Manufacturing method of semiconductor device and laminate for temporary fixture

Abstract

To provide a manufacturing method of a semiconductor device which suppresses damage of a support member.SOLUTION: A manufacturing method of a semiconductor device includes the steps of: preparing a laminate 10 for temporarily fixture successively including a support member 2, a first thermally curable resin layer 4 containing a first thermally curable resin component, a light absorption layer 6 absorbing ultraviolet light and generating heat and a second thermally curable resin layer 8 containing a second thermally curable resin component; temporarily fixing a semiconductor member 40 to the support member via the first thermally curable resin layer, the light absorption layer and the second thermally curable resin layer; processing the semiconductor member which is temporarily fixed to the support member; and irradiating the light absorption layer of the laminate for temporary fixture with light including ultraviolet light from the side of the support member, thereby separating the semiconductor member from the support member.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present disclosure relates to a method for manufacturing a semiconductor device and a temporary fixing laminate.

Background Art

[0002] In the manufacture of semiconductor elements, after integrating a circuit into a semiconductor substrate such as a semiconductor wafer or a semiconductor chip, the semiconductor member having the semiconductor substrate may be processed. The semiconductor member is subjected to processing such as back grinding or singulation by dicing. The semiconductor member is usually processed while being temporarily fixed to a support member, and then the semiconductor member is separated from the support member. For example, Patent Document 1 discloses a method of temporarily fixing a semiconductor member via a temporary fixing material layer containing a predetermined component on a support member, and irradiating the temporary fixing material layer with ultraviolet light (ultraviolet laser light) from the support member side after processing the semiconductor member to separate the processed semiconductor member from the support member.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In the conventional method of separating a semiconductor member from a support member, when ultraviolet light (ultraviolet laser light) is irradiated from the support member side to the temporary fixing material layer, local heat generation occurring in the temporary fixing material layer affects the support member. For example, the support member may be damaged due to the occurrence of irradiation marks on the surface of the support member. If the support member is damaged, it is disadvantageous in terms of reuse.

[0005] Therefore, the main object of the present disclosure is to provide a method for manufacturing a semiconductor device capable of suppressing damage to a support member in a method for manufacturing a semiconductor device including a step of processing a semiconductor member temporarily fixed to the support member.

Means for Solving the Problems

[0006] As a result of investigations by the present inventors to solve the above problems, it has been found that damage to the support member can be suppressed by providing a layer containing a cured product of a thermosetting resin component between a layer that absorbs light contained in the temporary fixing material layer and generates heat (light absorption layer) and the support member, and the invention of the present disclosure has been completed.

[0007] The present disclosure provides the method for manufacturing a semiconductor device described in [1] to [3], and the temporary fixing laminate described in [4] to [6]. [1] A step of preparing a temporary fixing laminate having, in this order, a support member, a first thermosetting resin layer containing a first thermosetting resin component, a light absorption layer that absorbs ultraviolet light and generates heat, and a second thermosetting resin layer containing a second thermosetting resin component; a step of temporarily fixing a semiconductor member to the support member via the first thermosetting resin layer, the light absorption layer, and the second thermosetting resin layer; a step of processing the semiconductor member temporarily fixed to the support member; and a step of irradiating the light absorption layer of the temporary fixing laminate with light containing ultraviolet light from the support member side to separate the semiconductor member from the support member. A method for manufacturing a semiconductor device. [2] The method for manufacturing a semiconductor device according to [1], wherein the light absorption layer contains a polyamideimide resin. [3] The method for manufacturing a semiconductor device according to [1] or [2], wherein the first thermosetting resin component and the second thermosetting resin component contain a thermoplastic resin and a thermosetting resin. [4] A temporary fixing laminate having, in this order, a support member, a first thermosetting resin layer containing a first thermosetting resin component, a light absorption layer that absorbs ultraviolet light and generates heat, and a second thermosetting resin layer containing a second thermosetting resin component. [5] The temporary fixing laminate according to [4], wherein the light absorption layer contains a polyamideimide resin. [6] The temporary fixing laminate according to [4] or [5], wherein the first thermosetting resin component and the second thermosetting resin component contain a thermoplastic resin and a thermosetting resin.

Advantages of the Invention

[0008] According to the present disclosure, there is provided a method for manufacturing a semiconductor device including a step of processing a semiconductor member temporarily fixed to a support member, capable of suppressing damage to the support member. Further, some forms of the method for manufacturing a semiconductor device tend to be excellent in terms of removing peeling residues after separating the semiconductor member and the support member. Further, according to the present disclosure, there is provided a temporary fixing laminate used in such a method for manufacturing a semiconductor device.

Brief Description of the Drawings

[0009]

Figure 1

Figure 2

Figure 3

Figure 4

Embodiments for Carrying Out the Invention

[0010] Hereinafter, embodiments of the present disclosure will be described with appropriate reference to the drawings. However, the present disclosure is not limited to the following embodiments. In the following embodiments, the components thereof (including steps, etc.) are not essential unless otherwise specifically stated. The sizes of the components in each figure are conceptual, and the relative size relationships between the components are not limited to those shown in each figure.

[0011] The same applies to the numerical values and their ranges in the present disclosure, which do not limit the present disclosure. The numerical range indicated by "~" in this specification indicates a range that includes the numerical values described before and after "~" as the minimum value and the maximum value, respectively. In the numerical ranges described step by step in this specification, the upper limit value or the lower limit value described in one numerical range may be replaced with the upper limit value or the lower limit value of the numerical range described in other step-by-step descriptions. Further, in the numerical ranges described in this specification, the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the examples (production examples).

[0012] In this specification, the term "layer" includes, in addition to the structure formed over the entire surface when observed as a plan view, the structure formed partially. Also, in this specification, the term "step" is included in this term as long as the intended action of the step is achieved even when it cannot be clearly distinguished from other steps, not just independent steps.

[0013] In this specification, (meth)acrylate means acrylate or its corresponding methacrylate. The same applies to other similar expressions such as (meth)acryloyl group, (meth)acrylic copolymer, etc.

[0014] In this specification, the materials exemplified below may be used alone or in combination of two or more within the range corresponding to the conditions, unless otherwise specified. The content of each component means the total amount of the plurality of substances corresponding to each component, unless otherwise specified when there are a plurality of substances corresponding to each component.

[0015] [Temporary Fixing Laminate and Method for Producing the Same] The temporary fixing laminate of the present embodiment is used for temporarily fixing a semiconductor member and a support member. FIG. 1 is a schematic cross-sectional view showing an embodiment of the temporary fixing laminate. The temporary fixing laminate 10 shown in FIG. 1 includes a support member 2, a first thermosetting resin layer 4 containing a first thermosetting resin component, a light absorption layer (light absorption layer 6) that absorbs ultraviolet light and generates heat, and a second thermosetting resin layer 8 containing a second thermosetting resin component in this order. The second thermosetting resin layer 8 has a surface S on the side where the semiconductor member of the second thermosetting resin layer 8 is disposed (the side opposite to the light absorption layer 6). Since the temporary fixing laminate 10 has the first thermosetting resin layer 4, it is possible to reduce the influence on the support member 2 due to local heat generation in the light absorption layer 6, and it is possible to suppress damage to the support member 2.

[0016] The support member 2 is a plate-like body having a high transmittance and capable of withstanding the load received during the processing of the semiconductor member. Examples of the support member 2 include an inorganic glass substrate and a transparent resin substrate.

[0017] The thickness of the support member 2 may be, for example, 0.1 to 2.0 mm. When the thickness of the support member 2 is 0.1 mm or more, handling tends to be easy. When the thickness of the support member 2 is 2.0 mm or less, the material cost tends to be suppressed.

[0018] The first thermosetting resin layer 4 contains a first thermosetting resin component. The first thermosetting resin component may include, for example, a thermoplastic resin and a thermosetting resin. At this time, the thermoplastic resin may include a hydrocarbon resin. When the first thermosetting resin component includes a thermoplastic resin and a thermosetting resin, the heat resistance tends to be more improved than when the thermoplastic resin is used alone, and the peeling residue can be sufficiently reduced compared to when the thermosetting resin is used alone.

[0019] A thermoplastic resin is a resin having thermoplasticity, or a resin having thermoplasticity at least in an uncured state and forming a crosslinked structure after heating. Examples of the thermoplastic resin include hydrocarbon resins, polycarbonates, polyphenylene sulfides, polyether sulfones, polyetherimides, polyimides, petroleum resins, novolak resins, and the like. The thermoplastic resin may contain a hydrocarbon resin or may be a hydrocarbon resin.

[0020] A hydrocarbon resin is a resin whose main skeleton is composed of hydrocarbons. Examples of such hydrocarbon resins include ethylene-propylene copolymers, ethylene-1-butene copolymers, ethylene-propylene-1-butene copolymer elastomers, ethylene-1-hexene copolymers, ethylene-1-octene copolymers, ethylene-styrene copolymers, ethylene-norbornene copolymers, propylene-1-butene copolymers, ethylene-propylene-non-conjugated diene copolymers, ethylene-1-butene-non-conjugated diene copolymers, ethylene-propylene-1-butene-non-conjugated diene copolymers, polyisoprene, polybutadiene, styrene-butadiene-styrene block copolymers (SBS), styrene-isoprene-styrene block copolymers (SIS), styrene-ethylene-butylene-styrene block copolymers (SEBS), styrene-ethylene-propylene-styrene block copolymers (SEPS), and the like. These hydrocarbon resins may be subjected to a hydrogenation treatment. Further, these hydrocarbon resins may be carboxy-modified with maleic anhydride or the like. Among these, the hydrocarbon resin may contain a hydrocarbon resin having a monomer unit derived from styrene (i.e., a styrene-based resin) or may be a styrene-based resin. More specifically, the hydrocarbon resin may contain a styrene-ethylene-butylene-styrene block copolymer (SEBS) or may be a styrene-ethylene-butylene-styrene block copolymer (SEBS).

[0021] The content of the hydrocarbon resin (or styrene resin) may be 50% by mass or more, 70% by mass or more, or 90% by mass or more based on the total amount of the thermoplastic resin. The content of the hydrocarbon resin (or styrene resin) may be 100% by mass or less based on the total amount of the thermoplastic resin. When the content of the hydrocarbon resin (or styrene resin) is within such a range, the storage elastic modulus of the first thermosetting resin film tends to be easily adjusted to a desired range. The thermoplastic resin may be composed of a hydrocarbon resin (or styrene resin).

[0022] The content of the styrene resin (or SEBS) may be 50% by mass or more, 70% by mass or more, or 90% by mass or more based on the total amount of the hydrocarbon resin. The content of the styrene resin (or SEBS) may be 100% by mass or less based on the total amount of the hydrocarbon resin. When the content of the styrene resin (or SEBS) is within such a range, the storage elastic modulus of the first thermosetting resin film tends to be easily adjusted to a desired range. The hydrocarbon resin may be composed of a styrene resin (or SEBS).

[0023] When the hydrocarbon resin contains a styrene resin, the content of the monomer unit derived from styrene may be 10 to 22.5% by mass based on the total amount of the hydrocarbon resin (or thermoplastic resin). When the content of the monomer unit derived from styrene is within such a range, the storage elastic modulus of the first thermosetting resin film tends to be easily adjusted to a desired range. In addition, when two or more kinds of styrene resins are used in combination, the content of the monomer unit derived from styrene means the total of the contents of the monomer units derived from styrene in the two or more kinds of styrene resins. The content of the monomer unit derived from styrene may be 11% by mass or more, 12% by mass or more, or 13% by mass or more, and may be 22% by mass or less or 21.5% by mass or less based on the total amount of the hydrocarbon resin (or thermoplastic resin).

[0024] When the first thermosetting resin component contains a styrene resin as a thermoplastic resin (hydrocarbon resin), the content of the monomer unit derived from styrene may be 7 to 16% by mass based on the total amount of the first thermosetting resin component. When the content of the monomer unit derived from styrene is in such a range, the storage modulus of the first thermosetting resin film tends to be easily adjusted to a desired range. When two or more styrene resins are used in combination, the content of the monomer unit derived from styrene means the total content of the monomer unit derived from styrene in the two or more styrene resins. The content of the monomer unit derived from styrene may be 7.5% by mass or more, 8% by mass or more, or 9% by mass or more, and may be 15.5% by mass or less or 15% by mass or less based on the total amount of the first thermosetting resin component.

[0025] The Tg of the thermoplastic resin may be -100 to 500°C, -50 to 300°C, or -50 to 50°C. When the Tg of the thermoplastic resin is 500°C or lower, it is easy to ensure flexibility and improve low-temperature adhesiveness when forming a film-like temporary fixing material. When the Tg of the thermoplastic resin is -100°C or higher, it tends to be possible to suppress a decrease in handleability and peelability due to excessive flexibility when forming a film-like temporary fixing material.

[0026] The Tg of the thermoplastic resin is the midpoint glass transition temperature obtained by differential scanning calorimetry (DSC). Specifically, the Tg of the thermoplastic resin is the midpoint glass transition temperature calculated by measuring the heat change under the conditions of a heating rate of 10°C / min and a measurement temperature of -80 to 80°C according to the method conforming to JIS K7121:2012.

[0027] The weight average molecular weight (Mw) of the thermoplastic resin may be 10,000 to 5,000,000 or 100,000 to 2,000,000. When the weight average molecular weight is 10,000 or more, it tends to be easier to ensure the heat resistance of the formed thermosetting resin layer. When the weight average molecular weight is 5,000,000 or less, when forming the first thermosetting resin film, it tends to be easier to suppress the decrease in flow and the decrease in adhesiveness. The weight average molecular weight is a polystyrene conversion value using a calibration curve with standard polystyrene by gel permeation chromatography (GPC).

[0028] The content of the thermoplastic resin may be 40 to 90% by mass based on the total amount of the first thermosetting resin component. The content of the thermoplastic resin may be 50% by mass or more, or 60% by mass or more, and may also be 85% by mass or less, or 80% by mass or less based on the total amount of the first thermosetting resin component. When the content of the thermoplastic resin is in such a range, it tends to be excellent in the thin film formability and flatness of the thermosetting resin layer.

[0029] The thermosetting resin is a resin that exhibits curability by heat, and is a concept that does not include the above thermoplastic resin (hydrocarbon resin). Examples of the thermosetting resin include epoxy resin, acrylic resin, silicone resin, phenolic resin, thermosetting polyimide resin, polyurethane resin, melamine resin, urea resin, etc. Among these, the thermosetting resin may be an epoxy resin because of its excellent heat resistance, workability, and reliability.

[0030] The epoxy resin is not particularly limited as long as it hardens and has a heat-resistant effect. Examples of the epoxy resin include bifunctional epoxy resins such as bisphenol A type epoxy, novolak type epoxy resins such as phenol novolak type epoxy resin and cresol novolak type epoxy resin, and alicyclic epoxy resins such as dicyclopentadiene type epoxy resin. Further, the epoxy resin may be, for example, a polyfunctional epoxy resin, a glycidylamine type epoxy resin, or a heterocyclic ring-containing epoxy resin. Among these, the epoxy resin may contain an alicyclic epoxy resin from the viewpoints of heat resistance and weather resistance.

[0031] When an epoxy resin is used as the thermosetting resin, the thermosetting resin may be a combination of an epoxy resin and an epoxy resin curing agent. As the epoxy resin curing agent, known curing agents that are commonly used can be used. Examples of the epoxy resin curing agent include amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, bisphenols (bisphenol A, bisphenol F, bisphenol S, etc.), phenolic resins (phenol novolak resins, bisphenol A type novolak resins, cresol novolak resins, phenol aralkyl resins, etc.).

[0032] The content of the thermosetting resin may be 10 to 60% by mass based on the total amount of the first thermosetting resin component. The content of the thermosetting resin may be 15% by mass or more, or 20% by mass or more, based on the total amount of the first thermosetting resin component, and may be 50% by mass or less, or 40% by mass or less. When the content of the thermosetting resin is within such a range, the thin film forming property and flatness of the thermosetting resin layer tend to be more excellent.

[0033] The first thermosetting resin component may further contain a curing accelerator that promotes the curing reaction of the thermosetting resin such as an epoxy resin. Examples of the curing accelerator include imidazole derivatives, dicyandiamide derivatives, dicarboxylic acid dihydrazides, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, 1,8-diazabicyclo[5,4,0]undecene-7-tetraphenylborate, etc.

[0034] The content of the curing accelerator may be 0.01 to 5 parts by mass with respect to 100 parts by mass of the total amount of the thermosetting resin. When the content of the curing accelerator is within such a range, the curability of the first thermosetting resin component and the heat resistance after curing tend to be more excellent.

[0035] The first thermosetting resin component may further contain a polymerizable monomer and a polymerization initiator. The polymerizable monomer is not particularly limited as long as it polymerizes by heating or irradiation with ultraviolet light or the like. From the viewpoints of material selectivity and ease of availability, the polymerizable monomer may be, for example, a compound having a polymerizable functional group such as an ethylenically unsaturated group. Examples of the polymerizable monomer include (meth)acrylate, vinylidene halide, vinyl ether, vinyl ester, vinyl pyridine, vinyl amide, arylated vinyl, and the like. Among these, the polymerizable monomer may be (meth)acrylate. The (meth)acrylate may be monofunctional (1-functional), difunctional, or trifunctional or higher, but from the viewpoint of obtaining sufficient curability, it may be a difunctional or higher (meth)acrylate.

[0036] The content of the polymerizable monomer may be 0.1 to 20% by mass based on the total amount of the first thermosetting resin component.

[0037] The polymerization initiator is not particularly limited as long as it initiates polymerization by heating or irradiation with ultraviolet light or the like. For example, when a compound having an ethylenically unsaturated group is used as the polymerizable monomer, the polymerization initiator may be a thermal radical polymerization initiator or a photo radical polymerization initiator.

[0038] The content of the polymerization initiator may be 0.01 to 5 parts by mass with respect to 100 parts by mass of the total amount of the polymerizable monomer.

[0039] The first thermosetting resin component can be the main component of the first thermosetting resin layer (first thermosetting resin film). The content of the first thermosetting resin component may be 70% by mass or more, 80% by mass or more, 90% by mass or more, 95% by mass or more, or 98% by mass or more based on the total amount of the first thermosetting resin layer (first thermosetting resin film).

[0040] The first thermosetting resin layer (first thermosetting resin film) may contain other components in addition to the first thermosetting resin component. Examples of other components include insulating fillers, sensitizers, antioxidants, and the like.

[0041] The insulating filler can be added for the purpose of imparting low thermal expansibility, low moisture absorption, etc. to the thermosetting resin layer. Examples of insulating fillers include non-metallic inorganic fillers such as silica, alumina, boron nitride, titania, glass, and ceramics. The insulating filler may be particles whose surface is treated with a surface treatment agent from the viewpoint of dispersibility in a solvent. The surface treatment agent may be, for example, a silane coupling agent.

[0042] The content of the insulating filler may be 0.1 to 20 parts by mass with respect to 100 parts by mass of the total amount of the first thermosetting resin component. When the content of the insulating filler is within such a range, there is a tendency to further improve the heat resistance without disturbing light transmission. Also, when the content of the insulating filler is within such a range, it may contribute to easy peelability.

[0043] Examples of sensitizers include anthracene, phenanthrene, chrysene, benzopyrene, fluoranthene, rubrene, pyrene, xanthone, indanthrene, thioxanthen-9-one, 2-isopropyl-9H-thioxanthen-9-one, 4-isopropyl-9H-thioxanthen-9-one, 1-chloro-4-propoxythioxanthone, and the like.

[0044] The content of the sensitizer may be 0.01 to 10 parts by mass with respect to 100 parts by mass of the total amount of the first thermosetting resin component. When the content of the sensitizer is within such a range, there is a tendency for less influence on the properties and thin film properties of the first thermosetting resin component.

[0045] Examples of the antioxidant include quinone derivatives such as benzoquinone and hydroquinone, phenol derivatives (hindered phenol derivatives) such as 4-methoxyphenol and 4-t-butylcatechol, aminoxyl derivatives such as 2,2,6,6-tetramethylpiperidine-1-oxyl and 4-hydroxy-2,2,6,6-tetramethylpiperidine-1-oxyl, and hindered amine derivatives such as tetramethylpiperidyl methacrylate.

[0046] The content of the antioxidant may be 0.1 to 10 parts by mass with respect to 100 parts by mass of the total amount of the first thermosetting resin component. When the content of the antioxidant is within such a range, decomposition of the thermosetting resin component can be suppressed and contamination can be prevented.

[0047] From the viewpoint of stress relaxation, the thickness of the first thermosetting resin layer 4 may be, for example, 0.1 μm or more, 1 μm or more, or 5 μm or more, and may be 200 μm or less, 100 μm or less, or 70 μm or less.

[0048] The light absorption layer (light absorption layer 6) that absorbs ultraviolet light and generates heat may be, for example, a resin layer containing a resin that absorbs ultraviolet light and generates heat. Examples of the resin that absorbs ultraviolet light and generates heat include polyamideimide resin, polyimide resin, polyetheretherketone resin, polyethylene naphthalate resin, bismaleimide resin, polyketone resin, etc. Among these, the resin that absorbs ultraviolet light and generates heat may be a polyamideimide (PAI) resin or a polyimide (PI) resin, and may be a polyamideimide resin because it can efficiently separate the semiconductor member and the support member when irradiated with light containing ultraviolet light. That is, the resin layer (light absorption layer) may contain a polyamideimide resin or a polyimide resin, and may contain a polyamideimide resin. The content of the resin that absorbs ultraviolet light and generates heat may be 50% by mass or more, 60% by mass or more, or 70% by mass or more, and may be 100% by mass or less based on the total amount of the resin layer (light absorption layer).

[0049] The resin layer (light absorption layer) may contain other resins and other additives other than the resin that absorbs ultraviolet light and generates heat, as long as the effects of the present disclosure are not inhibited. Examples of the other resins include thermosetting resins and the like. As the thermosetting resin, the thermosetting resins exemplified by the first thermosetting resin component can be exemplified. Examples of the other additives include a curing accelerator, a pigment, a sensitizer, and the like. The total content of the other resin and the other additives may be 50% by mass or less, 40% by mass or less, or 30% by mass or less, and may be 0% by mass or more, based on the total amount of the resin layer (light absorption layer).

[0050] As the resin film for the light absorption layer, a commercially available resin film may be used as it is, or a resin film formed using a resin solution may be used.

[0051] Examples of commercially available polyamideimide resins include HPC-5020 and HPC-9000 (Rezonac Co., Ltd.).

[0052] From the viewpoint of good peelability, the thickness of the light absorption layer 6 may be, for example, 0.1 μm or more, 1 μm or more, or 5 μm or more, and may be 100 μm or less, 50 μm or less, or 30 μm or less.

[0053] The second thermosetting resin layer 8 contains a second thermosetting resin component. The components contained in the second thermosetting resin component, its preferred embodiments, etc. are the same as those of the components contained in the first thermosetting resin component, its preferred embodiments, etc. Therefore, duplicate explanations are omitted here. The second thermosetting resin component may be composed of the same components as the first thermosetting resin component, or may be composed of components different from the first thermosetting resin component.

[0054] From the viewpoint of stress relaxation, the thickness of the second thermosetting resin layer 8 may be, for example, 0.1 μm or more, 1 μm or more, or 5 μm or more, and may be 200 μm or less, 100 μm or less, or 70 μm or less.

[0055] The manufacturing method of the temporary fixing laminate 10 shown in FIG. 1 is not particularly limited. For example, it can be obtained by a method including a step of providing a first thermosetting resin layer 4 on a support member 2, a step of providing a light absorption layer 6 on the first thermosetting resin layer 4, and a step of providing a second thermosetting resin layer 8 on the light absorption layer 6. Further, the temporary fixing laminate 10 can also be obtained by a method including a step of producing a three-layer film having, for example, a first thermosetting resin layer 4 (first thermosetting resin film), a light absorption layer 6 (resin film for light absorption layer), and a second thermosetting resin layer 8 (second thermosetting resin film), and a step of attaching the three-layer film on the support member 2 with the first thermosetting resin layer 4 of the three-layer film facing the support member 2.

[0056] The step of providing the first thermosetting resin layer 4 on the support member 2 may include, for example, a step of preparing a first varnish containing a first thermosetting resin component, a step of coating the first varnish on a support film and volatilizing a solvent from the coated first varnish to produce a first thermosetting resin film, and a step of attaching the first thermosetting resin film to form the first thermosetting resin layer 4.

[0057] The first varnish can be prepared, for example, by stirring and mixing, kneading, etc. a first thermosetting resin component, etc. in a solvent.

[0058] The solvent used in the preparation of the first varnish is not particularly limited as long as it has the property of uniformly dissolving or dispersing each component. Examples of such solvents include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p - cymene; aliphatic hydrocarbons such as hexane and heptane; cyclic alkanes such as methylcyclohexane; cyclic ethers such as tetrahydrofuran and 1,4 - dioxane; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and 4 - hydroxy - 4 - methyl - 2 - pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, and γ - butyrolactone; carbonates such as ethylene carbonate and propylene carbonate; amides such as N,N - dimethylformamide, N,N - dimethylacetamide, and N - methyl - 2 - pyrrolidone. Among these, the solvent may be toluene, xylene, heptane, or cyclohexanone from the viewpoints of solubility and boiling point. The solid content concentration in the first varnish may be 10 to 80% by mass based on the total mass of the first varnish.

[0059] The stirring and mixing or kneading during the preparation of the first varnish can be carried out, for example, using a stirrer, a kneader, a three - roll mill, a ball mill, a bead mill, a homodisper, etc.

[0060] Examples of the support film include polyester films such as polyethylene terephthalate (PET), polybutylene terephthalate, and polyethylene naphthalate; polyolefin films such as polyethylene and polypropylene; films of polycarbonate, polyamide, polyimide, polyamideimide, polyetherimide, polyether sulfide, polyether sulfone, polyether ketone, polyphenylene ether, polyphenylene sulfide, poly(meth)acrylate, polysulfone, and liquid crystal polymer. The thickness of the support film may be, for example, 1 to 250 μm.

[0061] As a method of applying the first varnish onto the support film, the varnish can be applied using a knife coater, a roll coater, an applicator, a comma coater, a die coater, etc.

[0062] When volatilizing the solvent from the applied first varnish, the heating conditions can be appropriately set according to the solvent used, etc. The heating conditions may be, for example, 40 to 150°C for 0.1 to 30 minutes.

[0063] As a method of attaching the first thermosetting resin film onto the support member 2, methods such as roll lamination, vacuum lamination, and heat pressing can be mentioned, for example. Lamination can be performed, for example, under temperature conditions of 0 to 120°C.

[0064] The first thermosetting resin layer 4 can also be formed, for example, by a method including a step of applying a first varnish containing a first thermosetting resin component onto the support member 2 and volatilizing the solvent from the applied first varnish.

[0065] The step of providing the light absorption layer 6 on the first thermosetting resin layer 4 may include, for example, a step of forming the light absorption layer 6 by attaching a resin film for the light absorption layer onto the first thermosetting resin layer 4.

[0066] As a method of attaching the resin film for the light absorption layer onto the first thermosetting resin layer 4, methods such as roll lamination, vacuum lamination, and heat pressing can be mentioned, for example. Lamination can be performed, for example, under temperature conditions of 0 to 120°C.

[0067] The step of providing the second thermosetting resin layer 8 on the light absorption layer 6 may include, for example, a step of preparing a second varnish containing a second thermosetting resin component, a step of coating the second varnish on a support film, and volatilizing a solvent from the coated second varnish to produce a second thermosetting resin film, and a step of pasting the second thermosetting resin film to form the second thermosetting resin layer 8. The second thermosetting resin layer 8 can also be formed, for example, by a method including a step of coating a second varnish containing a second thermosetting resin component on the light absorption layer 6 and volatilizing a solvent from the coated second varnish.

[0068] The method of forming the second thermosetting resin layer 8 (such as the preparation of the second varnish) is the same as the method of forming the first thermosetting resin layer 4 (such as the preparation of the first varnish). Therefore, the overlapping description is omitted here.

[0069] The three-layer film having the first thermosetting resin layer 4, the light absorption layer 6, and the second thermosetting resin layer 8 can be obtained, for example, by a method including a step of pasting the first thermosetting resin film and the resin film for the light absorption layer to produce a two-layer film, and a step of pasting the resin film for the light absorption layer and the second thermosetting resin film in the two-layer film.

[0070] In the method of using the three-layer film, examples of the method of pasting the first thermosetting resin film and the resin film for the light absorption layer, the method of pasting the resin film for the light absorption layer and the second thermosetting resin film in the two-layer film, and the method of pasting the three-layer film on the support member 2 include methods such as roll lamination, vacuum lamination, and heat pressing. The lamination can be performed, for example, under temperature conditions of 30 to 120°C.

[0071] [Method of manufacturing a semiconductor device] The manufacturing method of the semiconductor device according to this embodiment includes a step of preparing the above-described temporary fixing laminate (preparation step), a step of temporarily fixing a semiconductor member to a support member via a first thermosetting resin layer, a light absorption layer, and a second thermosetting resin layer (temporary fixing step), a step of processing the semiconductor member temporarily fixed to the support member (processing step), and a step of irradiating the light absorption layer of the temporary fixing laminate with light including ultraviolet light from the support member side to separate the semiconductor member from the support member (separation step).

[0072] (Preparation step) In the preparation step, in order to manufacture a semiconductor device, while processing a semiconductor member, a temporary fixing laminate 10 for temporarily fixing the semiconductor member to a support member is prepared.

[0073] (Temporary fixing step) FIGS. 2(a) and 2(b) are schematic cross-sectional views showing an embodiment of the manufacturing method of a semiconductor device. In the temporary fixing step, a semiconductor member 40 is temporarily fixed to a support member 2 via a first thermosetting resin layer 4, a light absorption layer 6, and a second thermosetting resin layer 8. The second thermosetting resin layer 8 has a surface S on the side opposite to the light absorption layer 6. The laminate 20 includes the temporary fixing laminate 10 and the semiconductor member 40 disposed on the surface S of the second thermosetting resin layer 8 of the temporary fixing laminate 10. In the temporary fixing step, for example, the semiconductor member 40 can be temporarily fixed to the support member 2 by curing the first thermosetting resin layer 4 and the second thermosetting resin layer 8 in a state where the semiconductor member 40 is disposed on the second thermosetting resin layer 8 (see FIG. 2(a)) (see FIG. 2(b)). In other words, the semiconductor member 40 can be temporarily adhered to the support member 2 via a first cured product layer 4c including a cured product of the first thermosetting resin component, a light absorption layer 6, and a second cured product layer 8c including a cured product of the second thermosetting resin component.

[0074] Examples of the semiconductor member 40 include those having a semiconductor substrate 42 and a redistribution layer 44. When the semiconductor member 40 has the semiconductor substrate 42 and the redistribution layer 44, the semiconductor member 40 is temporarily fixed to the support member 2 via the first cured product layer 4c, the light absorption layer 6, and the second cured product layer 8c in a direction in which the redistribution layer 44 is located on the second cured product layer 8c side. The semiconductor member 40 may further have external connection terminals. The semiconductor substrate 42 may be a semiconductor wafer or a semiconductor chip obtained by dividing a semiconductor wafer. In the example of FIG. 2(a), a plurality of semiconductor members 40 are arranged on the surface S of the second cured product layer 8c, but the number of semiconductor members 40 may be one. The thickness of the semiconductor member 40 may be 1 to 1000 μm, 10 to 500 μm, or 20 to 200 μm from the viewpoint of suppressing cracking during transportation, processing steps, etc. in addition to miniaturization and thinning of the semiconductor device.

[0075] The semiconductor member 40 disposed on the second thermosetting resin layer 8 is pressure-bonded to the second thermosetting resin layer 8 using, for example, a vacuum press or a vacuum laminator. When using a vacuum press, the pressure-bonding conditions may be a pressure of 1 hPa or less, a pressure-bonding pressure of 1 MPa, a pressure-bonding temperature of 120 to 200°C, and a holding time of 100 to 300 seconds. When using a vacuum laminator, the pressure-bonding conditions may be, for example, a pressure of 1 hPa or less, a pressure-bonding temperature of 60 to 180°C or 80 to 150°C, a lamination pressure of 0.01 to 1.0 MPa or 0.1 to 0.7 MPa, and a holding time of 1 to 600 seconds or 30 to 300 seconds.

[0076] After the semiconductor member 40 is disposed on the second thermosetting resin layer 8, the second thermosetting resin component in the second thermosetting resin layer 8 is thermally cured or photocured to form a second cured product layer 8c containing a cured product of the second thermosetting resin component. At this time, the first thermosetting resin component in the first thermosetting resin layer 4 is also thermally cured or photocured to form a first cured product layer 4c containing a cured product of the first thermosetting resin component. Thereby, the semiconductor member 40 is temporarily fixed to the support member 2 via the first cured product layer 4c, the light absorption layer 6, and the second cured product layer 8c, and a laminate 30 having a temporarily fixed laminate 10c after curing and a semiconductor member 40 temporarily fixed on the surface S of the second cured product layer 8c of the temporarily fixed laminate 10c after curing is formed. The conditions for thermal curing may be, for example, 300 °C or lower or 100 to 250 °C for 1 to 180 minutes or 1 to 120 minutes.

[0077] (Processing step) FIGS. 3(a), 3(b), and 3(c) are schematic cross-sectional views showing an embodiment of a method for manufacturing a semiconductor device. In the processing step, the semiconductor member 40 temporarily fixed to the support member 2 is processed. FIG. 3(a) shows an example of processing including thinning of the semiconductor substrate, and the processed semiconductor member 40a has a thinned semiconductor substrate 42a and a rewiring layer 44. The processing of the semiconductor member is not limited thereto, and may include, for example, thinning of the semiconductor substrate, division (dicing) of the semiconductor member, formation of through electrodes (through-silicon vias), etching treatment, plating reflow treatment, sputtering treatment, or a combination thereof.

[0078] After the processing of the semiconductor member 40, as shown in FIG. 3(b), a sealing layer 50 for sealing the processed semiconductor member 40a is formed. The sealing layer 50 can be formed using a sealing material commonly used for the manufacture of semiconductor elements. For example, the sealing layer 50 may be formed of a thermosetting resin composition. Examples of the thermosetting resin composition used for the sealing layer 50 include epoxy resins such as cresol novolac epoxy resin, phenol novolac epoxy resin, biphenyl diepoxy resin, and naphthol novolac epoxy resin. The sealing layer 50 and the thermosetting resin composition for forming the sealing layer 50 may contain additives such as fillers and flame retardants.

[0079] The sealing layer 50 is formed, for example, using a solid material, a liquid material, a fine-grained material, or a sealing film. When using a sealing film, a compression sealing molding machine, a vacuum laminating device, etc. are used. For example, by using these devices to coat the processed semiconductor member 40a with a sealing film heat-melted under the conditions of 40 to 180 °C (or 60 to 150 °C), 0.1 to 10 MPa (or 0.5 to 8 MPa), and 0.5 to 10 minutes, the sealing layer 50 can be formed. The thickness of the sealing film is adjusted so that the sealing layer 50 is equal to or greater than the thickness of the processed semiconductor member 40a. The thickness of the sealing film may be 50 to 2000 μm, 70 to 1500 μm, or 100 to 1000 μm.

[0080] After forming the sealing layer 50, as shown in FIG. 3(c), the sealing layer 50, the second cured layer 8c, the light absorption layer 6, and the first cured layer 4c may be divided into a plurality of parts each containing one processed semiconductor member 40a.

[0081] Figs. 4(a) and 4(b) are schematic cross-sectional views showing an embodiment of a method for manufacturing a semiconductor device. As shown in Fig. 4(a), light A is irradiated onto the light absorption layer 6 from the side of the support member 2 to separate the processed semiconductor member 40a from the support member 2. The light A may be light including ultraviolet light, or may be light including a wavelength of 200 to 400 nm (near ultraviolet light). By irradiating the light A, the light absorption layer 6 absorbs the ultraviolet light of the light A and generates heat, so that, for example, interfacial peeling occurs between the first cured product layer 4c and the light absorption layer 6, and the processed semiconductor member 40a can be easily separated from the support member 2. In order to separate the processed semiconductor member 40a from the support member 2, a slight stress may be applied to the processed semiconductor member 40a together with the irradiation of the light A.

[0082] Examples of the light source of the light A in the separation step include a low-pressure mercury lamp, a high-pressure mercury lamp, an ultra-high-pressure mercury lamp, a laser, and the like. Among these, the light source of the light A may be a laser.

[0083] Examples of the laser include solid lasers such as YAG lasers, liquid lasers such as dye lasers, and gas lasers such as excimer lasers. Among these, the laser may be an excimer laser.

[0084] Examples of the excimer laser include an ArF excimer laser (oscillation wavelength: 193 nm), a KrF excimer laser (oscillation wavelength: 248 nm), a XeCl excimer laser (oscillation wavelength: 308 nm), a XeF excimer laser (oscillation wavelength: 351 nm), and the like.

[0085] The irradiation conditions of the laser include an applied voltage, a pulse width, an irradiation time, an irradiation distance (distance between the light source and the light absorption layer), an irradiation energy, etc., and these can be arbitrarily set according to the number of irradiations and the like. From the viewpoint of reducing the damage to the processed semiconductor member 40a, the irradiation conditions for separating the processed semiconductor member 40a with a small number of times may be set.

[0086] On the separated and processed semiconductor member 40a, a part of the second cured material layer 8c may adhere as a residue. The adhered residue is removed as shown in FIG. 4(b). The adhered residue may be removed, for example, by washing with a solvent or peeled off by peeling. The solvent is not particularly limited, and examples thereof include ethanol, methanol, isopropyl alcohol, toluene, xylene, acetone, methyl ethyl ketone, methyl isobutyl ketone, hexane, and the like. For removing the adhered residue, the processed semiconductor member 40a may be immersed in a solvent, or ultrasonic cleaning may be performed. The processed semiconductor member 40a may be heated at a low temperature of about 100° C. or lower.

[0087] By the above-exemplified method, a semiconductor element 60 including the processed semiconductor member 40a can be obtained. A semiconductor device can be manufactured by connecting the obtained semiconductor element 60 to another semiconductor element or a substrate for mounting a semiconductor element.

Example

[0088] Hereinafter, the present disclosure will be described more specifically with reference to examples (manufacturing examples). However, the present disclosure is not limited to these examples (manufacturing examples).

[0089] [Production of thermosetting resin film] (Manufacturing Example 1-1, Manufacturing Example 1-2, and Manufacturing Example 1-3) In the production of the thermosetting resin film, the following components were used.

[0090] (A) Thermoplastic resin (A-1) Maleic anhydride-modified styrene·ethylene·butylene·styrene block copolymer (trade name: FG1924GT, manufactured by Kuraray Polymer Japan Co., Ltd., styrene content: 13% by mass), used as a 25% by mass xylene solution (A-2) Maleic anhydride-modified styrene-ethylene-butylene-styrene block copolymer (trade name: FG1901GT, manufactured by Kuraray Polymer Japan Co., Ltd., styrene content: 30% by mass), used as a 25% by mass xylene solution (B) Thermosetting resin (B-1) Dicyclopentadiene type epoxy resin (trade name: HP7200H, manufactured by DIC Corporation), component (B-1) is used as a 50% by mass cyclohexanone solution (C) Curing accelerator (C-1) Imidazole derivative (trade name: 2PZ-CN, manufactured by Shikoku Kasei Kogyo Co., Ltd.), used as a 10% by mass cyclohexanone solution (D) Antioxidant (D-1) Hindered phenol derivative (trade name: AO-60, manufactured by Adeka Corporation), used as a 10% by mass cyclohexanone solution

[0091] The materials shown in Table 1 were used in the parts by mass shown in Table 1 (the values in Table 1 mean non-volatile components). This was mixed with 302.4 parts by mass of toluene and 4.5 parts by mass of cyclohexanone as solvents to obtain a varnish. The obtained varnish was applied to the release-treated surface of a support film (Purex A31B (trade name, light release type, polyethylene terephthalate (PET) film, Toyobo Film Solutions Co., Ltd., thickness: 38 μm)) using a precision coater. The solvent was removed by heating the coating film at 100 °C for 10 minutes to obtain a thermosetting resin film of Production Example 1-1 with a thickness of 10 μm, a thermosetting resin film of Production Example 1-2 with a thickness of 30 μm, and a thermosetting resin film of Production Example 1-3 with a thickness of 50 μm. A protective film (Purex A70J (trade name, heavy release type, PET film, Toyobo Film Solutions Co., Ltd., thickness: 38 μm)) was laminated to the surface of the obtained thermosetting resin film opposite to the support film in a direction such that its release-treated surface was in contact with the thermosetting resin film.

[0092]

Table 1

[0093] [Preparation of Light Absorbing Layer (Resin Film for Light Absorbing Layer)] (Production Example 2-1) [Preparation of Polyamide Imide (PAI) Resin Film] HPC-5012 (polyamide imide resin, 32% by mass NMP (N-methylpyrrolidone) solution, manufactured by Resonac Co., Ltd.) was weighed so that the solid content was 5 parts by mass, and HP-7200H (dicyclopentadiene type epoxy resin, 50% by mass cyclohexanone solution, manufactured by DIC Corporation) was weighed so that the solid content was 2.5 parts by mass, and they were stirred with a stirrer. Then, 0.05 part by mass of a curing accelerator (1-benzyl-2-methylimidazole, 1B-2MZ, manufactured by Shikoku Chemicals Corporation) was added, and further stirred and degassed to obtain a varnish containing polyamide imide (PAI) resin. The prepared varnish was coated on a polyethylene terephthalate (PET) film (manufactured by Toyobo Film Solutions Co., Ltd., A3100-25) with a knife coater so that the thickness was 20 μm, and dried in a dryer at 80°C for 5 minutes and at 150°C for 5 minutes to obtain a PAI resin film of Production Example 2-1 with a thickness of 20 μm.

[0094] [Preparation of Polyimide (PI) Resin Film] Kapton film (Toray DuPont Co., Ltd., thickness 25 μm) was prepared as the PI resin film.

[0095] [Preparation and Evaluation of Test Laminates] (Example 1) [Preparation of Temporary Fixing Laminates] For the formation of the first curable resin layer, the curable resin film of Production Example 1-1 was used as the first curable resin film. For the formation of the light absorption layer, the PAI resin film of Production Example 2-1 was used. For the formation of the second curable resin layer, the curable resin film of Production Example 1-3 was used as the second curable resin film. First, the support film was peeled off from the first curable resin film and the PAI resin film, and the exposed surfaces were bonded together using a pressure type roll laminator under the conditions of a pressure of 0.2 MPa, a temperature of 100 °C, and a speed of 0.2 m / min to obtain a two-layer film. Next, the protective film on the PAI resin film side of the two-layer film of Production Example 2-1 and the support film of the second curable resin film were peeled off, and the exposed surfaces were bonded together using a pressure type roll laminator under the conditions of a pressure of 0.2 MPa, a temperature of 100 °C, and a speed of 0.2 m / min to obtain a three-layer film. Next, the protective film on the first curable resin film side of the three-layer film was peeled off, and on a glass substrate (product name: Eagle XG, manufactured by CORNING, size: 20 mm × 20 mm, thickness: 0.7 mm) as a support member, using a vacuum pressure type laminator, the three-layer film was laminated under the conditions of a pressure of 0.5 MPa, a temperature of 100 °C, and a pressing time of 60 seconds with the peeled surface in contact with the support member, thereby producing a temporary fixing laminate of Example 1 including the support member, the first curable resin layer, the light absorption layer, and the second curable resin layer in this order.

[0096] <Fabrication of Test Laminates> Next, the protective film on the side of the temporary fixing laminate of Example 1 was peeled off, and a silicon wafer (size: 20 mm × 20 mm, thickness: 150 μm) as a semiconductor member was laminated on the second curable resin layer using a vacuum pressure type laminator under the conditions of a pressure of 0.5 MPa, a temperature of 100 °C, and a pressing time of 60 seconds. Then, by heating at 200 °C for 1 hour, the first curable resin layer and the second curable resin layer were cured to produce a test laminate of Example 1 having a semiconductor member temporarily fixed to the support member.

[0097] <Evaluation of Test Laminates> ·Evaluation of Separability Regarding the test laminate of Example 1, ultraviolet laser light was irradiated under the condition of a wavelength of 355 nm using a UV laser marker (PU-L3A manufactured by Laser Works Co., Ltd., beam diameter: 20 μm). The light irradiation by the laser was performed from the side of the support member (glass substrate) of the test laminate, and the irradiation conditions of frequency, scanning speed, irradiation energy, and irradiation energy density (calculated value) shown in Table 2 were used. For the evaluation of separability, when the silicon wafer was separated from the glass substrate by applying an external force after the light irradiation by the laser, it was regarded as "A" with excellent separability, and when the silicon wafer did not separate from the glass substrate even when an external force was applied, it was evaluated as "B". The results are shown in Table 2.

[0098] ·Evaluation of residue removability After performing the above evaluation of separability, the removability of the residue (mainly the residue of the first cured product layer in which the first curable resin layer was cured and the residue of the light absorption layer) adhering to the support member (glass substrate) side and the residue (mainly the residue of the second cured product layer in which the second curable resin layer was cured) adhering to the semiconductor member (silicon wafer) side was evaluated. For the residue adhering to the support member side, peeling (peel-off) was performed, and when the removal of the residue was extremely easy, it was evaluated as "A", when the removal was easy, it was evaluated as "B", when the removal was possible, it was evaluated as "C", and when the removal was insufficient, it was evaluated as "D". The results are shown in Table 2. Also, for the residue adhering to the semiconductor member side, peeling (peel-off) was performed, and when the removal of the residue was extremely easy, it was evaluated as "A", when the removal was easy, it was evaluated as "B", when the removal was possible, it was evaluated as "C", and when the removal was insufficient, it was evaluated as "D". The results are shown in Table 2.

[0099] ·Observation of the surface of the support member (glass substrate) After evaluating the removability of the above-mentioned residue, the surface of the support member (glass substrate) was observed, and the number of depressions (irradiation marks of the UV laser) on the surface of the support member was confirmed. A metal microscope was used for observing the surface of the support member (glass substrate). The evaluation was as follows: when no irradiation marks were observed in a measurement range of 1 cm × 1 cm, it was rated as "A"; when the number of irradiation marks was 1 in a measurement range of 1 cm × 1 cm, it was rated as "B"; when the number of irradiation marks was 2 or more in a measurement range of 1 cm × 1 cm, it was rated as "C". The results are shown in Table 2.

[0100] (Example 2) As the first curable resin film, except that the curable resin film of Production Example 1-2 was used, the temporary fixing laminate of Example 2 and the test laminate of Example 2 were produced in the same manner as in Example 1. Regarding the produced test laminate of Example 2, the test laminate was evaluated under the same conditions as in Example 1. The results are shown in Table 2.

[0101] (Example 3) The same ones as the temporary fixing laminate of Example 1 and the test laminate of Example 1 were used as the temporary fixing laminate of Example 3 and the test laminate of Example 3. Regarding the test laminate of Example 3, the test laminate was evaluated under the same conditions as in Example 1, except that the irradiation conditions (frequency, scanning speed, irradiation energy, and irradiation energy density (calculated value)) were changed to the irradiation conditions shown in Table 2. The results are shown in Table 2.

[0102] (Example 4) Except that the PAI resin film was changed to a PI resin film, the temporary fixing laminate of Example 4 and the test laminate of Example 4 were produced in the same manner as in Example 1. Regarding the produced test laminate of Example 4, the test laminate was evaluated under the same conditions as in Example 3. The results are shown in Table 2.

[0103] (Comparative Example 1) <Fabrication of Temporary Fixing Laminate> For the formation of the curable resin layer, the curable resin films of Production Examples 1-3 were used as the curable resin film. First, on a glass substrate (trade name: Eagle XG, manufactured by CORNING, size: 20 mm × 20 mm, thickness: 0.7 mm) as a support member, HPC-5012 (polyamideimide resin, 32 mass% NMP (N-methylpyrrolidone) solution, manufactured by Resonac Co., Ltd.) was formed into a film under the conditions of 2000 rpm and 30 seconds using a spin coater. By heating at 80 °C for 10 minutes and 150 °C for 10 minutes to remove the solvent, a glass substrate with a light absorption layer having a thickness of 10 μm was obtained. Subsequently, the support film was peeled off from the curable resin film, and the exposed surface was attached to the light absorption layer side of the glass substrate with a light absorption layer using a vacuum pressure laminator under the conditions of a pressure of 0.5 MPa, a temperature of 100 °C, and a pressurization time of 60 seconds. Thereby, a temporary fixing laminate of Comparative Example 1 including a support member, a light absorption layer, and a curable resin layer in this order was produced. The temporary fixing laminate of Comparative Example 1 is a laminate obtained by removing the first curable resin layer from the temporary fixing laminate of Example 1.

[0104] <Fabrication and Evaluation of Test Laminates> Next, the protective film on the curable resin layer side of the temporary fixing laminate of Comparative Example 1 was peeled off, and a silicon wafer (size: 20 mm × 20 mm, thickness: 150 μm) as a semiconductor member was laminated on the curable resin layer using a vacuum pressure laminator under the conditions of a pressure of 0.5 MPa, a temperature of 100 °C, and a pressurization time of 60 seconds. Then, by heating at 270 °C for 1 hour, the curable resin layer was cured to produce a test laminate of Comparative Example 1 having a semiconductor member temporarily fixed to the support member. In the evaluation of the separability, the test laminate of Comparative Example 1 was evaluated under the same conditions as in Example 1 except that the irradiation conditions (frequency, scanning speed, irradiation energy, and irradiation energy density (calculated value)) were changed to the irradiation conditions shown in Table 2. The results are shown in Table 2.

[0105] (Comparative Example 2) HPC-5012 (a polyamideimide resin, a 32 mass% NMP (N-methylpyrrolidone) solution, manufactured by Resonac Co., Ltd.) was changed to PIX-1400 (a polyimide resin, a 16 mass% NMP (N-methylpyrrolidone) solution, manufactured by HD Microsystems Co., Ltd.), and in the same manner as in Comparative Example 1, a temporary fixing laminate of Comparative Example 2 and a test laminate of Comparative Example 2 were produced. Regarding the produced test laminate of Comparative Example 2, the test laminate was evaluated under the same conditions as in Comparative Example 1. The results are shown in Table 2.

[0106]

Table 2

[0107] As shown in Table 2, the temporary fixing laminates (test laminates) of Examples 1 to 4 were excellent in the evaluation of the surface observation of the support member, despite the irradiation conditions being severe, compared to the temporary fixing laminates (test laminates) of Comparative Examples 1 and 2. From these results, it was confirmed that the method for manufacturing a semiconductor device of the present disclosure can suppress damage to the support member in a method for manufacturing a semiconductor device including a step of processing a semiconductor member temporarily fixed to the support member.

Explanation of Signs

[0108] 2... Support member, 4... First thermosetting resin layer, 4c... First cured product layer, 6... Light absorption layer, 8... Second thermosetting resin layer, 8c... Second cured product layer, 10... Temporary fixing laminate, 10c... Temporary fixing laminate after curing, 20, 30... Laminates, 40... Semiconductor member, 40a... Processed semiconductor member, 42... Semiconductor substrate, 42a... Thinned semiconductor substrate, 44... Redistribution layer, 50... Sealing layer, 60... Semiconductor element.

Claims

1. A step of preparing a temporary fixing laminate having a support member, a first thermosetting resin layer containing a first thermosetting resin component, a light absorption layer that absorbs ultraviolet light and generates heat, and a second thermosetting resin layer containing a second thermosetting resin component in this order; A step of temporarily fixing a semiconductor member to the support member via the first thermosetting resin layer, the light absorption layer, and the second thermosetting resin layer; A step of processing the semiconductor member temporarily fixed to the support member; A step of irradiating the light absorption layer of the temporary fixing laminate with light containing ultraviolet light from the support member side to separate the semiconductor member from the support member; comprising A method for manufacturing a semiconductor device.

2. The light absorption layer contains a polyamideimide resin, The method for manufacturing a semiconductor device according to claim 1.

3. The first thermosetting resin component and the second thermosetting resin component contain a thermoplastic resin and a thermosetting resin, The method for manufacturing a semiconductor device according to claim 1 or 2.

4. A temporary fixing laminate having a support member, a first thermosetting resin layer containing a first thermosetting resin component, a light absorption layer that absorbs ultraviolet light and generates heat, and a second thermosetting resin layer containing a second thermosetting resin component in this order. A temporary fixing laminate.

5. The light absorption layer contains a polyamideimide resin, The temporary fixing laminate according to claim 4.

6. The first thermosetting resin component and the second thermosetting resin component contain a thermoplastic resin and a thermosetting resin, The temporary fixing laminate according to claim 4 or 5.

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