Metal plate for vapor deposition mask, vapor deposition mask and method of manufacturing the same

Abstract

To provide a metal plate used to manufacture a vapor deposition mask, a method of manufacturing the vapor deposition mask, and the vapor deposition mask which has uniform and fine through holes.SOLUTION: A metal plate for a vapor deposition mask includes a base metal plate 100a and surface layers 110, 120 arranged on the base metal plate, the surface layer includes a mutually different element from the base metal plate or has a different composition ratio, and the etching speed of the base metal plate is larger than that of the surface layers. According to an embodiment, there is provided a method of manufacturing a vapor deposition mask of 2.5 or larger in an etching factor. The vapor deposition mask according to the embodiment includes a vapor deposition pattern region and a non-vapor deposition region, the vapor deposition region includes a plurality of through holes, and is also divided into an effective region and an outline region, and a non-effective region, and the through holes may be formed in the effective region and the outline region.SELECTED DRAWING: Figure 10

Description

[Technical field]

[0001] The embodiment relates to a metal plate. In particular, the embodiment relates to a metal plate used for a deposition mask and its More specifically, the present invention relates to a method for manufacturing an OLED panel using a deposition mask according to an embodiment. It can be made. [Background technology]

[0002] The demand for high resolution and low power consumption display devices has led to the development of LCDs and other LCDs. 2. Description of the Related Art A variety of display devices, such as field emission display devices, have been developed.

[0003] Electroluminescent displays have superior features compared to liquid crystal displays, such as low light emission, low power consumption, and high resolution. Due to its characteristics, it is attracting attention as a next-generation display device.

[0004] There are two types of electroluminescent display devices: organic light-emitting display devices and inorganic light-emitting display devices. Depending on the material, they can be classified as organic light emitting display devices and inorganic light emitting display devices.

[0005] Among these, organic light-emitting display devices are advantageous in that they have a wide viewing angle and a fast response speed. , and is attracting attention due to the requirement for low power consumption.

[0006] The organic material that constitutes such a light-emitting layer is a fine metal mask. By using a masking method, a pattern for forming pixels can be formed on a substrate.

[0007] At this time, the fine metal mask, i.e., the deposition mask, is a mask for forming a pattern on the substrate. After aligning the fine metal mask on the substrate, Red, green, and red pixels are formed by evaporating organic materials. A blue pattern can be formed.

[0008] Recently, various electronic devices such as virtual reality (VR) devices have High-resolution (UHD, Ultra High Definition) display devices are required. This will lead to the development of fine patterns that can form ultra-high resolution (UHD class) patterns. Therefore, a fine metal mask with through holes of this size is required.

[0009] The metal plate used as the deposition mask has multiple through holes formed by the etching process. It is possible.

[0010] In this case, if the through holes are not uniform, the uniformity of deposition may be reduced. The deposition efficiency of the pattern formed by the above process is reduced, which reduces the process efficiency. There was a problem.

[0011] On the other hand, fine patterns that can form high resolution or ultra-high resolution (UHD class) patterns However, there is a problem in that it is difficult to form through holes of a uniform size.

[0012] Even if minute through-holes are formed, adjacent through-holes are not connected to each other. Therefore, there is a problem that deposition failure may occur.

[0013] Therefore, a deposition mask substrate having a new structure, a deposition mask, and a manufacturing method thereof are required. do. Summary of the Invention [Problem to be solved by the invention]

[0014] The embodiment is for providing a deposition mask having uniform through-holes.

[0015] The embodiments are for providing an evaporation mask having uniform and fine through holes.

Means for Solving the Problems

[0016] The metal plate used for manufacturing the evaporation mask includes a base metal plate; a first surface layer disposed on the first surface of the base metal plate; and a second surface layer disposed on the second surface of the base metal plate opposite to the first surface, wherein the first surface layer and the second surface layer contain elements different from each other or have different composition ratios, and the etching rate of the base metal plate is greater than the etching rates of the first surface layer and the second surface layer. The manufacturing method of the evaporation mask according to the embodiment includes a step of preparing a base metal plate; a step of disposing a first surface layer on the first surface of the base metal plate; a step of disposing a second surface layer on the second surface of the base metal plate; a photoresist layer forming step of disposing a first photoresist layer on the first surface layer and disposing a second photoresist layer on the second surface layer; and an etching step of forming a through hole in which the first through hole on the first surface communicates with the second through hole on the second surface, wherein in the etching step, the etching factor calculated by the following formula 1 for at least one of the first through hole and the second through hole is 2.5 or more. <Formula 1> Etching Factor = B / A In the above formula, B is the depth of one of the etched first through hole and the second through hole, and in the above formula, A means the width of the photoresist layer extending from the bridge region on the one through hole and protruding in the central direction of the one through hole.

[0017] The manufacturing method of the evaporation mask according to the embodiment includes a step of preparing a base metal plate; a step of disposing a first surface layer on the first surface of the base metal plate; a step of disposing a second surface layer on the second surface of the base metal plate; a step of disposing a first photoresist layer on the first surface layer and disposing a second photoresist layer on the second surface layer; and an etching step of forming a through hole in which the first through hole on the first surface communicates with the second through hole on the second surface, wherein in the etching step, the etching factor calculated by the following formula 1 for at least one of the first through hole and the second through hole is 2.5 or more. The manufacturing method of the evaporation mask according to the embodiment includes a step of preparing a base metal plate; a step of disposing a first surface layer on the first surface of the base metal plate; a step of disposing a second surface layer on the second surface of the base metal plate; a step of disposing a first photoresist layer on the first surface layer and disposing a second photoresist layer on the second surface layer; and an etching step of forming a through hole in which the first through hole on the first surface communicates with the second through hole on the second surface, wherein in the etching step, the etching factor calculated by the following formula 1 for at least one of the first through hole and the second through hole is 2.5 or more. The manufacturing method of the evaporation mask according to the embodiment includes a step of preparing a base metal plate; a step of disposing a first surface layer on the first surface of the base metal plate; a step of disposing a second surface layer on the second surface of the base metal plate; a step of disposing a first photoresist layer on the first surface layer and disposing a second photoresist layer on the second surface layer; and an etching step of forming a through hole in which the first through hole on the first surface communicates with the second through hole on the second surface, wherein in the etching step, the etching factor calculated by the following formula 1 for at least one of the first through hole and the second through hole is 2.5 or more. The manufacturing method of the evaporation mask according to the embodiment includes a step of preparing a base metal plate; a step of disposing a first surface layer on the first surface of the base metal plate; a step of disposing a second surface layer on the second surface of the base metal plate; a step of disposing a first photoresist layer on the first surface layer and disposing a second photoresist layer on the second surface layer; and an etching step of forming a through hole in which the first through hole on the first surface communicates with the second through hole on the second surface, wherein in the etching step, the etching factor calculated by the following formula 1 for at least one of the first through hole and the second through hole is 2.5 or more. The manufacturing method of the evaporation mask according to the embodiment includes a step of preparing a base metal plate; a step of disposing a first surface layer on the first surface of the base metal plate; a step of disposing a second surface layer on the second surface of the base metal plate; a step of disposing a first photoresist layer on the first surface layer and disposing a second photoresist layer on the second surface layer; and an etching step of forming a through hole in which the first through hole on the first surface communicates with the second through hole on the second surface, wherein in the etching step, the etching factor calculated by the following formula 1 for at least one of the first through hole and the second through hole is 2.5 or more. The manufacturing method of the evaporation mask according to the embodiment includes a step of preparing a base metal plate; a step of disposing a first surface layer on the first surface of the base metal plate; a step of disposing a second surface layer on the second surface of the base metal plate; a step of disposing a first photoresist layer on the first surface layer and disposing a second photoresist layer on the second surface layer; and an etching step of forming a through hole in which the first through hole on the first surface communicates with the second through hole on the second surface, wherein in the etching step, the etching factor calculated by the following formula 1 for at least one of the first through hole and the second through hole is 2.5 or more. The manufacturing method of the evaporation mask according to the embodiment includes a step of preparing a base metal plate; a step of disposing a first surface layer on the first surface of the base metal plate; a step of disposing a second surface layer on the second surface of the base metal plate; a step of disposing a first photoresist layer on the first surface layer and disposing a second photoresist layer on the second surface layer; and an etching step of forming a through hole in which the first through hole on the first surface communicates with the second through hole on the second surface, wherein in the etching step, the etching factor calculated by the following formula 1 for at least one of the first through hole and the second through hole is 2.5 or more. <Formula 1> Etching Factor = B / A In the above formula, B is the depth of one of the etched first through hole and the second through hole, and in the above formula, A means the width of the photoresist layer extending from the bridge region on the one through hole and protruding in the central direction of the one through hole. In the above formula, B is the depth of one of the etched first through hole and the second through hole, and in the above formula, A means the width of the photoresist layer extending from the bridge region on the one through hole and protruding in the central direction of the one through hole. In the above formula, B is the depth of one of the etched first through hole and the second through hole, and in the above formula, A means the width of the photoresist layer extending from the bridge region on the one through hole and protruding in the central direction of the one through hole.

[0018] The vapor deposition mask of the embodiment includes a base metal plate including a first surface and a second surface facing each other; the first surface layer on the first surface; and the second surface layer on the second surface; and includes a metal plate for a vapor deposition mask , the metal plate for the vapor deposition mask includes a vapor deposition pattern region and a non-vapor deposition region, the vapor deposition pattern region includes a plurality of through holes, and the vapor deposition pattern region is divided into an effective region, an outer peripheral region, and a non-effective region, and through holes can be formed in the effective region and the outer peripheral region.

Advantages of the Invention

[0019] The metal plate according to the embodiment can include a base metal plate and a surface layer disposed on the base metal plate. It is possible.

[0020] By disposing the surface layer on the first surface of the base metal plate and on the second surface facing the first surface, respectively, etching rates on the first surface and the second surface of the base metal plate can be slowed down. Accordingly, the metal plate including the surface layer can form uniform through holes. That is, the metal plate used for manufacturing the vapor deposition mask can include through holes with improved uniformity, so that the uniformity of the pattern formed therethrough can be improved, and the process efficiency can be improved by increasing the vapor deposition efficiency of the pattern. Therefore, the OLED panel manufactured with the vapor deposition mask according to the embodiment can be excellent in the vapor deposition

[0021] efficiency of the pattern and can have improved vapor deposition uniformity.

Brief Description of the Drawings

[0022]

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[0023] Hereinafter, embodiments will be specifically described with reference to the accompanying drawings.

[0024] In the description with reference to the accompanying drawings, the same components are given the same reference numerals, and redundant descriptions thereof are omitted.

[0025] Terms such as first and second can be used to describe components, but the components are not limited to the above terms and are used only for the purpose of distinguishing one component from another component.

[0026] Also, when a certain part "includes" a certain component, unless there is a contrary description, it means that it can further include other components rather than excluding other components. This is what it means.

[0027] Referring to FIGS. 1 to 3, the process of depositing an organic substance on a substrate will be described.

[0028] FIG. 1 is a diagram showing an organic vapor deposition apparatus including a vapor deposition mask 100 according to an embodiment.

[0029] The organic vapor deposition apparatus can include a vapor deposition mask 100, a mask frame 200, a substrate 300, an organic vapor deposition container 400, and a vacuum chamber 500.

[0030] The vapor deposition mask 100 can include a plurality of through holes TH. The vapor deposition mask 10 0 can be a substrate for a vapor deposition mask including a plurality of through holes TH. At this time, the through holes can be formed to correspond to a pattern formed on the substrate.

[0031] The mask frame 200 can include an opening. The plurality of through holes of the vapor deposition mask 100 can be disposed in a region corresponding to the opening. Accordingly, the organic substance supplied to the organic vapor deposition container 400 can be deposited on the substrate 300. The vapor deposition mask can be disposed and fixed on the mask frame 200. For example, the vapor deposition mask can be pulled and fixed on the mask frame 200 by welding.

[0032] Referring to FIGS. 1 and 2, the vapor deposition mask 100 can be pulled in opposite directions at the ends disposed on the outermost contour of the vapor deposition mask 100. The vapor deposition mask 100 is the ​ In the longitudinal direction of the evaporation mask 100, one end of the evaporation mask 100 and the other end opposite to the one end can be pulled in opposite directions to each other. One end of the evaporation mask 100 and the other end are facing each other and can be arranged in parallel. One end of the evaporation mask 100 can be any one of the ends forming four side surfaces arranged on the outermost contour of the evaporation mask 100. For example, the evaporation mask 100 can be pulled with a force of 0.4 to 1.5 kgf. Accordingly, the pulled evaporation mask 100 can be mounted on the mask frame 200.

[0033] Next, the evaporation mask 100 can be fixed to the mask frame 200 by welding the side surface region of the evaporation mask 100, that is, the end portion. Then, a part of the evaporation mask 100 disposed outside the mask frame 200 can be removed by a method such as cutting. For example, when the evaporation mask 100 is deformed during the welding process, and the evaporation mask 100 is disposed in a region excluding the fixed region of the evaporation mask 100 and the mask frame 200, a part of the evaporation mask can be removed. 100

[0034] Referring to FIGS. 1 and 3, the substrate 300 can be a substrate used in the manufacture of a display device. On the substrate 300, patterns of red (Red), green (Green), and blue (Blue) can be formed to form pixels of the three primary colors of light.

[0035] The organic material evaporation container 400 can be a crucible. An organic material can be disposed inside the crucible.

[0036] ​​​​By supplying a heat source and / or current to the crucible within the vacuum chamber 500, the organic substance can be deposited on the substrate 100.

[0037] FIG. 3 is an enlarged view of one through-hole of the vapor deposition mask 100.

[0038] The vapor deposition mask 100 can include a first surface 101 and a second surface 102 facing the first surface. It can be like this.

[0039] The first surface 101 of the vapor deposition mask 100 includes a first through-hole V1, and the second surface 102 of the vapor deposition mask 100 can include a second through-hole V2. It can be like this.

[0040] The through-hole can be formed by a connecting portion CA where the first through-hole V1 and the second through-hole V2 communicate with each other. It can be formed.

[0041] The width of the second through-hole V2 may be larger than the width of the first through-hole V1. At this time, the width of the first through-hole V1 is measured on the first surface 101, and the width of the second through-hole V2 can be measured on the second surface 102. The width of the first through-hole V1 is measured on the first surface 101, and the width of the second through-hole V2 can be measured on the second surface 102. It can be measured.

[0042] The first through-hole V1 can be arranged facing the substrate 300. Thereby, the first through-hole V1 can have a shape corresponding to the deposit D, that is, the pattern. The first through-hole V1 can have a shape corresponding to the deposit D, that is, the pattern.

[0043] The second through-hole V2 can be arranged facing the organic vapor deposition container 400. Thereby, the second through-hole V2 can accommodate the organic substance supplied from the organic vapor deposition container 400 in a wide width, and a fine pattern can be quickly formed on the substrate 300 through the first through-hole V1 having a smaller width than the second through-hole V2. the second through-hole V2 can accommodate the organic substance supplied from the organic vapor deposition container 400 in a wide width, and a fine pattern can be quickly formed on the substrate 300 through the first through-hole V1 having a smaller width than the second through-hole V2. It can be quickly formed.

[0044] Figs. 4 to 7 are diagrams showing plan views of a substrate for a vapor deposition mask and a vapor deposition mask according to an embodiment. That is.

[0045] Referring to Figs. 4 to 7, the substrate for a vapor deposition mask and the vapor deposition mask according to the embodiment can include a vapor deposition pattern region DA and a non-vapor deposition region NDA.

[0046] The vapor deposition pattern region DA can be a region for vapor-depositing an organic substance through a vapor deposition pattern portion. It can be.

[0047] The vapor deposition pattern region DA can include a plurality of vapor deposition pattern portions AA 1, AA2, and AA3 included in one vapor deposition mask.

[0048] The plurality of vapor deposition pattern portions can include a first effective region AA1, a second effective region AA2, and a third effective region AA3. One vapor deposition pattern portion can be any one of the first effective region AA1, the second effective region AA2, and the third effective region AA3.

[0049] In the case of a small display device such as a smartphone, one vapor deposition pattern portion included in one vapor deposition mask can be for forming one display device. Accordingly, one vapor deposition mask can include a plurality of vapor deposition pattern portions and can form a plurality of display devices simultaneously. Therefore, the vapor deposition mask according to the embodiment can improve the process efficiency. It can be. That is.

[0050] Alternatively, in the case of a large display device such as a television, a plurality of vapor deposition pattern portions included in one vapor deposition mask can be a part for forming one display device. At this time, the plurality of vapor deposition pattern portions can be for preventing deformation due to the load of the mask. It can be.

[0051] The vapor deposition pattern region DA can include a plurality of separated regions IA1, IA 2 included in one vapor deposition mask.

[0052] Separation regions IA1, IA2 can be arranged between adjacent vapor deposition pattern portions. The separation region can be a separation region between a plurality of vapor deposition pattern portions. For example, a first separation region IA1 can be arranged between the first effective region AA 1 and the second effective region AA2. For example, a second separation region IA2 can be arranged between the second effective region AA2 and the third effective region AA3. The separation region enables distinction between adjacent vapor deposition pattern portions and allows one vapor deposition mask to support a plurality of vapor deposition pattern

[0053] The vapor deposition mask can include non-vapor deposition regions NDA on both side portions in the length direction of the vapor deposition pattern region DA. The vapor deposition mask according to the embodiment can include the non-vapor deposition regions NDA on both sides in the horizontal direction of the vapor deposition pattern region DA.

[0054] The non-vapor deposition region NDA of the vapor deposition mask can be a region not involved in vapor deposition.

[0055] The non-vapor deposition region NDA can include frame fixing regions FA1, FA2 for fixing to a mask frame. For example, the non-vapor deposition region NDA of the vapor deposition mask can include the first frame fixing region FA1 on one side of the vapor deposition pattern region DA, and can include the second frame fixing region FA2 on the other side opposite to the one side of the vapor deposition pattern region DA. The first frame fixing region FA1 and the second frame fixing region FA2 can be regions fixed to the mask frame by welding. ​

[0056] The non-deposited area NDA can include half-etching portions HF1 and HF2. For example, the non-deposited area NDA of the deposition mask can include a first half-etching portion HF1 on one side of the deposition pattern area DA, and can include a second half-etching portion HF2 on the other side opposite to the one side of the deposition pattern area DA. The first half-etching portion HF1 and the second half-etching portion HF2 can be areas where grooves are formed in the depth direction of the deposition mask. The first half-etching portion HF1 and the second half-etching portion HF2 can have groove portions with about

[0057] half of the thickness of the deposition mask, and can disperse the stress during the tension of the deposition mask.

[0058] Also, a surface layer is formed in the deposition pattern area DA, and no surface layer is formed in the non-deposited area NDA, or only a part of one or both sides of the substrate forms a surface layer, or only a part of one side forms a surface layer, so that the etching factors of the first or second face and the half-etching portion are formed differently to adjust stress

[0059] dispersion. The half-etching portion can be formed in the non-effective area UA of the deposition pattern area DA. The half-etching portions can be dispersed and

[0060] Further, the half-etching portion can also be formed in the frame fixing region and / or the periphery of the frame fixing region. Accordingly, when fixing the vapor deposition mask to the frame and / or when vapor-depositing the vapor-deposited material after fixing the vapor deposition mask to the frame, the stress of the vapor deposition mask generated can be evenly dispersed. Accordingly, the vapor deposition mask can be maintained to have uniform through holes. The frame fixing regions FA1, FA2 for fixing to the mask frame of the non-vapor deposition region NDA are disposed between the half-etching portions HF1, HF2 of the non-vapor deposition region NDA and the effective regions of the vapor deposition pattern region DA adjacent to the half-etching portions HF1, HF2. For example, the first frame fixing region FA1 can be disposed between the first half-etching portion HF1 of the non-vapor deposition region NDA and the first effective region AA1 of the vapor deposition pattern region DA adjacent to the first half-etching portion HF1. For example, the second frame fixing region FA2 can be disposed between the second half-etching portion HF2 of the non-vapor deposition region NDA and the third effective region AA3 of the vapor deposition pattern region DA adjacent to the second half-etching portion HF2. Accordingly, a plurality of vapor deposition pattern portions can be fixed simultaneously. When fixing the vapor deposition mask to the frame and / or when vapor-depositing the vapor-deposited material after fixing the vapor deposition mask to the frame, the stress of the vapor deposition mask generated can be evenly dispersed. Accordingly, the vapor deposition mask can be maintained to have uniform through holes.

[0061] The frame fixing regions FA1, FA2 for fixing to the mask frame of the non-vapor deposition region NDA are disposed between the half-etching portions HF1, HF2 of the non-vapor deposition region NDA and the effective regions of the vapor deposition pattern region DA adjacent to the half-etching portions HF1, HF2. For example, the first frame fixing region FA1 can be disposed between the first half-etching portion HF1 of the non-vapor deposition region NDA and the first effective region AA1 of the vapor deposition pattern region DA adjacent to the first half-etching portion HF1. For example, the second frame fixing region FA2 can be disposed between the second half-etching portion HF2 of the non-vapor deposition region NDA and the third effective region AA3 of the vapor deposition pattern region DA adjacent to the second half-etching portion HF2. Accordingly, a plurality of vapor deposition pattern portions can be fixed simultaneously. The frame fixing regions FA1, FA2 for fixing to the mask frame of the non-vapor deposition region NDA are disposed between the half-etching portions HF1, HF2 of the non-vapor deposition region NDA and the effective regions of the vapor deposition pattern region DA adjacent to the half-etching portions HF1, HF2. For example, the first frame fixing region FA1 can be disposed between the first half-etching portion HF1 of the non-vapor deposition region NDA and the first effective region AA1 of the vapor deposition pattern region DA adjacent to the first half-etching portion HF1. For example, the second frame fixing region FA2 can be disposed between the second half-etching portion HF2 of the non-vapor deposition region NDA and the third effective region AA3 of the vapor deposition pattern region DA adjacent to the second half-etching portion HF2. Accordingly, a plurality of vapor deposition pattern portions can be fixed simultaneously.

[0062] The vapor deposition mask can include semi-circular open portions at both ends in the horizontal direction X. The non-vapor deposition region NDA of the vapor deposition mask can include one semi-circular open portion at each of both ends in the horizontal direction. For example, the non-vapor deposition region NDA of the vapor deposition mask can include an open portion with the center in the vertical direction Y opened on one side in the horizontal direction. For example, The non-vapor deposition region NDA of the vapor deposition mask can include one semi-circular open portion at each of both ends in the horizontal direction. For example, the non-vapor deposition region NDA of the vapor deposition mask can include an open portion with the center in the vertical direction Y opened on one side in the horizontal direction. For example, ​​The non-deposition region NDA of the mask may include an open portion that is open at the center in the vertical direction on the other side opposite to the one side in the horizontal direction. That is, both ends of the deposition mask may include open portions at the 1 / 2 point of the vertical length. For example, both ends of the deposition mask may be in the shape of a horseshoe. The half-etching portion may be formed in various shapes.

[0063] Referring to FIGS. 4 to 6, the half-etching portion may include a semi-circular groove portion.

[0064] The groove may be formed on at least one of the first surface 101 or the second surface 102 of the deposition mask. Desirably, the half-etching portion may be formed on the surface corresponding to the first through-hole (the surface side where deposition is performed). Accordingly, the half-etching portion can disperse the stress that may be generated due to the size difference between the first through-hole and the second through-hole. Or, the half-etching portion may be formed on both the first surface and the second surface in order to disperse the stress of the first surface and the second surface. At this time, the half-etching region of the half-etching portion may be wider on the surface corresponding to the first through-hole (the surface side where deposition is performed). That is, the deposition mask according to the embodiment may include the half-etching portion by forming grooves on the first surface and the second surface of the deposition mask, respectively. Specifically, the depth of the groove of the half-etching portion formed on the first surface may be greater than the depth of the groove of the half-etching portion formed on the second surface. Accordingly, the half-etching portion can disperse the stress that may be generated due to the size difference between the first through-hole and the second through-hole. First surface can disperse the stress that may be generated due to the size difference between the first through-hole and the second through-hole.

[0065] Or, the half-etching portion may be formed on both the first surface and the second surface in order to disperse the stress of the first surface and the second surface. At this time, the half-etching region of the half-etching portion may be wider on the surface corresponding to the first through-hole (the surface side where deposition is performed). That is, the deposition mask according to the embodiment may include the half-etching portion by forming grooves on the first surface and the second surface of the deposition mask, respectively. Specifically, the depth of the groove of the half-etching portion formed on the first surface may be greater than the depth of the groove of the half-etching portion formed on the second surface. Accordingly, the half-etching portion can disperse the stress that may be generated due to the size difference between the first through-hole and the second through-hole. That is, the deposition mask according to the embodiment may include the half-etching portion by forming grooves on the first surface and the second surface of the deposition mask, respectively. Specifically, the depth of the groove of the half-etching portion formed on the first surface may be greater than the depth of the groove of the half-etching portion formed on the second surface. Accordingly, the half-etching portion can disperse the stress that may be generated due to the size difference between the first through-hole and the second through-hole. The groove of the half-etching portion formed on the second surface. In this regard, the half-etching portion can disperse the stress that may be generated due to the size difference between the first through-hole and the second through-hole. First surface The depth of the groove of the half-etching portion formed on the second surface. Accordingly, the half-etching portion can disperse the stress that may be generated due to the size difference between the first through-hole and the second through-hole. First surface The depth of the groove of the half-etching portion formed on the second surface. Accordingly, the half-etching portion can disperse the stress that may be generated due to the size difference between the first through-hole and the second through-hole. can disperse the stress that may be generated due to the size difference between the first through-hole and the second through-hole. First surface​ The formation of the holes, the second surface holes and the half-etched portions is performed by forming the first and second surfaces of the deposition mask. The areas can be made similar, and misalignment of the through holes can be prevented.

[0066] In addition, the grooves formed on the first surface and the second surface can be formed so as to be offset from each other. This can prevent the half-etched portion from forming a through hole.

[0067] The half-etched portion may include a curved surface and a flat surface.

[0068] The plane of the first half-etched portion HF1 is adjacent to the first effective area AA1. The first plane may be disposed parallel to an end of the deposition mask in the longitudinal direction. The curved surface of the half-etched portion HF1 is convex toward one end of the deposition mask in the longitudinal direction. For example, the curved surface of the first half-etching portion HF1 may be The half-length point of the semicircular shape may be formed to correspond to the radius of the semicircular shape.

[0069] The plane of the second half-etched portion HF2 is adjacent to the third effective area AA3. The second plane may be disposed parallel to an end of the deposition mask in the longitudinal direction. The curved surface of the half-etched portion HF2 is convex toward the other end of the deposition mask in the longitudinal direction. For example, the curved surface of the second half-etching portion HF2 may be The half-length point of the semicircular shape may be formed to correspond to the radius of the semicircular shape.

[0070] On the other hand, the curved surfaces of the open areas located at both ends of the deposition mask are directed toward the half-etched area. Accordingly, the openings located at both ends of the deposition mask can be formed by the first Or, the isolation distance may be the shortest at the midpoint in the vertical direction of the second half-etching portion and the vapor deposition mask. It may be the shortest.

[0071] Referring to FIG. 7, the half-etching portion may be square-shaped. The first half etching portion HF1 and the second half-etching portion HF2 may be rectangular or square shaped.

[0072] The vapor deposition mask according to the embodiment can include a plurality of half-etching portions. In the embodiment of the vapor deposition mask, at least one of the vapor deposition pattern region DA and the non-vapor deposition region NDA can include a plurality of half-etching portions. The vapor deposition mask according to the embodiment can include half-etching portions only in the non-effective region UA. The non-effective region UA can be a region other than the effective region AA.

[0073] Referring to FIGS. 4 and 7, the vapor deposition mask according to the embodiment can include two half-etching portions. For example, the half-etching portions can include an even number of half-etching portions. The vapor deposition mask according to the embodiment can be arranged only in the non-vapor deposition region NDA .

[0074] The half-etching portions are preferably formed to be symmetric in the X-axis direction or the Y-axis direction with respect to the center of the mask. Through this, the tensile forces in both directions can be made the same.

[0075] Referring to FIG. 5, the vapor deposition mask according to the embodiment can include four half-etching portions. For example, the half-etching portions can include an even number of half-etching portions. It is possible. The vapor deposition mask according to the embodiment may include a plurality of half-etching parts only in the non-vapor deposition region NDA. parts.

[0076] A third half-etching part HF3 may be further included between the first half-etching part HF1 and the first effective region AA1. For example, the third half-etching part H F3 may be disposed between the first frame fixing region FA1 and the first effective region AA1. be.

[0077] A fourth half-etching part HF4 may be further included between the second half-etching part HF2 and the third effective region AA3. For example, the fourth half-etching part H F4 may be disposed between the second frame fixing region FA2 and the third effective region AA3. be.

[0078] The first half-etching part HF1 disposed at horizontally corresponding positions may have a shape corresponding to that of the second half-etching part HF2. Horizontally corresponding positions, the third half-etching part HF3 may have a shape corresponding to that of the fourth half-etching part H F4.

[0079] The first half-etching part HF1 disposed at different positions may have a shape different from either the third half-etching part HF3 or the fourth half-etching part HF4. However, the embodiment is not limited thereto, and the first half-etching part HF1, the second half-etching part HF2, the third half-etching part HF3, and the fourth half-etching part HF4 may all have the same shape, of course. In the embodiment It is possible. is not limited to this, and it goes without saying that the first half-etching part HF1, the second half-etching part HF2, the third half-etching part HF3, and the fourth half-etching part HF4 may all have the same shape. In the embodiment described second half-etching part HF2, the third half-etching part HF3, and the fourth half-etching part HF4 may all have the same shape, of course. In the embodiment etching part HF4 may all have the same shape, of course. In the embodiment ​​​Although four half-etching portions have been described, the half-etching portions can be formed in various shapes and numbers within the range formed in the non-effective region U A. Of course, it goes without saying that they can be formed in various shapes and numbers. That is to say, the shape of the half-etching portion may be any shape as long as it is formed to be symmetric with respect to the center of the horizontal direction X of the vapor deposition mask . Also, it goes without saying that the number of the half-etching portions can be six or more .

[0080] The third half-etching portion HF3 and the fourth half-etching portion HF4 can be in any shape . For example, the third half-etching portion HF3 and the fourth half-etching portion HF4 can be rectangular. The third half-etching portion HF3 and the fourth half -etching portion HF4 can be rectangular and extend in the vertical direction of the vapor deposition mask . Specifically , the length in the vertical direction Y of the third half-etching portion HF3 and the fourth half-etching portion HF4 may be longer than the length in the horizontal direction X . Along with this, the half-etching portion can effectively control the stress generated when fixing the vapor deposition mask to the frame .

[0081] Referring to FIG. 6, the vapor deposition mask according to the embodiment can include four half-etching portions . For example, the half-etching portion can include an even number of half-etching portions . The vapor deposition mask according to the embodiment can include a plurality of half-etching portions in the non-deposition region NDA and the deposition pattern region DA respectively .

[0082] The non-deposition region NDA can include the first half-etching portion HF1 and the second half-etch ing portion HF2

[0083] The vapor deposition pattern region DA may include a third half-etching portion HF3 and a fourth half-etching portion HF4.

[0084] The third half-etching portion HF3 may be disposed between the first effective region AA1 and the second effective region AA2. For example, the third half-etching portion HF3 may be disposed in the first separation region IA1.

[0085] The fourth half-etching portion HF3 may be disposed between the second effective region AA2 and the third effective region AA3. For example, the fourth half-etching portion HF4 may be disposed in the second separation region IA2.

[0086] The first half-etching portion HF1 disposed at positions corresponding to each other in the horizontal direction may have a shape corresponding to that of the second half-etching portion HF2. The third half-etching portion HF3 disposed at positions corresponding to each other in the horizontal direction may have a shape corresponding to that of the fourth half-etching portion HF4.

[0087] The first half-etching portion HF1 disposed at different positions may have a shape different from either the third half-etching portion HF3 or the fourth half-etching portion HF4. However, the embodiment is not limited thereto, and it is of course possible that the first half-etching portion HF1, the second half-etching portion HF2, the third half-etching portion HF3, and the fourth half-etching portion HF4 all have the same shape.

[0088] The third half-etching portion HF3 and the fourth half-etching portion HF4 are quadrilaterals. It may be in a state. For example, the third half-etching portion HF3 and the fourth half-etching portion HF4 may be rectangular. The third half-etching portion HF3 and the fourth half -etching portion HF4 may be rectangular and extend in the vertical direction of the vapor deposition mask. Specifically speaking, the third half-etching portion HF3 and the fourth half-etching portion HF4 may have a length in the vertical direction Y longer than the length in the horizontal direction X.

[0089] The length in the vertical direction Y of the open portion located at both ends of the vapor deposition mask may correspond to or be different from the length in the vertical direction of the half-etch ing portion.

[0090] For example, referring to FIGS. 4 to 6, the length d1 in the vertical direction of the planar portion of the first half-etching portion HF1 or the second half-etching portion HF2 may be larger than the length d2 in the vertical direction of the open portion.

[0091] For example, referring to FIGS. 5 and 6, the length d3 in the vertical direction of the third half-etching portion HF1 or the fourth half-etching portion HF2 may be larger than the length d2 in the vertical direction of the open portion. The length d3 in the vertical direction of the third half-etching portion HF1 or the fourth half-etch ing portion HF2 may correspond to the length d1 in the vertical direction of the planar portion of the first half-etching portion HF1 or the second half-etching portion HF2.

[0092] For example, referring to FIG. 7, the length d1 in the vertical direction of the first half-etching portion HF1 or the second half -etching portion HF2 may correspond to the length d2 in the vertical direction of the open portion. Accordingly, when the vapor deposition mask is pulled, the stress can be evenly distributed. ​ Since it can be cut, wave deformation of the evaporation mask can be reduced. Therefore, the evaporation mask according to the embodiment may have uniform through holes, so that the evaporation efficiency of the pattern can be improved.

[0093] Desirably, the vertical length d1 of the first half-etching portion HF1 or the second half-etching portion HF2 may be 80 to 200% of the vertical length d2 of the open portion (d1:d2 = 0.8 to 2:1). The vertical length d1 of the first half-etching portion HF1 or the second half-etching portion HF2 may be 90 to 150% of the vertical length d2 of the open portion (d1:d2 = 0.9 to 1.5:1). The vertical length d1 of the first half-etching portion HF1 or the second half-etching portion HF2 may be 95 to 110% of the vertical length d2 of the open portion (d1:d2 = 0.95 to 1.1:1).

[0094] Also, the vertical length d1 of the planar portion of the second half-etching portion HF2 and the vertical length d3 of the fourth half-etching portion HF2 may correspond to the vertical length of the first effective region AA1. Through this, a tensile force can be uniformly applied to the through holes formed in the effective region.

[0095] Desirably, the vertical length d1 of the first half-etching portion HF1 or the second half-etching portion HF2 may be 80 to 120% of the vertical length of the effective region.

[0096] Desirably, the vertical length d1 of the third half-etching portion HF3 or the fourth half-etching portion HF2 The vertical length d3 of F4 can be 80 to 120% of the vertical length of the effective area. It is possible.

[0097] Referring to the enlarged view of FIG. 4, the through holes included in the effective area and the non-effective area will be described. FIGS. 5 to 7 do not show enlarged views, but it is of course the case that the effective area and the non-effective area include through holes. Of course.

[0098] The evaporation mask can include an effective area AA and a non-effective area UA. The evaporation mask 100 can include an effective area AA including a plurality of through holes TH and a bridge area BR, and a non-effective area UA disposed on the outer periphery of the effective area. It can include.

[0099] The effective area AA can be the inner area when connecting the outer peripheries of the through holes located on the outermost periphery for depositing organic substances among the plurality of through holes. The non-effective area UA can be the outer area when connecting the outer peripheries of the through holes located on the outermost periphery for depositing organic substances among the plurality of through holes. The non-effective area UA can be the area excluding the effective area of the evaporation pattern area DA and the non-evaporation area NDA. The non-effective area UA can include outer peripheral areas OA1, OA2, OA3 surrounding the outer peripheries of the effective areas AA1, AA2, AA3. It can include. It can be.

[0100] The non-effective area UA is the area excluding the effective area of the evaporation pattern area DA and the non-evaporation area NDA. The non-effective area UA can include outer peripheral areas OA1, OA2, OA3 surrounding the outer peripheries of the effective areas AA1, AA2, AA3. The evaporation mask according to the embodiment can include a plurality of outer peripheral areas OA1, OA2, OA3 located on the outer peripheries of the plurality of evaporation pattern portions. The number of the evaporation pattern portions can correspond to the number of the outer peripheral areas. That is, one evaporation pattern portion can include one outer peripheral area separated from the end of one evaporation pattern portion by a certain distance in the horizontal and vertical directions respectively. It can include.

[0101] The evaporation mask according to the embodiment can include a plurality of outer peripheral areas OA1, OA2, OA3 located on the outer peripheries of the plurality of evaporation pattern portions. The number of the evaporation pattern portions can correspond to the number of the outer peripheral areas. That is, one evaporation pattern portion can include one outer peripheral area separated from the end of one evaporation pattern portion by a certain distance in the horizontal and vertical directions respectively. That is, one evaporation pattern portion can include one outer peripheral area separated from the end of one evaporation pattern portion by a certain distance in the horizontal and vertical directions respectively. It can include. It is possible.

[0102] The first effective region AA1 may be included within the first outer contour region OA1. The first effective region A A1 can include a plurality of through holes for forming a deposited material. The first effective region The first outer contour region OA1 surrounding the outer contour of the first effective region AA1 can include a plurality of through holes. The The first effective region AA1 can be square-shaped, and the first outer contour region OA1 can be square-shaped . For example, the first effective region AA1 can be rectangular, and the first outer contour region OA1 can be rectangular shaped. For example, the first effective region AA1 can be square-shaped, and the first outer contour region OA1 can be square-shaped.

[0103] The first outer contour region OA1 can further include two through holes each in the horizontal and vertical directions from the through hole located at the outermost contour of the first effective region AA1 . For example, in the first outer contour region OA1, two through holes can be arranged in a row in the horizontal direction at the upper and lower positions of the through hole located at the outermost contour of the first effective region AA1 . For example, in the first outer contour region OA1, two through holes can be arranged in a row in the vertical direction on the left and right sides of the through hole located at the outermost contour of the first effective region AA1 . The plurality of through holes included in the first outer contour region OA1 are for reducing the etching defect of the through hole located at the outermost contour of the effective region . Accordingly, the vapor deposition mask according to the embodiment can improve the uniformity of the plurality of through holes located in the effective region, and thereby improve the quality of the vapor deposition pattern manufactured therethrough . The plurality of through holes included in the first outer contour region OA1 are for reducing the etching defect of the through hole located at the outermost contour of the effective region . Accordingly, the vapor deposition mask according to the embodiment can improve the uniformity of the plurality of through holes located in the effective region, and thereby improve the quality of the vapor deposition pattern manufactured therethrough . One through hole respectively located at the upper and lower parts of the outermost contour of the first effective region AA1 is water

[0104] One through hole respectively located at the upper and lower parts of the outermost contour of the first effective region AA1 is water The through-hole set of the first outer contour region OA1 arranged in a row in the horizontal direction corresponds to the through-holes of the first effective region AA1 and can have a corresponding shape. Also, one through-hole located on each of the left and right sides of the outermost contour of the first effective region AA1 is arranged in a column in the vertical direction, and the through-hole set of the first outer contour region OA1 can have a shape corresponding to the through-holes of the first effective region AA1 . Accordingly, the uniformity of the through-holes included in the first effective region AA1 can be improved .

[0105] The through-holes included in the effective region may have a shape that partially corresponds to the through-holes included in the non-effective region . The through-holes included in the effective region may have a shape different from the through-holes located at the edge portion of the non-effective region .

[0106] The four through-holes EH located at the corners of the outermost contour of the first outer contour region OA1 may have a shape different from the through-holes included in the first effective region AA1

[0107] For example, the four edge holes EH located at the corners of the outermost contour of the first outer contour region OA1 may be circular. Here, the circular shape can mean a shape that includes a curved surface as a whole .

[0108] For example, the through-holes included in the first effective region AA1 may be square. Here , the square shape can be a rectangular shape and can mean a rectangular shape with rounded corners. That is , the through-holes included in the effective region AA1 may have different horizontal and vertical diameters .

[0109] The diameter of the edge hole EH is the horizontal diameter of the through-holes included in the effective region AA1 Either the diameter in the horizontal direction or the diameter in the vertical direction may be different from each other. For example, as shown in FIG. 4, the diameter of the edge hole EH may be different from the horizontal diameter of the through hole included in the effective region AA1. The diameter of the edge hole EH may be the same as the vertical diameter of the through hole included in the effective region AA1.

[0110] The through holes included in the remaining non-effective region excluding the edge hole EH may have a shape corresponding to the through holes included in the effective region.

[0111] In addition, the through holes included in the non-effective region may have a shape different from the through holes included in the effective region. Through this, the difference in stress due to the position of the vapor deposition mask can be adjusted.

[0112] In the non-effective region UA, a through hole edge portion is formed, and the edge portion can remove the vapor deposition defect at the edge portion of the effective region. That is, in the embodiment, by forming the edge hole EH of the vapor deposition mask in the non-effective region, the through hole located at the edge portion of the effective region can be located inside the edge hole EH. Accordingly, one of the through hole located at the edge portion of the effective region and the through hole located inside the effective region may have the same vapor deposition effect. Specifically, by including the through hole in the non-effective region UA, the uniformity of the through hole located at the edge portion of the effective region and the through hole located inside the effective region can be improved.

[0113] The second effective region AA2 may be included in the second outer contour region OA2. The second effective region AA2 may include a plurality of through holes for forming a vapor deposition material. The second effective region ​​​​​​​​​​​The second outer contour region OA2 surrounding the outer contour of AA2 can include a plurality of through holes.

[0114] The second effective region AA2 can have a shape corresponding to that of the first effective region AA1. The second outer contour region OA2 can have a shape corresponding to that of the first outer contour region OA1. .

[0115] The second outer contour region OA2 can further include two through holes each in the horizontal and vertical directions from the through hole located at the outermost contour of the second effective region AA2. For example, the second outer contour region OA2 can have two through holes arranged in a row horizontally at the upper and lower positions of the through hole located at the outermost contour of the second effective region AA2. For example, the second outer contour region OA2 can have two through holes arranged in a row vertically on the left and right sides of the through hole located at the outermost contour of the second effective region AA2. The plurality of through holes included in the second outer contour region OA2 are for reducing the etching defect of the through hole located at the outermost contour of the effective region. Accordingly, the vapor deposition mask according to the embodiment can improve the uniformity of the plurality of through holes located in the effective region, and through this, the quality of the vapor deposition pattern manufactured thereby can be improved. The set of through holes in the second outer contour region OA2 in which one through hole located at the upper and lower parts of the outermost contour of the second effective region AA2 is arranged in a row horizontally can have a shape corresponding to the through holes of the second effective region AA2. Also, the set of through holes in the second outer contour region OA2 in which one through hole located on the left and right sides of the outermost contour of the second effective region AA2 is arranged in a row vertically can have a shape corresponding to the through holes of the second effective region AA2.

[0116] The set of through holes in the second outer contour region OA2 in which one through hole located at the upper and lower parts of the outermost contour of the second effective region AA2 is arranged in a row horizontally can have a shape corresponding to the through holes of the second effective region AA2. Also, the set of through holes in the second outer contour region OA2 in which one through hole located on the left and right sides of the outermost contour of the second effective region AA2 is arranged in a row vertically can have a shape corresponding to the through holes of the second effective region AA2. can have a shape corresponding to the through holes of the second effective region AA2. This makes it possible to improve the uniformity of the through holes included in the second effective region AA2. It can be done.

[0117] The four through holes located at the corners of the outermost contour of the second outer contour region OA2 may have a different shape from the through holes included in the second effective region AA2. It can have a different shape from the through holes included in the second effective region AA2.

[0118] For example, the four edge holes EH located at the corners of the outermost contour of the second outer contour region OA2 may be circular. Here, the circular shape can mean a shape that includes a curved surface as a whole. It can be circular. Here, the circular shape can mean a shape that includes a curved surface as a whole. The edge holes EH included in the second outer contour region OA2 can include a shape corresponding to the edge holes EH included in the first outer contour region OA1. It can include a shape corresponding to the edge holes EH included in the first outer contour region OA1.

[0119] For example, the through holes included in the second effective region AA2 can be square. The through holes included in the second effective region AA2 can include a shape corresponding to the through holes included in the first effective region AA1. The through holes included in the second effective region AA2 can include a shape corresponding to the through holes included in the first effective region AA1. It can include a shape corresponding to the through holes included in the first effective region AA1.

[0120] The third effective region AA3 can be included within the third outer contour region OA3. The third effective region AA3 can include a plurality of through holes for forming a deposited material. The third outer contour region OA3 surrounding the outer contour of the third effective region AA3 can include a plurality of through holes. The third effective region AA3 can include a plurality of through holes for forming a deposited material. The third outer contour region OA3 surrounding the outer contour of the third effective region AA3 can include a plurality of through holes.

[0121] The third effective region AA3 can have a shape corresponding to that of the first effective region AA1. The third outer contour region OA3 can have a shape corresponding to that of the first outer contour region OA1. The third outer contour region OA3 can have a shape corresponding to that of the first outer contour region OA1. It can be.

[0122] The third outer contour region OA3 is formed by water from the through holes located at the outermost contour of the third effective region AA3. It can further include two through holes in the horizontal direction and the vertical direction respectively. For example, the third outer region OA3 may have two through holes arranged in a row horizontally at the upper and lower positions of the through hole located at the outermost contour of the third effective region AA3. For example, the third outer region OA3 may have two through holes arranged in a row vertically on the left and right sides of the through hole located at the outermost contour of the third effective region AA3. The plurality of through holes included in the third outer region OA3 are for reducing the etching defect of the through hole located at the outermost contour of the effective region. Accordingly, the vapor deposition mask according to the embodiment can improve the uniformity of the plurality of through holes located in the effective region, and thereby improve the quality of the vapor deposition pattern manufactured through this. The set of through holes in the third outer region OA3 with one through hole located at the upper and lower positions of the outermost contour of the third effective region AA3 arranged in a row horizontally may have a shape corresponding to the through holes in the third effective region AA3. Also, the set of through holes in the third outer region OA3 with one through hole located at the left and right sides of the outermost contour of the third effective region AA3 arranged in a row vertically may have a shape corresponding to the through holes in the third effective region AA3. Accordingly, the uniformity of the through holes included in the third effective region AA3 can be improved.

[0123] The four through holes located at the corners of the outermost contour of the third outer region OA3 may have a shape different from that of the through holes included in the third effective region A A3. For example, the four edge holes EH located at the corners of the outermost contour of the third outer region OA3 are

[0124]

[0125] ​​​​​​​​It can be circular. Here, the circular shape can mean a shape that wholly includes a curved surface. The edge hole EH included in the third outer contour region OA3 can include a shape corresponding to the edge hole EH included in the first outer contour region OA1.

[0126] For example, the through hole included in the third effective region AA3 can be square. The through hole included in the third effective region AA3 can include a shape corresponding to the through hole included in the first effective region AA1.

[0127] Figs. 8 and 9 are diagrams showing a plan view of the effective region of the vapor deposition mask. Figs. 8 and 9 are a plan view of any one of the first effective region AA1, the second effective region AA2, and the third effective region AA3. Figs. 8 and 9 are for explaining the arrangement of the through holes, and it goes without saying that the vapor deposition mask according to the embodiment is not limited to the number of through holes in the drawings.

[0128] The vapor deposition mask 100 can include a plurality of through holes. The plurality of through holes shown in Figs. 8 and 9 can be those showing the second surface hole V2. When measuring the horizontal diameter Cx and the vertical diameter Cy of a reference hole which is any one of the through holes, the deviation between each of the horizontal diameters Cx between the holes (a total of 6 in the shown figure) in contact with the reference hole and the deviation between the vertical diameters Cy can be embodied at 2% to 10%. That is, when the size deviation between adjacent holes of one reference hole is embodied at 2% to 10%, the uniformity of vapor deposition can be ensured.

[0129] For example, the size deviation between the reference hole and the adjacent hole can be 4% to 9%. For example, Then, the size deviation between the reference hole and the adjacent hole can be 5% to 7%. For example, the size deviation between the reference hole and the adjacent hole can be 2% to 5%.

[0130] When the size deviation between the reference hole and the adjacent hole is less than 2%, the occurrence rate of moiré in the OLED panel after evaporation can be high. When the size deviation between the reference hole and the adjacent hole exceeds 10 %, the occurrence rate of color unevenness in the OLED panel after evaporation can be high. %

[0131] The average deviation of the through-hole diameter can be ±5 μm. For example, the average deviation of the through-hole diameter can be ±3 μm. In the embodiment, by making the size deviation between the reference hole and the adjacent hole within ±3 μ m, the evaporation efficiency can be improved.

[0132] The through-holes can be arranged in a row or intersect with each other depending on the direction.

[0133] For example, referring to FIG. 8, the through-holes can be arranged in a row along the vertical axis and arranged in a row along the horizontal axis .

[0134] For example, referring to FIG. 9, the through-holes can be arranged in a row along the vertical axis and intersect with each other along the horizontal axis .

[0135] Or, the through-holes can intersect with each other along the vertical axis and be arranged in a row along the horizontal axis, which goes without saying.

[0136] The through-hole may have a first diameter Cx measured in the horizontal direction and a second diameter Cy measured in the vertical direction that correspond to each other or are different from each other. The through-hole has a third diameter measured in the first diagonal direction corresponding to the cross-section direction of A-A', and a second diagonal direction that intersects the first diagonal direction The fourth diameters measured in the diagonal direction may correspond to each other or may be different from each other. The through through holes may be rounded.

[0137] Hereinafter, the vapor deposition mask according to the first embodiment will be described with reference to FIGS. 10 to 15.

[0138] FIG. 10 is an enlarged view of a cross section of a plurality of through holes of the vapor deposition mask according to the first embodiment.

[0139] The metal plate included in the vapor deposition mask according to the embodiment includes a base metal plate including a first surface and a second surface facing each other; a first surface layer disposed on the first surface; and a second surface layer disposed on the second surface. The first surface layer and the second surface layer may include elements different from those of the base metal plate or may have different element contents. Through this, the etching rate of the base metal plate may be different from the etching rates of the first surface layer and the second surface layer. The first surface layer and the second surface layer may each be a metal surface layer. The vapor deposition mask according to the embodiment includes a base metal plate; a first surface layer disposed on the first surface of the base metal plate; and a second surface layer disposed on a second surface facing the first surface of the metal layer. The first surface layer and the second surface layer may include elements different from those of the base metal plate or may have different element contents. Through this, the etching rate of the base metal plate may be different from the etching rates of the first surface layer and the second surface layer. The vapor deposition mask according to the embodiment may include a plurality of through holes including a first through hole and a second through hole that penetrate the base metal plate, the first surface layer, and the second surface layer and communicate with each other. 2 surface layer, and the first surface layer and the second surface layer are different from the base metal plate in terms of the elements they contain or may have different element contents. Through this, the etching rate of the base metal plate can be different from the etching rates of the first surface layer and the second surface layer. The first surface layer and the second surface layer may each be a metal surface layer.

[0140] The vapor deposition mask according to the embodiment includes a base metal plate; a first surface layer disposed on the first surface of the base metal plate; and a second surface layer disposed on the second surface facing the first surface of the metal layer. The first surface layer and the second surface layer may include elements different from those of the base metal plate or may have different element contents. Through this, the etching rate of the base metal plate can be different from the etching rates of the first surface layer and the second surface layer. The vapor deposition mask according to the embodiment includes a plurality of through holes that penetrate the base metal plate, the first surface layer, and the second surface layer and communicate with each other. The vapor deposition mask according to the embodiment includes a base metal plate, a first surface layer, and a second surface layer, and may include a plurality of through holes including a first through hole and a second through hole that penetrate the base metal plate, the first surface layer, and the second surface layer and communicate with each other. The first surface layer and the second surface layer may include elements different from those of the base metal plate or may have different element contents. Through this, the etching rate of the base metal plate can be different from the etching rates of the first surface layer and the second surface layer. According to the embodiment The vapor deposition mask may include a plurality of through holes including a first through hole and a second through hole that penetrate the base metal plate, the first surface layer, and the second surface layer and communicate with each other. The vapor deposition mask according to the embodiment may include a plurality of through holes including a first through hole and a second through hole that penetrate the base metal plate, the first surface layer, and the second surface layer and communicate with each other. The mask includes a bridge region between each through hole, and the first surface layer or the second surface layer can be disposed on the bridge region.

[0141] The metal plate can include a central region including a plurality of through holes and an outer peripheral region located on the outer periphery of the central region. The central region is a region involved in patterning, and the outer peripheral region can be a region not involved in patterning. For example, the central region can be an effective region, and the outer peripheral region can be a region other than the effective region. The thickness of the first surface layer disposed in the central region corresponds to the thickness of the first surface layer disposed in the outer peripheral region, and the thickness of the second surface layer disposed in the central region corresponds to the thickness of the second surface layer disposed in the outer peripheral region and can be obtained. Referring to FIG. 10, the vapor deposition mask 100 can include a base metal plate 100a and a surface layer. For example, the vapor deposition mask 100 can include the base metal plate 100a, a first surface layer 110 disposed on a first surface 101 of the base metal plate 100a, and a second surface layer 120 disposed on a second surface 102 opposite to the first surface 101 and can be obtained. The base metal plate 100a can include a metal substance. The base metal plate 100 a can include a nickel alloy. For example, the base metal plate 100a can be an alloy of nickel and iron. At this time, nickel can be about 35 wt% to about 37 wt%, and the iron can be about 63 wt% to about 65 wt%. As an example, in the base metal plate 100a, nickel is about 35 wt% to about 37 wt%, and iron is about 63 wt%

[0142] Referring to FIG. 10, the vapor deposition mask 100 can include a base metal plate 100a and a surface layer. For example, the vapor deposition mask 100 can include the base metal plate 100a, a first surface layer 110 disposed on a first surface 101 of the base metal plate 100a, and a second surface layer 120 disposed on a second surface 102 opposite to the first surface 101 and can be obtained. For example, the vapor deposition mask 100 can include the base metal plate 100a, a first surface layer 110 disposed on a first surface 101 of the base metal plate 100a, and a second surface layer 120 disposed on a second surface 102 opposite to the first surface 101 The base metal plate 100a can include a metal substance. The base metal plate 100 a can include a nickel alloy. For example, the base metal plate 100a can be an alloy of nickel and iron. At this time, nickel can be about 35 wt% to about 37 wt%, and the iron can be about 63 wt% to about 65 wt%. As an example, in the base metal plate 100a, nickel is about 35 wt% to about 37 wt%, and iron is about 63 wt%

[0143] The base metal plate 100a can include a metal substance. The base metal plate 100 a can include a nickel alloy. For example, the base metal plate 100a can be an alloy of nickel and iron. At this time, nickel can be about 35 wt% to about 37 wt%, and the iron can be about 63 wt% to about 65 wt%. As an example, in the base metal plate 100a, nickel is about 35 wt% to about 37 wt%, and iron is about 63 wt% and can be obtained. For example, the base metal plate 100a can be an alloy of nickel and iron. At this time, nickel can be about 35 wt% to about 37 wt%, and the iron can be about 63 wt% to about 65 wt%. As an example, in the base metal plate 100a, nickel is about 35 wt% to about 37 wt%, and iron is about 63 wt% to about 65 wt%. As an example, in the base metal plate 100a, nickel is about 35 wt% to about 37 wt%, and iron is about 63 wt% to about 65 wt%. As an example, in the base metal plate 100a, nickel is about 35 wt% to about 37 wt%, and iron is about 63 wt% about 65% by weight, trace amounts of C, Si, S, P, Cr, Mo, Mn, Ti, Co, Cu, Fe , and can contain at least one or more of Ag, Nb, V, In, and Sb, and can contain Invar (Inva r). Here, the trace amount can mean 1% by weight or less . Specifically, here, the trace amount can mean 0.5% by weight or less. However , the base substrate 100a is not limited to this, and of course, it can contain various metal substances .

[0144] Nickel alloys such as the Invar have the advantage that the life of the evaporation mask can be increased because the coefficient of thermal expansion is small. However, nickel alloys such as Invar have the problem that uniform etching is difficult .

[0145] That is, nickel alloys such as Invar have a high etching rate at the initial stage of etching , so that the through holes may become larger on the side surface, and accordingly, the peeling of the photoresist layer may occur. Also, when etching Invar, the size of the through holes becomes larger , which may make it difficult to form through holes with a fine size. Also, the through holes may be formed unevenly , and the manufacturing yield of the evaporation mask may decrease .

[0146] Therefore, in the embodiment, a surface layer for surface modification that differs in components, content, crystal structure, and corrosion rate can be disposed on the surface of the base metal plate. Here, surface modification means a layer composed of various substances disposed on the surface in order to improve the etching factor . can be meant .

[0147] The metal plate for the evaporation mask of the embodiment blocks rapid etching on the surface of the base metal plate It can include a surface layer for the purpose. The surface layer may be an etching barrier layer with a slower etching rate than the base metal plate. The surface layer may have a different crystal plane and crystal structure from the base metal layer. For example, the surface layer may contain elements different from those of the base metal layer, resulting in different crystal planes and crystal structures from each other.

[0148] In the same corrosion environment, the surface layer may have a different corrosion potential from the base metal plate. For example, when treated with the same etching solution at the same temperature for the same period of time, the surface layer may have different corrosion currents or corrosion potentials from the base metal plate.

[0149] The base metal plate 100a can contain elements different from those of the first surface layer 110. Also, the base metal plate 100a can contain elements different from those of the second surface layer 120. That is, the first surface layer 110 and the second surface layer 120 can contain other elements not contained in the base metal plate 110a described above.

[0150] For example, the first surface layer 110 and the second surface layer 120 contain chromium (Cr), and the base metal plate 100a can contain elements other than chromium. The first surface layer 1 10 and the second surface layer 120 contain chromium (Cr), thereby making the corrosion rate on the surface of the metal plate slower than that of the surface of the base metal plate 100a.

[0151] Also, by forming the Cr content of the surface layer higher than the Cr content of the base metal plate, the corrosion rate on the surface of the metal plate can be made slower than that of the surface of the base metal plate 100a.

[0152] As an example, when the base metal plate 100a contains 36 wt% nickel and 64 wt% iron, i.e., it is a rare Invar, the first surface layer 110 and the second surface layer 120 can each be an alloy layer containing 0.01 to 24 wt% chromium (Cr). At this time, the first surface layer 110 and the second surface layer 120 each contain 1 to 24 wt% chromium (Cr) and 76 to 99 wt% nickel (Ni), or can contain 76 to 99 wt% nickel (Ni) and iron (Fe). At this time, the first surface layer 110 and the second surface layer 120 each contain chromium (Cr) in an amount of 1 to 24 wt%, contain 76 to 99 wt% nickel (Ni), or can contain 76 to 99 wt% nickel (Ni) and iron (Fe). For example, the first surface layer 110 and the second surface layer 120 contain titanium (Ti), and the

[0153] above-mentioned base metal plate 100a can contain elements other than titanium (Ti). By the first surface layer 110 and the second surface layer 120 containing titanium (Ti), the corrosion rate on the metal plate surface can be made slower than that of the surface of the base metal plate 100a. In addition, by forming the Ti content of the surface layer higher than the Ti content of the base metal plate, the corrosion rate on the metal plate surface can be made slower than that of the surface of the base metal plate 100a. For example, when the base metal plate 100a contains 36 wt% nickel and 64 wt% iron, i.e., it is a rare Invar, the first surface layer 110 and the second surface layer

[0154] 120 can each be an alloy layer containing 0.5 to 10 wt% titanium (Ti). At this time, the first surface layer 110 and the second surface layer 120 each contain 0.5 to 10 wt% titanium (Ti) and 90 to 99.5 wt% nickel (Ni), or can contain 90 to 99.5 wt% nickel (Ni) and iron (Fe).

[0155] As an example, when the base metal plate 100a contains 36 wt% nickel and 64 wt% iron, i.e., it is a rare Invar, the first surface layer 110 and the second surface layer 120 can each be an alloy layer containing 0.5 to 10 wt% titanium (Ti). At this time, the first surface layer 110 and the second surface layer 120 each contain 0.5 to 10 wt% titanium (Ti) and 90 to 99.5 wt% nickel (Ni), or can contain 90 to 99.5 wt% nickel (Ni) and iron (Fe). At this time, the first surface layer 110 and the second surface layer 120 each contain titanium (Ti) in an amount of 0.5 to 10 wt%, contain 90 to 99.5 wt% nickel (Ni), or can contain 90 to 99.5 wt% nickel (Ni) and iron (Fe).

[0156] For example, the first surface layer 110 and the second surface layer 120 contain manganese (Mn). The base metal plate 100a can contain elements other than manganese (Mn). The first surface layer 110 and the second surface layer 120 can contain an Mn-based alloy, thereby reducing the corrosion rate on the surface of the metal plate to be slower than that of the surface of the base metal plate 100a.

[0157] Also, by forming the Mn content of the surface layer to be higher than the Mn content of the base metal plate, the corrosion rate on the surface of the metal plate can be made slower than that of the surface of the base metal plate 100a.

[0158] For example, the first surface layer 110 and the second surface layer 120 contain molybdenum (Mo). The base metal plate 100a can contain elements other than molybdenum (Mo). The first surface layer 110 and the second surface layer 120 contain a Mo-based alloy, thereby reducing the corrosion rate on the surface of the metal plate to be slower than that of the surface of the base metal plate 100a.

[0159] Also, by forming the Mo content of the surface layer to be higher than the Mo content of the base metal plate, the corrosion rate on the surface of the metal plate can be made slower than that of the surface of the base metal plate 100a.

[0160] For example, the first surface layer 110 and the second surface layer 120 contain silver (Ag). The base metal plate 100a can contain elements other than silver (Ag). The first surface layer 1 10 and the second surface layer 120 contain an Ag-based alloy, thereby reducing the corrosion rate on the surface of the metal plate to be slower than that of the surface of the base metal plate 100a.​​​​

[0161] In addition, by forming the Ag content in the surface layer higher than the Ag content of the base metal plate, the corrosion rate on the surface of the metal plate can be made slower than the surface of the base metal plate 100a.

[0162] For example, the first surface layer 110 and the second surface layer 120 contain zinc (Zn), and the base metal plate 100a can contain elements other than zinc (Zn). By including a zinc (Zn)-based alloy in the first surface layer 110 and the second surface layer 120, the corrosion rate on the surface of the metal plate can be made slower than the surface of the base metal plate 100a.

[0163] In addition, by forming the Zn content in the surface layer higher than the Zn content of the base metal plate, the corrosion rate on the surface of the metal plate can be made slower than the surface of the base metal plate 100a.

[0164] For example, the first surface layer 110 and the second surface layer 120 contain nitrogen (N), and the base metal plate 100a can contain elements other than nitrogen (N). By including a nitrogen (N)-based alloy in the first surface layer 1 10 and the second surface layer 120, the corrosion rate on the surface of the metal plate can be made slower than the surface of the base metal plate 100a.

[0165] In addition, by forming the N content in the surface layer higher than the N content of the base metal plate, the corrosion rate on the surface of the metal plate can be made slower than the surface of the base metal plate 100a.

[0166] For example, the first surface layer 110 and the second surface layer 120 contain aluminum (Al), and the base metal plate 100a can contain elements other than aluminum (Al). This is the case. By including aluminum (Al)-based alloys in the first surface layer 110 and the second surface layer 120, the corrosion rate on the surface of the metal plate can be made slower than that of the surface of the base metal plate 100a.

[0167] Also, by forming the Al content in the surface layer higher than the Al content of the base metal plate, the corrosion rate on the surface of the metal plate can be made slower than that of the surface of the base metal plate 100a.

[0168] For example, the first surface layer 110 and the second surface layer 120 may contain an oxygen element. That is, the first surface layer 110 and the second surface layer 120 may be metal oxide layers. Specifically, the first surface layer 110 and the second surface layer 120 can contain at least one of iron oxide and nickel oxide as metal oxides. The oxygen content of the first surface layer 110 may be higher than the oxygen content of the base metal plate 100a. The oxygen content of the second surface layer 120 may be higher than the oxygen content of the base metal plate 100a. By the first surface layer 110 and the second surface layer 120 containing metal oxides, the corrosion rate on the surface of the metal plate can be made slower than that of the surface of the base metal plate 100a.

[0169] Also, by forming the O content in the surface layer higher than the O content of the base metal plate, the corrosion rate on the surface of the metal plate can be made slower than that of the surface of the base metal plate 100a.

[0170] In the embodiment, since the first surface layer 110 and the second surface layer 120 contain elements different from those of the base metal plate 110 a, the corrosion rates of the first and second surface layers are the base ​​​​​It can be slower than the sputtering metal plate. Along with this, the etching factor of the vapor deposition mask according to the example can be increased. Also, the vapor deposition mask according to the example can improve the vapor deposition efficiency of the R, G, and B patterns by uniformly forming a plurality of through holes. Here, the fact of containing mutually different elements can mean that the base metal plate 100a and the surface layer contain at least one other element, or even if all the elements are the same, it can mean containing an alloy with different contents. The composition of the elements contained in the base metal plate 100a and the first surface layer 110 can be mutually different. Also, the composition of the elements contained in the base metal plate 100a and the second surface layer 120 can be mutually different. That is, even when the first surface layer 110 and the second surface layer 120 contain the same elements as the constituent elements of the base metal plate 110a, the contents of the same elements can be mutually different. As an example, when the base metal plate 100a is Invar containing 36% by weight of nickel and 64% by weight of iron, even if the first surface layer 110 and the second surface layer 120 contain at least one of the elements nickel or iron, the contents of nickel or iron in the first surface layer 110 and the second surface layer 120 can be mutually different from those in the base metal plate 100a. The nitrogen content of the first surface layer 110 may be greater than or less than the nitrogen content of the base metal plate 100a. Also, the nitrogen content of the second surface layer 120 may be greater than or less than the nitrogen content of the base metal plate 100a. For example, The nitrogen content of the first surface layer 110 may be greater than or less than the nitrogen content of the base metal plate 100a. Also, the nitrogen content of the second surface layer 120 may be greater than or less than the nitrogen content of the base metal plate 100a. For example, The nitrogen content of the first surface layer 110 may be greater than or less than the nitrogen content of the base metal plate 100a. Also, the nitrogen content of the second surface layer 120 may be greater than or less than the nitrogen content of the base metal plate 100a. For example,

[0171] The composition of the elements contained in the base metal plate 100a and the first surface layer 110 can be mutually different. Also, the composition of the elements contained in the base metal plate 100a and the second surface layer 120 can be mutually different. That is, even when the first surface layer 110 and the second surface layer 120 contain the same elements as the constituent elements of the base metal plate 110a, the contents of the same elements can be mutually different. The composition of the elements contained in the base metal plate 100a and the first surface layer 110 can be mutually different. Also, the composition of the elements contained in the base metal plate 100a and the second surface layer 120 can be mutually different. That is, even when the first surface layer 110 and the second surface layer 120 contain the same elements as the constituent elements of the base metal plate 110a, the contents of the same elements can be mutually different. The composition of the elements contained in the base metal plate 100a and the first surface layer 110 can be mutually different. Also, the composition of the elements contained in the base metal plate 100a and the second surface layer 120 can be mutually different. That is, even when the first surface layer 110 and the second surface layer 120 contain the same elements as the constituent elements of the base metal plate 110a, the contents of the same elements can be mutually different. The composition of the elements contained in the base metal plate 100a and the first surface layer 110 can be mutually different. Also, the composition of the elements contained in the base metal plate 100a and the second surface layer 120 can be mutually different. That is, even when the first surface layer 110 and the second surface layer 120 contain the same elements as the constituent elements of the base metal plate 110a, the contents of the same elements can be mutually different. The composition of the elements contained in the base metal plate 100a and the first surface layer 110 can be mutually different. Also, the composition of the elements contained in the base metal plate 100a and the second surface layer 120 can be mutually different. That is, even when the first surface layer 110 and the second surface layer 120 contain the same elements as the constituent elements of the base metal plate 110a, the contents of the same elements can be mutually different.

[0172] As an example, when the base metal plate 100a is Invar containing 36% by weight of nickel and 64% by weight of iron, even if the first surface layer 110 and the second surface layer 120 contain at least one of the elements nickel or iron, the contents of nickel or iron in the first surface layer 110 and the second surface layer 120 can be mutually different from those in the base metal plate 100a. As an example, when the base metal plate 100a is Invar containing 36% by weight of nickel and 64% by weight of iron, even if the first surface layer 110 and the second surface layer 120 contain at least one of the elements nickel or iron, the contents of nickel or iron in the first surface layer 110 and the second surface layer 120 can be mutually different from those in the base metal plate 100a. As an example, when the base metal plate 100a is Invar containing 36% by weight of nickel and 64% by weight of iron, even if the first surface layer 110 and the second surface layer 120 contain at least one of the elements nickel or iron, the contents of nickel or iron in the first surface layer 110 and the second surface layer 120 can be mutually different from those in the base metal plate 100a. As an example, when the base metal plate 100a is Invar containing 36% by weight of nickel and 64% by weight of iron, even if the first surface layer 110 and the second surface layer 120 contain at least one of the elements nickel or iron, the contents of nickel or iron in the first surface layer 110 and the second surface layer 120 can be mutually different from those in the base metal plate 100a. As an example, when the base metal plate 100a is Invar containing 36% by weight of nickel and 64% by weight of iron, even if the first surface layer 110 and the second surface layer 120 contain at least one of the elements nickel or iron, the contents of nickel or iron in the first surface layer 110 and the second surface layer 120 can be mutually different from those in the base metal plate 100a.

[0173] The nitrogen content of the first surface layer 110 may be greater than or less than the nitrogen content of the base metal plate 100a. Also, the nitrogen content of the second surface layer 120 may be greater than or less than the nitrogen content of the base metal plate 100a. For example, The nitrogen content of the first surface layer 110 may be greater than or less than the nitrogen content of the base metal plate 100a. Also, the nitrogen content of the second surface layer 120 may be greater than or less than the nitrogen content of the base metal plate 100a. For example, The nitrogen content of the first surface layer 110 may be greater than or less than the nitrogen content of the base metal plate 100a. Also, the nitrogen content of the second surface layer 120 may be greater than or less than the nitrogen content of the base metal plate 100a. For example, then, the first surface layer 110 and the second surface layer 120 may contain a nitrogen (N) element. Specifically, each of the first surface layer 110 and the second surface layer 120 may be a nitrogen-based alloy containing 20 wt% to 70 wt% of the nitrogen (N) element.

[0174] The iron content of the first surface layer 110 may be greater than or less than the iron content of the base metal plate 100a. Also, the iron content of the second surface layer 120 may be greater than or less than the iron content of the base metal plate 100a. For example, the first surface layer 110 and the second surface layer 120 may contain an iron (Fe) element. Specifically, each of the first surface layer 110 and the second surface layer 120 may be an iron-based alloy containing 20 wt% to 70 wt% of the iron (Fe) element.

[0175] The first surface layer 110 and the second surface layer 120 may contain corresponding elements to each other. Here, "corresponding to each other" means that the content percentages of the constituent elements are the same, and of course, an error range due to tolerance can be included.

[0176] The first surface layer 110 and the second surface layer 120 may contain at least one metal of nickel (Ni), chromium (Cr), iron (Fe), titanium (Ti), manganese (Mn), oxygen (O), molybdenum (Mo), silver (Ag), zinc (Zn), nitrogen (N), aluminum (Al), and alloys thereof.

[0177] For example, the first surface layer 110 and the second surface layer 120 contain nickel (Ni), chromium (Cr), iron (Fe), titanium (Ti), manganese (Mn), oxygen (O), molybdenum (Mo), silver (Ag), zinc (Zn), nitrogen (N), aluminum (Al), and alloys thereof. Any one of molybdenum (Mo), silver (Ag), zinc (Zn), nitrogen (N), and aluminum (Al) can be included.

[0178] For example, the first surface layer 110 and the second surface layer 120 may be a binary alloy containing two of nickel (Ni), chromium (Cr), iron (Fe), titanium (Ti), manganese (Mn), oxygen (O), molybdenum (Mo), silver (Ag), zinc (Zn), nitrogen (N), and aluminum (Al). It can be a binary alloy.

[0179] For example, the first surface layer 110 and the second surface layer 120 may be a ternary alloy containing three of nickel (Ni), chromium (Cr), iron (Fe), titanium (Ti), manganese (Mn), oxygen (O), molybdenum (Mo), silver (Ag), zinc (Zn), nitrogen (N), and aluminum (Al). It can be a ternary alloy.

[0180] The thickness of the base metal plate 100a may be greater than that of the surface layer. For example , the thickness T1 of the base metal plate 100a may be greater than the thickness T2 of the first surface layer 110 and the thickness T3 of the second surface layer 120.

[0181] The thickness of the metal plate 100 can be 5 μm to 50 μm. For example, the thickness of the metal plate 10 0 can be 5 μm to 30 μm. Or it can be 10 μm to 25 μm. When the thickness of the metal plate 100 is less than 5 μm, the manufacturing efficiency may be low. When the thickness of the metal plate 100 exceeds 50 μm, the process efficiency for forming through holes

[0182] may decrease.

[0183] The thickness T1 of the base metal plate 100a can be 50 μm or less. For example, the thickness T1 of the base metal plate 100a can be 30 μm or less. Also, the thickness T1 of the base metal plate 100a can be 25 μm or less. Further, the thickness T1 of the base metal plate 100a can be 20 μm or less. The thickness T1 of the base metal plate 100a can be 30 μm or less. Also, the thickness T1 of the base metal plate 100a can be 25 μm or less. Further, the thickness T1 of the base metal plate 100a can be 20 μm or less. The thickness T1 of the base metal plate 100a can be 25 μm or less. Also, the thickness T1 of the base metal plate 100a can be 20 μm or less. The thickness T1 of the base metal plate 100a can be 20 μm or less.

[0184] The first surface layer 110 and the second surface layer 120 can have corresponding thicknesses. Here, "corresponding" can include an error due to a tolerance. The thickness T2 of the first surface layer 110 can be from 0.5 nm to 1000 nm. For example, the thickness T2 of the first surface layer 110 can be from 5 nm to 850 nm. The thickness T2 of the first surface layer 110 can be from 0.5 nm to 1000 nm. For example, the thickness T2 of the first surface layer 110 can be from 5 nm to 850 nm. The thickness T2 of the first surface layer 110 can be from 5 nm to 850 nm.

[0185] When the thickness T2 of the first surface layer 110 is less than 0.5 nm, the uniformity of the through holes decreases due to a reduction in the etching rate reduction effect on the first surface 101. Also, a natural oxide film of 5 nm or less may be formed. When the thickness T2 of the first surface layer 110 is less than 0.5 nm, the uniformity of the through holes decreases due to a reduction in the etching rate reduction effect on the first surface 101. Also, a natural oxide film of 5 nm or less may be formed. When the thickness T2 of the first surface layer 110 is less than 0.5 nm, the uniformity of the through holes decreases due to a reduction in the etching rate reduction effect on the first surface 101. Also, a natural oxide film of 5 nm or less may be formed.

[0186] For example, when the thickness T2 of the first surface layer 110 is less than 0.5 nm, through holes with large deviations in thickness and / or width are formed, resulting in a non-uniform pattern formed by the metal plate having the through holes, and the manufacturing efficiency of the display device may decrease. For example, when the thickness T2 of the first surface layer 110 is less than 0.5 nm, through holes with large deviations in thickness and / or width are formed, resulting in a non-uniform pattern formed by the metal plate having the through holes, and the manufacturing efficiency of the display device may decrease. For example, when the thickness T2 of the first surface layer 110 is less than 0.5 nm, through holes with large deviations in thickness and / or width are formed, resulting in a non-uniform pattern formed by the metal plate having the through holes, and the manufacturing efficiency of the display device may decrease. For example, when the thickness T2 of the first surface layer 110 is less than 0.5 nm, through holes with large deviations in thickness and / or width are formed, resulting in a non-uniform pattern formed by the metal plate having the through holes, and the manufacturing efficiency of the display device may decrease.

[0187] Also, when the thickness T2 of the first surface layer 110 is less than 0.5 nm, the formation of fine-sized through holes may become difficult due to a reduction in the etching rate reduction effect on the first surface 101. Also, when the thickness T2 of the first surface layer 110 is less than 0.5 nm, the formation of fine-sized through holes may become difficult due to a reduction in the etching rate reduction effect on the first surface 101. Also, when the thickness T2 of the first surface layer 110 is less than 0.5 nm, the formation of fine-sized through holes may become difficult due to a reduction in the etching rate reduction effect on the first surface 101.

[0188] Also, when the thickness T2 of the first surface layer 110 is less than 0.5 nm, the first surface hole V1 An increase in the surface roughness of the inner circumferential surface may reduce the quality of the vapor deposition pattern formed through the first hole V1, thereby possibly reducing the process efficiency. On the other hand, when the thickness T2 of the first surface layer 110 exceeds 1000 nm, the manufacturing efficiency may be lowered.

[0189] On the other hand, when the thickness T2 of the first surface layer 110 exceeds 1000 nm, the manufacturing efficiency may be lowered. On the other hand, when the thickness T2 of the first surface layer 110 exceeds 1000 nm, the manufacturing efficiency may be lowered.

[0190] The thickness T3 of the second surface layer 120 can be from 0.5 nm to 1000 nm. For example, the thickness T3 of the second surface layer 120 can be from 30 nm to 500 nm. For example, the thickness T3 of the second surface layer 120 can be from 30 nm to 500 nm.

[0191] When the thickness T3 of the second surface layer 120 is less than 0.5 nm, the reduction effect of the etching rate on the second surface 102 decreases, which may reduce the uniformity of the through holes. For example, when the thickness T3 of the second surface layer 120 is less than 0.5 nm, through holes with large deviations in thickness and / or width are formed, so that the pattern formed by the metal plate having the through holes may not be uniform, and the manufacturing efficiency of the display device may be reduced. For example, when the thickness T3 of the second surface layer 120 is less than 0.5 nm, through holes with large deviations in thickness and / or width are formed, so that the pattern formed by the metal plate having the through holes may not be uniform, and the manufacturing efficiency of the display device may be reduced. For example, when the thickness T3 of the second surface layer 120 is less than 0.5 nm, through holes with large deviations in thickness and / or width are formed, so that the pattern formed by the metal plate having the through holes may not be uniform, and the manufacturing efficiency of the display device may be reduced. For example, when the thickness T3 of the second surface layer 120 is less than 0.5 nm, through holes with large deviations in thickness and / or width are formed, so that the pattern formed by the metal plate having the through holes may not be uniform, and the manufacturing efficiency of the display device may be reduced. For example, when the thickness T3 of the second surface layer 120 is less than 0.5 nm, through holes with large deviations in thickness and / or width are formed, so that the pattern formed by the metal plate having the through holes may not be uniform, and the manufacturing efficiency of the display device may be reduced.

[0192] Also, when the thickness T3 of the second surface layer 120 is less than 0.5 nm, the reduction effect of the etching rate on the second surface 102 decreases, making it difficult to form through holes with a fine size. Also, when the thickness T3 of the second surface layer 120 is less than 0.5 nm, the reduction effect of the etching rate on the second surface 102 decreases, making it difficult to form through holes with a fine size. Also, when the thickness T3 of the second surface layer 120 is less than 0.5 nm, the reduction effect of the etching rate on the second surface 102 decreases, making it difficult to form through holes with a fine size.

[0193] Also, when the thickness T3 of the second surface layer 120 is less than 0.5 nm, the surface roughness of the inner circumferential surface of the second hole V2 may increase. Also, when the thickness T3 of the second surface layer 120 is less than 0.5 nm, the surface roughness of the inner circumferential surface of the second hole V2 may increase.

[0194] On the other hand, when the thickness T3 of the second surface layer 120 exceeds 1000 nm, the manufacturing efficiency may be lowered. On the other hand, when the thickness T3 of the second surface layer 120 exceeds 1000 nm, the manufacturing efficiency may be lowered.

[0195] The metal plate 100 may have different widths of the through holes depending on the thickness direction of the through holes. For example, the width W1 of the first surface hole V1 may be larger than the width W3 of the connecting portion CA. Specifically, the width of the through hole of the first surface hole V1 may decrease as it goes from the first surface 101 toward the connecting portion CA. More specifically, the width of the through hole of the first surface hole V1 may gradually decrease as it goes from the first surface 10 1 toward the connecting portion CA.

[0196] For example, the width W2 of the second surface hole V2 may be larger than the width W3 of the connecting portion CA. Specifically, the width of the through hole of the second surface hole V2 may decrease as it goes from the second surface 102 toward the connecting portion CA. More specifically, the width of the through hole of the second surface hole V2 may gradually decrease as it goes from the second surface 1 02 toward the connecting portion CA.

[0197] The vapor deposition mask according to the embodiment may include a plurality of through holes. Specifically, the metal plate may include a central region including a plurality of through holes and an outer peripheral region located in the central region. At this time, the width of one through hole may be 20 μm or more. For example, the width of the through hole may be 20 μm to 40 μm. For example, at least one of the width W1 of the first surface hole and the width W2 of the second surface hole may have a width of 20 μm or more. For example, at least one of the width W1 of the first surface hole and the width W2 of the second surface hole may have a width of 20 μm to 40 μm.

[0198] When the width of the through hole exceeds 40 μm, it may be difficult to form a fine vapor deposition pattern.

[0199] ​​ The plurality of through holes may include a first through hole and a second through hole adjacent to the first through hole. A metal plate located between the first through hole and the second through hole can be defined as a bridge region B R. The bridge region BR can be disposed in the central region.

[0200] The thickness of the first surface layer disposed in the central region may correspond to the thickness of the first surface layer disposed in the outer peripheral region.

[0201] The thickness of the second surface layer disposed in the central region may correspond to the thickness of the second surface layer disposed in the outer peripheral region.

[0202] The first surface of the metal plate includes a first bridge region BR1, and the second surface opposite to the first surface can include a second bridge region BR2.

[0203] In the bridge region, a metal plate, a first surface layer disposed on the first surface of the metal plate, and a second surface layer disposed on the second surface of the metal plate may be disposed.

[0204] In the outer peripheral region of the metal plate, a metal plate, a first surface layer disposed on the first surface of the metal plate, and a second surface layer disposed on the second surface of the metal plate may be disposed.

[0205] The through hole may be formed by penetrating the base metal plate, the first surface layer, and the second surface layer. Accordingly, the base metal plate, the first surface layer, and the second surface layer can be exposed on the inner surface of the through hole.

[0206] The inner surface of the through hole can include a curved surface. The inner surface of the through hole may be entirely or It can partially include a curved surface. The inner surface of the through hole can include a curved surface with a changing curvature. On the inner surface of the through hole, the curvatures of the base metal plate, the first surface layer, and the second surface layer can be different from each other. At this time, the curvatures of the base metal plate, the first surface layer, and the second surface layer respectively mean that they are measured at the midpoint of the base metal plate thickness, the midpoint of the first surface layer thickness, and the midpoint of the second surface layer thickness.

[0207] The height H2 of the second through hole V2 may be larger than the height H1 of the first through hole V1.

[0208] On the other hand, adjacent to the first through hole V1, the third through hole V3 formed on the first surface 101 communicates with the fourth through hole V4 formed on the second surface 102 adjacent to the second through hole V1 through the connection part CA, thereby forming a through hole.

[0209] The width W5 of the fourth through hole V4 may be larger than the width W4 of the third through hole V3. For example, the width W4 of the third through hole V3 may be larger than the width W6 of the connection part CA. Specifically, the width of the through hole of the third through hole V3 may decrease as it goes from the first surface 101 towards the connection part CA. Specifically, the width of the through hole of the third through hole V3 may gradually decrease as it goes from the first surface 101 towards the connection part CA.

[0210] For example, the width W5 of the fourth through hole V4 may be larger than the width W6 of the connection part CA. Specifically, the width of the through hole of the fourth through hole V4 may decrease as it goes from the second surface 102 towards the connection part CA. More specifically, the fourth through hole V4 from the second surface 1 The width of the through hole may gradually decrease as going from 02 toward the connecting portion CA.

[0211] The height H4 of the fourth hole surface V4 may be larger than the height H3 of the third hole surface V3.

[0212] The etching rate of the base metal plate 100a may be different from the etching rates of the first surface layer 110 and the second surface layer 120. For example, the etching rate of the base metal plate 100a located inside in the thickness direction of the metal plate may be faster than the etching rates of the first and second surface layers 110, 120 located outside in the thickness direction of the metal plate. That is, the etching rate of the first surface layer 110 may be slower than the etching rate of the base metal plate 100a. The etching rate of the second surface layer 120 may be slower than the etching rate of the base metal plate 100a. Specifically, since the first surface layer 110 and the second surface layer 120 can contain elements having higher corrosion resistance than the constituent elements of the base metal plate 110a, the etching rate at the surface layer can be made slower than the etching rate at the base metal plate. That is, the surface layer may be a metal surface layer containing a metal element having higher corrosion resistance than the constituent elements of the base metal plate.

[0213] In a general metal plate, there is a problem that adjacent through holes may overlap because the etching rate outside the metal plate with a large contact area of the etching solution is faster than the etching rate inside the metal plate. That is, for a vapor deposition mask manufactured only with the base metal plate 100a, the etching rates of the first surface 101 and the second surface 102 of the base metal plate 100a in contact with the etching solution ​​​​​​​​​​​​Due to the high speed, the width of the through holes formed on the first surface 101 and the second surface 102 can be large. Accordingly, it is difficult to form through holes having fine patterns, and the manufacturing yield may decrease. Also, the uniformity of a plurality of through holes may decrease. Therefore, the OLED panel manufactured through this may have low evaporation efficiency of the pattern and the evaporation uniformity of the pattern may decrease.

[0214] On the other hand, in the embodiment, the first surface layer 110 and the second surface layer 120 are included on both surfaces of the base metal plate 100a, and the first surface layer 110 and the second surface layer 120 may include elements different from those of the base metal plate 100a. Accordingly, the etching rate of the first surface layer 110 and the second surface layer 120 may be slower than the etching rate of the base metal plate 100a.

[0215] That is, the first surface layer 110 and the second surface layer 120 may include a metal element or a metal oxide having greater corrosion resistance than the base metal plate 100a, and by disposing the first surface layer 1 10 and the second surface layer 120 at thicknesses of 0.5 nm to 1000 nm, respectively, fine through holes can be formed.

[0216] For example, in the metal plate according to the embodiment, when the first surface layer 110 and the second surface layer 120 are respectively disposed at thicknesses exceeding 5 nm and less than or equal to 800 nm, 10 nm to 600 nm, and 30 nm to 500 nm, the width W1 of the first through hole V1 and the width W4 of the third through hole V3 may correspond, and the width W2 of the second through hole V2 and the width W5 of the fourth , the metal plate according to the embodiment is such that the first surface layer 110 and the second surface layer 120 each have a thickness of more than 5 nm and not more than 800 nm, 10 nm to 600 nm, 30 nm to 500 nm When arranged, the height H1 of the first through-hole V1 and the height H3 of the third through-hole V3 can correspond , and the height H2 of the second through-hole V2 and the height H4 of the fourth through-hole V4 can correspond. That is, The uniformity of the width and height of the plurality of through-holes can be improved.

[0217] That is, in the metal plate according to the embodiment, the etching rate may be slow in the region where the first surface layer 110 and the second surface layer 120 are arranged, and the through-hole can be formed to have a small width and a deep thickness. Accordingly, the peeling phenomenon of the photoresist layer that may occur due to fast etching on the metal surface can be prevented.

[0218] Also, the metal plate used for manufacturing the vapor deposition mask according to the embodiment can control the etching rate on the surface, improve the manufacturing yield of through-holes having a fine pattern, and improve the uniformity of the plurality of through-holes. Accordingly, the OLED panel manufactured with such a vapor deposition mask is excellent in the vapor deposition efficiency per turn and the vapor deposition uniformity can be improved. Further, the surface layer according to the embodiment contains at least one of a metal or a metal oxide having high corrosion resistance, so that the adhesion of the photoresist layer can be improved, and the peeling or separation of the photoresist layer in the etching process can be prevented. Accordingly, the manufacturing yield and the process efficiency of the plurality of through-holes of the metal plate according to the embodiment can be improved.

[0219] Referring to FIGS. 11 to 15, the manufacturing process of the vapor deposition mask according to the first embodiment will be described.

[0220] The vapor deposition mask according to the embodiment includes a step of preparing a base metal plate; a first surface of the base metal plate a step of disposing a first surface layer thereon; a step of disposing a second surface layer on a second surface of the base metal plate a step of forming a first photoresist layer on the first surface layer and a second photoresist layer on the second surface layer; a first hole on the first surface and the etching step of forming a through hole in which the second hole on the second surface communicates with each other can be included . Further, the metal plate used for the vapor deposition mask according to the embodiment may further include a step of removing the first photoresist layer and the second photoresist layer after the etching step .

[0221] In addition, the first surface layer and the second surface layer can be formed simultaneously. Along with this , the process efficiency can be improved. Also, the first photoresist layer and the second photoresist layer can of course be formed step by step

[0222] In addition, the first hole and the second hole can be formed step by step to form a through hole .

[0223] In addition, after forming a first photoresist for forming a first hole to form an etching prevention protection layer on the second surface, the first hole is formed, and a photoresist for forming a second hole is formed and after forming an etching prevention protection layer on the first surface, the second hole can be formed

[0224] In addition, after the step of removing the photoresist layer, a step of removing the first and second surface layers can be further included . Through this, the abnormalities generated by the surface layer during OLED vapor deposition ​​In such a case, the Ni content of the first surface from which the surface layer has been removed and The Ni content in the center, which is half the thickness of the base metal plate, may be different. The Ni content at the center of the base metal plate may be greater than the Ni content at the center, which is half the thickness of the base metal plate. do.

[0225] The first step is to prepare a base metal plate 100a. The plate 100a can be made of a nickel alloy. For example, the base metal plate 100 a may be an alloy of nickel and iron.

[0226] In addition, impurities can be included to improve strength. The impurities include C, Si, Mn, At least one of P, S, Al, and Cr may be included, and the 2w of the entire base metal plate %, 1.7w% or less, 1.5w% or less. If it exceeds 2w%, the Invar The basic thermal expansion characteristics may deteriorate.

[0227] The base metal plate preparation step may include various thickness reduction steps. For example, the base metal plate may further include a thickness reduction step by rolling. Cut.

[0228] That is, the second step may be a rolling step of the base metal plate 100a. Referring to FIG. 11, the base metal plate 100a has a thickness T1 of 5 μm to 50 μm. For example, the base metal plate 100a may have a thickness T1 of 30 μm or less. Here, the thickness of the base metal plate 100a may be a thickness measured after a rolling process. In this case, the rolling process may be a cold rolling process. That is, the initial metal substrate is 30 μm Base metal having an excessive thickness and processed by a thickness reduction step in a rolling step The plate may have a thickness of 30 μm or less (for example, 25 μm, 20 μm).

[0229] The third step is a step of disposing a first surface layer on the first surface of the base metal plate .

[0230] The fourth step is a step of disposing a second surface layer on the second surface of the base metal plate .

[0231] Referring to FIG. 12, the first and second surface layers 110, 12 0 can be formed on the base metal plate 100a. For example, the base metal plate 100a can be formed by a vapor deposition process The first surface layer 110 can be formed on one surface of the base metal plate 100a. Then The second surface layer 120 can be formed by a vapor deposition process on the other surface of the base metal plate 100a opposite to the one surface .

[0232] Also, the first surface layer and the second surface layer can be vapor deposited together.

[0233] Also, the first surface layer 110 and the second surface layer 120 can be disposed on the base metal plate 100a with corresponding thicknesses to each other, and may reduce the etching rates of the first surface 1 01 and the second surface 102 of the base metal plate 100a. .

[0234] The fifth step is a photoresist layer forming step of disposing a first photoresist layer P1 on the first surface layer 110 and disposing a second photoresist layer P2 on the second surface layer 120 . Referring to FIG. 13, the first photoresist layer having an open region on the first surface layer 110 . A resist layer P1 is disposed, and a second photoresist layer P2 having an open region on the second surface layer 120 can be disposed. Specifically, a photoresist material can be coated on each of the first surface layer 110 and the second surface layer 120, and the first photoresist layer P1 and the second photoresist layer P2 can be disposed respectively by an exposure and development process.

[0235] By arranging the widths of the open regions of the first photoresist layer P1 and the second photoresist layer P2 to be different, the width of the first through-hole V1 formed on the first surface 101 and the width of the second through-hole V2 formed on the second surface 102 can be different.

[0236] The first photoresist layer P1 and the second photoresist layer P2 can include a plurality of open regions for forming through-holes in the metal plate.

[0237] The sixth step is a step of forming through-holes in the metal plate.

[0238] On the first surface layer 110, the first photoresist layer P1 can be partially disposed. In the region where the first photoresist layer P1 is disposed on the first surface layer 110, through-holes may not be formed. That is, the first photoresist layer P1 can include a substance that can maintain physical / chemical safety in an etching process. Accordingly, the first photoresist layer P1 can prevent etching of the first surface layer 110 and the base metal plate 100a disposed below the first photoresist layer P1.

[0239] On the second surface layer 120, the second photoresist layer P2 can be partially disposed.​​​​​​​​​​​​ . In the region where the second photoresist layer P2 is disposed on the second surface layer 120, through holes may not be formed. That is, the second photoresist layer P2 may contain a substance that can maintain physical / chemical safety in the etching process. Accordingly, the second photoresist layer P2 described above can prevent etching of the second surface layer 120 and the base metal plate 100a disposed below the second photoresist layer P2. On the other hand, etching can be performed in the open regions of the first photoresist layer P1 and the second photoresist layer P2 in the etching process. Accordingly, through holes of the metal plate can be formed in the open regions of the first photoresist layer P1 and the second photoresist layer P2. Also, after forming the first photoresist for forming the first through hole and forming the etching prevention protection layer on the second surface, the first through hole can be formed, and after forming the photoresist for forming the second through hole and forming the etching prevention protection layer on the first surface, the second through hole can be formed. Referring to FIG. 14, the first through hole V1 is formed on the first surface of the metal plate by the etching process, the second through hole V2 is formed on the second surface opposite to the first surface, and the through hole can be formed by communicating the first through hole V1 and the second through hole V2 by the connecting portion CA. For example, the etching process can be performed by a wet etching process. Accordingly, the first surface 101 and the second surface 102 can be etched simultaneously, and the process

[0240] In the region where the second photoresist layer P2 is disposed on the second surface layer 120, through holes may not be formed. That is, the second photoresist layer P2 may contain a substance that can maintain physical / chemical safety in the etching process. Accordingly, the second photoresist layer P2 described above can prevent etching of the second surface layer 120 and the base metal plate 100a disposed below the second photoresist layer P2. On the other hand, etching can be performed in the open regions of the first photoresist layer P1 and the second photoresist layer P2 in the etching process. Accordingly, through holes of the metal plate can be formed in the open regions of the first photoresist layer P1 and the second photoresist layer P2. Also, after forming the first photoresist for forming the first through hole and forming the etching prevention protection layer on the second surface, the first through hole can be formed, and after forming the photoresist for forming the second through hole and forming the etching prevention protection layer on the first surface, the second through hole can be formed. Referring to FIG. 14, the first through hole V1 is formed on the first surface of the metal plate by the etching process, the second through hole V2 is formed on the second surface opposite to the first surface, and the through hole can be formed by communicating the first through hole V1 and the second through hole V2 by the connecting portion CA.

[0241] In the region where the second photoresist layer P2 is disposed on the second surface layer 120, through holes may not be formed. That is, the second photoresist layer P2 may contain a substance that can maintain physical / chemical safety in the etching process. Accordingly, the second photoresist layer P2 described above can prevent etching of the second surface layer 120 and the base metal plate 100a disposed below the second photoresist layer P2. On the other hand, etching can be performed in the open regions of the first photoresist layer P1 and the second photoresist layer P2 in the etching process. Accordingly, through holes of the metal plate can be formed in the open regions of the first photoresist layer P1 and the second photoresist layer P2. Also, after forming the first photoresist for forming the first through hole and forming the etching prevention protection layer on the second surface, the first through hole can be formed, and after forming the photoresist for forming the second through hole and forming the etching prevention protection layer on the first surface, the second through hole can be formed.

[0242] Referring to FIG. 14, the first through hole V1 is formed on the first surface of the metal plate by the etching process, the second through hole V2 is formed on the second surface opposite to the first surface, and the through hole can be formed by communicating the first through hole V1 and the second through hole V2 by the connecting portion CA. For example, the etching process can be performed by a wet etching process. Accordingly, the first surface 101 and the second surface 102 can be etched simultaneously, and the process In the region where the second photoresist layer P2 is disposed on the second surface layer 120, through holes may not be formed. That is, the second photoresist layer P2 may contain a substance that can maintain physical / chemical safety in the etching process. Accordingly, the second photoresist layer P2 described above can prevent etching of the second surface layer 120 and the base metal plate 100a disposed below the second photoresist layer P2. On the other hand, etching can be performed in the open regions of the first photoresist layer P1 and the second photoresist layer P2 in the etching process. Accordingly, through holes of the metal plate can be formed in the open regions of the first photoresist layer P1 and the second photoresist layer P2.

[0243] Also, after forming the first photoresist for forming the first through hole and forming the etching prevention protection layer on the second surface, the first through hole can be formed, and after forming the photoresist for forming the second through hole and forming the etching prevention protection layer on the first surface, the second through hole can be formed. Referring to FIG. 14, the first through hole V1 is formed on the first surface of the metal plate by the etching process, the second through hole V2 is formed on the second surface opposite to the first surface, and the through hole can be formed by communicating the first through hole V1 and the second through hole V2 by the connecting portion CA. As an example, the wet etching process may be an etching process including iron chloride. The etching can be performed at about 45° C. using an etching solution of FeCl 3 35 In particular, the etching solution may contain FeCl 3 A36 weight %. For example, FeCl 3 The specific gravity of the etching solution containing 43% by weight of At 20°C it can be 1.47. 3 The specific gravity of the etching solution containing 41% by weight of At 20°C it can be 1.44. 3 The specific gravity of the etching solution containing 38% by weight of At 20° C., the viscosity may be 1.39. However, the embodiment is not limited thereto, and etching of the metal surface layer may be performed. Various etch rates can be made slower than the etching rate of the base metal plate. Of course, a coating liquid can be used.

[0244] The seventh step is a step of removing the first photoresist layer and the second photoresist layer. Referring to FIG. 15, the first photoresist layer P1 and the second photoresist layer P2 are By removing the resist layer P2, the first surface layer 110 and the A second surface layer 120 may be disposed to form a metal plate having a plurality of through holes.

[0245] In the above step, at least one of the first surface hole and the second surface hole is calculated by the following formula 1: The etching factor of the other surface hole can be 2.5 or more. The through holes have excellent etching properties and prevent the production yield from being reduced due to peeling or separation of the photoresist layer. It is possible to prevent the bottom from falling out.

[0246] <Expression 1> Etching Factor = B / A

[0247] In the above formula, B is one of the first and second hole surfaces that have been etched the depth of the hole, and A is the width of the photoresist layer extending from the bridge region on the one hole surface and protruding in the central direction of the one hole surface means. Specifically, A is the average of the width on one side of the photoresist layer protruding on the one hole surface and the width on the other side opposite to the one side value means.

[0248] Referring to FIG. 18, the etching step of forming one of the first hole surface and the second hole surface will be described.

[0249] In the etching step, one of the first hole surface and the second hole surface can be formed in the region where the photoresist layer P is opened. At this time, the etching solution can also contact the lower part of the side surface of the photoresist layer located in the open region, so that undercutting can occur. Along with this, a protruding portion of the photoresist layer can be located on the one hole surface

[0250] The protruding portion can be arranged on the hole surface at a distance from the hole surface. The protruding portion can surround the end VE of the hole surface. The protruding portion can partially cover the hole surface The end PE of the protruding portion can be arranged on the hole surface. The protruding portion may not contact the hole surface The protruding portion can be arranged on the hole surface by the extension of the photoresist layer in contact with the bridge region or the outer contour region

[0251] ​​​​​​​​ The shape of one of the first face hole and the second face hole may correspond to the shape of the open region of the photoresist layer. For example, when the shape of one of the first face hole and the second face hole is circular, the shape of the open region of the photoresist layer may also be circular.

[0252] The average diameter of one of the first face hole and the second face hole may be larger than the average diameter of the open region of the photoresist layer on the one face hole. For example, the average diameter of one of the first face hole and the second face hole may be 25 μm to 35 μm. For example, the average diameter of the open region of the photoresist layer on the one face hole may be 20 μm to 30 μm.

[0253] That is, the width of the open region of the photoresist layer and the through hole may be different from each other. Specifically, the width of one of the first face hole and the second face hole formed below the open region of the photoresist layer may be larger. Here, the width of one face hole can mean the maximum diameter measured on one side of the metal plate. Also, the width of one face hole compared with the width of the open region of the photoresist layer can mean the width arranged at the corresponding position up and down.

[0254] The smaller the value difference between the width of the open region of the photoresist layer and the width of one of the first face hole and the second face hole, the better the etching characteristics. Specifically, the smaller the value difference between the width of the open region of the photoresist layer and the width of one of the first face hole and the second face hole, ​​​​​​​​​​​​​​The region where the undercut occurs can be reduced. Accordingly, the expediency of the design of the through hole can be improved, and fine through holes can be efficiently formed in the process.

[0255] The ratio of the average diameter of the open region of the photoresist layer to the average diameter of the surface hole may have a value of 1 :1.5 or less. For example, the ratio of the average diameter of the open region of the photoresist layer to the average diameter of the surface hole may have a value of 1:1.1 to 1:1.4. For example , the ratio of the average diameter of the open region of the photoresist layer to the average diameter of the surface hole may have a value of 1 :1.3 to 1:1.4. When the ratio of the average diameter of the open region of the photoresist layer to the average diameter of the surface hole exceeds 1:1.5, the etching characteristics may deteriorate .

[0256] The value of A in the above formula 1 can be expressed as in the following formula 2.

[0257] <Formula 2> A = (A1 + A2) / 2

[0258] Referring to FIG. 18, A1 in the above formula 2 means the width of one side of the photoresist layer protrusion on the one surface hole, and A2 in the above formula 2 can mean the width of the other side of the photoresist layer protrusion on the one surface hole, which is opposite to the above-mentioned one side.

[0259] That is, the etching factor of one of the first surface hole and the second surface hole can be further arranged by the following formula 3. <Formula 3> TIFF2025087805000002.tif1862

[0260] The vapor deposition mask according to the embodiment has an etching factor that can be measured to be 2.5 or more in the etching step of forming the through hole. The larger the etching factor, the better the etching characteristics in the thickness direction of the metal plate, that is, in the depth direction of the through hole. The smaller the etching factor, the larger the width of the through hole can be. That is, the smaller the etching factor, the larger the width of the through hole. This may cause the phenomenon that the photoresist layer floats or separates.

[0261] At least one surface of the metal plate includes a hole pattern. At this time, the A value in the above formula 1 is 8 or less. For example, the A value in the above formula 1 can be 5 or less. For example, the A value in the above formula 1 can be 4 to 5. When the A value in the above formula 1 exceeds 8, the etching factor may decrease. When the A value in the above formula 1 exceeds 8, the difference between the average diameter of the open area of the photoresist layer and the average diameter of one through hole is large, so it may be difficult to design a fine through hole.

[0262]

[0263]

[0264] Hereinafter, the present invention will be described in more detail through examples and comparative examples. Such examples are only presented as examples for further explaining the present invention. Therefore, the present invention is not limited to such examples.

[0265] <Experimental Example 1: Size evaluation of the average diameter of the open area of the photoresist layer and the average diameter of the hole pattern formed below the open area>

Example 1

[0266] A first surface layer and a second surface layer of an Ni-Cr alloy material were formed by vapor deposition on a cold-rolled Invar base metal plate. formed.

[0267] At this time, the Ni-Cr alloy was an alloy containing 76 to 99% by weight of nickel and 1 to 2 24% by weight of chromium.

[0268] Thereafter, a photoresist layer including a plurality of open regions was formed on one of the first surface layer and the second surface layer. Thereafter, the etching process was performed only on the surface on which the photoresist layer including the plurality of open regions was formed. formed. Thereafter, the etching process was performed only on the surface on which the photoresist layer including the plurality of open regions was formed. was performed only on the surface on which the photoresist layer including the plurality of open regions was formed.

[0269] Through this, one of the first through-hole and the second through-hole was formed at the lower part of the open region of the photoresist layer. formed.

Example 2

[0270] A first surface layer and a second surface layer of an Ni-Cr-Fe alloy material were formed by vapor deposition on a cold-rolled Invar base metal plate. formed.

[0271] At this time, the Ni-Cr-Fe alloy was an alloy containing 76 to 99% by weight of nickel and iron and 1 to 24% by weight of chromium.

[0272] Thereafter, a photoresist layer including a plurality of open regions was formed on one of the first surface layer and the second surface layer. Thereafter, the etching process was performed only on the surface on which the photoresist layer including the plurality of open regions was formed. formed. Thereafter, the etching process was performed only on the surface on which the photoresist layer including the plurality of open regions was formed. was performed only on the surface on which the photoresist layer including the plurality of open regions was formed.

[0273] Through this, one of the first through-hole and the second through-hole was formed at the lower part of the open region of the photoresist layer. Example 2 is the same as Example 1 in all respects except that the alloy composition of the surface layer is different. was the same as Example 1 in all respects except that the alloy composition of the surface layer was different. The layer thickness and the etching process conditions were the same.

[0274] A cold-rolled Invar-based metal sheet was prepared.

[0275] Then, a photoresist having a plurality of open areas is formed on one surface of the Invar-based metal plate. After that, an etching process was performed to remove the photoresist layer containing the plurality of open areas. This was only done on the formed surface.

[0276] Through this, the first and second surface holes are formed under the open area of ​​the photoresist layer. One surface hole was formed.

[0277] In the comparative example 1, the thickness of the base metal plate is the same as that in the examples 1 and 2, and the etching process is performed. The process conditions were also the same.

[0278] The average diameter of the open area of ​​the photoresist layer according to Example 1 and Example 2 and the The difference in the average diameter of the surface holes formed in the lower part of the region is The difference between the average diameter of the open area and the average diameter of the surface holes formed under the open area is smaller than the difference between the average diameter of the open area and the average diameter of the surface holes formed under the open area. It was measured as such.

[0279] The average diameter of the open area and the average surface hole diameter of the photoresist layer according to Example 1 and Example 2 The average diameter was measured to be 1:1.5 or less. The average diameter of the open areas of the resist layer and the average diameter of the surface holes are in the range of 1:1.1 to 1:1. It was measured as 4.

[0280] Ratio of average diameter of open area and average diameter of surface holes of photoresist layer according to Comparative Example 1 was measured to be 1:1.7 or more. Specifically, the ratio of the average diameter of the open region of the photoresist layer according to Comparative Example 1 to the average diameter of the hole face was measured to be 1:1.7 to 1:1.8.

[0281] Figures 16 and 17 are photographs of the hole faces formed according to Example 1 and Comparative Example 1.

[0282] Referring to Figure 16, the diameter of any open region of the photoresist layer formed according to Example 1 is 23.8 μm, and the diameter of any hole face disposed below the open region of the photoresist layer is 32.85 μm.

[0283] On the other hand, referring to Figure 17, the diameter of any open region of the photoresist layer formed according to Comparative Example 1 is 22.43 μm, and the diameter of any hole face disposed below the open region of the photoresist layer is 39.15 μm.

[0284] The average diameter of the open region of the photoresist layer and the average diameter of the hole face according to Example 1 and Example 2 satisfy a ratio of 1:1.4 or less, thereby confirming that the etching characteristics of the through hole are excellent. Also, it was confirmed that the vapor deposition mask according to the example can include through holes with improved uniformity, and through this, the uniformity of the pattern shape vapor-deposited therethrough is improved. <Experimental Example 2: Evaluation of Etching Factor>

[0285]

Table 1

[0286] Table 1 shows the etching factors according to Example 1, Example 2, and Comparative Example 1.

[0287] ​​​​​​​​​The etching factors of the vapor deposition masks according to Example 1 and Example 2 are 2.5 or more. It can be seen that. For example, the etching factors of the vapor deposition masks according to Example 1 and Example 2 are found to be 2.5 to 2.7. Accordingly, the vapor deposition masks according to the examples can prevent the stripping of the photoresist layer in the etching process, and it can be seen that they have excellent etching characteristics for the surface holes or the through holes.

[0288] On the other hand, it can be seen that the etching factor of the vapor deposition mask according to Comparative Example 1 is less than 2.0. Specifically, it can be seen that the etching factor of the vapor deposition mask according to Comparative Example 1 is 1.7. Accordingly, in the vapor deposition mask according to Comparative Example 1, stripping of the photoresist layer can occur in the etching process, and it can be seen that the etching characteristics of the surface holes or the through holes deteriorate.

[0289] The etching rate means the amount etched per unit time,

[0290] For the cold-rolled Invar base metal plate according to Comparative Example 1, the etching rate of the outer surface is similar to the internal etching. Even when passing through the cold rolling process, the outer surface and the inside have the same composition and the crystal structures of the outer surface and the inside are the same or similar, so it can be seen that it is difficult to improve the etching characteristics only by the Invar material itself.

[0291] On the other hand, Examples 1 and 2 can include first and second surface layers capable of improving the etching factor to 2.5 or more. The metal surface layer of Example 1 is a binary alloy containing chromium that can slow down the etching rate compared to the base metal plate. The metal surface layer of Example 2 The surface layer is a ternary alloy containing chromium that can slow down the etching rate compared to the base metal plate. It is an alloy.

[0292] The metal surface layers according to Examples 1 and 2 can contain elements different from the base metal plate, such as a metal element excellent in corrosion resistance like Cr. Along with this, it can be seen that the etching rate of the metal surface layers according to Examples 1 and 2 is slower than the etching rate of the base metal plate. Along with this, the metal plates according to the examples can form fine through-holes. The etching rate of the surface layer may be slower than the etching rate of the base metal plate. That is, the etching rate of the base metal plate may be relatively faster than the etching rate of the surface layer. That is, when etching the base layer of the metal plate, the side direction of the surface layer (directions A1 and A2 in FIG. 18) may have a relatively slow etching rate, and the etching rate in the depth direction of the base metal plate (direction B in FIG. 18) may be relatively fast. Therefore, the etching factor of the examples can be increased, and through this, fine through-holes can be formed. The etching rate of the surface layer and the etching rate of the base metal plate can be confirmed by measuring the amount etched per unit time while etching the metal plate. When measured in such a manner, it can be confirmed that the amount etched is relatively small during the time when the surface layer is etched, and the amount etched is relatively large during the time when the base metal plate is etched. It can be seen that the etching rate of the surface layer is slower than the etching rate of the base metal plate. Accordingly, the metal plates according to the examples can form fine through-holes.

[0293] The etching rate of the surface layer may be slower than the etching rate of the base metal plate. That is, the etching rate of the base metal plate may be relatively faster than the etching rate of the surface layer. That is, when etching the base layer of the metal plate, the side direction of the surface layer (directions A1 and A2 in FIG. 18) may have a relatively slow etching rate, and the etching rate in the depth direction of the base metal plate (direction B in FIG. 18) may be relatively fast. Therefore, the etching factor of the examples can be increased, and through this, fine through-holes can be formed. The etching rate of the surface layer and the etching rate of the base metal plate can be confirmed by measuring the amount etched per unit time while etching the metal plate. When measured in such a way, it can be confirmed that the amount etched is relatively small during the time when the surface layer is etched, and the amount etched is relatively large during the time when the base metal plate is etched. The etching rate of the surface layer and the etching rate of the base metal plate can be confirmed by measuring the amount etched per unit time while etching the metal plate. When measured in this way, it can be confirmed that the amount etched is relatively small during the time when the surface layer is etched, and the amount etched is relatively large during the time when the base metal plate is etched. The etching rate of the surface layer and the etching rate of the base metal plate can be confirmed by measuring the amount etched per unit time while etching the metal plate. When measured in this way, it can be confirmed that the amount etched is relatively small during the time when the surface layer is etched, and the amount etched is relatively large during the time when the base metal plate is etched.

[0294] FIG. 18 is a cross-sectional view of the face hole according to Example 1.

[0295] Referring to FIG. 18, when the etching factor is 2.5 or more, the width of the aperture face is small, and the etching characteristics in the depth direction are excellent. Also, when the etching factor is 2.5 or more, the contact area of the bridge region BR located between the photoresist layer and the adjacent through hole is large and it is possible to stably prevent the peeling of the photoresist layer. Along with this a fine vapor deposition pattern can be formed through the vapor deposition mask according to the example.

[0296] FIG. 19 is a cross-sectional view of the aperture face according to Comparative Example 1.

[0297] Referring to FIG. 20, the aperture face according to Comparative Example 1 has an etching factor of 1.7 and adjacent through holes can overlap. Or, a peeling phenomenon of the photoresist layer may occur . It can be seen that, along with this, in Comparative Example 1, the manufacturing yield and process efficiency of the through hole decrease.

[0298] The vapor deposition mask according to the example includes a metal plate, a base metal plate including a first surface and a second surface facing each other, a first surface layer disposed on the first surface, and a second surface layer disposed on the second surface The metal plate includes a plurality of through holes, and the etching factor of the metal plate can be 2.5 or more.

[0299] Before forming the through hole, a metal surface layer can be disposed on the base metal plate in the vapor deposition mask according to the example. Along with this, the surface layer is not disposed on the region where the through hole is disposed and can be opened.

[0300] The internal region of the through hole can contain elements different from those of the surface layer. Also, even if the internal region of the through hole contains the same elements as the surface layer, the composition of the contained elements may be different. Accordingly, the etching rate of the metal surface layer can be slowed down.

[0301] That is, in the deposition mask according to the embodiment, the gold is removed in the etching process for forming the through holes. The etching rate of the base metal plate is faster than that of the metal surface layer, improving the etching efficiency. In addition, the uniformity of the through holes can be improved.

[0302] In addition, the OLED panel manufactured using the deposition mask according to the embodiment has excellent pattern deposition efficiency. This can improve deposition uniformity.

[0303] A deposition mask according to a second embodiment will be described with reference to FIGS.

[0304] The features of the first and second embodiments may be combined and applied, except where they conflict with the features of the first embodiment. Of course, the same explanation as in the first embodiment can be omitted. The same components may be given the same reference numerals.

[0305] 20 and 21, the metal plate included in the deposition mask according to the second embodiment is a venetian plate. The base metal plate 100a and the metal surface layer may be included.

[0306] A metal surface layer may be disposed on one or both sides of the base metal plate 100a.

[0307] A first surface layer 110 is disposed on one surface of the base metal plate 100a. A second surface layer 120 may be disposed on the other surface.

[0308] The metal plate for deposition mask has the first surface layer 110 and the second surface layer 111 on both sides of the base metal plate 100a. The base metal plate 100a may include the second surface layer 120. It can be arranged in a sandwich structure between the layer 110 and the second surface layer 120.

[0309] The base metal plate 100a can contain a substance different from that of the surface layer. The base metal plate 100a can contain an element different from that of the first surface layer 110. Also, the base metal plate 100a can contain an element different from that of the second surface layer 120.

[0310] Also, the base metal plate 100a can have a composition ratio different from that of the first and second metal surface layers 110 and 120.

[0311] In the embodiment, since the first surface layer 110 and the second surface layer 120 contain elements different from those of the base metal plate 100a, the corrosion rates of the first and second surface layers can be made slower than that of the base metal plate. That is, the corrosion rate of the base metal plate 100a, which is a bulk metal plate, may be faster than the corrosion rate of the metal surface layer. Accordingly, the etching factor of the vapor deposition mask according to the embodiment can be increased. Also, the vapor deposition mask according to the embodiment can improve the vapor deposition efficiency of the R, G, and B patterns by uniformly forming a plurality of through holes.

[0312] The surface layer can contain various elements other than metal elements such as Ni, Cr, Mo, Mn, Ti, Co, Cu, Fe, and Ag, and having a primary ionization energy of 450 to 850 kJ / Mol such as Nb, V, In, and Sb.

[0313] The surface layer is Ni, Cr, Mo, Mn, Ti, Co, Cu, Fe, Au, Al, Mg ​​​​​​​​​​At least one of O, Ca, Cr, Si, Ti, Ag, Nb, V, In, and Sb For example, the surface layer may contain elements such as Ni, Cr, Mo, Mn, Ti, C. o, Cu, Fe, Au, Al, Mg, O, Ca, Cr, Si, Ti, Ag, Nb, V, In For example, the layer may be a binary layer containing two different elements among Sb and Sb. The surface layers 100b and 100c are Ni, Cr, Mo, Mn, Ti, Co, Cu, Fe, Au, Among Al, Mg, O, Ca, Cr, Si, Ti, Ag, Nb, V, In and Sb, The surface layer may be a ternary layer containing three different elements. For example, the surface layer may be composed of Ni, Cr, Mo, Mn, Ti, Co, Cu, Fe, Au, Al, Mg, O, Ca, Cr, Si, Ti , Ag, Nb, V, In, and Sb. Of course, this is the case.

[0314] The surface layer contains at least one element selected from the group consisting of Al, Mg, O, Ca, Cr, Si, and Mn. In one example, the surface layer may be a metal oxide layer. The surface layer is a natural oxide layer having a thickness of 5 nm or less that may be formed during the transportation process after the rolling process of the base metal plate. It may be a surface layer formed by a separate process such as sputtering, rather than a chemically-induced film. The surface layer may be a chromium layer or a chromium alloy layer. The chromium content (wt%) of the layer is greater than the chromium content (wt%) of the base metal layer. The surface layer slows down the corrosion rate on the surface of the metal plate used in the deposition mask. Accordingly, the deposition mask according to the embodiment has an improved etching factor. obtain.

[0315] The thickness of the base metal plate 100a may be greater than the thickness of the surface layer. The base metal plate 100a may have a thickness greater than at least one of the thicknesses of the first surface layer 110 and the second surface layer 120.

[0316] The thickness of the base metal plate 100a can be 30 μm or less. For example, the thickness of the base metal plate 100a can be from 1 μm to 30 μm. For example, the thickness of the base metal plate 100 a can be from 5 μm to 19.9 μm. For example, the thickness of the base metal plate 100a can be from 15 μm to 19.5 μm. For example, the thickness of the base metal plate 100a can be from 10 μm to 19.8 μm. When the thickness of the base metal plate 100a exceeds 30 μ m, the distance (pitch) between adjacent through-holes may increase. Along with this, the efficiency of forming a high-resolution or ultra-high-resolution display device may decrease. The base metal plate of the example can have a thickness of 20 μm or less, and the distance ( pitch) between adjacent through-holes can decrease. Therefore, it may be suitable for providing a high-resolution and / or ultra-high-resolution display device. That is, the vapor deposition mask according to the example can increase the number of pixels per inch (PPI).

[0317] The first surface layer 110 and the second surface layer 120 can have corresponding thicknesses. Here, "corresponding" can include an error due to tolerance.

[0318] The surface layer can be from 0.5 nm to 1000 nm or less on one or both sides of the base metal plate. The surface layer can be from 5 nm to 850 nm or less on one or both sides of the base metal plate. ​​​​It can be arranged with the thickness. The surface layer can be arranged with a thickness of 10 nm to 600 nm or less on one or both sides of the base metal plate.

[0319] The thickness of the first surface layer 110 can be 20 nm to 500 nm. For example, the thickness of the first surface layer 110 can be 20 nm to 50 nm. For example, the thickness of the first surface layer 110 can be 25 nm to 35 nm.

[0320] The thickness of the second surface layer 120 can be 20 nm to 500 nm. For example, the thickness of the second surface layer 120 can be 20 nm to 50 nm. For example, the thickness of the second surface layer 120 can be 25 nm to 35 nm.

[0321] When the thickness of the surface layer is less than 1 nm, the improvement effect of the etching factor by the metal surface layer may decrease. Along with this, the uniformity of the through holes may decrease. That is , when the thickness of the surface layer is less than 1 nm, through holes with large deviations in thickness and / or width are formed, so that the pattern formed by the metal plate having the through holes may not be uniform , and the manufacturing efficiency of the display device may decrease.

[0322] Also, when the thickness of the surface layer is less than 1 nm, it may be difficult to form through holes with a fine size .

[0323] When the thickness of the surface layer exceeds 1 μm, the manufacturing efficiency may decrease. The interface between the base metal plate 100a and the surface layer can contain a cation or an anionic substance. The base metal plate 100a can be etched by an acidic etching solution to a thickness of 20 μm or less and so on. It may have a thin thickness. Accordingly, on the surface of the base metal plate 100a, there may be contained cations such as protons (H+) of an acidic solution or anions of a conjugate base due to dissociation of the acidic solution. As an example, the interface between the base metal plate 100a and the surface layer may contain Cl, HSO, HPO, CHCO, any one of the ions in an amount of 0.1% by weight or less due to dissociation of an acidic solution such as hydrochloric acid, sulfuric acid, phosphoric acid, or acetic acid. - 、HSO 4 - 、H 2 PO 4 - 、CH 3 CO 2 - However, since the acidic solution can be removed by water washing, substantially no cations such as protons (H+) or anions of a conjugate base due to dissociation of the acidic solution remain. Here, the fact that substantially none remain means that cations such as protons (H+) or anions of a conjugate base due to dissociation of the acidic solution are detected at 0.01% by weight or less. However, since the acidic solution can be removed by water washing, substantially no cations such as protons (H+) or anions of a conjugate base due to dissociation of the acidic solution remain. However, since the acidic solution can be removed by water washing, substantially no cations such as protons (H+) or anions of a conjugate base due to dissociation of the acidic solution remain. Here, the fact that substantially none remain means that cations such as protons (H+) or anions of a conjugate base due to dissociation of the acidic solution are detected at 0.01% by weight or less. Here, the fact that substantially none remain means that cations such as protons (H+) or anions of a conjugate base due to dissociation of the acidic solution are detected at 0.01% by weight or less. Here, the fact that substantially none remain means that cations such as protons (H+) or anions of a conjugate base due to dissociation of the acidic solution are detected at 0.01% by weight or less.

[0324] The base metal plate 100a can include a surface etched with an acidic solution. The base metal plate 100a can have a greater roughness than a rolled metal plate. Specifically, the base metal plate 100a may have larger values of arithmetic mean roughness (Ra) and ten-point mean roughness (Rz) than a rolled Invar metal plate. The base metal plate 100a can include a surface etched with an acidic solution. The base metal plate 100a can have a greater roughness than a rolled metal plate. Specifically, the base metal plate 100a may have larger values of arithmetic mean roughness (Ra) and ten-point mean roughness (Rz) than a rolled Invar metal plate. Specifically, the base metal plate 100a may have larger values of arithmetic mean roughness (Ra) and ten-point mean roughness (Rz) than a rolled Invar metal plate.

[0325] The arithmetic mean roughness (Ra) of the base metal plate 100a measured at the interface between the base metal plate and the surface layer can exceed 50 nm. For example, the arithmetic mean roughness (Ra) of the base metal plate measured at the interface between the base metal plate and the surface layer can exceed 50 nm. The arithmetic mean roughness (Ra) of the base metal plate 100a measured at the interface between the base metal plate and the surface layer can exceed 50 nm. For example, the arithmetic mean roughness (Ra) of the base metal plate measured at the interface between the base metal plate and the surface layer can exceed 50 nm. The arithmetic mean roughness (Ra) of the base metal plate 100a measured at the interface with the surface layer may be 5 0 nm < Ra < 300 nm. For example, the arithmetic mean roughness (Ra) of the base metal plate 100a measured at the interface between the base metal plate and the surface layer may be 50 nm < Ra < 200 nm. For example, the arithmetic mean roughness (Ra) of the base metal plate 100a measured at the interface between the base metal plate and the surface layer may be 70 nm < Ra < 150 nm at the interface between the base metal plate and the surface layer. For example, the arithmetic mean roughness (Ra) of the base metal plate 100a measured at the interface between the base metal plate and the surface layer

[0326] The ten-point mean roughness (Rz) of the base metal plate 100a measured at the interface between the base metal plate and the surface layer may exceed 800 nm. For example, the ten-point mean roughness (Rz) of the base metal plate 100a measured at the interface between the base metal plate and the surface layer may be 800 nm < Rz < 2500 nm. For example, the ten-point mean roughness (Rz) of the base metal plate 100a measured at the interface between the base metal plate and the surface layer may be 800 nm < Rz < 2000 nm. For example, the ten-point mean roughness (Rz) of the base metal plate 100a measured at the interface between the base metal plate and the surface layer may be 800 n m < Rz < 2000 nm. For example, the ten-point mean roughness (Rz) of the base metal plate 100a measured at the interface between the base metal plate and the surface layer may be 800 nm < Rz < 1500 nm.

[0327] The roughness of one surface of the first surface layer 110 in direct contact with the base metal plate 100a may be greater than that of the other surface of the first surface layer 110 that forms the surface of the evaporation mask metal plate. Accordingly, the interface between the base metal plate 100a and the first surface layer 110 has excellent adhesion characteristics. Also, the other surface of the first surface layer 110 that forms the surface of the evaporation mask metal plate may be less rough than one surface, improving the etching quality of the first surface layer 110 that forms the surface of the evaporation mask metal plate. Accordingly, the interface between the base metal plate 100a and the first surface layer 110 has excellent adhesion characteristics. Also, the other surface of the first surface layer 110 that forms the surface of the evaporation mask metal plate may be less rough than one surface, improving the etching quality of the first surface layer 110 that forms the surface of the evaporation mask metal plate. Accordingly, the interface between the base metal plate 100a and the first surface layer 110 It can be done.

[0328] The roughness of one surface of the second surface layer 120 that is in direct contact with the base metal plate 100a is such that it may be larger than the other surface of the second surface layer 120 that forms the surface of the evaporation mask metal plate and is opposite to the one surface. Along with this, the interface between the base metal plate 100a and the second surface layer 120 has excellent adhesion characteristics. Also, the other surface of the second surface layer 120 that forms the surface of the evaporation mask metal plate may have a smaller roughness than the one surface, and the etching quality can be improved. Also, the base metal plate can also form the through hole to remove the surface layer. In this case, the arithmetic mean roughness (Ra) measured on the surface of the base metal plate from which the surface layer has been removed can exceed 50 nm.

[0329] Also, the evaporation mask 100 can have different widths of through holes depending on the thickness direction of the through holes. Referring to FIG. 20, the width W1 of the first surface hole V1 may be larger than the width W3 of the connecting portion CA. Specifically, the first surface hole V1 may have a decreasing width of the through hole as it goes from the first surface 101 towards the connecting portion CA. More specifically, the first surface hole V1 may gradually decrease in width of the through hole as it goes from the first surface 101 towards the connecting portion CA.

[0330] The width W2 of the second surface hole V2 may be larger than the width W3 of the connecting portion CA. Specifically, the second surface hole V2 may have a decreasing width of the through hole as it goes from the second surface 102 towards the connecting portion CA.

[0331] Referring to FIG. 20, the width W1 of the first surface hole V1 may be larger than the width W3 of the connecting portion CA. Specifically, the first surface hole V1 may have a decreasing width of the through hole as it goes from the first surface 101 towards the connecting portion CA. Furthermore, the first surface hole V1 may gradually decrease in width of the through hole as it goes from the first surface 101 towards the connecting portion CA. It may decrease.

[0332] The width W2 of the second surface hole V2 may be larger than the width W3 of the connecting portion CA. Specifically, the second surface hole V2 may have a decreasing width of the through hole as it goes from the second surface 102 towards the connecting portion CA. The width of the through-hole can be reduced. More specifically, the second surface hole V2 can gradually reduce in width of the through-hole as it goes towards the connecting portion CA from the second surface 102. The width of the through-hole can gradually decrease as it goes towards the connecting portion CA from the second surface 102.

[0333] Adjacent to the first surface hole V1, a third surface hole V3 formed on the first surface 101, and a fourth surface hole V4 formed on the second surface 102 adjacent to the second surface hole V1 communicate with each other through the connecting portion CA to form a through-hole. Adjacent to the second surface hole V1, a fourth surface hole V4 formed on the second surface 102 and the connecting portion C A can communicate with each other to form a through-hole.

[0334] The width W5 of the fourth through-hole V4 may be larger than the width W4 of the third through-hole V3. For example, the width W4 of the third through-hole V3 may be larger than the width W6 of the connecting portion CA. Specifically, the width of the through-hole of the third surface hole V3 can decrease as it goes towards the connecting portion CA from the first surface 101. More specifically, the width of the through-hole of the third surface hole V3 can gradually decrease as it goes towards the connecting portion CA from the first surface 101. For example, the width W5 of the fourth surface hole V4 may be larger than the width W6 of the connecting portion CA. Specifically, the width of the through-hole of the fourth surface hole V4 can decrease as it goes towards the connecting portion CA from the second surface 102. More specifically, the width of the through-hole of the fourth surface hole V4 can gradually decrease as it goes towards the connecting portion CA from the second surface 102. Referring to FIG. 21, the width W1 of the first surface hole V1 may be smaller than the width W3 of the connecting portion CA. Specifically, the width of the through-hole of the first surface hole V1 can increase as it goes towards the connecting portion CA from the first surface 101. More specifically, the width of the through-hole of the first surface hole V1 can gradually increase as it goes towards the connecting portion CA from the first surface 101. Referring to FIG. 21, the width W1 of the first surface hole V1 may be smaller than the width W3 of the connecting portion CA. Specifically, the width of the through-hole of the first surface hole V1 can increase as it goes towards the connecting portion CA from the first surface 101. More specifically, the width of the through-hole of the first surface hole V1 can gradually increase as it goes towards the connecting portion CA from the first surface 101.

[0335] Referring to FIG. 21, the width W1 of the first surface hole V1 may be smaller than the width W3 of the connecting portion CA. Specifically, the width of the through-hole of the first surface hole V1 can increase as it goes towards the connecting portion CA from the first surface 101. More specifically, the width of the through-hole of the first surface hole V1 can gradually increase as it goes towards the connecting portion CA from the first surface 101. Specifically, the width of the through-hole of the first surface hole V1 can increase as it goes towards the connecting portion CA from the first surface 101. More specifically, the width of the through-hole of the first surface hole V1 can gradually increase as it goes towards the connecting portion CA from the first surface 101. Specifically, the width of the through-hole of the first surface hole V1 can increase as it goes towards the connecting portion CA from the first surface 101. More specifically, the width of the through-hole of the first surface hole V1 can gradually increase as it goes towards the connecting portion CA from the first surface 101. Specifically, the width of the through-hole of the first surface hole V1 can increase as it goes towards the connecting portion CA from the first surface 101. More specifically, the width of the through-hole of the first surface hole V1 can gradually increase as it goes towards the connecting portion CA from the first surface 101. It is possible.

[0336] The width W2 of the second surface hole V2 may be larger than the width W3 of the connecting portion CA. Specifically the second surface hole V2 may have a decreasing width of the through hole as it goes from the second surface 102 towards the connecting portion CA. More specifically, the second surface hole V2 may have a gradually decreasing width of the through hole as it goes from the second surface 102 towards the connecting portion CA.

[0337] Adjacent to the first surface hole V1, a third surface hole V3 formed on the first surface 101, and adjacent to the second surface hole V1, a fourth surface hole V4 formed on the second surface 102 communicate with each other through the connecting portion CA to form a through hole.

[0338] The width W5 of the fourth through hole V4 may be larger than the width W4 of the third through hole V3. For example, the width W4 of the third through hole V3 may be smaller than the width W6 of the connecting portion CA . Specifically, the third surface hole V3 may have an increasing width of the through hole as it goes from the first surface 101 towards the connecting portion CA. More specifically, the third surface hole V3 may have a gradually increasing width of the through hole as it goes from the first surface 1 01 towards the connecting portion CA. For example, the width W5 of the fourth surface hole V4 may be larger than the width W6 of the connecting portion CA. Specifically the fourth surface hole V4 may have a decreasing width of the through hole as it goes from the second surface 102 towards the connecting portion CA. More specifically, the fourth surface hole V4 may have a gradually decreasing width of the through hole as it goes from the second surface 102 towards the connecting portion CA. Accordingly, a fine-sized deposition pattern can be efficiently formed. As it goes from the second surface 102 towards the connecting portion CA, the width of the through hole may gradually decrease. Consequently, a fine-sized deposition pattern can be efficiently formed.

[0339] Referring to FIGS. 20 and 21, the vapor deposition mask according to the embodiment includes a plurality of through holes which can be formed. At this time, the width of one through hole can be 40 μm or less. For example, the width of the through hole can be 5 μm to 40 μm. For example, the width of the through hole can be 10 μm to 35 μm. For example, at least one of the width W1 of the first through hole and the width W2 of the second through hole can have a width of 40 μm or less. When the width of the through hole exceeds 40 μm, it may be difficult to form a fine vapor deposition pattern.

[0340] Adjacent to the first through hole V1, the third through hole V3 formed on the first surface 101 and the second through hole V1 are adjacent to the fourth through hole V4 formed on the second surface 102, respectively, and the a plurality of through holes can be formed by communicating through the connecting portion CA.

[0341] The vapor deposition mask according to the embodiment can include an arbitrary first through hole and a bridge region BR between the first through hole and a second through hole adjacent to the first through hole For example, the first surface 101 between the first through hole V1 and the third through hole V3 can include a first bridge region BR1, and the second surface 102 between the second through hole V1 and the fourth through hole V4 can include a second bridge region B R2. The first bridge region BR1 may be larger than the planar area of the second bridge region BR2 . The bridge region can support the plurality of through holes to be separated at a certain interval .

[0342] Referring to FIGS. 22 to 24, a vapor deposition mask with various cross-sectional structures according to the embodiment will be described .

[0343] ​The vapor deposition mask includes a first surface and a second surface facing each other, and a first hole V1 on the first surface and a second hole V2 on the second surface can include an inflection point P2 therebetween.

[0344] Based on the inflection point P2, the angle to the first hole V1 and the angle to the second hole V2 can be different from each other. At this time, the inflection point can be any point at the end of the connecting portion CA .

[0345] Referring to FIG. 22, the inclination angle θ1 of the vapor deposition mask connecting the inflection point P2 and an arbitrary point P3 at the end of the second hole V2 can be 90 degrees or less. When the inclination angle connecting the inflection point P2 and an arbitrary point P3 at the end of the second hole V2 exceeds 90 degrees, it is difficult to accommodate the deposited material, and the vapor deposition efficiency may decrease.

[0346] The inclination angle θ1 connecting the inflection point P2 and an arbitrary point P3 at the end of the second hole V2 can be in the range of 20 degrees to 70 degrees. When the inclination angle connecting the inflection point P2 and an arbitrary point P3 at the end of the second hole V2 is in the range of 20 degrees to 70 degrees, the uniformity of vapor deposition can be improved.

[0347] For example, the inclination angle connecting the inflection point P2 and an arbitrary point P3 at the end of the second hole V2 can be in the range of 30 degrees to 60 degrees. For example, the inclination angle connecting the inflection point P2 and an arbitrary point P3 at the end of the second hole V2 can be in the range of 32 degrees to 38 degrees or 52 degrees to 58 degrees.

[0348] An arbitrary point P1 at the end of the first hole V1 and an arbitrary point P3 at the end of the second hole V2 ​​​​​The inclination angle between them can be 70 degrees or less. For example, any point P1 at the end of the first face hole V1 and any point P3 at the end of the second face hole V2, the inclination angle therebetween can be 60 degrees or less. For example, the inclination angle between any point P1 at the end of the first face hole V1 and any point P3 at the end of the second face hole V2 can be 50 degrees or less. Accordingly, it can have an inclination angle that can well accommodate the deposited material.

[0349] The inclination angle θ2 of the deposition mask connecting the inflection point P2 and any point P1 at the end of the first face hole V1 can exceed 90 degrees.

[0350] The inclination angle θ2 of the deposition mask connecting the inflection point P2 and any point P1 at the end of the first face hole V1 can be more than 90 degrees and 110 degrees or less.

[0351] Also, the inclination angle θ2 of the deposition mask connecting the inflection point P2 and any point P1 at the end of the first face hole V1 can be 95 degrees or more and 100 degrees or less.

[0352] That is, when the inclination angle θ2 of the deposition mask exceeds 110 degrees, the first face hole larger than the connecting portion can include the shadow region SA. Accordingly, a phenomenon in which the deposition pattern emitted through the first face hole spreads can occur. When the inclination angle θ2 of the deposition mask is less than 90 degrees, when removing the mask after performing deposition through the mask, the deposited material can be separated from the deposition substrate.

[0353] The deposition mask according to the embodiment solves the problem that it is difficult to provide a high-resolution and / or ultra-high-resolution display device because the deposition pattern is formed larger than the width of the connection region. Therefore, the overall thickness of the metal plate for the vapor deposition mask can be formed to be 20 μm or less. Also , as the height H1 of the first hole face increases, the vapor deposition pattern spreads, so the height H1 of the first hole face can be formed to be 5 μm or less. For example, the height H1 of the first hole face can be 3 μm or less . On the other hand, the height H2 of the second hole face V2 may be greater than the height H1 of the first hole face V1 . Also, in the embodiment, a metal surface layer is formed on the metal plate for the vapor deposition mask to increase the etching factor , thereby enabling the formation of a fine vapor deposition pattern.

[0354] Referring to FIG. 23, the ease of forming through holes due to the metal plate for the vapor deposition mask being formed to be 20 μm or less is explained.

[0355] FIGS. 23(a), (b), and (c) are diagrams explaining whether through holes can be formed by etching when the thickness T of the metal plate for the vapor deposition mask is changed.

[0356] When the width of the open region of the photoresist layer is fixed and etching is performed for the same time using metal plates of the same material, it can be seen that through holes are not formed in FIGS. 23(a) and 2 3(b) where the thickness of the metal plate for the vapor deposition mask is large. On the other hand, it can be seen that through holes are formed in FIG. 23(c) where the thickness of the metal plate for the vapor deposition mask is small. That is, the metal plate for the vapor deposition mask according to the embodiment can have a thin thickness of 20 μm or less and can quickly form through holes of a fine size, so the manufacturing process can be improved.

[0357] Referring to FIG. 24, the ease of forming fine through holes due to an increase in the etching factor is explained .

[0358] Figs. 24(a), (b), and (c) are diagrams explaining whether a through-hole can be formed by etching when the depth (b) in the central direction of the etched face is changed. Fig. 24(a) , (b), and (c) are diagrams showing changes in the etching factor using a metal plate of the same material with the width of the open region of the photoresist layer kept constant. , (b), and (c) are diagrams showing changes in the etching factor using a metal plate of the same material with the width of the open region of the photoresist layer kept constant. Figs. 24(a)

[0359] Fig. 24(a) shows that the etching factor is 0.5 when the width (a) of one end extending from the bridge region of the open photoresist layer and protruding in the central direction of the face and the depth (b) in the central direction of the etched face are in a ratio of 1:0.5. Figs. 24(a) Fig. 24(a) shows that the etching factor is 0.5 when the width (a) of one end extending from the bridge region of the open photoresist layer and protruding in the central direction of the face and the depth (b) in the central direction of the etched face are in a ratio of 1:0.5. is a diagram showing that the etching factor is 0.5 when the width (a) of one end extending from the bridge region of the open photoresist layer and protruding in the central direction of the face and the depth (b) in the central direction of the etched face are in a ratio of 1:0.5.

[0360] <Equation 1> Etching Factor = B / A

[0361] In the above Equation 1, B is the depth in the central direction of the etched face, and A is the width of one end extending from the bridge region of the open photoresist layer and protruding in the central direction of the face. In the above Equation 1, B is the depth in the central direction of the etched face, and A is the width of one end extending from the bridge region of the open photoresist layer and protruding in the central direction of the face. is the width of one end extending from the bridge region of the open photoresist layer and protruding in the central direction of the face.

[0362] Fig. 24(b) shows that the etching factor is 1.0 when the width (a) of one end extending from the bridge region of the open photoresist layer and protruding in the central direction of the face and the depth (b) in the central direction of the etched face are in a ratio of 1:1. Fig. 24(b) shows that the etching factor is 1.0 when the width (a) of one end extending from the bridge region of the open photoresist layer and protruding in the central direction of the face and the depth (b) in the central direction of the etched face are in a ratio of 1:1. Fig. 24(b) shows that the etching factor is 1.0 when the width (a) of one end extending from the bridge region of the open photoresist layer and protruding in the central direction of the face and the depth (b) in the central direction of the etched face are in a ratio of 1:1. is a diagram showing that the etching factor is 1.0 when the width (a) of one end extending from the bridge region of the open photoresist layer and protruding in the central direction of the face and the depth (b) in the central direction of the etched face are in a ratio of 1:1.

[0363] Fig. 24(c) shows that the etching factor is 2.0 when the width (a) of one end extending from the bridge region of the open photoresist layer and protruding in the central direction of the face and the depth (b) in the central direction of the etched face are in a ratio of 1:2. Fig. 24(c) shows that the etching factor is 2.0 when the width (a) of one end extending from the bridge region of the open photoresist layer and protruding in the central direction of the face and the depth (b) in the central direction of the etched face are in a ratio of 1:2. Fig. 24(c) shows that the etching factor is 2.0 when the width (a) of one end extending from the bridge region of the open photoresist layer and protruding in the central direction of the face and the depth (b) in the central direction of the etched face are in a ratio of 1:2. Yes.

[0364] Referring to FIGS. 24(a), 24(b), and 24(c), it can be seen that at the same depth of the metal plate, the smaller the size of the through holes formed, the greater the etching factor. That is, for the deposition mask for manufacturing a high-resolution and / or ultra-high-resolution display device, the depth (b) in the central direction of the etched hole surface should increase. For this purpose, the metal plate for the deposition mask according to the embodiment can include a metal surface layer on the base metal plate. That is, it can be seen that the smaller the size of the through holes formed, the greater the etching factor at the same depth of the metal plate. That is, for the deposition mask for manufacturing a high-resolution and / or ultra-high-resolution display device, the depth (b) in the central direction of the etched hole surface should increase. For this purpose, the metal plate for the deposition mask according to the embodiment can include a metal surface layer on the base metal plate. That is, for the deposition mask for manufacturing a high-resolution and / or ultra-high-resolution display device, the depth (b) in the central direction of the etched hole surface should increase. For this purpose, the metal plate for the deposition mask according to the embodiment can include a metal surface layer on the base metal plate. That is, for the deposition mask for manufacturing a high-resolution and / or ultra-high-resolution display device, the depth (b) in the central direction of the etched hole surface should increase. For this purpose, the metal plate for the deposition mask according to the embodiment can include a metal surface layer on the base metal plate. That is, for the deposition mask for manufacturing a high-resolution and / or ultra-high-resolution display device, the depth (b) in the central direction of the etched hole surface should increase. For this purpose, the metal plate for the deposition mask according to the embodiment can include a metal surface layer on the base metal plate.

[0365] The etching factor of the deposition mask according to the embodiment can be 1.2 or more. The etching factor of the deposition mask according to the embodiment can be 1.5 or more. The etching factor of the deposition mask according to the embodiment can be 1.6 or more. The etching factor of the deposition mask according to the embodiment can be 2.0 or more. Accordingly, the deposition mask according to the embodiment can have a resolution of 600 PPI or more. For example, the deposition mask according to the embodiment can have a resolution of 700 PPI or more. For example, the deposition mask according to the embodiment can have a resolution of 800 PPI or more. The etching factor of the deposition mask according to the embodiment can be 1.5 or more. The etching factor of the deposition mask according to the embodiment can be 1.6 or more. The etching factor of the deposition mask according to the embodiment can be 2.0 or more. Accordingly, the deposition mask according to the embodiment can have a resolution of 600 PPI or more. For example, the deposition mask according to the embodiment can have a resolution of 700 PPI or more. For example, the deposition mask according to the embodiment can have a resolution of 800 PPI or more. The etching factor of the deposition mask according to the embodiment can be 1.6 or more. The etching factor of the deposition mask according to the embodiment can be 2.0 or more. Accordingly, the deposition mask according to the embodiment can have a resolution of 600 PPI or more. For example, the deposition mask according to the embodiment can have a resolution of 700 PPI or more. For example, the deposition mask according to the embodiment can have a resolution of 800 PPI or more. The etching factor of the deposition mask according to the embodiment can be 2.0 or more. Accordingly, the deposition mask according to the embodiment can have a resolution of 600 PPI or more. For example, the deposition mask according to the embodiment can have a resolution of 700 PPI or more. For example, the deposition mask according to the embodiment can have a resolution of 800 PPI or more. The etching factor of the deposition mask according to the embodiment can be 2.0 or more. Accordingly, the deposition mask according to the embodiment can have a resolution of 600 PPI or more. For example, the deposition mask according to the embodiment can have a resolution of 700 PPI or more. For example, the deposition mask according to the embodiment can have a resolution of 800 PPI or more. The etching factor of the deposition mask according to the embodiment can be 2.0 or more. Accordingly, the deposition mask according to the embodiment can have a resolution of 600 PPI or more. For example, the deposition mask according to the embodiment can have a resolution of 700 PPI or more. For example, the deposition mask according to the embodiment can have a resolution of 800 PPI or more. The etching factor of the deposition mask according to the embodiment can be 2.0 or more. Accordingly, the deposition mask according to the embodiment can have a resolution of 600 PPI or more. For example, the deposition mask according to the embodiment can have a resolution of 700 PPI or more. For example, the deposition mask according to the embodiment can have a resolution of 800 PPI or more.

[0366] FIGS. 25 to 30 are diagrams showing the manufacturing process of the deposition mask according to FIG. 22.

[0367] The deposition mask according to the embodiment can be manufactured including a step of preparing a base metal plate; a surface layer forming step of disposing a metal surface layer on the base metal plate; a photoresist layer forming step of disposing an opened photoresist layer on the surface layer; and an etching step of forming a hole surface corresponding to the opened photoresist layer. The deposition mask according to the embodiment can be manufactured including a step of preparing a base metal plate; a surface layer forming step of disposing a metal surface layer on the base metal plate; a photoresist layer forming step of disposing an opened photoresist layer on the surface layer; and an etching step of forming a hole surface corresponding to the opened photoresist layer. The deposition mask according to the embodiment can be manufactured including a step of preparing a base metal plate; a surface layer forming step of disposing a metal surface layer on the base metal plate; a photoresist layer forming step of disposing an opened photoresist layer on the surface layer; and an etching step of forming a hole surface corresponding to the opened photoresist layer. The deposition mask according to the embodiment can be manufactured including a step of preparing a base metal plate; a surface layer forming step of disposing a metal surface layer on the base metal plate; a photoresist layer forming step of disposing an opened photoresist layer on the surface layer; and an etching step of forming a hole surface corresponding to the opened photoresist layer.

[0368] First, referring to FIG. 25, the preparation step of the metal substrate will be described. The metal substrate MS can contain a metallic substance. The metal substrate MS can contain a nickel alloy. For example, the metal substrate MS can be an alloy of nickel and iron. At this time, the nickel can be about 35 wt% to about 37 wt%, and the iron can be about 63 wt% to about 65 wt%. As an example, the metal substrate MS can contain Invar which contains nickel at about 35 wt% to about 37 wt%, iron at about 63 wt% to about 65 wt%, and at least one or more of trace amounts of C, Si, S, P, Cr, Mo, Mn, Ti, Co, Cu, Fe , Ag, Nb, V, In, Sb.

[0369] The thickness To of the metal substrate MS can exceed 20 μm. For example, the thickness To of the metal substrate MS can be 30 μm or less. Specifically, the thickness To of the metal substrate MS can be 25 μm or less. Accordingly, the thickness of the base metal plate 100a can be manufactured to be 20 μm or less.

[0370] Or, the thickness To of the metal substrate MS can be 20 μm or less. Accordingly, the thickness of the base metal plate 100a can be manufactured to be 15 μm or less.

[0371] The preparation step of the base metal plate can include various thickness reduction steps. For example, the base metal plate can further include a thickness reduction step by chemical or electrical treatment. That is, the preparation step of the base metal plate can include the step of processing the metal substrate MS with a thickness exceeding 20 μm into a base metal plate with a thickness of 20 μm or less.

[0372] Referring to FIG. 26, the step of forming the base metal plate will be described.

[0373] By processing the metal substrate MS by chemical or electrical methods, the thickness of the metal substrate MS can be reduced by about 15% to about 25%.

[0374] The metal substrate MS is etched through a chemical agent to form a base metal plate 100a with a thickness reduced by about 20% from the metal substrate MS. At this time, the chemical agent is an acidic solution, which can be a variety of organic acid solutions or a variety of inorganic acid solutions. Or, the metal substrate MS can be electrolyzed electrically to form a base metal plate 100a with a thickness reduced by about 20% from the metal substrate MS. That is, the base metal plate 100a according to the embodiment can be manufactured without using a rolling method. To manufacture a high-resolution display device, an Invar with a thickness of 20 μm or less should be provided. A thick raw material can be processed into a thin Invar through repeated rolling processes,

[0375] but there are problems such as high process difficulty and high process costs. To solve such problems, the Invar can be processed into a thin thickness by the chemical or electrical method. Accordingly, the thickness T1 of the non-rolled base metal plate 100a can be 20 μm or less. For example, the thickness T1 of the non-rolled base metal plate 100a can be 15 μm or less.

[0376] Referring to FIG. 27, the step of forming the metal surface layer will be described.

[0377] ​​​​​The surface of the base metal plate 100a may have a reduced etching factor due to the chemical or electrical treatment. That is, the surface of the base metal plate 100a can be deformed to have a large roughness by chemical or electrical treatment, thereby causing a reduction in the etching factor. Therefore, a metal surface layer can be formed on one or both sides of the base metal plate 100a. For example, when forming the first through-hole and the second through-hole through double-sided etching of the metal plate, the first surface layer 110 and the second surface layer 120 can be formed on both sides of the base metal plate 100a. Or, as shown in FIG. 32, when forming only the second through-hole through etching of one side of the metal plate, a metal surface layer can be formed on one side of the base metal plate 100a. The surface layer can be various materials that can improve the etching factor. The surface layer can be various materials for providing an etching factor of 1.2 or more. The surface layer can be various materials for providing an etching factor of 1.5 or more. The surface layer can be various materials for providing an etching factor of 1.6 or more. The surface layer can be various materials for providing an etching factor of 2.0 or more.

[0378] The surface layer can be formed to be 1 μm or less. The surface layer can be formed to be 100 nm or less. The surface layer can be formed to be 50 nm or less. The surface layer can contain at least one element among Al, Mg, O, Ca, Cr, Si, and Mn. For example, when forming the first through-hole and the second through-hole through double-sided etching of the metal plate, the first surface layer 110 and the second surface layer 120 can be formed on both sides of the base metal plate 100a. The surface layer can be formed to be 1 μm or less. The surface layer can be formed to be 100 nm or less. The surface layer can be formed to be 50 nm or less. The surface layer can contain at least one element among Al, Mg, O, Ca, Cr, Si, and Mn. The surface layer can be various materials that can improve the etching factor. The surface layer can be various materials for providing an etching factor of 1.2 or more. The surface layer can be various materials for providing an etching factor of 1.5 or more. The surface layer can be various materials for providing an etching factor of 1.6 or more. The surface layer can be various materials for providing an etching factor of 2.0 or more.

[0379] Or, as shown in FIG. 32, when forming only the second through-hole through etching of one side of the metal plate, a metal surface layer can be formed on one side of the base metal plate 100a. The surface layer can be formed to be 1 μm or less. The surface layer can be formed to be 100 nm or less. The surface layer can be formed to be 50 nm or less. The surface layer can contain at least one element among Al, Mg, O, Ca, Cr, Si, and Mn.

[0380] The surface layer can be various materials that can improve the etching factor. The surface layer can be various materials for providing an etching factor of 1.2 or more. The surface layer can be various materials for providing an etching factor of 1.5 or more. The surface layer can be various materials for providing an etching factor of 1.6 or more. The surface layer can be various materials for providing an etching factor of 2.0 or more. The surface layer can be formed to be 1 μm or less. The surface layer can be formed to be 100 nm or less. The surface layer can be formed to be 50 nm or less. The surface layer can contain at least one element among Al, Mg, O, Ca, Cr, Si, and Mn. The surface layer can be various materials that can improve the etching factor. The surface layer can be various materials for providing an etching factor of 1.2 or more. The surface layer can be various materials for providing an etching factor of 1.5 or more. The surface layer can be various materials for providing an etching factor of 1.6 or more. The surface layer can be various materials for providing an etching factor of 2.0 or more. The surface layer can be formed to be 1 μm or less. The surface layer can be formed to be 100 nm or less. The surface layer can be formed to be 50 nm or less. The surface layer can contain at least one element among Al, Mg, O, Ca, Cr, Si, and Mn. The surface layer can be various materials that can improve the etching factor. The surface layer can be various materials for providing an etching factor of 1.2 or more. The surface layer can be various materials for providing an etching factor of 1.5 or more. The surface layer can be various materials for providing an etching factor of 1.6 or more. The surface layer can be various materials for providing an etching factor of 2.0 or more. The surface layer can be formed to be 1 μm or less. The surface layer can be formed to be 100 nm or less. The surface layer can be formed to be 50 nm or less. The surface layer can contain at least one element among Al, Mg, O, Ca, Cr, Si, and Mn.

[0381] The surface layer can be formed to be 1 μm or less. The surface layer can be formed to be 100 nm or less. The surface layer can be formed to be 50 nm or less. The surface layer can contain at least one element among Al, Mg, O, Ca, Cr, Si, and Mn. The surface layer can be formed to be 1 μm or less. The surface layer can be formed to be 100 nm or less. The surface layer can be formed to be 50 nm or less. The surface layer can contain at least one element among Al, Mg, O, Ca, Cr, Si, and Mn. The surface layer can be formed to be 1 μm or less. The surface layer can be formed to be 100 nm or less. The surface layer can be formed to be 50 nm or less. The surface layer can contain at least one element among Al, Mg, O, Ca, Cr, Si, and Mn.

[0382] The thickness T2 of the first surface layer 110 can be from 1 nm to 100 nm. The first sur face layer 110 can have a thickness T2 of from 1 nm to 50 nm.

[0383] The thickness T3 of the second surface layer 120 can be from 1 nm to 100 nm. The second sur face layer 120 can have a thickness T3 of from 1 nm to 50 nm.

[0384] That is, the surface layer may have different adhesion to the photoresist layer depending on the elements contained therein and may have different etching factors. Therefore, depending on the elements contained in the metal surface layer, it can have various optimal thicknesses in the range of 1 nm to 100 nm.

[0385] The surface layer can be formed by various methods such as vapor deposition, electroplating, solution processes, etc. For example, the surface layer can be formed by a vapor deposition process to form a thin film shape. Or, the surface layer can be formed by plating to produce a thickness greater than that of the vapor deposition process. Or, the afore mentioned surface layer can be formed by treating with a solution containing nano or microparticles. Also the surface layer can be formed by oxidizing the base metal plate to increase the etching factor.

[0386] Referring to FIG. 28, the photoresist layer formation step will be described.

[0387] A first photoresist layer P1 can be disposed on the first surface layer 110, and a second photoresist layer P2 can be disposed on the second surface layer 120.

[0388] A first photoresist layer P1 having an open region is disposed on the first surface layer 110, ​​A second photoresist layer P2 having an open region is disposed on the second surface layer 120. This can be achieved. Specifically, a photoresist material is applied onto the first surface layer 100a and the second surface layer 120 respectively, and the first photoresist layer P1 and the second photoresist layer P2 can be disposed respectively through exposure and development processes.

[0389] By disposing the widths of the open regions of the first photoresist layer P1 and the second photoresist layer P2 to be different, the width of the first via hole V1 formed on the first surface 101 and the width of the second via hole V2 formed on the second surface 102 can be different.

[0390] The first photoresist layer P1 and the second photoresist layer P2 can include a plurality of open regions for simultaneously forming through holes in the evaporation mask metal plate.

[0391] Referring to FIG. 29, an etching step for via hole formation will be described.

[0392] The first photoresist layer P1 can be partially disposed on the first surface layer 110. The region where the first photoresist layer P1 is disposed on the first surface layer 110 may not have through holes formed. That is, the first photoresist layer P1 can include a material that can maintain physical / chemical safety in the etching process. Accordingly, the first photoresist layer P1 can prevent etching of the first surface layer 110 and the base metal plate 100a disposed below the first photoresist layer P1.

[0393] The second photoresist layer P2 can be partially disposed on the second surface layer 120. The region where the second photoresist layer P2 is disposed on the second surface layer 120 may not have through-holes formed therein. That is, the second photoresist layer P2 may contain a substance capable of maintaining physical / chemical safety during the etching process. Accordingly, the second photoresist layer P2 can prevent the etching of the second surface layer 120 and the base metal plate 100a disposed below the second photoresist layer P2. On the other hand, the open regions of the first photoresist layer P1 and the second photoresist layer P2 can be etched during the etching process. Accordingly, through-holes of the metal plate can be formed in the open regions of the first photoresist layer P1 and the second photoresist layer P2. One side, the open regions of the first photoresist layer P1 and the second photoresist layer P2 can be etched during the etching process. Accordingly, through-holes of the metal plate can be formed in the open regions of the first photoresist layer P1 and the second photoresist layer P2. One side, the open regions of the first photoresist layer P1 and the second photoresist layer P2 can be etched during the etching process. Accordingly, through-holes of the metal plate can be formed in the open regions of the first photoresist layer P1 and the second photoresist layer P2. One side, the open regions of the first photoresist layer P1 and the second photoresist layer P2 can be etched during the etching process. Accordingly, through-holes of the metal plate can be formed in the open regions of the first photoresist layer P1 and the second photoresist layer P2.

[0394] One side, the open regions of the first photoresist layer P1 and the second photoresist layer P2 can be etched during the etching process. Accordingly, through-holes of the metal plate can be formed in the open regions of the first photoresist layer P1 and the second photoresist layer P2. One side, the open regions of the first photoresist layer P1 and the second photoresist layer P2 can be etched during the etching process. Accordingly, through-holes of the metal plate can be formed in the open regions of the first photoresist layer P1 and the second photoresist layer P2. One side, the open regions of the first photoresist layer P1 and the second photoresist layer P2 can be etched during the etching process. Accordingly, through-holes of the metal plate can be formed in the open regions of the first photoresist layer P1 and the second photoresist layer P2. One side, the open regions of the first photoresist layer P1 and the second photoresist layer P2 can be etched during the etching process. Accordingly, through-holes of the metal plate can be formed in the open regions of the first photoresist layer P1 and the second photoresist layer P2.

[0395] The first through-hole V1 is formed on the first surface of the metal plate by the etching process, the second through-hole V2 is formed on the second surface opposite to the first surface, and the through-hole can be formed by communicating the first through-hole V1 and the second through-hole V2 by the connecting portion CA. The first through-hole V1 is formed on the first surface of the metal plate by the etching process, the second through-hole V2 is formed on the second surface opposite to the first surface, and the through-hole can be formed by communicating the first through-hole V1 and the second through-hole V2 by the connecting portion CA. The first through-hole V1 is formed on the first surface of the metal plate by the etching process, the second through-hole V2 is formed on the second surface opposite to the first surface, and the through-hole can be formed by communicating the first through-hole V1 and the second through-hole V2 by the connecting portion CA.

[0396] For example, the etching process can be performed by a wet etching process. Accordingly, the first surface 101 and the second surface 102 can be etched simultaneously, and the process efficiency can be improved. As an example, the wet etching process can be performed at about 45 °C using an etching solution containing iron chloride. At this time, the etching solution can contain 35 to 45 wt% of FeCl. Specifically, the etching solution can contain 36 wt% of FeCl. For example, FeCl For example, the etching process can be performed by a wet etching process. Accordingly, the first surface 101 and the second surface 102 can be etched simultaneously, and the process efficiency can be improved. As an example, the wet etching process can be performed at about 45 °C using an etching solution containing iron chloride. At this time, the etching solution can contain 35 to 45 wt% of FeCl. Specifically, the etching solution can contain 36 wt% of FeCl. For example, FeCl For example, the etching process can be performed by a wet etching process. Accordingly, the first surface 101 and the second surface 102 can be etched simultaneously, and the process efficiency can be improved. As an example, the wet etching process can be performed at about 45 °C using an etching solution containing iron chloride. At this time, the etching solution can contain 35 to 45 wt% of FeCl. Specifically, the etching solution can contain 36 wt% of FeCl. For example, FeCl For example, the etching process can be performed by a wet etching process. Accordingly, the first surface 101 and the second surface 102 can be etched simultaneously, and the process efficiency can be improved. As an example, the wet etching process can be performed at about 45 °C using an etching solution containing iron chloride. At this time, the etching solution can contain 35 to 45 wt% of FeCl. Specifically, the etching solution can contain 36 wt% of FeCl. For example, FeCl 3 For example, the etching process can be performed by a wet etching process. Accordingly, the first surface 101 and the second surface 102 can be etched simultaneously, and the process efficiency can be improved. As an example, the wet etching process can be performed at about 45 °C using an etching solution containing iron chloride. At this time, the etching solution can contain 35 to 45 wt% of FeCl. Specifically, the etching solution can contain 36 wt% of FeCl. For example, FeCl For example, the etching process can be performed by a wet etching process. Accordingly, the first surface 101 and the second surface 102 can be etched simultaneously, and the process efficiency can be improved. As an example, the wet etching process can be performed at about 45 °C using an etching solution containing iron chloride. At this time, the etching solution can contain 35 to 45 wt% of FeCl. Specifically, the etching solution can contain 36 wt% of FeCl. For example, FeCl 3 For example, the etching process can be performed by a wet etching process. Accordingly, the first surface 101 and the second surface 102 can be etched simultaneously, and the process efficiency can be improved. As an example, the wet etching process can be performed at about 45 °C using an etching solution containing iron chloride. At this time, the etching solution can contain 35 to 45 wt% of FeCl. Specifically, the etching solution can contain 36 wt% of FeCl. For example, FeCl For example, the etching process can be performed by a wet etching process. Accordingly, the first surface 101 and the second surface 102 can be etched simultaneously, and the process efficiency can be improved. As an example, the wet etching process can be performed at about 45 °C using an etching solution containing iron chloride. At this time, the etching solution can contain 35 to 45 wt% of FeCl. Specifically, the etching solution can contain 36 wt% of FeCl. For example, FeCl 3The specific gravity of the etching solution containing 43% by weight thereof may be 1.47 at 20°C. FeCl 3 The specific gravity of the etching solution containing 41% by weight thereof may be 1.44 at 20°C. However, the examples are not limited thereto, and it goes without saying that various etching solutions can be used.

[0397] The metal plate for the vapor deposition mask forms a through hole penetrating the first surface layer 110, the base metal plate 100a, and the second surface layer 120, so that the etching solution can come into contact with the lower surface of the first surface layer 110 and the upper surface of the second surface layer 120. At this time, the first surface layer 110 and the second surface layer 120 may contain a substance that is more resistant to the etching solution than the base metal plate 100a, and the etching factor can be improved.

[0398] Referring to FIG. 30, the step of forming the vapor deposition mask by removing the photoresist layer will be described. By removing the first photoresist layer P1 and the second photoresist layer P2, the first surface layer 110 and the second surface layer 120 are disposed on the base metal plate 100a, and a metal plate having a plurality of through holes can be formed.

[0399] After the etching step, the etching factor of at least one of the first hole and the second hole calculated by the following formula 1 may be 1.2 or more. The etching factor of at least one of the first hole and the second hole calculated by the following formula 1 may be 1.5 or more. The etching factor of at least one of the first hole and the second hole calculated by the following formula 1 may be 1.6 ​​​​​​​​​​​​​The above may be the case. The etching factor of at least one of the first face and the second face calculated by the following formula 1 may be 2.0 or more. The etching factor of at least one of the first face and the second face calculated by the following formula 1 may be 2.0 or more.

[0400] The etching factor of the first face and the second face of the vapor deposition mask may be 1.2 or more. The etching factor of the first face and the second face of the vapor deposition mask may be 1.5 or more. The etching factor of the first face and the second face of the vapor deposition mask may be 1.6 or more. The etching factor of the first face and the second face of the vapor deposition mask may be 2.0 or more. .

[0401] Preferably, the etching factor of the second face larger than the first face may be 1.2 or more. The etching factor of the second face larger than the first face may be 1.2 or more. The etching factor of the second face larger than the first face may be 1.5 or more. The etching factor of the second face may be 1.6 or more. The etching factor of the second face may be 2.0 or more.

[0402] <Formula 1> Etching Factor = B / A

[0403] In the above formula 1, B is the depth in the central direction of the etched face.

[0404] A is the width of one end extending from the bridge region of the opened photoresist layer and protruding in the central direction of the face. direction.

[0405] Also, the vapor deposition mask according to the embodiment may have a thickness of 20 μm or less. Accordingly, the vapor deposition mask according to the embodiment can provide a high-resolution and ultra-high-resolution display device. Also, the vapor deposition mask according to the embodiment may have a thickness of 20 μm or less. Accordingly, the vapor deposition mask according to the embodiment can provide a high-resolution and ultra-high-resolution display device.

[0406] The vapor deposition mask according to the embodiment can have various structures.

[0407] The inclination angle of the first face hole according to the embodiment can be various.

[0408] Referring to FIG. 31, the inclination angle θ1 of the vapor deposition mask connecting the inflection point P2 and an arbitrary point P3 at the end of the second face hole V2 can be 90 degrees or less. When the inclination angle connecting the inflection point P2 and an arbitrary point P3 at the end of the second face hole V2 exceeds 90 degrees, it is difficult to accommodate the deposited material, and the vapor deposition efficiency may decrease.

[0409] The inclination angle θ1 connecting the inflection point P2 and an arbitrary point P3 at the end of the second face hole V2 can be in the range of 20 degrees to 70 degrees. When the inclination angle connecting the inflection point P2 and an arbitrary point P3 at the end of the second face hole V2 is in the range of 20 degrees to 70 degrees, the uniformity of vapor deposition can be improved.

[0410] For example, the inclination angle connecting the inflection point P2 and an arbitrary point P3 at the end of the second face hole V2 can be in the range of 30 degrees to 60 degrees. For example, the inclination angle connecting the inflection point P2 and an arbitrary point P3 at the end of the second face hole V2 can be in the range of 32 degrees to 38 degrees or 52 degrees to 58 degrees.

[0411] The inclination angle between an arbitrary point P1 at the end of the first face hole V1 and an arbitrary point P3 at the end of the second face hole V2 can be 70 degrees or less. For example, the inclination angle between an arbitrary point P1 at the end of the first face hole V1 and an arbitrary point P3 at the end of the second face hole V2 can be 60 degrees or less. For example, between an arbitrary point P1 at the end of the first face hole V1 and the end of the second face hole V2 ​​​​​​​The inclination angle between any point P3 and the deposition material can be 50 degrees or less. Accordingly, the deposition material may have an inclination angle that can well accommodate it.

[0412] The inclination angle θ2 of the deposition mask connecting the inflection point P2 and any point P1 at the end of the first face hole V1 can be 90 degrees or less. That is, since the width of the connecting portion may be larger than the width of the first face hole, the shadow region SA may not be included. This may vary depending on the deposition method. In the case of FIG. 22, since the evaporation source ( SOURCE) material for deposition during deposition and the deposition angle to this P1 point are large, it is easy when there is a possibility that the deposited material adheres to the P1 point. In the case of the embodiment of FIG. 31, the evaporation source (SOURCE)

[0413] material has a low adhesion force to the metal substrate, so it is easy when the deposited material and the metal substrate do not adhere at the P1 point. SOURCE) material for deposition during deposition and the deposition angle to this P1 point are large, it is easy when there is a possibility that the deposited material adheres to the P1 point. In the case of the embodiment of FIG. 31, the evaporation source (SOURCE) material has a low adhesion force to the metal substrate, so it is easy when the deposited material and the metal substrate do not adhere at the P1 point. material has a low adhesion force to the metal substrate, so it is easy when the deposited material and the metal substrate do not adhere at the P1 point. case.

[0414] The angle from the second face to the inflection point and the angle from the inflection point to the first face hole may each be 90 degrees or less. At this time, the angle from the second face to the inflection point may be even smaller than the angle from the inflection point to the first face hole. That is, the inclination angle θ2 of the deposition mask connecting the inflection point P2 and any point P1 at the end of the first face hole V1 may be even larger than the inclination angle θ1 connecting the inflection point P2 and any point P3 at the end of the second face hole V2. The angle from the second face to the inflection point and the angle from the inflection point to the first face hole may each be 90 degrees or less. At this time, the angle from the second face to the inflection point may be even smaller than the angle from the inflection point to the first face hole. That is, the inclination angle θ2 of the deposition mask connecting the inflection point P2 and any point P1 at the end of the first face hole V1 may be even larger than the inclination angle θ1 connecting the inflection point P2 and any point P3 at the end of the second face hole V2. The angle from the second face to the inflection point and the angle from the inflection point to the first face hole may each be 90 degrees or less. At this time, the angle from the second face to the inflection point may be even smaller than the angle from the inflection point to the first face hole. That is, the inclination angle θ2 of the deposition mask connecting the inflection point P2 and any point P1 at the end of the first face hole V1 may be even larger than the inclination angle θ1 connecting the inflection point P2 and any point P3 at the end of the second face hole V2. That is, the inclination angle θ2 of the deposition mask connecting the inflection point P2 and any point P1 at the end of the first face hole V1 is the inclination angle θ1 connecting the inflection point P2 and any point P3 at the end of the second face hole V2. may be even larger.

[0415] As an example, the metal surface layer may contain at least one element among Ni, Cr, Fe, Au, Mo, O, and Ti. For example, the metal plate of the deposition mask according to the embodiment is invar. As an example, the metal surface layer may contain at least one element among Ni, Cr, Fe, Au, Mo, O, and Ti. For example, the metal plate of the deposition mask according to the embodiment is invar. - By forming a Cr-containing surface layer or an O-containing surface layer on a metal plate, the etching rate on the surface can be slowed down, and the inclination angle between the inflection point and the first hole face can be formed to be 90 degrees or less.

[0416] The width of the second hole face is larger than the width of the inflection point, and the width of the inflection point may be larger than the width of the first hole face. Or, the width of the second hole face is larger than the width of the inflection point, and the width of the inflection point may correspond to the width of the first hole face. For example, the width of the first hole face and the width of the inflection point may be in a ratio of 0.5:1 to 1:1. Accordingly, the phenomenon that the deposition pattern emitted through the first hole face spreads can be prevented. The deposition mask according to the embodiment can provide a high-resolution and / or ultra-high-resolution display device by forming the width of the connecting portion to correspond to the width of the deposition pattern or by forming the width of the connecting portion to be larger than the deposition pattern. The deposition mask according to the embodiment may have a resolution of 800 PPI or more. The embodiment may not include the first hole face.

[0417] Referring to FIG. 32, when etching is performed only on one surface of the metal plate for the deposition mask, the second surface layer 120 may be included only on one surface of the base metal plate 100a. Accordingly, the embodiment can form a through hole including only the second hole face. The second hole face is in a form capable of accommodating the deposition material, and since an organic substance can be deposited on the width corresponding to the end of the second hole face, the phenomenon that the deposition material diffuses due to the thickness of the first hole face can be prevented.

[0418]

[0419]

[0420] ​ Accordingly, the vapor deposition mask according to the embodiment can improve the vapor deposition efficiency.

[0421] Therefore, the vapor deposition mask according to the embodiment can manufacture a high-resolution display device. .

[0422] Hereinafter, the present invention will be described in more detail through examples and comparative examples. Such examples are merely presented as examples for further explaining the present invention. Therefore, the present invention is not limited to such examples.

[0423] In Comparative Example 1, a photoresist layer was disposed on a 30-μm metal plate for a base vapor deposition mask, and wet etching was performed to form through holes.

[0424] In Comparative Example 2, the 30-μm metal plate for the base vapor deposition mask of Comparative Example 1 was etched with an acidic solution, and a photoresist layer was disposed on the base metal plate thinly processed to a thickness of 20 μm or less, and wet etching was performed to form through holes. In Example 1, a Ni metal surface layer was formed on the base metal plate of Comparative Example 2. A photoresist layer was disposed on the Ni-containing metal

[0425] surface layer, and wet etching was performed to form through holes. In Example 2, a Cr and Ni metal surface layer was formed on the base metal plate of Comparative Example 2. A photoresist layer was disposed on the metal surface layer containing a binary alloy of Cr and

[0426] Ni, and wet etching was performed to form through holes. In Example 3, an Fe and Ni metal surface layer was formed on the base metal plate of Comparative Example 2. A photoresist layer was disposed on the metal surface layer containing a binary alloy of Fe and Ni, and wet etching was performed to form through holes.

[0427] In Example 3, an Fe and Ni metal surface layer was formed on the base metal plate of Comparative Example 2. A photoresist layer was disposed on the metal surface layer containing a binary alloy of Fe and Ni, and wet etching was performed to form through holes. A through-hole was formed.

[0428] As described above, the surface layer can be removed after forming the through-hole through wet etching.

[0429] The width of the open area of the photoresist layer, the temperature of the etching solution, and the type of the etching solution in the comparative examples and the examples were the same, and the etching factor was measured. <Experimental Example 1: Adhesion of Photoresist Layer, Etching Factor, and Evaluation of Through-Hole Quality>

[0430]

Table 2

[0431] Table 2 shows the evaluation results of the adhesion of the photoresist layer, the etching factor, and the through-hole quality in the examples and the comparative examples. When no peeling of the photoresist layer occurred, it was indicated by ○.

[0432] When the size deviation between the maximum value and the minimum value of the diameter of the through-hole was within ±3 μm, it was indicated by ○. Specifically, when the size deviation of the hole adjacent to the reference hole was within ±3 μm, it was indicated by ○.

[0433]

[0434] Referring to Table 2, it can be confirmed that the etching factor of the metal surface layers of Examples 1 to 3 is improved to 1.2 or more by including at least one of the elements Ni, Cr, and Fe. It can be confirmed that the etching factor of the metal surface layers of Examples 1 to 3 is improved to 1.5 or more. It can be confirmed that the etching factor of the metal surface layers of Examples 1 to 3 is improved to 1.6 or more. ​​​​​​​The etching factor of the metal surface layer in Examples 1 to 3 is 2.0 or more. It can be seen that the metal surface layer of Examples 1 to 3 is made of nickel. The inclusion of a nickel layer or nickel-containing binary alloy increases the etching factor to 2.8 or more. It can be seen that the deposition mask according to the embodiment has a higher performance than the deposition mask according to the embodiment. The pitch of the through holes can be reduced. can form fine through-holes with excellent quality, which allows for ultra-high resolution It is possible to manufacture OLED panels of

[0435] The features, structures, advantages, etc. described in the above-described embodiments are included in at least one embodiment of the present invention. The present invention is not limited to only one embodiment. The features, structures, effects, etc. illustrated in the embodiments are within the ordinary skill in the art to which the embodiments pertain. The present invention can be combined or modified with other embodiments by those skilled in the art. Therefore, all such combinations and modifications are to be construed as being within the scope of the present invention. It should be.

[0436] Although the above description has been centered on the embodiment, this is merely an example and does not limit the present invention. It is understood that those skilled in the art will understand the essence of the present embodiment without departing from the spirit and scope of the present invention. Various modifications and applications not exemplified above are possible without departing from the essential characteristics of the present invention. For example, each component specifically shown in the embodiment may be modified and implemented. The differences related to such modifications and applications are described in the attached It should be construed as falling within the scope of the present invention as defined in the claims.

Claims

1. In metal plates used in the manufacture of deposition masks, Base metal plate; a first surface layer disposed on the first side of the base metal plate; and a second surface layer disposed on a second surface of the base metal plate opposite the first surface; The first surface layer and the second surface layer contain elements different from those of the base metal plate. or have different composition ratios, The etching rate of the base metal plate is determined by the etching rate of the first surface layer and the second surface layer. Metal plate with speed greater than 1000 rpm.

2. The metal plate according to claim 1, wherein the thickness of the metal plate is 5 μm to 50 μm. Board.

3. The thickness of the base metal plate is 15 μm to 30 μm. Metal plate on the board.

4. The thickness of the first surface layer is more than 5 nm and not more than 8500 nm; The second surface layer has a thickness of more than 5 nm and not more than 8500 nm. The metal plate described above.

5. The arithmetic mean of the base metal plate measured at the interface between the base metal plate and the surface layer. Roughness (Ra) is more than 50 nm, and ten-point average roughness (Rz) is more than 800 nm. The metal sheet of claim 1 , comprising:

6. The first surface layer and the second surface layer are made of Ni, Cr, Fe, Ti, Mn, O, Mo, A The present invention relates to a method for manufacturing a semiconductor device, comprising the steps of: Metal plate on the board.

7. The first surface layer and the second surface layer have a Cr ratio of 0.01% by weight to 24% by weight. The metal sheet of claim 6, including those in which:

8. The first surface layer and the second surface layer are made of Ni, Cr, Mo, Mn, Ti, Co, Cu, Fe, Au, Al, Mg, O, Ca, Cr, Si, Ti, Ag, Nb, V, In, Sb The metal plate according to claim 1 , comprising at least two of the above.

9. preparing a base metal plate; disposing a first surface layer on a first side of the base metal plate; disposing a second surface layer on a second side of the base metal plate; A first photoresist layer is disposed on the first surface layer, and a second photoresist layer is disposed on the second surface layer. forming a photoresist layer on which a resist layer is disposed; and Etching to form a through hole communicating between the first hole in the first surface and the second hole in the second surface a step of The etching step may include etching at least one of the first surface hole and the second surface hole. The etching factor of the hole calculated by the following formula 1 is 2.5 or more. Manufacturing method. <Formula 1> Etching Factor=B / A In the above formula, B is the surface of one of the first surface hole and the second surface hole that is etched. is the depth of the hole, In the above formula, A is the area extending from the bridge region on the one surface hole to the inside of the one surface hole. This refers to the width of the photoresist layer protruding toward the center.

10. The base metal plate further includes a step of reducing the thickness by a chemical or electrical method; The method for producing the deposition mask according to claim 9 .

11. The base metal plate after the step of reducing the thickness by the chemical or electrical method has a thickness of The method for producing a deposition mask according to claim 10 , wherein the thickness of the deposition mask is 20 μm or less.

12. The metal plate for a deposition mask includes a base metal plate having a first surface and a second surface facing each other; a first surface layer on one side; and a second surface layer on the second side; The metal plate for the deposition mask includes a deposition pattern region and a non-deposition region, and the deposition pattern the region includes a plurality of through holes; The deposition pattern area is divided into an effective area, an outer area, and a non-effective area. and a deposition mask in which a through hole is formed in the outer region.

13. a first surface layer and a second surface layer, the first surface layer and the second surface layer being connected to each other; The deposition mask according to claim 12 , comprising a first surface hole and a second surface hole.

14. The shape of the through hole at the corner of the outer region is different from the shape of the through hole in the effective region. Item 13. The deposition mask according to item 12.

15. The deposition mask includes a bridge region between each of the through holes, and the first surface layer and the second surface layer are The deposition mask of claim 12 , wherein a surface layer is disposed on the bridge region.

16. The deposition mask according to claim 12 , wherein the non-effective region includes a half-etched portion.

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