Sensor device for semiconductor manufacturing apparatus, operation method for sensor device, and system including sensor device

Abstract

To provide a sensor device that measures a magnetic field inside a semiconductor manufacturing apparatus, and a system that can adjust the magnetic field inside the semiconductor manufacturing apparatus on the basis of the operation of the sensor device or can adjust the position where a wafer or the like is disposed.SOLUTION: A magnetic field sensor device configured to measure the magnetic field includes a sensor unit configured to generate sensing data by sensing the magnetic field, and a processing unit configured to generate the magnetic data on the basis of the sensing data. The sensor unit includes a sensor substrate, a central sensor configured to exist at a center of the sensor substrate on the sensor substrate, a reference axis sensor disposed along a straight line passing the center of the sensor substrate on the sensor substrate, and a first circumference sensor disposed along a circumference with a first radius from the center on the sensor substrate. Each of the central sensor, the reference axis sensor, and the first circumference sensor measures the magnetic field that passes the central sensor, the reference axis sensor, and the first circumference sensor.SELECTED DRAWING: Figure 5

Description

Technical Field

[0001] The present invention relates to a semiconductor manufacturing system, and more particularly, to a sensor device for a semiconductor manufacturing apparatus, a method of operating the sensor device, and a system including the sensor device.

Background Art

[0002] In the manufacture of semiconductor devices, various equipment is used. Although semiconductor manufacturing apparatuses can utilize various methods, typically, there are methods using light, methods using extreme ultraviolet rays, or methods using plasma. Among these, a semiconductor manufacturing apparatus using a plasma method can utilize an electric field or a magnetic field to control the plasma.

[0003] A manufacturing apparatus that uses a magnetic field to control plasma can manufacture semiconductor devices efficiently by controlling the magnetic field generated by a magnetic coil. Therefore, the magnetic field inside a semiconductor manufacturing apparatus can be measured, and based on the measurement results, the magnetic field can be adjusted to correct or design the process more efficiently. For this purpose, a device for measuring the magnetic field inside a semiconductor manufacturing apparatus is required.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Patent Document 3

Patent Document 4

Patent Document 5

Patent Document 6

Patent Document 7

Patent Document 8

Patent Document 9

Summary of the Invention

Problems to be Solved by the Invention

[0005] The present invention has been made in view of the above - mentioned prior art, and an object of the present invention is to provide a sensor device for measuring a magnetic field inside a semiconductor manufacturing apparatus, and a system capable of adjusting the magnetic field inside the semiconductor manufacturing apparatus or adjusting the position where a wafer or the like is placed based on the operation of the sensor device.

Means for Solving the Problems

[0006] A magnetic field sensor device configured to measure a magnetic field according to an embodiment of the present invention includes a sensor unit configured to sense the magnetic field and generate sensed data, and a processing unit configured to generate magnetic field data based on the sensed data. The sensor unit includes a sensor substrate, a center sensor configured to be located at the center of the sensor substrate on the sensor substrate, a reference axis sensor arranged along a straight line passing through the center of the sensor substrate on the sensor substrate, and a first circumferential sensor arranged along a circumference of a first radius from the center on the sensor substrate. Each of the center sensor, the reference axis sensor, and the first circumferential sensor measures a magnetic field passing through the center sensor, the reference axis sensor, and the first circumferential sensor.

[0007] According to an embodiment of the present invention, a method of operating a semiconductor manufacturing apparatus for calibrating a magnetic field in a chamber includes measuring a first component, a second component, and a third component of the magnetic field passing through each of the plurality of sensors by the plurality of sensors, and generating magnetic field data including a first component measurement value, a second component measurement value, and a third component measurement value; comparing the first magnetic field data with reference magnetic field data including a first component reference value, a second component reference value, and a third component reference value of each of the plurality of sensors to generate offset magnetic field data; and calibrating the magnetic field based on the offset magnetic field data. The plurality of sensors includes a central sensor disposed at the center of the sensor substrate on the sensor substrate, a reference axis sensor disposed along a straight line passing through the center of the sensor substrate on the sensor substrate, and a first circumferential sensor disposed on a circumference of a first radius from the center of the sensor substrate on the sensor substrate.

[0008] According to an embodiment of the present invention, a method of operating a semiconductor manufacturing apparatus for central calibration of a transfer module includes measuring a first component, a second component, and a third component of a magnetic field passing through each of the plurality of sensors by the plurality of sensors to generate magnetic field data; determining, based on the magnetic field data, whether a sensor device including the plurality of sensors disposed by the transfer module is disposed at the center of an electrostatic chuck; generating central calibration data based on the magnetic field data when the sensor device is not disposed at the center of the electrostatic chuck; and performing the central calibration of the transfer module based on the central calibration data. The plurality of sensors includes a central sensor disposed at the center of the sensor substrate on the sensor substrate, a reference axis sensor disposed along a straight line passing through the center of the sensor substrate on the sensor substrate, and a first circumferential sensor disposed on a circumference of a first radius from the center of the sensor substrate on the sensor substrate.

[0009] A semiconductor manufacturing system according to an embodiment of the present invention includes a semiconductor manufacturing apparatus configured to manufacture a semiconductor device, a system controller configured to control the semiconductor manufacturing apparatus, and a sensor device configured to measure a magnetic field in a chamber of the semiconductor manufacturing apparatus. The semiconductor manufacturing apparatus includes an electrostatic chuck configured to position a wafer at an upper portion and a transfer module configured to place the wafer on the electrostatic chuck. The sensor device includes a sensor substrate, a center sensor configured to be located at the center of the sensor substrate on the sensor substrate, a reference axis sensor arranged along a straight line passing through the center of the sensor substrate on the sensor substrate, and a first circumferential sensor arranged along a circumference of a first radius from the center on the sensor substrate.

Advantages of the Invention

[0010] According to an embodiment of the present invention, there is provided a sensor device that measures a magnetic field inside a semiconductor manufacturing apparatus, and a system that can adjust the magnetic field inside the semiconductor manufacturing apparatus or adjust the position where a wafer or the like is placed based on the sensor device.

Brief Description of the Drawings

[0011]

Figure 1

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Figure 12

Embodiments for Carrying Out the Invention

[0012] Hereinafter, embodiments of the present invention will be described clearly and in detail so that those having ordinary knowledge in the technical field of the present invention can easily implement the present invention.

[0013] FIG. 1 is a block diagram showing a semiconductor manufacturing system 1000 according to an embodiment of the present invention. Referring to FIG. 1, the semiconductor manufacturing system 1000 includes a system controller 1100 and a semiconductor manufacturing apparatus 1200. The system controller 1100 can include a memory 1110, a CPU (central processing unit) 1120, and a communication block 1130, and the semiconductor manufacturing apparatus 1200 can include a sensor device 100. Referring to FIG. 1, a semiconductor manufacturing system according to an embodiment of the present invention will be described. manufacture system) 1000 and a semiconductor manufacturing apparatus 1200 (semiconductor manufacture equipment). The system controller 1100 can include a memory 1110, a CPU (central processing unit) 1120, and a communication block 1130, and the semiconductor manufacturing apparatus 1200 can include a sensor device 100. Referring to FIG. 1, a semiconductor manufacturing system according to an embodiment of the present invention will be described.

[0014] The system controller 1100 can control the operation of the semiconductor manufacturing system 1000. In one embodiment, the system controller 1100 can control the semiconductor manufacturing system 1000 based on controlling the semiconductor manufacturing apparatus 1200. For example, the system controller 1100 can control the semiconductor manufacturing apparatus 1200 based on the control signal CTRL. The system controller 1100 can control various components included in the semiconductor manufacturing apparatus 1200 (for example, the transfer module in FIG. 2, etc.). FIG. 1 shows the system controller 1100 controlling one semiconductor manufacturing apparatus 1200, but embodiments of controlling a plurality of semiconductor manufacturing apparatuses should also be understood to fall within the scope of the present invention.

[0015] The memory 1110 can store data necessary for controlling the semiconductor manufacturing apparatus 1200. In one embodiment, the memory 1110 can include various types of memory elements. For example, the memory 1110 can include a non-volatile memory element (for example, a flash memory element) or a volatile memory element (for example, RAM (random access memory)). The memory 1110 can store various algorithms or data related to the algorithms necessary for the operation of the semiconductor manufacturing apparatus 1200, and can store the device data DATA received from the semiconductor manufacturing apparatus 1200.

[0016] In one embodiment, the memory 1110 can store reference magnetic field data. The reference magnetic field data can be data related to the magnetic field necessary for the semiconductor manufacturing apparatus 1200 to manufacture semiconductor devices based on optimal efficiency or yield. For example, the memory 1110 can store the reference magnetic field data MD_R shown and described in FIG. 8. In one embodiment, the memory 1110 can store offset magnetic field data. For example, the memory 1110 can store offset magnetic field data including the offset sensing data table SDT_O in FIG. 9.

[0017] CPU 1120 can control system controller 1100. In one embodiment, CPU 1120 can perform various operations and generate control signals. For example, CPU 1120 can generate control signal CTRL based on device data DATA and the algorithms stored in memory 1110. In one embodiment, CPU 1120 may include an ASIC (application-specific integrated circuit), FPGA (field programmable logic arrays), or accelerator specialized for the operations for generating control signal CTRL. CPU 1120 can generate offset magnetic field data based on the magnetic field data of sensor device 1100 (e.g., magnetic field data MD in FIG. 3) and reference magnetic field data. The offset magnetic field data will be described in more detail with reference to FIG. 9.

[0018] Communication block 1130 can communicate between system controller 1100 and semiconductor manufacturing apparatus 1200. In one embodiment, communication block 1130 can transfer various signals and data between system controller 1100 and semiconductor manufacturing apparatus 1200. For example, communication block 1130 can enable the control signal CTRL generated from CPU 1120 to be transmitted from system controller 1100 to semiconductor manufacturing apparatus 1200, and enable device data DATA to be received from semiconductor manufacturing apparatus 1200 by system controller 1100.

[0019] Semiconductor manufacturing apparatus 1200 can manufacture semiconductor devices. In one embodiment, semiconductor manufacturing apparatus 1200 can be various apparatuses or include various apparatuses. For example, semiconductor manufacturing apparatus 1200 can be a plasma etching apparatus or plasma a (vapor decomposition) device or may include them. The above-described devices are examples and should not be understood as limiting the scope of the present invention. The semiconductor manufacturing apparatus 1200 can transmit apparatus data DATA to the system controller 1100. The semiconductor manufacturing apparatus 1200 may include a sensor device 100 for measuring various factors used in semiconductor device manufacturing.

[0020] The sensor device 100 can measure various factors used in semiconductor device manufacturing. In one embodiment, the sensor device 100 can measure a magnetic field flux. For example, the sensor device 100 can measure the magnetic field used in a semiconductor device. In one embodiment, the sensor device 100 can transmit the magnetic field measurement result to the system controller 1100 in the form of apparatus data DATA. For example, the sensor device 100 can transmit the magnetic field measurement data to the system controller 1100 in the form of apparatus data DATA.

[0021] The sensor device 100 is shown as being located inside the semiconductor manufacturing apparatus 1200, but the scope of the present invention is not limited thereto. If the sensor device 100 does not measure the magnetic field inside the chamber C of the semiconductor manufacturing apparatus 1200, it can be located outside the semiconductor manufacturing apparatus 1200. When the semiconductor manufacturing apparatus 1200 manufactures a semiconductor device, a wafer can be located at the position of the sensor device 100, and the sensor device 100 can be located outside the semiconductor manufacturing apparatus 1200. The sensor device 100 will be described in more detail with reference to FIGS. 3 to 7.

[0022] FIG. 2 is a side view showing the structure of the semiconductor manufacturing apparatus and the sensor device of FIG. 1 according to an embodiment of the present invention. Referring to FIG. 2, the semiconductor manufacturing apparatus 1200 includes a gas injector 1210, a gas discharger 1215, an electrostatic chuck (ESC) 1220, a transfer module (transfer It may include a module 1230, an RF generator 1240, and magnetic coils 1250. Referring to FIG. 2, a semiconductor manufacturing apparatus 1200 and a sensor device 100 as an example according to an embodiment of the present invention will be described in detail. Hereinafter, for convenience of explanation, it will be described on the basis that the semiconductor manufacturing apparatus 1200 is a plasma apparatus, but the scope of the present invention should not be understood to be limited thereto.

[0023] For convenience of explanation, a first direction D1, a second direction D2, and a third direction D3 are referred to. The direction facing the RF generator 1240 perpendicular to the sensor device 100 may be the first direction D1. The direction perpendicular to the first direction D1 and parallel to the horizontal axis of the electrostatic chuck 1220 may be the second direction D2. The direction perpendicular to the first direction D1 and the second direction D2 may be the third direction D3.

[0024] The semiconductor manufacturing apparatus 1200 may include a chamber (C: chamber). The chamber C may be a space in which a vacuum is maintained. For example, the chamber C may be a cylindrical space generated based on the first direction D1, the second direction D2, and the third direction D3. More specifically, the chamber C may be a cylindrical space having a bottom surface (e.g., circular) on a plane formed in the second direction D2 and the third direction D3 and having a height in the first direction D1. The chamber C can provide a semiconductor manufacturing apparatus 1200 with a vacuum environment necessary for manufacturing a semiconductor device. Although the shape of the chamber C is illustrated and described as cylindrical, this is for example only, and the scope of the present invention is not limited thereto, and any chamber C having a shape capable of performing the same or similar functions should be understood to belong to the scope of the present invention. In one embodiment, the chamber C may include an electrostatic chuck 1220 and a sensor device 100 or a wafer therein.

[0025] The gas injector 1210 can inject the gas that serves as the raw material for the plasma of the semiconductor manufacturing apparatus 1200 into the chamber C. Referring to FIG. 2, the gas injector 1210 can be positioned at the uppermost end in the first direction D1 of the chamber C. The gas discharger 1215 can allow the gas injected by the gas injector 1210 to be discharged from the chamber C. The gas discharger 1215 can maintain the air pressure in the chamber C to be close to vacuum based on the gas discharge operation. For example, the gas discharger 1215 can be positioned at the lowermost end in the first direction D1 of the chamber C. The illustration and description of the gas injector 1210 and the gas discharger 1215 are for example purposes only, and the scope of the present invention is not limited thereto.

[0026] The electrostatic chuck 1220 can enable the semiconductor manufacturing process of the semiconductor manufacturing apparatus 1200 to be applied to a wafer. In one embodiment, the electrostatic chuck 1220 may position the wafer at the upper part in the first direction D1, and the manufacturing process of the semiconductor manufacturing apparatus 1200 can be applied to the wafer. The electrostatic chuck 1220 can be positioned parallel to the plane generated in the second direction D2 and the third direction D3. In one embodiment, the electrostatic chuck 1220 may include the sensor device 100 at the upper part in the first direction D1.

[0027] The transfer module 1230 can position the wafer or the sensor device 100 on the electrostatic chuck 1220. In one embodiment, the transfer module 1230 may include a robot arm and a controller for controlling the robot arm. For example, the transfer module 1230 can position the sensor device 100 at the upper part in the first direction D1 of the electrostatic chuck 1220 via the robot arm.

[0028] The RF generator 1240 can generate a voltage for plasma generation. In one embodiment, the RF generator 1240 can operate with an RF oscillator for several frequency ranges to generate plasma. For example, the RF generator 1240 can generate plasma used in the manufacturing process on the wafer based on the gas (e.g., argon gas, oxygen gas, or xenon gas) flowing inside the semiconductor manufacturing apparatus 1200 via the gas injector 1210 and the gas ejector 1215. FIG. 2 shows that the RF generator 1240 is located above the electrostatic chuck 1220 and the sensor device 100 in the first direction D1 and can be parallel, but the scope of the present invention is not limited thereto.

[0029] The magnetic coil 1250 can generate a magnetic field required for manufacturing a semiconductor device. The magnetic coil 1250 can control the density uniformity of the plasma inside the chamber C based on the generation of the magnetic field (e.g., so that the plasma is evenly dispersed). In one embodiment, the magnetic coil 1250 can generate a magnetic field generated inside the chamber C based on a plurality of currents. For example, by adjusting the plurality of currents flowing inside the magnetic coil 1250, the magnetic field inside the chamber C can be generated to control the density uniformity of the plasma.

[0030] Although the magnetic coil 1250 is shown based on being located above the RF generator 1240 in the first direction D1, the scope of the present invention is not limited thereto. Embodiments in which the magnetic coil 1250 is located on the left and right sides in the second direction D2 from the sensor device 100, or embodiments including a magnetic coil located on the left and right sides in the second direction D2 from the magnetic coil 1250 and the sensor device 100 should also be understood to belong to the scope of the present invention.

[0031] The sensor device 100 can measure the magnetic field generated from the magnetic coil 1250. The sensor device 100 can transmit the magnetic field measurement result to the system controller 1100 in FIG. 1. In one embodiment, the sensor device 100 can generate the device data DATA in FIG. 1 based on the magnetic field measurement. For example, the sensor device 100 can transmit the magnetic field measurement result to the system controller 1100 (e.g., the communication block 1130) in the form of the device data DATA.

[0032] The magnetic field generated by the magnetic coil 1250 only enables the semiconductor manufacturing apparatus 1200 to control the process dispersion over the entire wafer. The magnetic field measurement based on the position points of the wafer can play an important part in improving the process efficiency or yield. With reference to the following figures, the sensor device 100 capable of measuring the magnetic field in the semiconductor manufacturing apparatus 1200 for each position point on the wafer will be described. Note that an embodiment in which the magnetic field in the semiconductor manufacturing apparatus 1200 can be adjusted based on the sensor device 100 will be described.

[0033] FIG. 3 is a block diagram showing the sensor device 100 in detail according to an embodiment of the present invention. Referring to FIG. 3, the sensor device 100 may include a power unit 110, a sensor unit 120, a processing unit 130, and a communication unit 140. With reference to FIG. 3, the sensor device 100 according to an embodiment of the present invention will be described in detail.

[0034] The power supply unit 110 can supply power to the sensor device 100. In one embodiment, the power supply unit 110 may include a plurality of batteries. For example, based on the power of the plurality of batteries, the power supply unit 110 can provide power PW to the sensor unit 120, the processing unit 130, and the communication unit 140 of the sensor device 100. In one embodiment, the power supply unit 110 can support wireless charging, and based on the wireless charging, the plurality of internal batteries are charged.

[0035] The sensor unit 120 can sense a magnetic field. In one embodiment, the sensor unit 120 may include a plurality of sensors. For example, the sensor unit 120 may include a hall sensor that can measure a magnetic field respectively. The sensor unit 120 can operate in response to a sensor control signal CTRL_SE received from the communication unit 140, and can provide the sensed magnetic field to the processing unit 130 as sensing data SD for each sensor. The more detailed structure and operation of the sensor unit 120 will be described with reference to FIGS. 5 and 6.

[0036] The processing unit 130 can generate magnetic field data MD included in the device data DATA provided to the system controller 1100 in FIG. 1. In one embodiment, the magnetic field data MD is generated based on the sensing data SD. For example, the processing unit 130 can generate magnetic field data MD for each sensor based on the received sensing data SD for each sensor. The processing unit 130 can transmit the magnetic field data MD to the communication unit 140. The sensing data SD and the magnetic field data MD will be described in more detail with reference to FIG. 7. In one embodiment, the processing unit 130 may include a processor (e.g., CPU, accelerator, ASIC (application - specific integrated circuit), FPGA (field programmable logic arrays), etc.) that can perform the aforementioned operations.

[0037] The communication unit 140 can transmit device data DATA to the system controller 1100 and can receive a control signal CTRL from the system controller 1100. In one embodiment, the control signal CTRL may include a sensor control signal CTRL_SE for controlling the sensor unit 120. For example, the communication unit 140 can transmit the sensor control signal CTRL_SE included in the control signal CTRL to the sensor unit 120. The communication unit 140 can receive magnetic field data MD from the processing unit 130 and can transmit the magnetic field data MD to the system controller 1100 in the form of device data DATA.

[0038] Although the description has been based on the communication unit 140 generating the sensor control signal CTRL_SE and transmitting the sensor control signal CTRL_SE to the sensor unit 120, the scope of the present invention is not limited thereto. It should be understood that embodiments in which the sensor unit 120 senses a magnetic field and generates sensed data SD without control of the communication unit 140 also fall within the scope of the present invention. For example, the sensor unit 120 can continuously sense a magnetic field and generate sensed data SD without separate control of the communication unit 140.

[0039] FIG. 4 is a side view showing the structure of the sensor device 100 of FIG. 3 according to an embodiment of the present invention. FIG. 4 may be a side view of the sensor device 100 of FIG. 3 viewed in the third direction D3. Referring to FIG. 4, the sensor device 100 may include a sensor device substrate (SUB: sensor device substrate) and a sensor unit 120. The sensor unit 120 can correspond to the sensor unit 120 of FIG. 3 and can sense the magnetic field inside the semiconductor manufacturing apparatus 1200. In one embodiment, the sensor unit 120 may be protected by a case or a cover.

[0040] The sensor device substrate SUB can be located below the sensor unit 120 in the first direction D1. In one embodiment, the sensor device substrate SUB may include several units necessary for the operation of the sensor device 100. For example, the sensor device substrate SUB may include the power supply unit 110, the processing unit 130, and the communication unit 140 of FIG. 3. Although FIG. 4 shows the sensor device substrate SUB including the sensor unit 120 above in the first direction D1, the scope of the present invention is not limited thereto, and embodiments in which the sensor unit 120 is located below the sensor device substrate SUB in the first direction D1 should also be understood to belong to the scope of the present invention. In FIG. 4, the width of the sensor device substrate SUB in the second direction D2 is shown to be smaller than the width of the sensor unit 120 in the second direction D2, but it should be understood that the widths of the sensor unit 120 and the sensor device substrate SUB in the second direction D2 may be equal to each other.

[0041] FIG. 5 is a plan view showing the sensor unit 120 of FIG. 3 in detail according to an embodiment of the present invention. Referring to FIG. 5, the sensor unit 120 may include a sensor substrate (SS), a central sensor BC, a first sensor group B1, and a second sensor group B2. Referring to FIG. 5, the sensor unit according to an embodiment of the present invention will be described in detail.

[0042] For convenience of explanation, embodiments of the present invention will be described based on a cylindrical coordinate system. For example, the first direction D1 can correspond to the first direction D1 of FIG. 2 and can refer to the central axis of the sensor substrate SS or the normal direction of the sensor substrate SS. The radial direction DR can refer to the distance and direction from the first direction D1 (or the central axis of the sensor substrate SS). The rotation angle DC can be the magnitude of the angle of rotation from a reference axis (for example, a straight line including the first sensor group B1 described later) with respect to the first direction D1 (or the central axis of the sensor substrate SS) (the magnitude of the rotation angle is referred to in degrees throughout the specification). In one embodiment, the second direction D2 of FIG. 2 can be the radial direction DR where the rotation angle DC is 0 degrees, and the third direction D3 can be the radial direction DR where the rotation angle DC is -90 degrees or 270 degrees.

[0043] The sensor substrate SS may include a plurality of sensors on the upper part in the first direction D1. In one embodiment, the sensor substrate SS can be such that each of the plurality of sensors is connected to the processing unit 130 of FIG. 3. For example, the sensor substrate SS can provide conductive wires connecting each of the plurality of sensors to the processing unit 130. The sensor substrate SS can be the same shape as a wafer. In one embodiment, the sensor substrate SS can be circular and have the same size as the wafer processed by the semiconductor manufacturing apparatus 1200 of FIG. 2. For example, if the radius of the wafer processed by the semiconductor manufacturing apparatus 1200 is 150 mm, the radius of the sensor substrate SS can also be 150 mm. In one embodiment, the sensor substrate SS can include a notch in the same manner as the wafer.

[0044] Each of the plurality of sensors included in the central sensor BC, the first sensor group B1, and the second sensor group B2 (for example, the central sensor BC, the reference axis sensor of the first sensor group B1, and the first circumferential sensor of the second sensor group B2) can measure a plurality of components of the magnetic field generated from the magnetic coil 1250 of FIG. 2. In one embodiment, each of the plurality of components can be orthogonal components. For example, each of the plurality of sensors can sense and measure the radial component DR, the rotation angle component DC, and the first direction D1 component of the magnetic field passing through each sensor based on a cylindrical coordinate system. More specifically, each of the plurality of sensors can measure the magnetic field passing through each sensor based on three components on the cylindrical coordinate system of a vector field. In other examples, each of the plurality of sensors can sense or measure each component of the magnetic field passing through each sensor based on one of various coordinate systems such as a Cartesian coordinate system or a spherical coordinate system.

[0045] In the following, for the sake of convenience of explanation, an embodiment will be described in which each of a plurality of sensors measures components of a magnetic field passing through each of the sensors based on a cylindrical coordinate system. The first component can refer to the component in the radial direction DR of the magnetic field, the second component can refer to the rotational angle DC component of the magnetic field, and the third component can refer to the component in the first direction D1 of the magnetic field.

[0046] The central sensor BC can be located at the center of the sensor substrate SS. In FIG. 5, the central sensor BC may be shown with a black shadow. In one embodiment, the central sensor BC can measure the first to third components of the magnetic field passing through the center of the sensor substrate SS. For example, the third component measured by the central sensor BC can have a negative value that is not zero, and the first component or the second component can be zero.

[0047] The first sensor group B1 can include a plurality of reference axis sensors arranged in a row on the sensor substrate SS along a straight line parallel to the radial direction DR where the rotational angle DC is 0 (zero) or 180 degrees and passing through the central sensor BC. In FIG. 5, the reference axis sensors of the first sensor group B1 may be shown with left diagonal shading. Each of the plurality of reference axis sensors of the first sensor group B1 can measure the first component, the second component, and the third component of the magnetic field passing through each sensor. The first sensor group B1 can sense and measure a change in the first component or the third component in the radial direction DR in response to a change in the position on the radial direction DR from the center of the sensor substrate SS.

[0048] In one embodiment, the plurality of reference axis sensors of the first sensor group B1 may be arranged at uniform intervals. For example, the interval between the first a sensor B1a and the first b sensor B1b may be the first interval d1. Among the first sensor group B1, the reference axis sensors adjacent to the central sensor BC may also be separated by the first interval d1 in the radial direction DR. In one embodiment, the first interval d1 may be determined based on the characteristics of the reference axis sensors of the first sensor group B1. For example, the first interval d1 may be an interval such that the amount of change in the magnetic field (or the amount of change in the first component) between the first a sensor B1a and the first b sensor B1b is greater than or equal to the magnetic field measurement sensitivity of the reference axis sensor. Similarly, as another example, the first interval d1 may be an interval such that the amount of change in the magnetic field between the central sensor BC and each of the reference axis sensors of the adjacent first sensor group B1 is greater than or equal to the magnetic field measurement sensitivity of the sensor.

[0049] Referring to FIG. 5, the arrangement of the reference axis sensors of the first sensor group B1 illustrated and described is for example only, and the scope of the present invention is not limited thereto. It should be understood that embodiments in which the interval between sensors increases as the distance from the central sensor BC increases, or embodiments having any arrangement interval, also belong to the scope of the present invention. Embodiments in which the first sensor group B1 is parallel to the radial direction DR of any rotation angle DC (i.e., a direction not parallel to the second direction D2 in FIG. 2) and is included or arranged on an axis passing through the central sensor BC also belong to the scope of the present invention.

[0050] The second sensor group B2 may be disposed upward in a first direction D1 of the sensor substrate SS along a circumference of a first radius R1 from a central axis. In FIG. 5, the first circumference sensors of the second sensor group B2 may be shown in a grid pattern. In one embodiment, the first radius R1, which is the distance between each of the first circumference sensors of the second sensor group B2 and the central sensor BC, may be (e.g., approximately) the same as the radius of the wafer. For example, the circumference of the sensor substrate SS of the first circumference sensors of the second sensor group B2, and may be disposed above the sensor substrate SS in the first direction D1. In one embodiment, the magnitude of the central angle between each adjacent one of the first circumference sensors of the second sensor group B2 may be constant. For example, the magnitude of the central angle between the second a sensor B2a and the second b sensor B2b of the second sensor group B2 may be the first angle θ1.

[0051] The second sensor group B2 can sense and measure changes in the first, second, and third components due to a change in the rotation angle DC, or the distribution of the values of the first, second, and third components according to the value of the rotation angle DC. In one embodiment, via the second sensor group B2, the relationship (e.g., whether they are located on the same straight line or offset in the first direction D1) between the magnetic coil 1250 of FIG. 2 and the respective central positions of the sensor device 100 is grasped.

[0052] Referring to FIG. 5, the arrangement of the first circumference sensors of the second sensor group B2 shown and described is by way of example only, and the scope of the present invention is not limited thereto. Embodiments in which the magnitude of the central angle between each of the sensors of the second sensor group B2 is different according to the operation of the magnetic coil 1250 or the semiconductor manufacturing apparatus 1200 should also be understood to fall within the scope of the present invention. In one embodiment, some of the plurality of sensors on the sensor substrate SS may belong to the first sensor group B1 or the second sensor group B2. For example, referring to FIG. 5, the first a sensor B1a may be a sensor belonging to both the first sensor group B1 and the second sensor group B2.

[0053] Hereinafter, for convenience of explanation, sensors that can be included in both the first sensor group B1 and the second sensor group B2 will be described based on the sensors included in the first sensor group B1. However, the present invention should not be understood as being limited thereto. The number of sensors shown as the first sensor group B1 and the second sensor group B2 is for illustrative purposes only, and embodiments in which the number of sensors included in each group increases or decreases should also be understood to fall within the scope of the present invention.

[0054] The embodiment illustrated and described with reference to FIG. 5 is described based on the sensor unit 120 including a separate sensor substrate SS, but the scope of the present invention is not limited thereto. Embodiments in which the sensor unit 120 of FIG. 5 does not include the sensor substrate SS should also be understood to fall within the scope of the present invention. For example, Embodiments in which the central sensor BC, the first sensor group B1, and the second sensor group B2 are included or arranged on top of the sensor device substrate SUB (e.g., in the first direction D1) described in FIG. 4 should also be understood to fall within the scope of the present invention. In another example, embodiments in which the sensor substrate SS includes the power supply unit 110, the processing unit 130, and the communication unit 140 of FIG. 3 should also be understood to fall within the scope of the present invention.

[0055] Via the central sensor BC, the first sensor group B1, and the second sensor group B2, the measured sensed data SD is provided to the processing unit 130 of FIG. 3. The sensed data SD may include a first component, a second component, and a third component of the magnetic field measured by each sensor. The sensed data SD will be described in more detail with reference to FIG. 7.

[0056] FIG. 6 is a plan view showing in detail a sensor unit 200 according to an embodiment of the present invention. The sensor unit 200 can correspond to the sensor unit 120 of FIGS. 3 and 5. Referring to FIG. 6, the sensor unit 200 may include a sensor substrate SS, a central sensor BC, a first sensor group B1, a second sensor group B2, and a third sensor group B3. The central sensor BC, the first sensor group B1, and the second sensor group B2 may be shown in the same manner as in FIG. 5.

[0057] The sensor substrate SS can correspond to the sensor substrate SS in FIG. 5 and may include a central sensor BC, a first sensor group B1, a second sensor group B2, and a third sensor group B3 at the upper part in the first direction D1. The sensor substrate SS can be such that the central sensor BC, the first sensor group B1, the second sensor group B2, and the third sensor group B3 are connected to the processing unit 130 in FIG. 3. The structure and operation of the sensor substrate SS can be the same as or similar to the sensor substrate SS in FIG. 5.

[0058] The central sensor BC can correspond to the central sensor BC in FIG. 5, is located at the center of the sensor substrate SS, and can sense and measure the first component, the second component, and the third component of the magnetic field. The first sensor group B1 can correspond to the first sensor group B1 in FIG. 5. Referring to FIG. 6, the reference axis sensors of the first sensor group B1 can be parallel to the radial direction DR where the rotation angle DC is 0 (zero) degrees or 180 degrees and can be arranged along a straight line passing through the central sensor BC. The reference axis sensors of the first sensor group B1 are arranged at the first interval d1, similar to the first sensor group B1 in FIG. 5, and each of the reference axis sensors can measure the first component, the second component, and the third component of the magnetic field respectively. Embodiments in which the reference axis sensors of the first sensor group B1 are parallel to the radial direction DR at any rotation angle DC and are included or arranged on an axis passing through the central sensor BC should also be understood to fall within the scope of the present invention.

[0059] The second sensor group B2 can correspond to the second sensor group B2 in FIG. 5. Similar to the second sensor group B2 in FIG. 5, the first circumferential sensors of the second sensor group B2 are arranged above the sensor substrate SS in the first direction D1 along a circle with a first radius R1 from the central axis of the second sensor group B2. The magnitude of the central angle between each adjacent pair of the first circumferential sensors can be the first angle θ1. The first radius R1 can correspond to the first radius R1 in FIG. 5, and the first angle θ1 can correspond to the first angle θ1 in FIG. 5. In one embodiment, the first radius R1 can be (e.g., approximately) the same as the radius of the sensor substrate SS (or wafer). For example, referring to FIG. 6, the first circumferential sensors of the second sensor group B2 can be arranged along the circumference of the sensor substrate SS.

[0060] The second circumference sensors of the third sensor group B3 are arranged above the sensor substrate SS in the first direction D1 along a circle that is separated from the center of the sensor substrate SS by a second radius R2. In FIG. 6, the second circumference sensors of the third sensor group B3 may be shown with a gray shade. In one embodiment, the second radius R2 can be a value different from the first radius R1. For example, the second radius R2 can be a value smaller than the first radius R1. In one embodiment, the magnitude of the central angle between each sensor in the third sensor group B3 can be constant. For example, the magnitude of the central angle between the 3a sensor B3a and the 3b sensor B3b of the third sensor group B3 can be the second angle θ2. The second angle θ2 can be the same as the first angle θ1 or can have a different value.

[0061] Similar to the second sensor group B2, the third sensor group B3 can sense and measure the changes in the first, second, and third components due to the change in the rotation angle DC, or the distribution of the values of the first, second, and third components according to the value of the rotation angle DC. In one embodiment, through the third sensor group B3, the relationship (e.g., whether they are located on the same straight line in the first direction D1 or are offset) between the center positions of the magnetic coil 1250 and the sensor device 100 in FIG. 2 can be grasped. By additionally including the third sensor group B3, the sensor unit 200 in FIG. 6 can grasp the relationship between the center positions of the magnetic coil 1250 and the sensor device 100 more precisely than the sensor unit 120 in FIG. 5.

[0062] Referring to FIG. 6, the arrangement and number of sensors of the first sensor group B1, the second sensor group B2, and the third sensor group B3 illustrated and described are for example purposes only, and the scope of the present invention is not limited thereto. Embodiments in which the intervals between the sensors of the first sensor group B1 are not constant, or the central angles between the sensors of the second sensor group B2 or the third sensor group B3 are not constant, according to the operation of the magnetic coil 1250 or the semiconductor manufacturing apparatus 1200, should also be understood to fall within the scope of the present invention. Embodiments in which the sensor unit 200 additionally includes a plurality of sensor groups including sensors arranged on the circumference of a circle with an arbitrary radius from the central axis should also be understood to fall within the scope of the present invention.

[0063] In one embodiment, some of the sensors on the sensor substrate SS belong to the first sensor group B1 and the second sensor group B2, or belong to the first sensor group B1 and the third sensor group B3. For the sake of convenience of explanation, the sensors that can belong to the first sensor group B1 and the second sensor group B2, or the sensors that can belong to the first sensor group B1 and the third sensor group B3, are described with reference to those belonging to the first sensor group B1 as a reference. The number of sensors included in the first sensor group B1, the second sensor group B2, and the third sensor group B3 is for example only, and the present invention is not limited to those shown in FIG. 6. It should be understood that the number of sensors included in each group can be increased or decreased.

[0064] The embodiment illustrated and described with reference to FIG. 6 is described on the basis that the sensor unit 200 includes a separate sensor substrate SS, but the scope of the present invention is not limited thereto. Embodiments in which the sensor unit 200 of FIG. 6 does not include the sensor substrate SS should also be understood to fall within the scope of the present invention. For example, embodiments in which the central sensor BC, the first sensor group B1, the second sensor group B2, and the third sensor group B3 are included or arranged on the upper part of the sensor device substrate SUB (for example, in the first direction D1) described in FIG. 4 should also be understood to fall within the scope of the present invention.

[0065] The sensed data SD to be measured may be provided to the processing unit 130 of FIG. 3 via the central sensor BC, the first sensor group B1, the second sensor group B2, and the third sensor group B3. The sensed data SD may include the first component, the second component, and the third component of the magnetic field measured by each sensor. The sensed data SD is described in more detail with reference to FIG. 7.

[0066] The sensor device 100 illustrated and described with reference to FIGS. 3 to 6 can measure magnetic fields at multiple points within the chamber C in the semiconductor manufacturing apparatus 1200 of FIG. 2 based on the above-described structure and operation. The sensor device 100 can measure magnetic fields at multiple points within the chamber C while maintaining the vacuum environment of the chamber C and, based on the operations described later with reference to the following figures, enable the semiconductor manufacturing apparatus 1200 to apply processes with optimal efficiency and yield to the wafer.

[0067] FIG. 7 is a diagram showing a sensing data table (SDT: sensing data table) of the sensor device 100 of FIGS. 3 to 6 according to an embodiment of the present invention. The sensing data table SDT may be an example of the magnetic field data MD in FIG. 3 or may be included in the magnetic field data MD. The sensing data table SDT is generated by the processing unit 130 based on the sensing data SD of the sensor unit 120. With reference to FIGS. 3 and 5 to 7, the sensing data table SDT according to an embodiment of the present invention will be described.

[0068] The sensing data table SDT can refer to a plurality of rows and a plurality of columns. Each row of the sensing data table SDT can refer to a sensor group, individual sensors included in the sensor group, and measured values for each component of the magnetic field of the individual sensors. The first column of the sensing data table SDT can refer to the sensor groups BC, B1, B2, B3 of FIGS. 5 and 6. The second column can represent the individual sensors included in the sensor groups BC, B1, B2, B3. The third column can represent the measured value of the first component of the magnetic field of each sensor (Br: measured value of the component in the radial direction DR of the magnetic field), the fourth column can represent the measured value of the second component of the magnetic field of each sensor (Bθ: measured value of the component in the rotation angle BC of the magnetic field), and the fifth column can represent the third component (Bz: component in the first direction D1 of the magnetic field) measured from each sensor. x can refer to the number of reference axis sensors of the first sensor group B1, y can refer to the number of first circumferential sensors of the second sensor group B2, and z can refer to the number of second circumferential sensors of the third sensor group B3.

[0069] The horizontal direction in FIG. 7 can sequentially represent a sensor group, an individual sensor included in the sensor group, and the respective values of the first component measurement value Br, the second component measurement value Bθ, and the third component measurement value Bz of the individual sensor. For example, the first component measurement value Br of the central sensor BC may be RC, the second component measurement value Bθ may be θC, and the third component measurement value Bz may be ZC. As another example, the first component measurement value Br measured from the 22nd sensor B22, which is one of the first circumferential sensors of the second sensor group B2, may be R22, the second component measurement value Bθ may be θ22, and the third component measurement value Bz may be Z22. Similar to the above examples, the sensed data table SDT may include the first component measurement value Br, the second component measurement value Bθ, and the third component measurement value Bz of each sensor.

[0070] In one embodiment, the magnetic field data MD can be data in matrix form. For example, the magnetic field data MD can include the measurement values SDV in matrix form and be transmitted by the processing unit 130 to the communication unit 140. As a more detailed example, the first column of the measurement values SDV can include the first component measurement value Br, the second column can include the second component measurement value Bθ, and the third column can include the third component measurement value Bz.

[0071] Although the embodiment where the magnetic field data MD is the sensed data table SDT in FIG. 7 or includes the sensed data table SDT has been described, the scope of the present invention is not limited thereto. It should be understood that the magnetic field data MD can be in any form and can include the first component measurement value Br, the second component measurement value Bθ, and the third component measurement value Bz of each sensor in each sensor group BC, B1, B2, B3 in any form or any structure. In one embodiment, the magnetic field data MD can include data illustrated and described via FIG. 7 based on any data structure.

[0072] The embodiments of the magnetic field data MD or the sensed data table SDT described above have been described based on the sensing data SD of the sensor device 100 including the sensor unit 200 in FIG. 6, but the scope of the present invention is not limited thereto. Embodiments in which the magnetic field data MD or the sensed data table SDT includes the data of the sensor unit 120 in FIG. 5 should also be understood to fall within the scope of the present invention. That is, embodiments in which the magnetic field data MD or the sensed data table SDT includes the respective first component measurement values Br, second component measurement values Bθ, and third component measurement values Bz of the central sensor BC, the reference axis sensors of the first sensor group B1, and the first circumferential sensors of the second sensor group B2 should also be understood to fall within the scope of the present invention (this is the same in the case of the reference magnetic field data MD_R in FIG. 8 and the offset sensed data table SDT_O in FIG. 9, which will be described later).

[0073] FIG. 8 is a diagram showing reference magnetic field data (MD_R: reference magnetic flux data) according to an embodiment of the present invention. Referring to FIG. 8, the reference magnetic field data (MD_R: reference magnetic flux data) may include a plurality of reference sensed data tables SDT_R. With reference to FIG. 8, the reference magnetic field data MD_R according to an embodiment of the present invention will be described.

[0074] In one embodiment, the reference magnetic field data MD_R may include reference sensed data tables SDT_R according to characteristics such as the process of the semiconductor manufacturing apparatus 1200. For example, the reference magnetic field data MD_R may include a plurality of different reference sensed data tables SDT_R according to the process of the semiconductor manufacturing apparatus, the external environment, and the type of wafer. The reference magnetic field data MD_R may be stored in the system controller 1100 (for example, the memory 1110).

[0075] The reference sensing data table SDT_R is generated based on the characteristics of the semiconductor manufacturing system 1000 in FIG. 1. In one embodiment, the reference sensing data table SDT_R may include magnetic field data generated by each sensor of the sensor device 100 for the semiconductor manufacturing apparatus 1200 to manufacture semiconductor devices with optimal efficiency and yield. Each reference sensing data table SDT_R is generated based on methods such as simulation, experiment, or inference by machine learning.

[0076] The first to fifth columns of the reference sensing data table SDT_R can sequentially represent a sensor group, individual sensors included in the sensor group, a first component reference value Br_R, a second component reference value Bθ_R, and a third component reference value Bz_R measured by the individual sensors.

[0077] The first and second columns of the reference sensing data table SDT_R may be the same as the sensing data table SDT in FIG. 7. That is, the individual sensors pointed to by or corresponding to each row of the reference sensing data table SDT_R and the sensing data table SDT may be the same. For example, the second rows of the reference sensing data table SDT_R and the sensing data table SDT may respectively include the measured values Br, Bθ, Bz, and the reference values Br_R, Bθ_R, Bz_R of the central sensor BC, and the fourth row may respectively point to the measured values Br, Bθ, Bz, and the reference values Br_R, Bθ_R, Bz_R of the 12th sensor B12 in the first sensor group B1.

[0078] The reference sensing data table SDT_R can be a reference for magnetic field calibration and central position calibration. A more detailed utilization of the reference sensing data table SDT_R and the like will be described in more detail with reference to FIGS. 10 and 11.

[0079] Referring to FIG. 8, in the illustrated and described embodiments, the reference magnetic field data MD_R is illustrated and described as including a plurality of reference sensing data tables SDT_R, but the scope of the present invention is not limited thereto. The data illustrated and described by the reference sensing data table SDT_R may be included in the reference magnetic field data MD_R based on any array, concatenation relationship, or structure. For example, each reference data by characteristic such as a semiconductor process (e.g., sensor groups BC, B1, B2, B3, individual sensors, and reference values Br_R, Bθ_R, Bz_R of the individual sensors) may be included in the reference magnetic field data MD_R in any form or any structure (e.g., any data structure).

[0080] FIG. 9 is a chart showing an offset sensing data table SDT_O according to an embodiment of the present invention. The offset sensing data table SDT_O may be included in the offset magnetic flux data of the individual sensors of the sensor group or may be an example of the offset magnetic flux data. Referring to FIG. 9, an offset sensing data table SDT_O according to an embodiment of the present invention is described. FIG. 9 illustrates and describes the offset magnetic flux data based on a table format, but embodiments in which the offset magnetic flux data includes the data illustrated and described in FIG. 9 based on any form or any structure (e.g., data structure) should also be understood to fall within the scope of the present invention.

[0081] The offset sensing data table SDT_O is generated based on the sensing data table SDT in FIG. 7 and the reference sensing data table SDT_R in FIG. 8. In one embodiment, the offset sensing data table SDT_O can be generated based on the difference between the value of the sensing data table SDT and the value of the reference sensing data table SDT_R. For example, the first component offset value Br_O of the central sensor BC is RC_O, and (RC_O) = (RC) - (RC_R) can be satisfied. Similarly, as another example, the second component offset value Rθ_O of the 22nd sensor B22 of the second sensor group B2 is θ22_O, and (θ22_O) = (θ22) - (θ22_R) can be satisfied.

[0082] The offset sensing data table SDT_O may be generated by the system controller 1100. In one embodiment, the offset sensing data table SDT_O may be generated by the CPU 1120 and stored in the memory 1110. For example, the CPU 1120 can generate the offset sensing data table SDT_O based on the comparison between the sensing data table SDT (in the form of magnetic field data MD) included in the device data DATA received from the semiconductor manufacturing apparatus 1200 and the reference sensing data table SDT_R stored in the memory 1110. The generated offset sensing data table SDT_O may be stored in the memory 1110. A more detailed utilization of the offset sensing data table SDT_O will be described with reference to FIGS. 10 and 11.

[0083] FIGS. 7 to 9 show each sensor and the respective first component data, second component data, and third component data of the sensors in tabular form, but the scope of the present invention is not limited thereto. Embodiments in which the sensors and the respective data of the sensors as described with reference to FIGS. 7 to 9 are included in any data structure should also be understood to fall within the scope of the present invention.

[0084] FIG. 10 is a flowchart showing a method of operating a semiconductor manufacturing system 1000 for magnetic flux calibration of the semiconductor manufacturing apparatus 1200 of FIG. 2 according to an embodiment of the present invention. With reference to FIGS. 1 to 10, a magnetic field calibration method of the semiconductor manufacturing apparatus 1200 according to an embodiment of the present invention will be described. Throughout the operation of the semiconductor manufacturing apparatus 1200, the included chamber C can maintain an environment (e.g., a vacuum state) necessary for manufacturing semiconductor devices. Hereinafter, the present invention will be described on the basis that the sensor device 100 includes the sensor unit 200 of FIG. 6, but it should be understood that an embodiment including the sensor unit 120 of FIG. 5 also belongs to the scope of the present invention (in the tables of FIGS. 7 to 9, this applies when there is only the remaining data excluding the data corresponding to the third sensor group B3).

[0085] In step S110, the system controller 1100 can transmit a control signal CTRL for positioning the sensor device 100 on the electrostatic chuck 1220 to the semiconductor manufacturing apparatus 1200. For example, the system controller 1100 can generate a control signal CTRL via the CPU 1120 and transmit the generated control signal CTRL to the semiconductor manufacturing apparatus 1200 via the communication block 1130.

[0086] In step S115, the semiconductor manufacturing apparatus 1200 can receive the control signal CTRL. In one embodiment, the semiconductor manufacturing apparatus 1200 can transmit the received control signal CTRL to a configuration that performs the operation indicated by the control signal CTRL. For example, the semiconductor manufacturing apparatus 1200 can transmit a control signal CTRL indicating an operation of positioning the sensor device 100 on the electrostatic chuck 1220 to the transfer module 1230.

[0087] Step S120 may be a step in which the sensor device 100 measures the magnetic field in the chamber C of the semiconductor manufacturing apparatus 1200. Step S120 may include step S121, step S123, step S125, and step S127.

[0088] In step S121, the semiconductor manufacturing apparatus 1200 can position the sensor device 100 on the electrostatic chuck 1220. In one embodiment, the semiconductor manufacturing apparatus 1200 can move the sensor device 100 via the transfer module 1230. For example, referring also to FIG. 2, the semiconductor manufacturing apparatus 1200 can position the sensor device 100 above the electrostatic chuck 1220 in the first direction D1 based on the operation of the transfer module 1230.

[0089] In step S123, the semiconductor manufacturing apparatus 1200 can generate a magnetic field inside the chamber C. For example, the semiconductor manufacturing apparatus 1200 can activate the magnetic coil 1250 to generate a magnetic field inside the chamber C.

[0090] In step S125, the sensor device 100 can measure the magnetic field inside the chamber C. In one embodiment, the sensor device 100 can measure the magnetic field inside the chamber C based on the sensors included in the sensor unit 120 of FIG. 5. In another embodiment, the sensor device 100 includes the sensor unit 200 of FIG. 6 and can measure the magnetic field inside the chamber C based on the sensors included in the sensor unit 200. Each sensor of the sensor device 100 can measure the orthogonal component of the magnetic field passing through each sensor inside the chamber C. For example, each sensor can measure the magnetic field based on a cylindrical coordinate system and can measure the first component (component in the radial direction DR), the second component (rotation angle DC component), and the third component (component in the first direction D1) of the magnetic field. The sensor units 120 and 200 can generate sensing data SD based on the sensing results of the sensors.

[0091] In step S127, the sensor device 100 can generate magnetic field data MD. In one embodiment, the sensor device 100 can generate magnetic field data MD based on the sensed data SD generated from the sensor unit 120, and the magnetic field data MD may include the sensed data SD of each sensor. For example, the sensor device 100 can generate magnetic field data MD including the sensed data table SDT of FIG. 7 based on the sensing data SD via the processing unit 130. As another example, the sensor device 100 can generate magnetic field data MD including the measured value SDV of the sensed data table SDT of FIG. 7.

[0092] In step S130, the sensor device 100 can transmit the magnetic field data MD to the system controller 1100. In one embodiment, the magnetic field data MD may be included in the device data DATA. For example, the device data DATA can include the magnetic field data MD of the sensor device 100, and the sensor device 100 can transmit the device data DATA including the magnetic field data MD to the communication block 1130.

[0093] In step S140, the system controller 1100 can generate offset magnetic field data. In one embodiment, the system controller 1100 can generate offset magnetic field data based on the reference magnetic field data MD_R and the magnetic field data MD of FIG. 8. For example, the system controller 1100 can generate offset magnetic field data based on the reference sensed data table SDT_R of the reference magnetic field data MD_R and the magnetic field data MD, or the sensed data table SDT included in the magnetic field data MD. In one embodiment, the offset magnetic field data can be, or can be, the offset sensed data table SDT_O of FIG. 9.

[0094] The system controller 1100 can generate offset magnetic field data based on the difference between the corresponding data (e.g., component-by-component measurement values or component-by-component reference values) included in the magnetic field data MD and the reference magnetic field data MD_R. In one embodiment, the system controller 1100 can generate an offset sensed data table SDT_O based on the difference between the corresponding values of the sensed data table SDT and the reference sensed data table SDT_R. For example, referring to FIGS. 7 to 9 together, R2y_O, which is the first component offset value Br_O of the second y sensor B2y in the offset sensed data table SDT_O, can be a value obtained by subtracting R2y_R, which is the first component reference value Br_R of the second y sensor B2y in the reference sensed data table SDT_R, from R2y, which is the first component measurement value Br of the second y sensor B2y in the sensed data table SDT. As another example, Z12_O, which is the third component offset value Bz_O of the twelfth sensor B12 in the offset sensed data table SDT_O, can be a value obtained by subtracting Z12_R, which is the third component reference value Bz_R of the twelfth sensor B12 in the reference sensed data table SDT_R, from Z12, which is the third component measurement value Bz of the twelfth sensor B12 in the sensed data table SDT.

[0095] In step S150, the system controller 1100 can determine whether the magnitude of the offset magnetic flux is zero. In one embodiment, the system controller 1100 can determine that the magnitude of the offset magnetic field is zero when the values of all components in the offset sensed data table SDT_O are zero. When the magnitude of the offset magnetic field is zero, the system controller 1100 can end the magnetic field calibration of the semiconductor manufacturing apparatus 1200. When the magnitude of the offset magnetic field is not zero, the system controller 1100 can proceed to step S160.

[0096] In step S160, the system controller 1100 can generate magnetic flux calibration data. In one embodiment, the system controller 1100 can generate magnetic flux calibration data based on the offset sensing data table SDT_O and a magnetic flux calibration algorithm. For example, the system controller 1100 can generate magnetic flux calibration data by applying the offset sensing data table SDT_O to the magnetic flux calibration algorithm stored in the memory 1110. The magnetic flux calibration data can be data for controlling the magnetic coil 1250. For example, the magnetic flux calibration data can be data including respective values of a plurality of currents required for generating the magnetic field of the magnetic coil 1250, or a pattern of respective values of the plurality of currents, and the like.

[0097] In step S170, the system controller 1100 can send the magnetic flux calibration data and the control signal CTRL for calibration to the semiconductor manufacturing apparatus 1200. For example, the system controller 1100 can send the magnetic flux calibration data and the control signal CTRL for calibration to the semiconductor manufacturing apparatus 1200 via the communication block 1130.

[0098] In step S180, the semiconductor manufacturing apparatus 1200 can perform magnetic flux calibration in response to the control signal CTRL for calibration and the magnetic flux calibration data. For example, the semiconductor manufacturing apparatus 1200 can adjust each of a plurality of currents flowing inside the magnetic coil 1250 according to the magnetic flux calibration data, and the magnetic field generated by the magnetic coil 1250 can change to conform to the magnetic flux calibration data. When the magnetic flux calibration is successful, the value of each sensor-specific component of the magnetic field data MD measured by the sensor device 100 can be the same as the value corresponding to the reference sensing data table SDT_R.

[0099] After step S180, the semiconductor manufacturing system 1000 returns to step S120 again and can measure the magnetic field in chamber C. For example, when the sensor device 100 is located on the electrostatic chuck 1220, the semiconductor manufacturing apparatus 1200 can return to step S123 after the completion of step S180 and can proceed sequentially as described above from step S123. In another example, when the semiconductor manufacturing apparatus 1200 continues to generate a magnetic field, the semiconductor manufacturing system 1000 can return to step S125, and the sensor device 100 can sense the magnetic field generated based on the magnetic field calibration data. Thereafter, the semiconductor manufacturing system 1000 can sequentially perform the operations described above.

[0100] Based on the operation method illustrated and described with reference to FIG. 10, the semiconductor manufacturing system 1000 can generate a magnetic field for an optimal process. The sensor device 100 in FIG. 3 can be measured without deviating from the vacuum state of chamber C. This can reduce the cost consumed in the process of the semiconductor system 1000 or can shorten the time consumed for the measurement and calibration of the magnetic field. Note that the sensor device 100 can provide a precise measurement of the magnetic field at each position point in chamber C based on the magnetic field measurements at a plurality of position points. The semiconductor manufacturing system 1100 can more finely control the magnetic field in chamber C based on such measurement data and can reach the set value of the magnetic field for an optimal process (for example, the magnitude of the current flowing inside the coil current 1250) more quickly and easily.

[0101] FIG. 11 is a flowchart showing an operation method of a semiconductor manufacturing system for wafer center calibration of a semiconductor manufacturing apparatus 1200 according to an embodiment of the present invention. With reference to FIGS. 1 to 7 and FIG. 11, an operation method of a semiconductor manufacturing system for wafer center position calibration using a magnetic field of a semiconductor manufacturing apparatus 1200 according to an embodiment of the present invention will be described. In one embodiment, the sensor device 100 can perform wafer center position calibration based on adjusting the operation of the transfer module 1230 based on whether the sensor device 100 is centered, as long as the sensor device 100 has the same size, notch, etc. as the wafer.

[0102] In step S210, the system controller 1100 can transmit a control signal CTRL to the semiconductor manufacturing apparatus 1200 to position the sensor device 100 on the electrostatic chuck 1220. Step S210 can correspond to step S110 in FIG. 10, and the semiconductor manufacturing system 1000 can operate in the same or similar manner as step S110.

[0103] In step S215, the semiconductor manufacturing apparatus 1200 can receive the control signal CTRL. In step S215, the semiconductor manufacturing apparatus 1200 can operate in the same or similar manner as step S115 in FIG. 10. For example, the semiconductor manufacturing apparatus 1200 can transmit the control signal CTRL to a component (e.g., the transfer module 1230) configured to perform the operation indicated by the control signal CTRL.

[0104] Step S220 may be a step in which the sensor device 100 measures the magnetic field in the chamber C of the semiconductor manufacturing apparatus 1200. Step S220 can correspond to step S110 in FIG. 10. Step S220 can include step S221, step S223, step S225, and step S227, and each step can correspond to step S121, step S123, step S125, and step S127, respectively. The operations of each of step S221, step S223, step S225, and step S227 of the semiconductor system 1000 can operate the same as or similar to the operations of the corresponding step S121, step S123, step S125, and step S127.

[0105] In step S221, the semiconductor manufacturing apparatus 1200 can place the sensor device 100 on the electrostatic chuck 1220. In step S223, the semiconductor manufacturing apparatus 1200 can generate a magnetic field in the chamber C. In step S225, the sensor device 100 can measure the magnetic field in the chamber C, and in step S227, the sensor device 100 can generate magnetic field data MD based on the measurement.

[0106] In step S230, the sensor device 100 can transmit the generated magnetic field data MD to the system controller 1100. Step S230 can correspond to step S130 in FIG. 10. For example, the sensor device 100 can transmit device data DATA including the magnetic field data MD to the system controller 1100.

[0107] In step S240, the system controller 1100 can determine whether the sensor device 100 is present at the center position of the electrostatic chuck. The system controller 1100 can determine whether the sensor device 100 is disposed at the center position based on the sensing data table SDT of FIG. 7 included in the magnetic field data MD.

[0108] In one embodiment, the system controller 1100 can determine whether the sensor device 100 is located at the center position based on the measurement value of the central sensor BC. For example, referring to FIG. 8 together, when the BC which is the first component measurement value Br of the central sensor BC in the sensed data table SDT included in the magnetic field data MD, or the θC which is the second component measurement value Bθ is not zero, the system controller 1100 can determine that the sensor device 100 is not arranged at the center position. This is because when a magnetic field is generated on the opposite side of the first direction D1 above the center position of the sensor device 100, all the first components (magnetic field components in the radial direction DR) are symmetric and cancel each other out.

[0109] In another embodiment, the system controller 1100 can determine whether the sensor device 100 is at the center position based on the measurement value of any component of each sensor. For example, when at least one or more of the second component measurement values Bθ of each sensor included in the sensor device 100 is not zero, the system controller 1100 can determine that the sensor device 100 is not located at the center position. This is because when a magnetic field is generated above the sensor device 100 in the first direction D1 from the center position of the sensor device 100 and radiated in the reverse direction of the first direction D1 and the radial direction DR, the second component (i.e., the rotational angle DC component of the magnetic field) has a measured value of zero at each sensor.

[0110] The above two embodiments are examples, and the scope of the present invention is not limited thereto. Depending on the position of the magnetic coil 1250, the coordinate components of the orthogonal component coordinate system (e.g., Cartesian coordinate system or spherical coordinate system) for measuring the magnetic field, or the number of sensors serving as the reference for determining the center position, etc., the reference component among the measurement values of the magnetic field components and the reference of the measurement values of the components may be different. In another embodiment, the reference magnetic field data MD_R can include the reference magnetic field data MD_R including the reference values for each component of each sensor when the sensor device 100 is located at the center position, and based on the comparison with the magnetic field data MD, it can be determined whether the sensor device 100 is located at the center position.

[0111] In step S250, the system controller 1100 can determine the presence or absence of the next step progression based on the determination result of step S240. When the system controller 1100 determines in step S240 that the sensor device 100 is located at the center position, the system controller 1100 can terminate the calibration operation of the wafer center position of the semiconductor manufacturing system 1000. When the system controller 1100 determines in step S240 that the sensor device 100 is not located at the center position, the semiconductor manufacturing system 1000 can proceed to step S260.

[0112] In step S260, the system controller 1100 can generate center position calibration data based on the sensed data table SDT. The center position calibration data can be data for adjusting the operation of the transfer module 1230. In one embodiment, the system controller 1100 can generate center position calibration data based on the data in the sensed data table SDT and the center position calibration algorithm.

[0113] For example, when the system controller 1100 determines the center position based on the measured magnetic field component of the central sensor BC in the sensed data table SDT, the system controller 1100 can generate center position calibration data based on the first component measurement value Br or the second component measurement value Bθ and the algorithm. As another example, when the system controller 1100 determines the center position based on the second component measurement value Bθ of each sensor in the sensed data table SDT, the system controller 1100 can generate center position calibration data based on the second component measurement value Bθ of each sensor and the algorithm. Similarly, when the system controller 1100 determines the center position by a method other than the methods described as examples above, the system controller 1100 can generate a center position calibration algorithm based on the algorithm corresponding to that method and the measurement values.

[0114] In step S270, the system controller 1100 can send the center position calibration data and the control signal CTRL indicating the center position calibration to the semiconductor manufacturing apparatus 1200. Similar to step S170 in FIG. 10, the system controller 1100 can send the center position calibration data and the control signal CTRL for center position calibration to the semiconductor manufacturing apparatus 1200 via the communication block 1130.

[0115] In step S280, the semiconductor manufacturing apparatus 1200 can perform center position calibration in response to the center position calibration data and the control signal CTRL for center position calibration. For example, the semiconductor manufacturing apparatus 1200 can control or adjust the operation of the transfer module 1230 according to the center position calibration data, and based on this, the center position of the sensor device 100 (or the wafer) can be calibrated. For example, when the center position calibration is successfully performed, the first component measurement value Br and the second component measurement value Bθ of the center sensor BC measured by the sensor device 100 are zero, or the second component measurement values Bθ of all the sensors can be zero.

[0116] After step S280, the semiconductor manufacturing system 1000 can return to step S220 again to measure the magnetic field in the chamber C. In one embodiment, after performing step S280, the semiconductor manufacturing apparatus 1200 can return to step S220 for magnetic field measurement. For example, when the sensor device 100 is located on the electrostatic chuck 1220, the semiconductor manufacturing apparatus 1200 can return to step S223 after the end of step S280 and can proceed sequentially as described above from step S223. As another example, when the semiconductor manufacturing apparatus 1200 continues to generate a magnetic field, the semiconductor manufacturing system 1000 can return to step S225, and the sensor device 100 can sense the magnetic field generated based on the magnetic field calibration data. Thereafter, the semiconductor manufacturing system 1000 can sequentially perform the above-described operations.

[0117] Based on the calibration operation of the wafer center position illustrated and described via FIG. 11, the transfer module 1230 can measure so that the wafer can be easily placed at the center position of the electrostatic chuck 1220. In particular, the sensor device 100 described with reference to FIGS. 1-9 and the operation of FIG. 11 can control the transfer module 1230 so that the transfer module 1230 operates such that the wafer is placed at the center of the electrostatic chuck 1220 without changes in the environment for manufacturing semiconductor devices, such as the vacuum environment in the chamber C of the semiconductor manufacturing apparatus 1200. This can provide cost reduction for generating the vacuum environment due to environmental changes in the chamber C and rapid adjustment of the transfer module 1230.

[0118] FIG. 12 is a block diagram showing a semiconductor manufacturing apparatus according to an embodiment of the present invention. Referring to FIG. 12, the semiconductor manufacturing apparatus 2000 may include an equipment controller 2100, a manufacturing device 2200, and a sensor device 2300. Referring to FIG. 12, a semiconductor manufacturing apparatus 2000 according to an embodiment of the present invention will be described.

[0119] The equipment controller 2100 can control the overall operation of the semiconductor manufacturing apparatus 2000. In one embodiment, the equipment controller 2100 can control the manufacturing device 2200 based on the control signal CTRL and can receive the provision of the magnetic field data MD from the sensor device 2300. The equipment controller 2100 can operate the same as or similar to the system controller 1100 described with reference to FIGS. 1-11, and can control the manufacturing device 2200 or receive data from the sensor device 2300.

[0120] The manufacturing apparatus 2200 can manufacture semiconductor devices. In one embodiment, the manufacturing apparatus 2200 can manufacture semiconductor devices in response to the control signal CTRL of the apparatus controller 2100. The manufacturing apparatus 2200 can operate in the same or similar manner as the semiconductor manufacturing apparatus 1200 described with reference to FIGS. 1 to 11.

[0121] The sensor device 2300 can measure the magnetic field in the chamber included in the manufacturing apparatus 2200. In one embodiment, the sensor device 2300 can transmit the measured magnetic field data MD to the apparatus controller 2100. The sensor device 2300 can correspond to the sensor device 100 described with reference to FIGS. 1 to 11 and can operate in the same or similar manner as the sensor device 100.

[0122] The semiconductor manufacturing apparatus 2000 of FIG. 12 can measure the magnetic field inside the chamber without changing the vacuum environment of the chamber included in the manufacturing apparatus 2200 based on the sensor device 2300, and the chamber can go back and forth between the atmosphere environment and the vacuum environment), thereby reducing costs and the like. Note that the sensor device 2300 can be easily handled in the manufacturing apparatus 2200 in the same manner as a wafer, so that the magnetic field in the chamber can be measured. The semiconductor manufacturing apparatus 2000 can more easily calibrate the magnetic field in the chamber or can easily perform the center position calibration of the wafer based on the magnetic field data generated by the sensor device 2300.

[0123] The above content is a specific embodiment for implementing the present invention. The present invention should also include not only the above-described embodiments, but also embodiments that can be simply designed or easily modified. Note that the present invention also includes technologies that can be easily deformed and implemented using embodiments. Therefore, the scope of the present invention should not be defined by being limited to the above-described embodiments, but should be defined by not only the claims described below, but also those equivalent to the claims of the present invention.

Description of Reference Numerals

[0124] 100: Sensor device 200: Sensor unit 1000: Semiconductor manufacturing system 2000: Semiconductor manufacturing apparatus MD: Magnetic field data SDT: Sensing data table MD_R: Reference magnetic field data

Claims

1. 1. A magnetic field sensor device configured to measure a magnetic field, comprising: a sensor unit configured to sense the magnetic field and generate sensor data; a processing unit configured to generate magnetic field data based on the sensed data; The sensor unit includes: A sensor substrate; a central sensor configured to be located at a center of the sensor substrate; a plurality of reference axis sensors arranged on the sensor substrate along a straight line passing through the center of the sensor substrate; a plurality of first circumferential sensors arranged on the sensor substrate along a circumference having a first radius from the center; each of the central sensor, the plurality of reference axis sensors, and the plurality of first circumferential sensors is configured to measure a magnetic field passing through the central sensor, the reference axis sensor, and the first circumferential sensor; Magnetic field sensor device.

2. the plurality of reference axis sensors are disposed at a first interval such that a magnetic field change amount between adjacent reference axis sensors is greater than a magnetic field measurement sensitivity of the reference axis sensors; The magnetic field sensor device according to claim 1 .

3. the central sensor is configured to measure a first component, a second component, and a third component of a magnetic field passing through the central sensor; the plurality of reference axis sensors are configured to measure first, second, and third components of the magnetic field passing through the plurality of reference axis sensors; the first plurality of circumferential sensors are configured to measure a first component, a second component, and a third component of the magnetic field passing through the first plurality of circumferential sensors; the first component, the second component, and the third component of the center sensor, the plurality of reference axis sensors, and the plurality of first circumference sensors are mutually orthogonal; The magnetic field sensor device according to claim 1 .

4. The sensor unit further includes a plurality of second circumferential sensors; the second plurality of circumferential sensors are positioned on the sensor substrate and arranged along a circumference at a second radius from the center; A magnetic field sensor device according to claim 3.

5. the processing unit is configured to generate magnetic field data; The magnetic field data is measurements of the first component sensed by each of the central sensor, the plurality of reference axis sensors, and the plurality of first circumferential sensors, and measurements of the first component sensed by the plurality of second circumferential sensors; measurements of the second component sensed by each of the central sensor, the plurality of reference axis sensors, and the plurality of first circumferential sensors, and measurements of the second component sensed by each of the plurality of second circumferential sensors; measurements of the third component sensed by each of the central sensor, the plurality of reference axis sensors, and the plurality of first circumferential sensors, and measurements of the third component sensed by the plurality of second circumferential sensors. A magnetic field sensor device according to claim 4.

6. each of the central sensor, the plurality of reference axis sensors, the plurality of first circumferential sensors, and the plurality of second circumferential sensors is configured to measure the first component, the second component, and the third component based on a cylindrical coordinate system; the first component is a radial component on the sensor substrate, the radial component being a component in a direction away from a center of the sensor substrate and perpendicular to a circumference of the sensor substrate; the second component is a rotation angle component using a straight line connecting the reference axis sensors on the sensor substrate as a reference axis, The third component is a component in the central axis direction of the sensor substrate. A magnetic field sensor device according to claim 5.

7. A semiconductor manufacturing apparatus comprising: A sensor device including a plurality of sensors; an electrostatic chuck configured to be positioned over the sensor device; a chamber configured to contain the sensor device and the electrostatic chuck; the plurality of sensors measure a plurality of first components of a magnetic field, a plurality of second components of the magnetic field, and a plurality of third components of the magnetic field; the magnetic field passes through the plurality of sensors; the sensor device measures a first component, a second component, and a third component of the magnetic field, obtains magnetic field data including a first component measurement value, a second component measurement value, and a third component measurement value, and compares the magnetic field data with reference magnetic field data including a first component reference value, a second component reference value, and a third component reference value for each of the plurality of sensors to generate offset magnetic field data; The plurality of sensors include a central sensor disposed on a sensor substrate at a center of the sensor substrate; a plurality of reference axis sensors arranged on the sensor substrate along a straight line passing through the center of the sensor substrate; a first circumferential sensor disposed on a circumference of a first radius from a center of the sensor substrate, on the sensor substrate; calibrating the magnetic field based on the offset magnetic field data; Semiconductor manufacturing equipment.

8. The plurality of sensors include further comprising a second plurality of circumferential sensors disposed on the sensor substrate in a circumference having a second radius from a center of the sensor; The second radius is smaller than the first radius.

8. The semiconductor manufacturing apparatus according to claim 7.

9. the offset magnetic field data includes a plurality of first differences between the first component measurement values ​​and a plurality of first component reference values ​​for each of the plurality of sensors, a plurality of second differences between the second component measurement values ​​and a plurality of second component reference values, and a plurality of third differences between the third component measurement values ​​and a plurality of third component reference values.

9. The semiconductor manufacturing apparatus according to claim 8.

10. A semiconductor manufacturing apparatus comprising: A sensor device including a plurality of sensors; an electrostatic chuck configured to position the sensor device thereon; a transfer module configured to position a wafer on the electrostatic chuck; a chamber configured to contain the sensor device and the electrostatic chuck; the plurality of sensors measure a plurality of first components of a magnetic field, a plurality of second components of the magnetic field, and a plurality of third components of the magnetic field; the magnetic field passes through the plurality of sensors; the sensor device acquires magnetic field data, and based on the magnetic field data, determines whether the sensor device positioned by the transfer module is positioned at a center of the electrostatic chuck, and if the sensor device is not positioned at the center of the electrostatic chuck, generates center calibration data based on the magnetic field data; The plurality of sensors include a central sensor disposed on a sensor substrate at a center of the sensor substrate; a plurality of reference axis sensors arranged on the sensor substrate along a straight line passing through the center of the sensor substrate; a first circumferential sensor disposed on the sensor substrate on a circumference of a first radius from a center of the sensor substrate; calibrating the transfer module to position the wafer at the center of the electrostatic chuck based on the center calibration data; Semiconductor manufacturing equipment.

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