Film forming apparatus

Abstract

To improve the uniformity in thickness of an organic film formed on a substrate.SOLUTION: A film forming apparatus includes a process chamber, a stage, a heat shielding member, a gas supply unit, a first heater, and a second heater. The stage is accommodated inside the process chamber, and a substrate is placed thereon. The heat shielding member has a plurality of through holes and is arranged above the stage so as to cover the substrate placed on the stage. The gas supply unit supplies a gas of a first monomer and a gas of a second monomer into the process chamber and forms an organic film of a polymer on the substrate by a polymerization reaction of the first monomer and the second monomer. The first heater heats a side wall of the process chamber to a first temperature. The second heater heats the stage to a second temperature which is lower than the first temperature. At the time when the organic film of the polymer is formed on the substrate, the heat shielding member comes into contact with the stage and does not come into contact with the process chamber.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] Various aspects and embodiments of the present disclosure relate to a film forming apparatus.

Background Art

[0002] For example, Patent Document 1 below discloses "a film forming apparatus for forming a polymer film on a substrate to be processed by vapor deposition polymerization, comprising a stage, a stage heater, a top plate heater, and a control device. The stage is provided in a processing container for accommodating the substrate to be processed, and the substrate to be processed is placed thereon. The stage heater is provided in the stage and heats the substrate to be processed placed on the stage. The top plate heater is provided on the top plate of the processing container facing the stage. The control device controls the temperatures of the stage heater and the top plate heater. Further, the control device controls the temperature of the substrate to be processed in a first temperature unit by controlling the temperature of the stage heater in the first temperature unit. Further, the control device controls the temperature of the top plate heater in a second temperature unit, and controls the temperature of the substrate to be processed in a temperature unit finer than the first temperature unit by the radiant heat radiated through the top plate."

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a film forming apparatus capable of improving the uniformity of the thickness of an organic film formed on a substrate.

Means for Solving the Problems

[0005] One aspect of the present disclosure is a film forming apparatus, which includes a processing chamber, a stage, a heat insulating member, a gas supply unit, a first heater, and a second heater. The stage is housed in the processing chamber and a substrate is placed thereon. The heat insulating member has a plurality of through holes and is disposed above the stage so as to cover the substrate placed on the stage. The gas supply unit supplies a gas of a first monomer and a gas of a second monomer into the processing chamber, and forms a polymer organic film on the substrate by a polymerization reaction of the first monomer and the second monomer. The first heater heats the side wall of the processing chamber to a first temperature. The second heater heats the stage to a second temperature lower than the first temperature. The heat insulating member contacts the stage and does not contact the processing chamber when a polymer organic film is formed on the substrate.

Advantages of the Invention

[0006] According to various aspects and embodiments of the present disclosure, the uniformity of the thickness of the organic film formed on the substrate can be improved.

Brief Description of the Drawings

[0007]

Figure 1

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Figure 11

Embodiments for Carrying Out the Invention

[0008] Hereinafter, embodiments of the film forming apparatus disclosed will be described in detail with reference to the drawings. Note that the film forming apparatus disclosed is not limited by the following embodiments.

[0009] By the way, in vapor deposition polymerization, the film formation rate varies greatly depending on the temperature of the substrate. Therefore, in order to make the film thickness of the polymer to be formed uniform, it is required to make the temperature distribution of the substrate more uniform.

[0010] Therefore, the present disclosure provides a technique capable of improving the uniformity of the thickness of the organic film formed on the substrate.

[0011] [Configuration of Film Forming Apparatus 1] FIG. 1 is a schematic cross-sectional view showing an example of a film forming apparatus 1 according to an embodiment of the present disclosure. The film forming apparatus 1 in the present embodiment forms a polymer organic film on a substrate W by vapor deposition polymerization using a plurality of types of monomers. The film forming apparatus 1 includes an apparatus main body 10 and a control device 100 that controls the apparatus main body 10. The apparatus main body 10 includes a processing container 11 that houses the substrate W.

[0012] The processing container 11 includes a lower container 12 and an exhaust duct 13 formed of a metal such as aluminum. The lower container 12 constitutes the lower part of the processing container 11. The lower container 12 is grounded. Side wall heaters 121a to 121c are embedded in the side wall of the lower container 12. By heating the side wall of the lower container 12 to a temperature of around 150°C, for example, by the side wall heaters 121a to 121c, the adhesion of reaction by-products to the side wall of the lower container 12 is suppressed. The temperature of around 150°C is an example of the first temperature. An opening 120 for loading and unloading the substrate W is formed in the side wall of the lower container 12. The opening 120 is opened and closed by a gate valve G.

[0013] The exhaust duct 13 is provided above the lower container 12 and constitutes a part of the side wall of the processing container 11. In the present embodiment, the exhaust duct 13 has a hollow rectangular cross-section and is configured to be curved annularly along the upper part of the lower container 12. A slit-shaped exhaust port 130 is formed in the exhaust duct 13 along the extending direction of the exhaust duct 13. The exhaust port 130 is disposed outside the region of the substrate W along the periphery of the substrate W accommodated in the processing container 11 and exhausts the gas in the processing container 11. A side wall heater 121d is embedded in the side wall of the exhaust duct 13 facing the inner space of the processing container 11. By heating the side wall of the exhaust duct 13 to a temperature of around 150°C, for example, by the side wall heater 121d, the adhesion of reaction by-products to the side wall of the exhaust duct 13 is suppressed. The temperatures of the side wall heaters 121a to 121d are controlled by the control device 100. The side wall heaters 121a to 121d are an example of the first heater.

[0014] In addition, one end of the exhaust pipe 16 is connected to the exhaust duct 13. The other end of the exhaust pipe 16 is connected to an exhaust device 18 having a vacuum pump or the like via a pressure regulating valve 17 such as an APC (Auto Pressure Controller) valve. The pressure regulating valve 17 is controlled by the control device 100 to control the pressure in the processing vessel 11 to a preset pressure. Note that the exhaust pipe 16, the pressure regulating valve 17, and the exhaust device 18 may be heated to a temperature of around 150° C., for example, by a heater (not shown) to suppress the adhesion of reaction by-products.

[0015] A support structure 20 on which a substrate W is placed is provided in the processing vessel 11. The support structure 20 includes a stage 21 and a support portion 22. The stage 21 is made of a metal such as aluminum, for example, and the substrate W is placed on the upper surface. The support portion 22 is formed in a cylindrical shape of a metal such as aluminum, for example, and supports the stage 21 from below.

[0016] A stage heater 24 is embedded in the stage 21. The stage heater 24 heats the substrate W placed on the stage 21 according to the supplied power. During the formation of the organic film, the temperature of the substrate W is heated to a temperature suitable for vapor deposition polymerization (for example, 60° C. to 100° C.). The power supplied to the stage heater 24 is controlled by the control device 100. The temperature suitable for vapor deposition polymerization is an example of the second temperature.

[0017] In addition, a flow path 25 through which a heat medium flows is formed in the stage 21. A temperature control mechanism such as a chiller unit (not shown) is connected to the flow path 25 via pipes 26a and 26b. The heat medium adjusted to a predetermined temperature by the temperature control mechanism is supplied to the flow path 25 via the pipe 26a, and the heat medium that has flowed through the flow path 25 is returned to the temperature control mechanism via the pipe 26b. The temperature of the stage 21 is controlled by the heat medium circulating in the flow path 25. The temperature of the temperature control mechanism and the heat medium is controlled by the control device 100.

[0018] On the upper surface of the stage 21, an annular edge ring 23 is removably arranged around the substrate W placed on the stage 21.

[0019] The support portion 22 is disposed in the lower container 12 so as to penetrate an opening formed in the bottom of the lower container 12. A flange 61 made of a conductive material is connected to the lower end of the support portion 22. The upper end of a shaft 62 is connected to the lower surface side of the flange 61. The lower end of the shaft 62 is connected to a lift mechanism 63. The lift mechanism 63 raises and lowers the shaft 62. When the shaft 62 is raised and lowered by the lift mechanism 63, the support structure 20 is raised and lowered integrally with the flange 61. The lift mechanism 63 controls the distance between the substrate W placed on the stage 21 and a top plate 40 described later.

[0020] The bottom of the lower container 12 and the flange 61 are connected via a metal bellows 60. Thereby, even when the support structure 20 is raised and lowered by the lift mechanism 63, the airtightness inside the processing container 11 is maintained. The bellows 60 and the flange 61 are grounded via the processing container 11. The stage 21 is connected to the flange 61 via the support portion 22 and is grounded via the flange 61.

[0021] Above the annular exhaust duct 13, a top plate 40 is provided. The top plate 40 is supported by an insulator 14 disposed on the exhaust duct 13. The insulator 14 and the top plate 40 constitute the ceiling portion of the processing container 11. In the processing container 11, a space between the substrate W placed on the stage 21 and the top plate 40 is defined as a processing space.

[0022] Inside the top plate 40, a diffusion chamber 42 for diffusing gas is formed. A pipe 34 for supplying gas into the diffusion chamber 42 is connected to the upper surface of the top plate 40. Further, a plurality of discharge ports 41 communicating with the diffusion chamber 42 are formed on the lower surface of the top plate 40. The gas supplied into the diffusion chamber 42 from the pipe 34 diffuses in the diffusion chamber 42 and is supplied into the processing space from the discharge ports 41.

[0023] FIG. 2 is a diagram showing an example of the surface of the top plate 40 on the processing space side. In FIG. 2, the outer shape of the substrate W placed on the stage 21 is shown by a broken line. In the present embodiment, the plurality of discharge ports 41 are arranged along the periphery of the substrate W placed on the stage 21 as shown in FIG. 2, for example, and the gas supplied into the diffusion chamber 42 is supplied outside the region of the substrate W in the processing container 11. The discharge port 41 may be arranged directly above the edge ring 23 as long as it is configured to discharge gas outside the region of the substrate W. The top plate 40 is an example of a gas supply unit.

[0024] Returning to FIG. 1, the description will be continued. On the stage 21 outside the edge ring 23, a heat insulating member 50 is provided so as to cover the substrate W placed on the stage 21. The heat insulating member 50 is formed of a material having a high thermal conductivity such as aluminum, for example. The thickness of the heat insulating member 50 is preferably 3 mm or more and 8 mm or less. Thereby, a balance between shielding property and thermal conductivity can be obtained.

[0025] FIG. 3 is a cross-sectional view showing an example of the structure of the heat insulating member 50. FIG. 4 is a plan view showing an example of the structure of the heat insulating member 50. The heat insulating member 50 has a plate-like portion 51, a cylindrical portion 52, and a flange portion 53, as shown in FIG. 3, for example. The plate-like portion 51 is formed in a substantially circular plate shape as shown in FIG. 4, for example, and has a plurality of through holes 51a penetrating in the thickness direction of the plate-like portion 51. In the present embodiment, the aperture ratio of the through holes 51a in the plate-like portion 51 is 10% or more and 20% or less. Thereby, while covering the substrate W, the gas for forming an organic film on the substrate W can be efficiently supplied between the heat insulating member 50 and the substrate W. The cylindrical portion 52 is formed in a cylindrical shape along the outer periphery of the plate-like portion 51. The plate-like portion 51 is provided at the upper end of the cylindrical portion 52. The flange portion 53 has an annular shape and is provided at the lower end of the cylindrical portion 52. Further, when the heat insulating member 50 is arranged on the stage 21, the flange portion 53 extends from the cylindrical portion 52 to the outside of the stage 21 along the surface of the stage 21 on which the substrate W is placed.

[0026] When an organic film is formed on the substrate W, the heat insulation member 50 is placed on the stage 21 and in contact with the stage 21, as shown in FIG. 1 for example. On the other hand, when an organic film is formed on the substrate W, the heat insulation member 50 is not in contact with the processing container 11.

[0027] On the side wall of the lower container 12, a stepped portion 122 protruding in the direction of the support structure 20 is provided. When viewed from above, the outer shape of the heat insulation member 50 is larger than the outer shape of the stage 21. Therefore, when the support structure 20 descends, the heat insulation member 50 is placed on the stepped portion 122, and the heat insulation member 50 and the stage 21 are separated.

[0028] Here, during the formation of the organic film, the temperature of the substrate W is controlled to, for example, 60°C to 100°C. However, the side walls of the exhaust duct 13 and the lower container 12 are heated to around 150°C by the side wall heaters 121a to 121d. Therefore, due to the radiant heat from the exhaust duct 13 and the side walls of the lower container 12, the temperature near the edge of the substrate W may be higher than that near the center of the substrate W. As a result, the thickness of the formed organic film may be different between the vicinity of the center and the vicinity of the edge of the substrate W.

[0029] Therefore, in this embodiment, when the film is formed, the substrate W is covered by the heat insulation member 50, so that the radiant heat from the exhaust duct 13 and the side walls of the lower container 12 is suppressed. Also, during film formation, the heat insulation member 50 is in contact with the stage 21 and not in contact with the processing container 11, as shown in FIG. 1 for example. Therefore, the entire heat insulation member 50 has the same temperature as the stage 21. As a result, the uniformity of the temperature distribution of the substrate W is improved, and the uniformity of the thickness of the organic film formed on the substrate W can be improved.

[0030] On the upper surface of the top plate 40, a top plate heater 400 is provided. By heating the top plate 40 to a temperature of around 150°C by the top plate heater 400, the adhesion of reaction by-products in the diffusion chamber 42 and to the lower surface of the top plate 40 is suppressed. The temperature of the top plate heater 400 is controlled by the control device 100.

[0031] Valves 33a, 33b, and 33c are connected to the pipe 34. The raw material supply source 30a is connected to the valve 33a via the mass flow controller (MFC) 32a and the vaporizer 31a. The raw material supply source 30b is connected to the valve 33b via the MFC 32b and the vaporizer 31b. The plasma generator 39 is connected to the valve 33c.

[0032] The raw material supply source 30a is a supply source of a first monomer such as isocyanate. The vaporizer 31a vaporizes the liquid of the first monomer supplied from the raw material supply source 30a. The MFC 32a controls the flow rate of the gas of the first monomer vaporized by the vaporizer 31a. The valve 33a controls the supply and stop of the gas of the first monomer to the pipe 34.

[0033] The raw material supply source 30b is a supply source of a second monomer such as amine. The vaporizer 31b vaporizes the liquid of the second monomer supplied from the raw material supply source 30b. The MFC 32b controls the flow rate of the gas of the second monomer vaporized by the vaporizer 31b. The valve 33b controls the supply and stop of the gas of the second monomer to the pipe 34.

[0034] The gas of the first monomer supplied from the raw material supply source 30a and the gas of the second monomer supplied from the raw material supply source 30b are supplied into the diffusion chamber 42 via the pipe 34 and are mixed while diffusing in the diffusion chamber 42. Then, the mixed gas of the first monomer and the second monomer is supplied into the processing container 11 via the discharge port 41, and an organic film of a polymer having a polyurea bond is formed on the substrate W placed on the stage 21.

[0035] The plasma generator 39 converts the cleaning gas into plasma and supplies active species and the like contained in the plasma into the diffusion chamber 42 of the top plate 40 through the pipe 34. The active species and the like supplied into the diffusion chamber 42 are supplied into the processing container 11 through the discharge port 41. As the cleaning gas, for example, oxygen gas or halogen-containing gas can be used. As the halogen-containing gas, for example, chlorine gas, hydrogen chloride gas, bromine gas, hydrogen bromide gas, hydrogen iodide gas, nitrogen fluoride gas, etc. can be used.

[0036] After an organic film is formed on some substrates W by vapor deposition polymerization, the cleaning gas is converted into plasma by the plasma generator 39, and active species and the like contained in the plasma are supplied into the diffusion chamber 42 and the processing container 11. Then, the deposits adhering to the diffusion chamber 42, the heat insulating member 50, and the inside of the processing container 11 are removed by the active species and the like.

[0037] The control device 100 has a memory, a processor, and an input / output interface. The processor in the control device 100 reads and executes the programs and recipes stored in the memory, and controls each part of the apparatus main body 10 through the input / output interface.

[0038] [Movement of the heat insulating member 50] When an organic film is formed on the substrate W, the stage 21 is, for example, in the position shown in FIG. 1, and the heat insulating member 50 is placed on the stage 21. On the other hand, when the substrate W is loaded and unloaded, the stage 21 descends to the position shown in FIG. 5, for example. In the process of the stage 21 descending, the flange portion 53 of the heat insulating member 50 is placed on the step portion 122 of the processing container 11, and the stage 21 and the heat insulating member 50 are separated. Thereby, the substrate W on the stage 21 can be loaded and unloaded. The position of the stage 21 when an organic film is formed on the substrate W is an example of the first position, and the position of the stage 21 when the substrate W is loaded and unloaded is an example of the second position.

[0039] When cleaning is performed inside the processing container 11, for example, as shown in FIG. 6, the stage 21 descends to a position lower than the position of the stage 21 when forming an organic film on the substrate W and higher than the position of the stage 21 when loading and unloading the substrate W. The position of the stage 21 when cleaning is performed inside the processing container 11 is an example of a third position. Thereby, when cleaning inside the processing container 11, the heat insulating member 50 contacts the stepped portion 122, and the heat insulating member 50 is heated to a temperature comparable to that of the side wall of the processing container 11 via the stepped portion 122. Thereby, the reaction by-products adhering to the heat insulating member 50 can be efficiently removed.

[0040] Note that when cleaning is performed inside the processing container 11, the position of the stage 21 is set to a position higher than the position of the stage 21 when loading and unloading the substrate W. Thereby, the distance between the top plate 40 and the stage 21 can be made shorter than the position of the stage 21 when loading and unloading the substrate W, and the active species supplied from the top plate 40 can efficiently reach the surface of the stage 21. Thereby, the reaction by-products adhering to the upper surface and the edge ring 23 of the stage 21 can be efficiently removed.

[0041] The above describes the embodiments. As described above, the film forming apparatus in the embodiment includes a processing container (processing container 11), a stage (stage 21), a heat insulating member (heat insulating member 50), a gas supply unit (top plate 40), a first heater (side wall heaters 121a to 121d), and a second heater (stage heater 24). The stage is housed in the processing container, and a substrate (substrate W) is placed thereon. The heat insulating member has a plurality of through holes (through holes 51a) and is disposed above the stage so as to cover the substrate placed on the stage. The gas supply unit supplies a gas of a first monomer and a gas of a second monomer into the processing container, and forms a polymer organic film on the substrate by a polymerization reaction of the first monomer and the second monomer. The first heater heats the side wall of the processing container to a first temperature. The second heater heats the stage to a second temperature lower than the first temperature. The heat insulating member contacts the stage and does not contact the processing container when the polymer organic film is formed on the substrate. Thereby, the uniformity of the thickness of the organic film formed on the substrate W can be improved.

[0042] Further, in the above-described embodiment, the heat insulating member has a plate-like portion (plate-like portion 51) in which a plurality of through holes are formed and is disposed at a position facing the substrate, and a cylindrical portion (cylindrical portion 52) disposed between the plate-like portion and the stage. Thereby, the heat insulating member 50 can be easily formed.

[0043] Further, in the above-described embodiment, the aperture ratio of the through holes in the plate-like portion is 10% or more and 20% or less. Thereby, while covering the substrate W, the gas for forming the organic film on the substrate W can be efficiently supplied between the heat insulating member 50 and the substrate W.

[0044] In addition, the film forming apparatus in the above-described embodiment further includes a lift mechanism (lift mechanism 63) for raising and lowering the stage. Further, the heat insulating member has a flange portion (flange portion 53) that extends from the cylindrical portion to the outside of the stage along the surface of the stage on which the substrate is placed. The processing container has a stepped portion (stepped portion 122) provided on the inner wall. The lift mechanism lowers the stage during loading and unloading of the substrate, and places the flange portion of the heat insulating member on the stepped portion, thereby separating the heat insulating member from the stage. Thereby, the substrate W can be loaded and unloaded.

[0045] In addition, in the above-described embodiment, the flange portion is provided at the lower end of the cylindrical portion. Thereby, the heat insulating member 50 can be placed on the stepped portion 122 with a small moving distance of the stage 21 in the vertical direction.

[0046] In addition, in the above-described embodiment, the lift mechanism lowers the stage during cleaning inside the processing container, and places the flange portion of the heat insulating member on the stepped portion, thereby heating the heat insulating member to a first temperature through the stepped portion. Thereby, the reaction by-products adhering to the heat insulating member 50 can be efficiently removed.

[0047] In addition, in the above-described embodiment, the lift mechanism controls the position of the stage such that the height of the stage is lower than the first position when processing the substrate and higher than the second position when loading and unloading the substrate during cleaning inside the processing container. Thereby, the reaction by-products adhering to the upper surface of the stage 21 can be efficiently removed.

[0048] In addition, in the above-described embodiment, the heat insulating member is formed of aluminum. Thereby, the temperature of the entire heat insulating member 50 can be kept more uniform, and the uniformity of the temperature distribution of the substrate W can be improved.

[0049] In addition, in the above-described embodiment, the thickness of the heat insulating member is 3 mm or more and 8 mm or less. Thereby, a balance between the shielding property and the thermal conductivity can be obtained.

[0050] [Others] Note that the technology disclosed in this application is not limited to the above-described embodiments, and various modifications are possible within the scope of the gist thereof.

[0051] For example, in the above-described embodiment, the heat-insulating member 50 has a structure including a plate-like portion 51 and a cylindrical portion 52, but the disclosed technology is not limited thereto. As another form, the heat-insulating member 50 may have a dome shape having a flange portion 53 and a plurality of through-holes 51a, as shown in FIG. 7 for example.

[0052] Also, in the heat-insulating member 50 in the above-described embodiment, a plurality of through-holes 51a are formed only in the plate-like portion 51, but the disclosed technology is not limited thereto. As another form, for example, as shown in FIGS. 8 and 9, a plurality of through-holes 51b penetrating in the thickness direction of the cylindrical portion 52 may also be formed in the cylindrical portion 52. At this time, the plurality of through-holes 51b are preferably formed at a position closer to the lower end than the upper end of the cylindrical portion 52. Thereby, as indicated by the dotted arrow in FIG. 8 for example, a gas flow occurs that flows in from the through-hole 51a in the plate-like portion 51, passes through the space between the plate-like portion 51 and the substrate W, and reaches the through-hole 51b. Thereby, the retention of gas in the heat-insulating member 50 can be suppressed.

[0053] Also, in the heat-insulating member 50 in the above-described embodiment, the flange portion 53 is provided at the lower end of the cylindrical portion 52, but the disclosed technology is not limited thereto. As another form, for example, as shown in FIG. 10, the flange portion 53 may be provided between the upper end and the lower end of the cylindrical portion 52. Note that the flange portion 53 may be provided at the upper end of the cylindrical portion 52.

[0054] In addition, in the heat insulation member 50 in the above-described embodiment, for example, as shown in FIG. 4, an annular flange portion 53 is provided at the lower end of the cylindrical portion 52, but the disclosed technology is not limited thereto. When the stage 21 descends, for the purpose of placing the heat insulation member 50 on the step portion 122 of the lower container 12, as another form, for example, as shown in FIG. 11, a plurality of protruding portions 53a may be provided at the lower end of the cylindrical portion 52 instead of the annular flange portion 53. When the step portion 122 in the processing container 11 comes into contact with the protruding portion 53a, the heat of the step portion 122 of the lower container 12 is transmitted to the heat insulation member 50 through the protruding portion a. Therefore, depending on the thermal conductivity of the heat insulation member 50 and the protruding portion 53a, there may be a bias in the temperature distribution of the heat insulation member 50. In that case, the number of the protruding portions 53a (three in the example of FIG. 11) may be increased. Thereby, the bias in the temperature distribution of the heat insulation member 50 can be reduced.

[0055] In the above-described embodiment, an isocyanate is used as the first monomer and an amine is used as the second monomer to form a polymer film having a urea bond (-NH-CO-NH-) on the surface of the substrate W, but the disclosed technology is not limited thereto. For example, an epoxide may be used as the first monomer and an amine may be used as the second monomer to form a polymer film having a 2-aminoethanol bond (-NH-CH2-CH(OH)-) on the surface of the substrate W. Alternatively, an isocyanate may be used as the first monomer and an alcohol may be used as the second monomer to form a polymer film having a urethane bond (-NH-CO-O-) on the surface of the substrate W. Alternatively, an acyl halide may be used as the first monomer and an amine may be used as the second monomer to form a polymer film having an amide bond (-NH-CO-) on the surface of the substrate W. Alternatively, a carboxylic anhydride may be used as the first monomer and an amine may be used as the second monomer to form a polymer film having an imide bond (-CO-N(-)-CO-) on the surface of the substrate W.

[0056] It should be noted that the embodiments disclosed this time should be considered illustrative in all respects and not restrictive. Indeed, the above-described embodiments can be embodied in various forms. Also, the above embodiments may be omitted, substituted, or changed in various forms without departing from the scope and spirit of the appended claims.

[0057] Furthermore, regarding the above embodiments, the following additional remarks are disclosed.

[0058] (Supplementary Note 1) A processing container, A stage accommodated in the processing container on which a substrate is placed, A heat insulating member having a plurality of through holes and disposed on the stage so as to cover the substrate placed on the stage, A gas supply unit that supplies a gas of a first monomer and a gas of a second monomer into the processing container and forms a polymer organic film on the substrate by a polymerization reaction of the first monomer and the second monomer, A first heater that heats the side wall of the processing container to a first temperature, A second heater that heats the stage to a second temperature lower than the first temperature, Comprising, The heat insulating member is a film forming apparatus that contacts the stage and does not contact the processing container when a polymer organic film is formed on the substrate. (Supplementary Note 2) The heat insulating member, A plate-like portion in which a plurality of the through holes are formed and disposed at a position facing the substrate, A cylindrical portion disposed between the plate-like portion and the stage, The film forming apparatus according to Supplementary Note 1 having the above. (Supplementary Note 3) The opening ratio of the through holes in the plate-like portion is 10% or more and 20% or less in the film forming apparatus according to Supplementary Note 2. (Supplementary Note 4) The cylindrical portion has a plurality of through holes in the film forming apparatus according to Supplementary Note 2 or 3. (Supplementary Note 5) The film forming apparatus according to supplementary note 4, wherein the plurality of through holes formed in the cylindrical portion are formed at a position closer to the lower end than the upper end of the cylindrical portion. (Supplementary note 6) The film forming apparatus further includes a lift mechanism for raising and lowering the stage, The heat insulating member has a flange portion extending from the cylindrical portion to the outside of the stage along the surface of the stage on which the substrate is placed, The processing container has a stepped portion provided on the inner wall, The lift mechanism lowers the stage during loading and unloading of the substrate, and places the flange portion of the heat insulating member on the stepped portion, thereby separating the heat insulating member from the stage. The film forming apparatus according to any one of supplementary notes 2 to 5. (Supplementary note 7) The film forming apparatus according to supplementary note 6, wherein the flange portion is provided at the lower end of the cylindrical portion. (Supplementary note 8) The lift mechanism lowers the stage during cleaning inside the processing container, and places the flange portion of the heat insulating member on the stepped portion, thereby heating the heat insulating member to the first temperature through the stepped portion. The film forming apparatus according to supplementary note 6 or 7. (Supplementary note 9) The lift mechanism controls the position of the stage such that the height of the stage during cleaning inside the processing container is lower than a first position when processing the substrate and higher than a second position when loading and unloading the substrate. The film forming apparatus according to supplementary note 8. (Supplementary note 10) The film forming apparatus according to any one of supplementary notes 1 to 9, wherein the heat insulating member is formed of aluminum. (Supplementary note 11) The film forming apparatus according to any one of supplementary notes 1 to 10, wherein the thickness of the heat insulating member is 3 mm or more and 5 mm or less.

Explanation of reference numerals

[0059] W Substrate 1 Film forming apparatus 10 Apparatus main body 11 Processing container 12 Lower container 121 Side wall heater 122 Step portion 13 Exhaust duct 130 Exhaust port 20 Support structure 21 Stage 22 Support part 23 Edge ring 24 Stage heater 30 Raw material source 31 Vaporizer 32 MFC 33 Valve 39 Plasma generator 40 Top plate 41 Discharge port 42 Diffusion chamber 400 Top plate heater 50 Heat shield member 51 Plate-like part 51a Through hole 51b Through hole 52 Cylindrical part 53 Flange part 53a Protrusion 63 Lift mechanism 100 Control device

Claims

1. A processing container, A stage accommodated in the processing container and on which a substrate is placed, A heat insulating member having a plurality of through holes and disposed on the stage so as to cover the substrate placed on the stage, A gas supply unit that supplies a gas of a first monomer and a gas of a second monomer into the processing container, and forms a polymer organic film on the substrate by a polymerization reaction of the first monomer and the second monomer, A first heater that heats a side wall of the processing container to a first temperature, A second heater that heats the stage to a second temperature lower than the first temperature, comprising: The heat insulating member contacts the stage and does not contact the processing container when a polymer organic film is formed on the substrate. A film forming apparatus.

2. The heat insulating member has a plate-like portion in which a plurality of the through holes are formed and is disposed at a position facing the substrate, and a cylindrical portion disposed between the plate-like portion and the stage. The film forming apparatus according to claim 1, having.

3. The film forming apparatus according to claim 2, wherein an opening ratio of the through holes in the plate-like portion is 10% or more and 20% or less.

4. The film forming apparatus according to claim 2 or 3, wherein the cylindrical portion has a plurality of through holes.

5. The film forming apparatus according to claim 4, wherein the plurality of through holes of the cylindrical portion are formed at a position closer to the lower end than the upper end of the cylindrical portion.

6. Further comprising a lift mechanism for raising and lowering the stage, The heat insulating member has a flange portion extending from the cylindrical portion to the outside of the stage along the surface of the stage on which the substrate is placed, The processing container has a stepped portion provided on an inner wall. The film forming apparatus according to claim 2, wherein the lift mechanism lowers the stage when loading and unloading the substrate, and places the flange portion of the heat insulating member on the step portion, thereby separating the heat insulating member from the stage.

7. The film forming apparatus according to claim 6, wherein the flange portion is provided at a lower end of the cylindrical portion.

8. The film forming apparatus according to claim 6 or 7, wherein the lift mechanism lowers the stage during cleaning in the processing chamber, and places the flange portion of the heat insulating member on the step portion, thereby heating the heat insulating member to the first temperature through the step portion.

9. The film forming apparatus according to claim 8, wherein the lift mechanism controls the position of the stage such that the height of the stage is lower than a first position when processing the substrate and higher than a second position when loading and unloading the substrate during cleaning in the processing chamber, to be a third position.

10. The film forming apparatus according to claim 1, wherein the heat insulating member is formed of aluminum.

11. The film forming apparatus according to claim 1, wherein the thickness of the heat insulating member is 3 mm or more and 5 mm or less.

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