalt, nickel, samarium, and neodymium.

[0027] The operating units 172 that hold the magnets 171 respectively reciprocate the held magnets 171 along the longitudinal direction of the target T. That is, the magnets 171 are provided movably. Furthermore, the operating units 172 that hold the magnets 171 respectively move the held magnets 171 closer to and away from the target T. Specifically, each of the operating units 172 has a reciprocating mechanism 174 that holds the magnets 171 and reciprocates the magnets 171, and a contact / separation mechanism 175 that holds the reciprocating mechanism 174 and moves the reciprocating mechanism 174 closer to and away from the target T.

[0028] The target covering portion 140 includes a second shielding member 141 disposed in the processing vessel 10 and a supporting portion 142 that operably supports the second shielding member 141.

[0029] The second shield member 141 is provided between the multiple targets T and the mounting table 20. The second shield member 141 is formed in a cone shape that is approximately parallel to the inclined surface of the ceiling of the processing vessel 10. The second shield member 141 can face the sputtering surfaces of the multiple targets T. The second shield member 141 also has an opening 141a corresponding to the target T. The opening 141a is an opening that is slightly larger than the target T, and moves when the second shield member 141 rotates.

[0030] The opening 141a is disposed to face one target T (selected target Ts) of the multiple targets T by rotation of the support part 142. By disposing the opening 141a to face the selected target Ts, the second shield member 141 exposes only the selected target Ts to the substrate W on the mounting table 20. The second shield member 141 prevents the other targets T (non-selected targets) from being exposed.

[0031] The support part 142 has a columnar rotating shaft 143 and a rotating part 144 that rotates the rotating shaft 143. The axis of the rotating shaft 143 overlaps with the central axis Ax of the processing vessel 10. The rotating shaft 143 extends along the vertical direction, and fixes the center (apex) of the second shield member 141 at its lower end. The rotating shaft 143 penetrates the center of the ceiling part and protrudes to the outside of the processing vessel 10.

[0032] The rotating unit 144 is provided outside the processing vessel 10, and rotates the rotating shaft 143 relatively to the upper end connector 155a that holds the rotating shaft 143 via a rotation transmission unit (not shown). This causes the rotating shaft 143 and the second shield member 141 to rotate around the central axis Ax. Therefore, the target cover 140 can adjust the circumferential position of the opening 141a to face the selected target Ts to be sputtered.

[0033] In the substrate processing apparatus 1, the target covering section 140 is used to perform sputtering while switching between the two targets. However, the target covering section 140 may not be provided and the two targets may be sputtered simultaneously.

[0034] The gas supply unit 150 supplies an excitation gas from a connector 155a and a gas inlet that penetrates the rotation shaft 143. The gas supply unit 150 has a pipe 152 that distributes gas outside the processing vessel 10. The gas supply unit 150 also has, in this order from the upstream side to the downstream side of the pipe 152, a gas source 153, a flow rate controller 154, and a gas inlet.

[0035] The gas source 153 stores an excitation gas (e.g., argon gas). The gas source 153 supplies the gas to the pipe 152. The flow rate controller 154 is, for example, a mass flow controller, and adjusts the flow rate of the gas supplied into the processing vessel 10. The gas introduction unit introduces the gas from the outside to the inside of the processing vessel 10.

[0036] A gas exhaust unit (not shown) of the substrate processing apparatus 1 includes a vacuum pump and an adapter for fixing the vacuum pump to the bottom of the processing vessel 10. The gas exhaust unit reduces the pressure in the processing space 10s of the processing vessel 10.

[0037] The control unit 100 is made up of a computer and has a CPU, an input device, an output device, a display device, a memory, etc. The CPU calls up a predetermined processing recipe stored in the memory or other storage medium, and causes the substrate processing apparatus 1 to perform a sputtering process based on the processing recipe.

[0038] [Conventional shielding materials] In the substrate processing apparatus 1, during process steps such as film formation, a film adheres to the inside of the processing vessel 10 in addition to the substrate W. In order to prevent contamination and particles from the adhered film from affecting the device characteristics on the substrate W and to suppress particle generation, an adhesion prevention plate called a shield member has conventionally been provided inside the processing vessel 10.

[0039] However, during the process, the heat from the plasma generated in the processing space 10s can cause the shielding material to warp or become distorted due to thermal degradation, which can then cause the attached film to peel off due to the stress characteristics (film stress) of the material of the shielding material, resulting in a recurrence of causes such as contamination and particles.

[0040] Therefore, in order to avoid the thermal influence inside the processing vessel 10, a cooling structure such as a cooling channel has been conventionally provided inside the wall of the processing vessel 10 or inside the mounting table 20. FIG. 3 is a cross-sectional schematic diagram showing an example of a conventional cooling structure 500.

[0041] 3, a shield member 401 is provided on the outer periphery of the shield members 21 and 22 that protect the mounting table 20. The shield member 401 is provided between the side wall 10b of the processing vessel 10 and the mounting table 20 so as to partition a processing space 10s above the mounting table 20 and an exhaust space below the mounting table 20. The shield member 401 has a cylindrical side portion, an upper portion extending outward at the upper end of the side portion, and a lower portion extending inward at the lower end of the side portion. The upper portion of the shield member 401 is screwed to a metal shaft 402 that extends vertically from the bottom of the processing vessel 10 by a screw 403, thereby fixing the shield member 401.

[0042] A cooling structure 500 is provided inside the side wall 10b. The cooling structure 500 has a flow path 500a in proximity to the shield member 401. The flow path 500a has an inlet 500b1 and an outlet 500b2 connected to a chiller unit (not shown). The flow path 500a is formed in a ring shape around the entire circumference of the side wall 10b. A temperature control medium such as water or Galden, which is controlled to a predetermined temperature, flows into the flow path 500a from the inlet 500b1, flows through the flow path 500a around the entire circumference of the side wall 10b, flows out from the outlet 500b2, and returns to the chiller unit. In this way, the cooling structure 500 removes heat from the shield member 401 through the shaft 402 by the temperature control medium circulating through the flow path 500a, and suppresses a temperature rise of the shield member 401.

[0043] In this method, the shield member 401 is heated by discharge and plasma generation during the process, and cooled by plasma extinction after the process. This causes film peeling due to film stress caused by thermal expansion and contraction. In addition, there is concern that the film attached to the screw 403 may peel off and affect maintainability because the screw 403 protrudes into the processing space 10s (discharge space).

[0044] On the other hand, there is a method in which the shielding material is pre-heated before processing, thereby mitigating the temperature rise of the shielding material even when heat is input from the plasma during the processing step, suppressing temperature changes of the shielding material, and keeping the temperature as constant as possible.

[0045] However, depending on the film-forming material, the film stress may increase, and the film may be exposed to plasma and peel off from the shielding material. Depending on the properties of the film material, the amount of film peeling may increase, making it impossible to suppress particle generation.

[0046] Therefore, it is important to prevent the film from peeling off during the process. Also, when fixing the shielding member, it is important to prevent the plasma from concentrating on the protrusions due to the screw head being exposed in the processing space 10s (discharge space) and causing abnormal discharge.

[0047] However, the method of increasing the number of temperature control structures is not realistic because it adds complex structures to the device, which increases processing and recycling costs and complicates the balance of the volume of the processing vessel 10 and maintenance.

[0048] [Shielding member of this embodiment] 1 and 2, the present embodiment proposes a structure within the processing vessel 10 that allows the shield member 23 to always maintain a constant temperature during idling and during the process steps. In the cooling structure 300 according to the present embodiment, the temperature of the shield member 23 is maintained at room temperature as much as possible during idling and during the process steps, and the temperature of the shield member 23 within the processing vessel 10 is stabilized.

[0049] In addition, in this embodiment, it is not necessary to add any additional cooling structure, the structure can be simplified, processing and recycling costs can be reduced, and maintainability can be improved. Furthermore, in this embodiment, it is not necessary to provide protrusions such as screws for fixing the shield member to the cooling structure, so abnormal discharge can be prevented and particle generation can be suppressed.

[0050] Hereinafter, the cooling structure 300 according to this embodiment and the structure 200 around the shield member 23 will be mainly described with reference to Figs. 1 and 2. Three shield members 21, 22, and 23 are arranged between the mounting table 20 and the side wall 10a. The shield members 21, 22, and 23 are made of, for example, aluminum. The shield member 21 is fixed to the outer periphery of the mounting table 20 and surrounds the periphery of the substrate on the mounting table 20. The shield member 22 is fixed to the outermost periphery of the mounting table 20 and is provided so as to cover the outermost periphery and side of the mounting table 20. The shield member 22 is located below the shield member 21 and overlaps the shield member 21 in a plan view. The shield members 21 and 22 are annular or cylindrical.

[0051] The shield members 21 and 22 protect the mounting table 20 and prevent a film from adhering to the upper and side surfaces of the mounting table 20. The shield members 21 and 22 can be directly installed and fixed to the mounting table 20, so that temperature change is small and film peeling is unlikely to occur. In contrast, the shield member 23 cannot be directly installed in the processing vessel 10 because the screw heads are exposed to the processing space 10s, which may cause particles to be generated. Therefore, the substrate processing apparatus 1 has a cooling structure 300 and a structure 200 around the shield member 23 to improve the cooling efficiency of the shield member 23 and prevent the generation of particles.

[0052] The shield member 23 is disposed near the sidewall 10a of the processing vessel 10. A cooling structure 300 having a flow path 300a is provided inside the sidewall 10a of the processing vessel 10. The sidewall 10a protrudes from the bottom of the processing vessel 10 to approximately the center of the sidewall 10a all around, and is thicker than the upper part of the sidewall. The cooling structure 300 provides the flow path 300a in the protruding portion of the sidewall 10a so as to be close to the shield member 23. This increases the volume of the flow path 300a and increases the flow rate of the temperature control medium flowing through the flow path 300a, thereby improving the cooling efficiency.

[0053] The flow path 300a has an inlet 300b1 and an outlet 300b2 connected to a chiller unit (not shown). The flow path 300a is formed in a ring shape around the entire circumference of the side wall 10a. A temperature control medium such as water or Galden controlled at a predetermined temperature flows into the flow path 300a from the inlet 300b1, flows through the flow path 300a around the entire circumference of the side wall 10a, flows out from the outlet 300b2, and returns to the chiller unit. The cooling structure 300 has the flow path 300a inside the side wall 10a of the processing vessel 10, and is an example of a temperature control structure that controls the temperature of the shield member 23. The temperature control here includes both cooling and heating.

[0054] In this way, in the cooling structure 300, the flow path 300a is positioned close to the shield member 23, the flow path 300a is formed around the entire circumference of the shield member 23, and a relatively large flow rate of the temperature control medium flows through the flow path 300a. This makes it possible to improve the cooling efficiency of the shield member 23.

[0055] 1, a structure 200 around the shield member 23 includes a fixing member 201, a conductive member 202, and a buffer member 203. The fixing member 201 includes a first elastic member 204 and a second elastic member 205.

[0056] 2, the shield member 23 and its surrounding structure 200 will be further described. The shield member 23 has a cylindrical side portion 23a and an upper portion 23b extending outward (toward the side wall 10a) from the upper end of the side portion 23a over the entire periphery, and is configured so that the multiple fixing members 201 are not exposed in the processing space 10s.

[0057] Furthermore, the shield member 23 has a lower portion 23c extending inward (toward the mounting table 20) from the lower end of the side portion 23a along the entire circumference. As a result, the shield member 23 is provided to partition the processing space 10s between the side wall 10a and the mounting table 20 and an exhaust space below the mounting table 20. That is, the shield member 23 is a cylindrical member having a substantially S-shaped cross section in the circumferential direction. Note that the shield member 23 does not need to have the lower portion 23c. In this case, the shield member 23 is a cylindrical member having a substantially L-shaped cross section in the circumferential direction.

[0058] The conductive member 202 is provided between the side wall 10a where the flow path 300a is located and the shield member 23. The conductive member 202 is a plate made of copper. However, the conductive member 202 is not limited to copper, and may be made of any metal such as gold or aluminum as long as the material has good thermal conductivity.

[0059] The conductive member 202 has a cylindrical side portion 202a and an upper portion 202b extending from the upper end of the side portion 202a to the outside (side wall 10a side) over the entire circumference. That is, the conductive member 202 is a cylindrical member having a substantially L-shaped cross section in the circumferential direction. The side portion 202a faces a side surface 10a1 on which the flow path 300a of the side wall 10a is located. The upper portion 202b is disposed so as to contact the upper surface 10a2 of the side wall 10a at the tip side.

[0060] The buffer member 203 is sandwiched between the shield member 23 and the conductive member 202. The buffer member 203 is conductive and made of a material softer than the shield member 23 and the conductive member 202. The buffer member 203 is a sheet-like member made of, for example, carbon. However, the material of the buffer member 203 is not limited to carbon as long as it is softer than the conductive member 202, and metals such as indium can be used. Whether the buffer member 203 is made of a material softer than the conductive member 202 can be determined based on the Young's modulus of each constituent material, etc.

[0061] The buffer member 203 has a cylindrical side portion 203a and an upper portion 203b extending from the upper end of the side portion 203a to the outside (side wall 10a side) over the entire circumference. That is, the buffer member 203 is a cylindrical member having a substantially L-shaped cross section in the circumferential direction. The side portion 203a faces the side surface 10a1 on which the flow path 300a of the side wall 10a is located via the side portion 202a of the conductive member 202. The upper portion 203b is disposed on the upper surface 10a2 of the side wall 10a on the tip side via the upper portion 202b of the conductive member 202. As a result, the upper portion of the shield member 23 contacts the upper surface 10a2 of the side wall 10a via the conductive member 202 and the buffer member 203, and is grounded.

[0062] The conductive member 202 covers the entire outer surface 23a1 of the side portion 23a and the lower surface 23b1 of the upper portion 23b of the shield member 23 with the buffer member 203 sandwiched therebetween. If the shield member 23 and the conductive member 202 are in direct contact with each other, friction between the metals will cause metal particles to be generated. In addition, the thermal conductivity will decrease due to the difference in surface roughness between the shield member 23 and the conductive member 202. In response to this, by sandwiching the buffer member 203, which is softer than these metals, between the shield member 23 and the conductive member 202, it is possible to suppress the generation of metal particles due to friction. In addition, it is possible to increase the adhesion between the shield member 23 and the conductive member 202 and increase the thermal conductivity. This allows efficient heat transfer from the conductive member 202 to the shield member 23, and the shield member 23 can be stably maintained at a constant temperature.

[0063] A plurality of fixing members 201 are provided between the side wall 10a and the conductive member 202. The fixing members 201 are elastic and conductive, and fix the conductive member 202 to the shield member 23 in a manner that presses the conductive member 202 against the shield member 23.

[0064] In this embodiment, three fixing members 201 are provided side by side in the vertical direction. That is, the fixing member 201 has a set of fixing parts, including an upper fixing part 201a, a lower fixing part 201c located below the upper fixing part 201a, and an intermediate fixing part 201b located between the upper fixing part 201a and the lower fixing part 201c, which are provided at positions overlapping each other in a plan view.

[0065] Fig. 4 is a diagram showing a cross section taken along line AA in Fig. 1. A flow path 300a is provided around the entire periphery inside the side wall 10a. In addition, a shielding member 23 is provided around the entire periphery near the flow path 300a via a conductive member 202 and a buffer member 203.

[0066] 4, the fixing member 201 is composed of four sets of fixing parts, and the four sets of fixing parts are arranged in the circumferential direction along the side wall 10a. However, the number of sets of fixing parts is not limited to four, and may be any number as long as it is plural. It is preferable that the fixing parts are arranged evenly in the circumferential direction in order to increase thermal conduction and reduce temperature change of the shield member 23.

[0067] Each of the fixing parts (upper fixing part 201a, middle fixing part 201b, and lower fixing part 201c in FIG. 2) has a plurality of first elastic members 204 (204a, 204b, 204c) arranged in a radial direction toward the central axis Ax of the processing vessel 10, and a hollow second elastic member 205 (205a, 205b, 205c) formed to accommodate the plurality of first elastic members therein. The first elastic member 204 is made of a metal such as aluminum, stainless steel, or inconel. The second elastic member 205 is not limited to copper, and may be a metal such as gold or aluminum as long as it is a material with good thermal conductivity. It is preferable that the second elastic member 205 is made of the same material as the conductive member 202, as this has good thermal conductivity.

[0068] The first elastic members 204a, 204b, and 204c are metal springs formed in a spiral shape. However, the first elastic members 204a, 204b, and 204c are not limited to springs and may be elastic members such as leaf springs as long as they are configured to generate a pressing force for the conductive member 202 against the shield member 23. The second elastic members 205a, 205b, and 205c are formed by rolling a thin sheet of, for example, about 0.2 mm to 0.5 mm into a circular cross section and joining both ends to form a hollow annular member.

[0069] The second elastic member 205a houses four first elastic members 204a therein. The four first elastic members 204a are arranged at equal intervals in the circumferential direction inside the annular second elastic member 205a. The second elastic member 205b houses four first elastic members 204b therein. The four first elastic members 204b are arranged at equal intervals in the circumferential direction inside the annular second elastic member 205b. The second elastic member 205c houses four first elastic members 204c therein. The four first elastic members 204c are arranged at equal intervals in the circumferential direction inside the annular second elastic member 205c.

[0070] Each of the second elastic members 205a, 205b, and 205c is provided between the side wall 10a and the conductive member 202 so as to be in contact with the side wall 10a and the conductive member 202 over the entire periphery. This makes it possible to ensure high thermal conductivity between the side wall 10a and the conductive member 202.

[0071] In this manner, the shield member 23 is fixed without using screws by pressing the conductive member 202 against the shield member 23 by the elastic force of the first elastic member 204. This eliminates the need for screws, and protrusions such as screws are not exposed in the processing space 10s. This reduces particle sources.

[0072] Moreover, the cooling structure 300 has a flow path 300a disposed in the vicinity of the shielding member 23. Then, by flowing a temperature adjustment medium through the flow path 300a, the temperature of the shielding member 23 can be adjusted (cooled, heated, etc.) via the multiple fixing members 201, the buffer members 203, and the conductive members 202.

[0073] The fixing members 201, the buffer members 203, and the conductive members 202 are made of metals with high thermal conductivity. The elastic force of the fixing members 201 presses the conductive members 202 against the shielding member 23. This further improves the thermal conductivity, and increases the heat extraction efficiency of the shielding member 23. At this time, the conductive members 202 alone may not be enough to cool the shielding member 23 by the cooling action of the cooling structure 300. Therefore, a buffer member 203 such as a carbon sheet with good thermal conductivity is installed between the conductive members 202 and the shielding member. With the above structure, the entire shielding member 23 and the conductive members 202 are constantly cooled, thereby preventing the conductive members 202 from rising in temperature and stably adjusting the shielding member 23 to a constant temperature.

[0074] In the processing space 10s, during the process step, plasma is generated from the gas supplied into the processing vessel 10 by the RF power supplied from the RF power source 137. In contrast, the second elastic member 205 is in close contact with the side wall 10a over the entire circumference. Therefore, the second elastic member 205 can release heat from the plasma to the outside more efficiently than the first elastic member 204 such as a spring. The second elastic member 205 also houses the first elastic member 204. This can prevent the first elastic member 204 from being exposed to the plasma.

[0075] The first elastic member 204 may penetrate the second elastic member 205, one end of which is screwed into a hole provided in the side wall 10a, and the other end of which is screwed into a hole provided in the conductive member 202. Even in this case, the first elastic member 204 and the second elastic member 205 are covered by the shield member 23, and no protrusions such as screw heads are exposed in the processing space 10s. By avoiding such a protruding structure, the generation of particles can be suppressed.

[0076] As described above, according to the substrate processing apparatus 1 of the present embodiment, it is possible to stabilize the temperature of the shield member 23 in the processing vessel 10. In addition, it is possible to reduce costs by simplifying the structure 200 around the shield member 23 and simplifying the maintenance parts.

[0077] [Variations] A structure 200a in the vicinity of the shielding member 23 according to a modified example will be described with reference to Fig. 5. Fig. 5 is a schematic cross-sectional view showing an example of a structure 200a in the vicinity of the shielding member 23 according to a modified example.

[0078] In the structure 200a around the shield member 23 according to the modified example, the conductive member 202 has only a cylindrical side portion and does not have an upper portion. Also, the buffer member 203 has only a cylindrical side portion and does not have an upper portion. The other configurations of the substrate processing apparatus 1 are the same as those of the substrate processing apparatus 1 of the above embodiment.

[0079] The conductive member 202 covers the entire periphery of the outer surface 23a1 of the side portion 23a of the shield member 23 with the buffer member 203 sandwiched therebetween.

[0080] Therefore, in the substrate processing apparatus of the modified example, the upper portion 23b of the shield member 23 comes into contact with the upper surface 10a2 of the sidewall 10a on which the flow path 300a is located, without the conductive member 202 and the buffer member 203 being interposed therebetween.

[0081] The upper portion 23b of the shield member 23 may be located above the upper surface 10a2 of the side wall 10a without contacting the upper surface 10a2. In other words, the lower surface 23b1 of the upper portion 23b of the shield member 23 may or may not contact the upper surface 10a2 of the side wall 10a.

[0082] As described above, according to the substrate processing apparatus of this modification, the structure 200a around the shield member 23 can stabilize the temperature of the shield member 23 in the processing vessel 10. Furthermore, the simplification of the structure 200a around the shield member 23 and the simplification of maintenance parts can reduce costs.

[0083] [others] The substrate processing apparatus 1 is not limited to the sputtering apparatus shown in Fig. 1, etc., but may be an ALD (Atomic Layer Deposition) apparatus or a CVD (Chemical Layer Deposition) apparatus. The substrate processing apparatus 1 may be any of a capacitively coupled plasma processing apparatus, an inductively coupled plasma processing apparatus, a microwave plasma processing apparatus, a VHF wave plasma processing apparatus, and a UHF wave plasma processing apparatus.

[0084] In the above embodiment, the substrate processing apparatus 1 is described as a single-wafer type that processes the substrates W one by one, but the present disclosure is not limited thereto. For example, the substrate processing apparatus may be a batch type apparatus that processes a plurality of substrates W at once. For example, the substrate processing apparatus may be a semi-batch type apparatus that processes the substrates W by rotating a plurality of substrates W arranged on a turntable in a processing vessel by the turntable and passing the substrates W in turn through an area where a first gas is supplied and an area where a second gas is supplied. For example, the substrate processing apparatus may be a multi-wafer deposition apparatus having a plurality of mounting tables in one processing vessel.

[0085] The processing of the substrate W performed by the substrate processing apparatus 1 includes, for example, a film forming process, an etching process, and the like.

[0086] The substrate processing apparatus according to the presently disclosed embodiment should be considered as illustrative and not restrictive in all respects. The embodiments can be modified and improved in various ways without departing from the scope and spirit of the appended claims. The matters described in the above embodiments can be configured in other ways without any contradiction, and can be combined without any contradiction. [Explanation of symbols]

[0087] 1...substrate processing apparatus, 10...processing vessel, 10s...processing space, 23...shield member, 200, 200a...structure around shield member, 201...fixing member, 202...conductive member, 203...buffer member, 204...first elastic member, 205...second elastic member, 300...cooling structure, 300a...flow path

Claims

1. A processing vessel; a temperature adjustment structure having a flow path inside a side wall of the processing vessel; a shield member provided in the processing vessel so as to be adjacent to the flow path; a conductive member provided between the side wall on which the flow path is located and the shield member; a conductive buffer member sandwiched between the shield member and the conductive member; a plurality of fixing members provided between the side wall and the conductive member, the fixing members having elasticity and conductivity, and fixing the conductive member in a manner of pressing the conductive member against the shield member; The substrate processing apparatus has

2. the temperature adjustment structure adjusts the temperature of the shielding member via the plurality of fixing members, the buffer member, and the conductive member by flowing a temperature adjustment medium through the flow path; The substrate processing apparatus according to claim 1 .

3. The flow path is formed around the entire circumference of the cylindrical shield member. The substrate processing apparatus according to claim 1 .

4. the shield member has a cylindrical side portion between the side wall and a processing space in which plasma is generated from a gas supplied into the processing vessel by RF power, and an upper portion extending outward from an upper end of the side portion over the entire circumference, and is configured so that the plurality of fixing members are not exposed to the processing space. The substrate processing apparatus according to claim 1 .

5. the conductive member covers the entire periphery of the outer surface of the side portion and the outer surface of the upper portion of the shield member, with the buffer member sandwiched therebetween; The substrate processing apparatus according to claim 4 .

6. the upper portion of the shield member contacts an upper surface of the side wall on which the flow path is located, via the conductive member and the buffer member. The substrate processing apparatus according to claim 5 .

7. the conductive member covers the entire outer surface of the side portion of the shield member with the buffer member in between; The substrate processing apparatus according to claim 4 .

8. the upper portion of the shield member is located in contact with or in non-contact with an upper surface of the side wall on which the flow path is located, without the conductive member and the buffer member therebetween; The substrate processing apparatus according to claim 7 .

9. the plurality of fixing members each have a set of fixing portions provided at positions where an upper fixing portion, a lower fixing portion located below the upper fixing portion, and an intermediate fixing portion located between the upper fixing portion and the lower fixing portion overlap in a plan view; A plurality of sets of the fixing portions are arranged in a circumferential direction along the side wall. The substrate processing apparatus according to claim 1 .

10. Each of the upper fixing part, the intermediate fixing part and the lower fixing part has a plurality of first elastic members arranged in a radial direction toward a central axis of the processing vessel, and a hollow second elastic member that houses the plurality of first elastic members therein. The substrate processing apparatus according to claim 9 .

11. The first elastic member is a spring. The substrate processing apparatus according to claim 10 .

12. The second elastic member is sheet-like and formed in a ring shape. The substrate processing apparatus according to claim 10 .

13. The substrate processing apparatus is any one of a capacitively coupled plasma processing apparatus, an inductively coupled plasma processing apparatus, a microwave plasma processing apparatus, a VHF plasma processing apparatus, and a UHF plasma processing apparatus, and is any one of a single-wafer processing apparatus for processing substrates one by one, a batch processing apparatus, and a semi-batch processing apparatus for processing a plurality of substrates at once. The substrate processing apparatus according to claim 1 .

Images