Aminoalkoxydisilazane compound, silicon-containing thin film deposition composition containing the same, and method for producing silicon-containing thin film using the same

Abstract

To provide an aminoalkoxydisilazane compound, a silicon-containing thin film deposition composition containing the same, and a method for producing a silicon-containing thin film using the same.SOLUTION: An aminoalkoxydisilazane compound represented by the chemical formula 1 in the figure is provided: R1, R11 and R12 each independently represent a C1-C7 alkyl group or the like, or R11 and R12 may be linked together to form a ring; R2 and R3 each independently represent a C1-C7 alkyl group or the like; R represents a C1-C7 alkyl group or a C3-C7 cycloalkyl group; and R4 and R5 each independently represent a C1-C7 alkyl group or the like. The aminoalkoxydisilazane compound of the present invention is thermally stable; and by using a highly volatile and reactive compound as a silicon-containing precursor, it is possible to form a silicon-containing thin film with excellent physical and electrical properties and high purity.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to an aminoalkoxydisilazane compound, a composition for depositing a silicon-containing thin film containing the same, and a method for producing a silicon-containing thin film using the same.

Background Art

[0002] Silicon-containing thin films are essential materials in semiconductor manufacturing and are utilized in various forms such as silicon films, silicon oxide films, silicon nitride films, silicon carbonitride films, and silicon oxynitride films. Such thin films play an essential role in advanced electronic devices such as memory and logic chips, flat panel displays (TFTs), and solar cells, and are used for semiconductor substrates, diffusion masks, anti-oxidation films, and dielectric films. In recent years, polycrystalline silicon thin films have been applied to various fields such as solar cells, and their utilization has been increasing.

[0003] For the deposition of silicon-containing thin films, various silicon precursors such as conventional silicon precursors such as silane, disilane, and halogenated silane, and aminosilane and alkoxysilane have been developed. Typical processes include chemical vapor deposition (CVD) and atomic layer deposition (ALD). In particular, ALD is essential for realizing the fine patterns of the latest semiconductor devices because it is very effective in forming ultra-fine thin films with a uniform thickness. Also, deposition techniques using plasma (PECVD, PEALD) are regarded as important technologies in the manufacture of next-generation semiconductors and display devices because thin films can be deposited at low temperatures.

[0004] Recent ultra-fine semiconductor devices have been rapidly progressing in miniaturization and high integration, and the requirements for silicon precursors have become even more stringent. The precursor should have stability at room temperature and high volatility, have excellent thermal stability and reactivity at high temperatures without generating non-volatile by-products during the thin film deposition process, and be easy to handle, transport, and store. A precursor having such characteristics is essential for depositing high-quality thin films.

[0005] Due to the development of ultra-high-integration semiconductor devices, conventional precursors have limitations in forming a uniform thin film at low temperatures, resulting in a decrease in productivity and problems with physical and electrical properties. Therefore, there is a need to develop a new silicon precursor that enables fast and uniform deposition at low temperatures and has excellent physical properties.

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0007] One aspect of the present invention provides an aminoalkoxydisilazane compound that can be used as a precursor for a silicon thin film and a composition for depositing a silicon-containing thin film containing the same.

[0008] Another aspect of the present invention provides a method for producing a silicon-containing thin film using the aminoalkoxydisilazane compound or the composition for depositing a silicon-containing thin film containing the same.

Means for Solving the Problems

[0009] One aspect of the present invention provides an aminoalkoxydisilazane compound represented by the following Chemical Formula 1.

[0010]

Chem.

[0011] In the above Chemical Formula 1, R 1 、R 11 、and R 12 are each independently C1-C7 alkyl, C3-C7 cycloalkyl, or C2-C7 alkenyl, or the above R11 and R 12 may be connected to each other to form a ring, R 2 and R 3 are each independently C1-C7 alkyl, C3-C7 cycloalkyl, or C1-C7 alkoxy, R is C1-C7 alkyl or C3-C7 cycloalkyl, R 4 and R 5 are each independently C1-C7 alkyl, C3-C7 cycloalkyl, C1-C7 alkoxy, or C3-C7 cycloalkyloxy.

[0012] Another aspect of the present invention provides a composition for depositing a silicon-containing thin film, which contains the aminoalkoxydisilazane compound according to the above aspect.

[0013] Still another aspect of the present invention provides a method for producing a silicon-containing thin film using the aminoalkoxydisilazane compound according to the above aspect, or a composition for depositing a silicon-containing thin film containing the same.

Advantages of the Invention

[0014] The aminoalkoxydisilazane compound according to the present invention is excellent in volatility and thermal stability, exists in a liquid state at normal temperature and pressure, is easy to store and handle, and has high reactivity. Therefore, by using it as a precursor for depositing a silicon-containing thin film, a high-purity and high-quality silicon-containing thin film can be formed.

[0015] By using the aminoalkoxydisilazane compound according to the present invention as a precursor for thin film deposition, a high-quality silicon-containing thin film with a high silicon content, excellent thermal stability and durability can be produced.

[0016] In addition, the silicon-containing thin film produced from the aminoalkoxydisilazane compound according to the present invention is excellent not only in both chemical and thermal stability, but also in both durability and electrical properties.

Brief Description of the Drawings

[0017]

Figure 1

Modes for Carrying Out the Invention

[0018] Unless otherwise defined herein, all technical and scientific terms have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terms used in the description herein are for the purpose of effectively describing specific examples only and are not intended to limit the invention.

[0019] The singular forms used in the present invention are intended to include the plural forms as well, unless the context specifically indicates otherwise.

[0020] Throughout this specification, when a component is described as "comprising", "including", "containing", or "having", it means that it can further include other components, rather than excluding other components, unless otherwise stated to the contrary, and does not exclude additional elements, materials, or steps not listed.

[0021] The numerical ranges used in this specification include the lower and upper limits, all values within that range, increments logically derived in terms of the form and width of the defined range, all doubly limited values, and all possible combinations of the upper and lower limits of numerically defined ranges limited in different forms. As an example, when the content of a composition is limited to 10% - 80% or 20% - 50%, it should be interpreted that numerical ranges of 10% - 50% or 50% - 80% are also described in this specification. Unless otherwise defined herein, values outside the numerical ranges that may occur due to experimental error or rounding of values are also included in the defined numerical ranges.

[0022] Unless otherwise defined herein, "about" can include values within 30%, 25%, 20%, 15%, 10%, or 5% of the stated value.

[0023] Unless otherwise specified herein, the units used are based on weight. By way of example, the unit of %, or ratio, means weight %, or weight ratio, and weight % means the weight % occupied by any one component of the total composition in the composition, unless otherwise defined.

[0024] The term "C A -C B " means "having A or more and B or less carbon atoms", and the term "A~B" means "having A or more and B or less".

[0025] The term "alkyl" as used herein means a monovalent organic radical derived from a straight-chain or branched saturated hydrocarbon, having 1 to 7, 1 to 5, 1 to 4, or 1 to 3 carbon atoms, and may include, for example, methyl, ethyl, propyl, isopropyl, butyl, t-butyl, isobutyl, pentyl, etc.

[0026] The term "cycloalkyl" as used herein means a monovalent saturated carbocyclic radical composed of one or more rings. Examples of cycloalkyl radicals include, but are not limited to, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, etc.

[0027] The term "alkenyl" as used herein means a straight-chain or branched hydrocarbon radical containing 2 to 7 carbon atoms and one or more carbon-carbon double bonds. Specifically, the alkenyl is a lower alkenyl radical having 2 to 7, 2 to 5, 2 to 4, or 2 to 3 carbon atoms. Examples of alkenyl radicals may include vinyl, propenyl, isopropenyl, allyl, butenyl, 4-methylbutenyl, etc. The alkenyl may include radicals having cis and trans orientations, or alternatively, E and Z orientations.

[0028] In this specification, "normal temperature" means the temperature in a state where the temperature is not artificially adjusted. For example, the normal temperature may be 20°C to 40°C, or 20°C to 30°C, or 23 to 26°C.

[0029] Hereinafter, the present disclosure will be described in detail. However, this is merely exemplary and the present disclosure is not limited to the specific embodiments exemplified.

[0030] One aspect of the present invention provides an aminoalkoxydisilazane compound as a precursor for producing a high-quality silicon-containing thin film. Specifically, the aminoalkoxydisilazane compound according to one aspect is represented by the following Chemical Formula 1.

[0031]

Chemical formula

[0032] In Chemical Formula 1, R 1 、R 11 、and R 12 are each independently C1-C7 alkyl, C3-C7 cycloalkyl, or C2-C7 alkenyl, or R 11 and R 12 may be linked to each other to form a ring, R 2 and R 3 are each independently C1-C7 alkyl, C3-C7 cycloalkyl, or C1-C7 alkoxy, R is C1-C7 alkyl or C3-C7 cycloalkyl, R 4 and R 5 are each independently C1-C7 alkyl, C3-C7 cycloalkyl, C1-C7 alkoxy, or C3-C7 cycloalkyloxy.

[0033] The aminoalkoxydisilazane compound according to one aspect has a disilazane skeleton of Si-N-Si, and has a structure in which an amino substituent is introduced into one Si and at least one alkoxy substituent is introduced into the other Si. The aminoalkoxydisilazane compound according to one aspect has a lower activation energy and excellent thermal stability due to the above-described structural feature, that is, the silicon moieties present on both sides centered on N in the middle of the disilazane skeleton are asymmetric, resulting in significantly improved reactivity and no formation of non-volatile by-products, so that a high-quality silicon-containing thin film can be easily formed at a high deposition rate. The aminoalkoxydisilazane compound according to one aspect is in a liquid state at normal temperature and under handleable pressures, and thus is easy to handle.

[0034] In one embodiment, in Chemical Formula 1, the R 1 , R 11 , and R 12 are each independently C1-C5 alkyl, C3-C7 cycloalkyl, or C2-C4 alkenyl, or the R 11 and R 12 may be linked to each other by C2-C7 alkylene to form a ring, the R 2 and R 3 are each independently C1-C5 alkyl or C3-C7 cycloalkyl, R is C1-C5 alkyl or C3-C7 cycloalkyl, and the R 4 and R 5 may each independently be C1-C5 alkyl, C3-C7 cycloalkyl, or C1-C5 alkoxy.

[0035] In one embodiment, in Chemical Formula 1, the R 1 , R 11 , and R 12 are each independently C1-C4 alkyl, C3-C6 cycloalkyl, or C2-C3 alkenyl, the R 2 , R 3 , and R are each independently C1-C4 alkyl or C3-C6 cycloalkyl, and the R 4is C1-C4 alkoxy or C3-C6 cycloalkyloxy, and R 5 may be C1-C4 alkyl, C3-C6 cycloalkyl, or C1-C4 alkoxy.

[0036] In one embodiment, in Formula 1, R 1 is C1-C4 alkyl, C3-C6 cycloalkyl, or C2-C3 alkenyl, R 11 and R 12 may be linked to each other by C2-C6 alkylene to form a ring, and R 2 , R 3 , and R are each independently C1-C4 alkyl or C3-C6 cycloalkyl, and R 4 and R 5 may each independently be C1-C4 alkyl, C3-C6 cycloalkyl, or C1-C4 alkoxy.

[0037] In one embodiment, in Formula 1, R 1 , R 11 , and R 12 are each independently C1-C4 alkyl or C2-C3 alkenyl, R 2 , R 3 , and R are each independently C1-C4 alkyl, and R 4 and R 5 may each independently be C1-C4 alkyl or C1-C4 alkoxy.

[0038] In one embodiment, in Formula 1, R 1 , R 2 , R 3 , R, R 11 , and R 12 are each independently C1-C4 alkyl, and R 4 and R 5 may each independently be C1-C4 alkyl or C1-C4 alkoxy.

[0039] In one embodiment, the aminoalkoxydisilazane compound may be represented by the following Chemical Formula 2 or Chemical Formula 3.

[0040]

Chem.

[0041]

Chem.

[0042] In Chemical Formulas 2 and 3, R 1 , R 11 , and R 12 are each independently C1-C4 alkyl, C3-C6 cycloalkyl, or C2-C3 alkenyl, R 2 , R 3 , R, and R 4a are each independently C1-C4 alkyl or C3-C6 cycloalkyl, R 4 and R 5 are each independently C1-C4 alkyl, C3-C6 cycloalkyl, or C1-C4 alkoxy, a is an integer from 0 to 4.

[0043] In one embodiment, the R 1 , R 11 , and R 12 are each independently C1-C4 alkyl or C2-C3 alkenyl, R 2 , R 3 , R, and R 4a are each independently C1-C4 alkyl, R 4 and R 5 are each independently C1-C4 alkyl or C1-C4 alkoxy, and a may be an integer from 0 to 3.

[0044] In one embodiment, the aminoalkoxydisilazane compound may be represented by the following chemical formula 4.

[0045]

Chemical formula

[0046] In the chemical formula 4, R 1 is C1-C4 alkyl or C2-C3 alkenyl, R 21 is C1-C4 alkyl, R 22 is C1-C4 alkyl or C1-C4 alkoxy, R is C1-C4 alkyl, R 23 is C1-C4 alkyl or C2-C3 alkenyl.

[0047] As an example, the R 1 may be C1-C3 alkyl or C2-C3 alkenyl, and as a specific example, it may be methyl, ethyl, isopropyl, vinyl, isopropenyl, or allyl.

[0048] As an example, the R 21 may be C1-C3 alkyl, and as a specific example, it may be methyl or ethyl.

[0049] As an example, the R 22 may be C1-C3 alkyl or C1-C3 alkoxy, or may be C1-C3 alkoxy, and as a specific example, it may be methyl, ethyl, methoxy, or ethoxy.

[0050] As an example, the R may be C1-C3 alkyl, and as a specific example, it may be methyl or ethyl.

[0051] As an example, the R 23It may be C1-C3 alkyl or C2-C3 alkenyl, and as a specific example, it may be methyl, ethyl, isopropyl, vinyl, isopropenyl, or allyl.

[0052] In one embodiment, the aminoalkoxydisilazane compound may be selected from the following compounds, but is not limited thereto.

Chemical formula

[0053] The above-mentioned aminoalkoxydisilazane compound can be produced by a method possible within the range recognizable by ordinary skilled persons.

[0054] Another aspect of the present invention provides a composition for silicon-containing thin film deposition containing the aminoalkoxydisilazane compound according to one aspect.

[0055] In one embodiment, the composition for silicon-containing thin film deposition has high volatility and contains the aminoalkoxydisilazane compound having excellent thermal stability as a precursor for thin film deposition, and its content may be included within the content range recognizable by those skilled in the art in consideration of film formation conditions of the thin film, thickness of the thin film, properties, etc.

[0056] Yet another aspect of the present invention provides a method for producing a silicon-containing thin film, including the step of depositing a silicon-containing thin film using the aminoalkoxydisilazane compound represented by the above Chemical formula 1 or a composition for silicon-containing thin film deposition containing the same.

[0057] In one embodiment, the method for producing the silicon-containing thin film can produce a high-quality silicon-containing thin film with a high deposition rate under various conditions by using the aminoalkoxydisilazane compound as a precursor.

[0058] In one embodiment, the method for manufacturing the silicon-containing thin film can be applied without limitation as long as it is a method possible within the scope recognized by those skilled in the art. For example, it may be carried out by atomic layer deposition (ALD), chemical vapor deposition (CVD), metalorganic chemical vapor deposition (MOCVD), low-pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (PECVD), or plasma-enhanced atomic layer deposition (PEALD).

[0059] In one embodiment, the aminoalkoxydisilazane compound and the reaction gas may each be supplied continuously or discontinuously, and the discontinuous supply may include the form of a pulse.

[0060] As an example, the method for manufacturing the silicon-containing thin film may include: a) maintaining the temperature of a substrate mounted in a chamber at 100°C or higher; b) adsorbing an aminoalkoxydisilazane compound according to one embodiment, or a composition for depositing a silicon-containing thin film containing the same, onto the substrate; and c) injecting a reaction gas into the substrate on which the aminoalkoxydisilazane compound, or the composition for depositing a silicon-containing thin film containing the same, is adsorbed to deposit a silicon-containing thin film.

[0061] The method for manufacturing the silicon-containing thin film may further include a step of purging to remove unreacted reactants.

[0062] Specifically, the method for manufacturing the silicon-containing thin film may include: a) maintaining the temperature of the substrate mounted in the chamber at 100 to 700 °C; b-1) adsorbing an aminoalkoxydisilazane compound according to an embodiment, or a composition for depositing a silicon-containing thin film containing the same, onto the substrate; b-2) purging the residual aminoalkoxydisilazane compound or the residual composition for depositing the thin film, and by-products; c-1) injecting a reaction gas into the substrate on which the aminoalkoxydisilazane compound or the composition for depositing the thin film containing the same is adsorbed to form a silicon-containing thin film; and c-2) purging the residual reaction gas and by-products.

[0063] As an example, when the method for manufacturing the silicon-containing thin film is performed by plasma-enhanced atomic layer deposition (PEALD) or plasma-enhanced chemical vapor deposition (PECVD), after the step a), a step of generating plasma may further be included.

[0064] As an example, in the step b), the aminoalkoxydisilazane compound or the composition for depositing a silicon-containing thin film containing the same may be injected together with a carrier gas.

[0065] The reaction gas can be any gas that is usually used together with a precursor in consideration of the type of the silicon-containing thin film to be manufactured. As a specific example, it may be any one or more selected from oxygen (O2), ozone (O3), distilled water (H2O), hydrogen peroxide (H2O2), nitric oxide (NO), nitrous oxide (N2O), nitrogen dioxide (NO2), ammonia (NH3), nitrogen (N2), hydrazine (N2H4), amine, diamine, carbon monoxide (CO), carbon dioxide (CO2), saturated or unsaturated hydrocarbons having 1 to 12 carbon atoms, and hydrogen.

[0066] The carrier gas may be one or more selected from argon, helium, and nitrogen, but is not limited thereto.

[0067] In one embodiment, the deposition conditions may be adjusted according to the structure or properties of the target thin film. Examples of the deposition conditions include the input flow rate of the aminoalkoxydisilazane compound or the silicon-containing thin film deposition composition containing the same, the reaction gas, the input flow rate of the carrier gas, the pressure, the RF power, the substrate temperature, and the like. As a specific example, the input flow rate of the aminoalkoxydisilazane compound or the silicon-containing thin film deposition composition may be 10 to 1,000 cc / min, the carrier gas may be 10 to 1,000 cc / min, the flow rate of the reaction gas may be 1 to 1,500 cc / min, the pressure may be 0.5 to 10 torr, the RF power may be 50 to 1,000 W, and the substrate temperature may be adjusted to 100 to 700 °C, 300 to 700 °C, or 400 to 700 °C, but is not limited thereto.

[0068] The substrate may be a substrate containing one or more semiconductor materials among Si, Ge, SiGe, GaP, GaAs, SiC, SiGeC, InAs, and InP, an SOI (Silicon On Insulator) substrate, a quartz substrate, or a glass substrate for display, a flexible plastic substrate such as polyimide, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polymethyl methacrylate (PMMA), polycarbonate (PC), polyethersulfone (PES), polyester, etc., but is not limited thereto.

[0069] In addition to immediately forming a thin film on the substrate, a number of conductive layers, dielectric layers, or insulating layers, etc. may be formed between the substrate and the silicon-containing thin film.

[0070] According to one embodiment, by using the above-mentioned aminoalkoxydisilazane compound as a precursor, a high-quality silicon-containing thin film can be manufactured.

[0071] As an example, the silicon-containing thin film can be any thin film that can be manufactured within the range recognizable by those skilled in the art. Specifically, it may be a silicon oxide film (SiO2), a silicon oxycarbide film (SiOC), a silicon nitride film (SiN), a silicon oxynitride film (SiON), a silicon carbonitride film (SiCN), or a silicon carbide film (SiC), etc. In addition, high-quality and diverse thin films containing silicon can be manufactured within the range recognizable by those skilled in the art, and they can be used for gate insulating films, dielectric films of capacitors, tunnel insulating films of non-volatile memory elements, etc.

[0072] Hereinafter, the present invention will be further specifically described by the following examples. First of all, the terms and words used in this specification and the claims should not be construed as being limited to their ordinary or dictionary meanings, but should be construed in a meaning and concept consistent with the technical idea of the present invention in accordance with the principle that the inventor can appropriately define the concept of the terms in order to explain his invention in the best way.

[0073] Therefore, it should be understood that the examples described in this specification and the configurations shown in the drawings are only the most preferred example of the present invention and do not represent all of the technical ideas of the present invention. At the time of filing this application, there can be various equivalents and modifications that can replace them.

[0074] Hereinafter, the synthesis examples were carried out under anhydrous and inert atmosphere using a glove box or a Schlenk tube. The structure of the aminoalkoxydisilazane compound was analyzed by NMR spectrum (Nuclear Magnetic Resonance, NMR, 400MHz Ultrashield, Buruker). The thermal stability, volatility and decomposition temperature of the aminoalkoxydisilazane compound were analyzed by thermogravimetric analysis (Thermogravimetric analysis, TGA, L81-II, LINSEIS).

[0075] [Example 1]Synthesis of ((Dimethylamino)dimethylsilyl)(trimethoxysilyl)(isopropyl)amine Step 1: Synthesis of 1-chloro-N-isopropyl-1,1-dimethylsilanamine [Chemical formula] Under anhydrous and inert atmosphere, into a flame-dried 10 L flask, 311.16 g (2.411 mol) of dichlorodimethylsilane ((CH3)2SiCl2) and 3,319 mL (24.110 mol) of n-pentane (n-C5H 12 ) were charged. While maintaining the internal temperature at -20 °C, 285.03 g (4.821 mol) of isopropylamine ((CH3)2CHNH2) was slowly added. After the addition was completed, the mixture was stirred at room temperature for 3 hours to complete the reaction. The reaction mixture was filtered to remove isopropylamine hydrochloride ((CH3)2CHNH2·HCl). After removing the solvent from the obtained filtrate under reduced pressure, vacuum distillation was carried out under the conditions of 60 °C and 100 torr to obtain the title compound 1-chloro-N-isopropyl-1,1-dimethylsilanamine ((CH3)2CHNHSi(CH3)2Cl) (yield 73%). 1 H-NMR (C6D6): δ 0.25 (s, 6H, Si(CH3)2), 0.92 (d, 6H, (CH(CH3)2), 2.99 (m, 1H, CH)

[0076] Step 2: Synthesis of Lithium dimethylamide [Chemical formula] Under anhydrous and inert atmosphere, into a flame-dried 3 L flask, 917 mL (2.411 mol) of 2.63 M n-butyllithium (n-C4H9Li) and n-hexane (n-C6H14 ) 786 mL (6.027 mol) was charged, and 114.12 g (2.532 mol) of dimethylamine ((CH3)2NH) was slowly added while maintaining the internal temperature at -20 °C. After the addition was complete, the mixture was stirred at room temperature for 3 hours to complete the reaction. After the reaction was complete, the solvent was removed under reduced pressure and dried to obtain an equivalent amount of the title compound, lithium dimethylamide (LiN(CH3)2).

[0077] Step 3: Synthesis of (Dimethylamino)(isopropylamino)dimethylsilane

Chemical formula

[0078] Step 4: Synthesis of ((Dimethylamino)dimethylsilyl)(trimethoxysilyl)(isopropyl)amine [Chemical formula] Under anhydrous and inert atmosphere, into a flame-dried 3 L flask, add 50 g (0.195 mol) of (dimethylamino)(isopropylamino)dimethylsilane ((CH3)2NSi(CH3)2NHCH(CH3)2) synthesized in Step 3 and 1,527 mL (11.707 mol) of n-hexane (n-C6H 14 ) While maintaining the internal temperature at -50 °C, slowly add 74 mL (0.195 mol) of 2.63 M n-butyllithium (n-C4H9Li), and then stir at room temperature for 3 hours. After the stirring is completed, slowly add 29.71 g (0.195 mol) of tetramethyl orthosilicate (Si(OCH3)4) to the reaction mixture, and stir at room temperature for 24 hours to complete the reaction. Filter the reaction mixture to remove lithium methoxide salt (LiOCH3), remove the solvent from the obtained filtrate under reduced pressure, and then perform vacuum distillation under the conditions of 48 °C and 0.5 torr to obtain 29 g (0.103 mol) of the title compound ((dimethylamino)dimethylsilyl)(trimethoxysilyl)(isopropyl)amine ((CH3)2NSi(CH3)2N(CH(CH3)2)Si(OCH3)3) as a colorless liquid (yield 53%). 11H-NMR (C6D6): δ 0.29 (s, 6H, Si(CH3)2), 1.32 (d, 6H, CH(CH3)2), 2.53 (s, 6H, N(CH3)2), 3.44 (s, 9H, Si(OCH3)3), 3.29 (m, 1H, CH(CH3)2) 13 13C-NMR (C6D6): δ 25.1, 37.70, 45.54, 49.76 29 29Si-NMR (C6D6): δ -3.96, -62.73

[0079] Figure 1 shows the results of thermogravimetric analysis (TGA) of ((dimethylamino)dimethylsilyl)(trimethoxysilyl)(isopropyl)amine produced in Example 1. Referring to Figure 1, it can be seen that the compound of Example 1 has fast vaporization characteristics, and at around 240 °C, more than 99% by weight was vaporized without any residual substances due to thermal decomposition. From this, it can be seen that the compound of Example 1 is very excellent in thermal stability and volatility.

[0080] As described above, the present invention has been described by specific matters and limited examples and comparative examples, but this is only provided for a more general understanding of the present invention, and the present invention is not limited to the above examples. Those with ordinary knowledge in the field to which the present invention belongs can make various modifications and deformations from such descriptions. Therefore, the idea of the present invention should not be limited to the above-described examples, and not only the appended claims, but also those equivalent to the claims or those with equivalent deformations, etc., can all be said to belong to the scope of the idea of the present invention.

Claims

1. An aminoalkoxydisilazane compound represented by the following chemical formula 1. 【Chemistry 1】 (In the above Chemical Formula 1, R １ , R １１ , and R １２ are each independently C1-C7 alkyl, C3-C7 cycloalkyl, or C2-C7 alkenyl, or １１ and R １２ may be linked together to form a ring, R ２ and R ３ are each independently C1-C7 alkyl, C3-C7 cycloalkyl, or C1-C7 alkoxy; R is C1-C7 alkyl or C3-C7 cycloalkyl; R ４ and R ５ are each independently C1-C7 alkyl, C3-C7 cycloalkyl, C1-C7 alkoxy, or C3-C7 cycloalkyloxy.

2. The R １ , R １１ , and R １２ are each independently C1-C5 alkyl, C3-C7 cycloalkyl, or C2-C4 alkenyl, or １１ and R １２ may be linked to each other via a C2-C7 alkylene to form a ring; R ２ and R ３ are each independently C1-C5 alkyl or C3-C7 cycloalkyl; R is C1-C5 alkyl or C3-C7 cycloalkyl; R ４ and R ５ is each independently C1-C5 alkyl, C3-C7 cycloalkyl, or C1-C5 alkoxy.

3. 2. The aminoalkoxydisilazane compound according to claim 1, which is represented by the following chemical formula 2 or 3: 【Chemistry 2】 (In the above Chemical Formulas 2 and 3, R １ , R １１ , and R １２ are each independently C1-C4 alkyl, C3-C6 cycloalkyl, or C2-C3 alkenyl; R ２ , R ３ , R, and R ４ａ are each independently C1-C4 alkyl or C3-C6 cycloalkyl; R ４ and R ５ are each independently C1-C4 alkyl, C3-C6 cycloalkyl, or C1-C4 alkoxy; a is an integer from 0 to 4.

4. The R １ , R １１ , and R １２ are each independently C1-C4 alkyl or C2-C3 alkenyl; R ２ , R ３ , R, and R ４ａ are each independently C1-C4 alkyl; R ４ and R ５ are each independently C1-C4 alkyl or C1-C4 alkoxy; 4. The aminoalkoxydisilazane compound according to claim 3, wherein a is an integer of 0 to 3.

5. The R １ , R ２ , R ３ , R, R １１ , and R １２ are each independently C1-C4 alkyl; R ４ and R ５ are each independently C1-C4 alkyl or C1-C4 alkoxy.

6. 2. The aminoalkoxydisilazane compound of claim 1, which is selected from the following structures: 【Chemistry 3】

7. A composition for silicon-containing thin film deposition comprising the aminoalkoxydisilazane compound according to any one of claims 1 to 6.

8. 1. A method for producing a silicon-containing thin film, comprising the step of depositing a silicon-containing thin film using an aminoalkoxydisilazane compound represented by the following Chemical Formula 1, or a composition for depositing a silicon-containing thin film comprising the same: 【Chemistry 4】 (In the above Chemical Formula 1, R, R １ ~R ５ , R １１ , and R １２ is defined as in claim 1.

9. 9. The method of claim 8, wherein the method is performed by atomic layer deposition (ALD), chemical vapor deposition (CVD), metalorganic chemical vapor deposition (MOCVD), low pressure chemical vapor deposition (LPCVD), plasma enhanced chemical vapor deposition (PECVD), or plasma enhanced atomic layer deposition (PEALD).

10. 9. The method for producing a silicon-containing thin film according to claim 8, wherein the silicon-containing thin film is a silicon oxide film (SiO), a silicon oxycarbide film (SiOC), a silicon nitride film (SiN), a silicon oxynitride film (SiON), a silicon carbonitride film (SiCN), or a silicon carbide film (SiC).

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