Processing system

Abstract

To provide a processing system capable of appropriately processing an object to be processed.SOLUTION: A processing system that processes an object using an energy beam, comprises: an irradiation optical system that has a focusing optical system, and focuses the energy beam incident on a pupil plane of the focusing optical system and irradiates the object with the beam; and a detection device that detects object light including light from the object via the focusing optical system. At least a portion of a path of the object light within the focusing optical system is different from at least a portion of the path of the energy beam within the focusing optical system.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to the technical field of a processing system for processing an object, for example.

Background Art

[0002] An example of a processing system for processing an object is described in Patent Document 1. Specifically, Patent Document 1 describes a processing system that performs additive processing on a workpiece, which is an example of an object, by supplying a material powder to the workpiece and irradiating it with a laser beam. One of the technical problems of such a processing system is appropriately processing the object to be processed.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

[0004] According to a first aspect, there is provided a processing system for processing an object using an energy beam, comprising a condensing optical system, an irradiation optical system that condenses the energy beam incident on a pupil plane of the condensing optical system and irradiates the object therewith, and a detection device that detects object light including light from the object via the condensing optical system, wherein at least a part of a path of the object light in the condensing optical system is different from at least a part of a path of the energy beam in the condensing optical system.

[0005] According to a second aspect, there is provided a processing system for processing an object using an energy beam, comprising an irradiation optical system that irradiates the object with a plurality of energy beams as the energy beam, and a beam characteristic changing device that individually changes at least one characteristic of the plurality of energy beams.

[0006] According to a third aspect, there is provided a processing system for processing an object using an energy beam, the processing system comprising: an irradiation optical system that irradiates the object with a plurality of energy beams as the energy beam; and a beam characteristic changing device that changes at least one characteristic of the plurality of energy beams, wherein a characteristic of a first energy beam among the plurality of energy beams is different from a characteristic of a second energy beam among the plurality of energy beams.

[0007] According to a fourth aspect, there is provided a processing system for processing an object using an energy beam, the processing system comprising: an irradiation optical system that irradiates the object with a plurality of energy beams as the energy beam; and a beam characteristic changing device that changes at least one characteristic of the plurality of energy beams, wherein the beam characteristic changing device is capable of setting a characteristic of a first energy beam among the plurality of energy beams to be different from a characteristic of a second energy beam.

[0008] According to a fifth aspect, there is provided a processing system for processing an object using an energy beam, the processing system comprising: an irradiation optical system that irradiates the object with a plurality of energy beams as the energy beam; and a beam characteristic setting device that is capable of setting a characteristic of a first energy beam among the plurality of energy beams to be different from a characteristic of a second energy beam among the plurality of energy beams.

[0009] According to a sixth aspect, there is provided a processing system for processing an object using an energy beam, the processing system comprising: an irradiation optical system that irradiates the object with a plurality of energy beams as the energy beam; and a distance changing device that changes a distance between a surface where the plurality of energy beams are superimposed and a surface of the object to change a distribution of the energy beam on the surface of the object.

[0010] The operations and other advantages of the present invention will become apparent from the following embodiments for carrying out the invention.

Brief Description of the Drawings

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Embodiments for Carrying Out the Invention

[0012] Hereinafter, with reference to the drawings, a processing system SYS which is an embodiment of the processing system of the present invention will be described. In the following description, the positional relationships of various components constituting the processing system SYS will be described using an XYZ orthogonal coordinate system defined by an X-axis, a Y-axis, and a Z-axis that are orthogonal to each other. In the following description, for convenience of explanation, it is assumed that each of the X-axis direction and the Y-axis direction is a horizontal direction (that is, a predetermined direction in a horizontal plane), and the Z-axis direction is a vertical direction (that is, a direction orthogonal to the horizontal plane, and substantially an up-and-down direction or a gravitational direction). Also, the rotational directions (in other words, the inclination directions) around the X-axis, the Y-axis, and the Z-axis are referred to as the θX direction, the θY direction, and the θZ direction, respectively. Here, the Z-axis direction may be the gravitational direction. Also, the XY plane may be the horizontal direction.

[0013] (1) Machining system SYS of the first embodiment First, the processing system SYS of the first embodiment (hereinafter, the processing system SYS of the first embodiment will be referred to as "processing system SYSa") will be described. The processing system SYSa of the first embodiment is a processing system capable of forming a three-dimensional structure ST by performing additional processing. The processing system SYSa can form a three-dimensional structure ST, for example, by performing additional processing based on the laser metal deposition (LMD) method. Note that the laser metal deposition (LMD) method may also be referred to as direct metal deposition, direct energy deposition, laser cladding, laser engineered net shaping, direct light fabrication, laser consolidation, shape deposition manufacturing, wire-feed laser deposition, gas-through-wire, laser powder fusion, laser metal forming, selective laser powder remelting, laser direct casting, laser powder deposition, laser additive manufacturing, or laser rapid forming. However, the processing system SYSa may form a three-dimensional structure ST by performing additional processing based on other additional processing methods.

[0014] Hereinafter, the structure and operation of the processing system SYSa that performs such additional processing will be described in order.

[0015] (1-1) Structure of machining system SYSa First, with reference to FIGS. 1 and 2, the structure of the processing system SYSa of the first embodiment will be described. FIG. 1 is a cross-sectional view schematically showing the structure of the processing system SYSa of the first embodiment. FIG. 2 is a system configuration diagram showing the system configuration of the processing system SYSa of the first embodiment.

[0016] The processing system SYSa can form a three-dimensional structure ST (i.e., a three-dimensional object having a size in any direction in the three-dimensional direction, a three-dimensional object, in other words, an object having a size in the X-axis direction, Y-axis direction, and Z-axis direction). The processing system SYSa can form the three-dimensional structure ST on a workpiece W that serves as a basis (i.e., a base material) for forming the three-dimensional structure ST. The processing system SYSa can form the three-dimensional structure ST by performing additional processing on the workpiece W. When the workpiece W is the stage 41 described later, the processing system SYSa can form the three-dimensional structure ST on the stage 41. When the workpiece W is an object placed on the stage 41, i.e., a placed object, the processing system SYSa can form the three-dimensional structure ST on the placed object. In this case, the processing system SYSa may form a three-dimensional structure ST integrated with the placed object. The operation of forming a three-dimensional structure ST integrated with the placed object is equivalent to the operation of adding a new structure to the placed object. Note that the existing structure may be, for example, a defective product with a defective part. The processing system SYSa may form the three-dimensional structure ST on the defective product so as to fill the defective part of the defective product. Alternatively, the processing system SYSa may form a three-dimensional structure ST separable from the placed object. The placed object placed on the stage 41 may be another three-dimensional structure ST (i.e., an existing structure) formed by the processing system SYSa. Hereinafter, the description will proceed using an example in which the workpiece W is an object placed on the stage 41. Note that in the following description, unless otherwise specified, the workpiece W means both a workpiece W on which the three-dimensional structure ST has not been formed and a workpiece W on which at least a part of the three-dimensional structure ST has been formed (i.e., a workpiece W including at least a part of the formed three-dimensional structure ST).

[0017] As described above, the processing system SYSa can form a shaped object by laser cladding welding. That is to say, it can also be said that the processing system SYSa is a 3D printer that forms an object using additive manufacturing technology. Incidentally, additive manufacturing technology may also be referred to as Rapid Prototyping, Rapid Manufacturing, or Additive Manufacturing.

[0018] The processing system SYSa processes the shaping material M with the processing light EL to form a shaped object. The shaping material M is a material that can be melted by irradiation with the processing light EL having a predetermined intensity or more. As such a shaping material M, for example, at least one of a metallic material and a resinous material can be used. However, other materials different from the metallic material and the resinous material may be used as the shaping material M. The shaping material M is a powdery or granular material. That is to say, the shaping material M is a powder or granule. However, the shaping material M does not have to be a powder or granule. For example, at least one of a wire-shaped shaping material and a gaseous shaping material may be used as the shaping material M.

[0019] In order to form the three-dimensional structure ST, as shown in FIGS. 1 and 2, the processing system SYSa includes a material supply source 1, a plurality of processing light sources 2, a processing device 3, a stage device 4, a gas supply source 5, and a control device 6. The processing device 3 and the stage device 4 may be housed in the chamber space 73IN inside the housing 7.

[0020] The material supply source 1 supplies the shaping material M to the processing device 3. The material supply source 1 supplies a desired amount of the shaping material M corresponding to the required amount so that the amount of the shaping material M required per unit time for forming the three-dimensional structure ST is supplied to the processing device 3.

[0021] Each of the plurality of processing light sources 2 emits, as processing light EL, at least one of, for example, infrared light, visible light, and ultraviolet light. However, other types of light may be used as the processing light EL. The processing light EL may include pulsed light (i.e., pulsed beam). The processing light EL may be laser light. In this case, each of the plurality of processing light sources 2 may include a laser light source (e.g., a semiconductor laser such as a laser diode (LD)). The laser light source may include at least one of a fiber laser, a CO 2 laser, a YAG laser, an excimer laser, etc. However, the processing light EL may not be laser light. In this case, the processing light source 2 that emits the processing light EL that is not laser light may include any light source (e.g., at least one of an LED (Light Emitting Diode) and a discharge lamp). In the first embodiment, an example will be described in which the processing system SYSa includes four processing light sources 2 (specifically, the processing light source 2#1 that emits the processing light EL#1, the processing light source 2#2 that emits the processing light EL#2, the processing light source 2#3 that emits the processing light EL#3, and the processing light source 2#4 that emits the processing light EL#4). However, the number of the processing light sources 2 may be 3 or less, or may be 5 or more.

[0022] The processing device 3 forms a three-dimensional structure ST by processing the modeling material M supplied from the material supply source 1 using the processing lights EL#1 to EL#4 propagating from the processing light sources 2#1 to 2#4, respectively. In order to form the three-dimensional structure ST, the processing device 3 includes a processing head 31 and a head drive system 32. However, the processing device 3 may not include the head drive system 32. Further, the processing head 31 includes an irradiation optical system 311 and a material nozzle (i.e., a material supply device that supplies the modeling material M) 312. The processing head 31 and the head drive system 32 are housed in the chamber space 73IN. However, at least a part of the processing head 31 and / or the head drive system 32 may be arranged in an external space 74OUT that is a space outside the housing 7. The external space 74OUT may be a space accessible by an operator of the processing system SYSa.

[0023] Here, in addition to FIGS. 1 and 2, further description will be added to the processing head 31 (that is, the irradiation optical system 311 and the material nozzle 312) with reference to FIGS. 3 and 4. FIGS. 3 and 4 are cross-sectional views showing the structure of the processing head 31 (that is, the irradiation optical system 311 and the material nozzle 312).

[0024] As shown in FIGS. 1 to 4, the irradiation optical system 311 is an optical system into which the processing lights EL#1 to EL#4 respectively propagating from the processing light sources 2#1 to 2#4 are incident. The irradiation optical system 311 is an optical system for emitting the processing lights EL#1 to EL#4 incident on the irradiation optical system 311. Specifically, the irradiation optical system 311 is optically connected via a plurality of optical transmission members 21 including at least one of an optical fiber and a light pipe and the like, to the processing light sources 2#1 to 2#4. More specifically, the irradiation optical system 311 is optically connected to the processing light source 2#1 via the optical transmission member 21#1, optically connected to the processing light source 2#2 via the optical transmission member 21#2, optically connected to the processing light source 2#3 via the optical transmission member 21#3, and optically connected to the processing light source 2#4 via the optical transmission member 21#4. The irradiation optical system 311 emits the processing lights EL#1 to EL#4 propagating from the processing light sources 2#1 to 2#4 via the optical transmission members 21#1 to 21#4. The irradiation optical system 311 emits the processing lights EL#1 to EL#4 downward (that is, the -Z side) from the irradiation optical system 311. A stage 41 is disposed below the irradiation optical system 311. When a workpiece W is placed on the stage 41, the irradiation optical system 311 emits the processing lights EL#1 to EL#4 toward the workpiece W.

[0025] The irradiation optical system 311 may condense the processing lights EL#1 to EL#4 emitted toward the workpiece W onto the workpiece W. In order to condense the processing lights EL#1 to EL#4, the irradiation optical system 311 may include a condensing optical system 3111. The condensing optical system 3111 is an optical system including a plurality of optical members 3112 (for example, lenses), but may also be an optical system including a single optical member 3112. The processing lights EL#1 to EL#4 are emitted toward the workpiece W from the terminal optical member 3114 that is located closest to the workpiece W (in the example shown in FIGS. 3 and 4, located on the most -Z side) along the optical paths of the processing lights EL#1 to EL#4 among the plurality of optical members 3112 (particularly, the plurality of optical members 3112 having power) included in the condensing optical system 3111. Incidentally, the terminal optical member 3114 may also be referred to as the final optical member.

[0026] The processing lights EL#1 to EL#4 emitted from the condensing optical system 3111 are condensed on a condensing surface FP which is a virtual optical surface intersecting the optical axis AX of the condensing optical system 3111 (that is, the optical axis of the irradiation optical system 311). For this reason, the condensing optical system 3111 may also be regarded as an optical system for condensing the processing lights EL#1 to EL#4 incident on the pupil plane (entrance pupil plane) of the condensing optical system 3111 onto the condensing surface FP of the condensing optical system 3111. Here, the state where "the processing lights EL#1 to EL#4 are condensed on the condensing surface FP" in the first embodiment may mean the state where "the processing lights EL#1 to EL#4 are superimposed on the condensing surface FP". That is, the state where "the processing lights EL#1 to EL#4 are condensed on the condensing surface FP" in the first embodiment may mean the state where "the processing lights EL#1 to EL#4 are irradiated at the same position on the condensing surface FP". Such a condensing surface FP is typically set at the rear focal position of the condensing optical system 3111. Incidentally, FIGS. 3 and 4 show an example where the condensing surface FP coincides with the surface WS of the workpiece W. Incidentally, in the first embodiment, since the optical axis AX is an axis along the Z axis, the condensing surface FP is a surface intersecting the Z axis (for example, a surface along the XY plane). Incidentally, in this example, the entrance pupil plane of the condensing optical system 3111 is located outside (the incident side) of the condensing optical system 3111, but the entrance pupil plane of the condensing optical system 3111 may be located inside the condensing optical system 3111.

[0027] Within the light condensing optical system 3111, the optical paths of the processing lights EL#1 to EL#4 (that is, the paths along which the processing lights EL#1 to EL#4 travel) may be optically separated. That is, within the light condensing optical system 3111, the optical paths of the processing lights EL#1 to EL#4 may be different from each other. Within the light condensing optical system 3111, the optical paths of the processing lights EL#1 to EL#4 may not overlap with each other.

[0028] To optically separate the optical paths of the processing lights EL#1 to EL#4, for example, as shown in FIG. 5 which is a cross-sectional view showing the optical paths of the processing lights EL#1 to EL#4 within a virtual optical surface OP (typically a surface along the XY plane, for example, the entrance pupil surface of the light condensing optical system 3111) within the light condensing optical system 3111 that intersects the optical axis AX of the light condensing optical system 3111, within the optical surface OP, the processing lights EL#1 to EL#4 may each pass through separate regions that are separated from each other in different directions from the optical axis AX. In this case, within the optical surface OP, the distance between the optical axis AX and the optical path of the processing light EL#1, the distance between the optical axis AX and the optical path of the processing light EL#2, the distance between the optical axis AX and the optical path of the processing light EL#3, and the distance between the optical axis AX and the optical path of the processing light EL#4 may be the same as each other. Alternatively, the distances between the optical axis AX and at least two of the optical paths of the processing lights EL#1 to EL#4 may be different from each other. In the examples shown in FIGS. 3 to 5, within the optical surface OP, the distances between the optical axis AX and the optical paths of the processing lights EL#1 to EL#4 are the same as each other. In this case, the processing lights EL#1 to EL#4 may pass through regions that are symmetric with respect to the optical axis AX within the optical surface OP (regions that are rotationally symmetric about the optical axis AX n times within the optical surface OP (where n is an integer of 2 or more)). For example, as shown in FIG. 5, the processing lights EL#1 to EL#4 may pass through four regions (regions that are rotationally symmetric about the optical axis AX four times within the optical surface OP) in which the rotational angles in the clockwise direction about the origin are 270 degrees, 90 degrees, 0 degrees, and 180 degrees (or θ (θ is an arbitrary angle) + 270 degrees, θ + 90 degrees, θ degrees, and θ + 180 degrees) in the coordinate plane along the XY plane with the optical axis AX as the origin.

[0029] When the processing lights EL#1 to EL#4 pass through separate regions that are separated from the optical axis AX in different directions within the optical surface OP, the condensing optical system 3111 may irradiate the workpiece W with the processing lights EL#1 to EL#4 from different directions. Specifically, as shown in FIGS. 3 to 5, the condensing optical system 3111 may irradiate the workpiece W with the processing lights EL#1 to EL#4 from different positions in the rotational direction around the optical axis AX.

[0030] Alternatively, in order to optically separate the optical paths of the processing lights EL#1 to EL#4, within the optical surface OP, the processing lights EL#1 to EL#4 may pass through separate regions that are separated from the optical axis AX by different distances in the same direction. For example, as shown in FIG. 6, which is a cross-sectional view showing another example of the optical paths of the processing lights EL#1 to EL#4 irradiated onto the workpiece W via the condensing optical system 3111, and FIG. 7, which is a cross-sectional view showing another example of the regions through which the processing lights EL#1 to EL#4 pass within the optical surface OP, the processing lights EL#1 to EL#4 may pass through separate regions that are separated from the optical axis AX by different distances toward the +Y side. That is, the processing lights EL#1 to EL#4 may pass through separate regions that are separated from the optical axis AX in the same direction such that the distances between the optical axis AX and the optical paths of the processing lights EL#1, EL#2, EL#3, and EL#4 are different from each other.

[0031] When the processing lights EL#1 to EL#4 pass through separate regions that are separated from the optical axis AX by different distances in the same direction within the optical surface OP, the condensing optical system 3111 may irradiate the workpiece W with the processing lights EL#1 to EL#4 such that the angles formed between the traveling directions of the processing lights EL#1 to EL#4 advancing from the condensing optical system 3111 toward the workpiece W and the optical axis AX are different from each other. Specifically, as shown in FIG. 6, the condensing optical system 3111 may irradiate the workpiece W with the processing lights EL#1 to EL#4 such that the angle formed between the traveling direction of the processing light EL#1 and the optical axis AX, the angle formed between the traveling direction of the processing light EL#2 and the optical axis AX, the angle formed between the traveling direction of the processing light EL#3 and the optical axis AX, and the angle formed between the traveling direction of the processing light EL#4 and the optical axis AX are different from each other.

[0032] In addition, in order to change the traveling directions of the plurality of processing lights EL#1 to EL#4 advancing from the condensing optical system 3111 toward the workpiece W, the positions along the XY plane (a plane parallel to the optical surface OP) of the respective emission ends of the optical transmission members 21#1 to 21#4 may be changeable. Also, the positions along the Z direction of the respective emission ends of the optical transmission members 21#1 to 21#4 may be changeable. Further, the traveling directions of the processing lights EL#1 to EL#4 emitted from the optical transmission members 21#1 to 21#4 (the traveling directions of the processing lights EL#1 to EL#4 between the optical transmission members 21#1 to 21#4 and the condensing optical system) may be changeable.

[0033] Each optical member 3112 constituting the light condensing optical system 3111 is formed with an opening 3113 that penetrates the optical member 3112 in the direction along the optical axis AX. The opening 3113 may be formed at a position where the optical member 3112 and the optical axis AX overlap. That is, the opening 3113 may be formed on the optical axis AX. At least a part of the material nozzle 312 is disposed in the plurality of openings 3113 respectively formed in the plurality of optical members 3112. At least a part of the material nozzle 312 is inserted into the plurality of openings 3113. At this time, the material nozzle 312 may be inserted into the opening 3113 such that the supply outlet 314 at the tip of the material nozzle 312 is disposed outside the opening 3113. For this reason, the material nozzle 312 is disposed such that at least a part of the material nozzle 312 is surrounded by the plurality of optical members 3112. When the opening 3113 is formed on the optical axis AX, at least a part of the material nozzle 312 may be disposed along the optical axis AX in the plurality of openings 3113. In this case, at least a part of the material nozzle 312 may be disposed on the optical axis AX.

[0034] When the opening 3113 is formed in each optical member 3112, the processing lights EL#1 to EL#4 pass through the portion of each optical member 3112 where the opening 3113 is not formed. When the opening 3113 is formed on the optical axis AX as described above, the processing lights EL#1 to EL#4 pass through the portion of each optical member 3112 that is away from the optical axis AX. In this case, typically, the processing lights EL#1 to EL#4 may travel from the light condensing optical system 3111 toward the workpiece W along a direction inclined with respect to the optical axis AX. That is, the light condensing optical system 3111 may emit the processing lights EL#1 to EL#4 along a direction inclined with respect to the optical axis AX.

[0035] When an opening 3113 is formed in each optical member 3112, the purge gas supplied from the gas supply source 5 to the chamber space 73IN may be supplied to the space on the emission surface side of the terminal optical member 3114 (that is, the space on the workpiece W side) through the opening 3113. Specifically, the purge gas supplied from the gas supply source 5 to the chamber space 73IN may be supplied between the plurality of optical members 3112 constituting the condenser optical system 3111. The purge gas supplied between the plurality of optical members 3112 constituting the condenser optical system 3111 may be supplied to the space on the emission surface side of the terminal optical member 3114 through the opening 3113 (particularly, the opening 3113 of the terminal optical member 3114).

[0036] The material nozzle 312 is formed with a supply outlet 314. The material nozzle 312 supplies (for example, injects, sprays, ejects, or sprays) the modeling material M from the supply outlet 314. The material nozzle 312 is physically connected to a material supply source 1 that is a supply source of the modeling material M via a supply pipe 11 and a mixing device 12. The material nozzle 312 supplies the modeling material M supplied from the material supply source 1 via the supply pipe 11 and the mixing device 12. The material nozzle 312 may pump the modeling material M supplied from the material supply source 1 via the supply pipe 11. That is, the modeling material M from the material supply source 1 and the gas for conveyance (that is, the pressure-feeding gas, for example, an inert gas such as nitrogen or argon) may be pressure-fed to the material nozzle 312 via the supply pipe 11 after being mixed by the mixing device 12. As a result, the material nozzle 312 supplies the modeling material M together with the gas for conveyance. As the gas for conveyance, for example, a purge gas supplied from a gas supply source 5 is used. However, as the gas for conveyance, a gas supplied from a gas supply source different from the gas supply source 5 may be used. Incidentally, in FIGS. 3 to 4, the material nozzle 312 is depicted in a tube shape, but the shape of the material nozzle 312 is not limited to this shape. The material nozzle 312 supplies the modeling material M downward (that is, toward the -Z side) from the material nozzle 312. At this time, since the material nozzle 312 is disposed in the opening 3113 of the optical member 3112, the material nozzle 312 may be regarded as supplying the modeling material M through the opening 3113 (particularly, the opening 3113 of the terminal optical member 3114) of the optical member 3112. The material nozzle 312 may be regarded as supplying the modeling material M through the space inside the optical path of the processing light EL#1 to EL#4 that is ejected through the portion of the optical member 3112 where the opening 3113 is not formed. A stage 41 is disposed below the material nozzle 312. When a workpiece W is mounted on the stage 41, the material nozzle 312 supplies the modeling material M toward the workpiece W or the vicinity of the workpiece W.

[0037] The material nozzle 312 supplies the modeling material M to the workpiece W from a direction intersecting the surface WS of the workpiece W. In the example shown in FIGS. 3 to 4, the material nozzle 312 supplies the modeling material M to the workpiece W from the Z-axis direction intersecting the surface WS of the workpiece W. That is, the material nozzle 312 supplies the modeling material M such that the supply path of the modeling material M from the material nozzle 312 to the workpiece W is a path along the Z-axis direction. In this case, the direction in which the material nozzle 312 supplies the modeling material M to the workpiece W (that is, the direction along the Z-axis, the optical axis direction of the condensing optical system 3111) may be different from the direction in which the condensing optical system 3111 emits the processing light EL#1 to EL#4 toward the workpiece W (that is, the direction inclined with respect to the Z-axis or the optical axis AX). That is, the supply direction of the modeling material M by the material nozzle 312 (which may be referred to as the material supply direction) may be different from the irradiation direction of the processing light EL#1 to EL#4 by the condensing optical system 3111.

[0038] In the present embodiment, the material nozzle 312 is aligned with the irradiation optical system 311 so as to supply the modeling material M toward the target irradiation region EA (that is, the position where the irradiation optical system 311 irradiates the processing light EL#1 to EL#4). That is, the material nozzle 312 and the irradiation optical system 311 are aligned such that the target supply region MA set on or near the workpiece W as the region where the material nozzle 312 supplies the modeling material M coincides with (or at least partially overlaps) the target irradiation region EA. As will be described later, a molten pool MP is formed on the workpiece W by the processing light EL#1 to EL#4 emitted from the irradiation optical system 311. The material nozzle 312 may be aligned with the irradiation optical system 311 so as to supply the modeling material M to the molten pool MP. However, the material nozzle 312 does not necessarily have to supply the modeling material M to the molten pool MP. For example, the processing system SYSa may melt the modeling material M from the material nozzle 312 by the processing light EL#1 to EL#4 from the irradiation optical system 311 before the modeling material M reaches the workpiece W, and attach the melted modeling material M to the workpiece W.

[0039] As described above, the opening 3113 where the material nozzle 312 is disposed is used as a supply path for the purge gas supplied to the space on the emission surface side of the terminal optical member 3114. In this case, the purge gas supplied through the opening 3113 forms, for example, a gas flow directed toward the supply outlet 314 at the tip of the material nozzle 312. As a result, due to such a gas flow, the modeling material M from the supply outlet 314 is more likely to be supplied along the supply path downward from the material nozzle 312. That is, the possibility that the modeling material M from the supply outlet 314 scatters in all directions from the material nozzle 312 is reduced. As a result, the material nozzle 312 can appropriately supply the modeling material M. That is, the processing system SYSa can improve the directivity of the supply direction of the modeling material M.

[0040] Again referring to FIGS. 1 and 2, the head drive system 32 moves the processing head 31. The head drive system 32 moves the processing head 31 along, for example, at least one of the X-axis, Y-axis, Z-axis, θX direction, θY direction, and θZ direction. When the head drive system 32 moves the processing head 31, the relative positions of the processing head 31 with respect to the stage 41 and the workpiece W placed on the stage 41 change. That is, the relative positions of the irradiation optical system 311 and the material nozzle 312 with respect to the stage 41 and the workpiece W change. Further, when the relative positions of the processing head 31 with respect to the stage 41 and the workpiece W change, the target irradiation region EA and the target supply region MA (and further, the melting pool MP) move with respect to the workpiece W. For this reason, the head drive system 32 may function as a moving device that moves the target irradiation region EA and the target supply region MA (and further, the melting pool MP) with respect to the workpiece W.

[0041] When the head drive system 32 moves the processing head 31 along the Z-axis direction (i.e., the direction along the optical axis AX of the condensing optical system 3111), the distance DS between the condensing surface FP of the condensing optical system 3111 where the processing lights EL#1 to EL#4 are condensed and the surface WS of the workpiece W changes. Therefore, the head drive system 32 may function as a distance changing device for changing the distance DS between the condensing surface FP of the condensing optical system 3111 and the surface WS of the workpiece W in the Z-axis direction.

[0042] The head drive system 32 may change the distance DS between the condensing surface FP and the surface WS of the workpiece W in the Z-axis direction so that the condensing surface FP of the condensing optical system 3111 coincides with the surface WS of the workpiece W (or the shaping surface MS to be described later, the same hereinafter) in the Z-axis direction. That is, the head drive system 32 may change the distance DS so that the distance DS becomes zero. In this case, as shown in Fig. 8(a) which is a plan view showing the processing lights EL#1 to EL#4 irradiated on the workpiece W and Fig. 8(b) which is a cross-sectional view showing the processing lights EL#1 to EL#4 irradiated on the workpiece W, the processing lights EL#1 to EL#4 are condensed on the surface WS of the workpiece W. That is, the processing lights EL#1 to EL#4 are superimposed on the surface WS of the workpiece W. In this case, a single beam spot irradiated with the processing lights EL#1 to EL#4 is formed on the surface WS of the workpiece W.

[0043] The head drive system 32 may change the distance DS between the condensing surface FP and the surface WS of the work W in the Z-axis direction so that the condensing surface WS of the condensing optical system 3111 deviates from the surface WS of the work W in the Z-axis direction. That is, the head drive system 32 may change the distance DS so that the distance DS becomes a value different from zero. In this case, as shown in Fig. 9(a), which is a plan view showing the processing lights EL#1 to EL#4 irradiated on the work W, and Fig. 9(b), which is a cross-sectional view showing the processing lights EL#1 to EL#4 irradiated on the work W, the processing lights EL#1 to EL#4 are not condensed on the surface WS of the work W. That is, the processing lights EL#1 to EL#4 are not superimposed on the surface WS of the work W. In this case, four beam spots are formed on the surface WS of the work W, on each of which the processing lights EL#1 to EL#4 are irradiated. The positional relationship and the sizes of the four beam spots change depending on the distance between the condensing surface of the condensing optical system 3111 and the surface of the work W in the Z-axis direction. In the example shown in Fig. 9(a), the four beam spots do not overlap each other, but at least two of the four beam spots may partially overlap. Also, in the examples shown in Fig. 9(a) and Fig. 9(b), the processing lights EL#1 to EL#4 do not intersect each other, but the processing lights EL#1 to EL#4 may be irradiated on the surface WS of the work W in a state where they are separated from each other after intersecting each other.

[0044] When the distance DS between the condensing surface FP of the condensing optical system 3111 and the surface WS of the work W in the Z-axis direction is changed in this way, the irradiation state of the processing lights EL#1 to EL#4 on the surface WS of the work W changes. As a result, the distribution (for example, intensity distribution) of the processing lights EL#1 to EL#4 on the surface WS of the work W changes. For this reason, the head drive system 32 may function as a device for changing the distribution (for example, intensity distribution) of the processing lights EL#1 to EL#4 on the surface WS of the work W.

[0045] Again, in FIGS. 1 and 2, the stage device 4 includes a stage 41 and a stage drive system 42. However, the stage device 4 may not include the stage drive system 42. Note that the stage 41 may be referred to as a table.

[0046] The stage 41 can support the workpiece W. Note that the state where the "stage 41 supports the workpiece W" here may mean a state where the workpiece W is directly or indirectly supported by the stage 41. The stage 41 may be able to hold the workpiece W placed on the stage 41. That is, the stage 41 may support the workpiece W by holding the workpiece W. In this case, the stage 41 may be provided with a mechanical chuck, a vacuum suction chuck, or the like to hold the workpiece W. Alternatively, the stage 41 may not be able to hold the workpiece W. At this time, the workpiece W may be placed on the stage 41 by a clamp press. Further, when the workpiece W is held, the stage 41 may be able to release the held workpiece W. The above-described irradiation optical system 311 irradiates the workpiece W with the processing light EL#1 to EL#4 at least in part of the period during which the stage 41 supports the workpiece W. Further, the above-described material nozzle 312 supplies the modeling material M at least in part of the period during which the stage 41 supports the workpiece W.

[0047] The stage drive system 42 moves the stage 41. For this reason, the stage drive system 42 may be referred to as a moving device. The stage drive system 42 moves the stage 41 along at least one of, for example, the X-axis, Y-axis, Z-axis, θX direction, θY direction, and θZ direction. When the stage drive system 42 moves the stage 41, the relative positions of the processing head 31 with respect to the stage 41 and the workpiece W placed on the stage 41 change. For this reason, the stage drive system 42 may function as a moving device that relatively moves the target irradiation region EA and the target supply region MA (and further, the melting pool MP) with respect to the workpiece W, similarly to the head drive system 32. Further, when the stage drive system 42 moves the stage 41 along the Z-axis direction (that is, the direction along the optical axis AX of the condensing optical system 3111), the distance DS between the condensing surface FP of the condensing optical system 3111 where the processing lights EL#1 to EL#4 are condensed and the surface WS of the workpiece W changes. For this reason, the stage drive system 42 may function as a distance changing device for changing the distance DS between the condensing surface FP of the condensing optical system 3111 and the surface WS of the workpiece W in the Z-axis direction, similarly to the head drive system 32. The stage drive system 42 may function as a device for changing the distribution (for example, intensity distribution) of the processing lights EL#1 to EL#4 on the surface WS of the workpiece W, similarly to the head drive system 32.

[0048] The gas supply source 5 is a supply source of purge gas for purging the chamber space 73IN. The purge gas contains an inert gas. As an example of the inert gas, nitrogen gas or argon gas can be given. The gas supply source 5 is connected to the chamber space 73IN via a supply port 72 formed in the partition member 71 of the housing 7 and a supply pipe 51 that connects the gas supply source 5 and the supply port 72. The gas supply source 5 supplies purge gas to the chamber space 73IN via the supply pipe 51 and the supply port 72. As a result, the chamber space 73IN becomes a space purged with the purge gas. Incidentally, the gas supply source 5 may be a cylinder storing an inert gas such as nitrogen gas or argon gas. When the inert gas is nitrogen gas, the gas supply source 5 may be a nitrogen gas generation device that generates nitrogen gas using air as a raw material.

[0049] As described above, when the material nozzle 312 supplies the modeling material M together with the purge gas, the gas supply source 5 may supply the purge gas to the mixing device 12 to which the modeling material M from the material supply source 1 is supplied. Specifically, the gas supply source 5 may be connected to the mixing device 12 via a supply pipe 52 that connects the gas supply source 5 and the mixing device 12. As a result, the gas supply source 5 supplies the purge gas to the mixing device 12 via the supply pipe 52. In this case, the modeling material M from the material supply source 1 may be supplied (specifically, pumped) through the supply pipe 11 toward the material nozzle 312 by the purge gas supplied from the gas supply source 5 via the supply pipe 52. That is, the gas supply source 5 may be connected to the material nozzle 312 via the supply pipe 52, the mixing device 12, and the supply pipe 11. In that case, the material nozzle 312 supplies the modeling material M together with the purge gas for pumping the modeling material M from the supply outlet 314.

[0050] The control device 6 controls the operation of the processing system SYSa. The control device 6 may include, for example, an arithmetic unit and a storage device. The arithmetic unit may include, for example, at least one of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), and an FPGA (Field Programable Gate Array). The storage device may include, for example, a memory. The control device 6 functions as a device that controls the operation of the processing system SYSa by the arithmetic unit executing a computer program. This computer program is a computer program for causing the arithmetic unit to perform the operations described later that the control device 6 should perform (that is, execute). That is, this computer program is a computer program for causing the control device 6 to function so as to cause the processing system SYSa to perform the operations described later. The computer program executed by the arithmetic unit may be recorded in the storage device (that is, the recording medium) provided in the control device 6, or may be recorded in any storage medium (for example, a hard disk or a semiconductor memory) built in the control device 6 or externally attachable to the control device 6. Alternatively, the arithmetic unit may download the computer program to be executed from a device external to the control device 6 via a network interface.

[0051] For example, the control device 6 may control the emission modes of the processing light EL#1 to EL#4 by the irradiation optical system 311. The emission mode may include, for example, at least one of the intensity of the processing light EL#1 to EL#4 and the emission timing of the processing light EL#1 to EL#4. When the processing light EL#1 to EL#4 includes a plurality of pulsed lights, the emission mode may include, for example, at least one of the emission time of the pulsed light, the emission period of the pulsed light, and the ratio of the emission time length of the pulsed light to the emission period of the pulsed light (so-called duty ratio). Further, the control device 6 may control the movement mode of the processing head 31 by the head drive system 32. The control device 6 may control the movement mode of the stage 41 by the stage drive system 42. The movement mode may include, for example, at least one of the movement amount, the movement speed, the movement direction, and the movement timing (movement time). Further, the control device 6 may control the supply mode of the modeling material M by the material nozzle 312. The supply mode may include, for example, at least one of the supply amount (particularly, the supply amount per unit time) and the supply timing (supply time).

[0052] The control device 6 does not necessarily have to be provided inside the processing system SYSa. For example, the control device 6 may be provided outside the processing system SYSa as a server or the like. In this case, the control device 6 and the processing system SYSa may be connected by a wired and / or wireless network (or a data bus and / or communication line). As the wired network, for example, a network using an interface of a serial bus system represented by at least one of IEEE1394, RS-232x, RS-422, RS-423, RS-485, and USB may be used. As the wired network, a network using an interface of a parallel bus system may be used. As the wired network, a network using an interface compliant with Ethernet (registered trademark) represented by at least one of 10BASE-T, 100BASE-TX, and 1000BASE-T may be used. As the wireless network, a network using radio waves may be used. As an example of a network using radio waves, a network compliant with IEEE802.1x (for example, at least one of wireless LAN and Bluetooth (registered trademark)) can be given. As the wireless network, a network using infrared rays may be used. As the wireless network, a network using optical communication may be used. In this case, the control device 6 and the processing system SYSa may be configured to be able to transmit and receive various kinds of information via the network. Also, the control device 6 may be able to transmit information such as commands and control parameters to the processing system SYSa via the network. The processing system SYSa may include a receiving device that receives information such as commands and control parameters from the control device 6 via the above network. The processing system SYSa may include a transmitting device (that is, an output device that outputs information to the control device 6) that transmits information such as commands and control parameters to the control device 6 via the above network. Alternatively, a first control device that performs a part of the processing performed by the control device 6 may be provided inside the processing system SYSa, while a second control device that performs another part of the processing performed by the control device 6 may be provided outside the processing system SYSa.

[0053] As a recording medium for recording the computer program executed by the control device 6, at least one of optical discs such as CD-ROM, CD-R, CD-RW, flexible disk, MO, DVD-ROM, DVD-RAM, DVD-R, DVD+R, DVD-RW, DVD+RW, and Blu-ray (registered trademark), magnetic media such as magnetic tape, magneto-optical disk, semiconductor memory such as USB memory, and any other medium capable of storing a program may be used. The recording medium may include a device capable of recording a computer program (for example, a general-purpose device or a dedicated device in which the computer program is implemented in a state executable in at least one of the forms of software and firmware). Further, each process and function included in the computer program may be realized by a logical processing block realized in the control device 6 by the control device 6 (that is, a computer) executing the computer program, or may be realized by hardware such as a predetermined gate array (FPGA, ASIC) provided in the control device 6, or may be realized in a form in which a logical processing block and a partial hardware module realizing some elements of the hardware are mixed.

[0054] The housing 7 is a housing device that houses at least a part of each of at least the processing device 3 and the stage device 4 in the chamber space 73IN which is the internal space of the housing 7. The housing 7 includes a partition member 71 that defines the chamber space 73IN. The partition member 71 is a member that separates the chamber space 73IN from the external space 74OUT of the housing 7. The partition member 71 faces the chamber space 73IN through its inner wall 711 and faces the external space 74OUT through its outer wall 712. In this case, the space surrounded by the partition member 71 (more specifically, the space surrounded by the inner wall 711 of the partition member 71) becomes the chamber space 73IN. Incidentally, the partition member 71 may be provided with an openable and closable door. This door may be opened when placing the workpiece W on the stage 41. The door may be opened when taking out the workpiece W and / or the shaped object from the stage 41. The door may be closed during processing (that is, during additive processing or joining processing). An observation window (not shown) for visually recognizing the chamber space 73IN from the external space 74OUT of the housing 7 may be provided in the partition member 71.

[0055] (1-2) Operation of machining system SYSa Subsequently, the operation of the processing system SYSa will be described. In the first embodiment, the processing system SYSa performs an additive processing operation for forming a three-dimensional structure ST on the workpiece W. Further, the processing system SYSa performs an optical property control operation for controlling at least one property of at least one of the processing lights EL#1 to EL#4 during at least a part of the period of performing the additive processing operation. For this reason, hereinafter, the additive processing operation and the optical property control operation will be described in order. (1-2-1) Additional machining operation First, the additive processing operation will be described. As described above, the processing system SYSa forms the three-dimensional structure ST by the laser cladding method. For this reason, the processing system SYSa may form the three-dimensional structure ST by performing an existing additive processing operation (in this case, a shaping operation) compliant with the laser cladding method. Hereinafter, an example of the additive processing operation for forming the three-dimensional structure ST using the laser cladding method will be briefly described.

[0056] The processing system SYSa forms a three-dimensional structure ST on a workpiece W based on three-dimensional model data (e.g., CAD (Computer Aided Design) data, etc.) of the three-dimensional structure ST to be formed. As the three-dimensional model data, measurement data of a three-dimensional object measured by at least one of a measuring device (not shown) provided in the processing system SYSa and a three-dimensional shape measuring machine provided separately from the processing system SYSa may be used. The processing system SYSa forms, in order, a plurality of layered partial structures (hereinafter referred to as "structural layers") SL arranged along the Z-axis direction in order to form the three-dimensional structure ST. For example, the processing system SYSa forms, in order, one by one, a plurality of structural layers SL obtained by slicing the three-dimensional structure ST along the Z-axis direction. As a result, a three-dimensional structure ST, which is a laminated structure in which a plurality of structural layers SL are laminated, is formed. Hereinafter, the flow of the operation of forming the three-dimensional structure ST by forming the plurality of structural layers SL one by one in order will be described.

[0057] First, the operation of forming each structural layer SL will be described with reference to FIGS. 10(a) to 10(e). Under the control of the control device 6, the processing system SYSa moves at least one of the processing head 31 and the stage 41 so that a target irradiation area EA is set in a desired area on the shaping surface MS corresponding to the surface WS of the workpiece W or the surface of the formed structural layer SL. Then, the processing system SYSa irradiates the processing light EL#1 to EL#4 from the irradiation optical system 311 onto the target irradiation area EA. At this time, in the Z-axis direction, the condensing surface FP where the processing light EL#1 to EL#4 is condensed may coincide with the shaping surface MS (see FIGS. 8(a) and 8(b)). Alternatively, in the Z-axis direction, the condensing surface FP where the processing light EL#1 to EL#4 is condensed may deviate from the shaping surface MS (see FIGS. 9(a) and 9(b)). When the processing light EL#1 to EL#4 is irradiated onto the shaping surface MS, as shown in FIG. 10(a), a molten pool (that is, a pool of metal melted by the processing light EL#1 to EL#4) MP is formed on the shaping surface MS irradiated with the processing light EL#1 to EL#4. Further, the processing system SYSa supplies the shaping material M from the material nozzle 312 under the control of the control device 6. Here, since the target supply area MA where the shaping material M is supplied as described above coincides with the target irradiation area EA, the target supply area MA includes at least a part of the area where the molten pool MP is formed. Therefore, the processing system SYSa supplies the shaping material M from the material nozzle 312 to the molten pool MP as shown in FIG. 10(b). As a result, the shaping material M supplied to the molten pool MP melts. Then, when the processing light EL is no longer irradiated onto the molten pool MP as at least one of the processing head 31 and the stage 41 moves, the shaping material M melted in the molten pool MP is cooled and solidified (that is, solidified). As a result, as shown in FIG. 10(c), the solidified shaping material M is deposited on the shaping surface MS. That is, a shaped object is formed by the deposit of the solidified shaping material M.

[0058] The processing system SYSa repeats a series of shaping processes including the formation of the molten pool MP by irradiation with the processing light EL#1 to EL#4, the supply of the shaping material M to the molten pool MP, the melting of the supplied shaping material M, and the solidification of the melted shaping material M, while relatively moving the processing head 31 along the XY plane with respect to the shaping surface MS as shown in FIG. 10(d). At this time, the processing system SYS irradiates the region on the shaping surface MS where it is desired to form a shaped object with the processing light EL#1 to EL#4, while not irradiating the region on the shaping surface MS where it is not desired to form a shaped object with the processing light EL#1 to EL#4. That is, the processing system SYSa irradiates the shaping surface MS with the processing light EL#1 to EL#4 at a timing according to the distribution pattern of the region where it is desired to form a shaped object while moving the target irradiation region EA along a predetermined movement trajectory on the shaping surface MS. As a result, the molten pool MP also moves on the shaping surface MS along a movement trajectory corresponding to the movement trajectory of the target irradiation region EA. Specifically, the molten pool MP is sequentially formed on the portion of the region along the movement trajectory of the target irradiation region EA on the shaping surface MS that is irradiated with the processing light EL#1 to EL#4. As a result, as shown in FIG. 10(e), a structural layer SL corresponding to an aggregate of shaped objects made of the shaping material M that has solidified after melting is formed on the shaping surface MS. That is, a structural layer SL (that is, in plan view, a structural layer SL having a shape corresponding to the movement trajectory of the molten pool MP) corresponding to an aggregate of shaped objects formed on the shaping surface MS in a pattern corresponding to the movement trajectory of the molten pool MP is formed. Incidentally, when the target irradiation region EA is set in a region where it is not desired to form a shaped object, the processing system SYSa may irradiate the target irradiation region EA with the processing light EL#1 to EL#4 and stop the supply of the shaping material M. Further, when the target irradiation region EA is set in a region where it is not desired to form a shaped object, the processing system SYSa may supply the shaping material M to the target irradiation region EA and irradiate the target irradiation region EA with the processing light EL#1 to EL#4 having an intensity that does not allow the formation of the molten pool MP.

[0059] The processing system SYSa repeatedly performs operations for forming such a structural layer SL under the control of the control device 6 based on three-dimensional model data. Specifically, first, the control device 6 slices the three-dimensional model data at a lamination pitch to create slice data. Note that data obtained by partially modifying this slice data may be used according to the characteristics of the processing system SYSa. The processing system SYSa performs an operation for forming the first structural layer SL#1 on the shaping surface MS corresponding to the surface WS of the workpiece W based on the three-dimensional model data corresponding to the structural layer SL#1 (that is, the slice data corresponding to the structural layer SL#1). As a result, as shown in FIG. 11(a), the structural layer SL#1 is formed on the shaping surface MS. Thereafter, the processing system SYS sets the surface (that is, the upper surface) of the structural layer SL#1 as a new shaping surface MS, and then forms the second structural layer SL#2 on the new shaping surface MS. To form the structural layer SL#2, the control device 6 first controls the head drive system 32 so that the processing head 31 moves along the Z axis. Specifically, the control device 6 controls the head drive system 32 to move the processing head 31 toward the +Z side so that the target irradiation region EA and the target supply region MA are set on the surface of the structural layer SL#1 (that is, the new shaping surface MS). Thereafter, under the control of the control device 6, the processing system SYSa forms the structural layer SL#2 on the structural layer SL#1 based on the slice data corresponding to the structural layer SL#2 by the same operation as the operation for forming the structural layer SL#1. As a result, as shown in FIG. 11(b), the structural layer SL#2 is formed. Thereafter, the same operation is repeated until all the structural layers SL constituting the three-dimensional structure ST to be formed on the workpiece W are formed. As a result, as shown in FIG. 11(c), the three-dimensional structure ST is formed by a laminated structure in which a plurality of structural layers SL are laminated.

[0060] (1-2-2) Optical property control operation Next, the optical property control operation will be described. The optical property control operation is mainly performed under the control of the control device 6. That is, the control device 6 may control (in other words, change or adjust) at least one property of the processing lights EL#1 to EL#4 during at least a part of the period in which the additional processing operation is performed by performing the optical property control operation.

[0061] The control device 6 may individually control at least one property of the processing lights EL#1 to EL#4. That is, the control device 6 may control the property of one processing light EL among the processing lights EL#1 to EL#4 regardless of whether the properties of the other processing lights EL among the processing lights EL#1 to EL#4 are controlled. At this time, the control device may control the respective properties of the processing lights EL#1 to EL#4. That is, the control device may control the property of the processing light EL#1, control the property of the processing light EL#2, control the property of the processing light EL#3, and control the property of the processing light EL#4. Alternatively, the control device may control at least one property of the processing lights EL#1 to EL#4 while not necessarily controlling at least one other property of the processing lights EL#1 to EL#4. That is, the control device 6 may fix at least one other property of the processing lights EL#1 to EL#4 while controlling at least one property of the processing lights EL#1 to EL#4. For example, the control device 6 may control the respective properties of the processing lights EL#1 and EL#2 while not necessarily controlling (or fixing) the respective properties of the processing lights EL#3 and EL#4.

[0062] The control device 6 may control at least one characteristic of the processing light EL#1 to EL#4 such that at least one characteristic of the processing light EL#1 to EL#4 is different from at least one other characteristic of the processing light EL#1 to EL#4. In other words, the control device 6 may be able to set (in other words, determine) at least one characteristic of the processing light EL#1 to EL#4 such that at least one characteristic of the processing light EL#1 to EL#4 is different from at least one other characteristic of the processing light EL#1 to EL#4. In this case, the control device 6 may control at least one characteristic of the processing light EL#1 to EL#4 such that at least one characteristic of the processing light EL#1 to EL#4 becomes the set characteristic. For example, the control device 6 may set the characteristic of the processing light EL#1 such that the characteristic of the processing light EL#1 is different from each characteristic of the processing light EL#2 to EL#4, and control the characteristic of the processing light EL#1 such that the characteristic of the processing light EL#1 becomes the set characteristic.

[0063] The characteristic of the processing light EL may include the intensity of the processing light EL. In this case, the control device 6 may control at least one intensity of the processing light EL#1 to EL#4. Here, the "intensity of the processing light EL" may mean the intensity of the processing light EL on a plane intersecting the traveling direction of the processing light EL. Typically, the "intensity of the processing light EL" may mean the intensity of the processing light EL on the shaping surface MS (for example, the surface WS of the workpiece W or the surface of the structural layer SL) where the additional processing is actually performed.

[0064] The characteristic of the processing light EL may include the intensity distribution of the processing light EL. In this case, the control device 6 may control at least one intensity distribution of the processing light EL#1 to EL#4. Here, the "intensity distribution of the processing light EL" may mean the intensity of the processing light EL within a plane intersecting the traveling direction of the processing light EL. Typically, the "intensity distribution of the processing light EL" may mean the intensity distribution of the processing light EL within the shaping surface MS (for example, the surface WS of the workpiece W or the surface of the structural layer SL) where the additional processing is actually performed.

[0065] The characteristics of the processed light EL may include the polarization distribution of the processed light EL. That is, the characteristics of the processed light EL may include the distribution of the polarization components included in the processed light EL (for example, the distribution of the polarization components in a plane intersecting the traveling direction of the processed light EL (typically, the shaping surface MS)). The characteristics of the processed light EL may include the wavelength distribution of the processed light EL. That is, the characteristics of the processed light EL may include the distribution of the light components of each wavelength or each wavelength band included in the processed light EL (for example, the distribution of the light components in a plane intersecting the traveling direction of the processed light EL (typically, the shaping surface MS)).

[0066] When the characteristics of the processed light EL (for example, at least one of the intensity and the intensity distribution) change, the state (formation state) of the molten pool MP formed by the processed light EL changes. Therefore, the control device 6 may control the formation state of the molten pool MP by controlling the characteristics of the processed light EL (for example, at least one of the intensity and the intensity distribution). The control device 6 may control the formation state of the molten pool MP so that the formation state of the molten pool MP becomes a desired formation state (that is, an ideal formation state) by controlling the characteristics of the processed light EL (for example, at least one of the intensity and the intensity distribution).

[0067] When controlling the formation state of the molten pool MP, the control device 6 may control the formation state of the molten pool MP based on the measurement results of a measuring device capable of measuring the formation state of the molten pool MP. As an example of such a measuring device, there is the measuring device 82b provided in the processing system SYSb of the second embodiment described later. However, the control device 6 may control the formation state of the molten pool MP based on the measurement results of the formation state of the molten pool MP by a measuring device different from the measuring device 82b.

[0068] The formation state of the molten pool MP may include the temperature distribution of the molten pool MP. In this case, the control device 6 may control the characteristics of the processed light EL (for example, at least one of the intensity and the intensity distribution) so that the temperature distribution of the molten pool MP becomes a desired temperature distribution (that is, an ideal temperature distribution).

[0069] When the temperature distribution of the melting pool MP changes, the size of the melting pool MP may change. For example, when the temperature distribution of the melting pool MP changes, the size (i.e., width, length) of the melting pool MP in the direction along the shaping surface MS may change. For example, when the temperature distribution of the melting pool MP changes, the size (i.e., depth) of the melting pool MP in the direction intersecting the shaping surface MS may change. Therefore, the formation state of the melting pool MP may include the size of the melting pool MP. In this case, the control device 6 may control the characteristics (e.g., at least one of intensity and intensity distribution) of the processing light EL so that the size of the melting pool MP becomes a desired size (i.e., an ideal size).

[0070] To control at least one characteristic of the processing lights EL#1 to EL#4, the control device 6 may control at least one of the processing light sources 2#1 to 2#4 that generate the processing lights EL#1 to EL#4 respectively. Specifically, the control device 6 may control the characteristic of the processing light EL#1 by controlling the processing light source 2#1. The control device 6 may control the characteristic of the processing light EL#2 by controlling the processing light source 2#2. The control device 6 may control the characteristic of the processing light EL#3 by controlling the processing light source 2#3. The control device 6 may control the characteristic of the processing light EL#4 by controlling the processing light source 2#4.

[0071] To control at least one characteristic of the processing lights EL#1 to EL#4, the control device 6 may control the distance DS in the Z-axis direction between the condensing surface FP where the condensing optical system 3111 condenses the processing lights EL#1 to EL#4 and the surface WS of the workpiece W. Because, as described above, when the distance DS changes, the distribution (e.g., intensity distribution) of the processing lights EL#1 to EL#4 on the surface WS (or the shaping surface MS) of the workpiece W changes. Therefore, the control device 6 may control at least one of the head drive system 32 and the stage drive system 42 that can change the distance DS so that at least one characteristic of the processing lights EL#1 to EL#4 becomes a desired characteristic by controlling the distance DS.

[0072] In order to control at least one characteristic of the processing light EL#1 to EL#4, the control device 6 may control an optical member included in the irradiation optical system 311 and capable of controlling at least one characteristic of the processing light EL#1 to EL#4.

[0073] The control device 6 may control at least one characteristic of the processing light EL#1 to EL#4 based on movement information regarding the movement of the target irradiation area EA on the shaping surface MS. Here, as described above, the target irradiation area EA moves along with the movement of the processing head 31 by the head drive system 32 and the movement of the stage 41 by the stage drive system 42. Therefore, the operation of controlling at least one characteristic of the processing light EL#1 to EL#4 based on the movement information regarding the movement of the target irradiation area EA may be regarded as substantially equivalent to the operation of controlling at least one characteristic of the processing light EL#1 to EL#4 based on information regarding the movement of at least one of the processing head 31 and the stage 41.

[0074] The movement information regarding the movement of the target irradiation area EA may include information regarding the movement direction of the target irradiation area EA on the shaping surface MS (that is, the movement direction of the irradiation position of the processing light EL#1 to EL#4). In this case, the control device 6 may control at least one characteristic of the processing light EL#1 to EL#4 based on the movement direction of the target irradiation area EA on the shaping surface MS. The control device 6 may control at least one characteristic of the processing light EL#1 to EL#4 based on the movement direction of at least one of the processing head 31 and the stage 41.

[0075] When controlling at least one characteristic of the processing light EL#1 to EL#4 based on the moving direction of the target irradiation area EA, the control device 6 controls at least one characteristic of the processing light EL#1 to EL#4 so that the characteristic of at least one processing light EL irradiated at a relatively forward position in the moving direction is different from the characteristic of at least one processing light EL irradiated at a relatively rearward position in the moving direction. For example, FIG. 12 is a plan view showing a target irradiation area EA (that is, the irradiation position of the processing light EL#1 to EL#4) moving in the +Y direction along the Y-axis direction on the shaping surface MS. In the example shown in FIG. 12, the irradiation position of the processing light EL#2 is located relatively forward (that is, the +Y side) in the moving direction of the target irradiation area EA, and the irradiation position of the processing light EL#1 is located relatively rearward (that is, the -Y side) in the moving direction of the target irradiation area EA. In this case, the control device 6 may control at least one characteristic of the processing light EL#1 and EL#2 so that the characteristic of the processing light EL#1 is different from the characteristic of the processing light EL#2.

[0076] As an example, as shown in FIGS. 13(a) and 13(b), which are graphs showing the intensities of the processing light EL#1 irradiated at a relatively rearward position in the moving direction and the processing light EL#2 irradiated at a relatively forward position in the moving direction, the control device 6 may control at least one characteristic (for example, intensity or intensity distribution) of the processing light EL#1 and EL#2 so that the intensity of the processing light EL#1 is smaller than the intensity of the processing light EL#2. Note that FIG. 13(a) shows an example where the intensity of the processing light EL#1 is greater than zero, and FIG. 13(b) shows an example where the intensity of the processing light EL#2 becomes zero. When the intensity of the processing light EL#1 irradiated at a relatively rearward position in the moving direction is smaller than the intensity of the processing light EL#2 irradiated at a relatively forward position in the moving direction in this way, the formation state of the melting pool MP is likely to be maintained in the desired formation state. For example, the formation state of the melting pool MP is likely to be maintained in the liquid phase state, which is an example of the desired formation state. Therefore, the processing system SYSa can appropriately process the workpiece W.

[0077] As another example, as shown in FIG. 14, which is a graph showing the intensities of the processing light EL#1 irradiated at a relatively rearward position in the moving direction and the processing light EL#2 irradiated at a relatively forward position in the moving direction, the control device 6 may control the characteristics (for example, intensity or intensity distribution) of the processing light EL#1 so that the processing light EL#1 becomes pulsed light. On the other hand, the control device 6 may control the characteristics (intensity) of the processing light EL#2 so that the processing light EL#2 becomes continuous light (CW: Continuous Wave). When the processing light EL#1 irradiated at a relatively rearward position in the moving direction becomes pulsed light while the processing light EL#2 irradiated at a relatively forward position in the moving direction becomes continuous light, the processing trace of the shaping surface MS by the processing light EL#2 is smoothed by the processing light EL#1 which is pulsed light. Therefore, the processing system SYSa can appropriately process the workpiece W. For example, the processing system SYSa can form a three-dimensional structure ST having a relatively smooth surface. Further, the control device 6 may control at least one of the processing light EL#1 and the processing light EL#2 so that the integrated light quantity of the processing light EL#1 and the integrated light quantity of the processing light EL#2 are different from each other.

[0078] In addition to or instead of the above-described movement information, the control device 6 may control at least one characteristic of the processing lights EL#1 to EL#4 based on workpiece information regarding the workpiece W to be processed. The workpiece information regarding the workpiece W may include information regarding the shape of the workpiece W. In this case, the control device 6 may control at least one characteristic of the processing lights EL#1 to EL#4 based on the shape of the workpiece W. Incidentally, when a part of the three-dimensional structure ST is already formed on the workpiece W, the information regarding the shape of the workpiece W may include information regarding the shape of the workpiece W including a part of the formed three-dimensional structure ST.

[0079] The control device 6 may control at least one characteristic (e.g., intensity or intensity distribution) of the processing lights EL#1 to EL#4 so that the intensity of the processing light EL irradiated onto the portion of the workpiece W to be processed is equal to or greater than the processable intensity that is large enough to process the workpiece W, based on the shape of the workpiece W. The control device 6 may control at least one characteristic (e.g., intensity or intensity distribution) of the processing lights EL#1 to EL#4 so that the intensity of the processing light EL irradiated onto the portion of the workpiece W that should not be processed is equal to or less than the unprocessable intensity that is small enough not to process the workpiece W, based on the shape of the workpiece W. For example, FIG. 15(a) is a sectional view showing a state where the processing lights EL#1 and EL#2 are emitted toward the target irradiation region EA in a situation where the target irradiation region EA is set in the first portion P1 to process the first portion P1 of the shaping surface MS. In the situation shown in FIG. 15(a), each of the processing lights EL#1 and EL#2 is irradiated onto the first portion P1 of the workpiece W to be processed. Therefore, in this case, the control device 6 may control the respective characteristics (e.g., intensity or intensity distribution) of the processing lights EL#1 and EL#2 so that the intensity of each of the processing lights EL#1 and EL#2 is equal to or greater than the processable intensity. On the other hand, for example, FIG. 15(b) is a sectional view showing a state where the processing lights EL#1 and EL#2 are emitted toward the target irradiation region EA in a situation where the target irradiation region EA is set in the second portion P2 to process the second portion P2 of the shaping surface MS. In the situation shown in FIG. 15(b), the processing light EL#2 is irradiated onto the second portion P2 of the workpiece W to be processed. Therefore, in this case, the control device 6 may control the characteristic (e.g., intensity or intensity distribution) of the processing light EL#2 so that the intensity of the processing light EL#2 is equal to or greater than the processable intensity. On the other hand, the processing light EL#1 is not irradiated onto the second portion P2 of the workpiece W to be processed. This is because there is a third portion P3 of the workpiece W that should not be processed on the optical path of the processing light EL#1 from the irradiation optical system 211 to the target irradiation position EA. In this case, if the third portion P3 is irradiated with the processing light EL#1, the third portion P3 may be processed unintentionally.Therefore, the control device 6 may control the characteristics (e.g., intensity or intensity distribution) of the processing light EL#1 so that the intensity of the processing light EL#1 becomes equal to or less than the non-processable intensity. At this time, the control device 6 may control the intensity of the processing light EL#1 to be zero. As a result, the processing system SYSa can appropriately process the workpiece W.

[0080] (1-3) Technical effects of machining system SYSa As described above, the processing system SYSa according to the first embodiment can individually control at least one of the plurality of processing lights EL irradiated to the workpiece W. Therefore, the processing system SYSa can appropriately process the workpiece W using the plurality of processing lights EL as compared with a comparative example processing system that cannot individually control at least one of the plurality of processing lights EL.

[0081] (1-4) Modification example of machining light EL In the example shown in FIG. 5 described above, the processing lights EL#1 to EL#4 are separated from each other in different directions from the optical axis AX within a virtual optical surface OP (e.g., the entrance pupil surface of the condenser optical system 3111) within the condenser optical system 3111 that intersects the optical axis AX of the condenser optical system 3111 and pass through separate regions that are symmetric with respect to the optical axis AX. However, as shown in FIG. 16, which is a cross-sectional view showing the optical paths of the processing lights EL#1 to EL#4 within the optical surface OP, the processing lights EL#1 to EL#4 may pass through separate regions that are separated from each other in different directions from the optical axis AX within the optical surface OP and are asymmetric with respect to the optical axis AX. In other words, the region within the optical surface OP through which the processing lights EL#1 to EL#4 pass may be rotationally symmetric about the optical axis AX once. For example, the processing lights EL#1 to EL#4 may pass through separate regions that are not line-symmetric under the condition that a straight line (e.g., a straight line along the X-axis or Y-axis) intersecting the optical axis AX within the optical surface OP is the axis of symmetry. In this case, the possibility that the return light of one processing light EL irradiated to the workpiece W enters the processing light source 2 that generates the other processing light EL through the same optical path as the optical path of the other processing light EL irradiated to the workpiece W is reduced. Therefore, the possibility that the processing light source 2 fails due to the return light entering the processing light source 2 is reduced.

[0082] Also, in the examples shown in FIGS. 8 and 9 described above, the shape of the beam spot formed by the processing light EL on the shaping surface MS (for example, the surface WS of the workpiece W or the surface of the structural layer SL) is circular. However, the shape of the beam spot formed by the processing light EL may be a shape different from a circle. For example, the shape of the beam spot formed by the processing light EL may be an elliptical shape, a rectangular shape, or a slit shape. Further, a plurality of processing lights EL may form beam spots of a desired shape on the shaping surface MS. For example, as shown in FIG. 17, which is a plan view showing an example of beam spots of a desired shape formed by a plurality of processing lights EL on the shaping surface MS, the plurality of processing lights EL may form an annular-shaped beam spot on the shaping surface MS. In this case, each processing light EL may form an arc-shaped (partial annular shape) beam spot that constitutes a part of the annulus on the shaping surface MS.

[0083] (2) Machining system SYS of the second embodiment Subsequently, with reference to FIGS. 18 and 19, the processing system SYS of the second embodiment (hereinafter, the processing system SYS of the second embodiment is referred to as "processing system SYSb") will be described. FIG. 18 is a cross-sectional view schematically showing the structure of the processing system SYSb of the second embodiment. FIG. 19 is a system configuration diagram showing the system configuration of the processing system SYSb of the second embodiment. In the following description, for the same constituent elements as those already described, the same reference numerals are given and the detailed description thereof is omitted.

[0084] As shown in FIGS. 18 and 19, the processing system SYSb of the second embodiment is different in that it includes a measurement light source 81b and a measurement device 82b as compared with the processing system SYSa of the first embodiment described above. Other features of the processing system SYSb may be the same as those of the processing system SYSa.

[0085] The measurement light source 81b emits, for example, at least one of infrared light, visible light, and ultraviolet light as measurement light ML. However, as the measurement light ML, other types of radiation (for example, at least one of terahertz waves, microwaves, and X-rays, etc.) may be used. The wavelength of the measurement light ML may be different from the wavelength of the processing light EL. The wavelength range of the measurement light ML may be different from the wavelength range of the processing light EL. However, the wavelength of the measurement light ML may be the same as the wavelength of the processing light EL. At least a part of the wavelength range of the measurement light ML may overlap (that is, may be duplicated) with at least a part of the wavelength range of the processing light EL. The measurement light ML emitted by the measurement light source 81b enters the irradiation optical system 311 through an optical transmission member 811b including at least one of an optical fiber and a light pipe. Therefore, the irradiation optical system 311 and the measurement light source 81b are optically connected through the optical transmission member 811b. The measurement light ML that has entered the irradiation optical system 311 is irradiated onto the workpiece W (more specifically, the shaping surface MS) through the irradiation optical system 311 (that is, through the condensing optical system 3111). At this time, the measurement light ML may be used as illumination light for illuminating the workpiece W. In this case, the measurement light source 81b may be referred to as an illumination device.

[0086] The irradiation optical system 311 may irradiate the measurement light ML onto an area on the workpiece W where at least one of the processing lights EL#1 to EL#4 is irradiated. The irradiation optical system 311 may irradiate the measurement light ML onto an area including at least a part of the target irradiation area EA set on the workpiece W. The irradiation optical system 311 may irradiate the measurement light ML onto an area including at least a part of the molten pool MP formed on the workpiece W. However, the irradiation optical system 311 may irradiate the measurement light ML onto an area different from the area on the workpiece W where at least one of the processing lights EL#1 to EL#4 is irradiated. The irradiation optical system 311 may irradiate the measurement light ML onto an area different from the target irradiation area EA set on the workpiece W. The irradiation optical system 311 may irradiate the measurement light ML onto an area different from the molten pool MP formed on the workpiece W.

[0087] When the measurement light ML is irradiated onto the workpiece W, return light generated by irradiating the workpiece W with the measurement light ML is emitted from the workpiece W. The return light may include at least one of reflected light, scattered light, and transmitted light of the measurement light ML by the workpiece W. Incidentally, the return light may be referred to as light directly generated by irradiating the workpiece W with the measurement light ML. Further, as described above, a molten pool MP composed of molten metal is formed on the workpiece W. In this case, light from the molten pool MP (light indirectly generated by irradiating the processing light EL) is emitted from the workpiece W. Hereinafter, both the return light generated by irradiating the workpiece W with the measurement light ML and the light generated by irradiating the processing light EL are included and referred to as object light RL. The wavelength of the object light RL (particularly, the wavelength of the return light included in the object light RL) may be different from the wavelength of the processing light EL. The wavelength range of the object light RL may be different from the wavelength range of the processing light EL. The wavelength of the object light RL may be the same as the wavelength of the processing light EL. At least a part of the wavelength range of the object light RL may overlap with at least a part of the wavelength range of the processing light EL. The object light RL emitted from the workpiece W enters the measuring device 82b through the irradiation optical system 311 (that is, through the condenser optical system 3111).

[0088] Here, with reference to FIGS. 20 and 21, the optical paths of the measurement light ML and the object light RL in the irradiation optical system 311 (particularly, in the condenser optical system 3111) will be described. FIG. 20 is a cross-sectional view showing the optical paths of the measurement light ML and the object light RL in the irradiation optical system 311 (particularly, in the condenser optical system 3111). FIG. 21 is a cross-sectional view taken along the line XX-XX' of FIG. 20. Incidentally, FIG. 20 is a cross-sectional view taken along the line XX-XX' of FIG. 21.

[0089] As shown in FIGS. 20 and 21, in the condenser optical system 3111, at least a part of the optical path of the measurement light ML, at least a part of the optical path of the object light RL, and at least a part of the optical paths of the processing lights EL#1 to EL#4 may be optically separated. That is, in the condenser optical system 3111, at least a part of the optical path of the measurement light ML, at least a part of the optical path of the object light RL, and at least a part of the optical paths of the processing lights EL#1 to EL#4 may be different from each other. In the condenser optical system 3111, at least a part of the optical path of the measurement light ML, at least a part of the optical path of the object light RL, and at least a part of the optical paths of the processing lights EL#1 to EL#4 may not overlap with each other.

[0090] In order to optically separate at least a part of the optical path of the measurement light ML, at least a part of the optical path of the object light RL, and at least a part of the optical paths of the processing lights EL#1 to EL#4, as shown in FIG. 21, within a virtual optical surface OP (typically a surface along the XY plane, for example, the pupil plane (entrance pupil plane) of the condenser optical system 3111) in the condenser optical system 3111 that intersects the optical axis AX of the condenser optical system 3111, the measurement light ML, the object light RL, and the processing lights EL#1 to EL#4 may each pass through separate regions that are separated from each other in different directions from the optical axis AX. Within the optical surface OP, the region through which the measurement light ML passes, the region through which the object light RL passes, and the regions through which the processing lights EL#1 to EL#4 pass may not overlap. In this case, within the optical surface OP, the distance between the optical axis AX and the optical path of the measurement light ML, the distance between the optical axis AX and the optical path of the object light RL, the distance between the optical axis AX and the optical path of the processing light EL#1, the distance between the optical axis AX and the optical path of the processing light EL#2, the distance between the optical axis AX and the optical path of the processing light EL#3, and the distance between the optical axis AX and the optical path of the processing light EL#4 may be the same as each other. Alternatively, the distances between the optical axis AX and at least two of the optical paths of the measurement light ML, the object light RL, and the processing lights EL#1 to EL#4 may be different from each other. In the example shown in FIG. 21, within the optical surface OP, the distances between the optical axis AX and the optical paths of the measurement light ML, the object light RL, and the processing lights EL#1 to EL#4 are the same as each other. In this case, the measurement light ML, the object light RL, and the processing lights EL#1 to EL#4 may pass through regions that are line-symmetric with respect to the J axis that intersects the optical axis AX within the optical surface OP. For example, as shown in FIG. 21, the measurement light ML, the object light RL, and the processing lights EL#1 to EL#4 may pass through six regions having rotational angles of 315 degrees, 135 degrees, 270 degrees, 90 degrees, 0 degrees, and 180 degrees (or θ+α (α is an arbitrary angle different from 90 degrees, 180 degrees, and 270 degrees) degrees, θ+α−180 degrees, θ+270 degrees, θ+90 degrees, θ degrees, and θ+180 degrees) in the clockwise direction around the origin within the coordinate plane along the XY plane with the optical axis AX as the origin. In other words, the measurement light ML, the object light RL, and the processing lights EL#1 to EL#4 may pass through regions that are rotationally symmetric about the optical axis AX twice within the optical surface OP.

[0091] When the measurement light ML, the object light RL, and the processing lights EL#1 to EL#4 pass through separate regions that are separated from each other in different directions from the optical axis AX within the optical surface OP, the condenser optical system 3111 may irradiate the workpiece W with the measurement light ML and the processing lights EL#1 to EL#4 from different directions. Specifically, the condenser optical system 3111 may irradiate the workpiece W with the measurement light ML and the processing lights EL#1 to EL#4 from different positions in the rotational direction centered on the optical axis AX. Further, the object light RL may enter the condenser optical system 3111 after traveling along an optical path different from the optical path through which the processing lights EL#1 to EL#4 pass between the condenser optical system 3111 and the workpiece W.

[0092] Alternatively, in order to optically separate at least a part of the optical path of the measurement light ML, at least a part of the optical path of the object light RL, and at least a part of the optical paths of the processing lights EL#1 to EL#4, within the optical surface OP, the measurement light ML, the object light RL, and the processing lights EL#1 to EL#4 may pass through separate regions that are separated from each other by different distances in the same direction from the optical axis AX. In this case, the condenser optical system 3111 may irradiate the workpiece W with the measurement light ML and the processing lights EL#1 to EL#4 such that the angle formed between the traveling direction of the measurement light ML and the optical axis AX is different from the angle formed between the traveling directions of the processing lights EL#1 to EL#4 and the optical axis AX between the condenser optical system 3111 and the workpiece W. Further, the object light RL may enter the condenser optical system 3111 after traveling along an optical path in which the angle formed between the traveling direction of the return light RL and the optical axis AX is different from the angle formed between the traveling directions of the processing lights EL#1 to EL#4 and the optical axis AX between the condenser optical system 3111 and the workpiece W.

[0093] The object light RL incident on the light condensing optical system 3111 is detected (or in other words, received) by the measuring device 82b via the light condensing optical system 3111 (that is, via at least a part of the irradiation optical system 311). Therefore, the measuring device 82b may be referred to as a detection device or a light receiving device. Also, the measuring device 82b may be referred to as an information acquisition device that acquires information regarding the object light RL. The measuring device 82b can measure (or in other words, observe or monitor) the work W by detecting the object light RL. As an example, the measuring device 82b may include an imaging device (camera) that images the work W by detecting the object light RL. In this case, the measuring device 82b may measure the work W by imaging at least a part of the work W illuminated by the measurement light ML that can be used as illumination light.

[0094] The detection result of the object light RL by the measuring device 82b (that is, the measurement result of the work W) may be output to the control device 6. The control device 6 may control the processing system SYSb to process the work W based on the detection result of the object light RL by the measuring device 82b (that is, the measurement result of the work W).

[0095] The processing system SYSb of the second embodiment described above can enjoy the same effects as those that the processing system SYSa of the first embodiment described above can enjoy. Further, the processing system SYSb can process the workpiece W based on the measurement result of the workpiece W by the measuring device 82b. For this reason, the processing system SYSb can appropriately process the workpiece W as compared with a processing system of a comparative example that does not include the measuring device 82b. For example, when the measurement light ML is irradiated onto the workpiece W before the additional processing operation is started, the processing system SYSb can identify the state of the workpiece W before being processed based on the measurement result of the workpiece W by the measuring device 82b. As a result, the processing system SYSb can appropriately set the processing conditions so that an appropriate additional processing operation is performed based on the state of the workpiece W before being processed. For example, when the measurement light ML is irradiated onto the workpiece W during the period in which the additional processing operation is being performed, the processing system SYSb can identify the processing state of the workpiece W in real time based on the measurement result of the workpiece W by the measuring device 82b. As a result, the processing system SYSb can appropriately set the processing conditions so that an appropriate additional processing operation is performed based on the processing state of the workpiece W identified in real time. For example, when the measurement light ML is irradiated onto the workpiece W after the additional processing operation is completed, the processing system SYSb can identify the state of the processed workpiece W based on the measurement result of the workpiece W by the measuring device 82b. As a result, the processing system SYSb can determine whether an appropriate additional processing operation has been performed based on the state of the processed workpiece W. Further, when it is determined that an appropriate additional processing operation has not been performed, the processing system SYSb can process the workpiece W again.

[0096] (3) Machining system SYS of the third embodiment Subsequently, with reference to FIG. 22, a processing system SYS of a third embodiment (hereinafter, the processing system SYS of the third embodiment is referred to as "processing system SYSc") will be described. FIG. 22 is a system configuration diagram showing the system configuration of the processing system SYSc of the third embodiment.

[0097] As shown in FIG. 22, the processing system SYSb of the third embodiment is different in that it includes a processing device 3c instead of the processing device 3 as compared with the processing system SYSb of the second embodiment described above. Other features of the processing system SYSc may be the same as those of the processing system SYSb. The processing device 3c is different in that it includes a processing head 31c instead of the processing head 31 as compared with the processing device 3. Other features of the processing device 3c may be the same as those of the processing device 3. The processing head 31c is different in that it includes an irradiation optical system 311c instead of the irradiation optical system 311 as compared with the processing head 31. Other features of the processing head 31c may be the same as those of the processing head 31. Therefore, hereinafter, the irradiation optical system 311c will be described with reference to FIG. 23. FIG. 23 is a cross-sectional view showing the structure of the irradiation optical system 311c of the third embodiment.

[0098] As shown in FIG. 23, the irradiation optical system 311c is different in that it includes movable mirrors 3115c and 3116c, and movable mirror driving devices 3117c and 3118c as compared with the irradiation optical system 311. Other features of the irradiation optical system 311c may be the same as those of the irradiation optical system 311.

[0099] The movable mirror 3115c is disposed on the optical path of the measurement light ML emitted from the measurement light source 81b. In the example shown in FIG. 23, the movable mirror 3115c is disposed on the optical path of the measurement light ML between the measurement light source 81b and the condensing optical system 3111. In this case, the movable mirror 3115c reflects the measurement light ML incident on the reflecting surface of the movable mirror 3115c, thereby guiding the measurement light ML to the condensing optical system 3111. The movable mirror 3116c is disposed on the optical path of the object light RL emitted from the workpiece W. In the example shown in FIG. 23, the movable mirror 3116c is disposed on the optical path of the object light RL between the condensing optical system 3111 and the measuring device 82b. In this case, the movable mirror 3116c reflects the object light RL incident on the reflecting surface of the movable mirror 3116c, thereby guiding it to the measuring device 82b.

[0100] The movable mirror 3115c can be driven by a movable mirror driving device 3117c so as to change the angle of the reflecting surface of the movable mirror 3115c with respect to the traveling direction of the measurement light ML incident on the movable mirror 3115c. The movable mirror 3116c can be driven by a movable mirror driving device 3118c so as to change the angle of the reflecting surface of the movable mirror 3116c with respect to the traveling direction of the object light RL incident on the movable mirror 3116c. The movable mirror driving devices 3117c and 3118c change the angles of the reflecting surfaces of the movable mirrors 3115c and 3116c under the control of the control device 6.

[0101]

[0102] In the third embodiment, for example, the movable mirror 3115c may change the irradiation position of the measurement light ML on the shaping surface MS by changing the angle of the reflecting surface of the movable mirror 3115c with respect to the traveling direction of the measurement light ML. Therefore, the movable mirror 3115c and the movable mirror driving device 3117c may function as a position changing device for changing the irradiation position of the measurement light ML on the shaping surface MS. Further, the movable mirror 3116c may guide the object light RL including the return light of the measurement light ML irradiated on the shaping surface MS to the measuring device 82b by changing the angle of the reflecting surface of the movable mirror 3116c with respect to the traveling direction of the object light RL in synchronization with the driving of the movable mirror 3115c. That is, the movable mirror 3116c and the movable mirror driving device 3118c may change the angle of the reflecting surface of the movable mirror 3116c with respect to the traveling direction of the object light RL so that the object light RL including the return light of the measurement light ML is detected by the measuring device 82b even when the irradiation position of the measurement light ML on the shaping surface MS is changed.For example, as shown in FIG. 24(a) which is a cross-sectional view showing a first example of the optical path of the measurement light ML irradiated onto the shaping surface MS, the movable mirror 3115c may change the angle of the reflecting surface of the movable mirror 3115c with respect to the traveling direction of the measurement light ML so that the measurement light ML is irradiated onto the position on the shaping surface MS where the processing light EL is currently irradiated. Further, in this case, the movable mirror 3116c may change the angle of the reflecting surface of the movable mirror 3116c with respect to the traveling direction of the object light RL so that the object light RL including the light from the position on the shaping surface MS where the processing light EL is currently irradiated enters the measuring device 82b. As a result, the processing system SYSc can specify the processing state of the workpiece W in real time based on the measurement result of the workpiece W by the measuring device 82b. For this reason, the processing system SYSc can appropriately set the processing conditions so that an appropriate additional processing operation is performed based on the processing state of the workpiece W specified in real time.

[0103] For example, as shown in FIG. 24(b) which is a cross-sectional view showing a second example of the optical path of the measurement light ML irradiated onto the shaping surface MS, the movable mirror 3115c may change the angle of the reflecting surface of the movable mirror 3115c with respect to the traveling direction of the measurement light ML so that the measurement light ML is irradiated onto the position on the shaping surface MS where the processing light EL has already been irradiated. Note that the position where the processing light EL has already been irradiated is located on the rear side in the moving direction of the processing light EL (that is, the moving direction of the target irradiation region EA) in the direction along the shaping surface MS with respect to the position where the processing light EL is currently irradiated. Further, in this case, the movable mirror 3116c may change the angle of the reflecting surface of the movable mirror 3116c with respect to the traveling direction of the object light RL so that the object light RL including the light from the position on the shaping surface MS where the processing light EL has already been irradiated enters the measuring device 82b. As a result, the processing system SYSc can specify the state of the processed workpiece W based on the measurement result of the workpiece W by the measuring device 82b. For this reason, the processing system SYSc can determine whether an appropriate additional processing operation has been performed based on the state of the processed workpiece W.

[0104] As shown in FIG. 24(c), which is a cross-sectional view showing a third example of the optical path of the measurement light ML irradiated onto the shaping surface MS, the movable mirror 3115c may change the angle of the reflecting surface of the movable mirror 3115c with respect to the traveling direction of the measurement light ML so that the measurement light ML is irradiated onto a position on the shaping surface MS where the processing light EL has not yet been irradiated (specifically, a position where the processing light EL is scheduled to be irradiated in the future). Note that the position where the processing light EL is scheduled to be irradiated in the future is located on the front side in the moving direction of the processing light EL (i.e., the moving direction of the target irradiation region EA) in the direction along the shaping surface MS, compared to the position where the processing light EL is currently irradiated. Also, in this case, the movable mirror 3116c may change the angle of the reflecting surface of the movable mirror 3116c with respect to the traveling direction of the object light RL so that the object light RL including the light from the position on the shaping surface MS where the processing light EL is scheduled to be irradiated in the future enters the measuring device 82b. As a result, the processing system SYSc can specify the state of the workpiece W before being processed based on the measurement result of the workpiece W by the measuring device 82b. For this reason, the processing system SYSc can appropriately set the processing conditions so that an appropriate additional processing operation is performed based on the state of the workpiece W before being processed.

[0105] In this way, the processing system SYSc of the third embodiment can enjoy the same effects as those that the processing system SYSb of the second embodiment described above can enjoy.

[0106] Note that, as already described in the first embodiment, by changing the angles of the emission ends of the optical transmission members 21#1 to 21#4 in the first embodiment and changing the traveling directions of the processing lights EL#1 to EL#4 emitted from the optical transmission members 21#1 to 21#4, the same effects as those of the processing system SYSc of the third embodiment can also be enjoyed.

[0107] (4) Machining system SYS of the fourth embodiment Next, referring to FIG. 25, a processing system SYS of the fourth embodiment (hereinafter, the processing system SYS of the fourth embodiment is referred to as "processing system SYSd") will be described. FIG. 25 is a system configuration diagram showing the system configuration of the processing system SYSd of the fourth embodiment.

[0108] As shown in FIG. 25, the processing system SYSd of the fourth embodiment is different in that it includes a measuring device 83d as compared with the processing system SYSb of the second embodiment described above. Other features of the processing system SYSd may be the same as those of the processing system SYSb.

[0109] The measuring device 83d is a device capable of measuring the workpiece W, similar to the measuring device 82b. However, the measuring device 83d may be a device capable of measuring the workpiece W by a measuring method based on a different principle from that of the measuring device 82b. For example, when the measuring device 82b measures the workpiece W by imaging the workpiece W as described above, the measuring device 83d may be a device capable of measuring the workpiece W without imaging the workpiece W.

[0110] The measuring device 83d is a device capable of optically measuring the workpiece W via a condensing optical system 3111 (that is, via the irradiation optical system 311). In this case, the measuring device 83d may include a light transmitting unit 831d and a light receiving unit 832d.

[0111] The light transmitting unit 831d can transmit measurement light ML’ from a light source (not shown) to the workpiece W via a condensing optical system 3111. That is, the light transmitting unit 831d can irradiate the workpiece W with the measurement light ML’ from a light source (not shown) via the condensing optical system 3111. For this reason, the light transmitting unit 831d may be referred to as an irradiation device. Note that the light transmitting unit 831d may include the light source of the measurement light ML’. The measurement light ML’ includes, for example, at least one of infrared light, visible light, and ultraviolet light. However, the measurement light ML’ may include other types of radiation (for example, at least one of terahertz waves, microwaves, and X-rays). The wavelength of the measurement light ML’ may be different from the wavelength of at least one of the processing light EL and the measurement light ML. The wavelength range of the measurement light ML’ may be different from the wavelength range of at least one of the processing light EL and the measurement light ML. However, the wavelength of the measurement light ML’ may be the same as the wavelength of at least one of the processing light EL and the measurement light ML. At least a part of the wavelength range of the measurement light ML’ may overlap (that is, may be duplicated) with at least a part of the wavelength range of at least one of the processing light EL and the measurement light ML).

[0112] The irradiation optical system 311 may irradiate the measurement light ML’ onto an area on the workpiece W where at least one of the measurement light ML and the processing lights EL#1 to EL#4 is irradiated. The irradiation optical system 311 may irradiate the measurement light ML’ onto an area including at least a part of the target irradiation area EA set on the workpiece W. The irradiation optical system 311 may irradiate the measurement light ML’ onto an area including at least a part of the molten pool MP formed on the workpiece W. However, the irradiation optical system 311 may irradiate the measurement light ML’ onto an area different from the area on the workpiece W where at least one of the measurement light ML and the processing lights EL#1 to EL#4 is irradiated. The irradiation optical system 311 may irradiate the measurement light ML’ onto an area different from the target irradiation area EA set on the workpiece W. The irradiation optical system 311 may irradiate the measurement light ML’ onto an area different from the molten pool MP formed on the workpiece W.

[0113] When the measurement light ML’ irradiates the workpiece W, return light RL’ generated by the irradiation of the measurement light ML’ on the workpiece W is emitted from the workpiece W. The return light RL’ may include at least one of the reflected light, scattered light, and transmitted light of the measurement light ML’ by the workpiece W. The return light RL’ (i.e., object light corresponding to the measurement light ML’ passing through the workpiece W) emitted from the workpiece W enters the light receiving unit 832d through the irradiation optical system 311 (i.e., through the condensing optical system 3111).

[0114] Here, with reference to FIGS. 26 and 27, the optical paths of the measurement light ML’ and the return light RL’ in the irradiation optical system 311 (particularly, in the condensing optical system 3111) will be described. FIG. 26 is a cross-sectional view showing the optical paths of the measurement light ML’ and the return light RL’ in the irradiation optical system 311 (particularly, in the condensing optical system 3111). FIG. 27 is a cross-sectional view taken along the line XXVI-XXVI’ of FIG. 26.

[0115] As shown in FIGS. 26 and 27, in the condensing optical system 3111, at least a part of the optical path of the measurement light ML’ and at least a part of the optical paths of the measurement light ML, the object light RL, and the processing lights EL#1 to EL#4 may be optically separated (i.e., may be different from each other). For this reason, as shown in FIG. 27, within a virtual optical surface OP (typically a surface along the XY plane, for example, the entrance pupil surface of the condensing optical system 3111) in the condensing optical system 3111 that intersects the optical axis AX of the condensing optical system 3111, the measurement light ML’, the measurement light ML, the object light RL, and the processing lights EL#1 to EL#4 may pass through separate regions that are separated from each other in different directions from the optical axis AX. Alternatively, within the optical surface OP, the measurement light ML’, the measurement light ML, the object light RL, and the processing lights EL#1 to EL#4 may pass through separate regions that are separated from each other by different distances in the same direction from the optical axis AX (see FIGS. 6 to 7).

[0116] Also, within the condenser optical system 3111, at least a part of the optical path of the return light RL' and at least a part of the optical paths of the measurement light ML, the object light RL, and the processing lights EL#1 to EL#4 may be optically separated (i.e., they may be different from each other). Therefore, as shown in FIG. 27, within the optical surface OP, the return light RL', the measurement light ML, the object light RL, and the processing lights EL#1 to EL#4 may each pass through separate regions that are separated from each other in different directions from the optical axis AX. Alternatively, within the optical surface OP, the return light RL', the measurement light ML, the object light RL, and the processing lights EL#1 to EL#4 may each pass through separate regions that are separated from each other by different distances in the same direction from the optical axis AX (see FIGS. 6 to 7).

[0117] On the other hand, within the condenser optical system 3111, the optical path of the measurement light ML' and the optical path of the return light RL' may not be optically separated. That is, within the condenser optical system 3111, the optical path of the measurement light ML' traveling from the light transmitting unit 831d toward the workpiece W and the optical path of the return light RL' traveling from the workpiece W toward the light receiving unit 832d may overlap. Therefore, as shown in FIG. 27, within the optical surface OP, the measurement light ML' and the return light RL' may pass through the same region. However, within the condenser optical system 3111, at least a part of the optical path of the measurement light ML' and at least a part of the optical path of the return light RL' may be optically separated.

[0118] The return light RL' incident on the condenser optical system 3111 is received (i.e., detected) by the light receiving unit 832d via the condenser optical system 3111 (i.e., via the irradiation optical system 311). Therefore, the light receiving unit 832d may be referred to as a detection device or a light receiving device. The light receiving device 832d can measure (i.e., observe or monitor) the workpiece W by receiving the return light RL'.

[0119] As an example of the measuring device 83d including such a light transmitting unit 831d and a light receiving unit 832d, a laser distance meter can be cited. As the laser distance meter, for example, one using a time-of-flight measurement method can be used. In this case, the control device 6 can calculate the distance from the measuring device 83d to the workpiece W (particularly, the distance from the measuring device 83d to the position on the workpiece W irradiated with the measurement light ML') based on the detection result of the return light RL' by the measuring device 83d. If the measuring device 83d irradiates the measurement light ML' at a plurality of positions on the workpiece W, the control device 6 can calculate the distances from the measuring device 83d to the plurality of positions on the workpiece W based on the detection result of the return light RL' by the measuring device 83d. As a result, the control device 6 can calculate at least one of the position and shape of the workpiece W based on the distances from the measuring device 83d to the plurality of positions on the workpiece W. In this case, the control device 6 may control the processing system SYSd to process the workpiece W based on at least one of the position and shape of the workpiece W. Note that an interferometric measurement method laser distance meter may be used.

[0120] The processing system SYSd of the fourth embodiment described above can enjoy the same effects as those that the processing system SYSb of the second embodiment described above can enjoy. Further, the processing system SYSd can process the workpiece W based on the measurement result of the workpiece W by the measuring device 83d in addition to the measurement result of the workpiece W by the measuring device 83d. For this reason, the processing system SYSd can appropriately process the workpiece W.

[0121] Note that at least one of the processing system SYSa of the first embodiment and the processing system SYSc of the third embodiment described above may include the constituent requirements peculiar to the fourth embodiment. The constituent requirements peculiar to the fourth embodiment are the constituent requirements related to the measuring device 83d.

[0122] (5) Machining system SYS of the fifth embodiment Next, with reference to FIG. 28, the processing system SYS of the fifth embodiment (hereinafter, the processing system SYS of the fifth embodiment is referred to as "processing system SYSe") will be described. FIG. 28 is a system configuration diagram showing the system configuration of the processing system SYSe of the fifth embodiment.

[0123] As shown in FIG. 28, the processing system SYSe of the fifth embodiment is different in that it includes a recovery device 91e and a gas supply device 92e as compared with the processing system SYSa of the first embodiment described above. Other features of the processing system SYSe may be the same as those of the processing system SYSa. Hereinafter, with reference to FIG. 29, the operations of the recovery device 91e and the gas supply device 92e will be described. FIG. 29 is a plan view schematically showing the operations of the recovery device 91e and the gas supply device 92e.

[0124] The recovery device 91e recovers unnecessary substances generated by the irradiation of the processing light EL from the chamber space 73IN. Specifically, the recovery device 91e recovers unnecessary substances through a recovery port 911e disposed in the chamber space 73IN. The recovery port 911e is directed toward the shaping surface MS irradiated with the processing light EL. In particular, unnecessary substances are likely to be generated from the position irradiated with the processing light EL (that is, the position where the melting pool MP is formed). For this reason, the recovery port 911e may be directed toward the position where the melting pool MP is formed.

[0125] When the processing light EL is blocked by the recovery port 911e, it may affect the processing of the workpiece W using the processing light EL. For this reason, the recovery port 911e may be disposed at a position away from the optical path of the processing light EL in a direction intersecting the traveling direction of the processing light EL (that is, a direction intersecting the optical axis AX of the condensing optical system 3111, typically, a direction along the XY plane). That is, the recovery port 911e may be disposed at a position away from the melting pool MP irradiated with the processing light EL in a direction intersecting the traveling direction of the processing light EL.

[0126] The recovery device 91e sucks the gas in the chamber space 73IN through the recovery port 911e (that is, exhausts the chamber space 73IN), thereby recovering the unwanted substances together with the gas in the chamber space 73IN. For this reason, typically, a gas flow is formed from the melting pool MP towards the recovery port 911e. The unwanted substances ride on this gas flow and move from the melting pool MP, which is the main source of the unwanted substances, towards the recovery port 911e. As a result, the unwanted substances are recovered through the recovery port 911e. Here, if the gas flow from the melting pool MP towards the recovery port 911e (that is, the recovery path of the unwanted substances) exists on the optical path of the processing light EL, the irradiation of the processing light EL to the workpiece W may be hindered by the unwanted substances. For this reason, the recovery port 911e may recover the unwanted substances so that the gas flow from the melting pool MP towards the recovery port 911e (that is, the recovery path of the unwanted substances) does not exist on the optical path of the processing light EL. For example, as shown in FIG. 29, the recovery port 911e is located at a position that satisfies the condition that when the processing light EL is irradiated in a direction away from both the straight line connecting the melting pool MP and the recovery port 911e (that is, the straight line along the gas flow formed by the recovery port 911e, which is a straight line extending along the recovery path of the unwanted substances) and the optical path of the processing light EL (that is, the optical axis AX of the condensing optical system 3111). Conversely, the condensing optical system 3111 may irradiate the shaping surface MS with the processing light EL so that the gas flow from the melting pool MP towards the recovery port 911e does not exist on the optical path of the processing light EL. For example, as shown in FIG. 29, the condensing optical system 3111 may irradiate the processing light EL at a position that is away from both the straight line connecting the melting pool MP and the recovery port 911e and the optical path of the processing light EL in a direction intersecting both of them.

[0127] The gas supply device 92e forms a gas flow for removing unwanted substances generated by the irradiation of the processing light EL from the shaping surface MS or the space facing the shaping surface MS by supplying gas to the chamber space 73IN. Specifically, the gas supply device 92e supplies gas to the chamber space 73IN through a gas supply port 921e disposed in the chamber space 73IN. The gas supply port 921e is directed toward the shaping surface MS irradiated with the processing light EL. In particular, the gas supply port 921e may be directed toward the position where the molten pool MP, which is the main source of unwanted substances, is formed.

[0128] If the processing light EL is blocked by the gas supply port 921e, it may affect the processing of the workpiece W using the processing light EL. For this reason, the gas supply port 921e may be disposed at a position away from the optical path of the processing light EL in a direction intersecting the traveling direction of the processing light EL (that is, a direction intersecting the optical axis AX of the condensing optical system 3111, typically a direction along the XY plane). That is, the gas supply port 921e may be disposed at a position away from the molten pool MP irradiated with the processing light EL in a direction intersecting the traveling direction of the processing light EL.

[0129] The gas supply device 92e forms a gas flow from the gas supply port 921e by supplying gas to the chamber space 73IN through the gas supply port 921e. The unwanted substances are removed from the shaping surface MS or the space facing the shaping surface MS along with this gas flow. Here, if the gas flow from the gas supply port 921e (i.e., the removal path of the unwanted substances) exists on the optical path of the processing light EL, the irradiation of the processing light EL onto the workpiece W may be obstructed by the unwanted substances. For this reason, the gas supply port 921e may supply gas so that the gas flow from the gas supply port 921e (i.e., the removal path of the unwanted substances) does not exist on the optical path of the processing light EL. For example, as shown in FIG. 29, the gas supply port 921e is arranged at a position satisfying the condition that when the processing light EL is irradiated in a direction away from a straight line including the line LN2 connecting the melting pool MP and the gas supply port 921e (i.e., a straight line along the gas flow formed by the gas supply port 921e and along the removal path of the unwanted substances) and intersecting both the straight line and the optical path of the processing light EL (i.e., the optical axis AX of the condensing optical system 3111). Conversely, the condensing optical system 3111 may irradiate the shaping surface MS with the processing light EL so that the gas flow from the gas supply port 921e (i.e., the removal path of the unwanted substances) does not exist on the optical path of the processing light EL. For example, as shown in FIG. 29, the condensing optical system 3111 may irradiate the processing light EL at a position away from a straight line including the line LN2 connecting the melting pool MP and the gas supply port 921e in a direction intersecting both the straight line and the optical path of the processing light EL.

[0130] The unwanted substances removed by the gas supplied by the gas supply device 92e may be recovered by the recovery device 91e. At this time, in order to improve the removal efficiency of the unwanted substances by the gas supply device 92e and the recovery efficiency of the unwanted substances by the recovery device 91e, the gas supply port 921e and the recovery port 911e may be arranged such that the melting pool MP, which is the main source of the unwanted substances, is located between the gas supply port 921e and the recovery port 911e. In this case, since a gas flow is formed from the gas supply port 921 through the source of the unwanted substances toward the recovery port 911e, the unwanted substances are efficiently removed and recovered.

[0131] The processing system SYSe of the fifth embodiment described above can enjoy the same effects as those that the processing system SYSa of the first embodiment described above can enjoy. Furthermore, the processing system SYSe can appropriately remove and / or recover the unwanted substances generated by the irradiation of the processing light EL. Therefore, the processing system SYSe can reduce the influence caused by the irradiation of the processing light EL on the workpiece W being hindered by the unwanted substances. Therefore, the processing system SYSe can appropriately process the workpiece W.

[0132] In addition, in the above description, the processing system SYSe includes both the recovery device 91e and the gas supply device 92e. However, the processing system SYSe may include the recovery device 91e while not including the gas supply device 92e. The processing system SYSe may include the gas device 92e while not including the recovery device 91e.

[0133] Also, in the above description, the processing system SYSe removes the unwanted substances using the gas supplied from the gas supply device 92e. However, the processing system SYSe may remove the unwanted substances using the gas supplied from the gas supply source 5 (that is, the purge gas). That is, the processing system SYSe may remove the unwanted substances by supplying the purge gas to the chamber space 73IN through the gas supply port 921e. In this case, the processing system SYSe may not include the gas supply device 92e.

[0134] Also, at least one of the processing systems SYSb to SYSd of the second to fourth embodiments described above may include the constituent elements specific to the fifth embodiment. The constituent elements specific to the fifth embodiment are the constituent elements related to at least one of the recovery device 91e and the gas supply device 92e.

[0135] (6) Machining system SYS of the sixth embodiment Next, with reference to FIG. 30, the processing system SYS of the sixth embodiment (hereinafter, the processing system SYS of the sixth embodiment is referred to as "processing system SYSf") will be described. FIG. 30 is a system configuration diagram showing the system configuration of the processing system SYSf of the sixth embodiment.

[0136] As shown in FIG. 30, the processing system SYSf of the sixth embodiment is different in that, compared with the processing system SYSa of the first embodiment described above, it includes a processing device 3f instead of the processing device 3. Further, the processing system SYSf is different in that it includes a gas supply device 93f compared with the processing system SYSa. Other features of the processing system SYSf may be the same as other features of the processing system SYSa. The processing device 3f is different in that it includes a processing head 31f instead of the processing head 31 compared with the processing device 3. Other features of the processing device 3f may be the same as other features of the processing device 3. The processing head 31f is different in that it includes a surrounding member 313f compared with the processing head 31. Other features of the processing head 31f may be the same as other features of the processing head 31. Therefore, hereinafter, with reference to FIG. 31, the surrounding member 313f will be further described. FIG. 31 is a cross-sectional view showing the structure of the surrounding member 313f of the sixth embodiment.

[0137] As shown in FIG. 31, the surrounding member 313f is attached to the tip of the irradiation optical system 311 (specifically, the tip on the -Z side facing the workpiece W). That is, the surrounding member 313f is attached to the tip of the condensing optical system 3111.

[0138] The surrounding member 313f surrounds at least a part of the material nozzle 312. That is, the surrounding member 313f surrounds at least a part of the supply path of the modeling material M of the material nozzle 312. Specifically, the surrounding member 313f surrounds at least a part of the portion of the material nozzle 312 that protrudes downward from the irradiation optical system 311. For this reason, a through hole 3131f into which a part of the material nozzle 312 is inserted is formed in the surrounding member 313f. Further, a through hole 3132f that defines a space through which the processing light EL emitted from the condensing optical system 3111 can pass is formed in the surrounding member 313f. For this reason, the surrounding member 313f may include an inner wall member 3133f that surrounds the material nozzle 312 so as to define the through hole 3131f, and an outer wall member 3134f that defines the through hole 3132f together with the inner wall member 3133f (that is, surrounds the inner wall member 3133f so as to define the through hole 3132f). That is, the surrounding member 313f may have a structure such as a double pipe in which a pipe in which the material nozzle 312 is arranged and a pipe through which the processing light EL can pass are formed. In this case, the condensing optical system 3111f irradiates the workpiece W with the processing light EL through the space between the outer wall member 3134f and the inner wall member 3133f (that is, the space between the outer wall member 3134f and the material nozzle 312). Incidentally, each of the inner wall member 3133f and the outer wall member 3134f may be referred to as a partition member.

[0139] The through-hole 3132f is connected to the opening 3113 (particularly, the opening 3113 of the terminal optical member 3114 of the condensing optical system 3111). Here, as described above, the purge gas supplied from the gas supply source 5 to the chamber space 73IN is supplied to the space on the light emitting surface side of the terminal optical member 3114 (typically, the work W) through the opening 3113. Therefore, when the through-hole 3132f is connected to the opening 3113, the purge gas supplied from the gas supply source 5 to the chamber space 73IN is supplied to the space below the surrounding member 313f (that is, the space between the surrounding member 313f and the work W) through the opening 3113 and the through-hole 3132f. Specifically, the purge gas is supplied to the through-hole 3132f corresponding to the space between the surrounding member 313f and the material nozzle 312 (specifically, the space between the outer wall member 3134f and the material nozzle 312) through the opening 3113 of the terminal optical member 3114. The purge gas supplied to the through-hole 3132f is supplied to the space below the surrounding member 313f from the discharge port 3135df corresponding to the lower end of the through-hole 3132f. That is, the purge gas supplied to the through-hole 3132f is supplied to the work W located below the surrounding member 313f from the discharge port 3135f. In this case, the surrounding member 3131f may function as a gas guiding member that guides the purge gas from the opening 3113 of the terminal optical member 3114 to the work W.

[0140] Also in this case, as described in the first embodiment, due to the flow of the gas supplied through the through-hole 3132f, the modeling material M from the supply outlet 314 is more likely to be supplied along the supply path downward from the material nozzle 312. That is, the possibility that the modeling material M from the supply outlet 314 scatters in all directions from the material nozzle 312 is reduced. As a result, the material nozzle 312 can appropriately supply the modeling material M. Such an effect becomes remarkable when the discharge port 3135f is formed in the vicinity of the supply outlet 314.

[0141] Furthermore, a purge gas flow is formed within the through-hole 3132f through which the processing light EL passes, flowing from the inside of the through-hole 3132f toward the outside of the through-hole 3132f. For this reason, the possibility of unnecessary substances generated by the irradiation of the processing light EL onto the workpiece W entering the inside of the through-hole 3132f is reduced. Therefore, the influence caused by the irradiation of the processing light EL onto the workpiece W being obstructed by unnecessary substances is reduced.

[0142] The processing system SYSf of the sixth embodiment described above can enjoy the same effects as those that the processing system SYSa of the first embodiment described above can enjoy. Furthermore, as described above, the processing system SYSf can appropriately supply the modeling material M along the supply path directed downward from the material nozzle 312 by using the purge gas supplied through the surrounding member 313f. That is, the processing system SYSf can improve the directivity in the supply direction of the modeling material M. Furthermore, as described above, the processing system SYSf can reduce the influence caused by the irradiation of the processing light EL onto the workpiece W being obstructed by unnecessary substances by using the purge gas supplied through the surrounding member 313f.

[0143] Note that at least one of the processing systems SYSb to SYSe of the second to fifth embodiments described above may include the constituent elements peculiar to the sixth embodiment. The constituent elements peculiar to the sixth embodiment are the constituent elements related to the surrounding member 313f.

[0144] (7) Machining system SYS of the seventh embodiment Next, the processing system SYS of the seventh embodiment (hereinafter, the processing system SYS of the seventh embodiment will be referred to as "processing system SYSg") will be described. The processing system SYSg of the seventh embodiment is different from the processing system SYSa of the first embodiment described above in that removal processing may be performed by irradiating the workpiece W with the processing light EL to remove a part of the workpiece W. For example, the processing system SYSg may perform removal processing so that the shape of the workpiece W becomes a desired shape. For example, the processing system SYSg may perform removal processing so as to form a desired structure on the workpiece W. For example, the processing system SYSg may perform removal processing so as to form a desired structure on the surface of the workpiece W. For example, the processing system SYSg may perform removal processing so that the surface of the workpiece W is smoothed.

[0145] When performing the removal processing, the processing system SYSg may form a riblet structure on the workpiece W. The riblet structure may be a structure capable of reducing the resistance of the fluid on the surface of the workpiece W (in particular, at least one of the frictional resistance and the turbulent frictional resistance). The riblet structure may include a structure capable of reducing the noise generated when the fluid and the surface of the workpiece W move relatively. The riblet structure may include, for example, a structure in which grooves extending along a first direction (for example, the Y-axis direction) along the surface of the workpiece W are arranged in a plurality along a second direction (for example, the X-axis direction) along the surface of the workpiece W and intersecting the first direction.

[0146] When performing removal processing, the processing system SYSg may form an arbitrary structure having an arbitrary shape on the surface of the workpiece W. As an example of an arbitrary structure, there is a structure that generates a vortex with respect to the flow of fluid on the surface of the workpiece W. As another example of an arbitrary structure, there is a structure for imparting hydrophobicity to the surface of the workpiece W. As another example of an arbitrary structure, there is a fine texture structure (typically an uneven structure) on the order of micro to nanometers formed regularly or irregularly. Such a fine texture structure may include at least one of a sharkskin structure and a dimple structure having a function of reducing resistance by a fluid (gas and / or liquid). The fine texture structure may include a lotus leaf surface structure having at least one of a liquid repellent function and a self-cleaning function (for example, having a lotus effect). The fine texture structure may include at least one of a fine protrusion structure having a liquid transport function (see U.S. Patent Publication No. 2017 / 0044002), an uneven structure having a lyophilic function, an uneven structure having an antifouling function, a moth-eye structure having at least one of a reflectance reduction function and a liquid repellent function, an uneven structure that exhibits a structural color by enhancing only light of a specific wavelength by interference, a pillar array structure having an adhesion function using van der Waals force, an uneven structure having an aerodynamic noise reduction function, and a honeycomb structure having a droplet collection function, etc.

[0147] Such a processing system SYSb is shown in FIGS. 32 and 33. FIG. 32 is a block diagram showing the system configuration of the processing system SYSg. FIG. 33 is a cross-sectional view showing the structure of the processing system SYSg. As shown in FIGS. 32 and 33, the processing system SYSg is different in that it may not include the material supply source 1 and the mixing device 12 as compared with the processing system SYSa. Further, the processing system SYSg is different in that it may not include the material nozzle 312 as compared with the processing system SYSa. Specifically, the processing system SYSg is different in that it includes a processing device 3g having a processing head 31g not provided with the material nozzle 312 instead of the processing device 3 having a processing head 31 provided with the material nozzle 312 as compared with the processing system SYSa. That is, the processing system SYSg is different in that it may not include the components for supplying the modeling material M as compared with the processing system SYSa. Other features of the processing system SYSg may be the same as those of the processing system SYSa.

[0148] Similar to the processing system SYSa, the processing system SYSg described above may also perform the light characteristic control operation at least in part during the period of performing the removal processing operation. As a result, the processing system SYSg can enjoy the same effects as those that the processing system SYSa can enjoy.

[0149] In addition, when performing the removal processing, the processing system SYSg may irradiate the workpiece W with the processing light EL including a plurality of pulsed lights. For example, the processing system SYSg may irradiate the workpiece W with the processing light EL including a plurality of pulsed lights having a light emission time of nanoseconds or less.

[0150] (8) Other modification examples In the above description, the processing system SYS irradiates the workpiece W with a plurality of processing lights EL respectively emitted from a plurality of processing light sources 2. That is, the processing system SYS includes a plurality of processing light sources 2. However, the processing system SYS may branch a single light emitted from a single processing light source 2 into a plurality of processing lights EL and irradiate the branched plurality of processing lights EL onto the workpiece W. That is, the processing system SYS may include a single processing light source 2. Here, the intensities of the branched plurality of processing lights EL may be independently changeable. Changing the intensity may include setting the intensity to zero. In this case, shutters may be provided in each of the optical paths of the branched plurality of processing lights EL. Further, in addition to or instead of providing the shutters, light quantity adjusting members that actively change the passing light quantity may be provided in each of the optical paths of the plurality of processing lights EL.

[0151] In the above description, the processing system SYS processes the workpiece W by irradiating the workpiece W with the processing light EL. However, the processing system SYS may process the workpiece W by irradiating the workpiece W with an arbitrary energy beam. In this case, the processing system SYS may include, in addition to or instead of the processing light source 2 and the irradiation optical system 311, a beam source capable of generating an arbitrary energy beam and a beam irradiation device capable of irradiating the workpiece W with the arbitrary energy beam. Examples of the arbitrary energy beam include at least one of a charged particle beam and an electromagnetic wave. Examples of the charged particle beam include at least one of an electron beam and an ion beam.

[0152] When the workpiece W is processed using an arbitrary energy beam, the control device 6 may control the characteristics of the energy beam by performing the above-described light characteristic control operation. The characteristics of the energy beam may include, for example, the energy amount of the energy beam. When a charged particle beam is used as the energy beam, the characteristics of the energy beam (that is, the characteristics of the charged particle beam) may include, for example, the current density distribution of the charged particle beam (for example, the current density distribution in a plane intersecting the traveling direction of the processing light EL (typically, the shaping surface MS)).

[0153] (9) Supplementary note Regarding the embodiments described above, the following additional remarks are disclosed. [Appendix 1] A processing system for processing an object, an irradiation optical system that irradiates the object with a plurality of energy beams, and a beam characteristic changing device that individually changes the characteristics of the plurality of energy beams according to the shape of the object A processing system comprising. [Appendix 2] A processing system for processing an object, an irradiation optical system that irradiates the object with a plurality of energy beams to form a molten pool on the object, and a beam characteristic changing device that individually changes the characteristics of the plurality of energy beams to change the temperature distribution of the molten pool A processing system comprising. [Appendix 3] Comprising a detection device for detecting light from the molten pool, wherein the beam characteristic changing device changes the distribution of the energy beams based on the detection result of the detection device The processing system according to Appendix 2. [Appendix 4] A processing system for processing an object, an irradiation optical system that irradiates the object with a plurality of energy beams, a moving device that moves at least one of the object and the irradiation position of the energy beam, and a beam characteristic changing device that individually changes the characteristics of the plurality of energy beams according to the moving direction by the moving device A processing system comprising. [Appendix 5] The characteristics of the energy beam include the intensity of the energy beam The processing system according to any one of claims 1 to 4. [Appendix 6] A processing system for processing an object, An irradiation optical system that irradiates a plurality of energy beams onto the object from different directions to form a molten pool on the object, A material supply device that supplies a material to the molten pool, A processing system comprising the above. [Appendix 7] The direction in which the material is supplied from the material supply device to the molten pool is different from the irradiation direction of the plurality of energy beams The processing system according to Appendix 6. [Appendix 8] The material supply device supplies the material from a material supply direction that intersects the surface of the object The processing system according to Appendix 6 or 7. [Appendix 9] A processing system for processing an object using an energy beam, An irradiation optical system that condenses the energy beam and irradiates the object, A material supply device that supplies a material toward the irradiation position of the energy beam on the object, A surrounding member that surrounds at least a part of the supply path of the material of the material supply device, A gas supply device that supplies a gas to a space between a plurality of optical members constituting the irradiation optical system Comprising the above, The irradiation optical system irradiates the energy beam through a space between the surrounding member and at least a part of the material supply device, The gas from the gas supply device is supplied to the space between the surrounding member and at least a part of the material supply device A processing system. [Appendix 10] The gas from the gas supply device is supplied through an opening formed in at least a part of the optical members constituting the irradiation optical system The processing system according to Appendix 9. [Appendix 11] At least a part of the material supply device is arranged along the optical axis of the irradiation optical system The processing system according to Appendix 9 or 10. [Appendix 12] A processing system for processing an object using an energy beam, an irradiation optical system that irradiates the object with the energy beam, a detection device that detects object light including light from the object via the irradiation optical system, and is provided with, at least a part of the path of the object light in the irradiation optical system is different from at least a part of the path of the energy beam in the irradiation optical system processing system. [Appendix 13] The object light is first object light, The detection device is a first detection device, The processing system according to Appendix 12 further includes a second detection device that detects second object light including light from the object via the irradiation optical system and different from the first object light. The processing system according to Appendix 12. [Appendix 14] At least a part of the path of the second object light in the irradiation optical system is different from each of at least a part of the path of the energy beam in the irradiation optical system and at least a part of the path of the first object light in the irradiation optical system. The processing system according to Appendix 13. [Appendix 15] The processing system according to any one of Appendices 12 to 14 further includes an irradiation device that irradiates the object with measurement light via the irradiation optical system. The processing system according to any one of Appendices 12 to 14. [Appendix 16] At least a part of the path of the measurement light in the irradiation optical system is different from at least a part of the path of the energy beam in the irradiation optical system. The processing system according to Appendix 15. [Appendix 17] The object light includes light from the object irradiated with the measurement light. The processing system according to Appendix 15 or 16. [Appendix 18] The object light includes at least one of reflected light, scattered light, and transmitted light of the measurement light from the object. The processing system according to any one of supplementary notes 15 to 17. [Supplementary note 19] Further comprising a position changing device for changing the irradiation position of the measurement light on the object The processing system according to any one of supplementary notes 15 to 18. [Supplementary note 20] The position changing device changes the irradiation position of the measurement light so that the measurement light is irradiated to at least one of a first position where the energy beam has already been irradiated on the object, a second position where the energy beam is currently irradiated on the object, and a third position where the energy beam is scheduled to be irradiated on the object in the future. The processing system according to supplementary note 19. [Supplementary note 21] Further comprising a light guiding optical system that guides the object light from the first position to the detection device at least in part during the period when the measurement light is irradiated to the first position, guides the object light from the second position to the detection device at least in part during the period when the measurement light is irradiated to the second position, and guides the object light from the third position to the detection device at least in part during the period when the measurement light is irradiated to the third position. The processing system according to supplementary note 20. [Supplementary note 22] The measurement light is a first measurement light, The irradiation device is a first irradiation device, Further comprising a second irradiation device that irradiates the object with a second measurement light different from the first measurement light through the irradiation optical system. The processing system according to any one of supplementary notes 15 to 21. [Supplementary note 23] At least a part of the path of the second measurement light in the irradiation optical system is different from at least a part of the path of the energy beam in the irradiation optical system and at least a part of the path of the first measurement light in the irradiation optical system, respectively. The processing system according to supplementary note 22. [Supplementary note 24] The object light is a first object light, The detection device is a first detection device, and further includes a second detection device that detects second object light that includes light from the object via the irradiation optical system and is different from the first object light. The first object light includes light from the object irradiated with the first measurement light. The second object light includes light from the object irradiated with the second measurement light. The processing system according to appended note 22 or 23. [Appended note 25] The first object light includes at least one of reflected light, scattered light, and transmitted light of the first measurement light from the object. The second object light includes at least one of reflected light, scattered light, and transmitted light of the second measurement light from the object. The processing system according to appended note 24. [Appended note 26] A processing system that processes an object using a plurality of energy beams, including a plurality of beam sources that respectively emit the plurality of energy beams, an irradiation optical system that irradiates the object with the plurality of energy beams from the plurality of beam sources, and a control device that individually changes characteristics of the plurality of energy beams by controlling each of the plurality of beam sources. The processing system includes. [Appended note 27] The control device controls each of the plurality of beam sources such that characteristics of a first energy beam among the plurality of energy beams are different from characteristics of a second energy beam different from the first energy beam among the plurality of energy beams. The processing system according to appended note 26. [Appended note 28] The processing system further includes a moving device that relatively moves irradiation positions of the plurality of energy beams with respect to the object, and the control device controls each of the plurality of beam sources based on movement information regarding movement of the irradiation positions of the plurality of energy beams. The processing system described in Supplementary Note 26 or 27. [Supplementary Note 29] The movement information includes information regarding the movement direction of the irradiation positions of the plurality of energy beams. The processing system described in Supplementary Note 28. [Supplementary Note 30] The characteristics of the energy beam include the intensity of the energy beam. The control device controls each of the plurality of beam sources such that the intensity of a first energy beam among the plurality of energy beams is smaller than the intensity of a second energy beam different from the first energy beam among the plurality of energy beams. The irradiation position of the first energy beam on the object is located on the rear side in the movement direction relative to the irradiation position of the second energy beam on the object. The processing system described in Supplementary Note 29. [Supplementary Note 31] The control device controls each of the plurality of beam sources such that the intensity of the second energy beam becomes zero. The processing system described in Supplementary Note 30. [Supplementary Note 32] The control device controls each of the plurality of beam sources such that a first energy beam among the plurality of energy beams becomes a pulsed beam and a second energy beam different from the first energy beam among the plurality of energy beams becomes a continuous beam. The irradiation position of the first energy beam on the object is located on the rear side in the movement direction relative to the irradiation position of the second energy beam on the object. The processing system according to any one of Supplementary Notes 29 to 31. [Supplementary Note 33] The control device controls each of the plurality of beam sources based on object information regarding the object. The processing system according to any one of Supplementary Notes 26 to 32. [Supplementary Note 34] The object information includes information regarding the shape of the object. The processing system described in Supplementary Note 33. [Supplementary Note 35] The irradiation optical system irradiates a third energy beam among the plurality of energy beams onto a first portion of the object. The control device controls each of the plurality of beam sources such that the intensity of a fourth energy beam, in which a second portion of the object exists on the path from the irradiation optical system to the first portion among the plurality of energy beams, becomes equal to or lower than a predetermined intensity. The processing system described in Supplementary Note 34. [Supplementary Note 36] The predetermined intensity is the intensity of the energy beam that cannot process the object or zero. The processing system described in Supplementary Note 35. [Supplementary Note 37] In a predetermined plane intersecting the optical axis of the irradiation optical system, at least two of the plurality of energy beams pass through regions symmetric with respect to the optical axis. The processing system according to any one of Supplementary Notes 26 to 36. [Supplementary Note 38] In a predetermined plane intersecting the optical axis of the irradiation optical system, at least two of the plurality of energy beams pass through regions asymmetric with respect to the optical axis. The processing system according to any one of Supplementary Notes 26 to 37. [Supplementary Note 39] The plurality of energy beams include a first energy beam, a second energy beam, a third energy beam, and a fourth energy beam. In a predetermined plane intersecting the optical axis of the irradiation optical system, the first energy beam and the second energy beam pass through positions sandwiching the optical axis in a first direction along the predetermined plane. In the predetermined plane, the third energy beam and the fourth energy beam pass through positions sandwiching the optical axis in a second direction along the predetermined plane and intersecting the first direction. The processing system according to any one of Supplementary Notes 26 to 38. [Supplementary Note 40] In a predetermined plane intersecting the optical axis of the irradiation optical system, the plurality of energy beams form an annular beam shape. The processing system according to any one of Appendices 26 to 39. [Appendix 41] The processing system forms a molten pool on the object by irradiating the object with the plurality of energy beams. The processing system further includes a gas supply device that supplies gas toward the molten pool through a supply port disposed at a position away from the molten pool. The plurality of energy beams are irradiated at a position away from the straight line connecting the molten pool and the supply port along a direction intersecting the straight line. The processing system according to any one of Appendices 26 to 40. [Appendix 42] The processing system forms a molten pool on the object by irradiating the object with the plurality of energy beams. The processing system further includes a recovery device that recovers substances generated by the irradiation of the plurality of energy beams through a recovery port disposed at a position away from the molten pool. The plurality of energy beams are irradiated at a position away from the straight line connecting the molten pool and the recovery port along a direction intersecting the straight line. The processing system according to any one of Appendices 26 to 41. [Appendix 43] The processing system further includes a partition member that defines a space through which the energy beam from the irradiation optical system can propagate. The processing system according to any one of Appendices 12 to 42. [Appendix 44] The processing system further includes a gas supply device that supplies gas to the space. The processing system according to Appendix 43. [Appendix 45] The processing system further includes a material supply device that supplies material from a supply port. The gas supplied to the space is discharged from the space through a discharge port formed in the vicinity of the supply port in the partition member. The processing system according to Appendix 44.

[0154] At least a part of the constituent elements of each of the above-described embodiments can be appropriately combined with at least another part of the constituent elements of each of the above-described embodiments. It is not necessary to use some of the constituent elements of each of the above-described embodiments. Also, to the extent permitted by law, the disclosures of all the published gazettes and U.S. patents cited in each of the above-described embodiments are incorporated by reference to form part of the description herein.

[0155] The present invention is not limited to the above-described embodiments, and can be appropriately modified within a range not contrary to the gist or idea of the invention that can be read from the claims and the entire specification. A processing system with such modifications is also included in the technical scope of the present invention.

Explanation of Reference Numerals

[0156] SYS Processing system 1 Material supply source 2 Processing light source 3 Processing device 31 Processing head 311 Irradiation optical system 3111 Condensing optical system 32 Head drive system 4 Stage device 41 Stage 42 Stage drive system 6 Control device W Workpiece M Modeling material SL Structural layer MS Modeling surface EL Processing light

Claims

1. 1. A processing system for processing an object using an energy beam, comprising: an illumination optical system having a focusing optical system and configured to focus an energy beam incident on a pupil plane of the focusing optical system and illuminate the object; a detection device that detects object light including light from the object via the light collecting optical system; Equipped with At least a portion of a path of the object beam through the collection optical system is different from at least a portion of a path of the energy beam through the collection optical system. Processing system.

2. The path of the object beam in the collection optical system and the path of the energy beam in the collection optical system do not overlap. The processing system of claim 1 .

3. A region on the pupil plane through which the energy beam passes is different from a region on the pupil plane through which the object beam passes. The processing system according to claim 1 or 2.

4. On the pupil plane, the region through which the energy beam passes does not overlap with the region through which the object beam passes. The processing system of claim 3 .

5. The focusing optics irradiates a plurality of energy beams from different directions onto the object. The processing system according to any one of claims 1 to 4.

6. The plurality of energy beams are irradiated onto the object from different positions in a rotational direction around the optical axis of the focusing optical system. The processing system of claim 5 .

7. A first angle between a first energy beam of the plurality of energy beams and an optical axis of the focusing optical system and a second angle between a second energy beam of the plurality of energy beams and the optical axis are different from each other. The processing system according to claim 5 or 6.

8. The detection device receives the object light traveling along an optical path different from an optical path along which the plurality of energy beams pass between the object and the focusing optical system. The processing system according to any one of claims 1 to 7.

9. The detection device further includes an illumination device that irradiates the object with illumination light via the light collecting optical system. The processing system according to any one of claims 1 to 8.

10. The area on the object irradiated with the illumination light includes an area on the object irradiated with the energy beam. The processing system of claim 9.

11. The object light includes the illumination light passing through the object. The processing system according to claim 9 or 10.

12. The object beam includes light generated by irradiating the object with the energy beam. The processing system according to any one of claims 1 to 11.

13. a molten pool is formed on the object by the energy beam from the focusing optics; The object beam includes light from the molten pool. The processing system of claim 12.

14. The detection device includes an imaging device. The processing system according to any one of claims 1 to 13.

15. The wavelength of the energy beam is different from the wavelength of the object beam. The processing system according to any one of claims 1 to 14.

16. At least a portion of the wavelength range of the energy beam and at least a portion of the wavelength range of the object light overlap.

16. The processing system according to any one of claims 1 to 15.

17. The detection device includes a light sending unit that sends measurement light to the object via the light collecting optical system, and a light receiving unit that receives the measurement light that has passed through the object via the light collecting optical system as at least a part of the object light.

17. The processing system according to any one of claims 1 to 16.

18. The area on the object onto which the measurement light is irradiated includes an area on the object onto which the energy beam is irradiated.

20. The processing system of claim 17.

19. The measurement light passing through the object includes scattered light from the object.

19. A processing system according to claim 17 or 18.

20. a material supplying device that supplies a material toward a position on the object where the energy beam is irradiated through an opening formed in a final optical member that constitutes the focusing optical system; 20. The processing system of any one of claims 1 to 19.

21. At least a portion of the material supply device is disposed along the optical axis of the focusing optical system.

21. The processing system of claim 20.

22. a gas supply device that supplies a gas to a space between the optical members of the focusing optical system, the focusing optical system includes a plurality of optical members including the final optical member, At least a portion of the gas is supplied to the space on the exit surface side of the final optical element through the opening.

22. A processing system according to claim 20 or 21.

23. A gas guide member is provided to guide the gas from the opening to the object.

23. The processing system of claim 22.

24. The gas guide member surrounds at least a portion of the material supply device.

24. The processing system of claim 23.

25. 1. A processing system for processing an object using an energy beam, comprising: an irradiation optical system that irradiates the object with a plurality of energy beams as the energy beam; a beam characteristic changing device for individually changing the characteristics of at least one of the plurality of energy beams; A processing system comprising:

26. The beam characteristic changing device changes the characteristics of each of the plurality of energy beams.

26. The processing system of claim 25.

27. The beam characteristic changing device changes the characteristic of one of the plurality of energy beams so that the characteristic of the one energy beam is different from the characteristic of another energy beam different from the one energy beam.

27. A processing system according to claim 25 or 26.

28. 1. A processing system for processing an object using an energy beam, comprising: an irradiation optical system that irradiates the object with a plurality of energy beams as the energy beam; a beam characteristic changing device for changing characteristics of at least one of the plurality of energy beams; Equipped with A characteristic of a first energy beam of the plurality of energy beams is different from a characteristic of a second energy beam of the plurality of energy beams. Processing system.

29. The beam characteristic modification device modifies a characteristic of the at least one energy beam based on a shape of the object.

29. The processing system of any one of claims 25 to 28.

30. a moving device that moves at least one of the object and the irradiation position of the energy beam, The beam characteristic modification device modifies a characteristic of the at least one energy beam based on a direction of movement by the movement device.

30. The processing system of any one of claims 25 to 29.

31. The beam characteristic modification device modifies the characteristics to modify the distribution of the energy beam on the surface of the object.

31. The processing system of any one of claims 25 to 30.

32. 1. A processing system for processing an object using an energy beam, comprising: an irradiation optical system that irradiates the object with a plurality of energy beams as the energy beam; a beam characteristic changing device for changing characteristics of at least one of the plurality of energy beams; Equipped with The beam characteristic changing device is capable of setting a characteristic of a first energy beam of the plurality of energy beams to be different from a characteristic of a second energy beam of the plurality of energy beams. Processing system.

33. 1. A processing system for processing an object using an energy beam, comprising: an irradiation optical system that irradiates the object with a plurality of energy beams as the energy beam; a beam characteristic setting device capable of setting a characteristic of a first energy beam among the plurality of energy beams to be different from a characteristic of a second energy beam among the plurality of energy beams; A processing system comprising:

34. The plane where the multiple energy beams overlap is offset from the surface of the object.

34. The processing system of any one of claims 25 to 33.

35. The device further includes a distance changer for changing the distance between the surface on which the plurality of energy beams are superimposed and the surface of the object.

35. The processing system of any one of claims 25 to 34.

36. the irradiation optical system forms a molten pool on the object with the plurality of energy beams; Varying the distribution of the at least one energy beam to change the formation of the molten pool.

36. The processing system of any one of claims 25 to 35.

37. The formation state of the molten pool includes a temperature distribution of the molten pool.

37. The processing system of claim 36.

38. a detector for receiving light from the molten pool; Modifying a characteristic of the at least one energy beam based on detection results from the detection device 38. A processing system according to claim 36 or 37.

39. The characteristics of the energy beam include an intensity of the energy beam.

39. The processing system of any one of claims 25 to 38.

40. The characteristics of the energy beam include an intensity distribution of the energy beam on the surface of the object.

40. The processing system of any one of claims 25 to 39.

41. 1. A processing system for processing an object using an energy beam, comprising: an irradiation optical system that irradiates the object with a plurality of energy beams as the energy beam; a distance changing device that changes a distance between a surface on which the plurality of energy beams are superimposed and a surface of the object to change a distribution of the energy beams on the surface of the object; A processing system comprising:

42. the irradiation optical system includes a focusing optical system that focuses the plurality of energy beams; The overlapping surface is located at the rear focal position of the focusing optical system.

42. The processing system of claim 41.

43. The method further comprises: providing a beam characteristic modification device for modifying at least one characteristic of the plurality of energy beams.

43. The processing system according to claim 41 or 42.

44. The beam characteristic changing device changes the characteristics of each of the plurality of energy beams.

44. The processing system of claim 43.

45. The characteristics of the energy beam include an intensity of the energy beam.

45. The processing system of any one of claims 41 to 44.

46. the material supply device supplies the material from a material supply direction intersecting a surface of the object; The material supply direction is the direction in which the distance is changed by the distance change device.

46. ​​The processing system of any one of claims 41 to 45.

47. The distance change device changes the distance in accordance with the shape of the object.

47. The processing system of any one of claims 41 to 46.

48. the irradiation optical system forms a molten pool on the object with the plurality of energy beams; The distance change device changes the distance to change the formation state of the molten pool.

48. The processing system of any one of claims 41 to 47.

49. a detector for receiving light from the molten pool; The distance change device changes the distance based on the detection result of the detection device.

49. The processing system of claim 48.

50. a moving device that moves at least one of the object and the irradiation position of the energy beam, The distance change device changes the distance based on a moving direction of the moving device.

50. The processing system of any one of claims 41 to 49.

51. The distribution of the energy beam includes an intensity distribution of the energy beam on the surface of the object.

51. The processing system of any one of claims 41 to 50.

52. Addition processing is performed on the object.

52. The processing system of any one of claims 1 to 51.

53. The object is subjected to removal processing.

53. The processing system of any one of claims 1 to 52.

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