Laminated electronic component

Abstract

To provide a laminated electronic component with improved dielectric constant.SOLUTION: The laminated electronic component includes: a body including a dielectric layer 111 and internal electrodes 121, 122; and an external electrode arranged on the body. The dielectric layer includes a plurality of dielectric crystal grains 20. At least one of the plurality of dielectric crystal grains has a core-shell structure 10 including a core 11 and a shell 12 that surrounds at least a part of the core. A percentage of an average diameter of the core relative to an average thickness of the dielectric layer is 15% or more and 19% or less. The shell includes a rare earth element and tin (Sn). A sum of an average atomic percentage of the rare earth element in the shell and an average atomic percentage of the tin (Sn) in the shell is 0.8 at% or more and 1.2 at% or less.SELECTED DRAWING: Figure 5

Description

Technical Field

[0001] The present invention relates to a stacked electronic component.

Background Art

[0002] A multilayer ceramic capacitor (MLCC), which is one type of stacked electronic component, is a chip-type capacitor that is mounted on printed circuit boards of various electronic products such as video devices like liquid crystal display (LCD) devices and plasma display panel (PDP) panels, computers, smartphones, and mobile phones, and serves to charge or discharge electricity.

[0003] Such multilayer ceramic capacitors can be used as components of various electronic devices due to their advantages of being small in size while ensuring high capacitance and being easy to mount. As various electronic devices such as computers and mobile devices are miniaturized and have increased output power, the requirements for miniaturization and high capacitance of multilayer ceramic capacitors are increasing.

[0004] Generally, in order to achieve a large capacitance without increasing the volume of the MLCC, it is advantageous to make the dielectric layer and the internal electrodes that make up the MLCC thinner. However, as the dielectric layer becomes thinner, a negative effect of a decrease in high-temperature harsh reliability also appears. Therefore, in order to ensure both high capacitance and high reliability, a method is needed to prevent a decrease in reliability when thinning the dielectric layer.

[0005] One of the important factors in the reliability of the dielectric is the structure of the core and shell of the dielectric. Generally, since the shell region has a higher resistance than the core region, controlling the core and shell at an appropriate fraction is an important factor in improving the reliability of the MLCC.

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0007] One of the several problems to be solved by the present invention is to provide a multilayer electronic component with improved dielectric constant.

[0008] One of the several problems to be solved by the present invention is to provide a multilayer electronic component with improved mean time to failure (MTTF) under harsh conditions.

[0009] One of the several problems to be solved by the present invention is to prevent short circuits in multilayer electronic components under harsh conditions.

[0010] One of the several problems to be solved by the present invention is to improve the reliability of multilayer electronic components.

[0011] However, several problems to be solved by the present invention are not limited to the above-described content and can be more easily understood in the process of explaining specific embodiments of the present invention.

Means for Solving the Problems

[0012] A multilayer electronic component according to an embodiment of the present invention includes a main body including a dielectric layer and internal electrodes, and external electrodes disposed on the main body. The dielectric layer includes a plurality of dielectric crystal grains, at least one of the plurality of dielectric crystal grains has a core-shell structure including a core and a shell surrounding at least a part of the core, and a percentage of an average diameter of the core with respect to an average thickness of the dielectric layer is 15% or more and 19% or less. The shell includes a rare earth element and tin (Sn), and a total of an average atomic percentage of the rare earth element in the shell and an average atomic percentage of tin (Sn) in the shell can be 0.8 at% or more and 1.2 at% or less.

Advantages of the Invention

[0013] One of several effects of the present invention is to improve the dielectric constant of the multilayer electronic component.

[0014] One of several effects of the present invention is to improve the mean time to failure (MTTF) of the multilayer electronic component.

[0015] One of several effects of the present invention is to improve the reliability of the multilayer electronic component.

[0016] However, the various and beneficial advantages and effects of the present invention are not limited to the above-described content, and can be more easily understood in the process of describing specific embodiments of the present invention.

Brief Description of the Drawings

[0017]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Embodiments for Carrying out the Invention

[0018] Hereinafter, embodiments of the present invention will be described with reference to specific embodiments and the accompanying drawings. However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Also, the embodiments of the present invention are provided to more fully explain the present invention to ordinary technicians. Therefore, the shape, size, etc. of the elements in the drawings can be exaggerated for clearer explanation, and the elements indicated by the same reference numerals in the drawings are the same elements.

[0019] And, in order to clearly explain the present invention in the drawings, parts not related to the explanation are omitted, and the sizes and thicknesses of each configuration shown in the drawings are arbitrarily shown for convenience of explanation, so the present invention is not necessarily limited to what is shown in the drawings. Note that components having the same function within the scope of the same concept are described using the same reference numerals. Furthermore, throughout the specification, when a certain part says that a certain component "includes", this means that other components can be further included, rather than excluding other components, unless otherwise stated to the contrary.

[0020] In the drawings, the first direction can be defined as the stacking direction or the thickness T direction, the second direction as the length L direction, and the third direction as the width W direction.

[0021] Stacked electronic component FIG. 1 schematically shows a perspective view of a stacked electronic component according to an embodiment of the present invention, FIG. 2 schematically shows a separated perspective view showing the stacked structure of internal electrodes, FIG. 3 schematically shows a cross-sectional view taken along the line I-I' in FIG. 1, FIG. 4 schematically shows a cross-sectional view taken along the line II-II' in FIG. 1, FIG. 5 schematically shows an enlarged view of the P region in FIG. 3, and FIG. 6 schematically shows a part of an enlarged view of the P region in FIG. 5.

[0022] Hereinafter, with reference to FIGS. 1 to 6, a multilayer electronic component according to an embodiment of the present invention will be described in detail. However, although a multilayer ceramic capacitor will be described as an example of the multilayer electronic component, the present invention can also be applied to various electronic products using a dielectric composition, such as inductors, piezoelectric elements, varistors, or thermistors.

[0023] A multilayer electronic component 100 according to an embodiment of the present invention includes a main body 110 including dielectric layers 111 and internal electrodes 121 and 122, and external electrodes 131 and 132 disposed on the main body 110. The dielectric layer 111 includes a plurality of dielectric crystallites 10 and 20, and at least one of the plurality of dielectric crystallites 10 and 20 has a core-shell structure 10 including a core 11 and a shell 12 surrounding at least a part of the core 11. The average diameter L of the core with respect to the average thickness td of the dielectric layer 111 C is 15% or more and 19% or less, the shell 12 contains a rare earth element and tin (Sn), and the total of the average atomic percentage of the rare earth element in the shell 12 and the average atomic percentage of tin (Sn) in the shell 12 can be 0.8 at% or more and 1.2 at% or less.

[0024] The main body 110 may have the dielectric layers 111 and the internal electrodes 121 and 122 alternately laminated.

[0025] More specifically, the main body 110 can include a capacitance forming portion Ac that is disposed inside the main body 110 and includes a first internal electrode 121 and a second internal electrode 122 that are alternately disposed so as to face each other with the dielectric layer 111 interposed therebetween to form a capacitance.

[0026] There is no particular limitation on the specific shape of the main body 110. As shown in the drawing, the main body 110 can have a hexahedron shape or a shape similar thereto. Due to the shrinkage of the ceramic particles contained in the main body 110 during the firing process, the main body 110 does not have a perfect hexahedron shape with straight lines, but can have a substantially hexahedron shape.

[0027] The main body 110 can have a first surface 1 and a second surface 2 that face each other in a first direction, a third surface 3 and a fourth surface 4 that are connected to the first surface 1 and the second surface 2 and face each other in a second direction, and a fifth surface 5 and a sixth surface 6 that are connected to the first to fourth surfaces 1, 2, 3, 4 and face each other in a third direction.

[0028] The plurality of dielectric layers 111 forming the main body 110 are in a fired state, and the boundaries between adjacent dielectric layers 111 can be integrated to the extent that they are difficult to confirm without using a Scanning Electron Microscope (SEM).

[0029] The raw material for forming the dielectric layer 111 is not limited as long as sufficient capacitance can be obtained. Generally, perovskite (ABO 3 )-based materials can be used. For example, barium titanate-based materials, lead composite perovskite-based materials, or strontium titanate-based materials can be used. The barium titanate-based material can contain BaTiO 3 -based ceramic particles. As examples of the ceramic particles, BaTiO 3 , BaTiO 3 in which Ca (calcium), Zr (zirconium), etc. are partially solid-solved (Ba 1-x Ca x )TiO 3 (0 < x < 1), Ba(Ti 1-y Ca y )O 3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O 3 (0 < x < 1, 0 < y < 1) or Ba(Ti 1-y Zr y )O 3 (0 < y < 1), etc. can be mentioned.

[0030] Also, the raw material for forming the dielectric layer 111 is barium titanate (BaTiO 3To particles such as , various additives, organic solvents, binders, dispersants, etc. can be added according to the purpose of the present invention. For example, the additive can contain rare earth elements and tin (Sn), and the rare earth element can contain at least one of dysprosium (Dy) and terbium (Tb), but is not particularly limited thereto.

[0031] On the other hand, since the dielectric layer 111 can be formed using a dielectric material such as barium titanate (BaTiO 3 ), it can contain a dielectric microstructure after firing. The dielectric microstructure can include a plurality of dielectric crystallites, dielectric crystal boundaries disposed between the adjacent dielectric crystallites, and triple points disposed at points where three or more of the dielectric crystal boundaries meet, and can include a plurality of each.

[0032] Here, at least one of the plurality of dielectric crystallites can have a core-shell structure 10 including a core 11 and a shell 12 surrounding at least a part of the core 11. In other words, the plurality of dielectric crystallites 10, 20 can include dielectric crystallites 10 having a core-shell structure and dielectric crystallites 20 not having a core-shell structure. More specific content will be described later.

[0033] The thickness td of the dielectric layer 111 does not need to be particularly limited.

[0034] However, in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component, the thickness td of the dielectric layer 111 may be 0.8 μm or less.

[0035] Here, the thickness td of the dielectric layer 111 can mean the thickness td of the dielectric layer 111 disposed between the first and second internal electrodes 121, 122.

[0036] On the one hand, the thickness td of the dielectric layer 111 can represent the size of the dielectric layer 111 in the first direction. Also, the thickness td of the dielectric layer 111 can represent the average thickness td of the dielectric layer 111, and can represent the average size of the dielectric layer 111 in the first direction.

[0037] The average size of the dielectric layer 111 in the first direction can be measured by scanning an image of the cross-sections of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the average size of one dielectric layer 111 in the first direction can represent the average value calculated by measuring the size in the first direction at 10 equally spaced points in the second direction of one dielectric layer 111 in the scanned image. The 10 equally spaced points can be specified by the capacitance forming portion Ac. Also, when such measurement of the average value is extended to 10 dielectric layers 111 to measure the average value, the average size of the dielectric layer 111 in the first direction can be further generalized.

[0038] The internal electrodes 121 and 122 may be alternately laminated with the dielectric layer 111.

[0039] The internal electrodes 121 and 122 can include a first internal electrode 121 and a second internal electrode 122. The first and second internal electrodes 121 and 122 are alternately arranged so as to face each other with the dielectric layer 111 constituting the main body 110 interposed therebetween, and can be respectively exposed on the third and fourth surfaces 3 and 4 of the main body 110.

[0040] More specifically, the first internal electrode 121 can be spaced apart from the fourth surface 4 and exposed through the third surface 3, and the second internal electrode 122 can be spaced apart from the third surface 3 and exposed through the fourth surface 4. A first external electrode 131 can be arranged on the third surface 3 of the main body 110 and connected to the first internal electrode 121, and a second external electrode 132 can be arranged on the fourth surface 4 of the main body 110 and connected to the second internal electrode 122.

[0041] That is, the first internal electrode 121 is not connected to the second external electrode 132 but can be connected to the first external electrode 131, and the second internal electrode 122 is not connected to the first external electrode 131 but can be connected to the second external electrode 132. At this time, the first and second internal electrodes 121 and 122 can be electrically separated from each other by the dielectric layer 111 disposed therebetween.

[0042] On the other hand, the main body 110 can be formed by alternately laminating a ceramic green sheet on which the first internal electrode 121 is printed and a ceramic green sheet on which the second internal electrode 122 is printed, and then firing them.

[0043] The materials for forming the internal electrodes 121 and 122 are not particularly limited, and materials having excellent electrical conductivity can be used. For example, the internal electrodes 121 and 122 can include one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0044] Also, the internal electrodes 121 and 122 can be formed by printing a conductive paste for internal electrodes containing one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof on a ceramic green sheet. As the printing method of the conductive paste for internal electrodes, a screen printing method, a gravure printing method, or the like can be used, but the present invention is not limited thereto.

[0045] On the other hand, the thickness te of the internal electrodes 121 and 122 does not need to be particularly limited.

[0046] However, in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component, the thickness of the internal electrodes 121 and 122 may be 1.0 μm or less, preferably 0.6 μm or less, and more preferably 0.4 μm or less.

[0047] Here, the thickness te of the internal electrodes 121 and 122 can represent the size of the internal electrodes 121 and 122 in the first direction. Also, the thickness te of the internal electrodes 121 and 122 can represent the average thickness te of the internal electrodes 121 and 122, and can represent the average size of the internal electrodes 121 and 122 in the first direction.

[0048] The average size of the internal electrodes 121 and 122 in the first direction can be measured by scanning an image of the cross-sections of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the average size of one internal electrode in the first direction can be the average value calculated by measuring the size of one internal electrode in the first direction at 10 equally spaced points in the second direction in the scanned image. The 10 equally spaced points can be specified in the capacitance forming portion Ac. Also, when such measurement of the average value is extended to the 10 internal electrodes 121 and 122 to measure the average value, the average size of the internal electrodes 121 and 122 in the first direction can be further generalized.

[0049] On the other hand, the main body 110 can include cover portions 112 and 113 disposed on both end-surfaces of the capacitance forming portion Ac in the first direction.

[0050] Specifically, it can include a first cover portion 112 disposed on one surface of the capacitance forming portion Ac in the first direction, and a second cover portion 113 disposed on the other surface of the capacitance forming portion Ac in the first direction. More specifically, it can include an upper cover portion 112 disposed on the upper portion of the capacitance forming portion Ac in the first direction, and a lower cover portion 113 disposed on the lower portion of the capacitance forming portion Ac in the first direction.

[0051] The upper cover portion 112 and the lower cover portion 113 can be formed by laminating a single dielectric layer 111 or two or more dielectric layers 111 in the first direction on the upper and lower surfaces of the capacitance forming portion Ac, and can basically serve to prevent damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0052] The upper cover portion 112 and the lower cover portion 113 do not include the internal electrodes 121 and 122 and can contain the same material as the dielectric layer 111. That is, the upper cover portion 112 and the lower cover portion 113 can contain a ceramic material, for example, barium titanate (BaTiO 3 )-based ceramic material can be included.

[0053] On the other hand, the thickness tc of the cover portions 112 and 113 does not need to be particularly limited.

[0054] However, in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component, the thickness tc of the cover portions 112 and 113 may be 100 μm or less, preferably 30 μm or less, and in the case of ultra-small products, more preferably 20 μm or less.

[0055] Here, the thickness tc of the cover portions 112 and 113 can mean the size of the cover portions 112 and 113 in the first direction. Also, the thickness tc of the cover portions 112 and 113 can mean the average thickness tc of the cover portions 112 and 113 and can mean the average size of the cover portions 112 and 113 in the first direction.

[0056] The average size of the cover portions 112 and 113 in the first direction can be measured by scanning an image of the cross-sections of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, in an image obtained by scanning one cover portion, it can be the average value calculated by measuring the sizes in the first direction at 10 points equally spaced in the second direction.

[0057] Note that the average size of the cover portion in the first direction measured by the above-described method can have substantially the same size as the average size of the cover portion in the first direction based on the cross-sections of the main body 110 in the first and third directions.

[0058] On the other hand, side margin portions 114 and 115 may be disposed on both end-surfaces of the main body 110 in the third direction.

[0059] More specifically, the side margin portions 114 and 115 can include a first side margin portion 114 disposed on the fifth surface 5 of the main body 110 and a second side margin portion 115 disposed on the sixth surface 6. That is, the side margin portions 114 and 115 may be disposed on both end - surfaces in the third direction of the main body 110.

[0060] As shown in the figure, the side margin portions 114 and 115 can mean the regions between the interfaces of both ends in the third direction of the first and second internal electrodes 121 and 122 and the main body 110, based on the cross - sections of the main body 110 in the first and third directions.

[0061] The side margin portions 114 and 115 can basically play a role in preventing damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0062] Except for the locations where the side margin portions 114 and 115 are formed on the ceramic green sheet, a conductive paste is applied to form the internal electrodes 121 and 122. In order to suppress the step caused by the internal electrodes 121 and 122, after cutting so that the internal electrodes 121 and 122 after lamination are exposed on the fifth and sixth surfaces 5 and 6 of the main body 110, the single dielectric layer 111 or two or more dielectric layers 111 can also be laminated in the third direction on both end - surfaces in the third direction of the capacitance forming portion Ac.

[0063] The first side margin portion 114 and the second side margin portion 115 do not include the internal electrodes 121 and 122 and can include the same material as the dielectric layer 111. That is, the first side margin portion 114 and the second side margin portion 115 can include a ceramic material, for example, a barium titanate (BaTiO 3 ) - based ceramic material.

[0064] On the one hand, the widths wm of the first and second side margin portions 114 and 115 do not need to be particularly limited.

[0065] However, in order to more easily achieve miniaturization and high capacity of the stacked electronic component 100, the widths wm of the first and second side margin portions 114 and 115 may be 100 μm or less, preferably 30 μm or less, and in the case of ultra-small products, more preferably 20 μm or less.

[0066] Here, the width wm of the side margin portions 114 and 115 can mean the size of the side margin portions 114 and 115 in the third direction respectively. Also, the width wm of the side margin portions 114 and 115 can mean the average width wm of the side margin portions 114 and 115, and can mean the average size of the side margin portions 114 and 115 in the third direction.

[0067] The average size of the side margin portions 114 and 115 in the third direction can be measured by scanning an image of the cross-section of the main body 110 in the first and third directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, in the image obtained by scanning one side margin portion, it can mean the average value calculated by measuring the sizes in the third direction at 10 equally spaced points in the first direction.

[0068] In one embodiment of the present invention, the structure in which the ceramic electronic component 100 has two external electrodes 131 and 132 is described, but the number, shape, etc. of the external electrodes 131 and 132 can be changed according to the form of the internal electrodes 121 and 122 and other purposes.

[0069] The external electrodes 131 and 132 are disposed on the main body 110 and can be connected to the internal electrodes 121 and 122.

[0070] More specifically, the external electrodes 131 and 132 can be respectively disposed on the third and fourth surfaces 3 and 4 of the main body 110 and include first and second external electrodes 131 and 132 respectively connected to the first and second internal electrodes 121 and 122. That is, the first external electrode 131 can be disposed on the third surface 3 of the main body and connected to the first internal electrode 121, and the second external electrode 132 can be disposed on the fourth surface 4 of the main body and connected to the second internal electrode 122.

[0071] In addition, the external electrodes 131 and 132 can extend and be disposed on a part of the first and second surfaces 1 and 2 of the main body 110, or can extend and be disposed on a part of the fifth and sixth surfaces 5 and 6 of the main body 110. That is, the first external electrode 131 can be disposed on a part of the first, second, fifth, and sixth surfaces 1, 2, 5, and 6 of the main body 110 and on the third surface 3 of the main body 110, and the second external electrode 132 can be disposed on a part of the first, second, fifth, and sixth surfaces 1, 2, 5, and 6 of the main body 110 and on the third surface 3 of the main body 110.

[0072] The external electrodes 131 and 132 can be formed of any material as long as it has electrical conductivity, such as metal. A specific material may be determined in consideration of electrical characteristics, structural stability, etc., and it may further have a multilayer structure.

[0073] For example, the external electrodes 131 and 132 can include electrode layers 131a and 132a disposed on the main body 110 and plating layers 131b and 132b disposed on the electrode layers 131a and 132a.

[0074] More specific examples of the electrode layers 131a and 132a are that the electrode layers 131a and 132a may be fired electrodes including conductive metal and glass, or resin-based electrodes including conductive metal and resin.

[0075] In addition, the electrode layers 131a and 132a may be in a form in which a fired electrode and a resin-based electrode are sequentially formed on the main body 110.

[0076] Alternatively, the electrode layers 131a and 132a may be formed by a method of transferring a sheet containing a conductive metal onto the main body 110, or may be formed by a method of transferring a sheet containing a conductive metal onto a fired electrode.

[0077] The conductive metal used for the electrode layers 131a and 132a is not particularly limited as long as it can be electrically connected to the internal electrodes 121 and 122 for forming capacitance. For example, it can include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof. The electrode layers 131a and 132a can be formed by applying a conductive paste provided by adding glass frit to the conductive metal particles and then firing.

[0078] The plating layers 131b and 132b can play a role in improving the mounting characteristics.

[0079] The types of the plating layers 131b and 132b are not particularly limited, and may be single-layer plating layers 131b and 132b containing one or more of nickel (Ni), tin (Sn), silver (Ag), palladium (Pd), and alloys thereof, or may be composed of multiple layers.

[0080] More specific examples of the plating layers 131b and 132b are as follows. The plating layers 131b and 132b may be Ni plating layers or Sn plating layers, or may be in a form where a Ni plating layer and an Sn plating layer are sequentially formed on the electrode layers 131a and 132a, or may be in a form where an Sn plating layer, a Ni plating layer, and an Sn plating layer are sequentially formed. Also, the plating layers 131b and 132b may include multiple Ni plating layers and / or multiple Sn plating layers.

[0081] The size of the multilayer electronic component 100 does not need to be particularly limited.

[0082] However, in order to simultaneously achieve miniaturization and high capacity, the thicknesses of the dielectric layer and the internal electrodes must be reduced and the number of layers increased. Therefore, in a multilayer electronic component 100 having a size of 1005 (length × width: 1.0 mm × 0.5 mm) or less, more specifically a size of 0603 (length × width: 0.6 mm × 0.3 mm) or less, the effects of the present invention can become more prominent.

[0083] Hereinafter, an embodiment of the present invention will be described more specifically.

[0084] In a multilayer electronic component 100 according to an embodiment of the present invention, the dielectric layer 111 includes a plurality of dielectric crystallites 10, 20, and at least one of the plurality of dielectric crystallites 10, 20 has a core-shell structure 10 including a core 11 and a shell 12 surrounding at least a part of the core 11. The average diameter L of the core 11 with respect to the average thickness td of the dielectric layer 111 C can be 15% or more and 19% or less. At this time, the shell 12 contains a rare earth element and tin (Sn), and the total of the average atomic percentage of the rare earth element in the shell 12 and the average atomic percentage of tin (Sn) in the shell 12 can be 0.8 at% or more and 1.2 at% or less.

[0085] The average diameter L of the core 11 with respect to the average thickness td of the dielectric layer 111 C satisfies 15% or more and 19% or less, and when the total of the average atomic percentage of the rare earth element in the shell 12 and the average atomic percentage of tin (Sn) in the shell 12 satisfies 0.8 at% or more and 1.2 at% or less, the dielectric constant, the improvement of the mean time to failure (MTTF) under severe conditions, and the occurrence of a short circuit can be prevented, and the reliability of the multilayer electronic component can be improved.

[0086] In the present invention, as an example of a more specific method for measuring the content of elements included in each component of the stacked electronic component 100, in the case of a destructive method, the components can be analyzed using the energy dispersive X-ray spectroscopy (EDS) mode of a scanning electron microscope (SEM), the EDS mode of a transmission electron microscope (TEM), or the EDS mode of a scanning transmission electron microscope (STEM). First, in the region to be measured, a thin-sectioned analysis sample is prepared using a focused ion beam (FIB) equipment. Then, for the thin-sectioned sample, the surface damage layer is removed using xenon (Xe) or argon (Ar) ion milling, and thereafter, each component to be measured is mapped using an image obtained by SEM-EDS, TEM-EDS, or STEM-EDS for qualitative / quantitative analysis. In this case, the qualitative / quantitative analysis graph of each component can also be expressed by converting it into the mass percentage (wt%), atomic percentage (at%), or molar percentage (mol%) of each element. At this time, the molar number of one specific component with respect to the molar number of another specific component can be converted and expressed.

[0087] As yet another method, the chip is pulverized to select the region to be measured, and for the portion containing the dielectric microstructure thus selected, the components of the corresponding region can be analyzed using an apparatus such as an inductively coupled plasma optical emission spectrometer (ICP-OES) or an inductively coupled plasma mass spectrometer (ICP-MS).

[0088] In the present invention, the atomic percentage of a specific component in a certain region can mean the average atomic percentage of the specific component in the region, and can mean the average value of the atomic percentages of the specific component at a plurality of points measured by EDS. For example, the atomic percentage of tin (Sn) in the core means the average atomic percentage of tin (Sn) in the core region, and the atomic percentage of tin (Sn) in the shell can mean the average atomic percentage of tin (Sn) in the shell region.

[0089] In the present invention, the method for distinguishing the core 11 and the shell 12 is, for example, when observing the components in the cross-sections in the first and second directions at the center in the third direction of the main body 110 including the dielectric layer 111 using the SEM-EDS, TEM-EDS, or STEM-EDS mode, a region in the cross-section of the dielectric layer 111 where the content of the rare earth element is 0 at% or more and less than 0.2 at% can be defined as the core 11, and a region where the content of the rare earth element is 0.2 at% or more can be defined as the shell 12.

[0090] The average diameter L of the core 11 with respect to the average thickness td of the dielectric layer 111 C Regarding the percentage condition, referring to FIGS. 5 and 6 for more specific explanation, the average thickness td of the dielectric layer 111 can mean the average size td in the first direction of any one dielectric layer 111 including the dielectric crystal grains 10 of the core-shell structure, and the average diameter L of the core 11 C can mean the size in the first direction of the straight line passing through the center of the core 11 of the dielectric crystal grains 10 of the core-shell structure included in any one dielectric layer 111. At this time, when it is difficult to measure the size in the first direction of the straight line passing through the center of the core 11, after calculating the area of the core 11 and converting it into a virtual circle, the diameter of the virtual circle can be defined as the average diameter L of the core 11 C but is not particularly limited thereto.

[0091] The average diameter L of the core 11 with respect to the average thickness td of the dielectric layer 111 CIf the percentage is less than 15%, there is a risk of poor reliability under harsh conditions, and the average diameter L of the core 11 with respect to the average thickness td of the dielectric layer 111 C If the percentage exceeds 19%, there is a risk of poor reliability under harsh conditions, and there is a risk of more easily occurring short circuits during voltage application.

[0092] Here, the average thickness td of the dielectric layer 111 is 0.8 μm or less, and the average diameter L of the core 11 C is 70 nm or more and 120 nm, the improvement effects of the dielectric constant, the mean time to failure (MTTF) under harsh conditions, and short circuits according to the present invention can become more remarkable.

[0093] The lower limit value of the average thickness td of the dielectric layer 111 is not particularly limited, but it may preferably be 0.3 μm or more, and more preferably 0.4 μm or more.

[0094] When the average thickness td of the dielectric layer 111 exceeds 0.8 μm, the dielectric constant may decrease or the reliability under harsh conditions may decrease. When the average thickness td of the dielectric layer 111 is less than 0.3 μm, the breakdown voltage (BDV) may decrease due to the ultra-thin layer of the dielectric layer 111.

[0095] The average diameter L of the core 11 C If it is less than 70 nm, the dielectric constant may decrease. The average diameter L of the core 11 C If it exceeds 120 nm, the reliability under harsh conditions may decrease.

[0096] On the other hand, if the total of the average atomic percentage of the rare earth element in the shell 12 and the average atomic percentage of tin (Sn) in the shell 12 is less than 0.8 at%, the reliability under harsh conditions may decrease. If the total of the average atomic percentage of the rare earth element in the shell 12 and the average atomic percentage of tin (Sn) in the shell 12 exceeds 1.2 at%, the dielectric constant may decrease.

[0097] The rare earth element of shell 12 is not particularly limited, but may contain at least one of dysprosium (Dy) and terbium (Tb), preferably one of dysprosium (Dy) and terbium (Tb), and more preferably dysprosium (Dy).

[0098] On the other hand, the average atomic percentage of the rare earth element in shell 12 may be 0.2 at% or more and 0.7 at% or less, and the average atomic percentage of tin (Sn) in shell 12 may be 0.2 at% or more and 1.0 at% or less.

[0099] When the average atomic percentage of the rare earth element in shell 12 is less than 0.2 at%, it may not be easy to measure the rare earth element, or it may be difficult to distinguish from core 11, and the reliability may decrease. When the average atomic percentage of the rare earth element in shell 12 exceeds 0.7 at%, the insulation resistance (IR) or breakdown voltage (BDV) may decrease due to the decrease in dispersibility, or the reliability may decrease.

[0100] When the average atomic percentage of tin (Sn) in shell 12 is less than 0.2 at%, the reliability may decrease due to the decrease in grain boundary resistance. When the average atomic percentage of tin (Sn) in shell 12 exceeds 1.0 at%, the grain growth of the dielectric crystal grains may be suppressed and the dielectric constant may decrease.

[0101] The average atomic percentage of the rare earth element in core 11 may be 0 at% or more and less than 0.2 at%, the average atomic percentage of tin in core 11 may be 0 at% or more and less than 0.2 at%, and the sum of the average atomic percentage of the rare earth element in core 11 and the average atomic percentage of tin (Sn) in core 11 may be 0 at% or more and less than 0.4 at%.

[0102] When the average atomic percentage of the rare earth element in the core 11 is 0.2 at% or more, it may be difficult to distinguish from the shell 12, or the dielectric constant may decrease. When the average atomic percentage of tin in the core 11 is 0.2 at% or more, the dielectric constant may decrease. When the total of the average atomic percentage of the rare earth element in the core 11 and the average atomic percentage of tin (Sn) in the core 11 is 0.4 at% or more, the dielectric constant may decrease or the reliability may decrease.

[0103] Hereinafter, the present invention will be described in more detail with reference to examples. However, this is for helping the specific understanding of the present invention, and the scope of the present invention is not limited by the examples.

[0104] (Examples) Hereinafter, the percentage of the average diameter L of the core with respect to the average thickness td of the dielectric layer C and test examples based on the total of the average atomic percentage of the rare earth element in the shell and the average atomic percentage of tin (Sn) in the shell were each prepared with 10,000 samples of a size of 0603 (length × width: 0.6 mm × 0.3 mm) or less. After measuring the dielectric constant, the mean time to failure (MTTF) under severe conditions, and the short circuit rate (short), they are shown in [Table 1] to [Table 3].

[0105] L C (nm) means the average diameter of the core of the dielectric crystal grains having a core-shell structure. For the cross-section of the dielectric layer, after obtaining an image obtained by mapping the components of dysprosium (Dy) and tin (Sn) in the EDS mode of a transmission electron microscope (TEM), a region where the atomic percentage of dysprosium (Dy) is less than 0.2 at% was defined as the core, and then the size (or length) in the first direction of the straight line passing through the center of the core was measured and described. The unit is nanometer (nm).

[0106] Dy + Sn (at%) is the average diameter L of the core described above CIt describes the total of the average atomic percentage of dysprosium (Dy) in the shell and the average atomic percentage of tin (Sn) in the shell in the measured dielectric crystal grains with a core-shell structure, and the unit is mole (mol). Here, the average atomic percentage of dysprosium (Dy) and tin (Sn) in the shell respectively means the average atomic percentage of dysprosium (Dy) and tin (Sn) in the shell.

[0107] Td (nm) is the average diameter L of the core C It describes the average thickness (or the average size in the first direction) of the dielectric layer containing the measured dielectric crystal grains with a core-shell structure, and the unit is nanometer (nm).

[0108] L C / td (%) is the ratio of the above-mentioned L C and the value of td expressed as a percentage.

[0109] The dielectric constant was measured using an LCR meter. When the dielectric constant is 3300 or more, it is evaluated as excellent, and when the dielectric constant is less than 3300, it is evaluated as defective.

[0110] MTTF (hrs) describes the average value of the time until the resistance of the sample decreases and the measurement of the resistance becomes impossible when, in a highly accelerated life test (HALT), for 40 samples per example, a voltage of 22.91 V / μm per unit thickness of the dielectric layer is applied at a temperature of 125°C, and the unit is time (hrs). When MTTF is 70 hours or more, it is evaluated as excellent, and when MTTF is less than 70 hours, it is evaluated as defective.

[0111] The short-circuit rate (%) represents the percentage of the number of chips among 100 samples after sample production for which the target capacitance and dissipation factor (DF) are not achieved. When the short-circuit rate is less than 10%, it is evaluated as excellent, and when the short-circuit rate is 10% or more, it is evaluated as defective.

[0112] In the case of (characteristic) evaluation, when all of the permittivity is 3300 or more, the MTTF is 70 hours or more, and the short-circuit rate is less than 10%, it is described as "O", and when any one of these conditions is not satisfied, it is described as "X".

[0113]

Table 1

[0114]

Table 2

[0115]

Table 3

[0116] As shown in [Table 1] to [Table 3], the percentage value of the average diameter L of the core with respect to the average thickness td of the dielectric layer C is 15% or more and 19% or less, and when the total of the average atomic percentage of dysprosium (Dy) in the shell and the average atomic percentage of tin (Sn) in the shell is 0.8 at% or more and 1.2 at% or less, all of the permittivity, MTTF, and short-circuit rate characteristics are excellent. On the other hand, when the percentage value of the average diameter L of the core with respect to the average thickness td of the dielectric layer C does not satisfy 15% or more and 19% or less, or when the total of the average atomic percentage of dysprosium (Dy) in the shell and the average atomic percentage of tin (Sn) in the shell does not satisfy 0.8 at% or more and 1.2 at% or less, it can be seen that at least one of the permittivity, MTTF, and short-circuit rate characteristics is poor.

[0117] From this, it can be seen that when the percentage value of the average diameter L of the core with respect to the average thickness td of the dielectric layer C is 15% or more and 19% or less, and the total of the average atomic percentage of dysprosium (Dy) in the shell and the average atomic percentage of tin (Sn) in the shell is 0.8 at% or more and 1.2 at% or less, both the permittivity and reliability of the multilayer electronic component are excellent.

[0118] As described above, the embodiments of the present invention have been described in detail. However, the present invention is not limited by the above-described embodiments and the accompanying drawings, but is limited by the appended claims. Therefore, various forms of substitution, modification, and change are possible by those having ordinary knowledge in the art without departing from the technical idea of the present invention described in the claims, and it can be said that these also belong to the scope of the present invention.

[0119] In addition, the expression "one embodiment" used in this specification does not mean the same embodiment, but is provided to emphasize and explain each different unique feature. However, it does not exclude that the above-presented one embodiment can be implemented in combination with the features of another one embodiment. For example, even if the matter described in a specific one embodiment is not described in another one embodiment, it can be understood as an explanation related to another one embodiment as long as there is no explanation contrary to or conflicting with that matter in another one embodiment.

[0120] The terms used in this specification are merely used to explain one embodiment and are not intended to limit the present invention. At this time, the singular expression includes plural expressions unless the context clearly indicates a different meaning.

Explanation of Reference Numerals

[0121] 10: Dielectric crystal grains with a core-shell structure 11: Core 12: Shell 20: Dielectric crystal grains 100: Multilayer electronic component 110: Body 111: Dielectric layer 112, 113: Cover part 114, 115: Side margin part 121, 122: Internal electrode 131, 132: External electrode

Claims

1. a body including a dielectric layer and an internal electrode; an external electrode disposed on the body; the dielectric layer includes a plurality of dielectric crystal grains, at least one of the plurality of dielectric crystal grains having a core-shell structure including a core and a shell surrounding at least a portion of the core; the percentage of the average diameter of the core to the average thickness of the dielectric layer is 15% or more and 19% or less; The shell contains a rare earth element and tin (Sn), and the sum of the average atomic percentage of the rare earth element in the shell and the average atomic percentage of tin (Sn) in the shell is 0.8 at% or more and 1.2 at% or less.

2. 2. The multilayer electronic component according to claim 1, wherein an average atomic percentage of the rare earth element in the shell is 0.2 at % or more and 0.7 at % or less.

3. 2. The multilayer electronic component according to claim 1, wherein the average atomic percentage of tin (Sn) in the shell is 0.2 at% or more and 1.0 at% or less.

4. 2. The multilayer electronic component according to claim 1, wherein the average thickness of said dielectric layers is 0.8 μm or less.

5. 2. The multilayer electronic component according to claim 1, wherein the average diameter of the core is 70 nm or more and 120 nm or less.

6. 2. The multilayer electronic component according to claim 1, wherein an average atomic percentage of the rare earth element in said core is equal to or greater than 0 at % and less than 0.2 at %.

7. 2. The multilayer electronic component according to claim 1, wherein an average atomic percentage of tin (Sn) in the core is equal to or greater than 0 at % and less than 0.2 at %.

8. 2. The multilayer electronic component according to claim 1, wherein a sum of an average atomic percentage of rare earth elements in the core and an average atomic percentage of tin (Sn) in the core is equal to or greater than 0 at % and less than 0.4 at %.

9. The dielectric layer is made of barium titanate (BaTiO ３ 2. The multilayer electronic component according to claim 1, comprising a polysilicon-based material as a main component.

10. 2. The multilayer electronic component according to claim 1, wherein the rare earth element includes at least one of dysprosium (Dy) and terbium (Tb).

11. 2. The multilayer electronic component according to claim 1, wherein the internal electrodes have an average thickness of 0.6 μm or less.

12. 2. The multilayer electronic component according to claim 1, wherein the length of the multilayer electronic component is 0.6 mm or less and the width of the multilayer electronic component is 0.3 mm or less.

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