Substrate removal method, substrate polishing method, substrate polishing device, substrate processing device, control device, control method, and control program

Abstract

To remove a substrate from an elastic film.SOLUTION: Provided is a method of removing a substrate absorbed to a first surface of an elastic film included in a substrate holding device of a substrate polishing device. A plurality of concentric pressure chambers are formed in between a top ring body included in the substrate holding device and a second surface of the elastic film. The method includes: a first step of supplying a fixed amount of gas to two or more of the plurality of pressure chambers; and a second step of decompressing the plurality of pressure chambers in order from the outer pressure chamber.SELECTED DRAWING: Figure 13

Description

Technical Field

[0001] The present invention relates to a method for detaching a substrate, a method for polishing a substrate, a substrate polishing apparatus, a substrate processing apparatus, a control apparatus, a control method, and a control program.

Background Art

[0002] In a chemical mechanical polishing (CMP) apparatus, while supplying a polishing liquid to a polishing pad on a rotating polishing table, the substrate is rotated by a polishing head and pressed against the polishing pad to perform polishing. The substrate is held by a membrane (elastic film) provided on the polishing head, and the substrate is pressed against the polishing pad by supplying a fluid pressurized in the pressure chamber of the membrane. When the polishing of the substrate is completed, the polishing head releases the holding of the substrate by the membrane, detaches (releases) the substrate, and delivers it to a transfer device. As such a CMP apparatus, for example, Patent Document 1 is known.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] An object of the present invention is to detach a substrate from an elastic film.

Means for Solving the Problems

[0005] As an example, the following solution means are provided.

[0006] [1] A method for detaching a substrate adsorbed on a first surface of an elastic film included in a substrate holding device of a substrate polishing apparatus, Between the top ring body of the substrate holding device and the second surface of the elastic film, a plurality of concentric pressure chambers are formed. A first step of supplying a fixed amount of gas to two or more of the plurality of pressure chambers to pressurize the elastic film, and a second step of sequentially decompressing the plurality of pressure chambers from the outermost pressure chamber. The method includes these steps.

[0007] [2] The method according to [1], wherein none of the two or more pressure chambers is the outermost pressure chamber.

[0008] [3] The method according to [2], wherein while supplying a fixed amount of gas to the two or more pressure chambers in the first step, the outermost pressure chamber is decompressed in the second step.

[0009] [4] In the first step of the method according to any one of [1] to [3], a fixed amount of gas is supplied to the two or more pressure chambers from a single fixed amount of gas supply device.

[0010] [5] The first step includes opening a first valve provided between each of the two or more pressure chambers and a fixed amount of gas supply device. The second step includes opening a second valve provided between each of the plurality of pressure chambers and a pressure adjusting device. In the second step, when decompressing each of the two or more pressure chambers, first close the first valve and then open the second valve. The method is as described in any one of [1] to [4].

[0011] [6] In the first step, a fixed amount of gas is supplied from a chamber to the two or more pressure chambers. Between the first step and the second step, a step of generating a negative pressure in the chamber is included. In the second step, for the two or more pressure chambers, they are decompressed by connecting the chamber and the two or more pressure chambers. The method is as described in any one of [1] to [5].

[0012] [7] The method according to any one of [1] to [6], further comprising a third step of supplying a fixed amount of gas to one or more of the two or more pressure chambers when the substrate does not detach even if a certain pressure chamber is depressurized in the second step.

[0013] [8] A method of polishing a substrate using a substrate holding device having a top ring body and an elastic film, a first surface of the elastic film is capable of adsorbing the substrate, a plurality of concentric pressure chambers are formed between the top ring body and a second surface of the elastic film, a first step of adsorbing the substrate to the first surface of the elastic film by depressurizing at least one of the plurality of pressure chambers with the adsorbed surface of the substrate in contact with the first surface of the elastic film; a second step of bringing the surface to be polished of the substrate into contact with a polishing member and polishing the surface to be polished of the substrate while pressurizing at least one of the plurality of pressure chambers; a third step of separating the surface to be polished of the substrate from the polishing member and pressurizing the elastic film by supplying a fixed amount of gas to two or more of the plurality of pressure chambers; and a fourth step of sequentially depressurizing the plurality of pressure chambers from an outer pressure chamber to detach the substrate from the first surface of the elastic film.

[0014] [9] In the second step, a pressure adjusting device pressurizes at least one of the plurality of pressure chambers at a first pressure, In the third step, the elastic film is pressurized at a second pressure lower than the first pressure, the method according to [8].

[0015]

[10] In the first step, a pressure adjusting device depressurizes at least one of the plurality of pressure chambers, In the third step, a fixed amount of gas is supplied from a chamber to the two or more pressure chambers, Between the third step and the fourth step, a step of generating a negative pressure in the chamber is included. In the fourth step, for the two or more pressure chambers, the pressure is reduced by connecting the chamber and the two or more pressure chambers. The stress applied to the substrate by the pressure reduction in the fourth step is smaller than the stress applied to the substrate by the pressure reduction in the first step, according to the method described in [8] or [9].

[0016]

[11] A top ring body, An elastic film having a first surface capable of adsorbing a substrate and a second surface forming a plurality of concentric pressure chambers between the top ring body and the first surface. A polishing member for polishing the adsorbed substrate. A metering gas supply device capable of supplying a metering gas to two or more of the plurality of pressure chambers. A first switching means for switching whether or not to communicate the metering gas supply device with each of the two or more pressure chambers. A pressure adjusting device capable of individually controlling the pressures of the plurality of pressure chambers. A second switching means for switching whether or not to communicate the pressure adjusting device with each of the plurality of pressure chambers. A substrate polishing apparatus comprising: a control device for controlling the metering gas supply device, the first switching means, the pressure adjusting device, and the second switching means such that the metering gas supply device supplies a metering gas to the two or more pressure chambers, and then the pressure adjusting device sequentially reduces the pressure of the plurality of pressure chambers from the outer pressure chamber to release the substrate adsorbed on the first surface of the elastic film.

[0017]

[12] The metering gas supply device Has a cylinder And a piston that divides the cylinder into an upper space and a lower space. The substrate polishing apparatus according to

[11] , wherein the metering gas in the lower space of the cylinder is supplied when the piston moves downward.

[0018]

[13] The quantitative gas supply device is the substrate polishing apparatus according to

[11] , which has a constant volume chamber pressurized by the pressure adjusting device.

[0019]

[14] A substrate polishing apparatus according to any one of

[11] to

[13] , A substrate cleaning device for cleaning the substrate polished by the substrate polishing device, A substrate processing apparatus comprising a substrate drying device for drying the substrate cleaned by the substrate cleaning device.

[0020]

[15] A top ring body, An elastic film having a first surface capable of adsorbing a substrate and a second surface forming a plurality of concentric pressure chambers between the top ring body, A polishing member for polishing the adsorbed substrate, A quantitative gas supply device capable of supplying a quantitative gas to two or more of the plurality of pressure chambers, A first switching means for switching whether or not to communicate the quantitative gas supply device with each of the two or more pressure chambers, A pressure adjusting device capable of individually controlling the pressures of the plurality of pressure chambers, A device for controlling a substrate polishing apparatus comprising a second switching means for switching whether or not to communicate the pressure adjusting device with each of the plurality of pressure chambers, A control device that controls the quantitative gas supply device, the first switching means, the pressure adjusting device, and the second switching means so that the quantitative gas supply device supplies a quantitative gas to the two or more pressure chambers in order to detach the substrate adsorbed on the first surface of the elastic film, and then the pressure adjusting device sequentially depressurizes the plurality of pressure chambers from the outer pressure chamber.

[0021]

[16] A top ring body, An elastic film having a first surface capable of adsorbing a substrate and a second surface forming a plurality of concentric pressure chambers between the top ring body, A polishing member for polishing the adsorbed substrate, A metered gas supply device capable of supplying a metered gas to two or more of the plurality of pressure chambers, a first switching means for switching whether or not to communicate the metered gas supply device with each of the two or more pressure chambers, a pressure adjustment device capable of individually controlling the pressures of the plurality of pressure chambers, a second switching means for switching whether or not to communicate the pressure adjustment device with each of the plurality of pressure chambers, and a program for controlling a substrate polishing apparatus including the second switching means, the computer being In order to detach the substrate adsorbed on the first surface of the elastic membrane, the metered gas supply device supplies a metered gas to the two or more pressure chambers, and then the pressure adjustment device reduces the pressure of the plurality of pressure chambers in order from the outer pressure chamber. A control program that functions as means for controlling the metered gas supply device, the first switching means, the pressure adjustment device, and the second switching means.

[0022]

[17] a top ring body, an elastic membrane having a first surface capable of adsorbing a substrate and a second surface forming a plurality of concentric pressure chambers between the top ring body and the top ring body, a polishing member for polishing the adsorbed substrate, a metered gas supply device capable of supplying a metered gas to two or more of the plurality of pressure chambers, a first switching means for switching whether or not to communicate the metered gas supply device with each of the two or more pressure chambers, a pressure adjustment device capable of individually controlling the pressures of the plurality of pressure chambers, a second switching means for switching whether or not to communicate the pressure adjustment device with each of the plurality of pressure chambers, and a method for controlling a substrate polishing apparatus including the second switching means, In order to detach the substrate adsorbed on the first surface of the elastic membrane, the metered gas supply device supplies a metered gas to the two or more pressure chambers, and then the pressure adjustment device reduces the pressure of the plurality of pressure chambers in order from the outer pressure chamber. A control method for controlling the metered gas supply device, the first switching means, the pressure adjustment device, and the second switching means. [Advantages of the Invention]

[0023] The substrate can be detached from the elastic film.

Brief Description of the Drawings

[0024]

Figure 1

Figure 2

Figure 3

Figure 4A1

Figure 4A2

Figure 4B

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12A

Figure 12B

Figure 13

Figure 14

Figure 15

Figure 16

Figure 17

Figure 18

Figure 19

Figure 20

Figure 21

Figure 22

Figure 23

Figure 24

Figure 25

Figure 26

Figure 27

Figure 28

Figure 29

Mode for Carrying Out the Invention

[0025] Hereinafter, embodiments according to the present invention will be specifically described with reference to the drawings.

[0026] (First Embodiment) FIG. 1 is a schematic configuration diagram of a substrate processing apparatus 100. The substrate processing apparatus 100 is, for example, a CMP apparatus, and includes a substantially rectangular housing 1 and a load port 2 disposed adjacent to the housing 1.

[0027] A substrate cassette (not shown) for stocking a plurality of substrates W is placed on the load port 2. Examples of the substrate W include semiconductor wafers. However, the substrate W to be processed is not limited to semiconductor wafers, and may be other types of substrates used in the manufacture of semiconductor devices such as glass substrates and ceramic substrates. Further, a semiconductor film, a metal film, or the like is formed on at least one surface of the substrate W.

[0028] The substrate processing apparatus 100 includes one or more (four in FIG. 1) substrate polishing apparatuses 3a to 3d (which may be collectively referred to as "substrate polishing apparatus 3" when not particularly distinguished), one or more (two in FIG. 1) substrate cleaning apparatuses 4a and 4b (which may be collectively referred to as "substrate cleaning apparatus 4" when not particularly distinguished), and one or more (one in FIG. 1) substrate drying apparatuses 5, and these are disposed inside the housing 1.

[0029] As an example, the substrate polishing apparatuses 3a to 3d are arranged along one side in the longitudinal direction of the housing 1. Further, the substrate cleaning apparatuses 4a and 4b and the substrate drying apparatus 5 are arranged along the other side in the longitudinal direction of the housing 1.

[0030] The substrate polishing apparatus 3 polishes the surface of the substrate W. More specifically, the substrate polishing apparatus 3 supplies slurry onto the substrate W while rotating the substrate W, and polishes the surface of the substrate W by pressing a polishing member (not shown) against the surface of the substrate W. There may be polishing debris and slurry remaining on the polished substrate W. A detailed configuration example of the substrate polishing apparatus 3 will be described later.

[0031] The substrate cleaning apparatus 4 cleans the surface of the polished substrate W. More specifically, the substrate cleaning apparatus 4 cleans the surface of the substrate W by pressing a substrate cleaning tool (not shown in FIG. 1) against the surface of the substrate W while rotating the substrate W.

[0032] The substrate drying device 5 dries the surface of the substrate W after cleaning. For example, the substrate drying device 5 is a spin drying device, which ejects isopropyl alcohol vapor from an injection nozzle onto the rotating substrate W to dry the substrate W, while rotating the substrate W at high speed and drying the substrate W by centrifugal force.

[0033] In addition, the substrate processing apparatus 100 includes substrate transfer devices 6a to 6d (which may be collectively referred to as "substrate transfer device 6" when not particularly distinguished). These are arranged inside the housing 1.

[0034] The substrate transfer device 6a is arranged adjacent to the load port 2. The substrate transfer device 6a receives the substrate W before processing from the load port 2 and passes it to the substrate transfer device 6b, or receives the substrate W after processing from the substrate transfer device 6b.

[0035] The substrate transfer device 6b extends in the longitudinal direction at the central part of the housing 1. The substrate transfer device 6b receives the substrate W before processing from the substrate transfer device 6a and conveys it to any one of the substrate polishing devices 3a to 3d, or receives the substrate W after polishing from the substrate polishing devices 3a to 3d and passes it to the substrate transfer device 6c, or receives the substrate W after drying from the substrate transfer device 6d and passes it to the substrate transfer device 6a.

[0036] The substrate transfer device 6c is arranged between the substrate cleaning devices 4a and 4b. The substrate transfer device 6c receives the substrate W after polishing from the substrate transfer device 6b and conveys it to any one of the substrate cleaning devices 4a and 4b, or receives the substrate W after cleaning from the substrate cleaning device 4a and conveys it to the substrate cleaning device 4b.

[0037] The substrate transfer device 6d is arranged between the substrate cleaning device 4b and the substrate drying device 5. The substrate transfer device 6d receives the substrate W after cleaning from the substrate cleaning device 4b and conveys it to the substrate drying device 5, or receives the substrate W after drying from the substrate drying device 5 and passes it to the substrate transfer device 6b.

[0038] Note that the arrangements of the substrate polishing apparatus 3, the substrate cleaning apparatus 4, the substrate drying apparatus 5, and the substrate transfer apparatus 6 are merely illustrative. It suffices to provide one or more substrate transfer apparatuses 6 capable of transferring the substrate W in this order: the substrate polishing apparatus 3, the substrate cleaning apparatus 4, and the substrate drying apparatus 5.

[0039] FIG. 2 is a schematic perspective view of the substrate polishing apparatus 3. The substrate polishing apparatus 3 includes a top ring 10 (substrate holding device) that holds the substrate W to be polished, a top ring shaft 20 whose lower end is connected to the top ring 10, a polishing table 30 provided with a polishing pad 30a (polishing member) on its upper surface, and a nozzle 40 that supplies slurry. The outline of the operation of this substrate polishing apparatus 3 is as follows.

[0040] The top ring 10 receives the substrate W from the substrate transfer apparatus (FIG. 1). Then, an elevating mechanism (not shown) lowers the top ring shaft 20. As a result, the lower surface of the substrate W comes into contact with the polishing pad 30a of the polishing table 30. Then, the nozzle 40 supplies slurry onto the polishing pad 30a. Further, a motor (not shown) rotates the top ring shaft 20, and another motor rotates the polishing table 30. As a result, with the lower surface of the substrate W in contact with the polishing pad 30a, the substrate W and the polishing table 30 rotate, and the substrate W is polished.

[0041] FIG. 3 is a diagram schematically showing a schematic cross-section of the top ring 10. The top ring 10 is composed of a top ring body 11 (also referred to as a carrier or a base plate), a retainer ring 12, a flexible membrane 13 (elastic film), a metered gas supply device 14, a pressure adjustment device 15, a control device 16, and the like. Note that the metered gas supply device 14, the pressure adjustment device 15, and / or the control device 16 may be components that make up the top ring 10, or they may be separate devices from the top ring 10.

[0042] The retainer ring 12 is an annular member provided on the outer peripheral portion of the top ring body 11. The periphery of the held substrate W is surrounded by the retainer ring 12, so that the substrate W does not jump out of the top ring 10 during polishing. Note that the retainer ring 12 may be a single member, or may have a double-ring structure composed of an inner ring and an outer ring provided outside the inner ring.

[0043] The membrane 13 is circular and can adsorb and hold the substrate W on its lower surface. The membrane 13 is attached below the top ring body 11 and inside the retainer ring 12. Specifically, the membrane 13 is provided with a plurality of partition walls facing upward, and these partition walls are fixed to the top ring body 11. A plurality of pressure chambers separated by each partition wall are formed between the top ring body 11 and the upper surface of the membrane 13. In the specific example of FIG. 3, a circular pressure chamber A1 is formed at the center, and four annular pressure chambers A2 to A5 are formed outside it. The central positions of these pressure chambers are common.

[0044] One end of each of the pipes L1 to L5 communicates with the pressure chambers A1 to A5, respectively. The other end of the pipe L1 branches, one is connected to the metered gas supply device 14 via the valve V11, and the other is connected to the pressure regulator 15 via the valve V21. The same applies to the pipes L2 and L4. The pipes L3 and L5 are not connected to the metered gas supply device 14 and are connected only to the pressure regulator 15 via the valves L23 and L25, respectively. However, the pipes L3 and L5 may also be connected to the pressure regulator 15 in the same manner as the pipes L1, L2, and L4.

[0045] The metered gas supply device 14 can supply metered gas to the pressure chambers A1, A2, and A4 via the pipes L1, L2, and L4 in combination with the valves V11, V12, and V14. More specifically, the metered gas supply device 14 has a chamber 141, and supplies metered gas from this chamber 141. Note that the metered gas supply device 14 only needs to be able to supply metered gas to at least two of the pressure chambers A1 to A5, and thus does not have to communicate with the other pressure chambers. A specific configuration example of the metered gas supply device 14 will be described later.

[0046] The pressure adjustment device 15 can individually adjust the pressures in the pressure chambers A1 to A5 in combination with the valves V21 to V25. That is, the pressure adjustment device 15 can pressurize, depressurize, or open to the atmosphere the pressure chambers A1 to A5 via the pipes L1 to L5 according to the control of the control device 16.

[0047] The control device 16 controls the valves V11, V12, V14, V21 to V25, the metered gas supply device 14, and the pressure adjustment device 15. Each function by the control device 16 may be realized by a processor executing a predetermined program. Note that the valves V11, V12, V14 can be said to be means for switching whether to communicate the metered gas supply device 14 with the pressure chambers A1, A2, A4. Also, the valves V21 to V25 can be said to be means for switching whether to communicate the pressure adjustment device 15 with the pressure chambers A1 to A5.

[0048] FIG. 4A1 and FIG. 4A2 are schematic diagrams showing a configuration example of the metered gas supply device 14. This metered gas supply device 14 includes a cylinder 21 as a chamber 141, a piston 22, a piston rod 23, a weight 24, and a vacuum source 25.

[0049] The cylinder 21 extends vertically in a cylindrical shape and has a hollow interior. The outer periphery of the piston 22 is in contact with the inner surface of the cylinder 21 and can move up and down. The piston rod 23 extends in the vertical direction and passes through an opening O3 provided on the upper surface of the cylinder 21. And a piston 22 is connected to the lower end of the piston rod 23, and a weight 24 is fixed to the upper end.

[0050] The interior of the cylinder 21 is divided into a lower space B1 and an upper space B2 by the piston 22. Since the outer periphery of the piston 22 is in contact with the inner surface of the cylinder 21, there is almost no gas flow between the lower space B1 and the upper space B2.

[0051] An opening O1 is provided at a position corresponding to the lower space B1 of the cylinder 21. A pipe L11 is connected to this opening O1. The pipe L11 is connected to the pipes L1, L2, L4 (see FIG. 3) via V11, V12, V14 respectively. A valve V0 is provided at the branch destination of the pipe L11, and by opening the valve V0, the lower space B1 can be opened to the atmosphere.

[0052] Also, an opening O2 is provided at a position corresponding to the upper space B2 of the cylinder 21. A pipe L12 is connected to this opening O2. A vacuum source 25 is connected to the pipe L12, and the upper space B2 can be depressurized or opened to the atmosphere via the pipe L12.

[0053] When the vacuum source 25 depressurizes the upper space B2 with the valve V0 open, the cylinder 21 rises and a fixed amount of gas is stored in the lower space B1 (FIG. 4A1). Then, when the upper space B2 is opened to the atmosphere with the valve V0 closed, the weight 24 moves downward due to gravity, and a fixed amount of gas in the lower space B1 is supplied from the pipe L11 (FIG. 4A2). Note that the valve V0 and the vacuum source 25 are controlled by the control device 16 in FIG. 3. Note that even without providing the weight 24, for example, it is also possible to supply a fixed amount of gas by pressurizing the piston 22 downward from the vacuum source 25. In any case, when the piston 22 moves downward, a fixed amount of gas in the lower space B1 is supplied.

[0054] FIG. 4B is a schematic diagram showing another configuration example of the fixed amount gas supply device 14. This fixed amount gas supply device 14 has a constant volume chamber 31 as a chamber 141 and a pressure adjustment device 32. Note that it is desirable that the pressure adjustment device 32 is shared with the pressure adjustment device 15 shown in FIG. 3.

[0055] An opening O4 is provided in the constant volume chamber 31 and is connected to the pressure adjustment device 32 via a valve V1. Also, an opening O5 is provided in the constant volume chamber 31, and a pipe L12 connected to the pipes L1, L2, L4 (see FIG. 3) via a valve V2 is connected.

[0056] Note that the valves V1, V2 and the pressure regulating device 32 are controlled by the control device 16 in FIG. 3. With the valve V1 open and the valve V2 closed, the pressure regulating device 32 pressurizes the constant volume chamber 31 to about 50 hPa, and then closes the valve V1, so that a high-pressure fixed amount of gas is stored in the constant volume chamber 31. Then, with the valve V1 closed and the valve V2 open, the fixed amount of gas in the constant volume chamber 31 is supplied from the pipe L12. A needle valve V3 may be provided in the pipe L12 to reduce the flow rate of the supplied gas.

[0057] FIG. 5 is a flowchart showing the processing steps of the substrate polishing apparatus 3. Before performing substrate polishing, that is, in the standby state where the top ring 10 does not hold the substrate W, as shown in FIG. 6, the valves V11, V12, V14 are closed, the valves V21 to V25 are open, and the pressure regulating device 15 is open to the atmosphere. Therefore, the pressure chambers A1 to A5 are open to the atmosphere.

[0058] First, the substrate polishing apparatus 3 sucks and holds the substrate W conveyed by the substrate transfer device 6 (FIG. 1) on the membrane 13 of the top ring 10 (step S1). Specifically, as shown in FIG. 7, with the upper surface of the substrate W in contact with the lower surface of the membrane 13, at least one of the pressure chambers A1 to A5 (pressure chambers A1 to A4 in the example of FIG. 7) is depressurized to about -500 hPa from the pressure regulating device 15. Thereby, the substrate W is adsorbed to the lower surface of the membrane 13.

[0059] Next, the substrate polishing apparatus 3 lowers the adsorbed and held substrate W and polishes the substrate by bringing the lower surface of the substrate W into contact with the polishing pad 30a of the polishing table 30 (step S2). Specifically, as shown in FIG. 8, at least one of the pressure chambers A1 to A5 (pressure chambers A1 to A5 in the example of FIG. 8) is pressurized to about 50 to 500 hPa from the pressure regulating device 15. Thereby, the lower surface of the substrate W is polished.

[0060] Then, the substrate polishing apparatus 3 detaches the substrate W adsorbed to the membrane 13 (step S3).

[0061] As an example of a method for detaching the substrate W, it is conceivable to pressurize the pressure chambers A1 to A5 from the pressure adjusting device 15. However, in such a method, the pressure from the pressure adjusting device 15 is too large, and a large stress is applied to the substrate W, and in some cases, the substrate W may be damaged.

[0062] As another example, it is conceivable to detach the substrate W by injecting nitrogen gas or water from the side of the substrate W. However, in such a method, the posture of the substrate W falling due to the injection becomes unstable, and the substrate W may be damaged during detachment.

[0063] Therefore, in the present embodiment, the substrate W adsorbed on the membrane 13 is detached as follows.

[0064] First, the detachment method according to the present embodiment will be schematically described. FIG. 9 is a schematic diagram for explaining the state after polishing and before the start of detachment. The upper surface of the substrate W is adsorbed to the membrane 13. However, the lower surface of the substrate W is separated from the polishing table 30 (FIG. 8).

[0065] FIG. 10 is a schematic diagram for explaining the state at the start of detachment. A fixed amount of gas is supplied from the fixed amount gas supply device 14 to two or more of the pressure chambers A1 to A5, and the membrane 13 is pressurized to about 1 to 3 hPa. This pressure is lower than the pressure during substrate polishing (step S2 in FIG. 5). By supplying an appropriate amount of gas from a single fixed amount gas supply device 14 to two or more of the pressure chambers A1 to A5, the same pressure can be applied to these pressure chambers, and it is possible to suppress a large stress from being applied to the substrate W. As shown in the figure, the end of the substrate W is peeled off from the membrane 13, but the substrate W still remains adsorbed to the membrane 13.

[0066] In this step, one or more arbitrary pressure chambers A1 to A5 (in some cases, all of the pressure chambers A1 to A5) may be pressurized, but the outermost pressure chamber A5 does not have to be pressurized. This is because the end of the substrate W is in contact with the atmosphere and is easily peeled off from the membrane 13. Then, the pressure chambers A1 to A5 are depressurized in the order of the outer pressure chambers A5 to A1.

[0067] FIG. 11 is a schematic diagram for explaining the state where the pressure chamber A5 is depressurized. By depressurizing the pressure chamber A5, the region (outer peripheral portion) of the membrane 13 corresponding to the pressure chamber A5 is attracted to the top ring body 11. As a result, the substrate W is further peeled off from the membrane 13.

[0068] At this time, the pressure in the pressure chamber A5 is about -50 kPa to -10 kPa. This pressure may be about the same as the pressure during substrate adsorption (step S1 in FIG. 5), but considering the case where the membrane 13 is attached to the substrate W, it is desirable to suppress the stress of the substrate W by low vacuum.

[0069] FIG. 12A is a schematic diagram for explaining the state where the pressure chamber A4 is further depressurized. By depressurizing the pressure chamber A4, the regions of the membrane 13 corresponding to the pressure chambers A5 and A4 are attracted to the top ring body 11. As a result, the substrate W is further peeled off from the membrane 13. Then, the area of the substrate W adsorbed to the membrane 13 becomes sufficiently small, and the substrate W detaches from the membrane 13 and falls by its own weight (FIG. 12B).

[0070] If the substrate W does not detach from the membrane 13 even when the pressure chamber A4 is depressurized, the pressure chambers A3 to A1 may be depressurized in order until it detaches.

[0071] In FIG. 10, when the outermost pressure chamber A5 is not pressurized, the pressure chamber A5 may be depressurized while supplying a fixed amount of gas to any one or more of the pressure chambers A1 to A4.

[0072] According to such a method, the stress applied to the substrate W can be suppressed, and it is also not necessary to inject nitrogen gas or water into the substrate W. This will be described more specifically below.

[0073] FIG. 13 is a flowchart showing a process for detaching the substrate W adsorbed to the membrane 13. It is assumed that the polishing of the substrate W is completed and the lower surface of the substrate W is separated from the polishing table 30. Also, it is assumed that the metered gas supply device 14 is ready to supply metered gas. For example, in the case of the metered gas supply device 14 shown in FIG. 4A1, metered gas is stored in the lower space B1 and the valve V0 is closed. In the case of the metered gas supply device 14 shown in FIG. 4B, high-pressure metered gas is stored in the constant volume chamber 31 and the valves V1, V2 are closed.

[0074] First, as shown in FIG. 14, the valves V11, V12, V14 are opened and the valves V21 to V24 are closed, and metered gas is supplied from the metered gas supply device 14 to the pressure chambers A1, A2, A4. As a specific example, the upper space B2 of the metered gas supply device 14 shown in FIG. 4A1 is opened to the atmosphere. Alternatively, the valve V2 of the metered gas supply device 14 shown in FIG. 4B is opened. Thereby, the membrane 13 is pressurized. At the same time as or before and after this, the valve V25 is opened and the pressure regulator 15 decompresses the outermost pressure chamber A5 (step S11).

[0075] Thereby, it is expected that at least the outer peripheral portion of the substrate W is peeled off from the membrane 13.

[0076] Subsequently, as shown in FIG. 15, the valve V14 is closed (step S12a), and then the valve V24 is opened and the pressure regulator 15 decompresses the pressure chamber A4, which is one inside of the pressure chamber A5 (step S12b). The reason for this order is that if the pressure chamber A4 is decompressed with the valve V14 open, the other pressure chambers A1 to A3 will also be decompressed at the same time. Note that the metered gas supply device 14 continues to pressurize the pressure chambers A1 and A2.

[0077] Thereby, if the substrate W has been detached from the membrane 13 (YES in step S13), the detachment process ends. Even if it does not detach (NO in step S13), it is expected that at least a part of the inside of the substrate W in addition to the outer peripheral portion is peeled off from the membrane 13.

[0078] When the substrate W does not detach from the membrane 13, as shown in FIG. 16, the valve V23 is opened, and the pressure regulating device 15 decompresses the pressure chamber A3 inside one of the pressure chambers A4 (step S14). Note that the metered gas supply device 14 continues to pressurize the pressure chambers A1 and A2.

[0079] Thereby, if the substrate W has detached from the membrane 13 (YES in step S15), the detachment process ends. Even if it does not detach (NO in step S15), it is expected that at least a part of the further inner side of the substrate W will be peeled off from the membrane 13.

[0080] When the substrate W does not detach from the membrane 13, as shown in FIG. 17, the valve V12 is closed (step S16a), and then the valve V22 is opened, and the pressure regulating device 15 decompresses the pressure chamber A2 inside one of the pressure chambers A3 (step S16b). Note that the metered gas supply device 14 continues to pressurize the pressure chamber A1.

[0081] Thereby, if the substrate W has detached from the membrane 13 (YES in step S17), the detachment process ends. Even if it does not detach (NO in step S17), it is expected that at least a part of the further inner side of the substrate W will be peeled off from the membrane 13.

[0082] When the substrate W does not detach from the membrane 13, as shown in FIG. 18, the valve V11 is closed (step S18a), and then the valve V21 is opened, and the pressure regulating device 15 decompresses the pressure chamber A1 inside one of the pressure chambers A2 (step S18b). Thereby, the inner side of the substrate W is further peeled off from the membrane 13, and the substrate W detaches from the membrane 13.

[0083] The opening and closing of the valves V11, V12, V14, V21 to V25, and the operations of the metered gas supply device 14 and the pressure regulating device 15 described above may be controlled by the control device 16.

[0084] Thus, in this embodiment, the membrane 13 is pressurized by supplying a fixed amount of gas from the fixed amount gas supply device 14. Therefore, the substrate W can be detached from the membrane 13 without applying a large stress to the substrate W and without the need to inject nitrogen gas or water onto the substrate W.

[0085] (Second Embodiment) In the first embodiment described above, the pressure reduction of the membrane 13 (steps S12b, S14, and S16b in FIG. 13) was performed by the pressure adjustment device 15. In contrast, in the second embodiment described below, the fixed amount gas supply device 14 is used as a negative pressure generation source to reduce the pressure of the membrane 13. Hereinafter, descriptions common to the first embodiment will be omitted or simplified, and the differences will be mainly described.

[0086] As described in the first embodiment, the pressure adjustment device 15 reduces the pressure in the pressure chamber to about -500 hPa in order to adsorb and hold the substrate (step S1 in FIG. 5). This pressure may possibly apply stress to the substrate W in some cases. In contrast, when the fixed amount gas supply device 14 is used as a negative pressure generation source, the pressure chamber is only reduced to about -1 to 3 hPa. Therefore, the stress on the substrate W can be further reduced.

[0087] In order to use the fixed amount gas supply device 14 as a negative pressure generation source, a negative pressure may be generated in the chamber 141.

[0088] For example, in the fixed amount gas supply device 14 shown in FIGS. 4A1 and 4A2, when the valves V11 to V14 provided in the pipes L1 to L4 connected to the valve V0 and the pipe L11 are closed and the vacuum generation source 25 reduces the pressure in the upper space B2 of the cylinder 21, a negative pressure is generated in the lower space B1 of the cylinder 21.

[0089] Alternatively, in the fixed amount gas supply device 14 shown in FIG. 4B, when the valve V2 is closed and the valve V1 is open, and the pressure adjustment device 32 reduces the pressure in the constant volume chamber 31, a negative pressure is generated in the constant volume chamber 31.

[0090] FIG. 19 is a flowchart showing the steps for detaching the substrate W adsorbed to the membrane 13. It is assumed that the polishing of the substrate W is completed and the lower surface of the substrate W is separated from the polishing table 30. Also, it is assumed that the metered gas supply device 14 is ready to supply the metered gas. For example, in the case of the metered gas supply device 14 shown in FIG. 4A1, the metered gas is stored in the lower space B1 and the valve V0 is closed. In the case of the metered gas supply device 14 shown in FIG. 4B, the high-pressure metered gas is stored in the constant volume chamber 31 and the valves V1 and V2 are closed.

[0091] First, as shown in FIG. 20, valves V11, V12, and V14 are opened and valves V21 to V24 are closed, and the metered gas is supplied from the metered gas supply device 14 to the pressure chambers A1, A2, and A4. Thereby, the membrane 13 is pressurized. At the same time or before and after that, valve V25 is opened and the pressure adjusting device 15 depressurizes the outermost pressure chamber A5 (step S21).

[0092] Thereby, it is expected that at least the outer peripheral portion of the substrate W is peeled off from the membrane 13.

[0093] Subsequently, as shown in FIG. 21, valves V11, V12, and V14 are closed (step S22). Thereby, the pressure chambers A1, A2, and A4 are all blocked from the metered gas supply device 14. Then, a negative pressure is generated in the chamber 141 of the metered gas supply device 14 (step S23). Thereby, the metered gas supply device 14 functions as a negative pressure generating source.

[0094] Next, as shown in FIG. 22, valve V14 is opened. Thereby, the pressure chamber A4 and the metered gas supply device 14 that has become a negative pressure generating source communicate with each other, and the pressure chamber A4 is depressurized (step S24). Even when valve V14 is opened, since valves V11 and V12 are closed, the pressures in the pressure chambers A1 and A2 hardly change.

[0095] Accordingly, if the substrate W has detached from the membrane 13 (YES in step S25), the detachment process ends. Even if it does not detach (NO in step S25), it is expected that at least a part of the inner side in addition to the outer peripheral portion of the substrate W will be peeled off from the membrane 13.

[0096] When the substrate W does not detach from the membrane 13 (NO in step S25), as shown in FIG. 23, the valve V23 is opened, and the pressure regulating device 15 reduces the pressure in the pressure chamber A3 inside one of the pressure chambers A4 (step S26). In this way, the pressure reduction of the pressure chamber A3 to which the fixed - quantity gas supply device 14 is not connected is performed by the pressure regulating device 15.

[0097] Accordingly, if the substrate W has detached from the membrane 13 (YES in step S27), the detachment process ends. Even if it does not detach (NO in step S27), it is expected that at least a part of the inner side in addition to the outer peripheral portion of the substrate W will be peeled off from the membrane 13.

[0098] When the substrate W does not detach from the membrane 13 (NO in step S27), as shown in FIG. 24, the valve V12 is opened to communicate the pressure chamber A2 with the fixed - quantity gas supply device 14, and the pressure chamber A2 is depressurized (step S28). Note that even when the valve V12 is opened, since the valve V1 is closed, the pressure in the pressure chamber A1 hardly fluctuates.

[0099] Accordingly, if the substrate W has detached from the membrane 13 (YES in step S29), the detachment process ends. Even if it does not detach (NO in step S29), it is expected that at least a part of the inner side in addition to the outer peripheral portion of the substrate W will be peeled off from the membrane 13.

[0100] When the substrate W does not detach from the membrane 13 (NO in step S29), as shown in FIG. 25, the valve V11 is opened to communicate the pressure chamber A1 with the fixed - quantity gas supply device 14, and the pressure chamber A1 is depressurized (step S2A). Thereby, the inner side of the substrate W is further peeled off from the membrane 13, and the substrate W detaches from the membrane 13.

[0101] Thus, in this embodiment, the pressure chamber to which the metering gas supply device 14 is connected is depressurized using the metering gas supply device 14 as a negative pressure generation source instead of the pressure regulating device 15. Therefore, the stress on the substrate W can be further reduced.

[0102] In this embodiment, pressurization (step S21 in FIG. 18) and depressurization (steps S24, S28, S2A in the same figure) are performed using one metering gas supply device 14. On the other hand, as shown in FIG. 26, a metering gas supply device 14' for depressurization may be provided separately from the metering gas supply device 14 for pressurization. When the metering gas supply device 14 for pressurization is connected only to the pressure chambers A1, A2, A4, the metering gas supply device 14' for depressurization may also be connected only to the pressure chambers A1, A2, A4, but may also be connected to other pressure chambers. In particular, the metering gas supply device 14' for depressurization may also be connected to the pressure chamber A3, and the depressurization may also be performed from the metering gas supply device 14'. By providing them separately, it becomes possible to set appropriate pressures respectively. In particular, in the case of the metering gas supply device 14 (FIGS. 4A1 and 4A2) using the cylinder 21, the generated pressure changes depending on the volume of the cylinder 21, so the volumes of the cylinders 21 can be optimized respectively.

[0103] (Third Embodiment) As described in the first and second embodiments, when depressurizing in order from the outer pressure chambers, the substrate W may not come off (for example, NO in step S17 of FIG. 13, NO in step S29 of FIG. 18). The third embodiment to be described below is to perform re-pressurization from the metering gas supply device 14 when the substrate W does not come off even when a certain pressure chamber is depressurized. Hereinafter, descriptions common to the first and second embodiments are omitted or simplified, and the differences will be mainly described.

[0104] FIG. 27 is a flowchart showing a process for detaching the substrate W adsorbed to the membrane 13. After steps S11 to S16a in FIG. 13 or steps S21 to S27 in FIG. 18, the pressure chamber A2 was pressurized (steps S16b, S28), but it is assumed that the substrate W did not detach from the membrane 13 (NO in steps S17, S29).

[0105] In this case, as shown in FIG. 28, valves V11, V12, and V14 are closed (step S31).

[0106] Then, the metered gas supply device 14 prepares to supply metered gas (step S32). For example, in the case of the metered gas supply device 14 shown in FIGS. 4A1 and 4A2, the valve V0 is opened and the vacuum source 25 decompresses the upper space B2. As a result, the cylinder 22 rises. Thereafter, by closing the valve V0, metered gas is stored in the lower space B1. In the case of the metered gas supply device 14 shown in FIG. 4B, the valve V1 is opened and the valve V2 is closed, and the pressure regulating device 32 pressurizes the constant volume chamber 31. Thereafter, by closing the valve V1, metered gas is stored in the constant volume chamber 31.

[0107] Next, as shown in FIG. 29, the pressure chamber A1 is pressurized with the valve V11 open (step S33). As a result, the center of the membrane 13 bulges downward, and the substrate W detaches from the membrane 13.

[0108] Thus, in the present embodiment, when the substrate W does not detach from the membrane 13 even when a certain pressure chamber is decompressed, metered gas is supplied to repressurize the membrane 13. Thereby, the substrate W can be surely detached from the membrane 13.

[0109] It is desirable that the pressure chamber A1 in the center is pressurized in step S33, but other pressure chambers may also be used.

[0110] Any part or all of each functional unit described in this specification may be realized by a program. The program mentioned in this specification may be non-temporarily recorded on a computer-readable recording medium and distributed, or may be distributed via a communication line (including wireless communication) such as the Internet, or may be distributed in a state installed on any terminal.

[0111] Based on the above description, those skilled in the art may be able to conceive of additional effects and various modifications of the present invention, but the aspects of the present invention are not limited to the individual embodiments described above. For example, an invention that extracts only a part of each embodiment or an invention that combines a plurality of embodiments is of course assumed. Various additions, changes, and partial deletions are possible without departing from the conceptual ideas and spirit of the present invention derived from the content defined in the claims and their equivalents.

[0112] For example, what is described as one device (or member, the same hereinafter) in this specification (including what is depicted as one device in the drawings) may be realized by a plurality of devices. Conversely, what is described as a plurality of devices in this specification (including what is depicted as a plurality of devices in the drawings) may be realized by one device. Or, part or all of the means and functions included in a certain device may be included in other devices.

[0113] Also, not all of the matters described in this specification are essential requirements. In particular, matters described in this specification but not described in the claims can be regarded as arbitrary additional matters.

[0114] Also, the term "means" in this specification and the claims means hardware (or functions realized by hardware) in itself, unless otherwise specified, and does not include humans (or human mental activities).

[0115] It should be noted that the applicant of the present application only knows the publicly known inventions described in the documents in the "Prior Art Documents" column of this specification, and it should also be noted that the present invention is not necessarily intended to solve the problems in the publicly known inventions of the same documents. The problems to be solved by the present invention should be determined in consideration of the entire specification. For example, in this specification, when there is a description that a specific configuration exhibits a predetermined effect, it can also be said that the problems that are the opposite of the predetermined effect are solved. However, it is not necessarily the intention that such a specific configuration is an essential requirement.

Explanation of Reference Numerals

[0116] 100 Substrate processing apparatus 1 Housing 2 Load port 3, 3a~3d Substrate polishing apparatus 4, 4a, 4b Substrate cleaning apparatus 5 Substrate drying apparatus 6, 6a~6d Substrate transfer apparatus 10 Top ring 11 Top ring body 12 Retainer ring 13 Membrane 14 Quantitative gas supply apparatus 141 Chamber 15 Pressure adjustment apparatus 16 Control apparatus 20 Top ring shaft 21 Cylinder 22 Piston 23 Piston rod 24 Hammer 25 Vacuum source 30 Polishing table 31 Constant volume chamber 32 Pressure and volume adjustment apparatus 30a Polishing pad 40 Nozzle A1~A5 Pressure chamber

Claims

1. A method for detaching a substrate adsorbed on a first surface of an elastic film of a substrate holding device of a substrate polishing apparatus, comprising: A plurality of concentric pressure chambers are formed between a top ring body of the substrate holding device and a second surface of the elastic film; A first step of supplying a fixed amount of gas to two or more of the plurality of pressure chambers to pressurize the elastic film; A second step of sequentially depressurizing the plurality of pressure chambers from an outer pressure chamber; and a method including the same.

2. The method according to claim 1, wherein none of the two or more pressure chambers is the outermost pressure chamber.

3. The method according to claim 2, wherein the outermost pressure chamber is depressurized in the second step while supplying a fixed amount of gas to the two or more pressure chambers in the first step.

4. The method according to claim 1 or 2, wherein in the first step, a fixed amount of gas is supplied to the two or more pressure chambers from a single fixed amount of gas supply device.

5. The first step includes opening a first valve provided between each of the two or more pressure chambers and a fixed amount of gas supply device; The second step includes opening a second valve provided between each of the plurality of pressure chambers and a pressure adjusting device; The method according to claim 1 or 2, wherein in the second step, when each of the two or more pressure chambers is depressurized, first the first valve is closed, and then the second valve is opened.

6. In the first step, a fixed amount of gas is supplied from a chamber to the two or more pressure chambers; Including a step of generating a negative pressure in the chamber between the first step and the second step; The method according to claim 1 or 2, wherein in the second step, for the two or more pressure chambers, the pressure is reduced by connecting the chamber and the two or more pressure chambers.

7. The method according to claim 1 or 2, wherein in the second step, when the substrate does not detach even when a certain pressure chamber is depressurized, a third step of supplying a fixed amount of gas to one or more of the two or more pressure chambers is included.

8. A method for polishing a substrate using a substrate holding device having a top ring body and an elastic film, comprising: The first surface of the elastic film can adsorb the substrate; A plurality of concentric pressure chambers are formed between the top ring body and a second surface of the elastic film; A first step of adsorbing the substrate on the first surface of the elastic film by depressurizing at least one of the plurality of pressure chambers in a state where the adsorbed surface of the substrate is in contact with the first surface of the elastic film; A second step of bringing the polished surface of the substrate into contact with a polishing member and polishing the polished surface of the substrate while pressurizing at least one of the plurality of pressure chambers; A third step of separating the polished surface of the substrate from the polishing member and pressurizing the elastic film by supplying a fixed amount of gas to two or more of the plurality of pressure chambers; A method including a fourth step of sequentially depressurizing the plurality of pressure chambers from an outer pressure chamber to separate the substrate from the first surface of the elastic film.

9. In the second step, a pressure adjustment device pressurizes at least one of the plurality of pressure chambers at a first pressure, In the third step, the elastic film is pressurized at a second pressure lower than the first pressure, The method according to claim 8.

10. In the first step, a pressure adjustment device depressurizes at least one of the plurality of pressure chambers, In the third step, a fixed amount of gas is supplied from the chamber to the two or more pressure chambers, Including a step of generating a negative pressure in the chamber between the third step and the fourth step, In the fourth step, for the two or more pressure chambers, depressurization is performed by connecting the chamber and the two or more pressure chambers, The stress applied to the substrate by the depressurization in the fourth step is smaller than the stress applied to the substrate by the depressurization in the first step, The method according to claim 8 or 9.

11. A top ring body, An elastic film having a first surface capable of adsorbing a substrate and a second surface forming a plurality of concentric pressure chambers between the top ring body, A polishing member for polishing the adsorbed substrate, A fixed amount gas supply device capable of supplying a fixed amount of gas to two or more of the plurality of pressure chambers, First switching means for switching whether or not to communicate the fixed amount gas supply device with each of the two or more pressure chambers, A pressure adjustment device capable of individually controlling the pressures of the plurality of pressure chambers, Second switching means for switching whether or not to communicate the pressure adjustment device with each of the plurality of pressure chambers, A control device for controlling the fixed amount gas supply device, the first switching means, the pressure adjustment device, and the second switching means so that the fixed amount gas supply device supplies a fixed amount of gas to the two or more pressure chambers and then the pressure adjustment device sequentially depressurizes the plurality of pressure chambers from an outer pressure chamber to detach the substrate adsorbed on the first surface of the elastic film. A substrate polishing apparatus comprising:

12. The fixed amount gas supply device, A cylinder, A piston that divides the cylinder into an upper space and a lower space, The substrate polishing apparatus according to claim 11, wherein the quantitative gas in the lower space of the cylinder is supplied when the piston moves downward.

13. The substrate polishing apparatus according to claim 11, wherein the quantitative gas supply device has a constant volume chamber pressurized by the pressure adjustment device.

14. The substrate polishing apparatus according to any one of claims 11 to 13, A substrate cleaning device for cleaning the substrate polished by the substrate polishing apparatus, A substrate processing apparatus comprising a substrate drying device for drying the substrate cleaned by the substrate cleaning device.

15. A top ring body, An elastic film having a first surface capable of adsorbing a substrate and a second surface that forms a plurality of concentric pressure chambers between the top ring body, A polishing member for polishing the adsorbed substrate, A quantitative gas supply device capable of supplying quantitative gas to two or more of the plurality of pressure chambers, A first switching means for switching whether or not to communicate the quantitative gas supply device with each of the two or more pressure chambers, A pressure adjustment device capable of individually controlling the pressures of the plurality of pressure chambers, A control device for controlling a substrate polishing apparatus comprising a second switching means for switching whether or not to communicate the pressure adjustment device with each of the plurality of pressure chambers, wherein In order to detach the substrate adsorbed on the first surface of the elastic film, the quantitative gas supply device supplies quantitative gas to the two or more pressure chambers, and then the pressure adjustment device sequentially depressurizes the plurality of pressure chambers from the outer pressure chamber, the quantitative gas supply device, the first switching means, the pressure adjustment device and the second switching means are controlled.

16. A top ring body, An elastic film having a first surface capable of adsorbing a substrate and a second surface that forms a plurality of concentric pressure chambers between the top ring body, A polishing member for polishing the adsorbed substrate, A quantitative gas supply device capable of supplying quantitative gas to two or more of the plurality of pressure chambers, A first switching means for switching whether or not to communicate the quantitative gas supply device with each of the two or more pressure chambers, A pressure adjustment device capable of individually controlling the pressures of the plurality of pressure chambers, A program for controlling a substrate polishing apparatus comprising a second switching means for switching whether or not to communicate the pressure adjustment device with each of the plurality of pressure chambers, causing a computer to A control program that functions as a means for controlling the metering gas supply device, the first switching means, the pressure adjustment device, and the second switching means so that the metering gas supply device supplies metering gas to the two or more pressure chambers, and then the pressure adjustment device reduces the pressure of the plurality of pressure chambers in order from the outer pressure chamber to detach the substrate adsorbed on the first surface of the elastic membrane.

17. A top ring body, An elastic membrane having a first surface capable of adsorbing a substrate and a second surface forming a plurality of concentric pressure chambers between the top ring body, A polishing member for polishing the adsorbed substrate, A metering gas supply device capable of supplying metering gas to two or more of the plurality of pressure chambers, First switching means for switching whether or not to communicate the metering gas supply device with each of the two or more pressure chambers, A pressure adjustment device capable of individually controlling the pressures of the plurality of pressure chambers, A method for controlling a substrate polishing apparatus including second switching means for switching whether or not to communicate the pressure adjustment device with each of the plurality of pressure chambers, A control method for controlling the metering gas supply device, the first switching means, the pressure adjustment device, and the second switching means so that the metering gas supply device supplies metering gas to the two or more pressure chambers, and then the pressure adjustment device reduces the pressure of the plurality of pressure chambers in order from the outer pressure chamber to detach the substrate adsorbed on the first surface of the elastic membrane.

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