High-voltage substrate processing device

Abstract

To provide a high-voltage substrate processing device that minimizes the possibility of contamination of a substrate by foreign particles generated during a chamber fastening process.SOLUTION: A high-voltage substrate processing device includes an internal chamber 110 formed to accommodate a substrate W to be processed and a processing gas supplied at a first pressure higher than atmospheric pressure, an external housing 121 accommodating the internal chamber, and an external door 125 formed to be movable between a closed state in which the external housing is closed and an open state in which the external housing is opened, and further includes an external chamber 120 formed to accommodate a protective gas supplied at a second pressure set relative to the first pressure, a fastening module 150 formed to fasten the external housing and the external door in the closed state, and a collection module 170 located adjacent to the contact portion for fastening between the external housing and the external door and formed to collect foreign matter.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to a high-pressure substrate processing apparatus used for processing a substrate at high pressure.

Background Art

[0002] Generally, various processes are performed on a semiconductor wafer during the progress of a semiconductor device manufacturing process. Examples of such processes include oxidation, nitridation, vapor deposition, and ion implantation. There is also a process of heat treatment with hydrogen or deuterium to improve the interface characteristics of a semiconductor device.

[0003] The gas used for the process is supplied into the chamber at high pressure and acts on the semiconductor wafer. In order to maintain a high pressure inside the chamber, the fastening between the housing and the door of the chamber must be firm.

[0004] During the fastening process between the housing and the door, friction may occur due to their relative movement. Friction induces foreign matter, and the foreign matter causes contamination of the wafer.

[0005] The above-described background art is technical information that the inventor possessed or acquired during the derivation of embodiments of the present invention, and is not necessarily published prior art publicly available to the general public before this application.

Summary of the Invention

Problems to be Solved by the Invention

[0006] An object of the present invention is to provide a high-pressure substrate processing apparatus that minimizes the possibility of foreign matter generated during the fastening process of the chamber from contaminating the substrate.

Means for Solving the Problems

[0007] A high-pressure substrate processing apparatus according to one aspect of the present invention for realizing the above problems includes an internal chamber formed to accommodate a processing gas supplied at a first pressure higher than atmospheric pressure and a substrate to be processed; an external housing that houses the internal chamber, and an external door that is movably formed between a closed state in which the external housing is closed and an open state in which the external housing is opened, and an external chamber formed to accommodate a protective gas supplied at a second pressure set in relation to the first pressure; a fastening module formed to fasten the external housing and the external door in the closed state; and a collection module that is located adjacent to a contact portion for fastening between the external housing and the external door and is formed to collect foreign matter.

[0008] Here, the fastening module includes a support protrusion connected to the external housing; and a locking protrusion connected to the external door and supported by the support protrusion by being switched from a first relationship shifted with respect to the support protrusion to a second relationship corresponding to the support protrusion. The foreign matter includes metal particles generated by contact between the support protrusion and the locking protrusion during the switching from the first relationship to the second relationship. The collection module may include a unit that generates a magnetic force for adsorbing the metal particles.

[0009] Here, the magnetic force unit may be installed on either one of the external housing and the external door.

[0010] Here, the fastening module further includes a rotating member on which the support protrusion protrudes, and the magnetic force unit may be installed on the external housing via the rotating member.

[0011] Here, the rotating member includes a rotating ring rotatably mounted on the external housing, and the magnetic force unit may be attached to at least one of the support protrusion and the rotating ring.

[0012] Here, the magnetic force unit may include a magnet; and a coating layer covering the magnet to prevent oxidation of the magnet.

[0013] Here, the coating layer may include at least one of nickel, magnesium, titanium, tungsten, and chromium as a coating material.

[0014] Here, the magnetic force unit may include a plurality of magnets forming a circular array around the central axis of the external door.

[0015] Here, the plurality of magnets may be arranged so as to be classified into a plurality of groups according to the distance from the central axis.

[0016] A high-pressure substrate processing apparatus according to another aspect of the present invention includes a chamber including a housing and a door formed to open and close the housing; a fastening module formed to fasten the housing and the door in order to maintain the process gas injected into the chamber at a pressure higher than atmospheric pressure; and a collection module located adjacent to a contact portion for fastening between the housing and the door and formed to collect metal particles, and the collection module may include a magnetic force unit including a magnet to which the metal particles are adsorbed.

[0017] Here, the fastening module includes a support protrusion connected to the housing; and a locking protrusion connected to the door and supported by the support protrusion by being switched from a first relationship shifted with respect to the support protrusion to a second relationship corresponding to the support protrusion, and the metal particles are generated by contact between the support protrusion and the locking protrusion during relative rotation of the support protrusion with respect to the locking protrusion for the switching from the first relationship to the second relationship.

[0018] Here, the magnet may include a plurality of magnets forming a circular array around the central axis of the door.

[0019] Here, the magnetic unit may include a coating layer coated with at least one of nickel, magnesium, titanium, tungsten, and chromium on the magnet.

[0020] Here, the process gas includes a processing gas containing an active gas and a protective gas that is an inert gas, and the housing includes an internal housing formed to accommodate the substrate to be processed and the processing gas; and an external housing that accommodates at least a part of the internal housing and is coupled to the internal housing to form a closed space that accommodates the protective gas together with the internal housing. The door may be formed to close the internal housing.

[0021] Here, the fastening module includes a supporting protrusion coupled to the external housing; and a locking protrusion coupled to the door and switched from a first relationship that is offset from the supporting protrusion to a second relationship in which the door is supported on the supporting protrusion by rotating. The magnetic unit may be formed to collect the metal particles generated by the contact between the supporting protrusion and the locking protrusion during the switching from the first relationship to the second relationship.

Advantages of the Invention

[0022] According to the high-pressure substrate processing apparatus according to the present invention configured as described above, foreign matter derived from the fastening operation for fastening the housing and the door of the chamber for high-pressure processing of the substrate is collected by the collection module, so that the foreign matter generated from the fastening operation can be removed before affecting the substrate. Therefore, the possibility of the substrate being contaminated by foreign matter can be minimized.

Brief Description of the Drawings

[0023]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

DETAILED DESCRIPTION OF THE INVENTION

[0024] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0025] The present invention is not limited to the embodiments disclosed below, but can be modified in various ways and can be implemented in various different forms. However, this embodiment is provided to make the disclosure of the present invention complete and to fully inform those with ordinary knowledge of the scope of the invention. Therefore, the present invention is not limited to the embodiments disclosed below, and it should be understood that not only can the configurations of any one embodiment be replaced or added to the configurations of other embodiments, but also all modifications, equivalents, or alternatives included in the technical idea and scope of the present invention are included.

[0026] The attached drawings are merely for facilitating an easy understanding of the embodiments disclosed in this specification, and the technical concept disclosed in this specification is not limited by the attached drawings. It should be understood that the attached drawings include all modifications, equivalents, or alternatives included in the spirit and technical scope of the present invention. In the drawings, components may be represented as being exaggeratedly large or small in size or thickness for convenience of understanding, etc., but the protection scope of the present invention should not be construed restrictively thereby.

[0027] The terms used in this specification are merely used for explaining specific examples or embodiments, and are not intended to limit the present invention. And singular expressions include plural expressions unless the context clearly has a different meaning. Terms such as "including" and "comprising" in the specification are intended to specify the presence of features, numbers, steps, operations, components, parts, or combinations thereof described in the specification. That is, terms such as "including" and "comprising" in the specification should be understood not to preclude in advance the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0028] Terms including ordinal numbers such as first, second, etc. can be used to explain various components, but the components are not limited by the terms. The terms are used only for the purpose of distinguishing one component from another.

[0029] When it is mentioned that a certain component is "connected / communicated with" or "connected to" another component, it should be understood that it may be directly connected / communicated with or connected to the other component, but there may also be other components in between. In contrast, when it is mentioned that a certain component is "directly connected / communicated with" or "directly connected to" another component, it should be understood that there are no other components in between.

[0030] When a component is referred to as being "above" or "below" another component, it should be understood that not only is it disposed immediately above the other component, but there may also be other components in between.

[0031] Unless otherwise defined, all terms used herein, including technical or scientific terms, shall have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms defined in commonly used dictionaries shall be interpreted to have a meaning consistent with the meaning in the context of the related art and shall not be interpreted in an idealized or overly formal sense unless clearly defined in this application.

[0032] FIG. 1 is a conceptual diagram of a high-pressure substrate processing apparatus 100 according to an embodiment of the present invention.

[0033] Referring to this drawing, the high-pressure substrate processing apparatus 100 may include an internal chamber 110, an external chamber 120, an air supply module 130, and an exhaust module 140.

[0034] The internal chamber 110 forms a processing chamber for accommodating a substrate to be processed. The internal chamber 110 may be made of a non-metallic material, such as quartz, in order to reduce the risk of contamination induction on the substrate in a high-temperature and high-pressure working environment. By the operation of a heater (not shown) disposed outside the internal chamber 110, the temperature of the internal chamber 110 reaches several hundred to several thousand degrees Celsius. The substrate may be, for example, a semiconductor wafer (see FIG. 2) W mounted on a holder (see FIG. 2) 113. The substrate is not limited to the wafer, and other things are possible as long as they are base structures for making circuits. For example, the substrate may also include glass for display manufacturing. The holder 113 may be a boat capable of stacking a plurality of substrates to be processed in multiple layers.

[0035] The external chamber 120 is arranged to accommodate the internal chamber 110. Unlike the internal chamber 110, since the external chamber 120 is free from the risk of inducing contamination to the substrate, it may be made of a metal material. The external chamber 120 may have a hollow protective chamber that accommodates the internal chamber 110.

[0036] The gas supply module 130 is configured to supply gas to the internal chamber 110 and the external chamber 120. The gas supply module 130 has a gas supply device 131 that communicates with the utility (gas supply facility) of the semiconductor factory. The gas supply device 131 selectively provides, for example, hydrogen gas (H2), deuterium gas (D2), fluorine gas (F2), ammonia gas (NH3), chlorine gas (Cl2), nitrogen gas (N2), etc. as process gas to the internal chamber 110. The gas supply device 131 provides, for example, nitrogen gas or argon gas (Ar), which is an inert gas, as protective gas to the external chamber 120. The process gas and the protective gas are introduced into the internal chamber 110 or the external chamber 120 through the process gas line 133 or the protective gas line 135, respectively. The protective gas introduced into the external chamber 120 is specifically introduced into the space (protective space) between the external chamber 120 and the internal chamber 110. The process gas and the protective gas may be simply referred to as process gas.

[0037] The process gas is at a pressure higher than atmospheric pressure (high pressure), and is supplied, for example, to reach several atmospheres to several tens of atmospheres, or more. When the pressure of the process gas is the first pressure and the pressure of the protective gas is the second pressure, they can be maintained in a set relationship (range). For example, the second pressure is substantially the same as the first pressure or slightly higher than it. Such a pressure relationship provides the advantage of preventing the reaction gas from leaking from the internal chamber 110 and preventing the internal chamber 110 from cracking. The second pressure may also be set slightly lower than the first pressure, and in that case, an effect similar to the above can also be achieved.

[0038] The exhaust module 140 is configured to exhaust the process gas. An exhaust pipe 141 is connected to the upper part of the internal chamber 110 to exhaust the process gas from the internal chamber 110. Similarly, an exhaust pipe 145 connected to the external chamber 120 may be provided to exhaust the protective gas from the external chamber 120. Since these exhaust pipes 141 and 145 communicate with each other, the process gas is diluted by the protective gas during the exhaust process and its concentration is reduced.

[0039] The fastening structure of the external chamber 120 will be described with reference to FIGS. 2 to 4. FIG. 2 is a perspective view showing an open state in which the external door 125 opens the external housing 121 in the high-pressure substrate processing apparatus 100 of FIG. 1. FIG. 3 is a cross-sectional view showing the relationship between the support protrusion 153 and the locking protrusion 155 when the closed state in which the external door 125 closes the external housing 121 in FIG. 2 is realized. FIG. 4 is a partial perspective view showing the fastening state between the external housing 121 and the external door 125 in the high-pressure substrate processing apparatus 100 of FIG. 2.

[0040] Referring to this drawing, the internal chamber 110 includes an internal housing (not shown) and an internal door 115. The internal housing forms the processing chamber for accommodating the substrate W, and its lower part may have an open form. The internal housing is placed on the external housing 121 described later. The internal door 115 is configured to close the open lower part of the internal housing. The internal door 115 has a shape of a feed trough that is entirely open downward. When the internal door 115 descends in the opening and closing direction (E), the processing chamber is opened (open state, see FIG. 2). The opening and closing direction (E) is the direction in which the internal door 115 approaches or moves away from the internal housing. The substrate W is loaded into or unloaded from the processing chamber in the open state. When the internal door 115 ascends in the opening and closing direction (E), the internal door 115 comes into contact with the internal housing. In this case, it can be said that the processing chamber is closed (closed state).

[0041] The external chamber 120 also includes an external housing 121 and an external door 125. The external housing 121 may be formed to entirely accommodate the internal chamber 110. Thereby, the external housing 121 may be formed to enclose not only the internal housing but also the internal door 115. The external door 125 can also open and close the external housing 121 by moving. The external door 125 is connected to the internal door 115 by a support member 127 to support the internal door 115. In that case, the internal door 115 can open and close the internal housing while moving in conjunction with the raising and lowering of the external door 125. The expressions of the open state and the closed state can also be directly applied to the relationship between the external housing 121 and the external door 125. Different from the above, the internal door 115 may be configured to open and close independently of the external door 125.

[0042] The high-pressure substrate processing apparatus 100 may further include a fastening module 150 for fastening the external housing 121 and the external door 125 in the closed state. The fastening module 150 enables the protective gas to be maintained at the second pressure within the external chamber 120. If the internal door 115 is supported by the external door 125 by the support member 127, the fastening module 150 may also fasten the internal door 115 to the internal housing. As a result, the fastening module 150 can enable the processing gas to be maintained at the first pressure within the internal chamber 110.

[0043] Specifically, the fastening module 150 may include a rotating member 151, a supporting protrusion 153, and a locking protrusion 155.

[0044] The rotating member 151 is configured to be rotatably connected to the external housing 121 or the external door 125. In this embodiment, the rotating member 151 may be a rotating ring mounted on the external housing 121. The rotating ring 151 is arranged to wrap around the outer peripheral surface of the external housing 121 and rotates about the central axis of the external housing 121. The force for rotating the rotating ring 151 is provided by a drive wheel (not shown) engaged with the rotating ring 151. The rotating ring 151 may be formed so as to form a second plane parallel to the first plane formed by the supporting protrusion 153 or the locking protrusion 155 described later. The first plane and the second plane may be planes substantially perpendicular to the opening and closing direction (E).

[0045] The supporting protrusion 153 may be a protrusion connected to the external housing 121. Specifically, the supporting protrusion 153 can be connected to the external housing 121 by the rotating ring 151. The supporting protrusion 153 may be formed to protrude, for example, from the inner peripheral surface of the rotating ring 151. A plurality of supporting protrusions 153 may be arranged along the circumferential direction of the rotating ring 151.

[0046] The locking protrusion 155 may be a protrusion connected to the external door 125. For example, the locking protrusion 155 may be formed to protrude from the outer peripheral surface of the external door 125. The locking protrusion 155 has a size that allows it to pass between a pair of adjacent supporting protrusions 153 when the external door 125 rises along the opening and closing direction (E). The locking protrusion 155 is located at a higher level than the supporting protrusion 153 in the closed state (see FIG. 3). When the supporting protrusion 153 rotates in the rotational direction (R), the locking protrusion 155 is positioned on the supporting protrusion 153 and supported by the supporting protrusion 153 (fastened state, see FIG. 4). The level of the external door 125 in the fastened state is substantially the same as that in the closed state. The fastened state can also be understood as one of the states in the closed state.

[0047] With the support protrusion 155 being offset from the supporting protrusion 153 (first relationship, see Fig. 3), when the external door 125 rises along the opening and closing direction (E), the closed state is achieved. In the closed state, when the rotating ring 151 rotates in the rotational direction (R), the supporting protrusion 153 rotates with respect to the locking protrusion 155. The upper surface of the supporting protrusion 153 contacts and rotates with the bottom surface of the locking protrusion 155. By this rotation, the supporting protrusion 153 can be positioned corresponding to the locking protrusion 155 (second relationship, see Fig. 4).

[0048] Foreign matter may be generated from the fastening operation of the fastening module 150 {specifically, the rotation of the rotating ring 151 for switching from the first relationship to the second relationship (or vice versa)}. The high-pressure substrate processing apparatus 100 may further include a collection module 170 for collecting the foreign matter.

[0049] The foreign matter may be particles generated by the contact between the supporting protrusion 153 and the locking protrusion 155, or particles generated by a cause different from the contact and floating around the supporting protrusion 153 and the locking protrusion 155. The former particles are generated by the friction between the upper surface of the supporting protrusion 153 and the lower surface of the locking protrusion 155. The collection module 170 may be an electro-force unit that uses the force acting between electric charges to collect the foreign matter. The electro-force unit may be, for example, one in which positive and negative charges are separated and static electricity is formed by applying an ultra-high voltage current to a non-woven fabric (electrostatic filter). Different from the above, the collection module 170 may also include a tape having an adhesive component. The electro-force unit and the adhesive tape can be installed at substantially the same position as the installation position of the magnetic force unit described later.

[0050] Since the supporting protrusion 153 and / or the locking protrusion 155 is made of metal, the particles mainly have a metal component. Accordingly, the collection module 170 may also have a magnetic force unit that generates a magnetic force to adsorb metal particles.

[0051] The magnetic unit may be installed on the rotating ring 151. Since the rotating ring 151 is attached to the external housing 121, it can be said that the magnetic unit is consequently installed on the external housing 121. Such an arrangement is distinguished from the case where the magnetic unit is installed on the external door 125.

[0052] The magnetic unit is classified into, for example, a first magnetic unit 171, a second magnetic unit 173, and a third magnetic unit 175. A plurality of each of them 171, 173, 175 may be provided. The first magnetic unit 171 to the third magnetic unit 175 are grouped according to the arrangement position, shape, etc. Specifically, if the first magnetic unit 171 is attached to the support protrusion 153, the second magnetic unit 173 may be attached between a pair of adjacent support protrusions 153 on the inner peripheral surface of the rotating ring 151. In contrast, the third magnetic unit 175 is attached to the bottom surface of the rotating ring 151. The first magnetic unit 171 and the second magnetic unit 173 may be arranged within the space defined by the inner surface of the external housing 121. The third magnetic unit 175 may be arranged within the space defined by the outer surface of the external housing 121. All of the first magnetic unit 171 to the third magnetic unit 175 may be adopted, or only one or two of them may be adopted. Only one of them 171, 173, 175, rather than a plurality, may also be provided.

[0053] The first magnetic unit 171 to the third magnetic unit 175 may be located adjacent to the contact portion between the support protrusion 153 and the locking protrusion 155. For example, the magnetic units 171, 173, 175 may be located generally between an upper boundary (UL) corresponding to the upper surface of the locking protrusion 155 and a lower boundary (LL) corresponding to the bottom surface of the support protrusion 153 along the opening / closing direction (E) (see FIG. 3). Differently, the upper boundary (UL) may be set to be higher by the thickness of the locking protrusion 155 or several times the thickness thereof, and the lower boundary (LL) may be set to be lower by the thickness of the support protrusion 153 or several times the thickness thereof. Further, the magnetic units 171, 173, 175 may be located at a height lower than the contact portion. Such an arrangement is advantageous for collecting metal particles that they 171, 173, 175 descend from the contact portion.

[0054] In an alternative embodiment, the magnetic unit may be directly installed on the external door 125 or may be installed on the external door 125 via the locking protrusion 155. For example, the magnetic unit may be arranged on the side surface of the locking protrusion 155 or between a pair of adjacent locking protrusions 155. The magnetic unit may also be attached to a plurality of outer surfaces of the external door 125. Specifically, the magnetic unit may be attached to the side surface and the bottom surface of the external door 125.

[0055] In the above embodiments, the magnetic unit may be located outside the closed space defined by the external housing 121 and the external door 125. The closed space is the space into which the process gas, specifically the protective gas, is injected.

[0056] FIG. 5 is a perspective view showing the magnetic units 171, 173, 175 in FIG. 4 individually.

[0057] Referring to this drawing, the first magnetic unit 171 to the third magnetic unit 175 have shapes and sizes corresponding to the areas where they are to be attached. In this embodiment, the first magnetic unit 171 and the second magnetic unit 173 are substantially rectangular, and the third magnetic unit 175 is substantially circular. The magnetic units 171, 173, 175 are not limited to the illustrated shapes (sizes) and can have different shapes. For example, the third magnetic unit 175 can have a ring shape corresponding to the bottom surface of the rotating ring 151, or a curved shape. The magnetic units 171, 173, 175 are advantageous for capturing the metal particles as long as the area of the circumferential surface is large as permitted by the installation object.

[0058] Since the basic structures of the magnetic units 171, 173, 175 are the same as each other, the description will be based on the first magnetic unit 171. The first magnetic unit 171 has a magnet that generates a magnetic force. The magnet may be a neodymium magnet. If the N pole 171a of the magnet occupies the front portion, the S pole 171b of the magnet occupies the back portion. Here, the front portion and the back portion may be regions corresponding to the circumferential surface of the magnet. A display portion (not shown) for indicating the polarity of the magnet may be formed on the front portion. The display portion is a label for indicating the N pole 171a and may be, for example, a dot formed on the front portion or a character (e.g., "N"). The dot or the character may be printed on the front portion, or may be engraved or embossed.

[0059] The outer surface of the magnet may be covered by a coating layer 171c. The coating layer 171c is for preventing oxidation of the magnet. As a coating material for forming the coating layer 171c, for example, one selected from nickel, magnesium, titanium, tungsten, and chromium may be used. The coating layer 171c may be an alloy of two of the coating materials. The coating layer 171c may also be a laminate of a single one of the coating materials or a laminate of an alloy of the single material.

[0060] FIG. 6 is a perspective view for explaining the arrangement of the collection module 170 of FIG. 4.

[0061] Referring to this drawing, the plurality of magnetic force units 171, 173, 175 can form a circular arrangement around the central axis C of the outer door 125. The magnetic force units 171, 173, 175 are at different distances from the central axis C. The plurality of first magnetic force units 171 are separated from the central axis C by a first distance (D1), and the plurality of second magnetic force units 173 are separated from the central axis C by a second distance (D2). The plurality of third magnetic force units 175 are separated from the central axis C by a third distance (D3). The first distance (D1) is the shortest, and the second distance (D2) and the third distance (D3) may be similar to each other.

[0062] The magnetic force units 171, 173, 175 may be arranged such that the same magnetic poles are located on the surfaces facing the central axis C. For example, N poles may be located on the circumferential surfaces of the first magnetic force unit 171 and the second magnetic force unit 173 facing the central axis C. The third magnetic force unit 175 may have an N pole located on the surface that appears outside.

[0063] With such an arrangement, the first magnetic force unit 171 can adsorb the metal particles most effectively. The metal particles generated during the contact process between the locking protrusion 155 and the supporting protrusion (refer to FIG. 4 above) 153 fall toward the first magnetic force unit 171 located closest (refer to F1), so the first magnetic force unit 171 can capture the metal particles most successfully. A part of the metal particles falls on both sides of the supporting protrusion 153 (refer to F2), and the second magnetic force unit 173 can capture such metal particles. Further, when the outer door 125 moves to the open state, a laminar flow is formed from the protection chamber to the outside. Such a laminar flow carries the metal particles not only on the inner circumferential surface of the rotating ring 151 but also on the bottom surface (refer to F3), so the third magnetic force unit 175 can also capture a part of the metal particles.

[0064] In an embodiment of the alternative, the rotating ring as the rotating member may be rotatably connected to the external door. If the supporting protrusion is formed on the external housing, the locking protrusion can be formed on the rotating ring. The collection module is installed on the external housing and can collect particles generated by relative rotation between the locking protrusion and the supporting protrusion. The collection module can still be located outside the closed space defined by the external door and the external housing. Different from the above, the external door can also rotate with the locking protrusion connected to the external door. In that case, a means for blocking the transmission of the rotational force of the external door to the internal door, for example, a bearing, may be installed between the internal door and the external door. In that case, the substrate may not rotate even though the external door rotates. The collection module may be installed on the external housing or the external door or the like.

[0065] In another alternative embodiment, the locking protrusion 155 may be translated in a manner different from the rotational movement with respect to the supporting protrusion 153, for example, translational motion. Also in this case, the metal particles generated during the switching from the first relationship to the second relationship can be collected by the collection module 170.

[0066] In this specification, the processing apparatus 100 with high-pressure substrates having double chambers 110 and 120 has been described as an example, but the present invention is not limited thereto. A processing apparatus having a single chamber also belongs to the scope of the present invention. The single chamber consists of one housing and one door. A substrate is disposed in the chamber, and a process gas, specifically a processing gas, for processing the substrate is supplied. The fastening module 150 and the collection module 170 can be directly applied to such a single chamber as well.

[0067] The configurations of the fastening module 150 and the collection module 170 can also be applied to a semi-dual chamber, which is an intermediate form between the dual chamber and the single chamber. The semi-dual chamber can have two housings {an inner housing and an outer housing} and one door. The two housings can be joined, either by their own shapes or with the intervention of separate members, to form a closed space (corresponding to the protection space). Similar to the previous embodiments, the substrate is disposed in the processing chamber of the inner housing, the processing gas can be injected, and the protection gas can be injected into the closed space. Different from the previous embodiments, the door cannot be completely protected by the protection gas and is exposed to the outside. The door may correspond to the outer door in the previous embodiments. The door can open and close the inner housing. Although a batch type processing apparatus is exemplified in this specification, the present invention is not limited thereto. The present invention can be directly applied to a single wafer type processing apparatus as well.

Explanation of Reference Numerals

[0068] 100: High-pressure substrate processing apparatus 110: Inner chamber 120: Outer chamber 121: Outer housing 125: Outer door 130: Air supply module 140: Exhaust module 150: Fastening module 151: Rotating ring 153: Supporting protrusion 155: Locking protrusion 170: Collection module 171: First magnetic unit 173: Second magnetic unit 175: Third magnetic unit

Claims

1. an interior chamber configured to contain a substrate to be processed and a process gas supplied at a first pressure greater than atmospheric pressure; an outer housing containing the inner chamber; and an outer door formed to be movable between a closed state for closing the outer housing and an open state for opening the outer housing, the outer chamber being formed to contain a protective gas supplied at a second pressure set relative to the first pressure; a fastening module configured to fasten the outer housing and the outer door in the closed state; and a collection module disposed adjacent to a contact portion for fastening between the outer housing and the outer door and configured to collect foreign matter; A high-voltage substrate processing apparatus comprising:

2. The fastening module comprises: a support protrusion coupled to the outer housing; and a locking protrusion coupled to the exterior door and supported by the support protrusion by switching from a first offset relationship relative to the support protrusion to a second corresponding relationship to the support protrusion; The foreign object is metal particles generated by contact between the support protrusion and the locking protrusion during switching from the first relationship to the second relationship; The collection module includes:

2. The high pressure substrate processing apparatus according to claim 1, further comprising a magnetic unit that generates a magnetic force for attracting the metal particles.

3. The magnetic force unit includes: The high pressure substrate processing apparatus of claim 2 , wherein the high pressure substrate processing apparatus is installed in one of the outer housing and the outer door.

4. The fastening module comprises: The support protrusion further includes a rotating member, The magnetic force unit includes:

3. The high pressure substrate processing apparatus according to claim 2, wherein the high pressure substrate processing apparatus is installed in the outer housing via the rotating member.

5. The rotating member is a rotating ring rotatably mounted on the outer housing; The magnetic force unit includes: The high pressure substrate processing apparatus of claim 4 , wherein the support projection and the rotating ring are attached to at least one of the support projection and the rotating ring.

6. The magnetic force unit includes: A magnet; and 3. The high voltage substrate processing apparatus of claim 2, further comprising a coating layer covering said magnet to prevent oxidation of said magnet.

7. The coating layer is 7. The high pressure substrate processing apparatus of claim 6, wherein the coating material includes at least one of nickel, magnesium, titanium, tungsten, and chromium.

8. The magnetic force unit includes: The high pressure substrate processing apparatus of claim 2 including a plurality of magnets forming a circular array about a central axis of the outer door.

9. The plurality of magnets include The high pressure substrate processing apparatus according to claim 8 , wherein the substrates are arranged so as to be classified into a plurality of groups according to a distance away from the central axis.

10. a chamber comprising a housing and a door configured to open and close said housing; a fastening module configured to fasten the housing and the door together to maintain a process gas injected into the chamber at a pressure higher than atmospheric pressure; and a collection module located adjacent to a fastening contact portion between the housing and the door and configured to collect metal particles; The collection module includes: A high-pressure substrate processing apparatus including a magnetic unit having a magnet to which the metal particles are attracted.

11. The fastening module comprises: a support protrusion coupled to the housing; and a locking protrusion coupled to the door and supported by the support protrusion by switching from a first offset relationship with respect to the support protrusion to a second corresponding relationship with the support protrusion; The metal particles are The high pressure substrate processing apparatus of claim 10 , wherein the switching from the first relationship to the second relationship is caused by contact between the support protrusion and the locking protrusion while the support protrusion rotates relative to the locking protrusion.

12. The magnet is The high pressure substrate processing apparatus of claim 10 , further comprising a plurality of magnets forming a circular array about a central axis of the door.

13. The magnetic force unit includes: The high pressure substrate processing apparatus of claim 10, further comprising a coating layer on the magnet, the coating layer being coated with at least one of nickel, magnesium, titanium, tungsten, and chromium.

14. The process gas is The process gas includes an active gas and a protective gas, which is an inert gas. The housing includes: an inner housing configured to contain a substrate to be processed and the process gas; and an outer housing that accommodates at least a portion of the inner housing and is coupled to the inner housing to form, together with the inner housing, a closed space that accommodates the protective gas; The door is The high pressure substrate processing apparatus of claim 10 , configured to close the inner housing.

15. The fastening module comprises: a support protrusion coupled to the outer housing; and a locking projection coupled to the door and adapted to be switched from a first offset relationship relative to the support projection to a second supported relationship on the support projection by rotation of the door; The magnetic force unit includes: The high pressure substrate processing apparatus of claim 14 , further comprising a support protrusion and a locking protrusion configured to trap the metal particles generated by contact between the support protrusion and the locking protrusion during switching from the first relationship to the second relationship.

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