Silicon oxide continuous production equipment and continuous production method

Abstract

To provide continuous production equipment and a continuous production method capable of continuously producing silicon oxide.SOLUTION: According to one embodiment, there is provided a silicon oxide continuous production apparatus 100 including a main chamber part 110 connected to a reactor 10 that generates silicon oxide gas, the apparatus comprising: a condensation part including a cylindrical body having an open surface that is open to a connecting pipe 11 side connected to the reactor; a moving part 120 that moves the condensation part within the main chamber part; and a cooling part 170 configured to be movable forward and backward toward the body within the main chamber part so as to cool the body.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a silicon oxide continuous manufacturing facility and a continuous manufacturing method, and more particularly to a silicon oxide manufacturing facility and method for secondary batteries.

Background Art

[0002] Recently, due to the rapid rise of electric vehicles (EVs) and the like, the expectations for lithium-ion secondary batteries have increased, with demands for improving rapid charging characteristics while maintaining the existing capacity.

[0003] Among them, the technological development and demand for lithium secondary batteries have increased rapidly, and lithium secondary batteries with higher energy density than before are required. In order to increase the energy density of secondary batteries, research and development have been carried out, such as increasing the capacity of the positive and negative electrode materials, increasing the density of the electrode plates, thinning the separator membranes, and increasing the charge and discharge voltage. Research and development in the direction of increasing the capacity of the positive and negative electrode materials are also underway.

[0004] Among the negative electrode materials that determine the capacity of lithium secondary batteries, the development of silicon-based materials, which are the most promising materials for increasing capacity, is being actively promoted.

[0005] The manufacturing facility for the negative electrode material of the silicon-based material includes a reactor that gasifies the silicon oxide raw material and a condenser that condenses the gas generated in the reactor into a solid phase. At this time, the reactor and the condenser are connected by piping.

[0006] The condensation reaction can obtain a vapor deposition layer as a material only when it is carried out in a defined space. However, there is a problem that vapor may condense at the piping or the inlet of the condenser, etc., to form a vapor deposition layer, and continuous production cannot be carried out, and it may be necessary to stop the facility to remove the vapor deposition layer.

Prior Art Documents

Patent Documents

[0007]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0008] The present invention is for solving the problems of the prior art as described above, and an object thereof is to provide a continuous production facility and method capable of continuously producing silicon oxide.

Means for Solving the Problems

[0009] In order to achieve the above object, the present invention provides a silicon oxide continuous production facility and method as follows.

[0010] In one embodiment, the present invention is a silicon oxide continuous production apparatus including a main chamber portion connected to a reactor for generating silicon oxide gas, the apparatus including: a condensation portion including a cylindrical main body having an open surface opened on a connection pipe side connected to the reactor; a moving portion for moving the condensation portion within the main chamber portion; and a cooling portion configured to be able to move forward and backward toward the main body within the main chamber portion so as to cool the main body.

[0011] In one embodiment, the main chamber portion is connected to a vacuum generation portion, and the condensation portion may further include a frame connected to the main body.

[0012] In one embodiment, the main body has a cylindrical shape with a central axis extending in the horizontal direction, and the cross-sectional area of the main body may be larger than the cross-sectional area of the connection pipe.

[0013] In one embodiment, the cooling unit may include a cooling plate through which a cooling fluid passes and moving means for moving the cooling plate in the horizontal direction parallel to the central axis of the main body. The moving means may be configured to move the cooling plate such that when the silicon oxide gas flows into the main body of the condensation unit, the cooling plate contacts the back surface opposite to the open surface.

[0014] In one embodiment, the cooling plate may include first uneven portions, and the back surface of the main body may include second uneven portions that are shaped to fit the first uneven portions when the cooling plate contacts the back surface.

[0015] In one embodiment, the cooling unit may include a plurality of guide rods that extend in the horizontal direction and guide the cooling plate.

[0016] In one embodiment, a splash gas prevention plate that surrounds and extends around the cooling plate may be included inside the main chamber portion.

[0017] In one embodiment, the moving unit may include a plurality of rolls disposed at the lower part of the frame and driving means for rotating the rolls. A flow guiding plate that extends inside the main chamber portion around the connecting pipe may also be included.

[0018] In one embodiment, the frame has a rectangular parallelepiped shape that surrounds the main body, and a gas guiding plate having through holes formed in the surface in the direction of the open surface may be disposed on the frame. The diameters of the through holes on the front surface and the back surface of the gas guiding plate may be different.

[0019] In one embodiment, the main chamber portion includes first and second gate valves disposed on both side surfaces in the moving direction in which the condensation unit moves by the moving unit. A loading chamber may be connected to the outside of the first gate valve, and an unloading preparation chamber may be connected to the outside of the second gate valve.

[0020] In one embodiment, the loading chamber and the stripping preparation chamber can be connected to a vacuum generating unit. The main chamber portion is disposed above a connecting portion where the connecting pipe is connected in the main chamber portion, and includes a scraper configured to be movable in the vertical direction and a collecting portion disposed below the scraper.

[0021] In one embodiment, the present invention provides a continuous manufacturing method of silicon oxide, including: a first moving step of the main body for moving a cylindrical main body to a condensation position inside the main chamber portion in a vacuum state; a cooling unit approaching step of approaching at least a part of the cooling unit to one side surface of the main body that has moved from the outside of the main body to the condensation position; a condensation step of condensing silicon oxide gas of the reactor inside the main body; a cooling unit detaching step of detaching the cooling unit from the main body; and a second moving step of the main body for moving the main body from the condensation position to a cooling position.

[0022] In one embodiment, before the first moving step of the main body, a loading chamber loading step of loading the main body into a loading chamber in an atmospheric pressure state; a vacuuming step of evacuating the loading chamber into which the main body has been loaded through a vacuum generating unit; and a step of opening a first gate valve between the evacuated loading chamber and the main chamber portion and loading the main body into the main chamber portion can be further included.

[0023] In one embodiment, after the second moving step, a stripping preparation chamber loading step of opening a second gate valve between the main chamber portion and the stripping preparation chamber and loading the main body into the evacuated stripping preparation chamber; and a discharging step of closing the second gate valve, adjusting the stripping preparation chamber to atmospheric pressure, and then discharging the main body to the outside can be further included.

[0024] In one embodiment, after the discharging step, a removing step of removing the condensate condensed on the main body is further included, and the main body from which the condensate has been removed can perform the loading chamber charging step again.

Advantages of the Invention

[0025] With the above configuration, the present invention can provide a continuous manufacturing facility and method capable of continuously manufacturing silicon oxide.

Brief Description of the Drawings

[0026]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7a

Figure 7b

Figure 8

Modes for Carrying Out the Invention

[0027] Hereinafter, with reference to the accompanying drawings, preferred embodiments will be described in detail so that those having ordinary knowledge in the technical field to which the present invention pertains can easily implement the present invention. However, when describing the preferred embodiments of the present invention in detail, if it is determined that a specific description of related known functions or configurations may unnecessarily obscure the gist of the present invention, the detailed description thereof will be omitted. Also, for parts having the same function and action, the same reference numerals are used throughout the drawings. In this specification, terms such as "upper", "upper part", "upper surface", "lower", "lower part", "lower surface", "side surface", etc. are based on the drawings and may actually differ depending on the direction in which the components are arranged.

[0028] Furthermore, throughout the specification, when a certain part is said to be "connected" to another part, this includes not only the case where it is "directly connected", but also the case where it is "indirectly connected" with other components interposed therebetween. Also, when a certain component is said to "include", it does not exclude other components and means that it may further include other components unless otherwise stated to the contrary.

[0029] Figures 1 to 6 show a silicon oxide continuous production apparatus according to an embodiment of the present invention. Figure 1 shows a schematic diagram of the silicon oxide continuous production apparatus according to an embodiment of the present invention, Figure 2 shows a schematic perspective view of the silicon oxide continuous production apparatus according to an embodiment of the present invention, Figure 3 shows a perspective view of the condensation part of the continuous production facility of Figure 1, Figure 4 shows a schematic perspective view of the cooling part seen from the inside of the main chamber part in the continuous production facility of Figure 1, Figure 5 shows a schematic cross-sectional view of the main chamber part of the continuous production facility of Figure 1, and Figure 6 shows a schematic cross-sectional view at the condensation position of the main chamber part of the continuous production facility of Figure 1.

[0030] The silicon oxide continuous production apparatus 100 according to an embodiment of the present invention includes a main chamber portion 110 connected to a reactor 10 that generates silicon oxide gas, a condensation portion 200 including a cylindrical main body 210 having an open surface opened to a side of a connection pipe 11 connected to the reactor 10 so that the silicon oxide gas flows into and condenses in the main chamber portion 110, a moving portion 120 that moves the condensation portion 200 within the main chamber portion 110; and a cooling portion 170 configured to be movable within the main chamber portion 110 so as to cool the main body 210 when the silicon oxide gas flows into the condensation portion 200.

[0031] The silicon oxide continuous production apparatus 100 according to an embodiment of the present invention is an apparatus that receives the supply of silicon oxide gas generated from the reactor 10, condenses it, and manufactures silicon oxide. The configuration of the reactor 10 is not limited as long as it can generate silicon oxide gas.

[0032] As shown in FIG. 1, the reactor 10 is connected to a raw material supply portion 20, includes a heater (not shown), and heats the raw material supplied from the raw material supply portion 20 to generate gas. The reactor 10 generates gas in a heat-insulated state from the outside by a heat-insulating material layer 17, and a heater 15 is disposed in a connection pipe 11 that connects the reactor 10 and the main chamber portion 110 so as to prevent condensation inside the pipe.

[0033] In the present invention, when the condensation portion 200 enters, the main chamber portion 110 supplies gas through the connection pipe 11, and when the condensation in the condensation portion 200 is completed, it discharges to the outside of the main chamber portion 110 to remove condensate. The main chamber portion 110 includes a connection portion 112 to which the connection pipe 11 of the reactor 10 is connected, and includes a housing 111 that forms an internal space in which the condensation portion 200 is accommodated. The housing 111 can be heat-insulated, the internal space is connected to a vacuum forming portion 300, and maintains internal vibration in a state of being connected to the reactor 10.

[0034] As shown in FIG. 1, the main chamber portion 110 includes a moving portion 120 that moves the condensation portion 200, and a cooling portion 170 that contacts the condensation portion 200 to cool the condensation portion 200 when the condensation portion 200 reaches the condensation position. Further, the main chamber portion 110 includes a flow guiding plate 113 that surrounds the connecting portion 112 and guides the gas flowing into the internal space to move inside the main body 210 of the condensation portion 200, and a scattered gas prevention plate 115 that surrounds the cooling portion 170 and extends into the internal space to block the flow of gas to the cooling portion 170.

[0035] A loading chamber 130 is connected to one side of the main chamber portion 110, and an unloading preparation chamber 150 is connected to the other side. A first gate valve 140 is disposed between the loading chamber 130 and the main chamber portion 110, and a second gate valve 160 is disposed between the unloading preparation chamber 150 and the main chamber portion 110. Moving portions 133 and 153 for moving the condensation portion 200 can be provided on the inlet side of the loading chamber 130 and the outlet side of the unloading preparation chamber 150, and the loading chamber 130 and the unloading preparation chamber 150 include a door 135 so that the condensation portion 200 can enter and exit the chamber.

[0036] The loading chamber 130 and the unloading preparation chamber 150 are also connected to the vacuum generating portion 300 in the same manner as the main chamber portion 110. The loading chamber 130 is disposed at a position before the condensation portion 200 enters the main chamber portion 110. When the condensation portion 200 enters the loading chamber 130, the air inside the loading chamber 130 is removed through the vacuum generating portion 300 to create a vacuum state, and then the first gate valve 140 is opened to enable the condensation portion 200 to be introduced into the main chamber portion 110 while maintaining the internal vacuum of the main chamber portion 110.

[0037] Similarly, in the unloading preparation chamber 150, the second gate valve 160 is opened in a vacuum state, the condensing unit 200 is transferred from the main chamber unit 110, air is supplied to the unloading preparation chamber 150 with the second gate valve 160 closed, and then the condensing unit 200 is discharged to the outside. Therefore, the present invention includes a loading chamber 130 and an unloading preparation chamber 150, and the condensing unit 200 can be loaded and unloaded while the main chamber unit 110 maintains a vacuum state.

[0038] The main chamber unit 110 includes a moving unit 120 that moves the condensing unit 200 inside from the loading chamber 130 side to the unloading preparation chamber 150 side. In this embodiment, the main chamber unit 110 includes a space capable of accommodating three condensing units 200, and this space is called the preheating position A1, the condensing position A2, and the cooling position A3 of the condensing unit 200 in the direction from the loading chamber 130 to the unloading preparation chamber 150. Specifically, as shown in FIG. 1, the position of the condensing unit 200 adjacent to the loading chamber 130 inside the main chamber unit 110 is called the preheating position A1. When located at the center inside the main chamber unit 110, the position of the condensing unit 200 is called the condensing position A2, and the gas from the connecting pipe 11 is supplied to the condensing unit 200 from the condensing position A2. The position of the condensing unit 200 adjacent to the unloading preparation chamber 150 inside the main chamber unit 110 is called the cooling position A3.

[0039] However, it is not essential for the main chamber portion 110 to have a space capable of accommodating three condensation portions 200. It is sufficient if the main chamber portion 110 can position the condensation portion 200 at the condensation position A2. The preheating position A1 and the cooling position A3 may also be inside the loading chamber 130 or the unloading preparation chamber 150. The preheating position A1 and the cooling position A3 may be inside the loading chamber 130 or the unloading preparation chamber 150 instead of inside the main chamber portion 110. The stages at which the condensation portion 200 is processed when it is positioned at the preheating position A1, the condensation position A2, and the cooling position A3 will be described later. Also, if necessary, more than three condensation portions 200 may be accommodated inside the main chamber portion 110.

[0040] At the condensation position A2, a cooling portion 170 is disposed behind the condensation portion 200, that is, at a position opposite to the position of the connecting pipe 11. The cooling portion 170 includes a cooling plate 175 and a moving means 171 connected to the cooling plate 175 for moving the cooling plate 175 forward and backward. The cooling plate 175 is connected to a cooling water supply portion 190. In the cooling plate 175, the cooling fluid cools the cooling plate 175 while circulating through the cooling plate 175. The cooling plate 175 cools the outer surface of the rear surface 213 of the main body 210 of the condensation portion 200, and condenses the gas on the inner surface of the rear surface 213.

[0041] On the other hand, in the main chamber portion 110, above the connecting portion 112 to which the connecting pipe 11 is connected, a removing portion 180 for removing the condensate generated at the end of the connecting pipe 11 and reducing the cross-sectional area of the connecting pipe 11 is disposed.

[0042] The individual components will be described in more detail with reference to FIGS. 3 to 6.

[0043] The moving part 120 provided at the lower part of the main chamber part 110 includes a plurality of rolls 121 and driving means 125 for rotating the rolls 121. The driving means 125 may be a motor. The driving means 125 and the plurality of rolls 121 are connected by power transmission means, such as a chain, a belt, a gear, etc. According to the driving operation of the driving means 125, the rolls 121 rotate and the condensation part 200 fixed to the rolls 121 can move.

[0044] The condensation part 200 includes a cylindrical main body 210, a rectangular parallelepiped frame 220, and a mounting part 230 disposed at the lower part of the main body 210 so that one surface of the main body 210 lies horizontally and is connected to the frame 220 with the surface open. The central axis C2 (see FIG. 5) of the main body 210 is located in the horizontal direction parallel to the extension direction of the connecting pipe 11. The diameter of the main body 210 is larger than the diameter of the connecting pipe 11.

[0045] In the frame 220, a gas guide plate 225 is disposed on the surface where the open surface of the main body 210 is located, and through holes 212 are formed in the gas guide plate 225 so that gas flows into the open surface. The diameter of the through holes 212 may be smaller than the diameter of the main body 210, but is formed larger than the diameter of the connecting pipe 11. Since the condensation part 200 includes the gas guide plate 225 and the main chamber part 110 includes a flow guiding plate 113, the gas supplied from the connecting pipe 11 does not flow into other spaces inside the main chamber part 110, but flows into the inside of the main body 210.

[0046] On the upper side of the main body 210, a substantially triangular ring fitting 217 for hanging a hoist or a crane is connected when the condensation part 200 is discharged outside the equipment 100 and moves to remove condensate.

[0047] The above-described main body 210 is cylindrical with a central axis C2 formed horizontally, one side being open and the other side, i.e., the back surface 213, being closed. On the back surface 213, the inner surface serves as a condensation surface where the above gas condenses, and the outer surface of the back surface 213 is in contact with the cooling plate 175 of the above cooling unit 170 so that condensation occurs on the above inner surface. The outer surface of the above back surface 213 has recesses 214 and protrusions 215 formed alternately in an annular shape. Since the recesses 214 and protrusions 215 have shapes corresponding to the protrusions 176 and recesses 177 of the cooling plate 175, the uneven portions 176, 177 on the front surface of the cooling plate 175 can be matched to the uneven portions 214, 215 on the outer surface to increase the heat transfer area. At this time, the uneven portions 176, 177 of the cooling plate 175 can be referred to as the first uneven portions, and the uneven portions 214, 215 of the back surface 213 can also be referred to as the second uneven portions.

[0048] On the other hand, the continuous manufacturing facility 100 according to an embodiment of the present invention includes a control unit 400. The control unit 400 moves the condensation unit 200 introduced into the inside of the main chamber unit 110 via the driving means 125 of the moving unit 120. In order to monitor whether the condensation unit 200 is located at an accurate position, a plurality of position sensing sensors 128 can be arranged inside the main chamber unit 110. The position sensing sensor 128 may be a non-contact sensor as shown in FIG. 5, or may be composed of a contact sensor. Through the position sensing sensor 128, the condensation unit 200 can be particularly accurately arranged at the condensation position A2.

[0049] The cooling unit 170 may have moving means 171 disposed outside that horizontally moves the cooling plate 175 such that the side of the cooling plate 175 faces the inner space of the main chamber portion 110. A part of the moving means 171 is fixed to the housing 111, and a part is connected to the cooling plate 175, enabling the cooling plate 175 to move relative to the housing 111. In one embodiment, the moving means 171 includes a motor and a rotating shaft 172 having a screw thread connected to the motor. The cooling unit 170 is connected to the rotating shaft 172 and includes a plate 173 that moves in response to the rotation of the rotating shaft 172, and a plurality of guide rods 174 that are connected to the cooling plate 175 and extend horizontally to guide the movement. The rotation of the motor is configured to switch to the forward and backward movement of the cooling plate 175, but is not limited thereto. Of course, it is also possible to adopt a cylinder that directly realizes the forward and backward movement as the moving means.

[0050] On the other hand, to prevent gas from adhering to and condensing on the surface of the cooling plate 175 of the cooling unit 170, a splash gas prevention plate 115 (see FIG. 5) that surrounds the cooling plate 175 is disposed in the main chamber portion 110.

[0051] The first uneven portions 176 and 177 of the cooling unit 170 are formed in a shape corresponding to the second uneven portions 214 and 215 of the main body 210. The central axis C1 of the first uneven portions 176 and 177 and the center C2 of the main body 210 can be referred to as the same position, which is the condensation position A2 of the condensation unit 200.

[0052] At the condensation position A2, a removal unit 180 is disposed above the condensation unit 200 and the connecting pipe 11. The removal unit 180 includes a scraper 182 and a collection unit 185 disposed below the scraper 182. The scraper 182 is connected to a scraper driving unit 181 and is configured to move in the vertical direction in response to the driving of the scraper driving unit 181. The scraper 182 moves in the vertical direction at a position corresponding to the end of the connecting pipe 11 located at the connecting portion 112, removes the condensate that may be formed at the end of the connecting pipe 11, and enables the gas to be smoothly supplied from the connecting pipe 11.

[0053] The operation of the silicon oxide continuous manufacturing apparatus 100 according to an embodiment of the present invention will be described.

[0054] The silicon oxide continuous manufacturing apparatus 100 has a structure in which a plurality of condensation units 200 are supplied and discharged. In the condensation unit 200, when condensation at a certain level is performed, the condensation unit 200 can be changed without stopping the apparatus so that continuous condensation occurs, enabling continuous production of silicon oxide.

[0055] Also, for continuous operation, it includes a loading chamber 130, a degassing preparation chamber 150, and first and second gate valves 140, 160, and the charging and discharging of the condensation unit 200 can be performed in the main chamber unit 110 while maintaining a vacuum state.

[0056] The condensation unit 200 introduced through the loading chamber 130 is introduced into the main chamber unit 110 when the first gate valve 140 opens after the loading chamber 130 is adjusted to a vacuum atmosphere. In the main chamber unit 110, the condensation unit 200 is located at the preheating position A1 and is preheated while waiting when the previous condensation unit 200 is performing condensation at the condensation position A2. Although it does not have a separate heater for preheating, it is also possible to provide a heater if necessary. By performing preheating, the condensation unit 200 can limit the portion where condensation occurs at the condensation position A2 to the back surface 213 in contact with the cooling plate 175.

[0057] When the condensation is completed and the previous condensation section 200 exits from the condensation position A2, the condensation section 200 located at the preheating position A1 moves to the condensation position A2 by the moving section 120. When the condensation section 200 moves to the condensation position A2, the cooling plate 175 advances in the direction of the condensation section 200 and contacts the back surface 213 of the condensation section 200. Heat escapes from the cooling plate 175, so that the gas supplied into the condensation section 200 condenses on the inner surface of the other surface 213, and a condensate is formed. At this time, if necessary, the removing section 180 operates to remove the condensate generated in the connecting pipe 11.

[0058] Even during the movement of the condensation section 200, gas continues to be generated in the reactor 10. However, the movement of the condensation section 200 does not take a long time. The flow guiding plate 113 and the gas flow plate 225 prevent the gas from flowing out of the outside of the main body 210 of the condensation section 200, and continuous operation can be performed. Further, the cooling plate 175 advances and retreats so that condensation is performed in the moving condensation section 200, and the scattering gas prevention plate 115 is arranged so that no condensate is generated on the contact surface between the cooling plate 175 and the main body 210.

[0059] When the condensation section 200 is located at the condensation position A2 and sufficient time has elapsed, the condensation section 200 is regarded as having completed condensation and moves from the condensation position A2 to the cooling position A3. It is naturally cooled while waiting at the cooling position A3, and then moves to the degassing preparation chamber 150 through the second gate valve 160. The degassing preparation chamber 150 is maintained in a vacuum atmosphere when the second gate valve 160 is opened. However, when the condensation section 200 is put into the degassing preparation chamber 150 and the second gate valve 160 is closed, air is introduced in the same manner as the external atmosphere. Then, the door (not shown) is opened to discharge the condensation section 200 from the degassing preparation chamber 150, and the condensate condensed on the back surface 213 of the condensation section 200 is removed.

[0060] In the present invention, the condensate grows from the back surface 213 of the cylindrical main body 210, and the main body 210 is formed of a highly conductive metal material to facilitate cooling through the cooling plate 175. However, since the thermal expansion coefficients of the main body 210 and the condensate are different, when the condensation part 200 is sufficiently cooled, the condensate cracks inside the cylindrical main body 210 due to the difference in thermal expansion coefficients, making it easy to recover the condensate. The cylindrical main body 210 can accommodate the cracked condensate even in a horizontal state, and no matter when the condensate cracks, it has no impact on recovery.

[0061] In this way, the condensate is removed from the condensation part 200 and recovered, and the empty condensation part 200 is again put into the loading chamber 130 from the beginning. It is preferable to position the condensation part 200 for each position, but when there are at least two condensation parts 200, it is possible to operate them in a continuous process.

[0062] On the other hand, FIGS. 7a and 7b show schematic cross-sectional views of the gas guide plate 225 of the present invention. As shown in FIGS. 7a and 7b, the diameters d1 on the side of the connecting pipe 11 and d2 on the side of the main body 210 of the gas guide plate 225 may be different. That is, the diameter d1 of the front surface and the diameter d2 of the back surface of the gas guide plate 225 may be different. When the diameter d1 of the front surface is larger than the diameter d2 of the back surface, the gas guide plate 225 deforms toward the main body 210 side, and when the diameter d2 of the back surface is larger than the diameter d1 of the front surface, the gas guide plate 225 deforms toward the connecting pipe 11 side. This is because the gas guide plate 225 deforms as the gas flows in from the connecting pipe 11 and the temperature rises while the gas guide plate 225 is fixed by the frame 220. By adjusting the diameter d1 of the front surface and the diameter d2 of the back surface, it is possible to deform the gas guide plate 225 into a form suitable for the gas flow from the connecting pipe 11 to the main body 210.

[0063] FIG. 8 shows a flowchart of a method for continuously manufacturing silicon oxide according to an embodiment of the present invention. The flowchart of FIG. 8 will be described with reference to the silicon oxide continuous manufacturing apparatus of FIG. 1.

[0064] The continuous manufacturing method of silicon oxide includes a loading chamber charging step S110 of charging a condenser 200 into a loading chamber 130; a evacuation step S120 of evacuating the loading chamber 130; a main chamber part charging step S130 of charging the condenser 200 into the interior of the main chamber part in a vacuum state; a preheating step S140 of preheating the condenser 200 at a preheating position A1; a moving step S150 of moving the condenser 200 to a condensation position A2 where a connecting pipe 11 and a cooling plate 175 are located; a cooling part approaching step S160 in which the cooling plate 175 of the cooling part 170 advances and contacts the condenser 200 when the condenser 200 moves to the condensation position A2; a condensation step S170 in which the gas supplied through the connecting pipe 11 condenses in the condenser 200 while the cooling plate 175 is in contact; a cooling part detachment step S180 in which the cooling plate 175 of the cooling part 170 retreats and the condenser 200 and the cooling plate 175 are separated; a moving step S190 in which the condenser 200 moves from the condensation position A2 after the cooling part 170 detaches; a cooling step S200 in which the condenser 200 is cooled; a moving step S210 of moving the condenser 200 to a degassing preparation chamber 150 in a vacuum state; a discharging step S220 of discharging the condenser 200 from the degassing preparation chamber 150 to the outside after introducing air into the degassing preparation chamber 150; and a removing step S230 of removing the condensate of the discharged condenser 200. The condenser 200 from which the condensate has been removed in the removing step S230 is charged into the loading chamber 130 again, and the charging step S110 is performed, whereby a series of steps is repeated.

[0065] In the present invention, before being introduced into the main chamber section 110, it is introduced into the loading chamber 130 (S110). After evacuating the loading chamber 130 (S120), the first gate valve 140 is opened and it is introduced into the main chamber section 110 (S130). When discharging, the second gate valve 160 is opened to move the condensation section 200 into the evacuated degassing preparation chamber 150. After closing the second gate valve 160, the condensation section 200 is withdrawn from the degassing preparation chamber 150. Therefore, it is possible to maintain the vacuum of the main chamber section 110 while the process continues. Further, when the condensation section 200 moves to the condensation position A2 or moves from the condensation position A2, the cooling section 170 is disengaged. However, before performing the condensation operation at the condensation position A2, the cooling section 170 approaches the condensation section 200 to remove the heat of the condensation section 200, so that condensation can be continuously performed without affecting the moving process.

[0066] As described above, the embodiments of the present invention have been mainly described. However, it goes without saying that the present invention is not limited thereto and can be variously modified and implemented.

Explanation of Reference Numerals

[0067] 10: Reactor 11: Connecting pipe 15: Heater 17: Heat insulation material layer 20: Supply section 100: Continuous manufacturing apparatus 110: Main chamber section 111: Housing 112: Connecting section 113: Flow guiding plate 115: Scattered gas prevention plate 120: Moving section 130: Loading chamber 140: First gate valve 150: Degassing preparation chamber 160: Second gate valve 170: Cooling section 175: Cooling plate 180: Removal section 200: Condensation section 210: Main body 213: Back surface 220: Frame 225: Gas guide plate

Claims

1. An apparatus for continuously producing silicon oxide, comprising: a main chamber connected to a reactor for producing silicon oxide gas, A connecting pipe connected to the reactor; a condensation section including a cylindrical main body having an open surface that is open to the connecting pipe side; a moving unit that moves the condensation unit within the main chamber; a cooling unit configured to be movable toward and away from the main body within the main chamber so as to cool the main body; An apparatus for continuously producing silicon oxide comprising:

2. The main chamber is connected to a vacuum generating unit, The apparatus for continuously producing silicon oxide according to claim 1 , wherein the condenser further comprises a frame connected to the main body.

3. The main body has a cylindrical shape with a central axis extending horizontally, The apparatus for continuously producing silicon oxide according to claim 1 , wherein a cross-sectional area of ​​the main body is larger than a cross-sectional area of ​​the connecting pipe.

4. 4. The apparatus for continuously producing silicon oxide according to claim 3, wherein said cooling section includes a cooling plate through which a cooling fluid passes, and a moving means for moving said cooling plate in said horizontal direction parallel to a central axis of said main body.

5. 5. The apparatus for continuously producing silicon oxide according to claim 4, wherein the moving means is configured to move the cooling plate so that the cooling plate comes into contact with a back surface opposite to the open surface when the silicon oxide gas flows into the main body of the condenser.

6. the cooling plate includes a first uneven portion, 6. The apparatus for continuously producing silicon oxide according to claim 5, wherein the rear surface of the main body includes a second uneven portion that is molded into the first uneven portion when the cooling plate contacts the rear surface.

7. 5. The apparatus for continuously producing silicon oxide according to claim 4, wherein the cooling section includes a plurality of guide rods extending in the horizontal direction and guiding the cooling plate.

8. 7. The apparatus for continuously producing silicon oxide according to claim 6, further comprising a gas scattering prevention plate extending inside said main chamber section so as to surround said cooling plate.

9. 3. The apparatus for continuously producing silicon oxide according to claim 2, wherein the moving section includes a plurality of rolls disposed below the frame, and a driving means for rotating the rolls.

10. 3. The apparatus for continuously producing silicon oxide according to claim 2, further comprising a flow guide plate extending into the main chamber portion around the connecting pipe.

11. 3. The apparatus for continuously producing silicon oxide according to claim 2, wherein the frame has a rectangular parallelepiped shape surrounding the main body, and a gas guide plate having through holes is disposed on a surface of the frame facing the open surface.

12. The apparatus for continuously producing silicon oxide according to claim 11 , wherein the through-holes have different diameters at the front surface of the gas guide plate and the rear surface of the gas guide plate.

13. the main chamber includes first and second gate valves disposed on both sides in a moving direction in which the condenser is moved by the moving unit, 3. The apparatus of claim 2, wherein a loading chamber is connected to an outer side of the first gate valve.

14. The apparatus for continuously producing silicon oxide according to claim 13, wherein a stripping preparation chamber is connected to an outer side of the second gate valve.

15. The apparatus for continuously producing silicon oxide according to claim 14 , wherein the loading chamber and the stripping preparation chamber are connected to a vacuum generating unit.

16. 2. The apparatus for continuously producing silicon oxide according to claim 1, further comprising: a scraper disposed above a connecting portion to which the connecting pipe is connected in the main chamber and configured to be movable in a vertical direction; and a collection portion disposed below the scraper.

17. a first moving stage of the cylindrical body in a condensing position within the main chamber under vacuum; a cooling unit approaching step of bringing at least a portion of a cooling unit closer to the one side surface of the body that has moved from the outside of the body to the condensation position; a condensation step of condensing the silicon oxide gas of the reactor inside the body; a cooling unit detaching step of detaching the cooling unit from the main body; a second moving step of the body moving the body from the condensing position to a cooling position; 1. A method for continuously producing silicon oxide, comprising:

18. a loading chamber introduction step of introducing the body into a loading chamber under atmospheric pressure, the loading chamber introduction step being performed before the first moving step of the body; a vacuum generating unit for evacuating the loading chamber into which the main body is inserted; a main chamber introduction step of opening a first gate valve between the evacuated loading chamber and the main chamber and introducing the body into the main chamber; 20. The method for continuously producing silicon oxide according to claim 17, further comprising:

19. a removal preparation chamber introduction step, which is performed after the second moving step of the main body, of opening a second gate valve between the main chamber and the removal preparation chamber and introducing the main body into the evacuated removal preparation chamber; a discharge step of closing the second gate valve, adjusting the pressure in the desorption preparation chamber to atmospheric pressure, and discharging the main body to the outside; 20. The method for continuously producing silicon oxide according to claim 18, further comprising:

20. The method further includes a removing step of removing condensate condensed on the body, the removing step being performed after the discharging step, 20. The method of claim 19, further comprising the step of inserting the body from which the condensate has been removed into a loading chamber again.

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